WO2016041218A1 - 一种外腔可调谐激光器以及其腔模锁定方法 - Google Patents

一种外腔可调谐激光器以及其腔模锁定方法 Download PDF

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WO2016041218A1
WO2016041218A1 PCT/CN2014/087485 CN2014087485W WO2016041218A1 WO 2016041218 A1 WO2016041218 A1 WO 2016041218A1 CN 2014087485 W CN2014087485 W CN 2014087485W WO 2016041218 A1 WO2016041218 A1 WO 2016041218A1
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optical
cavity
phase
external cavity
control unit
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PCT/CN2014/087485
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English (en)
French (fr)
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汤学胜
傅焰峰
钱坤
罗勇
陈义宗
张玓
胡强高
唐毅
罗超
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武汉光迅科技股份有限公司
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Publication of WO2016041218A1 publication Critical patent/WO2016041218A1/zh
Priority to US15/460,956 priority Critical patent/US10050406B2/en

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    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/1305—Feedback control systems
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/1067—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using pressure or deformation
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
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    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06837—Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/1307—Stabilisation of the phase
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens

Definitions

  • the present invention relates to a mode locking method for an external cavity tunable laser, and more particularly to a method and apparatus for implementing longitudinal mode locking of an external cavity tunable laser.
  • An external cavity tunable laser for longitudinal mode locking using the inventive method and apparatus is applicable to optical communication networks of flexible wavelength grids, and the present invention is in the field of communications.
  • Tunable lasers have been widely used in the field of optical communication. Especially in recent years, with the development of high-speed optical communication network technology, the demand for narrow linewidth tunable lasers is increasing. Tunable lasers are the future optical communication networks. The important role. Structurally, tunable lasers can be divided into monolithic integrated tunable lasers and external cavity tunable lasers.
  • the monolithic integrated tunable laser has the advantages of small size and good stability, but its current linewidth is wider than that of the external cavity tunable laser, and is not suitable for the development trend of high-speed optical communication.
  • the external cavity tunable laser has the advantages of narrow line width, large tuning range and low technical difficulty.
  • the external cavity tunable laser occupies a large share.
  • its stability is poor, and it is easily interfered by various external factors to cause mode hopping, which leads to deterioration of the characteristics of the laser, affecting the transmission performance of the system, and suppressing the mode hopping is an external cavity tunable laser.
  • a major task that must be addressed during use, external cavity tunable laser status monitoring and online adjustment is a very important task.
  • the current proposed techniques for suppressing the mode hopping to achieve wavelength locking are numerous, and are summarized as monitoring and compensation techniques for amplitude or phase condition deviation.
  • the most common technical solution is to determine the longitudinal mode output frequency by using the power maximal algorithm or the local specific slope of the optical power spectrum.
  • the phase tuning element in the external cavity is used to fine tune the longitudinal mode output frequency to lock the cavity mode.
  • the phase-adjusting component in order to ensure the stability of the tunable laser for long-term operation, the phase-adjusting component must ensure a fast response speed and a large phase-adjustable range. It is often difficult for a phase-adjusting component to meet these two requirements, so a fast response
  • the combination of the phase modulation element and a phase modulation element with a large phase tuning range is the best choice.
  • the external cavity tunable laser has an obvious shortcoming, and it is easy to be affected by various factors to cause mode hopping, which leads to deterioration of the characteristics of the laser. Suppressing the mode hopping is a complicated technology that must be solved in the process of using the external cavity tunable laser.
  • a variety of techniques for suppressing the mode-hopping of wavelength-locking proposed by external cavity tunable lasers with different structures are summarized as monitoring and compensation techniques for amplitude or phase condition deviation. Therefore, external cavity tunable laser status monitoring and online adjustment is a very important task.
  • the object of the present invention overcomes the technical deficiencies of the prior art, and the present invention is directed to monitoring and external cavity mode of an external cavity laser.
  • Cavity phase compensation technology an external cavity tunable laser and its cavity mode locking method are proposed.
  • the main controller of the laser monitors the small change of the output optical frequency of the laser by reading the optical power of the optical power detecting device, and takes the real-time effective.
  • the external cavity phase mixing compensation mode realizes the stability of the cavity mode of the laser and the precise control of the wavelength.
  • An external cavity tunable laser comprising a semiconductor optical amplifier for providing a gain, wherein a surface of each surface of the semiconductor optical amplifier is respectively plated with a partial reflection film and an anti-reflection film, and the outer cavity of the external cavity tunable laser is disposed in the antireflection
  • the outer cavity comprises a beam expanding collimating lens, an outer cavity mirror; a beam expanding collimating lens, a tunable filter disposed between the outer cavity mirrors, and a fixed grid filter, the outer cavity tunable laser
  • the outer cavity further includes a large phase adjustment component and a phase fast adjustment component; the large phase adjustment component is capable of extensively adjusting a cavity length of an outer cavity of the outer cavity tunable laser; the phase fast adjustment component is capable of The cavity length of the outer cavity of the external cavity tunable laser is rapidly adjusted; the large phase adjustment component, the phase fast adjustment component, the tunable filter, and the semiconductor optical amplifier are connected to the control unit.
  • the phase fast adjustment component includes a displacement control component fixed to the mirror surface of the reflector and capable of driving the mirror mirror to move minutely in a direction perpendicular to the mirror surface of the reflector.
  • the large phase adjustment component is disposed at any position of the optical path between the expanded beam collimating lens and the outer cavity mirror in the outer cavity; the large phase adjustment component includes one or more controlled optical components, the controlled optics
  • the assembly is capable of varying the optical cavity length of the outer cavity of the control laser by varying the refractive index and/or thickness of the controlled optical component under the control of the control unit.
  • the controlled optical component is a thermo-optic-based temperature-adjustable thermo-optical component or an electro-optical effect-based drive voltage-adjustable optical component or an electro-optical effect-based drive current-adjustable optical component.
  • the temperature-adjustable thermo-optic component based on the thermo-optic effect is composed of a silicon wafer coated with an anti-reflection coating on the light-passing surface, a heating resistor sheet and a temperature sensor, and the heating resistor sheet and the temperature sensor are respectively bonded to the front and rear light-passing surfaces of the silicon wafer.
  • the control unit is connected to the heating resistor piece and the temperature sensor to realize temperature closed-loop control of the silicon wafer.
  • the optical component with adjustable driving voltage based on electro-optical effect or the optical component with adjustable driving current based on electro-optic effect adopts a phase-adjustable liquid crystal film with an antireflection film on the light-passing surface, and the control unit controls the loading voltage of the liquid crystal film. Or current, causing the optical axis of the liquid crystal to rotate, changing the refractive index of the liquid crystal film to change the optical path.
  • the temperature-adjustable thermo-optic component based on the thermo-optic effect is composed of a substrate, a semiconductor refrigerating sheet, and a temperature sensor.
  • the temperature sensor is disposed on the substrate, and a semiconductor refrigerating sheet is disposed under the substrate, and the semiconductor refrigerating sheet and the temperature sensor are connected to the control unit.
  • the large phase adjustment component is composed of a substrate, a semiconductor refrigeration chip, and a temperature sensor.
  • the temperature sensor is disposed on the substrate, and a semiconductor refrigeration chip is disposed under the substrate, and the semiconductor refrigeration chip and the temperature sensor are connected to the control unit.
  • the phase fast adjustment assembly uses a piezoelectric ceramic.
  • One side of the partial reflection film of the semiconductor optical amplifier is a coupling output end of the external cavity laser, and a first output beam collimating lens, an optical beam splitter, an isolator, a second output beam collimating lens, and light are sequentially disposed.
  • the power detecting device corresponds to another splitting optical path of the optical beam splitter, and the optical power detecting device is connected to the control unit.
