WO2015004867A1 - Dispositif à semi-conducteurs pour détecter un rayonnement - Google Patents

Dispositif à semi-conducteurs pour détecter un rayonnement Download PDF

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WO2015004867A1
WO2015004867A1 PCT/JP2014/003355 JP2014003355W WO2015004867A1 WO 2015004867 A1 WO2015004867 A1 WO 2015004867A1 JP 2014003355 W JP2014003355 W JP 2014003355W WO 2015004867 A1 WO2015004867 A1 WO 2015004867A1
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layer
heat
radiation detection
heat dissipation
semiconductor device
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Japanese (ja)
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亮一 増田
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シャープ株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/14652—Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • a radiation detection element and a readout circuit thereof are formed on the same SOI (Silicon ON Insulator) substrate with an insulating film therebetween, and an active element such as a MOS transistor, a resistor, a capacitor, or the like constituting the readout circuit is formed.
  • SOI Silicon ON Insulator
  • an active element such as a MOS transistor, a resistor, a capacitor, or the like constituting the readout circuit is formed.
  • the present invention relates to a semiconductor device for radiation detection equipped with a passive element.
  • Conventional radiation detection elements are for detecting radiation and are used in fields such as nuclear medicine, nuclear power, astronomy, and cosmic ray physics.
  • the radiation includes alpha rays, beta rays, gamma rays, X rays, neutron rays, charged particle rays, and the like.
  • the currently used pixel type radiation detector employs a structure in which the sensor part and the readout circuit part are made as separate chips and mechanically connected by metal bumps. For this reason, this type of pixel-type radiation detector is generally called a hybrid-type pixel detector.
  • One of the problems with this hybrid pixel detector is the connection between the sensor section and the readout circuit section.
  • manufacturing cost and connection reliability are limited, and the size of the metal bump is generally limited to 50 ⁇ m.
  • radiation detection such as S / N and operation speed is affected by the parasitic capacitance between the metal bump and the wiring to the metal bump. The performance as a container is limited.
  • a conventional general pixel detector is connected to a readout circuit chip separated from a radiation detection element chip by bump bonding with solder, lead, indium, or the like.
  • the individual bumps are responsible for the electrical connection between the pixels of a single radiation detection element and the corresponding readout circuit.
  • it is necessary to perform bonding with a very large number of bumps, which increases the thickness and increases the mounting cost.
  • the SOI substrate is a laminated structure in which a thin single crystal silicon layer is formed on a silicon substrate via an insulator layer. From the top of the physical structure, the single crystal silicon on the top of the insulator layer is a thin silicon layer. It is a substrate having a laminated structure of a single crystal silicon layer under an insulator layer which is a layer / insulator layer (silicon oxide film) / thick silicon layer.
  • an electronic circuit is formed on a single crystal silicon layer above the insulator layer, and the single crystal silicon layer below the insulator layer is a simple physical structure (supporting substrate).
  • a radiation detecting element such as a photodiode or an avalanche photodiode is formed in the single-crystal silicon layer portion of the lower thick silicon layer, so that a depletion layer can be formed in the single-crystal silicon layer portion of the lower thick silicon layer.
  • a via hole made of metal wiring is formed in the silicon oxide film (insulator layer) in the center of the structure using a semiconductor process technology, and an electronic circuit configured as a thin silicon layer (single crystal silicon layer) above the insulator layer By connecting the radiation detection element via the via hole, it is possible to realize the integral formation of the radiation detection element and the readout circuit for reading the signal charge detected thereby.
  • the advantage of this method is that bump bonding is not required. Since no mechanical connection such as bump bonding is required for the connection between the sensor and the readout circuit, a smaller pixel size can be realized. In addition, since parasitic capacitance due to bumps is eliminated, higher speed and lower power consumption can be expected. Furthermore, there is a possibility that cost can be reduced by integration on the same substrate. In addition to these, the isolation of the silicon oxide film at the center of the SOI structure between adjacent elements improves the isolation of the elements, eliminates latch-up, and allows the distance between the elements to be reduced. Since the circuit area can be reduced, a CMOS circuit having a complicated signal processing function can be mounted on each pixel. Note that the thickness of the single crystal silicon layer above the insulator layer is preferably about 10 to 100 nm which enables complete depletion of the MOS transistor.
  • the SOI has a configuration in which an insulator layer (silicon oxide film) is sandwiched from above and below by a single crystal silicon wafer, From the top, it is composed of thin single crystal silicon layer / insulator layer / thick single crystal silicon layer.
  • circuit elements such as MOS transistors, resistors, and capacitors are formed on the single crystal silicon layer above the insulator layer, and radiation detection such as photodiodes and avalanche photodiodes are formed on the single crystal silicon layer below the insulator layer. An element is formed.
  • the circuit element formed in the thin single crystal silicon layer has a structure in which the periphery is covered with an insulator such as a silicon oxide film. For this reason, Joule heat generated in the channel formation region of the MOS transistor is dissipated through the insulator layer or the gate insulator, but with respect to the thermal conductivity (about 150 W / mK) of the single crystal silicon. Since the thermal conductivity of silicon oxide film (approximately 1.4 W / mK) and the thermal conductivity of TEOS (tetraethylorthosilicate) used as an interlayer insulating film are as low as 1.2 W / mK, the heat dissipation efficiency of SOI is generally bulky. It is said that it is worse than silicon.
  • FIG. 11 is a cross-sectional view showing a configuration example of a main part of an SOI device disclosed in Patent Document 1.
  • a conventional SOI device 100 has an SOI structure in which a silicon layer (SOI layer) 103 is formed on a silicon support substrate 101 via a silicon oxide film 102 as a first insulating film. .
  • a transistor T1 is formed in the SOI layer 103.
  • a silicon oxide film 104 is formed on the SOI layer 103 to insulate and isolate the semiconductor elements formed thereon.
  • a silicon oxide film 109 as a second insulating film is formed on the SOI layer 103, and aluminum (Al) wirings 105 a and 105 b are formed on the silicon oxide film 109.
  • the wiring 105a that is the first wiring is connected to the source of the transistor T1 via the contact plug 106a that is the first plug of tungsten (W).
  • the wiring 105b is connected to the drain of the transistor T1 through a tungsten contact plug 106b.
  • the transistor T1 is an nMOS transistor, and the wiring 105a is a wiring connected to the ground (Gnd).
  • a metal back metal 107 is formed as a back film.
  • the back metal 107 is connected to the wiring 105a through a heat dissipation plug 108 which is a second tungsten plug.
  • the heat generated in the transistor T1 formed in the SOI layer 103 is transmitted to the heat dissipation plug 108 via the contact plug 106a and the wiring 105a, and is further dissipated from the heat dissipation plug 108 to the back metal 107. Since the back metal 107 has a higher thermal conductivity than the support substrate 101, a higher heat dissipation effect can be obtained than when heat generated in the transistor T1 is released to the support substrate 101. Therefore, the self-heating effect in the SOI device can be suppressed.
  • the back surface metal 107 is not in contact with the lower surface of the transistor T1 formed in the SOI layer 103. That is, the silicon oxide film 102 exists between the transistor T1 and the back metal 107. Therefore, even if the transistor T1 has a source / drain diffusion layer that reaches the lower surface of the SOI layer 103, a short circuit between the source and drain does not occur via the back metal 107.
  • FIG. 12 is a cross-sectional view showing a configuration example of a main part of a semiconductor integrated circuit disclosed in Patent Document 2.
  • a conventional semiconductor integrated circuit 200 includes a plurality of fully depleted SOIs on an SOI substrate 204 in which a buried oxide film 202 is formed on a silicon substrate 201 and a single crystal silicon layer 203 is further formed thereon.
  • a transistor is formed.
  • Each fully depleted MOS transistor is electrically isolated by an isolation oxide film 205 formed by, for example, STI (Shallow Trench Isolation) technology in which a shallow trench is filled with an insulating material to isolate the element.
  • the fully depleted MOS transistor has two source or drain regions 206 and 206 formed on the single crystal silicon layer 203 of the SOI substrate 204 at a predetermined interval, and a gate on the single crystal silicon layer 203 between the source or drain regions 206 and 206.
  • a gate electrode 208 made of, for example, a polysilicon film formed through an oxide film 207 is provided.
