WO2015173409A1 - Condensateur en vitrocéramique pour des applications de haute-tension - Google Patents

Condensateur en vitrocéramique pour des applications de haute-tension Download PDF

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Publication number
WO2015173409A1
WO2015173409A1 PCT/EP2015/060789 EP2015060789W WO2015173409A1 WO 2015173409 A1 WO2015173409 A1 WO 2015173409A1 EP 2015060789 W EP2015060789 W EP 2015060789W WO 2015173409 A1 WO2015173409 A1 WO 2015173409A1
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WO
WIPO (PCT)
Prior art keywords
glass
metallization
ceramic
capacitor
radius
Prior art date
Application number
PCT/EP2015/060789
Other languages
German (de)
English (en)
Other versions
WO2015173409A8 (fr
Inventor
Martin Letz
Nikolaus Schultz
Guenter Weidmann
Michael Kluge
Joern Besinger
Original Assignee
Schott Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott Ag filed Critical Schott Ag
Publication of WO2015173409A1 publication Critical patent/WO2015173409A1/fr
Publication of WO2015173409A8 publication Critical patent/WO2015173409A8/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/068—Glass compositions containing silica with less than 40% silica by weight containing boron containing rare earths
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0072—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition having a ferro-electric crystal phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/16—Compositions for glass with special properties for dielectric glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/129—Ceramic dielectrics containing a glassy phase, e.g. glass ceramic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/365—Coating different sides of a glass substrate

