WO2015174409A1 - 磁気センサ装置 - Google Patents
磁気センサ装置 Download PDFInfo
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- WO2015174409A1 WO2015174409A1 PCT/JP2015/063616 JP2015063616W WO2015174409A1 WO 2015174409 A1 WO2015174409 A1 WO 2015174409A1 JP 2015063616 W JP2015063616 W JP 2015063616W WO 2015174409 A1 WO2015174409 A1 WO 2015174409A1
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- magnet
- magnetic
- anisotropic magnetoresistive
- sensor device
- longitudinal direction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
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- G—PHYSICS
- G07—CHECKING-DEVICES
- G07D—HANDLING OF COINS OR VALUABLE PAPERS, e.g. TESTING, SORTING BY DENOMINATIONS, COUNTING, DISPENSING, CHANGING OR DEPOSITING
- G07D7/00—Testing specially adapted to determine the identity or genuineness of valuable papers or for segregating those which are unacceptable, e.g. banknotes that are alien to a currency
- G07D7/04—Testing magnetic properties of the materials thereof, e.g. by detection of magnetic imprint
Definitions
- the present invention relates to a magnetic sensor device that detects a minute magnetic pattern formed on a paper-like medium such as a banknote.
- the magnetic sensor device is a sensor device using a plurality of magnetoresistive elements having a characteristic that the resistance value changes with respect to the magnetic flux density.
- a magnetic sensor device that simultaneously detects multi-channel magnetic patterns contained in a paper-like medium such as banknotes, the amount of magnetization of these magnetic patterns is very small.
- paper sheets such as banknotes The medium needs to pass through a strong magnetic field environment.
- the detection direction of the anisotropic magnetoresistive element is the short side direction of the element, and the magnetic flux is read by applying a bias magnetic flux density with the highest sensitivity in the detection direction.
- Japanese Patent Laying-Open No. 2012-255770 discloses a magnetic sensor device using an anisotropic magnetoresistive element.
- the magnetic sensor device described in Patent Document 1 has a structure in which no magnetic flux is ideally applied in the non-magnetic sensitive direction (longitudinal direction) of the anisotropic magnetoresistive element, and therefore in the detection direction (short side direction).
- the magnetic vector is directed in the same direction only, but the actual product has a finite magnet length, so that the magnetic flux is applied outward from the center of the magnet with respect to the longitudinal direction of the magnet.
- the magnetic flux density is also applied in the non-magnetic direction (longitudinal direction) of the anisotropic magnetoresistive element.
- the cause of the application of the magnetic flux density in the non-magnetic direction also occurs due to variations in the magnetic force of the magnet, variations in the outer shape of the magnet / magnetic body, assembly variations, and the like.
- the anisotropic magnetoresistive element has a magnetic vector inclined in the direction of the magnetic flux density applied in the non-magnetic direction (longitudinal direction).
- Direction is changed (inverted), and when reading a magnetic pattern inclined in the plane direction, the orientation and anisotropy of the non-magnetic direction (longitudinal direction) of the magnetic vector generating the magnetic pattern Due to the relationship of the direction of the magnetic vector of the magnetoresistive effect element in the non-magnetic sensing direction (longitudinal direction), there is a problem that the magnitude of the output is generated depending on where the anisotropic magnetoresistive effect element is mounted.
- the present invention has been made to solve the above-described problems, and the direction of the bias magnetic flux density applied in the non-magnetic direction (longitudinal direction) of the anisotropic magnetoresistive element is made the same direction. Therefore, a magnetic sensor device that obtains a stable output from each of the anisotropic magnetoresistive elements mounted side by side in the line direction without being affected by the shape of the magnetic pattern is obtained. .
- the magnetic sensor device has magnetic poles that are different from each other in a direction perpendicular to the conveyance direction of the object to be detected having a magnetic body, and that extends in the longitudinal direction with the direction orthogonal to the conveyance direction as the longitudinal direction.
- an anisotropic magnetoresistive element arranged in a line in the longitudinal direction on the magnetic pole on the detected object side of the magnet, and the magnet has an end in the longitudinal direction in the longitudinal direction.
- the length in the direction perpendicular to the transport direction is longer than the center portion.
- the anisotropic magnetoresistive effect mounted side by side in the line direction Since it is possible to forcibly apply a bias magnetic flux density in the same direction in the non-magnetic direction (longitudinal direction) of the element, a plurality of anisotropic magnetoresistive elements are also applied to a magnetic pattern inclined in the plane direction. Thus, the same level of output can be obtained stably.
