WO2016061493A1 - Monolithic gas distribution manifold and various construction techniques and use cases therefor - Google Patents

Monolithic gas distribution manifold and various construction techniques and use cases therefor Download PDF

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Publication number
WO2016061493A1
WO2016061493A1 PCT/US2015/055997 US2015055997W WO2016061493A1 WO 2016061493 A1 WO2016061493 A1 WO 2016061493A1 US 2015055997 W US2015055997 W US 2015055997W WO 2016061493 A1 WO2016061493 A1 WO 2016061493A1
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WO
WIPO (PCT)
Prior art keywords
gas
substrate
ceramic substrate
channels
gas supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/US2015/055997
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English (en)
French (fr)
Inventor
Andrew C. Lee
Michael C. Kellogg
Christopher J. Pena
John E. Daugherty
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Lam Research Corp
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Lam Research Corp
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Filing date
Publication date
Priority claimed from US14/517,192 external-priority patent/US20160111257A1/en
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to KR1020247003191A priority Critical patent/KR20240017979A/ko
Priority to KR1020177013151A priority patent/KR20170071552A/ko
Priority to SG11201703128UA priority patent/SG11201703128UA/en
Priority to CN201580056443.5A priority patent/CN107075670B/zh
Priority to JP2017520480A priority patent/JP2017534174A/ja
Publication of WO2016061493A1 publication Critical patent/WO2016061493A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/04—Punching, slitting or perforating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • the invention relates to gas delivery systems for semiconductor substrate processing apparatuses. More particularly, the invention relates to a gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus.
  • Semiconductor substrate processing apparatuses are used for processing semiconductor substrates by techniques including, but not limited to, plasma etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), ion implantation, and resist removal.
  • Semiconductor substrate processing apparatuses include gas delivery systems through which process gases are flowed and subsequently delivered into a processing region of a vacuum chamber of the semiconductor processing apparatus by a gas distribution system such as a showerhead, gas injector, gas ring, or the like.
  • the gas delivery system may be configured to supply process gas to a gas injector positioned in the semiconductor processing chamber above a semiconductor substrate so as to distribute process gases over a surface of the semiconductor substrate being processed in the semiconductor processing chamber.
  • Current gas delivery systems are constructed from many individual components, many of which have conduits therein through which process gas flows.
  • gas sticks refers, for example, to a series of gas distribution and control components such as a mass flow controller (MFC), one or more pressure transducers and/or regulators, a heater, one or more filters or purifiers, and shutoff valves.
  • MFC mass flow controller
  • the components used in a given gas stick and their particular arrangement may vary depending upon their design and application.
  • over seventeen gas sticks may be connected to the semiconductor processing chamber via gas supply lines, gas distribution components, and mixing manifolds. These are attached to a base plate forming a complete system known as a "gas panel” or “gas box” which serves as a mounting surface for the gas sticks and which does not play a role in the gas distribution.
  • a gas stick includes multiple integrated surface mount
  • each component of the gas stick is typically positioned above a manifold block in a linear arrangement.
  • a plurality of manifold blocks form a modular substrate, a layer of manifold blocks that creates the flow path of gases through the gas stick.
  • the modular aspect of conventional gas sticks allow for reconfiguration, much like children's LEGO ® block toys.
  • each component of a gas stick typically includes highly machined parts, making each component relatively expensive to manufacture and replace.
  • Each gas flow component is typically constructed with a mounting block, which in turn is made with multiple machine operations, making the component expensive.
  • the substrate may include a plurality of layers having major surfaces thereof bonded together to form a laminate.
  • the laminate may include openings configured to receive and mount at least a first gas supply component, a second gas supply component, a third gas supply component, and a fourth gas supply component on an outer major surface of at least one of the layers.
  • the substrate may also include a first gas channel extending at least partially across an interior major surface of one of the layers and a second gas channel extending at least partially across a different interior major surface of one of the layers.
  • the first gas channel may at least partially overlap the second gas channel when viewed from a direction perpendicular to the major surfaces of the layers.
  • the substrate may include a first gas conduit that may include the first gas channel and which may be configured to connect the first gas supply component to the second gas supply component, and a second gas conduit including the second channel configured to connect the third gas supply component to the forth gas supply component.
  • a system for a semiconductor manufacturing system gas box that includes the gas delivery substrate.
  • the system includes gas supply components mounted on at least one major surface of the gas delivery substrate.
  • the gas supply components may be mounted on opposing major surfaces of the gas delivery substrate.
  • the system may include an on/off gas valve connected to an MFC through a gas conduit within the substrate, another on/off gas valve connected to a mixing manifold or chamber through a gas conduit within the substrate, and a mixing manifold or mixing chamber exit connected to one or more openings of the gas delivery substrate.
  • Disclosed herein is also a method of producing a gas delivery substrate.
  • the method may include creating a first gas channel extending at least partially across an interior major surface of at least one layer of a plurality of layers having major surfaces thereof, creating a second gas channel extending at least partially across a different interior major surface, and creating openings on an outer major surface. At least some of the openings may be mounting holes configured to receive and mount at least a first gas supply component, a second gas supply component, a third gas supply component, and a fourth gas supply component.
  • the method may further include bonding the layers together to form a laminate such that the first gas channel is at least partially overlapping the second gas channel, the first gas channel forms part of a first gas conduit connecting the first gas supply component to the second gas supply component, and the second gas channel forms part of a second gas conduit connecting the third gas supply component to the fourth gas supply component.
  • the method may include delivering a first gas from the first gas supply component to the second gas supply component through the first gas channel, and delivering the first gas from the second gas supply component to a mixing chamber within the substrate through a third gas channel in the substrate.
  • the method may further include delivering a second gas from the third gas supply component to the fourth gas supply component through the second gas channel, and delivering the second gas from the fourth gas supply component to the mixing manifold or chamber within the substrate through a fourth gas channel in the substrate.
  • the method may also include mixing the first gas and the second gas in the mixing chamber to create a first gas mixture and delivering the first gas mixture through one or more gas channels in the substrate and/or one or more outlets on the substrate to a semiconductor processing chamber downstream.
  • a method may be provided that includes obtaining a ceramic substrate having a first side and second side opposite the first side.
  • the ceramic substrate may include a surface-mount valve interface that is located on the first side; the surface-mount valve interface may include two or more holes in the ceramic substrate.
  • the method may further comprise lapping or polishing at least one surface of the ceramic substrate surrounding the two or more holes such that the surface roughness of the at least one surface is less than or equal to 5 ⁇ Ra.
  • the method may further include positioning a crushable metal seal around at least one of the two or more holes, positioning a surface-mount gas flow component such that the at least one of the two or more holes aligns with a gas flow port on the surface-mount gas flow component and the crushable metal seal, and clamping the surface-mount gas flow component to the ceramic substrate using one or more fasteners, thereby compressing the crushable metal seal against the surface or surfaces having the surface roughness that is less than or equal to 5 ⁇ Ra.
  • the crushable metal seal may be a C-seal, a W-seal, or a metal o-ring.
  • the at least one of the two or more holes is counterbored such that the crushable metal seal is at least partially recessed within the counterbore of the hole when installed, and the at least one surface that is lapped or polished includes the floor of the counterbore.
  • the at least one surface may include the entire first side.
  • an apparatus may be provided that includes a ceramic substrate.
  • the ceramic substrate may have a first side and second side opposite the first side, and may include a surface-mount valve interface that is located on the first side.
  • the surface-mount valve interface may include two or more holes in the ceramic substrate, and the surface or surfaces surrounding the holes may have a surface roughness less than or equal to 5 ⁇ Ra.
  • the apparatus may further include a crushable metal seal and a surface-mount gas flow component with one or more gas flow ports.
  • the surface-mount gas flow component may be mounted to the ceramic substrate such that each gas flow port aligns with one of the holes, the crushable metal seal is interposed between the surface-mount gas flow component and the ceramic substrate, and the crushable metal seal is in contact with one of the surfaces having the surface roughness less than or equal to 5 ⁇ Ra.
  • the crushable metal seal may be a C-seal, a W-seal, or a metal o-ring.
  • the ceramic substrate may further include at least one counterbore feature, and the at least one counterbore feature may correspond in location to one of the two or more holes and have a floor that intersects with the hole.
  • the at least one surface that is lapped or polished to a surface roughness of less than or equal to 5 ⁇ Ra may include the floor.
  • the at least one surface may include the entire first side.