Definitions

  • the invention relates generally to capacitors with glass ceramic as a dielectric, and in particular to
  • Ceramic capacitors are known (DE 2210094, DE3825024A1, DE3905444A1), in which the dielectric of a
  • the main constituent of the ceramic is called metal oxides, which are baked together by sintering processes and are therefore porous.
  • metal oxides have a high dielectric constant in relation to glass, pores set the dielectric strength of
  • Glass-ceramic capacitors as a dielectric have a lower resistance to ceramic capacitors
  • DE 1 951 624 describes a process for
  • stacked capacitors which are composed of alternating layers of a dielectric and of metal layers connected by application of pressure and temperature to form a compact unit.
  • the dielectric is composed of alternating layers of a dielectric and of metal layers connected by application of pressure and temperature to form a compact unit.
  • Layers are produced from a crystallisable glass in an organic binder, wherein the organic constituents are driven off by heating and the glass is converted to a glass ceramic by means of heat treatment.
  • WO 2005/095301 Al describes a glass-ceramic composition with at least one ferrite and at least one glass material with a content of bismuth oxide in
  • the glass-ceramic composition is present as a powder mixture, also mixed with an organic binder, and can be sintered.
  • the disadvantage is the relatively high percentage of pores.
  • Glass ceramic is produced by ceramizing from a starting glass and is extremely low in pores. Such glass ceramics are suitable as part of a capacitor or a high-frequency filter.
  • nanoscale barium titanate and a process for their preparation.
  • Glass ceramic becomes a perovskite phase of the formula
  • the size of the crystallites is in the range of lOnm to 50mp, preferably from 100 nm to 1 pm.
  • the invention has for its object to provide how glass ceramic capacitors can be built sufficiently thin to be interesting in practice for high voltage applications.
  • dielectric field strength in the glass ceramic does not exceed 1 to 3 KV / mm. This would be the case for applications in one
  • the invention is based on the discovery that glass ceramic containing ferroelectric material can then be used for the high voltage applications in capacitors, when the glass ceramic is extremely porous or nonporous and the ferroelectric material in
  • a pore fraction in the volume of less than 0.03% is considered within the scope of the invention to be "extremely low in pores" Crystallites of the ferroelectric material should
  • Glass ceramic BaTi03 is achieved, but after all, lies in the order of the ferroelectric domains. This means that the glass ceramic must be recovered from the liquid glass phase under stringent manufacturing conditions to produce ferroelectric material which, when reversed in polarity during operation of the capacitor
  • Hysteresis provides a tolerable power loss to be useful for high voltage applications in capacitors.
  • ferroelectric material can also be used as ferroelectric material.
  • the paraelectric crystallites can be in the order of a few pm. This means crystallite sizes in the range 0.1 pm to 50 pm. Thus, the crystallites are much smaller than the thickness of the dielectric
  • the dielectric glass ceramic body forms
  • Metallization layers can be determined as electrodes for a condenser to be designed according to the teachings of the invention.
  • the teaching of the invention is also applicable in the manufacture of capacitors made of
  • Breakdown voltage the voltage across the capacitor up to the Breakdown
  • Breakdown voltage of a glass-ceramic capacitor increases with decreasing thickness of the glass-ceramic layer. This is a great help in designing high performance capacitors of small design with high breakdown voltage.
  • glass-ceramic capacitors are made available that are of spatially small dimension, but in which breakdowns of the electric field occur only to a tolerable level or can be virtually ruled out. Furthermore, corresponding capacitors can be produced inexpensively.
  • Substrate a substrate thickness (d), a substrate radius (ri) and a disc top, a disc bottom and a
  • volume filling has disc edge. The extent of the absence of pores is indicated by means of the so-called volume filling. Latter is at least 99.97% for the dielectric glass ceramic body of the capacitor according to the invention. In practice, a volume filling of 99.9999% is achieved. High breakdown field strengths are considered to be in the range of 10 kV / mm to 100 kV / mm and above.
  • the glass-ceramic capacitor is the first one
  • Metalltechnischesradius which covers the disc top to form a first metallization edge and leaving a top disc edge portion, and as a second electrode, a second
  • predetermined, defined geometry is measured whose breakdown strengths are measured for a Weibull statistics, with values being worked as follows:
  • Dielectric strength can be between 0.18 and 0.2 and for ß between 0.5 and 1, and ⁇ to 2/3
  • the glass ceramic body in a preferred embodiment has the following composition in mol%:
  • At least BaTi0 3 is present as a crystallized ferroelectric phase, wherein the glass formation is the partial replacement of Ba by Ce or La results.
  • the glass-ceramic body in a preferred embodiment has the following composition in mol%:
