WO2015190615A2 - Réseau de lasers à émission de surface, appareil laser à semi-conducteurs et appareil d'acquisition d'informations de sujet comprenant l'appareil laser à semi-conducteurs - Google Patents

Réseau de lasers à émission de surface, appareil laser à semi-conducteurs et appareil d'acquisition d'informations de sujet comprenant l'appareil laser à semi-conducteurs Download PDF

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Publication number
WO2015190615A2
WO2015190615A2 PCT/JP2015/067104 JP2015067104W WO2015190615A2 WO 2015190615 A2 WO2015190615 A2 WO 2015190615A2 JP 2015067104 W JP2015067104 W JP 2015067104W WO 2015190615 A2 WO2015190615 A2 WO 2015190615A2
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surface emitting
solid
emitting laser
excitation source
medium
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PCT/JP2015/067104
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WO2015190615A3 (fr
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Tatsuro Uchida
Mamoru Uchida
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Canon Kabushiki Kaisha
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Publication of WO2015190615A2 publication Critical patent/WO2015190615A2/fr
Publication of WO2015190615A3 publication Critical patent/WO2015190615A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/042—Arrangements for thermal management for solid state lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08072—Thermal lensing or thermally induced birefringence; Compensation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0619—Coatings, e.g. AR, HR, passivation layer
    • H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/09408—Pump redundancy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
    • H01S3/1623—Solid materials characterised by an active (lasing) ion transition metal chromium, e.g. Alexandrite
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Definitions

