WO2015051682A1 - 像素电路及其驱动方法、薄膜晶体管背板 - Google Patents

像素电路及其驱动方法、薄膜晶体管背板 Download PDF

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Publication number
WO2015051682A1
WO2015051682A1 PCT/CN2014/085494 CN2014085494W WO2015051682A1 WO 2015051682 A1 WO2015051682 A1 WO 2015051682A1 CN 2014085494 W CN2014085494 W CN 2014085494W WO 2015051682 A1 WO2015051682 A1 WO 2015051682A1
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Prior art keywords
transistor
signal
terminal
gate
module
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PCT/CN2014/085494
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English (en)
French (fr)
Inventor
尹静文
吴仲远
王俪蓉
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京东方科技集团股份有限公司
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Priority to US14/437,031 priority Critical patent/US9489894B2/en
Publication of WO2015051682A1 publication Critical patent/WO2015051682A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0219—Reducing feedthrough effects in active matrix panels, i.e. voltage changes on the scan electrode influencing the pixel voltage due to capacitive coupling
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/06—Adjustment of display parameters
    • G09G2320/0626—Adjustment of display parameters for control of overall brightness

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a pixel circuit and a driving method thereof, and a thin film transistor backplane.
  • OLEDs Organic light-emitting diodes
  • the conventional passive matrix OLED display device requires a shorter driving time of a single pixel as the display size increases, so that it is necessary to increase the transient current and increase the power consumption.
  • the application of high current will cause the voltage drop on the nano-indium-tin metal oxide line to be too large, and the OLED operating voltage is too high, thereby reducing its efficiency.
  • the active matrix OLED display device (AMOLED, Active Matrix OLED) can solve these problems by progressively scanning the input OLED current through a switching transistor.
  • the main problem to be solved is the luminance non-uniformity between the compensation circuits of the respective AMOLED pixel units.
  • the AMOLED thin film transistor (TFT, Thin-Film Transistor) is used to construct a pixel circuit to provide a corresponding driving current for the organic light emitting diode.
  • TFT Thin-Film Transistor
  • a low temperature polysilicon TFT transistor or an oxide TFT transistor is mostly used.
  • low temperature polysilicon TFT transistors and oxide TFT transistors have higher mobility and more stable characteristics, and are more suitable for use in AMOLED displays.
  • low-temperature polysilicon TFT transistors fabricated on large-area glass substrates often have non-uniformities in electrical parameters such as threshold voltage and mobility, and this non-uniformity is converted into organic luminescence. Diode drive current difference and brightness difference, and is perceived by the human eye, that is, color unevenness.
  • an active matrix organic light emitting diode fabricated by a TFT transistor process using an oxide may have a P type or an N type in a pixel circuit, but whether it is a P type or a P type
  • the N-type TFT transistor is used to realize the pixel circuit, and the current flowing through the organic light-emitting diode not only changes with the change of the on-voltage of the organic light-emitting diode over a long period of time, but also with the TFT transistor for driving the organic light-emitting diode.
  • the threshold voltage drift varies. As a result, it will affect the brightness uniformity of the OLED display. With brightness constant.
  • the present disclosure provides a pixel circuit and a driving method thereof, and a thin film transistor backplane, which can solve the problem that the threshold voltage drift of the driving transistor occurs when the pixel circuit of the prior art is driven.
  • a pixel circuit including a driving transistor, a signal loading module, a lighting control module, and a storage capacitor is provided;
  • a gate of the driving transistor is coupled to a third end of the signal loading module and a second end of the storage capacitor; a first end of the driving transistor and a second end of the signal loading module and the illuminating The second end of the control module is connected; the second end of the driving transistor is connected to the fourth end of the signal loading module and the third end of the lighting control module;
  • a first end of the storage capacitor is coupled to a first end of the signal loading module and a first end of the illumination control module;
  • the fifth end of the signal loading module receives the data signal
  • the first end of the illumination control module and the first end of the signal loading module both receive a first voltage signal
  • the fourth end of the illumination control module outputs a driving voltage signal.
  • the signal loading module includes a first transistor, a second transistor, and a third transistor; a gate of the first transistor receives a gate control signal of the current stage; a first end of the first transistor serves as the signal a third end of the loading module, a second end of the storage capacitor, a gate of the driving transistor, and a second end of the second transistor; a second end of the first transistor as the signal loading module a fourth end, connecting the second end of the driving transistor and the third end of the illumination control module;
  • the gate of the second transistor receives a first-stage gate control signal or a start signal; the first end of the second transistor receives the first voltage signal, and connects the storage as a first end of the signal loading module a first end of the capacitor and a first end of the illuminating control module; a second end of the second transistor serving as a third end of the signal loading module, connecting the first end of the first transistor, the storing a second end of the capacitor and a gate of the driving transistor;
  • a gate of the third transistor receives a gate control signal of the current stage; a first end of the third transistor Receiving a data signal; a second end of the third transistor serving as a second end of the signal loading module, connecting a first end of the driving transistor and a second end of the lighting control module.
  • the illumination control module includes a fourth transistor and a fifth transistor;
  • a gate of the fourth transistor receives a light-emitting control signal; a first end of the fourth transistor receives a first voltage signal, and serves as a first end of the light-emitting control module to connect the first end of the storage capacitor a first end of the signal loading module; a second end of the fourth transistor as a second end of the lighting control module, connecting a first end of the driving transistor and a second end of the signal loading module;
  • a gate of the fifth transistor receives a light emission control signal; a first end of the fifth transistor serves as a third end of the light emission control module, and a second end of the driving transistor and a signal loading module are connected The fourth end of the fifth transistor serves as a fourth end of the illumination control module, and outputs a driving voltage signal.
  • the pixel circuit further includes an organic light emitting diode, wherein the organic light emitting diode is connected to the fourth end of the light emitting control module, and the organic light emitting diode is configured to receive the driving voltage signal to emit light.
  • the pixel circuit further includes a first voltage signal source, and an output end of the first voltage signal source is connected to a first end of the signal loading module and a first end of the illumination control module, where A voltage signal source is configured to output the first voltage signal to the signal loading module and the illumination control module.
  • the pixel circuit further includes a second voltage signal source, wherein: the driving transistor is an n-type transistor, a first end of the organic light emitting diode is connected to a fourth end of the light emitting control module; The second end of the diode is connected to the second voltage signal source; the first voltage signal is a high voltage signal, and the second voltage signal source is a low voltage signal source.
  • the driving transistor is an n-type transistor, a first end of the organic light emitting diode is connected to a fourth end of the light emitting control module; The second end of the diode is connected to the second voltage signal source; the first voltage signal is a high voltage signal, and the second voltage signal source is a low voltage signal source.
  • the pixel circuit further includes a second voltage signal source, wherein: the driving transistor is a p-type transistor, and the second end of the organic light emitting diode is connected to the fourth end of the light emitting control module; The first end of the diode is coupled to the second voltage signal source; the first voltage signal is a low voltage signal, and the second voltage signal source is a high voltage signal source.
  • the pixel circuit further includes a gate control signal source and a start signal source, and the gate of the first transistor and the gate of the third transistor in the signal loading module are connected to the gate control signal source of the current stage.
  • the gate of the second transistor in the signal loading module is connected to a first-level gate control signal source or a start signal source, and the current-level gate control signal source is used to output the current-level gate control signal
  • the upper gate control signal source is configured to output the upper gate control signal
  • the start signal source is configured to output the start signal.
  • the pixel circuit further includes a light emission control signal source, the light emission control signal source is connected to a gate of the fourth transistor and a gate of the fifth transistor in the light emission control module, and the light emission control A signal source is used to output the illumination control signal.
