WO2016055006A1 - 一种弯曲多模光波导及其制作方法 - Google Patents
一种弯曲多模光波导及其制作方法 Download PDFInfo
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- WO2016055006A1 WO2016055006A1 PCT/CN2015/091489 CN2015091489W WO2016055006A1 WO 2016055006 A1 WO2016055006 A1 WO 2016055006A1 CN 2015091489 W CN2015091489 W CN 2015091489W WO 2016055006 A1 WO2016055006 A1 WO 2016055006A1
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- optical waveguide
- waveguide core
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- refractive index
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
Definitions
- the present invention relates to the field of optical interconnects, and more particularly to a curved multimode optical waveguide and a method of fabricating the same.
- optical interconnects have the advantages of large bandwidth, high interconnect density, and no electromagnetic interference. Therefore, optical interconnects provide a new choice for solving this bottleneck.
- optical interconnects at the system level between cabinets and cabinets, distances of 1-100 m
- Board-level optical interconnection has become the key breakthrough of the next step.
- optical interconnection has gradually replaced electrical interconnections at various levels such as module level and chip level for data transmission, which has become an inevitable trend in the development of future interconnection technologies.
- Planar optical waveguides are the basic unit for realizing optical interconnections at various levels, such as board level, module level, and chip level.
- Multimode optical waveguides have found wide application in interconnect technology due to the ease of alignment between the waveguides and the increased bandwidth of information transmission through mode multiplexing.
- the bending of the optical waveguide is indispensable in designing the optical interconnection path, and the design of such a curved waveguide faces some problems caused by the mode coupling effect.
- the coupling between modes in a curved waveguide is generally unavoidable.
- the coupling between such modes affects the data rate supported by the optical waveguide, and for mode multiplexing applications, crosstalk between modes is increased, affecting system performance.
- this mode coupling effect can be somewhat reduced by reducing the curvature of the curved waveguide, this method increases the device size on the one hand, and the other Aspects also fail to achieve a fundamental solution to the problem of mode coupling.
- a low-mode coupling effect curved optical waveguide is fabricated on a silicon-on-insulator (SOI) substrate, as shown in FIG.
- SOI silicon-on-insulator
- the asymmetric silicon core 1 in such an optical waveguide is realized by a gray scale lithography technique, the asymmetric silicon core 1 is located above the silicon oxide layer 2, and under the silicon oxide layer 2 is the silicon substrate 3.
- This optical waveguide is characterized in that the asymmetric silicon core 1 has a top-inclined geometry with a large thickness on the side close to the curvature center of the curved waveguide and a small thickness on the side away from the curvature center of the curved waveguide.
- the tilting of the core of the optical waveguide brings the shifting effect of the mode field (toward the center of curvature) and the shifting effect of the mode field (away from the center of curvature) caused by the bending, so that the mode field of the curved optical waveguide
- the distribution is close to the mode field distribution of the straight waveguide. Therefore, the mode coupling effect of the curved waveguide having such a core geometry is also reduced.
- the use of grayscale lithography on a silicon substrate to fabricate an optical waveguide having a slanted core shape requires special equipment, and thus faces cost problems. More importantly, this technique is limited to etched waveguides.
- Optical waveguides formed based on the diffusion principle for example, a typical glass-based ion-exchanged optical waveguide
- the optical waveguide manufactured by the glass substrate ion exchange technology belongs to the optical waveguide formed by the diffusion principle.
- Such optical waveguides are highly competitive in board-level optical interconnects because of the attractive nature of such optical waveguides, including low transmission loss, simple process, and low cost.
- the optical waveguides used in the board-level optical interconnection are all multimode optical waveguides.
- the curved optical waveguides are inevitable in the board-level optical interconnection network, and the optical waveguides fabricated by the conventional ion exchange technology are also faced with waveguide bending.
- Fig. 2 shows an optical waveguide fabricated on a glass substrate 4 by a conventional ion exchange technique.
- the refractive index distribution of the symmetric optical waveguide core 5 formed by such primary ion exchange is symmetric, so that the waveguide bend causes the mode field to occur. Offsets away from the center of curvature cause coupling between modes, affecting the bandwidth of the optical waveguide, and in the case of mode multiplexing, introduce crosstalk between modes.
- embodiments of the present invention are expected to provide a curved multimode optical waveguide and a method of fabricating the same, which can reduce the mode coupling effect of a curved multimode optical waveguide formed by the diffusion principle.
- an embodiment of the present invention provides a curved multimode optical waveguide including: at least one curved optical waveguide core; the optical waveguide core is configured to utilize ions on a substrate
- the curved multimode optical waveguide includes a plurality of the curved optical waveguide cores; the plurality of curved optical waveguide cores are sequentially connected.
- the inner doping ion concentration of the optical waveguide core is higher than the outer doping ion concentration, wherein the inner doping ion concentration is higher than the outer doping ion concentration to achieve the inner refractive index higher than the outer refractive index.
- the optical waveguide core is an optical waveguide core formed on the glass substrate by an ion diffusion principle.
- an embodiment of the present invention provides a method for fabricating a curved multimode optical waveguide, the method comprising:
- At least one optical waveguide core having an inner refractive index higher than the outer refractive index and curved is formed on the substrate by the ion diffusion principle.
- the process of fabricating the optical waveguide core on the substrate by using the ion diffusion principle includes:
- the step of fabricating a second optical waveguide core having an inner refractive index higher than an outer refractive index and curved on the basis of the first optical waveguide core by using an ion diffusion principle includes:
- a second optical waveguide core having a side doping ion concentration higher than the outer doping ion concentration and curved is formed on the first optical waveguide core by ion diffusion principle.
- the step of fabricating a second optical waveguide core having a side doping ion concentration higher than an outer doping ion concentration and bending on the first optical waveguide core portion by using an ion diffusion principle includes:
- the substrate is ion-exchanged, and then the mask is removed to obtain a second optical waveguide core having an inner doping ion concentration higher than the outer doping ion concentration and curved.
- the step of forming a mask on the substrate according to the radius of the first optical waveguide core and the second optical waveguide core to be formed to form a corresponding ion exchange window comprises:
- a mask is disposed on the substrate to form a corresponding ion exchange window, the inside of the ion exchange window a boundary radius is equal to an inner boundary radius of the first optical waveguide core, and an outer boundary radius of the ion exchange window is greater than a radius; an inner boundary radius of the first optical waveguide core is smaller than an outer boundary radius;
- a mask is disposed on the substrate to form a corresponding ion exchange window, an inner boundary of the ion exchange window
- the radius is equal to the inner boundary radius of the first optical waveguide core
- the outer boundary radius of the ion exchange window is equal to the outer boundary radius of the second waveguide core.
- the substrate comprises a glass substrate.
- the doping ions include silver ions, potassium ions, strontium ions or strontium ions.
- the embodiment of the present invention provides a curved multimode optical waveguide and a manufacturing method thereof, which can reduce the coupling effect between the modes in the curved multimode optical waveguide.