  • he present invention relates to a surface emitting laser array, a solid-state laser apparatus, and a subject information acquisition apparatus including the solid-state laser apparatus.
  • output through optical excitation of a laser medium is expected to be applied to various fields including medical care.
  • Patent Literature 1 there is disclosed a configuration in which light emitted from a
  • semiconductor laser is radiated via a lens, a light guiding unit, and the like as a method. of optically exciting a laser medium.
  • Patent Literature 2 there is disclosed a configuration in which direct excitation of a laser medium is made by light emitted from a vertical cavity surface emitting laser (VCSEL) .
  • the configuration disclosed in Patent Literature 2 can realize downsizing of a solid-state laser apparatus and improvement in energy conversion efficiency through use of a surface emitting laser.
  • a solid-state laser apparatus including: a resonator including a output coupler; a medium portion including a plate-like laser medium arranged in the resonator; and a light, excitation source portion, in which a light emitting portion of the light excitation source portion is arranged in contact with the medium portion.
  • a surface emitting laser array including a plurality of two-dimensional surface emitting laser arrays, in which the plurality of two- dimensional surface emitting laser arrays are divided in drive control regions, and the surface emitting laser array further includes wiring that enables independent drive control of the plurality of two- dimensional surface emitting laser arrays for each of the drive control regions.
  • the solid-state laser apparatus capable of uniformizing the heat distribution in the laser medium to suppress generation of the thermal lens effect in the laser medium, to thereby suppress degradation in beam quality of output laser light
  • the subject information acquisition apparatus including the solid-state laser apparatus.
  • the surface emitting laser array capable of suppressing generation of the thermal lens effect and degradation in beam quality of output laser light of the solid-state laser apparatus.
  • FIG. 1 is a schematic view for illustrating a
  • FIG. 2 is an enlarged view of a region (A) in FIG. 1.
  • FIG. 3A is a sectional view of the solid-state laser apparatus according to an embodiment of the present invention during manufacture.
  • FIG. 3B is a sectional view of the solid-state laser apparatus according to the embodiment of the present invention when completed.
  • FIG. 3C is an appearance view of the solid-state laser apparatus according to the embodiment of the present invention when completed.
  • FIG. 4 is a schematic view for illustrating divided regions of a surface emitting laser array forming the solid-state laser apparatus according to Example 1 of the present invention.
  • FIG. 5 is a schematic view for illustrating another example of the divided regions of the surface emitting laser array forming the solid-state laser apparatus according to Example 1 of the present invention.
  • FIG. 6 is a schematic view for illustrating a
  • embodiment of the present invention can, in suppressing generation of thermal lens effect, adopt at least any one of the following configurations (1) to (3) using, as a light excitation source, a surface emitting laser array that is a semiconductor laser light source.
  • pitches between a plurality of light emitting portions of semiconductor laser elements are not the same (not a configuration in which all the plurality of pitches are the same but a configuration in which at least part of the plurality of pitches are different), and (3) a configuration in which a
  • plurality of surface emitting laser arrays divided in drive control regions are independently controlled to be driven for each of the drive control regions.
  • the configuration in contact via another member means a state in which space between a light emitting portion of a surface emitting laser element and an active medium is filled with a solid and no space is left (the same applies to portions other than a light emitting portion) .
  • the light emitting portion of the surface emitting laser element means a region in which an active layer emits light. A region that does not emit light in the active layer is not referred to as a light emitting portion.
  • heat distribution in the active medium can be uniformized to suppress generation of the thermal lens effect in the active medium, to thereby suppress degradation in beam quality of output light of the solid-state laser apparatus .
  • the solid-state laser apparatus can be downsized and can achieve high output laser light at lower cost compared with the related art.
  • the solid-state laser apparatus by increasing the area of the active medium, higher output can be achieved, and in addition, a shorter resonator can be formed, which is advantageous in shortening a pulse compared with a related-art disk laser .
  • distribution in the laser medium can be uniformized, generation of the thermal lens effect in the laser medium can be suppressed, degradation in beam quality of output light of the solid-state laser can be
  • Example 1 a description is given of a configuration in which the light emitting portion of each of the surface emitting laser elements forming the surface emitting laser array is arranged in contact with the active medium as the laser medium and a configuration in which a vertical cavity surface emitting laser
  • VCSEL VCSEL array that oscillates at a wavelength of 410 nm is used as the light excitation source and an
  • alexandrite crystal is used as the active medium.
  • FIG. 1 is a schematic view for illustrating a .
  • the solid-state laser apparatus includes a light excitation source portion 100 that includes a surface emitting laser array as a light excitation source, a resonator that includes a output coupler 104 and a reflective layer 106, and a medium portion 102 that includes an active medium as a solid-state laser medium arranged in the resonator.
  • the output coupler 104 (output mirror) is formed of a TaaOs/SiC ⁇ multilayer film.
  • the solid-state laser medium in the present invention is, for example, in the shape of a thin plate (including a disk-like shape) having a thickness of several
  • the light excitation source portion 100 and the medium portion 102 are stacked via the reflective layer 106 and an antireflective layer 108.
  • FIG. 2 is a schematic view in which a region (A) in FIG.
  • the light excitation source portion 100 of the solid-state laser apparatus includes the surface emitting laser array.
  • Each of surface emitting lasers of the surface emitting laser array includes a GaN substrate 110, a lower AlGaN/GaN-based multilayer film reflector 112, an InGaN/GaN active layer 114, an upper dielectric multilayer film reflector 116, a light exiting side electrode 118, and an electrode 120.
  • the upper dielectric multilayer film reflector 116 and the lower AlGaN/GaN-based multilayer film reflector 112 form a pair of reflectors.
  • the InGaN/GaN active layer 114 is arranged
  • InGaN/GaN active layer 114 in each of the surface emitting lasers are formed so as to have a mesa
  • the lower spacer layer 121, the lower AlGaN/GaN-based multilayer film reflector 112, and the GaN substrate 110 are shared by the surface emitting lasers.
  • the light exiting side electrode 118 individually drives the surface emitting laser, and thus, is separated from other light exiting side electrodes 118 in other surface emitting lasers.
  • the electrode 120 is an electrode shared by the surface emitting lasers.
  • Laser light emitted from the light excitation source portion 100 enters the resonator that is formed of the output coupler 104 and the reflective layer 106 to excite the medium portion 102.
  • the excited medium portion 102 returns to a ground state, light of a predetermined wavelength is emitted.
  • the light emitted from the medium portion 102 reciprocates in the
  • the light excitation source portion 100 including the surface emitting laser array as the light excitation source and the medium portion 102 including the active medium as the laser medium are separately manufactured.
  • the solid-state laser apparatus is manufactured.
  • the light excitation source portion 100 and the medium portion 102 of substantially the same shape are separately provided.
  • the solid-state laser apparatus is manufactured without using an additional optical system such as a condenser lens.
  • the active medium as the laser medium is an alexandrite crystal
  • the medium portion 102 is in the shape of a circular disk having a thickness of 2 mm and a diameter of 40 mm.
  • he medium portion 102 has a thickness of 2 mm in order that the medium portion 102 efficiently absorb laser light (having a wavelength of 410 nm) emitted from the light excitation source portion 100 that includes the surface emitting laser array as the light excitation source. From that viewpoint, it is preferred that the medium portion 102 have such a thickness so that an absorptance of 90% or more is obtained with regard to an oscillation wavelength of the light excitation source portion 100.
  • the alexandrite crystal has a higher thermal conductivity than that of a Yb:YAG crystal, and thus, even when the medium portion 102 is formed of an active medium formed of a thick crystal, the problem of heat distribution in the laser medium does not arise.
  • the medium portion 102 has a diameter of 40 mm in order to achieve an optical output of, for example, 10 mJ or more, and the diameter of the medium portion 102 can undergo design changes depending on a use therefor.
  • a thickness of each of the multilayer films of the reflective layer 106 is an optical thickness that is 1/4 of the oscillation wavelength ⁇ 2.
  • a Nb 2 0 5 layer as the antireflective layer 108 having an antireflective characteristic with regard to an oscillation wavelength ⁇ ( ⁇ 1 410 nm in this