  • the fully depleted SOI transistors in regions A and B have a common gate electrode 208.
  • metal wiring layers M1 to M6 are formed in order from the lower layer side.
  • the gate electrode 208 is electrically connected to the lowermost metal wiring layer M1 through the contact layer 210, and further through the via layer 211, the metal It is electrically connected to the wiring layer M2.
  • connection holes and the metal wiring layer constituting the multilayer wiring structure are made of the same conductive material, and are different from the signal transmission connection holes and the metal wiring layer (see region C).
  • Heat conduction portions 212, 213, and 214 that extend to the upper layer side in the path are provided (see regions A, E, and F).
  • the heat generated by the gate operation of the fully depleted SOI transistor is conducted to the contact layer 210, the metal wiring layer M 1, the via layer 211, and the metal wiring layer M 2, and then reaches the maximum through the heat conduction unit 212. Conduction is performed up to the upper metal wiring layer M6, and heat is radiated from the upper surface side of the insulating layer 209. Thereby, the temperature rise of the semiconductor integrated circuit 200 can be reduced.
  • a thin single crystal silicon layer is formed on a thick single crystal silicon layer as a support substrate via an insulator layer made of a silicon oxide film.
  • a semiconductor element such as a MOS transistor formed in a thin single crystal silicon layer has a structure in which the periphery is covered with a silicon oxide film.
  • This silicon oxide film has extremely low thermal conductivity as compared with silicon constituting a thick single crystal silicon layer as a supporting substrate, aluminum, copper used for metal wiring, and the like.
  • the heat generated in the MOS transistor formed in the thin single crystal silicon layer is difficult to escape to the outside, and the temperature of the MOS transistor rises and flows through the current. (Self-heating) will occur.
  • a heat insulating trench and a contact are formed in contact with a thin single crystal silicon layer (SOI layer 103) or a thick single crystal silicon layer (support substrate 101).
  • SOI layer 103 thin single crystal silicon layer
  • support substrate 101 a thick single crystal silicon layer
  • the gate electrode 208 of the fully depleted SOI transistor is connected to the lowermost metal wiring layer M1 through the contact layer 210 and further connected to the metal wiring layer M2 through the via layer 211. Yes.
  • the heat of the gate electrode 208 is conducted from the metal wiring layer M2 to the uppermost metal wiring layer M6 of the heat conducting portion 212 extending to the upper layer side, and is radiated from the upper surface side of the insulating layer 209.
  • Patent Document 1 a hole reaching the thick single crystal silicon layer as the supporting substrate 101 from the thin single crystal silicon layer (SOI layer 103) through the silicon oxide film 104 is formed, and the heat dissipation plug 108 is formed.
  • SOI layer 103 thin single crystal silicon layer
  • the heat dissipation plug 108 is formed.
  • the support substrate is usually used. Since a large number of radiation detection elements consisting of photodiodes and avalanche photodiodes are formed on a thick single crystal silicon layer that is used only as Yes.
  • the present invention solves the above-mentioned conventional problems, and by providing a heat conduction part made of an insulating high heat dissipation material film, specifically a diamond-like carbon film, which can obtain a sufficient heat dissipation effect, heat dissipation efficiency is improved.
  • An object of the present invention is to provide a semiconductor device for radiation detection which has a high heat dissipation structure and can obtain high reliability by suppressing temperature rise.
  • the semiconductor device for radiation detection according to the present invention is an SOI (Silicon ON) in which a first semiconductor layer or a semiconductor substrate is disposed on the lower surface of an insulator layer, and a second semiconductor layer is disposed on the upper surface of the insulator layer.
  • SOI Silicon ON
  • a radiation detection element is formed on the first semiconductor layer or the semiconductor substrate
  • a peripheral circuit element is formed on the second semiconductor layer and its peripheral part, and above the peripheral circuit element
  • a heat dissipation path of a different system different from a signal transmission path connected to at least one of the wiring structures and / or at least one of an upper side and a lower side from the signal transmission path Heat conductive portion of the heat radiation that is connected extends is one which is arranged, the objects can be achieved.
  • the peripheral circuit element in the semiconductor device for radiation detection has a readout circuit element including at least a MOS transistor for processing a signal charge detected by the radiation detection element, and the heat conducting portion for heat dissipation.
  • a conductive portion is disposed.
  • the thermal conductivity of the heat conducting part in the semiconductor device for radiation detection of the present invention is higher than the thermal conductivity of silicon or silicon oxide film.
  • the heat conductivity of the heat conducting part in the semiconductor device for radiation detection of the present invention is 1.2 W / (mK) or more.
  • the heat conducting part in the semiconductor device for radiation detection of the present invention is composed of an insulating high heat dissipation material film.
  • the insulating high heat dissipation material film in the semiconductor device for radiation detection of the present invention is a diamond-like carbon film.
  • the diamond-like carbon film in the semiconductor device for radiation detection of the present invention has an atomic ratio of hydrogen contained in the range from 35% to 40% in order to improve the insulation performance.
  • an opening is formed in the insulating film on the heat conducting portion in the radiation detecting semiconductor device of the present invention.
  • the heat conducting portion includes a gate electrode, a source region, a drain region, and an element isolation region for electrically isolating the MOS transistor element.
  • a signal transmission connection electrode connected to at least one of them and / or a heat radiation path of a different system different from the metal wiring connected to the connection electrode and / or the signal transmission path is connected to extend upward.
  • the peripheral circuit unit includes at least one of a resistor, an inductor, and a capacitor, and the heat conducting unit is connected to at least one of the terminal electrodes.
  • the signal transmission connection electrode and / or the metal wiring connected thereto are connected to another heat dissipation path or / and extending upward from the signal transmission path.
  • the heat conducting section in the semiconductor device for radiation detection of the present invention is connected for each functional block via a connection electrode for signal transmission and / or a metal wiring connected to the connection electrode.
  • the heat conducting unit has a heat dissipation capacity corresponding to the heat capacity of the MOS transistor in the functional block.
  • the heat conducting portion in the semiconductor device for radiation detection according to the present invention is disposed on the entire surface of the chip or a partial surface of the chip.
  • the MOS transistor in the semiconductor device for radiation detection of the present invention is a partially depleted SOI transistor.
  • the radiation detection element and the readout circuit are integrally formed on the SOI structure in the radiation detection semiconductor device of the present invention.
  • the radiation detection semiconductor device in which the radiation detection element and the readout circuit are integrally formed on an SOI structure in the radiation detection semiconductor device of the present invention, wherein the radiation detection element has the SOI structure. It is comprised so that a radiation can be detected with respect to the direction in which a radiation injects from any one of the surface and back surface.
  • the present invention has an SOI (Silicon ON Insulator) structure in which a first semiconductor layer or a semiconductor substrate is disposed on the lower surface of the insulator layer, and a second semiconductor layer is disposed on the upper surface of the insulator layer.
  • the radiation detection element is formed on the first semiconductor layer or the semiconductor substrate
  • the peripheral circuit element is formed on the second semiconductor layer and its peripheral portion
  • the wiring structure connected to the peripheral circuit element is formed above the peripheral circuit element.
  • signal transmission connected to at least one of the first semiconductor layer or the semiconductor substrate, the radiation detecting element, the second semiconductor layer, the peripheral circuit element, and the wiring structure.
  • a heat conduction part for heat dissipation is provided which extends from and is connected to at least one of the upper side and the lower side from a different heat dissipation path and / or signal transmission path different from the path. It is.
  • a heat conduction part consisting of an insulating high heat dissipation material film, specifically a diamond-like carbon film, which provides a sufficient heat dissipation effect, it has a heat dissipation structure with high heat dissipation efficiency and suppresses temperature rise Thus, high reliability can be obtained.
  • a heat conducting portion made of an insulating high heat dissipation material film, specifically a diamond-like carbon film, which can obtain a heat dissipation effect, it has a heat dissipation structure with high heat dissipation efficiency.
  • high reliability can be obtained by suppressing the temperature rise.
