WO2015060082A1 - 熱電変換装置の製造方法 - Google Patents
熱電変換装置の製造方法 Download PDFInfo
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- WO2015060082A1 WO2015060082A1 PCT/JP2014/076254 JP2014076254W WO2015060082A1 WO 2015060082 A1 WO2015060082 A1 WO 2015060082A1 JP 2014076254 W JP2014076254 W JP 2014076254W WO 2015060082 A1 WO2015060082 A1 WO 2015060082A1
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- conductive paste
- back surface
- thermoelectric conversion
- insulating base
- disposed
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 28
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 229910002909 Bi-Te Inorganic materials 0.000 description 3
- 229910016339 Bi—Sb—Te Inorganic materials 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
Definitions
- the present invention relates to a method for manufacturing a thermoelectric conversion device in which a thermoelectric conversion element and a wiring pattern are connected.
- Patent Document 1 discloses a surface pattern in which a plurality of thermoelectric conversion elements are arranged between first and second substrates arranged to face each other, and the plurality of thermoelectric conversion elements are formed on a first substrate. And the thermoelectric conversion apparatus connected with the back surface pattern formed in the 2nd board
- thermoelectric conversion element has a cross-sectional area in a direction parallel to the surface direction of the first and second substrates, and the cross-sectional area of the end connected to the back surface pattern is connected to the surface pattern. It is made larger than the cross-sectional area of the made edge part and the intermediate part which connects each these edge part.
- thermoelectric conversion generated at the interface between the back surface pattern and the thermoelectric conversion element can be increased as compared with the case where the thermoelectric conversion element is constant in the cross-sectional area of the intermediate portion. Moreover, compared with the case where the thermoelectric conversion element is constant in the cross-sectional area of the end part on the back surface pattern side, it is possible to suppress the thermal resistance of the thermoelectric conversion element from being reduced, and the temperature difference between the first and second substrates. Can be reduced.
- thermoelectric conversion device is manufactured as follows. That is, first, a thermoelectric conductor block is arranged on the second substrate on which the back surface pattern is formed. Thereafter, the thermoelectric block is separated from the side opposite to the second substrate side with a dicing cutter or the like to form a plurality of thermoelectric conversion elements. At this time, a dicing cutter having a tapered shape in which the width of the blade edge portion continuously narrows from both sides toward the tip is used. Thereby, when the thermoelectric conductor block is cut, a thermoelectric conversion element in which the cross-sectional area of the end portion on the back surface pattern side is larger than the cross-sectional area of the end portion on the surface pattern side and the cross-sectional area of the intermediate portion can be formed. Thereafter, the thermoelectric conversion device is manufactured by arranging a first substrate having a surface pattern formed on the opposite side of the second substrate with each thermoelectric conversion element interposed therebetween.
- the cross-sectional area of the end connected to the front surface pattern also includes It is desired to make it larger than the area.
- thermoelectric conversion element is formed by separating the thermoelectric block from the side opposite to the second substrate side with a dicing cutter, the cross-sectional area of the end portion on the surface pattern side is reduced. It is difficult to make it larger than the cross-sectional area of the intermediate portion.
- the present invention provides a thermoelectric conversion element in which the cross-sectional area of the end portion connected to the front surface pattern and the end portion connected to the back surface pattern is larger than the cross-sectional area of the intermediate portion connecting these end portions. It is an object to provide a method for manufacturing a thermoelectric conversion device.
- a back surface protection member formed on the back surface opposite to the front surface of the insulating base material and formed with a back surface pattern that is electrically connected to a predetermined thermoelectric conversion device.
- the intermediate portion connecting the first and second ends.
- a step of preparing an insulating base material in which a plurality of via holes penetrating in the thickness direction are formed and an intermediate portion or a conductive paste constituting the intermediate portion is arranged in the via hole, and a surface protection member on which a surface pattern is formed A step of preparing a back surface protection member having a back surface pattern formed thereon, a surface protection member disposed on the surface of the insulating base material, and a back surface protection member disposed on the back surface of the insulating base material
- a step of integrating the laminate and in the step of forming the laminate, the intermediate portion or the conductive paste that constitutes the intermediate portion and the surface pattern, the first end or The conductive paste constituting the first end portion is disposed, and the second end portion or the second end portion is electrically conductive between the intermediate portion or the conductive paste constituting the intermediate portion and the back surface pattern.
- a step of preparing an insulating base material in which a plurality of via holes penetrating in the thickness direction are formed and an intermediate portion or a conductive paste constituting the intermediate portion is disposed in the via hole, and a surface protection member on which a surface pattern is formed A step of arranging a surface protection member on the surface side of the insulating base material to form an intermediate structure, a step of integrating the intermediate structure, and a back surface protection member on which a back surface pattern is formed
- thermoelectric conversion element having the first end portion and the intermediate portion is formed, and in the step of configuring the laminated body, between the intermediate portion and the back surface pattern, In the step of configuring the second end or the laminated body in which the conductive paste constituting the second end is arranged and integrating the laminated body, by pressing the laminated body from the laminating direction while heating, 1.