  • a cavity mode locking method for an external cavity tunable laser comprises the following specific steps: Step 601: After the control unit of the laser receives the command to switch the optical channel, the control unit drives the tunable filter to the specified filter according to the switched optical channel calibration data. Parameter, the control unit drives the large phase adjustment component to gradually change the phase in one phase period until the optical power output by the optical power detecting device reaches a maximum value, and the control unit records the maximum optical power acquisition value P1 Max , and the laser completes the optical channel switching to realize The wavelength is accurately outputted, and then enters the following locking phase of the continuous cavity mode; step 602: the optical power detecting device continuously collects the output optical power, and the control unit calculates the current optical power sampling value and the maximum optical power acquisition value P1 in the previous wavelength locking state.
  • step 603 determining whether the sampling power difference exceeds the set threshold, if the threshold is exceeded, proceeding to step 604;
  • Step 604 The control unit records the current driving input value Df and the large phase adjustment of the phase fast adjustment component
  • the component currently drives the input value D L , the control unit starts the phase Bit fast adjustment component compensation phase:
  • the drive input is rapidly changed by D f - ⁇ to D f + ⁇ according to the set step size.
  • the phase fast adjustment component drives the reflection cavity mirror to move rapidly in one direction perpendicular to the mirror surface of the reflection cavity, and the optical power
  • Step 605 The control unit sets the phase fast adjustment component drive input to D f , setting the large phase adjusting drive input component (D L + ⁇ D L) , a laser cavity mode locking operation is completed, the first locking stage into the mold cavity; step
  • the calibration method for obtaining the K value is: gradually adjusting the input of the phase fast adjustment component, driving the external cavity mirror to adjust the cavity length, and monitoring the change of the laser output light frequency, obtaining the phase fast adjustment component loading voltage x p and the laser output.
  • the numerical relationship between the optical frequencies y p and linear fitting: y p k 1 x p +b 1 ; adjust the input of the large phase adjustment component, monitor the change of the laser output optical frequency, and obtain the large phase adjustment component input change x b
  • the outer cavity of the product of the invention comprises a plurality of (at least 2) active phase adjustment components, wherein one compensator can realize fast phase compensation for detecting the phase real-time compensation amount of the external cavity, and other phase compensators use Real-time phase compensation.
  • the presence of multiple phase compensators in the external cavity increases the phase compensation speed and greatly increases the external cavity phase compensation amount, which is beneficial to the fast real-time locking of the laser cavity mode and the long-term stable frequency operation of the laser under different working environments. ;
  • the device for realizing wavelength locking of the present invention has a simple structure and high wavelength locking precision.
  • the main controller of the laser samples the output optical power through the optical power detecting device, monitors the small change of the output optical frequency of the laser, and adopts a real-time effective external cavity phase hybrid compensation method to achieve stable laser cavity mode and precise wavelength control.
  • FIG. 1 is a schematic view showing an embodiment of an first embodiment of an exceptional cavity tunable laser and a wavelength locking device of the present invention
  • FIG. 2 is a schematic view showing an embodiment of a second embodiment of the invention for an exceptional cavity tunable laser and a wavelength locking device
  • FIG. 3 is a schematic view showing an embodiment of a third embodiment of the invention for an exceptional cavity tunable laser and a wavelength locking device
  • FIG. 4 is a schematic view showing a transmission spectrum and a cavity mode of a tunable filter member and a periodic grid filter member in the external cavity tunable laser of the present invention
  • FIG. 5 is a graph showing a relationship between a piezoelectric ceramic loading voltage and a laser output optical frequency of a fast phase compensator according to an embodiment of the present invention
  • FIG. 6 is a flow chart of a cavity mode locking method of an external cavity tunable laser according to an embodiment of the present invention
  • Figure 7 is a typical relationship between the laser output optical frequency and the sampled optical power and the phase change of the external cavity
  • Phase fast adjustment component 8. First output beam collimating lens;
  • optical isolator 11, optical isolator; 12, optical power detection device;
  • Control unit 14. Output fiber;
  • External cavity tunable lasers have many resonant cavity modes, so that they can work in a single mode by adding a narrowband filter into the cavity, while the external cavity tunable laser is implemented by an intracavity adjustable narrowband filter.
  • the first implementation device of the external cavity tunable laser according to the present invention is as shown in FIG. 1 , and includes a coupled output optical path, a light splitting component, an optical power detecting device, and an external cavity tunable laser, wherein a plurality of active devices in the external cavity are provided.
  • the phase adjustment component comprises a semiconductor optical amplifier 1, a beam expander collimator lens 2, a tunable filter 3, a fixed grid filter 4, a large phase adjustment component 5, an external cavity mirror 6, and a phase fast adjustment component 7,
  • the semiconductor optical amplifier 1 is used to provide a gain, and both end faces are respectively plated with a partial reflection film and an antireflection film.
  • the beam expanding collimating lens 2, the tunable filter 3, the fixed grid filter 4, the large phase adjusting component 5 and the outer cavity mirror 6, and the phase fast adjusting component 7 are sequentially disposed on the semiconductor optical amplifier 1 coated with an antireflection film.
  • One On the side, the outer cavity constituting the outer cavity tunable laser, the outer cavity component of the entire laser and the temperature sensor 15 are disposed on the substrate 16, and a semiconductor refrigeration fin 17 is disposed under the substrate.
  • the semiconductor refrigerating sheet 17 and the temperature sensor 15 are connected to the control unit 13 of the system, as shown in FIG.
  • the first output beam collimating lens 8, the optical beam splitter 10, the isolator 11, the second output beam collimating lens 9, and the output fiber 14 are disposed on a side of the semiconductor optical amplifier 1 plated with a partially reflective film to form the outer cavity.
  • a coupled output optical path of a tunable laser The optical beam splitter 10 divides the output laser into two parts, wherein a small portion of the optical power is divided into the optical power detecting device 12, and the circuit is amplified for the control unit 13 to periodically sample the power outside the cavity; the other portion of the output laser is optically isolated.
  • the device 11 is finally coupled into the output fiber 14 via a second output beam collimating lens 9.
  • the control unit 13 of the entire system includes a reading module connected to the optical power detecting device 12, an arithmetic module connected to the reading module, and an arithmetic module, a large phase adjusting component 5, a phase fast adjusting component 7, and a tunable filtering.
  • the drive module connected to the device 3 and the external cavity temperature control module connected to the semiconductor refrigeration fin 17 and the temperature sensor 15.
  • the tunable filter 3, the fixed grid filter 4, and the large phase adjustment unit 5 may be disposed at any position between the beam expanding collimator lens 2 and the outer cavity mirror 6, and is not limited to the structure of FIG. That is, the outer cavity of the external cavity tunable laser is disposed on one side of the antireflection film, and the outer cavity includes a beam expanding collimating lens 2, an outer cavity mirror 6; a beam expanding collimating lens 2 and an outer cavity mirror 6
  • the tunable filter 3, the fixed grid filter 4, the tunable filter 3, and the fixed grid filter 4 are set to be tuned.
  • the large phase adjustment assembly 5 is disposed at any position of the optical path between the expanded beam collimating lens 2 and the outer cavity mirror 6 in the outer cavity.
  • the current injected into the semiconductor optical amplifier 1 is converted into a wide-band spontaneously radiated photon by electro-optical conversion. These photons propagate along the waveguide to both sides, and a part of the photon of a specific frequency propagates back and forth in the resonant cavity for a plurality of times to satisfy the threshold condition, thereby achieving oscillation amplification. Thereby, a laser light is formed to be emitted from the partially reflective end surface of the semiconductor optical amplifier 1.
  • the fixed grid filter 4 is a Fabry-Perot etalon or other generation periodic grid filter.
  • the period corresponds to The DWDM interval of the standard specified by ITU-T, such as 25 GHz, 50 GHz, 100 GHz or 200 GHz.
  • the active large phase adjustment component 5 and the phase fast adjustment component 7 are both used to change the cavity length of the laser external cavity.