  • FIG. 1 It is sectional drawing which shows the principal part structural example in the semiconductor device for radiation detection of Embodiment 1 of this invention. It is a longitudinal cross-sectional view which shows typically the example of a principal part structure of a photodiode as a single example of the radiation detection element of FIG. It is a longitudinal cross-sectional view which shows typically the example of a principal part structure of the avalanche photodiode as another single example of the radiation detection element of FIG. It is the figure which showed the relationship of the multiplication factor with respect to the bias voltage (V) of an avalanche photodiode using the ambient temperature of an avalanche photodiode as a parameter.
  • V bias voltage
  • (A) And (b) is sectional drawing which shows each heat dissipation structural example of the source region of a MOS transistor in the read-out circuit of the semiconductor device for radiation detection of Embodiment 5 of this invention
  • (c) is the MOS It is sectional drawing which shows each heat dissipation structural example of the element isolation area
  • FIG. 10 is a cross-sectional view showing an example of a configuration of a main part of an SOI device disclosed in Patent Document 1.
  • FIG. FIG. 10 is a cross-sectional view showing a configuration example of a main part of a semiconductor integrated circuit disclosed in Patent Document 2.
  • FIG. 1 is a cross-sectional view showing a configuration example of a main part of a semiconductor device for radiation detection according to Embodiment 1 of the present invention.
  • a radiation detecting semiconductor device 20 having an SOI structure includes an insulator layer 2 and a first semiconductor layer (or semiconductor) disposed on the lower surface of the insulator layer 2 as an SOI structure.
  • a radiation detection element 5 such as a photodiode or an avalanche photodiode is formed on the thick single crystal silicon layer 3 having the SOI structure.
  • the thin single crystal silicon layer 4 having the SOI structure is connected to the metal wiring 9 (by the contact electrodes 6 and 10 as connection electrodes made of tungsten W or the like having good embedding properties formed in the insulator layer 2 and the interlayer insulating layer 7.
  • a readout circuit 8 is formed as a peripheral circuit for reading out signal charges detected by the radiation detection element 5 to the thin single crystal silicon layer 4 side through the metal wiring) and processing such as amplification.
  • the read circuit 8 has at least one of an active element such as a MOS transistor and a passive element such as a resistor, a capacitor, and an inductor as a read circuit element as a peripheral circuit element.
  • the readout circuit 8 is a circuit that reads out signal charges detected by the radiation detection element 5 from the contact electrode 6 through the metal wiring 9 and further through the contact electrode 10 and performs processing such as amplification.
  • the read circuit 8 has a CMOS circuit constituted by a series circuit of a P channel MOS transistor and an N channel MOS transistor.
  • This SOI structure has a structure in which an insulator layer 2 made of a silicon oxide film or the like is sandwiched from above and below by a single crystal silicon wafer. From the bottom of the physical structure, a thick single crystal silicon layer 3 / insulator layer 2 / It is composed of a thin single crystal silicon layer 4.
  • a semiconductor device such as a MOS transistor as a peripheral circuit element constituting a peripheral circuit such as a readout circuit 8 and the like in the thin single crystal silicon layer 4 on the upper surface of the insulator layer 2 and the interlayer insulating layer 7 thereon are provided.
  • Thin contact electrodes 10 and 10A having a via diameter of about 0.1 to 0.3 ⁇ m made of metal wiring 9 (metal wiring) such as aluminum Al and the like, and tungsten W having good embedding properties are formed to connect the respective parts.
  • the radiation detection element 5 is formed on the single crystal silicon layer 3 on the lower surface side of the insulator layer 2.
  • the single crystal silicon layer 3 on the lower surface side of the insulator layer 2 has a simple physical structure.
  • a depletion layer is formed in the lower single crystal silicon layer 3 by forming a radiation detection element 5 such as a photodiode or an avalanche photo diode in the thick single crystal silicon layer 3 on the lower surface side of the insulator layer 2. Then, a via hole is formed in the insulator layer 2 such as a silicon oxide film layer in the center of the SOI structure by using a semiconductor process technique, and tungsten W having a good embedding property is buried in the via hole, thereby connecting electrodes (contact electrodes 6, 10, 10A). ).
  • a semiconductor circuit element formed on the thin single crystal silicon layer 4 on the upper surface side of the insulator layer 2 and a radiation detection element 5 formed on the lower single crystal silicon layer 3 are connected to the contact electrode 6, the metal wiring 9, and By connecting to each other via the contact electrode 10, the radiation detection element 5 and the readout circuit 8 are integrally formed on the same substrate.
  • the advantage of this method is that the radiation detection element 5 and the readout circuit 8 are integrally formed with the insulator layer 2 interposed therebetween, so that the radiation detection element 5 and the peripheral circuit including the readout circuit 8 are mechanically connected. Therefore, bump bonding with a large size is not required. As described above, since the connection between the radiation detection element 5 (sensor) and the readout circuit 8 does not require a large electrical and mechanical terminal connection such as bump bonding, a smaller pixel size is realized. be able to. Thus, by reducing the circuit area, it is possible to mount a CMOS circuit having a complicated signal processing function in each pixel. The CMOS circuit can be formed in a peripheral circuit including the readout circuit 8.
  • the bump bonding is not necessary, the parasitic capacitance due to the bump electrode is eliminated, so that it is possible to further speed up the signal reading from the radiation detecting element 5 by the reading circuit 8 and to reduce the power consumption. Furthermore, the cost may be reduced by integrating the radiation detection element 5 and the readout circuit 8 (in the same chip) instead of a separate chip.
  • the presence of the insulating film 2 such as a silicon oxide film at the center of the SOI structure between the adjacent elements of the radiation detection element 5 and the readout circuit 8 improves the separation between the upper and lower elements, and latches between the elements. Further, the distance between the radiation detection element 5 and the readout circuit 8 can be reduced.
  • the radiation detection element 5 formed on the single crystal silicon layer 3 below the insulator layer 2 performs, for example, when the radiation is incident from the back surface of the SOI substrate, performs photoelectric conversion directly from the radiation to the electrical signal by the photodiode, and performs the SOI substrate.
  • a scintillator made of a composite material that can convert radiation into light (visible light, ultraviolet light, and infrared light) is connected to the chip surface, and an electrical signal is output from the light with a photodiode or avalanche photodiode. Indirect photoelectric conversion may be performed.
  • the light shielding metal 11 is formed on the surface side of the interlayer insulating film 7 directly above the read circuit 8 so as to suppress unnecessary light from entering the read circuit 8 from the outside. Good.
  • a scintillator may be connected to the back of the chip to indirectly perform photoelectric conversion from light to an electrical signal.
  • a back electrode 14 is formed on the back surface of the lower single crystal silicon layer 3.
  • the radiation detection element 5 includes the front and back surfaces of the SOI structure. The radiation can be detected in the direction in which the radiation enters from any one of the surfaces.
  • FIG. 2 is a longitudinal sectional view schematically showing an example of the configuration of the main part of a photodiode as a single case of the radiation detection element 5 of FIG.
  • a photodiode 51 has a PIN diode structure, and a P-type semiconductor layer 51b and an N-type semiconductor layer 51c are arranged on the upper and lower surfaces of the intrinsic semiconductor substrate 51a.
  • a front surface electrode 51d is disposed with the central portion of the P-type semiconductor layer 51b open, and a back surface electrode 51e is disposed on the N-type semiconductor layer 51c.
  • the central portion of the P-type semiconductor layer 51b is opened so that light can enter, and no electrode is formed on the light receiving surface.
  • FIG. 3 is a longitudinal sectional view schematically showing an example of the configuration of the main part of an avalanche photodiode as another single case of the radiation detection element 5 of FIG.
  • an avalanche photodiode 52 has an n ⁇ region 52b provided on the surface of a semiconductor substrate 52a, and a p-type region 52c provided in a predetermined range from the surface side to the center in the n ⁇ region 52b.
  • a p-region 52d is provided so as to surround and cover the periphery.
  • a protective film 52e is formed on the surface side of n-region 52b, P-type region 52c, and p-region 52d.
  • a light shielding metal 52f is formed on the protective film 52e so as to open on the P-type region 52c.
  • the P-side electrode 52g is provided so as to be connected to the central portion of the P-type region 52c through the contact layer 52h, and the N-side electrode 52i is provided on the back surface of the semiconductor substrate 52a.
  • the peripheral circuit element formed in the thin single crystal silicon layer 4 is covered with an insulator such as a silicon oxide film.
