WO2015141673A1 - Élément à effet magnétorésistif, procédé de fabrication d'élément à effet magnétorésistif et mémoire magnétique - Google Patents

Élément à effet magnétorésistif, procédé de fabrication d'élément à effet magnétorésistif et mémoire magnétique Download PDF

Info

Publication number
WO2015141673A1
WO2015141673A1 PCT/JP2015/057889 JP2015057889W WO2015141673A1 WO 2015141673 A1 WO2015141673 A1 WO 2015141673A1 JP 2015057889 W JP2015057889 W JP 2015057889W WO 2015141673 A1 WO2015141673 A1 WO 2015141673A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
layer
magnetic
protective film
magnetic layer
Prior art date
Application number
PCT/JP2015/057889
Other languages
English (en)
Japanese (ja)
Inventor
恵弥 矢ヶ部
大沢　裕一
親義 鎌田
沙織 柏田
伊藤　順一
英二 北川
Original Assignee
株式会社 東芝
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社 東芝 filed Critical 株式会社 東芝
Publication of WO2015141673A1 publication Critical patent/WO2015141673A1/fr
Priority to US15/068,062 priority Critical patent/US20160197268A1/en

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Definitions

  • the present embodiment relates to a magnetoresistive effect element, a magnetoresistive effect element manufacturing method, and a magnetic memory.
  • HDD Hard Disk Drive
  • MRAM Magnetoresistive RAM
  • spin transfer magnetization switching method Spin transfer switching
  • the spin injection magnetization reversal method is a technique for reversing the magnetization direction of a magnetic material by passing a current through the magnetic material.
  • the spin injection magnetization reversal method makes it easy to control the magnetization state in a nanoscale magnetic body by a local magnetic field, and the current value for reversing the magnetization can be reduced according to the miniaturization of the magnetic body.
  • a magnetoresistive element as a memory element is formed with an element size of 30 nm or less.
  • a protective film formed on the side surface of the magnetoresistive effect element for example, a film of metal oxide, silicon nitride or the like is formed on the side surface of the element after processing the element.
  • These protective films block the influence of oxygen and moisture on the magnetoresistive element from the outside, and prevent the magnetic properties of the magnetic layer from deteriorating due to oxygen and moisture.
  • This embodiment improves the characteristics of the magnetoresistive element.
  • the magnetoresistive effect element includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, the first magnetic layer, and the second magnetic layer. An intermediate layer therebetween, and a sidewall protective film having a laminated structure on the side surface of the first magnetic layer, the sidewall protective film being provided on the side surface of the first magnetic layer, A first protective film containing, as a main component, a first element having an atomic number larger than the atomic number of the first magnetic element constituting the magnetic layer; and the first magnetic layer side of the first protective film; Is provided on the opposite side, and includes a second protective film containing as a main component a second element having an atomic number smaller than the atomic number of the first magnetic element.
  • FIG. 1 is a diagram for explaining a basic configuration of the magnetoresistive effect element according to the embodiment.
  • FIG. 2 is a diagram for explaining a basic configuration of the magnetoresistive effect element according to the embodiment.
  • FIG. 3 is a diagram for explaining a basic configuration of the magnetoresistive effect element according to the embodiment.
  • FIG. 4 is a diagram for explaining a basic configuration of the magnetoresistive effect element according to the embodiment.
  • FIG. 5 is a diagram for explaining a structural example of the magnetoresistive effect element according to the first embodiment.
  • FIG. 6 is a diagram illustrating one step of the method of manufacturing the magnetoresistive effect element according to the first embodiment.
  • FIG. 7 is a diagram illustrating one step of the method of manufacturing the magnetoresistive effect element according to the first embodiment.
  • FIG. 1 is a diagram for explaining a basic configuration of the magnetoresistive effect element according to the embodiment.
  • FIG. 2 is a diagram for explaining a basic configuration of the magnetoresistive effect element according to
  • FIG. 8 is a diagram for explaining a structural example of the magnetoresistive effect element according to the second embodiment.
  • FIG. 9 is a diagram for explaining a structural example of the magnetoresistive effect element according to the second embodiment.
  • FIG. 10 is a diagram illustrating one step of the method of manufacturing the magnetoresistive effect element according to the second embodiment.
  • FIG. 11 is a diagram illustrating one step of the method of manufacturing the magnetoresistive effect element according to the second embodiment.
  • FIG. 12 is a diagram illustrating one step of the method of manufacturing the magnetoresistive effect element according to the second embodiment.
  • FIG. 13 is a diagram for explaining a structural example of the magnetoresistive effect element according to the third embodiment.
  • FIG. 10 is a diagram illustrating one step of the method of manufacturing the magnetoresistive effect element according to the second embodiment.
  • FIG. 11 is a diagram illustrating one step of the method of manufacturing the magnetoresistive effect element according to the second embodiment.
  • FIG. 12 is a diagram illustrating one step of
  • FIG. 14 is a diagram illustrating one process of the method of manufacturing the magnetoresistance effect element according to the third embodiment.
  • FIG. 15A is a diagram illustrating one step in the method of manufacturing a magnetoresistance effect element according to the third embodiment.
  • FIG. 15B is a diagram illustrating one process in the method of manufacturing a magnetoresistive effect element according to the third embodiment.
  • FIG. 16 is a diagram illustrating one step of the method of manufacturing the magnetoresistive effect element according to the third embodiment.
  • FIG. 17 is a diagram illustrating a step of the method of manufacturing the magnetoresistive effect element according to the fourth embodiment.
  • FIG. 18 is a diagram illustrating a step of the method of manufacturing the magnetoresistive effect element according to the fourth embodiment.
  • FIG. 15A is a diagram illustrating one step in the method of manufacturing a magnetoresistance effect element according to the third embodiment.
  • FIG. 15B is a diagram illustrating one process in the method of manufacturing a magnetoresistive effect element according to the third
  • FIG. 19 is a diagram illustrating a step of the method of manufacturing the magnetoresistance effect element according to the fifth embodiment.
  • FIG. 20 is a diagram illustrating a step of the method of manufacturing the magnetoresistance effect element according to the fifth embodiment.
  • FIG. 21 is a diagram illustrating a process of the magnetoresistive effect element manufacturing method according to the fifth embodiment.
  • FIG. 22 is a diagram for explaining a structural example of the magnetoresistive effect element according to the sixth embodiment.
  • FIG. 23 is a diagram for explaining a structural example of the magnetoresistive effect element according to the sixth embodiment.
  • FIG. 24 is a diagram illustrating a modification of the magnetoresistive effect element according to the embodiment.
  • FIG. 25 is a diagram illustrating a modification of the magnetoresistive element of the embodiment.
  • FIG. 26 is a diagram illustrating an application example of the magnetoresistive effect element according to the embodiment.
  • FIG. 27 is a diagram illustrating an application example of the magnetoresistive effect element of the embodiment
  • FIG. 1 is a plan view showing a basic structure of a magnetoresistive effect element according to an embodiment.
  • FIG. 2 is a cross-sectional view showing the basic structure of the magnetoresistive element of the embodiment.
  • the magnetoresistive effect element 1 of the embodiment has a cylindrical structure.
  • the magnetoresistive effect element 1 includes a lower electrode 19A, an upper electrode 19B, two magnetic layers 13 and 15 provided between the lower electrode 19A and the upper electrode 19B, and two magnetic layers 13 and 15. And an intermediate layer 14 provided.
  • a magnetic tunnel junction (Magnetic Tunnel Junction) is formed by the two magnetic layers 13 and 15 and the intermediate layer 14 sandwiched between them.
  • the magnetoresistive effect element is also referred to as an MTJ element.
  • the magnetization direction of one magnetic layer 13 is variable, and the magnetization direction of the other magnetic layer 15 is fixed (invariant).
  • the magnetic layer 13 having a variable magnetization direction is referred to as a storage layer (or a recording layer or a magnetization free layer)
  • the magnetic layer 15 having a fixed magnetization direction is referred to as a reference layer (or a fixed layer, This is called a magnetization invariant layer.
  • the arrows in the magnetic layers 13 and 15 in FIG. 2 indicate the magnetization directions of the magnetic layers 13 and 15.
  • the magnetization direction of the reference layer 15 is in a fixed state and is not changed.
  • the magnetization direction of the reference layer 15 is “invariable” or “fixed state” means that when a magnetization reversal current for reversing the magnetization direction of the storage layer 13 flows in the reference layer 15, This means that the magnetization direction of the reference layer 15 does not change.
  • the magnetoresistive effect element 1 a magnetic layer having a large magnetization reversal current is used as the reference layer 15, and a magnetic layer having a magnetization reversal current smaller than that of the reference layer 15 is used as the storage layer 13.
  • the magnetoresistive effect element 1 including the storage layer 13 whose magnetization direction is variable and the reference layer 15 whose magnetization direction is unchanged is formed.
  • the magnitude of the magnetization reversal current is based on the damping constant, coercivity, anisotropic magnetic field and volume of the magnetic layer. It is decided. Therefore, by appropriately adjusting these values, a difference is provided between the magnetization reversal current of the storage layer 13 and the magnetization reversal current of the reference layer 15.
  • the magnetoresistive effect element When the magnetization reversal current of the storage layer 13 is supplied to the magnetoresistive effect element (MTJ element), the magnetization direction of the storage layer 13 changes according to the direction of current flow, and the storage layer 13 and the reference layer 15 The relative magnetization arrangement changes. As a result, the magnetoresistive element 1 is in one of a high resistance state (a state in which the magnetization arrangement is antiparallel) and a low resistance state (a state in which the magnetization arrangement is parallel).
  • a high resistance state a state in which the magnetization arrangement is antiparallel
  • a low resistance state a state in which the magnetization arrangement is parallel
  • the storage layer 13 and the reference layer 15 have perpendicular magnetic anisotropy.
  • the easy magnetization directions of the storage layer 13 and the reference layer 15 are perpendicular to the film surface of the magnetic layer (magnetic layer stacking direction).
  • the magnetization oriented in the direction perpendicular to the film surface is called perpendicular magnetization.
  • the magnetoresistive effect element 1 of this embodiment is a perpendicular magnetization type magnetoresistive effect element.
  • the easy magnetization direction is the direction in which the internal energy of the magnetic material becomes the lowest when the spontaneous magnetization is directed in the absence of an external magnetic field, assuming a macro-sized ferromagnetic material.
  • the difficult magnetization direction is the direction in which the internal energy of the magnetic material becomes the largest when the spontaneous magnetization is directed in the absence of an external magnetic field, assuming a macro-sized ferromagnetic material. is there.
  • the lower electrode 19A is provided on the insulating film 80 on the substrate.
  • the upper electrode 19B is provided above the intermediate layer 14 via a magnetic layer (here, the memory layer 13).
  • a sidewall protective film (insulator) 20 is provided on the side surface of the MTJ element 1.
  • the MTJ element 1 is covered with an interlayer insulating film (not shown) via the sidewall protective film 20.
  • the sidewall protective film 20 is a protective film that prevents impurities derived from the outside of the MTJ element 1 such as oxygen and moisture generated during the manufacturing process and constituent elements of the interlayer insulating film from entering the MTJ element 1. As a function.
  • the sidewall protective film 20 on the magnetic layers 13 and 15 included in the MTJ element 1 is an insulator having a laminated structure, and includes at least two protective films (insulating films) 200 and 210.
  • the protective films 200 and 210 in the sidewall protective film 20 are laminated in a direction parallel to the film surface of the film for forming the magnetic layer (a direction perpendicular to the lamination direction of the plurality of magnetic layers).
  • the first protective film 200 is in contact with the side surfaces of the magnetic layers 13 and 15.
  • the second protective film 210 is on the surface (second surface) facing the surface (first surface) of the first protective film 200 on the magnetic layer side. Is provided.
  • the first protective film 200 is provided between the second protective film 210 and the magnetic layers 13 and 15.
  • a second protective film 210 is interposed between the first protective film 200 and the interlayer insulating film.
  • the protective film 200 on the magnetic layer side is heavier than the element (magnetic element) that is the main component of the magnetic layer forming the MTJ element.
  • a film containing an element as a main component for example, an insulating film.
  • the protective film 210 on the side opposite to the magnetic layer side is the main component of the magnetic layer forming the MTJ element.
