WO2015192401A1 - 基板的封装方法 - Google Patents

基板的封装方法 Download PDF

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Publication number
WO2015192401A1
WO2015192401A1 PCT/CN2014/081445 CN2014081445W WO2015192401A1 WO 2015192401 A1 WO2015192401 A1 WO 2015192401A1 CN 2014081445 W CN2014081445 W CN 2014081445W WO 2015192401 A1 WO2015192401 A1 WO 2015192401A1
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WIPO (PCT)
Prior art keywords
substrate
insulating film
inorganic insulating
glue
package board
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PCT/CN2014/081445
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English (en)
French (fr)
Inventor
刘亚伟
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/378,425 priority Critical patent/US20160248016A1/en
Publication of WO2015192401A1 publication Critical patent/WO2015192401A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method of packaging a substrate. Background technique
  • LCD liquid crystal display
  • OLED Organic Light Emitting Diode
  • Planar light source technology is a new type of light source, and its technical development has been close to the mass production level.
  • the bonding of two flat glass sheets is an important technology, and the packaging effect will directly affect the performance of the device.
  • UV curing technology is the earliest and most commonly used technology for LCD/OLED packaging. It has the following characteristics: no solvent or a small amount of solvent, which reduces solvent pollution to the environment; low energy consumption, low temperature curing, suitable for Heat sensitive material; fast curing speed, high efficiency, can be used in high speed production lines, and the curing equipment covers a small area.
  • the UV glue used in the ultraviolet curing is an organic material, the molecular gap is large after curing, and the water vapor and the oxygen are relatively easy to pass through the gap to reach the inner sealing region. Therefore, UV packaging is more suitable for applications that are less sensitive to moisture and oxygen, such as LCDs. Because OLED devices are very sensitive to water vapor and oxygen, When using uv package, there is usually a desiccant inside the device to reduce the water vapor that reaches the inner sealing area through the gap, thus extending the service life of the OLED device.
  • Frit packaging technology is a new type of flat glass packaging technology that is currently being developed. There is almost no relevant literature report in mainland China.
  • the Frit package is a solution in which the glass frit is made into a certain viscosity, coated on the package glass, heated to remove the solvent, and then bonded to the glass to be packaged, and the frit glass powder is instantly burned and melted by a laser (Laser) to thereby melt the two pieces.
  • the flat glass is bonded together. Since Frit packaging technology used is inorganic encapsulating medium, so its ability to prevent moisture and oxygen is very strong, especially for water vapor, oxygen-sensitive OLED 0 Currently, packaging technologies frit, foreign patent monopoly few companies.
  • FIG. 1 and FIG. 2 are schematic diagrams showing a UV encapsulation method of a conventional substrate.
  • the encapsulation method applies only the UV adhesive 200 on the surface of the package board 100, and then is adhered to the TFT substrate 300, and then irradiated with UV light.
  • the UV glue is cured to achieve packaging of the package board 100 and the TFT substrate 300.
  • the existing UV packaging method Since the OLED device 400 disposed on the TFT substrate 300 is very sensitive to moisture and oxygen, the existing UV packaging method has a poor ability to block moisture and oxygen, so it is usually required to set The desiccant, in order to reduce the water vapor that reaches the inner sealing region through the UV glue, prolongs the service life of the OLED device, thereby causing the problem that the existing UV packaging method is only suitable for the bottom emission OLED device structure.
  • the water-blocking effect of the Frit package is good, but the process is complicated and the equipment is expensive. Summary of the invention
  • the object of the present invention is to provide a method for packaging a substrate, which can improve the packaging effect, improve the ability to block water vapor and oxygen, and prolong the service life of the OLED device, and the method can be applied to all bottom emission without using a desiccant.
  • OLED devices with top emission and double side display can improve the packaging effect, improve the ability to block water vapor and oxygen, and prolong the service life of the OLED device, and the method can be applied to all bottom emission without using a desiccant.