  • the phase fast adjustment component 7 is mainly used for rapid detection of the external cavity phase compensation amount, and the active large phase adjustment component 5 pairs of lasers
  • the cavity length of the external cavity is adjusted to a larger extent, which is the actual execution unit of the external cavity phase compensation.
  • the tunable filter 3, the phase fast adjustment component 7 and the active large phase adjustment component 5 are synchronized to adjust the frequency of the laser.
  • the optimal cavity mode wavelength output of the external cavity tunable laser corresponds to the maximum optical power acquisition detection value, and the change of the optical power sampling detection value reflects a small change of the laser output light frequency.
  • the phase fast adjustment assembly 7 is a displacement control element that is fixed to the outer cavity mirror 6 and causes the outer cavity mirror 6 to make a rapid micro movement in a direction perpendicular to the mirror surface of the reflection cavity.
  • the present invention employs a piezoelectric ceramic (PZT) as the phase fast adjustment component 7 to achieve phase adjustment in a manner that precisely controls the position of the outer cavity mirror 6.
  • the optical power detecting device 12 can simultaneously monitor the change in the output power and frequency of the laser to provide a basis for feedback control of the frequency stabilization system.
  • the external cavity control temperature is constant, and the laser is provided with a discrete large phase adjustment component 5, and the large range of the outer cavity length of the laser is adjusted by the large phase.
  • the adjustment assembly 5 is implemented.
  • the large phase adjustment component 5 can employ a thermo-optic-based temperature-adjustable thermo-optical component or an electro-optical effect-based optical component with adjustable drive voltage or drive current.
  • thermo-optic component can be composed of a silicon wafer with an anti-reflection coating on the light-passing surface, a heating resistor and a temperature sensor, and the heating resistor and the temperature sensor are respectively bonded to the front and rear of the silicon wafer.
  • the non-light-passing area of the surface is connected to the control unit 13 to realize closed-loop temperature control of the silicon wafer.
  • the large phase adjustment component 5 adopting the electro-optic effect can also select a phase-adjustable liquid crystal film with an antireflection film on the light-passing surface, and the control unit 13 rotates the optical axis of the liquid crystal film by controlling the loading voltage of the liquid crystal film to change the liquid crystal.
  • the effective refractive index of the sheet reaches the purpose of changing the optical path.
  • FIG. 2 A second embodiment of the external cavity tunable laser is shown in FIG. 2.
  • the independent active large phase adjustment component is not disposed in the outer cavity of the laser, that is, the large phase adjustment component 5 is removed, from the substrate 16, the semiconductor refrigeration chip 17, and the temperature.
  • the sensor 15 implements the function of the large phase adjustment assembly 5.
  • the semiconductor refrigerating sheet 17 and the temperature sensor 15 are connected to the control unit 13 of the system.
  • the substrate 16 has a thermal expansion and contraction effect, and the control unit 13 changes the temperature of the semiconductor refrigerating sheet 17, and changes the length of the substrate 16 to achieve the purpose of changing the length of the outer cavity.
  • Embodiments of the invention include, but are not limited to, one or two large phase adjustment assemblies 5 that may be combined with at least one or more large phase adjustment components.
  • the phase fast adjustment assembly 7 includes, but is not limited to, piezoelectric ceramics and elements that can be controlled by external control means, including but not limited to optical path effects based on electro-optical effects, thermo-optic effects, and various stress sensing. element.
  • a third embodiment of the external cavity tunable laser is shown in Figure 3.
  • the external cavity control temperature is constant, and the laser is provided with two different discrete first large phase adjustment components 5-1 and a second large phase adjustment component 5- 2.
  • the first large phase adjustment component 5-1 and the second large phase adjustment component 5-2 are combined to form a large phase adjustment phase component.
  • the first large phase adjustment component 5-1 and the second large phase adjustment component 5-2 may employ a thermo-optic-based temperature-adjustable thermo-optical component or an electro-optical effect-based optical component with a drive voltage or drive current adjustable.
  • the first large phase adjustment component 5-1 based on the thermo-optic effect can be composed of a silicon wafer coated with an antireflection film, a heating resistor and a temperature sensor, and the heating resistor and the temperature sensor are respectively bonded to the silicon.
  • the non-light-passing area of the front and rear light-passing surfaces is connected to the control unit 13 to realize closed-loop temperature control of the silicon wafer. By controlling the temperature of the thermal silicon wafer, the optical path of the silicon wafer is changed, thereby changing the cavity length of the external cavity tunable laser and compensating for the cavity mode phase.
  • the second large phase adjustment component 5-2 adopting the electrooptic effect can also select a phase-adjustable liquid crystal film with an antireflection film on the light-passing surface, and the control unit 13 controls the liquid crystal chip to control the optical axis of the liquid crystal film. Rotation, changing the effective refractive index of the liquid crystal sheet to achieve the purpose of changing the optical path.
  • External cavity tunable laser In the optical channel switching phase, the control unit 13 drives the second large phase adjustment component 5-2 to adjust the external cavity length to achieve accurate wavelength output; the continuous cavity mode locking phase, the second large phase adjustment component 5
  • the -2 drive input is unchanged, and the phase fast compensation component and the large phase adjustment component are stabilized by a phase shift amount by a special scaling algorithm.
  • Fig. 4 is a schematic diagram showing the transmission spectra and cavity modes of the tunable filter 3 and the fixed grid filter 4 in the external cavity tunable laser of the present invention.
  • A1 To fix the transmission spectrum of the grid filter 4
  • A2 is the transmission spectrum of the tunable filter 3
  • A4, A5, and A6 are the cavity modes.
  • the tunable laser sets an ITU-T wavelength output, A2 is aligned with a transmission peak of A1, and the combined transmission spectrum of tunable filter 3 and fixed grid filter 4 is A3.
  • the transmittance in A3 is much larger than that of other secondary peaks.
  • the transmission peak is called the transmission main peak.
  • the cavity mode of the external cavity laser is moved by the external cavity phase adjustment mechanism.
  • the cavity mode closest to the transmission main peak in the laser coincides with the main peak of the transmission spectrum of the tunable filter, and the gain amplification in the external cavity is much larger than that of the other cavity modes.
  • the cavity mode closest to the main peak in the laser increases along the direction of the optical frequency (the round-trip optical path of the outer cavity gradually decreases), and then gradually approaches the main peak of the transmission spectrum, and then gradually moves away from the main peak of the transmission spectrum.
  • a typical relationship between the laser output optical frequency and the sampled optical power and the phase change of the external cavity is shown in Figure 5.
  • the phase of the outer cavity along the positive direction of the x-axis gradually decreases, and the optimal cavity mode wavelength output corresponds to the maximum optical power acquisition detection value, and the change of the optical power sampling detection value reflects a small change of the output frequency of the laser.
  • the change value of the laser output light frequency is basically linearly proportional to the phase change of the outer cavity.
  • the cavity mode locking method proposed by the present invention is proposed according to this principle, including an optical channel switching phase and a continuous cavity mode locking phase.
  • the cavity mode locking method of the external cavity tunable laser according to the present invention is illustrated by taking the thermo-optic effect-based temperature-adjustable large phase adjustment component 5 as an example. Show.
  • the specific implementation scheme is as follows:
  • Step 601 The laser control unit 13 receives the switching optical channel command, and the control unit 13 drives the tunable filter 3 according to the switched optical channel calibration data.
  • the control unit 13 gradually reduces the large phase adjustment component 5 according to a predetermined step size and a variable temperature range.