- FIG. 1 It is a side view of the longitudinal direction of the magnetic sensor apparatus in Embodiment 1 of this invention. It is the top view seen from the upper surface of the magnetic sensor apparatus in Embodiment 1 of this invention. It is a figure of magnetic force line distribution when the magnetic sensor apparatus in Embodiment 1 of this invention is seen from XZ plane. It is a magnetic force vector diagram explaining the detection principle of the magnetic sensor device. It is a figure of magnetic force line distribution in FIG. It is a figure which shows the magnetic sensor which removed the 2nd magnet 2 from FIG. 7 is a graph showing a By component applied to the anisotropic magnetoresistive element in FIG. 6. It is sectional drawing seen from the upper surface in the structure of FIG.
- FIG. 6 is a diagram illustrating a detected magnetic flux vector when magnetic ink rotated counterclockwise on the XY plane is transported in the configuration of FIG. 6. It is a figure which shows the output of each anisotropic magnetoresistive effect element in FIG. It is a graph which shows the By component applied to the anisotropic magnetoresistive effect element in Embodiment 1 of this invention. It is a figure which shows the detection magnetic flux vector when the magnetic ink perpendicular
- FIG. 3 is a top view of the magnetic sensor device in which the bridge method of the anisotropic magnetoresistive element is a T-shaped bridge with respect to FIG. It is a side view of the longitudinal direction of the magnetic sensor apparatus in Embodiment 2 of this invention. It is the top view which looked at the magnetic sensor apparatus in Embodiment 3 of this invention from the upper surface. It is the top view which looked at the magnetic sensor apparatus in Embodiment 4 of this invention from the upper surface. It is a side view of the longitudinal direction of the magnetic sensor apparatus in Embodiment 5 of this invention.
- Embodiment 6 of this invention It is a side view of the longitudinal direction of the magnetic sensor apparatus in Embodiment 6 of this invention. It is a graph which shows the By component applied to an anisotropic magnetoresistive effect element in Embodiment 6 of this invention. It is a graph which shows the By component applied to an anisotropic magnetoresistive effect element in Embodiment 6 of this invention. It is a side view of the longitudinal direction of the magnetic sensor apparatus in Embodiment 7 of this invention. It is a figure of magnetic force line distribution when the magnetic sensor apparatus in Embodiment 7 of this invention is seen from XZ plane. It is a side view of the longitudinal direction of the other magnetic sensor apparatus in Embodiment 7 of this invention.
- Embodiment 1 FIG.
- the transport direction of the detected object that is, the short direction of the magnetic sensor device is the X direction
- the longitudinal direction of the magnetic sensor device is perpendicular to the transport direction of the detected object
- the direction (line direction) is defined as the Y direction
- the direction perpendicular to the transport direction is defined as the Z direction.
- FIG. 1 is a side view in the longitudinal direction of a magnetic sensor device according to Embodiment 1 of the present invention.
- FIG. 2 is a top view of the magnetic sensor device according to Embodiment 1 of the present invention as viewed from the top. 1 and 2, the magnetic sensor device has magnetic poles different from each other in a direction perpendicular to the transport direction 10 of the detected object 6 having a magnetic material, and a direction perpendicular to the transport direction 10 is a longitudinal direction.
- the first magnet 1 extending in the longitudinal direction has the same length in the direction perpendicular to the longitudinal direction 10 and a predetermined position in the transport direction 10 from the center position in the transport direction 10 of the first magnet 1.
- an anisotropic magnetoresistive element (AMR) chip 5 in which an anisotropic magnetoresistive element (AMR) 51 is arranged in a line in the longitudinal direction, and the longitudinal end of the first magnet 1.
- the magnetic poles on the surface in contact with the first magnet 1 are different from the magnetic poles of the first magnet 1 in the direction perpendicular to the transport direction 10 and are arranged with different magnetic poles in the direction perpendicular to the transport direction 10.
- a second magnet 2 that is a magnet; That.
- an anisotropic magnetoresistive element (AMR) chip 5 is disposed on the detected object 6 side of the first magnet 1, and the magnetic poles of the first magnet 1 and the second magnet 2 are the same.
- the anisotropic magnetoresistive element chip 5 (anisotropic magnetoresistive element (AMR) 51) side is the N pole
- the opposite side of 51) is the S pole.
- the first magnet 1 is composed of a magnetic ink 61 a provided on the object to be detected 6 and an anisotropy provided on the anisotropic magnetoresistive element (AMR) chip 5.
- a bias magnetic flux is applied to the magnetoresistive element (AMR) 51 (51a, 51b).
- the first magnetic yoke 4 absorbs the variation of the first magnet 1 and applies a uniform bias magnetic flux to the anisotropic magnetoresistive element (AMR) 51.
