WO2015086991A1 - Procédé de réalisation d'un film de copolymère a blocs sur un substrat. - Google Patents
Procédé de réalisation d'un film de copolymère a blocs sur un substrat. Download PDFInfo
- Publication number
- WO2015086991A1 WO2015086991A1 PCT/FR2014/053254 FR2014053254W WO2015086991A1 WO 2015086991 A1 WO2015086991 A1 WO 2015086991A1 FR 2014053254 W FR2014053254 W FR 2014053254W WO 2015086991 A1 WO2015086991 A1 WO 2015086991A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copolymer
- block copolymer
- block
- random
- copolymers
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D187/00—Coating compositions based on unspecified macromolecular compounds, obtained otherwise than by polymerisation reactions only involving unsaturated carbon-to-carbon bonds
- C09D187/005—Block or graft polymers not provided for in groups C09D101/00 - C09D185/04
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/26—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/02—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
- B01J31/06—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides containing polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
- C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2438/00—Living radical polymerisation
- C08F2438/02—Stable Free Radical Polymerisation [SFRP]; Nitroxide Mediated Polymerisation [NMP] for, e.g. using 2,2,6,6-tetramethylpiperidine-1-oxyl [TEMPO]
Definitions
- the method applies to the field of lithography in which the block copolymer films constitute lithography masks, the storage of information in which the block copolymer films can locate magnetic particles.
- the method is also applicable to the manufacture of porous membranes or catalyst supports for which one of the domains of the block copolymer is degraded to obtain a porous structure.
- the method advantageously applies to the field of nanolithography using block copolymer masks.
- Also known from WO 2010/1 15243 is a method for producing a polymer structure having a surface having a plurality of functionalized surface domains.
- the method comprises producing a composition comprising at least one surface polymer, at least one block copolymer and at least one common solvent in which the block copolymers are in the general formula ABC wherein A is a polymer of the same type as the polymer of the surface polymer and miscible with the surface polymer, B being a polymer immiscible with the polymer A and C is an end group which is a reactive molecule or an oligomer.
- PLA Another block of interest that can be advantageously associated with the PDMS is PLA.
- the grafting of a random copolymer brush requires thermal annealing of the high temperature statistical copolymer films. Indeed, thermal annealing can last up to 48 hours in a vacuum oven at a temperature above the glass transition temperature of the random copolymer. This step is expensive in energy and time.
- the Applicant has sought to obtain a process for producing a self-assembled block copolymer film on a substrate for neutralizing the interfacial energies between said block copolymer film and the substrate which is less expensive in time and cost. energy than the known methods.
- the proposed method advantageously makes it possible to control the orientation of the mesostructure formed by the self-assembly of the block copolymer and in particular for a mesostructure of rolls oriented perpendicularly to the substrate or lamellae oriented perpendicularly to the substrate.
- the use of random or gradient copolymers whose monomers are different from those present respectively in each block of the block copolymer in the deposited solution effectively solves the problem described above and in particular to control the orientation of the mesostructure formed by the self-assembly of a block copolymer by a random copolymer not chemically related to the block copolymer.
- the random or gradient copolymer is prepared by radical radical polymerization
- - The random or gradient copolymer is prepared by controlled radical polymerization
- Nitroxide is N-tert-butyl-1-diethylphosphono-2,2-dimethylpropyl nitroxide
- radical R 1 may be a radical comprising a phosphoryl group, said radical R 1 may be represented by the formula:
- R 3 and R 4 which may be the same or different, may be selected from alkyl, cycloalkyl, alkoxyl, aryloxyl, aryl, aralkyloxy, perfluoroalkyl, aralkyl, and may include from 1 to 20 carbon atoms.
- R3 and / or R 4 may also be a halogen atom such as a chlorine or bromine atom or fluorine or iodine.
- the radical R 1 may also comprise at least one aromatic ring, such as for the phenyl radical or the naphthyl radical, the latter may be substituted, for example by an alkyl radical comprising from 1 to 4 carbon atoms.
- N-tert-butyl-1-phenyl-2-methylpropyl nitroxide N-tert-butyl-1- (2-naphthyl) -2-methylpropyl nitroxide
- N-phenyl-1-diethyl phosphono-1-methyl ethyl nitroxide N- (1-phenyl-2-methylpropyl) -1-diethylphosphono-1-methyl ethyl nitroxide,
- the alkoxyamines used in controlled radical polymerization must allow good control of the sequence of monomers. Thus they do not all allow good control of certain monomers.
- the alkoxyamines derived from TEMPO only make it possible to control a limited number of monomers, the same goes for the alkoxyamines derived from 2,2,5-tri-methyl-4-phenyl-3-azahexane-3-nitroxide. (TIPNO).
