WO2015114789A1 - Dispositif de conversion d'énergie - Google Patents

Dispositif de conversion d'énergie Download PDF

Info

Publication number
WO2015114789A1
WO2015114789A1 PCT/JP2014/052198 JP2014052198W WO2015114789A1 WO 2015114789 A1 WO2015114789 A1 WO 2015114789A1 JP 2014052198 W JP2014052198 W JP 2014052198W WO 2015114789 A1 WO2015114789 A1 WO 2015114789A1
Authority
WO
WIPO (PCT)
Prior art keywords
mosfet
current
diode
turned
detection unit
Prior art date
Application number
PCT/JP2014/052198
Other languages
English (en)
Japanese (ja)
Inventor
森　和久
石川　勝美
歩 畑中
徹 増田
景山　寛
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to PCT/JP2014/052198 priority Critical patent/WO2015114789A1/fr
Publication of WO2015114789A1 publication Critical patent/WO2015114789A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/38—Means for preventing simultaneous conduction of switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0009—Devices or circuits for detecting current in a converter

Definitions

  • the present invention relates to a power converter configured by a MOSFET (field effect transistor), and more particularly to a power converter that drives an inductive load such as a motor.
  • MOSFET field effect transistor
  • a current detection element (sense element) is provided in a MOSFET chip, and a MOSFET current and a parasitic diode current are detected.
  • a MOSFET current and a parasitic diode current are detected.
  • a diode In a power conversion device that drives an inductive load such as a motor, a diode is connected in reverse parallel to the switching element so that the current can flow in the opposite direction in each of the upper and lower arms so that the load current does not become discontinuous. It is common.
  • FIG. 2 shows the configuration of the three-phase inverter circuit 100.
  • the modules 10U, 10V, and 10W composed of a pair of upper and lower switching elements and antiparallel diodes are subjected to switching control by the gate drive circuit 30 to convert the DC power source 6 into three-phase AC power and drive the motor 7.
  • the gate drive circuit 30 to convert the DC power source 6 into three-phase AC power and drive the motor 7.
  • a diode is connected in antiparallel with the switching element.
  • the switching element is an IGBT (insulated gate bipolar transistor)
  • IGBT insulated gate bipolar transistor
  • FIG. 4 shows the current Id-voltage Vds characteristics of the MOSFET. Since a MOSFET has a parasitic diode due to its structure, a reverse current can flow as shown by a dotted line 91 in the figure. Further, by connecting an antiparallel diode, the resistance can be lowered as shown by a broken line 92 in the figure, so that loss can be reduced. Furthermore, by applying a gate voltage to the MOSFET, a reverse conduction current can be caused to flow as shown by a solid line 93 in the figure, and the loss can be further reduced.
  • SiC-MOSFET can reduce the switching loss as compared with the conventional IGBT, so that the switching frequency can be increased and the inductance value of the reactor of the filter circuit can be reduced.
  • the switching frequency is increased, it is also necessary to reduce the dead time for suppressing the upper and lower switching elements from being simultaneously turned on and short-circuited.
  • the reason for the dead time is that when one is turned off and the other is turned on at the same time, due to the difference in the delay time between the switching element itself and the turn-on and the delay time variation of the drive circuit, This is because there is a concern to turn on.
  • a current detecting element (sense element) is provided in the MOSFET chip as in Patent Document 1, and the MOSFET current and the parasitic diode current are detected, so that the MOSFET current does not flow. It is as described above that there is a method for determining that it has been turned off.
  • Patent Document 1 requires a sense element in the MOSFET chip.
  • the detected signal is transmitted to the opposite side by the level shift circuit, it is necessary to take into account variations in the components constituting the level shift circuit, and thus there is a limit to dead time reduction.
  • the problem to be solved by the present invention is to realize dead time reduction by reliably detecting MOSFET OFF in the circulation period without requiring a sense element or a level shift circuit.
  • a power conversion device of the present invention includes a first circuit composed of a first diode connected in antiparallel with a first MOSFET, and an antiparallel operation with a second MOSFET.
  • a second circuit composed of a connected second diode is connected in series, a first drive circuit for driving the first MOSFET, a second drive circuit for driving the second MOSFET, A first current detector for detecting the current of the first MOSFET, a second current detector for detecting the current of the first diode, and a period in which the current of the first MOSFET is in the reverse conduction direction
  • the first MOSFET is turned off from the difference between the current of the first MOSFET detected by the first current detector and the current of the first diode detected by the second current detector. Determined A first determination unit, wherein the second drive circuit turns on the second MOSFET when the first determination unit determines that the first MOSFET is turned off. .
  • the power conversion device of the present invention includes a third current detection unit that detects a current of the second MOSFET, a fourth current detection unit that detects a current of the second diode, and the second current detection unit.
  • a third current detection unit that detects a current of the second MOSFET
  • a fourth current detection unit that detects a current of the second diode