- the AMR) chip 5 is placed on the first magnetic yoke 4 and provided on the N pole side of the first magnet 1.
- the second magnet 2 is provided with a minute magnet at one end on the S pole side of the first magnet 1 for the purpose of applying the Y-direction component By of the magnetic flux vector in a fixed direction. Note that the north pole of the second magnet 2 faces the south pole of the first magnet 1.
- the detected object 6 is transported in the X direction in FIGS. 1 and 2, and the magnetic ink 61 a is detected when passing over the anisotropic magnetoresistive element (AMR) 51.
- the anisotropic magnetoresistive element (AMR) chip 5 is arranged slightly shifted in the X direction from the center of the first magnet 1 in the X direction.
- AMR anisotropic magnetoresistive element
- FIG. 3 is a diagram showing the distribution of magnetic lines of force when the magnetic sensor device according to the first embodiment of the present invention is viewed from the XZ plane.
- the first magnet 1, the second magnet 2, and the first magnet 1 are viewed from the XZ plane.
- Magnetic field lines 7 formed by the magnetic yoke 4 are shown.
- the anisotropic magnetoresistive element (AMR) 51 51a, 51b
- the lines of magnetic force are slightly inclined in the X direction
- the anisotropic magnetoresistive element (AMR) 51 has an X direction component Bx of the magnetic flux vector. Is applied.
- the X-direction component Bx of the magnetic flux vector is a minute magnetic field of about several mT.
- AMR anisotropic magnetoresistive element
- FIG. 4 is a magnetic field vector diagram for explaining the detection principle of the magnetic sensor device.
- the magnetic force lines 7 are slightly separated in the X direction from the central axis of the length of the first magnetic yoke 4 in the transport direction of the anisotropic magnetoresistive element (AMR) 51 (51 a, 51 b).
- the magnetic flux vector 8 of the magnetic force lines 7 is slightly inclined in the transport direction (X direction) from the vertical direction (Z direction), and the transport direction of the magnetic flux vector 8 (X direction).
- the component Bx acts as a bias magnetic flux of the anisotropic magnetoresistive element (AMR) 51 (51a, 51b).
- the magnetic flux vector 8 inclines toward the detected object 6 so that the magnetic flux vector 8 is attracted to the detected object 6, so that the magnetic flux vector in the transport direction (X direction).
- the magnetic flux vector 8 is inclined toward the detected object 6 so as to be pulled by the detected object 6 as shown in FIG.
- the resistance value of the anisotropic magnetoresistive element (AMR) 51 51a, 51b) that senses the X direction component changes, The detected object 6 can be detected.
- the magnetic flux vector 8 component (Bx) in the transport direction (X direction) changes due to the passage of the detected object 6, an anisotropic magnetoresistive element (AMR) 51 (51a, 51a, 51) that senses the X direction component.
- AMR anisotropic magnetoresistive element
- the resistance value of 51b) changes, and the detected object 6 can be detected.
- the dotted arrow that intersects the magnetic flux vector 8 indicates the position of the magnetic flux vector 8 in FIG. 4A.
- FIG. 5 is a diagram of the lines of magnetic force distribution in FIG. 1 and shows the lines of magnetic force 7 formed by the first magnet 1, the second magnet 2, and the first magnetic yoke 4 as seen from the YZ plane.
- Magnetic flux in the + By direction (positive Y direction component of the magnetic flux vector) is applied to most of the anisotropic magnetoresistive element (AMR) 51 (51a, 51b).
- AMR anisotropic magnetoresistive element
- FIG. 6 shows a magnetic sensor in which the second magnet 2 is removed from FIG.
- FIG. 7 is a graph showing the By component (the Y-direction component of the magnetic flux vector) applied to the anisotropic magnetoresistive element (AMR) in FIG.
- the alternate long and short dash line indicates the center position in the longitudinal direction (Y direction) of the magnetic sensor device.
- both ends in the Y-axis direction of the graph correspond to both end portions in the longitudinal direction (Y direction) of the magnetic sensor device.
- the X-direction component Bx of the bias magnetic flux is applied to the anisotropic magnetoresistive element (AMR) 51.
- the By component (the Y direction component of the magnetic flux vector) shown in FIG. 7 is also applied to the anisotropic magnetoresistive element (AMR) 51.
- the By component has opposite polarities on the left and right with respect to the center of the magnet.
- a Bz component Z-direction component of a magnetic flux vector
- AMR anisotropic magnetoresistive element
- FIG. 8 is a cross-sectional view as viewed from above in the configuration of FIG. 6 and a diagram showing a bias magnetic flux vector applied to each anisotropic magnetoresistive element (AMR), and is a top view as viewed from above in the configuration of FIG.
