WO2015135350A1 - 反应腔室以及等离子体加工设备 - Google Patents

反应腔室以及等离子体加工设备 Download PDF

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Publication number
WO2015135350A1
WO2015135350A1 PCT/CN2014/093458 CN2014093458W WO2015135350A1 WO 2015135350 A1 WO2015135350 A1 WO 2015135350A1 CN 2014093458 W CN2014093458 W CN 2014093458W WO 2015135350 A1 WO2015135350 A1 WO 2015135350A1
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Prior art keywords
reaction chamber
holes
strip
shaped
annular baffle
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PCT/CN2014/093458
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English (en)
French (fr)
Inventor
彭宇霖
邢涛
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北京北方微电子基地设备工艺研究中心有限责任公司
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Publication of WO2015135350A1 publication Critical patent/WO2015135350A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to the field of semiconductor processing technology, and in particular to a reaction chamber and a plasma processing apparatus.
  • etching uniformity is one of the main factors affecting product quality, and after entering the 32 to 22 nm technology generation, the etching process is uniform to the etching.
  • the requirements for sex are getting higher and higher, especially when entering the technology generation below 22nm, it is required to have a large gas flow rate under the premise of low chamber pressure in the reaction chamber, which requires optimization of the structural design of the reaction chamber. To achieve the above goals.
  • the plasma processing apparatus includes a reaction chamber 4 in which an electrostatic chuck 7 and a susceptor 8 for supporting the electrostatic chuck 7 are provided, and the substrate 5 is processed by a process.
  • the assembly 6 is fixed on the electrostatic chuck 7; the dielectric window 1 is fixed to the top of the reaction chamber 4 by the adjustment bracket 2, and an air inlet 11 is provided at a central position of the dielectric window 1 for the process gas to flow into the reaction chamber
  • an air outlet 41 is provided for the gas after the etching reaction to exit the reaction chamber 4.
  • a lining 3 is provided in the reaction chamber 4 between the dielectric window 1 and the process component 6, which is disposed around the inner side wall of the reaction chamber 4 for confining the plasma therein. In a specific area, it acts to limit the distribution and shielding of the plasma.
  • an annular baffle 31 is provided at the bottom end of the inner liner 3.
  • a plurality of through holes 311 are formed in the annular baffle 31 at intervals to allow gas to pass through the etching reaction.
  • the through holes 311 may be circular holes or square holes, as shown in FIGS. 3A and 3B.
  • the through holes 311 on the annular baffle 31 all belong to the "dot" through holes, the interval between such "dot” through holes (ie, the area on the annular baffle 31 where the through holes 311 are not provided)
  • the gas after the etching reaction is greatly blocked, thereby causing a large chamber pressure of the reaction chamber, and the flow rate of the gas after the etching reaction through the through hole 311 is small, thereby failing to satisfy the reaction chamber.
  • Under the premise of low chamber pressure it has a large gas flow requirement at the same time.
  • the above blocking effect also has a certain adverse effect on the symmetry and uniformity of the plasma distribution.
  • the present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a reaction chamber and a plasma processing apparatus which can satisfy not only the pressure of the chamber of the reaction chamber but also the lower pressure of the chamber. Larger gas flow requirements, but also increase plasma distribution symmetry and uniformity.
  • a reaction chamber comprising a carrier disposed inside the reaction chamber, and an upper liner surrounding an upper portion of the inner wall of the reaction chamber, in the upper portion
  • the bottom end of the liner is provided with an annular baffle surrounding the inner side wall of the reaction chamber and the carrying device, and a plurality of strips extending through the thickness thereof are evenly distributed on the upper surface of the annular baffle Through hole.
  • the plurality of strip-shaped through holes are evenly divided into a plurality of sets of annular through-hole groups, each set of annular through-hole groups being a ring and including a circumferential interval along the annular baffle a plurality of strip-shaped through holes; and the plurality of sets of annular through-hole groups are nested in a radial direction of the annular baffle and spaced apart from each other by a distance.
  • one of the two sets of through holes is adjacent to the two strips
  • the spacing between the holes is staggered with the spacing between adjacent two strip-shaped through holes in the other of them.
  • the projected shape of the strip-shaped through holes on the upper surface of the annular baffle is an elongated shape, and a center line in the longitudinal direction of the elongated shape extends in a radial direction of the annular baffle; A plurality of the strip-shaped through holes are spaced apart along a circumferential direction of the annular baffle.
  • the angle between the center lines in the longitudinal direction of the adjacent two elongated strips is 3 to 4 degrees.
  • the elongated strip has a width of 8 to 12 cm.
  • the interval between the adjacent two strip-shaped through holes has a minimum width in the circumferential direction of the annular baffle of 1 to 2 cm.
  • the interval between adjacent two strip-shaped through holes has a width of 1 to 2 cm.
