WO2014167947A1 - Manufacturing method for semiconductor device - Google Patents

Manufacturing method for semiconductor device Download PDF

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Publication number
WO2014167947A1
WO2014167947A1 PCT/JP2014/057175 JP2014057175W WO2014167947A1 WO 2014167947 A1 WO2014167947 A1 WO 2014167947A1 JP 2014057175 W JP2014057175 W JP 2014057175W WO 2014167947 A1 WO2014167947 A1 WO 2014167947A1
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WO
WIPO (PCT)
Prior art keywords
sealing sheet
semiconductor substrate
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
PCT/JP2014/057175
Other languages
French (fr)
Japanese (ja)
Inventor
山本　雅之
伸一郎 森
Original Assignee
日東電工株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Priority to CN201480020186.5A priority Critical patent/CN105122433A/en
Priority to KR1020157031649A priority patent/KR20150140340A/en
Priority to SG11201508204RA priority patent/SG11201508204RA/en
Publication of WO2014167947A1 publication Critical patent/WO2014167947A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape

Definitions

  • the present invention relates to a method of manufacturing a semiconductor device for sealing a semiconductor element by attaching a sealing sheet on which a sealing layer made of a resin composition is formed.
  • the semiconductor chip After enclosing one semiconductor chip with a frame, the semiconductor chip is sandwiched from both sides of the semiconductor chip by a first sealing resin sheet and a second sealing resin sheet made of a prepreg impregnated with resin.
  • a semiconductor device is manufactured by sealing a semiconductor chip (see Patent Document 1).
  • semiconductor devices tend to be miniaturized due to the demand for high-density mounting accompanying rapid development of applications. Therefore, after the semiconductor wafer is divided into semiconductor elements by the dicing process, the semiconductor elements are individually sealed with resin, resulting in a problem that throughput is lowered and production efficiency is lowered.
  • the present invention has been made in view of such circumstances, and it is an object of the present invention to provide a method of manufacturing a semiconductor device that can manufacture the semiconductor device with high accuracy while improving the production speed of the semiconductor device. Main purpose.
  • the present inventors obtained the following knowledge as a result of intensive studies by repeating experiments and simulations in order to solve the inconvenience.
  • This invention has the following configuration in order to achieve such an object.
  • a manufacturing method of a semiconductor device for manufacturing a semiconductor device by attaching a sealing sheet on which a sealing layer made of a resin composition is formed on a release liner to a semiconductor element, A plurality of sealing sheet pieces cut in accordance with a dividing line surrounding the plurality of semiconductor elements in a distribution area of the plurality of semiconductor elements formed on the semiconductor substrate and having an area smaller than the area of the distribution area.
  • Pasting process to paste the entire surface of the distribution area of the semiconductor element A curing process for curing the sealing layer; A dividing process of dividing the semiconductor substrate in which the semiconductor element is sealed by the cured sealing layer; It is provided with.
  • a sealing sheet piece means the form of the state by which the peeling liner was attached to the sealing layer.
  • the semiconductor elements can be sealed without unevenness.
  • the semiconductor device can be easily cut from the semiconductor substrate along the portion.
  • the plurality of sealing sheet pieces are smaller in size than the semiconductor substrate, handling at the time of pasting is easy. That is, entrainment of bubbles at the bonding interface between the semiconductor substrate and the sealing sheet can be suppressed. Accordingly, generation of voids in the sealing layer can be suppressed.
  • the pasting process can be performed as follows.
  • a plurality of sealing sheet pieces that are half-cut into a single-sheet sealing sheet having a size equal to or larger than the shape of the semiconductor substrate is attached to the semiconductor substrate, The sealing sheet cut out around the release liner and the sealing sheet piece is released from the semiconductor substrate.
  • a plurality of sealing sheet pieces can be attached to the semiconductor substrate by a single attaching operation.
  • the single-sheet sealing sheet may have the same shape as the semiconductor substrate, or may be larger than the semiconductor substrate.
  • the single-sheet sealing sheet is larger than the semiconductor substrate, a plurality of sealing sheet pieces are attached to the semiconductor substrate while applying tension to the single-sheet sealing sheet, and are peeled off before the cutting process. It is preferable to peel the liner from the sealing sheet.
  • the sealing sheet since tension is applied to the sealing sheet, the sealing sheet does not sag. Therefore, the sealing sheet can be attached to the semiconductor substrate with high accuracy while suppressing entrainment of bubbles at the bonding interface between the sealing sheet and the semiconductor substrate.
  • a plurality of sealing sheet pieces are temporarily bonded to a single wafer release liner having a size equal to or larger than the shape of the semiconductor substrate, Affixing a plurality of sealing sheet pieces to the semiconductor substrate through the release liner of the sheet, Before the dividing process, the release liner of the single wafer is peeled from the sealing sheet piece.
