WO2015139348A1 - 读写接触式硬盘的磁头、硬盘设备及转移方法 - Google Patents

读写接触式硬盘的磁头、硬盘设备及转移方法 Download PDF

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Publication number
WO2015139348A1
WO2015139348A1 PCT/CN2014/075551 CN2014075551W WO2015139348A1 WO 2015139348 A1 WO2015139348 A1 WO 2015139348A1 CN 2014075551 W CN2014075551 W CN 2014075551W WO 2015139348 A1 WO2015139348 A1 WO 2015139348A1
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WIPO (PCT)
Prior art keywords
magnetic head
head slider
crystal material
dimensional atomic
layer
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Ceased
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PCT/CN2014/075551
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English (en)
French (fr)
Inventor
郑泉水
张首沫
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Tsinghua University
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Tsinghua University
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Priority to JP2016574314A priority Critical patent/JP6419225B2/ja
Publication of WO2015139348A1 publication Critical patent/WO2015139348A1/zh
Priority to US15/255,105 priority patent/US9978402B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
    • G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/188—Preparation by epitaxial growth
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/10—Structure or manufacture of housings or shields for heads
    • G11B5/102—Manufacture of housing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
    • G11B5/255—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features comprising means for protection against wear
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B5/581—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following maintaining desired contact or spacing by direct interaction of forces generated between heads or supports thereof and record carriers or supports thereof, e.g. attraction-repulsion interactions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B5/60—Fluid-dynamic spacing of heads from record-carriers
    • G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
    • G11B5/6082—Design of the air bearing surface
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers

Definitions

  • the present invention relates to the field of storage devices, and more particularly to a magnetic head structure, a disk body and a hard disk device capable of maintaining atomic contact with the disk body at all times during reading and writing; the present invention also relates to a magnetic head slider A method of transferring a two-dimensional atomic crystal layer. Background technique
  • a conventional hard disk drive generally uses a mode in which a magnetic head is flying on a disk, which maintains a certain distance from the disk and the magnetic head moves radially along the disk; the static (non-working) head It is in contact with the disc in a contact start and stop state.
  • Magnetic storage technology is a near-field technology.
  • the magnetic field strength decreases exponentially with the increase of the distance between the magnetic head and the magnetic medium.
  • the size of the magnetic storage unit is getting smaller and smaller, and the distance between the magnetic head reader and the magnetic medium is also smaller and smaller, so as to ensure the accuracy of quickly reading and writing magnetic information on the magnetic disk.
  • this reduction in distance is limited by the flying height of the head, the thickness of the diamond-like film on the surface of the head slider, and the thickness of the diamond-like protective film over the magnetic medium and the thickness of the lubricating layer.
  • the magnetic head slider in the magnetic disk is one of the core components of the magnetic head assembly, and has two functions. First, its surface has a certain pattern to form an air bearing with the disk surface, so as to stably fly above the disk surface and can follow the disk surface. The high and low changes realize pitch, flip and swing; on the other hand, it carries the conversion circuit for reading and writing the head and related data. Therefore, a reasonable head slider structure and topography is critical to the development of magnetic storage technology. As the storage capacity of hard disks increases day by day, the particles of the disk storage medium are increasingly reduced. In order to ensure the reliability of data access, the flying height of the magnetic head is also continuously reduced, and thus the volume and weight of the magnetic head slider are required to be smaller and smaller.
  • Patent ZL201010115892.1 discloses a contact type read/write hard disk device in which a magnetic head is covered with a material having a low friction atomic level flat surface and The disk body and the use of the atomic level flat surface van der Waals force support to reduce the distance between the magnetic head and the disk.
  • This patent utilizes the material of the lower surface of the magnetic head and the material of the upper surface of the disk.
  • the van der Waals flexible support acts instead of the traditional flight mode, reducing the distance between the head and the disk from the 2-5 nm range of the conventional flight mode to below 1 nm.
  • a low-friction, "contact” motion is formed by a single layer of atomic layer material wrapped around the lower surface of the head and the surface of the disk.
  • the "low friction” is not clearly defined, and is generally understood to still have little friction; when the material covering the atomic level flat surface of the magnetic head and the disk body is the same material, such as graphene, due to the existence of commonality
  • the magnetic head causes wear of the magnetic head and the surface material of the disk during the contact reading process, thereby causing damage to the disk.
  • the present invention provides a magnetic head for reading and writing a super-lubricated "atomic contact” type hard disk, which can always maintain “atomic contact” with the disk body during reading and writing and both are in “ultra-lubricated” " Status.
  • "Atomic contact” is defined as two layers of atomically leveled surfaces that are parallel to each other, with no or almost no other impurities between the two layers, and the atoms between the interfaces do not form chemical bonds, and the interfaces rely on van der Waals interactions.
  • the "ultra-lubricated” state refers to a state in which the frictional force is almost zero when the relative motion between the interfaces is relatively.
  • a magnetic head for reading and writing a contact type hard disk comprising a magnetic head slider, wherein a contact surface for engaging with the disk body on the magnetic head slider is a plane, and the magnetic head is slippery
  • the contact surface of the block is provided with at least one layer of atomic-level flat two-dimensional atomic crystal material.
  • the coating extends from the bottom surface of the head slider to the side thereof.
  • the two-dimensional atomic crystal material is graphene, boron nitride, BCN, fluorinated graphene, graphene oxide, MoS 2 , WS 2 , MoSe 2 , WSe 2 , MoSe 2 , WSe 2 , MoTe 2, WTe 2, ZrS 2 , ZrSe 2, NbSe 2, NbS 2, TaS 2, TiS 2, NiSe 2, GaSe, GaTe, InSe, Bi 2 Se 3, mica, BSCCO, Mo0 3, W0 3 , Ti0 2 Mn0 2 , V 2 0 5 , Ta0 3 , Ru0 2 , LaNb 2 0 7 , (Ca, Sr) 2 Nb 3 O 10 , Bi4Ti 3 0 12 , Ca 2 Ta 2 TiO 10 , Ni(OH) 2 , Eu (OH) 2 , one of the layered copper oxides.
  • the two-dimensional atomic crystal material of the magnetic head slider coating is graphene.
  • the size of the head slider is between O.lum-lOOOOum.
  • the size of the head slider is between 10 um and 1000 um.
  • the present invention also provides a hard disk device comprising the above-described magnetic head of the present application, further comprising a disk body, the disk body comprising a magnetic medium layer and at least one layer having an atomic level flat surface on the magnetic medium layer A protective layer composed of a two-dimensional atomic crystal material or a diamond-like nano film.
  • the disc body protective layer is a diamond-like film having an atomic level.
  • the two-dimensional atomic crystal material of the disc body protective layer is graphene, boron nitride, BCN, fluorinated graphene, graphene oxide, MoS 2 , WS 2 , MoSe 2 , WSe 2 , MoSe 2 , WSe 2, MoTe 2, WTe 2, ZrS 2, ZrSe 2, NbSe 2, NbS 2, TaS 2, TiS 2, NiSe 2, GaSe, GaTe, InSe, Bi 2 Se 3, mica, BSCCO, Mo0 3, W0 3 , Ti0 2 , Mn0 2 , V 2 0 5 , Ta0 3 , Ru0 2 , LaNb 2 0 7 , (Ca, Sr) 2 Nb 3 O 10 , Bi4Ti 3 0 12 , Ca 2 Ta 2 TiO 10 , Ni(OH 2 , Eu(OH) 2 , one of layered copper oxides.
  • the optional material range of the contact faces (ie, the cladding layer and the protective layer) where the magnetic head and the disk body contact each other includes a two-dimensional atomic crystal material, so when the materials selected by the two are the same, A common phenomenon may occur, and therefore, one aspect of the present application may be that the material of the magnetic head slider coating is different from the material of the disk protective layer.
  • the material of the head slider coating is the same as the material of the disk protective layer:
  • the magnetic head slider is provided with an actuator capable of changing the cell size of the two-dimensional atomic crystal material.