  • the width between the adjacent two sets of through holes is 1-2 cm.
  • reaction chamber further comprises a lower liner covering a lower portion of the inner side wall of the reaction chamber and a bottom portion of the reaction chamber.
  • the carrying device comprises a chuck for carrying the workpiece to be processed and a base for supporting the chuck; a base support member is disposed in the reaction chamber, and one end of the base support member is The reaction chamber is fixedly connected; the other end of the base support is fixedly connected to the base; and a spoiler is disposed on the base support, the spoiler covers the base An upper surface and two side surfaces of the support member, and two lower ends of the spoiler respectively corresponding to the two side surfaces are warped upward.
  • the present invention also provides a plasma processing apparatus including a reaction chamber, and the reaction chamber may employ the reaction chamber provided by any of the above aspects of the present invention.
  • the reaction chamber provided by the invention can effectively increase the gas circulation when the gas after the etching reaction passes through the annular baffle by uniformly distributing a plurality of strip-shaped through holes penetrating the thickness thereof on the upper surface of the annular baffle.
  • the cross-sectional area and the cross-sectional area of the interval between the strip-shaped through holes are reduced, so that not only the velocity of the gas after the etching reaction is discharged from the reaction chamber, but also the pressure of the chamber of the reaction chamber is reduced. It can meet the process requirements, and by reducing the cross-sectional area of the interval between the strip-shaped through holes, the barrier effect of the interval on the gas after the etching reaction can be weakened, so that the distribution symmetry of the plasma can be improved to some extent. Sex and uniformity.
  • the plasma processing apparatus provided by the invention adopts the reaction chamber provided by the invention, not only can meet the requirement of high gas flow rate under the premise that the chamber pressure of the reaction chamber is low, but also can Improve the symmetry and uniformity of the plasma distribution.
  • Figure 1 is a cross-sectional view of a conventional plasma processing apparatus
  • FIG. 2 is a schematic structural view of an annular baffle
  • Figure 3A is a partial plan view of an annular baffle having a circular aperture
  • Figure 3B is a partial plan view of an annular baffle having a square hole
  • FIG. 4 is a cross-sectional view of a reaction chamber according to an embodiment of the present invention.
  • Figure 5 is a plan view of an annular baffle having a strip-shaped through hole
  • Figure 6A is a plan view of an annular baffle having another strip-shaped through hole
  • Figure 6B is a partial enlarged view of Figure 6A;
  • Figure 7 is a cross-sectional view of the susceptor support.
  • the reaction chamber 21 includes a carrier device disposed inside the reaction chamber 21, the carrier device including a chuck 27 for carrying the workpiece 25 to be processed, and a base 28 for supporting the chuck 27, the card
  • the disk 27 can be a mechanical chuck or an electrostatic chuck, and the workpiece 25 is fixed to the chuck 27 by means of a process assembly 26.
  • a susceptor support member 29 is disposed in the reaction chamber 21, one end of the susceptor support member 29 is fixedly coupled to the reaction chamber 21, and the other end of the susceptor support member 29 is fixedly coupled to the susceptor 28 for Seat 28 is fixed at a position near the center in the reaction chamber 21, in other words, the structure of the susceptor support 29 is similar to that of the cantilever structure, and the base 28 can be suspended and fixed in the reaction chamber 21 by means of the susceptor support 29.
  • reaction chamber 21 further includes a medium window 24 fixed to the top of the reaction chamber 21 by an adjustment bracket 23, and an air inlet 241 is provided at a central position of the medium window 24 for the process gas inflow reaction
  • An air outlet 211 is provided in the chamber 21 and at the bottom of the reaction chamber 21 for the gas after the etching reaction to exit the reaction chamber 21.
  • the reaction chamber 21 further includes an upper liner 51 surrounded by an upper portion of the inner side wall of the reaction chamber 21, and an annular baffle 512 is disposed at the bottom end of the upper liner 51, and the annular baffle 512 surrounds the reaction
  • the inner side wall of the chamber 21 is connected to the carrying device and to the bottom end of the upper lining 51 for restricting the plasma in a specific area surrounded by the upper lining 51 and the annular baffle 512 to limit The distribution of plasma and the role of shielding.
  • the upper lining 51 may adopt a one-piece annular structure, that is, obtained by integral molding; or, the upper lining 51 may include a plurality of splits divided along a radial section thereof, and a plurality of split bodies may be used.
  • the detaching manner is assembled to form an annular structure, that is, the plurality of separate bodies are butted in the circumferential direction to form a cylindrical shape, and are assembled in the reaction chamber 21 by screw fastening.
  • the material used for the upper liner 51 includes an aluminum alloy.
  • the surface of the upper liner 51 can be hard anodized to improve the corrosion resistance of the upper liner 51, thereby improving the use of the upper liner 51.
