WO2019127790A1 - 用于woled显示器的彩膜基板及woled显示器 - Google Patents

用于woled显示器的彩膜基板及woled显示器 Download PDF

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Publication number
WO2019127790A1
WO2019127790A1 PCT/CN2018/074021 CN2018074021W WO2019127790A1 WO 2019127790 A1 WO2019127790 A1 WO 2019127790A1 CN 2018074021 W CN2018074021 W CN 2018074021W WO 2019127790 A1 WO2019127790 A1 WO 2019127790A1
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layer
disposed
substrate
pixel defining
color
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PCT/CN2018/074021
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English (en)
French (fr)
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魏锋
刘扬
李金川
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深圳市华星光电半导体显示技术有限公司
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Priority to US15/754,438 priority Critical patent/US10535719B2/en
Publication of WO2019127790A1 publication Critical patent/WO2019127790A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means

Definitions

  • the invention belongs to the field of organic display technology, and in particular to a color film substrate and a WOLED display for a WOLED display.
  • OLED Organic Light-Emitting Diode
  • OLED displays can be classified into three modes: RGBOLED, WOLED+Color Filter, and BOLED+color change layer.
  • RGBOLED method uses independent luminescent materials to make RGB three-color organic luminescent layer, which has good luminous efficiency.
  • the characteristic is that there is no need to add a color filter or a color change layer film, but the RGBOLED three-color process adopts a shadow mask evaporation method, and high-definition pixels have high requirements on process precision; the BOLED+ color change layer mode emits blue light.
  • the material is made of organic light-emitting layer, and the film with color change layer is separated by light.
  • the luminous efficiency of the device is not as good as that of RGBOLED, and the efficiency and life of BOLED are also extremely unfavorable for the development of the technology;
  • WOLED is made of white light-emitting material.
  • the organic light-emitting layer is provided with a color filter in the middle, and the luminous efficiency is not as good as that of the RGBOLED method, but the open mask evaporation method is simple. Therefore, the current mainstream technology in the industry is the development of RGBOLED and WOLED+ color filter technology.
  • WOLED+ color filter technology In the WOLED+ color filter technology, a device of WOLED (ie, white OLED) is first prepared, and then three primary colors are obtained through a color filter, and then three primary colors are combined to achieve colorization.
  • the key to the technology is to obtain high efficiency white light and selectivity.
  • Good color filters, color filters inevitably cause light loss, but high-precision shadow mask is not needed in the process of WOLED fabrication, and color filter technology is maturely applied in LCD mass production technology, so WOLED+ Color filter technology is the technology with the largest potential for mass production of large-size full-color OLED displays.
  • WOLED devices have two configurations of top emission and bottom emission devices. With the large resolution and high resolution requirements of OLED displays, top emission is a mainstream development due to the good pixel aperture ratio and high resolution.
  • the illuminating sub-pixel has a distance from the light-emitting region of the cover, the adjacent illuminating sub-pixel has the problem and risk of light leakage and color mixing.
  • a color film substrate for a WOLED display comprising: a first substrate; a plurality of color photoresist layers disposed on the first substrate, the color photoresist layers being mutually Between the first pixel defining layer disposed within the interval; and a reflective film layer disposed on the first pixel defining layer.
  • the reflective film layer covers an upper surface and a side surface of the first pixel defining layer, wherein the upper surface is a surface of the first pixel defining layer facing away from the first substrate, The side surface is a surface of the first pixel defining layer that extends from the upper surface to the color photoresist layer.
  • an angle between the upper surface and the side surface of the first pixel defining layer is 120° to 150°.
  • the reflective film layer is made of aluminum or silver, and the reflective film has a thickness of 50 nm to 100 nm.
  • the plurality of color photoresists include a plurality of red photoresists, a plurality of green photoresists, and a plurality of blue photoresists.
