WO2016043842A1 - Common-gate amplifier for high-speed dc-coupling communications - Google Patents

Common-gate amplifier for high-speed dc-coupling communications Download PDF

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Publication number
WO2016043842A1
WO2016043842A1 PCT/US2015/041506 US2015041506W WO2016043842A1 WO 2016043842 A1 WO2016043842 A1 WO 2016043842A1 US 2015041506 W US2015041506 W US 2015041506W WO 2016043842 A1 WO2016043842 A1 WO 2016043842A1
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WO
WIPO (PCT)
Prior art keywords
voltage
differential
input
common
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2015/041506
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English (en)
French (fr)
Inventor
Miao Li
Li Sun
Zhi Zhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
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Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Priority to JP2017514324A priority Critical patent/JP2017529791A/ja
Priority to EP15744456.3A priority patent/EP3195472A1/en
Priority to CN201580048183.7A priority patent/CN106688178B/zh
Publication of WO2016043842A1 publication Critical patent/WO2016043842A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
    • H03F3/45663—Measuring at the active amplifying circuit of the differential amplifier
    • H03F3/45677—Controlling the active amplifying circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45695—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedforward means
    • H03F3/45699—Measuring at the input circuit of the differential amplifier
    • H03F3/45713—Controlling the active amplifying circuit of the differential amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00—Baseband systems
    • H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
    • H04L25/0264—Arrangements for coupling to transmission lines
    • H04L25/0272—Arrangements for coupling to multiple lines, e.g. for differential transmission
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/129—Indexing scheme relating to amplifiers there being a feedback over the complete amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/255—Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/36—Indexing scheme relating to amplifiers the amplifier comprising means for increasing the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45008—Indexing scheme relating to differential amplifiers the addition of two signals being made by a resistor addition circuit for producing the common mode signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45078—Indexing scheme relating to differential amplifiers the common mode signal being taken or deducted from the one or more inputs of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45112—Indexing scheme relating to differential amplifiers the biasing of the differential amplifier being controlled from the input or the output signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45302—Indexing scheme relating to differential amplifiers the common gate stage of a cascode dif amp being controlled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45306—Indexing scheme relating to differential amplifiers the common gate stage implemented as dif amp eventually for cascode dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45418—Indexing scheme relating to differential amplifiers the CMCL comprising a resistor addition circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45422—Indexing scheme relating to differential amplifiers the CMCL comprising one or more capacitors not as integrating capacitor, e.g. for stability purposes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45424—Indexing scheme relating to differential amplifiers the CMCL comprising a comparator circuit