  • the Joule heat generated in the channel formation region of the MOS transistor is dissipated through the insulator layer 2 and the gate insulating film, but the thermal conductivity of the single crystal silicon (about 150 W / mK), the thermal conductivity (about 1.4 W / mK) of the silicon oxide film is remarkably small.
  • the heat dissipation efficiency is considered to be extremely poor compared to bulk silicon. For this reason, in the SOI structure radiation detection semiconductor device 20, heat generated in the MOS transistor, the radiation detection element 5, and the like constituting the readout circuit 8 causes so-called self-heating (self-heating) that is difficult to escape to the outside. .
  • each upper side of the thick single crystal silicon layer 3, the radiation detection element 5, and the peripheral circuit element including the MOS transistor comprising a signal transmission metal wiring layer (first layer and second layer metal wiring 9) and connection holes (contact electrodes 10 connecting them) constituting the wiring structure of Heat radiation can be promoted by providing the heat conductive portion 11 on the upper surface of the interlayer insulating film 7 connected via the contact electrodes 10A extending from the second-layer metal wiring 9 to the upper layer side.
  • the signal transmission metal wiring layer (the first and second metal wirings 9) and the connection hole (the contact electrode 10 connecting them) constituting the wiring structure above the diffusion layer 13 are insulated from each other.
  • a metal wiring layer (1) that forms a wiring structure extending to the upper side of the thick single crystal silicon layer 3 and the thin single crystal silicon layer 4 in a different heat dissipation path different from the path to the terminal 12 on the upper surface of the film 7 By providing the heat conduction part 11 on the upper surface of the interlayer insulating film 7 from the metal wiring 9 of the second and second layers) and the connection holes (contact electrodes 10A connecting them), it becomes possible to promote heat dissipation. ing.
  • the diffusion layer 13 is provided on the surface of the thick single crystal silicon layer 3, one end of the contact electrode 10 is connected to the surface of the diffusion layer 13, and the other end penetrates the insulator layer 2 and the single crystal silicon layer 4.
  • the first layer metal wiring 9 Connected to the first layer metal wiring 9, and the first layer metal wiring 9 extends upward through another contact electrode 10 and further through the second layer metal wiring 9 and is connected to the upper surface of the interlayer insulating film 7. Electrically connected to the terminal 12, a potential fixing voltage is applied from the terminal 12 to the diffusion layer 13.
  • one end of a heat dissipation contact electrode 10A is connected to the surface portion of the lower thick single crystal silicon layer 3, and the other end is connected to the first layer of metal wiring 9 and another layer of heat dissipation via another contact electrode 10A.
  • One end of a heat dissipation contact electrode 10A is connected to the surface portion of the upper single crystal silicon layer 4 and the other end is connected to the first metal wiring 9 and another contact for heat dissipation. It is connected to the second level metal wiring 9 through the electrode 10A.
  • Heat radiation can be promoted by connecting to the heat conduction portion 11 on the upper surface of the interlayer insulating film 7 through each contact electrode 10A extending from the second-layer metal wiring 9 to the upper layer side.
  • the thermal conductivity of the heat conducting part 11 should be higher than the thermal conductivity of silicon or silicon oxide film, and preferably has an insulating property. By doing in this way, heat dissipation efficiency can be improved. Further, the thermal conductivity of the heat conducting unit 11 of the first embodiment is desirably 1.2 W / (mK) or more, and more desirably 1.5 W / (mK) or more. By doing in this way, heat dissipation efficiency can be improved further.
  • the heat conducting part 11 is composed of a diamond-like carbon film
  • other materials may be used.
  • the thermal conductivity of the diamond-like carbon film is 30 W / (mK) to 500 W / (mK)
  • the heat dissipation efficiency can be further improved.
  • Diamond-like carbon is characterized by a high heat release rate because heat is released by lattice vibration during heat generation.
  • the heat conducting portion 11 is not limited to a diamond-like carbon single layer as long as it has a higher thermal conductivity than silicon or a silicon oxide film, and other thin films of different materials from the diamond-like carbon thin film. At least one layer may be provided, and the heat dissipation performance can be adjusted according to the application by changing the film thickness of each layer, the content ratio of the material constituting each film, and the distribution thereof.
  • the insulating high heat dissipation material film made of diamond-like carbon preferably has an atomic ratio of hydrogen of 35% or more and 40% or less in consideration of insulation performance.
  • This diamond-like carbon is an insulator, and even on the same path connected to the metal wiring layer for signal transmission (the first and second metal wirings 9) and the connection hole (the contact electrode 10 connecting them). Does not adversely affect signal transmission such as short circuit. For this reason, the signal wiring (first-layer and second-layer metal wiring 9) may be used as it is, and in this case, an increase in layout area can be suppressed.
  • the metal wiring layer may be a dummy metal that is not used as an electrical wiring, and is a dedicated metal wiring layer provided for connection to the heat conducting section 11 as shown in FIG. May be.
  • the semiconductor device 20 for radiation detection a large number of radiation detection elements 5 made of photodiodes and avalanche photodiodes are formed in the thick single crystal silicon layer 3 that is usually used only as a support substrate. Heat generated by the radiation detection element 5 in addition to the MOS transistor of the readout circuit 8 cannot be ignored. The same problem occurs in the photodiode, but particularly when an avalanche photodiode having a high gain is used, the multiplication factor with respect to the bias voltage of the avalanche photodiode greatly fluctuates due to the influence of temperature rise due to heat generation. This is shown in FIG.
  • FIG. 4 is a diagram showing the relationship of the multiplication factor with respect to the bias voltage (V) of the avalanche photodiode using the ambient temperature of the avalanche photodiode as a parameter.
  • the light reception intensity of the avalanche photodiode and the output level of the electric signal output from the avalanche photodiode are in a proportional relationship, and the multiplication factor determines the proportionality constant of the proportional relationship.
  • the avalanche photodiode can increase the multiplication factor by applying a high bias voltage such as 70 V or higher, and can obtain high light receiving sensitivity. Therefore, the avalanche photodiode can detect weak light and radiation.
  • the radiation detecting element 5 is suitable for the above.
  • avalanche photodiodes have the following problems.
  • the relationship between the bias voltage of the avalanche photodiode and the multiplication factor is as shown by a solid line T0 in FIG. 4 when the ambient temperature of the avalanche photodiode is 0 degrees Celsius, and the ambient temperature of the avalanche photodiode is 25 degrees Celsius.
  • the temperature is about 60 degrees Celsius
  • the relationship is as shown by a solid line T80 in FIG. 4.
  • the ambient temperature of the avalanche photodiode is 80 degrees Celsius
  • the relationship is as shown by a solid line T80 in FIG.
  • the multiplication factor with respect to the bias voltage set by the avalanche photodiode greatly varies. For this reason, if a constant bias voltage is applied to the avalanche photodiode without considering the variation in the ambient temperature, the multiplication factor of the avalanche photodiode varies due to the variation in the ambient temperature, and output from the avalanche photodiode. There arises a problem that the output level of the electric signal fluctuates.
  • the influence can be suppressed by adopting an insulating material higher than the thermal conductivity of silicon or silicon oxide film for the heat conducting portion 11.
  • the breakdown voltage necessary for passing a constant current hardly changes with time, and is effective for extending the device life.
  • the radiation detection element 5 the deterioration of element characteristics due to the temperature rise of the MOS transistor and the passive element formed in the thin single crystal silicon layer 4 is suppressed, which is effective in extending the element life.
  • the first semiconductor layer 3 (or the semiconductor substrate) is disposed on the lower surface of the insulator layer 2, and the second semiconductor layer 4 is disposed on the upper surface of the insulator layer 2.
  • the radiation detection element 4 is formed on the first semiconductor layer 3 (or the semiconductor substrate), and the readout circuit 8 serving as a peripheral circuit element is read on the second semiconductor layer 4 and its peripheral portion.
  • a heat conduction part 11 that is a heat-dissipating insulating high heat-dissipating material film that extends upward from a heat dissipation path or a signal transmission path of a different system different from the signal transmission path connected to one another is disposed. .
  • an insulating high heat dissipation material film capable of obtaining a sufficient heat dissipation effect, specifically, a heat conducting portion 11 made of a diamond-like carbon film is provided for heat dissipation, thereby having a heat dissipation structure with high heat dissipation efficiency, The rise can be suppressed and high reliability can be obtained.