- the curved multimode optical waveguide provided by the embodiment of the present invention includes: At least one curved optical waveguide core; the optical waveguide core is an optical waveguide core formed on a substrate by an ion diffusion principle, and an inner refractive index of the optical waveguide core is higher than an outer refractive index;
- the refractive index distribution of the core has an asymmetrical characteristic, that is, the characteristic of the inner refractive index higher than the outer refractive index; the offset effect of the mode field (direction toward the center of curvature of the core of the optical waveguide) due to the asymmetric refractive index distribution
- the offset effect of the mode field (away from the center of curvature of the core of the optical waveguide) caused by the bending of the core of the optical waveguide is completely or partially offset, thereby reducing or eliminating the mode coupling effect
- Figure 1 is an asymmetric optical waveguide on a SOI substrate
- Figure 2 is a curved multimode optical waveguide on a conventional glass substrate
- FIG. 3 is a schematic diagram of a curved multimode optical waveguide according to Embodiment 1 of the present invention.
- FIG. 4 is a schematic flow chart of a method for fabricating a curved multimode optical waveguide according to Embodiment 1 of the present invention.
- FIG. 5 is a schematic diagram of a manufacturing process of a curved multimode optical waveguide according to Embodiment 2 of the present invention.
- FIG. 6 is a schematic diagram of a manufacturing process of a curved multimode optical waveguide according to Embodiment 3 of the present invention.
- Embodiment 1 is a diagrammatic representation of Embodiment 1:
- this embodiment provides a A curved multimode optical waveguide having a mode coupling effect in a low-bend multimode optical waveguide, specifically comprising: at least one curved optical waveguide core; the optical waveguide core being an optical waveguide core formed on a substrate by an ion diffusion principle And the inner refractive index of the optical waveguide core is higher than the outer refractive index.
- the inner side of the optical waveguide core refers to the side of the optical waveguide core near the center of curvature of the optical waveguide core
- the outer side of the optical waveguide core refers to the center of curvature of the optical waveguide core away from the optical waveguide core.
- the substrate in this embodiment may be a glass substrate, and the optical waveguide core formed by the ion diffusion principle in this embodiment may include an optical waveguide core formed by ion exchange technology.
- the refractive index of the core portion is asymmetrically distributed, that is, the inner refractive index is higher than the outer refractive index.
- the offset effect of the mode field (toward the center of curvature of the core of the optical waveguide) caused by the asymmetric refractive index distribution and the mode field (distance from the center of curvature of the core of the optical waveguide) caused by the bending of the core of the optical waveguide The effect is completely or partially offset, reducing or eliminating the mode coupling effect in the multimode curved waveguide; therefore, the bandwidth reduction due to mode coupling and the increased crosstalk increase adversely affect the transmission system.
- the present embodiment provides an optical waveguide fabricated on a glass substrate, which comprises an optical waveguide core 6 having an asymmetric refractive index formed on the glass substrate 4, and an optical waveguide.
- the inner refractive index of the core portion 6 is higher than the outer refractive index; the mode field (direction toward the center of curvature) caused by the asymmetric optical waveguide core portion 6 and the mode field due to the bending of the optical waveguide (away from the center of curvature)
- the offset effect is completely or partially offset, reducing or eliminating the mode coupling effect in the multimode curved waveguide.
- the curved multimode optical waveguide provided in this embodiment may include a plurality of the curved optical waveguide cores; the plurality of curved optical waveguide cores are sequentially connected; that is, the curved multimode optical waveguide of the embodiment
- the bending direction may be plural, for example, two optical waveguide cores having opposite bending directions are connected, and the inner refractive index of each optical waveguide core is higher than the outer refractive index.
- the inner refractive index of the optical waveguide core is higher than the outer refractive index, and the inner refractive index concentration of the optical waveguide core may be higher than the outer doping ion concentration.
- the refractive index can be changed by changing the doping ion concentration.
- the doping ions in this embodiment may be selected from silver ions, potassium ions, strontium ions or strontium ions.
- the glass substrate includes a silicate glass substrate, a borate glass substrate, and the like.
- Embodiment 2 is a diagrammatic representation of Embodiment 1:
- this embodiment provides a method for manufacturing a curved multimode optical waveguide, which can Reducing the mode coupling effect in a curved multimode optical waveguide, the fabrication method includes:
- At least one optical waveguide core having an inner refractive index higher than the outer refractive index and curved is formed on the substrate by the ion diffusion principle.
- the curved multimode optical waveguide produced by the fabrication method of the present embodiment has a refractive index of the core which is asymmetrically distributed, that is, the inner refractive index is higher than the inner refractive index.
- the offset effect of the mode field (toward the center of curvature of the core of the optical waveguide) caused by the asymmetric refractive index distribution and the mode field (distance from the center of curvature of the core of the optical waveguide) caused by the bending of the core of the optical waveguide The effect is completely or partially offset, thereby reducing or eliminating the mode coupling effect in the multimode curved waveguide; therefore, the bandwidth reduction due to mode coupling and the increased crosstalk increase adversely affect the transmission system.
- the process of fabricating the optical waveguide core on a substrate by using the ion diffusion principle in the method of the embodiment includes:
- Step 401 A first optical waveguide core having a symmetric distribution and a curved refractive index is formed on the substrate by using an ion diffusion principle.
- the first optical waveguide core having a symmetrically distributed refractive index and curved is formed on the substrate by using the diffusion principle according to the radius and the width of the optical waveguide to be fabricated, and the refractive index is symmetrically distributed to indicate the inner refractive index.
- Equal to the outer refractive index for example, it can be on the substrate first Forming a first optical waveguide core having a symmetrically distributed refractive index and bending, while the radius and width of the first optical waveguide core are the same as the radius and width of the optical waveguide to be fabricated; or a refraction can be made on the substrate
- the first optical waveguide core is symmetrically distributed and curved, while the radius and width of the first optical waveguide core are smaller than the radius and width of the optical waveguide produced.
- Fabricating a curved multimode optical waveguide on a substrate using the diffusion principle in this embodiment includes fabricating a curved multimode optical waveguide on a substrate using ion exchange techniques. Therefore, this step can use the ion exchange technique to fabricate the first optical waveguide core on the substrate.
- Step 402 On the basis of the ion diffusion principle, a second optical waveguide core whose inner refractive index is higher than the outer refractive index and curved is formed on the basis of the first optical waveguide core.
- the curved multimode optical waveguide finally produced by the fabrication method of the present embodiment is fabricated on the basis of the first optical waveguide core, for example, for the first optical waveguide core having the same radius and width as the radius and width of the optical waveguide to be fabricated.
- the diffusion principle can be utilized to change the refractive index of the first optical waveguide core from symmetrical to asymmetrical, in which case the first optical waveguide core is the second optical waveguide core; and, for example, the radius and the width are smaller than the light to be produced.
- the first optical waveguide core of the waveguide radius and the width can further form a second optical waveguide core having a refractive index asymmetrically distributed and having a radius and a wide band conforming to the manufacturing size requirements on the first optical waveguide core by using the diffusion principle.
- a second optical waveguide core can be fabricated on the basis of the first optical waveguide core by ion exchange technology.
- an optical waveguide core having a medial refractive index higher than the outer refractive index and curved may be fabricated through steps 401-402, and then a plurality of inner refractive indexes are higher than the outer refractive index by repeating steps 401-402. Curved optical waveguide core.
