Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/11—Lapping tools
  • B24B37/20—Lapping pads for working plane surfaces
  • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/0605—Carbon
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/0635—Carbides
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/26—Deposition of carbon only
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/32—Carbides
  • C23C16/325—Silicon carbide
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]

Definitions

• the present disclosure relates to an abrasive material having a structured surface.
• the present disclosure relates to an abrasive material including an abrasive layer having a surface treated structured surface.
• Abrasive materials are widely used in rough polishing, chamfering, final polishing, and the like of various surfaces such as semiconductor wafers, magnetic recording media, glass plates, lenses, prisms, automotive painted surfaces, fiber optic connector end surfaces, and the like.
• abrasive materials also referred to as conditioners or dresser disks
• conditioners or dresser disks including an abrasive layer having a structured surface
• the CMP process includes performing CMP by providing a slurry including abrasive particles between the polishing pad and a semiconductor wafer.
• the conditioners include a silicon carbide layer coated with a monolithic diamond layer as an abrasive layer, and are attached to a supporting disk or ring for example.
• the abrasive material roughens the surface of the polishing pad, and eliminates clogging of the polishing pad surface.
• the CMP process is stabilized in this manner.
• This sort of conditioner including an abrasive layer having a structured surface is advantageous in that large scratches caused by dislodged abrasive particles do not occur on the semiconductor wafer surface as compared to other conventional conditioners having abrasive particles such as agglomerate diamond particles that are adhered onto a base material by nickel plating, soldering, sintering, or the like.
• An abrasive material having a structured surface is also used in surface polishing large glass plates used in liquid crystal display manufacturing and the like, in rough polishing and final polishing of optical fiber connector end surfaces, automotive painted surfaces, and the like.
• an abrasive material is used where the abrasive layer includes abrasive particles such as agglomerate diamond particles, alumina, silicon carbide, cerium oxide, and the like, and binders such as cured urethane acrylate, epoxy resin, and the like.
• the portion of the abrasive layer that contacts objects to be polished is worn during rough polishing or final polishing depending on the hardness of the object to be polished, and new abrasive particles are exposed on the structured surface.
• the abrasive layer is usually worn during polishing.
• the abrasive layer may not be significantly worn.
• Patent Document 1 International Publication WO 2005-012592 describes: (a) base material having a surface including (1) a first phase that contains at least one type of ceramic material, and (2) a second phase including at least one type of carbide forming material; and (b) a CVD diamond coating composite material including a chemical vapor deposition diamond coating disposed on at least a part of the surface of the base material.
• Patent Document 2 Japanese Translation of Published PCT Application No. 2002-542057 describes "an abrasive article that is ideal for polishing glass or glass ceramic work pieces, including a backing material and at least one three- dimensional abrasive coating bonded on the surface of the backing material, wherein the abrasive coating includes a binder formed from a cured binder precursor dispersing a plurality of diamond bead abrasive particles and a filler configuring approximately 40 to approximately 60 wt% of the abrasive coating.”
• Patent Document 3 Japanese Unexamined Patent Application
• an abrasive material used for polishing an optical fiber connector end surface into a predetermined shape including: a base material and an abrasive layer provided on the base material, wherein the abrasive layer has an abrasive composite including abrasive particles and a binding agent as components, and wherein the abrasive layer has a spatial structure configured by a plurality of systematically disposed solid elements of a predetermined shape.
• Patent Document 1 International Publication WO 2005/012592
• Patent Document 2 Japanese Translation of Published PCT Application
• Patent Document 3 Japanese Unexamined Patent Application
• urethane foam pad conditioning is performed during the CMP process using abrasive material including an abrasive layer having a structured surface
• the defect density of the semiconductor wafer surface might increase in conjunction with an increase in conditioning cycles.
• accumulation of foreign objects such as abrasive particles included in the CMP slurry, polyurethane particles scraped from the urethane foam pad, and the like may be observed in the valley parts (concave parts) of the structured surface of the abrasive layer. Accumulation of the foreign objects is thought to interfere with the smooth flow of the CMP slurry between the abrasive material and the urethane foam pad.
• An object of the present disclosure is to provide abrasive material having a structured surface that is excellent in preventing adhesion and accumulation of foreign objects, and a manufacturing method thereof.
• An embodiment of the present disclosure provides an abrasive material having an abrasive layer having a structured surface with a plurality of three- dimensional elements arranged thereon, a surface treatment selected from the group consisting of fluoride treatment and silicon treatment being performed on at least a portion of the structured surface, and the fluoride treatment being selected from the group consisting of plasma treatment, chemical vapor deposition, physical vapor deposition, and fluorine gas treatment.
• Another embodiment of the present disclosure provides a method of manufacturing an abrasive material including: providing an abrasive material including an abrasive layer having a structured surface with a plurality of three- dimensional elements arranged thereon; and performing a surface treatment selected from the group consisting of fluoride treatment and silicon treatment on at least a portion of the structured surface of the abrasive material; the fluoride treatment being selected from the group consisting of plasma treatment, chemical vapor deposition, physical vapor deposition, and fluorine gas treatment.
• Yet another embodiment of the present disclosure provides an abrasive material having an abrasive layer with a structured surface configured with a plurality of three-dimensional elements arranged thereon, at least a portion of the structured surface including: (a) a film including a material selected from the group consisting of densified fluorocarbon, silicon oxycarbide, and silicon oxide; (b) a fluorine terminated surface, or (c) a combination thereof.
• an abrasive material can be provided that can discharge without adhering or accumulating foreign objects in the structured surface, particularly valley parts (concave parts) of the structured surface.
• FIG. 2 is a cross-sectional view of an abrasive material of another embodiment of the present disclosure.
• FIG. 3B is an upper surface schematic view of a structured surface where a plurality of three-dimensional elements having a quadrangular pyramid shape are disposed.
• FIG. 3E is a cross-sectional view of a structured surface where the three- dimensional elements are laterally oriented and aligned triangular prisms.
• FIG. 3F is an upper surface schematic view of a structured surface where a plurality of three-dimensional elements having a hipped roof shape are disposed.
• FIG. 3G is an upper surface schematic view of a structured surface where a combination of a plurality of three-dimensional elements of various shapes is disposed.