  • Embodiment 2 In the first embodiment, the case where the heat radiation contact electrode 10A extending to the upper layer side is connected to the heat conduction portion 11 for heat radiation on the upper surface of the interlayer insulating film 7 has been described. In the second embodiment, thick single crystal silicon is used. A case will be described in which a heat radiating heat conducting portion 11 provided on the lower surface side of the thick single crystal silicon layer 3 is connected via a heat radiating contact electrode 10A extending through the layer 3 and extending downward.
  • FIG. 5 is a cross-sectional view showing a configuration example of a main part of the radiation detecting semiconductor device 20A according to the second embodiment of the present invention.
  • members having the same functions and effects as those in FIG. 5 members having the same functions and effects as those in FIG.
  • the radiation detection semiconductor device 20 ⁇ / b> A having the SOI structure according to the second embodiment has an insulator layer 2 and a first semiconductor layer (or semiconductor) disposed on the lower surface of the insulator layer 2 as an SOI structure.
  • a radiation detection element 5 such as a photodiode or an avalanche photodiode is formed on the thick single crystal silicon layer 3 having the SOI structure.
  • the thin single-crystal silicon layer 4 having the SOI structure is exposed to radiation via the metal wiring 9 by the contact electrodes 6 and 10 made of tungsten W or the like having good embeddability formed in the insulator layer 2 and the interlayer insulating layer 7.
  • a readout circuit 8 is formed as a peripheral circuit for reading out signal charges detected by the detection element 5 to the thin single crystal silicon layer 4 side and processing such as amplification.
  • the heat conduction part 11 connected through the extending contact electrode 10A is provided widely on a part of the lower surface of the thick single crystal silicon layer 3 below the insulator layer 2 (the surface other than the back electrode 14) to promote heat dissipation. It is supposed to let you.
  • the thermal conductivity of the heat conducting portion 11 only needs to be higher than the thermal conductivity of silicon or silicon oxide film, and desirably has an insulating property. By doing in this way, heat dissipation efficiency can be improved further. Further, the thermal conductivity of the heat conducting unit 11 is desirably 1.2 W / (mK) or higher or 1.5 W / (mK) or higher. By doing in this way, heat dissipation efficiency can be improved further. Further, the heat conducting part 11 may be composed of a diamond-like carbon film. In particular, since the thermal conductivity of the diamond-like carbon film is about 30 W / (mK) to 500 W / (mK), the heat dissipation efficiency can be further improved.
  • the heat conduction part 11 is not limited to a diamond-like carbon single layer as long as it has a higher thermal conductivity than silicon or a silicon oxide film, but is not limited to a diamond-like carbon thin film and other thin films of different materials.
  • These layers may be provided with at least one layer, and the heat dissipation performance can be adjusted according to the application by changing the film thickness of each layer, the content ratio of the material constituting each film, and its distribution.
  • the insulating high heat dissipation material film made of diamond-like carbon preferably has an atomic ratio of hydrogen contained in the range of 35% to 40% in consideration of insulation performance.
  • Diamond-like carbon is an insulator and does not adversely affect signal transmission such as short circuit even if the same path as the signal transmission metal wiring layer (metal wiring 9) and connection holes (contact electrodes 6, 10) is used.
  • the wiring may be used as it is. In this case, an increase in layout area can be suppressed.
  • the metal wiring layer (metal wiring 9) may be a dummy metal that is not used as an electrical wiring.
  • the metal wiring layer (metal wiring 9) is a dedicated metal circuit provided for connection to the heat conducting unit 11. It may be a metal wiring layer (metal wiring 9).
  • the radiation detection semiconductor device 20A in order to form a large number of radiation detection elements 5 made of photodiodes and avalanche photodiodes in the thick single crystal silicon layer 3 that is normally used only as a support substrate, in addition to the MOS transistors, The heat generated by the radiation detection element 5 cannot be ignored. The same problem occurs in the photodiode. In particular, when an avalanche photodiode having a high gain is used, the multiplication factor with respect to the bias voltage of the avalanche photodiode varies as the radiation detection element 5 due to the influence of temperature rise due to heat generation. End up.
  • the first semiconductor layer 3 (or the semiconductor substrate) is disposed on the lower surface of the insulator layer 2, and the second semiconductor layer 4 is disposed on the upper surface of the insulator layer 2.
  • the radiation detection element 4 is formed on the first semiconductor layer 3 (or the semiconductor substrate), and the readout circuit 8 serving as a peripheral circuit element is read on the second semiconductor layer 4 and its peripheral portion.
  • the first semiconductor layer 3 (or the semiconductor substrate) and the second semiconductor layer 3
  • a heat conducting portion 11 which is an insulating high heat dissipating material film for heat radiation extending downward from a heat radiation path of a different system from the signal transmission path connected to the semiconductor layer 4 via the contact electrode 10A. Is arranged To have.
  • the connection distance from the heat generation source is shortened by connecting the heat conductive portion 11 which is an insulating high heat dissipation material film for heat dissipation to the lower side via the contact electrode 10A. It becomes good.
  • an insulating high heat dissipation material film capable of obtaining a sufficient heat dissipation effect, specifically, a heat conducting portion 11 made of a diamond-like carbon film is provided for heat dissipation, thereby having a heat dissipation structure with high heat dissipation efficiency, The rise can be suppressed and high reliability can be obtained.
  • a heat conducting portion 11 made of a diamond-like carbon film is provided for heat dissipation, thereby having a heat dissipation structure with high heat dissipation efficiency, The rise can be suppressed and high reliability can be obtained.
  • Embodiment 3 In the first embodiment, the case where the heat radiation contact electrode 10A extending to the upper layer side is connected to the heat conduction portion 11 for heat radiation on the upper surface of the interlayer insulating film 7 will be described. In the second embodiment, a thick single crystal silicon layer is used.
  • the heat dissipation contact electrode 10 ⁇ / b> A extending downward through 3 is connected to the heat dissipation thermal conduction portion 11 on the lower surface side of the thick single crystal silicon layer 3.
  • the heat dissipation contact electrode 10A extending to the upper side of the interlayer insulating film 7 is connected to the heat dissipation heat conducting portion 11 on the upper surface of the interlayer insulating film 7 and the heat dissipation contact electrode 10A extending downward through the thick single crystal silicon layer 3 is thickened.
  • a case where the single crystal silicon layer 3 is connected to the heat conducting portion 11 for heat radiation on the lower surface side will be described.
  • FIG. 6 is a cross-sectional view showing a configuration example of a main part of the radiation detecting semiconductor device 20B according to the third embodiment of the present invention.
  • members having the same functions and effects as those in FIG. 6 members having the same functions and effects as those in FIG.
  • the radiation detecting semiconductor device 20B having the SOI structure of the third embodiment has an insulator layer 2 and a first semiconductor layer (or semiconductor) disposed on the lower surface of the insulator layer 2 as an SOI structure.
  • a radiation detection element 5 such as a photodiode or an avalanche photodiode is formed on the thick single crystal silicon layer 3 having the SOI structure.
  • the thin single crystal silicon layer 4 having the SOI structure is formed on the thin single crystal silicon layer 4 from the insulator layer 2 through the metal wiring 9 by the contact electrodes 6 and 10 made of tungsten W or the like having good embeddability formed in the insulator layer 2.
  • a readout circuit 8 is formed as a peripheral circuit for reading out the signal charges detected by the radiation detection element 5 through the crystalline silicon layer 4 and the interlayer insulating layer 7 thereabove and processing such as amplification.
  • the portions 11 are respectively formed on the lower surface side of the single crystal silicon layer 3 below the insulator layer 2 and on the interlayer insulating layer 7 to promote heat dissipation.
  • the thermal conductivity of the heat conducting portion 11 only needs to be higher than the thermal conductivity of silicon or silicon oxide film, and desirably has an insulating property. By doing in this way, heat dissipation efficiency can be improved further. Moreover, it is desirable that the heat conductivity of the heat conducting portion 11 is 1.2 W / (mK) or more or 1.5 W / (mK) or more. By doing in this way, heat dissipation efficiency can be improved further. Further, the heat conducting part 11 may be composed of a diamond-like carbon film. In particular, since the thermal conductivity of the diamond-like carbon film is about 30 W / (mK) to 500 W / (mK), the heat dissipation efficiency can be further improved.