- the method of this embodiment can be performed by two or more ion diffusion principles such as ion exchange technology.
- the curved multimode optical waveguide is fabricated, so the above step 401 can form the first optical waveguide core by one or more diffusion principles, and the above step 402 can also form the second optical waveguide core by one or more diffusion principles.
- Department; the specific number of times is not limited, can be determined according to the actual situation.
- the second optical waveguide core having a higher inner refractive index than the outer refractive index and curved is formed on the first optical waveguide core by using an ion diffusion principle.
- the steps include:
- a second optical waveguide core having a side doping ion concentration higher than the outer doping ion concentration and curved is formed on the first optical waveguide core by ion diffusion principle.
- the method of the present embodiment makes the inner refractive index of the optical waveguide core higher than the outer refractive index by making the doping ion concentration inside the optical waveguide core higher than the outer doping ion concentration.
- the method of the present embodiment can design a reasonable mask shape so that the ion waveguide cross-section doping ion concentration distribution can be formed by ion exchange technology with the desired asymmetry.
- the process of fabricating a second optical waveguide core having an asymmetric refractive index and bending on the first optical waveguide core using an ion exchange technique includes:
- the substrate is ion-exchanged, and then the mask is removed to obtain a second optical waveguide core having an inner doping ion concentration higher than the outer doping ion concentration and curved.
- a mask is formed on the substrate according to the radius of the first optical waveguide core and the second optical waveguide core to be formed to form a corresponding ion exchange window.
- the specific process includes:
- a mask is disposed on the substrate to form a corresponding ion exchange window, the inside of the ion exchange window a boundary radius is equal to an inner boundary radius of the first optical waveguide core, and an outer boundary radius of the ion exchange window is greater than a radius; an inner boundary radius of the first optical waveguide core is smaller than an outer boundary radius;
- a mask is disposed on the substrate to form a corresponding ion exchange window, an inner boundary of the ion exchange window
- the radius is equal to the inner boundary radius of the first optical waveguide core
- the outer boundary radius of the ion exchange window is equal to the outer boundary radius of the second waveguide core.
- the refractive index distribution of the curved multimode optical waveguide fabricated by the manufacturing method of the embodiment is asymmetric, which reduces the coupling effect between the modes in the curved optical waveguide, and reduces the bandwidth reduction and crosstalk caused by the mode coupling. Increase the adverse effects on the transmission system.
- Embodiment 3 is a diagrammatic representation of Embodiment 3
- a curved multimode optical waveguide having a radius of 5 cm (50000 ⁇ m) and a width of 50 ⁇ m (that is, a radius of the inner boundary and the outer boundary of the curved waveguide are respectively 49975 ⁇ m and 50025 ⁇ m) is taken as an example, and the fabrication described in the first embodiment is described.
- the method is characterized in that: the susceptor is a soda-lime-silica glass substrate, and the doping ions are silver ions; and the bending multi-mode optical waveguide is substantially composed of the following six steps, as shown in FIG. 5, including:
- A-B step photolithography and masking.
- the glass substrate 4 is prepared and cleaned, and then an aluminum film having a thickness of about 200 nm to 300 nm is uniformly evaporated by a thermal evaporation process, and is subjected to standard microfabrication techniques (lithography, etching, degumming, etc.) on the glass substrate.
- a mask 7 is formed.
- the inner and outer boundaries of the ion exchange window formed by the mask 7 have radii of 49,975 ⁇ m and 50,000 ⁇ m, respectively.
- (BC) step the first ion exchange, the glass substrate 4 prepared with the mask 7 is placed in a mixed molten salt of sodium nitrate, calcium nitrate and silver nitrate melted at 260 ° C (sodium nitrate and calcium nitrate) According to the mass ratio of 420:580:1), the temperature is kept for 4 hours. Silver ion in the molten salt during this process The ion exchange window formed by the mask 7 diffuses into the glass substrate 4 to form a symmetrical optical waveguide core 5. The glass substrate 4 was taken out, cooled to room temperature, and washed.
- (C-D) step Mask 7 is removed.
- the mask 7 on the surface of the glass substrate 4 is removed by chemical etching.
- (EF) step the second ion exchange, the glass substrate 7 prepared by the mask 7 is placed in a mixed solution of sodium nitrate, calcium nitrate and silver nitrate melted at 260 ° C (sodium nitrate and calcium nitrate according to the quality The ratio is 420:580:1) and the temperature is kept for 4 hours. During this process, silver ions in the molten salt diffuse into the glass substrate 4 through the ion exchange window formed by the mask 7, and the symmetric optical waveguide core 5 becomes the asymmetric optical waveguide core 6. The glass substrate 4 was taken out, cooled to room temperature, and washed. The glass substrate 4 was taken out, cooled to room temperature, and washed.
- (F-G) step Mask 7 is removed.
- the mask 7 on the surface of the glass substrate 4 is removed by chemical etching.
- Embodiment 4 is a diagrammatic representation of Embodiment 4:
- a curved multimode optical waveguide having a radius of 5 cm (50000 ⁇ m) and a width of 50 ⁇ m (ie, the inner and outer boundaries of the curved waveguide have a radius of 49975 ⁇ m and 50025 ⁇ m, respectively) is taken as an example to describe the first embodiment.
- Production method wherein, the substrate is a soda-lime-silica glass substrate, and the doping ions are silver ions, and the optical waveguide is roughly divided into the following six steps (see FIG. 6, A-B, B-C, C-D, D-E, E-F, F-G):
- A-B step photolithography and masking.
- the glass substrate 4 is prepared and cleaned, and then an aluminum film having a thickness of about 200 nm to 300 nm is uniformly evaporated by a thermal evaporation process, and is subjected to standard microfabrication techniques (lithography, etching, degumming, etc.) on the glass substrate.
- a mask 7 is formed. Formed by mask 7
- the inner and outer boundaries of the ion exchange window have radii of 49,975 ⁇ m and 50025 ⁇ m, respectively.
- (BC) step the first ion exchange, the glass substrate 4 prepared with the mask 7 is placed in a mixed molten salt of sodium nitrate, calcium nitrate and silver nitrate melted at 260 ° C (sodium nitrate and calcium nitrate) According to the mass ratio of 420:580:1), the temperature is kept for 4 hours. During this process, silver ions in the molten salt diffuse into the glass substrate 4 through the ion exchange window formed by the mask 7, forming a symmetric optical waveguide core 5. The glass substrate 4 was taken out, cooled to room temperature, and washed.
- (C-D) step Mask 7 is removed.
- the mask 7 on the surface of the glass substrate 4 is removed by chemical etching.
- (EF) step the second ion exchange, the glass substrate 7 prepared by the mask 7 is placed in a mixed solution of sodium nitrate, calcium nitrate and silver nitrate melted at 260 ° C (sodium nitrate and calcium nitrate according to the quality The ratio is 420:580:1) and the temperature is kept for 4 hours. During this process, silver ions in the molten salt diffuse into the glass substrate 4 through the ion exchange window formed by the mask 7, and the symmetric optical waveguide core 5 becomes the asymmetric optical waveguide core 6. The glass substrate 4 was taken out, cooled to room temperature, and washed. The glass substrate 4 was taken out, cooled to room temperature, and washed.
