Classifications

• • E—FIXED CONSTRUCTIONS
  • E04—BUILDING
  • E04B—GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
  • E04B1/00—Constructions in general; Structures which are not restricted either to walls, e.g. partitions, or floors or ceilings or roofs
  • E04B1/62—Insulation or other protection; Elements or use of specified material therefor
  • E04B1/74—Heat, sound or noise insulation, absorption, or reflection; Other building methods affording favourable thermal or acoustical conditions, e.g. accumulating of heat within walls
  • E04B1/76—Heat, sound or noise insulation, absorption, or reflection; Other building methods affording favourable thermal or acoustical conditions, e.g. accumulating of heat within walls specifically with respect to heat only
  • E04B1/78—Heat insulating elements
  • E04B1/80—Heat insulating elements slab-shaped
• • E—FIXED CONSTRUCTIONS
  • E04—BUILDING
  • E04B—GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
  • E04B1/00—Constructions in general; Structures which are not restricted either to walls, e.g. partitions, or floors or ceilings or roofs
  • E04B1/62—Insulation or other protection; Elements or use of specified material therefor
  • E04B1/74—Heat, sound or noise insulation, absorption, or reflection; Other building methods affording favourable thermal or acoustical conditions, e.g. accumulating of heat within walls
  • E04B1/76—Heat, sound or noise insulation, absorption, or reflection; Other building methods affording favourable thermal or acoustical conditions, e.g. accumulating of heat within walls specifically with respect to heat only
  • E04B1/78—Heat insulating elements
  • E04B1/80—Heat insulating elements slab-shaped
  • E04B1/803—Heat insulating elements slab-shaped with vacuum spaces included in the slab
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/08—Oxides
  • C23C14/081—Oxides of aluminium, magnesium or beryllium
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/10—Glass or silica
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/14—Metallic material, boron or silicon
  • C23C14/20—Metallic material, boron or silicon on organic substrates
  • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
• • E—FIXED CONSTRUCTIONS
  • E04—BUILDING
  • E04B—GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
  • E04B1/00—Constructions in general; Structures which are not restricted either to walls, e.g. partitions, or floors or ceilings or roofs
  • E04B1/62—Insulation or other protection; Elements or use of specified material therefor
  • E04B1/92—Protection against other undesired influences or dangers
  • E04B1/94—Protection against other undesired influences or dangers against fire
  • E04B1/941—Building elements specially adapted therefor
  • E04B1/942—Building elements specially adapted therefor slab-shaped
• • E—FIXED CONSTRUCTIONS
  • E04—BUILDING
  • E04C—STRUCTURAL ELEMENTS; BUILDING MATERIALS
  • E04C2/00—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels
  • E04C2/02—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by specified materials
  • E04C2/26—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by specified materials composed of materials covered by two or more of groups E04C2/04, E04C2/08, E04C2/10 or of materials covered by one of these groups with a material not specified in one of the groups
  • E04C2/284—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by specified materials composed of materials covered by two or more of groups E04C2/04, E04C2/08, E04C2/10 or of materials covered by one of these groups with a material not specified in one of the groups at least one of the materials being insulating
  • E04C2/296—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by specified materials composed of materials covered by two or more of groups E04C2/04, E04C2/08, E04C2/10 or of materials covered by one of these groups with a material not specified in one of the groups at least one of the materials being insulating composed of insulating material and non-metallic or unspecified sheet-material
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
  • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
  • F16L59/00—Thermal insulation in general
  • F16L59/02—Shape or form of insulating materials, with or without coverings integral with the insulating materials
  • F16L59/029—Shape or form of insulating materials, with or without coverings integral with the insulating materials layered
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
  • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
  • F16L59/00—Thermal insulation in general
  • F16L59/06—Arrangements using an air layer or vacuum
  • F16L59/065—Arrangements using an air layer or vacuum using vacuum
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B2607/00—Walls, panels
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
  • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
  • B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B38/00—Ancillary operations in connection with laminating processes
  • B32B38/0008—Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation
• • E—FIXED CONSTRUCTIONS
  • E04—BUILDING
  • E04B—GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
  • E04B1/00—Constructions in general; Structures which are not restricted either to walls, e.g. partitions, or floors or ceilings or roofs
  • E04B1/62—Insulation or other protection; Elements or use of specified material therefor
  • E04B1/74—Heat, sound or noise insulation, absorption, or reflection; Other building methods affording favourable thermal or acoustical conditions, e.g. accumulating of heat within walls
  • E04B1/76—Heat, sound or noise insulation, absorption, or reflection; Other building methods affording favourable thermal or acoustical conditions, e.g. accumulating of heat within walls specifically with respect to heat only
  • E04B2001/7679—Means preventing cold bridging at the junction of an exterior wall with an interior wall or a floor
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
  • Y02A30/00—Adapting or protecting infrastructure or their operation
  • Y02A30/24—Structural elements or technologies for improving thermal insulation
  • Y02A30/242—Slab shaped vacuum insulation
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
  • Y02B80/00—Architectural or constructional elements improving the thermal performance of buildings
  • Y02B80/10—Insulation, e.g. vacuum or aerogel insulation