- TIPNO 2,2,5-tri-methyl-4-phenyl-3-azahexane-3-nitroxide.
- other alkoxyamines derived from nitroxides corresponding to formula (1) particularly those derived from nitroxides corresponding to formula (2) and even more particularly those derived from N-tertiobutyl-1-diethylphosphono-2,2-dimethylpropyl. nitroxide allow to expand to a large number of monomer controlled radical polymerization of these monomers.
- alkoxyamines also influences the economic factor. The use of low temperatures will be preferred to minimize industrial difficulties.
- TIPNO 2,2,5-tri-methyl-4-phenyl-3-azahexane-3-nitroxide
- the constituent monomers random copolymers and block copolymers (the number of at least two) will be selected from vinyl, vinylidene, diene, olefinic, allylic or (meth) acrylic monomers.
- These monomers are chosen more particularly from vinylaromatic monomers such as styrene or substituted styrenes, especially alpha-methylstyrene, acrylic monomers such as acrylic acid or its salts, alkyl, cycloalkyl or aryl acrylates, such as methyl acrylate, ethylene, butyl, ethylhexyl or phenyl, hydroxyalkyl acrylates such as 2-hydroxyethyl acrylate, alkyl ether acrylates such as 2-methoxyethyl acrylate, alkoxy acrylates and the like.
- the constituent monomers of the random copolymers will preferably be chosen from styrene or (meth) acrylic monomers, and more particularly styrene and methyl methacrylate.
- the building blocks may be selected from the following blocks: PLA, PDMS, polytrimethyl carbonate (PTMC), polycaprolactone (PCL).
- PLA polytrimethyl carbonate
- PCL polycaprolactone
- block copolymers used in the invention will be chosen from the following:
- PLA-PDMS PLA-PDMS-PLA, PTMC-PDMS-PTMC, PCL-PDMS-PCL, PTMC-PCL, PTMC-PCL-PTMC, PCL-PTMC-PCL. And more particularly PLA-PDMS-PLA, PTMC-PDMS-PTMC.
- block copolymers in which one block contains either styrene or styrene and at least one X comonomer, the other block containing either methyl methacrylate, either methyl methacrylate and at least one comonomer Y, X being chosen from the following entities: hydrogenated or partially hydrogenated styrene, cyclohexadiene, cyclohexene, cyclohexane, styrene substituted with one or more fluorinated alkyl groups, or their mixtures in a mass proportion of X ranging from 1 to 99% and preferably from 10 to 80% with respect to the styrene-containing block; Y being selected from the following: fluorinated alkyl (meth) acrylate, especially trifluoroethyl methacrylate, dimethyl aminoethyl (meth) acrylate, globular (meth) acrylates such as
- Flory-Huggins parameter will have a strong phase separation of the blocks. Indeed, this parameter is relative to the interactions between the strings of each of the blocks.
- a high value of ⁇ means that the blocks move as far apart as possible, which will result in a good resolution of the blocks, and therefore a low line roughness.
- Flory-Huggins parameter that is to say greater than 0.1 to 298 K
- the substrates The process of the invention is applicable to the following substrates: silicon, silicon having a native or thermal oxide layer, hydrogenated or halogenated silicon, germanium, hydrogenated or halogenated germanium, platinum and oxides platinum, tungsten and tungsten oxides, gold, titanium nitrides, graphenes, resins used by those skilled in the art in optical lithography.
- the surface is mineral and more preferably silicon. Even more preferably, the surface is silicon having a native or thermal oxide layer.
- the process for producing a self-assembled block copolymer film on a substrate according to the invention comprises:
- the solution containing the mixture of block copolymer and random copolymers or gradients is subjected to a heat treatment allowing the segregation of the phases inherent in the self-assembly of block copolymers and the hierarchization of the block copolymer system / random copolymer, i.e. the migration of the random copolymer between the block copolymer layer and the substrate.
- the surfaces treated by the process of the invention are advantageously used in lithography, membrane preparation, porous or catalysis media applications for which one of domains formed during self-assembly of the block copolymer is degraded to obtain a porous structure.
- the reaction medium When the conversion of 70% is reached, the reaction medium is cooled to 60 ° C and the solvent and residual monomers are evaporated under vacuum. After evaporation, the methyl ethyl ketone is added to the reaction medium in an amount such that a polymer solution of the order of 25% by mass is produced.
- FIG. 1 which illustrates four AFM images obtained using the Atomic Force Microscopy (AFM) imaging technique.