  • diamond-like carbon (DLC) is amorphous, its thermal conduction is not anisotropic and its thermal conduction is isotropic. For example, the heat transfer rate is in the crystal orientation like graphite. Regardless, heat can be dissipated isotropically.
  • Diamond-like carbon (DLC) has a low coefficient of linear thermal expansion of 3 ⁇ 10 ⁇ -6 to 5 ⁇ 10 -6 / K. Therefore, diamond-like carbon (DLC) is suitable as a constituent material of a device having a laminated structure.
  • the surface of the diamond-like carbon film (DLC film) is flatter than that of graphite, the surface unevenness of the diamond-like carbon film (DLC film) in the laminated structure including the diamond-like carbon film (DLC film). It is possible to suppress the occurrence of local stress due to the above.
  • the heat conduction part 11 is not limited to a diamond-like carbon single layer as long as it has a higher thermal conductivity than that of a silicon oxide film, but is not limited to a diamond-like carbon thin film and other thin films different from the material. At least one layer may be provided, and the heat dissipation performance can be adjusted according to the use by changing the film thickness of each layer, the content ratio of the material constituting each film, and the distribution thereof.
  • the atomic ratio of hydrogen contained is 35% or more and 40% or less in consideration of insulating performance.
  • Diamond-like carbon is an insulator, and even if it is used in the same path 22 as the signal transmission metal wiring layer (metal wiring 9) and connection holes (contact electrodes 6, 10), it does not adversely affect signal transmission such as a short circuit.
  • the signal wiring may be used as it is. In this case, an increase in layout area can be suppressed.
  • the metal wiring layer (metal wiring 9) may be a dummy metal that is not used as an electrical wiring, and is connected to the heat conducting portion 11 for heat dissipation as shown in the path 21 of FIG. For this purpose, a dedicated metal wiring 9 and a connection hole (contact electrode 10A) may be provided.
  • the radiation detection semiconductor device 20B a large number of radiation detection elements 5 made of photodiodes or avalanche photodiodes are formed in the thick single crystal silicon layer 3 that is normally used only as a support substrate. Heat generated by the detection element 5 cannot be ignored.
  • a similar problem occurs with a photodiode as the radiation detection element 5, but in particular, when an avalanche photodiode having a high gain is used, the increase in the bias voltage of the avalanche photodiode is affected by the rise in temperature due to heat generation. The magnification will fluctuate.
  • the first semiconductor layer 3 (or the semiconductor substrate) is disposed on the lower surface of the insulator layer 2, and the second semiconductor layer 4 is disposed on the upper surface of the insulator layer 2.
  • the radiation detection element 4 is formed on the first semiconductor layer 3 (or the semiconductor substrate), and the readout circuit 8 serving as a peripheral circuit element is read on the second semiconductor layer 4 and its peripheral portion.
  • the first semiconductor layer 3 (or the semiconductor substrate) and the radiation detection At least of the element 5, the second semiconductor layer 4, the readout circuit element (MOS transistor) of the readout circuit 8 as a peripheral circuit element, and the wiring structure (metal wiring 9 and contact electrodes 6, 10).
  • a heat conduction part which is an insulating high heat radiation material film for each heat radiation extending from and connected to a heat radiation path of a different system different from the signal transmission path connected to any one of them or / and a signal transmission path. 11 is disposed.
  • an insulating high heat dissipation material film capable of obtaining a sufficient heat dissipation effect specifically, a heat conducting portion 11 made of a diamond-like carbon film is provided for heat dissipation, thereby having a heat dissipation structure with high heat dissipation efficiency, The rise can be suppressed and high reliability can be obtained.
  • the gate electrode, the source region, and the drain of the MOS transistor in the peripheral circuit such as the readout circuit 8
  • a heat dissipation configuration example of the region and further the element isolation region will be described.
  • FIG. 7 is a cross-sectional view showing a heat dissipation configuration example of the gate electrode of the MOS transistor in the peripheral circuit such as the readout circuit 8 of the semiconductor device 20C for radiation detection according to the fourth embodiment of the present invention.
  • members having the same functions and effects as those in FIG. 7 members having the same functions and effects as those in FIG.
  • the radiation detection semiconductor device 20 ⁇ / b> C having the SOI structure according to the fourth embodiment has an insulator layer 2 and a first semiconductor layer (or semiconductor) disposed on the lower surface of the insulator layer 2 as an SOI structure.
  • a radiation detecting element 5 such as a photodiode or an avalanche photodiode is formed on the thick single crystal silicon layer 3 having the SOI structure.
  • the thin single crystal silicon layer 4 having the SOI structure is formed on the radiation detection element 5 through the metal wiring 9 by the contact electrodes 6 and 10 made of tungsten W or the like having good embeddability formed in the insulator layer 2.
  • Peripheral circuits such as a read circuit 8 that reads the detected signal charges and processes them such as amplification are formed.
  • a gate electrode 81 is formed on the thin single crystal silicon layer 4 where the MOS transistor in the peripheral circuit such as the readout circuit 8 is formed via a gate oxide film.
  • the thin single crystal silicon layer 4 as a MOS transistor, a channel region 82 provided under the gate electrode 81 and a source region 83 and a drain region 84 provided so as to sandwich the channel region 82 are opposed to each other. Are arranged.
  • the signal wiring metal wiring 9 is connected to the signal wiring contact electrode 10 connected on the gate electrode 81, and the metal wiring 9 is connected to the interlayer insulating film 7 through the heat dissipation contact electrode 10A. It is connected to the heat conducting part 11 for heat dissipation.
  • the gate electrode 81 of the MOS transistor and the heat conducting part 11 for heat dissipation are connected by the contact electrodes 10 and 10A and the metal wiring 9.
  • the heat generated in the gate electrode 81 can be conducted through the contact electrodes 10 and 10A and the metal wiring 9 to be radiated from the heat conducting portion 11 to the outside.
  • a plurality of contact electrodes 10A for heat dissipation may be formed, and may be used together with the contact electrode 10 for signal wiring.
  • the contact electrode 10 for signal wiring and the dedicated contact electrode 10A for heat dissipation are made of metal wiring (metal You may arrange
  • the heat conduction part 11 may be provided below the single crystal silicon layer 3 below the insulator layer 2 which is the thick silicon layer 3.
  • the heat conduction part 11 is not limited to the upper part shown in FIG. 11 may be provided on the lower side of the lower surface of the channel region 82 or on the upper and lower sides of the upper and lower surfaces thereof via heat dissipation contact electrodes 10A and the like.
  • FIGS. 8A and 8B are cross-sectional views and diagrams showing examples of heat dissipation configurations of the source region and the drain region of the MOS transistor in the readout circuit 8 of the semiconductor device 20C for radiation detection according to the fourth embodiment of the present invention.
  • 8C is a cross-sectional view showing an example of the heat radiation configuration of the element isolation regions 85 and 86 between the MOS transistors.
  • heat dissipation is performed from the source region 83 of the MOS transistor to the upper interlayer insulating film 7 on the thin single crystal silicon layer 4 through the contact electrodes 10 and 10A and the metal wiring 9.
  • a heat conducting portion 11 is formed.
  • heat dissipation is performed from the drain region 84 of the MOS transistor onto the inter-layer insulating film 7 on the thin single crystal silicon layer 4 via the contact electrodes 10 and 10A and the metal wiring 9.
  • a heat conducting portion 11 is formed.
  • the contact electrodes 10 and 10A and the metal wiring 9 are respectively formed on the interlayer insulating film 7 on the thin single crystal silicon layer 4 from the element isolation regions 85 and 86 between the MOS transistors.
  • Each heat conduction part 11 for heat dissipation is formed.
  • a plurality of contact electrodes 10 and 10A may be formed for each of the gate electrode 81, the source region 83, the drain region 84, and the element isolation regions 85 and 86, and may be used together with the contact electrode 10 for signal wiring.
  • a dedicated contact electrode 10A or wiring may be disposed.
  • a plurality of contact electrodes 10 and 10A are provided in parallel with each electrode and region. May be.