  • an element having magnetism for forming a magnetic layer such as the storage layer 13 or the reference layer 15 is referred to as a magnetic element.
  • An element lighter than a certain element is an element having an atomic number smaller than the atomic number of a certain element, and an element heavier than a certain element has an atomic number greater than the atomic number of a certain element. It is an element that has.
  • the main component of a layer (material) means an element having the highest ratio among one or more elements (for example, an element that is solid at normal temperature and normal pressure) constituting the layer. .
  • the ratio of each element in a layer (material) is calculated
  • the memory layer 13 is formed of a magnetic material containing an element having a fourth period (atomic number 19 to atomic number 36).
  • the inner protective film 200 contains an element having an atomic number larger than the 37th atomic number as a main component.
  • the outer protective film 210 contains an element having an atomic number smaller than the 22nd atomic number as a main component.
  • the thickness T1 of the first protective film 200 is smaller than the thickness T2 of the second protective film 210 in the sidewall protective film 20 having a laminated structure.
  • the film thicknesses T1 and T2 of the first and second protective films 200 and 210 are parallel to the film surfaces of the films forming the magnetic layers 13 and 15 (perpendicular to the stacking direction of the magnetic layers). Direction).
  • the film thickness of the magnetic layers 13 and 15 and the film thickness of the intermediate layer 14 are the thicknesses in the stacking direction of the magnetic layers.
  • the diffusion of the constituent elements in the laminate with the single layer film to be described will be described.
  • MgAlB is a compound whose main component is an element lighter than Co and Fe (an element having an atomic number smaller than that of a magnetic element).
  • HfB is a compound mainly composed of an element heavier than Co and Fe (an element having an atomic number smaller than that of a magnetic element).
  • Sputtering is performed on the magnetic layer so that a film made of a material mainly composed of an element (atom) that is lighter than the magnetic element (magnetic atom) that forms the magnetic layer (for example, the storage layer) is in direct contact with the magnetic layer.
  • the energy of the sputtering particles is estimated to be several to several tens of eV
  • the element lighter than the magnetic element is driven into the magnetic layer by the sputtered particles.
  • the region (mixing layer) where the atoms of the layer outside the magnetic layer and the constituent atoms of the magnetic layer are mixed is mainly composed of an element (atom) that is lighter than the magnetic layer and the magnetic element (magnetic atom). It is formed near the boundary with the film.
  • the region containing the magnetic element and the heavy element is the magnetic layer. Not formed inside.
  • the layer in direct contact with the magnetic layer is formed of a material whose main component is an element heavier than the magnetic element forming the magnetic layer. It is preferable.
  • a CoFeB film is used for the magnetic layer, and a film mainly composed of Hf is used as a film mainly composed of an element heavier than the magnetic element.
  • a film containing Mg, Al, and B is used as the main film.
  • the nonmagnetic layer on the CoFeB film of FIGS. 3 and 4 is also referred to as a cap layer.
  • FIG. 3 is a graph showing the relationship between the thickness of the nonmagnetic layer and the damping constant of the magnetic layer in the laminate of the magnetic layer and the nonmagnetic layer.
  • the horizontal axis in FIG. 3 corresponds to the film thickness T (unit: nm) of the nonmagnetic layer, and the vertical axis in FIG. 3 corresponds to the damping constant of the magnetic layer.
  • FIG. 3 shows the measurement results of the magnetic properties of the magnetic layer in a laminate (HfB / CoFeB) of a magnetic layer and a single-layer film whose main component is heavier than the magnetic element forming the magnetic layer.
  • a laminate (MgAlB / HfB / CoFeB) of a magnetic layer a layer mainly composed of an element heavier than the magnetic element forming the magnetic layer, and a layer mainly composed of an element lighter than the magnetic element forming the magnetic layer.
  • an element heavier than the magnetic element forming the magnetic layer In a laminated structure of a layer composed mainly of an element heavier than the magnetic element forming the magnetic layer and a layer composed mainly of an element lighter than the magnetic element forming the magnetic layer, an element heavier than the magnetic element forming the magnetic layer The main component layer is in contact with the magnetic layer.
  • the film thickness of the HfB film in contact with the CoFeB film is fixed to 1 nm, and the film thickness of the MgAlB film is changed.
  • the magnetic element constituting the magnetic layer when a layer (here, an HfB film) mainly composed of an element heavier than the magnetic element constituting the magnetic layer is provided on the magnetic layer, the magnetic element constituting the magnetic layer.
  • the damping constant of the magnetic layer tends to increase.
  • the thickness of a layer mainly composed of an element heavier than the magnetic element constituting the magnetic layer is 3 nm or more, the damping constant of the magnetic layer is significantly increased.
  • the thickness of the layer mainly composed of lighter elements than the magnetic element constituting the magnetic layer provided on the layer composed mainly of heavy elements is increased, the increase in the damping constant of the magnetic layer is suppressed. Is done.
  • the layer mainly composed of heavy elements is a thin film of 3 nm or less.
  • FIG. 4 is a graph showing the relationship between the thickness of the nonmagnetic layer and the coercive force Hc of the magnetic layer in the laminate of the magnetic layer and the nonmagnetic layer.
  • the horizontal axis in FIG. 4 corresponds to the film thickness T (unit: nm) of the nonmagnetic layer (cap layer), and the vertical axis in FIG. 4 corresponds to the holding force Hc (unit: Oe) of the magnetic layer.
  • the measurement results of the magnetic properties of the magnetic layer in a laminate (MgAlB / CoFeB) with a single-layer film mainly composed of light elements are shown.
  • FIG. 4 a laminate (MgAlB) of a magnetic layer, a layer mainly composed of an element heavier than the magnetic element forming the magnetic layer, and a layer mainly composed of an element lighter than the magnetic element forming the magnetic layer.
  • the measurement results of the magnetic properties of the magnetic layer in / HfB / CoFeB) are shown.
  • an element heavier than the magnetic element forming the magnetic layer The main component layer is in contact with the magnetic layer.
  • the thickness of the CoFeB film of each sample is 2 nm.
  • the film thickness of the HfB film in contact with the CoFeB film is fixed to 1 nm, and the film thickness of the MgAlB film is changed.
  • the layer composed mainly of the light element and the magnetic layer A mixing layer is formed at the interface.
  • the coercive force of the magnetic layer tends to increase as compared with a case where a layer containing an element heavier than the magnetic element (here, the HfB film) is in contact with the magnetic layer.
  • a layer mainly composed of light elements does not directly contact the memory layer of the MTJ element.
  • the element forming the single layer film may diffuse into the magnetic layer. is there.
  • the coercive force of the magnetic layer may increase.
  • the damping constant of the magnetic layer may increase as the thickness of the single-layer film increases.
  • the magnetic layer is protected from external factors (for example, oxygen and moisture) when the thickness of the single-layer film whose main component is heavier than the magnetic element is reduced. The ability of the single layer film to do so is impaired. As a result, the characteristics of the magnetic layer are deteriorated.
  • a desirable characteristic for the magnetic layer of the MTJ element for example, a desirable characteristic for the storage layer is that the damping constant is small in order to reduce the energy required for magnetization reversal. Further, for example, as in the example of the CoFeB film having a small coercive force shown in FIG. 4, it is desirable that the original coercive force of the magnetic layer can be exhibited without deteriorating the magnetic characteristics of the magnetic layer. Accordingly, when the MTJ element is used as a memory element, the write current (magnetization reversal threshold) can be reduced.
  • a single-layer film made of a material whose main component is a lighter element than the magnetic element forming the magnetic layer, or a single-layer film made of a material whose main component is an element heavier than the magnetic element forming the magnetic layer is oxygen and moisture.
  • the film thickness of the single layer film is reduced in order to suppress changes in the magnetic properties of the magnetic layer caused by direct contact of each single layer film, the ability of the single layer film as a protective film is not satisfied, and oxygen There is a possibility that the magnetic properties of the magnetic layer may change due to or moisture.
  • the insulating film (sidewall protective film) 20 for protecting the inner magnetic layer from external factors such as oxygen and moisture generated during the manufacturing process has a laminated structure. have.
  • the sidewall protective film 20 having a laminated structure includes a protective film 200 mainly composed of an element heavier than the magnetic element forming the magnetic layer (an element having an atomic number larger than the magnetic element), and a magnetic layer. And a protective film 210 containing as a main component an element lighter than the magnetic element forming the element (an element having an atomic number smaller than that of the magnetic element).
  • the protective film 200 mainly composed of an element heavier than the magnetic element is provided between the magnetic layers 13 and 15 and the protective film 210 mainly composed of an element lighter than the magnetic element.
  • the protective film 200 whose main component is an element heavier than the magnetic element is in direct contact with the magnetic layer (for example, the memory layer 13).
  • the MTJ element according to the present embodiment increases the coercivity of the storage layer and protects the magnetic layer due to the direct contact of the protective film 210 mainly composed of an element lighter than the magnetic element with the magnetic layer. Diffusion of elements contained in the film 210 can be prevented.
  • the film thickness T1 of the protective film 200 mainly containing an element heavier than the magnetic element in the magnetic layer is the film of the protective film 210 mainly containing an element lighter than the magnetic element in the magnetic layer. Thinner than thickness T2.
  • the film thickness T1 of the protective film 200 whose main component is an element heavier than the magnetic element is set to 3 nm or less, for example.
  • the film thickness T2 of the protective film 210 mainly composed of an element lighter than the magnetic element is set to 20 nm or less (for example, about 5 nm) thicker than the protective film 200.
  • a film having a light element for example, Al, Mg, and B
  • the stress applied to the magnetic layer from the film having the light element as a main component can be increased.
  • the film thickness T2 of the protective film 210 whose main component is an element lighter than the magnetic element is 20 nm or less.
  • a protective film 210 whose main component is a lighter element than a magnetic element having a thick film thickness is provided between the interlayer insulating film 81 and the thin protective film 200.
  • the insulating film 20 on the side surface of the MTJ element can maintain the function as a protective film for the magnetic layer.
  • the magnetic element Hafnium (Hf) is used as the heavier element, and at least one selected from the group consisting of carbon (C), magnesium (Mg), and aluminum (Al) is used as the lighter element than the magnetic element.
  • Hf, Mg and Al are easier to bond with oxygen than Fe and Co. Therefore, by using Hf, Mg, and Al for the protective film, it is possible to form a high-quality protective film with almost no oxidation of the magnetic layer as compared with a film containing silicon (Si) as a main component.
  • the magnetoresistive effect element can be protected from impurities outside the element, and the characteristics of the magnetoresistive effect element can be improved.
  • a two-layered sidewall protective film 20 is shown, but a three-layered sidewall protective film 20 is provided on the side surface of the laminated structure including the magnetic layers 13 and 15. Also good.
  • the interface between the first and second protective films 200 and 210 may not be steep, and the change in composition at the interface between the first and second protective films 200 and 210 may gradually change.
  • the sidewall protective film 20 is provided with a film containing both an element heavier than the magnetic element and an element lighter than the magnetic element between the film 200 containing the element heavier than the magnetic element and the film 210 containing the element heavier than the magnetic element. Having a structure similar to the structure formed.
  • the first protective film 200 is mainly composed of an element having an atomic number larger than the magnetic element (for example, an element having an atomic number larger than 37). If it is not the main component of 200, an element having an atomic number smaller than that of the magnetic element may be included in the first protective film 200.
  • the second protective film 210 mainly composed of an element having an atomic number smaller than the magnetic element (for example, an element having an atomic number smaller than 22)
  • the magnetic element is not the main component of the second protective film 210. An element having a higher atomic number may be included in the second protective film 210.
  • the structure substantially the same as the structure of the magnetoresistive effect element of FIG.1 and FIG.2 is demonstrated as needed.
