JP7143024B2 - チャックテーブル及びウェーハの加工方法 - Google Patents
チャックテーブル及びウェーハの加工方法 Download PDFInfo
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- JP7143024B2 JP7143024B2 JP2018159595A JP2018159595A JP7143024B2 JP 7143024 B2 JP7143024 B2 JP 7143024B2 JP 2018159595 A JP2018159595 A JP 2018159595A JP 2018159595 A JP2018159595 A JP 2018159595A JP 7143024 B2 JP7143024 B2 JP 7143024B2
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- 238000003672 processing method Methods 0.000 title claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 77
- 238000005520 cutting process Methods 0.000 claims description 69
- 239000012530 fluid Substances 0.000 claims description 44
- 239000011148 porous material Substances 0.000 claims description 19
- 239000002173 cutting fluid Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 164
- 230000032258 transport Effects 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 239000000428 dust Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
4 基台
4a,4b,4c 開口
6 カセット載置台
8 カセット
10 X軸移動テーブル
11 ウェーハ
11a 表面
11b 裏面
11c 外周部
11d 切削溝
12 防塵防滴カバー
14 チャックテーブル
14a 保持面
14b、14b1、14b2、14b3、14b4 外周吸引穴
14c 噴出口
14d 吸引路
14e 流体供給路
14f 接続点
14g1、14g2、14g3、14g4 平坦部
15 デバイス
16 搬送装置
17 切り欠き部
18 第1の支持構造
20 第1のレール
22 第1の昇降ユニット
24 第1の搬送ユニット
24a 吸引面
24b 吸引パッド
26 第2のレール
28 第2の昇降ユニット
30 第2の搬送ユニット
32 第2の支持構造
34 移動ユニット
36 ブレードユニット
36a スピンドル
36b ノズル
36c 切削液
36d 使用後の切削液
38 切削ブレード
40 洗浄ユニット
42 電磁バルブ
44 吸引源
46 電磁バルブ
48 流体供給源
Claims (7)
- ウェーハの表面に切削液を供給しながら切削ブレードを切り込ませ、該ウェーハの該表面とは反対側の裏面に至らない切削溝を形成する切削装置のチャックテーブルであって、
該ウェーハを保持する保持面と、
該ウェーハに覆われる該保持面の一部において該ウェーハの外周部に対応する位置に設けられた、1つながりの環状の、又は、環状に配置された複数の円弧状の外周吸引穴と、
該外周吸引穴に接続され、吸引源からの負圧を該外周吸引穴に作用させる吸引路と、を備え、
該外周吸引穴を除く該保持面は、非多孔質材料からなり、
該外周吸引穴は、該保持面の径方向において1mm以上2mm以下の幅を有することを特徴とする切削装置のチャックテーブル。 - 該保持面の該外周吸引穴よりも中央部側に位置し、該ウェーハの中央部に対応して設けられ、該保持面から該ウェーハを剥離するときに流体を噴出する噴出口と、
該噴出口と流体供給源とを接続する流体供給路と、を更に備えることを特徴とする請求項1記載の切削装置のチャックテーブル。 - 該保持面において該外周吸引穴及び該噴出口を除く領域は、面一且つ平坦であることを特徴とする請求項2に記載の切削装置のチャックテーブル。
- 該保持面は、それぞれ非多孔質の金属、ガラス、又は、セラミックスで形成されていることを特徴とする請求項1から3のいずれかに記載の切削装置のチャックテーブル。
- 切削装置のチャックテーブルで保持されたウェーハを加工するウェーハの加工方法であって、
該チャックテーブルは、該ウェーハを保持する保持面と、該ウェーハに覆われる該保持面の一部において該ウェーハの外周部に対応する位置に設けられた、1つながりの環状の、又は、環状に配置された複数の円弧状の外周吸引穴と、該外周吸引穴に接続され、吸引源からの負圧を該外周吸引穴に作用させる吸引路と、を有し、該外周吸引穴を除く該保持面は非多孔質材料からなり、該外周吸引穴は、該保持面の径方向において1mm以上2mm以下の幅を有し、
該ウェーハの加工方法は、
該チャックテーブルで保持された該ウェーハの表面に切削液を供給しながら切削ブレードを切り込ませ、該ウェーハの該表面とは反対側の裏面に至らない切削溝を形成する、切削溝形成ステップ
を備えることを特徴とするウェーハの加工方法。 - 該チャックテーブルは、
該保持面の該外周吸引穴よりも中央部側に位置し、該ウェーハの中央部に対応して設けられ、該保持面から該ウェーハを剥離するときに流体を噴出する噴出口と、
該噴出口と流体供給源とを接続する流体供給路と、
を更に有し、
該ウェーハの加工方法は、
