WO2014201704A1 - 温控针、用于紫外线硬化配向中支撑基板的装置及其方法 - Google Patents

温控针、用于紫外线硬化配向中支撑基板的装置及其方法 Download PDF

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Publication number
WO2014201704A1
WO2014201704A1 PCT/CN2013/077767 CN2013077767W WO2014201704A1 WO 2014201704 A1 WO2014201704 A1 WO 2014201704A1 CN 2013077767 W CN2013077767 W CN 2013077767W WO 2014201704 A1 WO2014201704 A1 WO 2014201704A1
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WO
WIPO (PCT)
Prior art keywords
temperature
support pin
substrate
support
temperature control
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PCT/CN2013/077767
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English (en)
French (fr)
Inventor
宋涛
赵国栋
刘明
马涛
Original Assignee
深圳市华星光电技术有限公司
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Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US13/978,719 priority Critical patent/US9277596B2/en
Publication of WO2014201704A1 publication Critical patent/WO2014201704A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1313—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells specially adapted for a particular application
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
    • G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation

Definitions

  • Temperature control needle device for supporting substrate in ultraviolet hardening alignment and method thereof
  • the present invention relates to a temperature control needle, an apparatus for supporting a substrate in an ultraviolet curing alignment, and a method therefor.
  • UV Curing is a very important process.
  • the principle is that after the liquid crystal panel is filled with liquid crystal, an electric field is applied to the glass substrate, and then The liquid crystal is irradiated with ultraviolet rays, and the liquid crystal is polymerized by the action of ultraviolet rays to finally achieve alignment of the liquid crystal.
  • the key factors in this process are the uniformity of UV irradiation, the electric field applied to the glass substrate, and the polymerization temperature. As shown in FIG. 1, the pressure probe 12 applies a voltage to the glass substrate 11.
  • the support pin (Pin) 10 is currently used to support the glass substrate 11, but since the support pin 10 cannot achieve complete heat insulation, The contact of the support pin 10 with the glass substrate 11 causes uneven heating of the contact position and the non-contact position, so that the entire glass substrate 11 is unevenly heated, which in turn causes Pin Mura caused by the support pin 10 (Pin Mura refers to the support pin).
  • Pin Mura refers to the support pin.
  • the presence of the liquid crystal display is uneven in brightness, causing various traces.
  • an object of the present invention is to provide a temperature control needle comprising: a support pin for supporting a substrate; a heater disposed inside the support pin and adjacent to the Supporting the top of the needle, receiving control of the temperature control system to heat the support needle; cooling system, receiving the control of the temperature control system to cool the support needle, and then cooperating with the heater to the support needle The temperature is dynamically adjusted.
  • Another object of the present invention is to provide a device for supporting a substrate in an ultraviolet curing alignment.
  • the temperature control needle includes: a support pin for supporting the substrate; a heater disposed inside the support pin and near the top of the support pin And receiving the control of the temperature control system to heat the support pin; the cooling system is controlled by the temperature control system to cool the support pin, and then cooperate with the heater to dynamically adjust the temperature of the support pin
  • the temperature control system connects and controls the heater and the cooling system to independently control the temperature of the support pin, thereby maintaining the temperature of the substrate and the support pin consistent, and causing the The support position of the support pin on the substrate and the periphery of the support position are uniformly heated, so that the entire substrate is uniformly heated.
  • the cooling system includes: a circulation pipe that enters from a water inlet hole at a bottom of the support pin, surrounds the top of the support body, and exits through a water outlet hole at a bottom of the support pin; cooling water, flowing a circulation control valve disposed on a circulation pipe that does not enter the water inlet hole of the bottom of the support pin, and is connected to the temperature control system to change the switch according to the control of the temperature control system status.
  • the support pin is made of metal.
  • the temperature control system includes: a detection system, detecting a temperature of the substrate and a temperature of the support pin; and a control system, based on a comparison result between a temperature of the substrate and a temperature of the support pin, the control system The temperature of the support needle.
  • the detecting system includes: a first temperature detector located below the substrate and away from the supporting pin to detect a temperature of the substrate; and a third temperature detector disposed at a top of the supporting pin To detect the temperature of the top of the support pin.
  • the detecting system further includes: a second temperature detector located below the substrate and adjacent to the supporting pin to detect a temperature around a supporting position of the supporting pin on the substrate.
  • the first temperature detector and the second temperature detector are both infrared thermometers
  • the third temperature detector is a thermocouple thermometer.