  • the temperature that is, the step-by-step search for the optimal compensation phase in one phase period until the maximum value of the optical power output by the optical power detecting device 12, the control unit 13 records the maximum optical power acquisition value P1 Max , and the laser completes the optical channel switching. Achieve accurate wavelength output, and then enter the locking phase of the continuous cavity mode below;
  • Step 602 The optical power detecting device 12 continuously collects the output optical power, and the control unit 13 calculates a difference between the current optical power sampling value and the maximum optical power collecting value P1 Max in the previous wavelength locking state;
  • Step 603 Determine whether the sampling power difference exceeds a set threshold
  • Step 604 If the threshold is exceeded, the control unit 13 records the current drive input value D f of the phase fast adjustment component 7 and the current drive input value D L of the large phase adjustment component 5, and the control unit 13 activates the phase fast adjustment component 7 to compensate the phase: drive The input is rapidly changed by D f - ⁇ to D f + ⁇ according to the set step size, and the phase fast adjusting component 7 drives the reflecting mirror 6 to move unidirectionally in a direction perpendicular to the mirror surface of the reflecting cavity, and the optical power detecting device 12 synchronously collects each The output optical power of a driving input is used to quickly search for the maximum optical power sampling value P2 Max and its driving input value CD f in the process , the control unit 13 records the optical power acquisition value P2 Max ; and calculates the driving input value CD f and In the wave lock state, the difference between the drive input values D f is used.
  • Step 605 The control unit 13 sets the phase fast adjustment component 7 to drive the input to D f , sets the large phase compensator 5 to drive the input to (DL+ ⁇ DL), and the laser completes a cavity mode locking operation to enter the next cavity mode locking phase;
  • Step 606 Collect the optical power value output by the external optical power detecting device 12, and calculate the difference between the current optical power sampling value and the maximum optical power acquisition value P2 Max in the previous wavelength locking state;
  • the real-time cavity mode locking of the laser can be repeatedly performed, and the external cavity control temperature is constant throughout the process, and the laser stably outputs the wavelength within the required range of the laser.
  • the cavity mode locking method of the external cavity tunable laser described above includes, but is not limited to, the first embodiment of the present invention, and is equally suitable for the second and third embodiments of the present invention.
  • the cavity mode locking method of the external cavity tunable laser is applied to the second embodiment, and all operations of the control unit 13 for the large phase adjustment component 5 are converted into the control unit 13 for all steps of the first embodiment.
  • the semiconductor refrigerating sheet 17 and the temperature sensor 15 constitute a temperature control of the outer chamber temperature control system.
  • the cavity mode locking method of the external cavity tunable laser is applied to the third embodiment: step 601 optical channel switching phase, the control unit 13 drives the first large phase adjustment component 5-2, adjusts the outer cavity length, and realizes the wavelength. Accurate output; step 602-606 continues the cavity mode locking frequency stabilization phase, the second large phase adjustment component 5-2 drives the input unchanged, and the phase fast adjustment component 7 and the first large phase adjustment component 5-1 implement each other The phase compensation amount is switched.
  • the active phase compensation mechanism is activated; the sampling power is changed.
  • the threshold value of the value depends on the wavelength accuracy required by the laser index, that is, the sampling power variation value is within the threshold, and the output wavelength of the laser meets the wavelength accuracy required by the index; the maximum optical power acquisition value for comparison before the next wavelength lock start is taken. The maximum optical power acquisition value in the previous wavelength lock state.
  • the main idea of the cavity mode locking method of the present invention is to detect the phase compensation amount of the external cavity by the phase fast adjustment component 7, and use different phase adjustment mechanisms (the phase fast adjustment component 7, the large phase adjustment component 5, the semiconductor refrigeration chip 17 and the temperature sensor 15).
  • the external cavity temperature control system) linear conversion relationship K between the external cavity phase adjustment sensitivities shifts the phase compensation amount detected by the phase fast adjustment component 7 to be realized by other phase adjustment mechanisms.
  • phase fast adjustment unit 7 is realized by piezoelectric ceramics (PZT)
  • PZT piezoelectric ceramics
  • large phase adjustment unit 5 is realized by heating the front and rear surfaces with an antireflection film single crystal silicon wafer.
  • the linear scaling factor K calibration process is as follows: the external cavity tunable laser sets a stable output channel according to the above step 601, gradually increases the loading voltage V of the piezoelectric ceramic, drives the external cavity mirror to translate into the cavity, and reduces the cavity length. At the same time, monitoring the change of the output frequency of the laser, the numerical relationship between the piezoelectric ceramic loading voltage and the output frequency of the laser can be obtained. As shown in Fig. 7, the external cavity has a small range of unidirectional changes, and the laser does not show obvious jumps in the whole process. Mode phenomenon. A linear fit is used for the numerical relationship between the piezoelectric ceramic loading voltage x p and the laser output optical frequency y p :
  • a similar process reducing the temperature of the large phase compensator monocrystalline silicon wafer and monitoring the change of the laser output optical frequency, can obtain a nearly linear fitting relationship between the temperature x b of the single crystal silicon wafer and the laser output optical frequency y b :
  • the proportionality factor K mentioned in step 604 of the cavity mode locking method can be calculated by:
  • the coefficient K is written in a fixed position in the EEPROM of the control unit 13, and the phase compensation function is switched between the phase adjustment functions to drive the input change value linear proportional coefficient.
  • the wavelength locking implementation device in the above technical solution of the present invention has a simple structure and high wavelength locking accuracy.
  • the control unit of the laser samples the output optical power through the optical power detecting device, monitors the small change of the output optical frequency of the laser, and adopts a real-time effective external cavity phase hybrid compensation method to achieve stable laser cavity mode and precise wavelength control.
  • the presence of multiple phase compensators in the outer cavity greatly increases the amount of phase compensation in the outer cavity.
  • the fast phase compensator can be realized by precisely controlling the position of the external cavity mirror by the piezoelectric ceramic; the large phase compensation amount compensator can be realized by the thermo-optic component, and the heating and temperature control unit is provided on the thermo-optic component, and the thermo-optic unit is controlled
  • the temperature of the component ie the optical path of the thermo-optic component, changes, thereby changing the cavity length of the external cavity tunable laser, compensating for the cavity mode phase.