  • the present invention provides a method for packaging a substrate, comprising the following steps: Step 1. Providing a substrate and a package board;
  • Step 2 Place a ring of inorganic insulating film on the package board;
  • Step 3 arranging a circle of UV glue on the outer side of the inorganic insulating film on the ring;
  • Step 4 laminating the package board and the substrate;
  • Step 5 The UV glue is irradiated with a UV light source to cure it, thereby encapsulating the package board to the substrate.
  • the substrate is a TFT substrate.
  • the substrate is a TFT substrate provided with an OLED device.
  • the package board provided in the step 1 is provided with a glue application position for setting the UV glue.
  • the inorganic insulating film disposed in the step 2 is located inside the glue application position, and the UV glue disposed in the step 3 is located at the glue application position. .
  • the UV glue is disposed on the package board by coating.
  • the material of the inorganic insulating film is Si0 2 or SiN Xo
  • the step 2 further includes first providing a metal layer on the package board, and the inorganic insulating film is disposed on the metal layer.
  • the metal layer is molybdenum.
  • the inorganic insulating film is formed while making the alignment mark of the package board.
  • the inorganic insulating film is formed by CVD coating and then etched.
  • the inorganic insulating film has a width of 20 um to 2000 um and a height of 3 um to 50 um, and the width and height of the inorganic insulating film on the same package board are uniform.
  • the outer edge of the inorganic insulating film is between 0.5 mm and 5 mm from the center line of the glue application position.
  • the height of the UV glue in the step 3 is greater than the height of the inorganic insulating film.
  • the UV adhesive width is controlled to be 1 mm to 5 mm.
  • the package board is a glass plate.
  • the invention also provides a method for packaging a substrate, comprising the following steps: Step 1. Providing a substrate and a package board;
  • Step 2 Place a ring of inorganic insulating film on the package board;
  • Step 3 arranging a circle of UV glue on the outer side of the inorganic insulating film on the ring;
  • Step 4 laminating the package board and the substrate;
  • Step 5 using a UV light source to irradiate the UV glue to cure, thereby encapsulating the package board to the substrate;
  • the substrate is a TFT substrate, and the package board is a glass plate;
  • the substrate is provided with an OLED device
  • the package board provided in the step 1 is provided with a glue application position for setting the UV glue.
  • the inorganic insulating film disposed in the step 2 is located inside the glue application position, and the UV glue disposed in the step 3 is located at the glue application position.
  • the UV glue is disposed on the package board by coating;
  • the material of the inorganic insulating film is SiO 2 or SiN X ;
  • the inorganic insulating film has a width of 20 um to 2000 um and a height of 3 um to 50 um, and the width and height of the inorganic insulating film on the same package board are uniform. After the package board and the substrate are bonded in the step 4, the UV adhesive width is controlled. Lmm ⁇ 5mm, the height of the UV glue in step 3 is greater than inorganic The height of the insulating film;
  • the outer edge of the inorganic insulating film is between 0.5 mm and 5 mm from the center line of the glue application position.
  • the invention has the advantages that the packaging method of the substrate provided by the invention is simple and easy, and the operability is strong, which combines the advantages of the UV package and the frit package, by providing a ring of inorganic insulating film on the package board, and the inorganic
  • the insulating film is disposed inside the UV glue, and the inorganic insulating film blocks moisture and oxygen, thereby significantly improving the packaging effect, improving the ability to block water vapor and oxygen, prolonging the service life of the OLED device, and the method can be applied without using a desiccant. All OLED devices with bottom emission, top emission and double side display.
  • 1 is a top plan view of a conventional UV encapsulation method of a substrate
  • 2 is a schematic cross-sectional view showing a conventional UV encapsulation method of a substrate
  • FIG. 3 is a flow chart of a method of packaging a substrate of the present invention.
  • step 1 of a method for packaging a substrate of the present invention is a schematic plan view of step 1 of a method for packaging a substrate of the present invention
  • step 2 is a schematic plan view of step 2 of a method for packaging a substrate of the present invention.