  • a method may include manufacturing a ceramic substrate having a first side and second side opposite the first side and including a plurality of surface-mount valve interfaces located on one or both of the first side and the second side, one or more channels located between the first side and the second side, and a plurality of drop-holes fluidically connecting the one or more channels with the surface-mount valve interfaces.
  • the method may further include forming a coating on at least surfaces of the channels within the ceramic substrate.
  • the manufacturing the ceramic substrate may include manufacturing a plurality of ceramic layers, laser-cutting the one or more channels into one or more of the layers, bonding the plurality of ceramic layers together, and sintering the bonded layers to form the ceramic substrate.
  • the coating may have a thickness greater than or equal to the smallest nominal particle size of ceramic particles used to make the ceramic substrate or the maximum surface roughness exhibited by the surfaces of the one or more channels.
  • the method may further include applying a glaze to surfaces of the channels, firing the ceramic substrate in a kiln or oven to melt the glaze, and cooling the ceramic substrate to solidify the molten glaze and form the coating.
  • the method may further include inserting the ceramic substrate into a chemical vapor deposition (CVD) chamber and performing one or more CVD operations on the ceramic substrate to form the coating.
  • CVD chemical vapor deposition
  • the method may include masking, prior to performing the one or more CVD operations, portions of the first side or the second side to prevent the coating from being deposited on the masked portions.
  • the method may further include inserting the ceramic substrate into an atomic layer deposition (ALD) chamber and performing a plurality of ALD operations on the ceramic substrate to form the coating.
  • ALD atomic layer deposition
  • an apparatus may be provided.
  • the apparatus may include a ceramic substrate having a first side and second side opposite the first side, a plurality of surface-mount valve interfaces located on one or both of the first side and the second side, one or more channels located between the first side and the second side, a plurality of drop-holes fluidically connecting the one or more channels with the surface-mount valve interfaces, and a coating on at least surfaces of the one or more channels within the ceramic substrate.
  • the ceramic substrate may include a plurality of ceramic layers that are sintered together, and the one or more channels may have sidewalls that are laser-cut into one or more of the layers.
  • the coating may have a thickness greater than or equal to the smallest nominal particle size of ceramic particles used to make the ceramic substrate or the maximum surface roughness exhibited by the surfaces of the one or more channels sidewalls.
  • the coating may be a silica- containing glaze.
  • the coating may be a chemical vapor deposition (CVD) coating.
  • the CVD coating may be a polymeric coating.
  • the coating may be a conformal atomic layer deposition (ALD) coating.
  • ALD conformal atomic layer deposition
  • Figure 1 illustrates an example implementation of a semiconductor substrate processing apparatus in accordance with implementations disclosed herein.
  • Figure 2 is a schematic of an example gas delivery system in accordance with implementations disclosed herein.
  • Figure 3 illustrates an example of a gas stick.
  • Figures 4-6 illustrate various views of a modular gas stick.
  • FIGS 7 through 9 illustrate example implementations of single layers in a gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus, in accordance with implementations disclosed herein.
  • Figures 10 and 11 illustrate multiple example layers of an example gas delivery substrate for mounting gas supply components before being bonded together, in accordance with implementations disclosed herein.
  • Figure 12 illustrates multiple layers of an example gas delivery substrate for mounting gas supply components of a gas delivery system after being stacked together, in accordance with implementations disclosed herein.
  • Figure 13 illustrates multiple layers of the example gas delivery substrate of
  • Figure 14 depicts a three-dimensional rendering of the fluid flow conduits, e.g., channels and vertical through-holes, located within the example gas delivery substrate of Figures 10-13.
  • Figure 15 depicts a plan view of the example gas delivery substrate of Figure 12.
  • Figure 16 depicts an isometric view of an example gas delivery system utilizing an example layered substrate.
  • Figure 17 depicts an isometric exploded view of the example gas delivery system of Figure 16.
  • Figure 18 depicts an exploded section view of a typical C-seal interface between a gas supply component and a metal base.
  • Figure 19 depicts a section view of the assembled C-seal interface of Figure 18.
  • Figure 20 depicts a flow diagram for a technique for preparing a ceramic substrate for interfacing with a gas flow component using a standard crushable metal seal, such as a metal C-seal.
  • Figure 21 depicts a cross-section of an arrangement in which the entire surface of a ceramic substrate may be polished or lapped to a surface roughness of less than or equal to 5 ⁇ R a .
  • Figure 22 depicts a flow diagram for a technique for preparing a ceramic substrate for a semiconductor tool gas distribution system so as to have a reduced likelihood of particulate contamination.
  • Figures 23 through 25 depict simplified cross-sectional views of a ceramic substrate and masking components during various stages of a CVD coating application.
  • a gas delivery substrate for mounting gas supply components, also referred to herein as gas flow components, of a gas delivery system for a semiconductor processing apparatus and methods for producing and using the same.
  • the semiconductor substrate processing apparatus may be used for processing semiconductor substrates by techniques including, but not limited to, plasma etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), ion implantation, or resist removal.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • ALD atomic layer deposition
  • PEALD plasma enhanced atomic layer deposition
  • ion implantation or resist removal.
  • Gas distribution systems of semiconductor substrate processing apparatuses may utilize gas sticks, each of which may be a series of gas distribution and control components such as, for example, a mass flow controller (MFC), one or more pressure transducers and/or regulators, one or more heaters, one or more filters or purifiers, manifolds, gas flow adaptors, and/or shutoff valves.
  • MFC mass flow controller
  • the components used and their particular arrangement in a gas stick may vary depending upon their design and application.
  • the number of gas sticks used in a particular gas distribution system may vary depending on the needs of the semiconductor process performed. For example, in some semiconductor substrate processing arrangements, over seventeen process gases, each supplied by a different gas stick, may be supplied to the chamber.
  • Such gas distribution system components are typically attached to a base plate, typically called a "gas pallet,” to form the system which is commonly known as a "gas panel" or "gas box.”
  • gas delivery system components are traditionally made from metals such as stainless steel or other metal alloys and then assembled together, requiring interfaces and seals between the constituent components, in order to achieve desired conduit paths for process gases.
  • the constituent components typically include precision-machined parts, making each component relatively expensive to manufacture, maintain, and replace.
  • Each component is typically attached to a mounting block or base, which, in turn, is also precision- machined, making the component expensive.
  • Corrosion, erosion, and/or corrosion/erosion in environments may contain oxygen, halogens, carbonyls, reducing agents, etching gases, depositing gases, hydro-fluorocarbon process gas, and/or process gases which may be used in semiconductor substrate processing such as but not limited Cl 2 , HCI, BCI 3 , Br 2 , HBr, 0 2 , S0 2 , CF 4 , CH 2 F 2 , NF 3 , CH 3 F, CHF 3 , SF 6 , CO, COS, SiH 4 , and H 2 .
  • inert gases such as but not limited Ar and N 2 , may be supplied to said environments.
  • a gas delivery substrate for mounting gas supply components for multiple gas feeds of a gas delivery system for a
  • the substrate may be formed from laminated layers which are bonded together to create a uniform monolithic structure having gas-tight channels that may be in fluidic communication with each other.
  • These layers may be made from a variety of materials, including, for example, stainless steels, glass, or ceramics.
  • the layers may be brazed together or otherwise bonded together.
  • the layers may be bonded together before sintering and then sintered into a fused layer stack; the bonding material is typically burned off during the sintering process, resulting in a generally homogenous ceramic part.
  • the substrate may be configured to receive and mount gas supply
  • the layered structure of the substrate may allow channels or connections to be created of any size and in any direction in the X/Y planes of multiple layers, each of which may be connected to other channels or ports in other layers by connections in the Z direction within the substrate.
  • the X and Y directions are defined as being parallel to the major surfaces of each layer, and the Z direction is defined as being
  • linear fluid routing refers to fluid routing in which the fluid flow
  • non-linear fluid routing refers to fluid routing in which the fluid flow components in a fluid flow path are not all arranged in a line and in which at least one fluidic connection between such fluid flow components follows a path having at least one non-orthogonal angle in it.
  • nonlinear fluid routing may be used in which at least a portion of the fluidic connection between such fluid flow components follows a curvilinear path, i.e., at least a portion of the path is not a line, but a curve, arc, or spline; such further examples of non- linear fluid routing may be referred to as "curvilinear fluid routing.”