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Abstract

一种外腔可调谐激光器以及其腔模锁定方法，其包括用于提供增益的半导体光放大器(1)，半导体光放大器(1)两端面上分别镀有部分反射膜与增透膜，扩束准直透镜(2)、可调谐滤波器(3)，固定栅格滤波器(4)和外腔反射镜(6)设置于半导体光放大器(1)镀有增透膜的一侧组成外腔可调谐激光器的外腔，外腔可调谐激光器的外腔进一步包括大相位调节组件(5)和相位快速调节组件(7)；大相位调节组件(5)能够对外腔可调谐激光器的外腔的腔长进行大范围的调节；相位快速调节组件(7)能够对外腔可调谐激光器的外腔的腔长进行快速的调节；这种装置和方法用于实现波长锁定，结构简单，波长锁定精度高。

Description

一种外腔可调谐激光器以及其腔模锁定方法 技术领域
本发明涉及一种外腔可调谐激光器的锁模方法，具体地说，涉及一种实现外腔可调谐激光器纵模锁定的方法和装置。利用该发明方法和装置进行纵模锁定的外腔可调谐激光器可适用于灵活波长栅格的光通信网络，本发明属于通信领域。
背景技术
可调谐激光器在光通信领域一直有着广泛的应用，尤其是近几年，随着高速光通信网络技术的发展，窄线宽可调谐激光器的需求不断增加，可调谐激光器是未来的光通信网络中的重要角色。从结构上分，可调谐激光器可分为单片集成型可调谐激光器和外腔型可调谐激光器。单片集成型可调谐激光器具有体积小、稳定性好等优点，但是目前其线宽比外腔可调谐激光器宽，不适用于高速光通信发展趋势。外腔可调谐激光器具有线宽窄、调谐范围大、技术难度低等优点，在现有的商用100G光网络传输系统应用中，外腔可调谐激光器占有很大的份额。但相比于单片集成型激光器，其稳定性较差，容易受到外界各种因素的干扰而引起跳模，从而导致激光器的特性劣化，影响系统传输性能，抑制跳模是外腔可调谐激光器使用过程中必须解决的一项重大任务，外腔可调谐激光器状态监控和在线调整是一项十分重要的工作。
针对不同结构的外腔可调谐激光器，目前提出的抑制跳模实现波长锁定的技术种类繁多，归纳起来就是针对振幅或相位条件偏离的监控和补偿技术。最常见的技术方案是采用功率极大值算法或者光功率谱局部特定斜率的算法确定纵模输出频率，通过调谐外腔中的相位调谐元件微调纵模输出频率，起到腔模锁定的作用。然而为了保证可调谐激光器长期工作的稳定性，调相元件既要保证较快的响应速度又要拥有大的相位可调范围，往往一种调相元件难以满足这两个要求，所以一个快速响应的调相元件与一个大相位调谐范围的调相元件的结合使用是最佳的选择。
外腔可调谐激光器有一个明显的缺点，容易受各种因素的影响发生跳模，从而导致激光器的特性劣化，抑制跳模是外腔可调谐激光器使用过程中一项必须解决的复杂技术。针对不同结构的外腔可调谐激光器提出的抑制跳模实现波长锁定的技术种类繁多，归纳起来就是针对振幅或相位条件偏离的监控和补偿技术。因此外腔可调谐激光器状态监控和在线调整是一项十分重要的工作。
发明内容
本发明的目的克服现有技术存在的技术缺陷，本发明针对外腔激光器腔模监控和外 腔相位补偿技术，提出了一种外腔可调谐激光器以及其腔模锁定方法，激光器的主控制器通过读取光功率检测装置的取样光功率监测激光器的输出光频率的微小变化，采取实时有效的外腔相位混合补偿方式，实现激光器腔模的稳定及波长精确控制。
本发明的技术方案是：
一种外腔可调谐激光器，其包括用于提供增益的半导体光放大器，半导体光放大器两端面上分别镀有部分反射膜与增透膜，所述外腔可调谐激光器的外腔设置在增透膜一侧，外腔包括扩束准直透镜、外腔反射镜；扩束准直透镜、外腔反射镜之间设置有可调谐滤波器、固定栅格滤波器，所述外腔可调谐激光器的外腔进一步包括大相位调节组件和相位快速调节组件；所述大相位调节组件能够对所述外腔可调谐激光器的外腔的腔长进行大范围的调节；所述相位快速调节组件能够对所述外腔可调谐激光器的外腔的腔长进行快速的调节；所述大相位调节组件、相位快速调节组件、可调谐滤波器、半导体光放大器同控制单元相连。
所述相位快速调节组件包括位移控制元件，所述位移控制元件固定于反射腔镜面上且可带动反射腔镜沿垂直于反射腔镜面方向快速微小移动。
所述大相位调节组件设置于外腔中的扩束准直透镜、外腔反射镜之间光路的任意位置；所述大相位调节组件包括一个或多个受控光学组件，所述受控光学组件能够在控制单元的控制下通过改变所述受控光学组件的折射率和/或厚度来改变控制激光器外腔的光学腔长。
所述受控光学组件为基于热光效应的温度可调热光组件或基于电光效应的驱动电压可调的光学组件或基于电光效应的驱动电流可调的光学组件。
所述基于热光效应的温度可调热光组件由通光面镀有增透膜的硅片、加热电阻片和温度传感器组成，加热电阻片和温度传感器分别粘接在硅片前后通光面的非通光区域，控制单元与加热电阻片和温度传感器相连以实现对硅片的温度闭环控制。
所述基于电光效应的驱动电压可调的光学组件或基于电光效应的驱动电流可调的光学组件采用通光面镀有增透膜的相位可调的液晶片，控制单元控制液晶片的加载电压或电流，使液晶片的光轴发生旋转，改变液晶片的折射率从而改变光程。
所述基于热光效应的温度可调热光组件由基板、半导体制冷片、温度传感器组成，温度传感器设置于基板上，基板下方设置半导体制冷片，半导体制冷片和温度传感器与控制单元相连。
所述大相位调节组件由基板、半导体制冷片、温度传感器组成，温度传感器设置于基板上，基板下方设置半导体制冷片，半导体制冷片和温度传感器与控制单元相连。
所述相位快速调节组件采用压电陶瓷。
所述半导体光放大器镀部分反射膜的一侧为该外腔激光器的耦合输出端，依次设置有第一输出光束准直透镜、光分束器、隔离器、第二输出光束准直透镜，光功率检测装置同光分束器另一路分光光路相对应，光功率检测装置与控制单元相连。
一种外腔可调谐激光器的腔模锁定方法，包括如下具体步骤：步骤601：激光器的控制单元接收切换光通道命令后，控制单元按照所切换光通道定标数据驱动可调滤波器至指定滤波参数，控制单元驱动大相位调节组件在一个相位周期内逐步改变相位直至光功率检测装置输出的光功率达到极大值，控制单元记录下最大光功率采集值P1Max，激光器完成光通道切换，实现波长精确输出，随即进入下面的持续的腔模的锁定阶段；步骤602：光功率检测装置持续采集输出光功率，控制单元计算当前光功率采样值与前一次波长锁定状态下最大光功率采集值P1Max之间的差值；步骤603：判断采样功率差值是否超过设定的阈值，如果超过阈值则进入步骤604；步骤604：控制单元记录下相位快速调节组件当前驱动输入值Df和大相位调节组件当前驱动输入值DL，控制单元启动相位快速调节组件补偿相位：驱动输入由Df－△到Df+△按设定的步长快速变化，相位快速调节组件带动反射腔镜沿垂直于反射腔镜面方向单向快速移动，光功率检测装置同步采集每一个驱动输入下的输出光功率，快速搜索这一过程中最大的光功率采样值P2Max及其对应的驱动输入值CDf，控制单元记录下光功率采集值P2Max；计算驱动输入值CDf与前一波锁状态下驱动输入值Df间的差值，使用该差值，由定标获取的线性比例系数K，换算成大相位调节组件驱动输入变化量△DL＝K*(Df－CDf)；使采样功率变化值保持在阈值和驱动输入的变化范围[-△,△]以内；步骤605：控制单元设置相位快速调节组件驱动输入为Df，设置大相位调节组件驱动输入为(DL+△DL)，激光器完成一次腔模锁定操作，进入下一次腔模锁定阶段；步骤606：采集光功率检测装置输出的光功率值，计算当前光功率采样值与前一次波长锁定状态下最大光功率采集值P2Max之间的差值；重复上述的步骤(603)～(606)，重复实现激光器的实时腔模锁定。