  • a WOLED display comprising: a driving light emitting substrate and the color film substrate, wherein the driving light emitting substrate comprises: a second substrate; and the facing of the second substrate a thin film transistor on a surface of the reflective film layer; a flat layer disposed on the thin film transistor; an anode disposed on the flat layer and penetrating the flat layer to be connected to the thin film transistor; disposed on the flat layer And a second pixel defining layer having a pixel defining aperture exposing the anode, the pixel defining aperture opposite the corresponding color photoresist layer; an OLED functional layer disposed on the exposed anode; The second pixel defines a layer and a cathode on the OLED functional layer.
  • the thin film transistor includes: an active layer disposed on a surface of the second substrate facing the reflective film layer; a first insulating layer disposed on the active layer; and a gate disposed on a first insulating layer; a second insulating layer disposed on the gate, the active layer, and the substrate; a source and a drain disposed on the second insulating layer and respectively penetrating through a second insulating layer connected to the active layer; wherein the flat layer is disposed on the source, the drain, and the second insulating layer, and the anode penetrates the flat layer to The drain is connected.
  • the OLED functional layer sequentially includes a hole generating layer, a hole transporting layer, an organic light emitting layer, an electron transporting layer, and an electron injecting layer from the anode to the cathode.
  • the WOLED display further includes: an insulating protective layer disposed on the cathode; wherein a reflective film layer on an upper surface of the first pixel defining layer of the color filter substrate is disposed at the second pixel Defining the insulating protective layer on the layer.
  • the cathode is transmissive and the anode is reflective.
  • the invention has the beneficial effects that the invention forms a reflective film layer at the junction of the color film substrate and the driving light-emitting substrate, thereby preventing the light-emitting side of each OLED functional layer from leaking to the adjacent OLED functional layer, thereby avoiding adjacent Light leakage and color mixing occur between the OLED functional layers.
  • FIG. 1 is a schematic structural view of a color filter substrate for a WOLED display according to an embodiment of the present invention
  • FIG. 2 is a schematic structural view of a WOLED display according to an embodiment of the present invention.
  • FIG. 1 is a schematic structural view of a color filter substrate for a WOLED display according to an embodiment of the present invention.
  • Fig. 1 only three color resist layers are shown, but the invention is not limited thereto. It should be understood that in a WOLED display, a plurality of color photoresist layers may be disposed according to actual needs.
  • a color filter substrate 100 for a WOLED display includes a first substrate 110, three color photoresist layers 120, a first pixel defining layer 130, and a reflective film layer 140.
  • the three color photoresist layers 120 are a red photoresist layer R, a green photoresist layer G, and a blue photoresist layer B, respectively, but the invention is not limited thereto.
  • the plurality of color photoresist layers 120 disposed according to actual needs may include a plurality of red photoresist layers R, a plurality of green photoresist layers G, and a plurality of blue photoresist layers B. That is to say, the number setting of the red photoresist layer R, the green photoresist layer G, and the blue photoresist layer B is also set according to actual needs.
  • the three color photoresist layers 120 are disposed on the first substrate 110 with spaces between adjacent color photoresist layers 120.
  • the first pixel defining layer 130 is disposed within the interval.
  • the reflective film layer 140 is disposed on the first pixel defining layer 130, the specific function of which will be described below.
  • the reflective film layer 140 covers the upper surface and the side surface of the first pixel defining layer 130.
  • the upper surface of the first pixel defining layer 130 refers to the surface of the first pixel defining layer 130 facing away from the first substrate 110, or the upper surface of the first pixel defining layer 130 refers to the first pixel defining layer 130.
  • a side surface of the first pixel defining layer 130 refers to a first pixel defining layer 130 extending from an upper surface thereof to a color photoresist layer
  • the surface of 120 the specific role will be described below.
  • the reflective film layer 140 is made of aluminum or silver, but the present invention is not limited thereto, and may be made of other materials having high reflectance, for example. Further, the thickness of the reflective film layer 140 is 50 nm to 100 nm, but the present invention is not limited thereto.
