WO2015108252A1 - 웨이퍼 그라인딩 장치 - Google Patents
웨이퍼 그라인딩 장치 Download PDFInfo
- Publication number
- WO2015108252A1 WO2015108252A1 PCT/KR2014/005048 KR2014005048W WO2015108252A1 WO 2015108252 A1 WO2015108252 A1 WO 2015108252A1 KR 2014005048 W KR2014005048 W KR 2014005048W WO 2015108252 A1 WO2015108252 A1 WO 2015108252A1
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- WIPO (PCT)
- Prior art keywords
- grinding
- wafer
- tooth
- grinding tooth
- grinding wheel
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/18—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor with cooling provisions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/10—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with cooling provisions
Definitions
- the present invention relates to a wafer grinding apparatus, and more particularly, to a wafer grinding apparatus capable of preventing deformation of a wafer due to rotation of a grinding wheel in contact with the wafer surface when polishing the surface of the wafer.
- a silicon wafer used to produce an electronic component such as a semiconductor device is a slicing process of thinly cutting a rod-shaped single crystal silicon ingot to maintain thickness and flatness of the cut wafer.
- an etching process to remove impurities or defects, a polishing process to improve surface damage or flatness, and a subsequent cleaning process. are manufactured.
- a grinding process for controlling the thickness and flatness of the silicon wafer is further performed by grinding the surface of the sliced silicon wafer in a step before the lapping process or the polishing process among the processes for manufacturing the silicon wafer.
- This grinding process is an additional process to meet the high flatness required as semiconductor devices become highly integrated.
- the flatness of the wafer is the total thickness variation (TTV) and the station representing the difference between the maximum and minimum thicknesses of the wafer.
- SBIR site backside ideal range
- LTV local thickness variation
- the conventional wafer grinding apparatus is composed of a spindle 10, a grinding wheel 11 attached and rotated below the spindle 10, and a chuck table 15 on which the wafer is adsorbed.
- the chuck table 15 When the wafer W is loaded on the chuck table 15, the chuck table 15 sucks the transferred wafer W using the vacuum pressure, and rotates the sucked wafer W at a constant speed. Then, the spindle 10, which is installed on the chuck table 15 so as to be spaced apart at predetermined intervals, rotates and descends to contact the wafer, and then polishing of the wafer is performed.
- the grinding wheel 11 consists of a rotating grinding body 12 and a grinding tooth 13 disposed at the lower edge of the grinding body 12.
- Conventional grinding wheel 11 is a plurality of grinding teeth 13 made of a diamond material is bonded by an adhesive at a predetermined interval is formed to protrude. Accordingly, in the conventional grinding wheel 11, when the silicon wafer is fixed to the chuck table 15, the grinding tooth 13 rotates and grinds on the wafer surface as the spindle 10 rotates at a high speed.
- a so-called clogging phenomenon occurs in which the polishing workpiece generated during polishing adheres to the microholes present on the processing surface of the grinding tooth 13, thereby lowering the polishing force of the grinding tooth 13, resulting in polishing the wafer to a target thickness.
- the polishing time for doing so becomes long. This not only lowers the yield of the wafer, but also degrades the flatness and nano quality of the wafer.
- the present invention is to solve the above-described problems, to provide a wafer grinding apparatus that can effectively cool the heat generated by the rotation of the grinding wheel when grinding the surface of the wafer to prevent the impact or heat applied to the wafer
- a wafer grinding apparatus that can effectively cool the heat generated by the rotation of the grinding wheel when grinding the surface of the wafer to prevent the impact or heat applied to the wafer
- An object of the present invention is to provide a wafer grinding apparatus capable of maintaining a constant polishing force on the processing surface of the grinding wheel by effectively discharging the polishing by-products accumulated on the grinding wheel to the outside of the wafer when grinding the wafer surface.
- An embodiment of the present invention includes a chuck table that rotates the adsorbed wafer at a constant speed by adsorbing the wafer when the wafer is loaded; And a spindle disposed above the chuck table at predetermined intervals, and rotating and lowering the spindle to grind the wafer adsorbed on the chuck table, wherein the spindle rotates at a predetermined speed to contact the wafer. And a driving wheel for lowering, and a grinding wheel formed at a lower end of the driving unit to grind the thickness of the wafer to a predetermined portion, wherein the grinding wheel is a grinding body and a grinding tooth formed in a segment shape along a circumference of the lower portion of the grinding body.
