WO2015190615A3 - Réseau de lasers à émission de surface, appareil laser à semi-conducteurs et appareil d'acquisition d'informations de sujet comprenant l'appareil laser à semi-conducteurs - Google Patents

Réseau de lasers à émission de surface, appareil laser à semi-conducteurs et appareil d'acquisition d'informations de sujet comprenant l'appareil laser à semi-conducteurs Download PDF

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Publication number
WO2015190615A3
WO2015190615A3 PCT/JP2015/067104 JP2015067104W WO2015190615A3 WO 2015190615 A3 WO2015190615 A3 WO 2015190615A3 JP 2015067104 W JP2015067104 W JP 2015067104W WO 2015190615 A3 WO2015190615 A3 WO 2015190615A3
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WO
WIPO (PCT)
Prior art keywords
solid
state laser
laser
laser apparatus
surface emitting
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PCT/JP2015/067104
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English (en)
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WO2015190615A2 (fr
Inventor
Tatsuro Uchida
Mamoru Uchida
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Canon Kabushiki Kaisha
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Publication of WO2015190615A2 publication Critical patent/WO2015190615A2/fr
Publication of WO2015190615A3 publication Critical patent/WO2015190615A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/042—Arrangements for thermal management for solid state lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08072—Thermal lensing or thermally induced birefringence; Compensation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0619—Coatings, e.g. AR, HR, passivation layer
    • H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/09408—Pump redundancy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
    • H01S3/1623—Solid materials characterised by an active (lasing) ion transition metal chromium, e.g. Alexandrite
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Lasers (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention porte sur un appareil laser à semi-conducteurs qui peut uniformiser la répartition de chaleur dans un milieu laser pour supprimer la génération d'un effet de lentille thermique dans le milieu laser, ce qui permet de supprimer la dégradation de la qualité de faisceau de la lumière laser de sortie, sur un appareil d'acquisition d'informations de sujet comprenant l'appareil laser à semi-conducteurs et sur un réseau de lasers à émission de surface qui peut supprimer la génération d'un effet de lentille thermique pour supprimer la dégradation de la qualité de faisceau de la lumière laser de sortie d'un appareil laser à semi-conducteurs. L'appareil laser à semi-conducteurs comprend : un résonateur comprenant un coupleur de sortie; une partie de support comprenant un support laser en forme de plaque agencé dans le résonateur; et une partie de source d'excitation lumineuse comprenant un réseau de lasers à émission de surface. Dans l'appareil laser à semi-conducteurs, une partie électroluminescente de la partie de source d'excitation lumineuse est agencée de sorte à être en contact avec la partie de support.
PCT/JP2015/067104 2014-06-11 2015-06-09 Réseau de lasers à émission de surface, appareil laser à semi-conducteurs et appareil d'acquisition d'informations de sujet comprenant l'appareil laser à semi-conducteurs WO2015190615A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014120571 2014-06-11
JP2014-120571 2014-06-11
JP2015-106465 2015-05-26
JP2015106465A JP2016015476A (ja) 2014-06-11 2015-05-26 面発光レーザアレイ、固体レーザ装置、およびそれを備えた被検体情報取得装置

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Publication Number Publication Date
WO2015190615A2 WO2015190615A2 (fr) 2015-12-17
WO2015190615A3 true WO2015190615A3 (fr) 2016-03-24

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PCT/JP2015/067104 WO2015190615A2 (fr) 2014-06-11 2015-06-09 Réseau de lasers à émission de surface, appareil laser à semi-conducteurs et appareil d'acquisition d'informations de sujet comprenant l'appareil laser à semi-conducteurs

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JP (1) JP2016015476A (fr)
WO (1) WO2015190615A2 (fr)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4847851A (en) * 1988-05-19 1989-07-11 University Of South Florida Butt-coupled single transverse mode diode pumped laser
WO1992003862A1 (fr) * 1990-08-22 1992-03-05 Massachusetts Institute Of Technology Groupement de lasers a micropuce
US5256164A (en) * 1988-02-02 1993-10-26 Massachusetts Institute Of Technology Method of fabricating a microchip laser
US5982802A (en) * 1996-07-26 1999-11-09 Commissariat A L'energie Atomique Solid microlaser with optical pumping by vertical cavity semiconductor laser
US20070280305A1 (en) * 2006-06-05 2007-12-06 Oved Zucker Q-switched cavity dumped laser array
EP1875566A2 (fr) * 2005-03-30 2008-01-09 Novalux, Inc. Lasers en cavite etendue a emission verticale par la surface stabilises en frequence
US20120128015A1 (en) * 2010-11-19 2012-05-24 Trilumina Corporation Optical Pumping of Solid-State Laser Material Using Addressable Laser Array
US20130255613A1 (en) * 2010-10-14 2013-10-03 Rene Hartke Laser ignition device for an internal combustion engine and operating method therefor
US20130276738A1 (en) * 2010-10-28 2013-10-24 Rene Hartke laser spark plug and method for operating same
WO2014018684A1 (fr) * 2012-07-24 2014-01-30 Joseph John R Réseau multifaisceau d'éléments vcsel à émission par le haut

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5553088A (en) 1993-07-02 1996-09-03 Deutsche Forschungsanstalt Fuer Luft- Und Raumfahrt E.V. Laser amplifying system

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256164A (en) * 1988-02-02 1993-10-26 Massachusetts Institute Of Technology Method of fabricating a microchip laser
US4847851A (en) * 1988-05-19 1989-07-11 University Of South Florida Butt-coupled single transverse mode diode pumped laser
WO1992003862A1 (fr) * 1990-08-22 1992-03-05 Massachusetts Institute Of Technology Groupement de lasers a micropuce
US5982802A (en) * 1996-07-26 1999-11-09 Commissariat A L'energie Atomique Solid microlaser with optical pumping by vertical cavity semiconductor laser
EP1875566A2 (fr) * 2005-03-30 2008-01-09 Novalux, Inc. Lasers en cavite etendue a emission verticale par la surface stabilises en frequence
US20070280305A1 (en) * 2006-06-05 2007-12-06 Oved Zucker Q-switched cavity dumped laser array
US20130255613A1 (en) * 2010-10-14 2013-10-03 Rene Hartke Laser ignition device for an internal combustion engine and operating method therefor
US20130276738A1 (en) * 2010-10-28 2013-10-24 Rene Hartke laser spark plug and method for operating same
US20120128015A1 (en) * 2010-11-19 2012-05-24 Trilumina Corporation Optical Pumping of Solid-State Laser Material Using Addressable Laser Array
WO2014018684A1 (fr) * 2012-07-24 2014-01-30 Joseph John R Réseau multifaisceau d'éléments vcsel à émission par le haut

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JP2016015476A (ja) 2016-01-28

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