  • Lifetime in addition, it is also possible to apply a ruthenium trioxide layer on the surface of the upper liner 51 facing the inside of the reaction chamber 21, that is, the surface of the upper liner 51 corresponding to the region where the plasma is located, which can not only further The life of the upper liner 51 is increased, and particle contamination can also be reduced.
  • a plurality of strip-shaped through holes 511 penetrating the thickness thereof are uniformly distributed on the upper surface of the annular baffle 512.
  • the process gas flows into the reaction chamber 21 via the gas inlet 241 and is excited to form a plasma, which is confined in the region shown in FIG. 4 by the upper liner 51 to process the workpiece. 25 etching; the gas after the etching reaction passes through the strip on the annular baffle 512
  • the through hole 511 flows into the lower portion of the reaction chamber 21 and is discharged from the gas outlet 211.
  • the annular baffle 512 may be disposed at a position close to the upper surface of the chuck 27, and its upper surface is lower than the upper surface of the chuck 27 to facilitate the discharge of the etched gas.
  • the inner peripheral wall and the outer peripheral wall of the annular baffle 512 may be disposed adjacent to the outer peripheral wall of the chuck 27 and the inner peripheral wall of the reaction chamber 21, respectively, in order to better confine the plasma in a specific region.
  • the shape and distribution of the strip-shaped through-holes 511, and the spacing between the strip-shaped through-holes 511 are bound to affect the engraving.
  • the flow rate of the gas after the etching reaction passes through the annular baffle 512 and the chamber pressure of the reaction chamber, that is, the larger the effective cross-sectional area of the strip-shaped through hole 511, and the smaller the cross-sectional area of the interval between the strip-shaped through holes 511 Then, the flow rate of the gas after the etching reaction through the strip-shaped through holes 511 is larger, so that the gas after the etching reaction is more likely to be discharged from the reaction chamber 21, and the chamber pressure of the reaction chamber 21 is also lowered.
  • the technical solution of the present invention uniformly distributes a plurality of strip-shaped through holes 511 on the upper surface of the annular baffle 512 according to the above principle.
  • the strip-shaped through-hole means that the through-hole penetrates the thickness of the annular baffle 512 and its projection shape on the upper surface of the annular baffle 512 is an elongated shape having an aspect ratio not equal to 1, and the long side of the long strip can be It is straight or curved.
  • the effective cross-sectional area of the gas flow when the gas after the etching reaction passes through the annular baffle 512 can be increased, and the cross-sectional area of the interval between the strip-shaped through holes 511 can be reduced, thereby not only increasing
  • the velocity of the gas after the large etching reaction exits the reaction chamber lowers the pressure of the chamber of the reaction chamber to meet the process requirements, and can also be weakened by reducing the cross-sectional area of the interval between the strip-shaped through holes 511.
  • the spacing acts on the gas after the etching reaction, so that the symmetry and uniformity of the plasma distribution can be improved to some extent.
  • strip-shaped through holes of any other structure may be used as long as the effective cross-sectional area of the gas flow when the gas after the etching reaction passes through the annular baffle 512 can be increased, and the strip-shaped through holes are reduced.
  • the cross-sectional area of the interval between 511 is sufficient.
  • each set of annular through hole groups is disposed on the upper surface of the shaped baffle 512, and each set of annular through hole groups is disposed around the annular hole of the annular baffle 512, and the plurality of sets of annular through hole groups are arranged along the annular block
  • the plates 512 are radially nested one another and spaced apart from each other.
  • each set of through holes includes a plurality of strip-shaped through holes 511 which are disposed along the circumferential direction of the annular baffle 512.
  • each set of through holes is annular and formed by a combination of a plurality of strip-shaped through holes 511 spaced along the circumferential direction of the annular baffle 512, and each of the annular through-hole groups is along the annular baffle 512. Radially spaced and concentric with each other.
  • the number of through hole groups is five, each of which has four strip-shaped through holes 511, and each of the strip-shaped through holes 511 is projected on the upper surface of the annular baffle 512.
  • the shape is an elongated arcuate section extending in the circumferential direction of the annular baffle 512, and the four strip-shaped through holes 511 are combined to form a circular ring.
  • the strip-shaped through holes 511 on the annular baffle 512 can be understood in such a manner that the strip-shaped through holes 511 are evenly divided into a plurality of sets of annular through-hole groups, specifically, a plurality of sets of annular through-hole groups For a plurality of rings nested with each other, each set of annular through holes is a ring, and the ring is divided into four fan rings, each of which is a strip through hole 511.
  • the interval 513 between two adjacent ones of the set of through holes 511 and the adjacent two of the other one of the set of through holes are staggered so that all the spaces 513 can be evenly distributed with respect to the upper surface of the annular baffle 512, thereby facilitating the improvement of the uniformity of the air flow, thereby improving the symmetry and uniformity of the plasma distribution.