- (F-G) step Mask 7 is removed.
- the mask 7 on the surface of the glass substrate 4 is removed by chemical etching.
- Embodiment 5 is a diagrammatic representation of Embodiment 5:
- a multimode optical waveguide having a radius of 5 cm (50000 ⁇ m) and a width of 50 ⁇ m (that is, a radius of the inner boundary and the outer boundary of the curved waveguide are respectively 49975 ⁇ m and 50025 ⁇ m) is taken as an example, and the manufacturing method of the first embodiment is described.
- the substrate is a soda-lime-silica glass substrate, and the doping ions are potassium ions.
- the optical waveguide is roughly divided into the following six steps (similar to Figure 5, A-B, B-C, C-D, D-E, E-F, F-G).
- A-B step photolithography and masking.
- the glass substrate 4 is prepared and cleaned, and then an aluminum film having a thickness of about 200 nm to 300 nm is uniformly evaporated by a thermal evaporation process, and is subjected to standard microfabrication techniques (lithography, etching, degumming, etc.) on the glass substrate.
- a mask 7 is formed.
- the inner and outer boundaries of the ion exchange window formed by the mask 7 have radii of 49,975 ⁇ m and 50,000 ⁇ m, respectively.
- (C-D) step Mask 7 is removed.
- the mask 7 on the surface of the glass substrate 4 is removed by chemical etching.
- (E-F) step For the second ion exchange, the glass substrate 7 prepared by the mask 7 was placed in a molten potassium nitrate molten salt at 260 ° C, and kept for 4 hours. During this process, potassium ions in the molten salt diffuse into the glass substrate 4 through the ion exchange window formed by the mask 7, and the symmetric optical waveguide core 5 becomes the asymmetric optical waveguide core 6. The glass substrate 4 was taken out, cooled to room temperature, and washed. The glass substrate 4 was taken out, cooled to room temperature, and washed.
- (F-G) step Mask 7 is removed.
- the mask 7 on the surface of the glass substrate 4 is removed by chemical etching.
- This embodiment also produces a multimode optical waveguide having a radius of 5 cm (50000 ⁇ m) and a width of 50 ⁇ m (ie, the inner and outer boundaries of the curved waveguide have radii of 49,975 ⁇ m and Taking 50025 ⁇ m) as an example, the method described in Example 1 is described, but wherein the substrate is a soda-lime-silica glass substrate and the doping ions are potassium ions.
- the optical waveguide is roughly divided into the following six steps (see Fig. 6, A-B, B-C, C-D, D-E, E-F, F-G).
- A-B step photolithography and masking.
- the glass substrate 4 is prepared and cleaned, and then an aluminum film having a thickness of about 200 nm to 300 nm is uniformly evaporated by a thermal evaporation process, and is subjected to standard microfabrication techniques (lithography, etching, degumming, etc.) on the glass substrate.
- a mask 7 is formed.
- the inner and outer boundaries of the ion exchange window formed by the mask 7 have radii of 49,975 ⁇ m and 50025 ⁇ m, respectively.
- (C-D) step Mask 7 is removed.
- the mask 7 on the surface of the glass substrate 4 is removed by chemical etching.
