WO2015163108A1 - 波長変換接合部材、波長変換放熱部材および発光装置 - Google Patents
波長変換接合部材、波長変換放熱部材および発光装置 Download PDFInfo
- Publication number
- WO2015163108A1 WO2015163108A1 PCT/JP2015/060516 JP2015060516W WO2015163108A1 WO 2015163108 A1 WO2015163108 A1 WO 2015163108A1 JP 2015060516 W JP2015060516 W JP 2015060516W WO 2015163108 A1 WO2015163108 A1 WO 2015163108A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wavelength conversion
- bonding layer
- layer
- phosphor ceramic
- bonding
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 120
- 238000005304 joining Methods 0.000 title claims abstract description 16
- 239000000919 ceramic Substances 0.000 claims abstract description 151
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 142
- 238000009792 diffusion process Methods 0.000 claims description 23
- 229920005989 resin Polymers 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 17
- 239000010954 inorganic particle Substances 0.000 claims description 10
- 239000011342 resin composition Substances 0.000 claims description 10
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 5
- 239000002923 metal particle Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 175
- 239000000463 material Substances 0.000 description 46
- 239000002585 base Substances 0.000 description 38
- 239000000203 mixture Substances 0.000 description 37
- 238000002360 preparation method Methods 0.000 description 29
- 238000000034 method Methods 0.000 description 19
- 229920002050 silicone resin Polymers 0.000 description 19
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 18
- 238000005520 cutting process Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 13
- 239000007788 liquid Substances 0.000 description 13
- 239000000976 ink Substances 0.000 description 12
- 238000002156 mixing Methods 0.000 description 12
- -1 polysiloxane Polymers 0.000 description 12
- 239000011230 binding agent Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 238000007259 addition reaction Methods 0.000 description 10
- 238000010304 firing Methods 0.000 description 10
- 230000017525 heat dissipation Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 230000005284 excitation Effects 0.000 description 9
- 229910002113 barium titanate Inorganic materials 0.000 description 8
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 8
- 239000004408 titanium dioxide Substances 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 238000001723 curing Methods 0.000 description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 238000007790 scraping Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 4
- 229920002554 vinyl polymer Polymers 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000001354 calcination Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000003431 cross linking reagent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 235000019353 potassium silicate Nutrition 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000001931 thermography Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229920006310 Asahi-Kasei Polymers 0.000 description 1
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 1
- 241001050985 Disco Species 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- RJUFJBKOKNCXHH-UHFFFAOYSA-N Methyl propionate Chemical compound CCC(=O)OC RJUFJBKOKNCXHH-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229920004482 WACKER® Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- FZTPSPNAZCIDGO-UHFFFAOYSA-N barium(2+);silicate Chemical compound [Ba+2].[Ba+2].[O-][Si]([O-])([O-])[O-] FZTPSPNAZCIDGO-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 229940017219 methyl propionate Drugs 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000009823 thermal lamination Methods 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000003232 water-soluble binding agent Substances 0.000 description 1
- 239000012463 white pigment Substances 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/61—Additives non-macromolecular inorganic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
- C04B35/505—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds based on yttrium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
- C09D1/02—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances alkali metal silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
- C09K5/14—Solid materials, e.g. powdery or granular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0806—Silver
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2237—Oxides; Hydroxides of metals of titanium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2237—Oxides; Hydroxides of metals of titanium
- C08K2003/2241—Titanium dioxide
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Definitions
- the present invention relates to a wavelength conversion bonding member, a wavelength conversion heat radiating member, and a light emitting device, and more particularly to a wavelength conversion bonding member, a wavelength conversion heat radiating member including the wavelength conversion bonding member, and a light emitting device including the wavelength conversion heat radiating member.
- Such a semiconductor light emitting device includes an optical semiconductor that emits excitation light, a wavelength conversion member that converts excitation light into white light, and a reflecting mirror that reflects white light in a target direction.
- the following light emitting device has been proposed (see, for example, Patent Document 1). That is, an excitation light source that emits excitation light forward, a light emitting unit that is disposed in front of the excitation light source with an interval therebetween, and that is disposed between the excitation light source and the light emission unit, and that converts the excitation light into white light.
- a light-emitting device including a cup-shaped reflecting mirror that reflects white light diffusely emitted from the front.
- the gap layer contains an inorganic amorphous material, heat generated in the light-emitting portion can be efficiently conducted to the heat conduction member through the gap layer, so that heat dissipation is excellent. ing.
- An object of the present invention is to provide a wavelength conversion joint member, a wavelength conversion heat dissipation member, and a light emitting device that have excellent heat dissipation and reflectance.
- the wavelength conversion bonding member of the present invention includes a phosphor ceramic element and a bonding layer provided on one surface of the phosphor ceramic element, and the thermal conductivity of the bonding layer exceeds 0.20 W / m ⁇ K. And the reflectance of the said joining layer is 90% or more, It is characterized by the above-mentioned.
- the bonding layer is formed from a ceramic ink.
- the bonding layer may be formed from a curable resin composition containing at least one inorganic particle of inorganic oxide particles and metal particles, and a curable resin. Is preferred.
- the bonding layer has a thickness of 80 ⁇ m or more and 1000 ⁇ m or less.
- the wavelength conversion heat radiating member of the present invention comprises the above-described wavelength conversion bonding member and a heat diffusion holding member, and the heat diffusion holding member is bonded to the phosphor ceramic element through the bonding layer. It is characterized by. *
- the light-emitting device of the present invention includes a light source that irradiates light on one side, a reflecting mirror that is disposed opposite to the light source at a distance from the light source, and has a through-hole through which the light passes, and the light Is provided with the wavelength conversion heat dissipating member disposed opposite to the reflecting mirror on one side so as to irradiate the phosphor ceramic element.
- the wave wavelength conversion bonding member, the wavelength conversion heat radiating member, and the light emitting device of the present invention include a phosphor ceramic element and a bonding layer provided on one surface of the phosphor ceramic element, and the thermal conductivity of the bonding layer is 0. 20W / m ⁇ K is exceeded. Therefore, heat generated in the phosphor ceramic element can be efficiently conducted through the bonding layer, and heat dissipation is excellent.
- the reflectance of the bonding layer is 90% or more. Therefore, absorption of the light diffused and emitted by the phosphor ceramic element can be suppressed and the light can be reflected with high efficiency. As a result, the light extraction efficiency can be improved.
- FIG. 1 shows a side sectional view of an embodiment of a light emitting device of the present invention.
- 2A to 2B show a wavelength conversion heat radiating member in the light emitting device shown in FIG. 1, FIG. 2A is a side sectional view, and FIG. 2B is a rear view.
- 3A to 3E are process diagrams showing a method of manufacturing an embodiment of the wavelength conversion heat radiating member of the present invention.
- FIG. 3A is a process of preparing a green sheet
- FIG. 3B is a process of firing the green sheet.
- FIG. 3C is a step of providing the bonding layer on the phosphor ceramic layer
- FIG. 3D is a step of cutting the wavelength conversion bonding sheet
- FIG. 3E is a step of providing the wavelength conversion bonding member on the heat diffusion holding member.
- Show. 4A to 4B show another embodiment of the wavelength conversion heat radiating member of the present invention (the bonding layer has a U-shaped cross section), FIG. 4A is a side sectional view, and FIG. 4B is a rear view.
- FIG. 5A to FIG. 5I are process diagrams of a first manufacturing method for manufacturing another embodiment of the wavelength conversion heat radiating member of the present invention (the bonding layer has a U-shaped cross section).
- 5B is a step of firing the green sheet
- FIG. 5C is a step of disposing the phosphor ceramic layer on the substrate
- FIG. 5D is a step of scraping a part of the phosphor ceramic layer
- FIG. 5E is a step of providing the wavelength conversion bonding member on the heat diffusion holding member.
- Show. 4A to 4B show another embodiment of the wavelength conversion heat radiating member of the present invention (the bonding layer has a U-shaped cross
- FIG. 5F is a step of forming a curable layer
- FIG. 5G is a step of forming a bonding layer
- FIG. 5H is a step of cutting the bonding layer and the substrate
- FIG. The process of obtaining the wavelength conversion joining member is shown.
- FIG. 6 shows a plan view of the process of FIG. 5E. 7F to 7J are process diagrams of a second manufacturing method for manufacturing another embodiment of the wavelength conversion heat radiating member of the present invention (the bonding layer has a U-shaped cross section).
- FIG. FIG. 7G shows a step of burying the phosphor ceramic element in the curable layer
- FIG. 7H shows a step of curing the curable layer
- FIG. 7I shows a bonding layer and a substrate.
- FIG. 7J shows the step of obtaining the wavelength conversion bonding member.
- FIG. 8 shows a side sectional view of another embodiment of the wavelength conversion heat radiating member of the present invention (the heat diffusion holding member has a comb shape in cross section).
- FIGS. 1 to 2B An embodiment of a light emitting device of the present invention will be described with reference to FIGS. 1 to 2B.
- the vertical direction in FIG. 1 is the “vertical direction” (first direction), the upper side is the upper side, and the lower side is the lower side.
- 1 is the “front-rear direction” (second direction, direction orthogonal to the first direction), the right direction on the paper is the front side, and the left direction on the paper in FIG. 1 is the rear side.
