WO2016026174A1 - 蚀刻速率测试控片的制作方法与重复利用方法 - Google Patents

蚀刻速率测试控片的制作方法与重复利用方法 Download PDF

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Publication number
WO2016026174A1
WO2016026174A1 PCT/CN2014/086255 CN2014086255W WO2016026174A1 WO 2016026174 A1 WO2016026174 A1 WO 2016026174A1 CN 2014086255 W CN2014086255 W CN 2014086255W WO 2016026174 A1 WO2016026174 A1 WO 2016026174A1
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metal film
etch rate
photoresist layer
rate test
test piece
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PCT/CN2014/086255
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English (en)
French (fr)
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高冬子
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深圳市华星光电技术有限公司
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Publication of WO2016026174A1 publication Critical patent/WO2016026174A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor

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  • the present invention relates to the field of flat display technologies, and in particular, to a method for fabricating an etch rate test piece and a method for recycling the same.
  • the flat display device has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • the existing flat display devices mainly include a liquid crystal display (LCD) and an organic light emitting display (OLED).
  • a TFT (Thin Film Transistor) substrate is an important component of an LCD or an OLED.
  • the TFT substrate includes a glass substrate, and a gate, a gate insulating layer, a semiconductor layer, a source/drain, a protective layer, a flat layer, a pixel electrode, a pixel defining layer, and the like on the glass substrate.
  • the film layer, wherein the gate insulating layer, the semiconductor layer, the protective layer, the flat layer, the pixel defining layer, and the like are all non-metal film layers.
  • the non-metal film layer is etched using a dry etching device to obtain a pattern required for each non-metal film layer, such as a via for connecting the ITO pixel electrode to the source/drain, that is, by dry etching
  • a dry etching device to obtain a pattern required for each non-metal film layer, such as a via for connecting the ITO pixel electrode to the source/drain, that is, by dry etching
  • the non-metal film located at the via position is etched away, so that the source/drain electrodes can be contacted and electrically connected to the ITO pixel electrode for the purpose of transmitting signals for display.
  • the etch rate test is an indispensable step in setting the process parameters of the dry etching equipment and the equipment after the maintenance, so the etch rate test piece is used in a large amount.
  • the method of using the existing etch rate test piece is generally performed by measuring the thickness of the non-metal film layer before and after dry etching, and calculating the etch rate in combination with the etching time.
  • the existing etch rate test piece is scrapped only once, and the glass substrate is also scrapped, resulting in a huge waste of production cost, and the etch rate test piece is produced for a long time, which affects production efficiency.
  • the object of the present invention is to provide a method for recycling an etch rate test piece, which can repeatedly use the same etch rate test piece, greatly improve the utilization rate of the glass substrate, reduce the production cost, and shorten the etch rate test control.
  • the production time of the film increases the production efficiency.
  • the present invention provides a method for fabricating an etch rate test piece, Including the following steps:
  • Step 1 providing a glass substrate, and forming a metal layer pattern on the glass substrate;
  • Step 2 depositing a non-metal film on the metal layer pattern and the glass substrate, the non-metal film completely covering the substrate;
  • Step 3 Apply a photoresist layer on the non-metal film and expose it, and expose a portion of the photoresist layer corresponding to the non-metal film to form a test via hole to expose the non-metal film.
  • the step 1 forms a metal layer pattern by a film formation, exposure, etching, and lift-off process.
  • the material of the non-metal film is silicon nitride.
  • the invention also provides a method for recycling an etch rate test piece, comprising the following steps:
  • Step 10 providing a used etch rate test piece
  • the used etch rate test piece includes a glass substrate, a metal layer pattern on the glass substrate, a non-metal film on the metal layer pattern and the glass substrate, and a photoresist layer on the non-metal film;
  • the metal film has at least one test via that has been etched;
  • Step 20 removing all the photoresist layers
  • Step 30 applying another photoresist layer on the non-metal film, and exposing the exposure position to the etched test via to expose the other photoresist layer, corresponding to the non-metal film to be formed Another portion of the test photoresist is exposed to another photoresist layer to expose a non-metallic film;
  • Step 40 using a film thickness measuring device to measure the thickness H1 of the non-metal film not covered by the other photoresist layer;
  • Step 50 etching a non-metal film not covered by another photoresist layer for a certain time T to form another test via hole;
  • the other test via is offset from the test via that has been etched
  • Step 60 After the etching is completed, the thickness H2 of the non-metal film under the other test via is measured using a film thickness measuring device; and the etching rate V is calculated according to the thicknesses H1 and H2 of the non-metal film and the etching time T.