- the bias magnetic flux vector 8 applied to each anisotropic magnetoresistive element (AMR) by the first magnet 1 and the first magnetic yoke 4 is shown. Due to the influence of the By component (the Y direction component of the magnetic flux vector), the bias magnetic flux vector 8a tilted in the -Y direction in the -Y direction from the center and the bias magnetic flux vector 8b tilted in the + Y direction from the center in the + Y direction Applied to a resistance effect element (AMR).
- 9 is a diagram showing the output of each anisotropic magnetoresistive element (AMR) in FIG. 8, and FIG. 9 shows the output of each anisotropic magnetoresistive element (AMR) in FIG.
- FIG. 10 is a diagram showing detected magnetic flux vectors when the magnetic ink rotated counterclockwise on the XY plane is transported in the configuration of FIG. 6, and FIG. 11 shows each anisotropic magnetoresistive effect in FIG. It is a figure which shows the output of an element (AMR).
- AMR element
- the magnetic ink 61b generates a magnetic flux change 611b perpendicular to the magnetic ink 61b. Since the magnetic flux change 611b has substantially the same direction as the bias magnetic flux vector 8a inclined in the -Y direction, the anisotropic magnetoresistive element (AMR) 51 (51a, 51a, 51a, 51b) arranged in the -Y direction from the center. In 51b), the difference between the detected magnetic flux vector 82a tilted in the -Y direction and the bias magnetic flux vector 8a becomes small, and the output becomes small as shown in FIG.
- AMR anisotropic magnetoresistive element
- the difference between the detected magnetic flux vector 82b and the bias magnetic flux vector 8b inclined in the + Y direction becomes large. As shown in FIG.
- FIG. 12 shows a By component (Y direction component of the magnetic flux vector) applied to the anisotropic magnetoresistive element (AMR) 51 (51a, 51b) in Embodiment 1 of the present invention, and FIG.
- bias magnetic flux vector 8 (8a, 8b)
- detected magnetic flux vector 81 (81a, 81b) when magnetic ink 61a perpendicular to the Y direction is conveyed
- FIG. 14 shows a counterclockwise rotation on the XY plane.
- the detected magnetic flux vector 82 (82a, 82b) when the rotated magnetic ink 61b is conveyed is shown.
- the By component applied to the anisotropic magnetoresistive element (AMR) 51 (51a, 51b) is directed in a certain direction in most areas by the second magnet. With this effect, even when the magnetic ink is rotated on the XY plane, the output of each anisotropic magnetoresistive element (AMR) 51 (51a, 51b) can be stably taken out except for the end portion. .
- the magnetization vector in the non-magnetic direction (longitudinal direction, Y direction in this case) of the anisotropic magnetoresistive element (AMR) does not reverse, and the anisotropic magnetoresistive element ( The resistance value of AMR) changes from the initial value, but this configuration can also suppress the reversal of the magnetization vector by applying a certain amount of bias magnetic flux in a certain direction in the Y direction. It becomes possible.
- the anisotropic magnetoresistive element (AMR) 51 (51a, 51b) is arranged in parallel, but the second detecting element 51b of the anisotropic magnetoresistive element (AMR) 51 is It is not always necessary to arrange them in parallel with the first detection elements 51a.
- the longitudinal direction is the X direction, and the first detection elements 51a and the second detection elements 51b form a T-bridge. The same effect can be obtained.
- the first magnetic yoke 4 is arranged for the purpose of giving a uniform bias magnetic flux to the anisotropic magnetoresistive element (AMR) 51.
- AMR anisotropic magnetoresistive element
- the first magnetic yoke 4 has the anisotropic magnetoresistive element (AMR).
- AMR 51 may be replaced with a nonmagnetic metal or a substrate that can be placed.
- FIG. Embodiment 2 of the present invention will be described with reference to the drawings.
- FIG. 16 is a side view in the longitudinal direction of the magnetic sensor device according to the second embodiment of the present invention.
- the gradient magnet 3 has a configuration in which the thickness in the magnetic pole direction (Z direction) decreases as it goes in the line direction (in the Y direction). In FIG. 16, it decreases linearly.
- Z direction the thickness in the magnetic pole direction
- FIG. 16 decreases linearly.
- the magnetic ink 61a provided on the detection object 6 and the anisotropic magnetoresistive element (AMR) 51 (51a) provided on the anisotropic magnetoresistive element (AMR) chip 5 are provided. , 51b) to absorb the variation of the gradient magnet 3 and the first magnet 1 for applying the bias magnetic flux, and to provide a uniform bias magnetic flux to the anisotropic magnetoresistive element (AMR) 51 (51a, 51b).