- the paper thickness direction in FIG. 1 is the “width direction” (the third direction, the left-right direction, the direction orthogonal to the first direction and the second direction), and the front side of the paper thickness in FIG. The depth side is the right side.
- a semiconductor light emitting device 1 as a light emitting device includes a housing 2, a transparent member 3, a light source 4, a reflecting mirror 5, and a wavelength conversion heat radiating member 6.
- the housing 2 is formed in a substantially cylindrical shape extending in the front-rear direction, closed on the rear side, and opened on the front side.
- the housing 2 accommodates a transparent member 3, a light source 4, a reflecting mirror 5, and a wavelength conversion heat radiating member 6 described later.
- the transparent member 3 has a substantially circular shape when viewed from the back, and is formed in a flat plate shape with a thin thickness in the front-rear direction.
- the outer shape of the transparent member 3 is formed so as to coincide with the inner peripheral edge at the front end of the housing 2 when projected in the front-rear direction.
- the transparent member 3 is provided at the front end of the housing 2. Specifically, the transparent member 3 is accommodated in the housing 2 such that the front end edge of the housing 2 is flush with the front surface (front surface) of the transparent member 3 in the vertical direction.
- Examples of the light source 4 include a semiconductor light source such as a light emitting diode (LED) and a semiconductor laser (LD).
- the light source 4 is provided at a substantially central portion in the vertical direction and the width direction inside the housing 2 with a space behind the transparent member 3.
- a wiring 8 routed from the outside of the housing 2 is connected to the light source 4.
- the light source 4 emits light such as monochromatic light toward the front side by the power received from the wiring 8.
- the reflecting mirror 5 is formed in a dome shape having a substantially circular shape in a rear view and a substantially semicircular arc shape in a side sectional view.
- the outer shape of the reflecting mirror 5 is formed so as to coincide with the outer edge of the transparent member 3 when projected in the front-rear direction.
- the reflecting mirror 5 is disposed on the other side (rear side) of the transparent member 3 and on one side (front side) of the light source 4 with a distance from the light source 4.
- the reflecting mirror 5 is accommodated in the housing 2 so that the front end edge thereof is in contact with the rear surface of the transparent member 3.
- a through-hole 7 for allowing light from the light source 4 to pass through is formed at the center of the reflecting mirror 5 (vertical and widthwise centers).
- the reflecting mirror 5 reflects the diffused light that passes through the through hole 7 toward the front side and is diffused toward the rear side by a wavelength conversion heat radiating member 6 (described later).
- the wavelength conversion heat radiating member 6 is provided on the front side in the housing 2. Specifically, it is disposed to face the front side with a gap from the reflecting mirror 5, and is disposed adjacent to the rear surface (rear surface) of the transparent member 3. As shown in FIGS. 2A and 2B, the wavelength conversion heat radiating member 6 includes a heat diffusion holding member 9 and a wavelength conversion bonding member 10.
- the heat diffusion holding member 9 is formed in a substantially rectangular shape in back view extending in the vertical direction, and is disposed adjacent to the transparent member 3. Specifically, the heat diffusion holding member 9 is arranged so that the front surface of the heat diffusion holding member 9 is in contact with the rear surface of the transparent member 3.
- the heat diffusion holding member 9 includes a mounting portion 11 and a fixing portion 12. *
- the mounting portion 11 is formed in a substantially rectangular shape in rear view having a thickness in the front-rear direction.
- the placement unit 11 is disposed such that the front surface of the placement unit 11 is in contact with the substantially central portion of the rear surface of the transparent member 3 in the rear view.
- the fixing portion 12 is formed integrally with the placement portion 11 so as to extend downward from the front lower end of the placement portion 11.
- the fixed portion 12 has a substantially rectangular shape in rear view extending in the vertical direction, and is formed in a flat plate shape whose thickness in the front-rear direction is thinner than that of the placement portion 11.
- the fixing portion 12 is bent rearward so that the upper front surface is in contact with the rear surface of the transparent member 3 and is separated from the transparent member 3 in the middle of the vertical direction.
- One end (lower end) of the fixing portion 12 passes through the reflecting mirror 5 and is fixed to the peripheral surface (inner end edge) of the housing 2.
- the thermal diffusion holding member 9 is made of a material having good thermal conductivity, for example, a thermal conductive metal such as aluminum or copper, or a ceramic material such as AlN.
- the wavelength conversion bonding member 10 is provided on the rear surface of the mounting portion 11.
- the wavelength conversion bonding member 10 includes a bonding layer 14 and a phosphor ceramic element 13.
- the bonding layer 14 has a substantially rectangular shape when viewed from the back, and is formed in a flat plate shape.
- the bonding layer 14 is provided on the rear surface of the mounting portion 11 and the front surface (one surface) of the phosphor ceramic element 13. That is, the bonding layer 14 is disposed between the mounting portion 11 and the phosphor ceramic element 13.
- the bonding layer 14 overlaps with the placement unit 11 when projected in the front-rear direction, and specifically, is formed in the same shape as the placement unit 11 in the rear view.
- the bonding layer 14 is formed from a composition containing an inorganic substance. Preferably, it forms in hardening the curable composition containing an inorganic substance.
- the curable composition examples include a ceramic ink, a curable resin composition containing a curable resin and inorganic particles, and an aqueous silicate solution containing alkali metal silicate and inorganic particles.
- the ceramic ink contains, for example, an inorganic ceramic, a binder such as organopolysiloxane, and a solvent, and is cured (solidified) at a low temperature (for example, 120 to 180 ° C.).
- the inorganic substance in the ceramic ink include white pigments such as silicon dioxide, titanium dioxide, and potassium titanate.
- the solvent include ethers such as butyl diglycol ether and diethylene glycol dibutyl ether. From the viewpoint of dispersibility, the white pigment is preferably surface-treated.
- Ceramic ink Commercially available products can be used as the ceramic ink, and specific examples include ceramic inks (RG type, AN type, UV type, SD type) manufactured by Ein Co., Ltd.
- curable resin contained in the curable resin composition examples include a curable silicone resin, an epoxy resin, and an acrylic resin.
- a curable silicone resin is used.
- curable silicone resin examples include a condensation reaction curable silicone resin and an addition reaction curable silicone resin.
- an addition reaction curable silicone resin is used.
- the addition reaction curable silicone resin is composed of, for example, a silicone resin composition containing an ethylenically unsaturated hydrocarbon group-containing polysiloxane as a main agent and an organohydrogensiloxane as a crosslinking agent.
- the addition reaction curable silicone resin is usually provided as two liquids, liquid A containing a main agent (ethylenically unsaturated hydrocarbon group-containing polysiloxane) and liquid B containing a crosslinking agent (organohydrogensiloxane).
- the addition reaction curable silicone resin is cured to form a silicone elastomer (cured body).
- the inorganic substance constituting the inorganic particles include inorganic oxides such as silicon dioxide, titanium dioxide, aluminum oxide, zirconium oxide, and titanic acid complex oxides (eg, barium titanate and potassium titanate), such as silver and aluminum. And the like. From the viewpoint of light reflectivity and heat dissipation, preferably, titanium dioxide, aluminum oxide, zirconium oxide, barium titanate, and silver are mentioned. From the viewpoint of long-term heat resistance, more preferably, titanium dioxide, aluminum oxide, and zirconium oxide. And barium titanate are preferable, and titanium dioxide and aluminum oxide are more preferable.
- inorganic oxides such as silicon dioxide, titanium dioxide, aluminum oxide, zirconium oxide, and titanic acid complex oxides (eg, barium titanate and potassium titanate), such as silver and aluminum. And the like. From the viewpoint of light reflectivity and heat dissipation, preferably, titanium dioxide, aluminum oxide, zirconium oxide, barium titanate, and silver are mentioned. From the viewpoint of long-term heat
- the average particle diameter (average maximum length) of the inorganic particles is, for example, 0.1 to 50 ⁇ m.
- the curable resin composition preferably contains inorganic particles composed of at least one selected from the group consisting of titanium dioxide, aluminum oxide, zirconium oxide, barium titanate and silver, and a curable silicone resin. And more preferably inorganic particles composed of at least one selected from the group consisting of titanium dioxide, aluminum oxide, zirconium oxide and barium titanate, and a curable silicone resin.
- the curable resin composition containing is mentioned, More preferably, the inorganic particle comprised from at least 1 sort (s) of titanium dioxide and aluminum oxide, and the curable resin composition containing a curable silicone resin are mentioned.
- Examples of the alkali metal silicate contained in the silicate aqueous solution include sodium silicate (water glass).
- the content (solid content) of the inorganic substance in the curable composition is, for example, 30% by mass or more, preferably 40% by mass or more, more preferably 60% by mass or more, for example, 90% by mass or less, preferably 80% by mass or less.
- the content ratio (solid content) of the binder or curable resin in the curable composition is, for example, 10% by mass or more, preferably 20% by mass or more, for example, 70% by mass or less, preferably 60% by mass or less. More preferably, it is 40% by mass or less.
- the curable composition is preferably a ceramic ink; a curable resin composition containing at least one inorganic particle of inorganic oxide particles and metal particles and a curable resin, more preferably a ceramic ink; A curable resin composition containing inorganic oxide particles and a curable resin is exemplified, and ceramic ink is more preferable. Thereby, the heat dissipation and reflectivity of the bonding layer 14 can be improved.