Definitions

• the present disclosure relates to durable barrier films.
• the present disclosure further provides vacuum insulated panels employing these barrier films.
• a vacuum insulated panel is a form of thermal insulation consisting of a nearly gas-tight envelope surrounding a core, from which the air has been evacuated. It is used in, e.g. appliances and building construction to provide better insulation performance than conventional insulation materials. Since the leakage of air into the envelope would eventually degrade the insulation value of a VIP, known designs use foil laminated with heat-sealable material as the envelope to provide a gas barrier. However, the high thermal conductivity of the foil decreases the overall VIP thermal insulation performance due to the thermal bridging effect. On the other hand, metalized polymer substrates, like those used for food-grade packaging film, have low thermal conductivity, but do not meet the barrier requirements for VIP. There exists a need for an envelope film which combines high barrier capabilities with a low thermal conductivity and a low emissivity features.
• the present disclosure provides a barrier film with exceptional utility for use as the envelope for vacuum insulated panels. It combines puncture resistance, low-emissivity, and low-thermal conductivity.
• the present disclosure provides a vacuum insulation panel envelope comprising a substrate having two opposing major surfaces; a first layer in direct contact with one of the opposing major surfaces of the substrate, wherein the first layer is a low thermal conductivity organic layer or a low thermal conductivity inorganic stack; a second layer in direct contact with the first layer, wherein the second layer is a low thermal conductivity organic layer or a low thermal conductivity inorganic stack, and wherein the second layer is not the same as that selected in the first layer.
• the low thermal conductivity inorganic stack will include low thermal conductivity non-metallic inorganic materials, and/or low thermal
• the low thermal conductivity inorganic stack may also have low thermal conductivity metallic materials and low emissivity metallic materials. Further the low thermal conductivity metallic may itself comprise a metal alloy having low emissivity.
• an additional low conductivity organic layer may be present.
• An optional heat seal layer may also be present.
• a blend of linear low-density polyethylene and low-density polyethylene is considered suitable.
• a heat seal layer may be applied to the barrier film by extrusion, coating, or lamination. It may be convenient that the envelope have fire retardant properties.
• the substrate may itself comprise a flame retardant material, or a separate flame retardant layer may be positioned in direct contact with an opposing major surface of the substrate opposite the first layer. It may be convenient for the vacuum insulation panel to further comprise a core layer.
• Vacuum insulation panel envelopes according to the present disclosure desirably have an oxygen transmission rate of less than 0.1 cc/m 2 /day and a moisture vapor transmission rate of less than 0.1 g/m 2 /day. Some of the embodiments of the present disclosure have an oxygen transmission rate of less than 0.005 cc/m 2 /day and a moisture vapor transmission rate of less than 0.005 g/m 2 /day.
• the present disclosure provides a barrier film comprising: a substrate having two opposing major surfaces; a first layer in direct contact with one of the opposing major surfaces of the substrate, wherein the first layer is a low thermal conductivity organic layer or a low thermal conductivity inorganic stack; and a second layer in direct contact with the first layer, wherein the second layer is a low thermal conductivity organic layer or a low thermal conductivity inorganic stack, and wherein the second layer is not the same as that selected in the first layer, and wherein the low thermal conductivity inorganic stack comprises at least one low thermal conductivity non-metallic inorganic material and at least one low thermal conductivity metallic material.
• FIG. 1 is a side view of an exemplary vacuum insulation panel envelope according to the present invention.
• FIG. 2 is a front view of an exemplary vacuum insulation panel employing the envelope of FIG. 1.
• layer refers to any material or combination of materials on or overlaying a substrate.
• stack refers to an arrangement where a particular layer is placed on at least one other layer but direct contact of the two layers is not necessary and there could be an intervening layer between the two layers.
• (co)polymer or “(co)polymeric” includes homopolymers and copolymers, as well as homopolymers or copolymers that may be formed in a miscible blend, e.g., by coextrusion or by reaction, including, e.g., transesterification.
• copolymer includes random, block, graft, and star copolymers.
• barrier film 20 includes substrate 22 which has first 24 and second 26 major surfaces. In direct contact with the first major surface 24 of the substrate 22 is a first layer 30, which is in turn in contact with second layer 40.
• first layer 30 and second layer 40 may actually be applied in either order to substrate 22 and still achieve suitable barrier properties, and either order is considered within the scope of the present disclosure.
• First layer 30 in some embodiments, such as the depicted embodiment, is a low thermal conductivity organic layer 32. Additionally, good flexibility, toughness, and adhesion to the selected substrate are considered desirable.
• the low thermal conductivity organic layer 32 may be prepared by conventional coating methods such as roll coating (e.g., gravure roll coating) or spray coating (e.g., electrostatic spray coating) the monomer, and then crosslinking by using, e.g., ultraviolet light radiation.
• the low thermal conductivity organic layer 32 may also be prepared by flash evaporation of the monomer, vapor deposition, followed by crosslinking, as described in the following U.S. Pat. No. 4,842,893 (Yializis et al); U.S. Pat. No.
• Second layer 40 in some embodiments is a low thermal conductivity inorganic stack (collectively 44, 46, and 48 in the depicted embodiment).
• This low thermal conductivity inorganic stack includes at least one low thermal conductivity non-metallic inorganic material 44 and at least one low thermal conductivity metallic inorganic material 46.
• Low thermal conductivity non-metallic inorganic material 44 preferably has a thermal conductivity of no more than 0.5, or even 0.015 W/(m « °K).