  • Sex the interval 513 in one of the set of through holes may be located at the center of the strip through hole 511 in the other set of the through hole groups. At the office.
  • the width of the interval 513 between the adjacent two strip-shaped through holes 511 is 1 to 2 cm; the width of the interval between the adjacent two sets of through holes is 1 to 2cm.
  • the projected shape of the strip-shaped through hole 511 on the upper surface of the annular baffle 512 is elongated, and the center line in the longitudinal direction (the direction in which the long sides are located) extends in the radial direction of the annular baffle 513;
  • a plurality of strip-shaped through holes 511 are arranged in a ring shape along the circumferential direction of the annular baffle 513 to form an annular shape.
  • Figure 6A As shown, the long sides of the strip-shaped through holes 511 are straight, and all of the strip-shaped through holes 511 are radially distributed around the center of the upper surface of the annular baffle 512.
  • the angle A between the center lines in the longitudinal direction of the adjacent two elongated strip-shaped through holes 511 is 3 to 4°, because the adjacent two are long.
  • the center line in the longitudinal direction of the strip-shaped strip-shaped through hole 511 is actually the radius of the ring shown on the upper surface of the annular baffle 512, so the angle A is actually the central angle of the ring; each strip shape
  • the width B is 8 to 12 cm.
  • the interval between the adjacent two strip-shaped through holes 511 is a minimum width in the circumferential direction of the annular baffle 512 of 1 to 2 cm.
  • a circular arc transition can be applied to the four corners of the strip-shaped through hole 511 to improve the stability and uniformity of the airflow.
  • the reaction chamber 21 further includes a lower liner 52 covering the lower portion of the inner side wall of the reaction chamber 21 and the bottom of the reaction chamber 21 for protecting the lower portion of the inner side wall of the reaction chamber 21 and the reaction
  • the bottom of the chamber 21 is not corroded.
  • the material used for the lower liner 52 includes an aluminum alloy, and preferably, similar to the upper liner 51, the surface of the lower liner 52 can be hard anodized, and the reaction of the lower liner 52 toward the reaction chamber 21 A layer of antimony trioxide is provided on the inner surface.
  • the lower lining 52 can only be butt-joined and assembled in the reaction chamber 21 by means of screw fastening. It is easy to understand that a through hole 521 is formed in the lower liner 52 at a position corresponding to the exhaust port 211 for the gas after the etching reaction to exit the reaction chamber 21.
  • a spoiler 53 is further disposed on the base support 29, and FIG. 7 is a cross-sectional view of the base support.
  • the spoiler 53 covers the upper surface and both side surfaces of the susceptor support 29, and the two lower ends of the spoiler 53 corresponding to the two side surfaces are respectively warped upward.
  • the spoiler 53 can be fixed to the base support 29 by screws (not shown).
  • the reaction chamber 21 uses a dielectric window 24 (usually ceramic or quartz material) as its top wall for participating in the energy coupling process for forming a plasma.
  • a dielectric window 24 usually ceramic or quartz material
  • the reaction chamber may be replaced by a different process or a top wall of other materials and structures (e.g., a top cover made of metal) instead of the dielectric window.
  • an intake port for conveying the reaction gas into the reaction chamber, and an exhaust port for discharging the reaction gas from the reaction chamber can be adaptively designed according to the specific structure of the reaction chamber.
  • an embodiment of the present invention further provides a plasma processing apparatus including a reaction chamber using the above reaction chamber provided by the embodiment of the present invention.
  • the plasma processing apparatus provided by the embodiment of the invention can not only satisfy the condition that the chamber pressure of the reaction chamber is low, but also has a large gas flow rate by using the above-mentioned reaction chamber provided by the embodiment of the invention. It is also required to improve the distribution symmetry and uniformity of the plasma.