  • the actuator is a heat generating device, a piezoelectric device or a vibration device.
  • the actuator is a piezoelectric ceramic that causes the head slider to continuously vibrate laterally.
  • control device further comprises a detecting device, wherein the control device activates the actuator before the reader/writer operates; and during the reading and writing process, if the detecting device detects the two-dimensionality of the head slider coating When the atomic crystal material and the two-dimensional atomic crystal material of the disc protective layer are aligned, the actuator is activated.
  • the present invention also provides a method of transferring a two-dimensional atomic crystal material onto a magnetic head slider, comprising the following steps:
  • the surface to be bonded of the head slider is polished to an atomized level flat surface before the step c.
  • step c after the substrate is removed, a step of changing the cell size of the two-dimensional atomic crystal material layer is further included, and then the two-dimensional atomic crystal material layer is changed after the cell size is changed. Go to the head slider.
  • a step of changing the cell size of the two-dimensional atomic crystal material layer is further included.
  • the size of the unit cell of the two-dimensional atomic crystal material layer is changed by the deformation of the head slider.
  • the magnetic head slider is provided with a piezoelectric ceramic that allows the magnetic head slider to continuously vibrate laterally.
  • the present invention also provides a method of preparing a magnetic head slider, comprising the following steps:
  • the two-dimensional atomic crystal material grown on the substrate and the substrate as a whole are prepared into a head slider size.
  • the metal substrate is prepared to a head slider size prior to step a.
  • the metal substrate on which the two-dimensional atomic crystal material is grown is cut into a magnetic head slider size.
  • the design of the magnetic head slider in the present invention is different from the complicated surface pattern design of the conventional hard disk magnetic head slider.
  • the lower surface is a flat surface, and a two-dimensional atomic crystal material layer having an atomic level flat surface is disposed on the lower surface of the magnetic head slider, so that the magnetic head slider and the disk body are super-lubricated in an atomic contact state. gP, the friction between the two is almost zero. This achieves a super-lubricated atomic contact between the head slider and the disk when reading and writing, which is significantly different from the conventional air-suspended read/write technology.
  • the magnetic head slider When the magnetic head slider is in contact with the atom of the disk body, the distance between the magnetic head slider and the disk body can be greatly reduced, and at the same time, in view of the characteristics of the two-dimensional atomic crystal material layer, it can completely replace the DLC protective layer in the conventional magnetic head slider. cut back
  • the thickness of the protective layer further reduces the distance between the head slider and the disk body, and from another point of view, increases the storage density of the disk.
  • the magnetic head slider of the present invention has no complicated graphic surface and has a simple structure. The super-lubrication between the magnetic head and the disc body during operation enhances the stability of the operation with the magnetic disk, and the miniaturization of the hard disk device can be realized.
  • Fig. 1 is a view showing the structure of a magnetic head slider and a disk body in the hard disk device of the present invention.
  • Fig. 2 is a flow chart showing the transfer of a two-dimensional atomic crystal material layer in the present invention.
  • Fig. 3 is a view showing the structure of an embodiment of a magnetic head slider and a disk body.
  • Fig. 4 is a view showing the structure of another embodiment of the magnetic head slider and the disk body.
  • Figures 5a, 5b, and 5c show three different stacking modes between atomic leveling surface layers, respectively. detailed description
  • the present invention proposes a new magnetic head structure which changes the complex design of the lower surface of the magnetic head slider to a smooth design, keeping the bottom surface of the magnetic head slider parallel to the top surface of the disk body.
  • the bottom surface of the magnetic head slider can be polished by a known polishing technique to obtain an atomized level flat surface, and the bottom surface of the magnetic head slider is covered with a two-dimensional atomic crystal material (for example, graphene) transfer technique or growth technique.
  • a multilayer two-dimensional atomic crystal material such as graphene).
  • the coating may extend from the lower surface of the head slider to the side thereof to prevent the side of the head slider from scratching the disk. At the same time, the coating is extended to the side thereof in order to avoid large friction caused by the bonding of the dangling bonds of the coating edges to the dangling bonds of the surface of the disk.
  • the two When the head slider is in contact with the disk body atoms, the two are in an ultra-lubricated state, that is, the friction is almost zero, no wear or only slight wear. That is to say, when the hard disk is working, the bottom surface of the magnetic head slider and the top surface of the disk body can always maintain atomic contact without damaging the disk body and the magnetic head, thereby realizing the magnetic head slider and the disk body during reading and writing. contact. This greatly reduces the traditional flight distance, and the two-dimensional atomic crystal material (such as graphene) provided on the head slider can replace the traditional diamond-like protective film, thereby reducing the thickness of the protective film.
  • the two-dimensional atomic crystal material such as graphene
  • Fig. 1 is a view showing the structure of a magnetic head slider and a disk body in the hard disk device of the present invention.
  • the contact surface of the head slider 2 with the disk body 1 is a flat surface. This design simplifies the complex head slider graphics into one Plane.
  • Contact here is "atomic contact”.
  • “Atomic contact” is defined as two layers of atomically leveled surfaces that are parallel to each other. There are no other impurities between the two layers and the atoms between the interfaces do not form chemical bonds. There is only a contact form between the interfaces (Mandovah action).
  • Van der Waals' force mainly changes from the attracting state to the repulsion state.
  • the equilibrium state of attraction and repulsion is presented.
  • the "contact surface” herein is understood to mean the surface of the magnetic head slider 2 that is in atomic contact with the disk body 1.
  • the contact surface of the magnetic head slider 2 is provided with at least one cladding layer 3 composed of atomic-level flat two-dimensional atomic crystal materials, and the cladding layer 3 may be single crystal graphene or other two-dimensional atomic crystals. .
  • the above two-dimensional atomic crystal material refers to a two-dimensional material having a layered structure, and the material has only one or several atoms in the thickness direction. When the data is read, the head slider 2 and the disk body 1 are always in atomic contact.
  • the atomic-level flat surface of a two-dimensional atomic crystal material refers to one of the crystal planes of the material, and there is no atomic step.
  • the material may be a two-dimensional atomic crystal graphene, boron nitride, BCN, fluorinated graphite, graphene oxide, MoS 2, WS 2, MoSe 2, WSe 2, MoSe 2, WSe 2, MoTe 2, WTe 2, ZrS 2, ZrSe 2, NbSe 2, NbS 2, TaS 2, TiS 2, NiSe 2, GaSe, GaTe, InSe, Bi 2 Se 3, mica, BSCCO, Mo0 3, W0 3 , Ti0 2, Mn0 2, V 2 0 5 , Ta0 3 , Ru0 2 , LaNb 2 0 7 , (Ca, Sr) 2 Nb 3 O 10 , Bi 4 Ti 3 0 12 , Ca 2 Ta 2 TiO 10 , Ni(OH) 2 , Eu(OH) 2
  • a preferred embodiment of the magnetic head coating of the present invention employs graphene.
  • Graphene is a material of a single-layered sheet structure composed of carbon atoms. It is a planar film composed of a carbon atom and a sp2 hybrid orbital to form a hexagonal honeycomb crystal lattice. It is a two-dimensional material with a thickness of only one carbon atom. Graphene is currently the thinnest but hardest nanomaterial in the world.
  • the graphene layer or other two-dimensional atomic crystal material layer extends from the bottom surface of the magnetic head slider 2 to the side thereof. That is, a graphene layer or other two-dimensional atomic crystal material layer is provided on the side surface of the magnetic head slider 2. Simultaneously, The graphene layer or other two-dimensional atomic crystal material extends to the side thereof in order to avoid large friction caused by the bonding of the dangling bond at the edge of the graphene or other two-dimensional atomic crystal material to the dangling bond of the surface of the disk.
  • the feature size of the head slider 2 is designed to be between O.lum-lOOOum (length, width). At this time, the cover 3 also needs to be adjusted according to the size of the head slider.