  • the used etch rate test piece is produced using the following steps:
  • Step 100 providing a glass substrate, and forming a metal layer pattern on the glass substrate;
  • Step 200 depositing a non-metal film on the metal layer pattern and the glass substrate, the non-metal film completely covering the substrate;
  • a photoresist layer is coated on the non-metal film and exposed to expose a portion of the photoresist layer corresponding to the non-metal film to form a test via hole to expose the non-metal film.
  • the step 100 forms a metal layer pattern by a film forming, exposure, etching, and lift-off process.
  • the material of the non-metal film is silicon nitride.
  • the photoresist is cleaned by the photoresist stripping device, so that the photoresist layer is completely Part removed.
  • the step 30 uses the function of the exposure device to accurately control the coincidence accuracy of the pattern to deviate the exposure position.
  • the present invention provides an etching rate test piece manufacturing method and a recycling method, by removing an exposed photoresist layer on a non-metal film, and then coating another photoresist layer, and The exposure position is offset from the already etched test via to expose the other photoresist layer, so that another test via formed by etching the non-metal film can be used for another etch rate test, thereby enabling the same etch rate test slice Reuse multiple times, greatly improve the utilization rate of the glass substrate, reduce the production cost, and at the same time shorten the production time of the etching rate test piece and improve the production efficiency.
  • FIG. 1 is a flow chart of a method for fabricating an etch rate test control sheet of the present invention
  • step 1 is a schematic diagram of step 1 of a method for fabricating an etch rate test piece according to the present invention
  • step 2 is a schematic diagram of step 2 of a method for fabricating an etch rate test piece according to the present invention
  • step 3 is a schematic diagram of step 3 of a method for fabricating an etch rate test piece according to the present invention.
  • FIG. 5 is a flow chart of a method for recycling an etch rate test piece according to the present invention.
  • step 10 is a schematic diagram of step 10 of a method for recycling an etch rate test piece according to the present invention.
  • FIG. 7 is a schematic diagram of a step 20 of a method for recycling an etch rate test piece according to the present invention.
  • FIG. 8 is a schematic diagram of a step 30 of a method for recycling an etch rate test piece according to the present invention.
  • FIG. 9 is a schematic diagram of a step 40 of a method for recycling an etch rate test piece according to the present invention.
  • FIG. 10 is a schematic diagram of a step 50 of a method for recycling an etch rate test piece according to the present invention.
  • Figure 11 is a schematic illustration of the step 60 of the method of recycling the etch rate test panel of the present invention.
  • the present invention firstly provides a method for fabricating an etch rate test piece, and the method includes the following steps:
  • Step 1 as shown in FIG. 2, a glass substrate 1 is provided, and a metal layer pattern 2 is formed on the glass substrate 1 by a film forming, exposure, etching, and lift-off process.
  • the metal layer pattern 2 is mainly used as an alignment pattern of the exposure device to facilitate control of the exposure position.
  • Step 2 As shown in FIG. 3, a non-metal film 3 is deposited on the metal layer pattern 2 and the glass substrate 1, and the non-metal film 3 completely covers the substrate 1.
  • the thickness of the non-metal film 3 is large to prevent it from being etched through during the etching test.
  • the material of the non-metal film 3 is silicon nitride.
  • Step 3 as shown in FIG. 4, coating a photoresist layer 4 on the non-metal film 3 and exposing the photoresist layer 4 using an exposure device, which corresponds to the position of the non-metal film 3 to be formed at the test via hole. Part of the photoresist layer 4 is exposed to expose the non-metal film 3.