  • the MTJ element 1 ⁇ / b> A of the first embodiment is provided on the substrate 80 so as to be covered with the interlayer insulating film 81.
  • the MTJ element 1 ⁇ / b> A of the first embodiment includes a shift adjustment layer 17, a spacer layer 16, a reference layer 15, an intermediate layer 14, a memory layer 13, and an insulator (side wall protective film) 20 having a stacked structure. .
  • the MTJ element 1A in FIG. 5 is a top free type (bottom pin type) MTJ element.
  • the shift adjustment layer 17 is provided on the lower electrode 19 ⁇ / b> A on the substrate 80.
  • the reference layer 15 is stacked above the shift adjustment layer 17 via the spacer layer 16.
  • the intermediate layer (tunnel barrier layer) 14 is stacked on the reference layer 15.
  • the storage layer 13 is stacked on the reference layer 15 via the intermediate layer 14.
  • the upper electrode 19B is stacked on the memory layer 13.
  • a shift adjustment layer (referred to as a shift correction layer or a bias magnetic field layer) 17 is provided adjacent to the reference layer 15 in order to bring the magnetic field (shift magnetic field) from the reference layer 15 to the storage layer 13 close to zero. Yes.
  • the magnetization of the shift adjustment layer 17 is in a fixed state, and the magnetization direction of the shift adjustment layer is set opposite to the magnetization direction of the reference layer 15.
  • the lower electrode 19A is, for example, one layer that also serves as a lower electrode of the magnetoresistive effect element and a lead line.
  • the lower electrode 19A is preferably formed from a material having low electrical resistance and excellent diffusion resistance.
  • the lower electrode 19A may have a function as a buffer layer in order to grow a flat perpendicular magnetization magnetic layer.
  • the upper electrode 19B is used as a mask (hard mask) for patterning the MTJ element 1A in addition to the function as an electrode.
  • the material used for the upper electrode 19B is preferably a material having low electrical resistance, excellent diffusion resistance, and high etching resistance / milling resistance.
  • the upper electrode 19B may be formed from a newly formed conductor from which a member used as a hard mask during patterning is peeled off. For example, after the laminated structure is processed using a carbon hard mask, the carbon is peeled off by oxygen. A low-resistance electrode material such as gold is formed on the upper part of the laminated structure from which the hard mask is peeled off. Thereby, the upper electrode 19B is formed.
  • a sidewall protective film 20 as a protective film is provided on the side surface of the memory layer 13.
  • the sidewall protective film 20 is an insulator having a laminated structure composed of a plurality of films.
  • the sidewall protective film 20 includes two protective films 200 and 210 made of different materials.
  • the inner protective film 200 is provided on the side surface of the memory layer 13, and the outer protective film 210 is provided between the inner protective film 200 and the interlayer insulating film 81. ing.
  • an interface layer may be provided in the vicinity of the interface between the storage layer 13 and the intermediate layer 14 and in the vicinity of the interface between the reference layer 15 and the intermediate layer 14.
  • the dimension (diameter) of the storage layer 13 in the direction parallel to the substrate surface is larger than the dimensions of the layers below the storage layer 13 such as the intermediate layer 14, the reference layer 15, and the shift adjustment layer 17. small.
  • the sidewall protective film 20 is provided on the side surface of the memory layer 13 and on the upper surface of the intermediate layer 14.
  • the sidewall protective film 20 is provided on the side surfaces of the layers 14, 15, 16, 17, and 19 B below the storage layer 13 at the ends of the intermediate layer 14 and the reference layer 15.
  • the second protective film 210 may be in contact with the side surface of the reference layer 15 without forming the first protective film 200 on the side surface of the reference layer 15.
  • the inner (magnetic layer side, lower layer side) protective film 200 is in direct contact with the side surface of the memory layer 13.
  • the protective film 200 is in contact with the upper surface and the side surface of the intermediate layer 14.
  • the protective film 200 is in contact with the side surfaces of the intermediate layer 14, the reference layer 15, the spacer layer 16, and the shift adjustment layer 17.
  • the film thickness T1 of the inner (magnetic layer side) first protective film 200 is smaller than the film thickness T2 of the outer (interlayer insulating film side) second protective film 210.
  • the film thickness T1 of the first protective film 200 is 3 nm or less
  • the film thickness T2 of the second protective film 210 is about 3 nm to 20 nm.
  • the thickness of the second protective film 210 is preferably 20 nm or less (for example, about 5 nm).
  • the second protective film 210 may be thicker than 20 nm, for example, about 30 nm.
  • the memory layer 13 is formed of a magnetic material containing an element having a fourth period (atomic number 19 to atomic number 36).
  • the memory layer 13 contains, for example, one or more elements selected from the group consisting of manganese (Mn), iron (Fe), and cobalt (Co) as a main component.
  • Nickel (Ni) may be used in place of Mn, Fe, and Co as the magnetic element of the storage layer 13.
  • the memory layer 13 may contain boron (B) in addition to at least one of Mn, Fe, and Co.
  • the memory layer 13 is formed using, for example, at least one of CoFeB and a Mn-based alloy.
  • the memory layer 13 is a single layer film or a laminated film containing CoFeB.
  • the memory layer 13 is a single layer film or a laminated film containing a Mn-based alloy.
  • the memory layer 13 may be a combination of CoFeB and a Mn-based alloy, for example, a laminated film including CoFeB and a Mn-based alloy.
  • the material of the reference layer 15 examples include a ferromagnetic material having an L1 0 structure or an L1 1 structure such as FePd, FePt, CoPd, and CoPt, a soft magnetic material such as CoFeB, a ferrimagnetic material such as TbCoFe, and a Mn-based alloy. At least one selected is used.
  • the reference layer 15 may be an artificial lattice formed of a magnetic material (for example, NiFe, Fe, or Co) and a nonmagnetic material (for example, Cu, Pd, or Pt).
  • an insulating material such as magnesium oxide (MgO), magnesium nitride (MgN), aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), or a laminated film thereof is used.
  • the intermediate layer 14 is formed from an insulating film containing MgO as a main component.
  • a nonmagnetic metal or nonmagnetic semiconductor may be used for the intermediate layer 14.
  • the shift adjustment layer 17 is formed from the same material as the reference layer 15.
  • the spacer layer 16 between the reference layer 15 and the shift adjustment layer 17 is formed of a metal such as ruthenium (Ru) and Ta.
  • the lower electrode 19A has a laminated structure including a metal layer such as tantalum (Ta), copper (Cu), ruthenium (Ru), or iridium (Ir).
  • Ta is used for the upper electrode 19B.
  • the inner first protective film 200 in contact with the magnetic layer is heavier than the magnetic element forming the magnetic layer (here, the memory layer) (larger than the magnetic element).
  • An element having an atomic number is included in the sidewall protective film 20 having a laminated structure.
  • the outer second protective film 210 that is not in contact with the magnetic layer is a film containing an element lighter than the magnetic element forming the magnetic layer (an element having an atomic number larger than the magnetic element). is there.
  • the first protective film 200 in the side wall protective film 20 is an element having an atomic number larger than the 37th atomic number (first element). ) Is formed from an insulating material having a main component. If it is not the main component of the first protective film 200, an element having an atomic number smaller than the 22nd atomic number may be included in the first protective film 200.
  • the first protective film 200 is formed of an insulating material containing hafnium (Hf).
  • Hf is a main component of the protective film (for example, an insulating compound).
  • the first protective film 200 is selected from one selected from an HfBO film, an HfAlBO film, an ScHfBO film, an HfBN film, an HfAlBN film, an ScHfBN film, an HfBON film, an HfAlBON film, an ScHfBON film, and the like. Become.
  • the first protective film 200 includes an oxide, nitride, and the like mainly composed of at least one selected from niobium (Nb), zirconium (Zr), tantalum (Ta), and tungsten (W). And oxynitrides.
  • the first protective film 200 may be a film in which B (boron) is contained in an oxide, nitride, or oxynitride containing Nb, Zr, Ta, W, or the like as a main component.
  • the second protective film 210 in the sidewall protective film 200 is an element having a smaller atomic number than the 22nd atomic number (second element). ) Is formed from an insulating material having a main component. If it is not the main component of the second protective film 210, an element having an atomic number larger than the 37th atomic number may be included in the second protective film 210.
  • the second protective film 210 is formed of an insulating material including at least one selected from magnesium (Mg), aluminum (Al), carbon (C), and the like.
  • Mg magnesium
  • Al aluminum
  • C carbon
  • the second protective film 210 includes a C film, MgAlBO film, AlBO film, ScAlBO film, MgAlBN film, CN film, MgAlBN film, AlBN film, ScAlBN film, MgAlBON film, AlBON film, ScAlBON film, It consists of one selected from a CAlN film, a CAlO film, a CAlSiO film, a CAlSiN film, and the like.
  • a conductive layer 19A to be a lower electrode is deposited on the substrate 80 by, for example, a sputtering method.
  • a magnetic layer (shift adjustment layer) 17Z, a conductive layer (spacer layer) 16Z, a magnetic layer (reference layer) 15Z, an insulating layer (intermediate layer) 14Z, a magnetic layer (memory layer) 13Z, and a conductive layer 19B is deposited on the conductive layer 19A by using a sputtering method or an ALD method.
  • a stacked body (processed layer) 1Z for forming a top-free type MTJ element is formed on the substrate 80.
  • the conductive layer 19B on the magnetic layer 13Z is processed into a predetermined shape (for example, a cylindrical shape) by lithography and etching, and a mask (hard mask) 19B for processing the stacked body 1Z including the magnetic layers 13Z, 15Z, and 17Z. Is formed in the upper part of the laminated body 1Z.
  • Milling is performed on the stacked body 1Z using the hard mask 19B as a mask.
  • Milling for processing the laminated body 1Z is ion milling using an inert gas such as argon (Ar), krypton (Kr), and xenon (Xe).
  • the stacked body 1Z is processed by ion milling using Ar.
  • the laminated body 1Z may be processed by etching using gas cluster ions.
  • the incident angle ⁇ of the ions (ion beam) 900 with respect to the stacked body 1Z is, for example, based on a direction perpendicular to the film surface (substrate surface) of the layer to be processed included in the stacked body 1Z (0 °). ) Is set to about 50 °.
  • ion milling in which an ion beam is irradiated from a direction in which ions are inclined with respect to the film surface (substrate surface) of the layer to be processed is referred to as inclined ion milling.
  • Ion milling is performed using the upper surface of the insulating film 14Z as an intermediate layer as a stopper. As a result, as shown in FIG. 7, the memory layer 13 having a shape corresponding to the pattern of the hard mask 19 ⁇ / b> B is formed on the insulating film 14.
  • a first protective film 200 having a predetermined film thickness T1 (for example, 3 nm or less) is formed by a sputtering method so as to cover the processed memory layer 13.
  • the first protective film 200 in contact with the memory layer 13 is formed from a material whose main component is an element heavier than the magnetic element of the memory layer 13.
  • the first protective film 200 on the memory layer 13 is made of an insulating material whose main component is an element having an atomic number greater than 37 (for example, Hf).
  • the first protective film 200 is made of, for example, one material selected from HfBO, HfAlBO, ScHfBO, HfBN, HfAlBN, ScHfBN, HfBON, HfAlBON, ScHfBON, and the like.
  • the upper surface of the intermediate layer 14 may recede to the substrate 80 side due to overetching.
  • the first protective film 200 covers the side surface of the upper side of the intermediate layer 14 (portion directly below the storage layer 13).
  • the second protective film 210 is formed by sputtering so that the second protective film 210 has a thickness T2 (for example, about 5 nm to 20 nm) thicker than the first protective film 200. , Formed on the first protective film 200.
  • the second protective film (protective film not in contact with the magnetic layer) 210 on the first protective film 200 is mainly composed of an element having an atomic number smaller than 22 (for example, at least one of C, Mg, and Al). It consists of an insulating material as a component.
  • the second protective film 210 is made of, for example, one material selected from C, MgAlBO, AlBO, ScAlBO, MgAlBN, CN, MgAlBN, AlBN, ScAlBN, MgAlBON, AlBON, ScAlBONCAlN film, CAlO film, and the like.
  • the first and second protective films 200 and 210 may be formed using a vacuum film forming technique such as an ion beam sputtering method, an ion plating method, a vacuum deposition method, an ALD method, or a CVD method. Further, the first and second protective films 200 and 210 deposited by these methods are oxidized or nitrided by natural oxidation, oxygen plasma, nitrogen plasma, or the like in order to achieve sufficient insulation of the films. May be applied to the deposited protective films 200 and 210. For example, the oxidation treatment for the protective films 200 and 210 is performed by exposure of the stacked body to the atmosphere, oxidation treatment in vacuum, radical oxidation treatment, plasma oxidation treatment, or treatment using oxygen ion clusters.
  • a vacuum film forming technique such as an ion beam sputtering method, an ion plating method, a vacuum deposition method, an ALD method, or a CVD method.