- the cooling unit may be provided along a rotation path of the grinding tooth in a predetermined area that is not in contact with the wafer from the point of leaving the wafer and the contact with the wafer again as the grinding tooth rotates.
- the cooling unit is characterized in that for reducing the temperature of the grinding wheel by spraying the cooling water or cooling gas to the rotating grinding tooth.
- the cooling unit may be formed in an area of an arc having an angle of 120 degrees with respect to the center of the grinding wheel from the point where the grinding tooth leaves the wafer according to the rotation direction of the grinding wheel.
- the cooling unit may include a main body formed in the shape of an arc matching the curvature of the grinding tooth with respect to the center of the grinding wheel, and a groove for providing a passage for passing the grinding tooth inside the main body.
- a plurality of side injection holes for injecting coolant or cooling gas to the side of the rotating grinding tooth and a plurality of lower surface injection holes for injecting the cooling water or cooling gas to the lower surface of the rotating grinding tooth are provided.
- a plurality of injection holes may be formed for injecting coolant or cooling gas to the rotating grinding tooth.
- a drying unit may be provided between the cooling unit and the wafer to dry the cooling water sprayed on the grinding tooth.
- the rotating grinding wheel leaves the wafer and passes through the inside of the cooling unit, thereby maintaining the temperature of the grinding wheel at a constant level so that deformation of the wafer occurs. You can prevent it.
- the abrasive by-products attached to the grinding wheel passing through the cooling unit are separated together with the coolant by the rotational force, so that the grinding force of the grinding wheel can be kept constant and the polishing quality of the wafer can be improved.
- FIG. 1 is a perspective view showing a conventional wafer grinding device
- FIG. 2 is a perspective view showing a wafer grinding apparatus according to an embodiment
- FIG. 3 is a plan view from above of the wafer grinding apparatus of FIG. 3 according to an embodiment
- FIG. 4 is a cross-sectional view taken along line AA ′ of FIG. 3;
- FIG. 5 is a plan view showing a wafer grinding apparatus according to an embodiment
- FIG. 6 is a graph showing a TTV of a wafer according to a conventional wafer grinding apparatus
- FIG. 7 is a graph showing a TTV of a wafer according to an embodiment
- the wafer grinding apparatus may absorb a wafer when the wafer is loaded, and then, on the chuck table 25 and an upper portion of the chuck table 25 to rotate the sucked wafer at a constant speed. It is disposed spaced apart from a predetermined interval, it may be configured to include a spindle 23 for grinding the wafer (W) adsorbed to the chuck table 25 by rotating and descending.
- the spindle 23 may include a driving unit for lowering a predetermined distance so as to contact the wafer while rotating at a predetermined speed, and a grinding wheel 20 formed at a lower end of the driving unit to grind a portion of the thickness of the wafer. have.
- the chuck table 25 may be formed in a disc shape having a somewhat wider size than the wafer so that the wafer may be seated, and a vacuum line may be vacuum-adsorbed on an inner side thereof by connecting a separate vacuum line.
- the grinding wheel 20 is composed of a grinding body 21 and a grinding tooth 22 formed in the form of segments of pieces along the circumference of the lower portion of the grinding body 21, and the grinding tooth 22 is in rotation. Cooling for cooling the grinding tooth 22 by cooling water or a cooling gas while passing through the grinding tooth 22 in a predetermined region that is not in contact with the wafer again from the point where the wafer leaves the wafer. Unit 30 may be included.
- the cooling unit 30 may be formed along the rotation path of the grinding wheel 20.
- the grinding tooth 22 may be formed along a path that passes as the rotation of the grinding tooth 22 rotates, and the grinding tooth 22 may be in contact with the wafer again from a point away from the wafer leaving the wafer by rotation. It may be formed in the shape of an arc having a predetermined angle with respect to the center.
- the cooling unit 30 is provided in the rotation path of the grinding tooth 22, corresponds to the rotation path, and is formed in an arc shape corresponding to the curvature of the grinding tooth 22, and the main body part 31 and the main body part 31.