  • the control system includes a heating control system and a cooling control system, wherein the heating control system heats the support pin when the temperature of the substrate is higher than the temperature of the support pin; The cooling control system cools the support pin when the temperature is lower than the temperature of the support pin.
  • Still another object of the present invention is to provide a method for supporting a substrate in an ultraviolet curing alignment, comprising: stepping: supporting the substrate with a plurality of temperature control pins; detecting and comparing temperature of the substrate and the temperature control The temperature of the needle; based on the comparison result, by independently controlling the temperature of the temperature control needle, the temperature of the substrate is kept consistent with the temperature of the temperature control needle, and the support position of the temperature control needle on the substrate and the periphery of the support position are heated. Uniform, and thus the entire substrate is heated uniformly.
  • the temperature control needle of the invention the device for supporting the substrate in the ultraviolet hardening alignment and the method thereof, the temperature of the substrate is controlled to be consistent with the temperature of the temperature control needle by controlling the temperature of the temperature control needle, and the temperature control on the substrate is made
  • the support position of the needle and the periphery of the support position are evenly heated, thereby uniformly heating the substrate as a whole to eliminate or reduce the Pin Mura phenomenon.
  • FIG. 1 is a schematic view showing the structure of an apparatus for supporting a substrate in an ultraviolet curing alignment in the prior art.
  • 2 is a schematic view showing a bending deformation of a prior art glass substrate after reducing a support pin.
  • Fig. 3 is a schematic view showing the structure of an apparatus for supporting a substrate in an ultraviolet curing alignment according to an embodiment of the present invention.
  • 4 is a schematic structural view of a temperature control needle and a cooling system thereof according to an embodiment of the present invention.
  • Figure 5 is a block diagram showing the structure of a temperature control system in accordance with an embodiment of the present invention.
  • Fig. 6 is a flow chart showing a method for supporting a substrate in an ultraviolet curing alignment according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural view of an apparatus for supporting a substrate in an ultraviolet curing alignment according to an embodiment of the present invention. As shown in FIG.
  • the apparatus for supporting a substrate in an ultraviolet curing alignment includes a plurality of temperature control needles 31 and a temperature control system 32. Specifically, a plurality of temperature control needles 31 are used to support the substrate 33 upward. Each temperature control needle 31 is connected to the temperature control system 32, and each temperature control needle 31 is independently controlled by the temperature control system 32 to keep the temperature of the substrate 33 in line with the temperature of the temperature control needle 31, and to make the substrate 33 The support position of the upper temperature control needle 31 and the periphery of the support position are evenly heated.
  • the temperature of the temperature control needle 31 is adjusted by using the temperature control system 32, so that the portion of the substrate 33 that reaches the temperature control needle 31 and the portion without the temperature control needle 31 are uniformly heated, so that the whole of the substrate 33 is uniformly heated to eliminate or reduce. Pin Mura phenomenon.
  • FIG. 4 is a schematic structural view of a temperature control needle and a cooling system thereof according to an embodiment of the present invention. In Fig. 4, only one temperature control needle is shown for convenience of explanation, and the structure of the temperature control needle is appropriately enlarged for the sake of clarity. It should be understood that other temperature control pins not shown are the same as those of the temperature control needle shown in FIG. As shown in FIG.
  • the temperature control needle 31 includes a support pin 311, a heater 312, and a cooling system 313.
  • the support pin 311 is for supporting the substrate 33 upward;
  • the heater 312 is disposed inside the support pin 311 and near the top of the support pin 311, and the heater 312 is controlled by the temperature control system 32 to heat the support pin 311, for example, when warming
  • the control system 32 detects that the temperature of the top of the support pin 311 is less than the temperature of the substrate 33, and the temperature control system 32 controls the heater 312 to heat the support pin 311 to raise the temperature of the support pin 311; the cooling system 313 receives the temperature control system 32.
  • Controlling to cool the support pin 31 for example, when the temperature control system 32 detects that the temperature of the top of the support pin 311 is greater than the temperature of the substrate 33, the temperature control system 32 controls the cooling system 313 to cool the support pin 311 to support The temperature of the needle 311 is lowered.
  • the temperature control system 32 dynamically controls the heater 312 or the cooling system 313 to heat or cool the support pin 311 according to the temperature of the support pin 311 and the substrate 33, so that the temperature of the substrate 33 and the support pin 311 are kept consistent, and the substrate is made
  • the support position of the support pin 311 on the 33 is uniformly heated to the periphery of the support position, thereby further heating the substrate 33 as a whole.
