WO2015016318A1 - 素子製造方法および素子製造装置 - Google Patents
素子製造方法および素子製造装置 Download PDFInfo
- Publication number
- WO2015016318A1 WO2015016318A1 PCT/JP2014/070235 JP2014070235W WO2015016318A1 WO 2015016318 A1 WO2015016318 A1 WO 2015016318A1 JP 2014070235 W JP2014070235 W JP 2014070235W WO 2015016318 A1 WO2015016318 A1 WO 2015016318A1
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- WO
- WIPO (PCT)
- Prior art keywords
- intermediate product
- roller
- lid
- lid member
- light
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 89
- 239000000463 material Substances 0.000 claims abstract description 220
- 239000013067 intermediate product Substances 0.000 claims abstract description 201
- 238000003825 pressing Methods 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims description 187
- 230000007246 mechanism Effects 0.000 claims description 71
- 230000003287 optical effect Effects 0.000 claims description 47
- 230000002093 peripheral effect Effects 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 18
- 230000001678 irradiating effect Effects 0.000 claims description 17
- 239000012466 permeate Substances 0.000 claims description 4
- 230000007723 transport mechanism Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 description 45
- 239000010408 film Substances 0.000 description 41
- 230000004048 modification Effects 0.000 description 33
- 238000012986 modification Methods 0.000 description 33
- 230000008569 process Effects 0.000 description 27
- 238000007740 vapor deposition Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 238000004804 winding Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241000227425 Pieris rapae crucivora Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
Definitions
- the present invention relates to an element manufacturing method and an element manufacturing apparatus for manufacturing an element such as an organic semiconductor element.
- a process for manufacturing an element such as an organic semiconductor element or an inorganic semiconductor element is generally performed in a vacuum environment in order to prevent impurities from entering the element.
- a method for forming a cathode electrode, an anode electrode, or a semiconductor layer on a substrate a film forming technique that is performed in a vacuum environment such as a sputtering method or a vapor deposition method is used.
- the vacuum environment is realized by degassing the inside of the element manufacturing apparatus over a predetermined time using a vacuum pump or the like.
- the element manufacturing process various processes other than the film forming process are performed. Among them, there is a process conventionally performed under atmospheric pressure. On the other hand, in order to realize a vacuum environment, a predetermined time is required as described above. Accordingly, when the element manufacturing process further includes a process performed under atmospheric pressure in addition to a film forming process performed under a vacuum environment, the inside of the element manufacturing apparatus can be degassed, This will increase the time required to replace the internal environment with the atmosphere. For this reason, it is desirable that each manufacturing process of the device is performed in an environment at a pressure lower than atmospheric pressure. As a result, the time and cost required to obtain one element can be reduced.
- Examples of the process other than the film forming process include a removing process for removing the organic semiconductor layer located on the auxiliary electrode as described in Patent Document 1.
- An auxiliary electrode is provided in order to suppress that the voltage drop which generate
- the organic semiconductor layer is generally provided over the entire area of the base material, in order to connect the common electrode to the auxiliary electrode, it is necessary to perform the above-described removal step of removing the organic semiconductor layer on the auxiliary electrode.
- a method of irradiating the organic semiconductor layer with light such as laser light is known.
- the organic semiconductor material constituting the organic semiconductor layer is scattered by ablation, it is preferable to cover the base material with some member so as to prevent contamination by the scattered organic semiconductor material.
- Patent Document 1 first, an opposing base material is superposed on a base material in a vacuum environment to form an overlapping base material, and then the space between the opposing base material and the base material is maintained in a vacuum atmosphere.
- a method has been proposed in which the superposed substrate is taken out into the atmosphere, and then the organic semiconductor layer is irradiated with laser light.
- the opposing base material can be firmly adhered to the base material, thereby reliably preventing contamination by the scattered organic semiconductor material. it can.
- the step of irradiating the organic semiconductor layer with laser light is generally performed sequentially on each of the organic semiconductor layers on the plurality of auxiliary electrodes on the substrate.
- the laser beam is sequentially irradiated onto the organic semiconductor layer on the auxiliary electrode while moving either the optical system for guiding the laser beam toward the substrate or the substrate relative to the other. Therefore, in order to prevent the organic semiconductor material from scattering, it is not necessary to cover the base material with the counter base material over the entire area, and at least a portion of the base material that is irradiated with the laser light may be covered with the counter base material.
- the present invention has been made in consideration of such points, and an object of the present invention is to provide an element manufacturing method and an element manufacturing apparatus that can efficiently cover a portion of a substrate that is irradiated with laser light. To do.
- the present invention is an element manufacturing method for forming an element on a substrate, the step of preparing an intermediate product including the substrate and a plurality of protrusions provided on the substrate; Preparing a lid member having a first surface such that the first surface is directed toward the projection of the intermediate product, and a part of the first surface of the lid member as a part of the intermediate product
- a portion of the lid material on which the curved shape is formed is brought into close contact with a part of the intermediate product.
- the lid member may have the first surface and a second surface on the opposite side of the first surface.
- the lid material pressing step by pressing a part of the second surface of the lid material toward the intermediate product using a lid material pressing mechanism, the first surface of the lid material is pressed. A part may be in close contact with a part of the intermediate product.
- the lid pressing mechanism may include a roller that rotates about a rotation axis.
- the roller presses a part of the second surface of the lid material toward the intermediate product, so that the first surface corresponding to the second surface of the lid material.
- a curved shape along the outer peripheral surface of the roller may be formed on one surface.
- the lid pressing mechanism includes a long pressure film that is conveyed while being held so that a curved portion that is curved so as to protrude toward the lid is formed. You may have.
- the curved portion of the pressure film presses a part of the second surface of the lid member toward the intermediate product, whereby the second portion of the lid member is pressed.
- a curved shape along the curved portion of the pressure film may be formed on the first surface corresponding to the surface.
- the element manufacturing method according to the present invention may further include an irradiation step of irradiating light toward a portion of the lid member where the curved shape is formed.
- an irradiation step of irradiating light toward a portion of the lid member where the curved shape is formed.
- light may pass through a portion of the lid member where the curved shape is formed and reach the intermediate product.
- light may be irradiated from the base material side of the intermediate product toward the lid member that is in close contact with the intermediate product.
- the element manufacturing method according to the present invention further includes an irradiation step of irradiating light toward a portion where the curved shape is formed in the lid member, and the light is fixed with respect to rotation of the roller in the irradiation step.
- the optical product may be guided through the lid material to reach the intermediate product.
- the roller includes a main body portion made of a translucent material that transmits light, the main body portion constitutes the outer peripheral surface of the roller, and in the irradiation step, the light is After passing through the space formed in the interior of the roller, the intermediate product may reach the intermediate product through the main body and the lid of the roller.
- a mask having a plurality of openings is disposed in a space formed inside the roller, and in the irradiation step, the light passes through the openings of the mask and then passes through the openings of the rollers.
- the intermediate product may be transmitted through the main body and the lid.
- the roller includes a main body portion having a space formed therein, and the main body portion constitutes the outer peripheral surface of the roller, and the main body portion includes the outer peripheral surface to the inner space.
- a plurality of through-holes are formed, and in the irradiation step, the light may pass through the through-hole of the main body and then pass through the lid material to reach the intermediate product.
- the element includes the base material, a plurality of first electrodes provided on the base material, an auxiliary electrode provided between the first electrodes, and the protrusion.
- An organic semiconductor layer provided on the first electrode; and a second electrode provided on the organic semiconductor layer and on the auxiliary electrode; and the intermediate product is formed on the substrate and the substrate.
- the organic semiconductor layer provided on the auxiliary electrode may be removed while a portion of the lid material on which the curved shape is formed is in close contact with a part of the intermediate product.
- the present invention is an element manufacturing apparatus for forming an element on a base material, and a transport mechanism for transporting an intermediate product including the base material and a plurality of protrusions provided on the base material.
- a lid material supply mechanism for supplying a lid material having a first surface so that the first surface faces the projection side of the intermediate product; and a part of the first surface of the lid material for the intermediate product
- a lid member pressing mechanism that is in close contact with a part of the lid member, and the first surface of the lid member that is pressed by the lid member pressing mechanism has a curved shape that is curved so as to protrude toward the intermediate product.
- the element manufacturing apparatus is formed, and a portion of the lid member where the curved shape is formed is in close contact with a part of the intermediate product.
- the lid member may have the first surface and a second surface on the opposite side of the first surface.
- the lid pressing mechanism presses a part of the second surface of the lid toward the intermediate product, so that a part of the first surface of the lid is a part of the intermediate product. You may stick to.
- the lid member pressing mechanism may include a roller that rotates about a rotation axis.
- a curved shape along the outer peripheral surface of the roller may be formed on the first surface corresponding to the second surface of the lid member pressed by the roller.
- the lid pressing mechanism includes a long pressure film that is conveyed while being held so that a curved portion that is curved so as to protrude toward the lid is formed. You may have.
- the curved portion of the pressure film presses a part of the second surface of the lid member toward the intermediate product, whereby the first surface corresponding to the second surface of the lid member.
- a curved shape along the curved portion of the pressure film may be formed.
- the element manufacturing apparatus may further include an irradiation mechanism that irradiates light toward a portion of the lid member where the curved shape is formed.
- the light may pass through a portion of the lid member where the curved shape is formed and reach the intermediate product. Further, the light may be irradiated from the base material side of the intermediate product toward the lid member that is in close contact with the intermediate product.
- the element manufacturing apparatus further includes an irradiation mechanism that irradiates light toward a portion where the curved shape is formed in the lid member, and the irradiation mechanism transmits light through the lid member and the intermediate member It has an optical system which guides light so that it may reach a product, and the optical system may be fixed to rotation of the roller.