- the first magnetic yoke 4 is provided, and the detected object 6 is conveyed in the X direction in the figure and is magnetic when passing over the anisotropic magnetoresistive element (AMR) 51 (51a, 51b). Ink 61a is detected.
- the inclined magnet 3 in FIG. 16 has a linearly inclined shape, it does not necessarily have a linearly inclined shape, and may have a stepped shape.
- FIG. 17 is a top view of the magnetic sensor device according to the third embodiment of the present invention as viewed from above.
- the side view seen from the conveyance direction has the same configuration as FIG.
- the X-direction component of the bias magnetic flux vector 8 is applied in the + X direction to the first detection element 52a and the second detection element 52b.
- anisotropic magnetoresistive elements (AMR) 52 52a, 52b
- AMR anisotropic magnetoresistive elements
- AMR anisotropic magnetoresistive element
- the synergistic effect of both embodiments appears, and the anisotropic magnetoresistive element (AMR) 52 has a Y direction.
- uniform By is applied over the entire longitudinal direction of the first magnet 1, so that the anisotropic magnetoresistive elements (AMR) 5 (52) arranged in a line are arranged.
- FIG. 18 is a top view of the magnetic sensor device according to the fourth embodiment of the present invention as viewed from above.
- the side view seen from the carrying direction has the same configuration as FIG.
- the same or equivalent components as those in FIG. it is assumed that the X-direction component of the bias magnetic flux vector 8 is applied in the + X direction to the first sensing element 52a and is applied in the ⁇ X direction to the second sensing element 52b.
- the anisotropic magnetoresistive elements (AMR) 52 are mounted in two rows on the XY plane, tilted from the longitudinal direction (Y direction) to the transport direction (X direction), and the first detection The element 52a and the second detection element 52b are symmetrical with respect to the Y axis.
- the Y axis which is an axis of line symmetry between the first detection element 52a and the second detection element 52b, passes through the center of the carrying direction of the magnet 1 (X direction).
- the first sensing element 52a is biased in the + X direction
- the second sensing element 52b is biased in the ⁇ X direction.
- the synergistic effect of both embodiments appears, and the anisotropic magnetoresistive element (AMR) 52 has a Y direction.
- uniform By is applied over the entire longitudinal direction of the first magnet 1, so that the anisotropic magnetoresistive elements (AMR) 5 (52) arranged in a line are arranged.
- FIG. 19 is a side view in the longitudinal direction of the magnetic sensor device according to the fifth embodiment of the present invention.
- the same or equivalent components as those in FIG. In this configuration in order to convey the detected object 6 in a non-contact manner, the first magnet 1 and the second magnet 2 are disposed on the upper side of the detected object 6, and the anisotropic magnetoresistive element (AMR) chip is disposed on the lower side. 5.
- a magnetic carrier 9 intended to provide a uniform bias magnetic flux is disposed. Even in the case of this configuration, the same effect can be obtained by performing the same arrangement of magnets as in Embodiments 1 to 4 of the present invention and mounting with an inclined anisotropic magnetoresistive element (AMR).
- AMR anisotropic magnetoresistive element
- FIG. 20 is a side view in the longitudinal direction of the magnetic sensor device according to the sixth embodiment of the present invention.
- FIG. 21 is a graph showing the By component applied to the anisotropic magnetoresistive element (AMR) in the sixth embodiment of the present invention.
- FIG. 22 is a graph showing the By component applied to the anisotropic magnetoresistive element (AMR) in the sixth embodiment of the present invention. 20, the same reference numerals are given to the same or equivalent components as in FIG. 1, and the description thereof is omitted.
- the second magnet 2 is provided at one end of the first magnet 1, but in the sixth embodiment of the present invention, the small second magnet 2a, 2b are provided at both ends of the first magnet 1, respectively.
- the N poles of the second magnets 2 a and 2 b face the S pole of the first magnet 1.
- the Y-direction component By of the magnetic flux vector at both ends of the first magnet 1 approaches zero.
- a dotted line 8c is a Y-direction component By component of the magnetic flux vector when the small second magnets 2a and 2b are not provided, and a solid line 8d is provided with the small second magnets 2a and 2b.
- the bias magnetic flux vector applied to the anisotropic magnetoresistive element (AMR) 51 is Y of the magnetic flux vector over the entire longitudinal direction of the first magnet 1.
- the direction component By is made uniform near zero.