• FIG. 4A-4D are optical micrographs of a structured surface of abrasive materials of examples 1 and 2 and comparative examples 1 and 2, respectively, after performing a CMP dressing test.
• FIG. 5B is an optical micrograph of a structured surface of abrasive materials A through C of examples 3 through 5 and comparative example 3 after performing an automotive coating polishing test.
• FIG. 5 C is an optical micrograph of a structured surface of abrasive materials A through C of examples 3 through 5 and comparative examples 3 after performing an automotive coating polishing test and then cleaning with water.
• Abrasive surface in the present disclosure refers to a contact surface with an object to be polished, in other words, a level surface that is parallel to the surface of the object to be polished, when the abrasive material contacts a flat object to be polished.
• the "height" of the three-dimensional element in the present disclosure refers to the distance from the bottom surface of the three-dimensional element to the top point or top surface of the three-dimensional element along a perpendicular line of the abrasive surface.
• FIG. 1 illustrates a cross-sectional view of an abrasive material of an embodiment of the present disclosure.
• the abrasive material 10 illustrated in FIG. 1 includes an abrasive layer 1 1 , and the abrasive layer 1 1 includes a bulk layer 13 and a surface coating layer 14 disposed on at least a part of the bulk layer 13.
• the surface coating layer 14 is applied to a structured surface where a plurality of three-dimensional elements 12 are disposed.
• the bulk layer 13 not only determines the shape of a three-dimensional element 12, but also functions as a base material for attaching the abrasive material 10 to another tool or the like.
• the bulk layer determines the shape of the three-dimensional element.
• the bulk layer can be formed by various hard materials such as an inorganic material such as sintered ceramic for example, considering the material
• the sintered ceramic can include silicon carbide, silicon nitride, alumina, zirconia, tungsten carbide, and the like for example.
• silicon carbide and silicon nitride, and particularly silicon carbide can be advantageously used from the perspective of strength, hardness, wear resistance, and the like.
• the bulk layer can be formed by mixing ceramic particles such as silicon carbide or the like, a binder, and other materials as needed, pressure injecting into a metal die having a negative pattern of the structured surface, and then sintering.
• the surface coating layer is generally formed by a material that is harder than the bulk layer, and contributes to polishing the object to be polished by contacting the object to be polished during polishing.
• Examples of the surface coating layer that can be used include diamond-like carbon (abbreviated as DLC), and other diamond materials, tungsten carbide (WC), titanium nitride (TiN), titanium carbide (TiC), and the like.
• the thickness of the surface coating layer is generally approximately 0.5 ⁇ or more or approximately 1 ⁇ or more, and approximately 30 ⁇ or less or approximately 20 ⁇ or less. By setting the thickness of the surface coating layer to approximately 1 ⁇ or more, only the surface coating layer contacts the object to be polished during polishing, and thus the object to be polished can be protected from contact with the bulk layer. On the other hand, if adhesion of the surface coating layer and the bulk layer is low, the thickness of the surface coating layer is preferably made relatively thin.
• Film containing diamond materials can be advantageously used as the surface coating layer.
• the film can include diamond-like carbon for example.
• Diamond-like carbon is amorphous, and includes a large amount of sp 3 stabilized by hydrogen (for example, carbon atoms are approximately 40 atomic % or more or approximately 50 atomic % or more, and approximately 99 atomic % or less or approximately 98 atomic % or less).
• the diamond film can be deposited on the bulk layer by conventional technology such as a plasma enhanced chemical vapor deposition (PECVD) method, a hot wire chemical vapor deposition (HWCVD) method, ion beam, laser ablation, RF plasma, ultrasound, arc discharge, cathodic arc plasma deposition, and the like, using a gas carbon source such as methane or the like or a solid carbon source such as graphite or the like, and hydrogen as needed.
• PECVD plasma enhanced chemical vapor deposition
• HWCVD hot wire chemical vapor deposition
• FIG. 2 illustrates a cross-sectional view of an abrasive material of another embodiment of the present disclosure.
• the abrasive material 10 illustrated in FIG. 2 includes an abrasive layer 1 1 including abrasive particles 16 and a binder 17 on a backing material 15, and the abrasive layer 1 1 has a structured surface where a plurality of three-dimensional elements 12 are disposed.
• the backing material 15 acts as a base material of the abrasive material 10.
• the abrasive particles 16 are uniformly or non-uniformly distributed throughout the binder 17. With this embodiment, when the surface of the object to be polished is polished using the abrasive material 10, a portion contacting the object to be polished is gradually destroyed, thereby exposing unused abrasive particles 16, depending on the hardness of the object to be polished.
• a curable composition including abrasive particles, a binder precursor, and an initiator are filled into a metal die having a negative pattern of the structured surface, the composition is cured using heat or radiation, and therefore, an abrasive layer including abrasive particles and a binder can be formed.
• abrasive particles examples include diamond, cubic boron nitride, cerium oxide, fused aluminum oxide, heat treated aluminum oxide, aluminum oxide prepared by a sol-gel process, silicon carbide, chromium oxide, silica, zirconia, alumina zirconia, iron oxide, garnet, and mixtures thereof.
• the Mohs' hardness of the abrasive particles is preferably 8 or higher or 9 or higher.
• the type of abrasive particle can be selected based on the intended polishing, and diamond, cubic boron nitride, aluminum oxide, and silicon carbide can be advantageously used for rough polishing such as deburring or the like, and for chamfering such as curved surface forming or the like, and silica and aluminum oxide can be advantageously used for final polishing.
• the mean particle size of the abrasive particles may be within different ranges based on the type of abrasive particle, application of the abrasive material, and the like, and is generally approximately 10 nm or more, approximately 1 ⁇ or more, or approximately 5 ⁇ or more, and approximately 500 ⁇ or less, approximately 200 ⁇ or less, or approximately 80 ⁇ or less.
• abrasive particles with a mean particle size of approximately 0.5 ⁇ or more and approximately 20 ⁇ or less, or approximately 10 ⁇ or less can be
• abrasive particles with a mean particle size of approximately 10 nm or more and approximately 1 ⁇ or less, approximately 0.5 ⁇ or less, or approximately 0.1 ⁇ or less can be advantageously used for final polishing.