  • the light excitation source portion 100 including the surface emitting laser array as the light excitation source was formed by vapor deposition on the reflective layer 106.
  • a thickness of the light excitation source portion 100 including the surface emitting laser array as the light excitation source was formed by vapor deposition on the reflective layer 106.
  • antireflective layer 108 is an optical thickness that is 1/4 of the oscillation wavelength ⁇ .
  • a semiconductor laser excitation solid-state disk laser By bonding together the light excitation source portion 100 including the surface emitting laser array and the medium portion 102 including the active medium, a semiconductor laser excitation solid-state disk laser can be achieved in which the plurality of surface emitting laser elements included in the surface
  • emitting laser array are formed in contact with the active medium.
  • the reflective layer 106 is "arranged in contact" with the light emitting portion of the light excitation source portion 100 and with the medium portion 102. In other words, the reflective layer 106 is arranged between the light excitation source portion 100 and the medium portion 102.
  • the antireflective layer 108 is "arranged in contact" with the light excitation source portion.100 and the reflective layer 106. In other words, the antireflective layer 108 is arranged between the light excitation source portion 100 and the reflective layer [0030]Note that, it is preferred that only the reflective layer 106 having a reflective characteristic with regard to light emitted from the medium portion 102 be formed between the upper dielectric multilayer film reflector 116 of the light excitation source portion 100 and the medium portion 102. Alternatively, it is preferred that only the reflective layer 106 and the antireflective layer 108 having the function of
  • a material having a low thermal conductivity means one having a thermal conductivity that is lower than those of the upper dielectric multilayer film reflector 116 and the medium portion 102.
  • FIG. 3A is a sectional view of the solid-state laser apparatus according to an
  • FIG. 3B is a sectional view of the solid-state laser apparatus according to the embodiment of the present invention when completed.
  • FIG. 3C is an appearance view of the solid-state laser apparatus according to the embodiment of the present invention when completed.
  • the medium portion 102 having the reflective layer 106 and the antireflective layer 108 formed thereon is dropped in a jig 300 formed of oxygen-free copper.
  • the light excitation source portion 100 is affixed to a ig 302 formed of oxygen-free copper with solder (not shown), and the jig 300 and the jig 302 are fixed to each other with screws 304. In this way, the light excitation source portion 100 and the medium portion 102 can be bonded together.
  • Example 2 a configuration is described in which the light emitting portions of the surface emitting laser elements forming the surface emitting laser array that is the light excitation source are arranged so that pitches between the light emitting portions of the surface emitting laser elements are different in the surface emitting laser array.
  • the pitches between the surface emitting laser elements forming the surface emitting laser array that is the light excitation source so as to be different (not a configuration in which all the plurality of pitches are the same but a configuration in which at least part thereof are different) , heat distribution caused by the excitation can be
  • FIG. 4 is a schematic view for illustrating divided regions of the surface emitting laser array forming the solid-state laser apparatus according to Example 1 of the present invention.
  • the solid-state laser apparatus formed in this way current is injected at the same time into the plurality of surface emitting laser elements forming the surface emitting laser array that is the light excitation source.
  • the element-to-element pitch of the surface emitting laser elements forming the surface emitting laser array is set to be larger at the center at which influence of heat from surrounding elements is great and is set to be smaller at the outer peripheral
  • the surface emitting laser array formed in the shape of a circular disk having a diameter of 40 mm is coaxially divided into ten toroidal regions (400, 402,.404, 406, 408, 410, 412, 414, 416, and 418) each having a width of 2 mm, by setting values of the element-to-element pitches of the respective regions as shown in Table 1, the effect of the present invention described above is achieved.
  • the injected current has a fixed value, which is, in this case, 15 mA.
  • the present invention is not limited thereto, and the amount of the injected current is set appropriately depending on the output of the solid-state laser apparatus.
  • regions having different element-to-element pitches are coaxial toroidal regions each having a width of 2 mm, but the present invention is not limited thereto.
  • the width of the coaxial toroidal regions can be changed in accordance with the fixed amount of the injected current. In some cases, the width of the regions is not required to be fixed and the regions may have different widths.
  • the regions are not required to be coaxial toroidal regions, and, as illustrated in FIG. 5, regions with different element-to-element pitches may be formed in a lattice (checkered or chessboard) -like manner and a fixed value of current may be injected into the respective regions.
  • Example 2 in addition to the configuration of Example 1.
  • the light emitting portions of the surface emitting laser elements forming the surface emitting laser array are arranged in contact with the active medium as the laser medium, and the pitches between light emitting portions of the semiconductor laser elements are different.
  • Example 3 a case is described in which the surface emitting laser array that is the light excitation source is formed of a plurality of two-dimensional surface emitting laser arrays divided in drive control regions and wiring that enables independent drive control of the two-dimensional surface emitting laser arrays for each of the drive control regions is formed. Points different from those of Example 2 are described in the following. In Example 3, points that are
  • Example 2 is described in Example 2 but are not described in the following are similar to those in Example 2.
  • the solid-state laser apparatus has wiring (not shown) that enables independent drive control of the two-dimensional surface emitting laser arrays for each of the drive control regions, and the drive control regions are electrically isolated from one another .
  • surface emitting laser array formed in the shape of a circular disk having a diameter of 40 mm is coaxially divided into ten toroidal regions (400, 402, 404, 406, 408, 410, 412, 414, 416, and 418) each having a width of 2 mm, by setting values of current injected into the respective regions (each being a separate drive control region) as shown in Table 2, the effect of the present invention is achieved.
  • the element-to-element pitch of the surface emitting laser elements is fixed in this example, and is, in this case, 50 ⁇ .
  • pitch of the surface emitting laser elements is fixed to be 50 ⁇ , but the present invention is not limited thereto.
  • regions having different values of injected current are coaxial toroidal regions each having a width of 2 mm, but the present invention is not limited thereto.
  • the width of the coaxial toroidal regions can be changed in accordance with the fixed element-to-element pitch. In some cases, the width of the regions is not required to be fixed and the regions may have different widths.
  • the regions are not required to be coaxial toroidal regions, and, as illustrated in FIG. 5, regions 500 with different value of injected currents may be formed so that the value of injected current can be ' changed in a lattice (checkered or chessboard) -like manner and the element-to-element pitches in the
  • FIG. 5 is a schematic view for illustrating another example of the divided regions of the surface emitting laser array forming the solid-state laser apparatus according to Example 1 of the present invention.
  • Example 4 by combining the configurations described in Example 2 and Example 3, a solid-state laser
  • the surface emitting laser array that is the light excitation source adopts a configuration in., which a plurality of surface emitting laser arrays divided in drive control regions are independently .
  • the element-to- element pitch of the surface emitting laser elements in each of the divided drive control regions is set to be larger at a center at which influence of heat from surrounding elements is great and is set to be smaller at an outer peripheral portion at which the influence of heat from surrounding elements is small.
  • Adoption of such a configuration can uniformize, compared with the cases of Examples 2 and 3, the heat distribution in the active medium caused by the
  • Example 5 an exemplary configuration of a subject information acquisition apparatus formed using the solid-state laser apparatuses in Examples 1 to 4 is described .
  • FIG. 6 is a schematic view for illustrating a
  • Pulse light 602 generated from a light source 600 is radiated to a subject 606 via an optical device 604.
  • An acoustic wave 610 generated from subject tissue 608 that absorbs optical energy propagating and scattering in the subject 606 is detected by a plurality of acoustic wave detectors 612.
  • Signals detected by the acoustic wave detectors 612 are analyzed by a signal processing portion 614.
  • Information based on the analysis is displayed on a display device 616.
  • photoacoustic tomography enables, through the series of processes, visualization of information corresponding to optical characteristic values in the subject.
  • PAT photoacoustic tomography