  • curvilinear fluid routing Existing gas box designs typically feature collections of fluid flow components that are arranged to provide fluid flow networks having linear fluid routing, e.g., 16 gas sticks having linear fluid routing may be arranged to join with line of T-junctions that have a linear fluid routing direction that is at 90° to the linear fluid routing directions of the gas sticks— at the gas stick level, the flow paths are all linear in nature.
  • non-linear fluid routing may be used, which allows for nonlinear fluid flow component layouts.
  • the layered substrate approach allows for channels to cross over one another, it is possible to locate fluid flow components from a particular gas flow path on either side of another gas flow path, which provides further flexibility in mounting locations.
  • gas supply components of a gas delivery system may be housed closer together and various critical connections between components may be made shorter, which reduces the overall size of the gas delivery system (or allows for a gas delivery system with increased capacity to be housed in the same form factor as a smaller capacity traditionally-designed gas box) and reduces gas flow transit time between gas supply components.
  • gas supply components and their connections are often made from high quality materials, such as expensive metal alloys, e.g., Hastelloy ® , glass or ceramics— this dramatically increases the costs of certain components, e.g., modular substrate components— use of a layered substrate, as disclosed herein, may allow for a large number of expensive parts, such as the modular substrate pieces, tubing, fittings, etc., to be replaced by one, larger part. This larger part, while more expensive than any of the piece parts that it may replace, may nonetheless offer significant savings over all of the piece parts that it may replace. Moreover, by using a layered substrate, the assembly time needed to assemble the various piece parts that the layered substrate may replace may be eliminated, resulting in further savings. Use of a layered substrate also allows all of the seals between various piece parts, e.g., between modular substrate pieces, to be eliminated, which reduces the amount of leak testing that must be done, thereby further reducing the costs of such systems.
  • high quality materials such as expensive metal alloys, e.
  • a ceramic substrate is used, all of the metallic surfaces which typically contact process gases, i.e., become chemically wetted, within a typical modular substrate may be eliminated or reduced so as to comply with on wafer, i.e., substrate, purity requirements.
  • the compact design of the layered substrate (as compared with the traditional gas-stick approach) allows for reduced material costs, a reduction of the number of possible contamination and failure points, and faster gas delivery pulsing and switching times for a gas delivery system by virtue of allowing for shorter gas flow paths between certain critical flow components.
  • Figure 1 illustrates an implementation of a semiconductor substrate processing apparatus 104, e.g., an inductively coupled plasma processing apparatus, which may include a gas delivery system 102 including a gas delivery substrate for mounting gas supply components, as disclosed herein.
  • the inductively coupled plasma processing apparatus may include a vacuum chamber 104, e.g., a plasma etch chamber.
  • the vacuum chamber 104 may include a substrate support (lower electrode assembly) 106 for supporting a semiconductor substrate 108 in the interior of the vacuum chamber 104.
  • a dielectric window 110 may form a top wall of the vacuum chamber 104.
  • Process gases may be injected into the interior of the vacuum chamber 104 through a gas injector 112.
  • the gas delivery system 102 may supply process gases to the interior of the vacuum chamber 104 through the gas injector 112. Parameters, e.g., temperature, flow rate, and chemical makeup, of the process gases supplied to the interior of the vacuum chamber by the gas delivery system may be controlled by a control system 114.
  • the process gases may be energized into a plasma state by an antenna 116 supplying RF energy into the interior of vacuum chamber 104.
  • the antenna 116 may be a planar antenna powered by an RF power source 122 and RF impedance matching circuitry 118 to inductively couple RF energy into the vacuum chamber 104.
  • the antenna 116 may be an external or embedded antenna which is nonplanar.
  • An electromagnetic field generated by the application of RF power to the antenna may energize the process gas in the interior of the vacuum chamber 104 to form high-density plasma, e.g., 109-1012 ions/cm3, above the substrate 108.
  • the antenna 116 i.e., an RF coil
  • the antenna 116 may perform a function analogous to that of a primary coil in a transformer, while the plasma generated in the vacuum chamber 104 performs a function analogous to that of a secondary coil in the transformer.
  • the antenna 116 may be electrically connected to the RF impedance matching circuitry 118 by an electrical connector or lead 120 and the RF power source 122 may be electrically connected to the RF impedance matching circuitry 118 by an electrical connector 124.
  • FIG. 2 is a schematic view of an example gas delivery system 200 for a semiconductor substrate processing apparatus processing including a gas delivery substrate for mounting gas supply components, as disclosed herein.
  • a vacuum chamber 210 of a semiconductor substrate processing apparatus may be supplied process gas through a gas supply line 214.
  • the gas supply line 214 may provide process gases, such as etching and/or deposition gases, which may be alternatively supplied or pulsed, to a gas distribution member such as a showerhead or a gas injector arranged in the upper portion of the vacuum chamber 210, and downstream of the gas delivery system 200.
  • the gas supply line 214 may supply process gas to a lower portion of the vacuum chamber such as, for example, to a gas distribution ring surrounding the semiconductor substrate support or through gas outlets arranged in the substrate support (not shown). Processing gas may be supplied to gas line 214 from gas supplies 216, 218, 220, 230 with the process gases from supplies 216, 218, 220, 230 being supplied to MFCs 222, 224, 226, 232 respectively.
  • the MFCs 222, 224, 226, 232 supply the process gases to a mixing manifold 228 after which the mixed gas is directed to gas flow line 214.
  • Mixing manifold 228 may be within the substrate for mounting gas supply components or external to the substrate.
  • the gas delivery system 200 includes a layered substrate for mounting gas supply components, as disclosed herein.
  • Figure 3 illustrates a cross section of a prior art gas stick with a modular substrate 322 and the flow of gases through such a gas stick.
  • the gas may flow through a primary shut-off valve 314, out of a purge valve 316, and into an MFC 318 in the direction of flow path A.
  • the gas may then flow out of the MFC 318 via an exit port 300 and into the modular substrate 322, through the mixing valve 320, out of an outlet 326, and into a mixing manifold or chamber (not shown), as illustrated by flow path D.
  • Substrate 322 is of a modular design which includes multiple interchangeable parts which are connected to each other with seals, which each introduce potential failure points in the gas stick assembly. Since substrate 322 is made up of multiple parts, it allows for a LEGO ® type construction, which provides flexibility in how each gas stick is assembled. However, this design causes the flow path between gas supply components to become long, which increases fluid flow path lengths and thus transit time of gases, and introduces multiple failure points in the gas stick, as discussed above.
  • the gas box includes discrete gas sticks, built up on discrete substrates such as the modular substrate 322, that are then mounted to a common mounting plate— the fluid flow passages in such conventional gas boxes are provided by the discrete substrates and are not included in the mounting plate.
  • Figures 4 through 6 show another example of a modular substrate gas stick.
  • the individual piece-parts of the modular substrate are clearly shown in the exploded view.
  • Each such modular piece-part 325 may interlock with the adjacent modular piece-part 325 and the two interlocked piece-parts 325 may then be bolted together.
  • the gas flow components 323, which, in this example, are all valves of various types, may be assembled to the assembled substrate.
  • Seals 327 may be interposed between the gas flow components 323 and the piece-parts 325 in order to provide a gas-tight seal interface.
  • a gas delivery substrate for mounting gas supply components of a gas delivery system may be formed from stacked layers which are bonded together to create a uniform monolithic structure that is configured to receive and mount gas supply components such that the gas supply components are in fluidic communication with each other via channels within the substrate.
  • the layered structure of the substrate may allow gas channels or conduits to be created of any size and in any of several directions.
  • the layered substrate may also include channels or conduits for running electrical wire connections between gas supply components or may include electrical conductors that are embedded within the substrate for a similar purpose.
  • the layered substrate may also include heater elements that are housed in one or more channels routed in a layer of the substrate, e.g., a layer of the layered substrate may have one or more meandering channels that each house a resistive heater element.
  • the substrate may include channels or conduits for carrying pressurized air between gas supply components.
  • the channels or conduits within the substrate may provide pneumatic supply connections between a pneumatic manifold and diaphragm valves, e.g., on/off valves.
  • the diaphragm valves may include a solenoid which is actuated by pressurized air in order to control the flow of gas.
  • gas supply components may be housed closer together on the substrate and the connections between components may be made shorter than the connections within substrate 322, as shown in Figure 3.
  • Figures 7-9 illustrate layers from an example of a layered gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus, as disclosed herein.