获得K值的定标方法为：逐渐调节相位快速调节组件的输入，驱动外腔反射镜平移以调整腔长，同时监测激光器输出光频率的变化，获得相位快速调节组件加载电压xp与激光器输出光频率yp间数值关系，并进行线性拟合：yp＝k1xp+b1；调节大相位调节组件的输入，监测激光器输出光频率的变化，获得大相位调节组件输入变化xb与激光器输出光频率yb间近似线性拟合关系：yb＝k2xb+b2；计算比例系数K＝k1/k2。
本发明具有以下优点和积极效果：
1)本发明产品外腔内包含多个(至少2个)有源相位调节组件，其中一个补偿器能够实现快速的相位补偿，用于探测外腔的相位实时补偿量，其他相位补偿器则用于实时的相位补偿。外腔中多个相位补偿器的存在，提高相位补偿速度的同时，大大增加了外腔相位补偿量，既有利于激光器腔模的快速实时锁定，也有利于激光器不同工作环境下长期稳频工作；
2)本发明用于实现波长锁定的装置结构简单，波长锁定精度高。激光器的主控制器通过光功率检测装置取样输出光功率，监测激光器的输出光频率的微小变化，采取实时有效的外腔相位混合补偿方式，实现激光器腔模的稳定及波长精确控制。
附图说明
图1是本发明的第一种实施例外腔可调谐激光器及波长锁定装置实施例示意图；
图2是本发明的第二种实施例外腔可调谐激光器及波长锁定装置实施例示意图；
图3是本发明的第三种实施例外腔可调谐激光器及波长锁定装置实施例示意图；
图4是本发明外腔可调谐激光器中可调滤波器件和周期栅格滤波器件的透射光谱及腔模示意图；
图5是根据本发明的实施例的一种快速相位补偿器的压电陶瓷加载电压与激光器输出光频率间关系曲线；
图6是本发明实施例的外腔可调谐激光器的腔模锁定方法流程图；
图7是激光器输出光频率和采样光功率与外腔的相位变化间的典型关系曲线；
其中：
1、半导体光放大器；         2、扩束准直透镜；
3、可调谐滤波器；           4、固定栅格滤波器；
5、大相位调节组件；         5-1、第一大相位调节组件；
5-2、第二大相位调节组件；   6、外腔反射镜；
7、相位快速调节组件；       8、第一输出光束准直透镜；
9、第二输出光束准直透镜；   10、光分束器；
11、光隔离器；              12、光功率检测装置；
13、控制单元；              14、输出光纤；
15、温度传感器；            17、半导体制冷片；
16、基板；
具体实施方式
下面结合附图和实施例进一步说明。
外腔可调谐激光器有很多谐振腔模，使之能够单模工作的方法是在腔内加入窄带滤光器，而外腔可调谐激光器是通过腔内可调窄带滤光器来实现的。
本发明所涉及的外腔可调谐激光器第一种实施列实现装置如图1所示，包括耦合输出光路，分光元件，光功率检测装置、外腔可调谐激光器，其中外腔内多种有源相位调节组件，具体构成包括半导体光放大器1、扩束准直透镜2、可调谐滤波器3、固定栅格滤波器4、大相位调节组件5、外腔反射镜6、相位快速调节组件7，第一输出光束准直透镜8、第二输出光束准直透镜9、光分束器10、光隔离器11、光功率检测装置12、控制单元13、输出光纤14。其中半导体光放大器1用于提供增益，其两端面分别镀有部分反射膜与增透膜。扩束准直透镜2、可调谐滤波器3、固定栅格滤波器4、大相位调节组件5和外腔反射镜6、相位快速调节组件7依次设置于半导体光放大器1镀有增透膜的一 侧，组成该外腔可调谐激光器的外腔，整个激光器的外腔元件和温度传感器15都设置于基板16之上，基板下方设置有半导体制冷片17。半导体制冷片17和温度传感器15与系统的控制单元13相连，如图1所示。第一输出光束准直透镜8、光分束器10、隔离器11、第二输出光束准直透镜9、输出光纤14设置于半导体光放大器1镀有部分反射膜的一侧，组成该外腔可调谐激光器的耦合输出光路。光分束器10将输出激光分为两部分，其中分取一小部分光功率至光功率检测装置12，经电路放大供控制单元13对腔外功率定时采样；另一部分输出的激光通过光隔离器11，最后经第二输出光束准直透镜9耦合进入输出光纤14。整个系统的控制单元13包含有与光功率检测装置12相连接的读取模块，与读取模块相连接的运算模块，与运算模块、大相位调节组件5、相位快速调节组件7和可调谐滤波器3相连接的驱动模块，以及与半导体制冷片17和温度传感器15相连接的外腔控温模块。
本发明中可调谐滤波器3、固定栅格滤波器4、大相位调节组件5可设置在扩束准直透镜2与外腔反射镜6之间的任意位置，并不限定于图1结构。即：所述外腔可调谐激光器的外腔设置在增透膜一侧，外腔包括扩束准直透镜2、外腔反射镜6；扩束准直透镜2、外腔反射镜6之间设置有可调谐滤波器3、固定栅格滤波器4，可调谐滤波器3、固定栅格滤波器4位置可以对调设置。大相位调节组件5设置于外腔中的扩束准直透镜2、外腔反射镜6之间光路的任意位置。
本发明结构中组成部件的作用具体如下：
注入到半导体光放大器1的电流通过电光转换转化为宽带的自发辐射的光子，这些光子沿着波导向两侧传播，一部分特定频率的光子在谐振腔内往返传播多次满足阈值条件，实现振荡放大，从而形成激光从半导体光放大器1的部分反射端面射出。
所述的固定栅格滤波器4是法布理-泊罗标准具或者其它产生周期栅格滤波器件，对于用于密集波分复用(Dense Wavelength Division Multiplexing，DWDM)系统的激光器，该周期对应于ITU-T规定的标准的DWDM间隔，如25GHz，50GHz，100GHz或者200GHz。
有源大相位调节组件5和相位快速调节组件7都用于改变激光器外腔的腔长，相位快速调节组件7主要用于外腔相位补偿量的快速探测，有源大相位调节组件5对激光器外腔的腔长调节范围更大，是外腔相位补偿的实际执行单元。
可调谐滤波器3、相位快速调节组件7与有源大相位调节组件5一起同步调节起到调谐激光器频率的作用。外腔可调谐激光器的最佳腔模波长输出，对应最大光功率采集检测值，光功率采样检测值的变化反应激光器输出光频率的微小变化。
所述的相位快速调节组件7是固定于外腔反射镜6上、并使得外腔反射镜6沿垂直于反射腔的镜面方向做快速微小移动的位移控制元件。本发明采用压电陶瓷(Piezoelectric Transducer，PZT)来作为相位快速调节组件7，从而以精密控制外腔反射镜6位置的方式实现相位调节。光功率检测装置12可同时监测激光器输出功率大小和频率的变化，为稳频系统提供反馈控制的依据。
基于图1本发明这种外腔可调谐激光器实现装置第一种实施例，外腔控制温度恒定，激光器内设置有分立的大相位调节组件5，激光器外腔腔长的大范围调节由大相位调节组件5实现。大相位调节组件5可以采用基于热光效应的温度可调热光组件或基于电光效应的驱动电压或驱动电流可调的光学组件。基于热光效应的大相位调节组件5热光组件可以由通光面镀有增透膜的硅片、加热电阻片和温度传感器组成，加热电阻片和温度传感器分别粘接在硅片前后通光面的非通光区域，与控制单元13相连实现对硅片的温度闭环控制。通过控制热硅片的温度，使硅片的光程改变，从而改变外腔可调谐激光器的腔长，补偿腔模相位。采用电光效应的大相位调节组件5也可选用通光面镀有增透膜的相位可调的液晶片，控制单元13通过控制液晶片的加载电压，使液晶片的光轴发生旋转，改变液晶片的有效折射率达到改变光程目的。
外腔可调谐激光器的第二种实施例如图2所示，激光器外腔内不设置独立的有源大相位调节组件，即去掉了大相位调节组件5，由基板16、半导体制冷片17、温度传感器15实现大相位调节组件5功能。半导体制冷片17和温度传感器15与系统的控制单元13相连。基板16存在热胀冷缩效应，控制单元13改变半导体制冷片17的温度，使基板16长度发生变化，实现改变外腔腔长的目的。
