WO2015050218A1 - 研磨物の製造方法 - Google Patents

研磨物の製造方法 Download PDF

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Publication number
WO2015050218A1
WO2015050218A1 PCT/JP2014/076433 JP2014076433W WO2015050218A1 WO 2015050218 A1 WO2015050218 A1 WO 2015050218A1 JP 2014076433 W JP2014076433 W JP 2014076433W WO 2015050218 A1 WO2015050218 A1 WO 2015050218A1
Authority
WO
WIPO (PCT)
Prior art keywords
grinding
polished
polishing
abrasive
rotated
Prior art date
Application number
PCT/JP2014/076433
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
和正 北村
智毅 長江
Original Assignee
日本碍子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本碍子株式会社 filed Critical 日本碍子株式会社
Priority to JP2015540554A priority Critical patent/JPWO2015050218A1/ja
Priority to KR1020157014045A priority patent/KR20150073214A/ko
Priority to CN201480003235.4A priority patent/CN104822491A/zh
Publication of WO2015050218A1 publication Critical patent/WO2015050218A1/ja
Priority to US14/722,222 priority patent/US20150266155A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping

Definitions

  • the present invention relates to a method for producing an abrasive.
  • a base metal is provided, and the balance wall is the outer peripheral portion of the base metal and protrudes in the opposite direction from the surface opposite to the surface from which the annular outer peripheral wall protrudes.
  • a method in which the front and back surfaces of a semiconductor substrate are ground with a grindstone for surface grinding so that the semiconductor substrate has a desired thickness for example, see Patent Document 1). According to this, even if driven at high speed, the deformation of the base metal is suppressed, and it is possible to provide a grinding wheel for surface grinding that maintains grinding quality and grinding accuracy.
  • a grinding process is performed at a high rotation speed of 1500 rpm to 10000 rpm for as short a time as possible, and a process for further increasing the smoothness is performed by the subsequent polishing process.
  • strain, an altered layer, microcracks, and the like are generated on the surface, and the obtained substrate has a rough surface. This can be dealt with by removing strains, altered layers, microcracks, and the like in a subsequent polishing step.
  • the polishing process is very time consuming, and there is a problem that the processing time until the grinding and polishing process is completed is long.
  • This invention is made in view of such a subject, and it aims at providing the manufacturing method of the abrasive
  • the present inventors can improve the processing quality of the grinding process by considering the processing time in total and reviewing the processing of the grinding process, As a result, it has been found that the processing time of the grinding and polishing steps can be further shortened, and the present invention has been completed.
  • the method for producing a polished article according to the present invention is a method for producing a polished article by treating the polished article, and a grinding step of grinding the surface of the polished article with a grindstone rotated at a peripheral speed of 10 m / s or less. , Including.
  • the method for producing a polished article of the present invention can further improve the processing quality of the grinding process, and can further reduce the processing time of the grinding and polishing processes. This is because the generation of strain, deteriorated layers, microcracks, and the like caused by processing can be further suppressed by performing a lower-speed grinding process that has not been conventionally performed in the grinding process. As a result, although the processing time in the grinding process becomes longer, the time required for the polishing process after the grinding process can be greatly shortened, and the processing time in the grinding and polishing process can be shortened.
  • the flowchart which shows an example of a board
  • the block diagram which shows the outline of an example of a structure of the grinding apparatus 10 of this embodiment.
  • 1 is a configuration diagram illustrating an outline of an example of a configuration of a CMP apparatus 30 according to an embodiment. The surface image after grinding of Example 1 and Comparative Example 1.
  • FIG. 1 is a flowchart showing an example of a substrate processing process according to an embodiment of the present invention.
  • FIG. 2 is a configuration diagram showing an outline of an example of the configuration of the grinding apparatus 10 of the present embodiment.
  • FIG. 3 is a configuration diagram showing an outline of an example of the configuration of the lapping apparatus 20 of the present embodiment.
  • FIG. 4 is a configuration diagram illustrating an outline of an example of a configuration of a CMP (chemical mechanical polishing) apparatus 30 according to the present embodiment.
  • CMP chemical mechanical polishing
  • a cutting process for cutting a cylindrical ingot to obtain a disk-shaped object to be polished (step S100), a grinding process for grinding the object to be polished obtained by cutting, (Step S110), a lapping process (Step S120) for polishing the ground object to be polished, a CMP process for polishing by further adding chemical treatment (Step S130), and a cleaning process for performing surface cleaning (Step S140)