  • a driving method for a pixel circuit as described above comprising:
  • the first end of the signal loading module is controlled to receive the first voltage signal; and the third end of the signal loading module is controlled to load the first voltage signal to the second end of the storage capacitor;
  • the storage capacitor performs capacitance resetting;
  • the second end of the storage capacitor turns on the driving transistor; the second end of the storage capacitor is via a third end of the signal loading module, a fourth end of the signal loading module, and the driving Discharging a transistor to a second end of the signal loading module; receiving, by the second end of the signal loading module, the data signal, and transmitting the data signal via the driving transistor, the fourth end of the signal loading module, and The third end of the signal loading module is loaded to the second end of the storage capacitor;
  • the second end of the storage capacitor continuously turns on the driving transistor, and loads the data signal to the driving transistor;
  • the first end of the illuminating control module receives the first voltage signal, and passes through the illuminating control module a second end and the driving transistor are loaded to a third end of the illumination control module;
  • the driving transistor loads a data signal to a third end of the illumination control module; and is connected by a fourth end of the illumination control module Output drive voltage signal.
  • a thin film transistor backplane including the pixel circuit described above.
  • the pixel circuit of the present disclosure can effectively eliminate the non-uniformity caused by the driving voltage of the driving transistor and the image sticking caused by the threshold voltage drift in the process of driving the organic light emitting diode;
  • the source matrix organic light emitting diode displays the problem of uneven display brightness between the organic light emitting diodes of different pixel units in the device due to different threshold voltages of the driving transistors; improves the driving effect of the pixel circuit on the organic light emitting diode, and further improves The quality of the active matrix organic light emitting diode display device.
  • FIG. 1 is a schematic diagram of circuit connections of the pixel circuit in the embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of circuit connection of the pixel circuit in the embodiment of the present disclosure
  • FIG. 3 is a schematic diagram of circuit connection of the pixel circuit in the embodiment of the present disclosure.
  • FIG. 4 is a schematic diagram of a circuit connection of a pixel circuit in a reset phase according to an embodiment of the present disclosure
  • FIG. 5 is a schematic diagram of a circuit connection of a pixel circuit in a storage phase according to an embodiment of the present disclosure
  • FIG. 7 is a schematic diagram of timing control of the driving method in the embodiment of the present disclosure.
  • the pixel circuit of the embodiment of the present disclosure is mainly used for the active matrix organic light emitting diode display device, as shown in FIG. 4, which respectively denotes the first end, the second end, the third end, and the fourth end of the illuminating control module.
  • Driving compensation of the organic light emitting diode, each organic light emitting diode is driven and compensated by a pixel circuit, and each pixel circuit comprises: a driving transistor DTFT, a signal loading module, a light emitting control module and a storage capacitor Cs;
  • a gate of the driving transistor DTFT is connected to a third end 3 of the signal loading module and a second end of the storage capacitor Cs; a first end of the driving transistor DTFT (ie, an upper end of the DTFT as shown)
  • the source is connected to the second end 2 of the signal loading module and the second end 2' of the illumination control module; the second end of the driving transistor DTFT (ie, the lower end of the DTFT as shown, the drain) Connected to the fourth end 4 of the signal loading module and the third end 3' of the lighting control module; the first end of the storage capacitor Cs and the first end 1 of the signal loading module and the illumination control The first end of the module is connected;
  • the fifth end 5 of the signal loading module receives the data signal V DATA ;
  • the first end of the illuminating control module and the first end of the signal loading module receive the first voltage signal ELVDD;
  • the fourth end 4' of the illumination control module outputs a drive voltage signal Vgs.
  • the pixel circuit of the embodiment further includes an organic light emitting diode OLED, the organic light emitting diode OLED is connected to the fourth end 4 ′ of the light emitting control module, and the organic light emitting diode OLED is configured to receive the driving voltage signal Vgs Glowing.
  • the signal loading module receives the data signal V DATA , and loads the data signal V DATA to the second end of the storage capacitor Cs and the gate of the driving transistor DTFT;
  • the second end of the capacitor Cs is boosted to V DATA +V th ;
  • V th is the threshold voltage of the driving transistor, thereby causing the storage capacitor to ⁇ the data signal V DATA and the threshold voltage V th of the driving transistor Collecting and storing; and since the voltage of the second end of the storage capacitor is equal to the gate voltage of the driving transistor, the gate voltage of the driving transistor is also v DATA + ⁇ ⁇ and functions as a storage capacitor
  • the gate voltage of the driving transistor is kept as V DATA + V th ;
  • the illuminating control module receives the first voltage signal ELVDD, so that the first terminal voltage of the driving transistor DTFT is the first voltage signal V DD , and the voltage of the second terminal of the driving transistor DTFT is
  • V 0IJED is the voltage across the organic light emitting diode OLED
  • the driving current input to the organic light emitting diode OLED through the driving transistor is
  • IoL ED - K - [V gs - V where K is the current constant associated with the drive transistor
  • Vgs driving current I 0IjED ⁇ K ⁇ [V DA T A + ⁇ th _ ⁇ OLED ⁇ ⁇ th ⁇
  • the driving current I 0LED passing through the driving transistor is only related to V DATA and
  • VOLED is related, and has nothing to do with the threshold voltage V TH of the driving transistor; and V 0IJED tends to be a constant after the organic light emitting diode is used for a long time. Therefore, even if ⁇ ⁇ is less than 0, it can be well compensated, and the influence of the threshold voltage non-uniformity and drift is basically eliminated.
  • TFT thin film transistor
  • the influence of the non-uniformity of the threshold voltage can be compensated, so that the organic compensation can be well compensated.
  • the brightness of the LED is not uniform, so it is more applicable.
  • the above structure can effectively solve the problem of wide voltage drift, non-uniformity of the enhancement or depletion driving transistor, and non-uniformity and aging of the organic light emitting diode voltage.
  • the pixel circuit of the present disclosure can effectively eliminate the non-uniformity caused by the driving voltage of the driving transistor and the image sticking caused by the threshold voltage drift in the process of driving the organic light emitting diode;
  • the source matrix organic light emitting diode displays the problem of uneven display brightness between the organic light emitting diodes of different pixel units in the device due to different threshold voltages of the driving transistors; improves the driving effect of the pixel circuit on the organic light emitting diode, and further improves The quality of the active matrix organic light emitting diode display device.
  • the module includes a first transistor T1, a second transistor T2, and a third transistor T3;
  • the gate of the first transistor T1 receives the gate control signal V ⁇ t); the first end of the first transistor serves as a third end of the signal loading module, and the second terminal of the storage capacitor Cs is connected a second end of the first transistor T1, and a second end of the first transistor T1 as a fourth end of the signal loading module, connected to the driving transistor DTFT a second end and a third end 3' of the illumination control module;
  • the gate of the second transistor T2 receives the upper gate control signal Wherein, for the pixel circuit of the first stage, since there is no gate control signal of the previous stage, it provides a start signal, and the start signal has the same function as the upper gate control signal, and the timing is also the same as other
  • the first stage gate control signal received by the stage pixel circuit is the same; the first end of the second transistor T2 receives the first voltage signal ELVDD, and is connected as the first end of the signal loading module to the first of the storage capacitor Cs
  • the first end of the second transistor T2 serves as a third end of the signal loading module, and connects the first end of the first transistor T1 to the storage capacitor.
  • the gate of the third transistor T3 receives the gate control signal V GateW ; the first terminal of the third transistor T3 receives the data signal V DATA ; the second terminal of the third transistor T3 serves as the signal loading module
  • the second end of the driving transistor DTFT is connected to the first end of the driving transistor DTFT and the second end 2' of the lighting control module.