- the roller includes a main body portion that is made of a light-transmitting material that transmits light and has a space formed therein, and the main body portion forms the outer peripheral surface of the roller,
- the irradiation mechanism may be configured such that the light passes through the space formed inside the main body and then reaches the intermediate product through the main body and the lid.
- a mask having a plurality of openings is disposed in a space formed inside the main body, and the irradiation mechanism is configured such that light passes through the openings of the mask and then the light is transmitted to the main body. It may be configured to pass through the part and the lid material to reach the intermediate product.
- the roller includes a main body portion having a space formed therein, and the main body portion constitutes the outer peripheral surface of the roller, and the main body portion has an inner space from the outer peripheral surface to the inner space.
- a plurality of through-holes reaching the intermediate product may be formed, and the irradiation mechanism may be configured such that after the light passes through the through-hole, the light passes through the lid material and reaches the intermediate product.
- the roller may include a first roller and a second roller arranged at intervals in the second direction.
- a portion of the lid member located between the first roller and the second roller is Further, it may have a curved shape along the outer peripheral surface of the first roller and the outer peripheral surface of the second roller.
- the base material can be efficiently covered using a device having a simple configuration.
- FIG. 1 is a longitudinal sectional view showing an organic semiconductor element in an embodiment of the present invention.
- FIG. 2A is a plan view showing an example of a layout of auxiliary electrodes, protrusions, and organic semiconductor layers of the organic semiconductor element shown in FIG.
- FIG. 2B is a plan view showing another example of the layout of the auxiliary electrode, the protrusion, and the organic semiconductor layer of the organic semiconductor element shown in FIG. 1.
- FIG. 2C is a plan view showing an example of a portion to be removed from the organic semiconductor layer on the auxiliary electrode.
- FIG. 2D is a plan view showing an example of a portion to be removed from the organic semiconductor layer on the auxiliary electrode.
- FIG. 3 is a diagram showing an element manufacturing apparatus according to the embodiment of the present invention.
- FIGS. 4 (a) to 4 (g) are diagrams showing a device manufacturing method according to an embodiment of the present invention.
- FIG. 5 is a view showing an intermediate product processing apparatus for removing the organic semiconductor layer on the auxiliary electrode.
- FIG. 6 is a diagram illustrating a state in which the organic semiconductor layer on the auxiliary electrode is removed by using the intermediate product processing apparatus illustrated in FIG. 5.
- FIGS. 7A to 7G are views showing a method for removing an organic semiconductor layer on an auxiliary electrode in a modification of the embodiment of the present invention.
- FIGS. 8A and 8B are diagrams illustrating an example in which the intermediate product processing apparatus is used to deposit a deposition material on a substrate.
- FIG. 9 is a view showing a modification of the optical system arranged in the space inside the roller.
- FIG. 10 is a view showing a modification of the roller.
- FIG. 11 is a view showing a modified example of the roller.
- FIG. 12A is a diagram illustrating an example in which the lid pressing mechanism includes a pressure film.
- FIG. 12B is a diagram illustrating a state in which the lid member is pressed by the pressure film illustrated in FIG. 12A.
- FIG. 13A is a diagram illustrating an example in which the surface of the roller functions as a first surface of a lid member that is in close contact with a part of the intermediate product.
- FIG. 13B is a diagram showing a state where the surface of the roller shown in FIG. 14A is in close contact with a part of the intermediate product.
- 14A and 14B show examples in which light is irradiated from the base material side toward the organic semiconductor layer.
- FIGS. 1 to 6 In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual product.
- the layer configuration of the organic semiconductor element 40 in the present embodiment will be described with reference to FIG.
- a top emission type organic EL element will be described as an example of the organic semiconductor element 40.
- the organic semiconductor element 40 includes a base material 41, a plurality of first electrodes 42 provided on the base material 41, auxiliary electrodes 43 and protrusions provided between the first electrodes 42. A portion 44, an organic semiconductor layer 45 provided on the first electrode 42, and a second electrode 46 provided on the organic semiconductor layer 45 and the auxiliary electrode 43.
- the organic semiconductor layer 45 includes at least a light emitting layer that emits light by recombination of electrons and holes in the organic compound.
- the organic semiconductor layer 45 may further include various layers generally provided in the organic EL element, such as a hole injection layer, a hole transport layer, an electron transport layer, or an electron injection layer.
- a hole injection layer such as a hole injection layer, a hole transport layer, an electron transport layer, or an electron injection layer.
- the first electrode 42 is provided corresponding to each of the organic semiconductor layers 45.
- the first electrode 42 also functions as a reflective electrode that reflects light generated in the organic semiconductor layer 45.
- Examples of the material constituting the first electrode 42 include simple elements of metal elements such as aluminum, chromium, titanium, iron, cobalt, nickel, molybdenum, copper, tantalum, tungsten, platinum, gold, and silver, or alloys thereof. it can.
- the second electrode 46 functions as a common electrode for the plurality of organic semiconductor layers 45.
- the second electrode 46 is configured to transmit light generated in the organic semiconductor layer 45.
- a material constituting the second electrode 46 a metal film thinned to such an extent that light can be transmitted, or an oxide conductive material such as ITO can be used.
- the auxiliary electrode 43 prevents a variation in voltage drop due to a difference in distance from a power source (not shown) to each organic semiconductor layer, thereby suppressing a variation in luminance of a display device using an organic EL element. Is to do. As shown in FIG. 1, each auxiliary electrode 43 is connected to the second electrode 46. Examples of the material constituting the auxiliary electrode 43 include a single element or alloy of the same metal element as that of the first electrode 42. The auxiliary electrode 43 may be made of the same material as the first electrode 42, or may be made of a material different from the first electrode 42.
- the protrusion 44 is made of an insulating material.
- the protrusion 44 is provided between the first electrode 42 and the auxiliary electrode 43.
- the shape of the organic semiconductor layer 45 provided between the protrusions 44 can be appropriately determined.
- a material constituting the protruding portion 44 an organic material such as polyimide or an inorganic insulating material such as silicon oxide can be used.
- the protruding portion 44 is configured to extend along the normal direction of the base material 41. Therefore, when the lid material described later is brought into close contact with the base material 41, a space is provided between the lid material and the base material 41. It can also function as a spacer for ensuring the above.
- the organic semiconductor layer 45 and the second electrode 46 may be continuously provided not only on the first electrode 42 but also on the protrusion 44.
- the organic semiconductor layer 45 emits light when current flows between the first electrode 42 and the second electrode 46.
- the organic semiconductor layer 45 located on the protrusion 44 the organic semiconductor layer 45 is positioned between the first electrode 42 and the second electrode 46. No light emission occurs. 2A and 2B to be described later, the portion of the organic semiconductor layer 45 that emits light, that is, the organic semiconductor layer 45 provided on the first electrode 42 is shown.
- FIG. 2A is a plan view illustrating an example of the layout of the auxiliary electrode 43, the protrusion 44, and the organic semiconductor layer 45.
- the organic semiconductor layer 45 may include a red organic semiconductor layer 45R, a green organic semiconductor layer 45G, and a blue organic semiconductor layer 45B that are arranged in order in a matrix and each have a rectangular shape.
- each of the red organic semiconductor layer 45R, the green organic semiconductor layer 45G, and the blue organic semiconductor layer 45B constitutes a sub-pixel.
- a combination of adjacent organic semiconductor layers 45R, 45G, and 45B constitutes one pixel.
- the auxiliary electrodes 43 are arranged in a grid so as to extend between the organic semiconductor layers 45 arranged in a matrix.
- the protrusion 44 is provided between the organic semiconductor layer 45 and the auxiliary electrode 43 so as to surround the organic semiconductor layer 45 provided on the first electrode 42 from the side. That is, the protrusions 44 are continuously provided along the four sides of the organic semiconductor layer 45 provided on the first electrode 42. Accordingly, it is possible to prevent the scattered organic semiconductor material from reaching the organic semiconductor layer 45 on the first electrode 42 in the step of removing the organic semiconductor layer 45 on the auxiliary electrode 43.
- the auxiliary electrode 43 does not need to be connected to the second electrode 46 over the entire area. That is, it is not necessary to remove all of the organic semiconductor layer 45 on the auxiliary electrode 43 in the removing step described later. Therefore, as shown in FIG. 2B, the protrusions 44 may be provided discontinuously along any of the four sides of the organic semiconductor layer 45. Also in the example shown in FIG. 2B, in the step of removing the organic semiconductor layer 45 on the auxiliary electrode 43 at the position sandwiched by the protrusions 44, the scattered organic semiconductor material is sandwiched at least partially by the protrusions 44. It is possible to prevent reaching the organic semiconductor layer 45 on the first electrode 42 located in the region. Further, by connecting the auxiliary electrode 43 located between the protrusions 44 to the second electrode 46, the voltage drop can be appropriately suppressed.
- the auxiliary electrode 43 is not particularly limited as long as the voltage drop of the second electrode 46 can be appropriately suppressed.
- the auxiliary electrode 43 may be provided along each pixel configured by organic semiconductor layers 45R, 45G, 45B, and 45W corresponding to a plurality of subpixels. That is, the auxiliary electrode 43 is not formed between the organic semiconductor layers 45R, 45G, 45B, and 45W, which are sub-pixels, and one pixel constituted by the organic semiconductor layers 45R, 45G, 45B, and 45W and the other similar ones.
- An auxiliary electrode 43 may be formed between these pixels.
- 2C and 2D show an example in which each pixel further includes a white organic semiconductor layer 45W in addition to the red organic semiconductor layer 45R, the green organic semiconductor layer 45G, and the blue organic semiconductor layer 45B as sub-pixels. ing.
