WO2016035687A1 - 半導体加工用テープ及びこれを使用して製造した半導体装置 - Google Patents

半導体加工用テープ及びこれを使用して製造した半導体装置 Download PDF

Info

Publication number
WO2016035687A1
WO2016035687A1 PCT/JP2015/074338 JP2015074338W WO2016035687A1 WO 2016035687 A1 WO2016035687 A1 WO 2016035687A1 JP 2015074338 W JP2015074338 W JP 2015074338W WO 2016035687 A1 WO2016035687 A1 WO 2016035687A1
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive layer
semiconductor processing
wafer
resin
tape
Prior art date
Application number
PCT/JP2015/074338
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
俊光 中村
二朗 杉山
Original Assignee
古河電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 古河電気工業株式会社 filed Critical 古河電気工業株式会社
Priority to CN201580046165.5A priority Critical patent/CN106663617B/zh
Priority to KR1020177005291A priority patent/KR101828226B1/ko
Priority to SG11201701479TA priority patent/SG11201701479TA/en
Publication of WO2016035687A1 publication Critical patent/WO2016035687A1/ja
Priority to PH12017500394A priority patent/PH12017500394A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Definitions

  • the present invention can be used for fixing a semiconductor wafer in a dicing process for dividing a semiconductor wafer into chip-like elements, and further die bonding for bonding between chips after dicing or between a chip and a substrate.
  • An expandable semiconductor processing tape that can be used in a process and a mounting process, and can also be used in a process of dividing an adhesive layer along a chip by an expand, and a semiconductor device manufactured using the semiconductor processing tape About.
  • a back grinding process for grinding the back surface of the wafer in order to thin the wafer after forming the circuit pattern, and adhesive and stretchable on the back surface of the wafer.
  • a dicing process for dividing the wafer into chips
  • an expanding process for expanding the semiconductor processing tape
  • a pickup process for picking up the divided chips
  • a picked-up chip A die bonding (mounting) step of bonding to a lead frame or a package substrate (or stacking and bonding chips in a stacked package) is performed.
  • a surface protective tape is used to protect the circuit pattern forming surface (wafer surface) of the wafer from contamination.
  • the semiconductor processing tape (dicing / die bonding tape) described below is bonded to the backside of the wafer and then applied to the suction table for semiconductor processing.
  • the tape side is fixed, the surface protective tape is subjected to a treatment for reducing the adhesive strength to the wafer, and then the surface protective tape is peeled off.
  • the wafer from which the surface protection tape has been peeled is then picked up from the suction table in a state where the wafer is bonded to the back surface, and is subjected to the next dicing process.
  • the treatment for reducing the adhesive force is an energy ray irradiation treatment
  • the surface protection tape is made of a thermosetting component, Heat treatment.
  • a semiconductor processing tape in which an adhesive layer and an adhesive layer are laminated in this order on a base film is used.
  • an adhesive layer of the semiconductor processing tape is bonded to the back surface of the wafer to fix the wafer, and the wafer and the adhesive layer are chipped using a dicing blade. Dicing into units.
  • an expanding process is performed to expand the distance between the chips by expanding the tape in the radial direction of the wafer. This expanding process is performed in the subsequent pick-up process in order to improve chip recognition by a CCD camera or the like and to prevent chip breakage caused by contact between adjacent chips when picking up a chip.
  • the chip is peeled off from the adhesive layer together with the adhesive layer in the pickup process and picked up, and directly attached to the lead frame, the package substrate, etc. in the mounting process.
  • a semiconductor processing tape it is possible to directly bond a chip with an adhesive layer to a lead frame, a package substrate, etc., so an adhesive coating process or separate die bonding to each chip The step of adhering the film can be omitted.
  • the wafer and the adhesive layer are diced together using the dicing blade, and therefore not only the wafer cutting waste but also the adhesive layer cutting waste is generated. Then, when the cutting waste of the adhesive layer is clogged in the dicing groove of the wafer, there is a problem that chips are stuck to each other to cause a pickup failure and the manufacturing yield of the semiconductor device is lowered.
  • Patent Document 1 a method for dividing the adhesive layer using the tension at the time of expansion, no cutting waste of the adhesive is generated, and there is no adverse effect in the pickup process.
  • a so-called stealth dicing method that can cut a wafer in a non-contact manner using a laser processing apparatus has been proposed as a wafer cutting method.
  • a stealth dicing method an adhesive layer (die bond resin layer) is interposed, a focus light is adjusted inside a semiconductor substrate to which a sheet is attached, and laser light is irradiated.
  • a method for cutting a semiconductor substrate comprising the steps of:
  • Patent Document 3 discloses a process of attaching an adhesive layer (adhesive film) for die bonding to the back surface of a wafer, and the adhesive layer includes The process of pasting a stretchable protective adhesive sheet on the adhesive layer side of the bonded wafer, and irradiating the laser beam along the street from the surface of the wafer bonded with the protective adhesive sheet to each chip The process of dividing, expanding the protective adhesive sheet to give tensile force to the adhesive layer, breaking the adhesive layer for each chip, and protecting the chip on which the broken adhesive layer is bonded A wafer dividing method including a step of separating from a sheet has been proposed.
  • the expansion step is performed at 0 ° C. or ⁇ 15 ° C. in order to improve the dividing property of the adhesive layer.
  • the subsequent pick-up process and mounting process may be performed at room temperature.
  • the splitting property at normal temperature is increased and the brittleness becomes fragile. Therefore, it becomes easy to cut and crack due to impacts during transportation, and even if there is no cut or crack, it is easy to stretch the adhesive layer during the pre-cut process to process the adhesive layer to the specified size. There was a problem of breaking.
  • the present invention is suitable for semiconductor processing that does not cause cuts or cracks due to impact during transportation, etc., and has excellent processability that does not crack even when stretched in a pre-cut process that processes the adhesive layer to a specified size. It is an object to provide a tape.
  • a semiconductor processing tape according to the present invention has an adhesive layer and a pressure-sensitive adhesive sheet laminated, and the adhesive layer is in a right-angle test method defined in JIS K7128-3.
  • the tear strength (A) is 0.8 MPa or more.
  • the adhesive layer is torn when a cut portion having a length of 1 mm is inserted from the tip of the right-angled portion on the center line passing through the right-angled tip of the test piece in the right-angle test method.
  • the strength (B) is preferably 0.5 MPa or more.
  • the semiconductor processing tape preferably has an elongation percentage of the adhesive sheet of 200% or more.
  • the semiconductor processing tape is preferably 120% or less by heating the adhesive sheet to 120 ° C. after extending the adhesive sheet to 200% elongation.
  • the adhesive layer has a tear strength (C) of 0.8 MPa or less in a right angle test method defined in JIS K7128-3 at ⁇ 15 ° C.
  • the semiconductor processing tape expands the pressure-sensitive adhesive sheet to divide only the wafer and the adhesive layer or the adhesive layer bonded to the adhesive layer in correspondence with individual chips. It is preferable to be used for this purpose.
  • a semiconductor device according to the present invention is manufactured using the above-described semiconductor processing tape.
  • the adhesive layer has an incision-free tear strength (A) of 0.8 MPa or more in the test method for a right-angle type test piece shown in JIS K7128-3.
  • A incision-free tear strength
  • (B) It is sectional drawing which shows the process in which a wafer is divided
  • (C) It is sectional drawing which shows the tape for semiconductor processing after expansion, an adhesive bond layer, and a chip
  • (A) is a top view of the test piece used for a right-angle test method,
  • (b) is a top view of the test piece which put the cut part.
  • FIG. 1 is a cross-sectional view showing a semiconductor processing tape 10 according to an embodiment of the present invention.
  • the adhesive layer 13 is divided along the chip when the wafer is divided into chips by the expand.
  • This tape 10 for semiconductor processing has a pressure-sensitive adhesive sheet 15 composed of a base film 11 and a pressure-sensitive adhesive layer 12 provided on the base film 11, and an adhesive layer 13 provided on the pressure-sensitive adhesive layer 12. Then, the back surface of the wafer is bonded onto the adhesive layer 13.
  • Each layer may be cut (precut) into a predetermined shape in advance according to the use process and the apparatus.
  • the semiconductor processing tape 10 of the present invention may be in a form cut for each wafer, or a long sheet formed by cutting a plurality of wafers for each wafer, The form wound up in roll shape may be sufficient. Below, the structure of each layer is demonstrated.
  • the base film 11 is preferably uniform and isotropically expandable in that the wafer can be cut without deviation in all directions in the expanding process, and the material is not particularly limited.
  • the cross-linked resin has a greater restoring force against tension than the non-cross-linked resin, and has a large shrinkage stress when heat is applied to the stretched state after the expanding step. Therefore, it is excellent in the heat shrink process in which the slack generated in the tape after the expanding process is removed by heat shrinkage and the tape is tensioned to keep the interval between the individual chips stable.
  • thermoplastic crosslinked resins are more preferably used.
  • the non-crosslinked resin has a low restoring force against tension compared to the crosslinked resin.