  • the etch rate test piece When the etch rate test piece is used for the etch rate test, the non-metal film 3 not covered by the photoresist layer 4 is etched for a certain time by an etching device to form a test via hole, and the test via hole is measured before and after the etch.
  • the etching rate can be calculated by combining the thickness of the non-metal film with the etching time.
  • the etch rate test piece prepared by the above manufacturing method can be used as the alignment pattern of the exposure device to facilitate the control of the exposure position, so that the photoresist layer can be first after the etch rate test is completed. 4 removing, re-coating a layer of photoresist, exposing at a position deviating from the etched test via to perform the etch rate test again, thus passing The etch rate test pads fabricated by this method can be reused.
  • the present invention further provides a method for recycling an etch rate test piece, which includes the following steps:
  • Step 10 As shown in FIG. 6, a used etch rate test pad is provided.
  • the used etch rate test piece includes a glass substrate 1, a metal layer pattern 2 on the glass substrate 1, a non-metal film 3 on the metal layer pattern 2 and the glass substrate 1, and a non-metal film 3.
  • the photoresist layer 4; the non-metal film 3 has at least one test via 31 that has been etched.
  • the used etch rate test piece is produced by the following steps:
  • Step 100 providing a glass substrate 1, and forming a metal layer pattern 2 on the glass substrate 1 by a film forming, exposure, etching, stripping process;
  • Step 200 depositing a non-metal film 3 on the metal layer pattern 2 and the glass substrate 1, the non-metal film 3 completely covering the substrate 1; in step 300, coating a photoresist layer 4 on the non-metal film 3 and performing exposure, A portion of the photoresist layer 4 corresponding to the position of the non-metal film 3 to be formed at the test via is exposed to expose the non-metal film 3.
  • the thickness of the non-metal film 3 is large to prevent it from being etched through during the etching test.
  • the material of the non-metal film 3 is silicon nitride.
  • Step 20 As shown in FIG. 7, the photoresist is cleaned by a photoresist stripping device, thereby completely removing the photoresist layer 4.
  • Step 30 as shown in FIG. 8, coating another photoresist layer 4' on the non-metal film 3, and using the function of accurately controlling the pattern coincidence precision of the exposure device to deviate the exposure position, avoiding having been etched
  • the via 31 is tested, and the other photoresist layer 4' is exposed at a position deviating from the etched test via 31, which corresponds to the position of the non-metal film 3 to form another test via 32.
  • a portion of the other photoresist layer 4' is exposed to expose a complete non-metal film 3 that has not been etched.
  • Step 40 as shown in Fig. 9, the thickness H1 of the non-metal film 3 not covered by the other photoresist layer 4' is measured using a film thickness measuring device.
  • Step 50 as shown in Fig. 10, the non-metal film 3 not covered by the other photoresist layer 4' is etched for a certain time T using an etching device to form another test via 32.
  • test via 32 is offset from the test via 31 that has been etched.
  • Step 60 as shown in FIG. 11, after the etching is completed, the thickness H2 of the non-metal film 3 remaining under the other test via 32 is measured using a film thickness measuring device.
  • the etching rate V is calculated according to the thicknesses H1 and H2 of the metal film 3 and the etching time T, which is the basis for setting the etching time of the normal product.
  • the above-mentioned recycling method can be used to repeatedly reuse the etching rate test piece, thereby greatly improving the utilization rate of the glass substrate and reducing the production cost, and the recycling process is omitted.
  • the fabrication of the metal layer pattern 2 and the non-metal film 3 can shorten the fabrication time of the etching rate test piece and improve the production efficiency.
  • the present invention provides an etch rate test piece manufacturing method and a recycling method by removing an exposed photoresist layer on a non-metal film, coating another photoresist layer, and exposing Positioning off the etched test via exposes the other photoresist layer such that another test via formed by etching the non-metal film can be used for another etch rate test, thereby enabling the same etch rate test slice to be repeated By using it multiple times, the utilization rate of the glass substrate is greatly improved, the production cost is reduced, and the production time of the etching rate test piece is shortened, and the production efficiency is improved.