  • the second current detection unit During the period in which the current of the MOSFET is in the reverse conduction direction, the current of the second MOSFET detected by the third current detector and the current of the second diode detected by the fourth current detector
  • a second determination unit that determines from the difference that the second MOSFET is turned off, and the first drive when the second determination unit determines that the second MOSFET is turned off.
  • the circuit is characterized by turning on the first MOSFET.
  • the present invention it is possible to reliably detect the turn-off of the MOSFET in the circulation period and reduce the dead time without requiring a sense element or a level shift circuit.
  • Example 1 of this invention It is a figure which shows the structure of Example 1 of this invention. It is a figure which shows the structure of the power converter device which is an application field of this invention. It is a figure which shows the operation
  • FIG. 1 shows the configuration of the first embodiment of the present invention.
  • the positive side MOSFET (1P) and the diode 2P are connected in reverse parallel to form an upper arm, and the negative side MOSFET (1N) and diode 2N are connected in reverse parallel to form a lower arm.
  • the parasitic diode of the MOSFET is indicated by a diode symbol.
  • the gate drive circuit 3P for driving the positive-side MOSFET and the gate drive circuit 3N for driving the negative-side MOSFET are built in the semiconductor module 10, an on / off signal is given to the signal terminals Sp and Sn. Switching is controlled.
  • the current detection unit 41P of the positive side MOSFET (1P) and the current detection unit 42P of the positive side diode 2P detect the current by detecting the magnetic flux generated by each current.
  • the determination unit 5P takes the difference (51) between the two current detections and determines (52) based on the magnitude.
  • the current is detected by detecting the magnetic flux generated by the current detection unit 41N of the negative-side MOSFET (1N) and the current detection unit 42N of the negative-side diode 2N, and the difference is determined.
  • Figure 3 shows an example of operation.
  • the gate signal Sp of the positive-side MOSFET changes from on to off.
  • the gate signal Sn of the negative-side MOSFET changes from off to on.
  • Sn changes from on to off at time t3
  • the positive-side MOSFET is turned on again at time t4.
  • the MOSFET When the negative side MOSFET is turned on at time t2, the MOSFET has a low resistance as shown in FIG. 4, so that the MOSFET current Iqn becomes larger than the diode current Idn. Therefore, ⁇ n changes greatly to a positive value (803 in the figure).
  • the time t4 when the drive signal Sp of the positive side MOSFET (1P) is turned on can be made earlier (closer to t3), and the dead time can be reduced.
  • the determination is based on the difference between the MOSFET-side current and the diode current.
  • the threshold needs to be lowered to such an extent that ⁇ qn can be detected at 804 in the figure.
  • ⁇ qn changes negatively by Von (807 in the figure). Since Von is as large as ⁇ qn at 804 in the figure, there is a possibility of erroneous detection here.
  • the threshold can be increased, so that erroneous detection can be prevented.
  • Example 2 of the present invention is shown in FIG.
  • the gate drive circuit is not built in the module 10 but only the gate resistors 30P and 30N.
  • a gate voltage is applied between the positive side gate terminals 321P and 322P.
  • a gate voltage is applied between the negative side gate terminals 321N and 322N.
  • a difference is detected inside the module as a magnetic flux detection value generated by the current in the determination unit, and the output is output to 53P on the positive side and 53N on the negative side, and determination is performed outside the module.
  • Such a structure eliminates the need for a gate drive or control power supply inside the module.
  • FIG. 6A and 6b show examples of mounting the current detection unit.
  • 6A is a top view
  • FIG. 6B is a view taken along the line A-A ′ in FIG.
  • a positive side MOSFET (1P) and a diode 2P are connected to the positive pattern 111 of the insulating substrate 11 inside the module.
  • the negative side MOSFET (1N) and the diode 2N are connected to the AC pattern 112.
  • the positive side MOSFET (1P) and the diode 2P are connected to the AC pattern 112 by wiring wires.
  • the negative side MOSFET (1N) and the diode 2N are connected to the negative pattern 113 by wiring wires.
  • the gate voltage applied between the gate terminals 321P and 322P is applied to the gate of the MOSFET (1P) through the gate resistor 30P.
  • the gate voltage applied between the gate terminals 321N and 322N is applied to the gate of the MOSFET (1N) through the gate resistor 30N.
  • an annular coil is attached to the wiring wire to detect the magnetic flux generated by the wiring wire current. Further, the output is connected so that a difference in current detection can be output, and the detection terminals 53P and 53N can output the output to the outside of the module.
  • the use of the annular coil as described above ensures insulation from the wiring wire, so that the level shift circuit can be dispensed with.
  • Example 3 of the present invention is shown in FIG.
  • the configuration is one chip each on the positive electrode side and the negative electrode side, whereas in FIG. 7, two chips are connected in parallel.
  • the current is increasing. Even when a plurality of chips are connected in parallel, detection can be performed in the same manner as in the first and second embodiments by mounting an annular coil as shown in FIG.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inverter Devices (AREA)