  • non-crosslinked resins olefinic non-crosslinked resins are more preferably used.
  • thermoplastic crosslinked resin examples include ethylene- (meth) acrylic acid binary copolymer or ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester as a main polymer constituent.
  • An ionomer resin obtained by crosslinking the original copolymer with a metal ion is exemplified. These are particularly suitable in that they are suitable for the expanding process in terms of uniform expansibility and have a strong restoring force when heated by crosslinking.
  • the metal ion contained in the ionomer resin is not particularly limited, and examples thereof include zinc and atrium. Zinc ions are preferable from the viewpoint of low elution and low contamination.
  • the alkyl group having 1 to 4 carbon atoms preferably has a high elastic modulus and can transmit a strong force to the wafer.
  • examples of such (meth) acrylic acid alkyl esters include methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate, propyl acrylate, and butyl acrylate. Can be mentioned.
  • thermoplastic crosslinked resin in addition to the above-mentioned ionomer resin, a low density polyethylene having a specific gravity of 0.910 to less than 0.930, an ultra low density polyethylene having a specific gravity of less than 0.910, and ethylene-acetic acid.
  • a resin selected from vinyl copolymers is also preferably crosslinked by irradiating an energy beam such as an electron beam.
  • Such a thermoplastic cross-linked resin has a certain uniform expansibility since a cross-linked site and a non-cross-linked site coexist in the resin.
  • non-crosslinked resin for example, a mixed resin composition of polypropylene and a styrene-butadiene copolymer is exemplified.
  • the polypropylene for example, a homopolymer of propylene or a block type or random type propylene-ethylene copolymer can be used. Random type propylene-ethylene copolymers are preferred because of their low rigidity.
  • the content of the ethylene structural unit in the propylene-ethylene copolymer is 0.1% by weight or more, it is excellent in that the rigidity of the tape and the compatibility between the resins in the mixed resin composition are high.
  • the rigidity of the tape is appropriate, the cutting property of the wafer is improved, and when the compatibility between the resins is high, the extrusion discharge amount is easily stabilized. More preferably, it is 1% by weight or more.
  • the content of the ethylene structural unit in the propylene-ethylene copolymer is 7% by weight or less, it is excellent in that the polypropylene is stably and easily polymerized. More preferably, it is 5% by weight or less.
  • the styrene-butadiene copolymer As the styrene-butadiene copolymer, a hydrogenated one may be used. When the styrene-butadiene copolymer is hydrogenated, it has good compatibility with propylene and can prevent embrittlement and discoloration due to oxidative degradation due to double bonds in butadiene. Further, it is preferable that the content of the styrene structural unit in the styrene-butadiene copolymer is 5% by weight or more from the viewpoint that the styrene-butadiene copolymer is stable and easily polymerized. Moreover, if it is 40 weight% or less, it is flexible and excellent in terms of expandability.
  • the styrene-butadiene copolymer either a block-type copolymer or a random-type copolymer can be used.
  • the random copolymer is preferable because the styrene phase is uniformly dispersed, the rigidity is prevented from being excessively increased, and the expandability is improved.
  • the content of polypropylene in the mixed resin composition is 30% by weight or more, it is excellent in that the thickness unevenness of the base film can be suppressed. If the thickness is uniform, the extensibility tends to be isotropic, the stress relaxation property of the base film becomes too large, the distance between the chips becomes smaller with time, and the adhesive layers come into contact with each other and remelt. Easy to prevent wearing. More preferably, it is 50 weight% or more. Moreover, it is easy to adjust the rigidity of a base film suitably as the content rate of a polypropylene is 90 weight% or less. If the rigidity of the base film becomes too large, the force required to expand the base film increases, which increases the load on the device and may not allow sufficient expansion to divide the wafer and adhesive layer.
  • the lower limit of the content of the styrene-butadiene copolymer in the mixed resin composition is preferably 10% by weight or more, and it is easy to adjust the rigidity of the base film suitable for the apparatus.
  • An upper limit of 70% by weight or less is excellent in that thickness unevenness can be suppressed, and 50% by weight or less is more preferable.
  • the base film 11 is a single layer, but is not limited to this, and may have a multilayer structure in which two or more kinds of resins are laminated, or one kind of resin. Two or more layers may be laminated. Two or more kinds of resins are preferable from the viewpoint of expressing each characteristic more enhanced if the crosslinkability or noncrosslinkability is unified, and each of them when laminated with a combination of crosslinkability or noncrosslinkability. It is preferable in that the above disadvantage is compensated.
  • the thickness of the base film 11 is not particularly defined, but it is sufficient that the base film 11 has sufficient strength to be easily stretched and not broken in the expanding process of the semiconductor processing tape 10. For example, the thickness is preferably about 50 to 300 ⁇ m, more preferably 80 ⁇ m to 200 ⁇ m.
  • a conventionally known extrusion method, laminating method, or the like can be used as a method for producing the multi-layer base film 11.
  • laminating method an adhesive may be interposed between the layers.
  • a conventionally well-known adhesive agent can be used as an adhesive agent.
  • the pressure-sensitive adhesive layer 12 can be formed by applying a pressure-sensitive adhesive composition to the base film 11.
  • the pressure-sensitive adhesive layer 12 constituting the semiconductor processing tape 10 of the present invention has a holding property that does not cause separation from the adhesive layer 13 at the time of dicing and does not cause defects such as chip jumping, and an adhesive at the time of pickup. Any material may be used as long as it can be easily separated from the layer 13.
  • the structure of the pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer 12 is not particularly limited, but in order to improve the pick-up property after dicing, an energy ray-curable material is preferable and cured. It is preferable that the material be easily peelable from the adhesive layer 13 later.
  • the pressure-sensitive adhesive composition contains 60 mol% or more of (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms as a base resin, and has an iodine value of 5 to 30.
  • the thing which has a polymer (A) which has a carbon-carbon double bond is illustrated.
  • the energy ray means a light ray such as ultraviolet rays or ionizing radiation such as an electron beam.
  • the amount of energy ray-curable carbon-carbon double bond introduced is 5 or more in terms of iodine value, it is excellent in that the effect of reducing the adhesive strength after irradiation with energy rays is enhanced. More preferably, it is 10 or more.
  • the iodine value is 30 or less, the holding power of the chip until it is picked up after irradiation with energy rays is high, and it is excellent in that it is easy to widen the chip gap at the time of expansion immediately before the picking process. It is preferable that the gap between the chips can be sufficiently widened before the pick-up process because image recognition of each chip at the time of pick-up is easy or pick-up becomes easy.
  • the amount of carbon-carbon double bonds introduced is an iodine value of 5 or more and 30 or less because the polymer (A) itself is stable and easy to produce.
  • the polymer (A) has a glass transition temperature of ⁇ 70 ° C. or higher in terms of heat resistance against heat accompanying energy beam irradiation, more preferably ⁇ 66 ° C. or higher. Further, if it is 15 ° C. or lower, it is excellent in the effect of preventing scattering of chips after dicing on a wafer having a rough surface state, more preferably 0 ° C. or lower, and further preferably ⁇ 28 ° C. or lower.
  • the polymer (A) may be produced by any method, for example, a polymer obtained by mixing an acrylic copolymer and a compound having an energy ray-curable carbon-carbon double bond, An acrylic copolymer having a functional group or a methacrylic copolymer having a functional group (A1), a functional group capable of reacting with the functional group, and an energy ray-curable carbon-carbon double bond What is obtained by reacting with a compound (A2) having a hydrogen atom is used.
  • a monomer (A1-1) having a carbon-carbon double bond such as an alkyl acrylate ester or an alkyl methacrylate ester
  • carbon Examples thereof include those obtained by copolymerizing a monomer (A1-2) having a carbon double bond and having a functional group.
  • Monomer (A1-1) includes hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, lauryl acrylate or alkyl chain having an alkyl chain having 6 to 12 carbon atoms Examples thereof include pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, and similar methacrylates, which are monomers having 5 or less carbon atoms.
  • a component having 6 or more carbon atoms in the alkyl chain in the monomer (A1-1) is excellent in pick-up property because it can reduce the peeling force between the pressure-sensitive adhesive layer and the adhesive layer.
  • a component of 12 or less has a low elastic modulus at room temperature and is excellent in terms of the adhesive force at the interface between the pressure-sensitive adhesive layer and the adhesive layer.
  • the glass transition temperature becomes lower as the monomer having a larger alkyl chain carbon number is used. Therefore, the pressure-sensitive adhesive composition having a desired glass transition temperature can be selected appropriately.
  • Product can be prepared.
  • a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene or acrylonitrile can be added for the purpose of improving various properties such as compatibility. In that case, these low molecular weight compounds are blended within a range of 5% by mass or less of the total mass of the monomer (A1-1).
  • examples of the functional group of the monomer (A1-2) include a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group.