  • the heat conducting portion 11 may be provided on the lower surface portion of the single crystal silicon layer 3 below the insulator layer 2 which is a thick silicon layer. It may be provided on the lower surface side or on both upper and lower surfaces.
  • the first semiconductor layer 3 (or the semiconductor substrate) is disposed on the lower surface of the insulator layer 2, and the second semiconductor layer 4 is disposed on the upper surface of the insulator layer 2.
  • the radiation detection element 4 is formed on the first semiconductor layer 3 (or the semiconductor substrate), and the readout circuit 8 serving as a peripheral circuit element is read on the second semiconductor layer 4 and its peripheral portion.
  • the MOS transistor of the readout circuit element of the readout circuit 8 as a peripheral circuit element
  • the gate electrode 81, the source region 83, the drain region 84, and the element isolation regions 85 and 86 are further connected to extend from the signal transmission path connected to the element isolation regions 85 and 86.
  • Heat-conducting portion 11 is disposed a rim, high heat radiation material film.
  • an insulating high heat dissipation material film capable of obtaining a sufficient heat dissipation effect specifically, a heat conducting portion 11 made of a diamond-like carbon film is provided for heat dissipation, thereby having a heat dissipation structure with high heat dissipation efficiency, The rise can be suppressed and high reliability can be obtained.
  • the signal transmission is connected to any one of the gate electrode, the source region and the drain region of the MOS transistor which is the readout circuit element of the readout circuit 8, and the element isolation region.
  • the heat conduction part 11 which is an insulating high heat radiation material film for heat radiation extending from the path to the upper side and / or the lower side is provided has been described.
  • the heat conducting unit 11 includes a MOS transistor gate electrode 81, a source region 83 on one side of the channel region 82 below the gate electrode 81, a drain region 84 on the other side of the channel region 82 below the gate electrode 81, and a MOS transistor.
  • Connection electrode for signal transmission connected to at least one of element isolation regions 85 and 86 for electrically isolating elements
  • the contact electrodes 10 and 10A) and / or the metal wiring (metal wiring 9) connected thereto may be connected to extend from the signal transmission path to the upper side and / or the lower side from a different heat dissipation path. . (Embodiment 5)
  • a heat dissipation configuration example of various passive elements such as a resistance element in the readout circuit 8 will be described. To do.
  • FIG. 9 is a cross-sectional view showing a heat dissipation configuration example of a passive element in the readout circuit 8 of the semiconductor device 20D for radiation detection according to the fifth embodiment of the present invention.
  • members having the same functions and effects as those of FIG. 9 members having the same functions and effects as those of FIG.
  • the radiation detecting semiconductor device 20D having the SOI structure of the fifth embodiment has an insulator layer 2 and a first semiconductor layer (or semiconductor) disposed on the lower surface of the insulator layer 2 as an SOI structure.
  • a radiation detecting element 5 such as a photodiode or an avalanche photodiode is formed on the thick single crystal silicon layer 3 having the SOI structure.
  • the thin single crystal silicon layer 4 having the SOI structure is formed on the radiation detection element 5 through the metal wiring 9 by the contact electrodes 6 and 10 made of tungsten W or the like having good embeddability formed in the insulator layer 2.
  • a readout circuit 8 for reading out the detected signal charge and processing it such as amplification is formed.
  • Various passive elements 15 such as resistors, capacitors, and inductors are formed on the thin single crystal silicon layer 4. Both terminal electrodes 16 a and 16 b are connected to both ends of the passive element 15. The both terminal electrodes 16a and 16b are connected to the metal wiring 9 via the signal wiring contact electrodes 10, respectively. The metal wiring 9 is connected to the heat conducting portion 11 on the interlayer insulating film 7 through a heat dissipation contact electrode 10A.
  • the terminal electrodes 16a and 16b of the passive element 15 and the heat conducting part 11 are connected by the contact electrodes 10 and 10A and the metal wiring 9, and the heat generated from the passive element 15 is generated by the contact electrodes 10 and 10A and the metal.
  • the heat can be conducted to the heat conducting part 11 through the wiring 9 and can be radiated from the heat conducting part 11.
  • a plurality of contact electrodes 10 and 10A are formed.
  • the contact electrode 10A for heat dissipation may be used together with the contact electrode 10 for signal wiring, or the contact electrode 10A dedicated for heat dissipation and wiring (metal wiring 9). May be arranged separately from the signal transmission path.
  • the heat conducting portion 11 may be provided below the single crystal silicon layer 3 below the insulator layer 2 which is a thick silicon layer, and the passive element 15 other than the upper portion of the single crystal silicon layer 4 as shown in FIG.
  • the passive element 15 may be provided on the lower side or the upper and lower surfaces.
  • the first semiconductor layer 3 (or the semiconductor substrate) is disposed on the lower surface of the insulator layer 2, and the second semiconductor layer 4 is disposed on the upper surface of the insulator layer 2.
  • the radiation detection element 4 is formed on the first semiconductor layer 3 (or the semiconductor substrate), and the readout circuit 8 serving as a peripheral circuit element is read on the second semiconductor layer 4 and its peripheral portion.
  • the read circuit element passive of the read circuit 8 as a peripheral circuit element
  • an insulating high heat dissipation material film capable of obtaining a sufficient heat dissipation effect specifically, a heat conducting portion 11 made of a diamond-like carbon film is provided for heat dissipation, thereby having a heat dissipation structure with high heat dissipation efficiency, The rise can be suppressed and high reliability can be obtained.
  • an insulating high heat dissipation for heat dissipation that extends upward from the signal transmission path connected to the passive element 15 that is a read circuit element of the read circuit 8 is connected.
  • the heat conducting portion 11 that is a material film is provided has been described, the present invention is not limited thereto, and the peripheral circuit portion includes at least one of a resistor, an inductor, and a capacitor.
  • 11 is a signal transmission connection electrode (contact electrode 10) connected to both terminal electrodes 16a and 16b of at least one of a resistor, an inductor and a capacitor and / or a metal wiring (metal wiring 9) connected thereto.
  • FIG. 10 is a cross-sectional view showing a heat dissipation configuration example of a MOS transistor in another peripheral circuit of the radiation detection semiconductor device 20E according to the sixth embodiment of the present invention.
  • members having the same functions and effects as those in FIG. 10 members having the same functions and effects as those in FIG.
  • the radiation detecting semiconductor device 20E having the SOI structure according to the sixth embodiment has an insulator layer 2 and a first semiconductor layer (or semiconductor) disposed on the lower surface of the insulator layer 2 as an OI structure.
  • a radiation detecting element 5 such as a photodiode or an avalanche photodiode is formed on the thick single crystal silicon layer 3 having the SOI structure.
  • the thin single crystal silicon layer 4 having the SOI structure is formed on the radiation detection element 5 through the metal wiring 9 by the contact electrodes 6 and 10 made of tungsten W or the like having good embeddability formed in the insulator layer 2.
  • a readout circuit 8 for reading out the detected signal charge and processing it such as amplification is formed.
  • one or a plurality of peripheral circuits 17 including the MOS transistor are formed.
  • the upper part of the gate electrode of the MOS transistor in the peripheral circuit 17 formed in the thin single crystal silicon layer 4 is connected to the metal wiring 9 through the contact electrode 10, and the metal wiring 9 is connected to the upper metal through the contact electrode 10.
  • the upper metal wiring 9 is connected to the electrode 9 via the signal wiring contact electrode 1 and is connected to the heat conducting portion 11 via the heat dissipation contact electrode 10A. .
  • the heat conduction part 11 is connected by these wiring structures, and the heat generated in the peripheral circuit 17 and the radiation detection element 5 can be radiated.
  • a plurality of contact electrodes 10 and 10A may be formed, and the contact electrode 10A may be used together with the contact electrode 10 for signal wiring.
  • a dedicated contact electrode 10A for heat dissipation or metal wiring 9 may be arranged.
  • the heat conducting portion 11 may be provided on the lower surface side of the single crystal silicon layer 3 below the insulator layer 2 which is a thick silicon layer. As shown in FIG. Besides the upper side, the heat conducting portion 11 may be provided on the lower surface side of the single crystal silicon layer 3 or on both upper and lower surfaces thereof. Furthermore, the heat conducting unit 11 may be arranged for each peripheral circuit 17, may be arranged according to the heat capacity of the MOS transistor in the functional block, and may be arranged on the entire surface or a part of the chip.