- a thermoelectric conversion element having a first end portion and an intermediate portion is formed.
- thermoelectric conversion device in the cross-sectional area in the direction parallel to the planar direction of the insulating base material, the thermoelectric conversion device having the thermoelectric conversion element in which the cross-sectional area of the first and second end portions is larger than the cross-sectional area of the intermediate portion. Can be manufactured.
- thermoelectric converter in a 1st embodiment of the present invention. It is sectional drawing which shows the manufacturing process of the thermoelectric conversion apparatus shown in FIG. 2 is a cross-sectional view showing the manufacturing process of the thermoelectric conversion device continued from FIG. It is sectional drawing which shows the manufacturing process of the thermoelectric conversion apparatus in 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the thermoelectric conversion apparatus in 3rd Embodiment of this invention.
- thermoelectric conversion device 1 of the present embodiment an insulating base material 10, a front surface protection member 20, and a back surface protection member 30 are integrated, and a dissimilar metal is formed inside the integrated material.
- the first interlayer connection member 40 and the second interlayer connection member 50 are configured to be alternately connected in series.
- the first interlayer connection member 40 and the second interlayer connection member 50 correspond to the thermoelectric conversion element of the present invention.
- the insulating base material 10 is composed of a planar rectangular thermoplastic resin film containing polyetheretherketone (PEEK) or polyetherimide (PEI).
- the insulating base material 10 includes a first interlayer connecting member 40 and a second interlayer connecting member that is a different metal from the first interlayer connecting member 40 so as to penetrate the insulating base material 10 in the thickness direction. 50 are arranged.
- the first interlayer connection member 40 and the second interlayer connection member 50 are arranged in a staggered pattern so as to be staggered.
- the Bi-Sb-Te alloy powder (metal particles) constituting the P type is formed by crystallizing a plurality of metal atoms before sintering. It is composed of a metal compound (sintered alloy) that is solid-phase sintered to maintain the structure.
- the second interlayer connecting member 50 is a metal obtained by solid-phase sintering so that an N-type Bi-Te alloy powder (metal particles) maintains a crystal structure of a plurality of metal atoms before sintering. It is composed of a compound (sintered alloy).
- a surface protection member 20 made of a flat rectangular thermoplastic resin film containing polyetheretherketone (PEEK) or polyetherimide (PEI) is disposed on the surface 10a of the insulating substrate 10.
- the surface protection member 20 has the same planar shape as the insulating base material 10, and a plurality of surface patterns 21 patterned with copper foil or the like are separated from each other on the side 20 a facing the insulating base material 10. It is formed so as to be connected to the first and second interlayer connection members 40 and 50.
- a back surface protection member 30 made of a planar rectangular thermoplastic resin film containing polyether ether ketone (PEEK) or polyether imide (PEI) is disposed on the back surface 10b of the insulating base material 10.
- the back surface protection member 30 has the same planar shape as the insulating base material 10, and a plurality of back surface patterns 31 patterned with copper foil or the like on the one surface 30 a side facing the insulating base material 10 are separated from each other. It is formed so as to be connected to the first and second interlayer connection members 40 and 50.
- the plurality of front surface patterns 21 and back surface patterns 31 are appropriately first, second and second interlayer connection members 40, 50 so that the first and second interlayer connection members 40, 50 are alternately connected in series via the front surface patterns 21 and the back surface patterns 31.
- the second interlayer connection members 40 and 50 are electrically connected.
- the first and second interlayer connecting members 40, 50 are first end portions 40a, 50a connected to the front surface pattern 21, second end portions 40b, 50b connected to the back surface pattern 31, and these first and second ends. Intermediate portions 40c and 50c for connecting the portions 40a, 40b, 50a and 50b are provided.
- the first and second interlayer connection members 40 and 50 have a cross-sectional area in the direction parallel to the planar direction of the insulating base material 10, and the cross-sectional areas of the first end portions 40 a and 50 a and the second end portions 40 b and 50 b are the same. It is made larger than the cross-sectional area of the intermediate parts 40c and 50c. That is, the first and second interlayer connection members 40 and 50 have a so-called I-shaped cross section in a cross section in a direction orthogonal to the planar direction of the insulating base material 10.
- the back surface protection member 30 is electrically connected to the back surface pattern 31 and the back surface protection member 30 is opposite to the insulating base material 10 side.
- a contact portion exposed from one surface is formed. This contact portion can be electrically connected to the outside.
- thermoelectric conversion device 1 in the present embodiment.
- the first and second interlayer connection members 40 and 50 have the first end portions 40 a and 50 a and the second end portions in a cross-sectional area in a direction parallel to the planar direction of the insulating base material 10.
- the cross-sectional areas of 40b and 50b are larger than the cross-sectional areas of the intermediate portions 40c and 50c. For this reason, compared with the case where the 1st, 2nd interlayer connection members 40 and 50 are made constant by the cross-sectional area of the intermediate parts 40c and 50c, the effect of thermoelectric conversion can be made high.