  • Figures 7-9 each show an example of a single layer which may be included in such a substrate; these layers may be stacked together (including with additional layers not pictured here) and then bonded together.
  • the layers of the substrate may be made from any suitable material, such as ceramic, metal, metal alloy, glass, or composites.
  • One or more layers of the substrate may also include one or more chambers or plenums, e.g., a mixing chamber.
  • the substrate may include one or more chambers or plenums which extend through two or more layers of the substrate to form part of a mixing chamber.
  • the substrate may have one or more flow restrictors, e.g., a filter or frit with one or more small openings, embedded within one or more of the layers, e.g., such as within a channel of a layer or housed within a through-hole of a layer.
  • a flow splitter e.g., a T- junction, +-junction, or other multi-path junction, may be created within one or more layers of the substrate for diverting gas.
  • a layer 700 may include multiple vertical through- holes 710 and horizontal channels or passages 720.
  • Vertical through-holes 710 may be configured as gas conduits to provide fluidic communication between channels in different layers, between ports on opposing outer surfaces of the substrate, or between a port on an outer surface of the substrate and a channel or channels in one or more of the layers (vertical through-holes that connect an internal passage or channel of the substrate to an exterior surface of the substrate may also be referred to herein as "drop-holes").
  • Mounting holes 708 may provide through-holes through which threaded fasteners, e.g., screws or bolts, may be inserted in order to fasten or attach gas supply components to the substrate.
  • the mounting holes 708 may also be blind holes with internal threads or threaded inserts.
  • the vertical through-holes 710 used for gas conduits may be coated with one or more additional materials, such as metal, glass, plastic, ceramic, metal alloys, or composites.
  • the vertical through-holes 710 are the smaller-diameter holes
  • the mounting holes 708 are the larger-diameter holes, as shown in the "Hole Size Guide" included with Figures 7-9.
  • vertical through-holes 710 may take any of a variety of shapes or follow any of a variety of directions, i.e., they are not necessarily constrained to be vertical (perpendicular to the substrate), but may also be slanted or have other geometries.
  • the vertical through-holes 710 of multiple layers may be configured so as to line up and create a gas-tight connection that spans multiple layers when the layers are bonded together.
  • some vertical through-holes 710 in a given layer may connect with a channels on the opposite side of the layer, or may connect two channels on opposing sides of the layer.
  • the vertical through-holes 710 also may be non-cylindrical, e.g., they may be tapered, or may change size from one layer to another, e.g., for a series of three vertical through-holes 710 that align with one another in a layer stack, the middle vertical through-hole 710 may have a larger diameter, allowing a frit or other flow restriction device or filter device of that larger diameter to be inserted into the middle vertical through-hole 710, where it may be trapped in place by the smaller- diameter vertical through-holes 710 in the adjacent layers.
  • the middle vertical through-hole 710 may have a larger diameter, allowing a frit or other flow restriction device or filter device of that larger diameter to be inserted into the middle vertical through-hole 710, where it may be trapped in place by the smaller- diameter vertical through-holes 710 in the adjacent layers.
  • vertical through-holes 710 may extend vertically or at an angle in any direction within the three dimensional space of a layer (e.g., X-direction, Y- direction, and Z-direction).
  • a layer of the gas delivery substrate may include horizontal channels 720, i.e., channels that traverse the layers in directions parallel to the plane of the major surface(s) of the layer.
  • Horizontal channels 720 may be linear, follow curvilinear paths, or split into or join with multiple other horizontal channels.
  • Horizontal channels 720 may extend partially into or completely through a layer.
  • horizontal channels 720 may vary in cross-section as they traverse a layer.
  • the horizontal channels 720 may have a depth that is deeper at one end and shallower at another end, potentially resulting in a decreasing or increasing cross-sectional area perpendicular to the direction of flow within such a channel.
  • the slope of a channel may also be varied (e.g., zigzag, curving or undulating).
  • horizontal channels 720 may be configured to create a gas- tight connection with vertical through-holes 710 and/or horizontal channels 720 of another layer when the layers are bonded together to form a gas conduit.
  • vertical through-holes 710 may connect to horizontal channels 720 within the same layer, e.g., on opposite sides of the same layer, to form a gas conduit.
  • Horizontal channels 720 may be set parallel to a plane of the layer or at any angle with respect to the plane of the layer. Interior surfaces of horizontal channels 720 and vertical through-holes 710 may be coated with corrosion resistant material, such as siloxane, see U.S. Patent Application Publication No. 2011/0259519, the disclosure of which is hereby incorporated by reference in its entirety, which discusses such treatments.
  • horizontal channels may partially or fully overlap, when viewed from a direction normal to the major surfaces of the layers, other horizontal channels in other layers or on an opposite side of the layer having such horizontal channels.
  • some horizontal channels may cross over other horizontal channels and/or some vertical channels. In this way, connections between gas supply components may be more efficiently routed, in order to save space and reduce the overall footprint of the substrate.
  • the horizontal channels 720 may follow any path, e.g., straight, rectilinear, , meandering, winding, curved, or curvilinear, within a layer.
  • horizontal channels 720 may extend radially from a common point and then follow a curved path, e.g., to form a radial array of J-shaped paths.
  • One or more of the layers may also include a larger volume that may serve as a mixing chamber or manifold.
  • the center "hub" from which the eight spoke channels 720 radiate in the layer shown in Figure 9, which is indicated with a dotted circle and the reference 712, may serve as a mixing chamber or manifold.
  • Figures 10 and 11 show an example of a gas delivery substrate for mounting gas supply components of a gas delivery system including multiple layers prior to those layers being bonded together.
  • Figures 10 and 11 show different layers 700A- 700F of a substrate 700;
  • Figure 10 shows an isometric exploded view from one side, and
  • Figure 11 shows an isometric exploded view from the other side.
  • the channels 720 are, in this example, all located on the surfaces of the layers facing in the same direction, although in other implementations, some of the channels 720 may be located on surfaces of the layers facing in opposite directions from other surfaces of the layers having channels 720.
  • each vertical through-hole 710 and channel 720 in each layer may line up with a corresponding vertical through- hole 710 in at least one adjacent layer.
  • the substrate 700 may include as many layers as are needed in order to achieve the desired routing paths for gas flow streams.
  • the substrate 700 in this example includes six layers 700A- 700F, including outer layers 700A and 700F, and inner layers 700B-700E.
  • Each layer of the substrate may have vertical through-holes and/or horizontal channels.
  • each layer may include one or more chambers or plenums, e.g., such as a mixing chamber 712, which may extend partially through a layer or completely through one or more layers.
  • the layers may be bonded together through firing, sintering, adhesive, friction welding, pressure (such as through hot isostatic pressing), welding, soldering, cold spraying, and heat treatment, ultrasonic welding, cooling, brazing, or diffusion bonding.
  • the substrate may have improved corrosion resistance and gas purity while also reducing cost by avoiding expensive metal alloys, e.g., Hastelloy ® , or stainless steel, e.g., 316.
  • the layers may be clamped together through any mechanical means, such as clamps, bolts, screws, rivets, or through-bolts.
  • Figures 12 and 13 illustrate the gas delivery substrate layers of Figures 10 and 11 bonded together to form a monolithic substrate structure 700.
  • the layers of the substrate 700 may be made of the same material such that, when bonded together, they form a uniform, monolithic structure (although if a material is used to facilitate the bonding, e.g., an adhesive or braze material, such material may differ from the layer material).
  • Each layer of the substrate may have a uniform thickness or a nonuniform thickness.
  • different materials may be used for each layer.
  • the outer layers may be formed from a higher quality material than the inner layers and vice versa.
  • the layers may have identical overall shapes or different overall shapes or configurations. For example, two smaller-area layers may both be bonded to the same side of a common, larger layer.
  • one layer may have a rectangular shape while another layer may have a circular shape.
  • the substrate may be formed such that it is configured to receive and mount gas supply components on the exposed out major surfaces of the topmost and/or bottommost layer of the substrate.
  • the substrate may be formed with three sides or more sides (e.g., a triangular shape, a rectangle, pentagon, hexagon, etc.), such that the one or more sides of the substrate are configured to receive and mount gas supply components.
  • the layered substrate may be formed in a circular, oval or curvy shape (e.g., a single vertical side).
  • the substrate may be formed with a mixture of flat angular sides and curved sides (e.g., a "D" shape).
  • the substrate may be formed such that it is configured with one or more gas inlets and one or more gas outlets.