- (E-F) step For the second ion exchange, the glass substrate 7 prepared by the mask 7 was placed in a molten potassium nitrate molten salt at 260 ° C, and kept for 4 hours. During this process, potassium ions in the molten salt diffuse into the glass substrate 4 through the ion exchange window formed by the mask 7, and the symmetric optical waveguide core 5 becomes the asymmetric optical waveguide core 6. The glass substrate 4 was taken out, cooled to room temperature, and washed. The glass substrate 4 was taken out, cooled to room temperature, and washed.
- (F-G) step Mask 7 is removed.
- the mask 7 on the surface of the glass substrate 4 is removed by chemical etching.
- the curved multimode optical waveguide comprises: at least one curved optical waveguide core; the optical waveguide core is an optical waveguide core formed on the substrate by an ion diffusion principle, and the optical waveguide core
- the inner refractive index of the portion is higher than the outer refractive index; since the refractive index distribution of the optical waveguide core has an asymmetrical characteristic, that is, the inner refractive index is higher than the outer refractive index; the mode field caused by the asymmetric refractive index distribution
- the offset effect (in the direction of the center of curvature of the core of the optical waveguide) is completely or partially offset by the offset effect of the mode field (away from the center of curvature of the core of the optical waveguide) caused by the bending of the core of the optical waveguide, thereby reducing or eliminating multimode Mode coupling effect in a curved waveguide.
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Abstract
一种弯曲多模光波导及其制作方法;其中弯曲多模光波导包括:至少一个弯曲的光波导芯部(6);光波导芯部(6)为在基底(4)上利用离子扩散原理形成的光波导芯部(6),且光波导芯部(6)的内侧折射率高于外侧折射率。
Description
本发明涉及光互连领域,尤其涉及一种弯曲多模光波导及其制作方法。
随着社交网络、流媒体和云计算等互联网业务的出现和快速发展,网络数据流量呈现高速增长的态势,由于网络数据流量的不断增长,传统的基于铜连线的电互连技术遇到能耗、波形失真、电磁干扰、以及互连密度和串扰等多方面的“电子瓶颈”。与电互连相比,光互连具有带宽大、互连密度高、无电磁干扰等优势,因此光互连为解决这一瓶颈提供了新的选择。截至目前,在数据中心和高性能计算机中,系统级(机柜间和机柜内部,距离1-100m)的光互连已经获得广泛应用,电路板间和电路板上模块间(0.1-100m)的板级光互连成为下一步重点突破的目标,而且,光互连在模块级和芯片级等各个层面逐步替代电互连进行数据传输已经成为未来互连技术的发展的必然趋势。
平面光波导是实现电路板级、模块级以及芯片级等各个层次光互连的基本单元。由于波导之间的对准方便,而且可以通过模式复用增加信息传输的带宽,因此多模光波导在互连技术中获得了广泛应用。光波导的弯曲在设计光互连通路中必不可少,这种弯曲波导的设计面临着由模式耦合效应带来的一些难题。与直波导中的各个模式独立传输的情况不同,弯曲波导中模式之间的耦合一般情况下不可避免。这种模式之间的耦合会影响光波导所支持的数据速率,并且,对于模式复用的应用,会使模式之间的串扰增大,影响系统的性能。虽然可以通过减小弯曲波导的曲率使这种模式耦合效应得到一定程度的减轻,但这种方法一方面会增大器件尺寸,另一
方面也无法使模式耦合问题获得根本解决。
目前为解决片上光互连中弯曲波导中的模式耦合效应,在绝缘体上硅结构(SOI,Silicon On Insulator)基片上制作了的低模式耦合效应的弯曲光波导,如图1所示。这种光波导中的非对称硅质芯部1采用灰度光刻技术实现,非对称硅质芯部1位于氧化硅层2之上,氧化硅层2下面是硅衬底3。这种光波导的特征在于非对称硅质芯部1具有顶部倾斜的几何形状,在靠近弯曲波导曲率中心的一侧厚度大,而远离弯曲波导曲率中心的一侧厚度小。这种光波导的芯部倾斜带来模场(向曲率中心方向的)偏移效应和弯曲带来的模场(远离曲率中心方向)偏移效应相互抵消,所以这种弯曲光波导的模场分布与直波导的模场分布特征接近。因此具有这种芯部几何形状的弯曲波导的模式耦合效应也被降低。但这种在硅基上采用灰度光刻技术制作倾斜芯部形状的光波导需要特殊的设备,因而面临成本方面的问题,更重要的,这项技术仅限于刻蚀法制备的波导,而对基于扩散原理形成的光波导(譬如,典型的玻璃基离子交换光波导)则不能使用。
玻璃基片离子交换技术制造的光波导属于扩散原理形成的光波导。这种光波导在板级光互连中有强大的竞争力,原因在于这类光波导有一系列诱人的性质,包括传输损耗低、工艺简单,成本低等。板级光互连中使用的光波导都是多模光波导,如上所述,弯曲光波导在板级光互连网络中不可避免,采用通常的离子交换技术制作的光波导也面临着波导弯曲带来的模式耦合效应。图2给出了采用通常的离子交换技术在玻璃基片4上制作的光波导,这种一次离子交换形成的对称光波导芯部5的折射率分布对称的,因此波导弯曲会使模场发生远离曲率中心方向的偏移,使模式之间发生耦合,影响到光波导的带宽,并且在模式复用的情况下,带来模式之间的串扰。
发明内容
为解决上述技术问题,本发明实施例期望提供一种弯曲多模光波导及其制作方法,能够降低利用扩散原理形成的弯曲多模光波导的模式耦合效应。
本发明实施例的技术方案是这样实现的:
为解决上述技术问题,本发明实施例提供了一种弯曲多模光波导,所述弯曲多模光波导包括:至少一个弯曲的光波导芯部;所述光波导芯部为在基底上利用离子扩散原理形成的光波导芯部,且所述光波导芯部的内侧折射率高于外侧折射率。