  • At least Ba4Al 2 is ii 0 O27 as a
  • crystallized paraelectric phase wherein the glass formation is the partial replacement of Ba by La and the partial replacement of Ti by Zr.
  • Capacitor according to the invention each have an annular zone with increased resistivity compared to
  • the geometry of the capacitor is described by the ratio of the diameter (2r 2 ) of the metallization to the substrate thickness (d). This ratio is in a range between 10 and 300, preferably in a range between 15 and 200.
  • the ferroelectric material of the capacitor has a relative permittivity in the range between 100 and 600, preferably in the range between 200 and 500.
  • relative permittivity is the standard term for the dielectric constant or the dielectric constant.
  • the relative permittivity is a measure of the permeability of a material for electric fields. It results as the ratio of the permittivity of the respective material to the electric field constant.
  • the dielectric material of the capacitor has a relative permittivity in the range between 15 and 70, preferably in the range between 25 and 50.
  • the capacitor according to the invention is the thickness of
  • the wafer edge of the glass ceramic body of the capacitor may alternatively be rounded, which also increases the breakdown voltage.
  • the capacitor has a glass ceramic body, which consists of individual successive stacked substrate disks is constructed as a disk package with additional internal metallization layers on the individual substrate disks.
  • This embodiment of the capacitor according to the invention may be modified such that the inner metallization layers occupy a larger area than the outer metallization layer.
  • FIG. 1 shows a section through a glass-ceramic capacitor of a first embodiment in perspective
  • FIG. 7 shows a section through a glass-ceramic capacitor of a third embodiment in a perspective view
  • FIG. 8 shows a section through a glass-ceramic capacitor of a fourth embodiment in perspective view
  • the glass-ceramic is a glass in which crystallization from the melt has begun. This presupposes that nucleation has already begun before the crystallization processes. If glass-ceramic is to be used as a dielectric for capacitors, then the constituents of the starting materials must be selected so as to give a uniform and dense distribution of nucleating nuclei. If crystallites have formed from the glass melt, these influence the relative dielectric constant ⁇ . The higher the value of ⁇ achieved, the thinner the dielectric in a capacitor can be for a given one
  • Dielectric strength can be selected.
  • Table 2 gives further paraelectric phase molar% compositions for glass-ceramics which are described in US Pat
  • Dielectric in capacitors are particularly suitable.
  • Glass ceramic perform. It is cooled from the melting temperature of the glass until it reaches a
  • Crystallization temperature at which one then remains until the crystallites have grown to the size desired for the glass-ceramic.
  • the electron micrograph of FIG. 10 shows the porelessness of the sample and the fineness
  • FIG. 9 shows an electron micrograph of a ceramic dielectric.
  • Dielectric constant extremely high values of 10,000 and more. Below the room temperature is a
  • Ferroelectrics are nonlinear dielectrics that exhibit hysteresis in polarization as a function of the applied electric field.
  • This comprises as a dielectric a glass ceramic body 10, the cut and
  • Glass ceramic body 10 forms a disk-shaped substrate with a substrate thickness d, with a substrate radius ri, with a disc top, with a disc bottom and with a disc rim.
  • the glass ceramic body 10 was, as can be seen from the comparison of FIG. 9 to FIG. 10, produced with extremely little pores or without pores from a liquid glass phase.
  • the barium titanate crystallites in Fig. 10 are slightly lighter than the residual glass phase and about 30-50 nm in size.
  • the barium aluminum titanate crystallites are about 70 nm in size, and there are many pores in the ceramic body that appear dark.
  • the degree of freedom from pores is specified by means of the volume filling. This is 10 in the Glaskeranikharm
  • the porosity should not exceed 0.03% in any case.
  • the glass ceramic body 10 is containing
  • ferroelectric material BaTi0 3 crystallite sizes in the range of 30 nm to 50 nm measured. This is the order of magnitude of the ferroelectric crystallites in the
  • Magnitude range of ferroelectric domains of about 10 nm.
  • Material Ba 4 Al 2 Tii 0 O27 are crystallite sizes in the range 1 pm measured to 10 pm. The crystallites are much smaller than the thickness of the glass ceramic body for
  • Capacitors (on the order of 1mm) and the structure of the capacitors appear outward
  • An exemplary embodiment of a glass ceramic body 10 with the ferroelectric phase BaTiC> 3 has the following
  • the ferroelectric material of the glass-ceramic body 10 has a relative permittivity in the range between 100 and 600, preferably in the range between 200 and 500.
  • La 2 Ti 2 Si0 9 has the following composition in wt% and mol%:
  • the paraelectric material of the glass-ceramic body 10 has a relative permittivity in the range between 15 and 70, preferably in the range between 25 and 50.
  • Fig. 1 is on the top of the
  • Glass ceramic body 10 is applied a first metallization region 11 with radius r 2 , so that an upper