  • the size mentioned above is 0.1 U m-1000um. Since the head slider 2 and the disk body 1 are always in atomic contact during operation, the head slider 2 generates a positive pressure with the disk body 1. In order to avoid a large pressure between the magnetic head slider 2 and the disk body 1 and wear the surface of the disk body, the size of the magnetic head slider 2 is designed to be 10 um - 1000 um, which is called a large-sized magnetic head slider, a graphene layer or Other two-dimensional atomic crystal material layers also need to be sized to correspond to the head slider.
  • the above coating can be carried out by chemical vapor deposition (CVD).
  • CVD chemical vapor deposition
  • the preparation of graphene by chemical vapor deposition uses organic gases (such as formazan, ethylene, etc.), liquids (such as ethanol) or solids (such as camphor, sucrose, etc.).
  • the main portion of the chemical vapor deposition apparatus for preparing graphene is an electric resistance furnace, a quartz tube as a reaction chamber, and ethanol (for example) as a carbon source, and a metal foil (e.g., copper foil) as a base.
  • the reaction solution is introduced into the reaction chamber through a capillary tube by a precision flow pump.
  • the carbon source decomposes the anti-atoms in the high temperature reaction zone and deposits on the metal substrate and gradually forms a continuous graphene film.
  • Figure 2 shows a technique for transferring a two-dimensional atomic crystal material onto a magnetic head slider using graphene as an example.
  • Step a growing single crystal graphene on the substrate; b, pressing a transfer substrate on the surface of the graphene, the transfer substrate is generally a polymer such as PMMA, PDMS, and a transfer matrix and graphene are formed.
  • the bonding layer has strong adhesion; c, the growth substrate is removed by a solution (such as a ferric chloride solution, etc.); then d, the transfer substrate to which the single crystal graphene is adhered is adhered to the magnetic head slider (target base).
  • the transfer substrate is covered on the bottom surface of the head slider and extends to the side thereof.
  • the bonding layer on the surface of the graphene and the transfer substrate are removed by an organic solution (e.g., acetone).
  • an organic solution e.g., acetone
  • a single crystal graphene layer having an atomic level flat surface is formed on the bottom surface and the side surface of the slider.
  • a method for growing a large-sized single crystal graphene is provided below: Synthesis of large-sized single crystal graphene ( ⁇ 5 mm) is carried out by chemical vapor deposition (CVD) in a low pressure environment using copper as a catalyst.
  • the mixed gas is argon, hydrogen and diluted formazan (500p.pm formazan is balanced under argon), formazan It is a carbon source for growing graphene.
  • a 25 um thick copper piece was washed with hydrochloric acid and an aqueous solution (HCL/H 2 0 ratio of 1:10), and then washed three times with isopropyl alcohol, followed by drying under nitrogen.
  • the dried copper sheets were placed in a CVD high temperature tube furnace with a diameter of 1 foot.
  • the entire tube furnace was evacuated for 30 minutes and pumped to a vacuum of 10 mTorr.
  • 300 sccm of pure nitrogen or a mixed gas of nitrogen and hydrogen was refilled into the quartz tube, and the quartz tube was heated for 25 minutes until the temperature reached 1070 ° C (temperature rise for the first 20 minutes, and stable for 5 minutes).
  • the diluted formazan gas and hydrogen are introduced into a quartz tube, and graphene growth is carried out at a temperature of 1070 ° C, wherein the molar ratio of hydrogen to formazan is 1320-8800, and the gas pressure ranges from 1 to 1000 mbr. Finally, the growth was terminated by quenching the quartz tube to room temperature (cooling rate was ⁇ 200 ° C/min).
  • a wet-etched copper substrate is used to dilute the grown large-scale single crystal graphite onto a large-sized magnetic head slider.
  • both surfaces of the copper sheet are grown with graphite thin, and a layer of PMMA is spin-coated on one side of the graphite thin surface and baked at 120 ° C for 2 minutes.
  • the other side of the sample was exposed to 0 2 Plasma for 60 minutes to remove the graphite thinning grown on the surface.
  • the copper sheet was etched using a copper etchant to obtain a PMMA/graphene film freely suspended on the surface of the copper etchant.
  • the PMMA/graphene film is cleaned with a mixture of HCL and deionized water (1:10), washed several times with deionized water, transferred to a large-sized magnetic head slider and the bottom surface and side surfaces of the magnetic head slider are wrapped. . After air drying, the PMMA is dissolved in acetone, and the substrate is rinsed with isopropyl alcohol, and finally the graphite is transferred from the copper substrate to the large-sized magnetic head slider.
  • the disk 1 in the hard disk is a medium for magnetic recording.
  • the substrate of the disk 1 is a glass disk or an aluminum disk having a super smooth surface (root mean square roughness of 0.2 nm), and has a plurality of plating layers on both sides thereof, and the data of the hard disk is stored at a thickness of about 30 nm.
  • a conventional disk disk body is provided with a diamond-like coating (DLC layer) having a thickness of about l-3 nm on the magnetic layer to protect the relatively soft magnetic layer from abrasion and corrosion, and the thickness on the DLC layer is A l-2nm lubricating layer to improve its wear resistance.
  • DLC layer diamond-like coating
  • the magnetic head slider of the present invention is provided with one or several layers of graphene layers or other two-dimensional atomic crystal material layers on the atomic contact surface with the disk body.
  • the contact surface of the head slider is in atomic contact with the surface of the disk. Gravity and vibration can cause changes in the atomic contact distance, but this design does not cause damage or disengagement in the atomic contact area.
  • a protective layer of the disk body 1 one way is to retain the conventional diamond-like carbon film 10, but go Remove the lubricating layer of the original diamond-like surface, refer to Figure 3.
  • the magnetic head slider 2 of the present invention is in atomic contact with the diamond-like film 10 having an atomic level flat surface on the disk body 1, it is in a super-lubricated state, gp, and the friction between the two is almost zero, showing no wear or slight wear.
  • Another way of the protective layer is a two-dimensional atomic crystal material having an atomic level flat surface.
  • the magnetic head slider 2 of the present invention When the magnetic head slider 2 of the present invention is different from the two-dimensional atomic crystal material on the disk body 1, it is in an ultra-lubricated state, S, and the friction between the two is almost zero, showing no wear or slight wear. However, when the magnetic head slider 2 of the present invention is the same as the two-dimensional atomic crystal material on the disk body 1, when the two contact faces rotate with each other, a commensurate phenomenon may occur, thereby destroying the super-lubricating state.
  • the magnetic head slider 2 and the material on the disk body 1 are simultaneously a graphene layer as an example. Directly depositing or transferring a graphene layer 11 having an atomic level flat surface on the magnetic medium layer.
  • the head slider 2 when reading data, the head slider 2 is in atomic contact with the surface of the disk body 1, when the upper surface of the disk body 1 is When the material of the lower surface of the magnetic head slider 2 is graphene, the upper surface of the disk body 1 is in an ultra-lubricated state when the lower surface of the magnetic head slider 2 is in non-common contact, that is, the upper and lower surfaces are in contact with each other during the contact movement. The friction is almost zero, achieving no wear or minor wear.
  • the hexagonal lattice structure within the multilayer graphene layer is fixed, however there may be many ways of stacking between layers.
  • the least energy way is the AB stack, as shown in Figure 5a.
  • the atoms represented by black dots and rings respectively form a layer of graphite.
  • half of the atoms are overlapped, and the other half are in the regular hexagon of another atom.
  • the center of the lattice is also a way of minimal local binding energy, where the upper and lower atomic positions are perfectly aligned.
  • the AA stacking method can be obtained by panning in the AB stack mode.
  • the potential energy fluctuation when the relative slip occurs between the layers is small, so that the frictional force is also smaller than the common state.
  • the slip between the layers is in a super-lubricated state, that is, the friction between them is almost zero, no wear or slight wear.
  • a preferred way is to arrange the two layers of graphene in a non-uniform manner so that the two are in a super-lubricated state, the gp, the frictional force is minimized, almost zero, and at the same time, there is no wear or Minor wear.