  • the monomer (A1-2) Specific examples of acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N -Methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride Acid, glycidyl Relate, glycidyl methacrylate, it
  • examples of the functional group used include a hydroxyl group, an epoxy group, and an isocyanate group when the functional group of the compound (A1) is a carboxyl group or a cyclic acid anhydride group.
  • a hydroxyl group a cyclic acid anhydride group, an isocyanate group, and the like can be exemplified.
  • an amino group an epoxy group, an isocyanate group, and the like can be exemplified.
  • Carboxyl groups, cyclic acid anhydride groups, amino groups, and the like, and specific examples include those similar to those listed in the specific examples of the monomer (A1-2).
  • the compound (A2) a compound obtained by urethanizing a part of the isocyanate group of the polyisocyanate compound with a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond can also be used.
  • the hydroxyl value of the polymer (A) is 5 or more, it is excellent in terms of the effect of reducing the adhesive strength after irradiation with energy rays, and when it is 100 or less, it is excellent in terms of fluidity of the adhesive after irradiation with energy rays. .
  • the acid value is 0.5 or more, it is excellent in terms of tape recoverability, and when it is 30 or less, it is excellent in terms of fluidity of the pressure-sensitive adhesive.
  • ketone-based, ester-based, alcohol-based and aromatic-based solvents can be used, among which toluene, acetic acid
  • solvents for acrylic polymers such as ethyl, isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, and preferably a solvent having a boiling point of 60 to 120 ° C.
  • the polymerization initiator is ⁇ , ⁇ ′-azobis.
  • a radical generator such as an azobis type such as isobutyl nitrile or an organic peroxide type such as benzoyl peroxide is usually used.
  • a catalyst and a polymerization inhibitor can be used in combination, and the polymer (A) having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time.
  • a mercaptan or carbon tetrachloride solvent it is preferable to use. This reaction is not limited to solution polymerization, and may be another method such as bulk polymerization or suspension polymerization.
  • the polymer (A) can be obtained, but in the present invention, when the molecular weight of the polymer (A) is 300,000 or more, it is excellent in that the cohesive force can be increased.
  • the cohesive force is high, there is an effect of suppressing displacement at the interface with the adhesive layer at the time of expanding, and since the tensile force is easily transmitted to the adhesive layer, the splitting property of the adhesive layer is improved. Is preferable.
  • the molecular weight of the polymer (A) is 2 million or less, it is excellent in terms of suppressing gelation at the time of synthesis and coating.
  • the molecular weight in this invention is a mass mean molecular weight of polystyrene conversion.
  • the resin composition constituting the pressure-sensitive adhesive layer 12 may further contain a compound (B) that acts as a crosslinking agent in addition to the polymer (A).
  • a compound (B) that acts as a crosslinking agent in addition to the polymer (A).
  • Good examples thereof include polyisocyanates, melamine / formaldehyde resins, and epoxy resins, and these can be used alone or in combination of two or more.
  • This compound (B) reacts with the polymer (A) or the base film, and as a result, a pressure-sensitive adhesive mainly composed of the polymers (A) and (B) after coating the pressure-sensitive adhesive composition due to the resulting crosslinked structure. The cohesive strength of can be improved.
  • the polyisocyanates are not particularly limited, and examples thereof include 4,4′-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4′-diphenyl ether diisocyanate, 4,4 ′-[2,2-bis (4 -Phenoxyphenyl) propane] aromatic isocyanate such as diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate Lysine diisocyanate, lysine triisocyanate, and the like.
  • Coronate L (trade name, manufactured by Nippon Polyurethane Co., Ltd.) and the like are used. It can be.
  • Specific examples of the melamine / formaldehyde resin include Nicalac MX-45 (trade name, manufactured by Sanwa Chemical Co., Ltd.) and Melan (trade name, manufactured by Hitachi Chemical Co., Ltd.).
  • As the epoxy resin TETRAD-X (trade name, manufactured by Mitsubishi Chemical Corporation) or the like can be used. In the present invention, it is particularly preferable to use polyisocyanates.
  • the pressure-sensitive adhesive layer in which the amount of the compound (B) added is 0.1 parts by mass or more with respect to 100 parts by mass of the polymer (A) is excellent in terms of cohesive force. More preferably, it is 0.5 mass part or more.
  • the pressure-sensitive adhesive layer of 10 parts by mass or less is excellent in terms of rapid gelation suppression at the time of coating, and the workability such as the formulation and application of the pressure-sensitive adhesive is good. More preferably, it is 5 parts by mass or less.
  • the pressure-sensitive adhesive layer 12 may contain a photopolymerization initiator (C).
  • a photopolymerization initiator (C) contained in the adhesive layer 12 A conventionally well-known thing can be used.
  • benzophenones such as benzophenone, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone, 4,4′-dichlorobenzophenone, acetophenones such as acetophenone and diethoxyacetophenone, 2-ethylanthraquinone, t- And anthraquinones such as butylanthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triallylimidazole dimer (rophine dimer), acridine compounds and the like.
  • a photoinitiator (C) it is preferable to mix
  • the upper limit is preferably 10 parts by mass or less, and more preferably 5 parts by mass or less.
  • the energy ray-curable pressure-sensitive adhesive used in the present invention may contain a tackifier, a pressure-sensitive adhesive preparation agent, a surfactant, or other modifiers as necessary.
  • the pressure-sensitive adhesive layer 12 can be formed by using a conventional method for forming a pressure-sensitive adhesive layer. For example, a method of forming the pressure-sensitive adhesive composition on a predetermined surface of the base film 11 and a method of forming the pressure-sensitive adhesive composition into a separator (for example, a plastic film or sheet coated with a release agent)
  • the adhesive layer 12 can be formed on the base film 11 by a method of transferring the adhesive layer 12 to a predetermined surface of the base material after coating on the base film 11.
  • the pressure-sensitive adhesive layer 12 may have a single layer form or a laminated form.
  • the thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but if the thickness is 2 ⁇ m or more, it is excellent in terms of tack force, and more preferably 5 ⁇ m or more. When it is 15 ⁇ m or less, the pickup property is excellent, and 10 ⁇ m or less is more preferable.
  • the adhesive sheet 15 preferably has an elongation of 200% or more. Moreover, after extending to 200% of elongation, it is preferable that elongation is 120% or less by heating to 120 degreeC. By heating to 120 ° C., the elongation rate becomes 120% or less, and after dividing the adhesive layer 12 along the chip by the expand, the outer periphery of the chip of the semiconductor processing tape extended by the expand is heated. In the shrinking step, the shrinkage can be made properly. As a result, the chip interval can be maintained, and cracks due to collision between chips can be prevented. In order to make the elongation rate to be 120% or less by heating to 120 ° C. after the elongation rate is 200% or more and extending to 200% elongation, the base film 11 having such characteristics is used. Is preferably used.
  • the adhesive layer 13 is peeled off from the adhesive layer 12 and attached to the chip when the chip is picked up after the wafer is bonded and diced. And it is used as an adhesive agent when fixing a chip
  • the adhesive layer 13 is not particularly limited, but may be any film adhesive generally used for wafers, and examples thereof include those containing a thermoplastic resin and a thermopolymerizable component. .
  • the thermoplastic resin used for the adhesive layer 13 of the present invention is preferably a resin having thermoplasticity or a resin that has thermoplasticity in an uncured state and forms a crosslinked structure after heating, and is not particularly limited.
  • One embodiment is a thermoplastic resin having a weight average molecular weight of 5000 to 200,000 and a glass transition temperature of 0 to 150 ° C.
  • Another embodiment includes a thermoplastic resin having a weight average molecular weight of 100,000 to 1,000,000 and a glass transition temperature of ⁇ 50 to 20 ° C.
  • thermoplastic resin for example, polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyesterimide resin, phenoxy resin, polysulfone resin, polyethersulfone resin, polyphenylene sulfide resin, polyether ketone Among them, it is preferable to use a polyimide resin or a phenoxy resin, and it is preferable to use a polymer containing a functional group as the latter thermoplastic resin.
  • the polyimide resin can be obtained by a condensation reaction of tetracarboxylic dianhydride and diamine by a known method. That is, tetracarboxylic dianhydride and diamine are used in an organic solvent in equimolar or nearly equimolar amounts (the order of addition of each component is arbitrary), and the addition reaction is carried out at a reaction temperature of 80 ° C. or lower, preferably 0 to 60 ° C. As the reaction proceeds, the viscosity of the reaction solution gradually increases, and polyamic acid, which is a polyimide precursor, is generated. The molecular weight of the polyamic acid can be adjusted by heating at a temperature of 50 to 80 ° C. for depolymerization.
  • the polyimide resin can be obtained by dehydrating and ring-closing the reaction product (polyamic acid).
  • the dehydration ring closure can be performed by a thermal ring closure method in which heat treatment is performed and a chemical ring closure method using a dehydrating agent.
  • the tetracarboxylic dianhydride used as a raw material for the polyimide resin is not particularly limited.
