WO2015032240A1 - Oled阵列基板及其制造方法、显示装置 - Google Patents
Oled阵列基板及其制造方法、显示装置 Download PDFInfo
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- WO2015032240A1 WO2015032240A1 PCT/CN2014/081218 CN2014081218W WO2015032240A1 WO 2015032240 A1 WO2015032240 A1 WO 2015032240A1 CN 2014081218 W CN2014081218 W CN 2014081218W WO 2015032240 A1 WO2015032240 A1 WO 2015032240A1
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- Prior art keywords
- black matrix
- layer
- electrode
- thin film
- array substrate
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000011159 matrix material Substances 0.000 claims abstract description 100
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 239000010410 layer Substances 0.000 claims description 124
- 239000011241 protective layer Substances 0.000 claims description 60
- 239000010408 film Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 26
- 230000000903 blocking effect Effects 0.000 claims 4
- 230000000694 effects Effects 0.000 abstract description 7
- 230000004888 barrier function Effects 0.000 description 13
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 10
- 238000000059 patterning Methods 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000003086 colorant Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
Definitions
- OLED array substrate manufacturing method thereof, and display device
- the present disclosure relates to an OLED array substrate and a method of fabricating the same, and a display device provided with the OLED array substrate. Background technique
- OLED Organic Electroluminescence Display
- PDAs personal digital assistants
- TFT Thin Film Transistor
- Embodiments of the present invention provide an OLED array substrate and a method of fabricating the same, and
- a display device of an OLED array substrate is provided.
- an OLED array substrate comprising a plurality of thin film transistors disposed on a substrate, each of which is provided with a black matrix, and the black matrix is provided with via holes.
- a first electrode, a light-emitting layer, and a second electrode are disposed in order from the bottom to the top of the black matrix.
- the first electrode is connected to the thin film transistor through the via hole, and is disposed between the first electrodes above the adjacent thin film transistor by a barrier wall.
- a first protective layer is disposed between the first electrode and the thin film transistor, and the black matrix is disposed in the same layer as the first protective layer.
- the luminescent layer is a colored luminescent layer.
- the luminescent layer is a white luminescent layer, the first protective layer and the film A color film layer is disposed between the transistors; the via holes penetrate the black matrix and the color film layer.
- the light emitting layer is a white light emitting layer
- a color film layer and a first protective layer are sequentially disposed from bottom to top, and the black matrix and the color
- the film layer is disposed in the same layer; the via hole penetrates through the first protective layer and the black matrix.
- a second protective layer is further disposed between the color film layer and the thin film transistor; the via hole also penetrates the second protective layer.
- the first electrode is an anode and the second electrode is a cathode;
- the first electrode is a cathode and the second electrode is an anode.
- the luminescent layers disposed over adjacent thin film transistors are separated by a barrier wall.
- the retaining wall is disposed in a projection area of the black matrix in the base substrate.
- a method of fabricating an OLED array substrate comprising: forming a pattern including a plurality of thin film transistors on a substrate;
- Forming a pattern including a black matrix the black matrix is located above each of the thin film transistors, and the black matrix is provided with a via hole;
- a pattern including a first electrode, a barrier wall, a light emitting layer, and a second electrode over the black matrix, wherein the first electrode is connected to the thin film transistor through the via hole, and the first electrode is disposed above the adjacent thin film transistor An electrode is separated by the retaining wall.
- the forming the graphic including the black matrix includes:
- a pattern including a first protective layer and a black matrix disposed in the same layer is formed.
- the luminescent layer is a colored luminescent layer.
- the luminescent layer is a white luminescent layer
- the method further includes:
- the via hole penetrates the black matrix and the color film layer.
- the forming the graphic including the black matrix includes:
- the method further includes:
- the method further includes:
- the via hole also penetrates the second protective layer.
- the first electrode is an anode and the second electrode is a cathode;
- the first electrode is a cathode and the second electrode is an anode.
- the luminescent layers formed over adjacent thin film transistors are separated by a barrier wall.
- the retaining wall is disposed in a projection area of the black matrix in the base substrate.
- a display device comprising the above described OLED array substrate.