• Low thermal conductivity metallic inorganic material 46 preferably has a thermal conductivity of no more than 1, or even 0.2 W/(m » °K). Another property useful in a suitable low thermal conductivity metallic inorganic material 46 is a low level of emissivity, with values less than 0.6, or even 0.1 considered desirable.
• an optional second low thermal conductivity metallic inorganic material 48 is present to provide desirable physical properties.
• a layer of silicon aluminum provides the properties of flexibility and faster deposition compared to the silicon aluminum oxide layer just discussed.
• Such layers are conveniently applied by sputtering, and a thickness between about 10 and 50 nm is considered convenient, with approximately 20 nm in thickness being considered particularly suitable.
• Some embodiments such as the depicted embodiment further include an optional polymeric layer 50 applied to the second layer 40 on the side away from the substrate 22. Such a layer may be employed to physically protect the non-metallic inorganic material 44.
• Some embodiments may include additional layers in order to achieve desirable properties. For example, if additional barrier properties are deemed desirable, an additional layer of non-metallic inorganic material may optionally be applied, including, e.g. above the protective second polymer layer.
• FIG. 2 a front view of a completed vacuum insulation panel 100 employing the envelope of FIG. 1 is illustrated.
• Two sheets of barrier film 20a and 20b have been attached face to face, conveniently by heat welding, to form vacuum insulation panel envelope 102.
• a core 104 Within the envelope 102, is a core 104, seen in outline in this view.
• the core 104 is vacuum sealed within envelope 102.
• the substrate 22 is conveniently a polymeric layer. While diverse polymers may be used, when the barrier film is used for vacuum insulated panels, puncture resistance and thermal stability are properties to be particularly prized.
• useful polymeric puncture resistant films include polymers such as polyethylene (PE), polyethylene terephthalate (PET), polypropylene (PP), polyethylene napthalate (PEN), polyether sulfone (PES), polycarbonate, polyestercarbonate, polyetherimide (PEI), polyarylate (PAR), polymers with trade name ARTON (available from the Japanese Synthetic Rubber Co., Tokyo, Japan), polymers with trade name AVATREL (available from the B.F.
• thermoset polymers such as polyimide, polyimide benzoxazole, polybenzoaxozole and cellulose derivatives.
• Biaxially oriented polypropylene (BOPP) film Polyethylene terephthalate (PET) with a thickness of approximately 0.002 inch (0.05 mm) is considered a convenient choice, as is biaxially oriented polypropylene (BOPP) film.
• Biaxially oriented polypropylene (BOPP) is commercially available from several suppliers including: ExxonMobil Chemical Company of Houston, Tex.; Continental Polymers of Swindon, UK; Kaisers International Corporation of Taipei City, Taiwan and PT Indopoly Swakarsa Industry (ISI) of Jakarta, Indonesia.
• Other examples of suitable film material are taught in WO 02/11978, titled "Cloth-like Polymeric Films," (Jackson et al).
• the substrate may be a lamination of two or more polymeric layers.
• volatilizable acrylate and methacrylate (referred to herein as "(meth)acrylate") monomers are useful, with volatilizable acrylate monomers being preferred.
• a suitable (meth)acrylate monomer has sufficient vapor pressure to be evaporated in an evaporator and condensed into a liquid or solid coating in a vapor coater.
• Suitable monomers include, but are not limited to, hexadiol diacrylate; ethoxyethyl acrylate; cyanoethyl (mono)acrylate; isobornyl (meth)acrylate; octadecyl acrylate; isodecyl acrylate; lauryl acrylate; beta-carboxyethyl acrylate; tetrahydrofurfuryl acrylate; dinitrile acrylate; pentafluorophenyl acrylate; nitrophenyl acrylate; 2- phenoxyethyl (meth)acrylate; 2,2,2-trifluoromethyl (meth)acrylate; diethylene glycol diacrylate; triethylene glycol di(meth)acrylate; tripropylene glycol diacrylate; tetraethylene glycol diacrylate; neo-pentyl glycol diacrylate; propoxylated neopentyl glycol diacrylate; polyethylene glyco
• tricyclodecane dimethanol diacrylate is considered suitable. It is conveniently applied by, e.g., condensed organic coating followed by UV initiated free radical vinyl polymerization. A thickness between about 250 and 1500 nm is considered convenient, with approximately 750 nm in thickness being considered particularly suitable.
• the low emissivity metallic materials useful, for example, in at least one low thermal conductivity metallic inorganic material 46 and/or 48 include aluminum, but is preferably silver, gold, copper, tin, chrome, nickel, platinum, tungsten, zinc, magnesium, molybdenum, rhodium, and/or alloys or combinations of the same.
• the metal is deposited at sufficient thickness to provide very low emissivity, preferably less than 0.6, or even less than 0.1.
• a copper-tin alloy CusoSmo by weight, commercially available as a sputtering target from DHF of Los Angeles, CA, is considered convenient, having a an emissivity " ⁇ " of 0.07 and a thermal conductivity "k” of 0.26 W/(m » °K). Silicon aluminum is also useful.
• the low emissivity metallic inorganic material may be accompanied by an additional interlay er of low thermal conductivity metallic material, which may or may not also have low emissivity.
• the low thermal conductivity non-metallic inorganic material 44 may conveniently be formed of metal oxides, metal nitrides, metal oxy-nitrides, and metal alloys of oxides, nitrides and oxy-nitrides.
• the low thermal conductivity non-metallic inorganic material 44 comprises a metal oxide.
• Preferred metal oxides include aluminum oxide, silicon oxide, silicon aluminum oxide, aluminum-silicon-nitride, and aluminum- silicon-oxy-nitride, CuO, Ti0 2 , ITO, S13N4, TiN, ZnO, aluminum zinc oxide, Zr0 2 , and yttria-stabilized zirconia.
• the use of Ca 2 Si04 is contemplated due to its flame retardant properties.
• the low thermal conductivity non-metallic inorganic material 44 may be prepared by a variety of methods, such as those described in U.S. Pat. No. 5,725,909 (Shaw et al.) and U.S. Pat. No. 5,440,446 (Shaw et al), the disclosures of which are incorporated by reference.
• Low thermal conductivity non-metallic inorganic material can typically be prepared by reactive evaporation, reactive sputtering, chemical vapor deposition, plasma enhanced chemical vapor deposition, and atomic layer deposition. Preferred methods include vacuum preparations such as reactive sputtering and plasma enhanced chemical vapor deposition.
• the low thermal conductivity non-metallic inorganic material 44 is conveniently applied as a thin layer.