  • FIG. 6 is a cross-sectional view showing a step 2 of an embodiment of a method for packaging a substrate of the present invention
  • FIG. 7 is a cross-sectional view showing another embodiment of a method for packaging a substrate of the present invention. a schematic view of 3;
  • FIG. 9 is a cross-sectional view showing the step 3 of the method for packaging a substrate of the present invention.
  • Figure 10 is a cross-sectional view showing the step 4 of the method of packaging a substrate of the present invention. detailed description
  • the present invention provides a method for packaging a substrate, comprising the following steps: Step 1. Providing a substrate 1 and a package board 3;
  • Step 2 providing a ring of inorganic insulating film 5 on the package board 3;
  • Step 3 a ring of UV glue 7 is disposed on the package board 3 outside the ring of the inorganic insulating film 5; Step 4, the package board 3 and the substrate 1 are relatively attached; Step 5: The UV glue 7 is irradiated with a UV light source to cure it, thereby encapsulating the substrate 1 of the package board 3.
  • the substrate 1 in the step 1 is a TFT substrate
  • the package board 3 is a glass plate.
  • the substrate 1 is a TFT substrate provided with the OLED device 11.
  • the package board 3 is preliminarily provided with a glue application position 70 for setting a UV glue, and the glue application position 70 serves to provide a positional reference for the inorganic insulating film 5 and the UV glue 7 in the subsequent step. .
  • the step 2 is to form the inorganic insulating film 5 while forming the alignment mark 33 of the package board 3.
  • the inorganic insulating film 5 is made of silicon dioxide SiO 2 or silicon nitride SiNx by chemical vapor deposition CVD, and then etched.
  • the obtained inorganic insulating film 5 has an excellent function of blocking water vapor and oxygen, and its width is 20 im! ⁇ 2000um, height is 3im! ⁇ 50um and the width and height of the inorganic insulating film 5 on the same package board 3 are uniform.
  • the inorganic insulating film 5 is disposed on the inner side of the glue application position 70, and the outer edge thereof is spaced apart from the center line of the glue application position 70 by 0.5 mm to 5 mm.
  • Fig. 6 is a schematic cross-sectional view showing an embodiment of the step 2, in which the inorganic insulating film 5 is directly formed on the surface of the package board 3.
  • FIG. 7 is a schematic cross-sectional view of another embodiment of the step 2, in which a metal layer 31 is first disposed on the surface of the package board 3.
  • the material of the metal layer 31 is molybdenum.
  • the inorganic insulating thin The film 5 is disposed on the metal layer 31.
  • a ring of UV glue 7 is disposed on the package board 3 outside the inorganic insulating film 5 by coating. More specifically, the UV glue 7 is applied to the glue application position 70 and the height of the UV glue 7 is greater than the height of the inorganic insulating film 5.
  • the width of the UV glue 7 is controlled to be 1 mm to 5 mm.
  • step 5 the operation of step 5 is performed, and the UV glue 7 is irradiated with a UV light source to be cured, thereby encapsulating the substrate 1 of the package board 3.
  • the method for packaging a substrate provided by the present invention is simple and easy to operate, and has high operability.