  • the illumination control module in this embodiment includes a fourth transistor T4 and a fifth transistor T5;
  • the gate of the fourth transistor T4 receives the light emission control signal Em;
  • the first end of the fourth transistor T4 receives the first voltage signal ELVDD, and is connected as the first end of the light emission control module to the storage capacitor CS a first end of the second transistor T2 as a first end of the signal loading module, and a second end of the fourth transistor T4 as a second end of the illumination control module a first end of the driving transistor DTFT and a second end of the third transistor T3 as a second end of the signal loading module;
  • the gate of the fifth transistor T5 receives the light emission control signal Em; the first end of the fifth transistor T5 serves as a third end of the light emission control module, connects the second end of the driving transistor DTFT and serves as the a second end of the first transistor T1 of the fourth end of the signal loading module; a second end of the fifth transistor T5 serves as a fourth end of the illumination control module, and outputs a driving voltage signal
  • the pixel circuit in this embodiment further includes a first voltage signal source, and an output end of the first voltage signal source is connected to a first end of the signal loading module and a first end of the light emitting control module, where The first voltage signal source is configured to output the first voltage signal to the signal loading module and the lighting control module.
  • the pixel circuit in this embodiment further includes a second voltage signal source, wherein: the driving transistor is an N-type transistor, and the first end of the organic light emitting diode OLED is connected to the fourth end of the light emitting control module; The second end of the organic light emitting diode OLED is connected to the second voltage signal source; the first voltage signal ELVDD is a high voltage signal, and the second voltage signal ELVSS output by the second voltage signal source is a low voltage signal.
  • the driving transistor is changed to a P-type transistor, and only the following changes can be made in the connection relationship as compared with the pixel circuit in which the driving transistor is an N-type transistor:
  • the first end of the organic light emitting diode OLED functions as an anode
  • the second end of the organic light emitting diode OLED functions as a cathode
  • the second voltage signal source when the driving transistor is an N-type transistor, the second voltage signal source outputs
  • the second voltage signal ELVSS is generally selected in the range of -5V to 0V, and is obtained according to actual debugging, and is used to provide a reference potential for each of the above components, for example, for connecting a neutral line, a ground line to provide a zero potential or providing a negative voltage, etc.
  • the first voltage signal ELVDD outputted by the first voltage signal source is a high voltage signal; and when the driving transistor is a P-type transistor, it is exactly the opposite.
  • the pixel circuit in this embodiment further includes a gate control signal source, and the gate of the first transistor T1 and the gate of the third transistor T3 in the signal loading module are connected to the gate control signal source of the current level;
  • the gate of the second transistor T2 in the signal loading module is connected to the upper gate control signal source, and the gate control signal source is used to output the gate control signal V gateW
  • the upper gate control signal source is used to output the upper gate control signal
  • the first-stage pixel circuit since it does not have the upper-level gate control signal source, it provides a starting signal source (the figure is illustrated by the intermediate-level pixel circuit structure, so the initial signal source is not shown)
  • the starting signal source is for outputting the start signal.
  • the pixel circuit in this embodiment further includes a light emission control signal source, and the light emission control signal source is connected to a gate of the fourth transistor T4 and a gate of the fifth transistor T5 in the light emission control module.
  • the illumination control signal source is for outputting the illumination control signal Em.
  • the pixel circuit of the embodiment of the present disclosure is coupled to a light-emitting operating power supply that supplies a first voltage signal source signal ELVDD and a second voltage signal source signal ELVSS to the pixel circuit.
  • the second voltage signal source signal ELVSS is generally selected in the range of -5V to 0V, and is obtained according to actual debugging, and is used to provide reference potentials for the above components, for example, for connecting the neutral line and the ground line to provide zero. Potential or provide a negative voltage.
  • Embodiments of the present disclosure also provide a thin film transistor backplane including the pixel circuit described above.
  • the pixel circuit and the thin film transistor backplane of the embodiments of the present disclosure can effectively eliminate the non-uniformity caused by the driving voltage of the driving transistor and the residual caused by the threshold voltage drift in the process of driving the organic light emitting diode. Shadow phenomenon; avoiding the problem of uneven brightness caused by different threshold voltages of driving transistors of different pixel units in the active matrix organic light emitting diode display device; improving the pixel circuit to the organic light emitting diode The driving effect further improves the quality of the active matrix organic light emitting diode display device.
  • the driving transistor is an N-type TFT transistor; the TFT shape of the N-type TFT transistor is enhanced (the threshold voltage is positive) or the depletion mode (the threshold voltage is negative); the first transistor, The second transistor, the third transistor, the fourth transistor, and the fifth transistor are also all N-type TFT transistors.
  • the driving transistor, the first transistor, the second transistor, the third transistor, The first ends of the fourth transistor and the fifth transistor and the second ends of the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor are respectively a drain and a source of each transistor; for example, When the first end of the driving transistor is a drain, the second end is a source.
  • each of the above transistors can be interchanged according to the direction of current passing through the transistor; in this embodiment, each transistor uses an N-type TFT transistor, and therefore, the current direction is From the drain to the source of the transistor; of course, since the various sources and drains used here are symmetrical, the source and drain are interchangeable. If the source is selected as the signal input, the drain acts as the signal output and vice versa.
  • the driving transistor may also be a P-type TFT transistor; the TFT shape of the P-type TFT transistor is enhanced (the threshold voltage is positive) or the depletion mode (the threshold voltage is negative);
  • the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor are all P-type TFT transistors.
  • the present disclosure also provides a driving method implemented by the pixel circuit described above, which is described in detail by taking the driving transistor as an N-type TFT transistor as an example.
  • FIG. 5, FIG. 6, and FIG. 7, (the dotted circuit shown in FIG. 4, FIG. 5, and FIG. 6 is a portion of the circuit that is not turned on; in FIG. 7, VGate) is the upper gate control signal Gate ( Nl) output potential waveform; ⁇ ⁇ ( ⁇ ) is the potential waveform outputted by the gate control signal Gate(n); V Em is the potential waveform output by the illumination control signal Em; tl is the reset phase; t2 is the storage phase; T3 is the illuminating phase.
  • the method is specifically described below in conjunction with FIG. 7:
  • the first end of the signal loading module is electrically connected to the third end of the signal loading module; and the first end of the signal loading module is controlled to receive the first voltage signal; Controlling a first end of the signal loading module and a third end of the signal loading module to respectively load a first voltage signal to a first end of the storage capacitor and a second end of the storage capacitor; Capacitor resetting the storage capacitor;
  • the upper gate control signal outputs a high potential, and at this time, the local gate control signal and the light emission control signal both output a low potential; the upper gate control signal turns on the second transistor, The first transistor, the third transistor, the fourth transistor, and the fifth transistor remain off; the first voltage signal source loads a first voltage signal V DD to a second end of the storage capacitor to cause the storage capacitor The second end is boosted to V DD ; thereby resetting the storage capacitor; and since the voltage of the second end of the storage capacitor is equal to the gate voltage of the driving transistor, the gate of the driving transistor The pole voltage is also V DD ; 2.
  • the first end of the signal loading module is disconnected from the third end of the signal loading module, and the signal loading module controls the voltage of the second end of the storage capacitor.