上述方案中,所述弯曲多模光波导包括多个所述弯曲的光波导芯部;所述多个弯曲的光波导芯部依次相连。
上述方案中,所述光波导芯部的内侧掺杂离子浓度高于外侧掺杂离子浓度,其中,内侧掺杂离子浓度高于外侧掺杂离子浓度实现了内侧折射率高于外侧折射率。
上述方案中,所述光波导芯部为在玻璃基底上利用离子扩散原理形成的光波导芯部。
同样为了解决上述技术问题,本发明实施例提供了一种弯曲多模光波导的制作方法,所述方法包括:
利用离子扩散原理在基底上制作至少一个内侧折射率高于外侧折射率且弯曲的光波导芯部。
上述方案中,利用离子扩散原理在基底上制作所述光波导芯部的过程包括:
利用离子扩散原理在所述基底上制作折射率呈对称分布并且弯曲的第一光波导芯部;
利用离子扩散原理在所述第一光波导芯部基础上制作出内侧折射率高
于外侧折射率且弯曲的第二光波导芯部。
上述方案中,所述利用离子扩散原理在所述第一光波导芯部基础上制作出内侧折射率高于外侧折射率且弯曲的第二光波导芯部的步骤包括:
利用离子扩散原理在所述第一光波导芯部基础上制作出内侧掺杂离子浓度高于外侧掺杂离子浓度且弯曲的第二光波导芯部。
上述方案中,所述利用离子扩散原理在所述第一光波导芯部基础上制作出内侧掺杂离子浓度高于外侧掺杂离子浓度且弯曲的第二光波导芯部的步骤包括:
根据所述第一光波导芯部和待制作的第二光波导芯部的半径在所述基底上设置掩膜形成对应的离子交换窗口,所述离子交换窗口用于在离子交换过程中供掺杂离子扩散进入所述基底;
对所述基底进行离子交换,然后去掩膜得到内侧掺杂离子浓度高于外侧掺杂离子浓度且弯曲的第二光波导芯部。
上述方案中,所述根据所述第一光波导芯部和待制作的第二光波导芯部的半径在所述基底上设置掩膜形成对应的离子交换窗口的步骤包括:
当所述第一光波导芯部的半径与待制作的所述第二光波导芯部的半径相等时,在所述基底上设置掩膜形成对应的离子交换窗口,所述离子交换窗口的内边界半径与所述第一光波导芯部的内侧边界半径相等,所述离子交换窗口的外边界半径大于半径所述第一光波导芯部的内侧边界半径小于外侧边界半径;
当所述第一光波导芯部的半径小于待制作的所述第二光波导芯部的半径时,在所述基底上设置掩膜形成对应的离子交换窗口,所述离子交换窗口的内边界半径与所述第一光波导芯部的内侧边界半径相等,所述离子交换窗口的外边界半径与所述第二波导芯部外侧边界半径相等。
上述方案中,所述基底包括玻璃基底。
上述方案中,所述掺杂离子包括银离子、钾离子、铷离子或者铯离子。
本发明实施例提供了一种弯曲多模光波导及其制作方法,可以降低弯曲多模光波导中模式之间的耦合效应;具体地,本发明实施例提供的弯曲多模光波导,包括:至少一个弯曲的光波导芯部;所述光波导芯部为在基底上利用离子扩散原理形成的光波导芯部,且所述光波导芯部的内侧折射率高于外侧折射率;由于光波导芯部折射率分布具有非对称的特征,即内侧折射率高于外侧折射率的特征;这种非对称的折射率分布带来的模场(向光波导芯部曲率中心方向的)偏移效应与光波导芯部弯曲带来的模场(远离光波导芯部曲率中心方向)偏移效应完全或部分抵消,从而减小或消除多模弯曲波导中的模式耦合效应;进而减弱了模式耦合带来的带宽减小和串扰增大给传输系统带来的不利影响。
图1为SOI基片上的非对称光波导;
图2为传统的玻璃基片上的弯曲多模光波导;
图3为本发明实施例一提供的一种弯曲多模光波导的示意图;
图4为本发明实施例一提供的一种弯曲多模光波导的制作方法的流程示意图;
图5为本发明实施例二提供的一种弯曲多模光波导的制作流程示意图;
图6为本发明实施例三提供的一种弯曲多模光波导的制作流程示意图。
下面通过具体实施方式结合附图对本发明作进一步详细说明。
实施例一:
考虑到目前基于扩散原理形成的弯曲光波导的弯曲会使模场发生远离曲率中心方向的偏移,使模式之间发生耦合;本实施例提供了一种可以降
低弯曲多模光波导中的模式耦合效应的弯曲多模光波导,具体包括:至少一个弯曲的光波导芯部;所述光波导芯部为在基底上利用离子扩散原理形成的光波导芯部,且所述光波导芯部的内侧折射率高于外侧折射率。
本实施例中光波导芯部的内侧指的是光波导芯部上靠近光波导芯部曲率中心的一侧,光波导芯部的外侧指的是光波导芯部上远离光波导芯部曲率中心的一侧。
在一具体子实施例中,本实施例中的基底可以玻璃基底,本实施例中利用离子扩散原理形成的光波导芯部可以包括利用离子交换技术形成的光波导芯部。
本实施例提供的弯曲多模光波导,其芯部折射率成非对称分布特性,即内侧折射率高于外侧折射率。这种非对称的折射率分布带来的模场(向光波导芯部曲率中心方向的)偏移效应与光波导芯部弯曲带来的模场(远离光波导芯部曲率中心方向)偏移效应完全或部分抵消,减小或消除多模弯曲波导中的模式耦合效应;因此,减弱了模式耦合带来的带宽减小和串扰增大给传输系统带来的不利影响。
如图3所示,为本实施例提供一种在玻璃基片上制作的光波导,其包括一个在玻璃基片4上具有离子交换形成的折射率呈非对称的光波导芯部6,光波导芯部6内侧折射率高于外侧折射率;由非对称光波导芯部6带来的模场(向曲率中心方向的)偏移效应与光波导弯曲带来的模场(远离曲率中心方向)偏移效应完全或部分抵消,减小或消除多模弯曲波导中的模式耦合效应。
本实施例提供的弯曲多模光波导,可以包括多个所述弯曲的光波导芯部;所述多个弯曲的光波导芯部依次相连;也就是说本实施例的弯曲多模光波导的弯曲方向可以为多个,例如有两个弯曲方向相反的光波导芯部相连构成,且每个光波导芯部的内侧折射率高于外侧折射率。
在本实施例中所述光波导芯部的内侧折射率高于外侧折射率实现方式可以包括:使得所述光波导芯部的内侧掺杂离子浓度高于外侧掺杂离子浓度。本实施例中可以通过改变掺杂离子浓度来改变折射率。
上述方案中,本实施例中掺杂离子可选择银离子、钾离子、铷离子或铯离子。玻璃基底包括硅酸盐玻璃基底、硼酸盐玻璃基底等。
实施例二:
考虑到目前基于扩散原理形成的弯曲光波导的弯曲会使模场发生远离曲率中心方向的偏移,使模式之间发生耦合,本实施例提供了一种弯曲多模光波导的制作方法,可以降低弯曲多模光波导中的模式耦合效应,该制作方法包括:
利用离子扩散原理在基底上制作至少一个内侧折射率高于外侧折射率且弯曲的光波导芯部。
利用本实施例制作方法制作的弯曲多模光波导,其芯部折射率成非对称分布特性,即内侧折射率高于内侧折射率。这种非对称的折射率分布带来的模场(向光波导芯部曲率中心方向的)偏移效应与光波导芯部弯曲带来的模场(远离光波导芯部曲率中心方向)偏移效应完全或部分抵消,从而减小或消除多模弯曲波导中的模式耦合效应;因此,减弱了模式耦合带来的带宽减小和串扰增大给传输系统带来的不利影响。
如图4所示,本实施例方法中利用离子扩散原理在基底上制作所述光波导芯部的过程,包括:
步骤401:利用离子扩散原理在所述基底上制作折射率呈对称分布并且弯曲的第一光波导芯部。
本实施例制作方法首先可以根据待制作的光波导的半径和宽度利用扩散原理在基底上制作折射率呈对称分布并且弯曲的第一光波导芯部,折射率呈对称分布指的是内侧折射率等于外侧折射率;例如,可以先在基底上
制作一个折射率呈对称分布并且弯曲的第一光波导芯部,同时该第一光波导芯部的半径和宽度与待制作的光波导的半径和宽度相同;又或者可以在基底上制作一个折射率呈对称分布并且弯曲的第一光波导芯部,同时该第一光波导芯部的半径和宽带小于带制作的光波导的半径和宽度。
本实施例中利用扩散原理在基底上制作弯曲多模光波导包括利用离子交换技术在基底上制作弯曲多模光波导。因此,本步骤可以利用离子交换技术在基底上制作第一光波导芯部。