• Silicon aluminum oxide is considered particularly convenient because it provides good barrier properties, as well as good interfacial adhesion to the optional second polymeric layer 50.
• Such layers are conveniently applied by sputtering, and a thickness between about 5 and 100 nm is considered convenient, with approximately 20 nm in thickness being considered particularly suitable.
• vacuum insulated panel 100 includes a core 104, conveniently in the form of a rigid foam having small open cells, for example on the order of four microns in size.
• a core 104 conveniently in the form of a rigid foam having small open cells, for example on the order of four microns in size.
• One source for the microporous foam core is Dow Chemical Company of Midland, MI.
• parallel spaced evacuation passages or grooves are cut or formed in the face of the core.
• Information on how the core may be vacuum sealed within the envelope is disclosed in US Patent 6,106,449 (Wynne), herein incorporated by reference.
• Other useful materials include fumed silica, glass fiber, and aerogels.
• An optional heat seal layer may also be present.
• Polyethylene, or a blend of linear low-density polyethylene and low-density polyethylene, are considered suitable.
• a heat seal layer may be applied to the barrier film by extrusion, coating, or lamination.
• a co- extruded composite layer comprising a high-density polyethylene is also considered suitable.
• the envelope may have fire retardant properties.
• the substrate may itself comprise a flame retardant material, or a separate flame retardant layer may be positioned in direct contact with an opposing major surface of the substrate opposite the first layer.
• Information on fire retardant materials suitable for use in layered products is found in U.S. Patent Application 2012/0164442 (Ong et al.), which is herein incorporated by reference.
• the barrier film 20 as described above includes some layers, especially low thermal conductivity inorganic stack 40, and most especially low thermal conductivity non- metallic inorganic material 44, which can be somewhat brittle.
• the barrier film 20 will lose some of its good (low) thermal conductivity properties if the vacuum seal it provides is broken.
• the barrier film is submitted to high strain and stress, especially during the vacuum suction step. Considering the film as a beam undergoing bending, it has a neutral plane where compressive stress across the thickness of the beam becomes zero and changes over to tensile stress.
• barrier film can be said to meet this criterion if the centerline with respect to the thickness of the layer of low thermal conductivity non-metallic inorganic material 44 is positioned within ⁇ 10% of the total thickness of all the layers (including optional layers) comprising the barrier film 20 from the calculated neutral plane of the barrier film 20.
• the centerline with respect to the thickness of the layer of low thermal conductivity non-metallic inorganic material 44 is positioned within ⁇ 5% of the total thickness of all the layers (including optional layers) comprising the barrier film 20 from the calculated neutral plane of the barrier film 20.
• Embodiment A An article comprising a vacuum insulation panel envelope comprising:
• Embodiment B The article of embodiment A wherein the low thermal conductivity inorganic stack comprises low thermal conductivity non-metallic inorganic materials.
• Embodiment C The article of embodiments A-B wherein the low thermal conductivity inorganic stack comprises low thermal conductivity metallic materials.
• Embodiment D The article of embodiments A-C wherein the low thermal conductivity inorganic stack comprises low thermal conductivity metallic materials and low emissivity metallic materials.
• Embodiment E The article of embodiments C or D wherein the low thermal conductivity metallic comprises a metal alloy having low emissivity.
• Embodiment F The article of any of the preceding embodiments further comprising an additional low conductivity organic layer.
• Embodiment G The article of any of the preceding embodiments further comprising a heat seal layer.
• Embodiment H The article of any of the preceding embodiments wherein the substrate comprises a flame retardant material.
• Embodiment I The article of any of the preceding embodiments further comprising a flame retardant layer in direct contact with an opposing major surface of the substrate opposite the first layer.
• Embodiment J The article of any of the preceding embodiments wherein the vacuum insulation panel envelope further comprises a core layer.
• Embodiment K The article of any of the preceding embodiments wherein the vacuum insulation panel envelope further comprises a core layer.
• the article of any of embodiments B and F to J wherein the low thermal conductivity non-metallic inorganic materials are selected from at least one of aluminum oxide, silicon oxide, aluminum-silicon-oxide, aluminum-silicon-nitride, and aluminum-silicon-oxy-nitride, CuO, T1O2, ITO, S13N4, TiN, ZnO, aluminum zinc oxide, Zr0 2 , yttria-stabilized zirconia and Ca 2 Si04.
• Embodiment L The article of any embodiments C-J wherein the low thermal conductivity metallic materials are selected from at least one of Ti, Sr, V, Mn, Ni, Cr, Sn, and Co.
• Embodiment M The article of any of embodiments D-J wherein the low emissivity metallic materials are selected from at least one of aluminum, silver, gold, copper, tin, chrome, nickel, platinum, tungsten, zinc, magnesium, molybdenum, rhodium, silicon and/or alloys or combinations of the same.
• Embodiment N The article of any of the embodiments E-M wherein the metal alloy is selected from at least one of aluminum/silicon, copper/tin.
• Embodiment O The article of any of the preceding embodiments wherein the vacuum insulation panel envelope has an oxygen transmission rate of less than 0.1 cc/m 2 /day and a moisture vapor transmission rate of less than 0.1 g/m 2 /day.
• a barrier film comprising:
• first layer in direct contact with one of the opposing major surfaces of the substrate, wherein the first layer is a low thermal conductivity organic layer or a low thermal conductivity inorganic stack;
• second layer in direct contact with the first layer, wherein the second layer is a low thermal conductivity organic layer or a low thermal conductivity inorganic stack, and wherein the second layer is not the same as that selected in the first layer,
• the low thermal conductivity inorganic stack comprises at least one low thermal conductivity non-metallic inorganic material and at least one low thermal conductivity metallic material.