- first and second interlayer connection members 40 and 50 are compared with the case where the first and second end portions 40a, 40b, 50a and 50b are constant in cross-sectional area. It can suppress that the thermal resistance of the members 40 and 50 becomes small. That is, it can suppress that the temperature difference of the surface protection member 20 and the back surface protection member 30 becomes small.
- thermoelectric conversion device 1 Next, a method for manufacturing such a thermoelectric conversion device 1 will be described with reference to FIGS.
- an insulating substrate 10 is prepared, and a plurality of cylindrical first and second via holes 11 and 12 are formed by a drill or the like.
- the plurality of first and second via holes 11 and 12 are formed in a staggered pattern so as to be alternated.
- the first conductive paste 41 is filled into the first via hole 11 by a printing method using a mask 60 having a plurality of through holes 60 a and a squeegee 70. .
- the first conductive paste 41 in this embodiment, an organic solvent such as terpine which has a melting point of room temperature is added to an alloy powder in which metal atoms maintain a predetermined crystal structure. Prepare the converted version.
- the alloy powder constituting the first conductive paste 41 for example, Bi—Sb—Te alloy powder formed by mechanical alloy is used.
- the insulating base 10 is disposed so that the back surface 10b faces the suction paper 80, and the mask 60 is disposed on the surface 10a side of the insulating base 10. Thereafter, the first conductive paste 41 is filled into the first via hole 11 through the through hole 60a while the first conductive paste 41 is melted.
- the second conductive paste 51 is filled into the second via hole 12 by a printing method using a mask 61 and a squeegee 70 in which a plurality of through holes 61 a are formed. .
- the second conductive paste 51 in the present embodiment, an alloy powder in which metal atoms different from the metal atoms constituting the first conductive paste 41 maintain a predetermined crystal structure, Prepare a paste by adding an organic solvent such as terpine which has a melting point of room temperature.
- an organic solvent such as terpine which has a melting point of room temperature.
- the powder of the alloy constituting the second conductive paste 51 for example, a Bi—Te alloy powder formed by mechanical alloy is used.
- the mask 61 is disposed on the surface 10a side of the insulating base material 10, and the second conductive paste 51 is filled into the second via hole 12 through the through hole 61a while the second conductive paste 51 is melted.
- the adsorbing paper 80 may be made of a material that can absorb the organic solvent of the first and second conductive pastes 41 and 51, and general high-quality paper or the like is used.
- terpine that has a melting point of room temperature is used as the organic solvent contained in the first and second conductive pastes 41 and 51. For this reason, the organic solvent evaporates when the first and second conductive pastes 41 and 51 are filled.
- the organic solvent is further removed from the first and second conductive pastes 41 and 51. The solvent can be removed. That is, the alloy powder contained in the first and second conductive pastes 41 and 51 can be disposed in close contact with the first and second via holes 11 and 12.
- the insulating base material 10 filled with the first and second conductive pastes 41 and 51 is prepared.
- a copper foil or the like is formed on one surface 20a of the surface protection member 20 facing the insulating base material 10. Then, by appropriately patterning the copper foil, a plurality of surface patterns 21 that are separated from each other are formed.
- the first conductive paste 41 is applied to a predetermined location on the surface pattern 21 by a printing method using a mask 62 having a plurality of through holes 62a and a squeegee 70. Apply.
- the second conductive paste 51 is formed at a predetermined position on the surface pattern 21 by a printing method using a mask 63 having a plurality of through holes 63 a and a squeegee 70. Apply.
- the predetermined portion of the surface pattern 21 to which the first conductive paste 41 is applied is opposed to the first conductive paste 41 filled in the first via hole 11 when a laminate 90 described later is formed. It is a place.
- the predetermined portion of the surface pattern 21 to which the second conductive paste 51 is applied is opposite to the second conductive paste 51 filled in the second via hole 12 when a laminate 90 described later is formed. It is a place to do.
- first and second conductive pastes 41 and 51 are formed using terpine which has a melting point of room temperature as the organic solvent, the organic solvent evaporates during the application and is applied. Hardly flows. For this reason, by appropriately adjusting the through holes 62a and 63a of the masks 62 and 63, it is possible to suppress the first and second conductive pastes 41 and 51 applied to the surface pattern 21 from being spread and mixed together.
- the through holes 62a and 63a are formed in a cylindrical shape having a diameter larger than that of the first and second via holes 11 and 12. That is, the first and second conductive pastes 41 and 51 applied on the front surface pattern 21 and the back surface pattern 31 are filled in the first and second via holes 11 and 12 when a laminate 90 described later is formed. The first and second conductive pastes 41 and 51 are applied so as to protrude from the portions facing each other.
- FIGS. 3 (a) to 3 (c) the same steps as those in FIGS. 2 (d) to 2 (f) are performed, and the first and second portions are formed at predetermined positions on the back surface pattern 31.
- a paste coated with conductive pastes 41 and 51 is prepared.