• Agglomerate diamond that disperses diamond particles with a particle size of approximately 1 ⁇ to approximately 100 ⁇ in a matrix such as glass, ceramics, metals, metal oxides, organic resins, and the like can be used.
• the mean particle size of the agglomerate diamond including diamond particles that have a particle size that is larger than 15 ⁇ is generally approximately 100 ⁇ or more or approximately 250 ⁇ or more, and approximately 1000 ⁇ or less or approximately 400 ⁇ or less.
• the mean particle size of the agglomerate diamond including diamond particles that have a particle size of 15 ⁇ or less is generally approximately 20 ⁇ or more, approximately 40 ⁇ or more, or approximately 70 ⁇ or more, and approximately 450 ⁇ or less, approximately 400 ⁇ or less, or approximately 300 ⁇ or less.
• Curable resin cured by heat or radiation can be used as the binder precursor.
• the curable resin is generally cured by radical polymerization or cationic polymerization.
• the binder precursor include phenolic resin, resol-phenol resin, aminoplast resin, urethane resin, epoxy resin, acrylic resin, polyester resin, vinyl resin, melamine resin, isocyanurate acrylate resin, urea-formaldehyde resin, isocyanurate resin, urethane acrylate resin, epoxy acrylate resin, and mixtures thereof.
• the term "acrylate" used for the binder precursor includes acrylates and methacrylates.
• a conventional thermal initiator or photoinitiator can be used as the initiator.
• the initiator include organic peroxide, azo commpounds, quinone, benzophenone, nitroxo compounds, halogenated acrylic, hydrazone, mercapto compounds, pyrylium compounds, triacrylimidazole, bisimidazole, chloroalkyl triazine, benzoin ether, benzyl ketal, thioxanthone, acetophenone, iodonium salt, sulfonium salt, and derivatives thereof.
• the abrasive particles are generally included in the curable composition in an amount of approximately 150 mass parts or more or approximately 200 mass parts or more, and approximately 1000 mass parts or less or approximately 700 mass parts or less, with regards to 100 mass parts of the binder precursor.
• the initiator is generally included in the curable composition in an amount of approximately 0.1 mass parts or more or approximately 0.5 mass parts or more, and approximately 10 mass parts or less or approximately 2 mass parts or less, with regards to 100 mass parts of the binder precursor.
• the backing material can be a polymer film such as polyester, polyimide, polyamide, and the like; paper; vulcanized fiber; molded or cast elastomers, processed nonwoven fabric or woven fabric; and the like.
• the backing material can be adhered to the abrasive layer using an adhesive layer.
• the thickness of the backing material can be generally set to
• Shape tracking properties may also be applied to the backing material with the backing material as an elastic material.
• a predetermined curvature may be applied to the backing material by pre-forming the backing material.
• the polishing function of the three-dimensional elements of the abrasive material is demonstrated at the top thereof.
• the abrasive material having an abrasive layer including abrasive particles and a binder the three-dimensional element is degraded from the top part during polishing, and unused abrasive particles are exposed. Therefore, by increasing the concentration of the abrasive particles existing in the top part of the three-dimensional element, the cutting properties and abrasion properties of the abrasive material can be increased, and thus the abrasive material can be advantageously used.
• the base part of the three-dimensional element in other words, the lower part of the abrasive layer adhered to the base material or integrally formed with the base material normally does not require a polishing function, and therefore, can be formed only by binders without including abrasive particles.
• the structured surface of the abrasive layer can include a three- dimensional element of various shapes. Examples of the three-dimensional element shape include a cylinder, an elliptic cylinder, a prism, a hemisphere, a semi-elliptical sphere, a cone, a pyramid, a truncated cone, a truncated pyramid, a hipped roof, and the like.
• the structured surface may also include a
• the structured surface may be a combination of a plurality of cylinders and a plurality of pyramids.
• a cross-sectional shape of the base part of the three-dimensional element may be different from the cross-sectional shape of the top part.
• the cross section of the base part may be a square shape whereas the cross section of the top part may be a circular shape.
• the three-dimensional element normally has a base part with a larger cross-sectional area than the cross-sectional area of the top part.
• the base part of the three- dimensional element may mutually or alternately contact, and the base part of adjacent three-dimensional elements can be separated from each other at a predetermined distance.
• a plurality of three-dimensional elements is systematically disposed on the structured surface.
• "systematically" used in relation to the position of the three-dimensional element means that three-dimensional elements with the same shape or similar shape are disposed repeatedly on the structured surface, along one or a plurality of directions on a level surface that is parallel to the abrasive surface.
• the one or a plurality of directions on a level surface that is parallel to the abrasive surface can be a linear direction, a concentric direction, helix (spiral) direction, or a combination thereof.
• the space existing between the three-dimensional elements can be disposed on the entire body of the structured surface in a pattern that is advantageous for flowing and discharging of a slurry, abrasive powder, and the like.
• the plurality of three-dimensional elements can be formed by a polycrystalline diamond depositing method by surface treating, laser treating, or CVD by a diamond wheel, cutting wheel, or injection molding, a method of filling a binder precursor in a metal three-dimensional element having a negative pattern of the structured surface, and then curing using heat or radiation, and the like, for example.
• FIG. 3A is an upper surface schematic view of a structured surface where a plurality of three-dimensional elements having a triangular pyramid shape are disposed.
• symbol o represents the length of the base of the three-dimensional element 12
• symbol p represents the distance between the top parts of the three-dimensional elements 12.
• the length of the bases of the triangular pyramid may be the same or different from each other, and the length of the sides may be the same or different from each other.
• o can be set to approximately 5 ⁇ or more or approximately 10 ⁇ or more, and approximately 1000 ⁇ or less or approximately 500 ⁇ or less
• p can be set to approximately 5 ⁇ or more or approximately 10 ⁇ or more, and approximately 1000 ⁇ or less or approximately 500 ⁇ or less
• the height h of the three-dimensional elements 12 can be set to approximately 2 ⁇ or more or approximately 4 ⁇ or more, and approximately 600 ⁇ or less or approximately 300 ⁇ or less.
• the variation of h is preferably approximately 20% or less than that of the height of the three- dimensional elements 12, and more preferably approximately 10% or less.
• FIG. 3B is an upper surface schematic diagram of a structured surface where a plurality of three-dimensional elements having a quadrangular pyramid shape are disposed.