  • the utility model combines the advantages of the UV package and the frit package by providing a ring of inorganic insulating film on the package board, and the inorganic insulating film is provided. It is disposed inside the UV adhesive and uses the inorganic insulating film to block water vapor and oxygen, thereby significantly improving the packaging effect, improving the ability to block water vapor and oxygen, and prolonging the service life of the OLED device, and the method can be applied to all the bottoms without using a desiccant. OLED devices for emission, top emission and double-sided display.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

本发明提供一种基板的封装方法，包括如下步骤：步骤1、提供基板(1)、及封装板(3)；步骤2、在封装板(3)上设置一圈无机绝缘薄膜(5)；步骤3、在该圈无机绝缘薄膜(5)外侧设置一圈UV胶(7)于封装板(3) 上；步骤4、将封装板(3)与基板(1)相对贴合；步骤5、使用UV光源对UV胶(7)进行照射使其固化，从而实现封装板(3)对基板(1)的封装。该封装方法能够改善封装效果，提高阻挡水汽、氧气的能力，延长OLED 器件的使用寿命，且简单易行，可操作性强。

Description

基板的封装方法 技术领域
本发明涉及显示技术领域，尤其涉及一种基板的封装方法。 背景技术
在显示技术领域，液晶显示器 ( Liquid Crystal Display , LCD )与有机 发光二极管显示器（ Organic Light Emitting Diode , OLED )等平板显示技术 已经逐步取代 CRT显示器。 平面光源技术是新型的光源，其技术硏发已经 接近巿场化量产水平。 在平板显示与平面光源技术当中，对于两片平板玻 璃的粘结是一项很重要的技术，其封装效果将直接影响器件的性能。
紫外光 (UV)固化技术是 LCD/OLED封装最早也是最常用的技术 ,其具 有如下特点：不使用溶剂或使用少量溶剂，减少了溶剂对环境的污染；耗 能少，可低温固化，适用于对热敏感的材料；固化速度快，效率高，可在 高速生产线上使用，固化设备占地面积小等。 但是，由于紫外光固化中所 使用 UV胶是有机材料，其固化后分子间隙较大，水汽与氧气比较容易透 过间隙抵达内部密封区域。 所以， UV封装比较适合用于对水汽、 氧气不太 敏感的应用领域，比如 LCD。 由于 OLED器件对水汽、 氧气非常敏感，所 以采用 uv封装时，器件内部通常会有干燥剂，以减小透过间隙抵达内部 密封区域的水汽，从而延长 OLED器件的使用寿命。
目前，针对 OLED的 UV封装，一个主要的硏究方向就是寻找水汽透 过率更 ί氏的 UV胶材，这需要 UV胶的有机分子在固化后，分子之间堆积得 更紧密，从而使分子之间的水汽渗透通道变窄， 7 汽渗透速率变小。
Frit封装技术是目前正在硏发的新型平板玻璃封装技术，在中国大陆几 乎没有相关的文献报导。 Frit封装是将玻璃粉配成一定粘度的溶液，涂覆在 封装玻璃上，加热除去溶剂，然后与待封装玻璃贴合，利用激光 ( Laser ) 将 frit玻璃粉瞬间烧至融化，从而将两片平板玻璃粘结在一起。 由于 Frit 封装技术采用的是无机封装介质，所以其阻止水汽与氧气的能力很强，特 别适合对水汽、 氧气敏感的 OLED0 目前， frit封装的技术专利被国外少数 几家公司垄断。
