JP6246228B2 - 自己配置励起光学系及び高利得を具備する光励起固体レーザ装置 - Google Patents
自己配置励起光学系及び高利得を具備する光励起固体レーザ装置Info
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- JP6246228B2 JP6246228B2 JP2015546114A JP2015546114A JP6246228B2 JP 6246228 B2 JP6246228 B2 JP 6246228B2 JP 2015546114 A JP2015546114 A JP 2015546114A JP 2015546114 A JP2015546114 A JP 2015546114A JP 6246228 B2 JP6246228 B2 JP 6246228B2
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- 230000003287 optical effect Effects 0.000 title description 16
- 238000005086 pumping Methods 0.000 title description 2
- 230000005855 radiation Effects 0.000 claims description 72
- 230000005284 excitation Effects 0.000 claims description 63
- 239000007787 solid Substances 0.000 claims description 42
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000001816 cooling Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
- H01S3/08068—Holes; Stepped surface; Special cross-section
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Description
110 励起領域
200 励起レーザダイオード
300 励起放射反射ミラー
301 ミラー要素の外側部分
310 共振器折り畳みミラー
311 ミラー要素の中央部分
320 共振器端部ミラー
330 共振器アウトカップリングミラー
400 ヒートシンク
500 レーザ放射
510 励起放射
600 ミラー要素
Claims (8)
- レーザ共振器内の1又は複数の固体レーザ媒体と、
1又は複数の励起レーザダイオード及び励起放射反射ミラーと、
を有し、
前記レーザ共振器は、前記固体レーザ媒体の第1の側に配置された1又は複数の第1の共振器ミラーと、前記固体レーザ媒体の前記第1の側とは反対側の第2の側に配置された1又は複数の第2の共振器ミラーと、を有し、
前記第1及び第2の共振器ミラーは、前記レーザ共振器のレーザ放射を、前記レーザ媒体の各側を通じて、少なくとも2つの異なる直進路上にガイドするために設けられ、
前記励起レーザダイオードは、前記励起放射反射ミラーにおける励起放射の反射によって、前記固体レーザ媒体を光学的に励起するために設けられ、
前記励起放射反射ミラーは、前記第2の側に設けられるとともに、前記固体レーザ媒体に前記励起放射を直接反射し、
前記励起放射反射ミラー及び前記第2の共振器ミラーは、単一のミラー要素において、一体的に形成され、
前記固体レーザ媒体は、放熱器に並んでマウントされ、
前記装置は、少なくとも2つの前記固体レーザ媒体を有し、前記固体レーザ媒体の各々は、前記放熱器上の前記励起レーザダイオードの幾つかによって囲まれる、光励起固体レーザ装置。 - レーザ共振器内の1又は複数の固体レーザ媒体と、
1又は複数の励起レーザダイオード及び励起放射反射ミラーと、
を有し、
前記レーザ共振器は、前記固体レーザ媒体の第1の側に配置された1又は複数の第1の共振器ミラーと、前記固体レーザ媒体の前記第1の側とは反対側の第2の側に配置された1又は複数の第2の共振器ミラーと、を有し、
前記第1及び第2の共振器ミラーは、前記レーザ共振器のレーザ放射を、前記レーザ媒体の各側を通じて、少なくとも2つの異なる直進路上にガイドするために設けられ、
前記励起レーザダイオードは、前記励起放射反射ミラーにおける励起放射の反射によって、前記固体レーザ媒体を光学的に励起するために設けられ、
前記励起放射反射ミラーは、前記第2の側に設けられるとともに、前記固体レーザ媒体に前記励起放射を直接反射し、
前記励起放射反射ミラー及び前記第2の共振器ミラーは、単一のミラー要素において、一体的に形成され、
前記固体レーザ媒体は、放熱器に並んでマウントされ、
前記装置は、前記放熱器上の前記励起レーザダイオードの幾つかによって囲まれた前記固体レーザ媒体の1つを有する、光励起固体レーザ装置。 - レーザ共振器内の1又は複数の固体レーザ媒体と、
1又は複数の励起レーザダイオード及び励起放射反射ミラーと、
を有し、
前記レーザ共振器は、前記固体レーザ媒体の第1の側に配置された1又は複数の第1の共振器ミラーと、前記固体レーザ媒体の前記第1の側とは反対側の第2の側に配置された1又は複数の第2の共振器ミラーと、を有し、
前記第1及び第2の共振器ミラーは、前記レーザ共振器のレーザ放射を、前記レーザ媒体の各側を通じて、少なくとも2つの異なる直進路上にガイドするために設けられ、
前記励起レーザダイオードは、前記励起放射反射ミラーにおける励起放射の反射によって、前記固体レーザ媒体を光学的に励起するために設けられ、
前記励起放射反射ミラーは、前記第2の側に設けられるとともに、前記固体レーザ媒体に前記励起放射を直接反射し、
前記励起放射反射ミラー及び前記第2の共振器ミラーは、単一のミラー要素において、一体的に形成され、
前記固体レーザ媒体は、放熱器に並んでマウントされ、
前記励起レーザダイオードは、前記固体レーザ媒体の各々を囲むために、前記放熱器上に配置される、光励起固体レーザ装置。 - 前記固体レーザ媒体は、分布ブラッグ反射器上の量子井戸構造を有する、請求項1乃至3のいずれか1項に記載の装置。
- 前記ミラー要素は、前記励起レーザ媒体の各々のための1つの励起放射反射ミラーを有し、前記励起放射反射ミラーは、前記第2の共振器ミラーとアウトカップリングミラーを形成する前記第2の共振器ミラーの外側の1つとの間に設けられる、請求項1記載の装置。
- 前記ミラー要素は、前記第2の共振器ミラーを形成する中央領域と、前記励起放射を前記固体レーザ媒体に反射するとともに、前記励起放射反射ミラーを形成する外側領域と、を有し、前記第2の共振器ミラーは、アウトカップリングミラーを形成する、請求項2記載の装置。