• symbol o represents the length of the base of the three-dimensional elements 12
• symbol p represents the distance between the top parts of the three-dimensional elements 12.
• the length of the bases of the quadrangular pyramid may be the same or different from each other, and the length of the sides may be the same or different from each other.
• o can be set to approximately 5 ⁇ or more or approximately 10 ⁇ or more, and approximately 1000 ⁇ or less or approximately 500 ⁇ or less
• p can be set to approximately 5 ⁇ or more or approximately 10 ⁇ or more, and approximately 1000 ⁇ or less or approximately 500 ⁇ or less.
• the height h of the three-dimensional elements 12 can be set to
• the three-dimensional elements can be truncated triangular pyramids or truncated quadrangular pyramids.
• embodiments is generally configured of a triangular or quadrangular level surface that is parallel to the abrasive surface. Substantially all of the top surfaces preferably exist on the level surface that is parallel to the abrasive layer.
• FIG. 3C is an upper surface schematic view of a structured surface where a plurality of three-dimensional elements having a truncated quadrangular pyramid are disposed. A quadrangular pyramid shape before cutting the top portion is illustrated on the top left.
• symbol o represents the length of the base of the three-dimensional elements 12
• symbol u represents the distance between the bases of the three-dimensional elements 12
• symbol y represents the length of the sides of the top surface.
• the length of the bases of the truncated quadrangular pyramid may be the same or different from each other
• the length of the sides can be the same or different from each other
• the length of the sides of the top surface may be the same or different from each other.
• o can be set to approximately 5 ⁇ or more or
• the height h of the three-dimensional elements 12 can be set to approximately 5 ⁇ or more or approximately 10 ⁇ or more, and approximately 10,000 ⁇ or less or approximately 5000 ⁇ or less.
• the variation of h is preferably approximately 20% or less than that of the height of the three-dimensional elements 12, and more preferably approximately 10% or less.
• FIG. 3E is a cross-sectional schematic view of another embodiment of the present disclosure, and the plurality of three-dimensional elements 12 are laterally oriented triangular prisms, and have a ridge.
• the three-dimensional elements 12 are disposed on a base material 15, and are illustrated as a two-layer structure of an abrasive layer upper part 18 including abrasive particles and a binder, and an abrasive layer lower part 19 including a binder but not including abrasive particles.
• the ridge is preferably on a level surface that is parallel to the abrasive layer substantially across the entire body of the abrasive material. In some embodiments, substantially all ridges exist on the same level surface that is parallel to the abrasive layer. In FIG.
• a can be set to approximately 30 degrees or more or approximately 45 degrees or more, and approximately 150 degrees or less or approximately 140 degrees or less, w can be set to
• p can be set to
• u can be set to 0 ⁇ or more or approximately 2 ⁇ or more, and approximately 2000 ⁇ or less or approximately 1000 ⁇ or less
• h can be set to approximately 2 ⁇ or more or approximately 4 ⁇ or more, and approximately 600 ⁇ or less or approximately 300 ⁇ or less
• s can be set to approximately 5% or more or approximately 10% or more than the height h of the three-dimensional elements 12, and approximately 95% or less or approximately 90% or less.
• the variation of h is preferably approximately 20% or less than that of the height of the three- dimensional elements 12, and more preferably approximately 10% or less.
• the individual three-dimensional elements 12 illustrated in FIG. 3E may extend across the entire surface of the abrasive material. In this case, both end parts in the long base direction of the three-dimensional elements 12 are in the vicinity of the end parts of the abrasive material, and the plurality of three- dimensional elements 12 are disposed in a band shape.
• the three- dimensional elements have a hipped roof shape.
• a "hipped roof shape in the present disclosure indicates a three-dimensional shape with a side surface configured in two corresponding triangular shapes and two corresponding quadrangular shapes, wherein the adjacent triangular side surface and
• FIG. 3F is an upper surface schematic view of a structured surface where a plurality of three-dimensional elements having a hipped roof shape are disposed.
• FIG. 3F illustrates a hipped roof shape having a rectangular bottom surface.
• symbol 1 represents the length of the long base of the three-dimensional elements 12
• symbol x represents the distance between short bases of adjacent three-dimensional elements 12.
• 1 can be set to approximately 5 ⁇ or more or approximately 10 ⁇ or more, and approximately 10 mm or less or approximately 5 mm or less
• x can be set to 0 ⁇ or more or approximately 2 ⁇ or more, and approximately 2000 ⁇ or less or approximately 1000 ⁇ or less.
• the definitions and exemplary numerical ranges of symbols w, p and u, and although not illustrated in FIG. 3F, symbols h, s, a, and the like are the same as those described in FIG. 3E.
• the structured surface includes a combinations of a plurality of three-dimensional elements with various shapes.
• FIG. 3G illustrates an example of such an embodiment.
• the structured surface illustrated in FIG. 3G includes a combination of a first triangular pyramid 121 , a second triangular pyramid 122, a hexagonal pyramid 123, and a hipped roof 124.
• the length of the base of each of the three-dimensional elements can be set to approximately 5 ⁇ or more or 10 ⁇ or more, and approximately 1000 ⁇ or less or approximately 500 ⁇ or less, and the height can each be set to
• the distance between the bases of adjacent three-dimensional elements can be set to 0 ⁇ or more or approximately 2 ⁇ or more, and approximately 10,000 ⁇ or less or
• the density of the three-dimensional elements of the abrasive material in other words, the number of three-dimensional elements per 1 cm 2 of abrasive material is approximately 0.5 elements / cm 2 or more or 1.0 elements / cm 2 or more, and approximately 1 x 10 7 elements / cm 2 or less or approximately 4 x 10 6 elements / cm 2 or less.
• the number of three-dimensional elements per 1 cm 2 of abrasive material can be set to approximately 0.05 elements / cm 2 or more or approximately 0.10 elements / cm 2 or more, and approximately 1 x 10 6 elements / cm 2 or less or approximately 4 x 10 5 elements / cm 2 or less.
• abrasive material where the structured surface is covered by a surface coating layer such as diamond-like carbon or the like and abrasive material where the abrasive layer includes abrasive particles and resin binders are thought to cause charge-up on the structured surface or surface energy of the structured surface, and therefore, foreign objects are prone to cling to the structured surface electrostatically or by another interaction, as compared to conventional abrasive material having abrasive particles adhered on the base material by conductive Ni plating or the like.