- the AFM images (a) and (b) respectively correspond to a PLA-b-PDMS-b-PLA film deposited on a PS-s-PMMA brush, and a mixture of 75% by weight of PLA-b-PDMS- b-PLA and 25% by mass of PS-s-PMMA, without heat treatment.
- the images (c) and (d) correspond to (a) and (b) respectively after a heat treatment of 1 h 30 at 180 ° C.
- a random copolymer layer is formed between the PLA-b-PDMS-b-PLA block copolymer film and the substrate, neutralizing the interfacial energies.
- the PDMS and PLA domains no longer have preferential interactions with the substrate, and a PLA cylinder structure oriented perpendicular to the surface in a PDMS matrix is obtained during the annealing step.
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020167018793A KR20160098378A (ko) | 2013-12-13 | 2014-12-10 | 블록 공중합체 필름을 기판 상에 제조하는 방법 |
JP2016538579A JP6373998B2 (ja) | 2013-12-13 | 2014-12-10 | 基材上のブロックコポリマーフィルムを生産するための方法 |
SG11201604779XA SG11201604779XA (en) | 2013-12-13 | 2014-12-10 | Method for producing a block copolymer film on a substrate |
EP14827490.5A EP3080198A1 (fr) | 2013-12-13 | 2014-12-10 | Procédé de réalisation d'un film de copolymère a blocs sur un substrat. |
CN201480075435.0A CN106029759B (zh) | 2013-12-13 | 2014-12-10 | 用于在基底上制造嵌段共聚物膜的方法 |
US15/103,748 US20160319158A1 (en) | 2013-12-13 | 2014-12-10 | Process for producing a block copolymer film on a substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1362585 | 2013-12-13 | ||
FR1362585A FR3014876B1 (fr) | 2013-12-13 | 2013-12-13 | Procede de realisation d'un film de copolymere a blocs sur un substrat |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015086991A1 true WO2015086991A1 (fr) | 2015-06-18 |
Family
ID=50179786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2014/053254 WO2015086991A1 (fr) | 2013-12-13 | 2014-12-10 | Procédé de réalisation d'un film de copolymère a blocs sur un substrat. |
Country Status (9)
Country | Link |
---|---|
US (1) | US20160319158A1 (fr) |
EP (1) | EP3080198A1 (fr) |
JP (1) | JP6373998B2 (fr) |
KR (1) | KR20160098378A (fr) |
CN (1) | CN106029759B (fr) |
FR (1) | FR3014876B1 (fr) |
SG (1) | SG11201604779XA (fr) |
TW (1) | TWI557166B (fr) |
WO (1) | WO2015086991A1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012151482A2 (fr) | 2011-05-04 | 2012-11-08 | Cornell University | Films copolymères à multiples blocs, leurs procédés de fabrication et leurs utilisations |
SG10202010709UA (en) | 2016-04-28 | 2020-11-27 | Terapore Tech Inc | Charged isoporous materials for electrostatic separations |
CA3044467A1 (fr) | 2016-11-17 | 2018-05-24 | Jayraj K. SHETHJI | Films de copolymere sequence auto-assembles isoporeux contenant des additifs hydrophiles de poids moleculaire eleve et leurs procedes de fabrication |
EP3585506A4 (fr) | 2017-02-22 | 2021-01-13 | Terapore Technologies, Inc. | Membranes en copolymère multi-bloc liées à un ligand, utilisations et procédé de fabrication |
CN110621394A (zh) | 2017-05-12 | 2019-12-27 | 特拉波雷技术有限公司 | 耐化学性氟化多嵌段聚合物结构、制造方法和用途 |
WO2019023135A1 (fr) * | 2017-07-25 | 2019-01-31 | Terapore Technologies, Inc. | Matériaux poreux à partir d'architectures de copolymères séquencés complexes |
JP6989181B2 (ja) | 2017-11-07 | 2022-01-05 | エルジー・ケム・リミテッド | 高分子組成物 |
FR3075800B1 (fr) * | 2017-12-21 | 2020-10-09 | Arkema France | Couches anti adhesives pour les procedes d'impression par transfert |
CA3093316A1 (fr) | 2018-03-12 | 2019-09-19 | Terapore Technologies, Inc. | Materiaux copolymeres sequences asymetriques mesoporeux isoporeux ayant des macrovides et leur procede de fabrication |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010115243A1 (fr) | 2009-04-09 | 2010-10-14 | The University Of Queensland | Mélanges de copolymères à blocs |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7407554B2 (en) * | 2005-04-12 | 2008-08-05 | International Business Machines Corporation | Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent |
US9028859B2 (en) * | 2006-07-07 | 2015-05-12 | Advanced Cardiovascular Systems, Inc. | Phase-separated block copolymer coatings for implantable medical devices |