- the bonding layer 14 serves as a heat dissipation layer that efficiently conducts heat generated in the phosphor ceramic element 13 to the heat diffusion holding member, and efficiently reflects light incident / diffused to the phosphor ceramic element 13 to the rear side. And a role as a reflective layer.
- the thermal conductivity of the bonding layer 14 exceeds 0.20 W / m ⁇ K, preferably 1.0 W / m ⁇ K or more, more preferably 3.0 W / m ⁇ K or more. 30.0 W / m ⁇ K or less.
- Thermal conductivity can be measured with a Xe flash analyzer.
- the reflectance of the bonding layer 14 is 90% or more, preferably 93% or more, more preferably 96% or more, and for example, 100% or less.
- the reflectance is determined by measuring the reflection of light having a wavelength of 450 nm using an ultraviolet-visible spectrophotometer (“V670”, manufactured by JASCO Corporation).
- the phosphor ceramic element 13 has a substantially rectangular shape when viewed from the back, and is formed in a flat plate shape.
- the phosphor ceramic element 13 is provided on the rear surface of the bonding layer 14.
- the phosphor ceramic element 13 overlaps with the bonding layer 14 and the mounting portion 11 when projected in the front-rear direction. Specifically, in the rear view, the phosphor ceramic element 13 has the same shape as the bonding layer 14 and the mounting portion 11. Is formed.
- the phosphor ceramic element 13 is arranged so as to be collinear with the light source 4 and the through hole 7. Specifically, the light source 4, the through hole 7, and the phosphor ceramic element 13 are accommodated in the housing 2 so as to be aligned on a straight line that coincides with the axis of the housing 2.
- the phosphor ceramic element 13 is formed from a ceramic (fired body) of phosphor material.
- the phosphor contained in the phosphor ceramic element 13 has a wavelength conversion function, for example, a yellow phosphor capable of converting blue light into yellow light, and can convert blue light into red light. Examples include red phosphors.
- yellow phosphor examples include silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)), for example, Y 3 Al Garnet-type phosphors having a garnet-type crystal structure such as 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb 3 Al 3 O 12 : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca- ⁇ -SiAlON. Examples of the red phosphor include nitride phosphors such as CaAlSiN 3 : Eu and CaSiN 2 : Eu.
- silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)
- the method of manufacturing the wavelength conversion heat radiating member 6 includes a step of preparing the green sheet 22, a step of firing the green sheet 22, a step of providing the bonding layer 14 on the phosphor ceramic layer 23, and a step of cutting the wavelength conversion bonding sheet 21. And a step of providing the wavelength conversion bonding member 10 on the heat diffusion holding member 9.
- a green sheet 22 is prepared (preparation process).
- the green sheet 22 is formed, for example, by applying and drying a slurry containing a phosphor material, a binder resin, and a solvent on the upper surface of the release sheet 28.
- the phosphor material is a raw material that constitutes the above-described phosphor, and includes, for example, aluminum oxide, yttrium oxide, cerium oxide, zirconium oxide, titanium oxide, and those obtained by activating other elements. It is prepared by selecting appropriately.
- a known binder resin used for producing the green sheet 22 may be used, and examples thereof include an acrylic polymer, a butyral polymer, a vinyl polymer, and a urethane polymer.
- an acrylic polymer is used.
- the content ratio of the binder resin is, for example, 5% by volume or more, preferably 20% by volume or more, and 80% by volume or less, preferably 60% with respect to the total volume of the phosphor material and the binder resin. % By volume or less.
- the solvent examples include water and organic solvents such as acetone, methyl ethyl ketone, methanol, ethanol, toluene, methyl propionate, and methyl cellosolve.
- the content ratio of the solvent is, for example, 1 to 30% by mass in the slurry.
- the slurry can contain known additives such as a dispersant, a plasticizer, and a sintering aid, if necessary.
- the slurry is applied to the upper surface of the release sheet 28 by a known application method such as a doctor blade, a gravure coater, a fountain coater, a cast coater, a spin coater, or a roll coater, and dried to form the green sheet 22.
- a known application method such as a doctor blade, a gravure coater, a fountain coater, a cast coater, a spin coater, or a roll coater, and dried to form the green sheet 22.
- a polyester film such as a polyethylene terephthalate (PET) film, for example, a polycarbonate film, for example, a polyolefin film such as a polyethylene film or a polypropylene film, for example, a polystyrene film, for example, an acrylic film, for example, silicone
- PET polyethylene terephthalate
- the resin film include resin films and fluororesin films.
- metal foils such as copper foil and stainless steel foil, are also mentioned, for example.
- a resin film is preferable, and a polyester film is more preferable.
- the surface of the release sheet 28 is subjected to release treatment as necessary in order to improve the release property.
- the thickness of the release sheet 28 is, for example, 10 to 200 ⁇ m from the viewpoint of handling properties and cost.
- the green sheet 22 obtained in this way is a pre-sintered ceramic of the phosphor ceramic layer 23 (phosphor ceramic plate), and is formed in a flat plate shape having a substantially rectangular shape in plan view.
- the green sheet 22 can also be formed by laminating a plurality (multiple layers) of green sheets 22 by thermal lamination.
- the thickness of the green sheet 22 is, for example, 10 ⁇ m or more, preferably 30 ⁇ m or more, and for example, 500 ⁇ m or less, preferably 200 ⁇ m or less.
- the green sheet 22 is fired (firing step). Thereby, the phosphor ceramic layer 23 (phosphor ceramic plate) is obtained.
- Calcination temperature is, for example, 1300 ° C. or higher, preferably 1500 ° C. or higher, and for example, 2000 ° C. or lower, preferably 1800 ° C. or lower.
- Calcination time is, for example, 1 hour or more, preferably 2 hours or more, and for example, 24 hours or less, preferably 5 hours or less.
- Calcination may be performed under normal pressure, or may be performed under reduced pressure or under vacuum. Preferably, it is carried out under reduced pressure or under vacuum.
- preheating is performed in the air at, for example, 600 to 1300 ° C. using an electric furnace to remove the binder. Processing may be performed.
- the rate of temperature increase in the firing is, for example, 0.5 to 20 ° C./min.
- the phosphor ceramic layer 23 thus obtained is formed in a flat plate shape having a substantially rectangular shape in plan view.
- the thickness of the phosphor ceramic layer 23 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 500 ⁇ m or less, preferably 200 ⁇ m or less.
- the bonding layer 14 is provided on the phosphor ceramic layer 23 (bonding layer forming step).
- a curable composition containing an inorganic substance is applied to the surface of the phosphor ceramic layer 23 by a known method to form a curable layer on the surface of the phosphor ceramic layer 23.
- the bonding layer 14 is formed by curing (solidifying) the curable layer by heating or the like.
- Examples of the coating method of the curable composition include known coating methods such as a doctor blade, a gravure coater, a fountain coater, a cast coater, a spin coater, and a roll coater.
- the heating temperature for curing the curable layer is, for example, 100 ° C. or more, preferably 120 ° C. or more, and for example, 200 ° C. or less, preferably 180 ° C. or less.
- the heating time is, for example, 0.5 hours or more, preferably 1 hour or more, and for example, 12 hours or less, preferably 6 hours or less.
- a drying step of drying the curable layer can be performed, for example, under conditions of 50 to 100 ° C. and 1 to 10 hours before heat curing.
- the bonding layer (bonding sheet) 14 is formed. That is, the wavelength conversion bonding sheet 21 including the phosphor ceramic layer 23 and the bonding layer 14 provided on the upper surface of the phosphor ceramic layer 23 is obtained.
- the thickness T of the bonding layer 14 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, more preferably 80 ⁇ m or more, still more preferably 90 ⁇ m or more, and for example, 1000 ⁇ m or less, preferably 500 ⁇ m or less, more preferably. Is 200 ⁇ m or less, more preferably 115 ⁇ m or less. By setting it in this range, the thermal conductivity and reflectance of the bonding layer 14 are further improved.
- the wavelength conversion bonding sheet 21 is cut in the vertical direction. Specifically, the wavelength conversion bonding sheet 21 is cut in the vertical direction (thickness direction) so as to have a desired width direction length and a desired length in the front-rear direction (in FIG. 3C, the length in the paper thickness direction). Process (cutting process).
- the cutting process is performed by a known cutting device such as a dicing device, a scribing device, or a laser cutting device.
- the phosphor ceramic layer 23 is cut into a desired size, and the phosphor ceramic element 13 is obtained. That is, as shown in FIG. 3D, the wavelength conversion bonding member 10 including the phosphor ceramic element 13 and the bonding layer 14 provided on the upper surface of the phosphor ceramic element 13 is obtained.
- the length in the width direction of the phosphor ceramic element 13 is, for example, 0.2 mm or more, preferably 1 mm or more, and for example, 10 mm or less, preferably 3 mm or less.
- the longitudinal length of the phosphor ceramic element 13 is, for example, 0.05 mm or more, preferably 0.1 mm or more, and for example, 5 mm or less, preferably 3 mm or less.
- the width direction length and the front-rear direction length of the bonding layer 14 are also the same as the width direction length and the front-rear direction length of the phosphor ceramic element 13.