- the anisotropic magnetoresistive element (AMR) 5 is the same as the anisotropic magnetoresistive element (AMR) 52 (52a, 52b) on the XY plane as shown in FIG.
- the first sensor element 52a and the second sensor element 52b are tilted on the XY plane in line symmetry with respect to the Y axis as shown in FIG.
- the anisotropic magnetoresistive effect element (AMR) 5 (52) is arranged in this way, the anisotropic magnetoresistive effect element (AMR) 52 has a positive side in the Y direction as shown in FIG.
- the Y-direction component By of the uniform magnetic flux vector is applied over the entire longitudinal direction of the first magnet 1, an anisotropic magnetoresistive element (AMR) 5 arranged in a line shape is used.
- AMR anisotropic magnetoresistive element
- a dotted line 8e is a By component (Y direction component of the magnetic flux vector) when the anisotropic magnetoresistive element (AMR) 52 (52a, 52b) is not inclined, and a solid line 8f is anisotropic.
- This is a By component (Y-direction component of a magnetic flux vector) when the magnetoresistive magnetoresistive element (AMR) 52 (52a, 52b) is tilted on the XY plane.
- the second magnets 2a and 2b are respectively provided at both ends of the first magnet 1, but as in the second embodiment (FIG. 16) of the present invention.
- the inclined magnet 3 may be used, and the inclined magnet 3 may have a configuration in which the thickness in the magnetic pole direction (Z direction) decreases from the both ends toward the central portion in the line direction (Y direction).
- FIG. 23 is a longitudinal side view of the magnetic sensor device according to the seventh embodiment of the present invention.
- the magnetic sensor device according to the seventh embodiment of the present invention is on the surface where the second magnet 2 is not disposed at the S pole of the first magnet 1 of the magnetic sensor device according to the first embodiment of the present invention shown in FIG.
- the second magnetic yoke 11 is arranged. 23 the same reference numerals are given to the same or equivalent components as those in FIG. 1, and the description thereof is omitted.
- FIG. 24 is a diagram of the lines of magnetic force when the magnetic sensor device according to the seventh embodiment of the present invention is viewed from the XZ plane. 24, the same reference numerals are given to the same or equivalent components as those in FIG. 3, and the description thereof is omitted.
- the second magnetic yoke 11 is arranged on the surface of the magnetic sensor device in the direction perpendicular to the transport direction 10 at the S pole of the first magnet 1 except for the surface on which the second magnet 2 is arranged. Has been.
- the magnetic flux (magnetic line 7) from the S pole of the first magnet 1 is concentrated on the second magnetic yoke 11, and the magnetic flux from the first magnetic yoke 4 on the side surfaces 11a and 11b in the longitudinal direction of the second magnetic yoke 11.
- a magnetic circuit is formed in which (magnetic field lines 7) concentrate and enter.
- the first magnetic yoke 4 disposed on the north pole of the first magnet 1 and the south pole of the first magnet 1.
- the magnetic path between the first magnetic yoke 4 and the magnetic flux density from the first magnetic yoke 4 disposed at the north pole of the first magnet 1 is reduced.
- FIG. 25 shows a magnetic sensor according to Embodiment 6 of the present invention on a surface perpendicular to the conveying direction of the south pole of the first magnet 1 between the second magnet 2a and the second magnet 2b.
- FIG. 10 is a side view in the longitudinal direction of another magnetic sensor device according to Embodiment 7 of the present invention, in which a second magnetic yoke 11 is disposed.
- the same reference numerals are given to the same or equivalent components as in FIG. 20, and the description thereof is omitted.
- the magnetic poles of the first magnet 1 and the second magnet 2 are the anisotropic magnetoresistive element chip 5 (anisotropic magnetoresistive effect).
- the element (AMR) 51, 52) side is the N pole
- the opposite side of the anisotropic magnetoresistive element chip 5 is the S pole
- the directions of the north and south poles of the magnets (the first magnet 1 and the second magnet 2) are opposite, that is, the magnetic poles of the first magnet 1 and the second magnet 2 are anisotropic magnetoresistive.
- the effect element chip 5 (anisotropic magnetoresistive effect element (AMR) 51, 52) side is the S pole, and the anisotropic magnetoresistive effect element chip 5 (anisotropic magnetoresistive effect element (AMR) 51, 52).