  • the first and second protective films 200 and 210 deposited by these methods
  • the nitriding treatment for the protective films 200 and 210 is performed by radical nitriding treatment, plasma nitriding treatment, or treatment using nitrogen ion clusters.
  • the oxidation treatment or nitridation treatment on the protective films 200 and 210 may be performed for each layer.
  • a film eg, a conductor film or a semiconductor film formed over a layer to be processed (a stacked body including a magnetic layer) without containing oxygen or nitrogen is insulated by the above-described oxidation treatment or nitridation treatment.
  • the first and second protective films 200 and 210 may be formed.
  • the oxide, nitride, or oxynitride forming the sidewall protective film 20 is not dependent on the valence state (composition ratio) of the constituent elements of the oxide / nitride, as long as insulation is ensured. Good.
  • first and second protective films 200, 210 When each layer below the intermediate layer 14Z is processed before the formation of the first and second protective films 200, 210, the first and second layers are formed on the side surfaces of the processed layers 14Z, 15Z, 16Z, 17Z. Second protective films 200 and 210 are deposited. Further, when each layer below the intermediate layer 14 is processed after the first protective film 200 is deposited, the second protective film 210 is deposited on the side surfaces of the processed layers 15, 16, and 17.
  • the interlayer insulating film 81 is deposited on the substrate 80 by, for example, the CVD method so as to cover the MTJ element including the sidewall protective film 20 having the stacked structure. Is done.
  • the protective film 210 having a relatively thick film thickness for example, greater than 3 nm and 20 nm or less
  • the protective film 200 having a thin film thickness for example, 3 nm or less. Therefore, even if the protective film 200 in contact with the magnetic layers 13 and 15 is thin, oxygen or moisture generated during the deposition of the interlayer insulating film 81 causes the side wall protective film 20 as a protective film to form the side wall protective film 20 as a protective film. It is possible to prevent penetration and penetration into the magnetic layers 13 and 15.
  • the MTJ element of the first embodiment is formed.
  • the side wall protective film 20 having the laminated structure including the first and second protective films 200 and 210 does not cause deterioration of the characteristics of the magnetic layer due to the side wall protective film 20.
  • deterioration (corrosion) of the magnetic layer due to external impurities can be prevented.
  • the first and second protective films 200 and 210 are films containing elements (for example, Mg, Al, and Hf) that are more easily oxidized than the constituent elements (for example, Co and Fe) of the magnetic layer. Therefore, it is possible to form a high-quality insulating film having a high protection capability for the magnetic layer while suppressing oxidation of the magnetic layer.
  • elements for example, Mg, Al, and Hf
  • the constituent elements for example, Co and Fe
  • the first protective film 200 formed on the side surface of the MTJ element 1A is an element heavier than the magnetic element constituting the storage layer 13 and the reference layer 15 (larger than the magnetic element).
  • the element having an atomic number is the main component.
  • Elements heavier than magnetic elements are less likely to diffuse into the magnetic layer than elements lighter than magnetic elements.
  • the influence of the weight of atoms is significant on sputtered particles (particles having energy of several eV to several tens eV) that fly due to the sputtering phenomenon, and even if the sputtered particles collide with heavy elements, the heavy elements Is hard to be driven into other members.
  • this embodiment can prevent diffusion of an element lighter than the magnetic element into the magnetic layer, which occurs when a film mainly composed of an element lighter than the magnetic element is in contact with the magnetic layer. As a result, this embodiment can suppress the deterioration of the magnetic layer.
  • an element heavier than the magnetic element is placed between the magnetic layer and the film 210 mainly composed of an element lighter than the magnetic element contained in the magnetic layer (an element having an atomic number smaller than the magnetic element).
  • a protective film 200 is present. Accordingly, the present embodiment can suppress a change in the coercive force of the magnetic layer that occurs when a film containing an element lighter than the magnetic element contacts the magnetic layer. Further, the film thickness T1 of the film 200 containing an element heavier than the magnetic element constituting the memory layer 13 and the reference layer 15 is thin. Therefore, this embodiment can suppress an increase in the damping constant of the magnetic layer due to an increase in the thickness of the film 200 containing an element heavier than the magnetic element.
  • the present embodiment can suppress the increase in the coercive force and the damping constant of the storage layer, and thus can reduce the write current of the MTJ element.
  • a thick protective film 210 made of an element that is easily oxidized is provided between the thin insulating film (protective film) 200 and the interlayer insulating film 81.
  • the constituent atoms of the films 210 and 81 deposited after the formation of the protective film 200 are reduced. Can be prevented from entering the magnetic layer.
  • the magnetic layer can be protected from external factors during the manufacturing process, and the element characteristics of the MTJ element can be improved.
  • FIG. 8 is a cross-sectional view for explaining the structure of the MTJ element of this embodiment.
  • the MTJ element 1B of the present embodiment is a bottom-free (top pin type) MTJ element.
  • the MTJ element 1B includes a lower electrode 19A, a base layer 12, a memory layer 13, an intermediate layer 14, a reference layer 15, and an upper electrode 19B in this order from the substrate side.
  • the MTJ element 1B includes a sidewall protective film 20 having a laminated structure provided on the side surface of the MTJ element.
  • the sidewall protective film 20 includes a first protective film 200 and a second protective film 210.
  • the first and second protective films 200 and 210 are stacked on the side surface of the MTJ element 1 ⁇ / b> B in a direction parallel to the surface of the substrate 80.
  • the underlayer 12 has a two-layer structure, and includes a first layer (hereinafter referred to as a lower layer film) 120 on the upper surface of the lower electrode 19A and a second layer (on the upper surface on the first layer 120). Hereinafter, it is referred to as an upper layer film) 121.
  • the upper layer film 121 is in direct contact with the memory layer 13.
  • the lower layer film 120 is adjacent to a surface facing the surface of the upper layer film 121 on the storage layer 13 side.
  • a material having a small spin pumping effect is preferably used for the upper layer film 121 of the underlayer 12.
  • the upper film 121 may have a function for improving the crystallinity of the memory layer 13.
  • FIG. 9 is a cross-sectional view showing a modification of the MTJ element of this embodiment.
  • the lower layer film 120 of the underlayer 12 may have a convex cross-sectional shape.
  • the bottom dimension of the lower layer film 120 of the foundation layer 12 in the direction parallel to the substrate surface and the dimension of the lower electrode 19B in the direction parallel to the substrate surface are the lower layer film 120. Greater than the top dimension.
  • the bottom dimension of the lower layer film 120 of the foundation layer 12 is based on the dimensions of the upper layer film 121, the storage layer 13, the intermediate layer 14, the reference layer 15, and the upper electrode 19B. Is also big.
  • the bottom free type MTJ element 1B is a perpendicular magnetization type MTJ element, similar to the MTJ element of the first embodiment.
  • Each of the storage layer 13 and the reference layer 15 having perpendicular magnetic anisotropy is made of a ferromagnetic material containing a magnetic element having a fourth period.
  • the storage layer 13 is made of CoFeB.
  • the first protective film 200 on the magnetic layer side of the sidewall protective film 20 having a laminated structure is an element heavier than the magnetic element, for example, an element having an atomic number larger than the atomic number 37. It is formed with the insulating material which has as a main component. However, if it is not the main component of the first protective film 200, an element having an atomic number of 37 or less, more specifically, an atomic number smaller than the atomic number of 22 is included in the first protective film 200. May be.
  • the first protective film 200 is formed from an insulating material containing hafnium (Hf) as a main component.
  • the first protective film 200 includes one selected from an HfBO film, an HfAlBO film, an ScHfBO film, an HfBN film, and the like.
  • the second protective film 210 on the side opposite to the magnetic layer side (interlayer insulating film side) of the laminated side wall protective film 20 is an element lighter than the magnetic element, for example, No. 22 It is formed from the insulating material which has as a main component the element which has an atomic number smaller than this.
  • the second protective film 210 is formed of an insulating material mainly containing magnesium (Mg), aluminum (Al), carbon (C), or the like.
  • the second protective film 210 is selected from a C film, a MgAlBO film, an AlBO film, a ScAlBO film, a MgAlBN film, a CAlN film, a CAlO film, a CAlSiO film, and the like. It consists of one. If it is not the main component of the second protective film 210, an element having an atomic number greater than the 37th atomic number may be included in the second protective film 210.
  • FIG. 8 and FIG. 9 may further include a shift adjustment layer and a spacer layer.
  • the MTJ element according to the second embodiment includes the sidewall protective film 20 having a stacked structure including the first and second protective films 200 and 210 as in the first embodiment.
  • the MTJ element of the second embodiment can prevent deterioration (corrosion) of the magnetic layer due to impurities from the outside without causing deterioration of the characteristics of the magnetic layer due to the sidewall protective film.
  • the second embodiment can provide an MTJ element that can protect the magnetic layer from impurities during the manufacturing process and that has improved element characteristics.
  • FIGS. 10 to 12 are cross-sectional process diagrams for explaining each process of the method for manufacturing the MTJ element of this embodiment.
  • the layer 19B is deposited on the substrate 80 using a sputtering method or an ALD method.
  • the underlayer 12Z has a two-layer structure, and the first film (lower layer film) 120Z is formed on the conductive layer 19A, and the second film (upper layer film) 121Z is formed on the first film 120Z. Has been.
  • a stacked body (layer to be processed) 1Y for forming a bottom-free type MTJ element is formed on the substrate 80.
  • the conductive layer 19B is processed to be a hard mask having a pattern of a predetermined shape, ion milling using Ar gas, for example, is performed using the hard mask 19B as a mask. Executed while rotating the substrate.
  • the incident angle of the ions (ion beam) in the ion milling is set to an angle (for example, about 50 °) with respect to the substrate surface so that scattered matter due to ion milling does not adhere to the side surface of the intermediate layer 14. Is set.
  • the stacked body 1Y can be processed without deposits (residues) caused by scattered substances from layers below the intermediate layer 14 being deposited on the side surfaces of the processed intermediate layer 14. . Processing of the stacked body 1Y by tilted ion milling is continued until the upper portion of the underlayer 12, for example, the upper layer film 121 on the magnetic layer side is processed.
  • the first protective film 200 whose main component is an element heavier than the magnetic element forming the memory layer (for example, an element having an atomic number larger than the 37th atomic number) has been processed. It is deposited on the side surface of the laminated structure 1B using any one of sputtering, ion beam sputtering, ALD, or CVD while maintaining the vacuum state in the chamber.
  • a second protective film 210 containing as a main component an element lighter than the magnetic element forming the memory layer (for example, an element having an atomic number larger than the atomic number of No. 22) is provided.
  • the protective film 200 is deposited by sputtering, for example, in a state where the vacuum state in the chamber is maintained so as to have a film thickness T2 larger than the film thickness T1.
  • the protective films 200 and 210 may be oxidized or nitrided in the atmosphere or by plasma in order to oxidize or nitride the film more sufficiently.
  • the oxidation treatment for the protective films 200 and 210 is performed by exposure of the stack to the atmosphere, oxidation treatment in vacuum, radical oxidation treatment, plasma oxidation treatment, or treatment using oxygen ion clusters.
  • the nitriding treatment for the protective films 200 and 210 is performed by radical nitriding treatment, plasma nitriding treatment, or treatment using nitrogen ion clusters.
  • the oxidation treatment or nitridation treatment on the protective films 200 and 210 may be performed for each layer. Note that the oxide, nitride, or oxynitride forming the sidewall protective film 20 is not dependent on the valence state (composition ratio) of the constituent elements of the oxide / nitride, as long as insulation is ensured. Good.
  • a side wall protective film (side wall protective film) 20 having a laminated structure is formed on the side surface of the laminated body 1B.
  • the protective film 20, the base layer 12, and the lower electrode 19B are etched between adjacent stacked bodies. Thereafter, an interlayer insulating film 81 is deposited on the substrate 80 by a CVD method so as to cover the MTJ element 1B including the sidewall protective film 20 having a laminated structure.
  • the magnetoresistive effect element of the second embodiment is formed by the above steps.
