WO2016062477A3 - Verfahren zur strukturierung einer schichtenfolge und halbleiterlaser-vorrichtung - Google Patents
Verfahren zur strukturierung einer schichtenfolge und halbleiterlaser-vorrichtung Download PDFInfo
- Publication number
- WO2016062477A3 WO2016062477A3 PCT/EP2015/071610 EP2015071610W WO2016062477A3 WO 2016062477 A3 WO2016062477 A3 WO 2016062477A3 EP 2015071610 W EP2015071610 W EP 2015071610W WO 2016062477 A3 WO2016062477 A3 WO 2016062477A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layers
- sequence
- laser device
- semiconductor laser
- patterning
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000000059 patterning Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/517,144 US10312664B2 (en) | 2014-10-20 | 2015-09-21 | Method for patterning a sequence of layers and semiconductor laser device |
DE112015004757.3T DE112015004757A5 (de) | 2014-10-20 | 2015-09-21 | Verfahren zur Strukturierung einer Schichtenfolge und Halbleiterlaser-Vorrichtung |
CN201580057080.7A CN107078464B (zh) | 2014-10-20 | 2015-09-21 | 用于对层序列进行结构化的方法和半导体激光器设备 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014115253.0 | 2014-10-20 | ||
DE102014115253.0A DE102014115253A1 (de) | 2014-10-20 | 2014-10-20 | Verfahren zur Strukturierung einer Schichtenfolge und Halbleiterlaser-Vorrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2016062477A2 WO2016062477A2 (de) | 2016-04-28 |
WO2016062477A3 true WO2016062477A3 (de) | 2016-06-16 |
Family
ID=54185949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2015/071610 WO2016062477A2 (de) | 2014-10-20 | 2015-09-21 | Verfahren zur strukturierung einer schichtenfolge und halbleiterlaser-vorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US10312664B2 (de) |
CN (1) | CN107078464B (de) |
DE (2) | DE102014115253A1 (de) |
WO (1) | WO2016062477A2 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111029905A (zh) * | 2019-11-29 | 2020-04-17 | 河南仕佳光子科技股份有限公司 | 一种整片制作边发射光器件的排版结构 |
Citations (3)
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---|---|---|---|---|
US5624529A (en) * | 1995-05-10 | 1997-04-29 | Sandia Corporation | Dry etching method for compound semiconductors |
US5935876A (en) * | 1997-06-10 | 1999-08-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Via structure using a composite dielectric layer |
US20060063348A1 (en) * | 2004-09-23 | 2006-03-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming improved rounded corners in STI features |
Family Cites Families (33)
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JPS6054453A (ja) * | 1983-09-05 | 1985-03-28 | Oki Electric Ind Co Ltd | 半導体集積回路装置の製造方法 |
JP2804502B2 (ja) * | 1989-03-30 | 1998-09-30 | 沖電気工業株式会社 | 半導体レーザ素子及びその製造方法 |
JPH0837338A (ja) * | 1994-07-21 | 1996-02-06 | Nec Corp | 2重チャネル型プレーナ埋込み構造半導体レーザ及び その製造方法 |
US5667630A (en) * | 1995-04-28 | 1997-09-16 | Vanguard International Semiconductor Corporation | Low charge-up reactive ion metal etch process |
JP3587426B2 (ja) * | 1996-09-25 | 2004-11-10 | シャープ株式会社 | 液晶表示装置及びその製造方法 |
DE19640420A1 (de) | 1996-09-30 | 1998-04-02 | Siemens Ag | Verfahren zur Herstellung eines Stegwellenleiters in III-V-Verbindungshalbleiter-Schichtstrukturen und Halbleiterlaservorrichtung |
US5807789A (en) * | 1997-03-20 | 1998-09-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Method for forming a shallow trench with tapered profile and round corners for the application of shallow trench isolation (STI) |
JP2000208871A (ja) * | 1999-01-19 | 2000-07-28 | Oki Electric Ind Co Ltd | 導波路型光素子,導波路型光素子の製造方法,光モジュ―ル,及び光モジュ―ルの製造方法 |
JP2000252062A (ja) * | 1999-03-04 | 2000-09-14 | Pioneer Electronic Corp | 発光ディスプレイパネルの製造方法 |