- a heat diffusion holding member 9 is provided on the wavelength conversion bonding member 10. Specifically, the bonding layer 14 of the wavelength conversion bonding member 10 is bonded to the mounting portion 11 of the heat diffusion holding member 9 through a heat conductive adhesive layer (not shown).
- the heat conductive adhesive forming the heat conductive adhesive layer only needs to have heat conductivity, and its heat conductivity is, for example, 1 to 20 W / m ⁇ k.
- the thickness of the heat conductive adhesive layer is, for example, 5 to 100 ⁇ m.
- the wavelength conversion heat radiating member 6 shown in FIG. 3E is fixed to the housing 2 and the transparent member 3.
- the light emitting device 1 is obtained.
- the semiconductor light emitting device 1 includes a wavelength converting radiation member 6 of the present invention
- the light h 0 emitted from the light source 4 passes through the through hole 7, is wavelength-converted into white light by the phosphor ceramic element 13 At the same time, it is diffused in all directions.
- the reflectance of the bonding layer 14 disposed adjacent to the phosphor ceramic element 13 is 90% or more, the diffused white light can be efficiently reflected to the reflecting mirror 5 side (rear side). (See light h 1 to h 4 in FIG. 1). That is, it is possible to reflect to the reflecting mirror 5 side with high efficiency while reducing the loss of light quantity in the wavelength conversion heat radiating member 6. For this reason, the extraction efficiency of light emitted to the front side (and eventually to the outside) by the reflecting mirror 5 is improved.
- the thermal conductivity of the bonding layer 14 exceeds 0.20 W / m ⁇ K
- the heat generated in the phosphor ceramic element 13 can be efficiently conducted to the thermal diffusion holding member 9 through the bonding layer 14. it can. Therefore, it is excellent in heat dissipation.
- the phosphor ceramic element 13 for converting the wavelength of light is made of phosphor ceramic, it has excellent heat resistance and heat dissipation.
- the semiconductor light-emitting device 1 can be suitably used for far-field illumination applications such as in-vehicle lamps, high ceiling hanging lamps, road lamps, and entertainment lamps.
- the bonding layer 14 has a substantially rectangular shape when viewed from the back, and is formed in a flat plate shape.
- the bonding layer 14 may have a substantially rectangular shape, and may be formed in a U shape that opens the rear side in a cross-sectional view.
- 4A and 4B (a U-shaped cross section) includes a bottom portion 15 that is formed in a flat plate shape that is substantially rectangular when viewed from the back, and a frame portion 16 that protrudes rearward from the peripheral edge of the bottom portion 15. And.
- the thickness T of the bottom portion 15 is the same as the thickness T of the bonding layer 14 shown in FIG. 3D.
- the width W of the frame portion 16 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 500 ⁇ m or less, preferably 200 ⁇ m or less.
- the phosphor ceramic element 13 is formed to be the same as the inner edge of the frame portion 16, and is accommodated in the bonding layer 14a. That is, the rear surface of the phosphor ceramic element 13 is disposed so as to be flush with the rear end edge of the frame portion 16, and the front surface of the phosphor ceramic element 13 is disposed so as to coincide with the rear surface of the bottom portion 15. . As a result, the front surface of the phosphor ceramic element 13 is covered with the bottom portion 15, the peripheral side surface of the phosphor ceramic element 13 is covered with the frame portion 16, and the rear surface of the phosphor ceramic element 13 is exposed from the bonding layer 14a.
- FIGS. 4A and 4B it is possible to suppress the spread of white light that is irradiated to the phosphor ceramic element 13 and reflected / diffused. That is, since the frame portion 16 is provided, the white light reflected and diffused by the phosphor ceramic element 13 is suppressed from diffusing upward and downward. Specifically, the light h 1 shown in FIG. 1 is not emitted from the wavelength conversion heat radiating member 6 in FIG. 4A, but the light in the range indicated by the lights h 2 to h 4 and the like is emitted. For this reason, the spread of the light reflected to the front side can be limited, and the light extraction efficiency in a specific range in the front side direction is improved.
- FIGS. 4A and 4B The manufacturing method of the embodiment of FIGS. 4A and 4B will be described with reference to FIGS. 5A to 5I.
- the method of manufacturing the wavelength conversion heat radiating member 6 includes a step of preparing the green sheet 22, a step of firing the green sheet 22, a step of arranging the phosphor ceramic layer 23 on the substrate 24, and a phosphor ceramic layer.
- a step of scraping a part of 23 a step of obtaining the phosphor ceramic element 13, a step of forming the curable layer 26, a step of curing the curable layer 26, a step of cutting the bonding layer 14 and the substrate 24, wavelength conversion
- a step of obtaining the bonding member 10 and a step of providing the wavelength conversion bonding member 10 on the heat diffusion holding member 9 are provided.
- a green sheet 22 is prepared as shown in FIG. 5A (preparation process).
- the green sheet 22 is fired (firing step) as shown in FIG. 5B.
- the phosphor ceramic layer 23 is disposed on the base material 24 (arrangement step). Specifically, the phosphor ceramic layer 23 is disposed at a substantially central portion on the upper surface of the substrate 24.
- the base material 24 is preferably an easily peelable sheet from the viewpoint of scraping of a blade (described later) and releasability of the base material 24 with respect to the wavelength conversion bonding member 10.
- the easily peelable sheet is formed from, for example, a heat peelable sheet that can be easily peeled off by heating or the like.
- the heat release sheet includes a support layer and an adhesive layer laminated on the upper surface of the support layer.
- the support layer is made of a heat resistant resin such as polyester.
- the pressure-sensitive adhesive layer is formed of, for example, a thermally expandable pressure-sensitive adhesive that has adhesiveness at room temperature (25 ° C.) and that reduces (or loses) adhesiveness when heated.
- thermo release sheet Commercially available products can be used as the thermal release sheet, and specifically, Riva Alpha series (registered trademark, manufactured by Nitto Denko Corporation) can be used.
- the heat-peeling sheet has a wavelength based on a decrease in adhesiveness of the adhesive layer due to heating, while the support layer reliably supports the phosphor ceramic layer 23 (and thus the wavelength conversion bonding member 10) via the adhesive layer. It peels from the conversion joining member 10.
- the substrate 24 is made of, for example, a polyolefin (specifically, polyethylene, polypropylene), a vinyl polymer such as ethylene / vinyl acetate copolymer (EVA), for example, a polyester such as polyethylene terephthalate or polycarbonate, for example, poly You may form from resin materials, such as fluororesins, such as tetrafluoroethylene.
- the base material can also be formed from, for example, a metal material such as iron, aluminum, and stainless steel.
- the thickness of the substrate 24 is, for example, 10 to 1000 ⁇ m.
- a part of the phosphor ceramic layer 23 is removed (removal step). Specifically, a part of the phosphor ceramic layer 23 is scraped off using a blade such as a dicing blade 30.
- the dicing blade 30 is a disk-shaped rotary blade used in a known or commercially available dicing apparatus.
- the tip (lower end) of the dicing blade 30 has a substantially rectangular shape extending in the vertical direction (the thickness direction of the phosphor ceramic layer 23) when projected in a direction along the cutting direction (the front-back direction, which is the paper thickness direction in FIG. 5D). It is formed in a shape (plate shape). That is, the cut surface is formed in a substantially rectangular shape.
- the width direction length X at the tip of the dicing blade 30 is, for example, 0.05 mm or more, preferably 0.1 mm or more, for example, 2.0 mm or less, preferably 1.0 mm or less.
- the ceramic laminate 29 is disposed in the dicing apparatus so that the cutting direction is the front-rear direction. Subsequently, the dicing blade 30 or the ceramic laminate 29 is arranged so that the tip (lower end) of the dicing blade 30 is in contact with the phosphor ceramic layer 23 and does not penetrate the base material 24 when the dicing blade 30 is moved. adjust. That is, the vertical position of the dicing blade 30 or the ceramic laminate 29 is adjusted so that the tip of the dicing blade 30 reaches the upper surface of the substrate 24 and does not reach the lower surface of the substrate 24. Subsequently, the dicing blade 30 is moved in the front-rear direction along the cutting direction while rotating at high speed.
- the portion of the phosphor ceramic layer 23 that comes into contact with the dicing blade 30 is scraped off from the base material 24 along the front-rear direction. That is, the phosphor ceramic layer 23 is scraped off into a substantially rectangular shape. In the scraped portion, the upper surface of the substrate 24 is exposed.
- the scraping in the front-rear direction is repeatedly performed at a desired interval (that is, the desired length in the width direction of the phosphor ceramic element 13) as indicated by a virtual line in FIG. 5D.
- the phosphor ceramic layer 23 is scraped off in a lattice shape.
- an element arrangement base 31 including a base 24 and a plurality of phosphor ceramic elements 13 arranged in a grid on the upper surface of the base 24 is obtained.
- the phosphor ceramic layer 23 is fixed and the dicing blade 30 is moved to scrape a part of the phosphor ceramic layer 23.
- the position of the dicing blade 30 that rotates at high speed is removed. It is also possible to scrape part of the phosphor ceramic layer 23 by fixing and moving the ceramic laminate 29 in the front-rear direction or the width direction with respect to the dicing blade 30 by an XY stage or the like.
- Each of the phosphor ceramic elements 13 is formed in a substantially rectangular shape in a sectional view and a substantially rectangular shape in a plan view.
