WO2015194296A1 - 発光デバイス - Google Patents

発光デバイス Download PDF

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Publication number
WO2015194296A1
WO2015194296A1 PCT/JP2015/064304 JP2015064304W WO2015194296A1 WO 2015194296 A1 WO2015194296 A1 WO 2015194296A1 JP 2015064304 W JP2015064304 W JP 2015064304W WO 2015194296 A1 WO2015194296 A1 WO 2015194296A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
light emitting
light source
emitting unit
emitting device
Prior art date
Application number
PCT/JP2015/064304
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
角見　昌昭
浅野　秀樹
隆史 西宮
Original Assignee
日本電気硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気硝子株式会社 filed Critical 日本電気硝子株式会社
Priority to CN201580013121.2A priority Critical patent/CN106104824A/zh
Priority to KR1020167025769A priority patent/KR20170020306A/ko
Priority to JP2016529184A priority patent/JPWO2015194296A1/ja
Publication of WO2015194296A1 publication Critical patent/WO2015194296A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Definitions

  • the present invention relates to a light emitting device.
  • Patent Document 1 discloses a light-emitting device that includes a blue LED and a sealing portion that seals the blue LED, and the sealing portion is made of a resin composition containing quantum dots.
  • the light emitting surface of the blue LED is in contact with a sealing portion including quantum dots that are easily deteriorated by heat.
  • the blue LED and the substrate on which the electrodes are arranged are connected via a bonding wire. For this reason, the heat generated when the blue LED emits light degrades the quantum dots in the sealing portion in contact with the light emitting surface of the blue LED and the bonding wire, resulting in a decrease in light emission intensity and the like.
  • the main object of the present invention is to provide a light emitting device which is not easily deteriorated by heat.
  • a light-emitting device includes a light-emitting unit including quantum dots, and a light source that emits light having an excitation wavelength of the quantum dot to the light-emitting unit, and a portion of the light source opposite to the light-emitting unit The emission intensity at is higher than the emission intensity at the portion on the light emitting part side.
  • the light-emitting device may be located on the opposite side of the light source from the light-emitting unit, may further include a mounting substrate on which the light source is mounted, and the light source may be flip-chip mounted on the mounting substrate.
  • the light emitting unit may be provided apart from the light source.
  • the light-emitting device is located on the opposite side of the light source from the light source, further includes a mounting substrate on which the light source is mounted, and the mounting substrate houses the light source and the light emitting unit.
  • a cover member that has a recess and closes the recess may further be provided, and the light emitting unit may be provided on the surface of the cover member on the recess side of the device.
  • the light-emitting device according to the present invention may be further provided with a cell that is disposed above the light source and seals the light-emitting portion.
  • the light source may be constituted by an LED element.
  • the light emitting device is located on the opposite side of the light source with respect to the light source, further includes a mounting substrate on which the light source is mounted, and the light emitting unit further includes a dispersion medium of quantum dots,
  • the thermal conductivity may be lower than the thermal conductivity of the mounting substrate.
  • FIG. 1 is a schematic cross-sectional view of the light emitting device according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional view of the light emitting device according to the second embodiment.
  • FIG. 3 is a schematic cross-sectional view of a light emitting device according to a third embodiment.
  • FIG. 4 is a schematic cross-sectional view of a light emitting device according to a fourth embodiment.
  • FIG. 1 is a schematic cross-sectional view of a light emitting device 1 according to the first embodiment.
  • the light emitting device 1 is a device that emits light having a wavelength different from that of the excitation light when the excitation light is incident.
  • the light emitting device 1 may emit mixed light of excitation light and light generated by irradiation of excitation light.
  • the light emitting device 1 has a mounting substrate 10.
  • the mounting substrate 10 includes a first member 11 serving as a base material and a second member 12 serving as a frame member.
  • the second member 12 is provided on the first member 11.
  • the second member 12 is provided with a through hole 12 a that opens to the first member 11.
  • a recess 13 is formed by the through hole 12a.
  • the through hole 12a tapers toward the first member 11 side. For this reason, the side wall 13 a of the recess 13 is inclined with respect to the main surface of the first member 11.