  • the manufacturing method of the MTJ element according to the second embodiment is similar to that of the first embodiment, using the sidewall protective film having a stacked structure including the first and second protective films 200 and 210.
  • Degradation (corrosion) of the magnetic layer of the MTJ element can be prevented from impurities generated during the manufacturing process without causing deterioration of the characteristics of the magnetic layer due to the sidewall film as the protective film.
  • the protective films 200 and 210 can be formed by using a film deposition technique, the degree of freedom in selecting a material used for the protective film can be increased. Moreover, this embodiment can suppress that the freedom degree of the material which forms a magnetic tunnel junction falls according to the material used for a protective film.
  • an MTJ element with improved element characteristics can be provided.
  • a side wall protective film having a multilayer structure is formed on the side surface of the MTJ element by using a reattachment generated during processing of the multilayer structure (MTJ element). This is different from the embodiment.
  • FIG. 13 is a cross-sectional view for explaining the structure of the MTJ element of this embodiment.
  • the MTJ element of the third embodiment has a structure similar to that of the second embodiment.
  • the MTJ element 1 ⁇ / b> C of the present embodiment includes a sidewall protective film 20 having a laminated structure, as in the second embodiment.
  • the sidewall protective film 20 includes a first protective film 200 and a second protective film 210.
  • the first and second protective films (insulating films) 200 and 210 are stacked on the side surface of the MTJ element 1 ⁇ / b> B in a direction parallel to the surface of the substrate 80.
  • the first protective film 200 is not formed between the lower layer film 120 and the second protective film 210 among the sidewall protective films 200 and 210 having a laminated structure.
  • the second protective film 210 is in direct contact with the lower layer film 120.
  • the underlayer 12 having a laminated structure includes a lower layer film 120 on the lower layer side (lower electrode side) and an upper layer film 121 on the upper layer side (upper electrode side).
  • the protective film 200 on the magnetic layer side (inner side) It is formed by oxidation or nitridation of redeposits resulting from scattered matter generated from the upper layer film 121.
  • the upper layer film 121 contains the same element as the main component of the protective film 200.
  • the protective film 200 in contact with the magnetic layer is formed from an oxide, nitride, or oxynitride of deposits resulting from the scattered matter of the upper layer film 121.
  • the upper film 121 of the underlayer 12 is formed of a material that is heavier than the magnetic element (for example, the fourth period magnetic element) of the magnetic layers 13 and 15, for example, an element having an atomic number greater than 37.
  • the upper layer film 121 is a conductive film containing Hf as a main component.
  • the upper layer film 121 is made of at least one selected from an HfB film, an HfAlB film, an HfMgB film, an ScHfB film, and the like.
  • the first protective film 200 is made of the same material as that of the first protective film of the first embodiment.
  • the first protective film 200 includes an HfBO film, an HfMgBO film, an HfAlBO film, an ScHfBO film, an HfBN film, and the like. It consists of one selected from.
  • the material of the first protective film 200 of the sidewall protective film 20 having a laminated structure in the present embodiment depends on the material used for the upper layer film 121 of the base layer.
  • an element having an atomic number smaller than 22 may be included in the upper film 121 of the underlayer 12 and the first protective film 200.
  • the composition ratio of the element having an atomic number greater than 37 (for example, Hf) in the protective film 200 of the sidewall protective film 20 is the composition ratio of the element having an atomic number larger than 37 in the upper film 121 of the underlayer 12. And may be different.
  • the protective film 210 on the side opposite to the magnetic layer side is a scattered matter generated from the lower layer film 120 of the base layer 12 during etching.
  • the redeposition resulting from the above is formed by oxidation, nitridation or oxynitridation.
  • the lower layer film 120 on the lower layer side (lower electrode side) than the upper layer film 121 contains the same element as the main component of the protective film 210.
  • the protective film 210 is formed from oxides or nitrides of deposits resulting from the scattered matter of the lower layer film 120.
  • the lower layer film 120 is formed of a material whose main component is an element that is lighter than the magnetic element (for example, the fourth period magnetic element) of the magnetic layers 13 and 15, for example, an element having an atomic number smaller than No. 22.
  • the lower layer film 120 is a conductive film containing as a main component at least one element selected from the group consisting of C, Mg, Al, and Sc.
  • the lower layer film 120 of the underlayer 12 is made of at least one selected from an MgAlB film, an AlB film, a ScAlB film, an MgAlB film, and the like.
  • the same material as that of the first embodiment is used for the second protective film 210, and the second protective film 210 is selected from a C film, a MgAlBO film, an AlBO film, a ScAlBO film, a MgAlBN film, and the like. It consists of one.
  • the material of the second protective film 210 of the sidewall protective film 20 of the laminated structure in the present embodiment depends on the material used for the lower layer film 120 of the base layer 12.
  • an element having an atomic number greater than 36 may be included in the lower layer film 120 of the underlayer 12 and the second protective film 210 unless it is a main component of the second protective film 210. Further, the composition ratio of the element having an atomic number smaller than 22 in the protective film 210 of the sidewall protective film 20 may be different from the composition ratio of the element having an atomic number smaller than 22 in the lower layer film 120 of the base layer 12. Good.
  • FIG. 14 to FIG. 16 is a cross-sectional process diagram showing each process of the manufacturing method of the MTJ element of this embodiment.
  • the manufacturing method of the MTJ element of this embodiment will be described with reference to FIG.
  • the lower layer film 120Z of the underlayer 12 is formed of a material whose main component is an element that is lighter than the magnetic element (for example, the fourth period magnetic element) of the magnetic layers 13 and 15, for example, an element having an atomic number smaller than No. 22. Is done.
  • the lower layer film 120Z is a conductive film containing as a main component at least one element selected from the group consisting of C, Mg, Al, and Sc.
  • the lower layer film 120Z of the underlayer 12 includes at least one selected from an MgAlB film, an AlB film, a ScAlB film, an MgAlB film, and the like.
  • the upper film 121X of the underlayer 12 is made of a material whose main component is an element heavier than the magnetic element (for example, the fourth period magnetic element) of the magnetic layers 13 and 15, for example, an element having an atomic number greater than 37th.
  • the upper layer film 121X is a conductive film containing Hf as a main component.
  • the upper film 121X of the underlayer 12 is made of at least one selected from an HfB film, an HfAlB film, an HfMgB film, an ScHfB film, and the like.
  • the etching rate (milling rate) of the material of the upper layer film 121X is preferably slower than the etching rate of the material of the lower layer film 120Z.
  • FIG. 15A and FIG. 15B are diagrams more specifically showing the structure of the underlayer when a plurality of films included in the underlayer are formed of materials having different etching rates.
  • FIG. 15A shows a cross-sectional structure of the base layer after processing when the etching rate of the upper layer film 121 is slower than the etching rate of the lower layer film 120 in the base layer 12 having a laminated structure.
  • FIG. 15B shows a cross-sectional structure of the base layer 12 after processing when the etching rate of the upper layer film 121 is higher than the etching rate of the lower layer film 120 in the base layer 12 having a stacked structure.
  • each lower layer film 120 is etched to the same depth in the direction perpendicular to the substrate surface.
  • the upper film 121 and the lower film 120 have taper angles ⁇ 1 , ⁇ 2 , and ⁇ 2X formed between the bottom surface of the film and the side surface of the film, respectively.
  • the taper angle ⁇ 2 of the lower film 120 is larger than the taper angle ⁇ 1 of the upper film 121. This is because the lower layer film 120 is removed earlier than the upper layer film 121 under the same etching (ion milling) conditions. As a result, the taper spread of the lower layer film 120 is smaller than the taper spread of the upper layer film 121.
  • the taper angle ⁇ 2X of the lower layer film 120 is larger than the taper angle ⁇ 1 of the upper layer film 121. This is because the lower layer film 120 is less likely to be removed than the upper layer film 121 and remains on the substrate under the same etching (ion milling) conditions.
  • the dimension of the lower layer film 120 in the direction parallel to the substrate surface is such that the etching rate of the upper layer film 121 is lower. It becomes smaller than the dimension of the lower layer film 120 when the etching rate of the film 120 is faster.
  • the material of the upper layer film 121 and the etching rate of the upper layer film 121 under the same etching conditions are made slower than the etching rate of the lower layer film 120 for the miniaturization of the MTJ element.
  • the material of the lower layer film 120 is preferably selected.
  • the laminate is processed.
  • the intermediate layer of the upper layer film 121X of the underlayer 12 is processed so that the lower layer film 120Z of the underlayer 12X is not exposed.
  • the incident angle of Ar ions 909 is changed from an angle inclined with respect to the substrate surface (film surface included in the multilayer structure) to an angle substantially perpendicular to the substrate surface.
  • Ion milling is performed on the laminated structure.
  • ion milling in which ions (ion beams) are irradiated from a direction substantially perpendicular to the substrate surface is referred to as vertical ion milling.
  • the remaining portion of the underlayer 12 that has not been removed by the tilted ion milling is processed by this vertical ion milling. Scatters resulting from the underlayer 12 processed by the vertical ion milling are deposited on the side surfaces of the magnetic layer. Thus, the deposits resulting from the scattered matter are deposited on the side surfaces of the magnetic layers 13 and 15.
  • the underlayer 12 having a laminated structure is processed from the upper side of the laminated structure toward the substrate side by vertical ion milling. Therefore, a deposit (for example, a film containing Hf) 121R caused by the film 121 on the upper side of the underlayer 12 is deposited on the side surface of the stacked structure so as to be in contact with the side surfaces of the magnetic layers 13 and 15. Then, an adherent (for example, a film containing at least one of C, Mg, and Al) 120R caused by the lower layer film 120 of the underlayer 12 is deposited on the adherent 121R caused by the upper layer film 121.
  • a deposit for example, a film containing Hf
  • Oxidation treatment or nitridation treatment is performed in a state in which the two-layered deposits 121R and 120R are deposited on the side surfaces of the stacked body 1Y (magnetic layers 13 and 15).
  • the attachments 121R and 120R are oxidized or nitrided, and the side wall protective film 20 including the two protective films 200 and 210 made of different materials from each other is processed. Formed on top.
  • the oxidation of the deposits 120R and 121R is performed by exposing the laminate to the atmosphere.
  • the deposits 120R and 121R may be oxidized for each layer.
  • the oxidation of the deposits 120R and 121R may be performed by an oxidation process in vacuum, a radical oxidation process, a plasma oxidation process, or a process using oxygen ion clusters.
  • the laminated sidewall protective film 20 may be formed by nitriding treatment on the deposits 120R and 121R.
  • the deposits 120R and 121R are nitrided by radical nitridation, plasma nitridation, or treatment using nitrogen ion clusters.
  • the oxide, nitride, or oxynitride forming the sidewall protective film 20 is not dependent on the valence state (composition ratio) of the constituent elements of the oxide / nitride, as long as insulation is ensured. Good.
  • the film thickness of each film 120, 121 of the underlayer 12, and the upper layer film 121 of the underlayer 12 is controlled.
  • the MTJ element of the third embodiment is formed.
  • an insulating film as a protective film of the magnetic layer can be formed by insulating the deposit caused by the underlayer. As a result, this embodiment can reduce damage to the magnetic layer due to the formation of the protective film.
  • Hf, Mg, and Al contained in the sidewall protective film 20 are more easily oxidized than Co and Fe contained in the magnetic layer. Therefore, in the present embodiment, even if the oxidation is weak enough not to oxidize the magnetic layer, the films 200 and 210 as good quality protective films can be formed on the magnetic layer.
  • the MTJ element and the manufacturing method thereof according to the third embodiment can provide an MTJ element with improved element characteristics, as in the first and second embodiments.
  • the inner protective film is formed from the reattachment generated when the laminated body (MTJ element) is processed.
  • the outer protective film is formed by a film deposition technique.
  • the MTJ element 1C of the fourth embodiment includes a base layer 12 having a multilayer structure and a sidewall protective film 20 having a multilayer structure.
  • the magnetic layer side (inner side) film 200 of the side wall protective film 20 having a laminated structure is formed of deposits resulting from the scattering of the lower layer film 120 of the underlayer 12 during processing.