IES20000820A2 (en) * | 2000-10-11 | 2002-05-29 | Nat Univ Ireland | A single frequency laser |
JP4128365B2 (ja) * | 2002-02-07 | 2008-07-30 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
US7473377B2 (en) * | 2002-06-27 | 2009-01-06 | Tokyo Electron Limited | Plasma processing method |
US6797610B1 (en) * | 2002-12-11 | 2004-09-28 | International Business Machines Corporation | Sublithographic patterning using microtrenching |
JP4028476B2 (ja) * | 2003-11-28 | 2007-12-26 | Tdk株式会社 | 薄膜磁気ヘッドの製造方法 |
US7695897B2 (en) * | 2006-05-08 | 2010-04-13 | International Business Machines Corporation | Structures and methods for low-k or ultra low-k interlayer dielectric pattern transfer |
JP2008042131A (ja) * | 2006-08-10 | 2008-02-21 | Opnext Japan Inc | 半導体光素子およびその製造方法 |
JP2009212386A (ja) * | 2008-03-05 | 2009-09-17 | Mitsubishi Electric Corp | 半導体光素子の製造方法 |
JP5735216B2 (ja) * | 2009-02-27 | 2015-06-17 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
JP2011077339A (ja) * | 2009-09-30 | 2011-04-14 | Sony Corp | 半導体レーザ |
JP2012184144A (ja) * | 2011-03-07 | 2012-09-27 | Tokuyama Corp | 窒化ガリウム結晶積層基板及びその製造方法 |
JP5729138B2 (ja) * | 2011-05-30 | 2015-06-03 | 住友電気工業株式会社 | 光半導体デバイスの製造方法 |
JP2013012680A (ja) * | 2011-06-30 | 2013-01-17 | Renesas Electronics Corp | 半導体発光素子および半導体発光素子の製造方法 |
CN103875059B (zh) | 2011-09-01 | 2016-09-07 | 杭州海存信息技术有限公司 | 三维印录存储器 |
DE102011054954A1 (de) | 2011-10-31 | 2013-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronischer Halbleiterlaser |
US8859322B2 (en) * | 2012-03-19 | 2014-10-14 | Rec Solar Pte. Ltd. | Cell and module processing of semiconductor wafers for back-contacted solar photovoltaic module |
US8986553B2 (en) * | 2012-07-19 | 2015-03-24 | Sumitomo Electric Industries, Ltd. | Method for manufacturing optical semiconductor device |
DE102012107001A1 (de) | 2012-07-31 | 2014-02-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
DE102012107921A1 (de) * | 2012-08-28 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
DE102012112531A1 (de) | 2012-12-18 | 2014-06-18 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiter-Laserelementen und Halbleiter-Laserelement |
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US9299611B2 (en) * | 2014-01-29 | 2016-03-29 | Applied Materials, Inc. | Method of wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance |
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-
2014
- 2014-10-20 DE DE102014115253.0A patent/DE102014115253A1/de not_active Withdrawn
-
2015
- 2015-09-21 US US15/517,144 patent/US10312664B2/en not_active Expired - Fee Related
- 2015-09-21 DE DE112015004757.3T patent/DE112015004757A5/de not_active Withdrawn
- 2015-09-21 WO PCT/EP2015/071610 patent/WO2016062477A2/de active Application Filing
- 2015-09-21 CN CN201580057080.7A patent/CN107078464B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5624529A (en) * | 1995-05-10 | 1997-04-29 | Sandia Corporation | Dry etching method for compound semiconductors |
US5935876A (en) * | 1997-06-10 | 1999-08-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Via structure using a composite dielectric layer |
US20060063348A1 (en) * | 2004-09-23 | 2006-03-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming improved rounded corners in STI features |
Also Published As
Publication number | Publication date |
---|---|
CN107078464B (zh) | 2019-08-13 |
WO2016062477A2 (de) | 2016-04-28 |
DE112015004757A5 (de) | 2017-09-07 |
US20170302058A1 (en) | 2017-10-19 |
CN107078464A (zh) | 2017-08-18 |
DE102014115253A1 (de) | 2016-04-21 |
US10312664B2 (en) | 2019-06-04 |
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