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  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

一种蚀刻速率测试控片的制作方法与重复利用方法，该重复利用方法包括如下步骤：步骤10、提供一已使用过的蚀刻速率测试控片；步骤20、将光阻层（4）全部去除；步骤30、在非金属膜（3）上涂布另一光阻层（4'），将曝光位置偏离所述已被蚀刻过的测试过孔（31）对该另一光阻层（4'）进行曝光；步骤40、测量未被所述另一光阻层（4'）覆盖的非金属膜（3）的厚度H1；步骤50、对未被另一光阻层（4'）覆盖的非金属膜（3）进行一定时间T的蚀刻，形成另一测试过孔（32）；步骤60、蚀刻完成后，测量位于另一测试过孔（32）下方的非金属膜（3）的厚度H2；并根据非金属膜（3）的厚度H1与H2、及蚀刻时间T计算蚀刻速率V。

Description

蚀刻速率测试控片的制作方法与重复利用方法 技术领域
本发明涉及平面显示技术领域，尤其涉及一种蚀刻速率测试控片的制作方法与重复利用方法。
背景技术
平面显示器件具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的平面显示器件主要包括液晶显示器件(Liquid Crystal Display，LCD)及有机电致发光显示器件(Organic Light Emitting Display，OLED)。
TFT(Thin Film Transistor)基板是LCD、OLED的重要组成部分。以LCD为例，其TFT基板包括玻璃基板、及位于该玻璃基板上的栅极、栅极绝缘层、半导体层、源/漏极、保护层、平坦层、像素电极、像素定义层等多个膜层，其中栅极绝缘层、半导体层、保护层、平坦层、像素定义层等均为非金属膜层。在TFT基板的制程过程中，使用干蚀刻设备对非金属膜层进行蚀刻，以得到各非金属膜层所需的图案，如供ITO像素电极与源/漏极连接的过孔即通过干蚀刻将位于过孔位置的非金属膜蚀刻掉，从而可以使源/漏极接触并电性连接ITO像素电极，达到传递信号进行显示的目的。
现有技术条件下，在使用干蚀刻设备蚀刻非金属膜的过程中，无法监控位于孔位置的非金属膜层是否被完全蚀刻掉，只能通过对一控片进行蚀刻速率测试的方法来计算出完全蚀刻掉位于孔位置的非金属膜层所需要的时间。
蚀刻速率的测试是干蚀刻设备工艺参数设定、设备保养后复机必不可少的步骤，因此蚀刻速率测试控片的用量很大。现有的蚀刻速率测试控片的使用方法一般通过测量非金属膜层进行干蚀刻前后的的厚度，结合蚀刻时间来计算蚀刻速率。但该现有的蚀刻速率测试控片仅使用一次就要报废，玻璃基板也随之报废，造成了生产成本的巨大浪费，且制作该蚀刻速率测试控片的时间较长，影响生产效率。
发明内容
本发明的目的在于提供一种蚀刻速率测试控片的制作方法，应用该方法制作的蚀刻速率测试控片能够被重复利用。
本发明的目的还在于提供一种蚀刻速率测试控片的重复利用方法，能够将同一蚀刻速率测试控片重复利用多次，大幅提高玻璃基板的利用率，降低生产成本，同时缩短蚀刻速率测试控片的制作时间，提高生产效率。
为实现上述目的，本发明提供一种蚀刻速率测试控片的制作方法，包 括如下步骤：
步骤1、提供一玻璃基板，并在该玻璃基板上形成金属层图形；
步骤2、在金属层图形与玻璃基板上沉积非金属膜，该非金属膜完全覆盖基板；
步骤3、在非金属膜上涂布一光阻层并进行曝光，将对应于非金属膜欲形成测试过孔位置上的部分光阻层曝掉，露出非金属膜。
所述步骤1通过成膜、曝光、蚀刻、剥离工艺形成金属层图形。