  • the head slider coating is the same two-dimensional atomic crystal material as the disk surface material, a commensurate state occurs during the movement of the two. In order to avoid such large friction due to the metric, it is necessary to process the two-dimensional atomic crystal material transferred on the head slider.
  • an actuator that can deform or rotate the magnetic head slider is provided in the magnetic head slider, as follows:
  • the head slider 2 is deformed by the heat generating element, so that the graphite is slightly stretched to form the final head slider 2a and the graphene layer 3a.
  • a deformation mechanism (such as a piezoelectric device) is mounted inside the magnetic head slider to deform the magnetic head slider, and the graphene layer adsorbed on the magnetic head slider forms a slight stretch with the magnetic head slider. Thereby changing the size of the graphene unit cell.
  • the graphene on the bottom surface of the magnetic head maintains a lattice mismatch with the upper surface of the disk body, that is, the non-co-excessive super-lubrication state. Therefore, the public contact is effectively avoided.
  • the lower surface of the magnetic head can be horizontally telescopically moved during the movement to form a lateral vibration, thereby avoiding the commensurate state of the lower surface of the magnetic head and the upper surface of the magnetic disk during the movement.
  • the piezoelectric device can also realize the lateral vibration of the magnetic head slider, thereby changing the lattice size of the graphene layer of the magnetic head at all times to avoid large friction caused by the commensurability.
  • the above stretching step may be performed at the time of transferring the graphene layer.
  • the unit cell size of the graphene layer may be changed by a method known in the art, and then the unit cell may be used.
  • the graphene layer after the change in size is bonded to the head slider. It is also possible to change the size of the graphene layer unit cell after obtaining the head slider to which the graphene layer is adsorbed.
  • the above-described step of stretching can also be performed at the time of reading data.
  • a control device is included, and the control device includes a detecting device (for example, detecting shear strength between the two); during the reading and writing process of the reader, if the detecting device detects the graphene layer and the disk of the magnetic head slider Between the body graphene layers
  • the actuator is activated to change the cell size of the graphene layer on the head slider until the incompatibility between the two is achieved to achieve real-time monitoring and adjustment during the reading and writing process.
  • the control device activates the actuator so that the magnetic head slider and the disk body are arranged in an incommensurable manner.
  • the present invention also provides a method of preparing a magnetic head slider, comprising the following steps:
  • the two-dimensional atomic crystal material grown on the growth substrate and the substrate as a whole are prepared into a magnetic head slider.
  • the metal substrate can be made into the size of the magnetic head slider before the step a.
  • the metal substrate on which the two-dimensional atomic crystal material is grown is cut into the size of the head slider.
  • the magnetic head slider prepared by the above method forms a certain lattice mismatch in the growth process because the two-dimensional atomic crystal material of the outermost surface of the magnetic head is different from the lattice constant of the base crystal grown thereon.