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

提供一种反应腔室以及等离子体加工设备，其包括设置在反应腔室（21）内部的承载装置，以及环绕在反应腔室（21）的内侧壁上部的上内衬（51），在上内衬（51）的底端设置有环绕在反应腔室（21）的内侧壁与承载装置之间的环形挡板（512），在环形挡板（512）上表面上均匀分布有多个贯穿其厚度的条状通孔（511）。所述反应腔室不仅可以满足在反应腔室压力较低的前提下，同时具有较大的气体流量的要求，而且还可以提高等离子体分布的对称性和均匀性。

Description

反应腔室以及等离子体加工设备 技术领域
本发明涉及半导体加工技术领域，具体地，涉及一种反应腔室以及等离子体加工设备。
背景技术
随着微电子技术的快速发展，生产企业间的竞争越来越激烈，这就要求生产企业不断地提高其产品质量以应对激烈的市场竞争。例如，在利用等离子体加工设备进行等离子体刻蚀工艺的过程中，刻蚀均匀性是影响产品质量的主要因素之一，而且，进入32～22纳米技术代后，刻蚀工艺对刻蚀均匀性的要求越来越高，特别是进入22nm以下技术代，要求在反应腔室的腔室压力较低的前提下，同时具有较大的气体流量，这就需要通过优化反应腔室的结构设计来实现上述目标。
图1为现有的等离子体加工设备的剖视图；图2为环形挡板的结构示意图。请一并参阅图1和图2，等离子体加工设备包括反应腔室4，在反应腔室4内设置有静电卡盘7以及用于支撑静电卡盘7的基座8，衬底5借助工艺组件6固定在静电卡盘7上；介质窗1通过调整支架2固定在反应腔室4的顶部，并且在介质窗1的中心位置处设置有进气口11，以供工艺气体流入反应腔室4内，以及在反应腔室4的底部设置有出气口41，以供刻蚀反应后的气体排出反应腔室4。此外，在反应腔室4内，且位于介质窗1与工艺组件6之间设置有内衬3，该内衬3环绕反应腔室4的内侧壁设置，用于将等离子体限制在其内部的特定区域内，以起到限制等离子体的分布及屏蔽的作用。并且，在内衬3的底端设置有环形挡板31。在该环形挡板31上按一定间隔分布有若干通孔311，用以供刻蚀反应后的气体通过，通孔311可以为圆孔，也可以为方孔，如图3A和3B所示。在进行工艺的过程中，工艺气 体经由进气口11流入反应腔室4内，并被激发形成等离子体，等离子体被内衬3限制在图1所示的区域，以对衬底5进行刻蚀；刻蚀反应后的气体经由环形挡板31上的通孔311流入反应腔室4的下部，并自出气口41排出。
然而，由于环形挡板31上的通孔311均属于“点状”通孔，这种“点状”通孔之间的间隔(即，环形挡板31上的未设置通孔311的区域)会对刻蚀反应后的气体起到较大的阻挡作用，从而导致反应腔室的腔室压力较大、刻蚀反应后的气体通过通孔311的流量较小，进而无法满足在反应腔室的腔室压力较低的前提下，同时具有较大的气体流量的要求，而且，通过实验发现，上述阻挡作用也对等离子体分布的对称性和均匀性带来了一定的不良影响。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种反应腔室以及等离子体加工设备，其不仅可以满足在反应腔室的腔室压力较低的前提下，同时具有较大的气体流量的要求，而且还可以提高等离子体的分布对称性和均匀性。
为实现本发明的目的而提供一种反应腔室，其包括设置在所述反应腔室内部的承载装置，以及环绕在所述反应腔室的内侧壁上部的上内衬，在所述上内衬的底端设置有环绕在所述反应腔室的内侧壁与所述承载装置之间的环形挡板，并且，在所述环形挡板上表面上均匀分布有多个贯穿其厚度的条状通孔。
其中，所述多个条状通孔被均匀划分为多组环状的通孔组，每一组环状的通孔组为一个圆环且包括沿所述环形挡板的周向间隔设置的多个条状通孔；并且，所述多组环状的通孔组沿所述环形挡板的径向相互嵌套且彼此间隔一定距离。
其中，在相邻的两组通孔组中，其中的一组通孔组中的相邻两个条状通 孔之间的间隔与其中的另一组中的相邻两个条状通孔之间的间隔交错设置。
其中，所述条状通孔在所述环形挡板上表面上的投影形状为长条形，且所述长条形的长度方向上的中心线在所述环形挡板的径向上延伸；并且，多个所述条状通孔沿所述环形挡板的周向间隔设置。
其中，相邻的两个长条形的长度方向上的中心线之间的夹角为3～4°。
其中，所述长条形的宽度为8～12cm。
其中，相邻的两个条状通孔之间的间隔在所述环形挡板的周向上的最小宽度为1～2cm。
其中，在每组通孔组中，相邻的两个条状通孔之间的间隔的宽度为1～2cm。