- the length Y in the width direction and the length in the front-rear direction of the phosphor ceramic element 13 are the same as in the embodiment of FIGS. 2A and 2B.
- the interval in the width direction and the interval in the front-rear direction of the plurality of phosphor ceramic elements 13 are the same as the length X in the width direction of the tip of the dicing blade 30.
- the bonding layer 14 is formed on the base material 24 so as to cover the surface of the phosphor ceramic element 13 (formation step).
- a curable composition containing an inorganic substance is applied onto the base material 24 by a known method so as to cover the upper surface and side surfaces of the phosphor ceramic element 13, and cured.
- the curable layer 26 is formed (curable layer forming step).
- Examples of the application method of the curable composition include known application methods such as printing and dispenser.
- the bonding layer 14 is formed (bonding layer forming step). Specifically, in the same manner as in FIG. 3C, the bonding layer 14 is formed by curing (solidifying) the curable layer 26 by heating.
- the base material 24, the plurality of phosphor ceramic elements 13 arranged in alignment on the base material 24, and the top surface and side surfaces of the plurality of phosphor ceramic elements 13 are covered on the base material 24.
- a bonding layer-element stack 33 including the formed bonding layer 14 is obtained.
- the bonding layer 14 and the base material 24 are cut in the vertical direction so as to include one phosphor ceramic element 13 (cutting step). That is, the phosphor ceramic element 13 is cut into a plurality of phosphor ceramic elements 13 and separated (individualized).
- the bonding layer 14 and the substrate 24 are formed using the narrow blade 39 along the vertical direction (bonding layer-the thickness direction of the element stack 33). And cut by dicing.
- the narrow blade 39 is a blade having a narrower width than the dicing blade 30 and is a disk-shaped rotary blade used in the dicing apparatus.
- the narrow blade 39 is formed in a substantially rectangular shape (plate shape) extending in the vertical direction when projected in a direction along the cutting direction (in FIG. 5H, the front-back direction which is the paper thickness direction).
- the width direction length Z of the narrow blade 39 is narrower than the width direction length X of the dicing blade 30, for example, 80% or less of X, preferably 60% or less, and for example, 10% or more, Preferably, it is 30% or more. Specifically, it is 0.01 mm or more, for example, Preferably, it is 0.05 mm or more, for example, is 1.5 mm or less, Preferably, it is 0.8 mm or less.
- the bonding layer-element stack 33 is placed in a dicing apparatus. Subsequently, the arrangement of the narrow blade 39 or the bonding layer-element stack 33 is adjusted so that the bonding layer 14 and the base material 24 are cut in the vertical direction. That is, the vertical position of the narrow blade 39 or the bonding layer-element stack 33 is adjusted so that the tip of the narrow blade 39 penetrates the bonding layer 14 and reaches the lower surface of the substrate 24.
- the narrow blade 39 is rotated at a high speed, it is moved between the phosphor ceramic elements 13 adjacent to each other in the front-rear direction and the width direction (that is, in a lattice shape), and the bonding layer 14 and the base material 24 are cut.
- the wavelength conversion bonding member 10 is obtained. Specifically, a base material laminate including a base material 24 and a wavelength conversion bonding member 10 provided on the base material 24 and having one phosphor ceramic element 13 and a (cross section U-shaped) bonding layer 14a.
- the wavelength conversion joining member 34 is obtained.
- the wavelength conversion bonding member 10 is provided on the thermal diffusion holding member 9 in the same manner as in the step of FIG. 3E.
- 4A and 4B can also be manufactured by the method shown in FIGS. 7F to 7J.
- an element arrangement base 31 including a base 24 and a plurality of phosphor ceramic elements 13 arranged in a lattice on the upper surface of the base 24 is obtained.
- the element arrangement base 31 is arranged opposite to the curable layer 26 (opposing arrangement step).
- a curable layer sheet 38 in which the curable layer 26 is provided on the release sheet 28a is prepared.
- the curable layer sheet 38 is produced by applying a curable composition containing an inorganic substance on the upper surface of the release sheet 28a on the release sheet 28a by a known method.
- the release sheet 28 a is the same as the release sheet 28.
- the thickness of the curable layer 26 is, for example, 80 ⁇ m or more, preferably 90 ⁇ m or more, and for example, 1000 ⁇ m or less, preferably 500 ⁇ m or less.
- the element arrangement base material 31 is arranged to face the curable layer sheet 38 in the vertical direction with an interval so that the phosphor ceramic element 13 faces the curable layer 26.
- the phosphor ceramic element 13 is buried in the curable layer 26 (embedding step). Specifically, the element arrangement base 31 is moved downward and pressed against the curable layer sheet 38.
- the surface (lower surface and side surface) of the phosphor ceramic element 13 is covered with the curable layer 26.
- the surface of the base material 24 exposed from the phosphor ceramic element 13 is covered with the curable layer 26.
- the pressure is, for example, 0.03 MPa or more, preferably 0.1 MPa or more, and for example, 2 MPa or less, preferably 0.5 MPa or less.
- a curable layer-element laminate 32 including the curable layer 26 formed below and the release sheet 28a disposed under the curable layer 26 is obtained.
- step of disposing the element arrangement substrate 31 opposite to the curable layer sheet 38 and the step of burying the phosphor ceramic element 13 in the curable layer 26 can be performed as one continuous step.
- the curable layer 26 is cured (curing step). Specifically, in the same manner as in FIG. 3C, the curable layer-element stack 32 is heated to cure (solidify) the curable layer 26 and form the bonding layer 14.
- the base material 24, the plurality of phosphor ceramic elements 13 arranged under the base material 24, and the bottom surface and side surfaces of the plurality of phosphor ceramic elements 13 are covered under the base material 24.
- a bonding layer-element stack 33 including the formed bonding layer 14 and a release sheet 28a disposed under the bonding layer 14 is obtained.
- the bonding layer 14 and the base material 24 are cut in the vertical direction so as to include one phosphor ceramic element 13 (cutting step). That is, the phosphor ceramic element 13 is cut into a plurality of phosphor ceramic elements 13 and separated (individualized).
- the base 24, the bonding layer 14, and the release sheet 28 a are disposed between the phosphor ceramic elements 13 adjacent to each other using the narrow blade 39 in the vertical direction. And cut by dicing.
- the wavelength conversion bonding member 10 is obtained. Specifically, double-sided laminated wavelength conversion comprising a base material 24, a release sheet 28a, and a wavelength conversion bonding member 10 sandwiched between them and having a phosphor ceramic element 13 and a (cross-sectionally U-shaped) bonding layer 14a. The joining member 34a is obtained.
- the wavelength conversion bonding member 10 is provided on the thermal diffusion holding member 9 in the same manner as in the step of FIG.
- the heat diffusion holding member 9 includes the mounting portion 11 and the fixing portion 12.
- the mounting portion 11 includes the mounting portion 11 and the fixing portion 12.
- a plurality of convex portions 17 can also be provided.
- the mounting portion 11 a is formed in a substantially rectangular shape in back view having a thickness in the front-rear direction, and is larger than the wavelength conversion bonding member 10. Specifically, the mounting portion 11a is formed so as to include the wavelength conversion bonding member 10 when projected in the front-rear direction.
- the plurality of convex portions 17 are formed integrally with the placement portion 11a in order to improve heat dissipation, and are provided so as to protrude forward from the front surface of the placement portion 11a.
- FIG. 8 also has the same effects as the embodiment of FIG. 2A.
- a phosphor comprising 11.34 g of yttrium oxide particles (purity 99.9%, manufactured by Japan Yttrium Co.), 8.577 g of aluminum oxide particles (purity 99.9%, manufactured by Sumitomo Chemical Co., Ltd.), and 0.087 g of cerium oxide particles.
- a powder of material was prepared.
- the prepared slurry was tape-cast by a doctor blade method and dried on a PET film 28 as a release sheet to form a green sheet 22 having a thickness of 75 ⁇ m (see FIG. 3A). Thereafter, the green sheet 22 was peeled from the PET film 28, and the green sheet 22 was cut out to a size of 20 mm ⁇ 20 mm. Two cut green sheets 22 were produced, and the two green sheets 22 were heat-laminated using a hot press to produce a green sheet laminate 22.
- the produced green sheet laminate 22 is heated to 1200 ° C. in the air at a heating rate of 1 ° C./min in an electric muffle furnace, and a binder removal process is performed to decompose and remove organic components such as a binder resin. did. Thereafter, the green sheet laminate 22 is transferred to a high-temperature vacuum furnace and heated to 1750 ° C. at a rate of temperature increase of 5 ° C./min under a reduced pressure of about 10 ⁇ 3 Torr (about 0.13 Pa). By firing, a phosphor ceramic layer 23 (phosphor ceramic plate) made of Y 3 Al 5 O 12 : Ce having a thickness of 120 ⁇ m was produced (see FIG. 3B).
- Preparation example 2 Two-component addition reaction curable silicone resin (trade name “KER2500-A / B”, manufactured by Shin-Etsu Chemical Co., Ltd.) A: B liquid was stirred at a mixing ratio (mass ratio) of 100: 100, and then this mixed liquid By stirring and mixing 2.0 g of silver particles (trade name “AG-404”, manufactured by Nilaco Co., Ltd.) and 3.0 g of silver particles (trade name “SPN08S”, manufactured by Mitsui Mining & Smelting Co., Ltd.) with 5.0 g A curable composition for preparing a bonding layer was prepared.