  • the two-dimensional crystal thus grown has a lattice mismatch with the corresponding two-dimensional crystal on the disk, thereby avoiding the occurrence of a commensurate phenomenon.
  • the present invention has the following advantages:
  • the atomic contact between the magnetic head and the magnetic disk in the state of ultra-lubrication no wear or slight wear is realized, the spacing between the magnetic head reader and the magnetic medium layer is greatly reduced, and the magnetic disk is correspondingly improved.
  • the storage density enables contact reading and writing to the hard disk.
  • the contact hard disk in the super-lubricated state can easily achieve extremely high speed and improve the data reading and writing speed of the hard disk.

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Abstract

本发明提供了一种读写接触式硬盘的磁头滑块与盘体的接触技术。磁头滑块上与盘体接触的接触面设有至少一层二维原子晶体，其结构为平面，并延伸至磁头滑块的侧面；盘体原子级平整，与磁头滑块接触的接触面为至少一层二维原子晶体或类金刚石纳米膜（DLC）。在读取数据时，所述磁头滑块和盘体之间始终保持原子接触。本发明的磁头滑块与盘体之间直接接触的二维原子晶体两层结构具有非共度性，并呈现超润滑状态，即两者之间的摩擦力几乎为零。磁头滑块与盘体的原子接触，大大降低磁头滑块与盘体之间的距离，且可完全取消传统磁头滑块中的DLC保护层，进一步降低了磁头滑块与盘体之间的距离，实现更高存储密度、更快存储和读取速度、以及更小型化的硬盘设备。

Description

说 明 书 读写接触式硬盘的磁头、 硬盘设备及转移方法
技术领域
本发明涉及存储设备领域， 更准确地说， 涉及一种读写时， 能与盘体始终 保持原子接触的磁头结构、盘体以及一种硬盘设备； 本发明还涉及一种向磁头 滑块上转移二维原子晶体层的方法。 背景技术
传统机械硬盘 （hard disk drive, 简称 HDD) 在工作时一般采用磁头在盘 体上飞行的模式，其与盘片保持一定的距离，且磁头沿盘片径向移动；静止（非 工作） 时磁头相对于盘片呈接触式启停状态。
磁存储技术是一种近场技术，读写磁信息时磁场强度随着磁头与磁介质之 间距离的增大呈现指数衰减。 目前， 磁存储单元的尺寸越来越小， 磁头读写器 与磁介质之间的距离也越来越小， 以保证快速读写磁盘上的磁信息的准确度。 但这种距离的减小受到磁头飞行高度、磁头滑块表面的类金刚石膜厚度以及磁 介质上方的类金刚石保护膜厚度和润滑层厚度等的限制
磁盘中磁头滑块作为磁头组件的核心部件之一， 具有两方面的作用， 一是 它的表面具有某种图形能与盘面形成气浮轴承，以稳定地飞在盘面上方且能随 着盘面的高低变化实现俯仰、翻转及摆动等； 另一方面， 它承载着读写磁头及 相关数据的转换电路。 因此， 合理的磁头滑块结构及形貌对磁存储技术的发展 至关重要。 随着硬盘存储容量与日俱增， 盘片存储介质的颗粒日益减小， 为了 保证数据存取的可靠性， 磁头的飞行高度也不断减小， 因而要求磁头滑块的体 积及重量越来越小。
除了传统的飞行模式硬盘之外， 中国专利 ZL201010115892.1 (发明名称； 一种硬盘设备）公开了一种接触式读写的硬盘设备， 其中利用具有低摩擦的原 子级平整表面的材料覆盖磁头和盘体以及利用该原子级平整表面间范德华力 支撑来降低磁头与盘体间距离。该专利利用磁头下表面材料与盘体上表面材料 之间的范德华柔性支撑作用代替传统的飞行模式，将磁头与盘体的间距从传统 飞行模式的 2-5nm范围降低至 lnm以下。 同时， 利用磁头下表面和盘体表面 包裹的单层原子层材料形成低摩擦、 "接触式"运动。 但是， 所述"低摩擦 "并没 有清晰定义，通常理解为仍然具有很小的摩擦； 在覆盖在磁头和盘体的原子级 平整表面的材料是同一种材料时， 例如石墨烯， 由于存在共度现象， 磁头在接 触式读取过程中会产生磁头和盘体表面材料的磨损， 从而导致磁盘损坏。 发明内容
为了解决现有技术中的问题， 本发明提供了一种读写超润滑"原子接触" 式硬盘的磁头， 在读写时， 能与盘体始终保持"原子接触"且二者处于"超润滑" 状态。 "原子接触"定义为两层原子级平整的表面相互平行， 两层界面之间没有 或几乎没有其他杂质， 并且界面之间原子不形成化学键， 界面之间依靠范德华 相互作用的接触形式。"超润滑"状态指的是界面之间相对运动时摩擦力几乎为 零的状态。
为了实现上述的目的，本发明的技术方案是：一种读写接触式硬盘的磁头， 包括磁头滑块，所述磁头滑块上用于和盘体配合的接触面为平面，所述磁头滑 块的接触面上设有至少一层由原子级平整的二维原子晶体材料构成的覆层，在 读取数据时，所述磁头滑块和盘体之间始终保持原子接触， 原子接触的平衡距 离在该原子接触中范德华力的作用势的最低点。
为了进一歩减小滑块与盘体的摩擦力，所述覆层由磁头滑块的底面延伸至 其侧面。
根据本发明的一个方案， 二维原子晶体材料为石墨烯、 氮化硼、 BCN、 氟 化石墨烯、 石墨烯氧化物、 MoS2、 WS2、 MoSe2、 WSe2、 MoSe2、 WSe2、 MoTe2、 WTe2、 ZrS2、 ZrSe2、 NbSe2、 NbS2、 TaS2、 TiS2、 NiSe2、 GaSe、 GaTe、 InSe、 Bi2Se3、 云母、 BSCCO、 Mo03、 W03、 Ti02、 Mn02、 V205、 Ta03、 Ru02、 LaNb207、 （Ca， Sr)2Nb3O10、 Bi4Ti3012、 Ca2Ta2 TiO10、 Ni(OH)2、 Eu(OH)2、 层状铜氧化物中的一种。
根据本发明的一个优选实施例，所述磁头滑块覆层的二维原子晶体材料为 石墨烯。 优选的是， 所述磁头滑块的尺寸在 O.lum-lOOOum之间。
优选的是， 所述磁头滑块的尺寸在 lOum-lOOOum之间。
本发明还提了一种硬盘设备， 包括本申请的上述的磁头， 还包括盘体， 所 述盘体包括磁介质层以及位于磁介质层上的具有原子级平整表面的至少一层 由一种二维原子晶体材料或类金刚石纳米膜构成的保护层。
优选的是， 所述盘体保护层为具有原子级平整的类金刚石膜。
优选的是，所述盘体保护层的二维原子晶体材料为石墨烯、氮化硼、 BCN、 氟化石墨烯、 石墨烯氧化物、 MoS2、 WS2、 MoSe2、 WSe2、 MoSe2、 WSe2、 MoTe2、 WTe2、 ZrS2、 ZrSe2、 NbSe2、 NbS2、 TaS2、 TiS2、 NiSe2、 GaSe、 GaTe、 InSe、 Bi2Se3、 云母、 BSCCO、 Mo03、 W03、 Ti02、 Mn02、 V205、 Ta03、 Ru02、 LaNb207、 （Ca， Sr)2Nb3O10、 Bi4Ti3012、 Ca2Ta2TiO10、 Ni(OH)2、 Eu(OH)2、 层状铜氧化物中的一种。