其中，相邻的两组通孔组之间的间隔的宽度为1～2cm。
其中，所述反应腔室还包括下内衬，所述下内衬覆盖所述反应腔室的内侧壁的下部以及反应腔室的底部。
其中，所述承载装置包括用于承载被加工工件的卡盘及用于支撑所述卡盘的基座；在所述反应腔室内设置有基座支撑件，所述基座支撑件的一端与所述反应腔室固定连接；所述基座支撑件的另一端与所述基座固定连接；并且在所述基座支撑件上设置有扰流板，所述扰流板覆盖所述基座支撑件的上表面和两个侧表面，并且，所述扰流板的分别与两个侧表面相对应的两个下端向上翘曲。
作为另一个技术方案，本发明还提供一种等离子体加工设备，其包括反应腔室，并且所述反应腔室可以采用本发明上述任意方案提供的反应腔室。
本发明具有以下有益效果：
本发明提供的反应腔室，其通过在环形挡板上表面上均匀分布有多个贯穿其厚度的条状通孔，可以增大刻蚀反应后的气体通过环形挡板时的气体流通的有效截面面积，同时减小条状通孔之间的间隔的截面积，从而不仅可以增大刻蚀反应后的气体排出反应腔室的速度，降低反应腔室的腔室压力，以 使其满足工艺要求，而且通过减小条状通孔之间的间隔的截面积，还可以减弱该间隔对刻蚀反应后的气体的阻隔作用，从而可以在一定程度上提高等离子体的分布对称性和均匀性。
本发明提供的等离子体加工设备，其通过采用本发明提供的反应腔室，不仅可以满足在反应腔室的腔室压力较低的前提下，同时具有较大的气体流量的要求，而且还可以提高等离子体分布的对称性和均匀性。
附图说明
图1为现有的等离子体加工设备的剖视图；
图2为环形挡板的结构示意图；
图3A为具有圆孔的环形挡板的局部俯视图；
图3B为具有方孔的环形挡板的局部俯视图；
图4为本发明实施例提供的反应腔室的剖视图；
图5为具有一种条状通孔的环形挡板的俯视图；
图6A为具有另一种条状通孔的环形挡板的俯视图；
图6B为图6A的局部放大图；以及
图7为基座支撑件的截面图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的反应腔室以及等离子体加工设备进行详细描述。
图4为本发明实施例提供的反应腔室的剖视图。请参阅图4，反应腔室21包括设置在反应腔室21内部的承载装置，该承载装置包括用于承载被加工工件25的卡盘27，以及用于支撑卡盘27的基座28，卡盘27可以是机械卡盘或者静电卡盘，被加工工件25借助工艺组件26固定在卡盘27上。而且，在反应腔室21内设置有基座支撑件29，基座支撑件29的一端与反应腔室21固定连接，基座支撑件29的另一端与基座28固定连接，用以将基座 28固定在反应腔室21内靠近中心的位置处，换言之，基座支撑件29的结构与悬臂结构相类似，借助基座支撑件29，可以将基座28悬空固定在反应腔室21内。
此外，反应腔室21还包括介质窗24，介质窗24通过调整支架23固定在反应腔室21的顶部，并且在介质窗24的中心位置处设置有进气口241，以供工艺气体流入反应腔室21内，以及在反应腔室21的底部设置有出气口211，以供刻蚀反应后的气体排出反应腔室21。
反应腔室21还包括上内衬51，上内衬51环绕在反应腔室21的内侧壁上部，并且在上内衬51的底端设置有环形挡板512，该环形挡板512环绕在反应腔室21的内侧壁与承载装置之间且与上内衬51的底端连接，用于将等离子体限制在上内衬51和环形挡板512所围成的特定区域内，以起到限制等离子体的分布及屏蔽的作用。上内衬51可以采用整体式的环形结构，即，采用一体成型的方式加工获得；或者，上内衬51包括沿其径向截面分割而成的多个分体，且多个分体采用可拆卸的方式装配形成环形结构，即，多个分体沿圆周方向依次对接形成筒状，并利用螺钉紧固的方式装配在反应腔室21内。
上内衬51所采用的材料包括铝合金，优选的，可以对上内衬51的表面进行硬质阳极氧化处理，以提高上内衬51的抗腐蚀性，从而可以提高上内衬51的使用寿命，另外，还可以在上内衬51的朝向反应腔室21内部的表面上，即，上内衬51的对应于等离子体所在区域的表面上涂覆三氧化二钇层，这不仅可以进一步提高上内衬51的使用寿命，而且还可以减少颗粒污染。
并且，在环形挡板512上表面上均匀分布有多个贯穿其厚度的条状通孔511。在进行工艺的过程中，工艺气体经由进气口241流入反应腔室21内，并被激发形成等离子体，等离子体被上内衬51限制在图4所示的区域内，以对被加工工件25进行刻蚀；刻蚀反应后的气体经由环形挡板512上的条 状通孔511流入反应腔室21的下部，并自出气口211排出。