  • the angle between the upper surface and the side surface of the first pixel defining layer 130 is 120° to 150°, that is, the angle between the side surface and the bottom surface of the first pixel defining layer 130 is 30°. 60°.
  • FIG. 2 is a schematic structural view of a WOLED display according to an embodiment of the present invention.
  • a WOLED display according to an embodiment of the present invention includes a color filter substrate 100 and a driving light emitting substrate 200; wherein the color film substrate 100 and the driving light emitting substrate 200 are disposed to face each other, that is, the surfaces of the film layers are formed.
  • the driving the light emitting substrate 200 includes: a second substrate 210, an active layer 220, a first insulating layer 230, a gate 240, a second insulating layer 250, a source 260, a drain 270, a flat layer 280, an anode 290, The second pixel defining layer 300, the OLED functional layer 310, the cathode 320, and the insulating protective layer 330.
  • the active layer 220 is disposed on the second substrate 210.
  • the active layer 220 may be formed of, for example, amorphous silicon, low temperature polysilicon, IGZO, or the like, but the present invention is not limited thereto.
  • the first insulating layer 230 is disposed on the active layer 220.
  • the gate 240 is disposed on the first insulating layer 230.
  • the second insulating layer 250 is disposed on the gate 240, the active layer 220, and the substrate 100.
  • the source 260 and the drain 270 are disposed on the second insulating layer 250, and the source 260 and the drain 270 respectively penetrate the second insulating layer 250 to be connected to the active layer 220.
  • the thin film transistor according to an embodiment of the present invention is constituted by the active layer 220, the first insulating layer 230, the gate electrode 240, the second insulating layer 250, the source 260, and the drain 270, and the thin film transistor thus structured is only It is an embodiment of the present invention, and the structure of the thin film transistor of the present invention is not limited thereto. Further, in the present embodiment, three thin film transistors are shown, but the present invention is not limited thereto.
  • the flat layer 280 is disposed on the second insulating layer 250, the source 260, and the drain 270.
  • the anode 290 is disposed on the flat layer 280 and penetrates the flat layer 280 to be connected to the drain 270.
  • the anode 290 has a high reflectance.
  • the second pixel defining layer 300 is disposed on the anode 290 and the flat layer 280.
  • a pixel having a exposed anode 290 in the second pixel defining layer 300 defines a hole 300A.
  • the OLED functional layer 310 is disposed on the exposed anode 290.
  • the OLED functional layer 310 emits white light.
  • the OLED functional layer 310 includes a hole generating layer, a hole transporting layer, an organic light emitting layer, an electron transporting layer, and an electron injecting layer from bottom to top; however, the OLED functional layer 310 of the present invention The structure is not limited to this. In the present embodiment, three OLED functional layers 310 are shown, and one OLED functional layer 310 corresponds to one color photoresist 120.
  • an OLED functional layer 310, a color photoresist 120, and a circuit device such as a thin film transistor that drives the OLED functional layer 310 to emit light may be referred to as one sub-pixel.
  • a circuit device such as a thin film transistor that drives the OLED functional layer 310 to emit light
  • the thin film transistors driving the OLED functional layer 310 may be, for example, two, three or More, specifically need to consider the drive circuit architecture.
  • the cathode 320 is disposed on the second pixel defining layer 300 and the OLED functional layer 310.
  • the cathode 320 has high light transmittance, but the present invention is not limited thereto.
  • An insulating protective layer 330 is disposed on the cathode 320.
  • the insulating protective layer 330 is positioned between the cathode 310 and the reflective film layer 140 to partition the cathode 310 and the reflective film layer 140.
  • the reflective film layer 140 can also reflect the light emitted from the OLED functional layer 310 that is not used for the light-emitting display, so that the light can be reflected by the anode 290 as a light for display, thereby improving the utilization of light.
  • the light side of each OLED functional layer is prevented from leaking to the adjacent OLED functional layer.
  • the phenomenon of light leakage and color mixing between adjacent OLED functional layers is avoided.