- the back surface protection member 30, the insulating base material 10, and the surface protection member 20 are sequentially stacked to form a stacked body 90. More specifically, the surface 10a of the insulating base 10, sea urchin by which the first conductive paste 41 coated on the surface pattern 21 and the first conductive paste 41 filled in the first via holes 11 is in contact The surface protection member 20 is disposed. Further, the surface protection member 20 is arranged so that the second conductive paste 51 applied on the surface pattern 21 and the second conductive paste 51 filled in the second via hole 12 are in contact with each other.
- the back surface protection member so that the first conductive paste 41 applied on the back surface pattern 31 and the first conductive paste 41 filled in the first via hole 11 are in contact with the back surface 10 b side of the insulating base material 10. 30 is arranged. Further, the back surface protection member 30 is arranged so that the second conductive paste 51 applied on the back surface pattern 31 and the second conductive paste 51 filled in the second via hole 12 are in contact with each other. As a result, the first and second conductive pastes 41 and 51 are disposed between the first and second conductive pastes 41 and 51 filled in the first and second via holes 11 and 12 and the surface pattern 21. In addition, the first and second conductive pastes 41 and 51 are disposed between the first and second conductive pastes 41 and 51 filled in the first and second via holes 11 and 12 and the back surface pattern 31.
- a laminate 90 is configured.
- this laminate 90 is disposed between a pair of press plates (not shown), and the laminate 90 is integrated by applying pressure while heating in a vacuum state from the upper and lower surfaces in the lamination direction. An integration process is performed.
- the first and second interlayer connection members 40 and 50 are formed of (sintered alloy). Specifically, first end portions 40 a and 50 a in the first and second interlayer connection members 40 and 50 are formed from the first and second conductive pastes 41 and 51 applied on the surface pattern 21. Further, second end portions 40 b and 50 b in the first and second interlayer connection members 40 and 50 are formed from the first and second conductive pastes 41 and 51 applied on the back surface pattern 31.
- intermediate portions 40 c and 50 c in the first and second interlayer connection members 40 and 50 are formed from the first and second conductive pastes 41 and 51 filled in the first and second via holes 11 and 12. Since these first end portions 40a and 50a, second end portions 40b and 50b, and intermediate portions 40c and 50c are also integrated, first and second interlayer connection members 40 and 50 having an I-shaped cross section are configured.
- the powder of the alloy constituting the first and second interlayer connection members 40 and 50 and the surface pattern 21 and the back surface pattern 31 are also pressed into contact with the first and second interlayer connection members 40 and 50 and the surface.
- the pattern 21 and the back surface pattern 31 are also connected.
- a cushioning material such as rock wool paper may be disposed between the laminated body 90 and the press plate.
- the first and second conductive pastes 41 and 51 constituting the intermediate portions 40c and 50c are arranged in the first and second via holes 11 and 12 of the insulating base material 10, respectively.
- the first and second conductive pastes 41 and 51 constituting the first end portions 40a and 50a are arranged on the surface pattern 21, and the first and second end portions 40b and 50b constituting the second end portions 40b and 50b are arranged on the back surface pattern 31, respectively.
- Second conductive pastes 41 and 51 are arranged.
- the back surface protection member 30, the insulating base material 10, and the surface protection member 20 are laminated
- thermoelectric conversion device 1 having the first and second interlayer connection members 40 and 50 having the above-described configuration can be easily manufactured by appropriately changing the conditions at the time.
- the alloy powder is not limited to these.
- the alloy powder constituting the first and second conductive pastes 41 and 51 is appropriately selected from those in which copper, constantan, chromel, alumel, etc. are alloyed with iron, nickel, chromium, copper, silicon or the like. May be.
- the first via hole 11 is filled on the surface 10a of the insulating base material 10. Further, the first conductive paste 41 is further applied on the first conductive paste 41.
- the second conductive paste 51 is further applied on the second conductive paste 51 filled in the second via hole 12 on the surface 10 a of the insulating substrate 10.
- the step of FIG. 4A can be performed by a printing method using the mask 62 and the squeegee 70 described in the steps of FIG. 2E and FIG.
- the step of FIG. 4B can be performed by a printing method using the mask 63 and the squeegee 70 described in the steps of FIG. 2F and FIG.
- the through holes 62 a and 63 a have a cylindrical shape whose diameter is larger than that of the first and second via holes 11 and 12. That is, in the process of FIG. 4A and FIG. 4B, the first and second protrusions protrude from the portion of the surface 10a of the insulating base 10 that is located around the first and second via holes 11 and 12. Two conductive pastes 41 and 51 are applied.
- a support base 100 is prepared in which through holes 100a are formed at locations corresponding to the first and second via holes 11 and 12. Then, the insulating base material 10 is fixed to the support base 100 so that the first and second conductive pastes 41 and 51 rising from the surface 10a of the insulating base material 10 are accommodated in the through holes 100a. Then, on the back surface 10 b of the insulating substrate 10, the first conductive paste 41 is further applied on the first conductive paste 41 filled in the first via hole 11.
- the second conductive paste 51 is further applied on the second conductive paste 51 filled in the second via hole 12 on the back surface 10 b of the insulating substrate 10.