  • a plurality of sealing sheet pieces can be attached to the semiconductor substrate by a single attaching operation, as in the above embodiment.
  • the single wafer release liner may have the same shape as the semiconductor substrate, or may be larger than the semiconductor substrate.
  • the single-sheet release liner is larger than the semiconductor substrate, apply multiple pieces of sealing sheet to the semiconductor substrate while applying tension to the release liner, and seal the release liner before the cutting process. Peeling from the sheet is preferred.
  • the sealing sheet piece since tension is applied to the release liner, the sealing sheet piece does not sag. Therefore, the sealing sheet piece can be attached to the semiconductor substrate while suppressing bubble entrainment and wrinkle generation at the bonding interface between the sealing sheet piece and the semiconductor substrate.
  • the warpage of the semiconductor substrate can be suppressed by attaching a sealing sheet piece having a smaller shrinkage rate than the other sealing sheet pieces to a portion where the warpage of the semiconductor substrate is likely to occur.
  • sealing sheet pieces of different sizes and shapes may be attached depending on the distribution region of the semiconductor element.
  • the shrinkage distance of the sealing layer becomes smaller as the sealing sheet becomes smaller and the end side becomes shorter. That is, the sealing sheet pieces of different sizes and shapes can be mixed and pasted to adjust the shrinkage of the sealing layer and suppress warping of the semiconductor substrate.
  • the moving distance for extracting bubbles entrained between the sealing sheet and the semiconductor substrate is shorter than that of the sealing sheet having the same size as the semiconductor substrate. Therefore, bubbles can be removed from the adhesion interface more reliably in a short time.
  • the semiconductor device can be accurately manufactured while improving the production speed of the semiconductor device.
  • the sealing sheet T is supplied with the raw fabric roll which wound the elongate sealing sheet T, for example, as shown in FIG.1 and FIG.2. Further, the sealing sheet T is provided with a protective first release liner S1 and a second release liner S2 on both surfaces of the sealing layer M.
  • the sealing layer M is formed into a sheet shape from a sealing material.
  • the sealing material include thermosetting silicone resin, epoxy resin, thermosetting polyimide resin, phenol resin, urea resin, melamine resin, unsaturated polyester resin, diallyl phthalate resin, thermosetting urethane resin, and the like.
  • a curable resin is mentioned.
  • the above-mentioned thermosetting resin and the thermosetting resin composition which contains an additive in an appropriate ratio can also be mentioned.
  • Examples of the additive include a filler and a phosphor.
  • Examples of the filler include inorganic fine particles such as silica, titania, talc, alumina, aluminum nitride, and silicon nitride, and organic fine particles such as silicone particles.
  • the phosphor has a wavelength conversion function, and examples thereof include a yellow phosphor capable of converting blue light into yellow light, and a red phosphor capable of converting blue light into red light. .
  • Examples of the yellow phosphor include garnet phosphors such as Y 3 Al 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce).
  • Examples of the red phosphor include nitride phosphors such as CaAlSiN 3 : Eu and CaSiN 2 : Eu.
  • the sealing layer M is adjusted to a semi-solid state before sealing the semiconductor element. Specifically, when the sealing material contains a thermosetting resin, for example, complete curing (C It is adjusted before being staged, that is, in a semi-cured (B stage) state.
  • a thermosetting resin for example, complete curing (C It is adjusted before being staged, that is, in a semi-cured (B stage) state.
  • the dimensions of the sealing layer M are appropriately set according to the dimensions of the semiconductor element and the substrate. Specifically, when the sealing sheet is prepared as a long sheet, the length in the left-right direction of the sealing layer, that is, the width is, for example, 100 mm or more, preferably 200 mm or more, for example, 1500 mm. Hereinafter, it is preferably 700 mm or less.
  • the thickness of the sealing layer is appropriately set according to the size of the semiconductor element, and is, for example, 30 ⁇ m or more, preferably 100 ⁇ m or more, and for example, 3000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • first release liner S1 and the second release liner S2 include polymer sheets such as polyethylene sheets, polyester sheets (such as PET), polystyrene sheets, polycarbonate sheets, and polyimide sheets, such as ceramic sheets, such as metal foil. It is done.
  • the contact surface in contact with the sealing layer can be subjected to a release treatment such as a fluorine treatment.
  • the dimensions of the first release liner and the second release liner are appropriately set according to the release conditions, and the thickness is, for example, 15 ⁇ m or more, preferably 25 ⁇ m or more, and for example, 125 ⁇ m or less, preferably 75 ⁇ m. It is as follows.