Abstract

La présente invention a pour objet de réduire le temps mort par une détection fiable de la désactivation d'un transistor à effet de champ à semi-conducteur à oxyde métallique (MOSFET pour Metal Oxide Semiconductor Field Effect Transistor) pendant une période de reflux sans avoir besoin d'un élément de détection ou d'un circuit de décalage de niveau. Un dispositif de conversion d'énergie est composé d'un montage en série d'un premier circuit et d'un second circuit, ledit premier circuit comprenant un premier transistor MOSFET et une première diode raccordée inversement en parallèle et ledit second circuit comprenant un second transistor MOSFET et une seconde diode raccordée inversement en parallèle. Le dispositif de conversion d'énergie comprend : une première unité de détection de courant destinée à détecter un courant qui circule à travers le premier transistor MOSFET ; une seconde unité de détection de courant destinée à détecter un courant qui circule à travers la première diode ; et une première unité de détermination destinée à déterminer que le premier transistor MOSFET est désactivé sur la base d'une différence entre le courant qui circule à travers le premier transistor MOSFET et le courant qui circule à travers la première diode pendant une période pendant laquelle le courant circule à travers le premier transistor MOSFET dans une direction de conduction opposée. Lorsque la première unité de détermination détermine que le premier transistor MOSFET a été désactivé, un second circuit d'attaque destiné à attaquer le second transistor MOSFET active le second transistor MOSFET.
PCT/JP2014/052198 2014-01-31 2014-01-31 Dispositif de conversion d'énergie WO2015114789A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/052198 WO2015114789A1 (fr) 2014-01-31 2014-01-31 Dispositif de conversion d'énergie

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/052198 WO2015114789A1 (fr) 2014-01-31 2014-01-31 Dispositif de conversion d'énergie

Publications (1)

Publication Number Publication Date
WO2015114789A1 true WO2015114789A1 (fr) 2015-08-06

Family

ID=53756401

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/052198 WO2015114789A1 (fr) 2014-01-31 2014-01-31 Dispositif de conversion d'énergie