可以看到，在本申请中，磁头和盘体相互接触的接触面（即覆层和保护层） 的可选材料范围都包括二维原子晶体材料， 所以， 当两者选取的材料相同时， 可能会产生共度现象， 因此， 本申请的一种方案可以是磁头滑块覆层的材料与 盘体保护层的材料不同。在磁头滑块覆层的材料与盘体保护层的材料相同的情 况下：
优选的是，所述磁头滑块中设有能让二维原子晶体材料的晶胞尺寸发生改 变的执行机构。
优选的是， 所述执行机构为发热装置、 压电装置或振动装置。
优选的是， 所述执行机构为让磁头滑块持续横向振动的压电陶瓷。
优选的是， 还包括控制装置， 所述控制装置包括检测装置； 在读写器工作 之前， 控制装置启动执行机构； 且在读写过程中， 如果检测装置检测到磁头滑 块覆层的二维原子晶体材料与盘体保护层的二维原子晶体材料为公度排列时， 启动执行机构。
本发明还提供了一种向磁头滑块上转移二维原子晶体材料的方法，包括以 下歩骤：
a、 提供生长在基底上的二维原子晶体材料层；
b、 将转移基体涂在二维原子晶体材料层上， 并与二维原子晶体材料层 之间形成粘结层；
C、 将二维原子晶体材料层粘结到磁头滑块上， 形成滑块覆层；
d、 洗掉转移基体， 并去除粘结层， 得到具有二维原子晶体材料层的磁 头滑块。
优选的是， 在歩骤 c之前， 将磁头滑块的待粘结面抛光成原子级平整的平 面。
优选的是， 歩骤 c中， 将基底去除后， 还包括让二维原子晶体材料层的晶 胞尺寸发生改变的歩骤，然后将晶胞尺寸发生改变后的二维原子晶体材料层粘 结到磁头滑块上。
优选的是， 在歩骤 d后， 还包括让二维原子晶体材料层的晶胞尺寸发生改 变的歩骤。
优选的是， 通过磁头滑块的形变来改变二维原子晶体材料层晶胞的尺寸。 优选的是， 所述磁头滑块中设有可让磁头滑块持续横向振动的压电陶瓷。 本发明还提供了一种制备磁头滑块的方法， 包括以下歩骤：
a、 在原子级平整的金属基底上外延生长二维原子晶体材料， 该金属基底 与二维原子晶体材料晶格常数不同。
b、 将生长在基底上二维原子晶体材料与基底作为一个整体， 制备成磁头 滑块尺寸。
c、 将磁头滑块安置在磁头上。
优选的是， 在歩骤 a之前， 将金属基底制备成磁头滑块尺寸。
优选的是， 在歩骤 a之后， 将生长二维原子晶体材料的金属基底切割成磁 头滑块尺寸。
本发明中磁头滑块的设计不同于传统硬盘磁头滑块复杂的表面图形化设 计。其下表面为平面，在磁头滑块的下表面上设有具有原子级平整表面的二维 原子晶体材料层，可使磁头滑块与盘体之间在原子接触的状态下呈现超润滑状 态， gP， 两者之间的摩擦力几乎为零。 这就实现了读写时磁头滑块与盘体的超 润滑原子接触， 而这与传统中的空气悬浮式读写技术有着显著区别。磁头滑块 与盘体原子接触后， 可大大降低磁头滑块与盘体之间的距离， 同时， 鉴于二维 原子晶体材料层的特性， 其可完全取代传统磁头滑块中的 DLC保护层， 减少 保护层的厚度，进一歩降低了磁头滑块与盘体之间的距离，从另一个角度来说， 提高了磁盘的存储密度。 同时， 本发明磁头滑块没有复杂的图形化表面， 结构 简单。工作时磁头与盘体间处于超润滑状态增强了其与磁盘工作的稳定性， 可 实现硬盘设备的小型化。 附图说明
图 1示出了本发明硬盘设备中磁头滑块和盘体的结构示意图。
图 2示出了本发明中转移二维原子晶体材料层的流程示意图。
图 3示出了磁头滑块和盘体的一种实施方式的结构示意图。
图 4示出了磁头滑块和盘体的另一种实施方式的结构示意图。
图 5a、 5b、 5c分别示出了原子级平整表面层之间三种不同的堆垛方式。 具体实施方式
下面结合附图对本发明的技术方案作详尽的说明。
本发明提出了一种新的磁头结构，该技术将磁头滑块下表面复杂的设计改 变为平滑设计，将磁头滑块的底面与盘体顶面保持平行。可利用已知的抛光技 术对磁头滑块的底面进行抛光， 以获得原子级的平整表面， 再利用二维原子晶 体材料（例如石墨烯）转移技术或生长技术使磁头滑块底面覆有一层或多层二 维原子晶体材料（例如石墨烯）。该覆层可由磁头滑块的下表面延伸至其侧面， 以防止磁头滑块的侧面划伤盘体。 同时， 覆层延伸至其侧面是为了避免覆层边 缘的悬键与盘体表面的悬键结合成键而导致的较大摩擦。
当磁头滑块与盘体原子接触时， 二者之间处于超润滑状态， 即摩擦力几乎 为零， 无磨损或只有微小的磨损存在。 也就是说， 在硬盘工作的时候， 磁头滑 块的底面与盘体的顶面可以始终保持原子接触， 而不会损坏盘体和磁头， 这就 实现了读写时磁头滑块与盘体的接触。从而大幅度降低传统的飞行距离， 同时 磁头滑块上设有的二维原子晶体材料（例如石墨烯）可代替传统的类金刚石保 护膜， 从而减少了保护膜的厚度。
图 1示出了本发明硬盘设备中磁头滑块和盘体的结构示意图。磁头滑块 2 与盘体 1配合的接触面为一平面。这种设计将复杂的磁头滑块图形简化成为一 个平面。 此处接触为"原子接触"。 "原子接触"定义为两层原子级平整的表面相 互平行， 两层界面之间没有其他杂质并且界面之间的原子不形成化学键， 界面 之间只存在分子间作用 （范德华作用） 的接触形式。
两个原子级平整的表面在互相接触的过程中， 随着距离的减小， 范德华作 用力主要从吸引状态转化成排斥状态， 在其中某一个距离，会呈现吸引和排斥 的平衡状态， 平衡状态时范德华力的作用势最低， 这属于本领域的公知常识。
此处的 "接触面"应该理解为磁头滑块 2与盘体 1原子接触的表面。所述磁 头滑块 2 的接触面上设有至少一层由原子级平整的二维原子晶体材料构成的 覆层 3， 该覆层 3可以是单晶石墨烯， 也可以是其他二维原子晶体。 以上所说 的二维原子晶体材料是指具有层状结构的二维材料，材料的厚度方向只含有一 个或几个原子。 在读取数据时， 所述磁头滑块 2和盘体 1始终保持原子接触。 二维原子晶体材料（例如石墨烯）的原子级平整表面指的是材料的一个晶向面 中， 没有原子级台阶。 所述二维原子晶体材料可以为石墨烯、 氮化硼、 BCN、 氟化石墨烯、 石墨烯氧化物、 MoS2、 WS2、 MoSe2、 WSe2、 MoSe2、 WSe2、 MoTe2、 WTe2、 ZrS2、 ZrSe2、 NbSe2、 NbS2、 TaS2、 TiS2、 NiSe2、 GaSe、 GaTe、 InSe、 Bi2Se3、 云母、 BSCCO、 Mo03、 W03、 Ti02、 Mn02、 V205、 Ta03、 Ru02、 LaNb207、 （Ca， Sr)2Nb3O10、 Bi4Ti3012、 Ca2Ta2TiO10、 Ni(OH)2、 Eu(OH)2、 层状铜氧化物中的一种。
本发明磁头覆层的优选实施例是采用石墨烯（Graphene) 。 石墨烯是一种 由碳原子构成的单层片状结构的材料。是一种由碳原子以 sp2杂化轨道组成六 角型呈蜂巢晶格的平面薄膜， 是一种只有一个碳原子厚度的二维材料。石墨烯 目前是世上最薄却也是最坚硬的纳米材料。将上述结构的磁头滑块应用到硬盘 中后， 其与盘体的表面材料原子接触时会呈现超润滑状态， 即二者之间的摩擦 力几乎为零， 呈现无磨损或微小磨损。 这就使得， 在硬盘工作的时候， 可让磁 头滑块的底面与盘体的表面可以始终保持原子接触， 而不会损坏盘体和磁头， 即实现了读写时磁头滑块与盘体的接触。
在读取数据时，为了防止磁头滑块的侧面划伤盘体从而对超润滑状态产生 影响，所述石墨烯层或其他二维原子晶体材料层由磁头滑块 2的底面延伸至其 侧面，即在磁头滑块 2的侧面设有石墨烯层或其他二维原子晶体材料层。同时， 石墨烯层或其他二维原子晶体材料延伸至其侧面也是为了避免石墨烯或其它 二维原子晶体材料边缘的悬键与盘体表面的悬键结合成键而导致的较大摩擦。
磁头滑块 2的特征尺寸设计在 O.lum-lOOOum (长、 宽） 之间。 此时覆层 3 也需要根据磁头滑块的尺寸进行调整。 如上面提到的尺寸 0.1Um-1000um。 由于磁头滑块 2与盘体 1在工作时是始终原子接触的，因此磁头滑块 2会与盘 体 1产生正压力。为了避免磁头滑块 2与盘体 1之间产生较大的压强而磨损盘 体的表面， 设计磁头滑块 2 的尺寸为 10um-1000um， 此时称为大尺寸磁头滑 块， 石墨烯层或其它二维原子晶体材料层也需要做成与磁头滑块相应的尺寸。