- Preparation example 3 Two-component addition reaction curable silicone resin (trade name “KER2500-A / B”, manufactured by Shin-Etsu Chemical Co., Ltd.) A: B liquid was stirred at a mixing ratio (mass ratio) of 100: 100, and then mixed liquid 6. A curable composition for preparing a bonding layer was prepared by stirring and mixing 4.0 g of barium titanate particles (“BT-03”, manufactured by Sakai Chemical Industry Co., Ltd.) with 0 g.
- barium titanate particles (“BT-03”, manufactured by Sakai Chemical Industry Co., Ltd.
- Preparation example 4 By stirring and mixing 4.0 g of sodium silicate (water glass) No. 1 (made by Showa Chemical Co., Ltd.) with barium titanate particles (trade name “BT-03”, manufactured by Sakai Chemical Industry Co., Ltd.) A curable composition for preparing a layer was prepared.
- Preparation Example 6 60-100 parts by mass of aluminum oxide particles and curable silicone resin (10-30 parts by mass of silicone resin, 1-5 parts by mass of polyvinyl siloxane, 1-5 parts by mass of vinyl polydimethylsiloxane, 1-5 parts by mass of methyl hydrogen polysiloxane ) (Trade name “IVS7620”, manufactured by Momentive Performance Materials Co., Ltd.) was prepared as a curable composition for preparing a bonding layer.
- curable silicone resin 10-30 parts by mass of silicone resin, 1-5 parts by mass of polyvinyl siloxane, 1-5 parts by mass of vinyl polydimethylsiloxane, 1-5 parts by mass of methyl hydrogen polysiloxane
- Preparation Example 7 A silver paste (trade name “P-1032”, manufactured by Muromachi Technos Co., Ltd.) was prepared as a curable composition for preparing a bonding layer.
- Preparation Example 8 By dissolving 5.0 g of methacrylic resin pellets in 15 g of methyl ethyl ketone and stirring and mixing 5.0 g of barium titanate particles (trade name “BT-03” manufactured by Sakai Chemical Industry Co., Ltd.) A composition was prepared.
- Example 1 (Production of wavelength conversion bonding member) Example 1 Using a doctor blade, the curable composition (ceramic ink) prepared in Preparation Example 1 was applied to one surface of the phosphor ceramic layer 23, and the ceramic ink was dried by heating at 90 ° C. for 5 hours. It hardened
- a wavelength conversion bonding member 10 including the phosphor ceramic element 13 and the bonding layer 14 was manufactured by cutting with a dicing apparatus in a size of 3.0 mm ⁇ 3.0 mm (see FIG. 3D).
- Example 2 A wavelength conversion bonding member was produced in the same manner as in Example 1 except that the thickness of the bonding layer was changed from 100 ⁇ m to 120 ⁇ m.
- Example 3 The wavelength was changed in the same manner as in Example 1 except that the curable composition of Preparation Example 1 was changed to the curable composition of Preparation Example 2, heated and dried at 70 ° C. for 1 hour, and heated and cured at 150 ° C. for 2 hours. A conversion joining member was produced.
- Example 4 The wavelength was changed in the same manner as in Example 1 except that the curable composition of Preparation Example 1 was changed to the curable composition of Preparation Example 3, heated and dried at 70 ° C. for 1 hour, and heated and cured at 150 ° C. for 2 hours. A conversion joining member was produced.
- Example 5 The wavelength was changed in the same manner as in Example 1 except that the curable composition of Preparation Example 1 was changed to the curable composition of Preparation Example 4 and heat-dried at 70 ° C. for 8 hours and heat-cured at 150 ° C. for 2 hours. A conversion joining member was produced.
- Example 6 The wavelength was changed in the same manner as in Example 1 except that the curable composition of Preparation Example 1 was changed to the curable composition of Preparation Example 5, heated and dried at 70 ° C. for 1 hour, and heated and cured at 150 ° C. for 2 hours. A conversion joining member was produced.
- Example 7 The wavelength was changed in the same manner as in Example 1 except that the curable composition of Preparation Example 1 was changed to the curable composition of Preparation Example 6, heated and dried at 100 ° C. for 1 hour, and heated and cured at 150 ° C. for 2 hours. A conversion joining member was produced.
- Comparative Example 1 A wavelength conversion bonding member was produced in the same manner as in Example 1 except that the thickness of the bonding layer was changed from 100 ⁇ m to 75 ⁇ m.
- Comparative Example 2 A wavelength conversion bonding member was produced in the same manner as in Example 4 except that the thickness of the bonding layer was changed from 100 ⁇ m to 75 ⁇ m.
- Comparative Example 3 The wavelength was changed in the same manner as in Example 1 except that the curable composition of Preparation Example 1 was changed to the curable composition of Preparation Example 7, heat-dried at 70 ° C. for 1 hour, and heat-cured at 150 ° C. for 1 hour. A conversion joining member was produced.
- Comparative Example 4 A wavelength conversion bonding member was prepared in the same manner as in Example 1 except that the curable composition of Preparation Example 1 was changed to the curable composition of Preparation Example 8 and heat-dried at 60 ° C. for 2 hours.
- the phosphor ceramic layer 23 is a heat release sheet 24 (base material, product name “Riva Alpha 31950”, manufactured by Nitto Denko Corporation) installed in a dicing frame of a dicing apparatus (product name “Dicing Saw”, manufactured by DISCO).
- the ceramic laminate 29 was obtained by sticking to the adhesive layer surface (upper surface) (see FIG. 5C).
- the vertical position of the dicing blade 30 (tip width X: 0.4 mm) whose tip is substantially rectangular in cross section was adjusted so that the tip of the dicing blade 30 coincided with the upper surface of the thermal release sheet 24.
- the dicing blade 30 is rotated at a high speed, the dicing blade 30 is moved relative to the ceramic laminate 29 so that each of the interval in the width direction (Y) and the interval in the front-rear direction becomes 3.0 mm. A part of the phosphor ceramic layer 23 was scraped off in a lattice shape (see FIG. 5D).
- a plurality of phosphor ceramic elements 13 (3.0 mm ⁇ 3.0 mm) are arranged on the heat release sheet 24 in a grid pattern with an interval of 0.4 mm in the front-rear direction and the width direction.
- the element arrangement substrate 31 was obtained (see FIGS. 5E and 6).
- the curable layer-element laminate 32 was dried at 90 ° C. for 5 hours, and then heat-cured at 150 ° C. for 2 hours to form the bonding layer 14 (thickness 100 ⁇ m). As a result, a bonding layer-element stack 33 was obtained (see FIG. 5G).
- the bonding layer-element stack 33 was placed in the dicing apparatus. Thereafter, using a narrow blade 39 (tip width Z: 0.2 mm) whose tip is substantially rectangular in cross section, the bonding layer 14 and the thermal separation between the center in the width direction and the center in the front-rear direction between the phosphor ceramic elements 13 are performed. It cut
- the heat release sheet 24 was peeled off at 200 ° C. from the obtained base material laminated wavelength conversion bonding member 34.
- one phosphor ceramic element 13 (3.0 mm ⁇ 3.0 mm, thickness 120 ⁇ m) and a bonding layer 14 (3.2 mm ⁇ 3.2 mm, side width W: 0.1 mm, thickness T: 100 ⁇ m) are provided.
- the wavelength conversion joining member 10 was produced (refer FIG. 5I).
- the thermal conductivity of the bonding layer The thermal conductivity of the bonding layer 14 of the wavelength conversion bonding member 10 of each example and each comparative example was measured with a Xe flash analyzer (manufactured by NETZSCH, LFA447) by the following method.
- Thermal conductive grease (trade name “MX-4”, thermal conductivity 8.5 W / m ⁇ K, manufactured by Arctic Cooling) is applied to the surface of the bonding layer 14 of the wavelength conversion bonding member 10 of each example and each comparative example. Then, a heat sink as a heat diffusion holding member 9 having a sufficient size was adhered to the bonding layer 14 through the heat conductive grease layer. Thereby, the wavelength conversion heat radiating member 6 of each Example and each comparative example was manufactured (refer FIG. 3E).
- the wavelength conversion heat radiating member was made to emit light by applying a 1200 mA current to the LD device and irradiating the wavelength conversion heat radiating member of each example and each comparative example with laser light. The maximum temperature of the surface of the phosphor after emitting light for 1 minute from the wavelength conversion heat radiating member was measured by thermography.
- the case of less than 55 ° C. was evaluated as ⁇ , the case of 55 ° C. or more and less than 150 ° C. was evaluated as ⁇ , and the case of 150 ° C. or more was evaluated as ⁇ .
- a reflection mirror of 99% or more was disposed in the wavelength region of the laser wavelength of 440 to 450 nm, and the reflected radiant flux was measured in the same manner.
- the reflected radiant flux Y of the wavelength conversion radiating member relative to the reflected radiant flux X of the reflecting mirror was calculated as a percentage. That is, the case of 85% or more calculated by the formula “(Y / X) ⁇ 100” is evaluated as ⁇ , the case of 75% or more and less than 85% is evaluated as ⁇ , and the case of less than 75% is evaluated. X was evaluated.