  • a grinding process, a lapping process, and a CMP process will be mainly described. Note that the lapping step, the CMP step, and the like may be omitted as appropriate, and other steps such as a polishing step may be added as appropriate.
  • the object to be polished 18 includes, for example, various semiconductor wafers, single crystal wafers, etc., such as silicon, silicon oxide, alumina, sapphire, silicon carbide, gallium nitride, gallium phosphate, gallium arsenide, indium phosphide, lithium niobate. And compound semiconductors such as lithium tantalate.
  • various semiconductor wafers such as silicon, silicon oxide, alumina, sapphire, silicon carbide, gallium nitride, gallium phosphate, gallium arsenide, indium phosphide, lithium niobate.
  • compound semiconductors such as lithium tantalate.
  • the grinding apparatus 10 includes a controller 11 that controls the entire apparatus, a grinding motor 14, a base 15 that is rotated by the grinding motor 14, and a grinding wheel 16 that is fixed to the base 15.
  • the grinding mechanism 12 of the grinding apparatus 10 performs an in-feed process in which the grinding wheel 16 is rotated about the axis, and the workpiece 18 fixed to a fixed plate (not shown) is rotated about the axis, and the workpiece 18 is ground by the grinding wheel 16. It is configured as a mechanism to execute.
  • the grinding apparatus 10 includes a grinding motor 14 that can output a sufficient torque when the grinding wheel 16 rotates in a low speed rotation range, for example, a rotation range of 10 rpm or more and less than 2000 rpm.
  • the controller 11 drives and controls the grinding motor 14 so as to rotate at a predetermined rotational speed.
  • the surface 19 of the workpiece 18 is ground by the grinding wheel 16 rotated at a peripheral speed of 10 m / s or less. In this way, the processing quality of the grinding process can be further improved, and as a result, the processing time of the grinding and polishing processes can be further shortened.
  • this grinding step it is preferable to grind the surface 19 of the workpiece 18 with the grinding wheel 16 rotated at a peripheral speed of 0.5 m / s or more. By doing so, it is possible to further suppress the lengthening of the time in the grinding process and to further shorten the processing time of the grinding and polishing processes.
  • the rotational speed of the grinding wheel 16 is preferably 1000 rpm or less, and preferably 800 rpm or less.
  • the cutting amount in the grinding step can be appropriately set according to the peripheral speed of the grinding wheel 16, and is preferably in the range of 0.1 to 50 ⁇ m / min, more preferably in the range of 0.5 to 40 ⁇ m / min, A range of 1 to 30 ⁇ m / min is more preferable.
  • the abrasive cutting depth is generally made smaller than the critical cutting depth Dc value.
  • This critical cutting depth Dc value refers to the amount of cutting at the point where the deformation process transitions from brittle to ductile when performing ductile mode processing of a hard and brittle material.
  • the abrasive grain cutting depth is inversely proportional to the circumferential speed (ie, rotational speed) of the grindstone, and it is necessary to increase the circumferential speed of the grindstone in order to reduce the abrasive grain cutting depth.
  • the peripheral speed of the grindstone is increased, the load on the abrasive grains decreases, and the abrasive grains tend to wear out.
  • abrasive wear of abrasive grains is small and does not pose a problem.
  • abrasive wear of abrasive grains becomes severe, and the processing quality may deteriorate.
  • the abrasive wear of the abrasive grains is further suppressed by further reducing the peripheral speed of the grindstone.
  • a solidified abrasive such as an oxide, carbide, nitride and diamond can be used.
  • the grinding wheel 16 is a vitrified bond that is fired at high temperature using clay such as feldspar as a binder, a metal bond that is fixed with metal, a resin bond that is fired at low temperature using a synthetic resin such as phenol or formalin. Is mentioned.
  • the grinding wheel 16 is rotated at a low peripheral speed that has not been conventionally used, so that the hardness, the porosity, and the like of the grinding machine 10 are appropriately adjusted.
  • the grinding wheel 16 may be an electrodeposited abrasive that fixes the abrasive with a plating layer.
  • the lapping apparatus includes an upper surface plate 22, a lower surface plate 23 that is disposed so as to face the upper surface plate 22, and a disk-shaped carrier 24 that is sandwiched therebetween.
  • An object to be polished 18 is disposed on the lower surface of the carrier 24, the object to be polished 18 is sandwiched between the upper surface plate 22 and the lower surface plate 23, and polished with abrasive grains to improve flatness.
  • the CMP apparatus 30 includes a surface plate 32, a polishing head 33, and a slurry supply device 34.