- 4C and 4D are performed by a printing method using the masks 62 and 63 and the squeegee 70 as in the steps of FIGS. 4A and 4B. Can do. That is, also in the process of FIG. 4C and FIG. 4D, the first, the second, and the second via holes 11 and 12 on the back surface 10b of the insulating base 10 protrude from the first and second portions. Second conductive pastes 41 and 51 are applied.
- a laminate 90 is formed.
- the first and second conductive materials further applied to the surface 10a of the insulating base material 10 on the first and second conductive pastes 41 and 51 filled in the first and second via holes 11 and 12, respectively.
- the surface protection member 20 is disposed so that the conductive pastes 41 and 51 and the surface pattern 21 are in contact with each other.
- the first and second conductive pastes 41 further applied on the first and second conductive pastes 41 and 51 filled in the first and second via holes 11 and 12 on the back surface 10b of the insulating substrate 10.
- 51 and the back surface pattern 31 are arranged so that the back surface protection member 30 is disposed.
- the first and second conductive pastes 41 and 51 applied on the first and second conductive pastes 41 and 51 filled in the first and second via holes 11 and 12 are first to second ends. Portions 40a, 40b, 50a, and 50b are formed, and intermediate portions 40c and 50c are formed from the first and second conductive pastes 41 and 51 filled in the first and second via holes 11 and 12, respectively.
- the conversion device 1 is manufactured.
- the first and second conductive materials are further formed on the first and second conductive pastes 41 and 51 filled in the first and second via holes 11 and 12, respectively. Even if the pastes 41 and 51 are applied, the same effects as in the first embodiment can be obtained.
- surface protection member 20 is arranged on the surface 10a side of insulating substrate 10, and intermediate composition 90a is constituted. Specifically, the first and second conductive materials further applied to the surface 10a of the insulating base material 10 on the first and second conductive pastes 41 and 51 filled in the first and second via holes 11 and 12, respectively. The surface protection member 20 is disposed so that the conductive pastes 41 and 51 and the surface pattern 21 are in contact with each other.
- an integration step is performed in which the intermediate structure 90a is pressed and integrated while being heated in vacuum from both the upper and lower surfaces in the stacking direction.
- the first and second conductive pastes 41 and 51 applied on the first and second conductive pastes 41 and 51 filled in the first and second via holes 11 and 12 the first end portion 40a, 50a is formed.
- intermediate portions 40 c and 50 c are formed from the first and second conductive pastes 41 and 51 filled in the first and second via holes 11 and 12. That is, in the present embodiment, the first end portions 40a and 50a and the intermediate portions 40c and 50c of the first and second interlayer connection members 40 and 50 are formed first.
- the first and second conductive materials are further provided on the intermediate portions 40c and 50c disposed in the first and second via holes 11 and 12, respectively. Pastes 41 and 51 are applied.
- the back surface protection member 30 is arranged on the back surface 10 b side of the insulating base material 10 to constitute the laminate 90.
- the first and second conductive pastes 41 and 51 further applied to the back surface 10b of the insulating base material 10 on the intermediate portions 40c and 50c disposed in the first and second via holes 11 and 12;
- the back surface protection member 30 is disposed so that the back surface pattern 31 comes into contact.
- an integration process is performed in which the laminate 90 is pressed and integrated while being heated in a vacuum state from the upper and lower surfaces in the stacking direction.
- the first and second interlayer connection members 40 and 50 are formed from the first and second conductive pastes 41 and 51 further applied on the intermediate portions 40c and 50c disposed in the first and second via holes 11 and 12, respectively.
- the second end portions 40b and 50b are formed.
- the suction paper 80 may not be used when the first and second via holes 11 and 12 are filled with the first and second conductive pastes 41 and 51.
- first and second conductive pastes 41 and 51 when applied, they may be formed by a plating process instead of a printing method.
- an organic solvent such as paraffin having a melting point of 43 ° C. may be used as the organic solvent contained in the first and second conductive pastes 41 and 51.
- the organic solvent is evaporated after, for example, the steps of FIGS. 2 (e), 2 (f), 3 (b) and 3 (c) are performed. It is preferable that the first and second conductive pastes 41 and 51 not flow. That is, it is preferable to suppress mixing of the first and second conductive pastes 41 and 51 by evaporating the organic solvent.
- the through holes 62a and 63a may be smaller in diameter than the first and second via holes 11 and 12. That is, the first and second conductive pastes 41 and 51 applied on the front surface pattern 21 and the back surface pattern 31 are filled in the first and second via holes 11 and 12 when the stacked body 90 is formed. It may be applied only inside the portion facing the first and second conductive pastes 41 and 51. In such a case, the direction parallel to the planar direction of the insulating base material 10 is appropriately controlled by appropriately controlling the application amount of the first and second conductive pastes 41 and 51, the conditions for integrating the laminated body 90, and the like.
- the first and second interlayer connection members 40 and 50 having the cross-sectional areas of the first end portions 40a and 50a and the second end portions 40b and 50b larger than the cross-sectional areas of the intermediate portions 40c and 50c are formed. That's fine.