- the wavelength conversion joining member, the wavelength conversion heat radiating member, and the light emitting device of the present invention can be applied to various industrial products.
- an in-vehicle lamp, a high ceiling hanging lamp, a road lamp, an entertainment lamp, and the like provided with a semiconductor light emitting device. can be suitably used.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Thermal Sciences (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
以降の各図において、上記した各部に対応する部材については、同一の参照符号を付し、その詳細な説明を省略する。
酸化イットリウム粒子(純度99.9%、日本イットリウム社製)11.34g、酸化アルミニウム粒子(純度99.9%、住友化学社製)8.577g、および、酸化セリウム粒子0.087gからなる蛍光体材料の粉末を調製した。
準備例1
セラミックスインク(商品名「RG12-22」、白色、無機物リッチ、株式会社アイン製)を、接合層作製用の硬化性組成物として準備した。
二液付加反応硬化型シリコーンレジン(商品名「KER2500-A/B」、信越化学工業株式会社製)A:B液を100:100の混合比(質量比)で撹拌し、次いで、この混合液5.0gに、銀粒子(商品名「AG-404」、株式会社ニラコ製)2.0gおよび銀粒子(商品名「SPN08S」、三井金属鉱業株式会社製)3.0gを撹拌混合することにより、接合層作製用の硬化性組成物を調製した。
二液付加反応硬化型シリコーンレジン(商品名「KER2500-A/B」、信越化学工業株式会社製)A:B液を100:100の混合比(質量比)で撹拌し、次いで混合液6.0gに、チタン酸バリウム粒子(「BT-03」、堺化学工業株式会社製)4.0gを撹拌混合することにより、接合層作製用の硬化性組成物を調製した。
珪酸ナトリウム(水ガラス)1号(昭和化学株式会社製)6.0gにチタン酸バリウム粒子(商品名「BT-03」、堺化学工業株式会社製)4.0gを撹拌混合することにより、接合層作製用の硬化性組成物を調製した。
二液付加反応硬化型シリコーンレジン(商品名「KER2500-A/B」、信越化学工業株式会社製)A:B液を100:100の混合比(質量比)で撹拌し、次いで混合液5.0gに、ルチル型二酸化チタン粒子(平均粒子径0.2μm)5.5gを撹拌混合することにより、接合層作製用の硬化性組成物を調製した。
酸化アルミニウム粒子60~100質量部および硬化性シリコーン樹脂(シリコーン樹脂10~30質量部、ポリビニルシロキサン1~5質量部、ビニルポリジメチルシロキサン1~5質量部、メチルハイドロジェンポリシロキサン1~5質量部)を含有した硬化性組成物(商品名「IVS7620」、モーメンティブ・パフォーマンス・マテリアルズ株式会社製)を接合層作製用の硬化性組成物として準備した。
銀ペースト(商品名「P-1032」、ムロマチテクノス株式会社製)を接合層作製用の硬化性組成物として準備した。
メタクリル樹脂ペレット5.0gをメチルエチルケトン15gに溶解し、チタン酸バリウム粒子(商品名「BT-03」、堺化学工業株式会社製)5.0gを撹拌混合することにより、接合層作製用の硬化性組成物を調製した。
実施例1
ドクターブレードを用いて、準備例1で準備した硬化性組成物(セラミックスインク)を蛍光体セラミックス層23の一方面に塗布し、90℃で5時間加熱することによりセラミックスインクを乾燥し、次いで、150℃で2時間加熱することにより、硬化した。これにより、蛍光体セラミックス層23(厚み120μm)と接合層14(厚み100μm)とを備える波長変換接合シート21を得た(図3C参照)。
接合層の厚み100μmを120μmに変更した以外は、実施例1と同様にして、波長変換接合部材を作製した。
準備例1の硬化性組成物を準備例2の硬化性組成物に変更し、70℃で1時間加熱乾燥し、150℃で2時間加熱硬化した以外は、実施例1と同様にして、波長変換接合部材を作製した。
準備例1の硬化性組成物を準備例3の硬化性組成物に変更し、70℃で1時間加熱乾燥し、150℃で2時間加熱硬化した以外は、実施例1と同様にして、波長変換接合部材を作製した。
準備例1の硬化性組成物を準備例4の硬化性組成物に変更し、70℃で8時間加熱乾燥し、150℃で2時間加熱硬化した以外は、実施例1と同様にして、波長変換接合部材を作製した。
準備例1の硬化性組成物を準備例5の硬化性組成物に変更し、70℃で1時間加熱乾燥し、150℃で2時間加熱硬化した以外は、実施例1と同様にして、波長変換接合部材を作製した。
準備例1の硬化性組成物を準備例6の硬化性組成物に変更し、100℃で1時間加熱乾燥し、150℃で2時間加熱硬化した以外は、実施例1と同様にして、波長変換接合部材を作製した。
接合層の厚み100μmを75μmに変更した以外は、実施例1と同様にして、波長変換接合部材を作製した。
接合層の厚み100μmを75μmに変更した以外は、実施例4と同様にして、波長変換接合部材を作製した。
準備例1の硬化性組成物を準備例7の硬化性組成物に変更し、70℃で1時間加熱乾燥し、150℃で1時間加熱硬化した以外は、実施例1と同様にして、波長変換接合部材を作製した。
準備例1の硬化性組成物を準備例8の硬化性組成物に変更し、60℃で2時間加熱乾燥した以外は、実施例1と同様にして、波長変換接合部材を作製した。
蛍光体セラミックス層23を、ダイシング装置(商品名「ダイシングソー」、DISCO社製)のダイシングフレームに設置された熱剥離シート24(基材、商品名「リバアルファ31950」、日東電工社製)の粘着層面(上面)に貼着して、セラミックス積層体29を得た(図5C参照)。
各実施例および各比較例の波長変換接合部材10の接合層14における反射率を、紫外可視分光光度計(「V670」、日本分光社製)にて、波長450nmの条件にて測定した。この結果を表1に示す。
下記の方法によって、各実施例および各比較例の波長変換接合部材10の接合層14の熱伝導率をXeフラッシュアナライザー(NETZSCH社製、LFA447)にて測定した。
各実施例および各比較例の波長変換接合部材10の接合層14の表面に、熱伝導グリース(商品名「MX-4」、熱伝導率8.5W/m・K、Arctic Cooling社製)を塗布し、次いで、熱伝導グリース層を介して、十分なサイズの熱拡散保持部材9としてのヒートシンクを接合層14に接着させた。これにより、各実施例および各比較例の波長変換放熱部材6を製造した(図3E参照)。
1.LD装置を点灯した際の蛍光体の表面温度
(1)光出力が1.6Wの場合
電源(ネオアーク株式会社製)および放熱器に接続したLD装置(商品名「NDB7875」、最大1.6W光出力、日亜化学株式会社製)を用意した。LD装置に1200mA電流を印加して、各実施例および各比較例の波長変換放熱部材にレーザー光を照射することにより、波長変換放熱部材を発光させた。波長変換放熱部材を1分間発光した後の蛍光体の表面の最大温度をサーモグラフィーで測定した。
(2)光出力が4.8Wの場合
上記LD装置を複数個印加して最大4.8Wの光出力となるように調整し、各実施例および各比較例の波長変換放熱部材にレーザー光を照射することにより、波長変換放熱部材を発光させた。波長変換放熱部材を1分間発光した後の蛍光体の表面温度をサーモグラフィーで測定した。
上記1.で作製した各実施例および各比較例の波長変換放熱部材を、側面に細孔が形成された積分球の中心位置に配置した。次いで、積分球の外部より細孔を通して、上記1.(1)(光出力が1.6Wの場合)の条件におけるレーザー光を波長変換放熱部材に照射し、1分間発光させた後の反射放射束を測定した。
85%以上である場合を◎と評価し、75%以上85%未満である場合を○と評価し75%未満である場合を×と評価した。
各実施例および各比較例の波長変換接合部材を、200℃の乾燥炉内に1000時間に設置した後に、接合層の反射率を測定した。初期反射率に対する、乾燥炉内に設置後の反射率の変化を測定した。
4 光源
5 反射鏡
6 波長変換接合部材
7 貫通孔
9 熱拡散保持部材
10 波長変換放熱部材
13 蛍光体セラミックス素子
14 接合層
Claims (6)
- 蛍光体セラミックス素子と、
前記蛍光体セラミックス素子の一方面に設けられる接合層とを備え、
前記接合層の熱伝導率が、0.20W/m・Kを超過し、
前記接合層の反射率が、90%以上である
ことを特徴とする、波長変換接合部材。 - 前記接合層が、セラミックスインクから形成されることを特徴とする、請求項1に記載の波長変換接合部材。
- 前記接合層が、無機酸化物粒子および金属粒子の少なくとも1種の無機粒子、ならびに、硬化性樹脂を含有する硬化性樹脂組成物から形成されることを特徴とする、請求項1に記載の波長変換接合部材。
- 前記接合層の厚みが、80μm以上1000μm以下であることを特徴とする、請求項1に記載の波長変換接合部材。
- 請求項1に記載の波長変換接合部材と、熱拡散保持部材とを備え、
前記熱拡散保持部材は、前記接合層を介して、前記蛍光体セラミックス素子と接合していることを特徴とする、波長変換放熱部材。 - 光を一方側に照射する光源と、
前記光源と間隔を隔てて一方側に対向配置され、前記光が通過するための貫通孔が形成される反射鏡と、
前記光が前記蛍光体セラミックス素子に照射されるように、前記反射鏡と間隔を隔てて一方側に対向配置される請求項5に記載の波長変換放熱部材と
を備える発光装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201580021212.0A CN106233474A (zh) | 2014-04-23 | 2015-04-02 | 波长转换接合构件、波长转换散热构件及发光装置 |
EP15783497.9A EP3136454A4 (en) | 2014-04-23 | 2015-04-02 | Wavelength conversion joining member, wavelength conversion heat-radiating member, and light emission device |
KR1020167029215A KR20160146717A (ko) | 2014-04-23 | 2015-04-02 | 파장 변환 접합 부재, 파장 변환 방열 부재 및 발광 장치 |
US15/303,933 US20170040502A1 (en) | 2014-04-23 | 2015-04-02 | Wavelength conversion bonding member, wavelength conversion heat dissipation member, and light-emitting device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-089568 | 2014-04-23 | ||
JP2014089568 | 2014-04-23 | ||
JP2015-039031 | 2015-02-27 | ||
JP2015039031A JP2015216353A (ja) | 2014-04-23 | 2015-02-27 | 波長変換接合部材、波長変換放熱部材および発光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015163108A1 true WO2015163108A1 (ja) | 2015-10-29 |
Family
ID=54332276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/060516 WO2015163108A1 (ja) | 2014-04-23 | 2015-04-02 | 波長変換接合部材、波長変換放熱部材および発光装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20170040502A1 (ja) |