  • the gas inlets and outlets may be included in any layer or across more than one layer of the substrate.
  • the gas outlets may be configured to connect to one or more gas lines and/or a processing chamber downstream.
  • Figure 14 depicts a three-dimensional rendering of the fluid flow conduits, e.g., channels and vertical through-holes, located within the substrate 700 of Figures 10-13. Figure 14 does not show the substrate itself, nor show the mounting holes.
  • Figure 14 may be thought of as a depiction of the structure that would occur if a molten material were to be flowed through all of the flow conduits within the substrate and allowed to cool and harden into a solid, and the substrate then subsequently removed without damaging the cooled, solid material.
  • the conduits are able to follow complicated paths that overlap one another, crisscross or cross over one another, etc.
  • certain portions of these conduits may be identical for each individual gas flow path.
  • each of the eight, straight radial spoke channels that radiate outward from the mixing chamber near the center of the conduit network is the same length, and connects up with vertical through-holes that may connect up with a different pair on/off valves of sixteen on/off valves mounted on opposing sides of the substrate.
  • These on/off valves may, in turn, each be connected, via another vertical through-hole, with one of the sixteen identical J-shaped channels that are arranged in a radial array around the mixing chamber.
  • Each J-shaped channel may, in turn, be connected, via another vertical through-hole, with a different one of sixteen mass flow controllers that are mounted on opposing sides of the substrate.
  • the J-shaped channels and straight radial spoke channels, and the vertical through-holes connecting them with the valves and mass flow controllers may all be identical (or mirror images of one another) such that transit time and delivery delay of the gas that is metered out from the mass flow controllers is not dependent on the mounting locations of the mass flow controllers or the valves.
  • the channels and vertical through-holes may differ in length and configuration/shape from flow path to flow path. Since these differences, if they exist, are upstream of the mass flow controllers, however, such differences would not cause differences in transit time or delivery delay of the gases into the mixing chamber.
  • a plurality of vertical through-holes may serve as gas inlets 1420; each gas inlet 1420 may have a manual shut-off valve connected to a process gas interfaced to it and may be fluidically connected to an upstream gas supply channel 1440, which, in turn, may be fluidically connected with another vertical through hole located at the opposite end of the channel 1440; this vertical through-hole may be connected to a mass flow controller, the exit of which may be fluidically connected with vertical through-holes 1460, which may be in fluidic communication with, as shown in the depicted example, the J-shaped passages.
  • Each J-shaped passage may fluidically connect one of the vertical through-holes 1460 with another vertical through-hole that may be interfaced with a shut-off valve, which may then connect with one of the radial channels 1450 leading to a mixing chamber 1430; the mixing chamber 1430 may be fluidically connected by another channel to an outlet 1470.
  • one or more layers of the substrate may include a gas flow splitter (see, for example, splitter 701 in Figure 11), a heater, a restrictor (e.g., a filter with one or more small holes), and/or a gas mixing manifold.
  • the layers of the substrate may include air conduits.
  • the air conduits may allow a pneumatic manifold to connect to and control diaphragm valves or air actuators mounted on the substrate.
  • Figure 15 depicts a plan view of the example gas delivery substrate of Figure 12.
  • the channels, shown in dashed lines, in the gas delivery substrate may pass over or under one another, follow common paths at different elevations at times, and otherwise achieve flow geometries that are difficult or impossible to achieve using conventional gas stick implementations.
  • Figures 16 and 17 depict isometric views of an implementation of a gas delivery substrate as described herein with associated gas supply components of a gas delivery system for a semiconductor processing apparatus.
  • Figure 16 is an isometric view of a gas delivery substrate 1602 that forms a gas delivery system 1600
  • Figure 17 is an isometric exploded view of the substrate 1602.
  • the substrate may be configured to receive and mount a variety of different gas supply components; a seal 1654 may be sandwiched between each gas supply component and the ceramic substrate 1602 in order to provide a leak-tight seal.
  • the locations of many of the gas supply components, e.g., valves 1610 and MFCs 1608, on both sides of the substrate match up so that a single set of fasteners 1646 (bolts) and 1650 (nuts) may be used to mount two opposing gas supply components to the substrate— this may be more clearly evident in the exploded view of Figure 17.
  • gas delivery substrate 1602 may receive process gases via a plurality of gas inlets 1612.
  • the gas supply components may be organized in different sections on any side of the substrate.
  • the substrate may be configured with one or more gas outlets or openings for allowing gas to exit the substrate. The outlets may be included on any side of the substrate.
  • the gas outlets may be configured to connect to one or more gas lines and/or a processing chamber downstream.
  • the gas delivery substrate may be configured to receive and mount gas supply components such that different components may be shared between different gas lines. This design may save space and reduce costs while also reducing gas pulsing and switching times.
  • Figures 16 and 17 illustrate an example of a substrate that is configured to receive and mount some gas supply components in a radial or circular array arrangement on the substrate. In other words, some of the gas supply components may be arranged in a ring formation around a common point, such as a mixing chamber within the substrate.
  • the substrate may include a multi-inlet mixing chamber, similar to the mixing chamber 712, where the gas inlets from the MFCs and/or the on/off valves interposed between the MFCs and the mixing chamber are spaced equally from the center mixing chamber.
  • a mixing manifold within the substrate may include a cylindrical or spherical mixing chamber defined by features within one or more layers of the substrate, and the gas inlets may be located at circumferentially spaced locations on any side of the substrate.
  • the mixing chamber volume may be considerably smaller when compared to a mixing chamber that is fluidically connected with a large number, e.g., 16, gas sticks laid out side-by-side one another, as is traditionally done in gas boxes.
  • a radial arrangement allows for both high flow and low flow gases to be mixed effectively instantly, and for co-flow effects, i.e., gas mixing delays due to gas position or location, to be virtually or completely eliminated.
  • a manual valve may be mounted on the gas delivery substrate for carrying out the supply or isolation of a particular gas supply.
  • the manual valve may also have a lockout/tagout device above it.
  • Worker safety regulations often mandate that plasma processing manufacturing equipment include accidental activation prevention capability, such as a lockout/tagout mechanism.
  • a lockout generally refers, for example, to a device that uses positive means such as a lock, either key or combination type, to hold an energy-isolating device in a safe position.
  • a tagout device generally refers, for example, to any prominent warning device, such as a tag and a means of attachment that may be securely fastened to an energy-isolating device in accordance with an established procedure.
  • a regulator may be mounted on the gas delivery substrate to regulate the gas pressure of the gas supply and a pressure gas may be used to monitor the pressure of the gas supply.
  • the pressure may be preset and need not be regulated.
  • a pressure transducer having a display to display the pressure may be used.
  • the pressure transducer may be positioned next to the regulator.
  • a filter may be used to remove impurities in the supply gas.
  • a primary shut-off valve may be used to prevent any corrosive supply gases from remaining in the substrate.
  • the primary shut-off valve may be, for example, a two- port valve having an automatic pneumatically operated valve assembly that causes the valve to become deactivated (closed), which in turn effectively stops gas flow within the substrate.
  • a non-corrosive purge gas such as nitrogen
  • the purge gas component and the substrate may have, for example, three ports to provide for the purge process (i.e., an entrance port, an exit port, and a discharge port).
  • a mass flow controller may be located adjacent the purge valve.
  • the MFC accurately measures the flow rate of the supply gas. Positioning the purge valve next to the MFC allows a user to purge any corrosive supply gases in the MFC.
  • a mixing valve next to the MFC may be used to control the amount of supply gas to be mixed with other supply cases on the substrate.
  • a portion of the MFC may be built into one or more layers of the substrate. For example, a flow restrictor (e.g., a filter with one or more small holes) or a flow diverter may be built into one or more layers of the substrate.
  • a discrete MFC may independently control each gas supply.
  • Example gas component arrangements, and methods and apparatuses for gas delivery are described, for example, in U.S. Patent Application Publication No. 2010/0326554, U.S. Patent Application Publication No. 2011/0005601, U.S. Patent Application Publication No. 2013/0255781, U.S. Patent Application Publication No. 2013/0255782, U.S. Patent Application Publication No. 2013/0255883, U.S. Patent No. 7,234,222, U.S. Patent No. 8,340,827, and U.S. Patent No. 8,521,461, each of which are commonly assigned, and the entire disclosures of which are hereby incorporated by reference herein in their entireties.