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Lasers (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention porte sur un appareil laser à semi-conducteurs qui peut uniformiser la répartition de chaleur dans un milieu laser pour supprimer la génération d'un effet de lentille thermique dans le milieu laser, ce qui permet de supprimer la dégradation de la qualité de faisceau de la lumière laser de sortie, sur un appareil d'acquisition d'informations de sujet comprenant l'appareil laser à semi-conducteurs et sur un réseau de lasers à émission de surface qui peut supprimer la génération d'un effet de lentille thermique pour supprimer la dégradation de la qualité de faisceau de la lumière laser de sortie d'un appareil laser à semi-conducteurs. L'appareil laser à semi-conducteurs comprend : un résonateur comprenant un coupleur de sortie; une partie de support comprenant un support laser en forme de plaque agencé dans le résonateur; et une partie de source d'excitation lumineuse comprenant un réseau de lasers à émission de surface. Dans l'appareil laser à semi-conducteurs, une partie électroluminescente de la partie de source d'excitation lumineuse est agencée de sorte à être en contact avec la partie de support.
PCT/JP2015/067104 2014-06-11 2015-06-09 Réseau de lasers à émission de surface, appareil laser à semi-conducteurs et appareil d'acquisition d'informations de sujet comprenant l'appareil laser à semi-conducteurs WO2015190615A2 (fr)