• the surface energy of the structured surface can be reduced by the surface treating of these three-dimensional elements, and adhesion of foreign objects onto the structured surface such as adhesion or accumulation of abrasive particles in the abrasive slurry, organic compounds and the like, polyurethane particles generated from a polyurethane foam pad, and the like can be prevented or suppressed.
• fluoride treatment can be advantageously performed by plasma treatment, a chemical vapor deposition (CVD) method, a physical vapor deposition (PVD) method, or fluorine gas treatment.
• CVD chemical vapor deposition
• PVD physical vapor deposition
• “Plasma treatment” refers to a treatment of changing the chemical composition of the surface of the object to be treated using raw material gas activated by plasma, and the reaction product including material derived from the object to be treated is included on the plasma treated surface.
• a film including components derived from gas, liquid, or solid raw materials is formed by depositing on the surface of the object to be treated.
• the chemical vapor deposition method includes a thermal CVD method, a direct plasma enhanced CVD method, a remote plasma CVD method, a hot wire CVD method, and the like, for example.
• the physical vapor deposition method includes sputtering, vacuum deposition, arc spraying, plasma spraying, aerosol deposition methods, and the like.
• the fluoride treatments are thought to produce phenomena such as the fluorine being doped around the surface of the surface coating layer such as diamond-like carbon or abrasive particles, the surface of the materials being fluorine terminated due to the creation of a C-F bond in a polymer included in the binder, a coating including densified fluorocarbon that contains many C-C bonds being formed on the structured surface, and the like.
• fluoride treatment by plasma treatment or a chemical vapor deposition method can be performed using a low pressure plasma device with a pressure reducible chamber or an atmospheric pressure plasma device.
• the chemical vapor deposition method using a plasma device is generally referred to as a plasma enhanced CVD method. If using an
• atmospheric pressure plasma device nitrogen gas and / or group 18 atoms of the period table, specifically, helium, neon, argon, krypton, xenon, radon, and the like are used as the electric discharge gas, in addition to fluorine-containing gases.
• nitrogen, helium, and argon can be advantageously used, and nitrogen is particularly advantageous from the perspective of cost.
• the low pressure plasma device is generally used for batch treating. If continuous treatment of long webbing or the like is required, using an atmospheric pressure plasma device may be advantageous from the perspective of productivity.
• a conventional method such as corona discharge, dielectric barrier discharge such as single or dual RF discharge that uses a 13.56 MHz high frequency power source, 2.45 GHz microwave discharge, arc discharge, or the like can be used as a method for generating plasma.
• the single RF discharge using a 13.56 MHz high frequency power source can be
• Fluorocarbons such as CF 4 , C 4 Fs, C5F6, C 4 F 6 , CHF3, CH2F2, CH3F, C2F6, C3F8, C 4 Fio, C 6 Fi 4 , nitrogen trifluoride (NF 3 ), SF 6 , and the like can be used as the fluorine-containing gas used in plasma treatment or a chemical vapor deposition method. From the perspective of safety, reactivity, and the like, C3F8, C 6 Fi 4 , and CF 4 can be advantageously used.
• the flow rate of the fluorine-containing gas can be set to approximately 20 seem or more or
• the possibility of depositing a favorable film by setting the raw material gas C / F ratio to approximately 3 or less is known, and in this case, the C / F ratio can be adjusted by adding a nonfluorine-based gas such as acetylene, acetone, and the like.
• a nonfluorine-based gas such as acetylene, acetone, and the like.
• the fluoride treatment can be plasma treatment or chemical vapor deposition, or a combination thereof.
• the range of the bias voltage varies based on the size or design of the device or the like, but can generally be set to approximately 100 V or less, approximately 0 V or less to approximately - 1000 V or more, or approximately - 100,000 V or more.
• the applied power required for plasma generation can be determined based on the dimensions of the abrasive material to be treated, and the power density in the discharge space can be generally selected to be approximately 0.00003 W / cm 2 or more or approximately 0.0002 W / cm 2 or more, and approximately 10 W / cm 2 or less or approximately 1 W / cm 2 or less. For example, if the dimensions of the abrasive material to be fluoride treated are 10 cm (length) ⁇ 10 cm (width) or less, the applied power can be set to
• the temperature of plasma treatment or the chemical vapor deposition method is preferably a temperature that does not compromise the characteristics and performance of the abrasive material to be treated and the like, and the surface temperature of the abrasive material to be treated can be set to
• the surface temperature of the abrasive material can be measured by a thermocouple, a radiation thermometer, or the like that contacts the abrasive material.
• the treatment pressure when performing plasma treatment or the chemical vapor deposition method using a low pressure plasma device can be set to approximately 10 mTorr or more or approximately 20 mTorr or more, and approximately 1500 mTorr or less or approximately 1000 mTorr or less.
• the treatment time for plasma treatment or the chemical vapor deposition method can be set to approximately 2 seconds or more, approximately 5 seconds or more, or approximately 10 seconds or more, and approximately 300 seconds or less, approximately 180 seconds or less, or approximately 120 seconds or less.
• a remote plasma device can be used as the fluoride treatment by plasma treatment or the chemical vapor deposition method.
• the chemical vapor deposition method using the remote plasma device is generally referred to as a remote plasma CVD method.
• plasma is generated in a plasma excitation chamber which is different from the treating chamber, excitation activated species are generated by introducing a raw material gas in the plasma excitation chamber, the generated excitation activated species is flowed into the treating chamber together with a carrier gas such as nitrogen, helium, neon, argon, or the like, and therefore, fluoride treatment of the structured surface of the abrasive material is performed.
• a low pressure remote plasma device with a reduced pressure treating chamber, or an atmospheric pressure remote plasma device can be used as the remote plasma device.
• Electrical discharge gases that can be used and favorable electrical discharge gases are as described above for the low pressure plasma device and atmospheric pressure plasma device.