  • the diamine used as a raw material for polyimide is not particularly limited, and examples thereof include o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 4 , 4′-diaminodiphenyl ether, 3,3′-diaminodiphenylmethane, 3,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylethermethane, bis (4-amino-3,5-dimethylphenyl) methane, bis (4 -Amino-3,5-diisopropylphenyl) methane, 3,3'-diaminodiphenyldifluoromethane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphen
  • Aliphatic diamines such as polyoxyalkylene diamines such as 0, ED-600, ED-900, ED-2001, and EDR-148 can be used, and one or more of these can be used in combination.
  • the glass transition temperature of the polyimide resin is preferably 0 to 200 ° C., and the weight average molecular weight is preferably 10,000 to 200,000.
  • R1 and R2 each represent a divalent hydrocarbon group having 1 to 30 carbon atoms, which may be the same or different, and R3 and R4 each represent a monovalent hydrocarbon group, which may be the same or different.
  • m is an integer of 1 or more
  • the phenoxy resin which is one of the preferred thermoplastic resins, is preferably a resin obtained by a method of reacting various bisphenols with epichlorohydrin or a method of reacting a liquid epoxy resin with bisphenol.
  • the phenoxy resin is similar in structure to the epoxy resin and therefore has good compatibility with the epoxy resin and is suitable for imparting good adhesiveness to the adhesive film.
  • Examples of the phenoxy resin used in the present invention include a resin having a repeating unit represented by the following general formula (2).
  • X represents a single bond or a divalent linking group.
  • the divalent linking group include an alkylene group, a phenylene group, —O—, —S—, —SO— or —SO 2 —.
  • the alkylene group is preferably an alkylene group having 1 to 10 carbon atoms, more preferably —C (R1) (R2) —.
  • R1 and R2 each represents a hydrogen atom or an alkyl group, and the alkyl group is preferably a linear or branched alkyl group having 1 to 8 carbon atoms, such as methyl, ethyl, n-propyl, isopropyl, isooctyl, 2-ethylhexyl. 1,3,3-trimethylbutyl and the like.
  • the alkyl group may be substituted with a halogen atom, and examples thereof include a trifluoromethyl group.
  • X represents an alkylene group, -O -, - S-, fluorene group or -SO 2 - is preferably an alkylene group, -SO 2 - is more preferred.
  • —C (CH 3 ) 2 —, —CH (CH 3 ) —, —CH 2 —, —SO 2 — is preferable, —C (CH 3 ) 2 —, —CH (CH 3 ) —, — CH 2 — is more preferred, and —C (CH 3 ) 2 — is particularly preferred.
  • the phenoxy resin represented by the general formula (2) has a repeating unit, even if it is a resin having a plurality of repeating units in which X in the general formula (2) is different, X is the same repeating unit. It may consist only of. In the present invention, a resin in which X is composed of only the same repeating unit is preferable.
  • the phenoxy resin represented by the general formula (2) contains a polar substituent such as a hydroxyl group or a carboxyl group, the compatibility with the thermopolymerizable component is improved and a uniform appearance and characteristics are imparted. be able to.
  • the film formability is excellent. More preferably, it is 10,000 or more, More preferably, it is 30,000 or more. Moreover, it is preferable that the mass average molecular weight is 150,000 or less in terms of fluidity at the time of thermocompression bonding and compatibility with other resins. More preferably, it is 100,000 or less.
  • the glass transition temperature is ⁇ 50 ° C. or higher
  • the film formability is excellent, more preferably 0 ° C. or higher, and further preferably 50 ° C. or higher.
  • the adhesive strength of the adhesive layer 13 at the time of die bonding is excellent, more preferably 120 ° C. or less, and further preferably 110 ° C. or less.
  • examples of the functional group in the polymer containing the functional group include a glycidyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, a carboxyl group, an isocyanurate group, an amino group, and an amide group.
  • a glycidyl group is preferable. .
  • the high molecular weight component containing the functional group examples include a (meth) acrylic copolymer containing a functional group such as a glycidyl group, a hydroxyl group, or a carboxyl group.
  • the (meth) acrylic copolymer for example, a (meth) acrylic ester copolymer, acrylic rubber or the like can be used, and acrylic rubber is preferable.
  • the acrylic rubber is a rubber mainly composed of an acrylate ester and mainly composed of a copolymer such as butyl acrylate and acrylonitrile, a copolymer such as ethyl acrylate and acrylonitrile, or the like.
  • the amount of the glycidyl group-containing repeating unit is preferably 0.5 to 6.0% by weight, more preferably 0.5 to 5.0% by weight, and 0.8 to 5 0.0% by weight is particularly preferred.
  • the glycidyl group-containing repeating unit is a constituent monomer of a (meth) acrylic copolymer containing a glycidyl group, and specifically, glycidyl acrylate or glycidyl methacrylate. When the amount of the glycidyl group-containing repeating unit is within this range, the adhesive force can be secured and gelation can be prevented.
  • Examples of the constituent monomer of the above (meth) acrylic copolymer other than glycidyl acrylate and glycidyl methacrylate include ethyl (meth) acrylate and butyl (meth) acrylate. These may be used alone or in combination of two or more. Can also be used.
  • ethyl (meth) acrylate refers to ethyl acrylate and / or ethyl methacrylate.
  • the mixing ratio in the case of using a combination of functional monomers may be determined in consideration of the glass transition temperature of the (meth) acrylic copolymer. A glass transition temperature of ⁇ 50 ° C.
  • the glass transition temperature is set to 30 ° C. or lower, the adhesive strength of the adhesive layer at the time of die bonding is excellent, and more preferably 20 ° C. or lower.
  • the polymerization method is not particularly limited, and for example, methods such as pearl polymerization and solution polymerization can be used. Is preferred.
  • the weight average molecular weight of the high molecular weight component containing a functional monomer is 100,000 or more, it is excellent in terms of film formability, more preferably 200,000 or more, and further preferably 500,000 or more. .
  • the weight average molecular weight is adjusted to 2,000,000 or less, it is excellent in that the heat fluidity of the adhesive layer at the time of die bonding is improved. Improving the heat fluidity of the adhesive layer during die bonding improves the adhesion between the adhesive layer and the adherend and improves the adhesion force. It also helps to suppress voids by filling the unevenness of the adherend. Become. More preferably, it is 1,000,000 or less, more preferably 800,000 or less, and if it is 500,000 or less, a still greater effect can be obtained.
  • thermopolymerizable component is not particularly limited as long as it is polymerized by heat.
  • functional groups such as glycidyl group, acryloyl group, methacryloyl group, hydroxyl group, carboxyl group, isocyanurate group, amino group, amide group, etc.
  • a compound having a group and a trigger material can be used, and these can be used alone or in combination of two or more.
  • heat resistance as an adhesive layer, it is cured by heat and has an adhesive action. It is preferable to contain the thermosetting resin which acts together with a curing agent and an accelerator.
  • thermosetting resin examples include an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin, and a urea resin, and in particular, heat resistance, workability, and reliability. It is most preferable to use an epoxy resin in terms of obtaining an adhesive layer having excellent resistance.
  • the epoxy resin is not particularly limited as long as it is cured and has an adhesive action, and is a bifunctional epoxy resin such as bisphenol A type epoxy, or a novolac type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolac type epoxy resin. Etc. can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.
  • Examples of the bisphenol A type epoxy resin include Epicoat series (Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat 1004, Epicoat 1007, Epicoat 1009) manufactured by Mitsubishi Chemical Corporation, Dow Examples thereof include DER-330, DER-301, DER-361 manufactured by Chemical Co., and YD8125, YDF8170 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.
  • Examples of the phenol novolac type epoxy resin include Epicoat 152 and Epicoat 154 manufactured by Mitsubishi Chemical Corporation, EPPN-201 manufactured by Nippon Kayaku Co., Ltd., DEN-438 manufactured by Dow Chemical Co., Ltd., and the above o-cresol.
  • Examples of the novolak type epoxy resin include EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027 manufactured by Nippon Kayaku Co., Ltd., YDCN701, YDCN702, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. YDCN703, YDCN704, etc. are mentioned.
  • Examples of the polyfunctional epoxy resin include Epon 1031S manufactured by Mitsubishi Chemical Corporation, Araldite 0163 manufactured by Ciba Specialty Chemicals, Denacol EX-611, EX-614, EX-614B, EX-622 manufactured by Nagase ChemteX Corporation.
  • EX-512 EX-521, EX-421, EX-411, EX-321, and the like.
  • amine type epoxy resin examples include Epicoat 604 manufactured by Mitsubishi Chemical Corporation, YH-434 manufactured by Tohto Kasei Co., Ltd., TETRAD-X and TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., and Sumitomo Chemical Industries, Ltd. ELM-120 and the like.
  • heterocyclic ring-containing epoxy resin include Araldite PT810 manufactured by Ciba Specialty Chemicals, ERL4234, ERL4299, ERL4221, and ERL4206 manufactured by UCC. These epoxy resins can be used alone or in combination of two or more.
  • additives can be appropriately added.
  • additives include a curing agent, a curing accelerator, a catalyst, and the like.
  • a catalyst When a catalyst is added, a promoter can be used as necessary.
  • an epoxy resin curing agent When using an epoxy resin for the thermosetting resin, it is preferable to use an epoxy resin curing agent or a curing accelerator, and it is more preferable to use these in combination.
  • the curing agent include phenol resin, dicyandiamide, boron trifluoride complex compound, organic hydrazide compound, amines, polyamide resin, imidazole compound, urea or thiourea compound, polymercaptan compound, and polysulfide resin having a mercapto group at the end. , Acid anhydrides, and light / ultraviolet curing agents. These can be used alone or in combination of two or more.