- the through holes 62 a and 63 a may be smaller in diameter than the first and second via holes 11 and 12.
- the intermediate portions 40c and 50c may be formed by sintering the first and second conductive pastes 41 and 51 in advance after performing the step of FIG. 2C. Moreover, you may prepare what embedded the intermediate parts 40c and 50c in the 1st, 2nd interlayer connection members 40 and 50 in the insulating base material 10. FIG. Furthermore, after performing the process of FIG.2 (f), you may sinter the 1st, 2nd electroconductive pastes 41 and 51 apply
- the first and second conductive pastes 41 and 51 applied on the back surface pattern 31 may be sintered. That is, you may prepare what formed the 2nd edge part 40b, 50b in the 1st, 2nd interlayer connection members 40 and 50 on the back surface pattern 31.
- FIG. 1 the first and second conductive pastes 41 and 51 applied on the back surface pattern 31 may be sintered.
- the intermediate parts 40c and 50c are arrange
- FIG. , 50a, and the second end portions 40b, 50b may be disposed between the intermediate portions 40c, 50c and the back surface pattern 31. Even if such a laminated body 90 is configured, the first end portions 40a and 50a and the intermediate portions 40c and 50c, the second end portions 40b and 50b, and the intermediate portion 40c are integrated when integrated in the step of FIG. , 50c are connected, the thermoelectric conversion device 1 having the above-described configuration is manufactured.
- all of the 1st, 2nd conductive pastes 41 and 51 may not be sintered, but only a part may be sintered.
- the laminated body 90 is configured, only the first and second conductive pastes 41 and 51 filled in the first and second via holes 11 and 12 are sintered to form the intermediate portions 40c and 50c.
- the combination can be changed as appropriate.
- the second interlayer connection member 50 may be composed of Ag-Sn based metal particles. That is, the second interlayer connection member 50 may be formed not for the purpose of mainly exhibiting the effect of thermoelectric conversion but for the purpose of electrical conduction. In this case, the location where the first and second via holes 11 and 12 are formed is appropriately changed, and the shapes of the front surface pattern 21 and the back surface pattern 31 are appropriately changed, whereby the first interlayer connection member 40 is changed to the second interlayer connection member. 50 may be connected in parallel.
- thermoelectric conversion occurs when two different types of metals are connected, in each of the above embodiments, only the first via hole 11 is formed in the insulating base material 10 and the first interlayer connection is made to the first via hole 11. Only the member 40 may be arranged. That is, the present invention can be applied to a thermoelectric conversion device in which only one type of interlayer connection member is disposed on the insulating base material 10.