  • the support pin 311 Since the support pin 311 needs to have high temperature control sensitivity, it needs to be made of a material with better thermal conductivity.
  • the material of the support pin 311 can be a metal material with good thermal conductivity such as aluminum or copper. Or a metal alloy made of a metal material having good thermal conductivity.
  • the cooling system 313 includes a circulation pipe 3131, a cooling water, and a flow control valve 3132.
  • the circulation pipe 3131 enters from the water inlet hole 3111 of the bottom of the support pin 311, surrounds the top of the support pin 311, and exits through the water outlet hole 3112 at the bottom of the support pin 311; the cooling water circulates in the circulation pipe 3131;
  • the control valve 3132 is disposed on the circulation pipe 3131 of the water inlet hole 3111 not entering the bottom of the support pin 311, and is connected to the temperature control system 32, thereby changing the switch state according to the control of the temperature control system 32 to control the flow rate of the cooling water.
  • the size in turn, cools the support pin 311.
  • Figure 5 is a block diagram showing the structure of a temperature control system in accordance with an embodiment of the present invention.
  • temperature control system 32 in accordance with an embodiment of the present invention includes detection system 321 and control system 322.
  • the detection system 321 detects the temperature of the substrate 33 and the temperature of the support pin 311; the control system 322 controls the temperature of the support pin 311 based on the comparison result of the temperature of the substrate 33 and the temperature of the support pin 311.
  • the detection system 321 needs to detect the temperature of the support position on the substrate 33 away from the support pin 311.
  • the detection system 321 can include a first temperature detector 3211 and a third temperature detector 3213.
  • the first temperature detector 3211 is disposed below the substrate 33 and away from the support pin 311, and the first temperature detector 3211 detects the temperature of the substrate 33.
  • the third temperature detector 3213 is disposed at the top of the support pin 311, and the third temperature is detected.
  • the device 3213 detects the temperature of the top of the support pin 311.
  • Control system 322 can include a heating control system 3221 and a cooling control system 3222. Wherein, the heating control system 3221 controls the heating power and/or heating time of the heater 312 based on the comparison result of the temperature of the substrate 33 and the temperature of the support pin 311, thereby controlling the temperature of the support pin 311; the cooling control system 3222 is based on the substrate 33.
  • the result of the comparison of the temperature and the temperature of the support pin 311 controls the switching state of the flow control valve 3132 to control the flow rate of the cooling water (corresponding to controlling the cooling power and/or the cooling time of the cooling support pin 311), thereby controlling the support pin 311. temperature.
  • the heating power and/or heating time of the heater 312 is controlled by the heating control system 3221, and the cooling control system 3222 controls the switching state of the flow control valve 3132, thereby dynamically controlling the temperature of the support pin 311 so that the temperature of the substrate 33 is The temperature of the support pin 311 remains the same.
  • the heating control system 3221 controls the heating power and/or heating of the heater 312. Time, the support pin 311 is heated to make the temperature of the top of the support pin 311 The degree is increased; when the temperature of the substrate 33 detected by the first temperature detector 3211 is lower than the temperature of the top of the support pin 311 detected by the third temperature detector 3213, the cooling control system 3222 controls the flow control valve 3132 to open, so that the cooling The flow rate of water is increased, and the support pin 311 is cooled, so that the temperature at the top of the support pin 311 is lowered.
  • the detection system 321 can further include a second temperature detector 3212.
  • the second temperature detector 3212 is disposed below the substrate 33 and adjacent to the support pin 311, and the second temperature detector 3212 detects the temperature around the support position of the support pin 311 on the substrate 33.
  • the heating control system 3221 controls the heater 312.
  • Heating power and/or heating time heating the support pin 311 such that the temperature of the top of the support pin 311 is increased; when the temperature of the support pin 311 on the substrate 33 detected by the second temperature detector 3212 is low, the temperature around the support pin 311 is low.
  • the cooling control system 3222 controls the flow control valve 3132 to open, so that the flow rate of the cooling water is increased, and the support pin 311 is cooled, so that the top of the support pin 311 is Temperature drop. This makes it possible to uniformly heat the support position of the support pin 311 on the substrate 33 and the periphery of the support position, thereby further heating the substrate 33 as a whole.
  • the first temperature controller 3211 and the second temperature controller 3212 may both be infrared thermometers, and the third temperature detector 3213 may be a thermocouple thermometer.
  • the substrate 33 of the present embodiment may generally be a glass substrate.