本发明实施例包括但不限于一种或两种大相位调节组件5，大相位调节组件5可以至少一个以上的大相位调节组件组合而成。相位快速调节组件7包括但不限于压电陶瓷和可以通过外部控制手段实现位移控制的元件，大相位调节组件5包括但不限于基于电光效应、热光效应以及各种应力感应的光程可变元件。
外腔可调谐激光器的第三种实施例如图3所示，外腔控制温度恒定，激光器内设置有两种不同的分立的第一大相位调节组件5-1和第二大相调节组件5-2。第一大相位调节组件5-1和第二大相位调节组件5-2组合而成大相位调节相位组件。第一大相位调节组件5-1、第二大相位调节组件5-2可以采用基于热光效应的温度可调热光组件或基于电光效应的驱动电压或驱动电流可调的光学组件。基于热光效应的第一大相位调节组件5-1热光组件可以由通光面镀有增透膜的硅片、加热电阻片和温度传感器组成，加热电阻片和温度传感器分别粘接在硅片前后通光面的非通光区域，与控制单元13相连实现对硅片的温度闭环控制。通过控制热硅片的温度，使硅片的光程改变，从而改变外腔可调激光器的腔长，补偿腔模相位。采用电光效应的第二大相位调节组件5-2也可选用通光面镀有增透膜的相位可调的液晶片，控制单元13通过控制液晶片的加载电压，使液晶片的光轴发生旋转，改变液晶片的有效折射率达到改变光程目的。外腔可调谐激光器在光通道切换阶段，控制单元13驱动第二大相位调节组件5-2，调节外腔腔长，实现波长精确输出；持续的腔模锁定阶段，第二大相位调节组件5-2驱动输入不变，相位快速调节组件和大相位调节组件之间通过一种特殊定标算法倒换相位补偿量实现稳频。
下面阐述本发明外腔可调谐激光器的调谐机理：如图4给出了本发明外腔可调谐激光器中可调谐滤波器3和固定栅格滤波器4的透射光谱及腔模示意图。如图4所示，A1 为固定栅格滤波器4的透射谱，A2为可调谐滤波器3的透射谱，A4、A5、A6为谐振腔模式。可调谐激光器设定一个ITU-T波长输出，A2与A1一个透射峰对准，可调谐滤波器3和固定栅格滤波器4的合成透射光谱为A3，A3中透射率远大于其他次峰的透射峰称为透射主峰。通过外腔相位调节机制移动外腔激光器的腔模，激光器中与透射主峰最近的腔模与可调滤波器合成透射光谱主峰重合，在外腔内得到远大于其它腔模的增益放大，激光器实现单模工作和最大功率输出，处于最佳波长锁定状态。在不跳模的前提下，激光器中与主峰最近的腔模沿光频率增大的方向(外腔的往返光程逐渐减小)先逐渐逼近透射光谱主峰，再逐渐远离透射光谱主峰，得到的激光器输出光频率和采样光功率与外腔的相位变化间的典型关系曲线如图5所示。曲线图5中，沿着x轴正方向外腔的相位逐渐减小，最佳腔模波长输出，对应最大光功率采集检测值，光功率采样检测值的变化反应激光器输出光频率的微小变化，激光器输出光频率的变化值与外腔的相位变化基本呈线性比例关系。本发明提出的腔模锁定方法就是根据这一原理提出的，包括光通道切换阶段和持续的腔模锁定阶段。
下面结合本发明的第一种实施例，以基于热光效应的温度可调大相位调节组件5为例阐述本发明所述的外腔可调谐激光器的腔模锁定方法，流程图如图6所示。具体实施方案如下：
步骤601：激光器控制单元13接收切换光通道命令，控制单元13按照所切换光通道定标数据驱动可调滤波器3，控制单元13按照预定的步长及变温范围逐步降低大相位调节组件5的温度，即实现在一个相位周期内逐步搜索最佳的补偿相位，直至光功率检测装置12输出的光功率极大值，控制单元13记录下最大光功率采集值P1Max，激光器完成光通道切换，实现波长精确输出，随即进入下面的持续的腔模的锁定阶段；
步骤602：光功率检测装置12持续采集输出光功率，控制单元13计算当前光功率采样值与前一次波长锁定状态下最大光功率采集值P1Max之间的差值；
步骤603：判断采样功率差值是否超过设定的阈值；
步骤604：如果超过阈值，控制单元13则记录下相位快速调节组件7当前驱动输入值Df和大相位调节组件5当前驱动输入值DL，控制单元13启动相位快速调节组件7补偿相位：驱动输入由Df－△到Df+△按设定的步长快速变化，相位快速调节组件7带动反射腔镜6沿垂直于反射腔镜面方向单向快速移动，光功率检测装置12同步采集每一个驱动输入下的输出光功率，快速搜索这一过程中最大的光功率采样值P2Max及其驱动输入值CDf，控制单元13记录下光功率采集值P2Max；计算驱动输入值CDf与波锁状态下驱动输入值Df间的差值，使用该差值，由定标获取的线性比例系数K，换算成大相位调节组件5驱动输入变化量△DL＝K*(Df－CDf)；采样功率变化值的阈值和相位快速调节组件7驱动输入的变化范围[-△,△]视激光器指标要求的波长精度而定，由定标获取，即采样功率变化值在阈值及驱动输入的变化范围[-△,△]以内，激光器的输出波长即符合指标要求的波长精度；
步骤605：控制单元13设置相位快速调节组件7驱动输入为Df，设置大相位补偿器5驱动输入为(DL+△DL)，激光器完成一次腔模锁定操作，进入下一次腔模锁定阶段；
步骤606：采集腔外光功率检测装置12输出的光功率值，计算当前光功率采样值与前一次波长锁定状态下最大光功率采集值P2Max之间的差值；
重复上述的步骤603～606，可重复实现激光器的实时腔模锁定，整个过程外腔控制温度恒定，激光器在指标要求范围内波长稳定输出。
上面所述的外腔可调谐激光器的腔模锁定方法包括但不限于本发明的第一种实施例，对于本发明的第二种和第三种实施例同样适合。所述的外腔可调谐激光器的腔模锁定方法应用于第二种实施例，将针对于第一种实施例的所有步骤中控制单元13对大相位调节组件5所有操作转化为控制单元13对半导体制冷片17和温度传感器15组成外腔控温系统的温度控制来实现。所述的外腔可调谐激光器的腔模锁定方法应用于第三种实施例：步骤601光通道切换阶段，控制单元13驱动第一大相位调节组件5-2，调节外腔腔长，实现波长精确输出；步骤602～606持续的腔模锁定稳频阶段，第二大相位调节组件5-2驱动输入不变，由相位快速调节组件7和第一大相位调节组件5-1实现相互之间的相位补偿量倒换。
所述的腔模锁定方法中，只有当前光功率采样值与前一次波长锁定状态下最大光功率采集值之间的差值，超过设定的阈值，才启动有源相位补偿机制；采样功率变化值的阈值视激光器指标要求的波长精度而定，即采样功率变化值在阈值以内，激光器的输出波长即符合指标要求的波长精度；下一次波长锁定启动之前用于比较的最大光功率采集值取前一次波长锁定状态下最大光功率采集值。
本发明腔模锁定方法主要思想是通过相位快速调节组件7探测外腔的相位补偿量，利用不同相位调节机制(相位快速调节组件7、大相位调节组件5和半导体制冷片17和温度传感器15组成外腔控温系统)外腔相位调节灵敏度之间的线性换算关系K将相位快速调节组件7探测的相位补偿量转移到由其他相位调节机制实现。
下面以本发明的第一种实施例来说明腔模锁定方法中步骤604提及的比例系数K的定标计算方法。此处，假设相位快速调节组件7采用压电陶瓷(PZT)来实现，大相位调节组件5通过加热前后表面镀有增透膜单晶硅片来实现。
线性比例系数K定标过程如下：外腔可调谐激光器按上述的步骤601设定一个稳定输出通道，逐渐增大压电陶瓷的加载电压V，驱动外腔反射镜向腔内平移，缩小腔长，同时监测激光器输出光频率的变化，可以得到压电陶瓷加载电压与激光器输出光频率间的数值关系，如图7所示，外腔相位小范围单向变化，整个过程激光器没有出现明显的跳模现象。对于压电陶瓷加载电压xp与激光器输出光频率yp间数值关系使用线性拟合：
yp＝k1xp+b1
类似过程，降低大相位补偿器单晶硅片的温度，监测激光器输出光频率的变化，可以得到单晶硅片的温度xb与激光器输出光频率yb间近似线性拟合关系：
yb＝k2xb+b2
腔模锁定方法中步骤604提及的比例系数K，可以由下式计算得到：
K＝k1/k2