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  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本发明提供了一种用于WOLED显示器的彩膜基板，其包括：第一基板；设置于所述第一基板上的多个彩色光阻层，所述彩色光阻层彼此之间具有间隔；设置于所述间隔内的第一像素定义层；设置于所述第一像素定义层上的反射膜层。本发明还提供了一种WOLED显示器。本发明通过在彩膜基板和驱动发光基板的结合处形成反射膜层，从而防止各个OLED功能层发光的光线侧漏到各自相邻的OLED功能层处，进而避免相邻的OLED功能层之间出现漏光混色等现象。

Description

用于WOLED显示器的彩膜基板及WOLED显示器 技术领域
本发明属于有机显示技术领域，具体地讲，涉及一种用于WOLED显示器的彩膜基板及WOLED显示器。
背景技术
近年来，有机发光二极管(Organic Light-Emitting Diode，OLED)显示器成为国内外非常热门的新兴平面显示器产品，这是因为OLED显示器具有自发光、广视角、短反应时间、高发光效率、广色域、薄厚度、可制作大尺寸与可挠曲的显示器及制程简单等特性，而且它还具有低成本的潜力。
OLED显示器按照彩色化方式分类可以分为RGBOLED、WOLED+彩色滤光片(Color Filter)、BOLED+色彩变化层三种方式；其中，RGBOLED方式运用独立发光材料制作RGB三色有机发光层，具有发光效率佳的特性，不需要加彩色滤光片或色彩变化层的薄膜，但是RGBOLED三色法制程采用屏蔽(shadow mask)蒸镀法，高精细像素对制程精度要求高；BOLED+色彩变化层方式以蓝光发光材料制作有机发光层，发光时中间隔上一层色彩变化层的薄膜，器件发光效率不如RGBOLED方式，并且BOLED的效率、寿命等问题也是对此技术发展极为不利；WOLED则是以白光发光材料制作有机发光层，中间加了一层彩色滤光片，发光效率不如RGBOLED方式，但是采用开放(Open mask)蒸镀法，其制程简单。因此，目前行业主流的技术是发展RGBOLED和WOLED+彩色滤光片技术。
在WOLED+彩色滤光片技术中，首先制备WOLED(即白光OLED)的器件，然后通过彩色滤光片得到三基色，再组合三基色实现彩色化，该技术关键在于获得高效率的白光和选择性好的彩色滤光片，彩色滤光片不可避免的要造成光损失，但是WOLED制成过程中不需要高精度的shadow mask，而彩色滤光片技术成熟应用在LCD量产技术中，因此WOLED+彩色滤光片技术是大尺寸全彩色OLED显示器量产潜力最大的技术。WOLED器件有顶发射与底发射 器件两种结构方式，随着对OLED显示器的大尺寸高分辨的要求，顶发射由于像素开口率好且有利于实现高分辨率，因此顶发射WOLED器件是发展主流技术方向。但是顶发射WOLED器件在制作过程中由于发光子像素与盖板出光区有距离，因此相邻发光子像素存在漏光混色的问题与风险。
发明内容
为了解决上述现有技术的问题，本发明的目的在于提供一种消除WOLED显示器中的相邻OLED功能层之间存在的漏光混色问题的用于WOLED显示器的彩膜基板及WOLED显示器。
根据本发明的一方面，提供了一种用于WOLED显示器的彩膜基板，其包括：第一基板；设置于所述第一基板上的多个彩色光阻层，所述彩色光阻层彼此之间具有间隔；设置于所述间隔内的第一像素定义层；设置于所述第一像素定义层上的反射膜层。
进一步地，所述反射膜层覆盖在所述第一像素定义层的上表面和侧表面上，所述上表面为所述第一像素定义层的背向所述第一基板的表面，所述侧表面为所述第一像素定义层的由所述上表面延伸至所述彩色光阻层的表面。
进一步地，所述第一像素定义层的上表面和侧表面之间的夹角为120°～150°。