  • the present invention also provides a method for supporting a substrate in an ultraviolet curing alignment. 6 is a flow chart of a method for supporting a substrate in an ultraviolet curing alignment, in accordance with an embodiment of the present invention. As shown in FIG.
  • a method for supporting a substrate in an ultraviolet curing alignment includes: Step 61: supporting the substrate with a plurality of temperature control pins; Step 62: detecting and comparing temperature of the substrate And the temperature of the temperature control needle; Step 63: Based on the comparison result, by independently controlling the temperature of the temperature control needle, the temperature of the substrate is kept consistent with the temperature of the temperature control needle, and the support position of the temperature control needle on the substrate is made The periphery of the support position is heated uniformly, thereby further heating the substrate as a whole.
  • the temperature control needle maintain the temperature of the temperature control needle to maintain the temperature of the substrate and the temperature of the temperature control needle Consistently, the support position of the temperature control needle on the substrate and the periphery of the support position are uniformly heated, thereby uniformly heating the substrate as a whole to eliminate or reduce the Pin Mura phenomenon. Moreover, in the alignment of the substrate, it is not necessary to reduce the number of temperature control pins, to avoid bending deformation of the substrate, and to improve the contact yield of the pressurized probe with the substrate when a voltage is applied.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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Abstract

一种温控针、用于紫外线硬化配向中支撑基板的装置及支撑基板的方法。该温控针（31）包括：支撑针（311），用于支撑基板（33）；加热器（312），设于支撑针（311）的内部并靠近支撑针（311）的顶部，接受温控系统（32）的控制，以加热支撑针（311）；冷却系统（313），接受温控系统（32）的控制对支撑针（311）进行降温，进而与加热器（312）配合对支撑针（311）的温度进行动态调节，从而使得基板（33）与温控针（31）的温度保持一致，并使得基板（33）上的温控针（31）的支撑位置与该支撑位置的周围受热均匀，进而使得基板（33）整体受热均匀以消除或减少现象，并且不需要减少温控针（31）的数量，避免基板（33）产生弯曲变形，提高加压探针在施加电压时与基板（33）的接触良率。

