WO2016002701A1 - Composition absorbant le rayonnement dans le proche infrarouge, filtre de coupure du rayonnement proche infrarouge, procédé de fabrication dudit filtre, élément d'imagerie à semi-conducteurs, et module de caméra - Google Patents
Composition absorbant le rayonnement dans le proche infrarouge, filtre de coupure du rayonnement proche infrarouge, procédé de fabrication dudit filtre, élément d'imagerie à semi-conducteurs, et module de caméra Download PDFInfo
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- WO2016002701A1 WO2016002701A1 PCT/JP2015/068641 JP2015068641W WO2016002701A1 WO 2016002701 A1 WO2016002701 A1 WO 2016002701A1 JP 2015068641 W JP2015068641 W JP 2015068641W WO 2016002701 A1 WO2016002701 A1 WO 2016002701A1
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- atom
- copper
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- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 20
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 8
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- 125000004429 atom Chemical group 0.000 claims description 89
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- 125000005647 linker group Chemical group 0.000 claims description 44
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 28
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 21
- 238000010521 absorption reaction Methods 0.000 claims description 16
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 4
- 239000005750 Copper hydroxide Substances 0.000 description 4
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- BSXVKCJAIJZTAV-UHFFFAOYSA-L copper;methanesulfonate Chemical compound [Cu+2].CS([O-])(=O)=O.CS([O-])(=O)=O BSXVKCJAIJZTAV-UHFFFAOYSA-L 0.000 description 4
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- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
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- MSPOSRHJXMILNK-UHFFFAOYSA-N ethyl 1h-pyrazole-5-carboxylate Chemical compound CCOC(=O)C1=CC=NN1 MSPOSRHJXMILNK-UHFFFAOYSA-N 0.000 description 2
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- 229920002223 polystyrene Polymers 0.000 description 1
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- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical class [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- 239000004408 titanium dioxide Substances 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
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- 125000004953 trihalomethyl group Chemical group 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/42—Introducing metal atoms or metal-containing groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020167034410A KR101958696B1 (ko) | 2014-06-30 | 2015-06-29 | 근적외선 흡수성 조성물, 근적외선 차단 필터, 근적외선 차단 필터의 제조 방법, 고체 촬상 소자, 카메라 모듈 |
JP2016531356A JP6340078B2 (ja) | 2014-06-30 | 2015-06-29 | 近赤外線吸収性組成物、近赤外線カットフィルタ、近赤外線カットフィルタの製造方法、固体撮像素子、カメラモジュール |
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JP2014134256 | 2014-06-30 | ||
JP2014-134256 | 2014-06-30 |
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WO2016002701A1 true WO2016002701A1 (fr) | 2016-01-07 |
Family
ID=55019236
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/068641 WO2016002701A1 (fr) | 2014-06-30 | 2015-06-29 | Composition absorbant le rayonnement dans le proche infrarouge, filtre de coupure du rayonnement proche infrarouge, procédé de fabrication dudit filtre, élément d'imagerie à semi-conducteurs, et module de caméra |
Country Status (4)
Country | Link |
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JP (1) | JP6340078B2 (fr) |
KR (1) | KR101958696B1 (fr) |
TW (1) | TWI667243B (fr) |
WO (1) | WO2016002701A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016208258A1 (fr) * | 2015-06-24 | 2016-12-29 | 富士フイルム株式会社 | Composition absorbant l'infrarouge proche, filtre bloquant l'infrarouge proche, procédé permettant de produire un filtre bloquant l'infrarouge proche, appareil, procédé permettant de produire un polymère contenant du cuivre et polymère contenant du cuivre |
US11555132B2 (en) | 2019-02-01 | 2023-01-17 | Samsung Electronics Co., Ltd. | Near-infrared absorbing composition, optical structure, and camera module and electronic device comprising the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102476708B1 (ko) | 2017-11-01 | 2022-12-09 | 삼성전자주식회사 | 광학 필터, 및 이를 포함하는 카메라 모듈 및 전자 장치 |
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JPH0866971A (ja) * | 1994-08-30 | 1996-03-12 | Nippon Hikyumen Lens Kk | 金属含有樹脂の製造方法及びこの樹脂を素材とするレンズ |
JPH1152127A (ja) * | 1997-08-07 | 1999-02-26 | Kyoritsu Kagaku Sangyo Kk | 近赤外線吸収材料、その合成方法、および近赤外線吸収性樹脂組成物 |
JPH11315215A (ja) * | 1998-02-20 | 1999-11-16 | Mitsubishi Rayon Co Ltd | 銅化合物含有樹脂組成物、樹脂板およびpdp用前面板 |
JP2000007870A (ja) * | 1998-06-23 | 2000-01-11 | Kureha Chem Ind Co Ltd | 樹脂組成物およびその製造方法、光学フィルターおよびこれを備えた装置、熱線吸収フィルター、光ファイバーおよび眼鏡レンズ |