  • a polishing pad 40 is attached to the surface plate 32.
  • the slurry is supplied from the slurry supply device 34 onto the polishing pad 40, the surface plate 32 rotates, and the polishing head 33 presses the object 18 disposed on the polishing pad 40 against the polishing pad 40. While rotating in the same direction as the surface plate 32, the surface 19 of the workpiece 18 is chemically and mechanically polished.
  • the slurry is supplied onto the surface of the polishing pad 40 from the slurry supply device 34 of the CMP apparatus 30.
  • the slurry includes an abrasive, an acid, an oxidant, a surfactant, and water. Colloidal silica, fumed silica, alumina, titania, zirconia, diamond, and a mixture thereof can be used as the abrasive. Further, as the oxidizing agent, a peroxide, nitrate, or the like can be used. Further, the slurry may contain a pH adjusting agent. As the pH adjuster, an acidic substance or a basic substance is appropriately used in order to adjust the pH of the slurry to a desired value.
  • the processing quality of the grinding process can be further improved, and the processing time of the grinding and polishing processes can be further shortened.
  • the processing time in the grinding process becomes longer, the time required for the polishing process after the grinding process can be greatly shortened, and the processing time in the grinding and polishing process can be shortened.
  • the grinding apparatus provided with the grinding motor 14 that rotates at a low speed is not desired and does not exist as an apparatus, so the above-described grinding apparatus was produced.
  • a grinding apparatus was produced using this.
  • Example 1 A single crystal wafer of high-purity alumina was prepared, and the grinding process shown in FIG. 2 was performed.
  • an alumina wafer which is an object to be polished, was ground by using a grinding wheel having a diameter of 150 cm and rotating at a peripheral speed of 10 m / s (rotation speed: 1000 rpm). At this time, the cutting amount was 30 ⁇ m / min.
  • the vitrified bond grindstone which has glass as a main component was used for the grinding grindstone.
  • a lapping process was performed on the ground wafer.
  • the lapping apparatus 20 shown in FIG. 3 was used, and the rotation speed of the upper surface plate was 60 rpm, the rotation speed of the lower surface plate was 60 rpm, and the abrasive grains were treated for 3 hours with diamond.
  • Comparative Example 1 A comparative example in which the grinding wheel was rotated at a peripheral speed of 15 m / s (rotation number: 1500 rpm), the cutting amount was set to 60 ⁇ m / min, and the lapping time was set to 9 hours, and the same processing as in Example 1 was performed. It was set to 1.
  • Example 2 to 3 Except that the object to be polished was a sapphire wafer or a GaN wafer, the same processing as in Example 1 was performed as Examples 2 to 3, respectively.
  • Comparative Examples 2 to 3 were the same as those of Comparative Example 1 except that the objects to be polished were sapphire wafers and GaN wafers.
  • FIG. 5 is a surface image after grinding in Example 1 and Comparative Example 1.
  • the surface roughness Ra after grinding was 0.5 ⁇ m in Comparative Example 1, whereas it was 0.01 ⁇ m in Example 1, and the surface roughness was improved.
  • production of the distortion which arises by a process, an altered layer, a microcrack, etc. is suppressed.
  • the total time until the end of the grinding and lapping process is 9.5 hours in Comparative Example 1, whereas it is 4.0 hours in Example 1, and the entire processing time is short in Example 1.
  • the surface roughness Ra is 0.01 ⁇ m and 0.01 ⁇ m, respectively, and the surface roughness Ra is 0.1 ⁇ m and 0.2 ⁇ m of Comparative Examples 2 to 3, respectively. It was improving.
  • the processing time for the grinding process and the lapping process is 4 hours and 7 hours, respectively. Compared to 8 hours and 15 hours for Comparative Examples 2 to 3, respectively, Processing time has been shortened. In this way, by performing a slower grinding process, which has not been performed in the past in the grinding process, it is possible to further suppress the generation of strain, altered layers, microcracks, and the like caused by processing.
  • the processing time in the process becomes longer, it has been found that the time required for the lapping process after the grinding process can be greatly reduced, and the processing time in the grinding and polishing process can be further reduced.
  • the method for polishing an object to be polished according to the present invention can be used for polishing the surface of an object to be polished such as a semiconductor wafer.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PCT/JP2014/076433 2013-10-02 2014-10-02 研磨物の製造方法 WO2015050218A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015540554A JPWO2015050218A1 (ja) 2013-10-02 2014-10-02 研磨物の製造方法
KR1020157014045A KR20150073214A (ko) 2013-10-02 2014-10-02 연마물의 제조 방법
CN201480003235.4A CN104822491A (zh) 2013-10-02 2014-10-02 研磨物的制造方法
US14/722,222 US20150266155A1 (en) 2013-10-02 2015-05-27 Method for producing polished-article