- Thermoelectric conversion apparatus 10 Insulating base material 10a Surface 10b Back surface 20 Surface protection member 21 Surface pattern 30 Back surface protection member 31 Back surface pattern 40, 50 1st, 2nd interlayer connection member (thermoelectric conversion element) 40a, 50a 1st end part 40b, 50b 2nd end part 40c, 50c Intermediate part
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Abstract
Description
本発明の第1実施形態について図面を参照しつつ説明する。図1に示されるように、本実施形態の熱電変換装置1は、絶縁基材10、表面保護部材20、裏面保護部材30が一体化され、この一体化されたものの内部で異種金属である第1層間接続部材40と第2層間接続部材50とが交互に直列に接続されて構成されている。なお、本実施形態では、第1層間接続部材40と第2層間接続部材50とが本発明の熱電変換素子に相当している。
そして、この絶縁基材10には、当該絶縁基材10を厚さ方向に貫通するように、第1層間接続部材40と、当該第1層間接続部材40と異種金属となる第2層間接続部材50とが配置されている。本実施形態では、これら第1層間接続部材40および第2層間接続部材50は、互い違いになるように千鳥格子状パターンに配置されている。
本発明の第2実施形態について説明する。本実施形態は、第1実施形態の製造方法に対して絶縁基材10の表面10aおよび裏面10bに第1、第2導電性ペースト41、51を塗布するものであり、その他に関しては第1実施形態と同様であるため、ここでは説明を省略する。
本発明の第3実施形態について説明する。本実施形態は、第2実施形態の製造方法に対して絶縁基材10と表面保護部材20とを一体化した後に、これらを裏面保護部材30と一体化するものであり、その他に関しては第2実施形態と同様であるため、ここでは説明を省略する。
本発明は上記した実施形態に限定されるものではなく、本発明の主旨を逸脱しない範囲内において適宜変更が可能である。
10 絶縁基材
10a 表面
10b 裏面
20 表面保護部材
21 表面パターン
30 裏面保護部材
31 裏面パターン
40、50 第1、第2層間接続部材(熱電変換素子)
40a、50a 第1端部
40b、50b 第2端部
40c、50c 中間部
Claims (5)
- 複数の熱電変換素子(40、50)が配置された絶縁基材(10)と、
前記絶縁基材の表面(10a)に配置され、所定の前記熱電変換素子と電気的に接続される表面パターン(21)が形成された表面保護部材(20)と、
前記絶縁基材の表面と反対側の裏面(10b)に配置され、所定の前記熱電変換素子と電気的に接続される裏面パターン(31)が形成された裏面保護部材(30)と、を備え、
前記熱電変換素子は、前記表面パターンと接続される第1端部(40a、50a)、前記裏面パターンと接続される第2端部(40b、50b)、前記第1、第2端部を連結する中間部(40c、50c)を有し、前記絶縁基材の平面方向と平行な方向の断面積において、前記第1、第2端部の断面積が前記中間部の断面積より大きくされた熱電変換装置の製造方法において、
厚さ方向に貫通する複数のビアホール(11、12)が形成され、前記ビアホールに前記中間部または前記中間部を構成する導電性ペースト(41、51)が配置された前記絶縁基材を用意する工程と、
前記表面パターンが形成された前記表面保護部材を用意する工程と、
前記裏面パターンが形成された前記裏面保護部材を用意する工程と、
前記絶縁基材の表面に前記表面保護部材を配置すると共に前記絶縁基材の裏面に前記裏面保護部材を配置して積層体(90)を構成する工程と、
前記積層体を一体化する工程と、有し、
前記積層体を構成する工程では、前記中間部または前記中間部を構成する前記導電性ペーストと前記表面パターンとの間に、前記第1端部または前記第1端部を構成する前記導電性ペーストが配置されていると共に、前記中間部または前記中間部を構成する前記導電性ペーストと前記裏面パターンとの間に、前記第2端部または前記第2端部を構成する前記導電性ペーストが配置されている前記積層体を構成し、
前記積層体を一体化する工程では、前記積層体を加熱しながら積層方向から加圧することにより、前記第1、第2端部および前記中間部を有する前記熱電変換素子を形成することを特徴とする熱電変換装置の製造方法。 - 前記絶縁基材を用意する工程では、前記ビアホールに前記導電性ペーストが充填されたものを用意し、
前記表面保護部材を用意する工程では、前記表面パターン上に前記導電性ペーストが配置されたものを用意し、
前記裏面保護部材を用意する工程では、前記裏面パターン上に前記導電性ペーストが配置されたものを用意し、
前記積層体を構成する工程では、前記絶縁基材の表面に、前記表面パターン上に配置された前記導電性ペーストと前記ビアホールに充填された前記導電性ペーストとが接触するように前記表面保護部材を配置すると共に、前記絶縁基材の裏面に、前記裏面パターン上に配置された前記導電性ペーストと前記ビアホールに充填された前記導電性ペーストとが接触するように前記裏面保護部材を配置し、
前記積層体を一体化する工程では、前記ビアホールに充填された前記導電性ペーストと前記表面パターンとの間に配置された前記導電性ペースト、前記ビアホールに充填された前記導電性ペーストと前記裏面パターンとの間に配置された前記導電性ペースト、前記ビアホールに充填された前記導電性ペーストを焼結し、前記ビアホールに充填された前記導電性ペーストと前記表面パターンとの間に配置された前記導電性ペーストから前記第1端部、前記ビアホールに充填された前記導電性ペーストと前記裏面パターンとの間に配置された前記導電性ペーストから前記第2端部、前記ビアホールに充填された前記導電性ペーストから前記中間部を形成することにより、前記第1、第2端部および前記中間部を有する前記熱電変換素子を構成することを特徴とする請求項1に記載の熱電変換装置の製造方法。 - 前記絶縁基材を用意する工程では、前記ビアホールに前記導電性ペーストを充填する工程と、前記絶縁基材の表面側において、前記ビアホールに充填された前記導電性ペースト上にさらに前記導電性ペーストを配置する工程と、前記絶縁基材の裏面側において、前記ビアホールに充填された前記導電性ペースト上にさらに前記導電性ペーストを配置する工程と、有し、
前記積層体を構成する工程では、前記絶縁基材の表面に、前記ビアホールに充填された前記導電性ペースト上にさらに配置された前記導電性ペーストと前記表面パターンとが接触するように前記表面保護部材を配置すると共に、前記絶縁基材の裏面に、前記ビアホールに充填された前記導電性ペースト上にさらに配置された前記導電性ペーストと前記裏面パターンとが接触するように前記裏面保護部材を配置し、