进一步地，所述反射膜层由铝或银制成，并且所述反射膜的厚度为50nm～100nm。
进一步地，所述多个彩色光阻包括多个红色光阻、多个绿色光阻和多个蓝色光阻。
根据本发明的另一方面，还提供了一种WOLED显示器，其包括驱动发光基板和上述的彩膜基板，所述驱动发光基板包括：第二基板；设置于所述第二基板的面向所述反射膜层的表面上的薄膜晶体管；设置于所述薄膜晶体管上的平坦层；设置于所述平坦层上且贯穿所述平坦层以与所述薄膜晶体管连接的阳极；设置于所述平坦层上且具有暴露所述阳极的像素限定孔的第二像素定义层，所述像素限定孔与对应的彩色光阻层相对；设置于暴露出的所述阳极上的 OLED功能层；设置于所述第二像素定义层和所述OLED功能层上的阴极。
进一步地，所述薄膜晶体管包括：有源层，设置于所述第二基板的面向所述反射膜层的表面上；第一绝缘层，设置于所述有源层上；栅极，设置于所述第一绝缘层上；第二绝缘层，设置于所述栅极、所述有源层和所述基板上；源极和漏极，设置于所述第二绝缘层上且分别贯穿所述第二绝缘层以与所述有源层连接；其中，所述平坦层设置于所述源极、所述漏极和所述第二绝缘层上，所述阳极贯穿所述平坦层以与所述漏极连接。
进一步地，所述OLED功能层从所述阳极到所述阴极顺序包括：空穴发生层、空穴传输层、有机发光层、电子传输层、电子注入层。
进一步地，所述WOLED显示器还包括：设置于所述阴极上的绝缘保护层；其中，所述彩膜基板的第一像素定义层的上表面上的反射膜层设置于位于所述第二像素定义层上的所述绝缘保护层上。
进一步地，所述阴极是透射的，所述阳极是反射的。
本发明的有益效果：本发明通过在彩膜基板和驱动发光基板的结合处形成反射膜层，从而防止各个OLED功能层发光的光线侧漏到各自相邻的OLED功能层处，进而避免相邻的OLED功能层之间出现漏光混色等现象。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是根据本发明的实施例的用于WOLED显示器的彩膜基板的结构示意图；
图2是根据本发明的实施例的WOLED显示器的结构示意图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本 领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中，为了清楚起见，夸大了层和区域的厚度。相同的标号在整个说明书和附图中表示相同的元器件。
将理解的是，当诸如层、膜、区域或基底等的元件被称作“在”另一元件“上”时，该元件可以直接在所述另一元件上，或者也可以存在中间元件。可选择地，当元件被称作“直接在”另一元件“上”时，不存在中间元件。
图1是根据本发明的实施例的用于WOLED显示器的彩膜基板的结构示意图。在图1中，仅示出了三个彩色光阻层，但本发明并不限制于此。应当理解的是，在一个WOLED显示器中，可以根据实际需求设置多个彩色光阻层。
参照图1，根据本发明的实施例的用于WOLED显示器的彩膜基板100包括：第一基板110、三个彩色光阻层120、第一像素定义层130、反射膜层140。
在本实施例中，这三个彩色光阻层120分别为红色光阻层R、绿色光阻层G和蓝色光阻层B，但本发明并不限制于此。例如，根据实际需求设置的多个彩色光阻层120可以包括多个红色光阻层R、多个绿色光阻层G和多个蓝色光阻层B。也就是说，红色光阻层R、绿色光阻层G和蓝色光阻层B的数量设置也是按照实际需求而设置。
三个彩色光阻层120设置于第一基板110上，并且相邻的彩色光阻层120之间具有间隔。第一像素定义层130设置于该间隔内。反射膜层140设置于第一像素定义层130上，具体作用将在下面描述。