步骤402:利用离子扩散原理在所述第一光波导芯部基础上制作出内侧折射率高于外侧折射率且弯曲的第二光波导芯部。
本实施例制作方法最终制成的弯曲多模光波导是在第一光波导芯部基础上制作成,例如对于半径和宽度与待制成光波导半径和宽度相等的第一光波导芯部,可以利用扩散原理使得第一光波导芯部的折射率由对称变为非对称,此时第一光波导芯部即为第二光波导芯部;又例如,对于半径和宽度小于待制成光波导半径和宽度的第一光波导芯部,可以利用扩散原理进一步在第一光波导芯部上制作出折射率成非对称分布并且半径、宽带符合制作尺寸要求的第二光波导芯部。
本步骤中可以利用离子交换技术在所述第一光波导芯部基础上制作出第二光波导芯部。
本实施例方法可以通过步骤401-402制作出一个内侧折射率高于外侧折射率且弯曲的光波导芯部,然后通过重复步骤401-402可以制作出多个内侧折射率高于外侧折射率且弯曲的光波导芯部。当然也可以先制作出多个折射率呈对称分布的第一光波导芯部,然后在多个第一光波导芯部的基础上利用离子扩散原理制作出多个内侧折射率高于外侧折射率且弯曲的光波导芯部。
本实施例方法可以通过两次或者多次离子扩散原理例如离子交换技术
制作出弯曲多模的光波导,所以上述步骤401可以通过一次或者多次扩散原理来形成第一光波导芯部,上述步骤402也可以是通过一次或者多次扩散原理来形成第二光波导芯部;具体次数不受限制,可以根据实际情况而定。
在一具体子实施例中,本实施例方法中所述利用离子扩散原理在所述第一光波导芯部基础上制作出内侧折射率高于外侧折射率且弯曲的第二光波导芯部的步骤包括:
利用离子扩散原理在所述第一光波导芯部基础上制作出内侧掺杂离子浓度高于外侧掺杂离子浓度且弯曲的第二光波导芯部。
也就是说,本实施例方法通过使得光波导芯部内侧掺杂离子浓度高于外侧掺杂离子浓度的方式来使得光波导芯部的内侧折射率高于外侧折射率。
本实施例方法在制作出第一光波导芯部之后,可以通过设计合理的掩膜形状使得可以利用离子交换技术形成光波导横截面掺杂离子浓度分布具有所需非对称的特征。具体地,采用离子交换技术在所述第一光波导芯部基础上制作出折射率呈非对称分布并且弯曲的第二光波导芯部的过程包括:
根据所述第一光波导芯部和待制作的第二光波导芯部的半径在所述基底上设置掩膜形成对应的离子交换窗口,所述离子交换窗口用于在离子交换过程中供掺杂离子扩散进入所述基底;
对所述基底进行离子交换,然后去掩膜得到内侧掺杂离子浓度高于外侧掺杂离子浓度且弯曲的第二光波导芯部。
在一具体子实施例中,在本实施例方法中根据所述第一光波导芯部和待制作的第二光波导芯部的半径在所述基底上设置掩膜形成对应的离子交换窗口的具体过程包括:
当所述第一光波导芯部的半径与待制作的所述第二光波导芯部的半径相等时,在所述基底上设置掩膜形成对应的离子交换窗口,所述离子交换窗口的内边界半径与所述第一光波导芯部的内侧边界半径相等,所述离子交换窗口的外边界半径大于半径所述第一光波导芯部的内侧边界半径小于外侧边界半径;
当所述第一光波导芯部的半径小于待制作的所述第二光波导芯部的半径时,在所述基底上设置掩膜形成对应的离子交换窗口,所述离子交换窗口的内边界半径与所述第一光波导芯部的内侧边界半径相等,所述离子交换窗口的外边界半径与所述第二波导芯部外侧边界半径相等。
通过本实施例的制作方法制成的弯曲多模光波导的折射率分布呈非对称性,减小了弯曲光波导中模式之间的耦合效应,减弱了模式耦合带来的带宽减小和串扰增大给传输系统带来的不利影响。
实施例三:
本实施例以制作半径为5cm(50000μm),宽度为50μm的弯曲多模光波导(即弯曲波导的内侧边界和外侧边界的半径分别为49975μm和50025μm)为例,介绍实施例一所述的制作方法;其中基座为钠钙硅玻璃基片、掺杂离子为银离子;制作这种弯曲多模光波导大致包括如下六个步骤,如图5所示,包括:
(A-B)步骤:光刻与掩膜。准备并清洗玻璃基片4,而后采用热蒸发工艺均匀蒸镀上一层厚度约为200nm-300nm的铝薄膜,并采用标准的微细加工技术(光刻、腐蚀、去胶等)在玻璃基片上制成掩膜7。掩膜7形成的离子交换窗口的内边界和外边界的半径分别为49975μm和50000μm。
(B-C)步骤:第一次离子交换,将带有掩膜7制作好的玻璃基片4放入260℃下融熔的硝酸钠、硝酸钙以及硝酸银的混和熔盐(硝酸钠与硝酸钙按照质量比为420:580:1)中,保温4小时。在此过程中熔盐中的银离子通
过掩膜7形成的离子交换窗口扩散进入玻璃基片4,形成对称光波导芯部5。取出玻璃基片4,冷却至室温,清洗。
(C-D)步骤:掩膜7去除。用化学腐蚀的方法去除玻璃基片4表面的掩膜7。
(D-E)步骤:采用电子束蒸发工艺均匀蒸镀上一层厚度约为200nm-300nm的薄膜,并采用标准的微细加工技术(光刻、腐蚀、去胶等)在玻璃基片4上制作掩膜7。掩膜7形成的离子交换窗口的内边界和外边界的半径分别为49975μm和50025μm。
(E-F)步骤:第二次离子交换,将掩膜7制作好的玻璃基片7放入260℃下融熔的硝酸钠、硝酸钙以及硝酸银的混和溶盐(硝酸钠与硝酸钙按照质量比为420:580:1)中,保温4小时。在此过程中熔盐中的银离子通过掩膜7形成的离子交换窗口扩散进入玻璃基片4,对称光波导芯部5变成非对称光波导芯部6。取出玻璃基片4,冷却至室温,清洗。取出玻璃基片4,冷却至室温,清洗。
(F-G)步骤:掩膜7去除。用化学腐蚀的方法去除玻璃基片4表面的掩膜7。
实施例四:
本实施例以制作半径为5cm(50000μm),宽度为50μm的弯曲多模光波导(即弯曲波导的内侧边界和外侧边界的半径分别为49975μm和50025μm)为例,来介绍上述实施例一所述的制作方法。其中,基底为钠钙硅玻璃基片、掺杂离子为银离子、这种光波导的大体分如下六步(参见图6,A-B,B-C,C-D,D-E,E-F,F-G)进行:
(A-B)步骤:光刻与掩膜。准备并清洗玻璃基片4,而后采用热蒸发工艺均匀蒸镀上一层厚度约为200nm-300nm的铝薄膜,并采用标准的微细加工技术(光刻、腐蚀、去胶等)在玻璃基片上制成掩膜7。掩膜7形成的
离子交换窗口的内边界和外边界的半径分别为49975μm和50025μm。
(B-C)步骤:第一次离子交换,将带有掩膜7制作好的玻璃基片4放入260℃下融熔的硝酸钠、硝酸钙以及硝酸银的混和熔盐(硝酸钠与硝酸钙按照质量比为420:580:1)中,保温4小时。在此过程中熔盐中的银离子通过掩膜7形成的离子交换窗口扩散进入玻璃基片4,形成对称光波导芯部5。取出玻璃基片4,冷却至室温,清洗。
(C-D)步骤:掩膜7去除。用化学腐蚀的方法去除玻璃基片4表面的掩膜7。
(D-E)步骤:采用电子束蒸发工艺均匀蒸镀上一层厚度约为200nm-300nm的薄膜,并采用标准的微细加工技术(光刻、腐蚀、去胶等)在玻璃基片4上制作掩膜7。掩膜7形成的离子交换窗口的内边界和外边界的半径分别为49975μm和50000μm。
(E-F)步骤:第二次离子交换,将掩膜7制作好的玻璃基片7放入260℃下融熔的硝酸钠、硝酸钙以及硝酸银的混和溶盐(硝酸钠与硝酸钙按照质量比为420:580:1)中,保温4小时。在此过程中熔盐中的银离子通过掩膜7形成的离子交换窗口扩散进入玻璃基片4,对称光波导芯部5变成非对称光波导芯部6。取出玻璃基片4,冷却至室温,清洗。取出玻璃基片4,冷却至室温,清洗。
(F-G)步骤:掩膜7去除。用化学腐蚀的方法去除玻璃基片4表面的掩膜7。
实施例五:
本实施例以制作半径为5cm(50000μm),宽度为50μm的多模光波导(即弯曲波导的内侧边界和外侧边界的半径分别为49975μm和50025μm)为例,介绍上述实施例一的制作方法,其中基底为钠钙硅玻璃基片、掺杂离子为钾离子。这种光波导的大体分如下六步(类似参见图5,A-B,B-C,