  • the main component element contained in the lower layer film 120 is the same as the main component element contained in the protective film 200 inside the sidewall protective film 20.
  • the lower layer film 120 is formed of a material whose main component is an element heavier than the fourth period magnetic element, for example, an element having an atomic number greater than 37th.
  • the lower layer film 120 is, for example, a conductive film containing Hf as a main component.
  • the lower layer film 120 is formed from at least one selected from the group consisting of HfB, HfAlB, HfMgB, ScHfB, and the like.
  • the protective film 200 in contact with the magnetic layers 13 and 15 in the side wall protective film 20 having a laminated structure is an oxide film, a nitride film, or an oxynitride formed from a deposit caused by the scattered material of the lower layer film 120 of the underlayer 12. It is a material film. Similar to the above-described embodiment, the protective film 200 is a film (for example, an insulating film) made of an oxide, nitride, or oxynitride containing Hf as a main component. In the present embodiment, the protective film 200 may be a film (for example, an insulating film) formed from a deposit caused by the scattered material of the upper film 121 of the base layer 12.
  • the protective film 210 that is not in contact with the magnetic layers 13 and 15 of the laminated side wall protective film 20 is a film formed by a film deposition technique such as sputtering.
  • FIGS. 17 and 18 are cross-sectional process diagrams for explaining the method for manufacturing the MTJ element of this embodiment.
  • the manufacturing method of the MTJ element of the present embodiment will be described using FIGS. 9, 10 and 12 as appropriate.
  • a stacked body for forming the MTJ element is formed on the substrate 80.
  • the lower layer 120 on the lower electrode side of the underlayer 12 is an element heavier than the fourth period magnetic element (for example, Co or Fe) forming the magnetic layer 13, for example, having an atomic number greater than 37th. It is formed from a material whose main component is an element (for example, Hf). Thereafter, processing of the laminated body by tilted ion milling is executed based on the hard mask.
  • the tilted ion milling is performed until the upper surface of the lower layer film 120 in contact with the lower electrode 19 ⁇ / b> A is exposed in the underlying layer 12 having a laminated structure.
  • the laminated body 1Y is processed by this tilted ion milling without the scattered matter caused by the upper layer film 121 of the underlayer 12 adhering to the processed magnetic layers 13 and 15 and the intermediate layer.
  • an oxidation treatment or a nitridation treatment is performed in a state where the deposit 120R containing an element having an atomic number greater than 37 as a main component is deposited on the side surfaces of the magnetic layers 13, 15 and the intermediate layer 14. Is executed. Thereby, the deposit 120R is insulated.
  • a protective film 200 mainly composed of an element having an atomic number greater than 37 is formed so as to be in contact with the magnetic layers 13 and 15.
  • the protective film 200 is an oxide film or a nitride film containing Hf as a main component.
  • the protective film 200 is formed to have a film thickness of about 1 to 3 nm.
  • the oxidation of the deposit 120R is performed by exposing the laminate to the atmosphere.
  • the oxidation of the deposit 120R may be performed by an oxidation process in vacuum, a radical oxidation process, a plasma oxidation process, or a process using oxygen ion clusters.
  • the protective film 200 may be formed by nitriding treatment on the deposit 120R.
  • nitriding of the deposit 120R is performed by radical nitriding, plasma nitriding, or processing using nitrogen ion clusters.
  • the protective film 210 mainly composed of an element lighter than the fourth period magnetic element, for example, an element having an atomic number smaller than 22 (for example, C, Mg, Al, or Sc) is formed by a sputtering method, a CVD method, or the like. Is formed on the stacked body 1Y so as to cover the side surfaces of the magnetic layers 13 and 15 via the protective film 200.
  • an element having an atomic number smaller than 22 for example, C, Mg, Al, or Sc
  • the MTJ element of the fourth embodiment is formed.
  • the oxide, nitride, or oxynitride forming the sidewall protective film 20 is not dependent on the valence state (composition ratio) of the constituent elements of the oxide / nitride, as long as insulation is ensured. Good.
  • the protective film 200 inside the side wall protective film 20 of the laminated structure is formed by insulating the deposits resulting from the scattered matter of the upper layer film 121 on the upper electrode side of the underlying layer 12 of the laminated structure. May be.
  • the upper layer film 121 is formed of a material whose main component is an element having an atomic number greater than 37 (for example, Hf).
  • the MTJ element and the manufacturing method thereof according to the fourth embodiment can provide an MTJ element with improved element characteristics, as in the first to third embodiments.
  • the inner protective film is formed by a film deposition technique
  • the outer protective film is a laminated body (MTJ element). It differs from the first to fourth embodiments in that it is formed from a re-deposited material that is generated during the processing.
  • the configuration of the MTJ element (magnetoresistance element, magnetic memory element) according to the fifth embodiment will be described.
  • the structure of the MTJ element of this embodiment is similar to the structure of the MTJ element of the third embodiment.
  • the structure of the MTJ element of this embodiment will be described with reference to FIG.
  • the MTJ element 1 ⁇ / b> C of the fifth embodiment includes a base layer 12 having a stacked structure and a sidewall protective film 20 having a stacked structure, as in the first to fourth embodiments.
  • the main component element contained in the lower layer film 120 of the underlayer 12 is the same as the main component element contained in the protective film 210 outside the sidewall protective film 20.
  • the protective film 210 on the outer side (interlayer insulating film side) of the sidewall protective film 20 is formed from an oxide, nitride, or oxynitride of deposits resulting from the scattered matter of the lower layer film 120.
  • the main component element contained in the lower layer film 120 is the same as the main component element contained in the protective film 210 outside the sidewall protective film 20.
  • the lower layer film 120 is formed of a material whose main component is an element lighter than the magnetic element of the fourth period, for example, an element having an atomic number smaller than No. 22.
  • the lower layer film 120 is a conductive film containing, for example, at least one selected from C, Mg, Al, and Sc as a main component.
  • the lower layer film 120 of the underlayer 12 is formed from at least one selected from the group consisting of an MgAlB film, an AlB film, a ScAlB film, an MgAlB film, and the like.
  • the protective film 210 that is not in contact with the magnetic layer in the side wall protective film 20 of the laminated structure is an oxide film, nitride film, or oxynitride film formed from a deposit caused by the scattered material of the lower layer film 120 of the underlayer 12. It is. Similar to the above-described embodiment, the protective film 210 is an insulating film made of an oxide, nitride, or oxynitride containing at least one selected from C, Mg, Al, and Sc as a main component. . In the present embodiment, the protective film 210 may be an insulating film (protective film) formed from a deposit caused by the scattered matter of the upper layer film 121 of the base layer 12.
  • the stacked body 1 ⁇ / b> Y for forming the MTJ element is formed on the substrate 80.
  • the lower layer 120 on the lower electrode side of the underlayer 12 is an element lighter than the fourth period magnetic element (for example, Co or Fe) forming the magnetic layer 13, for example, an atomic number smaller than 22 It is formed from a material whose main component is an element (for example, C, Mg, Al, and Sc). Thereafter, processing of the stacked body 1Y by tilted ion milling is executed based on the hard mask.
  • Gradient ion milling is performed until the upper surface of the lower layer film 120 in contact with the lower electrode 19A in the underlying layer 12 having a laminated structure is exposed.
  • a first protective film 200 (for example, an insulating film containing Hf as a main component) 200 containing an element having an atomic number greater than 37 as a main component is processed by, for example, a sputtering method or the like, and the intermediate layers 13 and 15. Deposited on the side of layer 14. The protective film 200 is deposited on the exposed surface of the lower layer film 120.
  • the protective film 200 on the lower layer film 120 is removed by tilted ion milling in which the incident angle of the ion beam is set to about 50 ° so that the upper surface of the lower layer film 120 is exposed.
  • the film 120 is exposed.
  • the film thickness of the protective film 200 on the side surfaces of the magnetic layers 13 and 15 may be reduced by this inclined ion milling.
  • the thinned protective film 200 has a thickness of about 1 to 3 nm.
  • the protective film 200 is preferably deposited.
  • the lower layer film 120 mainly composed of elements having atomic numbers smaller than 22 (for example, C, Mg, Al, and Sc) is etched. Scattered material of the lower layer film 120 etched by the vertical ion milling adheres on the first protective film 200.
  • the deposit 120 ⁇ / b> R resulting from the scattered material of the lower layer film 120 is deposited on the first protective film 200.
  • Oxidation treatment or nitridation treatment is performed in the state where the deposit 120R is deposited on the first protective film 200.
  • the oxidation of the deposit 120R is performed by exposing the laminated body to the atmosphere.
  • the oxidation of the deposit 120R may be performed by an oxidation process in vacuum, a radical oxidation process, a plasma oxidation process, or a process using oxygen ion clusters.
  • the protective film 200 may be formed by nitriding treatment on the deposit 120R.
  • nitriding of the deposit 120R is performed by radical nitriding, plasma nitriding, or processing using nitrogen ion clusters.
  • the deposit 120R is insulated, and the protective film 210 mainly composed of an element having an atomic number smaller than No. 22 (for example, at least one of C, Mg, and Al) It is formed on the protective film 200 whose main component is an element having an atomic number greater than 37.
  • the protective film 210 mainly composed of an element having an atomic number smaller than No. 22 (for example, at least one of C, Mg, and Al) It is formed on the protective film 200 whose main component is an element having an atomic number greater than 37.
  • the MTJ element of the fifth embodiment is formed.
  • the oxide, nitride, or oxynitride forming the sidewall protective film 20 is not dependent on the valence state (composition ratio) of the constituent elements of the oxide / nitride, as long as insulation is ensured. Good.
  • the tilted ion milling for removing the first protective film 200 on the lower layer film 120 may be omitted.
  • the protective film 200 on the lower layer film 120 is removed by vertical ion milling.
  • the scattered matter of the etched first protective film 200 adheres to the protective film 200 on the side surfaces of the magnetic layers 13 and 15.
  • the film thickness of the protective film 200 on the side surfaces of the magnetic layers 13 and 15 becomes thick due to the adhesion of scattered matter on the protective film 200. Therefore, it is preferable to control the thickness of the protective film 200 during deposition in consideration of the fact that the thickness of the protective film 200 is increased due to the deposits.
  • the first protective film 200 may be deposited on the side surfaces of the magnetic layers 13 and 15 by once interrupting the etching of the laminated structure when the upper surface of the upper layer film 121 of the underlayer is exposed.
  • an MTJ element with improved element characteristics can be provided as in the first to fourth embodiments.
  • the MTJ element 1D of the sixth embodiment is different from the MTJ elements of the first to fifth embodiments in that it has a base layer having a three-layer structure.
  • 22 and 23 are cross-sectional views for explaining the structure of the MTJ element of this embodiment.
  • the underlayer 12 includes a lower layer film 120 on the lower electrode side, an upper layer film 121 on the upper electrode side, and an intermediate layer film 125 between the lower layer film 120 and the upper layer film 121. Yes.
  • the lower layer film 120 is in contact with the lower electrode 19 ⁇ / b> A, and the upper layer film 121 is in contact with the memory layer 13.
  • the base layer 12 having a three-layer structure may be used as the lower electrode.
  • a side wall protective film 20 having a laminated structure is provided on the side surface of the magnetic tunnel junction including the storage layer 13, the reference layer 15, and the intermediate layer 14.
  • the sidewall protective film 20 covers the entire side surface of the base layer 12 having a three-layer structure.
  • the lowermost layer 120 of the three-layered base layer has a convex cross-sectional shape.
  • the side surface on the upper side of the lower layer film 120 is covered with the sidewall protective film 20, and the side surface on the bottom side of the lower layer film 120 is covered with the interlayer insulating film 81.
  • the middle layer film 125 of the three-layer base layer is covered with the sidewall protective film 20.
  • the first protective film 200 is a film containing an element heavier than the magnetic element forming the magnetic layer (an element having an atomic number larger than the atomic number of the magnetic element).
  • the second protective film 210 is a film containing an element lighter than the magnetic element forming the magnetic layer (an element having an atomic number smaller than the atomic number of the magnetic element).
  • the film 200 containing as a main component an element heavier than the magnetic element is a protective film 200 containing an element having an atomic number greater than 37, for example, Hf. is there.