- AMR anisotropic magnetoresistive effect element
Abstract
Description
この発明の実施の形態1を含む全ての実施の形態において、被検知物の搬送方向即ち磁気センサ装置の短手方向をX方向、被検知物の搬送方向に直交する磁気センサ装置の長手方向(ライン方向)をY方向、磁気センサ装置の短手方向(搬送方向)及び長手方向(ライン方向)に直交する方向(搬送方向に鉛直する方向)をZ方向と定義する。
この発明の実施の形態2について、図を用いて説明する。図16は、この発明の実施の形態2における磁気センサ装置の長手方向の側面図である。図16において、傾斜磁石3は、ライン方向(Y方向に)向かうに従い、磁極方向(Z方向)の厚みが減少していく構成となっている。図16では、直線的に傾斜して減少している。図16において、図1と同一若しくは同等の構成要素には同一符号を付し、その説明を省略する。
図17は、この発明の実施の形態3における磁気センサ装置を上面からみた上面図である。図17において、搬送方向からみた側面図は図6と同じ構成である。図17において、図1と同一若しくは同等の構成要素には同一符号を付し、その説明を省略する。このときバイアス磁束ベクトル8のX方向成分は、第1の検知素子52a、第2の検知素子52bに対して+X方向に印加されているものとする。本構成では、異方性磁気抵抗効果素子(AMR)52(52a、52b)をXY平面上で、2列で、長手方向(Y方向)から搬送方向(X方向)へ、同じ方向に傾けて実装している。この構成においては、X方向のバイアス磁束により、第1の検知素子52a、第2の検知素子52bどちらに対しても、異方性磁気抵抗効果素子(AMR)の長手+Y方向(非感磁方向)に一定方向に磁束を印加することが可能となり、第1の磁石1等により作られるY方向の磁束密度を打ち消し、同じ向きにByを印加することが可能となる。そのためこの発明の実施の形態1と同様の効果が得られる。
図18は、この発明の実施の形態4における磁気センサ装置を上面からみた上面図である。図18において、搬送方向からみた側面図は図6と同じ構成である。図18において、図17と同一若しくは同等の構成要素には同一符号を付し、その説明を省略する。このときバイアス磁束ベクトル8のX方向成分は、第1の検知素子52aに対しては+X方向に印加され、第2の検知素子52bに対しては-X方向に印加されているものとする。本構成では、異方性磁気抵抗効果素子(AMR)52をXY平面上に2列で、長手方向(Y方向)から搬送方向(X方向)へ、傾けて実装しており、第1の検知素子52aと第2の検知素子52bでY軸に対して線対称な構成となっている。また、第1の検知素子52aと第2の検知素子52bとの線対称軸であるY軸は、載1の磁石1の搬送方向(X方向)の中央部を通っている。この構成においては、第1の検知素子52aに対しては+X方向のバイアス磁束、第2の検知素子52bに対しては-X方向のバイアス磁束により、どちらに対しても、異方性磁気抵抗効果素子(AMR)の長手+Y方向(非感磁方向)に一定方向に磁束を印加することが可能となり、第1の磁石1等により作られるY方向の磁束密度を打ち消し、同じ向きにByを印加することが可能となる。そのため、この発明の実施の形態1と同様の効果が得られる。
図19は、この発明の実施の形態5における磁気センサ装置の長手方向の側面図である。図19において、図1と同一若しくは同等の構成要素には同一符号を付し、その説明を省略する。本構成では、被検知物6を非接触で搬送させるために、被検知物6の上側に第1の磁石1と第2の磁石2、下側に異方性磁気抵抗効果素子(AMR)チップ5、均一なバイアス磁束を与えることを目的とした磁性体キャリア9を配置している。この構成の場合でも、この発明の実施の形態1から4と同様の磁石の配置や異方性磁気抵抗効果素子(AMR)を傾けた実装を行うことにより、同じ効果が得られる。
図20は、この発明の実施の形態6における磁気センサ装置の長手方向の側面図である。図21は、この発明の実施の形態6における、異方性磁気抵抗効果素子(AMR)に印加されるBy成分を示すグラフである。図22は、この発明の実施の形態6における、異方性磁気抵抗効果素子(AMR)に印加されるBy成分を示すグラフである。図20において、図1と同一若しくは同等の構成要素には同一符号を付し、その説明を省略する。