• Embodiment Q The film of embodiment P wherein the low thermal conductivity metallic material comprises a low emissivity metallic material.
• Embodiment R The film of embodiment Q wherein the low thermal conductivity metallic material comprises a metal alloy material having low emissivity.
• Embodiment S The film of any of embodiments P-R further comprising a heat seal layer.
• Embodiment T The film of any of embodiments P-S wherein the substrate comprises a flame retardant material.
• Embodiment U The film of any of embodiments P-T further comprising a flame retardant layer in direct contact with an opposing major surface of the substrate opposite the first layer.
• Embodiment V The article of any of embodiments P-U wherein the low thermal conductivity non-metallic inorganic materials are selected from at least one of aluminum oxide, silicon oxide, aluminum-silicon-oxide, aluminum-silicon-nitride, and aluminum- silicon-oxy-nitride, CuO, Ti0 2 , ITO, S13N4, TiN, ZnO, aluminum zinc oxide, Zr0 2 , yttria- stabilized zirconia and Ca 2 Si04.
• Embodiment W The article of any embodiments P-V wherein the low thermal conductivity metallic materials are selected from at least one of Ti, Sr, V, Mn, Ni, Cr, Sn, and Co.
• Embodiment X Embodiment X.
• the article of any of embodiments Q-W wherein the low emissivity metallic materials are selected from at least one of aluminum, silver, gold, copper, tin, chrome, nickel, platinum, tungsten, zinc, magnesium, molybdenum, rhodium, silicon and/or alloys or combinations of the same.
• Embodiment Y The article of any of the embodiments R-X wherein the metal alloy is selected from at least one of aluminum/silicon, and copper/tin.
• Embodiment Z The article of any of embodiments A-0 wherein the low thermal conductivity inorganic stack is at or near the neutral plane of the article.
• Embodiment AA The barrier film of any of embodiments P-Y wherein the low thermal conductivity inorganic stack is at or near the neutral plane of the barrier film.
• the sample size (200 by 280 mm) is attached to the flex tester mandrels.
• the flexing action consists of a twisting motion combined with a horizontal motion (compression), thus repeatedly twisting and crushing the film.
• the test set up gives a twisting motion of 440° in the first 90 mm of the stroke and is followed by a straight horizontal motion of 65 mm.
• the speed is 45 cycles per minute.
• barrier films were made on a vacuum coater similar to the coater described in U.S. Pat. Nos. 5,440,446 (Shaw et al.) and 7,018,713 (Padiyath, et al).
• This coater was threaded up with a substrate in the form of an indefinite length roll of 0.05 mm thick, 14 inch (35.6 cm) wide PET film commercially available from DuPont-Teijin Films of Chester, VA.
• This substrate was then advanced at a constant line speed of 16 fpm (4.9 m/min).
• the substrate was prepared for coating by subjecting it to a nitrogen plasma treatment to improve the adhesion of the low thermal conductivity organic layer.
• a low thermal conductivity organic layer was formed on the substrate by applying tricyclodecane dimethanol diacrylate, commercially available as SARTOMER SR833S from Sartomer USA of Exton, PA, by ultrasonic atomization and flash evaporation to make a coating width of 12.5 inches (31.8 cm).
• This monomeric coating was subsequently cured immediately downstream with an electron beam curing gun operating at 7.0 kV and 4.0 mA.
• the flow of liquid into the evaporator was 1.33 ml/min, the gas flow rate was 60 seem and the evaporator temperature was set at 260°C.
• the process drum temperature was -10°C.
• the low thermal conductivity inorganic stack was applied, starting with the low thermal conductivity metallic inorganic material. More specifically, a conventional AC sputtering process operated at 4 kW of power was employed to deposit a 15 nm thick layer of copper onto the now polymerized low thermal conductivity organic layer (the book value of the thermal conductivity of copper is 3.9 W/(m » °K) and the emissivity ⁇ is 0.03). Then a low thermal conductivity non-metallic inorganic material was laid down by an AC reactive sputter deposition process employing a 40 kHz AC power supply.
• the cathode had a Si(90%)/Al(10%) target obtained from Soleras Advanced Coatings US, of Biddeford, (ME).
• the voltage for the cathode during sputtering was controlled by a feed-back control loop that monitored the voltage and controlled the oxygen flow such that the voltage would remain high and not crash the target voltage.
• the system was operated at 16 kW of power to deposit a 20 nm thick layer of silicon aluminum oxide onto the copper layer.
• a further in-line process was used to deposit a second polymeric layer on top of the silicon aluminum oxide layer.
• This polymeric layer was produced from monomer solution by atomization and evaporation.
• the material applied to form this top layer was a mixture of 3 wt% (N-(n-butyl)-3-aminopropyltrimethoxysilane commercially available as DYNASILAN 1189 from Evonik of Essen, DE; 1 wt% 1-hydroxy-cyclohexyl-phenyl- ketone commercially available as IRGACURE 184 from BASF of Ludwigshafen, DE; with the remainder SARTOMER SR833S.
• the flow rate of this mixture into the atomizer was 1.33 ml/min, the gas flow rate was 60 seem, and the evaporator temperature was 260°C.
• the coated mixture was cured to a finished polymer with an UV light.
• a barrier film was prepared according to the procedure of Example 1, except that the substrate was a 0.05 mm thick biaxially oriented polypropylene. It was tested for water vapor transmission according to the test method discussed above, and the water vapor transmission rate was found to be below the detection limit for the apparatus.
• a barrier film was prepared on the apparatus of Example 1. This coater was threaded up with a substrate in the form of an indefinite length roll of 0.0014 inch (0.036 mm) thick PET film commercially available from 3M Company of St. Paul, MN. This substrate was then advanced at a constant line speed of 16 fpm (4.9 m/min). The substrate was prepared for coating by subjecting it to a plasma treatment to improve the adhesion of the low thermal conductivity organic layer.
• a low thermal conductivity organic layer was formed on the substrate by applying tricyclodecane dimethanol diacrylate, commercially available as SARTOMER SR833S from Sartomer USA of Exton, PA, by ultrasonic atomization and flash evaporation to make a coating width of 12.5 inches (31.8 cm).
• This monomeric coating was subsequently cured immediately downstream with an electron beam curing gun operating at 7.0 kV and 4.0 mA.