  • Disk edge region 12 is formed by a metallization edge 15. Mirrored to the top, the
  • Capacitor 1 on its underside a second
  • Metallization region 13 with radius r 2 and with a second metallization edge 16 and a lower
  • Metallization layer 11, 13. 2 shows the dependence of the normalized maximum electric field strength E max / E 0 on the ratio of radius r 2 of the two metallization layers 11, 13 and substrate thickness d.
  • the lower curve shows this curve in the event that an AC voltage to the capacitor 1 with a
  • Ratio r 2 / d decreases. This implies the surprising fact that the field increase, the maximum electric field E max decreases at the point of greatest breakdown risk, the smaller the ratio ri / d or r 2 / d, that is, the thinner the glass ceramic body 10 is. In other words, the breakdown field strength increases with decreasing thickness of the glass ceramic body, which also for the
  • Breakdown field strengths d. H. the maximum electrical
  • E field and E on mean the homogeneous electric field inside the test capacitors.
  • the value of "b" can be read as a slope, the lower the tolerable
  • Puncture probability the higher the value of "b.” Typical values of "b" are between 3 and 6, very good values can rise to 18. f) In numerical simulations, the inventors have fit values (), ⁇ ), ( ⁇ ) for calculation formulas determined, wherein between 0.18 and 0.2, ß can be between 0.5 and 1 and ⁇ can be assumed to 2/3.
  • Design sizes of glass ceramic capacitors such as disk radius ri, metallization radius r 2 and
  • E max can be calculated for the capacitor to be constructed.
  • FIG. 3 a second embodiment of a glass-ceramic capacitor 2 is described below, for the geometry and
  • Peak value of the electric field at a given geometry and operating frequency is minimal.
  • the exiting edge field lines are distributed on the ring zones 21, 22 and do not remain concentrated on the metallization edge.
  • FIG. Fig. 4 shows in a diagram the
  • Dielectrics results in almost the same favorable value for the resistivity of the annular zones 21, 22 in the range 1 x 10 8 to 1 x 10 10 Qm and an optimum at 1 x 10 9 Qm.
  • Fig. 5 shows in a diagram the dependence of
  • Glass ceramic body as a dielectric and for a
  • FIG. 6 is an equivalent circuit diagram for the embodiment according to FIG. 3.
  • the annular zone forms an RC series element with ohmic resistance R 2 and capacitance C 2 in addition to the RC parallel element with ohmic resistance Ri and capacitance Ci. If a capacitor is designed according to FIG. 3, it is checked whether the setpoint cutoff frequency or cutoff frequency f c is adhered to according to known engineering rules.
  • Capacitor designed for operating frequencies below 1 kHz a capacitor was defined with the following values:
  • Thickness of the dielectric 1 mm
  • a material with a specific resistance p of 2 kQm in a thickness of 5 pm fulfills this condition and can be applied as a paste by coating on the glass-ceramic body
  • FIGS. 1 and 3 can be varied in two ways.
  • the resulting shape of the glass ceramic body is also referred to as the Rogowski profile.
  • the disc edge of the glass ceramic body can be rounded.
  • Fig. 7 is a section through a capacitor 3 in a perspective view.
  • the capacitor 3 is provided on its upper side with a metallization layer 11 and on its underside with a metallization layer 13, wherein in each case an edge region 12, 14 remains free.
  • the capacitor 3 has a laminated glass ceramic body 30, the
  • Capacitor 3 is thus constructed as a disk package and consists of successively connected individual capacitors, whereby the possible total voltage of the capacitor 3 with respect to the embodiments of FIGS. 1 or 3 is increased. At the same time the rising
  • d layer thickness of the dielectric.
  • the dielectric strength is quadratic in W, while ⁇ only linear in the formulas of the maximum
  • the middle layer can be omitted for reasons of symmetry, as shown in FIG. 8.
  • Embodiment of FIG. 7 or 8 take the
  • Metallization layers in the interior of the glass ceramic body 30 a larger area (have a slightly larger radius), as the first and the second
  • the Metallization layer on the top and the bottom of the glass ceramic body In order to obtain a significant effect on the field distribution at the critical point, the marginal edges 15, 16 of the metallization layers, the degree of enlargement of the metallization layers 31 in the interior of the glass ceramic body must be in the order of the thicknesses of the individual glass ceramic slices 30a. If such glass-ceramic disks are 1 mm thick, the inner metallization layers 31 should have a radius larger by about 1 mm than the first or second
  • Metallization layer 11, 13 Referring now to Fig. 8, a fourth embodiment of the capacitor of the present invention will be described
  • FIG. 8 is a section through a capacitor 4 in a perspective view, which is constructed with respect to the layer sequence of the laminated glass ceramic body 40 of glass ceramic discs and metallization layers same as the capacitor 3 in Fig. 7. However, the individual discs have a center of the
  • Disk packs towards increasing thickness Measured by the number of disks, the capacitor 4 has an increased dielectric strength.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
  • Glass Compositions (AREA)