  • the driving transistor is turned on; the second end of the signal loading module controlling the storage capacitor is sequentially discharged to the signal via a third end of the signal loading module, a fourth end of the signal loading module, and the driving transistor Loading a second end of the module; at the same time, controlling the second end of the signal loading module to receive the data signal, and sequentially routing the data signal via the driving transistor, the fourth end of the signal loading module, and the a third end of the signal loading module is loaded to a second end of the storage capacitor and a gate of the driving transistor;
  • the local gate control signal is high, the illumination control signal and the upper gate control signal are low; the upper gate control signal turns off the second transistor; The first gate control signal turns on the first transistor and the third transistor; the fourth transistor and the fifth transistor remain off;
  • the first end of the storage capacitor is maintained at V DD , the second end of the storage capacitor turns on the driving transistor, and is discharged through the first transistor, the driving transistor, and the third transistor;
  • the data signal V DATA is loaded to the second end of the storage capacitor and the gate of the driving transistor through the third transistor, the driving transistor and the first transistor; causing the second end of the storage capacitor to be promoted to v DATA + ⁇ ⁇ ; where ⁇ ⁇ is the threshold voltage of the driving transistor, thereby causing the storage capacitor to collect and store the data signal V DATA and the threshold voltage v th of the driving transistor;
  • the voltage of the second end of the capacitor is equal to the gate voltage of the driving transistor. Therefore, the gate voltage of the driving transistor is also V DATA + ⁇ ⁇ ;
  • the second end of the storage capacitor continuously turns on the driving transistor, and loads the data signal to the driving transistor;
  • the first end of the illuminating control module receives the first voltage signal, and Loading a second end of the illumination control module and the driving transistor to a third end of the illumination control module; meanwhile, the driving transistor loads a data signal to a third end of the illumination control module;
  • the illumination control module controls a fourth end of the illumination control module to output a driving voltage signal.
  • the light emission control signal is high, the local gate control signal and the upper gate control signal are low; the upper gate control signal turns off the second transistor; The first gate control signal turns off the first transistor and the third transistor; the light emission control signal turns on the fourth transistor and the fifth transistor; and the first voltage signal source and the second voltage signal source Continuously conducting; at the same time, the stored charge at the second end of the storage capacitor is continuously turned on Transmitting a transistor to drive the organic light emitting diode connected to the fourth end of the light emitting control module to emit light.
  • the gate voltage of the driving transistor is maintained as V DATA + Vth
  • the first terminal voltage of the driving transistor is the first voltage signal V DD
  • the voltage of the second terminal of the driving transistor is V 0LED
  • V 0IjED is the voltage across the organic light emitting diode
  • loLED ⁇ K ⁇ [V DA T A + ⁇ th _ ⁇ OLED ⁇ ⁇ th ⁇