所述非金属膜的材料为氮化硅。
本发明还提供一种蚀刻速率测试控片的重复利用方法，包括如下步骤：
步骤10、提供一已使用过的蚀刻速率测试控片；
该已使用过的蚀刻速率测试控片包括玻璃基板、位于玻璃基板上的金属层图形、位于金属层图形与玻璃基板上的非金属膜、及位于非金属膜上的光阻层；所述非金属膜具有至少一个已被蚀刻过的测试过孔；
步骤20、将所述光阻层全部去除；
步骤30、在所述非金属膜上涂布另一光阻层，将曝光位置偏离所述已被蚀刻过的测试过孔对该另一光阻层进行曝光，将对应于非金属膜欲形成另一测试过孔位置上的部分另一光阻层曝掉，露出非金属膜；
步骤40、使用膜厚测量设备测量未被所述另一光阻层覆盖的非金属膜的厚度H1；
步骤50、对未被另一光阻层覆盖的非金属膜进行一定时间T的蚀刻，形成另一测试过孔；
所述另一测试过孔偏离已被蚀刻过的测试过孔；
步骤60、蚀刻完成后，使用膜厚测量设备测量位于另一测试过孔下方的非金属膜的厚度H2；并根据非金属膜的厚度H1与H2、及蚀刻时间T计算蚀刻速率V。
所述已使用过的蚀刻速率测试控片采用以下步骤制作：
步骤100、提供一玻璃基板，并在该玻璃基板上形成金属层图形；
步骤200、在金属层图形与玻璃基板上沉积非金属膜，该非金属膜完全覆盖基板；
步骤300、在非金属膜上涂布一光阻层并进行曝光，将对应于非金属膜欲形成测试过孔位置上的部分光阻层曝掉，露出非金属膜。
所述步骤100通过成膜、曝光、蚀刻、剥离工艺形成金属层图形。
所述非金属膜的材料为氮化硅。
所述步骤20通过光阻剥离设备对光阻进行清洗，从而将所述光阻层全 部去除。
所述步骤30利用曝光设备的精准控制图形重合精度的功能将曝光位置偏离。
本发明的有益效果：本发明提供的一种蚀刻速率测试控片的制作方法与重复利用方法，通过去除非金属膜上已曝光过的光阻层，再涂布另一光阻层，并将曝光位置偏离已经蚀刻过的测试过孔对所述另一光阻层进行曝光，使得蚀刻非金属膜形成的另一测试过孔可用于再一次蚀刻速率测试，从而能够将同一蚀刻速率测试控片重复利用多次，大幅提高玻璃基板的利用率，降低生产成本，同时缩短蚀刻速率测试控片的制作时间，提高生产效率。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明蚀刻速率测试控片的制作方法的流程图；
图2为本发明蚀刻速率测试控片的制作方法的步骤1的示意图；
图3为本发明蚀刻速率测试控片的制作方法的步骤2的示意图；
图4为本发明蚀刻速率测试控片的制作方法的步骤3的示意图；
图5为本发明蚀刻速率测试控片的重复利用方法的流程图；
图6为本发明蚀刻速率测试控片的重复利用方法的步骤10的示意图；
图7为本发明蚀刻速率测试控片的重复利用方法的步骤20的示意图；
图8为本发明蚀刻速率测试控片的重复利用方法的步骤30的示意图；
图9为本发明蚀刻速率测试控片的重复利用方法的步骤40的示意图；
图10为本发明蚀刻速率测试控片的重复利用方法的步骤50的示意图；
图11为本发明蚀刻速率测试控片的重复利用方法的步骤60的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其技术效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1至图4，本发明首先提供一种蚀刻速率测试控片的制作方法，该制作方法包括如下步骤：
步骤1、如图2所示，提供一玻璃基板1，并通过成膜、曝光、蚀刻、剥离工艺在该玻璃基板1上形成金属层图形2。
所述金属层图形2主要作为曝光设备的对位图形，以便于控制曝光位置。
步骤2、如图3所示，在所述金属层图形2与玻璃基板1上沉积非金属膜3，该非金属膜3完全覆盖基板1。