  • the mounting substrate 10 may be made of any material.
  • the mounting substrate 10 can be made of, for example, ceramics such as low-temperature co-fired ceramics, metal, resin, glass, or the like.
  • the material constituting the first member 11 and the material constituting the second member 12 may be the same or different. When the material constituting the first member 11 and the material constituting the second member 12 are the same, since the thermal expansion coefficient is the same, the first generated by the heat generated when light is emitted. It can suppress that the member 11 and the 2nd member 12 peel.
  • Lands 11 a and 11 b are provided on one surface of the first member 11 of the mounting substrate 10.
  • the lands 11a and 11b are connected to terminal electrodes 11e and 11f provided on the other surface of the first member 11 by via-hole electrodes 11c and 11d.
  • the light source 20 is disposed on the bottom wall 13 b of the recess 13 of the mounting substrate 10.
  • the light source 20 is flip-chip mounted on the first member 11 of the mounting substrate 10.
  • flip chip mounting means that electronic components are arranged on lands (bumps) provided on the mounting surface of the mounting substrate, and the electrodes and lands of the electronic components are joined by a conductive material such as solder. This means that an electronic component is mounted.
  • the light source 20 is located on the lands 11a and 11b.
  • the electrodes of the light source 20 are joined to the lands 11a and 11b via a conductive material such as solder.
  • the light source 20 can be composed of, for example, an LED (Light Emitting Diode) element, an LD (Laser Diode) element, or the like. In the present embodiment, an example in which the light source 20 is configured by LED elements will be described.
  • LED Light Emitting Diode
  • LD Laser Diode
  • a light emitting unit 30 is arranged in the recess 13.
  • the light emitting unit 30 and the light source 20 are accommodated in the recess 13. That is, the light emitting unit 30 is arranged so that light from the light source 20 is incident in the recess 13. Specifically, the light emitting unit 30 is disposed on the light source 20 so as to block the light source 20.
  • the light emitting unit 30 includes quantum dots.
  • the light emitting unit 30 may include one type of quantum dot or may include a plurality of types of quantum dots. By including a plurality of types of quantum dots, the color tone of the converted light can be widened.
  • Quantum dots emit light having a wavelength different from that of excitation light when excitation light of the quantum dot is incident.
  • the wavelength of the light emitted from the quantum dot depends on the particle diameter of the quantum dot. That is, the wavelength of the light obtained by changing the particle diameter of the quantum dots can be adjusted. For this reason, the particle diameter of a quantum dot is made into the particle diameter according to the wavelength of the light to obtain.
  • the particle size of the quantum dots is usually about 2 nm to 10 nm.
  • quantum dots that emits blue visible light (fluorescence with a wavelength of 440 nm to 480 nm) when irradiated with excitation light of ultraviolet to near ultraviolet with a wavelength of 300 nm to 440 nm
  • the particle diameter is about 2.0 nm to 3.0 nm.
  • quantum dots that emit green visible light (fluorescence having a wavelength of 500 nm to 540 nm) when irradiated with ultraviolet to near ultraviolet excitation light having a wavelength of 300 nm to 440 nm or blue excitation light having a wavelength of 440 nm to 480 nm include particle diameters.
  • CdSe / ZnS microcrystals having a thickness of about 3.0 nm to 3.3 nm.
  • Specific examples of quantum dots that emit yellow visible light (fluorescence having a wavelength of 540 nm to 595 nm) when irradiated with ultraviolet to near ultraviolet excitation light having a wavelength of 300 nm to 440 nm or blue excitation light having a wavelength of 440 nm to 480 nm include particle diameters.
  • CdSe / ZnS microcrystals having a thickness of about 3.3 nm to 4.5 nm.
  • quantum dots that emit red visible light (fluorescence with a wavelength of 600 nm to 700 nm) when irradiated with ultraviolet to near ultraviolet excitation light with a wavelength of 300 nm to 440 nm or blue excitation light with a wavelength of 440 nm to 480 nm include particle diameters.
  • CdSe / ZnS microcrystals having a thickness of about 4.5 nm to 10 nm.
  • the light emitting unit 30 includes a dispersion medium in which quantum dots are dispersed.
  • a dispersion medium will not be specifically limited if a quantum dot can be disperse
  • the dispersion medium may be a solid such as a resin or a liquid, for example. In this embodiment, an example in which the dispersion medium is a resin will be described. Specific examples of the resin preferably used include a silicone resin, an epoxy resin, and an acrylic resin.