  • boron trifluoride complex compounds include boron trifluoride-amine complexes with various amine compounds (preferably primary amine compounds), and organic hydrazide compounds include isophthalic acid dihydrazide.
  • phenol resin examples include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, novolak type phenol resin such as nonylphenol novolak resin, resol type phenol resin, polyoxystyrene such as polyparaoxystyrene, etc. Can be mentioned. Of these, phenol compounds having at least two phenolic hydroxyl groups in the molecule are preferred.
  • phenol novolak resin examples include phenol novolak resin, cresol novolak resin, t-butylphenol novolak resin, dicyclopentagencresol novolak resin, dicyclopentadiene phenol novolak resin
  • examples include xylylene-modified phenol novolak resin, naphthol novolak resin, trisphenol novolak resin, tetrakisphenol novolak resin, bisphenol A novolak resin, poly-p-vinylphenol resin, and phenol aralkyl resin.
  • a phenol novolac resin and a phenol aralkyl resin are particularly preferable, and connection reliability can be improved.
  • amines examples include chain aliphatic amines (diethylenetriamine, triethylenetetramine, hexamethylenediamine, N, N-dimethylpropylamine, benzyldimethylamine, 2- (dimethylamino) phenol, 2,4,6-tris (dimethyl).
  • chain aliphatic amines diethylenetriamine, triethylenetetramine, hexamethylenediamine, N, N-dimethylpropylamine, benzyldimethylamine, 2- (dimethylamino) phenol, 2,4,6-tris (dimethyl).
  • cyclic aliphatic amines N-aminoethylpiperazine, bis (3-methyl-4-aminocyclohexyl) methane, bis (4-aminocyclohexyl) methane, mensendiamine, Phoronediamine, 1,3-bis (aminomethyl) cyclohexane, etc.), heterocyclic amines (piperazine, N, N-dimethylpiperazine, triethylenediamine, melamine, guanamine, etc.), aromatic amines (metaphenylenediamine, 4,4 ′) -Diaminodi Phenylmethane, diamino, 4,4′-diaminodiphenylsulfone, etc.), polyamide resin (polyamideamine is preferred, a condensation product of dimer acid and polyamine), imidazole compound (2-phenyl-4,5-dihydroxymethyl
  • the curing accelerator is not particularly limited as long as it cures a thermosetting resin.
  • imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl- Examples include 4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5.4.0] undecene-7-tetraphenylborate.
  • imidazoles examples include imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1 -Benzyl-2-ethylimidazole, 1-benzyl-2-ethyl-5-methylimidazole, 2-phenyl-4-methyl-5-hydroxydimethylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, etc. .
  • the content of the epoxy resin curing agent or curing accelerator in the adhesive layer is not particularly limited, and the optimum content varies depending on the type of curing agent or curing accelerator.
  • the blending ratio of the epoxy resin and the phenol resin is preferably blended so that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferably, it is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the characteristics of the adhesive layer are likely to deteriorate.
  • the other thermosetting resin and the curing agent are 0.5 to 20 parts by mass of the curing agent with respect to 100 parts by mass of the thermosetting resin. 1 to 10 parts by mass.
  • the content of the curing accelerator is preferably smaller than the content of the curing agent, and is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 0.1 parts by mass with respect to 100 parts by mass of the thermosetting resin. More preferred is 95 parts by mass. By adjusting within the said range, progress of sufficient hardening reaction can be assisted.
  • the content of the catalyst is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 1.0 parts by mass with respect to 100 parts by mass of the thermosetting resin.
  • the adhesive bond layer 13 of this invention can mix
  • the filler used in the present invention is preferably an inorganic filler.
  • the inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, and boron nitride. Crystalline silica, amorphous silica, antimony oxide, and the like can be used. These can be used alone or in combination of two or more.
  • alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferably used from the viewpoint of improving thermal conductivity.
  • aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica It is preferable to use amorphous silica or the like. From the viewpoint of improving dicing properties, it is preferable to use alumina or silica.
  • the wire bonding property is excellent.
  • the storage elastic modulus after curing of the adhesive layer bonding the chip for hitting the wire is adjusted to a range of 20 to 1000 MPa at 170 ° C., and the filler content is 30% by mass or more.
  • the filler content is 75% by mass or less, the film formability and the heat fluidity of the adhesive layer during die bonding are excellent. Improving the heat fluidity of the adhesive layer during die bonding improves the adhesion between the adhesive layer and the adherend and improves the adhesion force. It also helps to suppress voids by filling the unevenness of the adherend. Become. More preferably, it is 70 mass% or less, More preferably, it is 60 mass% or less.
  • the adhesive layer of the present invention can contain two or more fillers having different average particle diameters as the filler.
  • the average particle size of the filler is preferably 2.0 ⁇ m or less, and more preferably 1.0 ⁇ m.
  • the film can be easily thinned.
  • a thin film implies a thickness of 20 ⁇ m or less.
  • dispersibility is favorable in it being 0.01 micrometer or more.
  • the average particle size It is preferable to include a first filler having a primary particle diameter in the range of 0.005 to 0.03 ⁇ m and a first filler having a primary particle diameter in the range of 0.005 to 0.03 ⁇ m.
  • the average particle size in the present invention means the D50 value of the cumulative volume distribution curve in which 50% by volume of the particles have a smaller diameter than this value.
  • the average particle diameter or D50 value is measured by a laser diffraction method, for example, using a Malvern Mastersizer 2000 manufactured by Malvern Instruments.
  • the size of the particles in the dispersion is measured using laser beam diffraction based on either Fraunhofer or Mie theory applications.
  • Mie theory or modified Mie theory for non-spherical particles is used, and the average particle diameter or D50 value relates to scattering measurement at 0.02 to 135 ° with respect to the incident laser beam.
  • a thermoplastic resin having a weight average molecular weight of 5000 to 200,000 and 10 to 40% by mass with respect to the entire adhesive composition constituting the adhesive layer 13 is 10 to 40% by mass. And 30 to 75% by mass of filler.
  • the filler content may be 30 to 60% by mass, or 40 to 60% by mass.
  • the mass average molecular weight of the thermoplastic resin may be 5000 to 150,000, or 10,000 to 100,000.
  • the filler content may be 30 to 60% by mass, or 30 to 50% by mass.
  • the mass average molecular weight of the thermoplastic resin may be 200,000 to 1,000,000, or 200,000 to 800,000.
  • the storage elastic modulus and fluidity after curing of the adhesive layer 13 can be optimized, and heat resistance at high temperatures tends to be sufficiently obtained.
  • tear strength can be controlled.
  • the adhesive layer 13 has a tear strength (A) of 0.8 MPa or more in a right angle test method defined in JIS K7128-3.
  • A tear strength
  • the adhesive layer 13 is stretched in the pre-cut process for processing the adhesive layer 13 to a specified size, the adhesive The generation of cracks in the layer 13 can be reduced.
  • the adhesive layer 13 has a tear strength (B) of 0 mm when a cut portion having a length of 1 mm is inserted from the tip of the right-angle portion on the center line passing through the tip of the right-angle portion of the test piece in the right-angle test method. It is preferably 5 MPa or more. If the tear strength (B) is 0.5 MPa or more, even if it is cut by impact during transportation, etc., it can be suppressed to the minimum cut, and if it is a cut of that level, pre-cut In the process, the occurrence of cracks in the adhesive layer 13 when stretched can be reduced.
  • B tear strength
  • the adhesive layer 13 preferably has a tear strength (C) of ⁇ 0.8 MPa or less, and is 0.67 MPa or less in a right angle test method defined in JIS K7128-3 at ⁇ 15 ° C. Further preferred.
  • C tear strength
  • the adhesive tape 13 is expanded when the adhesive tape 13 is divided by expanding the semiconductor processing tape 10 by expanding in a low temperature region ( ⁇ 15 to 0 ° C.). Is well divided.
  • the filler content is 70% by mass or less, or the thermoplastic resin is included at 5% or more, thereby reducing the tear strength.
  • a filler containing a silane coupling agent or having a substantially spherical shape is used, compatibility and adhesion between the filler and the resin are improved, so that the tear strength can be increased.
  • the glass transition point of a thermoplastic resin is 15 degreeC or more and the molecular weight of a thermoplastic resin is 260,000 or less.
  • the adhesive layer 13 may be formed by laminating a film (hereinafter referred to as an adhesive film) directly or indirectly on the base film 11. .
  • the laminating temperature is preferably in the range of 10 to 100 ° C., and a linear pressure of 0.01 to 10 N / m is preferably applied.
  • Such an adhesive film may be one in which an adhesive layer 13 is formed on a release film. In this case, the release film may be released after lamination, or the semiconductor processing tape 10 may be used as it is. It may be used as a cover film and peeled when a wafer is bonded.
  • the said adhesive film may be laminated
  • the adhesive film according to a wafer is laminated
  • the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using a pre-cut adhesive film, and the ring is peeled off when the tape is peeled after use. The effect that the adhesive residue to the frame 20 hardly occurs is obtained.
  • the semiconductor processing tape 10 of the present invention is used in a method for manufacturing a semiconductor device including an expanding process for dividing the adhesive layer 13 by at least expansion. Therefore, other processes and the order of processes are not particularly limited. For example, it can be suitably used in the following semiconductor device manufacturing methods (A) to (E).