优选的，环形挡板512可以设置在靠近卡盘27的上表面的位置处，且其上表面低于卡盘27的上表面，以便于刻蚀后的气体排出。另外，环形挡板512的内周壁和外周壁可以分别紧靠卡盘27的外周壁和反应腔室21的内周壁设置，以便更好地将等离子体限制在特定区域内。
需要指出的是，条状通孔511的形状和分布方式，以及条状通孔511之间的间隔(即，环形挡板512上的未设置条状通孔511的区域)大小势必会影响刻蚀反应后的气体通过环形挡板512的流量以及反应腔室的腔室压力，即：条状通孔511的有效截面面积越大，同时条状通孔511之间的间隔的截面积越小，则刻蚀反应后的气体通过条状通孔511的流量则越大，从而刻蚀反应后的气体越容易排出反应腔室21，同时也降低了反应腔室21的腔室压力。
本发明的技术方案正是根据上述原理而在环形挡板512的上表面上均匀分布多个条状通孔511。所谓条状通孔，是指该通孔贯穿环形挡板512厚度且其在环形挡板512上表面上的投影形状为长宽比不等于1的长条形，该长条形的长边可以是直的，也可以是弯曲的。
借助条状通孔511，可以增大刻蚀反应后的气体通过环形挡板512时的气体流通的有效截面面积，同时减小条状通孔511之间的间隔的截面积，从而不仅可以增大刻蚀反应后的气体排出反应腔室的速度，降低反应腔室的腔室压力，以使其满足工艺要求，而且通过减小条状通孔511之间的间隔的截面积，还可以减弱该间隔对刻蚀反应后的气体的阻隔作用，从而可以在一定程度上提高等离子体分布的对称性和均匀性。当然，在实际应用中，还可以采用其他任意结构的条状通孔，只要可以增大刻蚀反应后的气体通过环形挡板512时的气体流通的有效截面面积，同时减小条状通孔511之间的间隔的截面积即可。
下面结合图5对一种条状通孔的具体结构进行详细描述。具体地，在环 形挡板512的上表面上设置多组环状的通孔组，每一组环状的通孔组均环绕环形挡板512的环孔而设置，多组环状的通孔组沿环形挡板512的径向相互嵌套且彼此间隔一定距离。并且，每组通孔组包括多个条状通孔511，多个条状通孔511沿环形挡板512的周向间隔设置。也就是说，每组通孔组均呈环状且由沿环形挡板512的周向间隔设置的多个条状通孔511组合形成，而各个环状的通孔组沿环形挡板512的径向间隔设置，且互为同心环。例如，如图5所示，通孔组的数量为5组，每组通孔组中具有4个条状通孔511，并且每个条状通孔511在环形挡板512上表面上的投影形状为沿环形挡板512的周向延伸的长条的弧形段，且4个条状通孔511组合形成一个圆环。事实上，可以这样理解环形挡板512上的条状通孔511：即，这些条状通孔511被均匀划分为多组环状的通孔组，具体地，多组环状的通孔组为多个彼此嵌套的圆环，每一组环状的通孔组为一个圆环，且该圆环被分隔为4个扇环，每一个扇环为一个条状通孔511。
优选的，在相邻的两组通孔组中，其中的一组通孔组中的相邻两个条状通孔511之间的间隔513与其中的另一组中的相邻两个条状通孔之间的间隔513交错设置，以使所有间隔513能够相对于环形挡板512的上表面均匀地分布，从而有利于提高气流的均匀性，进而可以提高等离子体分布的对称性和均匀性。例如，如图5所示，在相邻的两组通孔组中，其中的一组通孔组中的间隔513可以位于其中的另一组通孔组中的条状通孔511的中心位置处。
优选的，在每组通孔组中，相邻的两个条状通孔511之间的间隔513的宽度为1～2cm；相邻的两组通孔组之间的间隔的宽度为1～2cm。
下面结合图6A和图6B对另一种条状通孔的具体结构进行详细描述。具体地，条状通孔511在环形挡板512上表面上的投影形状为长条形，且其长度方向(长边的所在方向)上的中心线在环形挡板513的径向上延伸；并且，多个条状通孔511沿环形挡板513的周向间隔排列形成环状。如图6A 所示，条状通孔511的长边是直的，且所有条状通孔511以环形挡板512上表面的中心为中心呈放射状分布。
优选的，如图6B所示，相邻的两个长条形条状通孔511的长度方向上的中心线之间的夹角A°为3～4°，由于，相邻的两个长条形条状通孔511的长度方向上的中心线实际上为环形挡板512上表面所示圆环的半径，因此该夹角A实际上为该圆环的圆心角；每个长条形的宽度B为8～12cm。相邻的两个条状通孔511之间的间隔在环形挡板512的周向上的最小宽度为1～2cm。另外，进一步优选的，可以对条状通孔511的四角采用圆弧过渡，以提高气流的稳定性和均匀性。