• the flow of liquid into the evaporator was 1.33 ml/min, the gas flow rate was 60 seem and the evaporator temperature was set at 260°C.
• the process drum temperature was -10°C.
• the low thermal conductivity inorganic stack was applied, starting with the low thermal conductivity metallic inorganic material. More specifically, a conventional AC sputtering process operated at 4 kW of power was employed to deposit a 15 nm thick layer of copper onto the now polymerized low thermal conductivity organic layer. Then a low thermal conductivity non-metallic inorganic material was laid down by an AC reactive sputter deposition cathode employing a 40 kHz AC power supply. The cathode had a Si(90%)/Al(10%) target obtained from Soleras Advanced Coatings US.
• the voltage for the cathode during sputtering was controlled by a feed-back control loop that monitored the voltage and controlled the oxygen flow such that the voltage would remain high and not crash the target voltage.
• the system was operated at 16 kW of power to deposit a 20 nm thick layer of silicon aluminum oxide onto the copper layer.
• the resulted article was found to possess low-e and low-k functionalities. It was tested for water vapor transmission according to the test method discussed above. The water vapor transmission rate in this experiment was found to be below the detection limit for the apparatus.
• a barrier film was prepared generally according to the procedure of Example 3, except for the following particulars.
• the flow rate of monomer into the evaporator was 1.33 ml/min, and the silicon aluminum layer was 5 kW.
• a barrier film was prepared generally according to the procedure of Example 3, except for the following particulars.
• the flow rate of monomer into the evaporator was 1.33 ml/min, and the power used to deposit the oxide was 4kW.
• a further in-line process was used to deposit a second polymeric layer on top of the silicon aluminum oxide layer. This polymeric layer was produced from monomer solution by atomization and evaporation.
• the material applied to form this top layer was a mixture of 3 wt% (N-(n-butyl)-3- aminopropyltrimethoxysilane commercially available as DYNASILAN 1189 from Evonik of Essen, DE; 1 wt% 1-hydroxy-cyclohexyl-phenyl-ketone commercially available as IRGACURE 184 from BASF of Ludwigshafen, DE; with the remainder SARTOMER SR833S.
• the flow rate of this mixture into the atomizer was 1.33 ml/min, the gas flow rate was 60 seem, and the evaporator temperature was 260°C.
• a barrier film was prepared generally according to the procedure of Example 3, except for the following particulars.
• a second layer of silicon-aluminum oxide was laid down by an AC reactive sputter deposition cathode.
• the cathode had a Si(90%)/Al(10%) target obtained from Soleras Advanced Coatings US.
• the system was operated at 16 kW of power to deposit an approximately 25 nm thick layer of silicon aluminum oxide onto the second polymer layer.
• barrier films were prepared generally according to the procedures of Examples 3-6 respectively, except that the substrate for these Examples was a low density polyethylene/PET lamination, 0.00092 inch (0.023 mm) thick.
• the polyethylene portion of this lamination is commercially available from Berry Plastics of Evansville, IN.
• the PET side of the lamination faced the low thermal conductivity organic layer.
• a barrier film was prepared on the apparatus of Example 1.
• the substrate was PET film, 0.00092 inch (0.023 mm) thick, commercially available as LUMIRROR F7S from Toray of Tokyo, Japan. This substrate was then advanced at a constant line speed of 16 fpm (4.9 m/min).
• the substrate was prepared for coating by subjecting it to a plasma treatment to improve the adhesion of the low thermal conductivity organic layer.
• a low thermal conductivity organic layer was formed on the substrate by applying tricyclodecane dimethanol diacrylate, commercially available as SARTOMER SR833S from Sartomer USA of Exton, PA, by ultrasonic atomization and flash evaporation to make a coating width of 12.5 inches (31.8 cm).
• This monomeric coating was subsequently cured immediately downstream with an electron beam curing gun operating at 7.0 kV and 4.0 mA.
• the flow of liquid into the evaporator was 1.33 ml/min, the gas flow rate was 60 seem and the evaporator temperature was set at 260°C.
• the process drum temperature was -10°C.
• the low thermal conductivity inorganic stack was applied, starting with the low thermal conductivity metallic inorganic material. More specifically, a conventional AC sputtering process operated at 4 kW of power was employed to deposit a 20 nm thick layer of silicon aluminum alloy onto the now polymerized low thermal conductivity organic layer. The 90%Si/10%Al sputter target employed was obtained from obtained from DHF of Los Angeles, CA. Then a low thermal conductivity non-metallic inorganic material was laid down by an AC reactive sputter deposition cathode employing a 40 kHz AC power supply.
• the cathode had a Si(90%)/Al(10%) target obtained from Soleras Advanced Coatings US, of Biddeford, (ME).
• the voltage for the cathode during sputtering was controlled by a feed-back control loop that monitored the voltage and controlled the oxygen flow such that the voltage would remain high and not crash the target voltage.
• the system was operated at 16 kW of power to deposit a 25 nm thick layer of silicon aluminum oxide onto the copper layer.
• a further in-line process was used to deposit a second polymeric layer on top of the silicon aluminum oxide layer.
• This polymeric layer was produced from monomer solution by atomization and evaporation.
• the material applied to form this top layer was a mixture of 3 wt% (N-(n-butyl)-3-aminopropyltrimethoxysilane commercially available as DYNASILAN 1189 from Evonik of Essen, DE; 1 wt% 1-hydroxy-cyclohexyl-phenyl- ketone commercially available as IRGACURE 184 from BASF of Ludwigshafen, DE; with the remainder SARTOMER SR833S.
• the flow rate of this mixture into the atomizer was 1.33 ml/min, the gas flow rate was 60 seem, and the evaporator temperature was 260°C.
• the coated mixture was cured to a finished polymer with an UV light.
• the resulted article was found to possess low-k functionalities. It was tested for water vapor transmission according to the test method discussed above. The water vapor transmission rate in this experiment was found to be below the detection limit for the apparatus.