- 前記ミラー要素の前記外側領域は、前記固体レーザ媒体において前記励起放射の強度分布を生成し、前記強度分布は、前記固体レーザ媒体を通じた前記レーザ放射の前記異なる経路の全てをカバーする、請求項6記載の装置。
- 前記励起レーザダイオードは、垂直キャビティ面発光レーザ、又は、電気励起垂直延在キャビティ面発光レーザである、請求項1乃至7のいずれか1項に記載の装置。
Applications Claiming Priority (3)
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US201261735682P | 2012-12-11 | 2012-12-11 | |
US61/735,682 | 2012-12-11 | ||
PCT/IB2013/059898 WO2014091326A1 (en) | 2012-12-11 | 2013-11-05 | Optically pumped solid state laser device with self aligning pump optics and enhanced gain |
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JP2016503957A JP2016503957A (ja) | 2016-02-08 |
JP6246228B2 true JP6246228B2 (ja) | 2017-12-13 |
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US (1) | US20150318656A1 (ja) |
EP (1) | EP2932568B1 (ja) |
JP (1) | JP6246228B2 (ja) |
CN (1) | CN104823341B (ja) |
BR (1) | BR112015013252A2 (ja) |
RU (1) | RU2654303C2 (ja) |
WO (1) | WO2014091326A1 (ja) |
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JP6862658B2 (ja) * | 2016-02-15 | 2021-04-21 | 株式会社リコー | 光増幅器、光増幅器の駆動方法及び光増幅方法 |
EP3419123A1 (en) * | 2017-06-22 | 2018-12-26 | Koninklijke Philips N.V. | Vertical cavity surface emitting laser (vcsel) with improved gain-switching behavior |
DE102018009384B4 (de) | 2018-11-30 | 2022-01-20 | Diehl Defence Gmbh & Co. Kg | Laser-Detektorsystem |
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US8102893B2 (en) * | 2007-06-14 | 2012-01-24 | Necsel Intellectual Property | Multiple emitter VECSEL |
RU2461932C2 (ru) * | 2010-12-14 | 2012-09-20 | Учреждение Российской академии наук Физический институт им. П.Н. Лебедева РАН (ФИАН) | Полупроводниковый дисковый лазер |
US8847142B2 (en) * | 2011-07-20 | 2014-09-30 | Hong Kong Applied Science and Technology Research Institute, Co. Ltd. | Method and device for concentrating, collimating, and directing light |
-
2013
- 2013-11-05 US US14/650,606 patent/US20150318656A1/en not_active Abandoned
- 2013-11-05 BR BR112015013252A patent/BR112015013252A2/pt not_active Application Discontinuation
- 2013-11-05 WO PCT/IB2013/059898 patent/WO2014091326A1/en active Application Filing
- 2013-11-05 RU RU2015128065A patent/RU2654303C2/ru not_active IP Right Cessation
- 2013-11-05 JP JP2015546114A patent/JP6246228B2/ja active Active
- 2013-11-05 EP EP13795301.4A patent/EP2932568B1/en active Active
- 2013-11-05 CN CN201380064804.1A patent/CN104823341B/zh active Active
Also Published As
Publication number | Publication date |
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CN104823341A (zh) | 2015-08-05 |
JP2016503957A (ja) | 2016-02-08 |
RU2654303C2 (ru) | 2018-05-17 |
EP2932568A1 (en) | 2015-10-21 |
WO2014091326A1 (en) | 2014-06-19 |
RU2015128065A (ru) | 2017-01-19 |
CN104823341B (zh) | 2018-09-21 |
EP2932568B1 (en) | 2021-10-27 |
BR112015013252A2 (pt) | 2017-07-11 |
US20150318656A1 (en) | 2015-11-05 |
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