  • Manufacturing method of semiconductor device (A) (A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed; (B) a back grinding process for grinding the back surface of the wafer; (C) bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .; (D) peeling the surface protection tape from the wafer surface; (E) irradiating a laser beam to a portion to be divided of the wafer, and forming a modified region by multiphoton absorption inside the wafer; (F) Expanding the semiconductor processing tape to divide the wafer and the adhesive layer of the semiconductor processing tape along a cutting line to obtain a plurality of chips with the adhesive layer Process, (G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained; (H) picking up the chip with the adhesive layer from the adhesive layer of the
  • Manufacturing method of semiconductor device (B) (A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed; (B) a back grinding process for grinding the back surface of the wafer; (C) bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .; (D) peeling the surface protection tape from the wafer surface; (E) irradiating a laser beam along a cutting line on the wafer surface, and cutting the wafer into chips; (F) Expanding the semiconductor processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer; (G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained; (H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape; A method of manufacturing a semiconductor device including:
  • Manufacturing method of semiconductor device (C) (A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed; (B) a back grinding process for grinding the back surface of the wafer; (C) bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .; (D) peeling the surface protection tape from the wafer surface; (E) cutting the wafer along a cutting line using a dicing blade and cutting the wafer into chips; (F) Expanding the semiconductor processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer; (G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained; (H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape; A method of manufacturing a semiconductor device including:
  • Manufacturing method of semiconductor device (D) (A) bonding a dicing tape to the back surface of the wafer on which the circuit pattern is formed, and cutting the wafer to a depth less than the thickness of the wafer along a planned cutting line using a dicing blade; (B) bonding a surface protective tape to the wafer surface; (C) a back grinding process in which the dicing tape is peeled off and the back surface of the wafer is ground and divided into chips; (D) bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer divided into the chips while the wafer is heated to 70 to 80 ° C .; (E) peeling the surface protection tape from the wafer surface divided into the chips; (F) Expanding the semiconductor processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer; (G) In the semiconductor processing tape after expansion, removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the chip, and maintaining the interval between the chips;
  • Manufacturing method of semiconductor device (E) (A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed; (B) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption inside the wafer; (C) a back grinding process for grinding the back surface of the wafer; (D) bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .; (E) peeling the surface protection tape from the wafer surface; (F) Expanding the semiconductor processing tape to divide the wafer and the adhesive layer of the semiconductor processing tape along a cutting line to obtain a plurality of chips with the adhesive layer Process, (G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained; (H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing
  • a method of using the tape when the semiconductor processing tape 10 of the present invention is applied to the above-described semiconductor device manufacturing method (A) will be described with reference to FIGS.
  • a surface protection tape 14 for protecting a circuit pattern containing an ultraviolet curable component in an adhesive is bonded to the surface of a wafer W on which a circuit pattern is formed. Perform back grinding process to grind.
  • the wafer W is placed on the heater table 25 of the wafer mounter with the front side facing down, and then the semiconductor processing tape 10 is bonded to the back side of the wafer W.
  • the semiconductor processing tape 10 used here is obtained by laminating an adhesive film that has been cut (precut) in advance in a shape corresponding to the wafer W to be bonded, and an adhesive layer on the surface to be bonded to the wafer W.
  • the adhesive layer 12 is exposed around the area where 13 is exposed.
  • the portion of the semiconductor processing tape 10 where the adhesive layer 13 is exposed and the back surface of the wafer W are bonded together, and the portion where the adhesive layer 12 around the adhesive layer 13 is exposed and the ring frame 20 are bonded together.
  • the heater table 25 is set to 70 to 80 ° C., and thus heat bonding is performed.
  • the wafer W bonded with the semiconductor processing tape 10 is unloaded from the heater table 25 and placed on the suction table 26 with the semiconductor processing tape 10 side down as shown in FIG. Then, from the upper side of the wafer W sucked and fixed to the suction table 26, using the energy beam light source 27, for example, 1000 mJ / cm 2 of ultraviolet light is irradiated to the substrate surface side of the surface protective tape 14, The adhesive strength to the wafer W is reduced, and the surface protection tape 14 is peeled off from the surface of the wafer W.
  • a portion to be divided of the wafer W is irradiated with laser light to form a modified region 32 by multiphoton absorption inside the wafer W.
  • the semiconductor processing tape 10 to which the wafer W and the ring frame 20 are bonded is placed on the stage 21 of the expanding apparatus with the base film 11 side facing down. .
  • the hollow cylindrical push-up member 22 of the expanding device is raised to expand (expand) the semiconductor processing tape 10.
  • the expanding speed is, for example, 5 to 500 mm / sec
  • the expanding amount (push-up amount) is, for example, 5 to 25 mm.
  • the semiconductor processing tape 10 is stretched in the radial direction of the wafer W, whereby the wafer W is divided into chips 34 starting from the modified region 32.
  • the adhesive layer 13 elongation (deformation) due to expansion is suppressed at the portion bonded to the back surface of the wafer W, and no breakage occurs.
  • tension due to expansion of the tape is concentrated between the chips 34. And break. Therefore, as shown in FIG. 6C, the adhesive layer 13 is also cut off together with the wafer W. Thereby, the some chip
  • the push-up member 22 is returned to the original position, the slack of the semiconductor processing tape 10 generated in the previous expanding process is removed, and the distance between the chips 34 is stably maintained.
  • Perform the process for example, hot air of 90 to 120 ° C. is used in the annular heat shrinkage region 28 between the region where the chip 34 exists in the semiconductor processing tape 10 and the ring frame 20 by using the hot air nozzle 29.
  • hot air 90 to 120 ° C.
  • the adhesive layer 12 is subjected to an energy ray curing process or a thermosetting process to weaken the adhesive force of the adhesive layer 12 to the adhesive layer 13, and then the chip 34 is picked up.
  • the obtained film was irradiated with an electron beam of 100 kGy to produce a base film 2.
  • Base film 3 Styrene-butadiene copolymer (JSR Dynalon 1320P, styrene content: 10%, density: 0.89, MFR 3.5) and polypropylene (random polypropylene, ethylene content 1.4%, Mw 400,000, melting point 154 ° C., After dry blending resin pellets having a density of 0.91) at a ratio of 35:65, the pellets are melted at 200 ° C. and formed into a long film having a thickness of 100 ⁇ m using an extruder to produce a base film 3. did.
  • acrylic copolymer (a-1) As the acrylic copolymer (A1) having a functional group, a copolymer comprising 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, the ratio of 2-ethylhexyl acrylate being 60 mol%, and the weight average molecular weight being 700,000 was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value would be 20, and an acrylic copolymer (a-) having a glass transition temperature of ⁇ 50 ° C., a hydroxyl value of 10 mgKOH / g, and an acid value of 5 mgKOH / g. 1) was prepared.
  • (A-2) As the acrylic copolymer (A1) having a functional group, a copolymer composed of lauryl acrylate, 2-hydroxyethyl acrylate and methacrylic acid and having a lauryl acrylate ratio of 60 mol% and a mass average molecular weight of 800,000 was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value was 20, and an acrylic copolymer (a-) having a glass transition temperature of ⁇ 5 ° C., a hydroxyl value of 50 mgKOH / g, and an acid value of 5 mgKOH / g. 2) was prepared.
  • acrylic copolymer (A1) having a functional group a copolymer composed of butyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid and having a butyl acrylate ratio of 60 mol% and a mass average molecular weight of 800,000 was prepared.
  • 2-isocyanatoethyl methacrylate was added so that the iodine value was 20, and an acrylic copolymer (a-) having a glass transition temperature of ⁇ 40 ° C., a hydroxyl value of 30 mgKOH / g, and an acid value of 5 mgKOH / g. 3) was prepared.
  • (B-2) 40 parts by mass of epoxy resin “1002” (Mitsubishi Chemical Corporation, solid bisphenol A type epoxy resin, epoxy equivalent 600), epoxy resin “806” (trade name, bisphenol F type epoxy resin, epoxy equivalent 160 manufactured by Mitsubishi Chemical Corporation) , Specific gravity 1.20) 100 parts by weight, curing agent “Dyhard100SF” (trade name, manufactured by Degussa, dicyandiamide), silica filler “SO-C2” (trade name, manufactured by Admafine, average particle size 0.5 ⁇ m) MEK was added to a composition consisting of 200 parts by mass and 3 parts by mass of “Aerosil R972” (trade name, manufactured by Nippon Aerosil Co., Ltd., average particle diameter of primary particle size 0.016 ⁇ m) which is a silica filler, and stirred and mixed.
  • epoxy resin “1002” Mitsubishi Chemical Corporation, solid bisphenol A type epoxy resin, epoxy equivalent 600
  • epoxy resin “806” trade name, bisphenol F type epoxy resin, epoxy equivalent
  • a uniform composition was obtained.