  • the driving transistor is always alternately operated between positive and negative bias states; specifically, the second terminal charge of the storage capacitor is in the storage phase via the second end of the driving transistor. Passing to the first end; in the illuminating phase, the driving current I0LED is transmitted to the second end via the first end of the driving transistor; by the alternately interchangeable working states of the first end and the second end, the effective reduction can be effectively The drift speed of the threshold voltage v th of the slow drive transistor.

Abstract

提供了一种像素电路，该像素电路包括：驱动晶体管(DTFT)、信号加载模块、发光控制模块和存储电容(CS)。该像素电路在对有机发光二极管(OLED)进行驱动的过程中，有效地消除驱动晶体管(DTFT)由自身阈值电压所造成的非均匀性和因阈值电压漂移造成的残影现象，避免了不同像素单元的有机发光二极管(OLED)之间因其驱动晶体管(DTFT)的阈值电压不同而造成的亮度不均的问题。还提供了一种上述像素电路的驱动方法以及包括上述像素电路的薄膜晶体管背板。

Description

像素电路及其驱动方法、 薄膜晶体管背板
技术领域
本公开涉及显示技术领域， 尤其涉及一种像素电路及其驱动方法、 薄膜 晶体管背板。
背景技术
有机发光二极管 （OLED， Organic Light-Emitting Diode )作为一种电流 型有机发光二极管已越来越多地被应用于高性能有源矩阵显示器件中。 传统 的无源矩阵有机发光二极管显示器件（Passive Matrix OLED ) 随着显示尺寸 的增大， 需要更短的单个像素的驱动时间， 因而需要增大瞬态电流， 增加功 耗。同时大电流的应用会造成纳米铟锡金属氧化物线上压降过大，并使 OLED 工作电压过高， 进而降低其效率。 而有源矩阵有机发光二极管显示器件 ( AMOLED, Active Matrix OLED )通过开关晶体管逐行扫描输入 OLED电 流， 可以很好地解决这些问题。
在 AMOLED的背板设计中，主要需要解决的问题是各 AMOLED像素单 元的补偿电路之间的亮度非均匀性。 AMOLED 釆用薄膜晶体管 （TFT， Thin-Film Transistor )构建像素电路为有机发光二极管提供相应的驱动电流。 现有技术中， 大多釆用低温多晶硅 TFT晶体管或氧化物 TFT晶体管。 与一般 的非晶硅 TFT晶体管相比， 低温多晶硅 TFT晶体管和氧化物 TFT晶体管具 有更高的迁移率和更稳定的特性， 更适合应用于 AMOLED显示中。 但是由 于晶化工艺的局限性， 在大面积玻璃基板上制作的低温多晶硅 TFT晶体管， 常常在诸如阔值电压、 迁移率等电学参数上具有非均匀性， 这种非均匀性会 转化为有机发光二极管的驱动电流差异和亮度差异， 并被人眼所感知， 即色 不均现象。
一般来说， 釆用氧化物的 TFT晶体管工艺技术所制作出来的有源矩阵有 机发光二极管， 其像素电路中的有机发光二极管的型态可以为 P型或 N型， 但无论是选择 P型还是 N型 TFT晶体管来实现像素电路，流经有机发光二极 管的电流不仅会随着有机发光二极管的导通电压经长时间应力的变化而改 变， 而且还会随着用以驱动有机发光二极管的 TFT晶体管的临限电压漂移而 有所不同。 如此一来， 将会连带影响到有机发光二极管显示器的亮度均匀性 与亮度恒定性。
因此， 为解决上述问题， 急需提供一种像素电路及其驱动方法、 薄膜晶 体管背板。
发明内容
本公开提供了一种像素电路及其驱动方法、 薄膜晶体管背板， 可以解决 现有技术的像素电路在驱动时发生驱动晶体管阔值电压漂移的问题。
根据本公开的一个方面， 提供了一种像素电路， 其包括驱动晶体管、 信 号加载模块、 发光控制模块和存储电容；
所述驱动晶体管的栅极与所述信号加载模块的第三端和所述存储电容 的第二端连接； 所述驱动晶体管的第一端与所述信号加载模块的第二端和所 述发光控制模块的第二端连接； 所述驱动晶体管的第二端与所述信号加载模 块的第四端和所述发光控制模块的第三端连接；
所述存储电容的第一端与所述信号加载模块的第一端和所述发光控制模 块的第一端连接；
所述信号加载模块的第五端接收数据信号；
所述发光控制模块的第一端和所述信号加载模块的第一端均接收第一电 压信号；
所述发光控制模块的第四端输出驱动电压信号。
可选地， 所述信号加载模块包括第一晶体管、 第二晶体管和第三晶体管； 所述第一晶体管的栅极接收本级栅控制信号； 所述第一晶体管的第一端 作为所述信号加载模块的第三端， 连接所述存储电容的第二端、 所述驱动晶 体管的栅极以及所述第二晶体管的第二端； 所述第一晶体管的第二端作为所 述信号加载模块的第四端， 连接所述驱动晶体管的第二端和所述发光控制模 块的第三端；
所述第二晶体管的栅极接收上一级栅控制信号或起始信号； 所述第二晶 体管的第一端接收第一电压信号， 并作为所述信号加载模块的第一端连接所 述存储电容的第一端和所述发光控制模块的第一端； 所述第二晶体管的第二 端作为所述信号加载模块的第三端， 连接所述第一晶体管的第一端、 所述存 储电容的第二端和所述驱动晶体管的栅极；
所述第三晶体管的栅极接收本级栅控制信号； 所述第三晶体管的第一端 接收数据信号； 所述第三晶体管的第二端作为所述信号加载模块的第二端， 连接所述驱动晶体管的第一端和所述发光控制模块的第二端。
可选地， 所述发光控制模块包括第四晶体管和第五晶体管；
所述第四晶体管的栅极接收发光控制信号； 所述第四晶体管的第一端接 收第一电压信号， 并作为所述发光控制模块的第一端连接所述存储电容的第 一端和所述信号加载模块的第一端； 所述第四晶体管的第二端作为所述发光 控制模块的第二端， 连接所述驱动晶体管的第一端和所述信号加载模块的第 二端；
所述第五晶体管的栅极接收发光控制信号； 所述第五晶体管的第一端作 为所述发光控制模块的第三端， 连接所述驱动晶体管的第二端和所述信号加 载模块的第四端；所述第五晶体管的第二端作为所述发光控制模块的第四端， 输出驱动电压信号。
可选地， 该像素电路还包括有机发光二极管， 所述有机发光二极管连接 所述发光控制模块的第四端， 所述有机发光二极管用于接收所述驱动电压信 号发光。
可选地， 该像素电路还包括第一电压信号源， 所述第一电压信号源的输 出端与所述信号加载模块的第一端和所述发光控制模块的第一端连接， 所述 第一电压信号源用于向所述信号加载模块和所述发光控制模块输出所述第一 电压信号。
可选地， 该像素电路还包括第二电压信号源， 其中： 所述驱动晶体管为 n型晶体管， 所述有机发光二极管的第一端连接所述发光控制模块的第四端； 所述有机发光二极管的第二端连接所述第二电压信号源； 所述第一电压信号 为高电压信号， 所述第二电压信号源为低电压信号源。
可选地， 该像素电路还包括第二电压信号源， 其中： 所述驱动晶体管为 p型晶体管， 所述有机发光二极管的第二端连接所述发光控制模块的第四端； 所述有机发光二极管的第一端连接所述第二电压信号源； 所述第一电压信号 为低电压信号， 所述第二电压信号源为高电压信号源。
可选地， 该像素电路还包括栅极控制信号源及起始信号源， 所述信号加 载模块中的所述第一晶体管的栅极和第三晶体管的栅极连接本级栅极控制信 号源； 所述信号加载模块中的所述第二晶体管的栅极连接上一级栅极控制信 号源或者起始信号源， 所述本级栅极控制信号源用于输出所述本级栅控制信 号， 所述上一级栅极控制信号源用于输出所述上一级栅控制信号， 所述起始 信号源用于输出所述起始信号。
可选地， 该像素电路还包括发光控制信号源， 所述发光控制信号源连接 所述发光控制模块中的所述第四晶体管的栅极和所述第五晶体管的栅极， 所 述发光控制信号源用于输出所述发光控制信号。
根据本公开的另一个方面， 提供了一种用于如上所述的像素电路的驱动 方法， 所述方法包括：