- the arrangement of the location where the auxiliary electrode 43 and the second electrode 46 are connected is not particularly limited.
- the location where the auxiliary electrode 43 and the second electrode 46 are connected is indicated by a dotted line denoted by reference numeral 43x.
- the auxiliary electrode 43 and the second electrode 46 may be discretely connected at a plurality of locations. That is, the organic semiconductor layer 45 on the auxiliary electrode 43 may be discretely removed at a plurality of locations.
- the auxiliary electrode 43 and the second electrode 46 may be connected in a line along the direction in which the auxiliary electrode 43 extends.
- the organic semiconductor layer 45 on the auxiliary electrode 43 may be linearly removed along the direction in which the auxiliary electrode 43 extends.
- FIG. 2D shows an example in which the organic semiconductor layer 45 on the auxiliary electrode 43 is linearly removed along the direction D1 in which the lid member 21 described later is conveyed.
- 2A to 2D show examples in which a plurality of types of organic semiconductor layers 45R, 45G, 45B, and 45W are used as the organic semiconductor layer 45, the present invention is not limited to this.
- all of the organic semiconductor layers 45 constituting the sub-pixels may be configured to generate common white light.
- a color filter or the like can be used as means for color-coding each sub-pixel.
- the environment in which the element manufacturing method is implemented is not particularly limited.
- the element manufacturing method is partially under a vacuum environment.
- the specific pressure in the vacuum environment is not particularly limited as long as the pressure is lower than the atmospheric pressure.
- the internal pressure of the element manufacturing apparatus 10 is 1.0 ⁇ 10 4 Pa or less. It has become.
- FIG. 3 is a diagram schematically showing the element manufacturing apparatus 10.
- the element manufacturing apparatus 10 includes a first electrode forming apparatus 11 that forms a plurality of first electrodes 42 on a base material 41, and an auxiliary electrode formation that forms an auxiliary electrode 43 between the first electrodes 42.
- the device 12, the protrusion forming device 13 that forms the protrusion 44 between the first electrode 42 and the auxiliary electrode 43, and the organic semiconductor layer 45 is formed on the first electrode 42, the auxiliary electrode 43, and the protrusion 44.
- an organic semiconductor layer forming apparatus 14 In the following description, what is obtained by a process using each device 11, 12, 13, 14 may be referred to as an intermediate product 50.
- the element manufacturing apparatus 10 further includes an intermediate product processing apparatus 15 that performs a predetermined process while a lid material described later is in close contact with a part of the intermediate product 50.
- an example in which the intermediate product processing apparatus 15 is configured as a removing apparatus that removes the organic semiconductor layer 45 provided on the auxiliary electrode 43 will be described.
- the intermediate product processing apparatus 15 includes a stage 18, a lid material supply mechanism 20, a lid material pressing mechanism 30, and an irradiation mechanism 25. Each component of the intermediate product processing apparatus 15 will be described later.
- the lid member 21 or the element manufacturing apparatus 10 further includes a second electrode type device 16 that forms the second electrode 46 on the auxiliary electrode 43 and the organic semiconductor layer 45 after the organic semiconductor layer 45 on the auxiliary electrode 43 is removed. ing.
- the element manufacturing apparatus 10 may further include a transport device 17 connected to each of the devices 11 to 16 for transporting the base material 41 and the intermediate product 50 between the devices 11 to 16. Good.
- FIG. 3 classifies each device from a functional viewpoint, and the physical form is not limited to the example shown in FIG.
- a plurality of devices among the devices 11 to 16 shown in FIG. 3 may be physically constituted by one device.
- any of the devices 11 to 16 shown in FIG. 3 may be physically configured by a plurality of devices.
- the first electrode 42 and the auxiliary electrode 43 may be formed simultaneously in one process.
- the first electrode forming device 11 and the auxiliary electrode forming device 12 may be configured as one device.
- a method for manufacturing the organic semiconductor element 40 using the element manufacturing apparatus 10 will be described.
- a metal material layer constituting the first electrode 42 and the auxiliary electrode 43 is formed on the substrate 41 by, for example, a sputtering method, and then the metal material layer is formed by etching.
- the first electrode 42 and the auxiliary electrode 43 described above can be simultaneously formed on the base material 41.
- the step of forming the first electrode 42 and the step of forming the auxiliary electrode 43 may be performed separately.
- the normal line of the base material 41 is interposed between the first electrode 42 and the auxiliary electrode 43 and above the first electrode 42 and the auxiliary electrode 43 by, for example, photolithography.
- a plurality of protrusions 44 extending in the direction are formed.
- a general film forming method such as a vapor deposition method, a CVD method, a printing method, an ink jet method, or a transfer method, the first electrode 42, the auxiliary electrode 43, and the protrusion 44 are formed.
- An organic semiconductor layer 45 is formed thereon.
- An intermediate product 50 including the organic semiconductor layer 45 provided on the electrode 43 and the protrusion 44 can be obtained.
- the first electrode 42 and the auxiliary electrode 43 are formed on the base material 41 before the protrusion 44. For this reason, the first electrode 42 and the auxiliary electrode 43 are partially covered by the protrusion 44.
- the lid member 21 is prepared, and then the first surface 21a of the lid member 21 is brought into close contact with a part of the intermediate product 50 as shown in FIG.
- the organic semiconductor layer 45 provided on the auxiliary electrode 43 is irradiated with light L2 such as laser light, as shown in FIG. .
- the energy of the light L2 is absorbed by the organic semiconductor layer 45, and as a result, the organic semiconductor material constituting the organic semiconductor layer 45 on the auxiliary electrode 43 is scattered. In this way, the organic semiconductor layer 45 on the auxiliary electrode 43 can be removed.
- the organic semiconductor material scattered from the auxiliary electrode 43 adheres to the first surface 21a of the lid member 21, for example, as shown in FIG.
- FIG. 4F is a diagram showing a state where the organic semiconductor layer 45 on the auxiliary electrode 43 has been removed.
- the second electrode 46 is formed on the organic semiconductor layer 45 on the first electrode 42 and on the auxiliary electrode 43.
- the organic semiconductor element 40 including the auxiliary electrode 43 connected to the second electrode 46 can be obtained.
- FIG. 5 the method for bringing the lid material 21 into close contact with a part of the intermediate product 50 and removing the organic semiconductor layer 45 on the auxiliary electrode 43 described with reference to FIGS. This will be described in more detail with reference to FIG. Note that the steps shown in FIGS. 4D and 4E are performed by the intermediate product processing apparatus 15 described above. First, the configuration of the intermediate product processing apparatus 15 will be described in detail with reference to FIG. In FIG. 5, the first direction, the second direction, and the third direction orthogonal to each other are indicated by arrows D1, D2, and D3, respectively.
- the intermediate product processing apparatus 15 includes a stage 18 on which the intermediate product 50 is placed, a lid material supply mechanism 20 that supplies a long lid material 21, and a part of the lid material 21.
- a lid pressing mechanism 30 that is in close contact with a part of the intermediate product 50 and an irradiation mechanism 25 that irradiates light to a portion of the intermediate product 50 where the lid 21 is in close contact are provided.
- Each component of the intermediate product processing apparatus 15 is disposed in a chamber maintained in a vacuum atmosphere. For this reason, the process of removing the organic semiconductor layer 45 on the auxiliary electrode 43 can be performed in a vacuum environment.
- “long” means that the size of the lid 21 in the direction in which the lid 21 is conveyed is at least five times the dimension of the lid 21 in the direction perpendicular to the direction in which the lid 21 is conveyed. It means that
- stage 18 The stage 18 has a mounting surface 18a for supporting the intermediate product 50, and the mounting surface 18a extends in parallel with the first direction D1 and the second direction D2.
- the stage 18 is configured to be movable in a stage moving direction T1 parallel to the first direction D1.
- the intermediate product 50 is placed on the stage 18 so that the plurality of protrusions 44 described above are arranged on the base material 41 along the first direction D1. For this reason, as will be described later, by repeating the movement of the stage 18 along the stage moving direction T1 and the irradiation mechanism 25 irradiating the light toward the intermediate product 50, the first of the intermediate products 50.
- the protrusion 44 of the intermediate product 50 placed on the stage 18 extends along a third direction D3 orthogonal to the first direction D1 and the second direction D2.
- the lid pressing mechanism 30 includes a roller 31 that rotates in the rotation direction R around a rotation axis that extends in a second direction D2 orthogonal to the first direction D1.
- the lid supply mechanism 20 includes a feeding portion that feeds the lid 21 along the feeding direction T ⁇ b> 2 between the roller 31 and the intermediate product 50, and the roller 31 and the intermediate product 50. And a winding unit that winds the lid member 21 after passing through along the winding direction T3.
- the lid member 21 for covering a part of the intermediate product 50 is supplied in a roll-to-roll manner.
- a surface facing the stage 18 side of the surface of the lid member 21 is referred to as a first surface 21a
- a surface on the opposite side of the first surface 21a is referred to as a second surface 21b.
- PET polyethylene terephthalate
- COP cycloolefin polymer
- PP polypropylene
- PE polyethylene
- PC polycarbonate
- the roller 31 of the lid pressing mechanism 30 is configured to rotate in synchronization with the movement of the stage 18. That is, the roller 31 conveys the lid material 21 wound around the roller 31 so that the moving speed of the stage 18 matches the conveyance speed of the lid material 21.
- the roller 31 includes a cylindrical main body 32 and a driving unit for supporting and rotating the main body 32 at a predetermined position.
- the main body portion 32 is a portion constituting an outer peripheral surface of the roller 31, that is, a surface in contact with the lid member 21. Therefore, the outer peripheral surface of the roller 31 and the outer peripheral surface of the main body 32 are synonymous.
- the specific configuration of the drive unit for rotating the main body unit 32 is not particularly limited.
- the main body 32 is made of a translucent material that transmits light, such as glass.
- a space 32 b is formed inside the main body 32.
- the space 32 b is configured to penetrate the main body 32 in the axial direction of the roller 31.
- the irradiation mechanism 25 As shown in FIG. 5, the irradiation mechanism 25 generates a light such as a laser beam and emits the light toward the space 32 b inside the main body 32 of the roller 31, and the space 32 b inside the main body 32. And an arranged optical system 27.
- the optical system 27 guides light so that the light emitted from the light source 26 passes through the main body 32 and the lid member 21 wound around the main body 32 and reaches the intermediate product 50.
- a mirror 27a that can change the traveling direction of light by reflecting the light can be used.
- the light emitted from the light source 26 is indicated by a symbol L1
- the light whose traveling direction is changed by the optical system 27 is indicated by a symbol L2.
- the optical system 27 is fixed with respect to the movement of the stage 18 and the rotation of the roller 31. That is, they are arranged independently from the stage 18 and the roller 31.
- the optical system 27 is configured so that the traveling direction of the light L2 generated by the optical system 27 does not change even when the stage 18 moves or the roller 31 rotates.
- the stage 18 is movable in the first direction D1, and the protrusions 44 of the intermediate product 50 are arranged along the first direction D1. Therefore, even when the optical system 27 is in a stationary state, it is possible to sequentially irradiate the plurality of protrusions 44 or their peripheral portions with light.
- the aim of the optical system 27 is not shifted during the process. Accordingly, it is possible to irradiate light with higher positional accuracy than when irradiating light to a plurality of portions of the intermediate product 50 while moving the light source 26 and the optical system 27.
- the mirror 27a of the optical system 27 is configured to be movable along the rotation axis of the roller 31 in a space 32b inside the main body 32 of the roller 31 as indicated by a dotted arrow M in FIG. It may be. This makes it possible to irradiate an arbitrary part of the intermediate product 50 with light, as will be described later.
- a specific configuration for moving the optical system 27 is not particularly limited. For example, although not shown, the optical system 27 can move along a rail disposed in the space 32 b inside the main body 32. Further, even when the light source 26 and the optical system 27 are in a stationary state, the light source 26 and the optical system 27 are configured to be able to selectively extract light at an arbitrary position in the second direction.
- the portion of the intermediate product 50 that is to be irradiated with light is along the first direction orthogonal to the second direction. It does not have to be lined up. Accordingly, although not shown, the protrusions 44 of the intermediate product 50 do not have to be arranged along the first direction D1.
- the lid member 21 having the first surface 21 a is prepared so that the first surface 21 a faces the protruding portion 44 side of the intermediate product 50.
- the lid material supply step of supplying the lid material 21 between the main body portion 32 of the roller 31 and the intermediate product 50 so that the first surface 21 a of the lid material 21 faces the stage 18 side.
- a lid material pressing step of pressing a part of the lid material 21 toward the stage 18 is performed. Thereby, a part of the first surface 21 a of the lid member 21 is in close contact with a part of the intermediate product 50. Specifically, as shown in FIG.
- a part of the first surface 21 a of the lid member 21 is in close contact with a portion of the intermediate product 50 where the protrusion 44 is provided.
- a curved shape along the outer peripheral surface 32 a of the main body 32 is formed on the first surface 21 a corresponding to the second surface 21 b of the lid member 21 pressed by the main body 32 of the roller 31.
- the portion where the curved shape is formed protrudes toward the stage 18 in the space between the protrusions 44 of the intermediate product 50, for example. Therefore, compared with the case where the first surface 21a of the lid member 21 is flat, the first surface 21a of the lid member 21 can be brought into close contact with the portion of the intermediate product 50 where the protruding portion 44 is provided without a gap.
- the portion of the first surface 21a where the curved shape is formed along the outer peripheral surface 32a of the main body 32 is also referred to as a curved portion 21c.
- “the first surface 21 a corresponding to the second surface 21 b of the lid member 21 pressed by the main body portion 32” is opposite to the second surface 21 b pressed by the main body portion 32. Means the first surface 21a.
- an irradiation step of irradiating the intermediate product 50 with light through the lid member 21 is performed on a portion of the intermediate product 50 that is in close contact with the lid member 21.
- the “part in close contact with the lid member 21” means not only the portion of the protrusion 44 that is in direct contact with the first surface 21 a of the lid member 21 but also the first surface 21 a of the lid member 21. This is a concept including a portion surrounded by the protruding portion 44. Note that it is not necessary to irradiate all the portions of the intermediate product 50 that are in close contact with the lid member 21.
- light is irradiated to a portion of the intermediate product 50 that is in close contact with the lid member 21 and that is provided with the organic semiconductor layer 45 to be removed.
- a state in which the obtained organic semiconductor layer 45 is reached is shown.
- the organic semiconductor layer 45 absorbs the energy of the light L2, the organic semiconductor material constituting the organic semiconductor layer 45 on the auxiliary electrode 43 is scattered as described above.
- the optical system 27 may further include a lens for focusing the light L2 reflected by the mirror 27a on the organic semiconductor layer 45.
- the curved portion 21c is formed on the first surface 21a of the lid member 21, and the lid member 21 is brought into close contact with the intermediate product 50 using the curved portion 21c. Yes.
- the 1st surface 21a of the cover material 21 can be closely_contact
- the organic semiconductor element 40 having high quality can be manufactured at a low cost.
- the organic semiconductor layer 45 on the auxiliary electrode 43 is removed, the light from the irradiation mechanism 25 is stopped. That is, the light irradiation to the intermediate product 50 is stopped.
- FIG. 6 illustrates an example in which a gap is partially formed between the main body portion 32 of the roller 31 and the second surface 21b of the lid member 21 in the portion of the lid member 21 where the light L2 does not pass. It was. However, as long as a part of the lid member 21 can be brought into close contact with the intermediate product 50 by the roller 31, the positional relationship between the lid member 21 and the roller 31 in other parts is not particularly limited. For example, a portion of the lid member 21 through which the light L ⁇ b> 2 does not pass may be in close contact with the main body portion 32 of the roller 31 but not in close contact with the intermediate product 50.
- the stage 18 is moved along the stage moving direction T 1, and the lid member 21 is moved along the rotation direction R of the main body 32 of the roller 31.
- the irradiation mechanism 25 emits light again.
- the light L2 from the irradiation mechanism 25 is again irradiated to the organic semiconductor layer 45 on the auxiliary electrode 43, and thereby the organic semiconductor layer 45 is removed.
- the organic semiconductor layers 45 on the plurality of auxiliary electrodes 43 arranged along the first direction D1 parallel to the stage moving direction T1 can be sequentially removed.
- the organic semiconductor layers 45 on the auxiliary electrode 43 are arranged at equal intervals on the base material 41. Accordingly, the light source 26 of the irradiation mechanism 25 is turned on and off at a constant cycle considering the interval between the auxiliary electrodes 43 and the moving speed of the stage 18, thereby sequentially irradiating the organic semiconductor layer 45 on the auxiliary electrode 43 with light. Also good.
- the optical system 27 of the irradiation mechanism 25 remains stationary as described above. For this reason, according to the present embodiment, it is possible to irradiate light to the intermediate product 50 with high positional accuracy, and thereby, the organic semiconductor layer 45 of the auxiliary electrode 43 can be accurately removed.
- the intermediate product 50 on the moving stage 18 it is possible to cover the intermediate product 50 on the moving stage 18 by using the lid 21 supplied in a roll-to-roll manner. For this reason, the above-mentioned process of removing the organic semiconductor layer 45 on the auxiliary electrode 43 can be performed on the plurality of intermediate products 50 using one roll body around which the lid member 21 is wound. Therefore, an apparatus or process for cutting the lid member 21 for each intermediate product 50 is not necessary, and therefore the apparatus configuration and process can be simplified. Moreover, the waste resulting from the cutting
- the roller 31 is removed.
- the mirror 27a may be moved along the rotation axis. After the mirror 27a is moved, the organic semiconductor layer 45 on the plurality of auxiliary electrodes 43 positioned on a new line can be removed by performing the above-described process again while moving the stage 18.
- a plurality of protrusions 44 are formed on the base material 41.
- the first electrode 42 is formed between the protrusions 44, and the auxiliary electrode 43 is formed on the protrusions 44.
- a plurality of first electrodes 42 insulated from each other by the protrusions 44 and the auxiliary electrodes 43 provided on the protrusions 44 can be obtained.
- the first electrode 42 is formed on the base material 41, then the projection 44 is formed between the first electrodes 42, and then the auxiliary electrode 43 is formed on the projection 44. May be. Thereafter, as shown in FIG.
- an organic semiconductor layer 45 is formed on the first electrode 42, the auxiliary electrode 43, and the protrusion 44.
- the base material 41, the plurality of first electrodes 42 provided on the base material 41, the auxiliary electrode 43 and the protrusion 44 provided between the first electrodes 42, the first electrode 42 and the auxiliary An intermediate product 50 including the organic semiconductor layer 45 provided on the electrode 43 can be obtained.
- the protrusion 44 is formed before the auxiliary electrode 43, so that the protrusion 44 is covered with the auxiliary electrode 43.
- the protrusion 44 does not need to be covered with the auxiliary electrode 43 over the entire upper surface. That is, the upper surface of the protrusion 44 only needs to be at least partially covered by the auxiliary electrode 43.
- the example in which the protrusions 44 are provided in two rows between the first electrodes 42 and the auxiliary electrode 43 is provided between the protrusions 44 has been described. Since the electrodes 43 are provided on the protrusions 44, the protrusions 44 provided between the first electrodes 42 may be in only one row as shown in FIG.
- the roller 31 of the lid member pressing mechanism 30 is used to press a part of the lid member 21 toward the stage 18, thereby the first surface 21 a of the lid member 21.
- a lid material adhesion process is performed in which a part of the lid material is adhered to a part of the intermediate product 50.
- FIG. 7D and FIG. 7E described later the stage 18 on which the intermediate product 50 is placed is omitted.
- a part of the first surface 21a of the lid member 21 is in close contact with the portion of the intermediate product 50 where the protrusions 44 are provided.
- the 1st surface 21a of the cover material 21 is closely_contact
- FIG. 7F is a diagram showing a state where the organic semiconductor layer 45 on the auxiliary electrode 43 on the protrusion 44 is removed.
- the lid member 21 is in close contact with the organic semiconductor layer 45 to be removed.
- the organic semiconductor layer 45 on the auxiliary electrode 43 on the protrusion 44 is made to irradiate the light L 2 without irradiating the light L 2. It is also possible to transfer to the first surface 21a. That is, the curved portion 21 c formed with the curved shape in the lid 21 is brought into close contact with a part of the intermediate product 50, thereby realizing the removal of the organic semiconductor layer 45 provided on the auxiliary electrode 43. it can.
- the second electrode 46 is formed on the organic semiconductor layer 45 on the first electrode 42 and on the auxiliary electrode 43 on the protrusion 44.
- the organic semiconductor element 40 including the auxiliary electrode 43 connected to the second electrode 46 can be obtained.
- the intermediate product processing apparatus 15 is configured as an exposure apparatus
- the example in which the intermediate product processing apparatus 15 is used as a removing apparatus that removes the organic semiconductor layer 45 on the auxiliary electrode 43 is shown.
- the application example of the intermediate product processing apparatus 15 is not particularly limited.
- the intermediate product processing apparatus 15 performs an exposure process of irradiating the exposed layer in the intermediate product 50 with light L2 as exposure light while the lid 21 is in close contact with the intermediate product 50. It may be used as an exposure apparatus.
- the intermediate product processing apparatus 15 irradiates the vapor deposition material 48 with light while the lid 21 is in close contact with the intermediate product 50, and the vapor deposition material 48. May be used as a vapor deposition apparatus for vapor-depositing the material on the substrate 41.
- the vapor deposition material 48 is provided on the first surface 21a of the lid member 21 as shown in FIG. 8A
- the intermediate product 50 includes a base material 41, a plurality of protrusions 44 provided on the base material 41, a first electrode 42 provided between the protrusions 44, have.
- the vapor deposition material 48 evaporates. More specifically, as shown in FIG. 8A, when the vapor deposition material 48 existing at a position facing the first electrode 42 in the vapor deposition material 48 is irradiated with the light L2, the vapor deposition material 48 evaporates.
- a vapor deposition layer 49 can be formed on the first electrode 42 as shown in FIG. Further, the space between the base material 41 and the lid member 21 is appropriately partitioned by the protrusions 44. For this reason, it is possible to prevent the vapor deposition material 48 from being scattered over a wide area in the space between the base material 41 and the lid member 21.
- the method of heating and evaporating the vapor deposition material 48 is not limited to the above.
- a metal thin film that absorbs infrared light is formed between the first surface 21a of the lid member 21 and the organic semiconductor layer 45, and the metal thin film is irradiated with light to heat the metal thin film, thereby vapor deposition.
- the material 48 may be heated.
- the vapor deposition material 48 provided on the first surface 21a of the lid member 21 is hardly directly irradiated with light, but the vapor deposition material 48 can be indirectly heated through the metal thin film. Therefore, the vapor deposition material 48 can be evaporated.
- a magnetic field is generated around the lid member 21 or the lid member 21 of the intermediate product 50 is generated in order to further increase the degree of adhesion of the lid member 21 to the intermediate product 50.
- a magnetic material may be disposed on the opposite side of the lid member 21 so that the lid member 21 is drawn toward the intermediate product 50 by a magnetic force.
- the mirror 27 a of the optical system 27 is configured to be movable along the rotation axis of the roller 31 in the space 32 b inside the main body portion 32 of the roller 31. showed that.
- the specific configuration of the optical system 27 for irradiating the plurality of portions located on the plurality of lines arranged along the second direction D2 is not particularly limited.
- the optical system 27 may include a mask 28 and a light guide plate 29 arranged in the space 32 b of the main body portion 32 of the roller 31.
- the mask 28 has a plurality of openings 28a arranged along the second direction D2.
- Each opening 28a of the mask 28 is arranged so that the light L2 that has passed through each opening 28a is guided to the organic semiconductor layer 45 to be removed, the layer to be exposed, the deposition material 48, or the like of the intermediate product 50.
- the light guide plate 29 can extract the light L1 incident from the end face in the second direction D2 almost uniformly as the light L2 toward the stage 18 at each position along the second direction D2 and guide it to the mask 28. It is configured. Note that various optical elements other than the light guide plate 29 can be used as the optical elements arranged on the upstream side of the mask 28 as long as the light L1 from the light source 26 can be guided to the mask 28 almost evenly. .
- the light L2 guided to the mask 28 passes through each opening 28a of the mask 28 and then passes through the main body 32 and the lid member 21 of the above-described roller 31 and reaches the intermediate product 50. For this reason, the light L2 can be simultaneously irradiated to a plurality of portions of the intermediate product 50 arranged along the second direction D2. Accordingly, it is possible to simultaneously irradiate the plurality of portions arranged along the second direction D2 without moving the mirror 27a as described above. For this reason, the time which a process requires can be shortened. Moreover, since the mirror 27a is not aimed at all due to the movement of the mirror 27a, light can be irradiated with higher positional accuracy.
- the main-body part 32 of the roller 31 was comprised from the translucent material which permeate
- the configuration of the main body 32 of the roller 31 is not particularly limited as long as the light L2 can pass through the curved portion 21c of the lid member 21 and reach the intermediate product 50.
- the body portion 32 has a plurality of through holes 32 c that are arranged along the rotation direction R of the roller 31 and the rotation axis of the roller 31 and reach from the outer peripheral surface 32 a to the internal space 32 b. It may be formed.
- the through holes 32c are arranged so that the light L2 that has passed through each through hole 32c is guided to the organic semiconductor layer 45, the layer to be exposed, the deposition material 48, or the like of the intermediate product 50 to be deleted.
- the optical system 27 of the irradiation mechanism 25 is configured such that the light L2 passes through the cover material 21 and reaches the intermediate product 50 after the light L2 passes through the through hole 32c of the main body 32.
- the optical system 27 includes a mirror that can change the traveling direction of light by reflecting the light, and a lens that focuses the light L ⁇ b> 2 on the organic semiconductor layer 45.
- the lens is configured such that light focused by the lens passes through the through hole 32c.
- the through-hole 32c is formed in the main-body part 32 of the roller 31 like this modification, not only the translucent material which permeate
- a material such as a metal material can also be used.
- selection of the material which comprises the main-body part 32 can be made easy. For example, it becomes possible to select the material of the main body portion 32 in consideration of workability and availability, thereby improving the characteristics of the roller 31 and reducing the cost required for the roller 31. .
- the light source 26 and the optical system 27 can be disposed outside the roller 31. For this reason, the freedom degree of arrangement
- the roller 31 may include a first roller 33 and a second roller 34 that are arranged with an interval in the second direction D2.
- the width direction of the lid member 21 coincides with the direction of the rotation axis of the roller 31, that is, the second direction D2.
- the portion of the lid member 21 located between the first roller 33 and the second roller 34 is a portion that does not contact the outer peripheral surfaces of the rollers 33 and 34.
- the roller 33 is provided on the first surface 21a corresponding to the second surface 21b of the lid member 21 pressed by the rollers 33 and 34.
- 34 is formed with a curved shape along the outer peripheral surface.
- a portion having a curved shape, that is, a curved portion 21 c is also formed on the first surface 21 a of the lid member 21 positioned between the two rollers 34. For this reason, the 1st surface 21a of the cover material 21 can be closely_contact
- the lid member 21 for giving the lid member 21 a predetermined rigidity for example, the lid member 21 is configured using a PET film, and the thickness of the lid member 21 is 50 ⁇ m to 300 ⁇ m. Within the range of.
- an optical system for guiding light to the intermediate product 50 through the curved portion 21 c of the lid member 21 into the space between the first roller 33 and the second roller 34 and the surrounding space. 27 can be arranged. For this reason, it is not necessary to form a space for arranging the optical system 27 inside the first roller 33 and the second roller 34. Moreover, the freedom degree of arrangement
- the lid material pressing mechanism 30 for bringing a part of the first surface 21 a of the lid material 21 into close contact with a part of the intermediate product 50 is the second surface of the lid material 21.
- the example which has the roller 31 which presses a part of 21b toward the intermediate product 50 was shown.
- a curved shape that is curved so as to protrude toward the intermediate product 50 is at least partially formed on the first surface 21a of the lid material 21, and a portion of the lid material 21 in which the curved shape is formed is an intermediate product.
- the specific configuration of the lid member pressing mechanism 30 is not particularly limited.
- the lid pressing mechanism 30 is a long pressure film that is transported while being held so that a curved portion 35 c that is curved so as to protrude toward the lid 21 is formed. 35 may be included.
- FIG. 12A shows a state in which the pressure film 35 unwound from the unwinding part 35s is taken up by the winding part 35t after being conveyed along the pair of guide rollers 35r.
- the pressure film 35 is interposed between the pair of guide rollers 35r.
- FIG. 12B is an enlarged view showing a state in which the lid material 21 is in close contact with the intermediate product 50 by being pressed from the pressure film 35 when the lid material pressing mechanism 30 has the pressure film 35 described above. It is.
- the curved portion 35 c of the pressure film 35 presses a part of the second surface 21 b of the lid 21 toward the intermediate product 50. Accordingly, a curved shape along the curved portion 35 c of the pressure film 35 is formed on the first surface 21 a corresponding to the second surface 21 b of the lid member 21.
- the 1st surface 21a of the cover material 21 can be closely_contact
- the lid material pressing mechanism 30 is configured using the pressure film 35 being conveyed, so that it is conveyed at a synchronized speed as in the case of the present embodiment described above.
- the lid 21 and the intermediate product 50 can be brought into close contact with each other to cover the intermediate product 50.
- various processes, such as the above-mentioned irradiation process, can be implemented with respect to the lid
- the material constituting the pressure film 35, the thickness and the layer structure of the pressure film 35, and the like are selected so that the curved portion 35c described above can be appropriately configured.
- the material constituting the pressure film 35 a material having a higher elastic coefficient than the material constituting the lid member 21 is used.
- the curved portion 35c may be appropriately formed in the pressure film 35 between the pair of guide rollers 35r by making the thickness of the pressure film 35 larger than the thickness of the lid member 21.
- the pressure film 35 may include a pair of films and an interference layer provided between the pair of films.
- the pair of films for example, a pair of PET films each having a thickness in the range of 100 ⁇ m to 500 ⁇ m can be used.
- the gel-form material which has translucency can be used.
- an optical adhesive material having translucency so-called OCA can be used.
- the organic semiconductor material scattered from the auxiliary electrode 43 of the intermediate product 50 adheres to the first surface 21a of the lid member 21. Therefore, in order to manufacture the organic semiconductor element 40 having high quality, it is preferable that the lid member 21 to which the organic semiconductor material is attached is discarded without being reused in the manufacturing process of the organic semiconductor element 40. On the other hand, the organic semiconductor material does not adhere to the pressure film 35. Moreover, as shown to FIG. 12A, the pressurizing film 35 after pressing the lid
- the lid member 21 having the first surface 21a and the second surface 21b is used as a member for covering the intermediate product 50.
- the specific structure of the lid member 21 is not particularly limited as long as the intermediate product 50 can be appropriately covered using the curved shape.
- the surface of the roller 31 may function as the first surface 21 a of the lid member 21 that is in close contact with a part of the intermediate product 50 and covers the intermediate product 50.
- the organic semiconductor layer 45 on the auxiliary electrode 43 is removed by irradiating the light L2 toward the organic semiconductor layer 45 on the auxiliary electrode 43 of the intermediate product 50 covered with the curved shape of the surface of the roller 31. can do.
- the organic semiconductor material scattered from the auxiliary electrode 43 adheres to the surface of the roller 31 and the organic semiconductor layer 45 is formed.
- a cleaning mechanism 36 for cleaning the organic semiconductor layer 45 formed on the surface of the roller 31 may be provided.
- the cleaning mechanism 36 includes an adhesive roll 36a that peels off the organic semiconductor layer 45 on the surface of the roller 31, and a blade 36b that scrapes off the organic semiconductor layer 45 on the surface of the adhesive roll 36a.
- the intermediate product 50 can be continuously covered by the roller 31 having a clean surface.
- the roller 31 may be configured by winding a film. In this case, even if the surface of the roller 31 is contaminated by the organic semiconductor layer 45, the surface of the roller 31 is always kept clean by unwinding and removing the film to which the organic semiconductor layer 45 is attached. be able to. Therefore, the cleaning mechanism 36 for cleaning the surface of the roller 31 can be eliminated.
- the auxiliary electrode 43 is generally composed of a single metal element or an alloy.
- the light L ⁇ b> 2 irradiated toward the lid member 21 that is in close contact with the intermediate product 50 is mainly shielded by the auxiliary electrode 43.
- light having a wavelength that can be absorbed by the auxiliary electrode 43 is used as the light L ⁇ b> 2, thereby heating the auxiliary electrode 43 and thereby heating the organic semiconductor layer 45 on the auxiliary electrode 43.
- the organic semiconductor layer 45 on the auxiliary electrode 43 can be evaporated and adhered onto the first surface 21 a of the lid member 21.
- a material that can absorb the light L2 may be used as the material constituting the auxiliary electrode 43.
- the stage 18 is used as a transport mechanism for transporting the intermediate product 50
- the present invention is not limited to this, and although not shown, the intermediate product 50 may be supplied and transported in a roll-to-roll form. That is, the base material 41 of the intermediate product 50 is elongated, and the first electrode 42, the auxiliary electrode 43, the protrusion 44, the organic semiconductor layer 45, the second electrode 46, and the like of the intermediate product 50 are You may form on the base material 41 extended in elongate shape.
- a mechanism for transporting the intermediate product 50 in the above-described direction T1 a general transport mechanism used in the form of roll-to-roll can be used.
- the organic semiconductor element 40 is an organic EL
- the type of the organic semiconductor element manufactured by the above-described element manufacturing apparatus 10 and the element manufacturing method is not particularly limited.
- organic transistor device known organic semiconductor layers and other components can be used, for example, those described in JP-A-2009-87996.
- organic solar cell device known photoelectric conversion layers composed of organic semiconductor layers and other components can be used, for example, those described in JP2011-151195A Can do.
- the element manufacturing apparatus 10 and the element manufacturing method described above may be applied not only to the manufacture of organic semiconductor elements but also to the manufacture of inorganic semiconductor elements.
- each component of the intermediate product processing apparatus 15 is disposed in a chamber maintained in a vacuum atmosphere. That is, the example in which the step of irradiating the intermediate product 50 with light using the intermediate product processing apparatus 15 is performed in a vacuum environment is shown.
- the present invention is not limited to this, and the step of irradiating the intermediate product 50 with light using the intermediate product processing apparatus 15 may be performed under an environment other than the vacuum environment such as an atmospheric pressure environment.
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Abstract
Description
この場合、前記ローラーは、光を透過させる透光性材料から構成された本体部を含み、前記本体部が、前記ローラーの前記外周面を構成しており、前記照射工程において、光は、前記ローラーの内部に形成されている空間を通った後に前記ローラーの前記本体部および前記蓋材を透過して前記中間製品に到達してもよい。さらに、前記ローラーの内部に形成されている空間には、複数の開口部を有するマスクが配置されており、前記照射工程において、前記光は、前記マスクの前記開口部を通過した後に前記ローラーの前記本体部および前記蓋材を透過して前記中間製品に到達してもよい。
また、前記ローラーは、内部に空間が形成された本体部を含み、前記本体部が、前記ローラーの前記外周面を構成しており、前記本体部には、前記外周面から内部の空間にまで達する複数の貫通孔が形成されており、前記照射工程において、前記光は、前記本体部の前記貫通孔を通過した後に前記蓋材を透過して前記中間製品に到達してもよい。
この場合、前記ローラーは、光を透過させる透光性材料から構成されるとともに内部に空間が形成された本体部を含み、前記本体部が、前記ローラーの前記外周面を構成しており、前記照射機構は、光が前記本体部の内部に形成されている空間を通った後に光が前記本体部および前記蓋材を透過して前記中間製品に到達するよう、構成されていてもよい。さらに、前記本体部の内部に形成されている空間には、複数の開口部を有するマスクが配置されており、前記照射機構は、光が前記マスクの前記開口部を通過した後に光が前記本体部および前記蓋材を透過して前記中間製品に到達するよう、構成されていてもよい。
また、前記ローラーは、内部に空間が形成されたた本体部を含み、前記本体部が、前記ローラーの前記外周面を構成しており、前記本体部には、前記外周面から内部の空間にまで達する複数の貫通孔が形成されており、前記照射機構は、光が前記貫通孔を通過した後に光が前記蓋材を透過して前記中間製品に到達するよう、構成されていてもよい。
図1に示すように有機半導体素子40は、基材41と、基材41上に設けられた複数の第1電極42と、第1電極42間に設けられた補助電極43および突起部44と、第1電極42上に設けられた有機半導体層45と、有機半導体層45上および補助電極43上に設けられた第2電極46と、を備えている。
図3は、素子製造装置10を概略的に示す図である。図3に示すように、素子製造装置10は、基材41上に複数の第1電極42を形成する第1電極形成装置11と、第1電極42間に補助電極43を形成する補助電極形成装置12と、第1電極42と補助電極43との間に突起部44を形成する突起部形成装置13と、第1電極42、補助電極43上および突起部44上に有機半導体層45を形成する有機半導体層形成装置14と、を備えている。以下の説明において、各装置11,12,13,14を用いた工程によって得られるものを中間製品50と称することもある。
以下、図4(a)~(g)を参照して、素子製造装置10を用いて有機半導体素子40を製造する方法について説明する。はじめに、例えばスパッタリング法によって、第1電極42および補助電極43を構成する金属材料の層を基材41上に形成し、次に、金属材料の層をエッチングによって成形する。これによって、図4(a)に示すように、上述の第1電極42および補助電極43を同時に基材41上に形成することができる。なお、第1電極42を形成する工程および補助電極43を形成する工程は、別個に実施されてもよい。
上述の図4(d)(e)を参照して説明した、蓋材21を中間製品50の一部に密着させるとともに補助電極43上の有機半導体層45を除去する方法について、図5および図6を参照してより詳細に説明する。なお図4(d)(e)に示す工程は、上述の中間製品処理装置15によって実施される。はじめに図5を参照して、中間製品処理装置15の構成について詳細に説明する。図5においては、互いに直交する第1方向、第2方向および第3方向がそれぞれ矢印D1、D2およびD3で示されている。
ステージ18は、中間製品50を支持するための載置面18aを有しており、この載置面18aは、第1方向D1および第2方向D2に平行に広がっている。またステージ18は、第1方向D1に平行なステージ移動方向T1において移動可能であるよう構成されている。また中間製品50は、上述の複数の突起部44が第1方向D1に沿って基材41上に並ぶよう、ステージ18に載置されている。このため後述するように、ステージ18をステージ移動方向T1に沿って移動させることと、照射機構25によって中間製品50に向けて光を照射することとを繰り返すことにより、中間製品50のうち第1方向D1に沿って並ぶ複数の突起部44またはその周辺部分に対して順次光を照射することが可能になる。なおステージ18に載置されている中間製品50の突起部44は、第1方向D1および第2方向D2に直交する第3方向D3に沿って延びている。
図5に示すように、蓋材押圧機構30は、第1方向D1に直交する第2方向D2に延びる回転軸を中心として回転方向Rにおいて回転するローラー31を有している。一方、蓋材供給機構20は、図示はしないが、このローラー31と中間製品50との間に向けて繰り出し方向T2に沿って蓋材21を繰り出す繰出部と、ローラー31と中間製品50との間を通った後の蓋材21を巻き取り方向T3に沿って巻き取る巻取部と、を有している。このように本実施の形態においては、中間製品50の一部を覆うための蓋材21が、ロール・トゥー・ロールで供給される。以下の説明において、蓋材21の面のうちステージ18側を向く面を第1面21aと称し、第1面21aの反対側にある面を第2面21bと称する。
図5に示すように、照射機構25は、レーザ光などの光を生成してローラー31の本体部32の内部の空間32bに向けて放射する光源26と、本体部32の内部の空間32bに配置された光学系27と、を有している。光学系27は、光源26から放射された光が、本体部32と、本体部32に巻き付けられている蓋材21とを透過して中間製品50に到達するよう、光を導くものである。光学系27としては例えば、光を反射することによって光の進行方向を変えることができるミラー27aが用いられ得る。図5およびその他の図において、光源26から放射された光が符号L1で示されており、光学系27によってその進行方向が変えられた光が符号L2で示されている。
第2方向の任意の位置で中間製品50に向けて光を照射することが可能である場合、中間製品50のうち光が照射されるべき部分は、第2方向に直交する第1方向に沿って並んでいなくてもよい。従って、図示はしないが、中間製品50の突起部44は、第1方向D1に沿って並んでいなくてもよい。
このように本実施の形態によれば、ローラー31という簡易な構成要素を用いて、中間製品50の一部を蓋材21によって効率良く覆うことができる。このため、高い品質を有する有機半導体素子40を低いコストで製造することができる。
補助電極43上の有機半導体層45が除去されると、照射機構25からの光は停止される。すなわち、中間製品50に対する光の照射が停止される。
上述の本実施の形態において、第1電極42および補助電極43が突起部44よりも先に基材41上に形成される例を示した。しかしながら、これに限られることはなく、突起部44を第1電極42および補助電極43よりも先に基材41上に形成してもよい。このような場合であっても、上述した本実施の形態による密着工程や除去工程を利用することができる。以下、このような例について図7(a)~(g)を参照して説明する。
その後、図7(c)に示すように、第1電極42,補助電極43および突起部44上に有機半導体層45を形成する。このようにして、基材41と、基材41に設けられた複数の第1電極42と、第1電極42間に設けられた補助電極43および突起部44と、第1電極42上および補助電極43上に設けられた有機半導体層45と、を含む中間製品50を得ることができる。なお本変形例においては、補助電極43よりも先に突起部44が形成されるため、突起部44が補助電極43によって覆われている。なお突起部44は、その上面が全域にわたって補助電極43によって覆われている必要はない。すなわち突起部44は、その上面が少なくとも部分的に補助電極43によって覆われていればよい。また上述の本実施の形態においては、第1電極42間に2列にわたって突起部44が設けられ、突起部44間に補助電極43が設けられる例を示したが、本変形例においては、補助電極43が突起部44上に設けられるため、図7(c)に示すように第1電極42間に設けられる突起部44は1列のみであってもよい。
また上述の本実施の形態および変形例において、中間製品処理装置15が、補助電極43上の有機半導体層45を除去する除去装置として使用される例を示した。しかしながら、中間製品処理装置15の応用例が特に限られることはない。例えば中間製品処理装置15は、図示はしないが、中間製品50に蓋材21が密着されている間に中間製品50中の被露光層に対して光L2を露光光として照射する露光工程を実施する露光装置として使用されてもよい。
若しくは、中間製品処理装置15は、図8(a)(b)に示すように、中間製品50に蓋材21が密着されている間に蒸着用材料48に光を照射して蒸着用材料48を基材41上に蒸着させる蒸着装置として使用されてもよい。
また上述の本実施の形態および変形例において、光学系27のミラー27aが、ローラー31の本体部32の内部の空間32bにおいてローラー31の回転軸に沿って移動可能であるよう構成されている例を示した。しかしながら、第2方向D2に沿って並ぶ複数のライン上に位置する複数の部分に光を照射するための光学系27の具体的な構成が特に限られることはない。例えば図9に示すように、光学系27は、ローラー31の本体部32の空間32bに配置されたマスク28および導光板29を含んでいてもよい。マスク28は、第2方向D2に沿って並ぶ複数の開口部28aを有している。マスク28の各開口部28aは、各開口部28aを通った光L2が、中間製品50の除去されるべき有機半導体層45や被露光層若しくは蒸着用材料48などに導かれるよう、配置されている。また導光板29は、第2方向D2における端面から入射した光L1を、第2方向D2に沿った各位置においてステージ18に向かう光L2としてほぼ均等に取り出してマスク28へ導くことができるよう、構成されている。なお、光源26からの光L1をマスク28へほぼ均等に導くことができる限りにおいて、マスク28の上流側に配置される光学要素として、導光板29以外にも様々な光学要素を用いることができる。
また上述の本実施の形態および変形例において、ローラー31の本体部32が、光を透過させる透光性材料から構成されている例を示した。しかしながら、光L2が蓋材21の上述の湾曲部分21cを透過して中間製品50に到達することができる限りにおいて、ローラー31の本体部32の構成が特に限られることはない。例えば図10に示すように、本体部32には、ローラー31の回転方向Rおよびローラー31の回転軸の方向に沿って並ぶとともに外周面32aから内部の空間32bにまで達する複数の貫通孔32cが形成されていてもよい。貫通孔32cは、各貫通孔32cを通った光L2が、中間製品50の削除されるべき有機半導体層45や被露光層若しくは蒸着用材料48などに導かれるよう、配置されている。また照射機構25の光学系27は、光L2が本体部32の貫通孔32cを通過した後に光L2が蓋材21を透過して中間製品50に到達するよう、構成されている。例えば光学系27は、光を反射することによって光の進行方向を変えることができるミラーと、光L2の焦点を有機半導体層45にあわせるためのレンズと、を含んでいる。この場合、レンズは、レンズによって絞られた光が貫通孔32cを通るよう、構成されている。
また上述の本実施の形態および変形例において、蓋材21がその幅方向の全域にわたってローラー31に接している例を示した。しかしながら、ローラー31の本体部32の外周面32aに沿った湾曲形状を蓋材21の第1面21aに付与することができる限りにおいて、ローラー31の具体的な形態が特に限られることはない。例えば図11に示すように、ローラー31は、第2方向D2において間隔を空けて並べられた第1ローラー33および第2ローラー34を含んでいてもよい。なお蓋材21の幅方向は、ローラー31の回転軸の方向、すなわち第2方向D2に一致している。
また上述の本実施の形態および変形例においては、蓋材21の第1面21aの一部を中間製品50の一部に密着させるための蓋材押圧機構30が、蓋材21の第2面21bの一部を中間製品50に向かって押圧するローラー31を有する例を示した。しかしながら、蓋材21の第1面21aに、中間製品50に向かって突出するよう湾曲した湾曲形状が少なくとも部分的に形成され、かつ、蓋材21のうち湾曲形状が形成された部分が中間製品50の一部に密着されるようになる限りにおいて、蓋材押圧機構30の具体的な構成が特に限られることはない。
また上述の本実施の形態および変形例においては、第1面21aおよび第2面21bを有する蓋材21が、中間製品50を覆うための部材として用いられる例を示した。しかしながら、湾曲形状を利用して中間製品50を適切に覆うことができる限りにおいて、蓋材21の具体的な構成が特に限られることはない。例えば図13Aおよび図13Bに示すように、ローラー31の表面が、中間製品50の一部に密着して中間製品50を覆う蓋材21の第1面21aとして機能してもよい。この場合、ローラー31の表面の湾曲形状によって覆われている中間製品50の補助電極43上の有機半導体層45に向けて光L2を照射することにより、補助電極43上の有機半導体層45を除去することができる。この場合、補助電極43から飛散した有機半導体材料がローラー31の表面に付着して有機半導体層45が形成される。
また上述の本実施の形態および変形例においては、補助電極43上に設けられた有機半導体層45に向けて、蓋材21側から光L2が照射される例を示した。しかしながら、有機半導体層45を適切に加熱することができる限り、光L2の照射方向が特に限られることはない。例えば図14(a)に示すように、中間製品50の基材41側から、中間製品50に密着している蓋材21に向けて光L2を照射してもよい。ここで一般に補助電極43は、金属元素の単体または合金によって構成されている。従って、中間製品50に密着している蓋材21に向けて照射された光L2は主に、補助電極43によって遮蔽される。この場合、光L2として、補助電極43によって吸収され得る波長の光を用いることにより、補助電極43を加熱し、これによって補助電極43上の有機半導体層45を加熱することができる。この結果、図14(b)に示すように、補助電極43上の有機半導体層45を蒸発させて、蓋材21の第1面21a上に付着させることができる。なお、光L2が予め定められている場合、補助電極43を構成する材料として、光L2を吸収することが可能な材料を用いるようにしてもよい。
また上述の本実施の形態および各変形例において、第1方向D1に並ぶ複数の中間製品50の部分に対して光L2を順次照射するとき、ステージ18はステージ移動方向T1において移動し、一方、照射機構25の光学系27は静止したままである例を示した。しかしながら、これに限られることはなく、第1方向D1に並ぶ複数の中間製品50の部分に対して光L2を順次照射するとき、ステージ18が静止したままであり、光学系27が第1方向D1に沿って移動してもよい。
15 中間製品処理装置
18 ステージ
20 蓋材供給機構
21 蓋材
25 照射機構
26 光源
27 光学系
30 蓋材押圧機構
31 ローラー
35 加圧フィルム
36 洗浄機構
40 有機半導体素子
41 基材
42 第1電極
43 補助電極
44 突起部
45 有機半導体層
46 第2電極
50 中間製品
Claims (24)
- 基材上に素子を形成するための素子製造方法であって、
前記基材と、前記基材上に設けられた複数の突起部と、を含む中間製品を準備する工程と、
第1面を有する蓋材を、前記第1面が前記中間製品の前記突起部側に向くように準備する工程と、
前記蓋材の前記第1面の一部を前記中間製品の一部に密着させる蓋材押圧工程と、を備え、
前記蓋材押圧工程において、前記蓋材の前記第1面には前記中間製品に向かって突出するよう湾曲した湾曲形状が形成されており、かつ、前記蓋材のうち前記湾曲形状が形成された部分が前記中間製品の一部に密着させられる、素子製造方法。 - 前記蓋材は、前記第1面と、前記第1面の反対側にある第2面と、を有し、
前記蓋材押圧工程においては、蓋材押圧機構を用いて前記蓋材の前記第2面の一部を前記中間製品に向かって押圧することにより、前記蓋材の前記第1面の一部が前記中間製品の一部に密着する、請求項1に記載の素子製造方法。 - 前記蓋材押圧機構は、回転軸を中心として回転するローラーを有し、
前記蓋材押圧工程においては、前記ローラーが前記蓋材の前記第2面の一部を前記中間製品に向かって押圧することにより、前記蓋材の前記第2面に対応する前記第1面に、前記ローラーの外周面に沿った湾曲形状が形成されている、請求項2に記載の素子製造方法。 - 前記蓋材押圧機構は、前記蓋材に向かって突出するよう湾曲した湾曲部分が形成されるように保持された状態で搬送される長尺状の加圧フィルムを有し、
前記蓋材押圧工程においては、前記加圧フィルムの前記湾曲部分が前記蓋材の前記第2面の一部を前記中間製品に向かって押圧することにより、前記蓋材の前記第2面に対応する前記第1面に、前記加圧フィルムの前記湾曲部分に沿った湾曲形状が形成されている、請求項2に記載の素子製造方法。 - 前記素子製造方法は、前記蓋材のうち前記湾曲形状が形成された部分に向けて光を照射する照射工程をさらに備える、請求項1乃至4のいずれか一項に記載の素子製造方法。
- 照射工程において、光は、前記蓋材のうち前記湾曲形状が形成された部分を透過して前記中間製品に到達する、請求項5に記載の素子製造方法。
- 照射工程において、光は、前記中間製品の前記基材側から、前記中間製品に密着している前記蓋材に向けて照射される、請求項5に記載の素子製造方法。
- 前記素子製造方法は、前記蓋材のうち前記湾曲形状が形成された部分に向けて光を照射する照射工程をさらに備え、
前記照射工程において、光は、前記ローラーの回転に対して固定されている光学系によって導かれて前記蓋材を透過して前記中間製品に到達する、請求項3に記載の素子製造方法。 - 前記ローラーは、光を透過させる透光性材料から構成された本体部を含み、前記本体部が、前記ローラーの前記外周面を構成しており、
前記照射工程において、光は、前記ローラーの内部に形成されている空間を通った後に前記ローラーの前記本体部および前記蓋材を透過して前記中間製品に到達する、請求項8に記載の素子製造方法。 - 前記ローラーの内部に形成されている空間には、複数の開口部を有するマスクが配置されており、
前記照射工程において、前記光は、前記マスクの前記開口部を通過した後に前記ローラーの前記本体部および前記蓋材を透過して前記中間製品に到達する、請求項9に記載の素子製造方法。 - 前記ローラーは、内部に空間が形成された本体部を含み、前記本体部が、前記ローラーの前記外周面を構成しており、
前記本体部には、前記外周面から内部の空間にまで達する複数の貫通孔が形成されており、
前記照射工程において、前記光は、前記本体部の前記貫通孔を通過した後に前記蓋材を透過して前記中間製品に到達する、請求項8に記載の素子製造方法。 - 前記素子は、前記基材と、前記基材上に設けられた複数の第1電極と、前記第1電極間に設けられた補助電極および前記突起部と、前記第1電極上に設けられた有機半導体層と、前記有機半導体層上および前記補助電極上に設けられた第2電極と、を含み、
前記中間製品は、前記基材と、前記基材上に設けられた複数の前記第1電極と、前記第1電極間に設けられた前記補助電極および前記突起部と、前記第1電極上および前記補助電極上に設けられた前記有機半導体層と、を含み、
前記蓋材のうち前記湾曲形状が形成された部分が前記中間製品の一部に密着している間に、前記補助電極上に設けられた前記有機半導体層が除去される、請求項1乃至11のいずれか一項に記載の素子製造方法。 - 基材上に素子を形成するための素子製造装置であって、
前記基材と、前記基材上に設けられた複数の突起部と、を含む中間製品を搬送する搬送機構と、
第1面を有する蓋材を、前記第1面が前記中間製品の前記突起部側に向くように供給する蓋材供給機構と、
前記蓋材の前記第1面の一部を前記中間製品の一部に密着させる蓋材押圧機構と、を備え、
前記蓋材押圧機構によって押圧されている前記蓋材の前記第1面には、前記中間製品に向かって突出するよう湾曲した湾曲形状が形成されており、かつ、前記蓋材のうち前記湾曲形状が形成された部分が前記中間製品の一部に密着している、素子製造装置。 - 前記蓋材は、前記第1面と、前記第1面の反対側にある第2面と、を有し、
前記蓋材押圧機構が前記蓋材の前記第2面の一部を前記中間製品に向かって押圧することにより、前記蓋材の前記第1面の一部が前記中間製品の一部に密着する、請求項13に記載の素子製造装置。 - 前記蓋材押圧機構は、回転軸を中心として回転するローラーを有し、
前記ローラーによって押圧されている前記蓋材の前記第2面に対応する前記第1面には、前記ローラーの外周面に沿った湾曲形状が形成されている、請求項14に記載の素子製造装置。 - 前記蓋材押圧機構は、前記蓋材に向かって突出するよう湾曲した湾曲部分が形成されるように保持された状態で搬送される長尺状の加圧フィルムを有し、
前記加圧フィルムの前記湾曲部分が前記蓋材の前記第2面の一部を前記中間製品に向かって押圧することにより、前記蓋材の前記第2面に対応する前記第1面に、前記加圧フィルムの前記湾曲部分に沿った湾曲形状が形成されている、請求項14に記載の素子製造装置。 - 前記素子製造装置は、前記蓋材のうち前記湾曲形状が形成された部分に向けて光を照射する照射機構をさらに備える、請求項13乃至16のいずれか一項に記載の素子製造装置。
- 光は、前記蓋材のうち前記湾曲形状が形成された部分を透過して前記中間製品に到達する、請求項17に記載の素子製造装置。
- 光は、前記中間製品の前記基材側から、前記中間製品に密着している前記蓋材に向けて照射される、請求項17に記載の素子製造装置。
- 前記素子製造装置は、前記蓋材のうち前記湾曲形状が形成された部分に向けて光を照射する照射機構をさらに備え、
前記照射機構は、光が前記蓋材を透過して前記中間製品に到達するよう光を導く光学系を有し、
前記光学系は、前記ローラーの回転に対して固定されている、請求項15に記載の素子製造装置。 - 前記ローラーは、光を透過させる透光性材料から構成されるとともに内部に空間が形成された本体部を含み、前記本体部が、前記ローラーの前記外周面を構成しており、
前記照射機構は、光が前記本体部の内部に形成されている空間を通った後に光が前記本体部および前記蓋材を透過して前記中間製品に到達するよう、構成されている、請求項20に記載の素子製造装置。 - 前記本体部の内部に形成されている空間には、複数の開口部を有するマスクが配置されており、
前記照射機構は、光が前記マスクの前記開口部を通過した後に光が前記本体部および前記蓋材を透過して前記中間製品に到達するよう、構成されている、請求項21に記載の素子製造装置。 - 前記ローラーは、内部に空間が形成されたた本体部を含み、前記本体部が、前記ローラーの前記外周面を構成しており、
前記本体部には、前記外周面から内部の空間にまで達する複数の貫通孔が形成されており、
前記照射機構は、光が前記貫通孔を通過した後に光が前記蓋材を透過して前記中間製品に到達するよう、構成されている、請求項20に記載の素子製造装置。 - 前記ローラーは、前記第2方向において間隔を空けて並べられた第1ローラーおよび第2ローラーを含み、前記蓋材の前記第2面が前記第1ローラーおよび前記第2ローラーによって押圧されることにより、前記蓋材のうち前記第1ローラーと前記第2ローラーとの間に位置する部分が、前記第1ローラーの外周面および前記第2ローラーの外周面に沿った湾曲形状を有するようになる、請求項20に記載の素子製造装置。
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