  • the light emitting unit 30 may further include, for example, a light dispersant in addition to the resin and the quantum dots.
  • a light dispersant in addition to the resin and the quantum dots.
  • Specific examples of the light scattering agent preferably used include highly reflective inorganic compound particles such as alumina particles, titania particles and silica particles, and highly reflective white resin particles. As described above, by including the light scattering agent in the light emitting unit 30, the in-plane variation of the light emission intensity in the light emitting unit 11 can be reduced.
  • the light emitting unit 30 may be configured by a laminate of a plurality of light emitting layers.
  • the plurality of light emitting layers may include a plurality of light emitting layers including quantum dots that emit light having different wavelengths.
  • a stacked body of a plurality of light-emitting layers including a first light-emitting layer including quantum dots that emit light having a first wavelength and a second light-emitting layer including quantum dots that emit light having a second wavelength You may comprise the light emission part 30 by.
  • By laminating a plurality of light emitting layers it is possible to measure the color tone of the first light emitting layer and adjust the color tone of the second light emitting layer according to the obtained color tone. The variation of can be suppressed.
  • the light emitting unit 30 may be filled in the entire recess 13, but is provided in a part of the recess 13 in the present embodiment.
  • the recess 13 is closed by the cover member 40.
  • the cover member 40 and the mounting substrate 10 are joined.
  • a sealing space 50 is defined by the cover member 40 and the mounting substrate 10.
  • the light source 20 and the light emitting unit 30 are sealed in the sealed space 50.
  • the cover member 40 is preferably made of an inorganic material. Specifically, since the cover member 40 needs to have translucency, it is preferable that the cover member 40 is made of, for example, glass or ceramics. Thus, since the cover member 40 is made of an inorganic material, it is possible to prevent oxygen and moisture from entering the sealed space 50, so that deterioration of quantum dots due to contact with oxygen and moisture is suppressed. Can do.
  • the light source 20 emits light including light having an excitation wavelength of quantum dots included in the light emitting unit 30 to the light emitting unit 30.
  • the quantum dots included in the light emitting unit 30 emit light having a wavelength corresponding to the particle diameter of the quantum dots.
  • the light emitting device 1 emits light emitted from the quantum dots or mixed light of the light emitted from the quantum dots and the light from the light source 20.
  • the first member 11 of the mounting substrate 10 is located on the side opposite to the light emitting unit 30 with respect to the light source 20.
  • the light source 20 is flip-mounted on the first member 11. For this reason, the light emission intensity in the part 20a on the opposite side to the light emitting part 30 of the light source 20 is higher than the light emission intensity in the part 20b on the light emitting part 30 side. Therefore, the light emitting unit 30 including the quantum dots and the portion of the light source 20 that is at a high temperature can be isolated. If the light source 20 is flip-chip mounted, the connection between the light source 20 and the first member 11 by a bonding wire is not necessary.
  • the light emitting unit 30 When the light emitting unit 30 is composed of an element that generates a large amount of heat when emitting light such as an LED element or an LD element, the light source 20 is likely to become hot. Accordingly, the light emitting unit 30 is likely to be deteriorated as the light source 20 emits light. Therefore, it is more effective to make the light emission intensity of the portion 20a of the light source 20 opposite to the light emitting portion 30 higher than the light emission intensity of the portion 20b on the light emitting portion 30 side.
  • the thermal conductivity of the dispersion medium of the light emitting unit 30 is lower than the thermal conductivity of the mounting substrate 10. Is more preferably 0.5 times or less, and still more preferably 0.25 times or less. This is because the heat of the light source 20 is preferentially transmitted to the mounting substrate 10 side and is not easily transmitted to the light emitting unit 30, so that the quantum dots included in the light emitting unit 30 are less likely to be thermally deteriorated. .
  • the light emitting device 1 b in which the light emitting unit 30 is provided so as to block the light source 20 in the recess 13 of the device body 10 is blocked.
  • a resin in which quantum dots (including a light dispersant as necessary) are dispersed is dropped onto the light source 20 using a dropper or the like.