• a barrier film was prepared generally according to the procedures of Example 11, except that the line speed was doubled to 32 feet/min (9.8 m/min), and the monomer flow to produce the low thermal conductivity organic layer and the second polymer layer was also doubled. This caused the thickness of low thermal conductivity organic layer and the second polymer layer to remain at roughly 750 nm, while the thickness of the silicon aluminum layer was diminished to 10 nm and the thickness of the silicon aluminum oxide layer was diminished to 12 nm.
• Example 13 A barrier film was prepared generally according to the procedure of Example 11, except for the following particulars. Above the second polymeric layer, a second layer of silicon-aluminum oxide was laid down by an AC reactive sputter deposition cathode. The cathode had a Si(90%)/Al(10%) target obtained from Soleras Advanced Coatings US. The system was operated at 16 kW of power to deposit a 25 nm thick layer of silicon aluminum oxide onto the second polymeric layer.
• a barrier film was prepared generally according to the procedure of Example 3, except for the following particulars. Instead of using copper for the low thermal conductivity metallic inorganic material, a conventional AC sputtering process operated at 4 kW of power was employed to deposit a 20 nm thick layer of titanium onto the low thermal conductivity organic layer.
• Example 15
• a barrier film was prepared generally according to the procedure of Example 3, except for the following particulars. Instead of using copper for the low thermal conductivity metallic inorganic material, a conventional AC sputtering process operated at 4 kW of power was employed to deposit a 20 nm thick layer of copper-tin alloy, CusoSmo by weight, onto the low thermal conductivity organic layer.
• a barrier film was prepared generally according to the procedure of Example 15, except for the following particulars. Between the steps of depositing the layer of copper- tin alloy and the step of depositing the layer of silicon-aluminum oxide, an interlayer of titanium, 20 nm thick was deposited by a conventional AC sputtering process operated at 4 kW of power.
• a barrier film was prepared on a vacuum coater similar to the coater described in
• a low thermal conductivity organic layer was formed on the substrate by applying tricyclodecane dimethanol diacrylate, commercially available as SARTOMER SR833S from Sartomer USA of Exton, PA, by ultrasonic atomization and flash evaporation to make a coating width of 12.5 inches (31.8 cm).
• This monomeric coating was subsequently cured immediately downstream with an electron beam curing gun operating at 7.0 kV and 4.0 mA.
• the flow of liquid into the evaporator was 1.33 ml/min, the gas flow rate was 60 seem and the evaporator temperature was set at 260°C.
• the process drum temperature was -10°C.
• the low thermal conductivity inorganic stack was applied, starting with the low thermal conductivity metallic inorganic material. More specifically, a conventional AC sputtering process operated at 4 kW of power was employed to deposit a 10 nm thick layer of silicon aluminum alloy onto the now polymerized low thermal conductivity organic layer. The 90%Si/10%Al sputter target employed was obtained from obtained from DHF of Los Angeles, CA. Then a low thermal conductivity non-metallic inorganic material was laid down by an AC reactive sputter deposition process employing a 40 kHz AC power supply. The cathode had a
• Si(90%)/Al(10%) target obtained from Soleras Advanced Coatings US, of Biddeford, ME.
• the voltage for the cathode during sputtering was controlled by a feed-back control loop that monitored the voltage and controlled the oxygen flow such that the voltage would remain high and not crash the target voltage.
• the system was operated at 16 kW of power to deposit a 20 nm thick layer of silicon aluminum oxide onto the silicon aluminum alloy layer.
• a further in-line process was used to deposit a second polymeric layer on top of the silicon aluminum oxide layer.
• This polymeric layer was produced from monomer solution by atomization and evaporation.
• the material applied to form this top layer was a mixture of 3 wt% (N-(n-butyl)-3-aminopropyltrimethoxysilane commercially available as DYNASILAN 1189 from Evonik of Essen, DE; 1 wt% 1-hydroxy-cyclohexyl-phenyl- ketone commercially available as IRGACURE 184 from BASF of Ludwigshafen, DE; with the remainder SARTOMER SR833S.
• the flow rate of this mixture into the atomizer was 1.33 ml/min, the gas flow rate was 60 seem, and the evaporator temperature was 260°C.
• the coated mixture was cured to a finished polymer with an UV light.
• the second polymeric layer was then coated with a two-component laminating adhesive system that combines an isocyanate-terminated polyester urethane with a coreactant, commercially available as ADCOAT 577 from Dow Chemical of Midland, MI.
• a coating weight of 0.5 grains per 4" x 6" rectangle (2.1 g/m 2 ) was employed.
• a heat seal layer was then laminated to the laminating adhesive, specifically a film of High Density Polyethylene (HDPE) having a thickness of 1.8 mil (0.045 mm) and a tensile modulus of 135,000 psi (931 MPa), commercially available from Printpack, Inc. of Atlanta, GA.
• HDPE High Density Polyethylene
• the use of this material as the heat seal layer was calculated to place the low thermal conductivity non-metallic inorganic material at or near the neutral plane of the total film.
• a barrier film and a VIP were prepared according to the procedure of Example 17, except that the heat seal layer was a Low Density Polyethylene (LDPE) having a thickness of 3.2 mil (0.081 mm) and a tensile modulus of 30,000 psi (207 MPa), commercially available from Printpack, Inc. The use of this material as the heat seal layer was calculated to place the low thermal conductivity non-metallic inorganic material at or near the neutral plane of the total film.
• This barrier film was also used for the heat-sealing process in the manufacture process of VIPs. Further a single film of this construction was subjected to a flex resistance test, and the WVTR was tested before and after. After being submitted to 20 cycles of twisting/crushing motion according to ASTM F392, the film showed a WVTR of 0.7 g/m 2 /day.
• LDPE Low Density Polyethylene
• a barrier film and a VIP were prepared according to the procedure of Example 17, except that the heat seal layer was a Linear Low Density Polyethylene (LLDPE) having a thickness of 3.2 mil (0.081 mm) and a tensile modulus of 27,000 psi (186 MPa), commercially available from Printpack, Inc.
• LLDPE Linear Low Density Polyethylene
• the use of this material as the heat seal layer was calculated to place the low thermal conductivity non-metallic inorganic material at or near the neutral plane of the total film.

Landscapes

• Engineering & Computer Science (AREA)
• Chemical & Material Sciences (AREA)
• Architecture (AREA)
• Physics & Mathematics (AREA)
• Mechanical Engineering (AREA)
• Structural Engineering (AREA)
• Civil Engineering (AREA)
• Electromagnetism (AREA)
• General Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Organic Chemistry (AREA)
• Metallurgy (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Acoustics & Sound (AREA)
• Thermal Sciences (AREA)
• Plasma & Fusion (AREA)
• Laminated Bodies (AREA)
• Thermal Insulation (AREA)

Priority Applications (5)

Applications Claiming Priority (4)

Publications (1)

Family

ID=52282969

Family Applications (1)

Country Status (6)

Cited By (4)

Families Citing this family (7)

Citations (14)

Family Cites Families (12)

• 2014
  • 2014-12-16 US US15/105,735 patent/US20160326741A1/en not_active Abandoned
  • 2014-12-16 KR KR1020167019378A patent/KR102345944B1/ko not_active Expired - Fee Related
  • 2014-12-16 CN CN201480068692.1A patent/CN105829622B/zh not_active Expired - Fee Related
  • 2014-12-16 EP EP14824296.9A patent/EP3084092B1/en active Active
  • 2014-12-16 WO PCT/US2014/070475 patent/WO2015095114A1/en not_active Ceased
  • 2014-12-16 JP JP2016539313A patent/JP6656154B2/ja not_active Expired - Fee Related

Patent Citations (15)

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events