WO2015188412A1 - 光阻剥离方法及光阻剥离装置 - Google Patents

光阻剥离方法及光阻剥离装置 Download PDF

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Publication number
WO2015188412A1
WO2015188412A1 PCT/CN2014/081432 CN2014081432W WO2015188412A1 WO 2015188412 A1 WO2015188412 A1 WO 2015188412A1 CN 2014081432 W CN2014081432 W CN 2014081432W WO 2015188412 A1 WO2015188412 A1 WO 2015188412A1
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Prior art keywords
photoresist
stripping
photoresist stripping
substrate
tank
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PCT/CN2014/081432
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English (en)
French (fr)
Inventor
张旭东
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深圳市华星光电技术有限公司
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Priority to US14/381,912 priority Critical patent/US20160238943A1/en
Publication of WO2015188412A1 publication Critical patent/WO2015188412A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the present invention relates to the field of flat panel display processing, and more particularly to a photoresist stripping method and a photoresist stripping device. Background technique
  • the display has evolved from the early Cathode Ray Tude (CRT) display to the current Liquid Crystal Display (LCD) and organic light emitting display (OLED).
  • CTR Cathode Ray Tude
  • LCD Liquid Crystal Display
  • OLED organic light emitting display
  • the liquid crystal display has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • Most of the liquid crystal displays on the market are backlight type liquid crystal displays, including liquid crystal display panels and backlight modules (the backlight module ⁇ liquid crystal panel production mainly includes: "front stage Array process”, “middle stage Cell process”, and " The rear module is assembled with three processes.
  • the front Array process is to form a pre-designed ITO (Indium tin oxide) electrode pattern on a glass substrate;
  • the middle Cell process is to use a TFT (Thin Film Transistor) substrate. It is bonded to a CF (color filter) substrate, and a liquid crystal material is injected between the two to form a liquid crystal substrate.
  • ITO Indium tin oxide
  • TFT Thin Film Transistor
  • the assembly of the rear module is to integrate the driving IC of the liquid crystal substrate with the printed circuit board.
  • the process mainly includes four steps of "film formation”, “lithography”, “etching” and “photoresist layer peeling".
  • the photoresist layer stripping step generally removes the photoresist layer (photoresist) remaining after the etching is completed using a special stripping device and a stripping solution.
  • the organic electroluminescent display has the advantages of self-illumination, high brightness, high contrast, wide viewing angle, low driving voltage and high-speed response, and is a high-definition flat panel display in the current generation of displays.
  • a common OLED structure is: a substrate, an ITO transparent anode placed on the substrate, a hole injection layer placed on the transparent anode of the ITO, and a hole transport layer disposed on the hole injection layer (the HTL is placed on the hole transport layer)
  • light Barrier peeling is the last step in the yellow lithography process of semiconductors or displays. It is to remove the photoresist of the protection pattern in the etching process to avoid the residual photoresist from contaminating the next yellow lithography process to obtain a clean circuit pattern substrate. If there is photoresist left on the surface of the display panel, especially in the ITO anode light-emitting area, the evaporation of the subsequent organic light-emitting layer and the cathode material is blocked, so that the display panel produces dark spots, and the P i display quality and process qualification rate.
  • the thickness of the organic electron luminescent film evaporated by the subsequent process is very thin, the thickness is uneven due to the residual photoresist, and the electric field distribution is uneven, and even the component is short-circuited. In turn, the life of the display is affected. It can be seen that the peeling effect of the photoresist stripping step plays a very important role in the process of the OLED.
  • one problem that affects the peeling effect of the photoresist peeling step is that when the photoresist stripping solution is in contact with water, a strong alkali substance is formed, which may cause The corrosion of the aluminum film or IGZO (indium gallium zinc oxide) causes the produced liquid crystal display and the organic electroluminescent display to produce a visible oblique stripe water Mum after lighting, which affects the quality of the flat panel display.