在复位阶段， 控制所述信号加载模块的第一端接收第一电压信号； 并控 制所述信号加载模块的第三端将第一电压信号加载至所述存储电容的第二 端； 以此对所述存储电容进行电容复位；
在储存阶段， 所述存储电容的第二端开启所述驱动晶体管； 所述存储电 容的第二端经由所述信号加载模块的第三端、 所述信号加载模块的第四端和 所述驱动晶体管放电至所述信号加载模块的第二端； 所述信号加载模块的第 二端接收所述数据信号， 并将所述数据信号经由所述驱动晶体管、 所述信号 加载模块的第四端和所述信号加载模块的第三端加载至所述存储电容的第二 端；
在发光阶段， 所述存储电容的第二端持续导通驱动晶体管， 并将数据信 号加载至驱动晶体管； 所述发光控制模块的第一端接收第一电压信号， 并通 过所述发光控制模块的第二端和所述驱动晶体管加载至所述发光控制模块的 第三端； 所述驱动晶体管将数据信号加载至所述发光控制模块的第三端； 并 由所述发光控制模块的第四端输出驱动电压信号。
根据本公开的一个方面， 提供了一种薄膜晶体管背板， 包括上述的像素 电路。
本公开的像素电路， 可以在对有机发光二极管进行驱动的过程中， 有效 地消除驱动晶体管由自身阔值电压所造成的非均勾性和因阀值电压漂移造成 的残影现象； 避免了有源矩阵有机发光二极管显示器件中不同像素单元的有 机发光二极管之间因其驱动晶体管的阀值电压不同而造成的显示亮度不均的 问题； 提高了像素电路对有机发光二极管的驱动效果， 进一步提高了有源矩 阵有机发光二极管显示器件的品质。
附图说明 以下结合附图和实施例对本公开作进一步说明。
图 1为本公开实施例中所述像素电路的电路连接示意图；
图 2为本公开实施例中所述像素电路的电路连接示意图；
图 3为本公开实施例中所述像素电路的电路连接示意图；
图 4为本公开实施例所述像素电路在复位阶段时的电路连接示意图; 图 5为本公开实施例所述像素电路在储存阶段时的电路连接示意图; 图 6为本公开实施例所述像素电路在发光阶段时的电路连接示意图; 图 7为本公开实施例中所述驱动方法的时序控制示意图。
具体实施方式
下面将结合本发明实施例中的附图， 对本发明实施例中的技术方案进行 清楚、 完整地描述， 显然， 所描述的实施例仅仅是本发明一部分实施例， 而 不是全部的实施例。 基于本发明中的实施例， 本领域普通技术人员在没有做 出创造性劳动前提下所获得的所有其他实施例， 都属于本发明保护的范围。
参见图 1 (图 1 中 1、 2、 3、 4、 5分别表示信号加载模块的第一端、 第 二端、 第三端、 第四端和第五端； 1'、 2\ 3'、 4'分别表示发光控制模块的第 一端、 第二端、 第三端和第四端） 所示， 本公开实施例的所述像素电路， 主 要用于有源矩阵有机发光二极管显示器件中各有机发光二极管的驱动补偿， 每个有机发光二极管由一个像素电路驱动补偿， 每一个像素电路包括： 驱动 晶体管 DTFT、 信号加载模块、 发光控制模块和存储电容 Cs;
所述驱动晶体管 DTFT的栅极与所述信号加载模块的第三端 3和所述存 储电容 Cs的第二端连接；所述驱动晶体管 DTFT的第一端（即如图所示 DTFT 的上端， 源极）与所述信号加载模块的第二端 2和所述发光控制模块的第二 端 2'连接； 所述驱动晶体管 DTFT的第二端 （即如图所示 DTFT的下端， 漏 极）与所述信号加载模块的第四端 4和所述发光控制模块的第三端 3'连接； 所述存储电容 Cs的第一端与所述信号加载模块的第一端 1和所述发光控 制模块的第一端 Γ连接；
所述信号加载模块的第五端 5接收数据信号 VDATA;
所述发光控制模块的第一端 Γ和所述信号加载模块的第一端 Γ均接收第 一电压信号 ELVDD;
所述发光控制模块的第四端 4'输出驱动电压信号 Vgs。 本实施例中的所述像素电路还包括有机发光二极管 OLED， 所述有机发 光二极管 OLED 连接所述发光控制模块的第四端 4'， 所述有机发光二极管 OLED用于接收所述驱动电压信号 Vgs发光。
在本实施例的像素电路中， 所述信号加载模块接收数据信号 VDATA，将数 据信号 VDATA加载至所述存储电容 Cs的第二端和所述驱动晶体管 DTFT的栅 极； 使所述存储电容 Cs的第二端被提升为 VDATA+Vth; 其中， Vth为驱动晶体 管的阀值电压， 以此使所述存储电容对数据信号 VDATA和驱动晶体管的阀值 电压 Vth进行釆集和储存；又由于所述存储电容的第二端的电压与所述驱动晶 体管的栅极电压等同， 因此， 所述驱动晶体管的栅极电压也为 vDATA+ νΛ， 并 在存储电容的作用下所述驱动晶体管的栅极电压持续保持为 VDATA+ Vth;
所述发光控制模块接收第一电压信号 ELVDD， 使所述驱动晶体管 DTFT 的第一端电压为第一电压信号 VDD, 所述驱动晶体管 DTFT 的第二端电压为
VOLED; 其中， V0IJED为有机发光二极管 OLED两端的电压； 驱动晶体管的驱 动电压信号 Vgs计算公式为： Vgs=VDATA+ Vth-VoLED;
关于经过所述驱动晶体管输入至所述有机发光二极管 OLED的驱动电流 公式为
IoLED = - K - [Vgs - V 其中， K为关联于驱动晶体管的电流常数，
将 Vgs代入驱动电流 I0IjED公式可知，使经过所述驱动晶体管输出至所述 有机发光二极管的驱动电流 I0IjED为： loLED = ^K · [VDA TA + ^th _ ^OLED ~ ^th \
_ 1 2
- · WDATA _ ^OLED ] ；
通过以上演算可知， 经过所述驱动晶体管的驱动电流 I0LED只与 VDATA和
VOLED有关， 而与驱动晶体管的阔值电压 VTH无关； 且 V0IJED在有机发光二极 管长时间使用后也会趋向于一个常数。 因此， 即使 νΛ小于 0也可以进行很好 的补偿， 基本消除了阔值电压非均匀性、 漂移的影响。 釆用本公开实施例所 述的像素电路， 无论对于增强型还是耗尽型的薄膜晶体管 （TFT )作为驱动 晶体管， 都可以补偿阔值电压的非均匀性的影响， 从而可以很好的补偿有机 发光二极管的亮度不均勾性， 因此适用性更广。 相比较传统的像素结构， 上述结构可以有效地解决增强型或耗尽型驱动 晶体管的阔值电压漂移、 非均勾性以及有机发光二极管电压非均勾性和老化 的问题。
本公开的像素电路， 可以在对有机发光二极管进行驱动的过程中， 有效 地消除驱动晶体管由自身阔值电压所造成的非均勾性和因阀值电压漂移造成 的残影现象； 避免了有源矩阵有机发光二极管显示器件中不同像素单元的有 机发光二极管之间因其驱动晶体管的阀值电压不同而造成的显示亮度不均的 问题； 提高了像素电路对有机发光二极管的驱动效果， 进一步提高了有源矩 阵有机发光二极管显示器件的品质。
参见图 2 (图 2中 1'、 2\ 3'、 4'分别表示发光控制模块的第一端、 第二 端、 第三端和第四端） 所示， 本实施例中所述信号加载模块包括第一晶体管 Tl、 第二晶体管 Τ2和第三晶体管 Τ3;
所述第一晶体管 T1的栅极接收本级栅控制信号 V^t^);所述第一晶体管 的第一端作为所述信号加载模块的第三端， 连接所述存储电容 Cs的第二端、 所述驱动晶体管 DTFT的栅极以及所述第二晶体管 T2的第二端；所述第一晶 体管 T1 的第二端作为所述信号加载模块的第四端， 连接所述驱动晶体管 DTFT的第二端和所述发光控制模块的第三端 3'；
所述第二晶体管 T2的栅极接收上一级栅控制信号 其中对于第 一级的像素电路， 由于没有其上一级的栅控制信号， 因此为其提供一起始信 号， 该起始信号与所述上一级栅控制信号的作用相同， 其时序也与其他级像 素电路接收的上一级栅控制信号相同；所述第二晶体管 T2的第一端接收第一 电压信号 ELVDD， 并作为所述信号加载模块的第一端连接所述存储电容 Cs 的第一端和所述发光控制模块的第一端 Γ ;所述第二晶体管 T2的第二端作为 所述信号加载模块的第三端， 连接所述第一晶体管 T1的第一端、所述存储电 容 Cs的第二端和所述驱动晶体管 DTFT的栅极；
所述第三晶体管 T3的栅极接收本级栅控制信号 VGateW;所述第三晶体管 T3的第一端接收数据信号 VDATA;所述第三晶体管 T3的第二端作为所述信号 加载模块的第二端， 连接所述驱动晶体管 DTFT的第一端和所述发光控制模 块的第二端 2'。