进一步地，反射膜层140覆盖在第一像素定义层130的上表面和侧表面上。这里，第一像素定义层130的上表面指的是第一像素定义层130的背向第一基板110的表面，或者说第一像素定义层130的上表面指的是第一像素定义层130的与第一像素定义层130设置在第一基板110上的底面相对的表面；第一像素定义层130的侧表面指的是第一像素定义层130的由其上表面延伸至彩色光阻层120的表面，具体作用将在下面描述。
另外，在本实施例中，优选地，进一步地，反射膜层140由铝或银制成， 但本发明并不限制于此，例如也可以是其他的具有高反射率的材料制成。并且反射膜层140的厚度为50nm～100nm，但本发明并不限制于此。
此外，第一像素定义层130的上表面和侧表面之间的夹角为120°～150°，也就是说，第一像素定义层130的侧表面与底面之间的夹角为30°～60°。
以下对应用了上述的彩膜基板100的WOLED显示器进行详细描述。图2是根据本发明的实施例的WOLED显示器的结构示意图。
参照图2，根据本发明的实施例的WOLED显示器包括彩膜基板100和驱动发光基板200；其中彩膜基板100和驱动发光基板200对盒设置，即二者制作膜层的表面面对。
具体地，驱动发光基板200包括：第二基板210、有源层220、第一绝缘层230、栅极240、第二绝缘层250、源极260、漏极270、平坦层280、阳极290、第二像素定义层300、OLED功能层310、阴极320和绝缘保护层330。
具体地，有源层220设置于第二基板210上。有源层220可例如由非晶硅、低温多晶硅、IGZO等材料形成，但本发明并不限制于此。第一绝缘层230设置于有源层220上。栅极240设置于第一绝缘层230上。第二绝缘层250设置于栅极240、有源层220和基板100上。源极260和漏极270设置于第二绝缘层250上，并且源极260和漏极270分别贯穿第二绝缘层250以与有源层220连接。
这里，由有源层220、第一绝缘层230、栅极240、第二绝缘层250、源极260、漏极270构成了根据本发明的实施例的薄膜晶体管，并且这样结构的薄膜晶体管仅是本发明的一种实施方式，本发明的薄膜晶体管的结构并不限制于此。此外，在本实施例中，示出了三个薄膜晶体管，但本发明并不限制于此。
平坦层280设置于第二绝缘层250、源极260和漏极270上。阳极290设置于平坦层280上且贯穿平坦层280以与漏极270连接。在本实施例中，阳极290具有高反射率。
第二像素定义层300设置于阳极290和平坦层280上。第二像素定义层300中具有暴露阳极290的像素限定孔300A。
OLED功能层310设置于暴露的阳极290上。此外，OLED功能层310发出白光。作为本发明的一种实施方式，OLED功能层310从下至上顺序包括：空穴发生层、空穴传输层、有机发光层、电子传输层、电子注入层；但本发明的OLED功能层310的结构并不限制于此。在本实施例中，示出了三个OLED功能层310，并且一个OLED功能层310对应一个彩色光阻120。此外，一个OLED功能层310、一个彩色光阻120以及驱动OLED功能层310进行发光的诸如薄膜晶体管等电路器件可以被称为一个子像素。应当说明的是，虽然在图2中示出了一个薄膜晶体管对应一个OLED功能层310，但本发明并不限制于此，例如驱动OLED功能层310的薄膜晶体管可例如是两个、三个或者更多，具体需考虑驱动电路架构。
阴极320设置于第二像素定义层300和OLED功能层310上。在本实施例中，阴极320具有高透光率，但本发明并不限制于此。绝缘保护层330设置于阴极320上。
当彩膜基板100和驱动发光基板200对盒设置之后，绝缘保护层330位于阴极310和反射膜层140之间，以隔开阴极310和反射膜层140。
如此，一个OLED功能层310发出的光线会被反射膜层140反射，从而无法到达相邻的OLED功能层310处，从而可以避免相邻的OLED功能层310出现漏光混色等现象。进一步地，反射膜层140还可以将OLED功能层310的出射的没有用于发光显示的光线反射回，从而可以经阳极290的再次反射作为显示用光线，进而可以提高光线的利用率。
