WO2015190852A1 - Fet à canal contraint à plusieurs nanofeuilles cristallines et leurs procédés de fabrication - Google Patents
Fet à canal contraint à plusieurs nanofeuilles cristallines et leurs procédés de fabrication Download PDFInfo
- Publication number
- WO2015190852A1 WO2015190852A1 PCT/KR2015/005902 KR2015005902W WO2015190852A1 WO 2015190852 A1 WO2015190852 A1 WO 2015190852A1 KR 2015005902 W KR2015005902 W KR 2015005902W WO 2015190852 A1 WO2015190852 A1 WO 2015190852A1
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- gate
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Abstract
L'invention concerne un transistor à effet de champ qui inclut une couche de corps comportant une zone de canal semi-conductrice cristalline contrainte, et un empilement de grille sur la zone de canal. L'empilement de grille inclut une couche de grille semi-conductrice cristalline dont le réseau cristallin est différent de celui de la zone de canal, et une couche diélectrique de grille cristalline entre la couche de grille et la zone de canal. L'invention concerne également des dispositifs et procédés de fabrication associés.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201580029454.4A CN106463543B (zh) | 2014-06-11 | 2015-06-11 | 结晶多纳米片应变沟道fet及其制造方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462010585P | 2014-06-11 | 2014-06-11 | |
| US62/010,585 | 2014-06-11 | ||
| US14/729,652 | 2015-06-03 | ||
| US14/729,652 US9570609B2 (en) | 2013-11-01 | 2015-06-03 | Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2015190852A1 true WO2015190852A1 (fr) | 2015-12-17 |
Family
ID=54833856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2015/005902 WO2015190852A1 (fr) | 2014-06-11 | 2015-06-11 | Fet à canal contraint à plusieurs nanofeuilles cristallines et leurs procédés de fabrication |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR102223971B1 (fr) |
| CN (1) | CN106463543B (fr) |
| TW (1) | TWI685972B (fr) |
| WO (1) | WO2015190852A1 (fr) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9905643B1 (en) | 2016-08-26 | 2018-02-27 | International Business Machines Corporation | Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors |
| CN108695377A (zh) * | 2017-04-05 | 2018-10-23 | 三星电子株式会社 | 半导体装置 |
| CN109427871A (zh) * | 2017-08-29 | 2019-03-05 | 三星电子株式会社 | 半导体装置 |
| US10651291B2 (en) | 2017-08-18 | 2020-05-12 | Globalfoundries Inc. | Inner spacer formation in a nanosheet field-effect transistor |
| EP3719851A3 (fr) * | 2019-03-13 | 2020-12-30 | United Microelectronics Corp. | Structure semi-conductrice et procédé associé |
| WO2023010980A1 (fr) * | 2021-08-05 | 2023-02-09 | International Business Machines Corporation | Dispositifs à transistors à effet de champ complémentaires |
| US11705504B2 (en) | 2021-12-02 | 2023-07-18 | International Business Machines Corporation | Stacked nanosheet transistor with defect free channel |
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| US9461114B2 (en) * | 2014-12-05 | 2016-10-04 | Samsung Electronics Co., Ltd. | Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same |
| CN106409907B (zh) * | 2015-08-03 | 2021-06-08 | 三星电子株式会社 | 用于半导体装置的堆叠件及其形成方法 |
| KR102435521B1 (ko) * | 2016-02-29 | 2022-08-23 | 삼성전자주식회사 | 반도체 소자 |
| US9978833B2 (en) * | 2016-03-11 | 2018-05-22 | Samsung Electronics Co., Ltd. | Methods for varied strain on nano-scale field effect transistor devices |
| JP6780015B2 (ja) | 2016-04-25 | 2020-11-04 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 水平ゲートオールアラウンドデバイスのナノワイヤの空隙スペーサ形成 |
| US9882000B2 (en) * | 2016-05-24 | 2018-01-30 | Northrop Grumman Systems Corporation | Wrap around gate field effect transistor (WAGFET) |
| US9853114B1 (en) * | 2016-10-24 | 2017-12-26 | Samsung Electronics Co., Ltd. | Field effect transistor with stacked nanowire-like channels and methods of manufacturing the same |
| US10008603B2 (en) * | 2016-11-18 | 2018-06-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-gate device and method of fabrication thereof |
| EP3369702A1 (fr) * | 2017-03-03 | 2018-09-05 | IMEC vzw | Espaceurs internes pour dispositifs semi-conducteurs à nanofils |
| US9947804B1 (en) * | 2017-07-24 | 2018-04-17 | Globalfoundries Inc. | Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure |
| CN207458949U (zh) * | 2017-09-26 | 2018-06-05 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板和显示装置 |
| US10566330B2 (en) * | 2017-12-11 | 2020-02-18 | Samsung Electronics Co., Ltd. | Dielectric separation of partial GAA FETs |
| US10304833B1 (en) * | 2018-02-19 | 2019-05-28 | Globalfoundries Inc. | Method of forming complementary nano-sheet/wire transistor devices with same depth contacts |
| US11101359B2 (en) | 2018-11-28 | 2021-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate-all-around (GAA) method and devices |
| US11348803B2 (en) * | 2019-05-20 | 2022-05-31 | Applied Materials, Inc. | Formation of bottom isolation |
| KR102183131B1 (ko) * | 2019-06-24 | 2020-11-26 | 포항공과대학교 산학협력단 | 에피텍셜 구조를 갖는 소스/드레인 영역이 축소된 전계효과 트랜지스터 및 이의 제조방법 |
| CN112582265B (zh) * | 2019-09-27 | 2023-06-02 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| CN112885901B (zh) * | 2021-04-29 | 2021-07-30 | 中芯集成电路制造(绍兴)有限公司 | 高电子迁移率晶体管及其形成方法 |
| CN113284806B (zh) * | 2021-05-18 | 2022-04-05 | 复旦大学 | 环栅器件及其源漏制备方法、器件制备方法、电子设备 |
| WO2022241630A1 (fr) * | 2021-05-18 | 2022-11-24 | 复旦大学 | Dispositif à grille enrobante et son procédé de préparation de source/drain, procédé de préparation de dispositif et dispositif électronique |
| WO2023035269A1 (fr) * | 2021-09-13 | 2023-03-16 | 上海集成电路制造创新中心有限公司 | Dispositif à grille enrobante et son procédé de préparation de source/drain, procédé de préparation de dispositif et dispositif électronique |
| US11837604B2 (en) | 2021-09-22 | 2023-12-05 | International Business Machine Corporation | Forming stacked nanosheet semiconductor devices with optimal crystalline orientations around devices |
| US20230086888A1 (en) * | 2021-09-23 | 2023-03-23 | International Business Machines Corporation | Dual strained semiconductor substrate and patterning |
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2015
- 2015-06-11 KR KR1020150082680A patent/KR102223971B1/ko active IP Right Grant
- 2015-06-11 CN CN201580029454.4A patent/CN106463543B/zh active Active
- 2015-06-11 TW TW104118904A patent/TWI685972B/zh active
- 2015-06-11 WO PCT/KR2015/005902 patent/WO2015190852A1/fr active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9905643B1 (en) | 2016-08-26 | 2018-02-27 | International Business Machines Corporation | Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors |
| US9985138B2 (en) | 2016-08-26 | 2018-05-29 | International Business Machines Corporation | Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors |
| US10141445B2 (en) | 2016-08-26 | 2018-11-27 | International Business Machines Corporation | Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors |
| US10249762B2 (en) | 2016-08-26 | 2019-04-02 | International Business Machines Corporation | Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors |
| CN108695377A (zh) * | 2017-04-05 | 2018-10-23 | 三星电子株式会社 | 半导体装置 |
| CN108695377B (zh) * | 2017-04-05 | 2024-02-23 | 三星电子株式会社 | 半导体装置 |
| US10651291B2 (en) | 2017-08-18 | 2020-05-12 | Globalfoundries Inc. | Inner spacer formation in a nanosheet field-effect transistor |
| US11908952B2 (en) | 2017-08-29 | 2024-02-20 | Samsung Electronics Co., Ltd. | Semiconductor devices and manufacturing methods thereof |
| CN109427871A (zh) * | 2017-08-29 | 2019-03-05 | 三星电子株式会社 | 半导体装置 |
| EP3719851A3 (fr) * | 2019-03-13 | 2020-12-30 | United Microelectronics Corp. | Structure semi-conductrice et procédé associé |
| US11527652B2 (en) | 2019-03-13 | 2022-12-13 | United Microelectronics Corp. | Semiconductor process |
| WO2023010980A1 (fr) * | 2021-08-05 | 2023-02-09 | International Business Machines Corporation | Dispositifs à transistors à effet de champ complémentaires |
| US11705504B2 (en) | 2021-12-02 | 2023-07-18 | International Business Machines Corporation | Stacked nanosheet transistor with defect free channel |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201607039A (zh) | 2016-02-16 |
| CN106463543A (zh) | 2017-02-22 |
| TWI685972B (zh) | 2020-02-21 |
| CN106463543B (zh) | 2020-04-07 |
| KR20150142632A (ko) | 2015-12-22 |
| KR102223971B1 (ko) | 2021-03-10 |
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