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JP2014-120571 2014-06-11
JP2015-106465 2015-05-26
JP2015106465A JP2016015476A (ja) 2014-06-11 2015-05-26 面発光レーザアレイ、固体レーザ装置、およびそれを備えた被検体情報取得装置

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Citations (2)

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US5553088A (en) 1993-07-02 1996-09-03 Deutsche Forschungsanstalt Fuer Luft- Und Raumfahrt E.V. Laser amplifying system
JPH1084169A (ja) 1996-07-26 1998-03-31 Commiss Energ Atom 直軸キャビティ半導体レーザーによる光学的ポンピングを備えた固体マイクロレーザー

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US5115445A (en) * 1988-02-02 1992-05-19 Massachusetts Institute Of Technology Microchip laser array
US5256164A (en) * 1988-02-02 1993-10-26 Massachusetts Institute Of Technology Method of fabricating a microchip laser
US4847851A (en) * 1988-05-19 1989-07-11 University Of South Florida Butt-coupled single transverse mode diode pumped laser
CN101180778A (zh) * 2005-03-30 2008-05-14 诺瓦光电技术公司 稳频竖直扩展腔表面发射激光器
US20070280305A1 (en) * 2006-06-05 2007-12-06 Oved Zucker Q-switched cavity dumped laser array
DE102010042453A1 (de) * 2010-10-14 2012-04-19 Robert Bosch Gmbh Laserzündeinrichtung für eine Brennkraftmaschine und Betriebsverfahren hierfür
DE102010043058A1 (de) * 2010-10-28 2012-05-03 Robert Bosch Gmbh Laserzündkerze und Betriebsverfahren hierfür
WO2012068563A1 (fr) * 2010-11-19 2012-05-24 Trilumina Corporation Pompage optique d'un matériau d'un laser à solide utilisant un réseau de lasers adressable
WO2014018684A1 (fr) * 2012-07-24 2014-01-30 Joseph John R Réseau multifaisceau d'éléments vcsel à émission par le haut

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US5553088A (en) 1993-07-02 1996-09-03 Deutsche Forschungsanstalt Fuer Luft- Und Raumfahrt E.V. Laser amplifying system
JPH1084169A (ja) 1996-07-26 1998-03-31 Commiss Energ Atom 直軸キャビティ半導体レーザーによる光学的ポンピングを備えた固体マイクロレーザー

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