因此，在控制单元13的EEPROM里的固定位置处中写入系数K，作为不同相位调节机制间相位补偿功能相互切换驱动输入变化值线性比例系数。
综上所述，本发明上述技术方案中的波长锁定实现装置结构简单，波长锁定精度高。激光器的控制单元通过光功率检测装置取样输出光功率，监测激光器的输出光频率的微小变化，采取实时有效的外腔相位混合补偿方式，实现激光器腔模的稳定及波长精确控制。外腔中多个相位补偿器的存在，大大增加了外腔相位补偿量。所述快速相位补偿器可通过压电陶瓷精密控制外腔反射镜位置的方式实现；大相位补偿量补偿器可以由热光组件实现，热光组件上设有加热控温单元，通过控制热光组件的温度，即热光组件的光程改变，从而改变外腔可调激光器的腔长，补偿腔模相位。
以上所述仅为本发明的优选实施例，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
虽然本发明已经详细示例并描述了相关的特定实施例做参考，但对本领域的技术人员来说，在阅读和理解了该说明书和附图后，在不背离本发明的思想和范围特别是上述装置实施的功能上，可以在装置形式和细节上作出各种改变。这些改变都将落入本发明的权利要求所要求的保护范围。

Claims (12)

  1. 一种外腔可调谐激光器，其包括用于提供增益的半导体光放大器(1)，半导体光放大器(1)两端面上分别镀有部分反射膜与增透膜，所述外腔可调谐激光器的外腔设置在增透膜一侧，外腔包括扩束准直透镜(2)、外腔反射镜(6)；扩束准直透镜(2)、外腔反射镜(6)之间设置有可调谐滤波器(3)、固定栅格滤波器(4)，其特征在于：所述外腔可调谐激光器的外腔进一步包括大相位调节组件(5)和相位快速调节组件(7)；所述大相位调节组件(5)能够对所述外腔可调谐激光器的外腔的腔长进行大范围的调节；所述相位快速调节组件(7)能够对所述外腔可调谐激光器的外腔的腔长进行快速的调节；所述大相位调节组件(5)、相位快速调节组件(7)、可调谐滤波器(3)、半导体光放大器(1)同控制单元(13)相连。
  2. 根据权利要求1所述的一种外腔可调谐激光器，其特征在于：所述相位快速调节组件(7)包括位移控制元件，所述位移控制元件固定于反射腔镜面(6)上且可带动反射腔镜(6)沿垂直于反射腔镜面方向快速微小移动。
  3. 根据权利要求2所述的一种外腔可调谐激光器，其特征在于：所述大相位调节组件(5)设置于外腔中的扩束准直透镜(2)、外腔反射镜(6)之间光路的任意位置；所述大相位调节组件(5)包括一个或多个受控光学组件，所述受控光学组件能够在控制单元(13)的控制下通过改变所述受控光学组件的折射率和/或厚度来改变控制激光器外腔的光学腔长。
  4. 根据权利要求3所述的一种外腔可调谐激光器，其特征在于：所述受控光学组件为基于热光效应的温度可调热光组件或基于电光效应的驱动电压可调的光学组件或基于电光效应的驱动电流可调的光学组件。
  5. 根据权利要求4所述的一种外腔可调谐激光器，其特征在于：所述基于热光效应的温度可调热光组件由通光面镀有增透膜的硅片、加热电阻片和温度传感器组成，加热电阻片和温度传感器分别粘接在硅片前后通光面的非通光区 域，控制单元(13)与加热电阻片和温度传感器相连以实现对硅片的温度闭环控制。
  6. 根据权利要求4所述的一种外腔可调谐激光器，其特征在于：所述基于电光效应的驱动电压可调的光学组件或基于电光效应的驱动电流可调的光学组件采用通光面镀有增透膜的相位可调的液晶片，控制单元(13)控制液晶片的加载电压或电流，使液晶片的光轴发生旋转，改变液晶片的折射率从而改变光程。
  7. 根据权利要求4所述的一种外腔可调谐激光器，其特征在于：所述基于热光效应的温度可调热光组件由基板(16)、半导体制冷片(17)、温度传感器(15)组成，温度传感器(15)设置于基板(16)上，基板(16)下方设置半导体制冷片(17)，半导体制冷片(17)和温度传感器(15)与控制单元(13)相连。
  8. 根据权利要求2所述的一种外腔可调谐激光器，其特征在于：所述大相位调节组件(5)由基板(16)、半导体制冷片(17)、温度传感器(15)组成，温度传感器(15)设置于基板(16)上，基板(16)下方设置半导体制冷片(17)，半导体制冷片(17)和温度传感器(15)与控制单元(13)相连。
  9. 根据权利要求1-8中任意一项所述的一种外腔可调谐激光器，其特征在于：所述相位快速调节组件(7)采用压电陶瓷。
  10. 根据权利要求1-8中任意一项所述的一种外腔可调谐激光器，其特征在于：所述半导体光放大器(1)镀部分反射膜的一侧为该外腔激光器的耦合输出端，依次设置有第一输出光束准直透镜(8)、光分束器(10)、隔离器(11)、第二输出光束准直透镜(9)，光功率检测装置(12)同光分束器(10)另一路分光光路相对应，光功率检测装置(12)与控制单元(13)相连。
  11. 一种利用权利要求10所述的一种外腔可调谐激光器的腔模锁定方法，其特征在于：包括如下具体步骤：
    步骤601：激光器的控制单元(13)接收切换光通道命令后，控制单元(13)按照所切换光通道定标数据驱动可调滤波器(3)至指定滤波参数，控制单元(13)驱动大相位调节组件(5)在一个相位周期内逐步改变相位直至光功率检测装置(12)输出的光功率达到极大值，控制单元(13)记录下最大光功率采集值P1Max，激光器完成光通道切换，实现波长精确输出，随即进入下面的持续的腔模的锁定阶段；
    步骤602：光功率检测装置(12)持续采集输出光功率，控制单元(13)计算当前光功率采样值与前一次波长锁定状态下最大光功率采集值P1Max之间的差值；
    步骤603：判断采样功率差值是否超过设定的阈值，如果超过阈值则进入步骤604；
    步骤604：控制单元(13)记录下相位快速调节组件(7)当前驱动输入值Df和大相位调节组件(5)当前驱动输入值DL，控制单元(13)启动相位快速调节组件(7)补偿相位：驱动输入由Df－△到Df+△按设定的步长快速变化，相位快速调节组件(7)带动反射腔镜(6)沿垂直于反射腔镜面方向单向快速移动，光功率检测装置(12)同步采集每一个驱动输入下的输出光功率，快速搜索这一过程中最大的光功率采样值P2Max及其对应的驱动输入值CDf，控制单元(13)记录下光功率采集值P2Max；计算驱动输入值CDf与前一波锁状态下驱动输入值Df间的差值，使用该差值，由定标获取的线性比例系数K，换算成大相位调节组件(5)驱动输入变化量△DL＝K*(Df－CDf)；使采样功率变化值保持在阈值和驱动输入的变化范围[-△,△]以内；
    步骤605：控制单元(13)设置相位快速调节组件驱动输入为Df，设置大相位调节组件(5)驱动输入为(DL+△DL)，激光器完成一次腔模锁定操作，进入下一次腔模锁定阶段；
    步骤606：采集光功率检测装置(12)输出的光功率值，计算当前光功率采样值与前一次波长锁定状态下最大光功率采集值P2Max之间的差值；
    重复上述的步骤(603)～(606)，重复实现激光器的实时腔模锁定。
  12. 根据权利要求11所述的一种外腔可调谐激光器的腔模锁定方法，其特征在于：获得K值的定标方法为：逐渐调节相位快速调节组件(7)的输入，驱动外腔反射镜(6)平移以调整腔长，同时监测激光器输出光频率的变化，获得相位快速调节组件(7)加载电压xp与激光器输出光频率yp间数值关系，并进行线性拟合：yp＝k1xp+b1；调节大相位调节组件(5)的输入，监测激光器输出光频率的变化，获得大相位调节组件(5)输入变化xb与激光器输出光频率yb间近似线性拟合关系：yb＝k2xb+b2；计算比例系数K＝k1/k2。
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