Description

温控针、 用于紫外线硬化配向中支撑基板的装置及其方法 技术领域
本发明涉及一种温控针、 用于紫外线硬化配向中支撑基板的装置及其方 法。
背景技术
在生产采用 HVA技术的液晶显示器的制程中， 紫外线硬化 （UV Curing, 即紫外光配向） 是一道非常重要的制程， 其原理是液晶面板在注满液晶后， 在 玻璃基板上加上电场， 然后对液晶进行紫外线照射， 液晶在紫外线的作用下发 生聚合反应，最终实现液晶的配向。该制程的关键因素是紫外线照射的均匀度、 加在玻璃基板上的电场和聚合反应温度。 如图 1所示， 加压探针 12对玻璃基 板 11施加电压， 为了保证紫外线照射的均匀性， 目前采用支撑针（Pin) 10支 撑玻璃基板 11，但是由于支撑针 10不能达到完全的绝热， 支撑针 10与玻璃基 板 11的接触会造成接触位置与未接触位置的受热不均， 使得玻璃基板 11整体 受热不均匀， 进而导致由支撑针 10引起的 Pin Mura (Pin Mura指的是由于支 撑针的存在， 液晶显示器亮度不均匀， 造成各种痕迹的现象）。
为了解决 Pin Mura问题， 如图 2所示， 需要减少支撑针 20的数量， 并且 使支撑针 20接触玻璃基板 21的位置位于非显示区域， 但是这样会导致玻璃基 板 21产生弯曲 （bending) 变形， 导致加压探针 22对玻璃基板 21施加电压的 时候出现接触不良， 从而导致液晶配向出现异常。
发明内容 为了解决上述现有技术存在的问题， 本发明的目的在于提供一种温控针， 其包括： 支撑针， 用于支撑基板； 加热器， 设于所述支撑针的内部并靠近所述 支撑针的顶部， 接受温控系统的控制， 以加热所述支撑针； 冷却系统， 接受所 述温控系统的控制对所述支撑针进行降温， 进而与所述加热器配合对所述支撑 针的温度进行动态调节。 本发明的另一目的还在于提供一种用于紫外线硬化配向中支撑基板的装 置， 其包括温控针和温控系统， 其中， 所述温控针包括： 支撑针， 用于支撑所 述基板； 加热器， 设于所述支撑针的内部并靠近所述支撑针的顶部， 并接受温 控系统的控制， 以加热所述支撑针； 冷却系统， 接受温控系统的控制对所述支 撑针进行降温， 进而与所述加热器配合对所述支撑针的温度进行动态调节； 所 述温控系统连接并控制所述加热器和所述冷却系统来对所述支撑针的温度进 行独立的控制， 从而使所述基板与所述支撑针的温度保持一致， 并使得所述基 板上的支撑针的支撑位置与该支撑位置的周围受热均匀， 进而使得所述基板整 体受热均匀。 此外， 所述冷却系统包括： 循环管， 由所述支撑针的底部的进水孔进入， 环绕到所述支撑体的顶部， 并经由所述支撑针的底部的出水孔走出； 冷却水， 流动于所述循环管； 流量控制阀， 设置于未进入所述支撑针的底部的进水孔的 循环管上， 并连接至所述温控系统， 以根据所述温控系统的控制而改变开关状 态。 此外， 所述支撑针的材质为金属。 此外， 所述温控系统包括： 侦测系统， 侦测所述基板的温度与所述支撑针 的温度； 控制系统， 基于所述基板的温度与所述支撑针的温度的比较结果， 控 制所述支撑针的温度。 此外， 所述侦测系统包括： 第一温度探测器， 位于所述基板下方并远离所 述支撑针， 以探测所述基板的温度；第三温度探测器，设于所述支撑针的顶部， 以探测所述支撑针的顶部的温度。 此外， 所述侦测系统进一歩包括： 第二温度探测器， 位于所述基板下方并 靠近所述支撑针， 以探测所述基板上的所述支撑针的支撑位置周围的温度。 此外， 所述第一温度探测器和第二温度探测器均为红外温度计， 所述第三 温度探测器为热电偶温度计。 此外， 所述控制系统包括加热控制系统和冷却控制系统， 其中， 当所述基 板的温度高于所述支撑针的温度时， 所述加热控制系统对所述支撑针进行加 热； 当所述基板的温度低于所述支撑针的温度时， 所述冷却控制系统对所述支 撑针进行冷却。 本发明的又一目的还在于提供一种用于紫外线硬化配向中支撑基板的方 法， 包括歩骤： 利用多个温控针支撑所述基板； 探测并比较所述基板的温度和 所述温控针的温度； 基于比较结果， 通过独立的控制温控针的温度， 以使基板 的温度与温控针的温度保持一致， 并使得基板上的温控针的支撑位置与该支撑 位置的周围受热均匀， 进而使得基板整体受热均匀。