  • the manufacturing process of a semiconductor device includes a cutting process, a pasting process, a curing process, and a dicing process.
  • the cutting process includes a sheet supply unit 1, a cutting mechanism 2, a sheet collection unit 3, and the like.
  • the sheet supply unit 1 guides the sealing sheet T with the release liners S1 and S2 on both surfaces fed from the supply bobbin 4 by the feed roller 5 and the guide roller 6 and guides them to the cutting mechanism 2.
  • the cutting mechanism 2 includes, for example, a cutting table 7, a first cutting mechanism 8, a second cutting mechanism 9, and the like.
  • the cutting table 7 is composed of a chuck table that is larger than the width of the sealing sheet T.
  • the first cutting mechanism 8 is a plotter cutting unit that horizontally moves and moves up and down on the movable frame 10 by the movable base 11 mounted on the movable frame 10 that moves back and forth along the guide rail R in a state of straddling the cutting table 7. 12 or the like.
  • the plotter cutting unit 12 includes a cutter 13 having a blade edge facing downward. Therefore, the plotter cutting unit 12 leaves only the release liner S2 on the back surface side, and half-cuts the sealing sheet T into a predetermined shape of the sealing sheet piece CT as shown in FIG.
  • a sealing sheet piece says the form of the state by which the peeling liner was attached to the sealing layer.
  • the second cutting mechanism 9 is equipped with a support arm 16 at the lower part of a movable table that can be moved up and down so as to be capable of driving and turning about a vertical axis X located on the center of the cutting table 7.
  • a cutter 18 having a blade edge facing downward is mounted on a cutter unit 17 provided on the free end side of the support arm 16.
  • the support arm 16 is rotated around the longitudinal axis X so that the cutter 18 cuts out the sealing sheet T in substantially the same shape as the semiconductor substrate. Therefore, the single-sheet sealing sheet T after cutting does not completely match notches and orientation flats formed on the semiconductor substrate, but includes a circular sheet covering the notches.
  • the sheet collection unit 3 is configured to wind up the sealing sheet T cut out in the shape of the semiconductor substrate around the collection bobbin 19.
  • a taper-like release plate 14 is provided on the downstream side of the cutting table 7. That is, the sealing sheet T is folded back by the release plate 14 and the sealing sheet T cut out in a circular shape is peeled off.
  • the sealing sheet T is adsorbed and held on the release plate 14 by the transport mechanism 15 having an adsorbing plate.
  • the conveyance mechanism 15 is configured to move horizontally in synchronization with the feeding speed of the sealing sheet T, and suck and carry the sealing sheet T peeled off from the peeling plate 14.
  • a sheet mounting table 20 As shown in FIGS. 4 and 5, a sheet mounting table 20, a sheet transport mechanism 21, a liner peeling mechanism 22, a first holding table 23, a substrate transport mechanism 24, and a sheet pasting mechanism 25 are arranged in the pasting process. Yes.
  • the sheet mounting table 20 is composed of a chuck table that is larger than the sealing sheet T.
  • the sheet transport mechanism 21 includes a suction plate 26 that can move horizontally and move up and down in the front-rear and left-right directions. That is, a first movable base 28 that moves on the guide rail R1 along the frame 27 extending in the lateral direction of the apparatus main body is provided. A guide rail R ⁇ b> 2 that is horizontally held toward the front and rear of the apparatus main body is provided on the frame 27. A suction plate 26 is provided that can move up and down along a vertical frame that is suspended and supported by a second movable base 30 that can move back and forth along the guide rail R2.
  • the liner peeling mechanism 22 includes a peeling tape supply unit 31, a peeling unit 32, a tape collection unit 33, and a camera 34.
  • the peeling tape supply unit 31 supplies a long peeling tape TS narrower than the sealing sheet T toward the peeling unit 32.
  • the peeling unit 32 includes a peeling roller 35 around which the peeling tape TS is wound.
  • the peeling roller 35 can be lifted and lowered to a position higher than the sheet placing table 20. That is, in the process in which the sealing sheet T is sucked and held by the sheet transport mechanism 21 and transported, the peeling roller 35 presses and sticks the peeling tape TS to the peeling liner S2 on the back surface of the sealing sheet T.
  • the tape recovery unit 33 collects the release tape TS together with the release liner S2 peeled from the sealing sheet T by winding the release tape TS in a state of being attached to the release liner S2 on the back side of the sealing sheet T by the release roller 35.
  • the release tape TS is wound around the bobbin and collected.
  • the camera 34 images the positions of a plurality of half-cut sealing sheet pieces CT of the sealing sheet T peeled off from the second peeling liner S2 from the back surface, and transmits the image data to the control unit 100.
  • the first holding table 23 is composed of a chuck table that is larger than the semiconductor substrate W, as shown in FIGS.