  • IGZO indium gallium zinc oxide
  • Another object of the present invention is to provide a photoresist stripping device which is provided with a plurality of air knives and a chemical liquid splash protection cover by adding a buffer zone, thereby preventing the stripping of the photoresist. It can minimize the occurrence of aluminum corrosion and IGZO corrosion and improve the quality of flat panel displays.
  • the present invention provides a photoresist stripping method comprising the following steps: Step 1. Providing a substrate on which a photoresist layer is to be removed;
  • Step 2 irradiating the photoresist layer to be removed with ultraviolet light
  • Step 3 peeling off the photoresist on the surface of the substrate with a photoresist stripping solution in the stripping groove;
  • Step 4 after the photoresist stripping is completed, the photoresist stripping liquid on the substrate is removed by a wind knife in the buffer zone;
  • Step 5 After the air knife is blown, the photoresist stripping liquid remaining on the substrate is washed in the water washing tank.
  • the substrate is transported for cleaning at a speed of 10000 mm/min or more from the peeling tank to the washing tank, and in the course of transportation, the step 4 is performed.
  • the step 4 uses a plurality of air knives; the step 5 uses two washing tanks to perform two cleanings.
  • a chemical liquid splash protection cover is disposed in the buffer of step 4 to prevent the photoresist stripping liquid of the step 3 stripping chamber from invading the water washing tank of step 5.
  • the discharge pressure of the water washing tank is set to be smaller than the discharge pressure of the stripping tank to prevent the photoresist stripping liquid from volatilizing to the water washing tank.
  • the water washing flow rate of the washing tank is greater than 85L/min, and the water jet flow rate is greater than 40L/min o
  • the substrate is provided with an aluminum layer or an IGZO layer for a liquid crystal display device or an OLED 0
  • the invention also provides a photoresist stripping device for the above-mentioned photoresist stripping method, comprising an inlet region arranged in sequence, an ultraviolet irradiation unit, a first buffer zone, a stripping tank, a second buffer zone, a first water washing tank and a first
  • the second water washing tank further includes a transport unit for transporting the substrate, passing through the ultraviolet irradiation unit, the first buffer zone, the stripping tank, the second buffer zone, and the first water washing tank from the inlet zone, and finally transporting to the second water washing tank.
  • the second buffer is provided with a chemical liquid splash protection cover and a plurality of air knives.
  • the invention also provides a photoresist stripping device for the above-mentioned photoresist stripping method, comprising an inlet region arranged in sequence, an ultraviolet irradiation unit, a first buffer zone, a stripping tank, a second buffer zone, a first water washing tank and a first
  • the second water washing tank further includes a transport unit for transporting the substrate, passing through the ultraviolet irradiation unit, the first buffer zone, the stripping tank, the second buffer zone, and the first water washing tank from the inlet zone, and finally transporting to the second water washing tank.
  • the second buffer is provided with a chemical liquid splash protection cover and a plurality of air knives.
  • the beneficial effects of the present invention the photoresist stripping method and the photoresist stripping device of the present invention, wherein a plurality of air knives are arranged in the second buffer zone by providing a second buffer zone between the stripping groove and the first 7-washing tank, To remove the photoresist stripping liquid remaining on the surface of the substrate, to minimize the amount of photoresist stripping liquid in contact with water in the washing tank; and to provide a chemical liquid splash protection cover in the second buffer zone to prevent the stripping groove
  • the photoresist stripping solution invades the first water washing tank; at the same time, the substrate can be quickly separated from the alkaline environment by increasing the conveying speed of the transport unit to the substrate; and the exhaust pressure of the water washing tank is adjusted to be smaller than the exhaust pressure of the stripping tank by adjusting the exhaust pressure.
  • the photoresist stripping device has a simple structure, improves the quality of the flat panel display produced, and has a production cost.