- FIG. 1 is a schematic structural view of an OLED array substrate according to Embodiment 1 of the present invention
- FIG. 2 is a schematic structural view of an OLED array substrate according to Embodiment 2 of the present invention
- FIG. 4 is a schematic structural diagram of an OLED array substrate according to Embodiment 3 of the present invention
- FIG. 5 is another schematic structural diagram of an OLED array substrate according to Embodiment 3 of the present invention.
- the OLED array substrate provided by the embodiment of the invention includes a thin film transistor (TFT) disposed on the substrate, a black matrix is disposed above the TFT, and a via is formed on the black matrix.
- TFT thin film transistor
- a first electrode, a light-emitting layer, and a second electrode are disposed in this order from the bottom to the top of the black matrix. The first electrode passes through the via and the TFT Connected.
- S 1 A pattern including a plurality of TFTs is formed on the base substrate.
- a pattern including a first electrode, a retaining wall, a light emitting layer, and a second electrode is formed over the black matrix.
- the first electrode is connected to the TFT through the via hole, and the adjacent first electrodes are separated by a barrier wall.
- a black matrix is disposed above the TFT, and the first electrode of the OLED is connected to the TFT through a via hole on the black matrix.
- the black matrix can block the light emitted by the OLED and avoid the illumination of the TFT, so that the current in the OLED driven by the TFT does not cause an error, thereby ensuring the display effect of the active matrix OLED display device.
- an OLED array substrate includes a plurality of TFTs 2, a gate insulating layer 21, and an interlayer insulating layer 22 disposed on a substrate substrate 1.
- a black matrix 6 and a first protective layer 31 are disposed above each of the TFTs 2.
- the first electrode 41, the light-emitting layer 43, and the second electrode 42 are disposed in this order from the bottom to the top of the first protective layer 31, wherein the light-emitting layer 43 is composed of three colors of red (R), green (G), and blue (B). Color luminescent layer.
- a black matrix 6 located above the TFT 2 is disposed in the same layer as the first protective layer 31, and a via 60 is formed in the black matrix 6.
- the first electrode 41 is connected to the TFT 2 through the via 60, and the adjacent first electrodes 41 are separated by a barrier 44. Further, above the second electrode 42, an encapsulation layer 5 is usually provided.
- the first electrode 41 is an anode of the OLED
- the second electrode 42 is a cathode of the OLED.
- the first electrode is the cathode of the OLED and the second electrode is the anode of the OLED.
- the light-emitting layers 43 disposed above the adjacent thin film transistors TFT are separated by a barrier wall 44.
- the light-emitting layer 43 disposed over each of the thin film transistors TFT may be integrally formed, i.e., form a light-emitting layer covering the barrier wall 44 and the first electrode 41.
- the retaining wall 44 is disposed in the projection area of the black matrix 6 in the base substrate.
- the first electrode 41 spans a gap between two adjacent TFTs 2.
- a black matrix 6 is disposed above the TFT 2, and the first electrode 41 of the OLED is connected to the TFT 2 through the via 60 on the black matrix 6.
- the black matrix 6 can block the light emitted by the OLED and avoid the illumination of the TFT2, so that the current in the OLED driven by the TFT2 does not cause an error, thereby ensuring the display of the active matrix type OLED display device. effect.
- a TFT for example, a TFT, a gate insulating layer, an interlayer insulating layer, or the like can be formed on the base substrate by a conventional patterning process.
- the TFT may be a top gate TFT or a bottom gate TFT.
- the step S12 includes:
- S121 depositing a first protective layer on the substrate, and etching the portion of the first protective layer corresponding to the upper portion of the TFT by a patterning process.
- the material of the first protective layer is, for example, silicon nitride (SiNx) or silicon oxide (SiOx).
- S122 forming a black matrix on the portion where the first protective layer is etched, that is, over the TFT, and forming a via hole on the black matrix to block the TFT, preventing the TFT from being illuminated, and simultaneously implementing the black matrix and the first
- the protective layer is disposed in the same layer to keep the surface of the entire substrate flat.
- the above manufacturing method further includes:
- the first electrode, the barrier, the luminescent layer, and the second electrode are each formed by a conventional patterning process, and then an encapsulation layer is formed on the entire substrate to isolate the various components on the substrate from the outside water and air.
- the encapsulation layer may be an organic layer, an inorganic layer, or a laminate of an organic layer and an inorganic layer.