該切削溝形成ステップの後、該噴出口から該流体を噴出させて該ウェーハを該保持面から剥離させ、剥離後に、該チャックテーブルの上方に配置された搬送ユニットにより該ウェーハを搬送する、剥離搬送ステップ
を更に備えることを特徴とする請求項5に記載のウェーハの加工方法。 - 該噴出口から噴出される該流体は水であることを特徴とする請求項6に記載のウェーハの加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018159595A JP7143024B2 (ja) | 2018-08-28 | 2018-08-28 | チャックテーブル及びウェーハの加工方法 |
KR1020190087125A KR20200024707A (ko) | 2018-08-28 | 2019-07-18 | 척 테이블 및 웨이퍼의 가공 방법 |
CN201910756695.9A CN110867398B (zh) | 2018-08-28 | 2019-08-16 | 卡盘工作台和晶片的加工方法 |
TW108130351A TWI815953B (zh) | 2018-08-28 | 2019-08-23 | 卡盤台以及晶圓加工方法 |
Applications Claiming Priority (1)
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JP2018159595A JP7143024B2 (ja) | 2018-08-28 | 2018-08-28 | チャックテーブル及びウェーハの加工方法 |
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JP2020032478A JP2020032478A (ja) | 2020-03-05 |
JP7143024B2 true JP7143024B2 (ja) | 2022-09-28 |
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JP (1) | JP7143024B2 (ja) |
KR (1) | KR20200024707A (ja) |
CN (1) | CN110867398B (ja) |
TW (1) | TWI815953B (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014179355A (ja) | 2011-07-04 | 2014-09-25 | Asahi Glass Co Ltd | ガラス基板の剥離方法及びその装置 |
JP2015164753A (ja) | 2014-03-03 | 2015-09-17 | 株式会社ディスコ | 加工装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003007653A (ja) | 2001-06-26 | 2003-01-10 | Disco Abrasive Syst Ltd | 半導体ウェーハの分割システム及び分割方法 |
JP2010177376A (ja) * | 2009-01-28 | 2010-08-12 | Disco Abrasive Syst Ltd | 洗浄装置 |
JP2011014783A (ja) * | 2009-07-03 | 2011-01-20 | Disco Abrasive Syst Ltd | 切削装置のチャックテーブル |
JP5926501B2 (ja) * | 2011-06-15 | 2016-05-25 | 東京応化工業株式会社 | 保持装置および保持方法 |
JP5976312B2 (ja) * | 2011-12-22 | 2016-08-23 | 株式会社ディスコ | ウェーハ保持装置 |
-
2018
- 2018-08-28 JP JP2018159595A patent/JP7143024B2/ja active Active
-
2019
- 2019-07-18 KR KR1020190087125A patent/KR20200024707A/ko not_active Application Discontinuation
- 2019-08-16 CN CN201910756695.9A patent/CN110867398B/zh active Active
- 2019-08-23 TW TW108130351A patent/TWI815953B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014179355A (ja) | 2011-07-04 | 2014-09-25 | Asahi Glass Co Ltd | ガラス基板の剥離方法及びその装置 |
JP2015164753A (ja) | 2014-03-03 | 2015-09-17 | 株式会社ディスコ | 加工装置 |
Also Published As
Publication number | Publication date |
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CN110867398B (zh) | 2024-03-19 |
TW202010042A (zh) | 2020-03-01 |
TWI815953B (zh) | 2023-09-21 |
KR20200024707A (ko) | 2020-03-09 |
JP2020032478A (ja) | 2020-03-05 |
CN110867398A (zh) | 2020-03-06 |
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