  • the first holding table 23 is configured to rotate around the vertical axis to align the semiconductor substrate W. Further, the first holding table 23 is configured to reciprocate along the guide rail 38 over the mounting position of the semiconductor substrate W and the alignment position on the back side of the apparatus.
  • Two cameras 39 are provided above the alignment position, take an image of the outer shape and cutting line (scribe line) of the semiconductor substrate W, and transmit both image data to the control unit 100.
  • the substrate transport mechanism 24 includes a movable base 42 that moves the apparatus on a guide rail R3 that reaches the sheet sticking mechanism 25 side along a frame 41 that extends in the lateral direction of the apparatus main body.
  • a suction plate 44 that can be lifted and lowered along a vertical frame that is suspended and supported by the movable table 42 is provided.
  • the suction plate 44 is larger than the shape of the semiconductor substrate W.
  • the substrate transport mechanism 24 is configured to reciprocate from the first holding table 23 to the second holding table 45 in a pasting process described later.
  • the pasting process includes a sheet pasting mechanism 25.
  • the sheet sticking mechanism 25 includes a second holding table 45, a chamber 46, and the like.
  • the second holding table 45 is housed in the lower housing 46B of the upper and lower upper housings 46A and 46B constituting the chamber 46.
  • the lower housing 46B is configured to reciprocate between the receiving position of the semiconductor substrate W on the front side of the apparatus main body and below the upper housing 46A along the guide rail 48.
  • the upper housing 46 ⁇ / b> A constituting the chamber 46 is provided in the lift drive mechanism 50.
  • the elevating drive mechanism 50 includes a movable base 53 that can be moved up and down along a rail 52 that is vertically arranged on the back of a vertical wall 51, a movable frame 54 that is supported on the movable base 53 so that the height can be adjusted, and the movable frame 53.
  • An arm 55 extending forward from the frame 54 is provided.
  • An upper housing 46A is mounted on a support shaft 56 that extends downward from the tip of the arm 55.
  • the movable base 53 is adapted to be screwed up and down by rotating the screw shaft 57 forward and backward by a motor 58.
  • a push plate 59 that can be raised and lowered is housed inside the upper housing 46A.
  • a heater 60 is embedded in the pressing plate 59.
  • the curing process includes a heating device 61 as shown in FIG.
  • the heating device 61 includes, for example, a third holding table 62 for placing and holding the semiconductor substrate W and a heating plate 64 in which a heater 63 that can be raised and lowered is embedded.
  • the dicing process includes a cutting device that divides the semiconductor substrate W bonded and held via a dicing tape into semiconductor devices.
  • the long sealing sheet T adsorbed and held on the cutting table 7 is smaller than the entire area of the plurality of semiconductor element distribution regions formed on the semiconductor substrate by the plotter cutting unit 12.
  • half cut into sealing sheet piece CT according to the parting line which encloses several semiconductor elements As shown in FIG. 1, the plurality of sealing sheet pieces CT are laid out in advance so as to cover the entire distribution region of the semiconductor elements without overlapping each other. That is, half-cutting is performed in accordance with the size of the line inside the dividing line width.
  • the distribution region is a region in which a plurality of semiconductor elements scheduled to be separated into semiconductor substrates are arranged, and as shown by a one-dot chain line in FIG. DA
  • the sealing sheet T on which the sealing sheet piece CT is formed is cut out into the shape of the semiconductor substrate W by the second cutting mechanism 9.
  • suction of the cutting table 7 is cancelled
  • the long sealing sheet T cut out in a circular shape is wound and collected by the sheet collecting unit 3.
  • the peeling roller 35 rises slightly from the sheet mounting table 20 to a position in the transport direction that is out of the sheet mounting table 20 in the process of horizontal transport.
  • the release tape TS wound around the release roller 35 is pressed against the second release liner S2 on the back surface side of the sealing sheet T as shown in FIG.
  • the second release liner S ⁇ b> 2 is peeled from the sealing sheet T while winding the release tape TS at a speed synchronized with the transport speed of the sheet transport mechanism 21.
  • the peeled second peeling liner S2 is wound and collected on the collecting bobbin together with the peeling tape TS.
  • the sealing sheet T When the sealing sheet T reaches above the camera 34, the outer shape of the sealing sheet T and the layout image of the sealing sheet T are captured. The image data is transmitted to the control unit 100.
  • the sheet conveying mechanism 21 moves onto the first holding table 23 while holding the sealing sheet T by suction.
  • the sealing sheet T When the sealing sheet T is placed on the sheet placement table 20, the semiconductor substrate W is placed on the first holding table 23 substantially simultaneously.
  • the first holding table 23 holding the semiconductor substrate W by suction moves to the alignment position, and the surface of the first holding table 23 is imaged by the camera 39.
  • the captured image data is transmitted to the control unit 100.
  • the first holding stage 23 returns to the placement position.
  • the outline of the layout of the sealing sheet piece CT obtained by the image analysis processing of the control unit 100 matches the line inside the dividing line of the semiconductor elements of the semiconductor substrate W, and the entire distribution area of the semiconductor elements
  • the semiconductor substrate W is aligned so as to cover the substrate. Alignment is performed by rotating the first holding table 23 around the vertical axis.
  • the sealing sheet T conveyed by the sheet conveyance mechanism 21 is disposed to face the semiconductor substrate W as shown in FIG. Thereafter, as shown in FIG. 11, the suction plate 26 is lowered to a predetermined height. At this time, the sealing sheet T is moderately pressed and temporarily bonded to the semiconductor substrate W. When the temporary pressure bonding of the sealing sheet T is completed, the sheet conveying mechanism 21 returns to the sheet mounting table 20 side.
  • the semiconductor substrate W to which the sealing sheet T has been temporarily press bonded is sucked and held by the substrate transfer mechanism 24 and transferred to the second holding table 45.
  • the substrate transport mechanism 24 rises and returns to the first holding table 23 side.
  • the second holding table 45 moves to below the upper housing 46A while holding the semiconductor substrate W by suction.
  • the lower end of the upper housing 46A is lowered to a position where it abuts against the lower housing 46B. That is, the chamber 46 is formed. Thereafter, the pressure in the chamber 46 is reduced. Further, the pressing plate 59 is lowered, the sealing sheet T is pressed and heated, and finally pressed onto the semiconductor substrate W. At this point, the sealing layer M is not completely cured.
  • the inside of the chamber 46 is returned to atmospheric pressure, and the upper housing 46A is opened.
  • the lower housing 46B returns to the substrate transfer position together with the second holding table 45.
  • the semiconductor substrate W to which the sealing sheet T shown in FIG. 14 is finally bonded is peeled off from the unnecessary sealing layer M and the release liner, and is conveyed to the curing processing unit.
  • the heating plate 64 is brought into contact with the semiconductor substrate W placed on the third holding table 62 and heated to heat and cure the sealing layer M. That is, after raising to a predetermined temperature, the sealing layer M is completely cured by cooling to the glass transition point.
  • the semiconductor substrate W is bonded and held on the dicing tape DT via the ring frame f.
  • the semiconductor substrate W is conveyed to a dicing process, and the semiconductor substrate W is cut by a cutter along a cutting line.
  • the dividing process is completed, as shown in FIG. 16, only the substrate holding table 85 is slightly raised and the dicing tape is pushed up from the back surface side to be expanded and completely separated for each semiconductor device CP. Thus, a series of processing is completed, and the same processing is repeated.
  • the semiconductor substrate is divided into a plurality of sealing sheet pieces CT cut into an area smaller than the entire area of the distribution region in which the semiconductor element is formed, and is attached to the entire surface of the distribution region of the semiconductor element. W warpage can be suppressed. That is, when one sealing sheet T having the same shape as the semiconductor substrate is attached to the semiconductor substrate W, the sealing sheet T contracts toward one direction of the center of the semiconductor substrate W. However, when the plurality of sealing sheet pieces CT are divided and attached to the semiconductor substrate W, the shrinkage direction is dispersed and warping of the semiconductor substrate W is suppressed.
  • the sealing sheet piece CT is smaller in size than the semiconductor substrate W, it is easy to handle at the time of pasting. That is, entrainment of bubbles at the adhesion interface between the semiconductor substrate W and the sealing sheet piece CT can be suppressed. Accordingly, generation of voids in the sealing layer can be suppressed.
  • the present invention can also be implemented in the following forms.
  • the single-sheet sealing sheet T is not limited to the shape of the semiconductor substrate W.
  • a sheet formed by half-cutting a sealing sheet piece CT on a single-sheet sealing sheet T cut into a larger rectangle than the semiconductor substrate W may be used.
  • the sheet attaching step it is preferable to attach the sealing sheet T to the semiconductor substrate W in a state where tension is applied.
  • the sealing sheet T is attached to the sticking jig 70 shown in FIG.
  • the affixing jig 70 is biased in the direction in which the clamp plate 72 presses the receiving plate 74 by the coil spring 73 at both ends of the rectangular frame 71.
  • a tip of a ball shaft 76 penetrating a fixed block 75 fixed to the frame frame 71 is brought into contact with one lower portion of the inverted L-shaped receiving plate 74.
  • the receiving plate 74 is biased outward by a coil spring 77 between the ball shaft 76 and the fixed block 75.