优选的，反应腔室21还包括下内衬52，下内衬52覆盖反应腔室21的内侧壁的下部以及反应腔室21的底部，用以保护反应腔室21的内侧壁的下部以及反应腔室21的底部不被腐蚀。下内衬52所采用的材料包括铝合金，并且优选的，与上内衬51相类似，可以对下内衬52的表面进行硬质阳极氧化处理，并在下内衬52的朝向反应腔室21内部的表面上设置三氧化二钇层。此外，由于基座支撑件29的存在，下内衬52只能采用分体对接，并利用螺钉紧固的方式装配在反应腔室21内。容易理解，在下内衬52上，且位于与排气口211相对应的位置处开设有通孔521，以供刻蚀反应后的气体排出反应腔室21。
优选的，在基座支撑件29上还设置有扰流板53，图7为基座支撑件的截面图。如图7所示，扰流板53覆盖基座支撑件29的上表面和两个侧表面，并且，扰流板53的分别与两个侧表面相对应的两个下端向上翘曲。借助扰流板53，可以改善基座支撑件29周围的气流分布，从而可以进一步提高反应腔室21的气流均匀性，同时可以保护基座支撑件29免于等离子体的轰击。扰流板53可以通过螺钉(图中未示出)固定在基座支撑件29上。
需要说明的是，在本实施例中，反应腔室21采用介质窗24(通常为陶瓷或石英材料)作为其顶壁，用以参加形成等离子体的能量耦合过程。但是， 本发明并不局限于此，在实际应用中，反应腔室可以根据不同的工艺或采用其他材料和结构的顶壁(例如采用金属制作的顶盖)来代替介质窗。并且，用于向反应腔室内输送反应气体的进气口，以及将反应气体自反应腔室排出的排气口可以根据反应腔室的具体结构进行适应性设计。
作为另一个技术方案，本发明实施例还提供一种等离子体加工设备，其包括反应腔室，该反应腔室采用了本发明实施例提供的上述反应腔室。
本发明实施例提供的等离子体加工设备，其通过采用本发明实施例提供的上述反应腔室，不仅可以满足在反应腔室的腔室压力较低的前提下，同时具有较大的气体流量的要求，而且还可以提高等离子体的分布对称性和均匀性。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (12)

  1. 一种反应腔室，包括设置在所述反应腔室内部的承载装置，以及环绕在所述反应腔室的内侧壁上部的上内衬，在所述上内衬的底端设置有环绕在所述反应腔室的内侧壁与所述承载装置之间的环形挡板，其特征在于，在所述环形挡板上表面上均匀分布有多个贯穿其厚度的条状通孔。
  2. 根据权利要求1所述的反应腔室，其特征在于，所述多个条状通孔被均匀划分为多组环状的通孔组，每一组环状的通孔组为一个圆环且包括沿所述环形挡板的周向间隔设置的多个条状通孔；并且，所述多组环状的通孔组沿所述环形挡板的径向相互嵌套且彼此间隔一定距离。
  3. 根据权利要求2所述的反应腔室，其特征在于，在相邻的两组通孔组中，其中的一组通孔组中的相邻两个条状通孔之间的间隔与其中的另一组中的相邻两个条状通孔之间的间隔交错设置。
  4. 根据权利要求1所述的反应腔室，其特征在于，所述条状通孔在所述环形挡板上表面上的投影形状为长条形，且所述长条形的长度方向上的中心线在所述环形挡板的径向上延伸；并且，
    多个所述条状通孔沿所述环形挡板的周向间隔设置。
  5. 根据权利要求4所述的反应腔室，其特征在于，相邻的两个长条形的长度方向上的中心线之间的夹角为3～4°。
  6. 根据权利要求4所述的反应腔室，其特征在于，所述长条形的宽度为8～12cm。
  7. 根据权利要求4所述的反应腔室，其特征在于，相邻的两个条状通孔之间的间隔在所述环形挡板的周向上的最小宽度为1～2cm。
  8. 根据权利要求2所述的反应腔室，其特征在于，在每组通孔组中，相邻的两个条状通孔之间的间隔的宽度为1～2cm。
  9. 根据权利要求2所述的反应腔室，其特征在于，相邻的两组通孔组之间的间隔的宽度为1～2cm。
  10. 根据权利要求1所述的反应腔室，其特征在于，所述反应腔室还包括下内衬，所述下内衬覆盖所述反应腔室的内侧壁的下部以及反应腔室的底部。
  11. 根据权利要求1所述的反应腔室，其特征在于，所述承载装置包括用于承载被加工工件的卡盘及用于支撑所述卡盘的基座；
    在所述反应腔室内设置有基座支撑件，所述基座支撑件的一端与所述反应腔室固定连接；所述基座支撑件的另一端与所述基座固定连接；并且
    在所述基座支撑件上设置有扰流板，所述扰流板覆盖所述基座支撑件的上表面和两个侧表面，并且，所述扰流板的分别与两个侧表面相对应的两个下端向上翘曲。
  12. 一种等离子体加工设备，其包括反应腔室，其特征在于，所述反应腔室采用权利要求1-11任意一项所述的反应腔室。
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