参见图 3所示，本实施例中所述发光控制模块包括第四晶体管 T4和第五 晶体管 T5; 所述第四晶体管 T4的栅极接收发光控制信号 Em; 所述第四晶体 T4管 的第一端接收第一电压信号 ELVDD，并作为所述发光控制模块的第一端连接 所述存储电容 CS 的第一端和作为所述信号加载模块的第一端的所述第二晶 体管 T2的第一端； 所述第四晶体管 T4的第二端作为所述发光控制模块的第 二端， 连接所述驱动晶体管 DTFT的第一端和作为所述信号加载模块的第二 端的所述第三晶体管 T3的第二端；
所述第五晶体管 T5的栅极接收发光控制信号 Em; 所述第五晶体管 T5 的第一端作为所述发光控制模块的第三端， 连接所述驱动晶体管 DTFT的第 二端和作为所述信号加载模块的第四端的所述第一晶体管 T1的第二端；所述 第五晶体管 T5的第二端作为所述发光控制模块的第四端，输出驱动电压信号
Vgs。
本实施例中的所述像素电路还包括第一电压信号源， 所述第一电压信号 源的输出端与所述信号加载模块的第一端和所述发光控制模块的第一端连 接， 所述第一电压信号源用于向所述信号加载模块和所述发光控制模块输出 所述第一电压信号。
本实施例中的所述像素电路还包括第二电压信号源， 其中： 所述驱动晶 体管为 N型晶体管， 所述有机发光二极管 OLED的第一端连接所述发光控制 模块的第四端； 所述有机发光二极管 OLED的第二端连接所述第二电压信号 源； 所述第一电压信号 ELVDD为高电压信号， 所述第二电压信号源所输出 的第二电压信号 ELVSS为低电压信号。
当然， 根据上述的方案很容易想到将所述驱动晶体管改为 P型晶体管， 其与驱动晶体管为 N型晶体管的像素电路相比， 在连接关系上仅作以下改变 即可：
将所述有机发光二极管 OLED 的第二端连接所述发光控制模块的第四 端； 所述有机发光二极管 OLED的第一端连接所述第二电压信号源； 所述第 一电压信号为低电压信号， 所述第二电压信号源所输出的第二电压信号为高 电压信号源。 其像素电路中其他结构和连接关系与上述实施例相同， 不再赘 述。
本实施例中所述有机发光二极管 OLED的第一端作为阳极， 所述有机发 光二极管 OLED的第二端作为阴极。
本实施例中当驱动晶体管为 N型晶体管时， 所述第二电压信号源输出的 所述第二电压信号 ELVSS—般在 -5V到 0V范围内选取，根据实际调试得到， 用以为上述各元件提供参考电位， 例如用于连接零线、 地线以提供零电位或 提供负电压等； 相应的所述第一电压信号源输出的第一电压信号 ELVDD 为 高电压信号； 而当驱动晶体管为 P型晶体管时， 则正好与之相反。
本实施例中的所述像素电路还包括栅极控制信号源， 所述信号加载模块 中的所述第一晶体管 T1的栅极和第三晶体管 T3的栅极连接本级栅极控制信 号源；所述信号加载模块中的所述第二晶体管 T2的栅极连接上一级栅极控制 信号源， 所述本级栅极控制信号源用于输出所述本级栅控制信号 VgateW， 所 述上一级栅极控制信号源用于输出所述上一级栅控制信号
Figure imgf000010_0001
对于第一 级像素电路， 由于其不具有上一级栅极控制信号源， 为其提供一起始信号源 (图中均以中间级的像素电路结构进行示意， 因此起始信号源未示出）， 所述 起始信号源用于输出所述起始信号。
本实施例中的所述像素电路还包括发光控制信号源， 所述发光控制信号 源连接所述发光控制模块中的所述第四晶体管 T4 的栅极和所述第五晶体管 T5的栅极， 所述发光控制信号源用于输出所述发光控制信号 Em。
本公开实施例的所述像素电路连接在发光工作电源上， 该发光工作电源 为像素电路提供第一电压信号源信号 ELVDD和第二电压信号源信号 ELVSS。 本实施例中所述第二电压信号源信号 ELVSS—般在 -5V到 0V范围内选取， 根据实际调试得到， 用以为上述各元件提供参考电位， 例如用于连接零线、 地线以提供零电位或提供负电压等。
本公开实施例还提供一种薄膜晶体管背板， 包括上述的像素电路。
本公开实施例的像素电路和薄膜晶体管背板， 可以在对有机发光二极管 进行驱动的过程中， 有效地消除驱动晶体管由自身阔值电压所造成的非均匀 性和因阀值电压漂移造成的残影现象； 避免了有源矩阵有机发光二极管显示 器件中不同像素单元的有机发光二极管之间因其驱动晶体管的阀值电压不同 而造成的亮度不均的问题； 提高了像素电路对有机发光二极管的驱动效果， 进一步提高了有源矩阵有机发光二极管显示器件的品质。
本实施例中所述驱动晶体管为 N型 TFT晶体管； 该 N型 TFT晶体管的 TFT形态为增强型（阀值电压为正）或耗尽型（阀值电压为负）； 所述第一晶 体管、 第二晶体管、 第三晶体管、 第四晶体管、 第五晶体管也均为 N型 TFT 晶体管。 其中， 所述驱动晶体管、 第一晶体管、 第二晶体管、 第三晶体管、 第四晶体管和第五晶体管的第一端与所述第一晶体管、 第二晶体管、 第三晶 体管、 第四晶体管和第五晶体管的第二端分别为各晶体管的漏、 源极； 举例 说明， 当所述驱动晶体管的第一端为漏极时， 则第二端为源极。 上述各晶体 管的漏极和源极（第一端和第二端）可根据经过该晶体管的电流方向进行互 换； 在本实施例中各晶体管均釆用 N型 TFT晶体管， 因此， 电流方向是从晶 体管的漏极到源极； 当然， 由于这里釆用的各个源极、 漏极是对称的， 所以 其源极、 漏极是可以互换的。 若选取源极作为信号输入端、 则漏极作为信号 输出端， 反之亦然。
同理， 本实施例中所述驱动晶体管也可以为 P型 TFT晶体管； 该 P型 TFT晶体管的 TFT形态为增强型（阀值电压为正）或耗尽型（阀值电压为负）； 所述第一晶体管、 第二晶体管、 第三晶体管、 第四晶体管、 第五晶体管均为 P型 TFT晶体管。
本公开还提供一种根据上述中所述的像素电路实现的驱动方法， 该驱动 方法以所述驱动晶体管为 N型 TFT晶体管为例， 进行详细说明。
参见图 4、 图 5、 图 6、 图 7所示， （图 4、 图 5、 图 6中虚线所示为未开 启的部分电路； 图 7中， VGate )为上一级栅控制信号 Gate(n-l)输出的电位波 形； ν^ε(η)为本级栅控制信号 Gate(n)输出的电位波形； VEm为发光控制信号 Em输出的电位波形； tl为复位阶段； t2为储存阶段； t3为发光阶段。） 以下 结合图 7对所述方法进行具体说明：
1、 参见图 4所示， 复位阶段， 所述信号加载模块的第一端与所述信号加 载模块的第三端导通； 控制所述信号加载模块的第一端接收第一电压信号； 并控制所述信号加载模块的第一端和所述信号加载模块的第三端将第一电压 信号分别加载至所述存储电容的第一端和所述存储电容的第二端； 以此对所 述存储电容进行电容复位；
具体地说， 所述上一级栅控制信号输出高电位， 此时， 所述本级栅控制 信号和发光控制信号均输出低电位； 所述上一级栅控制信号开启所述第二晶 体管， 所述第一晶体管、 第三晶体管、 第四晶体管和第五晶体管保持关闭； 所述第一电压信号源将第一电压信号 VDD加载至所述存储电容的第二 端， 使所述存储电容的第二端被提升为 VDD; 以此对所述存储电容进行电容 复位； 又由于所述存储电容的第二端的电压与所述驱动晶体管的栅极电压等 同， 因此所述驱动晶体管的栅极电压也为 VDD; 2、 参见图 5所示， 储存阶段， 所述信号加载模块的第一端与所述信号加 载模块的第三端断开， 所述信号加载模块控制所述存储电容的第二端的电压 使得所述驱动晶体管开启； 所述信号加载模块控制所述存储电容的第二端依 次经由所述信号加载模块的第三端、 所述信号加载模块的第四端和所述驱动 晶体管放电至所述信号加载模块的第二端； 同时， 控制所述信号加载模块的 第二端接收所述数据信号， 并将所述数据信号依次经由所述驱动晶体管、 所 述信号加载模块的第四端和所述信号加载模块的第三端加载至所述存储电容 的第二端和所述驱动晶体管的栅极；
具体地说， 所述本级栅控制信号为高电位， 所述发光控制信号以及所述 上一级栅控制信号为低电位； 所述上一级栅控制信号关闭所述第二晶体管； 所述本级栅控制信号开启所述第一晶体管和所述第三晶体管； 所述第四晶体 管和第五晶体管保持关闭；
所述存储电容的第一端保持为 VDD， 所述存储电容的第二端开启所述驱 动晶体管， 并经由所述第一晶体管、 驱动晶体管和第三晶体管放电；
所述数据信号 VDATA通过所述第三晶体管、 驱动晶体管和第一晶体管加 载至所述存储电容的第二端和所述驱动晶体管的栅极； 使所述存储电容的第 二端被提升为 vDATA+ νΛ; 其中， νΛ为驱动晶体管的阀值电压， 以此使所述 存储电容对数据信号 VDATA和驱动晶体管的阀值电压 vth进行釆集和储存； 又 由于所述存储电容的第二端的电压与所述驱动晶体管的栅极电压等同， 因此， 所述驱动晶体管的栅极电压也为 VDATA+ νΛ;