  • a nut 78 is screwed to the other end side of the ball shaft 76. By rotating the nut 78 forward and backward, the protruding distance of the ball shaft 76 changes, and the outward biasing force of the clamp plate 72 and the receiving plate 74 can be adjusted.
  • the clamp plate 72 is opened against the spring bias, and the sealing sheet T is placed on the frame frame 71. Thereafter, as shown in FIGS. 20 and 21, both ends of the sealing sheet are clamped by the clamp plate 72.
  • the semiconductor substrate W on the first holding table 23 that has undergone the alignment process and the attaching jig 70 are opposed to each other, and the attaching jig 70 is lowered to a predetermined height as shown in FIG.
  • the positioning pins P erected on the second holding table 45 engage with the positioning holes 79 of the attaching jig 70 and are aligned. In this state, a predetermined load is applied to the sealing sheet T and temporarily bonded to the semiconductor substrate W.
  • the sticking jig 70 is sucked by the substrate transport mechanism 24 changed from the suction plate 44 to the suction pad 80, and transported and placed on the second holding table 45.
  • the positioning pins P formed on the second holding table 45 are inserted into the positioning holes 79 formed in the frame frame 71 of the attaching jig 70 in the same manner as when the attaching jig 70 is set on the first holding table 23. Engage and align.
  • the lower housing 46B housing the second holding table 45 is moved to a position below the upper housing 46A to form a chamber 46 as shown in FIG. While reducing the pressure inside the chamber 46, the sealing sheet T is finally bonded to the semiconductor substrate W while being heated by the pressing plate 59.
  • the second holding table 45 is moved to the delivery position of the substrate and cooled for a predetermined time. Thereafter, as shown in FIG. 26, the adhering jig 70 is adsorbed and raised by the substrate transport mechanism 24, so that an unnecessary sealing layer M having reduced adhesive strength remains on the first peeling liner S1 side. It is peeled from the semiconductor substrate W.
  • the semiconductor substrate W to which the sealing layer M is finally bonded in the shape of the sealing sheet piece CT is divided into semiconductor devices through a curing process and a dicing process in the same manner as in the above-described embodiment.
  • the sealing sheet T is attached to the semiconductor substrate W in a state where an appropriate tension is applied to the sealing sheet T by clamping the portion protruding from the outer shape of the semiconductor substrate W by the attaching jig 70. Can do. That is, since the sealing sheet T is not loosened at the time of sticking, it is possible to suppress the occurrence of bubbles or the generation of wrinkles at the adhesive interface with the semiconductor substrate W.
  • the second release liner S2 on the back surface side is peeled off from the sealing sheet piece CT cut out in a predetermined shape from the long sealing sheet T, and is sequentially attached to a predetermined position of the semiconductor substrate W. You may do it.
  • a sealing sheet in which a sealing sheet piece CT cut in advance in a predetermined shape is temporarily bonded to a release liner cut in a shape of a semiconductor substrate or larger than the semiconductor substrate in a predetermined layout may be used.
  • the second release liner S2 is peeled from the back surface and aligned with the semiconductor substrate W, and then temporarily bonded to the semiconductor substrate W. Just do it. Subsequent processing steps are the same as those in the main embodiment.
  • both ends of the release liner are clamped to the affixing jig 70 to apply an appropriate tension.
  • the second release liner S2 is peeled off from the back surface of the sealing sheet piece CT, aligned with the semiconductor substrate W, and temporarily bonded. Thereafter, the same processing as in the above modification is performed.
  • the sealing sheet pieces CT having different characteristics can be attached to the semiconductor substrate W.
  • the semiconductor substrate W is selectively used in a region where warpage is likely to occur and a region where it is difficult to occur.
  • the sealing sheet piece CT in which the sealing layer M having a smaller shrinkage rate than the sealing layer M of the sealing sheet piece CT to be attached to another part is attached to a part where warpage is likely to occur. According to this method, the warpage amount of the semiconductor substrate W can be adjusted.
  • the sealing sheet T is selectively used for cutting the sealing sheet piece CT and the single-sheet sealing sheet T by the first cutting mechanism 8 and the second cutting mechanism 9. You may comprise so that it may punch or half-cut with the Thomson blade which shaped the layout of W and sealing sheet piece CT.
  • the sealing layer may be hardened in the sheet attaching step.
  • the shape of the semiconductor substrate W is not limited to a circle. Therefore, the semiconductor substrate W may be a quadrangle such as a square or a rectangle.
  • the sealing sheet T having the same shape as the single-wafer semiconductor substrate may be larger in size than the semiconductor substrate, or the semiconductor fits from the outside of the distribution region to the outer periphery of the semiconductor substrate.
  • the size may be smaller than the substrate.