  • MFCs may be used to initiate the desired flow set point for each gas and then release the respective gases for immediate mixing in a mixing manifold or chamber within the gas delivery substrate.
  • Individual gas flow measurement and control may be performed by each respective MFC.
  • a single MFC controller may operate multiple gas lines.
  • the MFCs that are mounted to the substrate may be controlled by a remote server or controller.
  • Each of the MFCs may be a wide range MFC having the ability to perform as either a high flow MFC or a low flow MFC.
  • the controller may be configured to control and change the flow rate of a gas in each of the MFCs.
  • the present disclosure further provides, in implementations, a method of using a gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus for supplying process gas to a processing chamber of a plasma processing apparatus.
  • a method may include, for example, delivering different gases between gas supply components mounted on the substrate through conduits within the substrate to a mixing manifold or chamber within the substrate. Initially, the gases are delivered to the substrate through a plurality of gas inlets on a surface of the substrate. After mixing within a mixing manifold or chamber, the gases exit the substrate through one or more outlets.
  • the gas inlets may be equally spaced from a center mixing chamber of the mixing manifold, such that the length scale of each gas species is the same and when gas is flowed from gas supplies to the mixing manifold within the substrate, the gas delivery time for each gas is the same.
  • the gas supply components and gas inlets may be spaced in linear or non-linear arrangements.
  • Such a method may further include, for example, delivering gas through a gas delivery substrate including a first layer having vertical through-holes, a second layer having vertical through-holes and horizontal gas channels, and a third layer having vertical through-holes.
  • the first, second, and the third layers of the substrate may be bonded together such that the horizontal gas channels of the second layer may be in fluidic communication with at least some of the vertical through-holes in the first layer and/or the third layer.
  • the method further includes delivering the gas between a plurality of gas supply components via the second layer and the first layer and/or the third layer of the substrate.
  • the gas delivery substrate may include one or more openings for allowing gas to exit the substrate to one or more gas lines or to a downstream processing chamber.
  • the present disclosure provides a method of supplying process gas through a gas delivery substrate for mounting gas supply components to a processing chamber of a plasma processing apparatus.
  • a method may include, for example, delivery of gases from a plurality of gas supplies in fluidic communication with a plurality of gas inlets on a surface of a substrate for mounting gas supply components and having at least one mixing chamber and an outlet therefrom; flowing at least two different gases from the plurality of gas supplies to the substrate to create a gas mixture in the mixing chamber; and supplying the gas mixture to a plasma processing chamber fluidically coupled with the gas delivery substrate downstream of the substrate.
  • the gas mixture may be combined with a tuning gas before delivery to a downstream processing chamber.
  • mass flow controllers may initiate flow set points for each of the at least two different gases and release them simultaneously for immediate mixing in a mixing chamber within the substrate.
  • One of the gases may be a tuning gas which may be delivered to the mixing chamber.
  • gas may enter the substrate via a plurality of gas inlets/openings on a surface of the substrate and enter a mixing chamber within the substrate.
  • the gas mixture may then exit the substrate via one or more exit outlets/openings from the mixing chamber.
  • the gas may be delivered to one or more gas lines, or directly to a processing chamber.
  • the mixing chamber may be provided within one or more layers of the substrate or be external to the substrate.
  • the gas may be added to another array of gases or mixed gases, another substrate mounted with gas supply components, or a gas stick.
  • the above monolithic or layered substrate concepts may allow the components for controlling multiple different process gases of a semiconductor processing tool to be mounted to the same component, i.e., the monolithic or layered substrate.
  • the monolithic or layered substrate In previous gas distribution systems for
  • each process gas was typically handled by a discrete gas stick, i.e., the valves, mass flow controller(s), etc. for controlling each gas flow were mounted to a separate substrate, which, in some instances, was built up from modular substrate elements as shown in Figure 3.
  • a discrete gas stick i.e., the valves, mass flow controller(s), etc. for controlling each gas flow were mounted to a separate substrate, which, in some instances, was built up from modular substrate elements as shown in Figure 3.
  • such separate gas sticks (and their separate substrates) were then arranged in a linear array, with each gas stick teeing into a common mixing line (as opposed to a much smaller mixing chamber).
  • the mixing volume for a conventional gas box was typically provided by a long tube or flow channel that is connected to each gas stick in the linear array— thus, the mixing volume in a conventional gas box may be a tube or flow passage that is at least as long as the width of the side-by-side gas sticks, in aggregate. For example, if each gas stick is 1.5" in width, and there are 16 gas sticks, then the mixing volume in a conventional system may be a gas passage that is at least 24" in length; if the gas passage is a nominal 0.25" in diameter along this length, then the mixing volume of such a passage is greater than 4.7 cubic inches.
  • a monolithic or layered substrate may allow for radial arrays of gas flow components and flow passages, which, in turn, allows for a mixing volume that may be concentrated in a much smaller area and thus be much smaller in volume, e.g., less than a cubic inch. This smaller mixing volume size reduces purge times, as well as the time needed to effectively mix the gases flowed into the mixing chamber.
  • Another benefit offered by a radial array of gas flow components is that the final transit distance between the mixing chamber and the last fluid flow component for each process gas flow path may be made equal for each process gas, which makes the transit times of each process gas to the mixing chamber insensitive to the radial positioning of the terminal gas flow components for that process gas in the gas flow component array.
  • layered substrates may allow for most or all of the gas flow components downstream of the primary shut-off valve, i.e., most or all of the gas flow components typically included in a gas stick, for most or all of the process gas supply lines for a gas distribution system to be mounted to one common substrate.
  • the gas flow components for 12, 14, or 16 of these gases may be mounted to the same substrate.
  • the multi-layered substrate gas distribution systems described herein may, in some implementations, be made from ceramic layers that are bonded together or otherwise manufactured such that exterior surfaces of the substrate are ceramic.
  • ceramic materials present some unique
  • Ceramics are sintered materials, i.e., a powdered ceramic material is shaped into a form of some sort and then heated or "fired” at high temperature to fuse the ceramic particles into a cohesive solid.
  • a powdered ceramic material is shaped into a form of some sort and then heated or "fired” at high temperature to fuse the ceramic particles into a cohesive solid.
  • ceramics are typically low-strength and may be readily machined.
  • ceramics are much stronger but typically also more brittle.
  • most ceramic materials experience significant shrinkage, e.g., ⁇ 20%. Such shrinkage may not be uniform, which may introduce additional issues.
  • the machining of green ceramics may be performed using traditional machining techniques, e.g., milling, boring, drilling, etc., or by more advanced techniques, such as laser cutting. These techniques may, however, may leave a rough surface finish. For example, in laser cutting, outgassing from the laser cutting process may cause fluctuations in the laser beam intensity, width, and focusing, which may result in small surface irregularities that result in a rough surface finish.
  • the granular nature of the green ceramic may also contribute to increased surface roughness in a cera mic part, as compared with a machined metal part— even if the ceramic is machined using traditional techniques.
  • the sealing interface in a traditional gas stick arrangement is typically a metal-metal-metal contact arrangement.
  • Such sealing interfaces are typically provided by providing a shallow counterbore feature, typically sized based on the outer diameter of the crushable metal seal, on both the gas flow component base and the metal substrate.
  • the discussion herein relating to sealing surfaces may be applied to seals utilizing a variety of different crushable metal seals, including enseals, W-seals, and other seal types. Although the following discussion and examples feature C-seals, it is to be understood that the seal face preparation techniques discussed herein also may be applied to seals utilizing other types of crushable metal seals.
  • Figure 18 depicts an exploded section view of a typical C-seal interface between a gas supply component and a metal base.
  • Figure 19 depicts a section view of the assembled C-seal interface of Figure 18.
  • a gas supply component 1858 which may be made of metal, may be bolted to a metal base 1860; the gas supply component in this example is held in place with respect to the metal base 1860 by bolts 1846, which are threaded into nuts 1850.
  • the gas supply component 1858 and the metal base 1860 both have counterbore features 1862 that are sized to receive a metal C-seal 1856, which may be snapped into a seal retainer 1854 that may hold the metal C-seal 1856 in place during assembly and may ensure that the metal C-seal 1856 is properly seated before being compressed when the gas supply component 1858 is clamped to the metal base 1860.
  • the surfaces of such counterbore features that seal against the crushable metal seals are typically burnished to a surface roughness of 8-16 ⁇ Ra to provide a gas-tight connection for smaller-molecule gases such as helium, hydrogen, and Freon, or 16- 32 ⁇ Ra to provide a gas-tight connection for larger-molecule gases such as air, nitrogen, argon, and natural gases.