• High frequency (13.56 MHz) RF discharge, 2.45 GHz microwave discharge, 2.45 GHz microwave discharge / electron cyclotron resonance (ECR), and the like are generally used as the plasma generating method, and 2.45 GHz microwave discharge and 2.45 GHz microwave discharge / electron cyclotron resonance (ECR) are generally used as the plasma generating method, and 2.45 GHz microwave discharge and 2.45 GHz microwave discharge / electron cyclotron resonance (ECR) are
• Fluorocarbons such as CF 4 , C 4 Fs, C5F6, C 4 F 6 , CHF3, CH2F2, CH3F, C2F6, C3F8, C 4 Fio, C 6 Fi 4 , and the like, nitrogen trifluoride (NF 3 ), SF 6 , and the like can be used as the fluorine-containing gas used in plasma treatment or the chemical vapor deposition method using the remote plasma device.
• NF3 nitrogen trifluoride
• the flow rate of the fluorine-containing gas can be set to approximately 20 seem or more or approximately 50 seem or more, and approximately 1000 seem or less or approximately 500 seem or less.
• the flow rate of the carrier gas can be set to approximately 100 seem or more or approximately 200 seem or more, and approximately 5000 seem or less or approximately 200 seem or less.
• the possibility of depositing a favorable film by setting the raw material gas C / F ratio to approximately 3 or less is known, and in this case, the C / F ratio can be adjusted by adding a nonfluorine-based gas such as acetylene, acetone, and the like.
• a nonfluorine-based gas such as acetylene, acetone, and the like.
• the fluoride treatment can be plasma treatment or chemical vapor deposition, or a combination thereof.
• the range of the bias voltage varies based on the size or design of the device or the like, but can generally be set to approximately 100 V or less, approximately 0 V or less to approximately -1000 V or more, or approximately - 100,000 V or more.
• the applied power required in plasma generation can be set to
• fluoride treatment can be performed while maintaining the abrasive material to be treated at a low temperature.
• the surface temperature of the abrasive material to be treated can be set to approximately - 15°C or more, approximately 0°C or more, or approximately 15°C or more, and approximately 200°C or less, approximately 100°C or less, or approximately 50°C or less.
• the surface temperature of the abrasive material can be measured by a thermocouple, a radiation thermometer, or the like that contacts the abrasive material.
• the treating pressure when performing plasma treatment or a chemical vapor deposition method using a low pressure remote plasma device can be set to approximately 1 mTorr or more or approximately 10 mTorr or more, and approximately 1500 mTorr or less or approximately 1000 mTorr or less.
• the treatment time for plasma treatment or the chemical vapor deposition method can be set to approximately 2 seconds or more, approximately 5 seconds or more, or approximately 10 seconds or more, and approximately 300 seconds or less, approximately 180 seconds or less, or approximately 120 seconds or less.
• sputtering can be used as the fluoride treatment by the physical vapor deposition method.
• Sputtering can be performed using a typical sputtering device such as an ion sputtering device, a DC magnetron sputtering device, an RF magnetron sputtering device, or the like.
• Fluoropolymers such as polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVDF), and the like can be used as the sputtering target of fluoride treatment.
• Reactive sputtering may be performed by providing fluorocarbons such as CF 4 , C 4 F 8 , CsFe, C 4 F 6 , CHFs, CH2F2, CH3F, C 2 F 6 , CsFs, C 4 Fio, CeFi 4 , and the like, nitrogen fluoride (NF 3 ), SF 6 , and the like in the treating chamber.
• the sputtering temperature can be set to approximately - 193°C or more or approximately 25°C or more, and approximately 600°C or less or
• the treating pressure of sputtering can be set to approximately 1 x 10 "5 Torr or more or approximately 1 x 10 "3 Torr or more, and approximately 10 m Torr or less or approximately 100 mTorr or less.
• the treating time of sputtering can be set to approximately 1 second or more, approximately 5 seconds or more, or approximately 10 seconds or more, and approximately 30 seconds or less, approximately 60 seconds or less, or approximately 180 seconds or less.
• PTFE Polytetrafluoroethylene
• PVDF polyvinylidene fluoride
• CaF 2 calcium fluoride
• fluorine-containing organic compounds and the like can be used as a deposition source.
• the treating pressure of deposition can be set to approximately 1 x 10 "6 Torr or more or approximately 1 x 10 "5 Torr or more, and approximately 1 x 10 "3 Torr or less or approximately 1 x 10 "2 Torr or less.
• the treating time of deposition can be set to approximately 5 seconds or more, approximately 10 seconds or more, or approximately 30 seconds or more, and approximately 120 seconds or less, approximately 600 seconds or less, or approximately 1200 seconds or less.
• fluorine gas (F 2 ) treatment is used as the fluoride treatment.
• the fluorine gas may be diluted with inert gases such as nitrogen, helium, argon, carbon dioxide, and the like, and may also be used as is without diluting.
• the fluorine gas treatment is generally performed at atmospheric pressure.
• the temperature when the fluorine gas is contacted with the structured surface of the abrasive material can be set to room temperature or more, approximately 50°C or more, or approximately 100°C or more, and
• silicon treatment can be advantageously performed by plasma treatment, a chemical vapor deposition method, a physical vapor deposition method, or an atomic layer deposition method.
• silicon treatment is thought to produce a phenomenon where the structured surface is improved by forming a Si-O-Si bond, Si-C-Si bond, Si-O-C bond, and the like in the polymer that is included in the binder or on the surface of the abrasive particles or the surface coating such as diamondlike carbon or the like; where a coating including silicon oxycarbide or silicon oxide that has a relatively dense network structure formed through a Si-O-Si bond, Si-C-Si bond, Si-O-C bond, or the like is formed on the structured surface; or the like.
• Silicon treatment by plasma treatment or a chemical vapor deposition method can be performed using that low pressure plasma device, atmospheric pressure plasma device, low pressure remote plasma device, atmospheric pressure remote plasma device, and the like which are the same for the
• oxygen is added to the gas flow supplied to the plasma device.
• the oxygen may be supplied into the chamber of the plasma device through a separate line from the silicon-containing gas, or can be supplied as a mixed gas with the silicon- containing gas through a showerhead disposed in the chamber.
• the flow rate of the oxygen can be set to approximately 5 seem or more or approximately 10 seem or more, and approximately 500 seem or less or approximately 300 seem or less.
• the flow rate ratio of the oxygen and silicon-containing gas can be set to approximately 0.1 : 1 or more, approximately 0.2: 1 or more, or approximately 0.3 : 1 or more, and approximately 5 : 1 or less, approximately 4: 1 or less, or approximately 3 : 1 or less.