本发明的温控针、 用于紫外线硬化配向中支撑基板的装置及其方法， 通过 控制温控针的温度， 以使基板的温度与温控针的温度保持一致， 并使得基板上 的温控针的支撑位置与该支撑位置的周围受热均匀， 进而使得基板整体受热均 匀以消除或减少 Pin Mura现象。并且在基板进行配向中，不需要减少温控针的 数量，避免基板产生弯曲变形，提高加压探针在施加电压时与基板的接触良率。 附图说明 图 1是现有技术的用于紫外线硬化配向中支撑基板的装置的结构示意图。 图 2是现有技术的玻璃基板在减少支撑针之后出现弯曲变形的示意图。 图 3是根据本发明的实施例的用于紫外线硬化配向中支撑基板的装置的结 构示意图。 图 4是根据本发明的实施例的温控针及其冷却系统的结构示意图。 图 5是根据本发明的实施例的温控系统的结构示意图。
图 6是根据本发明的实施例的用于紫外线硬化配向中支撑基板的方法流程 图。
具体实施方式 现在对本发明的实施例进行详细的描述， 其示例表示在附图中， 其中， 相 同的标号始终表示相同部件。下面通过参照附图对实施例进行描述以解释本发 明。 在附图中， 为了清晰起见， 可以夸大层和区域的厚度。 在下面的描述中， 为了避免公知结构和 /或功能的不必要的详细描述所导致的本发明构思的混淆， 可省略公知结构和 /或功能的不必要的详细描述。 图 3是根据本发明的实施例的用于紫外线硬化配向中支撑基板的装置的结 构示意图。 如图 3所示， 根据本发明的实施例的用于紫外线硬化配向中支撑基板的装 置包括多个温控针 31和温控系统 32。 具体而言， 多个温控针 31用于向上支撑基板 33。每个温控针 31连接至温 控系统 32， 并且每个温控针 31 由温控系统 32独立的控制温度， 以使基板 33 的温度与温控针 31的温度保持一致， 并使得基板 33上的温控针 31的支撑位 置与该支撑位置的周围受热均匀。 加热时， 通过利用温控系统 32调节温控针 31的温度， 使得基板 33达到有温控针 31的部位和无温控针 31的部位受热均 匀， 进而使得基板 33整体受热均匀以消除或减少 Pin Mura现象。 以下， 将对温控针 31的详细结构进行描述。 图 4是根据本发明的实施例 的温控针及其冷却系统的结构示意图。 在图 4中， 为了便于说明， 只示出一个 温控针， 另外， 为了清楚起见， 对温控针的结构进行了适度的放大。应当理解， 其它未示出的温控针与图 4所示的温控针的结构相同。 如图 4所示， 根据本发明的实施例的温控针 31包括支撑针 311、 加热器 312和冷却系统 313。 支撑针 311用于向上支撑基板 33 ;加热器 312设于支撑针 311的内部并靠 近支撑针 311的顶部， 加热器 312接受温控系统 32的控制来对支撑针 311进 行加热， 例如， 当温控系统 32探测到支撑针 311的顶部的温度小于基板 33的 温度， 则温控系统 32控制加热器 312对支撑针 311进行加热， 使支撑针 311 的温度上升； 冷却系统 313接受温控系统 32的控制来对支撑针 311进行冷却， 例如， 当温控系统 32探测到支撑针 311的顶部的温度大于基板 33的温度， 则 温控系统 32控制冷却系统 313对支撑针 311进行冷却， 使支撑针 311的温度 下降。 这样， 温控系统 32根据支撑针 311与基板 33的温度而动态控制加热器 312或冷却系统 313来对支撑针 311进行加热或冷却， 使得基板 33与支撑针 311的温度保持一致，并使得基板 33上的支撑针 311的支撑位置与该支撑位置 的周围受热均匀， 进而使得基板 33整体受热均匀。 由于支撑针 311需要具有较高的温控灵敏度， 故需才用导热性较好的材料 来制作， 在本实施例中， 支撑针 311的材料可为铝、 铜等导热性较好的金属材 料， 或者是由导热性较好的金属材料制成的金属合金。 进一歩地， 冷却系统 313包括循环管 3131、 冷却水和流量控制阀 3132。 其中，循环管 3131由支撑针 311的底部的进水孔 3111进入，环绕到支撑针 311 的顶部， 并经由支撑针 311的底部的出水孔 3112走出； 冷却水在循环管 3131 中循环流动； 流量控制阀 3132设置于未进入支撑针 311的底部的进水孔 3111 的循环管 3131上， 并连接至温控系统 32，进而根据温控系统 32的控制而改变 开关状态， 以控制冷却水的流量大小， 进而对支撑针 311进行冷却调节。 以下， 将对温控系统 32进行详细的描述。 图 5是根据本发明的实施例的 温控系统的结构示意图。 如图 5所示， 根据本发明的实施例的温控系统 32包括侦测系统 321和控 制系统 322。 侦测系统 321侦测基板 33的温度与支撑针 311的温度； 控制系统 322基 于基板 33的温度与支撑针 311的温度的比较结果来控制支撑针 311的温度。 在这里， 为了避免支撑针 311的温度干扰侦测系统 321侦测基板 33的温度， 侦测系统 321需要侦测基板 33上远离支撑针 311的支撑位置的温度。 侦测系统 321可包括第一温度探测器 3211和第三温度探测器 3213。其中， 第一温度探测器 3211设于基板 33的下方并远离支撑针 311， 第一温度探测器 3211探测基板 33的温度； 第三温度探测器 3213设于支撑针 311的顶部， 第三 温度探测器 3213探测支撑针 311的顶部的温度。 控制系统 322可包括加热控制系统 3221和冷却控制系统 3222。 其中， 加 热控制系统 3221基于基板 33的温度与支撑针 311的温度的比较结果来控制加 热器 312的加热功率和 /或加热时间，进而控制支撑针 311的温度；冷却控制系 统 3222基于基板 33的温度与支撑针 311的温度的比较结果来控制流量控制阀 3132的开关状态， 以控制冷却水的流量大小（相当于控制冷却支撑针 311的冷 却功率和 /或冷却时间）， 进而控制支撑针 311的温度。 这样， 通过加热控制系 统 3221控制加热器 312的加热功率和 /或加热时间， 以及冷却控制系统 3222 控制流量控制阀 3132的开关状态， 进而动态控制支撑针 311 的温度， 以使基 板 33的温度与支撑针 311的温度保持一致。 例如， 当第一温度探测器 3211探测到的基板 33的温度高于第三温度探测 器 3213探测到的支撑针 311顶部的温度时，加热控制系统 3221控制加热器 312 的加热功率和 /或加热时间，对支撑针 311进行加热， 使得支撑针 311顶部的温 度升高； 当第一温度探测器 3211探测到的基板 33的温度低于第三温度探测器 3213探测到的支撑针 311顶部的温度时， 冷却控制系统 3222控制流量控制阀 3132打开， 使得冷却水的流量加大， 对支撑针 311进行冷却， 使得支撑针 311 顶部的温度下降。 为了探测基板 33上的支撑针 311 的支撑位置周围的温度， 侦测系统 321 可进一歩包括第二温度探测器 3212。第二温度探测器 3212设于基板 33的下方 并靠近支撑针 311， 第二温度探测器 3212探测基板 33上的支撑针 311的支撑 位置周围的温度。 当第二温度探测器 3212探测到的基板 33上的支撑针 311的 支撑位置周围的温度高于第三温度探测器 3213探测到的支撑针 311顶部的温 度时， 加热控制系统 3221控制加热器 312的加热功率和 /或加热时间， 对支撑 针 311进行加热， 使得支撑针 311顶部的温度升高； 当第二温度探测器 3212 探测到的基板 33上的支撑针 311 的支撑位置周围的温度低于第三温度探测器 3213探测到的支撑针 311顶部的温度时， 冷却控制系统 3222控制流量控制阀 3132打开， 使得冷却水的流量加大， 对支撑针 311进行冷却， 使得支撑针 311 顶部的温度下降。 这样可使得基板 33上的支撑针 311 的支撑位置与该支撑位 置的周围受热均匀， 进而使得基板 33整体受热均匀。 在本实施例中， 优选地， 第一温度控制器 3211和第二温度控制器 3212可 均为红外温度计， 第三温度探测器 3213可为热电偶温度计。 此外， 在实际应用中， 本实施例的基板 33通常可为玻璃基板。 本发明还提供了一种用于紫外线硬化配向中支撑基板的方法。 图 6是根据 本发明的实施例的用于紫外线硬化配向中支撑基板的方法流程图。 如图 6所示， 根据本发明的实施例的用于紫外线硬化配向中支撑基板的方 法包括： 歩骤 61 : 利用多个温控针支撑所述基板； 歩骤 62: 探测并比较基板的温度和温控针的温度； 歩骤 63 : 基于比较结果， 通过独立地控制温控针的温度， 以使基板的温度 与温控针的温度保持一致， 并使得基板上的温控针的支撑位置与该支撑位置的 周围受热均匀， 进而使得基板整体受热均匀。 综上所述， 根据本发明的实施例的温控针、 用于紫外线硬化配向中支撑基 板的装置及其方法， 通过控制温控针的温度， 以使基板的温度与温控针的温度 保持一致， 并使得基板上的温控针的支撑位置与该支撑位置的周围受热均匀， 进而使得基板整体受热均匀以消除或减少 Pin Mura现象。并且在基板进行配向 中， 不需要减少温控针的数量， 避免基板产生弯曲变形， 提高加压探针在施加 电压时与基板的接触良率。
尽管已经参照其示例性实施例具体显示和描述了本发明，但是本领域的技 术人员应该理解， 在不脱离权利要求所限定的本发明的精神和范围的情况下， 可以对其进行形式和细节上的各种改变。

Claims

权利要求书