  • 100 parts by mass of a phenoxy resin “PKHH” (trade name, INCHEM, mass average molecular weight 52,000, glass transition temperature 92 ° C.) and “KBM-802” (trade name, Mercapto, Shin-Etsu Silicone Co., Ltd.) as a coupling agent 0.6 parts by mass of propyltrimethoxysilane) and “Cureazole 2PHZ-PW” (trade name, 2-phenyl-4,5-dihydroxymethylimidazole, decomposition temperature 230 ° C., manufactured by Shikoku Kasei Co., Ltd.) as a curing accelerator 0.5 parts by mass was added and stirred and mixed until uniform. Further, this was filtered through a 100 mesh filter and vacuum degassed to obtain an adhesive composition b-2 varnish.
  • PKHH phenoxy resin
  • INCHEM mass average molecular weight 52,000, glass transition temperature 92 ° C.
  • KBM-802 trade name, Mercapto, Shin
  • Epoxy resin "1002" Mitsubishi Chemical Corporation, solid bisphenol A type epoxy resin, epoxy equivalent 600
  • epoxy resin "Epicoat 828” Mitsubishi Chemical Corporation product name, bisphenol A type epoxy resin, epoxy equivalent
  • hardener “Dyhard100SF” trade name, manufactured by Degussa, dicyandiamide
  • silica filler “SO-C2” trade name, manufactured by Admafine Co., Ltd., average particle size 0.5 ⁇ m
  • phenoxy resin “PKHH” (trade name, INCHEM, mass average molecular weight 52,000, glass transition temperature 92 ° C.), “KBM-802” (trade name, Shin-Etsu Silicone Co., Ltd., Mercapto) as a coupling agent 0.6 parts by mass of propyltrimethoxysilane) and “Cureazole 2PHZ-PW” (trade name, 2-phenyl-4,5-dihydroxymethylimidazole, decomposition temperature 230 ° C., manufactured by Shikoku Kasei Co., Ltd.) as a curing accelerator 0.5 parts by mass was added and stirred and mixed until uniform. Further, this was filtered through a 100-mesh filter and vacuum degassed to obtain an adhesive composition b-3 varnish.
  • (B-4) 15.0 parts by mass of epoxy resin “YX4000” (Mitsubishi Chemical Corporation, biphenyl novolac type epoxy resin, epoxy equivalent 185), phenol resin “LF-6161” (trade name, novolac phenol resin, hydroxyl equivalent 118 manufactured by DIC Corporation) ) 40.0 parts by mass, epoxy resin “Epicoat 828” (trade name, manufactured by Mitsubishi Chemical Corporation, bisphenol A type epoxy resin, epoxy equivalent 190), 45.0 parts by weight, silica filler “Aerosil R972” (Nippon Aerosil Co., Ltd.) MEK was added to a composition consisting of 5 parts by mass (trade name, average particle size 0.016 ⁇ m of the primary particle size), and mixed with stirring to obtain a uniform composition.
  • composition temperature 230 ° C. 0.1 part by mass of 5-dihydroxymethylimidazole (decomposition temperature 230 ° C.) was added and mixed with stirring until uniform. Further, this was filtered through a 100-mesh filter and vacuum degassed to obtain an adhesive composition b-4 varnish.
  • Epoxy resin "1002" Mitsubishi Chemical Corporation, solid bisphenol A type epoxy resin, epoxy equivalent 600
  • epoxy resin "Epicoat 828” Mitsubishi Chemical Corporation product name, bisphenol A type epoxy resin, epoxy equivalent
  • hardener “Dyhard100SF” Degussa product name, dicyandiamide
  • silica filler “SO-C2” product name, average particle size 0.5 ⁇ m, manufactured by Admafine Co., Ltd.
  • phenoxy resin “PKHH” (trade name, INCHEM, mass average molecular weight 52,000, glass transition temperature 92 ° C.) and “KBM-802” (trade name, Mercapto, manufactured by Shin-Etsu Silicone Co., Ltd.) as a coupling agent 0.6 parts by mass of propyltrimethoxysilane) and “Cureazole 2PHZ-PW” (trade name, 2-phenyl-4,5-dihydroxymethylimidazole, decomposition temperature 230 ° C., manufactured by Shikoku Kasei Co., Ltd.) as a curing accelerator 0.5 parts by mass was added and stirred and mixed until uniform. Further, this was filtered through a 100 mesh filter and vacuum degassed to obtain an adhesive composition b-5 varnish.
  • PKHH phenoxy resin
  • INCHEM mass average molecular weight 52,000, glass transition temperature 92 ° C.
  • KBM-802 trade name, Mercapto, manufactured by Shin-Etsu Silicone Co., Ltd
  • Epoxy resin "1002" (Mitsubishi Chemical Corporation, solid bisphenol A type epoxy resin, epoxy equivalent 600) 20 parts by mass, epoxy resin "Epicoat 828" (Mitsubishi Chemical Corporation product name, bisphenol A type epoxy resin, epoxy equivalent) 190) 20 parts by mass, hardener “Dyhard100SF” (Degussa product name, dicyandiamide) 10 parts by mass, silica filler “SO-C2” (product name, average particle size 0.5 ⁇ m, manufactured by Admafine Co., Ltd.) 250 parts by mass MEK was added to the resulting composition and mixed by stirring to obtain a uniform composition.
  • an acrylic copolymer (weight average molecular weight 150,000) containing a monomer unit derived from glycidyl acrylate or glycidyl methacrylate as a polymer containing a functional group, and “KBM-802” as a coupling agent (Shin-Etsu Silicone Co., Ltd.) Company product name, mercaptopropyltrimethoxysilane (0.6 parts by mass) and “Cureazole 2PHZ-PW” (trade name, 2-phenyl-4,5-dihydroxymethylimidazole, manufactured by Shikoku Kasei Co., Ltd.) as a curing accelerator , Decomposition temperature 230 ° C.) 0.5 parts by mass was added and stirred and mixed until uniform. Further, this was filtered through a 100-mesh filter and vacuum degassed to obtain an adhesive composition b-6 varnish.
  • Example 1 5 parts by weight of Coronate L (manufactured by Nippon Polyurethane) as a polyisocyanate is added to 100 parts by weight of the acrylic copolymer (a-1), and 3 parts by weight of Esacure KIP 150 (manufactured by Lamberti) as a photopolymerization initiator. The added mixture was dissolved in ethyl acetate and stirred to prepare a pressure-sensitive adhesive composition. Next, this pressure-sensitive adhesive composition was applied to a release liner comprising a release-treated polyethylene-terephthalate film so that the thickness after drying was 10 ⁇ m, and dried at 110 ° C. for 3 minutes. A pressure-sensitive adhesive sheet in which a pressure-sensitive adhesive layer was formed on a base film was prepared by bonding to film 1.
  • Coronate L manufactured by Nippon Polyurethane
  • Esacure KIP 150 manufactured by Lamberti
  • the adhesive composition (b-1) was applied to a release liner made of a polyethylene-terephthalate film subjected to a release treatment so that the thickness after drying was 20 ⁇ m, and dried at 110 ° C. for 5 minutes.
  • a release liner made of a polyethylene-terephthalate film subjected to a release treatment so that the thickness after drying was 20 ⁇ m, and dried at 110 ° C. for 5 minutes.
  • the adhesive sheet was cut into the shape shown in FIG. 3 and the like that can be bonded to the ring frame so as to cover the opening. Moreover, the adhesive film was cut into the shape shown in FIG. Then, the adhesive layer side of the adhesive sheet and the adhesive layer side of the adhesive film are pasted so that a portion where the adhesive layer 12 is exposed is formed around the adhesive film as shown in FIG. In addition, a semiconductor processing tape was produced.
  • Examples 2 to 6 Comparative Example 1> A semiconductor processing tape was produced in the same manner as in Example 1 except that the combinations of the acrylic copolymer, the pressure-sensitive adhesive composition, and the adhesive composition were changed to the combinations shown in Tables 1 and 2.
  • a surface protection tape was bonded to the wafer surface on which the circuit pattern was formed.
  • B A back grinding process for grinding the wafer back surface was performed.
  • C With the wafer heated to 70 ° C., the adhesive layer of the semiconductor processing tape is bonded to the back surface of the wafer, and at the same time, the ring frame for semiconductor processing is attached to the adhesive layer of the semiconductor processing tape. It bonded with the exposed part, without overlapping with an adhesive bond layer.
  • D) The surface protection tape was peeled from the wafer surface.
  • the semiconductor processing tape was expanded by 10% to divide the wafer and the adhesive layer along a dividing line, and a plurality of chips with the adhesive layer were obtained.
  • G In the expanding step of (f), the portion of the semiconductor processing tape that does not overlap with the chip (the annular region between the chip and the ring frame) is heated to 120 ° C. and contracted. The resulting slack was removed and the tip spacing was maintained.
  • H The chip with the adhesive layer was picked up from the adhesive layer of the semiconductor processing tape.
  • step (f) the dicing ring frame bonded to the semiconductor processing tape with DDS-2300 manufactured by DISCO Corporation is pushed down by the expanding ring of DDS-2300 manufactured by DISCO Corporation for semiconductor processing.
  • the expansion was carried out by pressing a portion of the outer periphery of the wafer bonding portion of the tape that did not overlap the wafer against a circular push-up member.
  • the expanding speed was 300 mm / sec
  • the expanding amount (push-up amount) was 20 mm.
  • the amount of expansion refers to the amount of change in the relative position between the ring frame and the push-up member before and after pressing.
  • the tear strength (A) in the right angle test method defined in JIS K7128-3 of the adhesive layer is 1.11 or more. Since it is 0.8 MPa or more as defined in the claims, the precut workability was good.
  • the semiconductor processing tape according to Examples 1 to 4 and 6 is a cut part having a length of 1 mm from the tip of the right-angle portion on the center line passing through the right-angle tip of the test piece in the right-angle test method of the adhesive layer. Since the tearing strength (B) when adding was 0.5 MPa or more, the precut workability was extremely excellent.
  • the semiconductor processing tape according to Comparative Example 1 is inferior in precut processability because the tear strength (A) of the adhesive layer is less than 0.8 MPa. It was.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Laminated Bodies (AREA)
  • Laser Beam Processing (AREA)
PCT/JP2015/074338 2014-09-05 2015-08-28 半導体加工用テープ及びこれを使用して製造した半導体装置 WO2016035687A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201580046165.5A CN106663617B (zh) 2014-09-05 2015-08-28 半导体加工用带及使用此所制造的半导体装置
KR1020177005291A KR101828226B1 (ko) 2014-09-05 2015-08-28 반도체 가공용 테이프 및 이것을 사용하여 제조한 반도체 장치
SG11201701479TA SG11201701479TA (en) 2014-09-05 2015-08-28 Adhesive tape for semiconductor processing and semiconductor device produced using the same
PH12017500394A PH12017500394A1 (en) 2014-09-05 2017-03-02 Adhesive tape for semiconductor processing and semiconductor device produced using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014181752A JP5863914B1 (ja) 2014-09-05 2014-09-05 半導体加工用テープ及びこれを使用して製造する半導体装置の製造方法
JP2014-181752 2014-09-05