• post-treatment may be performed by supplying only oxygen at a flow rate of approximately 5 seem or more or approximately 10 seem or more, and approximately 500 seem or less or approximately 300 seem or less for example.
• the applied power required for plasma generation can be determined based on the dimensions of the abrasive material to be treated, and the power density in the discharge space can be generally selected to be approximately 0.00003 W / cm 2 or more or approximately 0.0002 W / cm 2 or more, and approximately 10 W / cm 2 or less or approximately 1 W / cm 2 or less. For example, if the dimensions of the abrasive material to be silicon treated are 10 cm (length) ⁇ 10 cm (width) or less, the applied power can be set to
• the temperature of plasma treatment or the chemical vapor deposition method is preferably a temperature that does not compromise the characteristics and performance of the abrasive material to be treated and the like, and the surface temperature of the abrasive material to be treated can be set to
• the surface temperature of the abrasive material can be measured by a thermocouple, a radiation thermometer, or the like that contacts the abrasive material.
• the treatment pressure when performing plasma treatment or the chemical vapor deposition method using a low pressure plasma device can be set to approximately 10 mTorr or more or approximately 20 mTorr or more, and approximately 1500 mTorr or less or approximately 1000 mTorr or less.
• the treatment time for plasma treatment or the chemical vapor deposition method can be set to approximately 2 seconds or more, approximately 5 seconds or more, or approximately 10 seconds or more, and approximately 300 seconds or less, approximately 180 seconds or less, or approximately 120 seconds or less.
• sputtering or vacuum deposition can be used as the silicon treatment by physical vapor deposition.
• Silicon treatment using the physical vapor deposition method can be performed using standard sputtering equipment such as the same ion sputtering equipment that was described for the fluoride treatment, DC magnetron sputtering equipment, RF magnetron
• the sputtering target of the silicon treatment can be silicon dioxide (S1O2).
• Reactive sputtering may be performed by supplying oxygen into the treatment chamber when using silicon (Si) as the sputtering target.
• the sputtering temperature can be set to approximately - 193°C or more or approximately 25°C or more, and approximately 600°C or less or
• the treating pressure of sputtering can be set to approximately 1 x 10 "5 Torr or more or approximately 1 x 10 "3 Torr or more, and approximately 10 m Torr or less or approximately 100 mTorr or less.
• the treating time of sputtering can be set to approximately 1 second or more, approximately 5 seconds or more, or approximately 10 seconds or more, and approximately 30 seconds or less, approximately 60 seconds or less, or approximately 180 seconds or less.
• Silicon dioxide S1O2
• Electron beam vapor deposition can be used as the vapor deposition source of the vacuum vapor deposition.
• the silicon treatment may be performed by the vapor deposition using silicon monoxide (SiO) as the vapor deposition source, and then performing annealing oxidation in an oxidizing atmosphere, and vapor depositing silicon monoxide while introducing oxygen plasma into the vapor deposition chamber.
• SiO silicon monoxide
• the deposition temperature can be set to approximately - 193°C or more or approximately 25°C or more, and approximately 600°C or less or
• the treating pressure of deposition can be set to approximately 1 x 10 "6
• Torr or more or approximately 1 x 10 "5 Torr or more, and approximately 1 x 10 "3 Torr or less or approximately 1 x 10 "2 Torr or less.
• the treating time of deposition can be set to approximately 5 seconds or more, approximately 10 seconds or more, or approximately 30 seconds or more, and approximately 120 seconds or less, approximately 600 seconds or less, or approximately 1200 seconds or less.
• an atom layer deposition method can be used as the silicon treatment.
• the atom layer deposition method includes alternatingly providing at least two types of precursor gases into a reaction chamber, depositing single layers of these precursor gases on the structured surface each time, and reacting these precursor gases on the structured surface.
• the flow rate of the precursor gas A can be set to approximately 0.1 seem or more or approximately 1 seem or more, and approximately 100 seem or less or approximately 1000 seem or less.
• the time for introducing the precursor gas A to the reaction chamber can be for approximately 0.01 seconds or longer, or approximately 0.1 seconds or longer, and approximately 10 seconds or shorter, or approximately 100 seconds or shorter.
• the flow rate of the precursor gas B can be set to approximately 0.1 seem or more or approximately 1 seem or more, and approximately 100 seem or less or approximately 1000 seem or less.
• the time for introducing the precursor gas B to the reaction chamber can be for approximately 0.01 seconds or longer, or approximately 0.1 seconds or longer, and approximately 10 seconds or shorter, or approximately 100 seconds or shorter.
• Unreacted precursor gas and/or reaction byproducts may be purged from the reaction chamber by introducing a purge gas into the reaction chamber between introducing the precursor gas A and introducing the precursor gas B.
• the purge gas is an inert gas that will not react with the precursor gas.
• Examples of the purge gas that can be used include nitrogen gas, helium, neon, argon, and mixtures thereof.
• the flow rate of the purge gas can be for example approximately 10 seem or more, or approximately 50 seem or more, and approximately 500 seem or less or approximately 1000 seem or less, and the introduction time of the purge gas can be approximately 1 second or longer, or approximately 10 seconds or longer and approximately 30 seconds or less, or approximately 60 seconds or less.
• a film including the predetermined thickness of silicon oxycarbide or silicon oxide can be formed on the structured surface by varying the number of times of introducing the precursor gases A and B, as well as the flow rate and introduction time of the precursor gases A and B.
• the reaction between the precursor gases A and B can be promoted by using heat, plasma, pulse plasma, helicon plasma, high density plasma, inductive coupled plasma, X-rays, electron beam, photons, remote plasma, and the like.
• the physical properties of the structured surface that was surface treated in this manner can be evaluated for example by the contact angle, hardness, and the like.
• the water contact angle of the surface treated structured surface was approximately 70° or higher, or approximately 90° or higher, and approximately 120° or lower or approximately 150° or lower.
• the water contact angle can be determined by the droplet method
• the water contact angle of the surface treated structured surface was approximately 0° or higher, or approximately 10° or higher, and approximately 30° or lower, or approximately 45° or lower.
• the water contact angle can be determined by the droplet method, expansion/contraction method, the Wilhelmy method, or the like.