- a groove portion 32 is formed into a groove of a predetermined size to provide a passage through which the grinding tooth 22 can pass. Therefore, when the grinding wheel 20 is lowered by the drive device of the spindle 23, a part of the grinding tooth 22 comes into contact with the wafer, and a part of the grinding tooth 22 is inserted into the groove 32.
- the main body 31 is disposed to surround the grinding tooth 22 while maintaining a constant distance so as not to directly contact the grinding tooth 22.
- FIG. 3 is a plan view from above of the wafer grinding apparatus of FIG. 3 according to an embodiment;
- the wafer W seated on the chuck table 25 is adsorbed by vacuum pressure, and the grinding wheel 20 is lowered by the driving device to contact the area including the center of the wafer.
- the adsorbed wafer is tilted downward by several micrometers by vacuum pressure, and the grinding wheel 20 actually grinds the region of B, and is polished in a fan shape in accordance with the rotation of the chuck table 25.
- the cooling unit 30 provided in the wafer grinding apparatus has a predetermined direction with respect to the center of the grinding wheel from the point where the grinding wheel 20 deviates from leaving the wafer, depending on the rotation direction of the grinding wheel 20. It may be formed to have a predetermined thickness in the region corresponding to the arc having an angle (). Preferably, the cooling unit 30 may be formed in an area in the shape of an arc having a 120 degree reference to the center of the grinding wheel from the point where the grinding wheel 20 is off the wafer.
- the cooling unit 30 is preferably formed at about 120 degrees with respect to the center of the grinding wheel 20 from the point where the grinding tooth leaves the wafer as described above.
- the wafer grinding apparatus includes a cooling unit 30 to lower the heat accumulated on the rotating grinding wheel 20, and the structure of the cooling unit 30 is as follows. .
- the cooling unit 30 has a main body portion 31 formed in an arc shape so as to surround a part of the grinding tooth 22 so as to correspond to the movement path of the grinding tooth 22 as described above, and the main body portion 31.
- the inside is provided with a predetermined groove 32 so that the grinding tooth 22 can pass while rotating.
- a plurality of injection holes 33 and 34 may be provided at side and bottom surfaces of the groove 32 to spray cooling water to lower the temperature of the rotating grinding tooth 22.
- the injection hole may be formed as a side injection hole 33 for injecting coolant to the side of the grinding tooth 22 and a bottom injection hole 34 for spraying coolant to the lower surface of the grinding tooth 22.
- the injection holes 33 and 34 have openings having a predetermined size, and the cooling water or the cooling gas is formed at a predetermined pressure with respect to the side and lower surfaces of the grinding tooth 22 moving inside the groove 32 of the cooling unit 30.
- Can spray The separation distance, number, size, etc. of the injection holes 33 and 34 may be formed differently according to the diameter of the wafer or the kind of grinding process.
- the side injection hole 33 and the bottom injection hole 34 may have an opening formed in a predetermined size in the extending direction of the groove, and each injection hole may be formed to have a predetermined separation distance.
- the side injection hole and the bottom injection hole may be formed such that the size of the opening gradually decreases according to the rotational direction of the grinding tooth, and the separation distance between the injection holes may gradually increase. Accordingly, at the initial point where the grinding tooth leaves the wafer, the temperature of the grinding tooth can be precisely controlled by lowering the temperature by spraying a relatively large amount of cooling water or cooling gas.
- the side injection holes 33 may be formed in plural along the moving direction of the grinding tooth on the side surface of the groove 32 formed in the cooling unit 30.
- the side injection holes 33 may be formed at different heights along the extending direction of the cooling unit 3. Therefore, the injection of the cooling water or the cooling gas can be entirely performed on the side of the grinding tooth 22 passing through the groove 32.
- the polishing by-products remaining in the grinding tooth 22 polished at the contact surface with the wafer may have a cleaning effect that is removed by passing through the cooling unit 30.
- polishing performed after contact between the wafer and the grinding tooth it is possible to maintain the temperature of the rising grinding wheel at a constant level to prevent deformation of the wafer.