前記積層体を一体化する工程では、前記ビアホールに充填された前記導電性ペーストと前記表面パターンとの間に配置された前記導電性ペースト、前記ビアホールに充填された前記導電性ペーストと前記裏面パターンとの間に配置された前記導電性ペースト、前記ビアホールに充填された前記導電性ペーストを焼結し、前記ビアホールに充填された前記導電性ペーストと前記表面パターンとの間に配置された前記導電性ペーストから前記第1端部、前記ビアホールに充填された前記導電性ペーストと前記裏面パターンとの間に配置された前記導電性ペーストから前記第2端部、前記ビアホールに充填された前記導電性ペーストから前記中間部を形成することにより、前記第1、第2端部および前記中間部を有する前記熱電変換素子を構成することを特徴とする請求項1に記載の熱電変換装置の製造方法。 - 前記導電性ペーストとして、複数の金属原子が所定の結晶構造を維持している合金の粉末に有機溶剤を加えてペースト化したものを用い、
前記積層体を一体化する工程では、前記熱電変換素子として、前記複数の金属原子が当該金属原子の結晶構造を維持した状態で焼結された焼結合金を形成することを特徴とする請求項2または3に記載の熱電変換装置の製造方法。 - 複数の熱電変換素子(40、50)が配置された絶縁基材(10)と、
前記絶縁基材の表面(10a)に配置され、所定の前記熱電変換素子と電気的に接続される表面パターン(21)が形成された表面保護部材(20)と、
前記絶縁基材の表面と反対側の裏面(10b)に配置され、所定の前記熱電変換素子と電気的に接続される裏面パターン(31)が形成された裏面保護部材(30)と、を備え、
前記熱電変換素子は、前記表面パターンと接続される第1端部(40a、50a)、前記裏面パターンと接続される第2端部(40b、50b)、前記第1、第2端部を連結する中間部(40c、50c)を有し、前記絶縁基材の平面方向と平行な方向の断面積において、前記第1、第2端部の断面積が前記中間部の断面積より大きくされた熱電変換装置の製造方法において、
厚さ方向に貫通する複数のビアホール(11、12)が形成され、前記ビアホールに前記中間部または前記中間部を構成する導電性ペースト(41、51)が配置された前記絶縁基材を用意する工程と、
前記表面パターンが形成された前記表面保護部材を用意する工程と、
前記絶縁基材の表面側に前記表面保護部材を配置して中間構成体(90a)を構成する工程と、
前記中間構成体を一体化する工程と、
前記裏面パターンが形成された前記裏面保護部材を用意する工程と、
前記絶縁基材の裏面側に前記裏面保護部材を配置して積層体(90)を構成する工程と、
前記積層体を一体化する工程と、を有し、
前記中間構成体を構成する工程では、前記中間部または前記中間部を構成する前記導電性ペーストと前記表面パターンとの間に、前記第1端部または前記第1端部を構成する前記導電性ペーストが配置されている前記中間構成体を構成し、
前記中間構成体を一体化する工程では、前記中間構成体を加熱しながら積層方向から加圧することにより、前記第1端部および前記中間部を有する前記熱電変換素子の一部を形成し、
前記積層体を構成する工程では、前記中間部と前記裏面パターンとの間に、前記第2端部または前記第2端部を構成する前記導電性ペーストが配置されている前記積層体を構成し、
前記積層体を一体化する工程では、前記積層体を加熱しながら積層方向から加圧することにより、前記第1、第2端部および前記中間部を有する前記熱電変換素子を形成することを特徴とする熱電変換装置の製造方法。
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WO2013069347A1 (ja) * | 2011-11-08 | 2013-05-16 | 富士通株式会社 | 熱電変換素子及びその製造方法 |
US20130218241A1 (en) * | 2012-02-16 | 2013-08-22 | Nanohmics, Inc. | Membrane-Supported, Thermoelectric Compositions |
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US6127619A (en) * | 1998-06-08 | 2000-10-03 | Ormet Corporation | Process for producing high performance thermoelectric modules |
JP4850070B2 (ja) * | 2004-10-18 | 2012-01-11 | 義臣 近藤 | ペルチェ素子又はゼーベック素子の製造方法 |
JP2009117792A (ja) | 2007-10-19 | 2009-05-28 | Ube Ind Ltd | 熱電変換モジュール及びその製造方法 |
JP5376087B1 (ja) | 2012-05-30 | 2013-12-25 | 株式会社デンソー | 熱電変換装置の製造方法 |
JP2014007376A (ja) | 2012-05-30 | 2014-01-16 | Denso Corp | 熱電変換装置 |
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JP2004165366A (ja) | 2002-11-12 | 2004-06-10 | Seiko Instruments Inc | 熱電変換素子とその製造方法 |
JP2010510682A (ja) * | 2006-11-21 | 2010-04-02 | エボニック デグサ ゲーエムベーハー | 熱電素子、前記素子の作製方法、および前記素子の使用 |
WO2013069347A1 (ja) * | 2011-11-08 | 2013-05-16 | 富士通株式会社 | 熱電変換素子及びその製造方法 |
US20130218241A1 (en) * | 2012-02-16 | 2013-08-22 | Nanohmics, Inc. | Membrane-Supported, Thermoelectric Compositions |
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Also Published As
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CN105659398A (zh) | 2016-06-08 |
CN105659398B (zh) | 2018-08-10 |
EP3062357A4 (en) | 2017-05-31 |
KR101888113B1 (ko) | 2018-08-14 |
US20160268493A1 (en) | 2016-09-15 |
JP2015084365A (ja) | 2015-04-30 |
EP3062357A1 (en) | 2016-08-31 |
KR20160058161A (ko) | 2016-05-24 |
TWI611603B (zh) | 2018-01-11 |
US9553250B2 (en) | 2017-01-24 |
TW201535808A (zh) | 2015-09-16 |
JP6032175B2 (ja) | 2016-11-24 |
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