  • FIG. 1 is a flow chart of a photoresist stripping method of the present invention
  • FIG. 2 is a schematic view of a photoresist stripping apparatus of the present invention. detailed description
  • the present invention provides a photoresist stripping method, comprising the following steps: Step 1. Providing a substrate on which a photoresist layer is to be removed;
  • Step 2 irradiating the photoresist layer to be removed with ultraviolet light
  • Step 3 peeling off the photoresist on the surface of the substrate with a photoresist stripping solution in the stripping groove;
  • Step 4 After the photoresist stripping is completed, the photoresist stripping liquid on the substrate is removed by a wind knife in the buffer zone;
  • Step 5 After the air knife is blown, the photoresist stripping liquid remaining on the substrate is washed in the water washing tank.
  • the substrate is provided with an aluminum layer or an IGZO layer for a liquid crystal display device or an OLED 0
  • the substrate is transported and cleaned from the stripping tank to the washing tank at a speed of 10000 mm/min or more to quickly remove the substrate from the alkaline environment, thereby reducing the occurrence of aluminum corrosion or IGZO corrosion, and transporting In the process, proceed to step 4.
  • the step 4 adopts several air knives, and the air knives have two upper and lower metal knives. After passing through the ultra-pure air, a uniform air blow can be generated, and the liquid surface of the substrate is removed, and a plurality of air knives are set. The photoresist stripping solution in contact with water can be minimized to reduce the formation of strong alkali substances.
  • a chemical liquid splash protection cover is disposed in the buffer of step 4 to prevent the photoresist stripping liquid of the step 3 stripping chamber from invading the water washing tank of step 5.
  • the step 5 is performed by two washing tanks for two times to completely remove the photoresist stripping liquid remaining on the substrate.
  • the cleaning solution in the water washing tank is deionized water.
  • the exhaust pressure of the water washing tank is set to be smaller than the exhaust pressure of the stripping tank to prevent the photoresist stripping liquid from volatilizing to the water washing tank.
  • the water washing flow rate of the washing tank is controlled to be greater than 85 L/min, and the 7_knife flow rate is greater than 40 L/min to increase the cleaning speed and reduce the contact time between the substrate and the alkaline substance, thereby reducing the occurrence of aluminum corrosion or IGZO corrosion corrosion.
  • the present invention provides a photoresist stripping apparatus for the above-mentioned photoresist stripping method, which comprises an inlet region 10 disposed in sequence, an ultraviolet irradiation unit 20, a first buffer zone 30, and a stripping groove. 40, the second buffer zone 50, the first 7 washing tank 60 and the second water washing tank 70, further comprising a transport unit 80 for transporting a substrate (not shown), passing through the ultraviolet irradiation unit 20 from the inlet area 10, The first buffer zone 30, the stripping tank 40, the second buffer zone 50, and the first 7 tanks 60 are finally transported to the second water washing tank 70.
  • the second buffer zone 50 is provided with a chemical liquid splash protection cover 52 and a plurality of air knife 54 0.
  • the chemical liquid splash protection cover 52 can prevent the photoresist stripping liquid in the stripping groove 40 from invading the first and the first Two water washing tanks 60, 70.
  • a washing solution is sprayed against the substrate, and the composition of the washing solution is deionized water.
  • the photoresist stripping method and the photoresist stripping device of the present invention are exposed by ultraviolet light.
  • the photoresist layer is stripped by the photoresist stripping solution and exposed by the cleaning solution.
  • Residual photoresist stripping liquid remaining on the surface of the substrate to achieve the purpose of removing the photoresist; by setting a second buffer between the stripping tank and the first washing tank, and setting a plurality of air knives in the second buffer to move In addition to the photoresist stripping solution remaining on the surface of the substrate, the amount of resist stripping liquid in contact with water in the washing tank is minimized; and a chemical spray splash guard is also disposed in the second buffer to prevent the stripping light from being removed.
  • the resisting stripping liquid invades the first water washing tank; at the same time, the substrate can be quickly separated from the alkaline environment by increasing the conveying speed of the conveying unit to the substrate; by adjusting the exhaust pressure, the exhaust pressure of the water washing tank is smaller than the exhaust pressure of the stripping tank, Preventing the photoresist stripping liquid from volatilizing into the water washing tank to form a strong alkali substance; reducing the occurrence of aluminum corrosion and IGZO corrosion during photoresist stripping by the above-mentioned technical means, improving the quality of the flat panel display, and the step of the photoresist stripping method is simple and easy to operate.