  • the heat conducting part 11 for heat dissipation is connected to each functional block via a connection electrode (contact electrode 10) for signal transmission and / or a metal wiring (metal wiring 9) connected thereto.
  • the heat conducting part 11 for heat radiation can be set to have a heat radiation capacity corresponding to the heat capacity of a part of the functional block or all the MOS transistors.
  • the heat conducting portion 11 for heat dissipation is disposed on the entire surface of the chip or a part of the chip surface.
  • the MOS transistor may be a partially depleted SOI transistor.
  • the first semiconductor layer 3 (or the semiconductor substrate) is disposed on the lower surface of the insulator layer 2, and the second semiconductor layer 4 is disposed on the upper surface of the insulator layer 2.
  • the radiation detection element 4 is formed on the first semiconductor layer 3 (or the semiconductor substrate), and the readout circuit 8 serving as a peripheral circuit element is read on the second semiconductor layer 4 and its peripheral portion.
  • the MOS transistor As the peripheral circuit element of the peripheral circuit 17 and its wiring
  • a heat dissipation path of a different system different from the signal transmission path connected to at least one of the structures (metal wiring 9 and contact electrodes 6, 10) or / and the signal transmission path from the upper side Heat-conducting portion 11 is disposed an insulating high heat dissipation material film for heat dissipation is the Activity connected.
  • an insulating high heat dissipation material film capable of obtaining a sufficient heat dissipation effect specifically, a heat conducting portion 11 made of a diamond-like carbon film is provided for heat dissipation, thereby having a heat dissipation structure with high heat dissipation efficiency, The rise can be suppressed and high reliability can be obtained.
  • an opening is formed in the insulating film on the upper surface of the heat conducting portion 11.
  • the present invention is not limited to this.
  • An opening may be formed in the insulating film on and around the heat conducting portion 11 so that the side surface of the conducting portion 11 is also exposed.
  • the first to sixth embodiments of the present invention can be variously modified within the scope shown in the claims of the present application.
  • embodiments obtained by further combining technical means appropriately changed within the scope of the claims of the present application are also included in the technical scope of the present invention.
  • a radiation detection element and a readout circuit thereof are formed on the same SOI (Silicon ON Insulator) substrate with an insulating film therebetween, and an active element such as a MOS transistor, a resistor, a capacitor, or the like constituting the readout circuit is formed.
  • SOI Silicon ON Insulator
  • an active element such as a MOS transistor, a resistor, a capacitor, or the like constituting the readout circuit.
  • the radiation detection semiconductor devices 20 and 20A to 20E having the SOI structure of the present invention enable effective heat radiation countermeasures against the generation of Joule heat accompanying the operation of semiconductor elements such as MOS transistors and radiation detection elements 5. . It is possible to prevent the deterioration of the characteristics of the semiconductor element caused by the accumulation of heat and the thermal deterioration of the various components constituting the semiconductor element and the wiring layer including vias and contact electrodes, and a highly reliable circuit resistant to self-heating and such a circuit. A highly reliable semiconductor device for radiation detection including a circuit as a configuration can be realized.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)

Abstract

Selon l'invention, la fourniture de sections thermoconductrices comprenant des films d'un matériau à dissipation thermique très élevée et électriquement isolant qui fournit un effet de dissipation thermique suffisant, spécifiquement des films de carbone de type diamant, permet l'obtention d'une structure de dissipation thermique avec une efficacité de dissipation thermique élevée, réduisant des augmentations de température et produisant un degré de fiabilité élevé. Dans ce dispositif à semi-conducteurs (20) pour détecter un rayonnement, un élément de détection de rayonnement (5) est formé sur une première couche de semi-conducteur (3) ; un transistor MOS de lecture pour un circuit de lecture (8), c'est-à-dire un élément de circuit périphérique, est formé sur une seconde couche de semi-conducteur (4) et la périphérie de celle-ci ; et une structure de câblage connectée à l'élément de circuit de lecture est formée au sommet de celui-ci. Ledit dispositif à semi-conducteur (20) pour détecter un rayonnement comporte des sections thermoconductrices (11) constituées de films de dissipation thermique d'un matériau à dissipation thermique très élevée et électriquement isolant. Lesdites sections thermoconductrices (11) s'étendent vers le haut depuis des chemins de dissipation thermique ou des chemins d'émission de signal, et sont connectés par l'intermédiaire de ces derniers, lesquels font partie d'un système séparé depuis des chemins d'émission de signal connectés à la première couche de semi-conducteur (3), l'élément de détection de rayonnement (5), la seconde couche de semi-conducteur (4), l'élément de circuit de lecture du circuit de lecture (8), c'est-à-dire l'élément de circuit périphérique, et/ou la structure de câblage (câblage métallique (9) et électrodes de contact (6, 10)).
PCT/JP2014/003355 2013-07-12 2014-06-23 Dispositif à semi-conducteurs pour détecter un rayonnement WO2015004867A1 (fr)

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JP2017157736A (ja) * 2016-03-03 2017-09-07 エスアイアイ・セミコンダクタ株式会社 受光素子を有する半導体装置
CN107895743A (zh) * 2016-10-04 2018-04-10 豪威科技股份有限公司 单光子雪崩光电二极管探测器的装置和方法
WO2019087764A1 (fr) * 2017-10-30 2019-05-09 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteur de type à irradiation arrière, procédé de fabrication de dispositif d'imagerie à semi-conducteur de type à irradiation arrière, dispositif d'imagerie et appareil électronique
WO2021014849A1 (fr) * 2019-07-24 2021-01-28 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs, machine électronique et procédé de production d'un dispositif d'imagerie à semi-conducteurs
US11495627B2 (en) * 2020-05-10 2022-11-08 United Microelectronics Corp. Single photon avalanche diode fabricated on a silicon-on-insulator substrate

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WO2016147886A1 (fr) * 2015-03-17 2016-09-22 ソニー株式会社 Élément semi-conducteur, procédé d'amplification de signal et dispositif de détection
JP2017157736A (ja) * 2016-03-03 2017-09-07 エスアイアイ・セミコンダクタ株式会社 受光素子を有する半導体装置
CN107895743B (zh) * 2016-10-04 2020-07-10 豪威科技股份有限公司 单光子雪崩光电二极管探测器的装置和方法
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JPWO2019087764A1 (ja) * 2017-10-30 2020-11-19 ソニーセミコンダクタソリューションズ株式会社 裏面照射型の固体撮像装置、および裏面照射型の固体撮像装置の製造方法、撮像装置、並びに電子機器
KR20200077522A (ko) * 2017-10-30 2020-06-30 소니 세미컨덕터 솔루션즈 가부시키가이샤 이면 조사형 고체 촬상 장치, 이면 조사형 고체 촬상 장치의 제조 방법, 촬상 장치 및 전자기기
WO2019087764A1 (fr) * 2017-10-30 2019-05-09 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteur de type à irradiation arrière, procédé de fabrication de dispositif d'imagerie à semi-conducteur de type à irradiation arrière, dispositif d'imagerie et appareil électronique
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JP7293123B2 (ja) 2017-10-30 2023-06-19 ソニーセミコンダクタソリューションズ株式会社 裏面照射型の固体撮像装置、および裏面照射型の固体撮像装置の製造方法、撮像装置、並びに電子機器
KR102677875B1 (ko) * 2017-10-30 2024-06-25 소니 세미컨덕터 솔루션즈 가부시키가이샤 이면 조사형 고체 촬상 장치, 이면 조사형 고체 촬상 장치의 제조 방법, 촬상 장치 및 전자기기
WO2021014849A1 (fr) * 2019-07-24 2021-01-28 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs, machine électronique et procédé de production d'un dispositif d'imagerie à semi-conducteurs
US20220271072A1 (en) * 2019-07-24 2022-08-25 Sony Semiconductor Solutions Corporation Solid-state image pickup device, electronic apparatus, and method for manufacturing solid-state image pickup device
US11495627B2 (en) * 2020-05-10 2022-11-08 United Microelectronics Corp. Single photon avalanche diode fabricated on a silicon-on-insulator substrate

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