EP (1) | EP3136454A4 (ja) |
JP (1) | JP2015216353A (ja) |
KR (1) | KR20160146717A (ja) |
CN (1) | CN106233474A (ja) |
TW (1) | TW201542965A (ja) |
WO (1) | WO2015163108A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017090797A (ja) * | 2015-11-16 | 2017-05-25 | 日本電気硝子株式会社 | 波長変換素子の製造方法並びに波長変換素子及び発光装置 |
JP7322306B1 (ja) | 2020-06-25 | 2023-08-07 | シグニファイ ホールディング ビー ヴィ | セラミック蛍光体アレイ |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10120111B2 (en) * | 2016-12-14 | 2018-11-06 | Google Llc | Thin ceramic imaging screen for camera systems |
KR102149988B1 (ko) * | 2018-09-07 | 2020-08-31 | 대주전자재료 주식회사 | 파장 변환 부재 제조용 적층체 및 파장 변환 부재의 제조방법 |
TWI757575B (zh) * | 2019-01-23 | 2022-03-11 | 崇翌科技股份有限公司 | 準分子燈及準分子燈的製造方法 |
KR102495653B1 (ko) * | 2020-06-12 | 2023-02-06 | 주식회사 대신테크젠 | 혼합 충전제를 이용한 고 방열성 조성물 및 이의 제조방법 |
JP7401790B2 (ja) * | 2021-07-21 | 2023-12-20 | 日亜化学工業株式会社 | 波長変換モジュール |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150041A (ja) * | 2003-11-19 | 2005-06-09 | Koito Mfg Co Ltd | 灯具 |
WO2009129068A2 (en) * | 2008-04-14 | 2009-10-22 | Bp Corporation North America Inc. | Thermal conducting materials for solar panel components |
WO2011093454A1 (ja) * | 2010-01-29 | 2011-08-04 | シチズン電子株式会社 | 発光装置の製造方法及び発光装置 |
JP2011198560A (ja) * | 2010-03-18 | 2011-10-06 | Stanley Electric Co Ltd | 車両用灯具 |
JP2012243624A (ja) * | 2011-05-20 | 2012-12-10 | Stanley Electric Co Ltd | 光源装置および照明装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3120122B2 (ja) | 1991-07-16 | 2000-12-25 | 松下電器産業株式会社 | 鉛蓄電池の気密検査方法とその装置 |
US8556437B2 (en) * | 2009-12-17 | 2013-10-15 | Stanley Electric Co., Ltd. | Semiconductor light source apparatus and lighting unit |
GB2477569A (en) * | 2010-02-09 | 2011-08-10 | Sharp Kk | Lamp having a phosphor. |
CN106025053B (zh) * | 2010-03-23 | 2020-01-10 | 株式会社朝日橡胶 | 有机硅树脂制反射基材及其制造方法、以及用于该反射基材的原材料组合物 |
JP2012039013A (ja) * | 2010-08-10 | 2012-02-23 | Citizen Electronics Co Ltd | 発光装置の製造方法 |
US8833975B2 (en) * | 2010-09-07 | 2014-09-16 | Sharp Kabushiki Kaisha | Light-emitting device, illuminating device, vehicle headlamp, and method for producing light-emitting device |
JP2013069547A (ja) * | 2011-09-22 | 2013-04-18 | Stanley Electric Co Ltd | 放熱基板及びその製造方法並びにその放熱基板を用いた光半導体装置 |
JP2013187043A (ja) * | 2012-03-08 | 2013-09-19 | Stanley Electric Co Ltd | 光源装置および照明装置 |
-
2015
- 2015-02-27 JP JP2015039031A patent/JP2015216353A/ja active Pending
- 2015-04-02 US US15/303,933 patent/US20170040502A1/en not_active Abandoned
- 2015-04-02 CN CN201580021212.0A patent/CN106233474A/zh active Pending
- 2015-04-02 WO PCT/JP2015/060516 patent/WO2015163108A1/ja active Application Filing
- 2015-04-02 KR KR1020167029215A patent/KR20160146717A/ko unknown
- 2015-04-02 EP EP15783497.9A patent/EP3136454A4/en not_active Withdrawn
- 2015-04-22 TW TW104112918A patent/TW201542965A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150041A (ja) * | 2003-11-19 | 2005-06-09 | Koito Mfg Co Ltd | 灯具 |
WO2009129068A2 (en) * | 2008-04-14 | 2009-10-22 | Bp Corporation North America Inc. | Thermal conducting materials for solar panel components |
WO2011093454A1 (ja) * | 2010-01-29 | 2011-08-04 | シチズン電子株式会社 | 発光装置の製造方法及び発光装置 |
JP2011198560A (ja) * | 2010-03-18 | 2011-10-06 | Stanley Electric Co Ltd | 車両用灯具 |
JP2012243624A (ja) * | 2011-05-20 | 2012-12-10 | Stanley Electric Co Ltd | 光源装置および照明装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3136454A4 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017090797A (ja) * | 2015-11-16 | 2017-05-25 | 日本電気硝子株式会社 | 波長変換素子の製造方法並びに波長変換素子及び発光装置 |
JP7322306B1 (ja) | 2020-06-25 | 2023-08-07 | シグニファイ ホールディング ビー ヴィ | セラミック蛍光体アレイ |
JP2023535129A (ja) * | 2020-06-25 | 2023-08-16 | シグニファイ ホールディング ビー ヴィ | セラミック蛍光体アレイ |
Also Published As
Publication number | Publication date |
---|---|
CN106233474A (zh) | 2016-12-14 |
JP2015216353A (ja) | 2015-12-03 |
TW201542965A (zh) | 2015-11-16 |
KR20160146717A (ko) | 2016-12-21 |
EP3136454A4 (en) | 2017-08-30 |
US20170040502A1 (en) | 2017-02-09 |
EP3136454A1 (en) | 2017-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2015163108A1 (ja) | 波長変換接合部材、波長変換放熱部材および発光装置 | |
WO2015163109A1 (ja) | 波長変換部材およびその製造方法 | |
JP5989268B2 (ja) | 蛍光体セラミックス、封止光半導体素子、回路基板、光半導体装置および発光装置 | |
TWI753889B (zh) | 波長轉換構件、其製造方法及發光裝置 | |
WO2018230333A1 (ja) | 波長変換部材及び発光デバイス | |
TWI749058B (zh) | 光學半導體元件覆蓋用薄片 | |
US20170137328A1 (en) | Method of making a ceramic wavelength converter assembly | |
JP2017143236A (ja) | セラミックスプレート、その製造方法および光半導体装置 | |
WO2017221606A1 (ja) | 蛍光体層付光半導体素子およびその製造方法 | |
WO2015163110A1 (ja) | 波長変換部材およびその製造方法 | |
WO2015140854A1 (ja) | 波長変換素子の製造方法 | |
WO2017221608A1 (ja) | 蛍光体層シート、および、蛍光体層付光半導体素子の製造方法 | |
WO2016132890A1 (ja) | 蛍光体セラミックス、封止光半導体素子、回路基板、光半導体装置および発光装置 | |
JP6582907B2 (ja) | 波長変換素子の製造方法並びに波長変換素子及び発光装置 | |
WO2017221607A1 (ja) | 蛍光体層付光半導体素子 | |
JP7097255B2 (ja) | 反射部材接合波長変換部材 | |
WO2017138180A1 (ja) | セラミックスプレート、その製造方法および光半導体装置 | |
TW202209701A (zh) | 光學半導體元件覆蓋用薄片 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15783497 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15303933 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20167029215 Country of ref document: KR Kind code of ref document: A |
|
REEP | Request for entry into the european phase |
Ref document number: 2015783497 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2015783497 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |