WO2015025448A1 - シリコンウェーハの熱処理方法 - Google Patents
シリコンウェーハの熱処理方法 Download PDFInfo
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- WO2015025448A1 WO2015025448A1 PCT/JP2014/003416 JP2014003416W WO2015025448A1 WO 2015025448 A1 WO2015025448 A1 WO 2015025448A1 JP 2014003416 W JP2014003416 W JP 2014003416W WO 2015025448 A1 WO2015025448 A1 WO 2015025448A1
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 66
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 64
- 239000010703 silicon Substances 0.000 title claims abstract description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000012298 atmosphere Substances 0.000 claims abstract description 60
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000001301 oxygen Substances 0.000 claims abstract description 53
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 53
- 230000001590 oxidative effect Effects 0.000 claims abstract description 22
- 230000036961 partial effect Effects 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 56
- 229910052799 carbon Inorganic materials 0.000 abstract description 55
- 238000011109 contamination Methods 0.000 abstract description 26
- 230000002829 reductive effect Effects 0.000 abstract description 4
- 150000003376 silicon Chemical class 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 77
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 57
- 229910010271 silicon carbide Inorganic materials 0.000 description 53
- 239000002344 surface layer Substances 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 125000004429 atom Chemical group 0.000 description 13
- 239000012300 argon atmosphere Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 208000032368 Device malfunction Diseases 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/04—Isothermal recrystallisation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
- H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
- H01L21/164—Oxidation and subsequent heat treatment of the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Definitions
- the present invention relates to a heat treatment method for a silicon wafer.
- the surface layer COP is extinguished by heat-treating the surface layer defect (COP) of the silicon wafer in a non-oxidizing atmosphere.
- SiC jigs are often used, and the environment for taking out the heat-treated silicon single crystal wafer (hereinafter simply referred to as “silicon wafer”) contains oxygen and carbonate, which are the sources of carbon contamination of silicon wafers. become.
- a silicon wafer contaminated with carbon forms a defect in a device process and induces a leakage current or the like.
- the contaminated carbon becomes a carbon donor, causing a Vth (threshold voltage) shift of the device and a device malfunction.
- Patent Document 1 discloses forming an oxide layer on a silicon wafer as a measure against carbon contamination of the silicon wafer.
- this method is expected to have a certain effect as a measure against carbon contamination, but the amount of carbon oozing out from the SiC jig by high-temperature oxidation is large, and it is not a measure to suppress the amount of carbon generated from the carbon contamination source itself. It was difficult to reliably control carbon contamination only with countermeasures.
- a thick oxide film is formed on the surface of the heat-treated wafer, an oxide film removal and polishing process is necessary.
- an oxide film is formed at a high temperature, oxygen is injected into the surface layer of the wafer, and the non-annihilated defects in the surface layer portion are enlarged by the supply of oxygen, causing deterioration in electrical characteristics.
- an argon heat-treated wafer for the purpose of eliminating surface layer defects is carbon contamination (eg, SIMS (secondary ion mass spectrometer)) from the SiC jig and the environment (wafer transfer chamber) during the heat treatment. (Measurement value at 3 to 5 ⁇ 10 16 atoms / cm 3 ). Since such carbon contamination adversely affects device characteristics, improvement of carbon contamination is urgent.
- carbon contamination eg, SIMS (secondary ion mass spectrometer)
- the present invention has been made in view of the above problems, and an object thereof is to provide a silicon wafer heat treatment method capable of preventing carbon contamination from the jig and the environment during the heat treatment process.
- a silicon wafer heat treatment method comprising: a heat treatment step; a step of lowering the temperature of the silicon wafer to a temperature at which the silicon wafer can be unloaded from the heat treatment furnace; and a step of unloading the silicon wafer from the heat treatment furnace.
- the first non-oxidizing atmosphere is switched to an oxygen-containing atmosphere, and an oxide film having a thickness of 1 to 10 nm is formed on the surface of the SiC jig in the oxygen-containing atmosphere. And then switching the oxygen-containing atmosphere to a second non-oxidizing atmosphere.
- a second oxygen-containing atmosphere having a lower oxygen partial pressure than the first oxygen-containing atmosphere can be obtained.
- the oxide film formed on the SiC jig can be made more difficult to peel off when switched to the second non-oxidizing atmosphere.
- the oxide film can be formed under the first oxygen-containing atmosphere under heat treatment conditions of a temperature of 800 ° C. or less and a time of 5 minutes or less.
- the thickness of the oxide film formed on the surface of the SiC jig can be more accurately controlled within a desired range.
- the silicon wafer heat treatment method of the present invention can prevent the release of carbon from the SiC jig itself. As a result, carbon contamination of the silicon wafer can be prevented. Thereby, the cause of device malfunction can be removed. Further, since a thick oxide film is not formed on the surface of the silicon wafer, no oxide film removal and polishing steps are required.
- the present inventors examined a method of suppressing the carbon generation amount itself from the carbon pollution source. As a result, it has been found that the use and removal (transfer chamber) environment of the SiC jig affects the carbon content of the surface layer of the heat-treated wafer.
- the present inventors can prevent carbon from being released from the SiC jig itself by forming a dense ultra-thin oxide protective film on the surface of the SiC jig.
- the present inventors have found that carbon contamination of a wafer can be prevented and the present invention has been completed.
- FIG. 1 is a flow chart of the silicon wafer heat treatment method of the present invention.
- FIG. 2 is a graph showing an example of a temperature profile of the silicon wafer heat treatment method of the present invention.
- the silicon wafer is cleaned before heat treatment, and then the silicon wafer is placed on a SiC jig and placed in a heat treatment furnace.
- the heat treatment furnace is not particularly limited, and for example, a known batch heat treatment furnace can be used.
- An example of the heat treatment chamber into which the silicon wafer is charged is a heat treatment chamber made of a quartz tube provided with a loading port.
- the temperature in the furnace at the time of charging is preferably 600 ° C to 800 ° C.
- the SiC jig is a silicon carbide jig (boat).
- a sintered body of SiC, or a carbon base having its surface coated with SiC can be cited.
- the silicon wafer is heat-treated.
- the temperature of the heat treatment furnace is raised in a first non-oxidizing atmosphere.
- the rate of temperature increase is not particularly limited, but is preferably 3 ° C./min to 10 ° C./min, for example.
- hold at a constant temperature is preferably 1100 ° C. to 1200 ° C., for example, and the holding time is preferably 1 minute to 1 hour.
- the temperature of the silicon wafer is lowered to a temperature at which the silicon wafer can be taken out from the heat treatment furnace in the first non-oxidizing atmosphere.
- the temperature lowering rate is not particularly limited, but is preferably 1 ° C./min to 5 ° C./min, for example.
- the temperature at which the material can be carried out is preferably 600 ° C. to 800 ° C., for example.
- Examples of the gas used for forming the first non-oxidizing atmosphere include hydrogen, nitrogen, argon, helium, and a mixed atmosphere selected from these.
- a 100% argon atmosphere is particularly preferable.
- step (d) of FIG. 1 after the temperature is lowered to a temperature at which the wafer can be taken out, and before the wafer is taken out from the quartz tube, the first non-oxidizing atmosphere is switched to the oxygen-containing atmosphere.
- an oxide film having a thickness of 1 to 10 nm is formed on the surface of the SiC jig.
- the thickness of the oxide film formed on the surface of the SiC jig is particularly preferably 2 to 8 nm.
- the thickness of the oxide film is less than 1 nm, the oxide film is not formed on the entire surface, so carbon contamination (contamination with a carbon concentration of 1 ⁇ 10 16 atoms / cm 3 or more as measured by SIMS) occurs on the silicon wafer surface. There is a fear.
- the oxygen-containing atmosphere is first set as the first oxygen-containing atmosphere, as shown in the step (e) of FIG. It can be an atmosphere.
- the oxide film can be formed under a heat treatment condition in a first oxygen-containing atmosphere at a temperature of 800 ° C. or lower and a time of 5 minutes or shorter. Then, it is preferable to hold
- the oxygen concentration is preferably 50 to 100%, and a 100% oxygen atmosphere is particularly preferable.
- a dense ultrathin oxide protective film having a thickness of 1 to 10 nm can be formed on the surface of the SiC jig in a short time.
- the heat treatment condition at a temperature of 800 ° C. or less and a time of 5 minutes or less, preferably a heat treatment condition of a temperature of 600 ° C. or more and 800 ° C. or less and a time of 0.3 minutes or more and 5 minutes or less, the surface of the SiC jig is uniform. An oxide film can be formed, and the thickness of the formed oxide film can be controlled more accurately.
- the second oxygen-containing atmosphere is, for example, a mixed gas of N 2 and O 2 and preferably has an oxygen concentration of 0.1 to 20%, particularly preferably a 0.6% oxygen atmosphere.
- a heat treatment condition of a temperature of 800 ° C. or lower and a time of 10 minutes or shorter, preferably a temperature of 600 ° C. or higher and 800 ° C. or lower, a time of 1 minute or longer and 10 minutes. Maintaining in such a low partial pressure oxygen environment under a heat treatment condition of less than or equal to a minute prevents the ultrathin oxide film formed on the surface of the SiC jig from being volatilized and is more preferable to prevent peeling.
- the SiO 2 film formed on the surface of the SiC jig has higher etching resistance than the natural oxide film (SiOx film) in the heat treatment step in the non-oxidizing atmosphere (argon atmosphere) of the next batch. As a result, it is possible to prevent the carbon of the SiC jig itself from being released from the oxide film. Therefore, the carbon contamination amount of the silicon wafer can be controlled to 1 ⁇ 10 16 atoms / cm 3 or less.
- FIG. 3 is a diagram showing the relationship between the temperature and vapor pressure of each of SiO 2 , SiOx, and Si.
- the vertical axis represents the logarithmic value of vapor pressure (Torr), and the horizontal axis represents the inverse of temperature (1000 / ° K).
- Torr logarithmic value of vapor pressure
- the horizontal axis represents the inverse of temperature (1000 / ° K).
- the void size of the SiO 2 / SiC layer is 0.2 nm or more, and oxygen molecules diffusing in the SiO 2 / SiC layer are bonded to Si atoms at the SiO 2 layer interface or carbon atoms at the SiC layer interface. Dissociate. Oxidized carbon atoms are desorbed from the interface of the SiC layer as CO 2 molecules or CO molecules by thermal motion and diffuse in the SiO 2 layer (SiC (s) + 3 / 2O 2 (g) ⁇ SiO 2 (s) + CO (g)).
- the heat treatment temperature is low (for example, 800 ° C. or less) and oxygen is supplied for a short time, the amount of oxygen diffused to the SiO 2 / SiC interface can be suppressed, and the generation of carbonate in the next heat treatment batch can be suppressed. Can be reduced.
- the second non-oxidizing atmosphere is switched to the second non-oxidizing atmosphere as shown in step (f) in FIG. Underneath, the silicon wafer is taken out of the heat treatment furnace.
- the gas used for forming the second non-oxidizing atmosphere include the same gases as those used in the first non-oxidizing atmosphere.
- a 100% argon atmosphere is particularly preferable.
- the temperature at unloading is preferably 600 ° C to 800 ° C.
- the heat treatment method of the silicon wafer of the present invention by controlling the thickness of the oxide film of the SiC jig to such an extent that it does not volatilize completely in the heat treatment in a high-temperature argon atmosphere of the next batch, In the high-temperature argon heat treatment in the next heat treatment batch, it is possible to prevent carbon from being released from the SiC jig itself, and further to prevent the occurrence of haze due to surface roughness of the silicon wafer. In addition, it is possible to prevent carbon contamination of the silicon wafer in the temperature lowering process and the formation of a thick oxide film on the wafer surface.
- an oxide film with a thickness of 1 to 10 nm is formed on the surface of the SiC jig by heat treatment of a dummy wafer or the like in advance. It is possible to reliably prevent carbon contamination during heat treatment of silicon wafers. By using such a method of the present invention, carbon contamination of the silicon wafer can be further reduced as compared with the conventional heat treatment method for controlling the thickness of the oxide film on the wafer.
- a nitrogen-doped P-type silicon wafer having a diameter of 300 mm (resistivity: 8 to 12 ⁇ cm, oxygen concentration: 15 ppma (JEIDA (Japan Electronics Industry Promotion Association Standard)), nitrogen concentration 5 ⁇ 10 13 atoms / cm 3 ) was prepared.
- the wafer was cleaned before heat treatment and then placed on a SiC jig and placed in a heat treatment furnace at 700 ° C. The temperature was raised to 1200 ° C., heat treatment was performed for 1 hour, and the temperature was lowered to 700 ° C. The temperature rise, hold, and temperature drop were all performed in a 100% argon atmosphere.
- FIG. 4 is a view showing the results of carbon concentration profiles (showing the level of carbon contamination of the wafer surface layer measured by SIMS) in the examples and comparative examples.
- the vertical axis in FIG. 4 indicates the carbon concentration (atoms / cm 3 ) of the surface layer of the silicon wafer, and the horizontal axis indicates the depth ( ⁇ m) from the wafer surface.
- the thickness of the oxide film formed on the surface of the SiC jig is changed by changing the time for switching to the oxygen atmosphere, and the amount of carbon contamination on the wafer surface of the next heat treatment batch is shown in FIGS. As measured by SIMS.
- FIG. 5 is a graph showing the relationship between the depth from the wafer surface and the carbon concentration of the wafer surface layer when an SiC jig having an oxide film formed of 1 nm or 10 nm is used.
- the vertical axis in FIG. 5 represents the carbon concentration (atoms / cm 3 ) of the surface layer of the silicon wafer, and the horizontal axis represents the depth ( ⁇ m) from the wafer surface.
- FIG. 6 is a graph showing the relationship between the oxide film thickness (nm) on the surface of the SiC jig and the maximum value of the carbon concentration (atoms / cm 3 ) in the wafer surface layer.
- the vertical axis of FIG. 6 indicates the maximum value of the carbon concentration (atoms / cm 3 ) in the wafer surface layer, and the horizontal axis indicates the thickness (nm) of the oxide film on the surface of the SiC jig.
- the thickness of the oxide film is 1 to 10 nm, carbon contamination can be prevented.
- FIG. 6 when the oxide film was thinner than 1 nm, a dense oxide film was not formed on the entire surface, and carbon contamination of 1 ⁇ 10 16 atoms / cm 3 or more occurred on the wafer surface. On the other hand, carbon contamination of 1 ⁇ 10 16 atoms / cm 3 or more was confirmed even when the oxide film was thicker than 10 nm.
- the present invention is not limited to the above embodiment.
- the above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.
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Abstract
Description
上記のように、炭素汚染を防ぐことができるシリコンウェーハの熱処理方法が求められている。
SiC(s)+3/2O2(g)→SiO2(s)+CO(g)
直径300mmの窒素ドープP型シリコンウェーハ(抵抗率:8~12Ωcm、酸素濃度:15ppma(JEIDA(日本電子工業振興協会規格))、窒素濃度5×1013atoms/cm3)を用意した。このウェーハに熱処理前洗浄を行ってから、SiC治具に載置して、700℃で熱処理炉内に投入した。1200℃に昇温し、1時間保持する熱処理を行い、700℃まで降温した。昇温、保持、降温は全て100%アルゴン雰囲気で行った。その後100%アルゴン雰囲気から100%酸素雰囲気に切り替え30秒間酸素を供給し、その後0.6%酸素雰囲気下にて約10分間パージしてから100%アルゴン雰囲気に切り替え、100%アルゴン雰囲気下にてウェーハを取り出した。
これによりSiC治具に約1.2nmの酸化膜を形成した。このとき、ウェーハ表面には均一な酸化膜(約2nm)が形成され、ヘイズは発生していなかった。また、このとき、ウェーハ表面の酸化膜が薄いため、特許文献1のような酸化膜除去工程は必要ない。
上記実施例とウェーハの投入から搬出までの工程をすべてアルゴン雰囲気下で行った以外は実施例と同じ条件で行った比較例について炭素濃度分析を行った。図4は実施例と比較例の炭素濃度プロファイル(SIMSで測定したウェーハ表層の炭素汚染のレベルを示す。)の結果を示す図である。図4の縦軸は、シリコンウェーハの表層の炭素濃度(atoms/cm3)を示し、横軸は、ウェーハ表面からの深さ(μm)を示す。
比較例(従来のアニールウェーハ)では、最も炭素濃度の高いところで、4×1016atoms/cm3の炭素を検出しているのに対して、実施例(短時間酸素雰囲気処理を行ったシリコンウェーハ)では、炭素はほぼ検出限界(7×1015atoms/cm3)以下にまで大幅に減少した。これは、アルゴン雰囲気で熱処理中に、SiC治具から雰囲気中への炭素の外方拡散が抑制されたことによると考えられる。
Claims (3)
- SiC治具にシリコンウェーハを載置して熱処理炉内に投入する工程と、
前記熱処理炉内で前記シリコンウェーハを第一の非酸化性雰囲気下にて熱処理する工程と、
前記シリコンウェーハを前記熱処理炉内から搬出可能な温度まで降温する工程と、
前記シリコンウェーハを前記熱処理炉内から搬出する工程とを有するシリコンウェーハの熱処理方法であって、
前記降温工程において、前記搬出可能な温度まで降温した後、前記第一の非酸化性雰囲気を酸素含有雰囲気に切り替え、前記酸素含有雰囲気下にて前記SiC治具の表面に厚さ1~10nmの酸化膜を形成し、その後前記酸素含有雰囲気を第二の非酸化性雰囲気に切り替えることを特徴とするシリコンウェーハの熱処理方法。 - 前記酸素含有雰囲気を、まず第一の酸素含有雰囲気とした後、前記第一の酸素含有雰囲気より酸素分圧の低い第二の酸素含有雰囲気とすることを特徴とする請求項1に記載のシリコンウェーハの熱処理方法。
- 前記酸化膜の形成を、前記第一の酸素含有雰囲気下にて温度800℃以下、時間5分以下の熱処理条件で行うことを特徴とする請求項2に記載のシリコンウェーハの熱処理方法。
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