  • the present invention is suitable for accurately manufacturing a semiconductor device while improving the production speed of the semiconductor device.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Across the entire surface of a distribution area for a plurality of semiconductor elements, which are formed on a semiconductor substrate, a plurality of sealing sheet pieces of areas smaller than the distribution area and which are cut in accordance with scribe lines surrounding the plurality of the semiconductor elements, are attached. A semiconductor substrate (W), in which the sealing layer is cured so as to seal the semiconductor elements therein, is held in a ring frame via dicing tape and subsequently transported to a dicing step, cut along the scribe lines, and the dicing tape is expanded so as to manufacture a semiconductor device.

Description

半導体装置の製造方法Manufacturing method of semiconductor device
　本発明は、樹脂組成物からなる封止層の形成された封止シートを貼り付けて半導体素子を封止する半導体装置を製造する方法に関する。 The present invention relates to a method of manufacturing a semiconductor device for sealing a semiconductor element by attaching a sealing sheet on which a sealing layer made of a resin composition is formed.
　１個の半導体チップの周りを枠体で囲んだ後に、樹脂を含浸させたプリプレグから成る第１の封止用樹脂シートと第２の封止用樹脂シートによって当該半導体チップの両面のそれぞれから挟み込み、半導体チップを封止して半導体装置を製造している（特許文献１を参照）。 After enclosing one semiconductor chip with a frame, the semiconductor chip is sandwiched from both sides of the semiconductor chip by a first sealing resin sheet and a second sealing resin sheet made of a prepreg impregnated with resin. A semiconductor device is manufactured by sealing a semiconductor chip (see Patent Document 1).
特開平５－２９１３１９号公報JP-A-5-291319
　しかしながら、上記従来方法では次のような問題が生じている。 However, the above conventional method has the following problems.
　すなわち、近年、アプリケーションの急速な進歩に伴う高密度実装の要求により、半導体装置が小型化される傾向にある。したがって、ダイシング処理によって半導体ウエハを半導体素子に分断した後に、半導体素子を個々に樹脂で封止しているので、スループットが低下し、ひいては生産効率を低下させるといった不都合が生じている。 That is, in recent years, semiconductor devices tend to be miniaturized due to the demand for high-density mounting accompanying rapid development of applications. Therefore, after the semiconductor wafer is divided into semiconductor elements by the dicing process, the semiconductor elements are individually sealed with resin, resulting in a problem that throughput is lowered and production efficiency is lowered.
　本発明はこのような事情に鑑みてなされたものであって、半導体装置の生産速度を向上させつつも、半導体装置を精度よく製造することを可能にする半導体装置の製造方法を提供することを主たる目的とする。 The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a method of manufacturing a semiconductor device that can manufacture the semiconductor device with high accuracy while improving the production speed of the semiconductor device. Main purpose.
　そこで、本発明者たちは、当該不都合を解決するために、実験やシミュレーションを繰り返して鋭意検討した結果、以下の知見を得た。 Therefore, the present inventors obtained the following knowledge as a result of intensive studies by repeating experiments and simulations in order to solve the inconvenience.
　半導体基板の全面に樹脂組成物からなる封止層の形成された枚葉の封止シートを貼り付けて硬化させた後に、当該半導体装置に分断することを試みた。しかしながら、当該方法では、次のような新たな問題が発生した。先ず、封止シートの封止層の加熱硬化処理後の冷却過程で、封止層の収縮によって半導体基板に反りが発生した。当該反りは、半導体基板を吸着して搬送する過程で搬送エラーを発生させる。また、半導体基板の反り量が大きい場合、半導体基板を押圧して当該反りを矯正すると半導体基板が破損する。さらに、大面積の封止シートを貼り付ける場合、貼付け過程で半導体基板との接着界面に気泡が巻き込まれやすく、封止層内にボイドを発生せ、半導体装置が不良品になる。 An attempt was made to divide into a semiconductor device after a single-sheet sealing sheet having a sealing layer made of a resin composition was applied to the entire surface of the semiconductor substrate and cured. However, this method has the following new problem. First, in the cooling process after the heat curing treatment of the sealing layer of the sealing sheet, the semiconductor substrate warped due to the shrinkage of the sealing layer. The warp causes a transport error in the process of sucking and transporting the semiconductor substrate. Further, when the amount of warpage of the semiconductor substrate is large, the semiconductor substrate is damaged when the semiconductor substrate is pressed to correct the warpage. Furthermore, when a large-area sealing sheet is pasted, bubbles are likely to be caught in the bonding interface with the semiconductor substrate in the pasting process, voids are generated in the sealing layer, and the semiconductor device becomes a defective product.