图 1、 图 2为一种现有的基板的 UV封装方法的示意图，该封装方法仅 在封装板 100表面上涂覆 UV胶 200 ,然后与 TFT基板 300相对贴合，再 经 UV光照射使 UV胶固化，从而实现将封装板 100与 TFT基板 300的封 装。由于设置于 TFT基板 300上的 OLED器件 400对水汽、氧气非常敏感， 但该现有的 UV封装方法阻止水汽、 氧气的能力较差，所以通常需要设置 干燥剂，以减小透过 UV胶抵达内部密封区域的水汽，延长 OLED器件的 使用寿命，由此引发的问题是，该现有的 UV封装方法只适合于底发射的 OLED器件结构。 而 Frit封装的阻水效果虽好，但是制程复杂、 设备昂贵。 发明内容
本发明的目的在于提供一种基板的封装方法，通过该方法能够改善封 装效果，提高阻挡水汽、 氧气的能力，延长 OLED器件的使用寿命，并且 该方法可以不使用干燥剂，适用于所有底发射、顶发射及双面显示的 OLED 器件。
为实现上述目的，本发明提供一种基板的封装方法，包括如下步骤： 步骤 1、 提供基板、 及封装板；
步骤 2、 在封装板上设置一圈无机绝缘薄膜；
步骤 3、 在该圈无机绝缘薄膜外侧设置一圈 UV胶于封装板上； 步骤 4、 将封装板与基板相对贴合；
步骤 5、使用 UV光源对 UV胶进行照射使其固化，从而实现封装板对 基板的封装。
所述基板为 TFT基板。
所述基板为设有 OLED器件的 TFT基板。 所述步骤 1提供的封装板设有用于设置 UV胶的涂胶位置，所述步骤 2 设置的无机绝缘薄膜位于该涂胶位置的内侧，所述步骤 3设置的 UV胶位 于该涂胶位置上。
所述 UV胶采用涂覆的方式设置于封装板上。
所述无机绝缘薄膜的材料为 Si02或 SiNXo
所述步骤 2还包括先在封装板上设置一圈金属层，该无机绝缘薄膜设 置于该金属层上。 所述金属层为钼。
在制作封装板的对位标记的同时形成该无机绝缘薄膜。
所述无机绝缘薄膜采用 CVD镀膜，然后再刻蚀的方式制备。
所述无机绝缘薄膜宽度为 20um〜2000um ,高度为 3um〜50um ,且同一 封装板上的无机绝缘薄膜的宽度、 高度一致。
所述无机绝缘薄膜的外边缘离涂胶位置的中心线距离在 0.5mm〜5mm 之间。
步骤 3中所述 UV胶的高度大于无机绝缘薄膜的高度。
所述步骤 4中封装板与基板贴合后， UV胶宽度控制在 lmm〜5mm0 所述封装板为玻璃板。
本发明还提供一种基板的封装方法，包括如下步骤： 步骤 1、 提供基板、 及封装板；
步骤 2、 在封装板上设置一圈无机绝缘薄膜；
步骤 3、 在该圈无机绝缘薄膜外侧设置一圈 UV胶于封装板上； 步骤 4、 将封装板与基板相对贴合；
步骤 5、使用 UV光源对 UV胶进行照射使其固化，从而实现封装板对 基板的封装；
所述基板为 TFT基板，所述封装板为玻璃板；
所述基板设有 OLED器件；
所述步骤 1提供的封装板设有用于设置 UV胶的涂胶位置，所述步骤 2 设置的无机绝缘薄膜位于该涂胶位置的内侧，所述步骤 3设置的 UV胶位 于该涂胶位置上，所述 UV胶采用涂覆的方式设置于封装板上；
所述无机绝缘薄膜的材料为 Si02或SiNX；
在制作封装板的对位标记的同时形成该无机绝缘薄膜，所述无机绝缘 薄膜采用 CVD镀膜，然后再刻蚀的方式制备；
所述无机绝缘薄膜宽度为 20um〜2000um ,高度为 3um〜50um ,且同一 封装板上的无机绝缘薄膜的宽度、 高度一致,所述步骤 4中封装板与基板贴 合后， UV胶宽度控制在 lmm〜5mm ,步骤 3中所述 UV胶的高度大于无机 绝缘薄膜的高度；
所述无机绝缘薄膜的外边缘离涂胶位置的中心线距离在 0.5mm〜5mm 之间。