C-D,D-E,E-F,F-G)进行。
(A-B)步骤:光刻与掩膜。准备并清洗玻璃基片4,而后采用热蒸发工艺均匀蒸镀上一层厚度约为200nm-300nm的铝薄膜,并采用标准的微细加工技术(光刻、腐蚀、去胶等)在玻璃基片上制成掩膜7。掩膜7形成的离子交换窗口的内边界和外边界的半径分别为49975μm和50000μm。
(B-C)步骤:第一次离子交换,将带有掩膜7制作好的玻璃基片4放入400℃下融熔的硝酸钾熔盐中,保温4小时。在此过程中熔盐中的钾离子通过掩膜7形成的离子交换窗口扩散进入玻璃基片4,形成对称光波导芯部5。取出玻璃基片4,冷却至室温,清洗。
(C-D)步骤:掩膜7去除。用化学腐蚀的方法去除玻璃基片4表面的掩膜7。
(D-E)步骤:采用电子束蒸发工艺均匀蒸镀上一层厚度约为200nm-300nm的薄膜,并采用标准的微细加工技术(光刻、腐蚀、去胶等)在玻璃基片4上制作掩膜7。掩膜7形成的离子交换窗口的内边界和外边界的半径分别为49975μm和50025μm。
(E-F)步骤:第二次离子交换,将掩膜7制作好的玻璃基片7放入260℃下融熔的硝酸钾熔盐中,保温4小时。在此过程中熔盐中的钾离子通过掩膜7形成的离子交换窗口扩散进入玻璃基片4,对称光波导芯部5变成非对称光波导芯部6。取出玻璃基片4,冷却至室温,清洗。取出玻璃基片4,冷却至室温,清洗。
(F-G)步骤:掩膜7去除。用化学腐蚀的方法去除玻璃基片4表面的掩膜7。
实施例六:
本实施例同样以制作半径为5cm(50000μm),宽度为50μm的多模光波导(即弯曲波导的内侧边界和外侧边界的半径分别为49975μm和
50025μm)为例,介绍实施例一所述的方法,但其中基底为钠钙硅玻璃基片、掺杂离子为钾离子。这种光波导的大体分如下六步(参见图6,A-B,B-C,C-D,D-E,E-F,F-G)进行。
(A-B)步骤:光刻与掩膜。准备并清洗玻璃基片4,而后采用热蒸发工艺均匀蒸镀上一层厚度约为200nm-300nm的铝薄膜,并采用标准的微细加工技术(光刻、腐蚀、去胶等)在玻璃基片上制成掩膜7。掩膜7形成的离子交换窗口的内边界和外边界的半径分别为49975μm和50025μm。
(B-C)步骤:第一次离子交换,将带有掩膜7制作好的玻璃基片4放入400℃下融熔的硝酸钾熔盐中,保温4小时。在此过程中熔盐中的钾离子通过掩膜7形成的离子交换窗口扩散进入玻璃基片4,形成对称光波导芯部5。取出玻璃基片4,冷却至室温,清洗。
(C-D)步骤:掩膜7去除。用化学腐蚀的方法去除玻璃基片4表面的掩膜7。
(D-E)步骤:采用电子束蒸发工艺均匀蒸镀上一层厚度约为200nm-300nm的薄膜,并采用标准的微细加工技术(光刻、腐蚀、去胶等)在玻璃基片4上制作掩膜7。掩膜7形成的离子交换窗口的内边界和外边界的半径分别为49975μm和50000μm。
(E-F)步骤:第二次离子交换,将掩膜7制作好的玻璃基片7放入260℃下融熔的硝酸钾熔盐中,保温4小时。在此过程中熔盐中的钾离子通过掩膜7形成的离子交换窗口扩散进入玻璃基片4,对称光波导芯部5变成非对称光波导芯部6。取出玻璃基片4,冷却至室温,清洗。取出玻璃基片4,冷却至室温,清洗。
(F-G)步骤:掩膜7去除。用化学腐蚀的方法去除玻璃基片4表面的掩膜7。
以上内容是结合具体的实施方式对本发明所作的进一步详细说明,不
能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本发明的保护范围。
本发明实施例中,弯曲多模光波导,包括:至少一个弯曲的光波导芯部;所述光波导芯部为在基底上利用离子扩散原理形成的光波导芯部,且所述光波导芯部的内侧折射率高于外侧折射率;由于光波导芯部折射率分布具有非对称的特征,即内侧折射率高于外侧折射率的特征;这种非对称的折射率分布带来的模场(向光波导芯部曲率中心方向的)偏移效应与光波导芯部弯曲带来的模场(远离光波导芯部曲率中心方向)偏移效应完全或部分抵消,从而减小或消除多模弯曲波导中的模式耦合效应。
Claims (11)
- 一种弯曲多模光波导,所述弯曲多模光波导包括:至少一个弯曲的光波导芯部;所述光波导芯部为在基底上利用离子扩散原理形成的光波导芯部,且所述光波导芯部的内侧折射率高于外侧折射率。
- 如权利要求1所述的弯曲多模光波导,其中,包括多个所述弯曲的光波导芯部;所述多个弯曲的光波导芯部依次相连。
- 如权利要求1所述的弯曲多模光波导,其中,所述光波导芯部的内侧掺杂离子浓度高于外侧掺杂离子浓度,其中内侧掺杂离子浓度高于外侧掺杂离子浓度实现了内侧折射率高于外侧折射率。
- 如权利要求1至3任一项所述的弯曲多模光波导,其中,所述光波导芯部为在玻璃基底上利用离子扩散原理形成的光波导芯部。
- 一种弯曲多模光波导的制作方法,所述方法包括:利用离子扩散原理在基底上制作至少一个内侧折射率高于外侧折射率且弯曲的光波导芯部。
- 如权利要求5所述的方法,其中,利用离子扩散原理在基底上制作所述光波导芯部的过程包括:利用离子扩散原理在所述基底上制作折射率呈对称分布并且弯曲的第一光波导芯部;利用离子扩散原理在所述第一光波导芯部基础上制作出内侧折射率高于外侧折射率且弯曲的第二光波导芯部。
- 如权利要求6所述的方法,其中,所述利用离子扩散原理在所述第一光波导芯部基础上制作出内侧折射率高于外侧折射率且弯曲的第二光波导芯部的步骤包括:利用离子扩散原理在所述第一光波导芯部基础上制作出内侧掺杂离子浓度高于外侧掺杂离子浓度且弯曲的第二光波导芯部。
- 如权利要求7所述的方法,其中,所述利用离子扩散原理在所述第一光波导芯部基础上制作出内侧掺杂离子浓度高于外侧掺杂离子浓度且弯曲的第二光波导芯部的步骤包括:根据所述第一光波导芯部和待制作的第二光波导芯部的半径在所述基底上设置掩膜形成对应的离子交换窗口,所述离子交换窗口用于在离子交换过程中供掺杂离子扩散进入所述基底;对所述基底进行离子交换,然后去掩膜得到内侧掺杂离子浓度高于外侧掺杂离子浓度且弯曲的第二光波导芯部。
- 如权利要求8所述的方法,其中,所述根据所述第一光波导芯部和待制作的第二光波导芯部的半径在所述基底上设置掩膜形成对应的离子交换窗口的步骤包括:当所述第一光波导芯部的半径与待制作的所述第二光波导芯部的半径相等时,在所述基底上设置掩膜形成对应的离子交换窗口,所述离子交换窗口的内边界半径与所述第一光波导芯部的内侧边界半径相等,所述离子交换窗口的外边界半径大于半径所述第一光波导芯部的内侧边界半径小于外侧边界半径;当所述第一光波导芯部的半径小于待制作的所述第二光波导芯部的半径时,在所述基底上设置掩膜形成对应的离子交换窗口,所述离子交换窗口的内边界半径与所述第一光波导芯部的内侧边界半径相等,所述离子交换窗口的外边界半径与所述第二波导芯部外侧边界半径相等。
- 如权利要求5至9任一项所述的方法,其中,所述基底包括玻璃基底。
- 如权利要求7至9任一项所述的方法,其中,所述掺杂离子包括银离子、钾离子、铷离子或者铯离子。
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US10690858B2 (en) | 2018-02-28 | 2020-06-23 | Corning Incorporated | Evanescent optical couplers employing polymer-clad fibers and tapered ion-exchanged optical waveguides |
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