  • the film 210 containing an element lighter than the magnetic element as a main component is selected from elements having an atomic number smaller than No. 22, such as C, Mg, and Al.
  • the protective film 210 includes at least one of the above.
  • Each of the first and second protective films 200 is formed by, for example, a sputtering method, an ALD method, or the like.
  • the inner protective film 200 included in the side wall protective film on the side surface of the magnetic layer is formed.
  • One film selected from the three films 120, 121, and 125 in the formation 12 contains an element having an atomic number larger than the 37th atomic number as the main component of the protective film 200 as a main component.
  • the base layer 12 is formed.
  • One of the three films 120, 121, and 125 includes an element having an atomic number smaller than the 22nd atomic number as a main component of the protective film 210 as a main component.
  • one of the upper layer film 121 and the middle layer film 125 in the base layer One film is a film containing an element heavier than a magnetic element as a main component.
  • the films 125 and 120 on the lower electrode side of the film containing an element heavier than the magnetic element as a main component are made of a film containing an element heavier than the magnetic element as a main component.
  • the oxidation of the deposit due to the etching of the base layer having a three-layer structure is performed by exposing the laminated body to the atmosphere.
  • the deposits 120R and 121R may be oxidized for each layer.
  • Oxidation of the deposits resulting from the three-layer underlayer may be performed by oxidation in vacuum, radical oxidation, plasma oxidation, or treatment using oxygen ion clusters.
  • the side wall protective film 20 having a laminated structure may be formed by nitriding treatment on the deposit.
  • the nitridation of the deposit is performed by radical nitriding, plasma nitriding, or processing using nitrogen ion clusters.
  • the oxide, nitride, or oxynitride that forms the sidewall protective film only needs to have insulating properties without depending on the valence state (composition ratio) of the constituent elements of the oxide / nitride. .
  • the upper layer film 121 in contact with the magnetic layer 13 is used as a functional layer for improving the crystallinity and characteristics of the magnetic layer, and the middle layer film 125 and the lower layer film 120 form the films 200 and 210 in the sidewall protective film 20.
  • the underlayer 12 including two or more films 120, 121, and 125 the sidewall protective film 20 including the plurality of films 200 and 210 made of different materials is caused by the scattered matter of the underlayer 12.
  • the underlayer for improving the characteristics of the magnetic layer can be provided in the MTJ element.
  • the protective film 200 containing an element heavier than the magnetic element is at least a memory. What is necessary is just to be provided on the side surface of the layer 13.
  • the side surfaces of the reference layer 15 and the intermediate layer 14 are in contact with the protective film 210 containing an element lighter than the magnetic element.
  • the sidewall protective film 20 having a laminated structure may have a three-layer structure.
  • an insulating film 209 made of, for example, a silicon nitride film may be provided as a protective film between the interlayer insulating film 81 and the film 210 containing an element lighter than the magnetic element.
  • an insulating film containing both an element heavier than the magnetic element and an element lighter than the magnetic element may be provided between the film 200 containing the element heavier than the magnetic element and the film 210 containing the element heavier than the magnetic element.
  • the magnetoresistive element of the above-described embodiment is used as a memory element of a magnetic memory, for example, an MRAM (Magnetoresistive Random Access Memory).
  • MRAM Magneticoresistive Random Access Memory
  • STT type MRAM Spin-torque transfer MRAM
  • FIG. 26 is a diagram showing a memory cell array of the MRAM according to this application example and a circuit configuration in the vicinity thereof.
  • the memory cell array 9 includes a plurality of memory cells MC.
  • a plurality of memory cells MC are arranged in an array in the memory cell array 9.
  • a plurality of bit lines BL, bBL and a plurality of word lines WL are provided in the memory cell array 9.
  • the bit lines BL and bBL extend in the column direction.
  • the word line WL extends in the row direction.
  • the two bit lines BL and bBL form one bit line pair.
  • the memory cell MC is connected to the bit lines BL and bBL and the word line WL.
  • a plurality of memory cells MC arranged in the column direction are connected to a common bit line pair BL, bBL.
  • the plurality of memory cells MC arranged in the row direction are connected to a common word line WL.
  • the memory cell MC includes, for example, one magnetoresistive element (MTJ element) 1 as a memory element and one selection switch 2.
  • MTJ element magnetoresistive element 1
  • the magnetoresistive element (MTJ element) 1 described in the first to sixth embodiments or modifications is used.
  • the selection switch 2 is, for example, a field effect transistor (Field Effect Transistor).
  • the field effect transistor as the selection switch 2 is referred to as a selection transistor 2.
  • One end of the MTJ element 1 is connected to the bit line BL, and the other end of the MTJ element 1 is connected to one end (source / drain) of the current path of the selection transistor 2.
  • the other end (drain / source) of the current path of the selection transistor 2 is connected to the bit line bBL.
  • a control terminal (gate) of the selection transistor 2 is connected to the word line WL.
  • One end of the word line WL is connected to the row control circuit 4.
  • the row control circuit 4 controls activation / deactivation of the word line based on an external address signal.
  • Column control circuits 3A and 3B are connected to one end and the other end of the bit lines BL and bBL.
  • the column control circuits 3A and 3B control activation / deactivation of the bit lines BL and bBL based on an external address signal.
  • the write circuits 5A and 5B are connected to one end and the other end of the bit lines BL and bBL via the column control circuits 3A and 3B, respectively.
  • the write circuits 5A and 5B each have a source circuit such as a current source and a voltage source for generating the write current IWR , and a sink circuit for absorbing the write current.
  • the write circuits 5A and 5B supply a write current IWR to a memory cell selected from the outside (hereinafter referred to as a selected cell) when writing data.
  • the write circuit 5A, 5B at the time of writing data to the MTJ element 1, according to the data to be written to the selected cell flows in both directions the write current I WR in the MTJ element 1 in the memory cell MC. That is, in accordance with data to be written in the MTJ element 1, a write current I WR toward the bit line bBL from the bit line BL, or the write current I WR toward the bit line BL from the bit line bBL can write circuit 5A, the output from 5B Is done.
  • the read circuit 6A is connected to the bit lines BL and bBL via the column control circuit 3A.
  • the read circuit 6A includes a voltage source or a current source that generates a read current, a sense amplifier that detects and amplifies a read signal, a latch circuit that temporarily holds data, and the like.
  • the read circuit 6A supplies a read current to the selected cell when data is read from the MTJ element 1.
  • the current value of the read current is smaller than the current value of the write current (magnetization reversal threshold) so that the magnetization of the storage layer is not reversed by the read current.
  • the current value or potential at the read node differs depending on the resistance value of the MTJ element 1 to which the read current is supplied.
  • Data stored in the MTJ element 1 is determined based on the amount of variation (read signal, read output) corresponding to the magnitude of the resistance value.
  • the read circuit 6A is provided on one end side in the column direction of the memory cell array 9, but two read circuits are provided on one end and the other end in the column direction of the memory cell array 9, respectively. It may be provided.
  • a buffer circuit for example, a buffer circuit, a state machine (control circuit), or an ECC (Error Checking and Correcting) circuit may be provided in the same chip as the memory cell array 9.
  • ECC Error Checking and Correcting
  • FIG. 27 is a cross-sectional view showing an example of the structure of the memory cell MC provided in the memory cell array 9 of the MRAM of this application example.
  • the memory cell MC is formed in the active area AA of the semiconductor substrate 70.
  • the active area AA is partitioned by an insulating film 71 embedded in the element isolation region of the semiconductor substrate 70.
  • the surface of the semiconductor substrate 70 is covered with interlayer insulating films 80A, 80B, 81.
  • the MTJ element 1 is provided in the interlayer insulating film 81.
  • the upper end of the MTJ element 1 is connected to the bit line 76 (BL) through the upper electrode 19B.
  • the lower end of the MTJ element 1 is connected to the source / drain diffusion layer 64 of the selection transistor 2 through the lower electrode 19A and the contact plug 72B embedded in the interlayer insulating films 80A and 80B.
  • the source / drain diffusion layer 63 of the select transistor 2 is connected to the bit line 75 (bBL) via a contact plug 72A in the interlayer insulating film 80A.
  • a gate electrode 62 is provided on the surface of the active area AA between the source / drain diffusion layer 64 and the source / drain diffusion layer 63.
  • the gate electrode 62 extends in the row direction and is used as the word line WL.
  • the MTJ element 1 is provided immediately above the plug 72B. However, the MTJ element 1 may be disposed at a position shifted from immediately above the contact plug (for example, above the gate electrode of the selection transistor) using an intermediate wiring.
  • FIG. 27 shows an example in which one memory cell is provided in one active area AA.
  • two memory cells adjacent in the column direction may be provided in one active area AA so that the two memory cells share one bit line bBL and the source / drain diffusion layer 63.
  • the cell size of the memory cell MC is reduced.
  • the selection transistor 2 is a planar field effect transistor, but the structure of the field effect transistor is not limited to this.
  • a field effect transistor having a three-dimensional structure such as RCAT (Recess Channel Transistor) or FinFET may be used as the selection transistor.
  • the RCAT has a structure in which a gate electrode is embedded in a trench (recess) in a semiconductor region via a gate insulating film.
  • the FinFET has a structure in which a gate electrode three-dimensionally intersects a strip-shaped semiconductor region (fin) via a gate insulating film.
  • the MTJ element 1 of one embodiment selected from the plurality of embodiments described above is used as a memory element of MRAM.
  • the MTJ element 1 in the memory cell MC includes a sidewall protective film 20 having a stacked structure.
  • the sidewall protective film 20 includes a first protective film (insulating film) 200 containing an element (for example, Hf) having an atomic number larger than a magnetic element (for example, Co or Fe) as a main component and an atomic number smaller than the magnetic element.
  • a second protective film (insulating film) 210 containing as a main component an element having at least one of Mg, Al, B and C (for example).
  • the MTJ element according to the present embodiment allows the oxygen generated in the manufacturing process after the MTJ element to be formed without deterioration of the characteristics of the magnetic layers 13 and 15 caused by the sidewall protective film 20 by the stacked sidewall protective film 20. Protected from moisture.
  • the MTJ element 1 of the present embodiment can suppress the increase in coercive force and damping constant of the memory layer 13 due to the contact between the protective film and the memory layer, the increase in write current can be suppressed.
  • the magnetic memory including the magnetoresistive element of the embodiment can improve the operating characteristics.
  • the magnetoresistive element of the embodiment may be applied to a magnetic memory other than the MRAM.
  • the magnetic memory using the magnetoresistive element of the embodiment is used as an alternative memory such as a DRAM or an SRAM.
  • the magnetic memory using the magnetoresistive element of the embodiment is used as a cache memory of a storage device such as an SSD (Solid State Drive), for example.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Un élément à effet magnétorésistif, selon un mode de réalisation de la présente invention, comprend des première et seconde couches magnétiques, une couche intermédiaire entre les première et seconde couches magnétiques, et un film de protection de paroi latérale qui est sur une surface latérale de la première couche magnétique et possède une structure multicouche. Le film de protection de paroi latérale comprend : un premier film de protection qui est disposé sur la surface latérale de la première couche magnétique et contient, en tant que constituant principal, un premier élément qui a un numéro atomique plus grand que le numéro atomique d'un premier élément magnétique qui constitue l'intérieur de la première couche magnétique ; et un second film de protection qui est disposé sur une surface du premier film de protection, ladite surface étant sur le côté inverse de la surface latérale de première couche magnétique, et contient, en tant que constituant principal, un second élément qui a un numéro atomique plus petit que le numéro atomique du premier élément magnétique.
PCT/JP2015/057889 2014-03-18 2015-03-17 Élément à effet magnétorésistif, procédé de fabrication d'élément à effet magnétorésistif et mémoire magnétique WO2015141673A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/068,062 US20160197268A1 (en) 2014-03-18 2016-03-11 Magnetoresistive effect element, manufacturing method of magnetoresistive effect element, and magnetic memory