  • Surface finishes that are smoother than 8 ⁇ Ra may actually impair sealing, and are thus not recommended by manufacturers of crushable metal seals (see, for example, "Surface Roughness Recommendations" on page E-80 of the "Metal Seal Design Guide” published by Parker Hannifin
  • the present inventors determined that in the context of a ceramic/crushable metal seal interface, the ceramic portion of the interface may actually benefit from having a surface roughness range that is outside of the typical recommended surface roughness ranges.
  • the present inventors discovered that ceramic surfaces having surface roughnesses in the range of surface roughnesses recommended by the C-seal manufacturer did not provide a sufficiently leak-proof interface according to SEMI Fl standards.
  • SEMI is a global industry association for the semiconductor
  • the Fl standard (as of this writing, the Fl-0812 standard) is titled “Specification for Leak Integrity of High-Purity Gas Piping Systems and Components," and requires a "leak-tight" seal to have an inboard leak rate of less than 10 "9 cm 3 atmospheric He/sec.
  • the present inventors determined that the failure of industry-standard metal C-seal interfaces to achieve such leak rates when used to seal against a sintered ceramic surface was likely due to the fact that sintered ceramic materials are porous, whereas metal sealing surfaces are not.
  • the present inventors decided to polish the ceramic surface that seals against the metal C-seal to a surface roughness of 5 ⁇ Ra or better, which is more than 30% smoother than the minimum manufacturer-recommended surface roughness.
  • the resulting ceramic seal interfaces were tested with both standard 316L stainless steel C-seals and harder Hastelloy ® C-22 C-seals, and each exhibited leak characteristics meeting the SEMI Fl standards for over 50 assembly-disassembly cycles (the metal C-seals used were replaced after each cycle, as such seals are not re-usable).
  • This unexpected result suggests that standard crushable metal seals may be used with a ceramic sealing surface by polishing or lapping the ceramic sealing surface to a surface roughness that is considerably smoother than the typical manufacturer surface roughness recommendation.
  • Figure 20 depicts a flow diagram for a technique for preparing a ceramic substrate for interfacing with a gas flow component using a standard crushable metal seal, such as a metal C-seal.
  • a ceramic substrate, or layers thereof may be machined, e.g., machined in a green state, so as to have a number of gas flow channels and holes passing through the ceramic substrate that fluidically connect the channels with the exterior surface(s) of the ceramic substrate.
  • the ceramic substrate (or stacked layers thereof) may be fired in a kiln or oven in order to sinter the ceramic material used into a monolithic block.
  • the surfaces of the ceramic substrate where metal C-seals will be interfaced may be polished to a surface roughness less than or equal to 5 ⁇ R a .
  • a crushable metal seal may be located relative to a hole located either in the ceramic substrate or in a gas flow component.
  • the gas flow component may be mounted to the ceramic substrate, e.g., using a bolted connection, and then clamped in place, sandwiching the crushable metal seal between the polished or lapped portion of the ceramic substrate and the base of the gas flow component.
  • the ceramic substrate may, similar to conventional seal interfaces on steel components, have individual counterbores sized to receive a crushable metal seals, and the "floors" of such counterbores may be individually polished to achieve the 5 ⁇ R a or less surface roughness discussed above. If there are a multitude of such features, as will typically be the case in a multilayer substrate such as those discussed above, this may be time-consuming. An alternative approach is to forego individual counterbore features on the substrate, and instead simply polish or lap the entire surface(s) on which the gas flow components are to be mounted to the desired 5 ⁇ R a or less surface roughness.
  • a separate template or templates such as templates 1614 in Figure 17, which may be made of metal, ceramic, or other material, that is sized with a thickness that is similar to the depth of a "typical" counterbore feature used to receive a metal seal may be laid on top of the mounting surface(s) and interposed between the gas flow components and the substrate.
  • the template may have holes in locations corresponding to the holes in the ceramic substrate; these holes may be sized slightly larger than the outer diameter of the metal seals, and may serve to locate the metal seals relative to the holes in the ceramic substrate to which the gas flow components are being sealed. If this technique, which is described in more detail in U.S. Patent Application No.
  • the desired surface roughness for all of the seal interfaces on a common side of the ceramic substrate may be achieved using a single polishing or lapping operation on the entire side surface.
  • Figure 21 depicts a cross-section of an arrangement in which the entire surface of a ceramic substrate may be polished or lapped to a surface roughness of less than or equal to 5 ⁇ R a .
  • the upper surface of a ceramic substrate 2102 may be flat, allowing for the entire upper surface of the ceramic substrate 2102 to be polished or lapped at once to a surface roughness of less than or equal to 5 ⁇ R a .
  • a component-locating template 2114 may be placed on the ceramic substrate 2102 and lined up with a gas flow port 2164 on the ceramic substrate, such as the gas flow port depicted.
  • Such alignment may be achieved by lining up a reference feature or features on the template with corresponding reference features, such as a pin 2122, in the ceramic substrate 2102— this may allow the template to be aligned with multiple gas flow ports simultaneously.
  • a metal C-seal 2156 may be installed in a counterbore formed by a hole 2130 in the component-locating template 2114 that is of a larger diameter than the gas flow port in the ceramic substrate 2102 upon which the hole is centered.
  • a seal-locating template 2154 may assist with placement of the metal C- seal 2156.
  • a gas flow component 2158 having a counterbore 2162 around a port 2165 may be located on the metal C-seal and installed using bolts 2146 and nuts 2150, for example.
  • gas channel sidewall surface roughness arising from laser cutting of the channels was measured to be on the order of 185 to 255 ⁇ S a (area-based average roughness), as compared with surface roughnesses of 20 to 28 ⁇ S a for the bottoms or tops of such channels, which were provided by the surfaces of adjacent layers in the layered ceramic substrate and which were not laser cut.
  • the high surface roughness of the channel sidewalls presents a problem in that surfaces of such a high surface roughness are more likely to a) trap and retain particulates and b) more likely to be sources of particulates themselves, e.g., if a ceramic particle that contributes to the high surface roughness breaks off from the surface.
  • the particulate purging time for a ceramic substrate was more than twice as long as the particulate purging time for an equivalent stainless steel gas distribution manifold (although the stainless steel manifold was made with stainless steel tubing rather than as a layered substrate).
  • a purge gas is flowed through the gas flow system being tested and the time it takes until any particles that may be in the exiting gas flow are less than a certain size is evaluated. In the testing that was done, the time it took until only particles of less than lOOnm in size exited the substrate was used to determine the particle purging time.
  • the present inventors determined that subjecting a sintered ceramic substrate for use in a gas distribution system to a coating process may be an effective way to improve the surface finish within the channels and reduce or prevent particulate contamination.
  • the coating may serve two purposes: a) to trap any existing particles, e.g., ceramic particles that may not have effectively fused with neighboring ceramic particles during the sintering process, and b) to fill in the gaps and crevices that may exist between sintered ceramic particles, thereby reducing the available surface area on which particulates from elsewhere in the gas system may temporarily get caught or snagged.
  • Several different types of coatings may be used for such purposes, including glaze coatings, chemical vapor deposition (CVD) coatings, and atomic layer deposition (ALD) coatings, as well as other coating types that may provide the functionality discussed above.
  • a silica- or alumina-containing material may be applied to the exposed surfaces of a ceramic part and the ceramic part may then be exposed to high heat in a kiln or other oven, melting the silica-containing material.
  • the melted silica glaze re-cools, it will, due to being in a molten liquid state, have flowed into the gaps and crevices of the ceramic part, and will form a more rounded, smoother profile when it solidifies. Particulates that may have been lodged in the crevices and gaps of the ceramic part may be cemented in place by this coating.
  • Glazes may be applied through any of a variety of techniques, including by dry- dusting the channels and other surfaces of interest with the glaze material prior to insertion into a kiln, inserting glaze materials in the kiln or oven such that the glaze material migrates into the kiln atmosphere and thus transfers to the part to be glazed, or by suspending the glaze materials in an aqueous suspension, flowing the suspension through the channels, and then firing the ceramic component in the kiln.
  • the ceramic substrate may be placed in a CVD chamber and exposed to a chemical vapor deposition environment that deposits a polymer coating, such as a ParyleneTM coating, or other generally non-reactive coating, such as, for example, a silicon or alumina coating, on surfaces of the ceramic substrate.
  • a polymer coating such as a ParyleneTM coating
  • other generally non-reactive coating such as, for example, a silicon or alumina coating
  • the pedestal may have one or more vacuum ports that may correspond in location with locations in the exterior surface of the ceramic substrate with ports leading the channels within the ceramic substrate.
  • polymer coatings While very compatible with CVD processes, are somewhat fragile, and may be easily damaged. For example, if a polymer coating from a channel extends along the interior surfaces of a through-hole connecting that channel to an exterior surface of the ceramic substrate, and then extends to the exterior surface of the ceramic substrate, the polymer coating may, when a gas flow component that is mounted to that exterior surface of the ceramic substrate is removed for maintenance, stick to the gas flow component (or the metal seal that seals the gas flow component to the ceramic substrate) and pull away from the sidewalls of the through-hole when the gas flow component is removed. Each time the gas flow component is removed, there may be a potential for further damage to the coating, and gas flow components may need to be removed many times during the lifetime of the gas distribution system.
  • FIGS 23 through 25 depict simplified cross-sectional views of a ceramic substrate and masking components during various stages of a CVD coating application.
  • a plate or template 2462 may be placed against a ceramic substrate 2360.
  • the plate or template 2362 may have through-holes 2364 in it corresponding to the locations of each drop-hole or through-hole on an exterior surface of the ceramic substrate and may be placed over the ceramic substrate 2360 such that the through- holes 2364 on the plate or template line up with the corresponding drop-holes or through-holes in the ceramic substrate 2360.
  • the plate or template 2362 may, for example, be made of any suitable material, e.g., alumina, stainless steel, etc., and may include counterbores for locating seals 2366 that seal against the ceramic substrate 2360 at each drop-hole or through-hole location. When the plate or template 2362 is placed against the ceramic substrate 2360, these seals 2366 may be interposed between these two components at each drop-hole or through-hole location. In CVD operations, which typically occur at temperatures of several hundred degrees, metal seals may be used due to the high heat. The template or plate may then be fixed in space relative to the ceramic substrate, e.g., by bolting the two pieces together.
  • suitable material e.g., alumina, stainless steel, etc.
  • the exterior surface of the ceramic substrate to which the template or plate is mounted may be "masked” off by the template or plate, thereby preventing CVD of the coating 2368 on the ceramic substrate 2360 in the masked locations.
  • the template or plate 2362 may be removed, as shown in Figure 25.
  • the CVD coating 2368 which may have formed a generally conformal coating along the inside surfaces of the flow paths that bridge between the ceramic substrate 2360, the metal seals 2366, and the template or plate 2362, may break, tear, or otherwise experience an uncontrolled termination event at the ceramic substrate 2360/seal 2366 interface.
  • a first reactant may be flowed into a reactant chamber, usually followed by a purge cycle, and then a second reactant may be flowed into the reactant chamber.
  • the reactants typically react with the exposed surfaces of whatever component is in the chamber in a self-limiting way to produce a single-molecule thick layer.
  • each reactant flow may only react with the single-molecule thick layer of the previous reactant on the component that is exposed to the chamber atmosphere.
  • ALD coatings are 100% conformal, but must be manufactured one molecular layer at a time; this may require hundreds (or thousands) of repetitions of the first and second reactant deposition cycles to achieve a desired thickness, which means that ALD coating operations are typically far more time-consuming than CVD coating operations. Due to the conformal nature of ALD films, however, they form highly durable coatings. ALD may also be used to form nitride, alumina, or other ceramic coatings, allowing for the ceramic substrate channels to be coated in the same material that may be used to form the ceramic substrate.
  • the thickness of the layers formed on the surfaces of the gas flow channels within a ceramic substrate may be selected such that the layer thickness is either greater than the surface roughness, e.g., for a surface roughness of 250 ⁇ S a , the thickness may be 250 ⁇ or greater, or greater than the smallest particle size used in the manufacture of the ceramic substrate, e.g., if lOOnm diameter ceramic particles were sintered to form the ceramic substrate, then the coating may be at least lOOnm thick. Such coatings may "glue" potentially loose particles in place, and may also fill in crevices and gaps that may otherwise act to trap additional particulates.
  • a thinner surface coating may be used, although such a thinner surface coating may exhibit poorer particulate performance.
  • FIG. 22 depicts a flow diagram for a technique for preparing a ceramic substrate for a semiconductor tool gas distribution system so as to have a reduced likelihood of particulate contamination.
  • a ceramic substrate for a gas distribution system of a semiconductor processing tool may be manufactured. Such manufacture, for example, may by way of techniques discussed herein, or by other techniques not discussed herein.
  • the ceramic substrate resulting from block 2202 may generally be "complete,” in the sense that it has already been sintered and, in most cases, machined, if necessary.
  • the ceramic substrate may be coated with a corrosion-resistant coating to a desired depth, e.g., at least as large as the smallest, nominal size of ceramic particles used in the manufacture of the ceramic substrate or to a depth equivalent to the maximum surface roughness of the walls of the interior flow channels or passages of the ceramic substrate.
  • the coating operations of block 2204 may be provided by any suitable technique, including the three specific techniques shown.
  • a silica-containing glaze may be added in block 2206 to the gas flow channels and other interior passages within the ceramic substrate, e.g., through flowing aqueous glaze through the flow channels, applying dry glaze materials to the flow channels, or, alternatively, applying the glaze in the subsequent block via salt-firing the ceramic substrate.
  • the glazed ceramic substrate may be fired in a kiln or oven to a temperature above the melting point of the glaze, but below the melting point of the ceramic substrate.
  • the glaze may then melt and fuse with the ceramic substrate; once the glaze has been melted, the ceramic substrate may be removed from the kiln or oven and cooled, leaving a durable, chemically-resistant surface coating on the walls of the gas flow channels and other interior flow passages of the ceramic substrate that cements existing particles in place and provides less potential for trapping new particles that may be flowed into the ceramic substrate during use.
  • the ceramic substrate may optionally be prepared in block 2210 by masking off portions of the internal passages that are near the exterior surfaces of the ceramic substrate on which gas flow components may be mounted. For example, for each vertical through-hole that reaches the exterior surface of the ceramic substrate, a millimeter or so of that vertical through-hole that is closest to the exterior surface of the ceramic substrate may be masked off to avoid depositing the CVD material, e.g., a polymer, on that portion of the vertical through-hole. This may avoid potential damage to the CVD coating caused by interactions with other components that are mounted to the ceramic substrate.
  • the CVD material e.g., a polymer
  • the cera mic substrate may be placed into a CVD chamber.
  • the ceramic substrate may be one of several ceramic substrates that are placed into the same CVD chamber and coated simultaneously (batch-coating ceramic substrates may also be done if glazing or ALD coatings are pursued).
  • the cera mic substrate may be subjected to a CVD process in which a polymeric coating is deposited on the surfaces of the gas flow passages within the ceramic substrate.
  • the entire ceramic substrate may be subjected to the CVD operation.
  • the CVD process may be performed for a duration of sufficient length that the desired thickness of coating within the interior passages of the ceramic substrate is obtained.
  • the ceramic substrate may be placed in an ALD process chamber in block 2216, potentially with additional ceramic substrates that may be coated simultaneously. After the ceramic substrate is placed in the ALD process chamber in block 2216, the ceramic substrate may be subjected to a plurality of ALD cycles in block 2218 until the coating on the surfaces of the internal passages of the ceramic substrate have reached the desired thickness.
  • ALD-applied coatings a similar masking technique may be used as in CVD coatings, although re-usable rubber o-ring seals may be used in place of metal seals since ALD processes are often performed at much lower temperatures. While most ALD coatings may not be at risk of damage from mounting or dismounting gas flow components, it may be preferable nonetheless to institute a form of masking, similar to that described above with respect to CVD, and to confine the ALD process gases such that only a subset of the surfaces of the ceramic substrate, e.g., the interior passage surfaces, are coated with an ALD coating.
  • This may avoid subjecting the entire ceramic substrate to repeated ALD cycles, which may decrease the amount of time needed to purge each ALD process gas prior to initiating the next ALD cycle. For example, if the ALD process gases are confined so as to only flow into the internal passages of the ceramic substrate, it may generally only be necessary to purge those same passages, as compared with, for example, the larger process chamber volume. This may greatly decrease the time needed to form a coating of a desired thickness.

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