Abstract

Condensateur pour applications de haute-tension comprenant un corps en vitrocéramique (10) en tant que diélectrique et des couches de métallisaiton (11, 13) en tant qu'électrodes. Sur la base d'une série de condensateurs d'essai, les valeurs paramétriques d'un condensateur à concevoir sont déterminées sur la base de formules.
PCT/EP2015/060789 2014-05-16 2015-05-15 Condensateur en vitrocéramique pour des applications de haute-tension WO2015173409A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014106919.6A DE102014106919B4 (de) 2014-05-16 2014-05-16 Verfahren zur Konstruktion und Herstellung von Glaskeramik Kondensatoren für Hochspannungsanwendungen und nach dem Verfahren bemessener und hergestellter Glaskeramik-Kondensator
DEDE2014106919.6 2014-05-16
DE102014106919.6 2014-05-16

Publications (2)

Publication Number Publication Date
WO2015173409A1 true WO2015173409A1 (fr) 2015-11-19
WO2015173409A8 WO2015173409A8 (fr) 2016-01-07

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112159110A (zh) * 2020-10-10 2021-01-01 陕西科技大学 一种通过控制析晶动力调整铁电性的储能玻璃陶瓷、制备方法及应用
WO2021244960A1 (fr) 2020-06-05 2021-12-09 Signify Holding B.V. Circuit électronique avec isolation

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115925263B (zh) * 2022-12-07 2023-12-29 陕西科技大学 一种三明治结构的介电储能微晶玻璃及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2210094A1 (de) * 1971-03-02 1972-09-14 Murata Manufacturing Co Hochspannungskondensator
DE102008011206A1 (de) * 2008-02-26 2009-09-10 Schott Ag Glaskeramik, Verfahren zur Herstellung einer Glaskeramik und Verwendung einer Glaskeramik
DE102009024645A1 (de) * 2009-06-04 2011-01-13 Schott Ag Glaskeramik mit nanoskaligem Bariumtitanat und Verfahren zu deren Herstellung
WO2013076116A2 (fr) * 2011-11-24 2013-05-30 Schott Ag Vitrocéramique servant de diélectrique dans la plage haute fréquence

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Publication number Priority date Publication date Assignee Title
US3604082A (en) * 1968-10-30 1971-09-14 Corning Glass Works Method of making a capacitor
US4205364A (en) * 1978-10-23 1980-05-27 Phase Industries, Inc. Microcapacitors having beveled edges and corners
JPH0616459B2 (ja) * 1987-07-23 1994-03-02 株式会社村田製作所 磁器コンデンサの製造方法
JPH01220814A (ja) * 1988-02-29 1989-09-04 Murata Mfg Co Ltd 磁器コンデンサ
WO2005095301A1 (fr) * 2004-03-30 2005-10-13 Siemens Aktiengesellschaft Composition de vitroceramique, composant electrique pourvu d'une telle composition de vitroceramique, et corps multicouche ceramique comportant un tel composant electrique

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2210094A1 (de) * 1971-03-02 1972-09-14 Murata Manufacturing Co Hochspannungskondensator
DE102008011206A1 (de) * 2008-02-26 2009-09-10 Schott Ag Glaskeramik, Verfahren zur Herstellung einer Glaskeramik und Verwendung einer Glaskeramik
DE102009024645A1 (de) * 2009-06-04 2011-01-13 Schott Ag Glaskeramik mit nanoskaligem Bariumtitanat und Verfahren zu deren Herstellung
WO2013076116A2 (fr) * 2011-11-24 2013-05-30 Schott Ag Vitrocéramique servant de diélectrique dans la plage haute fréquence

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021244960A1 (fr) 2020-06-05 2021-12-09 Signify Holding B.V. Circuit électronique avec isolation
CN112159110A (zh) * 2020-10-10 2021-01-01 陕西科技大学 一种通过控制析晶动力调整铁电性的储能玻璃陶瓷、制备方法及应用

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DE102014106919B4 (de) 2016-05-04
DE102014106919A1 (de) 2015-11-19

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