Publications (1)

Publication Number Publication Date
WO2016035687A1 true WO2016035687A1 (ja) 2016-03-10

Family

ID=55346911

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/074338 WO2016035687A1 (ja) 2014-09-05 2015-08-28 半導体加工用テープ及びこれを使用して製造した半導体装置

Country Status (8)

Country Link
JP (1) JP5863914B1 (zh)
KR (1) KR101828226B1 (zh)
CN (1) CN106663617B (zh)
MY (1) MY168988A (zh)
PH (1) PH12017500394A1 (zh)
SG (1) SG11201701479TA (zh)
TW (1) TWI591701B (zh)
WO (1) WO2016035687A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116544151A (zh) * 2023-07-05 2023-08-04 砺铸智能设备(天津)有限公司 一种用于芯片的检测、封装设备

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7471879B2 (ja) * 2020-03-18 2024-04-22 リンテック株式会社 フィルム状接着剤及びダイシングダイボンディングシート
CN114615835A (zh) * 2022-04-26 2022-06-10 生益电子股份有限公司 一种阶梯式线路板及其制作方法、双层胶带

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019962A (ja) * 2003-06-06 2005-01-20 Hitachi Chem Co Ltd 接着シート
JP2009164556A (ja) * 2007-12-11 2009-07-23 Furukawa Electric Co Ltd:The ウエハ加工用テープ
JP2011071492A (ja) * 2009-08-25 2011-04-07 Furukawa Electric Co Ltd:The ウエハ加工用テープ
JP2012028598A (ja) * 2010-07-26 2012-02-09 Furukawa Electric Co Ltd:The ウエハ加工用テープ
WO2014017537A1 (ja) * 2012-07-26 2014-01-30 古河電気工業株式会社 半導体ウエハ加工用テープの製造方法及び半導体ウエハ加工用テープ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4358502B2 (ja) 2002-03-12 2009-11-04 浜松ホトニクス株式会社 半導体基板の切断方法
JP2004273895A (ja) 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
CN100454493C (zh) * 2003-06-06 2009-01-21 日立化成工业株式会社 粘合片、与切割胶带一体化粘合片以及半导体的制造方法
JP4754278B2 (ja) 2005-06-23 2011-08-24 リンテック株式会社 チップ体の製造方法
JP4979063B2 (ja) * 2006-06-15 2012-07-18 日東電工株式会社 半導体装置の製造方法
CN102373017A (zh) * 2010-08-19 2012-03-14 古河电气工业株式会社 晶片加工用胶带

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019962A (ja) * 2003-06-06 2005-01-20 Hitachi Chem Co Ltd 接着シート
JP2009164556A (ja) * 2007-12-11 2009-07-23 Furukawa Electric Co Ltd:The ウエハ加工用テープ
JP2011071492A (ja) * 2009-08-25 2011-04-07 Furukawa Electric Co Ltd:The ウエハ加工用テープ
JP2012028598A (ja) * 2010-07-26 2012-02-09 Furukawa Electric Co Ltd:The ウエハ加工用テープ
WO2014017537A1 (ja) * 2012-07-26 2014-01-30 古河電気工業株式会社 半導体ウエハ加工用テープの製造方法及び半導体ウエハ加工用テープ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116544151A (zh) * 2023-07-05 2023-08-04 砺铸智能设备(天津)有限公司 一种用于芯片的检测、封装设备
CN116544151B (zh) * 2023-07-05 2023-09-19 砺铸智能设备(天津)有限公司 一种用于芯片的检测、封装设备

Also Published As

Publication number Publication date
SG11201701479TA (en) 2017-03-30
PH12017500394B1 (en) 2017-07-17
TWI591701B (zh) 2017-07-11
JP5863914B1 (ja) 2016-02-17
TW201616560A (zh) 2016-05-01
CN106663617B (zh) 2018-05-29
MY168988A (en) 2019-01-29
JP2016058458A (ja) 2016-04-21
PH12017500394A1 (en) 2017-07-17
CN106663617A (zh) 2017-05-10
KR101828226B1 (ko) 2018-02-09
KR20170030645A (ko) 2017-03-17

Similar Documents

Publication Publication Date Title
JP6230730B2 (ja) 半導体加工用テープ
JP6097893B2 (ja) 半導体加工用テープ
WO2019187184A1 (ja) 半導体加工用テープ
WO2016035687A1 (ja) 半導体加工用テープ及びこれを使用して製造した半導体装置
JP7129375B2 (ja) 半導体加工用テープ
KR102505646B1 (ko) 유리 가공용 테이프
JP7269096B2 (ja) ガラス加工用テープ
JP6535138B1 (ja) 半導体加工用テープ
JP6989563B2 (ja) 半導体加工用テープ
JP6535118B1 (ja) 半導体加工用テープ
WO2019187185A1 (ja) 半導体加工用テープ
KR102505582B1 (ko) 유리 가공용 테이프
JP7269095B2 (ja) ガラス加工用テープ
JP6989561B2 (ja) 半導体加工用テープ
JP2019176157A (ja) 半導体加工用テープ

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15838055

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20177005291

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12017500394

Country of ref document: PH

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15838055

Country of ref document: EP

Kind code of ref document: A1