- the encapsulation layer is formed by using a resin, and then a glass cover plate is covered; or, the sealant is coated on the periphery of the substrate, and the resin is sealed with a sealant and a cover glass; or, after the encapsulation layer is formed
- the glass frit is coated on the periphery of the substrate, covered with a glass cover plate, and the glass frit is irradiated with a laser to weld the cover glass to the substrate.
- the OLED array substrate provided by the embodiment of the present invention may be a double-sided emitting device. Of course, the OLED array substrate can also be made into a top emitting device or a bottom emitting device according to actual conditions.
- an OLED array substrate includes a plurality of TFTs 2, a gate insulating layer 21, and an interlayer insulating layer 22 disposed on a substrate 1.
- a color film layer 7 including three colors of red (R), green (G), and blue (B) is disposed above each of the TFTs 2.
- a first protective layer 31 is disposed above the color film layer 7.
- the first electrode 41, the light-emitting layer 43, and the second electrode 42 are disposed in this order from the bottom to the top of the first protective layer 31, wherein the light-emitting layer 43 is a white light-emitting layer.
- the black matrix 6 located above the TFT 2 is disposed in the same layer as the first protective layer 31, and has a via 60 penetrating through the black matrix 6 and the color film layer 7.
- the first electrode 41 is connected to the TFT 2 through the via 60, and the adjacent first electrodes 41 are separated by a barrier 44. Further, above the second electrode 42, an encapsulation layer 5 is usually provided.
- the first electrode 41 is an anode of the OLED
- the second electrode 42 is a cathode of the OLED.
- the first electrode can also be the cathode of the OLED and the second electrode can be the anode of the OLED.
- a black matrix 6 is disposed above the TFT 2, and the first electrode 41 of the OLED is connected to the TFT 2 through the via 60 passing through the black matrix 6 and the color film layer 7.
- the black matrix 6 can block the light emitted by the OLED and avoid the illumination of the TFT2, so that the current in the OLED driven by the TFT2 does not cause an error, thereby ensuring the display of the active matrix type OLED display device. effect.
- the black matrix 6 located above the TFT 2 is also located in two adjacent sub-pixels (for example, the red sub-pixel corresponds to the red color film layer (R) in FIG. 2, and the green sub-pixel corresponds to the figure.
- the green color film layer (G) in 2 the blue sub-pixel corresponds to the blue color film layer (B) in FIG. 2, so the black matrix 6 can also prevent the light emitted by the OLED in the sub-pixel from being irradiated to the adjacent
- the color film in each sub-pixel is ensured to be aligned with the light-emitting area of the OLED, thereby improving the sharpness of the image displayed by the OLED display device.
- a second protective layer 32 is further disposed between the color film layer 7 and the TFT 2.
- the via hole 60 also penetrates the second protective layer 32 (herein, "through” refers to a partial penetration. That is, a part of the second protective layer 32 is penetrated.
- the second protective layer 32 material is, for example, silicon nitride or silicon oxide for protecting the TFT 2.
- the color film layer 7 in the embodiment of the present invention can also function to protect the TFT 2, Therefore, the second protective layer 32 can be omitted in some cases.
- This step is the same as step S11 in the first embodiment.
- a pattern of a TFT, a gate insulating layer, an interlayer insulating layer or the like can be formed on the base substrate by a conventional patterning process.
- a pattern including the second protective layer is formed using silicon nitride or silicon oxide.
- this step can also be omitted in some cases.
- a color film layer of three colors of red, green, and blue is formed on a substrate by a coloring resin material by a conventional patterning process.
- the step S24 includes:
- S241 depositing a first protective layer on the substrate, and etching away the portion of the first protective layer corresponding to the upper portion of the TFT by a patterning process.
- the material of the first protective layer for example, silicon nitride (SiNx) or silicon oxide (SiOx) 0
- S242 forming a black matrix on the portion where the first protective layer is etched, that is, over the TFT, to block the TFT, preventing the TFT from being exposed to light, and simultaneously realizing the same arrangement of the black matrix and the first protective layer, so that the entire substrate The surface remains flat. Then, via holes are formed on the black matrix through the black matrix, the color film layer, and the second protective layer by a patterning process.
- the above manufacturing method further includes:
- This step is substantially the same as the step S13 in the embodiment 1.