  • the photoresist stripping device has a simple structure, improves the quality of the flat panel display produced, and has a production cost.

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  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
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  • General Physics & Mathematics (AREA)
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Abstract

一种光阻剥离方法及光阻剥离装置，所述光阻剥离方法包括：步骤1、提供待去除光阻层的基板；步骤2、采用紫外光照射待去除的光阻层；步骤3、在剥离槽中用光阻剥离液剥离该基板表面上的光阻；步骤4、完成光阻剥离之后，在缓冲区用风刀（54）移除基板上的光阻剥离液；步骤5、风刀（54）吹过之后，在水洗槽（60、70）清洗基板上残留的光阻剥离液。该方法能最大限度的减少光阻剥离过程中铝腐蚀及IGZO腐蚀的发生提高平板显示器的质量。

Description

光阻剥离方法及光阻剥离装置 技术领域
本发明涉及平板显示器加工领域，尤其涉及一种光阻剥离方法及光阻 剥离装置。 背景技术
随着科技蓬勃发展，显示器从早期的阴极射线管 ( Cathode Ray Tude, CRT )显示器发展到现在的液晶显示器 ( Liquid Crystal Display, LCD )与有 机电激发光显示器 ( organic light emitting display, OLED \
液晶显示器具有机身薄、 省电、 无辐射等众多优点，得到了广泛的应 用。 现有巿场上的液晶显示器大部分为背光型液晶显示器，其包括液晶显 示面板及背光模组 ( backlight module \ 液晶面板的生产主要包括： "前段 Array制程"、 "中段 Cell制程"、 及 "后段模组组装"三个工艺。 其中，前 段 Array制程是在玻璃基板上形成前期设计好的 ITO(Indium tin oxide ,铟 锡氧化物)电极图形；中段 Cell制程是将 TFT (薄膜晶体管 )基板与 CF (彩 色滤光片）基板贴合，并在两者之间注入液晶材料，形成液晶基板；后段 模组组装是将液晶基板的驱动 IC压合与印刷电路板的整合。 M Array制 程主要包括 "成膜"、 "光刻"、 "蚀刻" 及 "光阻层剥离" 四大步骤。 其中， 光阻层剥离步骤一般是使用专门的剥离设备及剥离液对蚀刻完毕后剩下的 光阻层 (光刻胶）进行去除。
有机电激发光显示器具有自发光、 高亮度、 高对比、 宽视角、 驱动电 压低与高速响应等优点，为目前新世代显示器中被寄予厚望的平板显示器。 常见的 OLED结构为：基板、 置于基板上的 ITO透明阳极、 置于 ITO透明 阳极上的空穴注入层、 置于空穴注入层上的空穴传输层（ HTL 置于空穴 传输层上的发光层（ EML )、 置于发光层上的电子传输层 (ETL)、 置于电子 传输层上的电子注入层 ( EIL )以及置于电子注入层上的阴极。在 OLED的 制程中，光阻剥离是在半导体或显示器的黄光微影工艺的最后一个步骤， 就是将上道蚀刻步骤中保护图案的光阻去除，避免光阻残留污染下一道黄 光微影工艺，以获得干净的有线路图案的基板。 