  • the resin layer is dried in an atmosphere with less air or moisture to form the light emitting unit 30.
  • the cover member 40 is placed on the device body 10 and the cover member 40 and the device body 10 are joined.
  • FIG. 2 is a schematic cross-sectional view of a light emitting device 1a according to the second embodiment.
  • the position of the light emitting part is not particularly limited as long as it is a position where light from the light source is incident.
  • the light emitting unit 30 is provided on the surface of the cover member 40 on the concave portion 13 side.
  • the light emitting unit 30 is provided on substantially the entire surface exposed to the concave portion 13 of the cover member 40.
  • the light emitting unit 30 and the light source 20 are separated from each other. A gap is provided between the light emitting unit 30 and the light source 20. For this reason, the heat of the light source 20 is hardly transmitted by the light emitting unit 30. Therefore, the quantum dots included in the light emitting unit 30 are not easily thermally deteriorated. Therefore, the thermal deterioration of the light emitting device 1a can be more effectively suppressed.
  • such a light emission part 30 can be formed by apply
  • FIG. 3 is a schematic cross-sectional view of a light emitting device 1b according to the third embodiment.
  • the light emitting unit 30 is provided in a cell 60 provided above the light source 20 and separated from the light source 20.
  • the light emitting unit 30 is sealed in the internal space 40 a of the cell 60.
  • the light emitting unit 30 is isolated from the light source 20 by the cell 60, the heat of the light source 20 is more effectively suppressed from being transmitted to the light emitting unit 30. For this reason, the quantum dots included in the light emitting unit 30 are unlikely to be thermally deteriorated. Therefore, the thermal deterioration of the light emitting device 1b can be more effectively suppressed.
  • the thermal conductivity of the cell 60 is preferably low.
  • the thermal conductivity of the cell 60 is preferably 30 or less, and more preferably 10 or less.
  • the thermal conductivity of the cell 60 is usually 1 or more.
  • the cell 60 can be made of glass, ceramics, resin, or the like, for example.
  • FIG. 4 is a schematic cross-sectional view of a light emitting device according to a fourth embodiment.
  • the sealing space 50 is filled with a resin 70.
  • the refractive index difference between the resin 70 and the light emitting unit 30 and the refractive index difference between the resin 70 and the light source 20 can be reduced. Therefore, the light emission efficiency can be improved.
  • Resin 70 can be made of, for example, a silicone resin, an epoxy resin, an acrylic resin, or the like.
  • Resin 70 may contain a light dispersing agent. In this case, the uniformity of light from the light source 20 to the light emitting unit 30 can be further enhanced.
  • the resin 70 is closed so as to close the light source 20 disposed in the recess 13 of the device body 10.
  • a light dispersant is included if necessary
  • a resin in which quantum dots (including a light dispersant as necessary) are dispersed is applied to one surface of the cover member 40 and dried to form a resin layer.
  • the cover member 40 is placed on the device main body 10 so that the light emitting unit 30 is accommodated in the recess 13 of the device main body 10, and the cover member 30 and the device main body 10 are joined.
  • the resin 70 used for filling the sealing space a resin having a low surface tension or a resin having high wettability with respect to the second member 12 serving as a frame member is used.
  • the thickness of the portion is thin, and it becomes easier to obtain a resin layer that fills the sealing space 50 whose thickness gradually increases toward the outside.
  • a resin having a high surface tension or a resin having low wettability with respect to the cover member 40 as a resin used to disperse the quantum dots (including a light dispersing agent as necessary) to be the light emitting unit 30.
  • the light emitting device 1 is obtained in which the thickness of the light emitting portion 30 gradually decreases toward the outside at least at the peripheral portion of the light emitting portion 30. It becomes easy.
  • a resin in which quantum dots are dispersed is applied, and one of the cover members 40 is directly applied.
  • the method for forming the light emitting unit 30 on the surface has been described, the present invention is not limited to this method.
  • a resin having quantum dots dispersed therein is filled in a mold having a desired shape, molded, and dried to form the light emitting unit 30 in advance, and the molded light emitting unit 30 is formed on one surface of the cover member 40. Further, it may be adhered using an adhesive whose refractive index is adjusted. By doing in this way, the light emission part 30 of the same shape can be mass-produced, and the dispersion