值得一提的是，所述非金属膜3的厚度较大，以防止其在蚀刻测试过程中被蚀刻透。
进一步的，所述非金属膜3的材料为氮化硅。
步骤3、如图4所示，在非金属膜3上涂布一光阻层4并使用曝光设备对该光阻层4进行曝光，将对应于非金属膜3欲形成测试过孔位置上的部分一光阻层4曝掉，露出非金属膜3。
至此，完成该蚀刻速率测试控片的制作。
使用该蚀刻速率测试控片进行蚀刻速率测试时，通过蚀刻设备对未被所述光阻层4覆盖的非金属膜3进行一定时间的蚀刻，形成测试过孔，分别测量蚀刻前后位于测试过孔处的非金属膜的厚度，再结合蚀刻时间便能计算出蚀刻速率。
通过上述制作方法制得的蚀刻速率测试控片，由于其金属层图形2可作为曝光设备的对位图形，利于控制曝光位置，因此可以在一次蚀刻速率测试完成后，先将所述光阻层4去除，再重新涂布一层光阻层，在偏离已经蚀刻过的测试过孔的位置处曝光，以再次进行蚀刻速率测试，因而通过 该方法制作的蚀刻速率测试控片能够被重复利用。
请参阅图5至图11，本发明还提供一种蚀刻速率测试控片的重复利用方法，包括如下步骤：
步骤10、如图6所示，提供一已使用过的蚀刻速率测试控片。
该已使用过的蚀刻速率测试控片包括玻璃基板1、位于玻璃基板1上的金属层图形2、位于金属层图形2与玻璃基板1上的非金属膜3、及位于非金属膜3上的光阻层4；所述非金属膜3具有至少一个已被蚀刻过的测试过孔31。
进一步的，该已使用过的蚀刻速率测试控片采用以下步骤制作：
步骤100、提供一玻璃基板1，并通过成膜、曝光、蚀刻、剥离工艺在该玻璃基板1上形成金属层图形2；
步骤200、在金属层图形2与玻璃基板1上沉积非金属膜3，该非金属膜3完全覆盖基板1；步骤300、在非金属膜3上涂布一光阻层4并进行曝光，将对应于非金属膜3欲形成测试过孔位置上的部分光阻层4曝掉，露出非金属膜3。
值得一提的是，所述非金属膜3的厚度较大，以防止其在蚀刻测试过程中被蚀刻透。
进一步的，所述非金属膜3的材料为氮化硅。
步骤20、如图7所示，通过光阻剥离设备对光阻进行清洗，从而将所述光阻层4全部去除。
步骤30、如图8所示，在所述非金属膜3上涂布另一光阻层4’，并利用曝光设备的精准控制图形重合精度的功能将曝光位置偏离，避开已被蚀刻过的测试过孔31，而在偏离已被蚀刻过的测试过孔31的位置处对该另一光阻层4’进行曝光，将对应于非金属膜3欲形成另一测试过孔32位置上的部分另一光阻层4’曝掉，露出完整的没有被蚀刻过的非金属膜3。
步骤40、如图9所示，使用膜厚测量设备测量未被另一光阻层4’覆盖的非金属膜3的厚度H1。
步骤50、如图10所示，使用蚀刻设备对未被另一光阻层4’覆盖的非金属膜3进行一定时间T的蚀刻，形成另一测试过孔32。
当然，所述另一测试过孔32偏离已被蚀刻过的测试过孔31。
步骤60、如图11所示，蚀刻完成后，使用膜厚测量设备测量位于另一测试过孔32下方残留的非金属膜3的厚度H2。
然后根据金属膜3的厚度H1与H2、及蚀刻时间T计算蚀刻速率V，该蚀刻速率V是设定正常产品蚀刻时间的依据。
在曝光设备可控制图形重合精度的行程范围内，使用上述重复利用方法可对蚀刻速率测试控片进行多次重复利用，大幅提高玻璃基板的利用率，降低生产成本，同时该重复利用过程省去了所述金属层图形2与非金属膜3的制作，能够缩短蚀刻速率测试控片的制作时间，提高生产效率。
综上所述，本发明提供的一种蚀刻速率测试控片的制作方法与重复利用方法，通过去除非金属膜上已曝光过的光阻层，再涂布另一光阻层，并将曝光位置偏离已经蚀刻过的测试过孔对所述另一光阻层进行曝光，使得蚀刻非金属膜形成的另一测试过孔可用于再一次蚀刻速率测试，从而能够将同一蚀刻速率测试控片重复利用多次，大幅提高玻璃基板的利用率，降低生产成本，同时缩短蚀刻速率测试控片的制作时间，提高生产效率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