如果有光阻残留于显示面 板表面，特别是在 ITO阳极发光区，会阻挡后续有机发光层与阴极材料的 蒸镀，使得显示面板产生暗点， P i氏显示品质与工艺合格率。 另外，由于 后续工艺所蒸镀的有机电子发光膜厚度非常薄，由于光阻残留造成的厚度 不均，易造成电场分布不均，甚至组件短路，进而影响显示器的寿命。 由 此可见，光阻剥离步骤的剥离效果对 OLED的制程起着非常重要的影响。 当用于液晶显示器或 OLED的基板设有铝层或 IGZO层时，影响其光 阻剥离步骤的剥离效果的一个问题是：在光阻剥离液与水接触时反应生成 强碱物质，会造成对铝膜或 IGZO (氧化铟镓锌 )的腐蚀，使得生产的液晶 显示器与有机电激发光显示器在点亮后产生肉眼可见斜条状水纹 Mum ,影 响平板显示器的质量。 发明内容
本发明的目的在于提供一种光阻剥离方法，可以减少铝腐蚀及 IGZO 腐蚀状况的发生，改善平板显示器生产中的缺陷，提高平板显示器的质量。
本发明的另一目的在于提供一种光阻剥离装置，通过增设一缓冲区， 并在该增设的缓冲区中设置数个风刀和一防药液喷溅保护罩，从而在光阻 剥离时可以最大限度的减少铝腐蚀及 IGZO腐蚀状况的发生 ,提高平板显示 器的质量。
为实现上述目的，本发明提供一种光阻剥离方法，包括以下步骤： 步骤 1、 提供待去除光阻层的基板；
步骤 2、 采用紫外光照射待去除的光阻层；
步骤 3、 在剥离槽中用光阻剥离液剥离该基板表面上的光阻；
步骤 4、完成光阻剥离之后 ,在缓冲区用风刀移除基板上的光阻剥离液； 步骤 5、 风刀吹过之后，在水洗槽清洗基板上残留的光阻剥离液。
所述光阻剥离液包括 30wt%-70wt%单乙醇胺与 70wt%-30wt%=甲基亚 砜。
在完成光阻剥离之后，从剥离槽到水洗槽之间以 10000mm/min以上的 速度将基板运送去清洗，且在运送过程中，进行步骤 4。
所述步骤 4采用数个风刀；所述步骤 5采用两个水洗槽进行两次清洗。 在步骤 4的缓冲区设置一防药液喷溅保护罩以防止步骤 3剥离槽的光 阻剥离液侵入步骤 5的水洗槽。
设置水洗槽的排气压力小于剥离槽的排气压力以防止光阻剥离液挥发 至水洗槽。
所述水洗槽的水洗流量大于 85L/min ,水刀流量大于 40L/mino
所述基板设有铝层或 IGZO层，用于液晶显示装置或 OLED0
本发明还提供一种用于上述光阻剥离方法的光阻剥离装置，包括依次 放置设置的入口区、 紫外线照射单元、 第一缓冲区、 剥离槽、 第二缓冲区、 第一水洗槽与第二水洗槽，还包括一传输单元，其用于运送基板，从入口 区依次经过紫外线照射单元、 第一缓冲区、 剥离槽、 第二缓冲区、 及第一 水洗槽，最后运送到第二水洗槽。 所述第二缓冲区设置一防药液喷溅保护罩及数个风刀。
本发明还提供一种用于上述光阻剥离方法的光阻剥离装置，包括依次 放置设置的入口区、 紫外线照射单元、 第一缓冲区、 剥离槽、 第二缓冲区、 第一水洗槽与第二水洗槽，还包括一传输单元，其用于运送基板，从入口 区依次经过紫外线照射单元、 第一缓冲区、 剥离槽、 第二缓冲区、 及第一 水洗槽，最后运送到第二水洗槽；
所述第二缓冲区设置一防药液喷溅保护罩及数个风刀。