Definitions

  • a second aspect relates to a method for operating a differential common-gate amplifier having a differential input and a differential output, wherein the differential input comprises a first input and a second input.
  • FIG. 8 shows an example of a primary electrostatic discharge (ESD) protection circuit according embodiment of the present disclosure.
  • the differential common-gate amplifier 310 amplifies the differential signal at the differential input (inp,inn) into an amplified differential signal at the differential output (outp,outn) using the first and second amplifiers 330 and 340.
  • the differential common-gate amplifier 310 may provide a low- frequency gain of between 6 and 8 dB or another gain, as discussed further below.
  • the differential common-gate amplifier 310 alleviates the need for CDM ESD protection compared to a CML differential amplifier. This is because the incoming differential signal is input to the sources/drains of the transistors 332, 334 342 and 344 in the common-gate amplifier 310 instead of the gates of the transistors.
  • the drains/sources of the transistors typically do not require by-pass diodes for CDM ESD protection, and therefore avoid the bandwidth reduction caused by the by-pass diodes discussed above.
  • the common-mode feedback circuit 350 provides the first bias voltage vbnl to the gates of the first and third transistors 332 and 342.
  • the common-mode feedback circuit 350 senses the common-mode voltage of the input differential signal, and adjusts the first bias voltage vbnl based on the sensed input common-mode voltage such that the DC voltages at the inputs (inp,inn) of the differential amplifier 310 are approximately equal to the input common-mode voltage. This prevents DC current leakage from the inputs (inp,inn) of the amplifier 310. DC current leakage is undesirable because it can lead to relatively large variations in the input common-mode voltage.
  • the common-mode feedback circuit 350 also provides the second bias voltage vbn2 to the gates of the third and fourth transistors 334 and 344.
  • FIG. 4 shows an exemplary implementation of the common-mode feedback circuit 350 according to an embodiment of the present disclosure.
  • the common-mode feedback circuit 350 comprises a comparator 430, a current source 410, and a replica circuit 420.
  • the comparator 430 may comprise an operational amplifier.
  • the gate of the sixth transistor 450 is coupled to the drain of the fifth transistor 435, and the source of the sixth transistor 450 is coupled to ground.
  • the gate of the sixth transistor 450 is also coupled to the gate of the second transistor 334 in the first amplifier 330 and to the gate of the fourth transistor 344 in the second amplifier 340.
  • the second, fourth and sixth transistors 334, 344 and 450 form a current mirror, in which the second and fourth transistors 334 and 344 mirror the current flowing though the sixth transistor 450. Since the current flowing through the sixth transistor 450 is approximately equal to the current provided by the current source 410, each of the second and fourth transistors 334 and 344 mirrors the current of the current source 410.
  • the comparator 430 compares the difference between vl and vcm, and adjusts the first bias voltage vbnl output by the comparator 430 based on the comparison in a direction that minimizes the difference between vl and vcm. In other words, the comparator 430 adjusts the first bias voltage vbnl until the replica voltage vl approximately equals the input common-mode voltage vcm. As a result, the replica voltage vl tracks the input common-mode voltage vcm.
  • the first input (inp) of the differential amplifier 510 is coupled between the first and second resistors 336 and 338 of each slice 330(l)-330(n) and the first output (outp) of the differential amplifier 510 is coupled to the drain of the first transistor 332 of each slice 330(l)-330(n).
  • the source of the second transistor 334 of each slice 330(l)-330(n) is coupled to ground.
  • the second input (inn) of the differential amplifier 510 is coupled between the third and fourth resistors 346 and 348 of each slice 340(1 )-340(n) and the second output (outn) of the differential amplifier 510 is coupled to the drain of the third transistor 342 of each slice 340(l)-340(n).
  • the source of the fourth transistor 344 of each slice 340(l)-340(n) is coupled to ground.
  • Vout_cm Vdd - n-I b -RL (2)
  • the input resistance looking into first set of slices 330(l)-330(n) may be approximately given by:
  • Equation (4) assumes that the second set of slices 340(1 )-340(4) has substantially the same structure as the first set of slices 330(l)-330(4).
  • FIG. 6 shows the receiver 605 and the differential common-gate amplifier 610 according to another embodiment of the present disclosure, in which first and second shunt capacitors 612 and 615 are used to extend the bandwidth of the amplifier 610, as discussed further below.
  • the ninth resistor 630 has a resistance of R LI and the tenth resistor 635 has a resistance of R L2 , in which the sum of the resistances of the ninth and tenth resistors 630 and 635 is approximately equal to the resistance R L of the second load resistor 365.
  • FIG. 7 is a plot showing an example of the gain 710 of the common-gate amplifier over frequency without the shunt capacitors 612 and 615, and an example of the gain 720 of the common-gate amplifier over frequency with the shunt capacitors 612 and 615.
  • the capacitance CO is equal to 400 fF
  • the resistance R LI is equal to 1.2 ⁇
  • the resistance R L2 is equal to 300 ⁇ .
  • the gain 710 without the shunt capacitors 612 and 615 rolls off at a lower frequency compared to the gain 720 with the shunt capacitors 612 and 615.
  • the shunt capacitors 610 and 612 add a zero to the frequency response of the amplifier that causes the gain to bend up, and therefore extend the bandwidth of the amplifier.
  • the bandwidth of the amplifier with the shunt capacitors is approximately 4.5 GHz, where the bandwidth is defined by the frequency at which the gain of the amplifier decreases by one dB from the low frequency gain of the amplifier.
  • the low frequency gain may be estimated from equation (4) above.
  • the ESD diodes 812, 820, 815, 820 and 825 protect the receiver 605 from ESD by shunting ESD currents to the power rail or ground.
  • the ESD circuit 810 may also be used to provide ESD protection for other circuits on the same chip as the receiver 605.
  • step 930 the sensed common-mode voltage is compared with the replica voltage.
  • the replica voltage may be compared with the common-mode voltage using a comparator (e.g., comparator 430).
  • a comparator e.g., comparator 430
  • a first bias voltage input to the differential common-gate amplifier is adjusted based on the comparison, wherein the DC voltage depends on the first bias voltage.
  • the first bias voltage may be adjusted in a direction that reduces a difference between the replica voltage and the common-mode voltage.
  • the replica voltage may be approximately equal to the DC voltage.
  • circuits described herein may be realized using a variety of transistor types, and are therefore not limited to the particular transistor types shown in the figures.
  • transistor types such as bipolar junction transistors, junction field effect transistor or any other transistor type may be used.
  • circuits described herein may be fabricated with various IC process technologies such as CMOS, bipolar junction transistor (BJT), bipolar-CMOS (BiCMOS), silicon germanium (SiGe), gallium arsenide (GaAs), etc.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Amplifiers (AREA)
PCT/US2015/041506 2014-09-15 2015-07-22 Common-gate amplifier for high-speed dc-coupling communications Ceased WO2016043842A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017514324A JP2017529791A (ja) 2014-09-15 2015-07-22 高速ｄｃ結合通信のための共通ゲート増幅器
EP15744456.3A EP3195472A1 (en) 2014-09-15 2015-07-22 Common-gate amplifier for high-speed dc-coupling communications
CN201580048183.7A CN106688178B (zh) 2014-09-15 2015-07-22 用于高速dc耦合通信的共栅放大器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/486,885 2014-09-15
US14/486,885 US9438188B2 (en) 2014-09-15 2014-09-15 Common-gate amplifier for high-speed DC-coupling communications

Publications (1)

Publication Number Publication Date
WO2016043842A1 true WO2016043842A1 (en) 2016-03-24

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PCT/US2015/041506 Ceased WO2016043842A1 (en) 2014-09-15 2015-07-22 Common-gate amplifier for high-speed dc-coupling communications

Country Status (5)

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US (1) US9438188B2 (enExample)
EP (1) EP3195472A1 (enExample)
JP (1) JP2017529791A (enExample)
CN (1) CN106688178B (enExample)
WO (1) WO2016043842A1 (enExample)

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US20160079942A1 (en) 2016-03-17
CN106688178A (zh) 2017-05-17
CN106688178B (zh) 2019-04-05
JP2017529791A (ja) 2017-10-05
US9438188B2 (en) 2016-09-06
EP3195472A1 (en) 2017-07-26

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