综上所述，根据本发明的实施例，通过在彩膜基板和驱动发光基板的结合处形成反射膜层，从而防止各个OLED功能层发光的光线侧漏到各自相邻的OLED功能层处，进而避免相邻的OLED功能层之间出现漏光混色等现象。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (13)

  1. 一种用于WOLED显示器的彩膜基板，其中，包括：
    第一基板；
    设置于所述第一基板上的多个彩色光阻层，所述彩色光阻层彼此之间具有间隔；
    设置于所述间隔内的第一像素定义层；
    设置于所述第一像素定义层上的反射膜层。
  2. 根据权利要求1所述的彩膜基板，其中，所述反射膜层覆盖在所述第一像素定义层的上表面和侧表面上，所述上表面为所述第一像素定义层的背向所述第一基板的表面，所述侧表面为所述第一像素定义层的由所述上表面延伸至所述彩色光阻层的表面。
  3. 根据权利要求2所述的彩膜基板，其中，所述第一像素定义层的上表面和侧表面之间的夹角为120°～150°。
  4. 根据权利要求1所述的彩膜基板，其中，所述反射膜层由铝或银制成，并且所述反射膜的厚度为50nm～100nm。
  5. 根据权利要求2所述的彩膜基板，其中，所述反射膜层由铝或银制成，并且所述反射膜的厚度为50nm～100nm。
  6. 根据权利要求1所述的彩膜基板，其中，所述多个彩色光阻包括多个红色光阻、多个绿色光阻和多个蓝色光阻。
  7. 一种WOLED显示器，其中，包括驱动发光基板和权利要求1所述的彩膜基板，所述驱动发光基板包括：
    第二基板；
    设置于所述第二基板的面向所述反射膜层的表面上的薄膜晶体管；
    设置于所述薄膜晶体管上的平坦层；
    设置于所述平坦层上且贯穿所述平坦层以与所述薄膜晶体管连接的阳极；
    设置于所述平坦层上且具有暴露所述阳极的像素限定孔的第二像素定义层，所述像素限定孔与对应的彩色光阻层相对；
    设置于暴露出的所述阳极上的OLED功能层；
    设置于所述第二像素定义层和所述OLED功能层上的阴极。
  8. 根据权利要求7所述的WOLED显示器，其中，所述薄膜晶体管包括：
    有源层，设置于所述第二基板的面向所述反射膜层的表面上；
    第一绝缘层，设置于所述有源层上；
    栅极，设置于所述第一绝缘层上；
    第二绝缘层，设置于所述栅极、所述有源层和所述基板上；
    源极和漏极，设置于所述第二绝缘层上且分别贯穿所述第二绝缘层以与所述有源层连接；
    其中，所述平坦层设置于所述源极、所述漏极和所述第二绝缘层上，所述阳极贯穿所述平坦层以与所述漏极连接。
  9. 根据权利要求7所述的WOLED显示器，其中，所述OLED功能层从所述阳极到所述阴极顺序包括：空穴发生层、空穴传输层、有机发光层、电子传输层、电子注入层。
  10. 根据权利要求7所述的WOLED显示器，其中，所述WOLED显示器还包括：设置于所述阴极上的绝缘保护层。
  11. 根据权利要求7所述的WOLED显示器，其中，所述阴极是透射的，所述阳极是反射的。
  12. 根据权利要求9所述的WOLED显示器，其中，所述阴极是透射的， 所述阳极是反射的。
  13. 根据权利要求7所述的WOLED显示器，其中，所述反射膜层覆盖在所述第一像素定义层的上表面和侧表面上，所述上表面为所述第一像素定义层的背向所述第一基板的表面，所述侧表面为所述第一像素定义层的由所述上表面延伸至所述彩色光阻层的表面。
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