本发明的有益效果：本发明的光阻剥离方法及光阻剥离装置，通过在 剥离槽与第一 7-洗槽之间设置第二缓冲区，在第二缓冲区中设置数个风刀， 以移除基板表面残留的光阻剥离液，最大限度的减少在水洗槽中与水接触 的光阻剥离液量；在第二缓冲区中还设置一防药液喷溅保护罩，防止剥离 槽的光阻剥离液侵入第一水洗槽；同时通过提高传输单元对基板的传送速 度，可以使基板快速脱离碱性环境；通过调节排气压力使水洗槽的排气压 力小于剥离槽的排气压力，可以防止光阻剥离液挥发至水洗槽导致生成强 碱物质；通过上述技术手段减少光阻剥离时铝腐蚀及 IGZO腐蚀的发生，提 高平板显示器的质量，同时该光阻剥离方法工序简单，易于操作。 所述光 阻剥离装置结构简单，提高所生产的平板显示器的质量， P i氏了生产成本。 为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本 发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发 明加以限制。 附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明 的技术方案及其它有益效果显而易见。
附图中，
图 1为本发明光阻剥离方法的流程图；
图 2为本发明光阻剥离装置的示意图。 具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明 的优选实施例及其附图进行详细描述。
请参阅图 1 ,本发明提供一种光阻剥离方法，包括以下步骤： 步骤 1、 提供待去除光阻层的基板；
步骤 2、 采用紫外光照射待去除的光阻层；
步骤 3、 在剥离槽中用光阻剥离液剥离该基板表面上的光阻； 步骤 4、完成光阻剥离之后 ,在缓冲区用风刀移除基板上的光阻剥离液； 步骤 5、 风刀吹过之后，在水洗槽清洗基板上残留的光阻剥离液。
所述基板设有铝层或 IGZO层，用于液晶显示装置或 OLED0
所述光阻剥离液包括 30wt%-70wt%单乙醇胺与 70wt%-30wt%=甲基亚 砜。 由于单乙醇胺与二甲基亚砜均属于有机物质，当遇到大量水时将会导 致其中的氢氧根脱落，溶于水中，生成强碱类物质，对 IGZO或铝造成腐蚀。
在完成光阻剥离之后，从剥离槽到水洗槽之间以 10000mm/min以上的 速度将基板运送去清洗，以使基板快速脱离碱性环境，减少铝腐蚀或 IGZO 腐蚀状况的发生，且在运送过程中，进行步骤 4。
所述步骤 4采用数个风刀，所述风刀具有上下两个金属刀面，通入超 纯空气后可产生均匀的出风，对基板表面进行液体去除的动作，通过设置 数个风刀可使与水接触的光阻剥离液最大限度的减少，从而减少强碱物质 的生成。
在步骤 4的缓冲区设置一防药液喷溅保护罩以防止步骤 3剥离槽的光 阻剥离液侵入步骤 5的水洗槽。
所述步骤 5采用两个水洗槽进行两次清洗，以彻底去除基板上残留的 光阻剥离液。 所述水洗槽中的清洗溶液为去离子水。 设置水洗槽的排气压力小于剥离槽的排气压力，以防止光阻剥离液挥 发至水洗槽。
控制所述水洗槽的水洗流量大于 85L/min , 7_刀流量大于 40L/min ,以 提高清洗速度，减少基板与碱性物质的接触时间，进而减少铝腐蚀或 IGZO 腐蚀腐蚀的发生。
请参阅图 2 ,本发明提供一种用于上述光阻剥离方法的光阻剥离装置， 该光阻剥离装置包括依次放置设置的入口区 10、 紫外线照射单元 20、 第一 缓冲区 30、 剥离槽 40、 第二缓冲区 50、 第一 7 洗槽 60与第二水洗槽 70 , 还包括一传输单元 80 ,其用于运送基板 (未图示），从入口区 10依次经过 紫外线照射单元 20、 第一缓冲区 30、 剥离槽 40、 第二缓冲区 50、 及第一 7 洗槽 60 ,最后运送到第二水洗槽 70。
所述第二缓冲区 50设置一防药液喷溅保护罩 52及数个风刀 540 所述 防药液喷溅保护罩 52可以防止剥离槽 40中的光阻剥离液侵入第一与第二 水洗槽 60、 70。
在第一 7 洗槽 60与第二水洗槽 70里，对着基板喷洒清洗溶液，所述 清洗溶液的成分是去离子水。