- the injection holes 33 and 34 may be connected to each other in the cooling unit 30, and a lower portion of the cooling unit 30 may further include a supply pipe and a supply tank for supplying cooling water to the injection holes 33 and 34. Can be.
- the supply pipe may be connected to one end of the cooling unit 30, and may be controlled to supply a predetermined amount of cooling water or a cooling gas when the grinding tooth 22 rotates in contact with the wafer.
- the cooling of the grinding wheel 20 including the grinding tooth 22 can be performed by controlling the spraying of the cooling water or the cooling gas at a predetermined pressure.
- the groove 32 of the cooling unit 30 should be spaced apart by a predetermined distance so as not to be in direct contact with the grinding tooth 22 for the rotation of the grinding tooth 22, by a fixed base extending downward It can be fixed so as not to move.
- a circulation water circulating in the spindle 23 is supplied to the inside of the spindle 23 rotating at a predetermined speed to lower the heat of the spindle itself. Then, it is supplied to the grinding wheel 20 through the spindle, and is supplied to the grinding wheel 20 and the contact position of the wafer is provided with a supply path for lowering the heat of the polishing site, the grinding water is supplied through the supply path do.
- the grinding water is used to maintain the temperature of the grinding wheel and the internal device to maintain a constant temperature of 20 ⁇ 25 °C using ultra-pure water, and serves to lower the temperature of the grinding portion to the initial temperature of the grinding wheel (20) .
- the temperature of the cooling water injected through the injection holes 33 and 34 provided in the cooling unit 30 of the embodiment is preferably set to be equal to the temperature of the grinding water.
- the wafer grinding apparatus of the embodiment may include a drying unit 40 on one side of the cooling unit 30.
- the drying unit 40 is provided to dry the coolant sprayed on the grinding wheel 20, and may be disposed in a region between the grinding tooth passing through the cooling unit 30 and the polishing surface of the wafer.
- the cooling unit 30 is formed in an arc of 120 degrees with respect to the center of the grinding wheel 20 from the point where the grinding tooth 22 leaves the wafer, and the drying unit 40 is the grinding tooth 22. ) May be formed between the point of passing through the cooling unit 40 and the point of contact with the wafer again.
- the drying unit may be formed in the shape of an arc corresponding to the curvature of the outer circumferential surface of the grinding wheel, it may be formed spaced apart from the outer circumferential surface of the grinding wheel by a predetermined distance.
- the drying unit may be formed at a predetermined angle with respect to the center of the grinding wheel, for example, may be formed in an area of an arc of 120 degrees with respect to the center of the grinding wheel 20.
- a predetermined number of through holes may be formed in the drying unit 40, and dry air may be injected at a predetermined pressure from the through holes.
- dry air may be injected at a predetermined pressure from the through holes.
- the coolant buried in the grinding tooth 22 may be quickly dried and the abrasive by-products remaining in the grinding tooth 22 may also be more easily released from the grinding tooth 22.
- the drying unit 40 is preferably positioned slightly above the grinding tooth 22 to blow dry air downward relative to the grinding tooth 22.
- the grinding tooth 22 is cleaned and cooled of the abrasive by-products remaining in the grinding tooth due to the injection of the coolant while passing through the cooling unit 30, and the dry air injected during the passing through the drying unit 40.
- the drying of the cooling water remaining in the grinding tooth 22 can be achieved.
- FIG. 6 is a graph illustrating a TTV of a wafer according to a conventional wafer grinding apparatus
- FIG. 7 is a graph illustrating a TTV of a wafer according to an embodiment.
- the total thickness variation (TTV) of the wafer indicates the difference between the maximum thickness and the minimum thickness of the wafer during the grinding process. The smaller the TTV value is, the less the difference is controlled for each wafer. It can be estimated that the processing quality performed is high.
- the TTV value of the plurality of wafers was 1 ⁇ m or more, and the deviation of the TTV value for each wafer was also 1 ⁇ m or more.
- the TTV values for the plurality of wafers were found to be 1 ⁇ m or less, and the variation in the TTV values for each wafer was measured to be 0.5 ⁇ m or less.
- the rotating grinding wheel leaves the wafer and cools through the inside of the cooling unit at the same time, thereby maintaining the temperature of the grinding wheel at a constant level so that deformation of the wafer occurs. It is possible to improve the flatness quality of the wafer.