本发明的有益效果：本发明提供的基板的封装方法简单易行，可操作 性强，其结合了 UV封装与 frit封装的优点，通过在封装板上设置一圈无机 绝缘薄膜，且将该无机绝缘薄膜设置于 UV胶内侧，利用该无机绝缘薄膜 阻挡水汽、 氧气，从而显著改善封装效果，提高阻挡水汽、 氧气的能力， 延长 OLED器件的使用寿命，并且该方法可以不使用干燥剂，适用于所有 底发射、 顶发射及双面显示的 OLED器件。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本 发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发 明加以限制。 附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明 的技术方案及其他有益效果显而易见。
附图中，
图 1为一种现有的基板的 UV封装方法的俯视示意图； 图 2为一种现有的基板的 UV封装方法的剖面示意图；
图 3为本发明基板的封装方法的流程图；
图 4为本发明基板的封装方法的步骤 1的俯视示意图；
图 5为本发明基板的封装方法的步骤 2的俯视示意图；
图 6为本发明基板的封装方法的步骤 2—实施例的剖面示意图； 图 7为本发明基板的封装方法的步骤 2另一实施例的剖面示意图； 图 8为本发明基板的封装方法的步骤 3的俯视示意图；
图 9为本发明基板的封装方法的步骤 3的剖面示意图；
图 10为本发明基板的封装方法的步骤 4的剖面示意图。 具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明 的优选实施例及其附图进行详细描述。
请参阅图 3至图 10 ,本发明提供一种基板的封装方法，包括如下步骤： 步骤 1、 提供基板 1、 及封装板 3；
步骤 2、 在封装板 3上设置一圈无机绝缘薄膜 5；
步骤 3、 在该圈无机绝缘薄膜 5外侧设置一圈 UV胶 7于封装板 3上； 步骤 4、 将封装板 3与基板 1相对贴合； 步骤 5、使用 UV光源对 UV胶 7进行照射使其固化，从而实现封装板 3对基板 1的封装。
具体的，所述步骤 1中的基板 1为 TFT基板，所述封装板 3为玻璃板。 进一步的，所述基板 1为设有 OLED器件 11的 TFT基板。 如图 4所示， 所述封装板 3预先设有用于设置 UV胶的涂胶位置 70 ,该涂胶位置 70所起 的作用是为后续步骤中设置无机绝缘薄膜 5与 UV胶 7提供位置参照。
请参阅图 5、 图 6 ,所述步骤 2是在制作封装板 3的对位标记 33的同 时形成无机绝缘薄膜 5。所述无机绝缘薄膜 5以二氧化硅 Si02或氮化硅 SiNx 为材料，采用化学气相沉积 CVD镀膜，然后再刻蚀的方式制备。 制得的无 机绝缘薄膜 5具有优越的阻挡水汽、氧气的功能，其宽度为 20im！〜 2000um , 高度为 3im！〜 50um ,且同一封装板 3上的无机绝缘薄膜 5的宽度、高度一致。 特别需要说明的是，所述无机绝缘薄膜 5设置于所述涂胶位置 70的内侧， 其外边缘离涂胶位置 70的中心线距离在 0.5mm〜5mm之间。
图 6为所述步骤 2一实施例的剖面示意图，在该实施例中，所述无机 绝缘薄膜 5直接形成于所述封装板 3表面。
图 7为所述步骤 2另一实施例的剖面示意图，先在所述封装板 3表面 上设置一圈金属层 31 ,优选的，该金属层 31的材料为钼。所述无机绝缘薄 膜 5则设置于该金属层 31上。
请参阅图 8、 图 9 ,所述步骤 3中，采用涂覆的方式在所述无机绝缘薄 膜 5外侧设置一圈 UV胶 7于封装板 3上。更加确切的，所述 UV胶 7涂覆 于所述涂胶位置 70上且所述 UV胶 7的高度大于无机绝缘薄膜 5的高度。
请参阅图 10 ,所述步骤 4中封装板 3与基板 1贴合后，所述 UV胶 7 的宽度控制在 lmm〜5mm0
最后进行步骤 5的操作，使用 UV光源对 UV胶 7进行照射使其固化， 从而实现封装板 3对基板 1的封装。