综上所述，本发明的光阻剥离方法及光阻剥离装置，利用紫外光曝光 光阻层，再利用光阻剥离液对曝光后的光阻进行剥离，并利用清洗溶液移
Ρ余基板表面残留的光阻剥离液，以达到去除光阻的目的；通过在剥离槽与 第一水洗槽之间设置第二缓冲区，在第二缓冲区中设置数个风刀，以移除 基板表面残留的光阻剥离液，最大限度的减少在水洗槽中与水接触的光阻 剥离液量；在第二缓冲区中还设置一防药液喷溅保护罩，防止剥离槽的光 阻剥离液侵入第一水洗槽；同时通过提高传输单元对基板的传送速度，可 以使基板快速脱离碱性环境；通过调节排气压力使水洗槽的排气压力小于 剥离槽的排气压力，可以防止光阻剥离液挥发至水洗槽导致生成强碱物质； 通过上述技术手段减少光阻剥离时铝腐蚀及 IGZO腐蚀的发生 ,提高平板显 示器的质量，同时该光阻剥离方法工序简单，易于操作。 所述光阻剥离装 置结构简单，提高所生产的平板显示器的质量， P i氏了生产成本。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形 都应属于本发明权利要求的保护范围。

Claims

杈 利 要 求
1、 一种光阻剥离方法，包括以下步骤：
步骤 1、 提供待去除光阻层的基板；
步骤 2、 采用紫外光照射待去除的光阻层；
步骤 3、 在剥离槽中用光阻剥离液剥离该基板表面上的光阻；
步骤 4、完成光阻剥离之后 ,在缓冲区用风刀移除基板上的光阻剥离液； 步骤 5、 风刀吹过之后，在水洗槽清洗基板上残留的光阻剥离液。
2、 如权利要求 1 所述的光阻剥离方法，其中，所述光阻剥离液包括 30wt%-70wt%单乙醇胺与 70wt%-30wt%二甲基亚砜。
3、 如权利要求 1所述的光阻剥离方法，其中，在完成光阻剥离之后， 从剥离槽到水洗槽之间以 lOOOOmm/min以上的速度将基板运送去清洗，且 在运送过程中，进行步骤 4。
4、 如权利要求 1所述的光阻剥离方法，其中，所述步骤 4采用数个风 刀；所述步骤 5采用两个水洗槽进行两次清洗。
5、 如权利要求 1所述的光阻剥离方法，其中，在步骤 4的缓冲区设置 一防药液喷溅保护罩以防止步骤 3剥离槽的光阻剥离液侵入步骤 5的水洗
6、 如权利要求 1所述的光阻剥离方法，其中， 7 洗槽的排气压力小于 剥离槽的排气压力以防止光阻剥离液挥发至水洗槽。
7、 如权利要求 1所述的光阻剥离方法，其中，所述水洗槽的水洗流量 大于 85L/min ,水刀流量大于 40L/mino
8、如权利要求 1所述的光阻剥离方法其中 ,所述基板设有铝层或 IGZO 层，用于液晶显示装置或 OLED。
9、 一种用于权利要求 1所述的光阻剥离方法的光阻剥离装置，包括依 次放置设置的入口区、 紫外线照射单元、 第一缓冲区、 剥离槽、 第二缓冲 区、 第一水洗槽与第二水洗槽，还包括一传输单元，其用于运送基板，从 入口区依次经过紫外线照射单元、 第一缓冲区、 剥离槽、 第二缓冲区、 及 第一水洗槽，最后运送到第二水洗槽。
10、 如权利要求 9所述的光阻剥离装置，其中，所述第二缓冲区设置 —防药液喷溅保护罩及数个风刀。
11、 一种用于权利要求 1所述的光阻剥离方法的光阻剥离装置，包括 依次放置设置的入口区、 紫外线照射单元、 第一缓冲区、 剥离槽、 第二缓 冲区、 第一水洗槽与第二水洗槽，还包括一传输单元，其用于运送基板， 从入口区依次经过紫外线照射单元、 第一缓冲区、 剥离槽、 第二缓冲区、 及第一 7 洗槽，最后运送到第二水洗槽； 其中，所述第二缓冲区设置一防药液喷溅保护罩及数个风刀。
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