- the abrasive by-products attached to the grinding wheel passing through the cooling unit are removed together with the coolant by the rotational force, thereby maintaining the polishing force of the grinding wheel constant and improving the polishing quality of the wafer.
- this embodiment can be implemented in a wafer grinding apparatus for manufacturing a wafer, there is industrial applicability thereof.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
Claims (15)
- 웨이퍼가 로딩되면 웨이퍼를 흡착하여 상기 흡착된 웨이퍼를 일정 속도로 회전시키는 척 테이블; 및상기 척 테이블의 상부에 소정간격 이격되어 배치되며, 회전 및 하강하여 상기 척 테이블에 흡착된 웨이퍼를 그라인딩하는 스핀들;을 포함하고,상기 스핀들은 소정의 속도로 회전하면서 상기 웨이퍼에 접촉되도록 일정거리 하강시켜주는 구동유닛과, 상기 구동유닛 하단에 형성되어 웨이퍼의 두께를 일정부분 그라인딩하는 그라인딩휠로 이루어지고,상기 그라인딩휠은 그라인딩 본체와, 상기 그라인딩 본체 하부의 원주를 따라 분할된 세그먼트 형태로 형성된 그라인딩 투스로 이루어지며,상기 그라인딩 투스가 회전함에 따라 상기 웨이퍼를 이탈하는 지점에서부터 상기 웨이퍼와 다시 접촉하는 지점 사이에는 접촉되지 않는 소정의 영역에는 상기 그라인딩 투스의 회전경로를 따라 냉각 유닛이 마련되는 웨이퍼 그라인딩 장치.
- 제 1항에 있어서,상기 냉각 유닛은 회전하는 상기 그라인딩 투스에 냉각수 또는 냉각 기체를 분사하는 웨이퍼 그라인딩 장치.
- 제 1항에 있어서,상기 냉각 유닛은, 상기 그라인딩휠의 회전방향에 따라 상기 그라인딩 투스가 상기 웨이퍼를 이탈하는 지점에서부터 상기 그라인딩휠의 중심을 기준으로 120도에 해당하는 호의 영역에형상으로 제작되는 형성되는 웨이퍼 그라인딩 장치.
- 제 1항에 있어서,상기 냉각 유닛은 상기 그라인딩휠의 중심을 기준으로 상기 그라인딩 투스의 곡률과 일치하는 호의 형상으로 형성된 본체부와, 상기 본체부 내부에 상기 그라인딩 투스가 지나가기 위한 통로를 제공하는 홈부로 이루어진 웨이퍼 그라인딩 장치.
- 제 4항에 있어서,상기 그라인딩휠이 하강함에 따라 그라인딩 투스의 일정부분이 상기 홈부로 삽입되며, 상기 본체부홈부는 상기 그라인딩 투스의 측면 및 하면과와 일정한 거리를 유지하면서 상기 그라인딩 투스를 둘러싸는 웨이퍼 그라인딩 장치.
- 제 5항에 있어서,상기 홈부의 하면 및 측면에는, 회전하는 그라인딩 투스의 측면에 대해 냉각수 또는 냉각기체를 분사하기 위한하는 복수개의 측면 분사홀과 회전하는 그라인딩 투스의 하면에 대해 냉각수 또는 냉각기체를 분사하는 복수개의 하면 분사홀이 형성되는 웨이퍼 그라인딩 장치.
- 제 6항에 있어서,상기 측면 분사홀 및 하면 분사홀은 상기 홈부의 연장 방향에 따라 소정 크기로 형성된 개구부를 가지며, 각 분사홀들은 소정의 이격 거리를 갖도록 형성되는 웨이퍼 그라인딩 장치.
- 제 7항에 있어서,상기 측면 분사홀 및 하면 분사홀은 그라인딩 투스의 회전방향에 따라 점차 개구부의 크기가 작아지도록 형성되며, 분사홀 간의 이격 거리가 점차 커지도록 형성되는 웨이퍼 그라인딩 장치.
- 제 6항에 있어서,상기 측면 분사홀은 상기 홈부의 측면에서 서로 다른 높이를 가지도록 형성되는 웨이퍼 그라인딩 장치.