Country Status (1)

Country Link
WO (1) WO2015114789A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017146154A (ja) * 2016-02-16 2017-08-24 富士電機株式会社 電流検出装置および半導体装置
WO2018193003A1 (fr) * 2017-04-20 2018-10-25 Abb Schweiz Ag Détection de court-circuit dans des modules demi-pont parallèles

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03169266A (ja) * 1989-11-27 1991-07-22 Matsushita Electric Works Ltd インバータ装置
JP2004328812A (ja) * 2003-04-21 2004-11-18 Toshiba Corp Ｄｃ−ｄｃコンバータ制御回路、及び、ｄｃ−ｄｃコンバータ
JP2010197346A (ja) * 2009-02-27 2010-09-09 Mitsubishi Electric Corp 電力用半導体モジュールおよびその電力用半導体モジュールを用いた電力変換器
JP2013127709A (ja) * 2011-12-19 2013-06-27 Denso Corp 電流検出回路および半導体集積回路装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03169266A (ja) * 1989-11-27 1991-07-22 Matsushita Electric Works Ltd インバータ装置
JP2004328812A (ja) * 2003-04-21 2004-11-18 Toshiba Corp Ｄｃ−ｄｃコンバータ制御回路、及び、ｄｃ−ｄｃコンバータ
JP2010197346A (ja) * 2009-02-27 2010-09-09 Mitsubishi Electric Corp 電力用半導体モジュールおよびその電力用半導体モジュールを用いた電力変換器
JP2013127709A (ja) * 2011-12-19 2013-06-27 Denso Corp 電流検出回路および半導体集積回路装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017146154A (ja) * 2016-02-16 2017-08-24 富士電機株式会社 電流検出装置および半導体装置
WO2018193003A1 (fr) * 2017-04-20 2018-10-25 Abb Schweiz Ag Détection de court-circuit dans des modules demi-pont parallèles

Similar Documents

Publication Publication Date Title
JP5047377B2 (ja) スイッチングゲートドライバ
JP5822773B2 (ja) 電力変換装置
JP6319045B2 (ja) 半導体素子の駆動回路及び半導体素子の駆動システム
JP6136011B2 (ja) 半導体装置、および電力変換装置
WO2014181450A1 (fr) Appareil de commande d'élément semi-conducteur du type à grilles isolantes, et appareil de conversion de puissance utilisant ledit appareil de commande d'élément semi-conducteur du type à grilles isolantes
JP6457800B2 (ja) 電力変換装置およびこれを備えた鉄道車両
JP5606506B2 (ja) 駆動制御装置及び駆動制御方法
JP5831528B2 (ja) 半導体装置
US9252137B2 (en) Semiconductor substrate and semiconductor chip
US20160241242A1 (en) Drive unit
JP6723175B2 (ja) パワー半導体のゲート駆動装置およびゲート駆動方法
JP2011030350A (ja) 電力変換装置
KR102117719B1 (ko) 전력 반도체 회로
JP2015033149A (ja) 半導体素子の駆動装置及びそれを用いた電力変換装置
WO2020105414A1 (fr) Dispositif de conversion d'énergie électrique
WO2015114789A1 (fr) Dispositif de conversion d'énergie
JP2015033222A (ja) 半導体素子の駆動装置およびそれを用いる電力変換装置
JP5446851B2 (ja) 電力変換装置
JP6661002B2 (ja) 電力変換装置
WO2018034084A1 (fr) Module semi-conducteur, procédé de sélection d'élément de commutation destiné à un module semi-conducteur, et procédé de conception de puce destiné à un élément de commutation
JP3896940B2 (ja) 半導体装置
JP2015216710A (ja) 半導体装置及び電力変換装置
JP2022129346A (ja) 短絡故障検出装置および電力変換装置
JP7001558B2 (ja) 電力変換装置及び電力変換装置における電流制御方法
JP2018057227A (ja) インバータ装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14880451

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14880451

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP