WO2015087847A1 - ペルヒドロポリシラザン、およびそれを含む組成物、ならびにそれを用いたシリカ質膜の形成方法 - Google Patents
ペルヒドロポリシラザン、およびそれを含む組成物、ならびにそれを用いたシリカ質膜の形成方法 Download PDFInfo
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- WO2015087847A1 WO2015087847A1 PCT/JP2014/082468 JP2014082468W WO2015087847A1 WO 2015087847 A1 WO2015087847 A1 WO 2015087847A1 JP 2014082468 W JP2014082468 W JP 2014082468W WO 2015087847 A1 WO2015087847 A1 WO 2015087847A1
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- perhydropolysilazane
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- VVNJURCLGNFMEE-UHFFFAOYSA-N CN[SiH3-]C Chemical compound CN[SiH3-]C VVNJURCLGNFMEE-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/087—Compounds containing nitrogen and non-metals and optionally metals containing one or more hydrogen atoms
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/62—Nitrogen atoms
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Definitions
- the present invention relates to a perhydropolysilazane capable of forming a siliceous film with few defects in the manufacturing process of a semiconductor element or the like, and a composition containing the perhydropolysilazane.
- the present invention also relates to a method for forming a siliceous film using them.
- interlayer insulating films are formed between transistor elements and bit lines, between bit lines and capacitors, between capacitors and metal wires, between metal wires, etc. Have been made. Further, an insulating material may be embedded in an isolation groove provided on the substrate surface or the like. Furthermore, after a semiconductor element is formed on the substrate surface, a coating layer may be formed using a sealing material to form a package. Such an interlayer insulating film and coating layer are often formed of a siliceous material.
- a method for forming a siliceous film a chemical vapor deposition method (CVD method), a sol-gel method, a method of applying and baking a composition containing a silicon-containing polymer, and the like are used.
- CVD method chemical vapor deposition method
- sol-gel method a method of applying and baking a composition containing a silicon-containing polymer
- a method for forming a siliceous film using a composition is often employed because it is relatively simple.
- a composition containing a silicon-containing polymer such as polysilazane, polysiloxane, polysiloxazan, or polysilane is applied to the surface of a substrate and baked, and then included in the polymer. Silicon is oxidized to form a siliceous film.
- a method for reducing defects in the siliceous film to be formed has been studied.
- Patent Document 1 a method for reducing defects in a siliceous film by reducing a polymer component having an excessive molecular weight
- Patent Document 2 hydrogenated polysilazane
- Patent Document 3 a polysilazane having a specific elemental composition and a filler containing polysiloxazan (Patent Document 3) for filling a gap in a semiconductor element, and a film-forming composition using polysilazane having a specific structure (Patent Document) 4 and 5) have been studied, however, the compositions described in these documents are not intended to reduce defects in the siliceous film or silicon nitride film to be formed. Is not allowed.
- a silicon-containing polymer or a composition containing the same that can suppress or prevent the occurrence of defects and form a siliceous film with few defects is desired. It was rare.
- the perhydropolysilazane according to the present invention is a perhydropolysilazane having a weight average molecular weight of 5,000 or more and 17,000 or less, and 1 H-NMR of a 17% by weight solution obtained by dissolving the perhydropolysilazane in xylol was measured.
- the ratio of the amounts of SiH 1 and 2 based on the amount of aromatic ring hydrogen of xylol, is 0.235 or less, and the ratio of the amount of NH is 0.055 or less.
- the curable composition according to the present invention is characterized by comprising the perhydropolysilazane and a solvent.
- the method for forming a siliceous film according to the present invention is characterized by comprising applying the curing composition onto a substrate and heating.
- the perhydropolysilazane according to the present invention is highly stable against oxidation, and a siliceous film with few defects can be formed by using a composition containing this perhydropolysilazane. Furthermore, the obtained siliceous film has the characteristics that shrinkage at the time of curing is small, the wet etching rate is small, and cracks are hardly generated. For this reason, the manufacturing efficiency of an electronic device can be improved by forming an electronic device using the composition.
- the perhydropolysilazane (hereinafter referred to as PHPS) according to the present invention is a silicon-containing polymer containing a Si—N bond as a repeating unit and consisting only of Si, N, and H. In this PHPS, except for the Si—N bond, all elements bonded to Si and N are H, and other elements such as carbon and oxygen are not substantially contained.
- the simplest structure of perhydropolysilazane is a chain structure having the following repeating unit (I).
- PHPS having a chain structure and a cyclic structure in the molecule may be used.
- Such PHPS has a branched structure or a cyclic structure in the molecule, and an example of a specific partial structure of such PHPS is represented by the following general formula.
- it may have a structure represented by the following formula, that is, a structure in which a plurality of Si—N molecular chains are crosslinked.
- the PHPS according to the present invention is not limited as long as it is a silicon-containing polymer containing a Si—N bond as a repeating unit and composed only of Si, N, and H, and includes various other structures exemplified above. I can take it. For example, you may have the structure which combined the above-mentioned linear structure, cyclic structure, and bridge
- the PHPS in the present invention preferably has a cyclic structure or a crosslinked structure, particularly a crosslinked structure.
- the PHPS according to the present invention needs to have a specific molecular weight.
- the composition containing PHPS according to the present invention is heated to convert it to siliceous, the low molecular components that are scattered (evaporated) are reduced, the volume shrinkage caused by the scattering of the low molecular components, and hence the inside of the fine groove
- the weight average molecular weight of PHPS is large.
- the weight average molecular weight of PHPS according to the present invention is required to be 5,000 or more, and preferably 5,700 or more.
- PHPS is dissolved in a solvent to form a composition, it is necessary to increase the applicability of the composition.
- the viscosity of the composition becomes excessively high, and the uneven portion is formed. It is necessary to control the curing rate of the composition in order to ensure the permeability of the composition.
- the weight average molecular weight of PHPS according to the present invention needs to be 17,000 or less, and preferably 15,000 or less.
- the weight average molecular weight is a polystyrene equivalent weight average molecular weight, and can be measured by gel permeation chromatography as a standard for polystyrene.
- the PHPS according to the present invention is characterized by a molecular structure, and has a feature that it has less —SiH 1,2 — and —NH— structures than the conventionally known PHPS. That is, there are relatively many branched structures or crosslinked structures in the PHPS molecule. Specifically, the repeating unit (Ia) constituting PHPS is relatively small and (Ib) to (If) are large.
- Such structural features can be detected by quantitative NMR. That is, PHPS according to the present invention exhibits a specific characteristic value when evaluated by quantitative NMR.
- Quantitative NMR quantitative NMR
- the analysis is performed by comparing the integrated value of the signal derived from the internal standard substance and the measurement target substance (internal standard method).
- PHPS using xylol (xylene) measured by 1 H-NMR as internal standard, in PHPS molecule (1) with reference to the aromatic ring hydrogenation of xylene, SiH 2 (in the formula ( Ia) and (Ib)) and SiH 1 (corresponding to (Ic) and (Id) in the above formula) relative value (hereinafter referred to as R (SiH 1,2 )), and (2) Relative value of the total amount of NH (corresponding to (Ia), (Ic) and (Ie) in the above formula) based on the aromatic ring hydrogen of xylol (hereinafter referred to as R (NH)) Is in a specific range. Note that (If) in the above formula is not detected by 1 H-NMR and can be ignored.
- a sample PHPS
- xylol a sample dissolved in xylol at a concentration of 17% by weight to prepare a polymer solution.
- 51 mg of the obtained polymer solution is dissolved in 1.0 g of a heavy solvent such as deuterated chloroform (manufactured by Kanto Chemical Co., Inc.) to obtain a sample solution.
- 1 H-NMR of the sample solution is measured 64 times using a JNM-ECS400 type nuclear magnetic resonance apparatus (trade name, manufactured by JEOL Ltd.) to obtain an NMR spectrum.
- FIG. 1 is an example of an NMR spectrum of PHPS according to the present invention obtained by this method.
- the amount of NH can be determined by subtracting the ethyl group of ethylbenzene determined from the above.
- the ratio (c) of the amount of hydrogen based on the amount of is as follows.
- the corrected spectral integral value (b) for ArH and NH was determined as follows.
- R (SiH 1,2 ) is at 0.235 or less is preferably 0.230 or less.
- R (SiH 1,2 ) is generally 0.187 or more and preferably 0.195 or more from the viewpoint of ease of manufacture of PHPS, particularly solubility of the synthesized polymer.
- R (NH) is 0.055 or less, and preferably 0.050 or less.
- R (NH) is generally 0.038 or more, and preferably 0.042 or more, from the viewpoint of ease of manufacture of PHPS, particularly solubility of the synthesized polymer.
- the ratio of the total amount of SiH 2 and SiH 1 based on the amount of SiH 3 or the amount of NH based on the total amount of hydrogen is small.
- qNMR measurement is basically performed using a solution having a PHPS concentration of 17% with respect to xylol.
- the 17% by weight solution of xylol cannot be adjusted due to the solubility of PHPS, or if it is advantageous to measure an existing solution, it is converted to a 17% by weight concentration based on the concentration of the solution to be measured. It is also possible to do.
- PHPS having such a specific structure is characterized in that it is hardly oxidized when it is applied as a composition on a substrate and comes into contact with the atmosphere. Further, when a siliceous film is formed using PHPS according to the present invention, the number of defects is suppressed. The reason for this is that, since the PHPS has a specific structure, the reactivity with water vapor is suppressed, so that, for example, oxidation from the atmosphere immediately after the application of PHPS can be suppressed, and the curing reaction is controlled at an appropriate rate. It is considered that the occurrence of defects is suppressed. [Method for producing perhydropolysilazane]
- PHPS according to the present invention can generally be synthesized by forming a low molecular weight inorganic polysilazane and further polycondensing the low molecular weight inorganic polysilazane in the presence of a basic compound.
- the PHPS according to the present invention can be produced by reacting at a relatively high temperature and for a relatively long time with respect to the conventional method.
- a low molecular weight inorganic polysilazane may be formed by reacting dichlorosilane with a basic compound such as pyridine to form an adduct and reacting the adduct with ammonia.
- the low molecular weight inorganic polysilazane which is an intermediate product, is heated in a basic solvent or a solvent containing a basic compound and subjected to a polycondensation reaction, whereby the PHPS according to the present invention can be formed.
- a basic compound a compound containing a basic element such as nitrogen or phosphorus, for example, a tertiary amine, a secondary amine having a sterically hindered group, or phosphine can be used. .
- the reaction solvent used in the present invention is a solvent obtained by adding such a basic compound to a non-basic solvent or a solvent composed of the basic compound itself.
- the addition amount of the basic compound is conventionally at least 5 parts by weight with respect to 100 parts by weight of the non-basic solvent (Patent Document 1).
- Patent Document 1 the cross-linking reaction between —SiH 1,2 — and —NH— in the inorganic silazane skeleton is promoted, and the condensation reaction or decomposition reaction between —SiH 3 and —NH— is suppressed.
- the ratio of the basic compound to 100 parts by weight of the non-basic solvent is preferably at least 100 parts or more, and more preferably 185 parts or more. If the amount of the basic compound is less than this, -SiH 1, 2 - sometimes a polycondensation reaction of -NH- is not smoothly promoted.
- Any basic compound or basic solvent may be used as long as it does not decompose inorganic polysilazane.
- examples of such compounds include trialkylamines such as trimethylamine, dimethylethylamine, diethylmethylamine and triethylamine, and tertiary amines such as pyridine, picoline, dimethylaniline, pyrazine, pyrimidine, pyridazine and derivatives thereof.
- non-basic solvent examples include aliphatic hydrocarbons, alicyclic hydrocarbons, aromatic hydrocarbon hydrocarbon solvents, halogenated hydrocarbons such as halogenated methane, halogenated ethane, and halogenated benzene; Ethers such as aromatic ethers and alicyclic ethers can be used.
- Preferred solvents are halogenated hydrocarbons such as methylene chloride, chloroform, carbon tetrachloride, bromoform, ethylene chloride, ethylidene chloride, trichloroethane, tetrachloroethane, ethyl ether, isopropyl ether, ethyl butyl ether, butyl ether, 1,2-dioxyethane, dioxane.
- halogenated hydrocarbons such as methylene chloride, chloroform, carbon tetrachloride, bromoform, ethylene chloride, ethylidene chloride, trichloroethane, tetrachloroethane, ethyl ether, isopropyl ether, ethyl butyl ether, butyl ether, 1,2-dioxyethane, dioxane.
- Ethers such as dimethyldioxane, tetrahydrofuran, tetrahydropyran, pentane, hexane, isohexane, methylpentane, heptane, isoheptane, octane, isooctane, cyclopentane, methylcyclopentane, cyclohexane, methylcyclohexane, benzene, toluene, xylene, ethylbenzene, etc. Hydrocarbons and the like.
- the polycondensation reaction of the present invention is carried out in a solvent as described above.
- the concentration of the inorganic polysilazane in the solvent is generally 0.1% by weight to 50% by weight, preferably 1% by weight to 12% by weight. is there. If the concentration of the inorganic polysilazane is lower than this, the intermolecular polycondensation reaction does not proceed sufficiently, and if it is higher than that, the intermolecular polycondensation reaction proceeds excessively to form a gel.
- the reaction temperature is generally 40 ° C. to 200 ° C., preferably 80 ° C.
- the polycondensation reaction does not proceed sufficiently at lower temperatures, and only the crosslinking reaction intended by the present invention at higher temperatures.
- the decomposition reaction of the inorganic polysilazane occurs at the same time, the structure control becomes difficult, and the polycondensation reaction proceeds too much to generate a gel.
- air can be used as the reaction atmosphere, a hydrogen atmosphere, an inert gas atmosphere such as dry nitrogen or dry argon, or a mixed atmosphere thereof is preferably used.
- pressure is applied during the reaction due to hydrogen as a by-product, but pressurization is not necessarily required, and normal pressure can be employed.
- the reaction time varies depending on various conditions such as the type and concentration of inorganic polysilazane and the type and concentration of the basic compound or basic solvent, and the polycondensation reaction temperature, but is generally in the range of 0.5 to 40 hours. Is enough.
- the optimum conditions for the polycondensation reaction to form PHPS according to the present invention depend on the average molecular weight and molecular weight distribution of the inorganic polysilazane, but the lower the average molecular weight of the inorganic polysilazane, the higher the reaction temperature or the longer the reaction time is. It is said. That is, when the reaction temperature is increased or the reaction time is increased, the molecular weight of PHPS formed is generally increased. On the other hand, as described above, when the molecular weight of PHPS becomes too large, the applicability of the composition and the solubility in a synthetic solvent tend to decrease. Such reaction conditions also cause an increase in manufacturing costs.
- the upper limit of the molecular weight of PHPS currently in general use is 3,000 to 3,500. For this reason, increasing the reaction temperature, increasing the reaction time, and obtaining a large molecular weight PHPS is feared because the applicability of the composition containing the PHPS and the solubility in a synthetic solvent are inferior. Was avoided.
- the inorganic polysilazane is polymerized to have a high molecular weight.
- the molecular chains of the polysilazane are cross-linked with each other.
- the —SiH3 group present at the end of the molecular chain is not so much for the cross-linking reaction.
- —SiH 1,2 — and —NH— in the middle of the molecular chain react with each other, so that the PHPS according to the present invention is formed with relatively little SiH1,2 and NH.
- a solvent solution containing a high molecular weight PHPS is obtained.
- the solution composition is adjusted so that the basic compound or the basic solvent content is 30 wt% in the total solvent. % Or less, preferably 5% by weight or less. Since the basic compound or basic solvent acts as an intermolecular polycondensation reaction catalyst for PHPS, if the ratio of the basic compound or basic solvent to the total solvent is too large, a gel may be formed during storage at room temperature for a long time. Because there is.
- This solution composition is adjusted by, for example, heating the PHPS solution obtained by the above polycondensation reaction, distilling off the basic compound or solvent contained therein, and then adding a non-basic (non-reactive) solvent. Can be done.
- a non-basic solvent that can be used for improving the stability of the solution in the present invention include aliphatic hydrocarbons, alicyclic hydrocarbons, aromatic hydrocarbons, halogenated hydrocarbons, aliphatics as described above. Ether, alicyclic ether, and the like can be used.
- the curable composition according to the present invention contains the aforementioned PHPS and a solvent.
- Solvents used to prepare this composition liquid include (a) aromatic compounds such as benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, triethylbenzene, etc.
- unsaturated hydrocarbons such as cyclohexene, etc.
- ethers such as dipropyl ether, dibutyl ether, anisole, etc.
- esters such as acetic acid n -Butyl, acetic acid i- Chill acetate n- amyl acetate i- amyl,
- ketones such as methyl isobutyl ketone (MIBK) and the like, but are exemplified, but not limited to. Further, by using a plurality of types of solvents, the solubility of PHPS and the evaporation rate of the solvent can be adjusted.
- the amount of the solvent to be added to the composition is such that the workability is improved by the applied coating method, and the PHPS used is taken into consideration the permeability of the solution into the fine groove and the film thickness required outside the groove. Can be appropriately selected according to the weight average molecular weight, distribution and structure thereof.
- the curable composition according to the invention generally comprises 0.1 to 70% by weight, preferably 1 to 30% by weight of PHPS, based on the total weight of the composition.
- the method for forming a siliceous film according to the present invention comprises applying the curing composition to a substrate and heating.
- the shape of the substrate is not particularly limited and can be arbitrarily selected according to the purpose.
- the curable composition according to the present invention has a feature that it can easily penetrate into narrow grooves and the like and can form a uniform siliceous film even inside the grooves, so that the substrate having grooves and holes with a high aspect ratio. It is preferable to apply to. Specifically, it is preferably applied to a substrate having at least one groove having a deepest portion width of 0.2 ⁇ m or less and an aspect ratio of 2 or more.
- the shape of the groove is not particularly limited, and the cross section may be any shape such as a rectangle, a forward taper shape, a reverse taper shape, a curved surface shape, and the like. Further, both end portions of the groove may be open or closed.
- a representative example of a base material having at least one groove having a high aspect ratio is a substrate for an electronic device including a transistor element, a bit line, a capacitor, and the like.
- an insulating film called a PMD between a transistor element and a bit line, between a transistor element and a capacitor, between a bit line and a capacitor, or between a capacitor and a metal wiring
- a process of forming an insulating film between a plurality of metal wirings called IMD or embedding an isolation groove is followed by a through-hole plating process for forming a hole penetrating vertically through the embedding material of the fine groove.
- the present invention is suitable for any other application that requires embedding with a homogeneous siliceous material inside and outside the groove of a base material having a high aspect ratio.
- Examples of such applications include undercoat of liquid crystal glass (passivation film such as Na), overcoat of liquid crystal color filter (insulation flattening film), gas barrier of film liquid crystal, hard coating of base material (metal, glass), heat resistance -Oxidation resistant coating, antifouling coating, water repellent coating, hydrophilic coating, glass, UV cut coating of plastic, and colored coating.
- curable composition there are no particular restrictions on the method of applying the curable composition to such a substrate, and examples include ordinary coating methods such as spin coating, dipping, spraying, transfer, and slit coating.
- a drying process is performed under the treatment conditions of 10 seconds to 30 minutes at a temperature of 50 to 400 ° C. in the air, in an inert gas or oxygen gas for the purpose of drying or precuring the coating film. Do.
- the solvent is removed by drying, and the fine groove is substantially filled with PHPS.
- the PHPS contained inside and outside the groove is heated to be converted into a siliceous material. It is preferable to heat in an atmosphere containing water vapor when heating.
- the atmosphere containing water vapor means an atmosphere having a water vapor partial pressure in the range of 0.5 to 101 kPa, preferably 1 to 90 kPa, more preferably 1.5 to 80 kPa. Heating can be performed in a temperature range of 300 to 1200 ° C.
- the silica conversion process is divided into two or more stages, first heated at a relatively low temperature in an atmosphere containing water vapor, for example, in a temperature range of 300 to 600 ° C., and then at a higher temperature in an atmosphere containing no water vapor. Thus, it can be heated in a temperature range of 500 to 1200 ° C.
- Arbitrary gas can be used as components (henceforth dilution gas) other than water vapor
- oxygen is preferably used in terms of the film quality of the siliceous material to be obtained.
- the dilution gas is appropriately selected in consideration of the influence on other elements such as an electronic device exposed to the heat treatment.
- a reduced pressure or vacuum atmosphere of less than 1.0 kPa can be employed in addition to an atmosphere containing any of the above-described dilution gases.
- the curable composition according to the present invention is applied to a predetermined substrate, dried, and then heated in an atmosphere having a temperature in the range of 300 to 600 ° C. and a water vapor partial pressure in the range of 0.5 to 101 kPa. Heating in an atmosphere having a partial pressure of oxygen of 400 to 1200 ° C. and a partial pressure of oxygen of 0.5 to 101 kPa; (2) After the curing composition according to the present invention is applied to a predetermined substrate and dried, the composition is heated in an atmosphere having a temperature in the range of 300 to 600 ° C. and a water vapor partial pressure in the range of 0.5 to 101 kPa.
- the curable composition according to the present invention is treated with a predetermined group. After applying to the material and drying, it is heated in an atmosphere where the temperature is in the range of 300 to 600 ° C. and the partial pressure of water vapor is in the range of 0.5 to 101 kPa, and then the temperature is in the range of 400 to 1200 ° C. Heat in a vacuum or vacuum.
- the rate of temperature rise and the rate of temperature fall to the target temperature during heating can generally be in the range of 1 ° C to 100 ° C / min. Further, there is no particular limitation on the heating and holding time after reaching the target temperature, and it can be generally in the range of 1 minute to 10 hours.
- the siliceous film according to the present invention is obtained by the hydrolysis reaction of PHPS, it mainly contains Si—O bonds, but also contains some Si—N bonds depending on the degree of conversion. That is, the fact that the siliceous material contains Si—N bonds indicates that the material is derived from polysilazane.
- the siliceous film according to the present invention contains nitrogen in an atomic percentage range of 0.005 to 5%. Indeed, it is difficult to reduce this nitrogen content below 0.005%. The atomic percentage of nitrogen can be measured by atomic absorption spectrometry.
- siloxane polymer solution coating methods or methods using polysilazane containing organic groups
- large volume shrinkage occurs when converted to siliceous materials.
- the siliceous material inside the groove tends to be heterogeneous with respect to the density, and the film density is lowered.
- the siliceous film according to the present invention has little volume shrinkage when converted to a siliceous material, the siliceous material becomes more homogeneous inside and outside the groove, and is formed by silica conversion by stabilizing the oxidation reactivity.
- the film density of the coating can be improved.
- the finer the groove the greater the influence of restraint by the groove wall surface.
- the density tends to be low. Since the siliceous film according to the present invention hardly undergoes volume shrinkage when converted to a siliceous material, the density becomes uniform even if the groove width is different.
- the thickness of the siliceous film formed on the surface of the substrate and the thickness of the coating film formed on the surface outside the groove are not particularly limited. It can be set to an arbitrary thickness within a range in which cracks do not occur in the film upon conversion to. As described above, according to the method of the present invention, even when the film thickness is 0.5 ⁇ m or more, cracks are unlikely to occur in the film. For example, a contact hole having a width of 1000 nm and a groove having a depth of 2.0 ⁇ m are substantially defective. Can be embedded without any problem.
- Example 1 After replacing the inside of a 10 L reaction vessel equipped with a cooling condenser, a mechanical stirrer, and a temperature control device with dry nitrogen, 4680 g of dry pyridine, 151 g of dry xylol and 1673 g of intermediate (A) obtained in Comparative Example 1 1673 g was added and stirred to be uniform while bubbling with nitrogen gas at 0.5 NL / min. Subsequently, the reforming reaction was performed at 110 ° C. for 9.6 hours, and PHPS of Example 1 was obtained.
- Example 2 For Example 1, synthesis was performed by changing the reforming reaction time to 10.4 hours, and PHPS having a different structure was synthesized. Each characteristic value of the obtained PHPS was as shown in Table 2.
- Example 3 For Example 1, the modification reaction time was changed to 9.0 hours, and synthesis was performed to synthesize PHPS having a different structure. Each characteristic value of the obtained PHPS was as shown in Table 2.
- Example 4 The inside of a 10 L reaction vessel equipped with a cooling condenser, a mechanical stirrer, and a temperature controller was replaced with dry nitrogen, and then the dry pyridine 5697 g, dry xylol 428 g and 41.3% obtained in the same manner as in Comparative Example 1, Mw 1388 1790 g of the intermediate (A) was added and stirred uniformly while bubbling with a nitrogen gas of 0.5 NL / min. Subsequently, the reforming reaction was performed at 130 ° C. for 8.2 hours, and PHPS of Example 4 was obtained.
- Comparative Example 1 The inorganic polysilazane xylol solution obtained in Synthesis Example 1 was used as Comparative Example 1.
- Example 2 For Example 1, synthesis was performed at 100 ° C. with the modification reaction time changed to 11.4 hours, and PHPS having a different structure was synthesized. Each characteristic value of the obtained PHPS was as shown in Table 2.
- the obtained slurry product was subjected to pressure filtration using a 0.2 ⁇ m filter made of Teflon (registered trademark) under a dry nitrogen atmosphere to obtain 6,000 ml of a filtrate.
- Teflon registered trademark
- an inorganic polysilazane xylol solution having a concentration of 39.8% was obtained.
- the weight average molecular weight of the obtained inorganic polysilazane was measured by GPC (developing solution: CHCl 3 ), and was 12368 in terms of polystyrene.
- Each characteristic value of the obtained PHPS was as shown in Table 2.
- Example 4 For Example 1, the modification reaction time was changed to 7.0 hours at 130 ° C., and synthesis was performed to synthesize PHPS having a different structure. Each characteristic value of the obtained PHPS was as shown in Table 2.
- Example 5 For Example 1, synthesis was performed at 140 ° C. with the reforming reaction time changed to 6.0 hours, and PHPS having a different structure was synthesized. Each characteristic value of the obtained PHPS was as shown in Table 2.
- Example 6 For Example 1, synthesis was performed at 150 ° C. with the reforming reaction time changed to 5.1 hours, and PHPS having a different structure was synthesized. Each characteristic value of the obtained PHPS was as shown in Table 2.
- the wafer sample after baking was divided for 30 seconds in an aqueous solution containing 5% by weight ammonium fluoride and 0.5% by weight hydrofluoric acid after dividing the trench pattern portion perpendicular to the trench direction. After washing with water and drying, SEM observation was performed. 200 trenches were observed, and the number of trenches in which voids were confirmed was defined as the number of voids.
- the obtained silicon wafer with a siliceous film and a silicon wafer with a thermal oxide film as a reference were immersed in an aqueous solution containing 0.5% by weight of hydrofluoric acid at 20 ° C., and then thoroughly washed with pure water. And dried.
- the cross section of this silicon wafer is observed with an electron microscope, and the etching rate of the sample is calculated by linear approximation from the relationship between the etching time and the film thickness reduction amount for the part without the trench (blanket part) and the inside of the trench, The ratio of the etching rate of the sample film to the thermal oxide film was calculated, and the etching rate was calculated.
- the obtained results show that the coating film formed using PHPS according to the present invention has few defects and voids, and the wet etching rate is low.
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Abstract
Description
本発明によるペルヒドロポリシラザン(以下、PHPSという)は、Si-N結合を繰り返し単位として含み、かつSi、N、およびHのみからなるケイ素含有ポリマーである。このPHPSは、Si-N結合を除き、Si,Nに結合する元素がすべてHであり、その他の元素、たとえば炭素や酸素を実質的に含まないものである。ペルヒドロポリシラザンの最も単純な構造は、下記の繰り返し単位(I)を有する鎖状構造である。
(2)キシロールの芳香族環水素を基準とした、NH(上記式の(Ia)、(Ic)および(Ie)に対応)の合計量の相対値(以下、R(NH)という)
が特定の範囲にあることを特徴の一つとしている。なお、上記式の(If)は、1H-NMRによって検出されないものなので無視できる。
まず、試料(PHPS)をキシロールに17重量%の濃度で溶解させてポリマー溶液を調製する。次いで、得られたポリマー溶液51mgを重溶媒、たとえば重クロロホルム(関東化学株式会社製)1.0gに溶解させて試料溶液を得る。 試料溶液の1H-NMRをJNM-ECS400型核磁気共鳴装置(商品名、日本電子株式会社製)を用いて、64回測定してNMRスペクトルを得る。図1はこの方法により得られた、本発明によるPHPSのNMRスペクトルの一例である。このNMRスペクトルには、PHPSのSiH1およびSiH2に帰属されるピーク(δ=4.8ppm付近)、SiH3に帰属されるピーク(δ=4.4ppm付近)、NHに帰属されるピーク(δ=1.5ppm付近)、キシロールの芳香環水素に帰属されるピーク(δ=7.2ppm付近)が認められる。また、内標準資料に用いたキシロールに含まれる不純物であるエチルベンゼンのエチル基の水素に帰属されるピーク(δ=2.7ppm)も認められる。このエチルベンゼンのエチル基の水素に帰属されるピークはδ=1.3ppm付近にも現れ、このピークはNHに帰属されるδ=1.5ppm付近のピークと重なるが、δ=2.7ppmのピークから求められるエチルベンゼンのエチル基が定量されるので、それを差し引いてNH量を定量できる。同様にエチルベンゼンのフェニル基の水素に帰属されるピークはδ=7.2ppm付近に現れ、このピークはキシロールの芳香環水素に帰属されるδ=7.2ppm付近のピークと重なるが、δ=2.7ppmのピークから求められるエチルベンゼンのフェニル基が定量されるので、それを差し引いてキシロール芳香環水素を定量できる。
ArH: ArHのスペクトル積分値(a)-CH2(エチルベンゼン)のスペクトル積分値(a)×(5/2) =22.55-1.22×(5/2)=19.5
NH: [NH+CH3(エチルベンゼン)]のスペクトル積分値(a)-CH2(エチルベンゼン)のスペクトル積分値(a)×(3/2) =2.64-1.22×(3/2)=0.81
[ペルヒドロポリシラザンの製造方法]
まず、原料としてジクロロシランをジクロロメタンまたはベンゼンなどの溶媒中でアンモニアと反応させて低分子量の無機ポリシラザンを形成させる。または、ジクロロシランにピリジンなどの塩基性化合物を反応させてアダクトを形成させ、そのアダクトにアンモニアを反応させることによって低分子量無機ポリシラザンを形成させてもよい。
本発明による硬化用組成物は、前記のPHPSと溶媒とを含むものである。この組成物液を調製するために用いられる溶媒としては、(a)芳香族化合物、たとえばベンゼン、トルエン、キシレン、エチルベンゼン、ジエチルベンゼン、トリメチルベンゼン、トリエチルベンゼン等、(b)飽和炭化水素化合物、たとえばシクロヘキサン、デカヒドロナフタレン、ジペンテン、n-ペンタン、i-ペンタン、n-ヘキサン、i-ヘキサン、n-ヘプタン、i-ヘプタン、n-オクタン、i-オクタン、n-ノナン、i-ノナン、n-デカン、エチルシクロヘキサン、メチルシクロヘキサン、シクロヘキサン、p-メンタン等、(c)不飽和炭化水素、たとえばシクロヘキセン等、(d)エーテル、たとえばジプロピルエーテル、ジブチルエーテル、アニソール等、(e)エステル、たとえば酢酸n-ブチル、酢酸i-ブチル、酢酸n-アミル、酢酸i-アミル等、(f)ケトン、たとえばメチルイソブチルケトン(MIBK)等、が挙げられるが、これらに限定はされない。また、複数種の溶媒を使用することにより、PHPSの溶解度や溶媒の蒸発速度を調節することもできる。
本発明によるシリカ質膜の形成方法は、前記の硬化用組成物を、基材に塗布し、加熱することを含んでなる。基材の形状は特に限定されず、目的に応じて任意に選択することができる。しかしながら、本発明による硬化用組成物は、狭い溝部などにも容易に浸透し、溝の内部においても均一なシリカ質膜を形成できるという特徴があるため、アスペクト比の高い溝部や孔を有する基板に適用することが好ましい。具体的には最深部の幅が0.2μm以下でそのアスペクト比が2以上である溝を少なくとも一つ有する基材などに適用することが好ましい。ここで溝の形状に特に限定はなく、断面が長方形、順テーパー形状、逆テーパー形状、曲面形状、等いずれの形状であってもよい。また、溝の両端部分は開放されていても閉じていてもよい。
(1)本発明による硬化用組成物を所定の基材に塗布、乾燥後、温度が300~600℃の範囲、水蒸気分圧が0.5~101kPaの範囲の雰囲気中で加熱し、引き続き温度が400~1200℃の範囲で、酸素分圧が0.5~101kPaの範囲の雰囲気中で加熱すること;
(2)本発明による硬化用組成物を所定の基材に塗布、乾燥後、温度が300~600℃の範囲、水蒸気分圧が0.5~101kPaの範囲の雰囲気中で加熱し、引き続き温度が400~1200℃の範囲で、窒素、ヘリウム及びアルゴンの中から選ばれる一種又は二種以上の不活性ガス雰囲気中で加熱すること、並びに
(3)本発明による硬化用組成物を所定の基材に塗布、乾燥後、温度が300~600℃の範囲、水蒸気分圧が0.5~101kPaの範囲の雰囲気中で加熱し、引き続き温度が400~1200℃の範囲で、1.0kPa未満の減圧または真空雰囲気中で加熱すること。
また、溝幅の異なる複数の溝の間では、シリカ質材料への転化時に体積収縮が発生する場合には、溝が微細になればなるほど溝壁面による拘束の影響が大きくなり、シリカ質材料の密度が低くなる傾向にある。本発明によるシリカ質膜は、シリカ質材料への転化時に体積収縮がほとんどないため、溝幅が異なっていても密度が均一となる。
[合成例1:中間体(A)の合成]
冷却コンデンサー、メカニカルスターラーと温度制御装置を備えた10L反応容器内部を乾燥窒素で置換した後、乾燥ピリジン7,500mlを反応容器に投入し、-3℃まで冷却した。次いでジクロロシラン500gを加えると各色固体状のアダクト(SiH2Cl2・2C5H5N))が生成した。反応混合物が-3℃以下になったことを確認し、撹拌しながらこれにゆっくりとアンモニア350gを吹き込んだ。引き続いて30分間撹拌し続けた後、乾燥窒素を液層に30分間吹き込み、過剰のアンモニアを除去した。得られたスラリー状の生成物を乾燥窒素雰囲気下でテフロン(登録商標)製0.2μmフィルターを用いて加圧濾過を行い、濾液6,000mlを得た。エバポレーターを用いてピリジンを留去したところ、濃度38.9%の無機ポリシラザンのキシロール溶液を得た。得られた無機ポリシラザンの重量平均分子量をGPC(展開液:CHCl3)により測定を行い、ポリスチレン換算で1401であった。この処方にて得られた無機ポリシラザンを以下、中間体(A)と呼ぶ。
冷却コンデンサー、メカニカルスターラーと温度制御装置を備えた10L反応容器内部を乾燥窒素で置換した後、乾燥ピリジン4680g、乾燥キシロール151gと比較例1で得られた38.9%の中間体(A)1673gを投入し、窒素ガス0.5NL/minでバブリングを行いながら、均一になるように撹拌した。引き続いて110℃で9.6時間改質反応を行い、実施例1のPHPSが得られた。
(1)重量平均分子量Mw、
(2)重量平均分子量Mw/数平均分子量Mn、
(3)キシロールの芳香族環水素を基準とした、SiH2およびSiH1との合計量の相対値(R(SiH1,2))、
(4)キシロールの芳香族環水素を基準とした、NHの量の相対値(R(NH))、
(5)キシロールの芳香族環水素を基準とした、SiH3の量の相対値(R(SiH3))、
(6)キシロールの芳香族環水素を基準とした、PHPSに含まれる全水素の合計量の相対値R(SiHtotal)、
(7)前記(4)と前記(6)から算出される、全水素の量に対するNHの量の比、および
(8)前記(3)と前記(5)から算出される、SiH3の量に対する、SiH2およびSiH1との合計量の比
は表2に示す通りであった。
実施例1に対して、改質反応時間を10.4時間に変更して合成を行い、構造の異なるPHPSを合成した。得られたPHPSの各特性値は表2に示す通りであった。
実施例1に対して、改質反応時間を9.0時間に変更して合成を行い、構造の異なるPHPSを合成した。得られたPHPSの各特性値は表2に示す通りであった。
冷却コンデンサー、メカニカルスターラーと温度制御装置を備えた10L反応容器内部を乾燥窒素で置換した後、乾燥ピリジン5697g、乾燥キシロール428gと比較例1と同様の方法で得られた41.3%、Mw1388の中間体(A)1790gを投入し、窒素ガス0.5NL/minでバブリングを行いながら、均一になるように撹拌した。引き続いて130℃で8.2時間改質反応を行い、実施例4のPHPSが得られた。
合成例1で得られた無機ポリシラザンのキシロール溶液を比較例1とした。
実施例1に対して、100℃で改質反応時間を11.4時間に変更して合成を行い、構造の異なるPHPSを合成した。得られたPHPSの各特性値は表2に示す通りであった。
冷却コンデンサー、メカニカルスターラーと温度制御装置を備えた10L反応容器内部を乾燥窒素で置換した後、乾燥キシロール7,000mlと乾燥ピリジン500mlを反応容器に投入し、-3℃まで冷却した。次いでジクロロシラン500gを加えると各色固体状のアダクト(SiH2Cl2・2C5H5N))が生成した。反応混合物を30℃になったことを確認し、撹拌しながらこれにゆっくりとアンモニア350gを吹き込んだ。
引き続いて30分間撹拌し続けた後、乾燥窒素を液層に30分間吹き込み、過剰のアンモニアを除去した。得られたスラリー状の生成物を乾燥窒素雰囲気下でテフロン(登録商標)製0.2μmフィルターを用いて加圧濾過を行い、濾液6,000mlを得た。エバポレーターを用いてピリジンを留去したところ、濃度39.8%の無機ポリシラザンのキシロール溶液を得た。得られた無機ポリシラザンの重量平均分子量をGPC(展開液:CHCl3)により測定を行い、ポリスチレン換算で12368であった。得られたPHPSの各特性値は表2に示す通りであった。
実施例1に対して、130℃で改質反応時間を7.0時間に変更して合成を行い、構造の異なるPHPSを合成した。得られたPHPSの各特性値は表2に示す通りであった。
実施例1に対して、140℃で改質反応時間を6.0時間に変更して合成を行い、構造の異なるPHPSを合成した。得られたPHPSの各特性値は表2に示す通りであった。
実施例1に対して、150℃で改質反応時間を5.1時間に変更して合成を行い、構造の異なるPHPSを合成した。得られたPHPSの各特性値は表2に示す通りであった。
各PHPSを塗布膜300nmになるように濃度調整を行い、塗布液を調製した。得られた塗布液をスピンコーター(ミカサ株式会社製スピンコーター1HDX2(商品名))を用いて、4インチウェハに回転数1000rpmでスピン塗布した。得られた塗布膜を湿度50.5%で22.5℃に15分間暴露させた。成膜直後と、暴露後とに、Pelletron 3SDH(商品名、National Electrostatics Corporation製)を用いて、ラザフォード後方散乱分光法にて元素分析を行った。得られた結果は表3に示す通りであった。
得られたシリカ質膜について、表面の欠陥、トレンチ内におけるボイド、収縮率、ウェットエッチングレートを評価した。評価方法はそれぞれ以下の通りである。
各PHPSを塗布膜で580nm程度になるように濃度調整を行い、塗布液を調製した。得られた塗布液を、スピンコーター(東京エレクトロン株式会社製ACT12 SOD(商品名))を用いて、12インチウェハに回転数1000rpmでスピン塗布し、150℃のホットプレート上で3分間プリベークを行った。プリベーク後の膜厚を、M-44型分光エリプソメーター(商品名、JA ウーラム社製)にて測定し、各サンプルが一定膜厚(580nm程度)であることを確認した。その後、ウェハ上膜の欠陥検査をLS9100(商品名、株式会社日立ハイテクノロジーズ製)、ならびにUVision4(商品名、アプライドマテリアルズ社製)にて行った。
スピンコーター(東京エレクトロン株式会社製Mark8(商品名))を用いて、PHPSを含む塗布液を1000rpmにて塗布した。このシリコンウェハは、縦断面が長方形であり、深さ500nm、幅50nmのトレンチを有するものであった。塗布済みのウェハを150℃にて3分間プリベークに付した。その後、焼成炉(光洋サーモシステム製VF1000LP)にて400℃の水蒸気雰囲気にて30分、引き続いて400℃の窒素雰囲気下で焼成を行った。焼成後のウェハーサンプルを、トレンチパターン部をトレンチ方向に対して垂直に割ってから、 5重量%のフッ化アンモニウムと0.5重量%のフッ化水素酸を含有する水溶液に30秒浸し、純水洗浄後に乾燥させてからSEM観察を行った。トレンチを200箇所観察し、そのうちのボイドが確認されるトレンチの数をボイド数とした。
各PHPSを塗布膜で580nm程度になるように濃度調整を行い、塗布液を調製した。
得られた塗布液をスピンコーター(東京エレクトロン株式会社製Mark8(商品名))を用いて、ベアシリコンウェハーに1000rpmにて塗布した。塗布済みのウェハを、150℃にて3分間プリベークに付し、得られた被膜の膜厚を、M-44型分光エリプソメーター(商品名、JA ウーラム社製)にて測定し、初期膜厚を得た。その後、焼成炉(光洋サーモシステム株式会社製VF1000LP(商品名))にて400℃の水蒸気雰囲気にて30分、引き続いて400℃の窒素雰囲気下で焼成を行った。焼成後の各サンプルの膜厚を分光エリプソメーター(JA ウーラム社製M-2000V(商品名))にて測定し、焼成後膜厚を得た。収縮率は、以下の式にて算出した。
(初期膜厚-焼成後膜厚)/初期膜厚×100=収縮率(%)
各PHPSを塗布膜で580nm程度になるように濃度調整を行い、塗布液を調製した。調製した塗布液を濾過精度0.02μmのPTFE製フィルターで濾過した。濾過後の塗布液をスピンコーター(東京エレクトロン株式会社製Mark8)を用いて、シリコンウェハー上に1000rpmにて塗布した。このウェハは、縦断面が長方形であり、深さ500nm、幅50nmのトレンチを有するものであった。塗布済みのウェハをまず150℃にて3分間プリベークに付した。その後、焼成炉(光洋サーモシステム製VF1000LP)にて400℃の水蒸気雰囲気にて30分、引き続いて400℃の窒素雰囲気下で焼成を行った。そして、化学機械研磨(CMP)にて溝の最表面まで研磨を行い、基盤上の余剰の膜を除去した。
Claims (9)
- 重量平均分子量が5,000以上17,000以下のペルヒドロポリシラザンであって、前記ペルヒドロポリシラザンをキシロールに溶解させた17重量%溶液の1H-NMRを測定した時、キシロールの芳香族環水素の量を基準とした、SiH1,2の量の比が0.235以下、NHの量の比が0.055以下であることを特徴とするペルヒドロポリシラザン。
- 重量平均分子量が、5,700以上15,000以下である、請求項1または2に記載のペルヒドロポリシラザン。
- 請求項1~4のいずれか1項に記載のペルヒドロポリシラザンと、溶媒とを含んでなることを特徴とする、硬化用組成物。
- 前記溶媒が、(a)芳香族化合物、(b)飽和炭化水素化合物、(c)不飽和炭化水素、(d)エーテル、(e)エステル、および(f)ケトンからなる群から選択される、請求項5に記載の硬化用組成物。
- 組成物の全重量を基準として、0.1~70質量%のペルヒドロポリシラザンを含んでなる、請求項5または6に記載の硬化用組成物。
- 請求項5~7のいずれか1項に記載の硬化用組成物を基材上に塗布し、加熱することを含んでなることを特徴とする、シリカ質膜の形成方法。
- 前記加熱を水蒸気雰囲気下で行う、請求項8に記載のシリカ質膜の形成方法。
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SG11201604172UA SG11201604172UA (en) | 2013-12-09 | 2014-12-08 | Perhydropolysilazane, composition containing same, and method for forming silica film using same |
CN201480066142.6A CN105793963B (zh) | 2013-12-09 | 2014-12-08 | 全氢聚硅氮烷、以及包含其的组合物、以及使用了其的二氧化硅质膜的形成方法 |
US15/039,440 US9793109B2 (en) | 2013-12-09 | 2014-12-08 | Perhydropolysilazane, composition containing same, and method for forming silica film using same |
EP14868948.2A EP3082153B1 (en) | 2013-12-09 | 2014-12-08 | Perhydropolysilazane, composition containing same, and method for forming silica film using same |
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SG11201604172UA (en) | 2016-07-28 |
KR101817927B1 (ko) | 2018-01-12 |
KR20160096671A (ko) | 2016-08-16 |
CN105793963A (zh) | 2016-07-20 |
EP3082153A1 (en) | 2016-10-19 |
EP3082153A4 (en) | 2017-06-14 |
TW201529644A (zh) | 2015-08-01 |
IL245736B (en) | 2019-03-31 |
US9793109B2 (en) | 2017-10-17 |
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CN105793963B (zh) | 2018-10-19 |
IL245736A0 (en) | 2016-07-31 |
JP2015115369A (ja) | 2015-06-22 |
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