3、 参见图 6所示， 发光阶段， 所述存储电容的第二端持续导通驱动晶体 管， 并将数据信号加载至驱动晶体管； 所述发光控制模块的第一端接收第一 电压信号， 并通过所述发光控制模块的第二端和所述驱动晶体管加载至所述 发光控制模块的第三端； 同时， 所述驱动晶体管将数据信号加载至所述发光 控制模块的第三端； 并由所述发光控制模块控制所述发光控制模块的第四端 输出驱动电压信号。
具体地说， 所述发光控制信号为高电位， 所述本级栅控制信号以及所述 上一级栅控制信号为低电位； 所述上一级栅控制信号关闭所述第二晶体管； 所述本级栅控制信号关闭所述第一晶体管和所述第三晶体管； 所述发光控制 信号开启所述第四晶体管和第五晶体管； 使所述第一电压信号源与所述第二 电压信号源持续导通； 同时， 所述存储电容的第二端储存的电荷持续导通驱 动晶体管， 以此驱动连接在所述发光控制模块的第四端上的所述有机发光二 极管发光。
此时， 所述驱动晶体管的栅极电压保持为 VDATA+ Vth， 所述驱动晶体管的 第一端电压为第一电压信号 VDD, 所述驱动晶体管的第二端电压为 V0LED; 其 中， V0IjED为有机发光二极管两端的电压； 驱动晶体管的驱动电压信号 Vgs 计算公式为： Vgs=VDATA+ Vth-V0IjED;
关于经过所述驱动晶体管输入至所述有机发光二极管 OLED的驱动电流 公式为 i0LED = \ - K - [vgs - v 其中， K为关联于驱动晶体管的电流常数，
将 Vgs代入驱动电流 I0LED公式可知，使经过所述驱动晶体管输入至所述 有机发光二极管的驱动电流 I0IjED为：
_ 1 2
loLED = ~^K · [VDA TA +^th _ ^OLED ~ ^th \
_ 1 2
= ~^K · WDATA _ ^OLED ]
由上述驱动方法的过程可知， 所述驱动晶体管始终在正、 负偏置状态之 间交替工作； 具体地是指， 在储存阶段中所述存储电容的第二端电荷经由驱 动晶体管的第二端传递至第一端； 而在发光阶段中驱动电流 I0LED则经由驱动 晶体管的第一端传递至第二端； 通过这种第一端和第二端的工作状态交替互 换的形式， 可有效减緩驱动晶体管的阀值电压 vth的漂移速度。
以上所述， 仅为本发明的具体实施方式， 但本发明的保护范围并不局限 于此， 任何熟悉本技术领域的技术人员在本公开的技术范围内， 可轻易想到 变化或替换， 都应涵盖在本发明的保护范围之内。 因此， 本发明的保护范围 应以所述权利要求的保护范围为准。
本申请要求于 201 3年 10月 9日递交的中国专利申请第 201 310468312. 0 号的优先权， 在此全文引用上述中国专利申请公开的内容以作为本申请的一 部分。

Claims

权 利 要 求 书
1、 一种像素电路， 包括驱动晶体管、 信号加载模块、 发光控制 模块和存储电容；
所述驱动晶体管的栅极与所述信号加载模块的第三端和所述存 储电容的第二端连接； 所述驱动晶体管的第一端与所述信号加载模块 的第二端和所述发光控制模块的第二端连接； 所述驱动晶体管的第二 端与所述信号加载模块的第四端和所述发光控制模块的第三端连接； 所述存储电容的第一端与所述信号加载模块的第一端和所述发光 控制模块的第一端连接；
所述信号加载模块的第五端接收数据信号；
所述发光控制模块的第一端和所述信号加载模块的第一端均接收 第一电压信号；
所述发光控制模块的第四端输出驱动电压信号。
2、 根据权利要求 1所述的像素电路， 其中， 所述信号加载模块包 括第一晶体管、 第二晶体管和第三晶体管；
所述第一晶体管的栅极接收本级栅控制信号； 所述第一晶体管的 第一端作为所述信号加载模块的第三端， 连接所述存储电容的第二端、 所述驱动晶体管的栅极以及所述第二晶体管的第二端； 所述第一晶体 管的第二端作为所述信号加载模块的第四端， 连接所述驱动晶体管的 第二端和所述发光控制模块的第三端；
所述第二晶体管的栅极接收上一级栅控制信号或起始信号； 所述 第二晶体管的第一端接收第一电压信号， 并作为所述信号加载模块的 第一端连接所述存储电容的第一端和所述发光控制模块的第一端； 所 述第二晶体管的第二端作为所述信号加载模块的第三端， 连接所述第 一晶体管的第一端、 所述存储电容的第二端和所述驱动晶体管的栅极； 所述第三晶体管的栅极接收本级栅控制信号； 所述第三晶体管的 第一端接收数据信号； 所述第三晶体管的第二端作为所述信号加载模 块的第二端， 连接所述驱动晶体管的第一端和所述发光控制模块的第 二端。
3、 根据权利要求 1或 2所述的像素电路， 其中， 所述发光控制模 块包括第四晶体管和第五晶体管；
所述第四晶体管的栅极接收发光控制信号； 所述第四晶体管的第 一端接收第一电压信号， 并作为所述发光控制模块的第一端连接所述 存储电容的第一端和所述信号加载模块的第一端； 所述第四晶体管的 第二端作为所述发光控制模块的第二端， 连接所述驱动晶体管的第一 端和所述信号加载模块的第二端；
所述第五晶体管的栅极接收发光控制信号； 所述第五晶体管的第 一端作为所述发光控制模块的第三端， 连接所述驱动晶体管的第二端 和所述信号加载模块的第四端； 所述第五晶体管的第二端作为所述发 光控制模块的第四端， 输出驱动电压信号。
4、 根据权利要求 1-3任一项所述的像素电路， 还包括有机发光二 极管， 所述有机发光二极管连接所述发光控制模块的第四端， 所述有 机发光二极管用于接收所述驱动电压信号发光。
5、 根据权利要求 4所述的像素电路， 还包括第一电压信号源， 所 述第一电压信号源的输出端与所述信号加载模块的第一端和所述发光 控制模块的第一端连接， 所述第一电压信号源用于向所述信号加载模 块和所述发光控制模块输出所述第一电压信号。
6、 根据权利要求 5所述的像素电路， 还包括第二电压信号源， 其 中： 所述驱动晶体管为 n型晶体管， 所述有机发光二极管的第一端连 接所述发光控制模块的第四端； 所述有机发光二极管的第二端连接所 述第二电压信号源； 所述第一电压信号源为高电压信号源， 所述第二 电压信号源为低电压信号源。
7、 根据权利要求 5所述的像素电路， 还包括第二电压信号源， 其 中： 所述驱动晶体管为 p型晶体管， 所述有机发光二极管的第二端连 接所述发光控制模块的第四端； 所述有机发光二极管的第一端连接所 述第二电压信号源； 所述第一电压信号源为低电压信号源， 所述第二 电压信号源为高电压信号源。
8、 根据权利要求 2所述的像素电路， 还包括栅极控制信号源及起 始信号源， 所述信号加载模块中的所述第一晶体管的栅极和第三晶体 管的栅极连接本级栅极控制信号源； 所述信号加载模块中的所述第二 晶体管的栅极连接上一级栅极控制信号源或者起始信号源， 所述本级 栅极控制信号源用于输出所述本级栅控制信号， 所述上一级栅极控制 信号源用于输出所述上一级栅控制信号， 所述起始信号源用于输出所 述起始信号。
9、 根据权利要求 3所述的像素电路， 还包括发光控制信号源， 所 述发光控制信号源连接所述发光控制模块中的所述第四晶体管的栅极 和所述第五晶体管的栅极， 所述发光控制信号源用于输出所述发光控 制信号。
10、一种如权利要求 1-9任一项所述的像素电路的驱动方法，包括： 在复位阶段， 控制所述信号加载模块的第一端接收第一电压信号； 并控制所述信号加载模块的第三端将第一电压信号加载至所述存储电 容的第二端； 以此对所述存储电容进行电容复位；
在储存阶段， 所述存储电容的第二端开启所述驱动晶体管； 所述 存储电容的第二端经由所述信号加载模块的第三端、 所述信号加载模 块的第四端和所述驱动晶体管放电至所述信号加载模块的第二端； 所 述信号加载模块的第二端接收所述数据信号， 并将所述数据信号经由 所述驱动晶体管、 所述信号加载模块的第四端和所述信号加载模块的 第三端加载至所述存储电容的第二端；
在发光阶段， 所述存储电容的第二端持续导通驱动晶体管， 并将 数据信号加载至驱动晶体管； 所述发光控制模块的第一端接收第一电 压信号， 并通过所述发光控制模块的第二端和所述驱动晶体管加载至 所述发光控制模块的第三端； 所述驱动晶体管将数据信号加载至所述 发光控制模块的第三端； 并由所述发光控制模块的第四端输出驱动电 压信号。
11、 一种薄膜晶体管背板， 包括如权利要求 1-9所述的像素电路。
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