JP2007178915A (ja) * | 2005-12-28 | 2007-07-12 | Fujifilm Corp | 金属微粒子分散物及び赤外線遮蔽フィルター |
JP2010134457A (ja) * | 2008-11-06 | 2010-06-17 | Uni-Chemical Co Ltd | 赤外線遮断性フィルム及び赤外線遮断性積層フィルム |
WO2011135974A1 (fr) * | 2010-04-26 | 2011-11-03 | 一般財団法人川村理化学研究所 | Film mince absorbable par un rayonnement infrarouge contenant des cristaux d'oxyde de titane de type rutile, et son procédé de production |
JP2013253224A (ja) * | 2012-05-08 | 2013-12-19 | Fujifilm Corp | 近赤外線吸収性液状組成物、これを用いた近赤外線カットフィルタ及びその製造方法、並びに、カメラモジュール及びその製造方法 |
WO2014084288A1 (fr) * | 2012-11-30 | 2014-06-05 | 富士フイルム株式会社 | Composition de résine durcissable, et puce de capteur d'image ainsi que procédé de fabrication de celle-ci mettant en œuvre cette composition |
WO2015012322A1 (fr) * | 2013-07-24 | 2015-01-29 | 富士フイルム株式会社 | Composition absorbant l'infrarouge proche, filtre de coupure de l'infrarouge proche obtenu en l'utilisant, procédé de production dudit filtre de coupure, module pour appareil photo et procédé pour produire ledit module, et élément photographique solide |
WO2015111530A1 (fr) * | 2014-01-21 | 2015-07-30 | 富士フイルム株式会社 | Composition absorbant les proches infrarouges, filtre arrêtant les proches infrarouges, procédé de production du filtre arrêtant les proches infrarouges, module d'appareil photographique, et procédé de fabrication du module d'appareil photographique |
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JP2001213918A (ja) | 2000-02-04 | 2001-08-07 | Nisshinbo Ind Inc | 近赤外吸収組成物及び該組成物より製造した近赤外吸収フィルター |
JP2009013200A (ja) | 2007-06-29 | 2009-01-22 | Toyo Ink Mfg Co Ltd | 近赤外線吸収性感圧式接着剤及び近赤外線吸収性感圧式接着シート |
JP5941424B2 (ja) * | 2012-07-09 | 2016-06-29 | 富士フイルム株式会社 | 近赤外線吸収性組成物、これを用いた近赤外線カットフィルタ及びその製造方法、並びに、カメラモジュール及びその製造方法 |
-
2015
- 2015-06-09 TW TW104118547A patent/TWI667243B/zh not_active IP Right Cessation
- 2015-06-29 JP JP2016531356A patent/JP6340078B2/ja not_active Expired - Fee Related
- 2015-06-29 KR KR1020167034410A patent/KR101958696B1/ko active IP Right Grant
- 2015-06-29 WO PCT/JP2015/068641 patent/WO2016002701A1/fr active Application Filing
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JPH0866971A (ja) * | 1994-08-30 | 1996-03-12 | Nippon Hikyumen Lens Kk | 金属含有樹脂の製造方法及びこの樹脂を素材とするレンズ |
JPH1152127A (ja) * | 1997-08-07 | 1999-02-26 | Kyoritsu Kagaku Sangyo Kk | 近赤外線吸収材料、その合成方法、および近赤外線吸収性樹脂組成物 |
JPH11315215A (ja) * | 1998-02-20 | 1999-11-16 | Mitsubishi Rayon Co Ltd | 銅化合物含有樹脂組成物、樹脂板およびpdp用前面板 |
JP2000007870A (ja) * | 1998-06-23 | 2000-01-11 | Kureha Chem Ind Co Ltd | 樹脂組成物およびその製造方法、光学フィルターおよびこれを備えた装置、熱線吸収フィルター、光ファイバーおよび眼鏡レンズ |
JP2007178915A (ja) * | 2005-12-28 | 2007-07-12 | Fujifilm Corp | 金属微粒子分散物及び赤外線遮蔽フィルター |
JP2010134457A (ja) * | 2008-11-06 | 2010-06-17 | Uni-Chemical Co Ltd | 赤外線遮断性フィルム及び赤外線遮断性積層フィルム |
WO2011135974A1 (fr) * | 2010-04-26 | 2011-11-03 | 一般財団法人川村理化学研究所 | Film mince absorbable par un rayonnement infrarouge contenant des cristaux d'oxyde de titane de type rutile, et son procédé de production |
JP2013253224A (ja) * | 2012-05-08 | 2013-12-19 | Fujifilm Corp | 近赤外線吸収性液状組成物、これを用いた近赤外線カットフィルタ及びその製造方法、並びに、カメラモジュール及びその製造方法 |
WO2014084288A1 (fr) * | 2012-11-30 | 2014-06-05 | 富士フイルム株式会社 | Composition de résine durcissable, et puce de capteur d'image ainsi que procédé de fabrication de celle-ci mettant en œuvre cette composition |
WO2015012322A1 (fr) * | 2013-07-24 | 2015-01-29 | 富士フイルム株式会社 | Composition absorbant l'infrarouge proche, filtre de coupure de l'infrarouge proche obtenu en l'utilisant, procédé de production dudit filtre de coupure, module pour appareil photo et procédé pour produire ledit module, et élément photographique solide |
WO2015111530A1 (fr) * | 2014-01-21 | 2015-07-30 | 富士フイルム株式会社 | Composition absorbant les proches infrarouges, filtre arrêtant les proches infrarouges, procédé de production du filtre arrêtant les proches infrarouges, module d'appareil photographique, et procédé de fabrication du module d'appareil photographique |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2016208258A1 (fr) * | 2015-06-24 | 2016-12-29 | 富士フイルム株式会社 | Composition absorbant l'infrarouge proche, filtre bloquant l'infrarouge proche, procédé permettant de produire un filtre bloquant l'infrarouge proche, appareil, procédé permettant de produire un polymère contenant du cuivre et polymère contenant du cuivre |
US11555132B2 (en) | 2019-02-01 | 2023-01-17 | Samsung Electronics Co., Ltd. | Near-infrared absorbing composition, optical structure, and camera module and electronic device comprising the same |
Also Published As
Publication number | Publication date |
---|---|
JP6340078B2 (ja) | 2018-06-06 |
TW201600523A (zh) | 2016-01-01 |
KR20170007365A (ko) | 2017-01-18 |
TWI667243B (zh) | 2019-08-01 |
JPWO2016002701A1 (ja) | 2017-06-01 |
KR101958696B1 (ko) | 2019-03-15 |
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