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014055384A JP6139444B2 (ja) 2014-03-18 2014-03-18 磁気抵抗効果素子、磁気抵抗効果素子の製造方法及び磁気メモリ
JP2014-055384 2014-03-18

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/068,062 Continuation US20160197268A1 (en) 2014-03-18 2016-03-11 Magnetoresistive effect element, manufacturing method of magnetoresistive effect element, and magnetic memory

Publications (1)

Publication Number Publication Date
WO2015141673A1 true WO2015141673A1 (fr) 2015-09-24

Family

ID=54144638

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/057889 WO2015141673A1 (fr) 2014-03-18 2015-03-17 Élément à effet magnétorésistif, procédé de fabrication d'élément à effet magnétorésistif et mémoire magnétique

Country Status (3)

Country Link
US (1) US20160197268A1 (fr)
JP (1) JP6139444B2 (fr)
WO (1) WO2015141673A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019077661A1 (fr) * 2017-10-16 2019-04-25 Tdk株式会社 Élément à magnétorésistance à effet tunnel, mémoire magnétique, mémoire intégrée et procédé de fabrication d'un élément à magnétorésistance à effet tunnel
US10490730B2 (en) 2017-09-20 2019-11-26 Kabushiki Kaisha Toshiba Magnetic memory device with increased storage density
JP2020088223A (ja) * 2018-11-28 2020-06-04 株式会社東芝 磁気記憶装置
US11991932B2 (en) 2020-07-17 2024-05-21 Taiwan Semiconductor Manufacturing Company Limited Post-treatment processes for ion beam etching of magnetic tunnel junction and structures formed by the same

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102175471B1 (ko) * 2014-04-04 2020-11-06 삼성전자주식회사 자기 저항 메모리 장치 및 그 제조 방법
US10230042B2 (en) 2016-03-03 2019-03-12 Toshiba Memory Corporation Magnetoresistive element and method of manufacturing the same
KR102494102B1 (ko) 2016-03-10 2023-02-01 삼성전자주식회사 자기 메모리 장치의 제조 방법
JP6216403B2 (ja) 2016-03-22 2017-10-18 株式会社東芝 磁気記憶素子及び不揮発性記憶装置
JP2018148158A (ja) 2017-03-09 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 強磁性トンネル接合素子及びその製造方法
US9985199B1 (en) * 2017-03-15 2018-05-29 International Business Machines Corporation Prevention of switching of spins in magnetic tunnel junctions by on-chip parasitic magnetic shield
WO2018182698A1 (fr) * 2017-03-31 2018-10-04 Intel Corporation Dispositifs de mémoire de couple de transfert de spin perpendiculaire (psttm) à stabilité thermique améliorée et leurs procédés de formation
US10297746B2 (en) * 2017-04-05 2019-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Post treatment to reduce shunting devices for physical etching process
WO2019005157A1 (fr) * 2017-06-30 2019-01-03 Intel Corporation Dispositifs de mémoire de couple de transfert de spin perpendiculaire (psttm) à stabilité améliorée et à taux de magnétorésistance élevée à effet tunnel, et leurs procédés de formation
JP6434103B1 (ja) * 2017-09-20 2018-12-05 株式会社東芝 磁気メモリ
CN117479817A (zh) * 2017-10-16 2024-01-30 Tdk株式会社 隧道磁阻效应元件、磁存储器及内置型存储器
US10475991B2 (en) * 2018-02-22 2019-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Fabrication of large height top metal electrode for sub-60nm magnetoresistive random access memory (MRAM) devices
WO2019188203A1 (fr) * 2018-03-30 2019-10-03 国立大学法人東北大学 Dispositif de jonction à effet tunnel magnétique, procédé de fabrication de dispositif de jonction à effet tunnel magnétique et mémoire magnétique
JP6985220B2 (ja) 2018-07-19 2021-12-22 株式会社日立ハイテク 磁気トンネル接合素子、それを用いた磁気メモリおよび磁気トンネル接合素子の製造方法
US11056643B2 (en) * 2019-01-03 2021-07-06 International Business Machines Corporation Magnetic tunnel junction (MTJ) hard mask encapsulation to prevent redeposition
JP7186115B2 (ja) * 2019-03-18 2022-12-08 キオクシア株式会社 磁気メモリ
JP2020155459A (ja) * 2019-03-18 2020-09-24 キオクシア株式会社 磁気記憶装置及びその製造方法
CN112310273B (zh) * 2019-07-29 2023-04-07 中电海康集团有限公司 磁性隧道结及其制备方法
JP2021150485A (ja) * 2020-03-19 2021-09-27 キオクシア株式会社 磁気記憶装置及び磁気記憶装置の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299726A (ja) * 2001-03-30 2002-10-11 Toshiba Corp 磁気抵抗効果素子、磁気ヘッド、磁気再生装置及び磁気記憶装置
JP2003086861A (ja) * 2001-09-14 2003-03-20 Alps Electric Co Ltd 磁気検出素子及びその製造方法
JP2004241763A (ja) * 2003-01-14 2004-08-26 Tdk Corp 磁気抵抗効果素子及びその製造方法、並びに、これを用いた磁気ヘッド、ヘッドサスペンションアセンブリ及び磁気ディスク装置
JP2008165940A (ja) * 2007-01-04 2008-07-17 Hitachi Global Storage Technologies Netherlands Bv Ｃｐｐ型磁気抵抗効果ヘッドおよびその製造方法
JP2012119684A (ja) * 2010-11-29 2012-06-21 Samsung Electronics Co Ltd 磁気トンネル接合構造体の製造方法及びこれを利用する磁気メモリ素子の製造方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW453865B (en) * 2000-05-23 2001-09-11 Optovent Ab Apparatus and method for monitoring a patient's breath and supplying a gas or gases different from ambient air to the patient, and nose adapter for the apparatus
JP2008130807A (ja) * 2006-11-21 2008-06-05 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
US8953285B2 (en) * 2010-05-05 2015-02-10 Headway Technologies, Inc. Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
JP5417367B2 (ja) * 2011-03-22 2014-02-12 株式会社東芝 磁気メモリの製造方法
US8866242B2 (en) * 2011-11-10 2014-10-21 Qualcomm Incorporated MTJ structure and integration scheme
US8796841B2 (en) * 2012-04-09 2014-08-05 Freescale Semiconductor, Inc. Semiconductor device with embedded heat spreading
JP5514256B2 (ja) * 2012-05-18 2014-06-04 株式会社東芝 磁気記憶素子及びその製造方法
JP2014011391A (ja) * 2012-07-02 2014-01-20 Toshiba Corp 半導体記憶装置
US9277237B2 (en) * 2012-07-30 2016-03-01 Vmware, Inc. User interface remoting through video encoding techniques
US8747680B1 (en) * 2012-08-14 2014-06-10 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device
JP5460792B2 (ja) * 2012-08-16 2014-04-02 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気ヘッドアセンブリ、磁気記録再生装置及び磁気抵抗効果素子の製造方法
JP5575198B2 (ja) * 2012-09-25 2014-08-20 株式会社東芝 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子の製造装置
JP5680045B2 (ja) * 2012-11-14 2015-03-04 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP5865858B2 (ja) * 2013-03-22 2016-02-17 株式会社東芝 磁気抵抗効果素子及び磁気抵抗効果素子の製造方法
US9070868B2 (en) * 2013-06-04 2015-06-30 International Business Machines Corporation Thermally assisted MRAM with a multilayer encapsulant for low thermal conductivity
US9196825B2 (en) * 2013-09-03 2015-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Reversed stack MTJ
US9105572B2 (en) * 2013-09-09 2015-08-11 Hiroyuki Kanaya Magnetic memory and manufacturing method thereof
US20150072440A1 (en) * 2013-09-09 2015-03-12 Satoshi Inada Method of manufacturing magnetoresistive element
US20150069556A1 (en) * 2013-09-11 2015-03-12 Kabushiki Kaisha Toshiba Magnetic memory and method for manufacturing the same
KR20150037047A (ko) * 2013-09-30 2015-04-08 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
KR20150036987A (ko) * 2013-09-30 2015-04-08 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US9306152B2 (en) * 2014-03-10 2016-04-05 Kabushiki Kaisha Toshiba Magnetic memory and method for manufacturing the same
WO2015136723A1 (fr) * 2014-03-11 2015-09-17 Yasuyuki Sonoda Mémoire magnétique et procédé de fabrication de mémoire magnétique
US20150263275A1 (en) * 2014-03-12 2015-09-17 Kazuhiro Tomioka Manufacturing method of magnetic memory device and manufacturing apparatus of magnetic memory device
US9595663B2 (en) * 2014-03-12 2017-03-14 Kabushiki Kaisha Toshiba Magnetic memory having magnetoresistive element and method of manufacturing magnetoresistive element
US20150263267A1 (en) * 2014-03-13 2015-09-17 Hiroyuki Kanaya Magnetic memory and method for manufacturing the same
US9647203B2 (en) * 2014-03-13 2017-05-09 Kabushiki Kaisha Toshiba Magnetoresistive element having a magnetic layer including O
EP2950358B1 (fr) * 2014-05-29 2021-11-17 Suzhou Lekin Semiconductor Co., Ltd. Dispositif électroluminescent en boîtier

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299726A (ja) * 2001-03-30 2002-10-11 Toshiba Corp 磁気抵抗効果素子、磁気ヘッド、磁気再生装置及び磁気記憶装置
JP2003086861A (ja) * 2001-09-14 2003-03-20 Alps Electric Co Ltd 磁気検出素子及びその製造方法
JP2004241763A (ja) * 2003-01-14 2004-08-26 Tdk Corp 磁気抵抗効果素子及びその製造方法、並びに、これを用いた磁気ヘッド、ヘッドサスペンションアセンブリ及び磁気ディスク装置
JP2008165940A (ja) * 2007-01-04 2008-07-17 Hitachi Global Storage Technologies Netherlands Bv Ｃｐｐ型磁気抵抗効果ヘッドおよびその製造方法
JP2012119684A (ja) * 2010-11-29 2012-06-21 Samsung Electronics Co Ltd 磁気トンネル接合構造体の製造方法及びこれを利用する磁気メモリ素子の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10490730B2 (en) 2017-09-20 2019-11-26 Kabushiki Kaisha Toshiba Magnetic memory device with increased storage density
WO2019077661A1 (fr) * 2017-10-16 2019-04-25 Tdk株式会社 Élément à magnétorésistance à effet tunnel, mémoire magnétique, mémoire intégrée et procédé de fabrication d'un élément à magnétorésistance à effet tunnel
JPWO2019077661A1 (ja) * 2017-10-16 2019-11-14 Ｔｄｋ株式会社 トンネル磁気抵抗効果素子、磁気メモリ、及び内蔵型メモリ
US10573449B2 (en) 2017-10-16 2020-02-25 Tdk Corporation Tunnel magnetoresistive effect element
JP2020088223A (ja) * 2018-11-28 2020-06-04 株式会社東芝 磁気記憶装置
US11991932B2 (en) 2020-07-17 2024-05-21 Taiwan Semiconductor Manufacturing Company Limited Post-treatment processes for ion beam etching of magnetic tunnel junction and structures formed by the same

Also Published As

Publication number Publication date
JP2015179694A (ja) 2015-10-08
US20160197268A1 (en) 2016-07-07
JP6139444B2 (ja) 2017-05-31

Similar Documents

Publication Publication Date Title
JP6139444B2 (ja) 磁気抵抗効果素子、磁気抵抗効果素子の製造方法及び磁気メモリ
US9508926B2 (en) Magnetoresistive effect element having an underlayer and a side wall layer that contain scandium
JP5214691B2 (ja) 磁気メモリ及びその製造方法
JP5665707B2 (ja) 磁気抵抗効果素子、磁気メモリ及び磁気抵抗効果素子の製造方法
JP5417367B2 (ja) 磁気メモリの製造方法
JP5148673B2 (ja) 磁気抵抗効果素子及び磁気メモリ
JP5865858B2 (ja) 磁気抵抗効果素子及び磁気抵抗効果素子の製造方法
US20070076471A1 (en) Storage element and memory
US10340311B2 (en) Magnetoresistive effect element with magnetic layers and magnetic memory
US8531875B2 (en) Magnetic memory
JP2010103303A (ja) 磁気抵抗素子及びその製造方法
JP2012099741A (ja) 磁気ランダムアクセスメモリ及びその製造方法
JP2012160671A (ja) 磁気ランダムアクセスメモリ及びその製造方法
US10573449B2 (en) Tunnel magnetoresistive effect element
TWI680596B (zh) 磁阻元件以及磁性記憶體
JP2020013921A (ja) 磁気トンネル接合素子、それを用いた磁気メモリおよび磁気トンネル接合素子の製造方法
US9620561B2 (en) Magnetoresistive element and manufacturing method thereof
KR102514506B1 (ko) 자기 메모리 장치 및 그 제조 방법
US8786038B2 (en) Semiconductor storage device and method of manufacturing the same
US9425388B2 (en) Magnetic element and method of manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15764118

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15764118

Country of ref document: EP

Kind code of ref document: A1