1、 一种温控针， 其中， 包括： 支撑针， 用于支撑基板； 加热器， 设于所述支撑针的内部并靠近所述支撑针的顶部， 接受温控系统 的控制， 以加热所述支撑针； 冷却系统， 接受所述温控系统的控制对所述支撑针进行降温， 进而与所述 加热器配合对所述支撑针的温度进行动态调节。
2、 根据权利要求 1所述的温控针， 其中， 所述冷却系统包括： 循环管， 由所述支撑针的底部的进水孔进入， 环绕到所述支撑体的顶部， 并经由所述支撑针的底部的出水孔走出； 冷却水， 流动于所述循环管； 流量控制阀， 设置于未进入所述支撑针的底部的进水孔的循环管上， 并连 接至所述温控系统， 以根据所述温控系统的控制而改变开关状态。
3、 根据权利要求 1所述的温控针， 其中， 所述支撑针的材质为金属。
4、 根据权利要求 1所述的温控针， 其中， 所述温控系统包括： 侦测系统， 侦测所述基板的温度与所述支撑针的温度； 控制系统， 基于所述基板的温度与所述支撑针的温度的比较结果， 控制所 述支撑针的温度。
5、 根据权利要求 4所述的温控针， 其中， 所述侦测系统包括： 第一温度探测器， 位于所述基板下方并远离所述支撑针， 以探测所述基板 的温度； 第三温度探测器， 设于所述支撑针的顶部， 以探测所述支撑针的顶部的温
6、 根据权利要求 5所述的温控针， 其中， 所述侦测系统进一歩包括: 第二温度探测器， 位于所述基板下方并靠近所述支撑针， 以探测所述基板 上的所述支撑针的支撑位置周围的温度。
7、 根据权利要求 6所述的温控针， 其中， 所述第一温度探测器和第二温 度探测器均为红外温度计， 所述第三温度探测器为热电偶温度计。
8、 根据权利要求 4所述的温控针， 其中， 所述控制系统包括加热控制系 统和冷却控制系统， 其中， 当所述基板的温度高于所述支撑针的温度时， 所述加热控制系统对 所述支撑针进行加热； 当所述基板的温度低于所述支撑针的温度时， 所述冷却 控制系统对所述支撑针进行冷却。
9、 一种用于紫外线硬化配向中支撑基板的装置， 其中， 该装置包括温控 针和温控系统， 其中， 所述温控针包括： 支撑针， 用于支撑所述基板； 加热器， 设于所述 支撑针的内部并靠近所述支撑针的顶部， 并接受温控系统的控制， 以加热所述 支撑针； 冷却系统， 接受温控系统的控制对所述支撑针进行降温， 进而与所述 加热器配合对所述支撑针的温度进行动态调节； 所述温控系统连接并控制所述加热器和所述冷却系统来对所述支撑针的 温度进行独立的控制， 从而使所述基板与所述支撑针的温度保持一致， 并使得 所述基板上的支撑针的支撑位置与该支撑位置的周围受热均匀， 进而使得所述 基板整体受热均匀。
10、 根据权利要求 9所述的支撑装置， 其中， 所述冷却系统包括： 循环管， 由所述支撑针的底部的进水孔进入， 环绕到所述支撑体的顶部， 并经由所述支撑针的底部的出水孔走出； 冷却水， 流动于所述循环管； 流量控制阀， 设置于未进入所述支撑针的底部的进水孔的循环管上， 并连 接至所述温控系统， 以根据所述温控系统的控制而改变开关状态。
11、 根据权利要求 9所述的支撑装置， 其中， 所述支撑针的材质为金属。
12、 根据权利要求 9所述的支撑装置， 其中， 所述温控系统包括： 侦测系统， 侦测所述基板的温度与所述支撑针的温度； 控制系统， 基于所述基板的温度与所述支撑针的温度的比较结果， 控制所 述支撑针的温度。
13、 根据权利要求 12所述的支撑装置， 其中， 所述侦测系统包括： 第一温度探测器， 位于所述基板下方并远离所述支撑针， 以探测所述基板 的温度； 第三温度探测器， 设于所述支撑针的顶部， 以探测所述支撑针的顶部的温
14、 根据权利要求 13所述的支撑装置， 其中， 所述侦测系统进一歩包括: 第二温度探测器， 位于所述基板下方并靠近所述支撑针， 以探测所述基板 上的所述支撑针的支撑位置周围的温度。
15、 根据权利要求 14所述的支撑装置， 其中， 所述第一温度探测器和第 二温度探测器均为红外温度计， 所述第三温度探测器为热电偶温度计。
16、 根据权利要求 12所述的温控针， 其中， 所述控制系统包括加热控制 系统和冷却控制系统， 其中， 当所述基板的温度高于所述支撑针的温度时， 所述加热控制系统对 所述支撑针进行加热； 当所述基板的温度低于所述支撑针的温度时， 所述冷却 控制系统对所述支撑针进行冷却。
17、 一种用于紫外线硬化配向中支撑基板的方法， 其中， 包括歩骤： 利用多个温控针支撑所述基板； 探测并比较所述基板的温度和所述温控针的温度；
基于比较结果， 通过独立的控制温控针的温度， 以使基板的温度与温控针 的温度保持一致， 并使得基板上的温控针的支撑位置与该支撑位置的周围受热 均匀， 进而使得基板整体受热均匀。
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