综上所述，本发明提供的基板的封装方法简单易行，可操作性强，其 结合了 UV封装与 frit封装的优点通过在封装板上设置一圈无机绝缘薄膜 , 且将该无机绝缘薄膜设置于 UV胶内侧，利用该无机绝缘薄膜阻挡水汽、 氧气，从而显著改善封装效果，提高阻挡水汽、 氧气的能力，延长 OLED 器件的使用寿命，并且该方法可以不使用干燥剂，适用于所有底发射、 顶 发射及双面显示的 OLED器件。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形 都应属于本发明后附的权利要求的保护范围。

Claims

杈 利 要 求
1、 一种基板的封装方法，包括如下步骤：
步骤 1、 提供基板、 及封装板；
步骤 2、 在封装板上设置一圈无机绝缘薄膜；
步骤 3、 在该圈无机绝缘薄膜外侧设置一圈 UV胶于封装板上； 步骤 4、 将封装板与基板相对贴合；
步骤 5、使用 UV光源对 UV胶进行照射使其固化，从而实现封装板对 基板的封装。
2、 如权利要求 1所述的基板的封装方法，其中，所述基板为 TFT基 板，所述封装板为玻璃板。
3、 如权利要求 2所述的基板的封装方法，其中，所述基板设有 OLED 器件。
4、如权利要求 1所述的基板的封装方法，其中，所述步骤 1提供的封 装板设有用于设置 UV胶的涂胶位置，所述步骤 2设置的无机绝缘薄膜位 于该涂胶位置的内侧，所述步骤 3设置的 UV胶位于该涂胶位置上，所述 UV胶采用涂覆的方式设置于封装板上。
5、如权利要求 4所述的基板的封装方法，其中，所述无机绝缘薄膜的 材料为 Si02或 SiNx。
6、如权利要求 1所述的基板的封装方法，其中，所述步骤 2还包括先 在封装板上设置一圈金属层，该无机绝缘薄膜设置于该金属层上。
7、 如权利要求 6所述的基板的封装方法，其中，该金属层为钼。
8、如权利要求 1所述的基板的封装方法，其中，在制作封装板的对位 标记的同时形成该无机绝缘薄膜，所述无机绝缘薄膜采用 CVD镀膜，然后 再刻蚀的方式制备。
9、如权利要求 1所述的基板的封装方法，其中，所述无机绝缘薄膜宽 度为 20um〜2000um ,高度为 3um〜50um ,且同一封装板上的无机绝缘薄膜 的宽度、 高度一致,所述步骤 4中封装板与基板贴合后， UV胶宽度控制在 lmm〜5mm ,步骤 3中所述 UV胶的高度大于无机绝缘薄膜的高度。
10、 如权利要求 4所述的基板的封装方法，其中，所述无机绝缘薄膜 的外边缘离涂胶位置的中心线距离在 0.5mm〜5mm之间。
11、 一种基板的封装方法，包括如下步骤：
步骤 1、 提供基板、 及封装板；
步骤 2、 在封装板上设置一圈无机绝缘薄膜；
步骤 3、 在该圈无机绝缘薄膜外侧设置一圈 UV胶于封装板上； 步骤 4、 将封装板与基板相对贴合；
步骤 5、使用 UV光源对 UV胶进行照射使其固化，从而实现封装板对 基板的封装；
其中，所述基板为 TFT基板，所述封装板为玻璃板；
其中，所述基板设有 OLED器件；
其中，所述步骤 1提供的封装板设有用于设置 UV胶的涂胶位置，所 述步骤 2设置的无机绝缘薄膜位于该涂胶位置的内侧，所述步骤 3设置的 UV胶位于该涂胶位置上，所述 UV胶采用涂覆的方式设置于封装板上； 其中，所述无机绝缘薄膜的材料为 Si02或SiNX；
其中，在制作封装板的对位标记的同时形成该无机绝缘薄膜，所述无 机绝缘薄膜采用 CVD镀膜，然后再刻蚀的方式制备；
其中，所述无机绝缘薄膜宽度为 20um〜2000um ,高度为 3um〜50um , 且同一封装板上的无机绝缘薄膜的宽度、 高度一致,所述步骤 4中封装板与 基板贴合后， UV胶宽度控制在 lmm〜5mm ,步骤 3中所述 UV胶的高度大 于无机绝缘薄膜的高度；
其中 ，所述无机绝缘薄膜的外边缘离涂胶位置的中心线距离在 0.5mm〜5mm之间。
PCT/CN2014/081445 2014-06-17 2014-07-02 基板的封装方法 Ceased WO2015192401A1 (zh)

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