  1. 一种蚀刻速率测试控片的制作方法，包括如下步骤：
    步骤1、提供一玻璃基板，并在该玻璃基板上形成金属层图形；
    步骤2、在金属层图形与玻璃基板上沉积非金属膜，该非金属膜完全覆盖基板；
    步骤3、在非金属膜上涂布一光阻层并进行曝光，将对应于非金属膜欲形成测试过孔位置上的部分光阻层曝掉，露出非金属膜。
  2. 如权利要求1所述的蚀刻速率测试控片的制作方法，其中，所述步骤1通过成膜、曝光、蚀刻、剥离工艺形成金属层图形。
  3. 如权利要求1所述的蚀刻速率测试控片的制作方法，其中，所述非金属膜的材料为氮化硅。
  4. 一种蚀刻速率测试控片的制作方法，包括如下步骤：
    步骤1、提供一玻璃基板，并在该玻璃基板上形成金属层图形；
    步骤2、在金属层图形与玻璃基板上沉积非金属膜，该非金属膜完全覆盖基板；
    步骤3、在非金属膜上涂布一光阻层并进行曝光，将对应于非金属膜欲形成测试过孔位置上的部分光阻层曝掉，露出非金属膜；
    其中，所述步骤1通过成膜、曝光、蚀刻、剥离工艺形成金属层图形；
    其中，所述非金属膜的材料为氮化硅。
  5. 一种蚀刻速率测试控片的重复利用方法，包括如下步骤：
    步骤10、提供一已使用过的蚀刻速率测试控片；
    该已使用过的蚀刻速率测试控片包括玻璃基板、位于玻璃基板上的金属层图形、位于金属层图形与玻璃基板上的非金属膜、及位于非金属膜上的光阻层；所述非金属膜具有至少一个已被蚀刻过的测试过孔；
    步骤20、将所述光阻层全部去除；
    步骤30、在所述非金属膜上涂布另一光阻层，将曝光位置偏离所述已被蚀刻过的测试过孔对该另一光阻层进行曝光，将对应于非金属膜欲形成另一测试过孔位置上的部分另一光阻层曝掉，露出非金属膜；
    步骤40、使用膜厚测量设备测量未被所述另一光阻层覆盖的非金属膜的厚度H1；
    步骤50、对未被另一光阻层覆盖的非金属膜进行一定时间T的蚀刻，形成另一测试过孔；
    所述另一测试过孔偏离已被蚀刻过的测试过孔；
    步骤60、蚀刻完成后，使用膜厚测量设备测量位于另一测试过孔下方 的非金属膜的厚度H2；并根据非金属膜的厚度H1与H2、及蚀刻时间T计算蚀刻速率V。
  6. 如权利要求5所述的蚀刻速率测试控片的重复利用方法，其中，所述已使用过的蚀刻速率测试控片采用以下步骤制作：
    步骤100、提供一玻璃基板，并在该玻璃基板上形成金属层图形；
    步骤200、在金属层图形与玻璃基板上沉积非金属膜，该非金属膜完全覆盖基板；
    步骤300、在非金属膜上涂布一光阻层并进行曝光，将对应于非金属膜欲形成测试过孔位置上的部分光阻层曝掉，露出非金属膜。
  7. 如权利要求6所述的蚀刻速率测试控片的重复利用方法，其中，所述步骤100通过成膜、曝光、蚀刻、剥离工艺形成金属层图形。
  8. 如权利要求5所述的蚀刻速率测试控片的重复利用方法，其中，所述非金属膜的材料为氮化硅。
  9. 如权利要求5所述的蚀刻速率测试控片的重复利用方法，其中，所述步骤20通过光阻剥离设备对光阻进行清洗，从而将所述光阻层全部去除。
  10. 如权利要求5所述的蚀刻速率测试控片的重复利用方法，其中，所述步骤30利用曝光设备的精准控制图形重合精度的功能将曝光位置偏 离。
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