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
PCT/JP2015/064304 2014-06-18 2015-05-19 発光デバイス WO2015194296A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201580013121.2A CN106104824A (zh) 2014-06-18 2015-05-19 发光器件
KR1020167025769A KR20170020306A (ko) 2014-06-18 2015-05-19 발광 디바이스
JP2016529184A JPWO2015194296A1 (ja) 2014-06-18 2015-05-19 発光デバイス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-125839 2014-06-18
JP2014125839 2014-06-18

Publications (1)

Publication Number Publication Date
WO2015194296A1 true WO2015194296A1 (ja) 2015-12-23

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Application Number Title Priority Date Filing Date
PCT/JP2015/064304 WO2015194296A1 (ja) 2014-06-18 2015-05-19 発光デバイス

Country Status (5)

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JP (1) JPWO2015194296A1 (ko)
KR (1) KR20170020306A (ko)
CN (1) CN106104824A (ko)
TW (1) TW201608741A (ko)
WO (1) WO2015194296A1 (ko)

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Publication number Priority date Publication date Assignee Title
TWI823371B (zh) * 2020-01-31 2023-11-21 日商日亞化學工業股份有限公司 面狀光源

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197476A (ja) * 2004-01-07 2005-07-21 Koito Mfg Co Ltd 発光モジュール及び車両用灯具
JP2007134645A (ja) * 2005-11-14 2007-05-31 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
JP2007273498A (ja) * 2006-03-30 2007-10-18 Kyocera Corp 波長変換器および発光装置
JP2014096419A (ja) * 2012-11-07 2014-05-22 Stanley Electric Co Ltd 光電子デバイス

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006135002A (ja) * 2004-11-04 2006-05-25 Koito Mfg Co Ltd 発光デバイス及び車両用灯具
JP5483669B2 (ja) 2008-11-26 2014-05-07 昭和電工株式会社 液状硬化性樹脂組成物、ナノ粒子蛍光体を含む硬化樹脂の製造方法、発光装置の製造方法、発光装置及び照明装置
JPWO2012132232A1 (ja) * 2011-03-31 2014-07-24 パナソニック株式会社 半導体発光装置
GB201109065D0 (en) * 2011-05-31 2011-07-13 Nanoco Technologies Ltd Semiconductor nanoparticle-containing materials and light emitting devices incorporating the same
WO2013001687A1 (ja) * 2011-06-30 2013-01-03 パナソニック株式会社 発光装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197476A (ja) * 2004-01-07 2005-07-21 Koito Mfg Co Ltd 発光モジュール及び車両用灯具
JP2007134645A (ja) * 2005-11-14 2007-05-31 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
JP2007273498A (ja) * 2006-03-30 2007-10-18 Kyocera Corp 波長変換器および発光装置
JP2014096419A (ja) * 2012-11-07 2014-05-22 Stanley Electric Co Ltd 光電子デバイス

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JPWO2015194296A1 (ja) 2017-04-20
CN106104824A (zh) 2016-11-09
TW201608741A (zh) 2016-03-01
KR20170020306A (ko) 2017-02-22

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