- 제 6항에 있어서,상기 분사홀들은 상기 냉각 유닛 내부에서 서로 연결되며, 어느 하나의 분사홀과 연결되는 공급관을 더 포함하는 웨이퍼 그라인딩 장치.
- 제 10항에 있어서,상기 공급관과 연결되는 공급탱크를 더 포함하며, 상기 공급탱크에 저장되는 냉각수 또는 냉각 기체는 기설정된 온도로 유지되는 웨이퍼 그라인딩 장치.
- 제 1항에 있어서,상기 그라인딩 투스가 상기 냉각 유닛을 통과하는 지점에서부터 상기 웨이퍼와 다시 접촉하는 지점 사이에는 상기 그라인딩 투스에 분사된 냉각수를 건조시키기 위한 건조 유닛이 마련되는 웨이퍼 그라인딩 장치.
- 제 12항에 있어서,상기 건조 유닛은 상기 그라인딩휠의 외주면의 곡률에 대응되는 호의 형상으로 형성되며, 상기 그라인딩휠의 중심을 기준으로 소정의 각도로 형성되는 웨이퍼 그라인딩 장치.
- 제 13항에 있어서,상기 건조 유닛은 상기 그라인딩휠의 외주면과 소정의 거리만큼 이격되며, 상기 건조 유닛에는 상기 그라인딩휠의 중심 방향으로 복수개의 관통홀이 형성되어 냉각 유닛을 통과한 그라인딩 투스에 건조 공기를 분사하는 웨이퍼 그라인딩 장치.
- 제 1항에 있어서,상기 스핀들 내부에는 상기 그라인딩휠과 웨이퍼가 접촉하는 지점에 연삭수를 공급하기 위한 공급로가 마련되며, 상기 그라인딩 투스에 분사되는 냉각수의 온도는 상기 연삭수의 온도와 동일하게 설정되는 웨이퍼 그라인딩 장치.
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JP2016563763A JP6218343B2 (ja) | 2014-01-15 | 2014-06-09 | ウェハ研削装置 |
EP14878856.5A EP3096348B1 (en) | 2014-01-15 | 2014-06-09 | Wafer grinding device |
CN201480073418.3A CN105917447B (zh) | 2014-01-15 | 2014-06-09 | 晶片磨削装置 |
US15/110,405 US10343257B2 (en) | 2014-01-15 | 2014-06-09 | Wafer grinding device |
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KR1020140004854A KR101530269B1 (ko) | 2014-01-15 | 2014-01-15 | 웨이퍼 그라인딩 장치 |
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GB201418175D0 (en) * | 2014-10-14 | 2014-11-26 | Pilkington Group Ltd | An apparatus and a process for grinding an edge and a glazing having a ground edge |
JP5969720B1 (ja) * | 2016-02-17 | 2016-08-17 | 日本精工株式会社 | 研削装置 |
CN106271922B (zh) * | 2016-08-30 | 2018-05-25 | 重庆凯龙科技有限公司 | 用于隔热板的加工装置 |
JP6506797B2 (ja) * | 2017-06-09 | 2019-04-24 | Towa株式会社 | 研削装置および研削方法 |
JP7045212B2 (ja) * | 2018-02-08 | 2022-03-31 | 株式会社ディスコ | 研削装置 |
JP2021176661A (ja) * | 2020-05-07 | 2021-11-11 | 株式会社ディスコ | 研削装置 |
CN115847293A (zh) * | 2022-12-15 | 2023-03-28 | 西安奕斯伟材料科技有限公司 | 研磨清洗设备 |
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- 2014-06-09 CN CN201480073418.3A patent/CN105917447B/zh active Active
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EP3096348B1 (en) | 2019-04-17 |
JP2017501899A (ja) | 2017-01-19 |
CN105917447A (zh) | 2016-08-31 |
US10343257B2 (en) | 2019-07-09 |
US20160318152A1 (en) | 2016-11-03 |
KR101530269B1 (ko) | 2015-06-23 |
EP3096348A1 (en) | 2016-11-23 |
JP6218343B2 (ja) | 2017-10-25 |
EP3096348A4 (en) | 2017-10-18 |
CN105917447B (zh) | 2019-09-10 |
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