- the light-emitting layer 43 formed in the embodiment of the present invention may be separately formed in each sub-pixel (as shown in FIG. 2) or on the substrate. Form a whole layer on top (as shown in Figure 3).
- the OLED array substrate provided by the embodiment of the present invention the OLED emits white light, and then the full color display is realized by the color film layer. Therefore, the OLED array substrate provided by the embodiment of the present invention is a bottom emission device.
- the embodiment of the present invention is basically the same as the embodiment 2, and the difference is that, as shown in FIG. 4 and FIG. 5, in the embodiment, the black matrix 6 is disposed in the same layer as the color film layer 7, and the via 60 penetrates the first protective layer. 31. Black matrix 6 and second protective layer 32.
- a black matrix 6 is disposed above the TFT 2, and the first electrode 41 of the OLED passes through the via 60 of the first protective layer 31, the black matrix 6 and the second protective layer 32. Connected to TFT2.
- the black matrix 6 can block the light emitted by the OLED and avoid the illumination of the TFT2, so the current in the OLED driven by the TFT2 does not cause an error, thereby ensuring the display of the active matrix type OLED display device. effect.
- the black matrix 6 located above the TFT 2 is also located between two adjacent sub-pixels, so the black matrix 6 can also prevent the light emitted by the OLED in the sub-pixel from illuminating the color in the adjacent sub-pixels.
- the color film in each sub-pixel is ensured to be aligned with the light-emitting area of the OLED, thereby improving the sharpness of the image displayed by the OLED display device.
- steps S31 and S32 are the same as steps S21 and S22 in the embodiment 2, and are not described herein again.
- a color film layer of three colors of red, green, and blue is formed on the substrate by using a colored resin material, and then a black matrix located above the TFT and located between the color film layers is formed.
- a first protective layer is formed on the substrate by using silicon nitride, silicon oxide or an organic resin, and via holes penetrating the first protective layer, the black matrix and the second protective layer are formed by a patterning process.
- step S35 On the basis of completing the foregoing steps, forming a pattern including the first electrode, the retaining wall, the light emitting layer, the second electrode, and the encapsulation layer.
- the first electrode is connected to the TFT through the via hole, and the adjacent first electrodes are separated by the barrier wall.
- This step is the same as step S25 in Embodiment 2, wherein the light-emitting layer 43 may be separately formed in each sub-pixel (as shown in FIG. 4), or an integral layer may be formed on the substrate (as shown in FIG. 5). .
- the OLED emits white light, and then the full color display is realized by the color film layer. Therefore, the OLED array substrate provided by the embodiment of the present invention is a bottom emission device.
- the embodiment of the invention provides a display device comprising any of the OLED array substrates of Embodiments 1 to 3.
- the display device is, for example, an OLED panel, a television, a display, a digital photo frame, a mobile phone, a tablet, or the like, and any product or component having a display function.
- the display device provided by the embodiment of the present invention has the same structure as the OLED array substrate provided by the embodiment of the present invention, the same technical effect can be produced and the same technical problem can be solved.
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Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US14/420,488 US9543368B2 (en) | 2013-09-09 | 2014-06-30 | OLED array substrate having black matrix, manufacturing method and display device thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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CN201310406560.2A CN103456764B (zh) | 2013-09-09 | 2013-09-09 | Oled阵列基板及其制造方法、显示装置 |
CN201310406560.2 | 2013-09-09 |
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US (1) | US9543368B2 (zh) |
CN (1) | CN103456764B (zh) |
WO (1) | WO2015032240A1 (zh) |
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CN103456764B (zh) | 2013-09-09 | 2016-01-20 | 京东方科技集团股份有限公司 | Oled阵列基板及其制造方法、显示装置 |
CN103700687A (zh) * | 2013-12-20 | 2014-04-02 | 京东方科技集团股份有限公司 | 有机电致发光显示面板及其制造方法、显示装置 |
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CN104299973B (zh) * | 2014-09-25 | 2018-04-06 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示装置 |
KR102307727B1 (ko) * | 2014-12-24 | 2021-10-05 | 엘지디스플레이 주식회사 | 유기발광 표시장치 및 이를 제조하는 방법 |
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CN103456764A (zh) | 2013-12-18 |
US9543368B2 (en) | 2017-01-10 |
US20150249120A1 (en) | 2015-09-03 |
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