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013206888 2013-10-02
JP2013-206888 2013-10-02

Related Child Applications (1)

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US14/722,222 Continuation US20150266155A1 (en) 2013-10-02 2015-05-27 Method for producing polished-article

Publications (1)

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WO2015050218A1 true WO2015050218A1 (ja) 2015-04-09

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US (1) US20150266155A1 (ko)
JP (1) JPWO2015050218A1 (ko)
KR (1) KR20150073214A (ko)
CN (1) CN104822491A (ko)
WO (1) WO2015050218A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023277103A1 (ja) * 2021-06-30 2023-01-05 京セラ株式会社 周期表第１３族元素窒化物結晶基板の製造方法

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* Cited by examiner, † Cited by third party
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JP6831835B2 (ja) * 2015-08-14 2021-02-17 エム キューブド テクノロジーズ， インコーポレイテッド 被加工物を仕上げるための、高度に制御可能な処理ツールを有する機械
CN109202593A (zh) * 2018-10-09 2019-01-15 德淮半导体有限公司 晶圆修剪刀片
CN112743447B (zh) * 2020-12-31 2022-04-15 泉芯集成电路制造(济南)有限公司 一种转轴角度确认机构及硅片研磨装置

Citations (6)

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Publication number Priority date Publication date Assignee Title
JPS63200953A (ja) * 1987-02-17 1988-08-19 Kiyoshi Suzuki 超音波加工用アタツチメント
JPH06170703A (ja) * 1991-04-19 1994-06-21 Agency Of Ind Science & Technol セラミックス表面の残留応力制御研削方法
US6206764B1 (en) * 1997-04-17 2001-03-27 The United States Of America As Represented By The Secretary Of Commerce Methods for machining hard materials using alcohols
JP2005271160A (ja) 2004-03-25 2005-10-06 Noritake Co Ltd 平面研削加工用砥石
JP2012223838A (ja) * 2011-04-15 2012-11-15 Shin Etsu Handotai Co Ltd 両頭研削方法及び両頭研削装置
WO2013038573A1 (ja) * 2011-09-15 2013-03-21 新東工業株式会社 硬脆性材料の研削・研磨加工システム、および研削・研磨方法

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US6679758B2 (en) * 2002-04-11 2004-01-20 Saint-Gobain Abrasives Technology Company Porous abrasive articles with agglomerated abrasives
JP4130614B2 (ja) * 2003-06-18 2008-08-06 株式会社東芝 半導体装置の製造方法
TWI286963B (en) * 2004-03-10 2007-09-21 Read Co Ltd Dresser for polishing cloth and method for manufacturing thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63200953A (ja) * 1987-02-17 1988-08-19 Kiyoshi Suzuki 超音波加工用アタツチメント
JPH06170703A (ja) * 1991-04-19 1994-06-21 Agency Of Ind Science & Technol セラミックス表面の残留応力制御研削方法
US6206764B1 (en) * 1997-04-17 2001-03-27 The United States Of America As Represented By The Secretary Of Commerce Methods for machining hard materials using alcohols
JP2005271160A (ja) 2004-03-25 2005-10-06 Noritake Co Ltd 平面研削加工用砥石
JP2012223838A (ja) * 2011-04-15 2012-11-15 Shin Etsu Handotai Co Ltd 両頭研削方法及び両頭研削装置
WO2013038573A1 (ja) * 2011-09-15 2013-03-21 新東工業株式会社 硬脆性材料の研削・研磨加工システム、および研削・研磨方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023277103A1 (ja) * 2021-06-30 2023-01-05 京セラ株式会社 周期表第１３族元素窒化物結晶基板の製造方法

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JPWO2015050218A1 (ja) 2017-03-09
CN104822491A (zh) 2015-08-05
KR20150073214A (ko) 2015-06-30
US20150266155A1 (en) 2015-09-24

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