• the hardness of the surface treated structured surface was approximately 40 or higher, or approximately 50 or higher, and approximately 87 or lower, or approximately 97 or lower, when converted to Shore hardness.
• the hardness of the surface treated structured surface can be determined for example by the nano indentation method.
• the adhesion of relatively soft foreign objects such as polymer particles of polyurethane or the like to the structured surface can be prevented if the hardness of the surface treated structured surface is approximately 50 or higher, when calculated as Shore hardness.
• an abrasive material including an abrasive layer having a structured surface configured with a plurality of three-dimensional elements arranged thereon, at least a portion of the structured surface including: (a) a film including a material selected from the group consisting of densified fluorocarbon, silicon oxycarbide, and silicon oxide; (b) fluorine terminated surface, or (c) a combination thereof.
• the densified fluorocarbon may include other atoms such as hydrogen, oxygen, nitrogen, and the like, in addition to carbon and fluorine.
• the densified fluorocarbon includes approximately 20 atomic % or more, or approximately 25 atomic % or more, and approximately 65 atomic % or less, or approximately 60 atomic % or less of carbon atoms based on the total amount of elements other than hydrogen.
• the densified fluorocarbon includes approximately 30 atomic % or more, or approximately 35 atomic % or more, and approximately 75 atomic % or less, or approximately 70 atomic % or less of carbon atoms based on the total amount of elements other than hydrogen.
• the densified fluorocarbon includes approximately 25 atomic % or more, or approximately 30 atomic % or more, and approximately 80 atomic % or less, or approximately 70 atomic % or less of quaternary carbon atoms bonded to 4 adjacent carbon atoms, based on the total amount of elements other than hydrogen.
• the atomic percentage of carbon atoms and fluorine atoms of the densified fluorocarbon can be determined by using XPS for example, and the atomic percentage of quaternary carbon atoms can be determined for example using 13C-NMR or the like.
• the silicon oxycarbide contains approximately 5 atomic % or more, or approximately 10 atomic % or more, and approximately 80 atomic % or less, or approximately 70 atomic % or less of oxygen atoms based on the total amount of elements other than hydrogen. Furthermore, in several other embodiments, the silicon oxycarbide contains approximately 1 atomic % or more, or approximately 5 atomic % or more, and approximately 90 atomic % or less, or approximately 80 atomic % or less of carbon atoms, based on the total amount of elements other than hydrogen.
• the atomic percentage of silicon atoms, oxygen atoms, and carbon atoms in the silicon oxycarbide can be determined by using XPS, TOF- SIOMS, and the like.
• the silicon oxide is a compound that includes silicon and oxygen, but may include other atoms such as hydrogen, nitrogen, and the like, excluding carbon. Silicon oxide, particularly silicon oxide having a Si-O-H bond on an end is generally hydrophilic, and may effectively prevent adhesion of
• the thickness of the film including densified fluorocarbon, silicon oxycarbide, and silicon oxide is generally approximately 0.05 nm or more, or approximately 0.5 nm or more, and approximately 200 ⁇ or less, or
• the structured surface of the abrasive material was fluoride treated
• abrasive materials of examples 1 and 2 as well as comparative examples 1 and 2 were attached to a disk and set in a Buehler (registered trademark) EcoMet (registered trademark) 4000 (produced by Buehler). Water was supplied to the polishing system in place of CMP slurry.
• the abrasive material was ultrasonically cleaned using water, and the structured surfaces of examples 1 and 2 were observed in detail using an optical microscope (enlarged 1500 times). Damage to the surface in particular was not observed with example 1 , but there was partial peeling of the silicon film with example 2.
• Abrasive material C Trizact (registered trademark) diamond disc 662 XA (produced by Sumitomo 3M)
• the structured surface of the abrasive materials A through C was fluoride treated (example 3) or silicon treated (examples 4 and 5) using a batch type capacity coupled plasma device WB 7000 (Plasma Therm Industrial Products, Inc.). Comparative example 3 was untreated (control test).
• the detailed treatment conditions of examples 3 through 5 are presented in Table 1.
• An adhesive sheet was applied to the back surface of abrasive materials A through C that were surface treated or untreated, and a disk with a diameter of 32 mm was punched out.
• a painted plate where black paint and clear paint (LX Clear produced by Nippon Paint) were coated onto a bonderized steel plate was attached to a device that could operate a sander in one horizontal direction, and one of the abrasive materials A through C was attached to the polishing surface of a 3M (registered trademark) polishing sander 3125 (produced by 3M) with 3 mm orbital movement, a load of 1 kgf was applied while rotating at
• the abrasive materials A through C were washed with water and the structured surface thereof was observed by an optical microscope (enlarged 300 times) (FIG. 5C).
• Examples 3 to 5 all demonstrated favorable cleaning properties as compared to comparative example 3, and examples 4 and 5 which were silicon treated demonstrated even more favorable cleaning properties.
• the surface of the abrasive material is generally washed with water after polishing several times, and therefore an abrasive material with favorable washing properties is extremely advantageous for this application.
• diamond tile pad 9 ⁇ (registered trademark) diamond tile pad 9 ⁇ (produced by 3M) was used as a polishing pad that was used for polishing a glass plate surface.
• the structured surface of the polishing pad was fluoride treated (example 6) or silicon treated (example 8) using a batch type capacity coupled plasma device WB 7000 (Plasma Therm Industrial Products, Inc.). Comparative example 4 was untreated (control test).
• the detailed treatment conditions of example 6 and 7 are presented in Table 1.
• the abrasive pad of examples 6 and 7 as well as comparative example 4 were attached to a disk and set in a Buehler (registered trademark) EcoMet (registered trademark) 4000 (produced by Buehler).
• LA-20 5% aqueous solution (produced by Neos) was applied to the polishing system as the polishing solution.
• Aoita Glass (produced by Asahi Glass) was polished for 150 minutes under conditions of a load of 80 N, upper plate rotational speed of 60 rpm, and lower plate rotational speed of 450 rpm. Cleaning of the structured surface of the polishing pad was not performed during polishing.
• Examples 6 and 7 both demonstrated favorable cleaning properties as compared to comparative example 4, and example 7 which was silicon treated demonstrated even more favorable cleaning properties.

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