上述的覆层可以通过化学气相沉积 （CVD ) 的方式来进行。 以制备石墨 烯为例， 化学气相沉积法制备石墨烯多采用有机气体（如甲垸、 乙烯等） 、 液 体（如乙醇）或固态（如樟脑， 蔗糖等） 。 用于制备石墨烯的化学气相沉积装 置的主体部分为电阻炉， 以石英管为反应室， 以乙醇（作为例子）为碳源， 以 金属箔（例如铜箔）为基底。 反应溶液在精密流量泵的带动下通过毛细管输入 反应室中。碳源在高温反应区中分解出反原子并在金属基底上沉积并逐渐形成 连续的石墨烯薄膜。 本发明中需要将生长成的大尺度石墨烯转移到磁头滑块 上， 实现在磁头滑块表面的原子级平整表面。
图 2以石墨烯为例，介绍了一种将二维原子晶体材料转移到磁头滑块上的 技术。 歩骤 a、 将单晶石墨烯生长在基体上； b、 用一块转印基体压在石墨烯 的表面， 转印基体一般为 PMMA、 PDMS等聚合物， 转印基体与石墨烯之间 形成的粘结层具有较强的粘附力； c、 再将生长基体用溶液 （如三氯化铁溶液 等） 去除； 之后 d、 将粘附有单晶石墨烯的转印基体粘连到磁头滑块 （目标基 体） 。 将转印基体覆盖磁头滑块底面并延伸至其侧面。 进行粘合后， 再用有机 溶液（如丙酮等）将在石墨烯表面的粘结层、 转印基体去除。 在滑块底面及部 分侧面上形成具有原子级平整表面的单晶石墨烯层。
针对之前提到的尺寸在 lOum-lOOOum之间的大尺寸磁头滑块，需要生长、 转移大尺寸的二维原子晶体材料， 以生长大尺寸单晶石墨烯为例。下面提供一 种大尺寸单晶石墨烯的生长方法： 大尺寸单晶石墨烯（〜5mm)的合成是以铜 作为催化剂， 在低压的环境下进行化学气相沉积 （CVD ) 。 其中通入的混合 气体为氩气、 氢气以及稀释的甲垸（500p.p.m甲垸平衡于氩气环境下） ， 甲垸 是生长石墨烯的碳源。首先将 25um厚的铜片用盐酸与水溶液（HCL/H20比例 为 1:10)进行清洗后再用异丙醇进行三次冲洗， 然后在氮气下干燥。干燥后的 铜片放置在 CVD的高温管式炉中， 反应的石英管直径为 1英尺。 整个管式炉 抽气 30分钟， 抽至 lOmTorr真空环境。 之后再在石英管中重新冲入 300sccm 的纯氮气或氮气与氢气的混合气体，加热石英管 25min至温度达到 1070°C (前 20分钟升温， 后 5分钟稳定） 。 接下来将稀释的甲垸气体与氢气通入石英管 中， 在 1070 °C温度下进行石墨烯生长， 其中氢气与甲垸的摩尔比例为 1320-8800,气压的取值范围为 l-1000mbr。最后通过将石英管淬火至室温来结 束生长 （冷却的速率为〜 200°C/min) 。
下面为一种大尺寸单晶石墨烯转移的方法：采用湿法腐蚀铜基底的方法将 生长的大尺度单晶石墨稀转移到大尺寸磁头滑块上。在生长过程中，铜片的两 个表面都会生长石墨稀， 在一侧的石墨稀表面上旋涂上一层 PMMA, 在 120 °C下烘烤 2分钟。样品的另一面暴露在 02 Plasma持续 60分钟去除生长在该面 的石墨稀。之后， 利用铜腐蚀剂将铜片腐蚀， 得到一个自由悬浮在铜腐蚀剂表 面的 PMMA/graphene薄膜。 将 PMMA/graphene薄膜用 HCL与去离子水的混 合液（1 :10)清洗， 再用去离子水进行多次清洗后转移到大尺寸磁头滑块并将 磁头滑块的底面和侧表面包住。 经过空气干燥后， 将 PMMA用丙酮溶解， 再 将基底用异丙醇进行冲洗，最后就可以将石墨稀从铜基底转移到大尺寸磁头滑 块上了。
硬盘中的盘体 1是磁记录的媒介。盘体 1的基体是表面超级平整（均方根 粗糙度为 0.2nm) 的玻璃盘片或铝盘片， 在其两侧表面均具有多个镀层， 硬盘 的数据存储在厚度约为 30 nm 的磁性层内， 传统的磁盘盘体在磁性层上设有 厚度约 l-3nm 的类金刚石涂层（DLC层）来保护相对较软的磁性层免受磨损 和腐蚀， 在 DLC层上为厚度为 l-2nm的润滑层来提高其抗磨性。
本发明中的磁头滑块，在与盘体的原子接触面上设有一层或者几层石墨烯 层或其他二维原子晶体材料层。在硬盘工作时，磁头滑块的接触面与盘体的表 面保持原子接触。重力和振动会造成原子接触距离发生改变，但本设计不会导 致原子接触区的损伤或脱离接触。
作为盘体 1 的保护层， 一种方式是保留传统的类金刚石碳膜 10， 但是去 掉原有类金刚石表面的润滑层， 参考图 3。 本发明的磁头滑块 2与盘体 1上面 具有原子级平整表面的类金刚石膜 10原子接触时， 处于超润滑状态， gp， 二 者之间的摩擦力几乎为零， 呈现无磨损或微小磨损。该保护层另一种方式是具 有原子级平整表面的二维原子晶体材料。本发明的磁头滑块 2与盘体 1上面的 二维原子晶体材料不同时，处于超润滑状态， S ,二者之间的摩擦力几乎为零， 呈现无磨损或微小磨损。但是， 当本发明的磁头滑块 2与盘体 1上面的二维原 子晶体材料相同时， 在两个接触面相互转动时， 可能会出现公度现象， 从而破 坏超润滑状态。
其中， 以磁头滑块 2与盘体 1上面的材料同时为石墨烯层为例。在磁介质 层上直接沉积或转移具有原子级平整表面的石墨烯层 11， 参考图 4，在读取数 据时， 磁头滑块 2与盘体 1的表面原子接触， 当盘体 1的上表面与磁头滑块 2 的下表面材料都为石墨烯时， 盘体 1的上表面与磁头滑块 2的下表面在非公 度接触时处在超润滑状态，也就是上下表面在接触运动过程中的摩擦力几乎为 零， 实现无磨损或微小磨损。
多层石墨烯层内的六方晶格结构是固定的，然而层与层之间的堆垛方式可 以有很多种。 其中能量最低的方式是 AB堆垛， 如图 5a所示。 图中， 黑点和 圆环表示的原子分别各自构成一层石墨片， 在这种 AB堆垛的方式下， 上下有 一半的原子位置重合， 其余一半原子落在另一层原子的正六边形晶格的中心。 除 AB堆垛外， 如图 5b所示， AA堆垛也是一个局部结合能极小的方式， 此时 上下原子位置完全对齐。 AA堆垛方式可由 AB堆垛方式平移得到。 如果将上 下两层原子作相对旋转， 如图 5c， 则上下两层的晶格取向将失配， 除非转到 60度的整数倍时， 此时上下原子层间的相互作用此消彼长， 上下层平移时层 间结合势能的上下波动会被抑制， 呈现出较平缓的势能面。这种情况称为非公 度 (incommensurate) 的排歹 lj， 而 AB、 AA堆噪则是公度 (commensurate) 的 界面。 故， 对于单晶石墨而言， 层间堆垛特性对于其层间的摩擦力会有影响， 即超润滑状态消失。 如前所述， 在非公度状态下， 层间发生相对滑移时的势能 起伏较小， 因此导致摩擦力相比于公度状态也较小。在非公度接触时， 层间发 生滑移时处于结构超润滑状态， 即之间的摩擦力几乎为零， 无磨损或存在微小 磨损。 针对本发明的技术方案， 优选的方式是使两层石墨烯之间呈非公度排列， 使二者之间处于超润滑状态， gp， 摩擦力达到最小， 几乎为零， 同时呈现无磨 损或微小磨损。
当磁头滑块覆层与磁盘表面材料为相同二维原子晶体材料时，在两者运动 的过程中会产生公度状态。为了避免这种由于公度带来的较大摩擦， 需要对转 移在磁头滑块上的二维原子晶体材料进行处理。 以磁头滑块覆层是石墨烯为 例，在磁头滑块中设置一个能让磁头滑块发生形变或者旋转的执行机构， 具体 如下：
1 ) 在磁头滑块内部安装加热装置 （发热元件） ， 能够使磁头滑块发生形 变， 同时吸附在磁头滑块上的石墨烯也会跟随滑块形成微小的拉伸， 从而改变 石墨烯晶胞的尺寸。这样磁头滑块上的石墨烯由于拉伸就会与盘体的上表面一 直保持晶格失配的状态， 即非公度超润滑状态， 因此可有效避免公度接触。 图
1给出了变化的示意图， 磁头滑块 2在发热元件的作用下发生形变， 从而使石 墨烯发生微小的拉伸， 形成了最终的磁头滑块 2a和石墨烯层 3a。
2) 在磁头滑块的内部安装有形变机械装置 （如压电装置等） ， 能够使磁 头滑块发生形变，同时吸附在磁头滑块的石墨烯层随着磁头滑块形成微小的拉 伸， 从而改变石墨烯晶胞的尺寸。这样磁头底面上的石墨烯则会与盘体的上表 面一直保持晶格失配的状态， 即非共度超润滑状态。 因此有效的避免了公度接 触。例如在磁头滑块中增加压电陶瓷， 可在运动过程中始终使磁头下表面进行 横向伸缩运动， 形成横向振动， 从而避免了磁头下表面与磁盘上表面在运动过 程中的公度状态。 同时该压电装置也可以实现磁头滑块的横向振动， 从而时刻 改变磁头石墨烯层的晶格尺寸从而避免公度带来的较大摩擦。
上述进行拉伸的歩骤， 可以是在转移石墨烯层的时候进行， 例如可以在去 除生长基底之后， 利用现有技术中已知的方法来改变石墨烯层的晶胞尺寸， 然 后将晶胞尺寸发生改变后的石墨烯层粘结到磁头滑块上。也可以在得到吸附有 石墨烯层的磁头滑块后再改变石墨烯层晶胞的尺寸。