図23は、この発明の実施の形態7における磁気センサ装置の長手方向の側面図である。この発明の実施の形態7における磁気センサ装置は、図1に示すこの発明の実施の形態1における磁気センサ装置の第1の磁石1のS極において第2の磁石2が配置されていない面上に、第2の磁性体ヨーク11を配置したものである。図23において、図1と同一若しくは同等の構成要素には同一符号を付し、その説明を省略する。
2 第2の磁石、
2a 第2の磁石、
2b 第2の磁石、
3 傾斜磁石、
4 第1の磁性体ヨーク、
5 異方性磁気抵抗効果素子チップ、
51 異方性磁気抵抗効果素子、
51a 異方性磁気抵抗効果素子(第1の検知素子)、
51b 異方性磁気抵抗効果素子(第2の検知素子)、
52 異方性磁気抵抗効果素子、
52a 異方性磁気抵抗効果素子(第1の検知素子)、
52b 異方性磁気抵抗効果素子(第2の検知素子)、
6 被検知物、
61a 磁性インク、
61b 磁性インク、
611a 磁束変化、
611b 磁束変化、
7 磁力線、
8 バイアス磁束ベクトル、
8a バイアス磁束ベクトル、
8b バイアス磁束ベクトル、
8c 点線、
8d 実線、
8e 点線、
8f 実線、
81 検出磁束ベクトル、
81a 検出磁束ベクトル、
81b 検出磁束ベクトル、
82 検出磁束ベクトル、
82a 検出磁束ベクトル、
82b 検出磁束ベクトル、
9 磁性体キャリア、
10 搬送方向、
11 第2の磁性体ヨーク、
11a 側面、
11b 側面。
Claims (12)
- 磁性体を有する被検知物の搬送方向に鉛直する方向に互いに異なる磁極を有し、前記搬送方向に直交する方向を長手方向として前記長手方向に延在する磁石と、
前記磁石の前記被検知物側の磁極に、前記長手方向にライン状に配置した異方性磁気抵抗効果素子と、を備え、
前記磁石は、前記長手方向の端部が前記長手方向の中央部よりも、前記搬送方向に鉛直する方向の長さが長い磁気センサ装置。 - 前記異方性磁気抵抗効果素子と前記磁石との間に磁性体ヨークを備えた請求項1に記載の磁気センサ装置。
- 前記磁石は、前記搬送方向に鉛直する方向の長さが前記長手方向に亘って同じである第1の磁石と、
前記第1の磁石の前記長手方向の端部であって前記被検知物側と反対側の磁極に、前記搬送方向に鉛直する方向に、前記第1の磁石に接する面の磁極が前記第1の磁石の磁極に異なり、前記搬送方向に鉛直する方向に互いに異なる磁極を有して配置した第2の磁石と、
を備えた請求項1または2に記載の磁気センサ装置。 - 前記第1の磁石の前記被検知物側と反対側の磁極であって、前記第2の磁石が配置された面を除く面に第2の磁性体ヨークを備えた請求項3に記載の磁気センサ装置。
- 前記磁石は、前記搬送方向に鉛直する方向の長さが、前記長手方向の端部から中央部に向かうにつれ、短くなっていく請求項1または2に記載の磁気センサ装置。
- 前記異方性磁気抵抗効果素子は、前記長手方向から前記搬送方向側へ、所定の角度で傾斜している請求項1から5のいずれか1項に記載の磁気センサ装置。
- 磁性体を有する被検知物の搬送方向に鉛直する方向に互いに異なる磁極を有し、前記搬送方向に直交する方向を長手方向として前記長手方向に延在する磁石と、
前記磁石の前記被検知物側の磁極に、前記長手方向にライン状に配置した異方性磁気抵抗効果素子と、を備え、
前記異方性磁気抵抗効果素子は、前記長手方向から前記搬送方向側へ、所定の角度で傾斜している磁気センサ装置。 - 前記異方性磁気抵抗効果素子は、前記長手方向に2列で配列されている請求項1から7のいずれか1項に記載の磁気センサ装置。
- 前記異方性磁気抵抗効果素子の2列の前記搬送方向の中心は、前記磁石の前記搬送方向における中央位置から前記搬送方向の所定の位置にシフトしている請求項8に記載の磁気センサ装置。
- 前記異方性磁気抵抗効果素子は、一方の列が前記磁石の前記搬送方向における中央位置から前記磁石の前記搬送方向の一端側へシフトし、他方の列が前記磁石の前記搬送方向における中央位置から前記磁石の前記搬送方向の他端側へシフトしている請求項8に記載の磁気センサ装置。
- 前記異方性磁気抵抗効果素子は、前記長手方向に2列で配列され、一方の列が前記磁石の前記搬送方向における中央位置から前記磁石の前記搬送方向の一端側へシフトし、他方の列が前記磁石の前記搬送方向における中央位置から前記磁石の前記搬送方向の他端側へシフトし、一方の列と他方の列とで前記傾斜の方向が互いに異なる請求項6または7に記載の磁気センサ装置。
- 前記異方性磁気抵抗効果素子は、前記搬送方向における中央位置を通る前記長手方向を基準に、線対称で配置されている請求項11に記載の磁気センサ装置。
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