US7763319B2 (en) * | 2008-01-11 | 2010-07-27 | International Business Machines Corporation | Method of controlling orientation of domains in block copolymer films |
FR2974094A1 (fr) * | 2011-04-15 | 2012-10-19 | Arkema France | Procede de preparation de surfaces |
US8513356B1 (en) * | 2012-02-10 | 2013-08-20 | Dow Global Technologies Llc | Diblock copolymer blend composition |
JP6228932B2 (ja) * | 2012-02-10 | 2017-11-08 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | ナノリソグラフィのためのポリ乳酸/ケイ素含有ブロックコポリマー |
JP5934565B2 (ja) * | 2012-04-20 | 2016-06-15 | 東京応化工業株式会社 | パターンの縮小方法、及び組成物 |
-
2013
- 2013-12-13 FR FR1362585A patent/FR3014876B1/fr not_active Expired - Fee Related
-
2014
- 2014-12-10 CN CN201480075435.0A patent/CN106029759B/zh not_active Expired - Fee Related
- 2014-12-10 SG SG11201604779XA patent/SG11201604779XA/en unknown
- 2014-12-10 JP JP2016538579A patent/JP6373998B2/ja not_active Expired - Fee Related
- 2014-12-10 US US15/103,748 patent/US20160319158A1/en not_active Abandoned
- 2014-12-10 EP EP14827490.5A patent/EP3080198A1/fr not_active Withdrawn
- 2014-12-10 KR KR1020167018793A patent/KR20160098378A/ko not_active Application Discontinuation
- 2014-12-10 WO PCT/FR2014/053254 patent/WO2015086991A1/fr active Application Filing
- 2014-12-11 TW TW103143325A patent/TWI557166B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010115243A1 (fr) | 2009-04-09 | 2010-10-14 | The University Of Queensland | Mélanges de copolymères à blocs |
Non-Patent Citations (17)
Also Published As
Publication number | Publication date |
---|---|
KR20160098378A (ko) | 2016-08-18 |
EP3080198A1 (fr) | 2016-10-19 |
CN106029759B (zh) | 2019-08-16 |
JP6373998B2 (ja) | 2018-08-15 |
FR3014876B1 (fr) | 2017-03-31 |
CN106029759A (zh) | 2016-10-12 |
TW201538578A (zh) | 2015-10-16 |
US20160319158A1 (en) | 2016-11-03 |
SG11201604779XA (en) | 2016-07-28 |
FR3014876A1 (fr) | 2015-06-19 |
JP2017502123A (ja) | 2017-01-19 |
TWI557166B (zh) | 2016-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3080198A1 (fr) | Procédé de réalisation d'un film de copolymère a blocs sur un substrat. | |
EP2788442B1 (fr) | Procede de preparation de surfaces | |
WO2015087005A1 (fr) | Procédé permettant la création de structures nanométriques par l'auto-assemblage de copolymères a blocs | |
FR3008986A1 (fr) | Procede de controle de la periode caracterisant la morphologie obtenue a partir d'un melange de copolymere a blocs et de (co) polymeres de l'un des blocs | |
WO2015092241A1 (fr) | Procédé de nanostructuration d'un film de copolymère a blocs a partir d'un copolymère a blocs non structure a base de styrène et de methacrylate de méthyle, et film de copolymère a blocs nanostructure | |
TWI567127B (zh) | 控制建基於苯乙烯及甲基丙烯酸甲酯之奈米結構嵌段共聚物膜週期之方法、以及奈米結構嵌段共聚物膜 | |
EP3019915A1 (fr) | Procede d'orientation perpendiculaire de nanodomaines de copolymeres a blocs par l'utilisation de copolymeres statistiques ou a gradient dont les monomeres sont au moins en partie differents de ceux presents respectivement dans chacun des blocs du copolymere a blocs | |
EP2696993A2 (fr) | Procédé de préparation de surfaces | |
EP3080217B1 (fr) | Procédé permettant la création de structures nanométriques par l'auto-assemblage de copolymères a blocs | |
FR3010411A1 (fr) | Procede de controle de la periode d'un assemblage nano-structure comprenant un melange de copolymeres a blocs | |
WO2017068259A1 (fr) | Procede permettant la creation de structures nanometriques par l'auto-assemblage de copolymeres di-blocs | |
EP3105295B1 (fr) | Procede de controle de l'energie de surface d'un substrat |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14827490 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2016538579 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15103748 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
REEP | Request for entry into the european phase |
Ref document number: 2014827490 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2014827490 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 20167018793 Country of ref document: KR Kind code of ref document: A |