上述进行拉伸的歩骤也可以在读取数据的时候执行。此时包括一个控制装 置， 所述控制装置包括检测装置（例如检测二者之间的剪切强度） ； 在读写器 的读写过程中，如果检测装置检测到磁头滑块石墨烯层与盘体石墨烯层之间为 公度排列时， 则启动执行机构来改变磁头滑块上石墨烯层的晶胞尺寸， 直至二 者之间为非公度排列， 以实现在读写过程中的实时监测调整。当然也可以是在 读写器工作之前， 控制装置启动执行机构， 使磁头滑块与盘体之间为非公度排 列。
为了避免公度现象， 本发明还提供一种制备磁头滑块的方法，包括以下歩 骤：
a、 在原子级平整的金属生长基底上外延生长二维原子晶体材料， 该金属 基底与二维原子晶体材料的晶格常数不同；
b、 将生长在生长基底上二维原子晶体材料与基底作为一个整体， 制备成 磁头滑块。
根据本发明的制备磁头滑块的方法， 在歩骤 a之前， 可以将金属基底制备 成磁头滑块的尺寸。
根据本发明的制备磁头滑块的方法， 在歩骤 a之后， 将生长二维原子晶体 材料的金属基底切割成磁头滑块的尺寸。
以上述方法制备出的磁头滑块，由于磁头最外表面的二维原子晶体材料与 其生长的基底晶体晶格常数不同， 因此会在生长过程中形成一定的晶格失配。 这样生长出来的二维晶体已经与盘体上相应的二维晶体存在晶格失配，从而避 免公度现象的发生。
通过上述的技术方案， 本发明具有以下优点：
1、简化了传统磁头滑块复杂的设计方案， 实现平面磁头滑块设计简单化。
2、 根据非公度结构超润滑原理， 实现磁头与磁盘在超润滑， 无磨损或微 小磨损状态下的原子接触读写， 大大降低磁头读写器和磁介质层的间距， 相应 地提高了磁盘的存储密度， 能够实现对硬盘的接触式读写。
3、 处于超润滑状态的接触硬盘可以轻易实现极高转速， 提高硬盘数据读 写速度。
4、 可以很好的解决传统硬盘在、 防震、 防冲击等方面的缺陷， 大大提高 硬盘的稳定性。
5、 由于设计的简单性， 硬盘工作的稳定性与存储量的大幅提高， 在保证 现有的存储容量的前提下， 可以大幅度较少硬盘的体积。 本发明已通过优选的实施方式进行了详尽的说明。然而，通过对前文的研 读，对各实施方式的变化和增加也是本领域的一般技术人员所显而易见的。 申 请人的意图是所有这些变化和增加都落在了本发明权利要求所保护的范围中。
相似的编号通篇指代相似的元件。为清晰起见，在附图中可能有将某些线、 层、 元件、 部件或特征放大的情况。
本文中使用的术语仅为对具体的实施例加以说明，其并非意在对本发明进 行限制。 除非另有定义， 本文中使用的所有术语 （包括技术术语和科学术语） 均与本发明所属领域的一般技术人员的理解相同。

Claims

权 利 要 求书
1. 一种读写接触式硬盘的磁头， 包括磁头滑块， 其特征在于： 所述磁头 滑块上用于与盘体配合的接触面为平面，所述磁头滑块的接触面上设有至少一 层由原子级平整的二维原子晶体材料构成的覆层。
2. 根据权利要求 1所述的磁头， 其特征在于： 所述磁头滑块的覆层延伸 至磁头滑块的侧面。
3. 根据权利要求 1或 2所述的磁头， 其特征在于： 所述二维原子晶体材 料为石墨烯、氮化硼、 BCN、氟化石墨烯、石墨烯氧化物、 MoS2、 WS2、 MoSe2、 WSe2、 MoSe2、 WSe2、 MoTe2、 WTe2、 ZrS2、 ZrSe2、 NbSe2、 NbS2、 TaS2、 TiS2、 NiSe2、 GaSe、 GaTe、 InSe、 Bi2Se3、 云母、 BSCCO、 Mo03、 W03、 Ti02、 Mn02、 V205、 Ta03、 Ru02、 LaNb207、 （Ca， Sr)2Nb3O10、 Bi4Ti3012、 Ca2Ta2TiOi0 Ni(OH)2、 Eu(OH)2、 层状铜氧化物中的一种。
4. 根据权利要求 3所述的磁头， 其特征在于： 所述二维原子晶体材料为 石墨烯。
5. 根据权利要求 3 所述的磁头， 其特征在于： 所述磁头滑块的尺寸在 O.lum-lOOOum之间。
6. 根据权利要求 5 所述的磁头， 其特征在于： 所述磁头滑块的尺寸在 lOum-lOOOum之间。
7. 一种硬盘设备， 包括如权利要求 1-6任一项所述的磁头， 其特征在于： 还包括盘体，所述盘体包括磁介质层以及位于磁介质层上的具有原子级平整表 面的至少一层由二维原子晶体材料或类金刚石纳米膜构成的保护层。
8. 根据权利要求 7所述的硬盘设备， 其特征在于： 所述盘体的保护层为 具有原子级平整的类金刚石纳米膜。
9. 根据权利要求 7所述的硬盘设备， 其特征在于： 所述保护层的二维原 子晶体材料为石墨烯、氮化硼、 BCN、氟化石墨烯、石墨烯氧化物、 MoS2、 WS2、 MoSe2、 WSe2、 MoTe2、 WTe2、 ZrS2、 ZrSe2、 NbSe2、 NbS2、 TaS2、 TiS2、 NiSe2、 GaSe、 GaTe、 InSe、 Bi2Se3、 云母、 BSCCO、 Mo03、 W03、 Ti02、 Mn02、 V205、 Ta03、 Ru02、 LaNb207、 （Ca， Sr)2Nb3O10、 ΒΪ4 012、 Ca2Ta2TiO10、 Ni(OH)2、 Eu(OH)2、 层状铜氧化物中的一种。
10. 根据权利要求 7所述的硬盘设备， 其特征在于： 在读取数据时， 所述 磁头滑块和盘体之间始终保持范德华相互作用下的原子接触，原子接触的平衡 距离在该原子接触中范德华力的作用势的最低点。
11. 根据权利要求 9所述的硬盘设备， 其特征在于： 所述磁头滑块覆层的 材料与盘体保护层的材料不同。
12. 根据权利要求 9所述的硬盘设备， 其特征在于： 所述磁头滑块覆层的 材料与盘体保护层的材料相同。
13. 根据权利要求 12所述的硬盘设备， 其特征在于： 所述磁头滑块中设 有能让二维原子晶体材料的晶胞尺寸发生改变的执行机构。
14. 根据权利要求 13所述的硬盘设备， 其特征在于： 所述执行机构为发 热装置、 压电装置或振动装置。
15. 根据权利要求 14所述的硬盘设备， 其特征在于： 所述执行机构为让 磁头滑块持续横向振动的压电陶瓷。
16. 根据权利要求 14所述的硬盘设备， 其特征在于： 还包括控制装置， 所述控制装置包括检测装置； 在读写器工作之前， 控制装置启动执行机构； 且 在读写过程中，如果检测装置检测到磁头滑块二维原子晶体材料与盘体二维原 子晶体材料为公度排列时， 启动执行机构。
17. 一种向磁头滑块上转移二维原子晶体材料的方法， 包括以下步骤： a、 提供在生长基底上的二维原子晶体材料层；
b、 将转印基体涂在二维原子晶体材料层上， 并与二维原子晶体材料层之 间形成粘结层；
c、 去除生长基体；
d、 将二维原子晶体材料层粘结到磁头滑块上， 去除转移基体， 并去除粘 结层， 形成滑块覆层， 得到具有二维原子晶体材料覆层的磁头滑块。
18. 根据权利要求 17所述的方法， 其特征在于： 在步骤 d之前， 将磁头 滑块的待粘结面抛光成原子级平整的平面。
19. 根据权利要求 17所述的方法， 其特征在于： 步骤 c中， 将生长基底 去除后， 还包括让二维原子晶体材料层的晶胞尺寸发生改变的步骤， 然后将晶 胞尺寸发生改变后的二维原子晶体材料层粘结到磁头滑块上。
20. 根据权利要求 17所述的方法， 其特征在于： 在步骤 d后， 还包括让 二维原子晶体材料层的晶胞尺寸发生改变的步骤。
21. 根据权利要求 20所述的方法， 其特征在于： 通过磁头滑块的形变来 改变二维原子晶体材料层晶胞的尺寸。
22. 根据权利要求 21所述的方法， 其特征在于： 所述磁头滑块中设有可 让磁头滑块持续横向振动的压电陶瓷。
23. 一种制备磁头滑块的方法， 包括以下步骤：
a、 在原子级平整的金属基底上外延生长二维原子晶体材料， 该金属基底 与二维原子晶体材料的晶格常数不同；
b、 将生长在基底上的二维原子晶体材料与基底作为一个整体， 制备成磁 头滑块。
24. 根据权利要求 23所述的方法， 其特征在于： 在步骤 a之前， 将金属 基底切割成磁头滑块的尺寸。
25. 根据权利要求 23所述的方法， 其特征在于： 在步骤 a之后， 将生长 二维原子晶体材料的金属基底切割成磁头滑块的尺寸。
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