　この発明は、このような目的を達成するために、次のような構成をとる。 This invention has the following configuration in order to achieve such an object.
　すなわち、剥離ライナに樹脂組成物からなる封止層の形成された封止シートを半導体素子に貼り付けて半導体装置を製造する半導体装置の製造方法であって、
　半導体基板に形成された複数個の前記半導体素子の分布領域に当該分布領域の面積よりも小さい面積で、かつ、複数個の半導体素子を囲う分断ラインに合わせて切断した複数枚の封止シート片を当該半導体素子の分布領域の全面に貼り付ける貼付け過程と、
　前記封止層を硬化させる硬化過程と、
　硬化した前記封止層によって半導体素子が封止された半導体基板を分断する分断過程と、
　を備えたことを特徴とする。 That is, a manufacturing method of a semiconductor device for manufacturing a semiconductor device by attaching a sealing sheet on which a sealing layer made of a resin composition is formed on a release liner to a semiconductor element,
A plurality of sealing sheet pieces cut in accordance with a dividing line surrounding the plurality of semiconductor elements in a distribution area of the plurality of semiconductor elements formed on the semiconductor substrate and having an area smaller than the area of the distribution area. Pasting process to paste the entire surface of the distribution area of the semiconductor element,
A curing process for curing the sealing layer;
A dividing process of dividing the semiconductor substrate in which the semiconductor element is sealed by the cured sealing layer;
It is provided with.
　（作用・効果）　上記方法によれば、半導体素子が形成された分布領域の全体の面積よりも小さい面積に切断した複数枚の封止シート片に分けて当該半導体素子の分布領域に貼り付けるので、封止シート片が半導体基板上で個々に収縮する。半導体基板と略同形状の１枚の封止シートを半導体基板に貼り付けた場合、当該封止シートは、半導体基板の中心の一方向に向かって収縮する。しかしながら、この方法のように、複数枚の封止シート片を貼り付けた場合、封止シート片の収縮方向が分散されるので、半導体基板の反りが抑制される。なお、ここで分布領域とは、半導体基板を個片化する予定の複数個の半導体素子が配置されており、その最外周部の切断予定ラインを含む領域である。なお、本発明において、封止シート片とは、封止層に剥離ライナが添設された状態の形態をいう。 (Function / Effect) According to the above method, since a plurality of sealing sheet pieces cut into an area smaller than the entire area of the distribution region in which the semiconductor elements are formed are divided and pasted on the distribution region of the semiconductor elements. The sealing sheet pieces shrink individually on the semiconductor substrate. When one sealing sheet having substantially the same shape as the semiconductor substrate is attached to the semiconductor substrate, the sealing sheet contracts in one direction at the center of the semiconductor substrate. However, when a plurality of sealing sheet pieces are attached as in this method, the shrinkage direction of the sealing sheet pieces is dispersed, so that warpage of the semiconductor substrate is suppressed. Here, the distribution region is a region including a plurality of semiconductor elements scheduled to be separated into semiconductor substrates and including a planned cutting line at the outermost periphery. In addition, in this invention, a sealing sheet piece means the form of the state by which the peeling liner was attached to the sealing layer.
　また、複数枚の封止シート片は、半導体基板の分断ラインに合わせた外形を有するので、半導体素子を偏りなく封止することができる。また、隣接する封止シート片同士の間が分断ラインに相当するので、当該部位に沿って半導体基板から半導体装置を容易に切断することができる。 Moreover, since the plurality of sealing sheet pieces have an outer shape matched to the dividing line of the semiconductor substrate, the semiconductor elements can be sealed without unevenness. Moreover, since between the adjacent sealing sheet pieces corresponds to a dividing line, the semiconductor device can be easily cut from the semiconductor substrate along the portion.
　また、複数枚の封止シート片は、半導体基板よりもサイズが小さいので、貼付け時の取り扱いが容易である。すなわち、半導体基板と封止シートの接着界面への気泡の巻き込みを抑制することができる。したがって、封止層内でのボイドの発生を抑制することができる。 Moreover, since the plurality of sealing sheet pieces are smaller in size than the semiconductor substrate, handling at the time of pasting is easy. That is, entrainment of bubbles at the bonding interface between the semiconductor substrate and the sealing sheet can be suppressed. Accordingly, generation of voids in the sealing layer can be suppressed.
　なお、この方法において、貼付け過程は、次のようにして実施することができる。 In this method, the pasting process can be performed as follows.
　例えば、一実施形態として、半導体基板の形状以上の大きさを有する枚葉の封止シートにハーフカットされた複数枚の封止シート片を半導体基板に貼り付け、
　前記剥離ライナおよび封止シート片周囲の切り抜かれた封止シートを半導体基板から剥離する。 For example, as one embodiment, a plurality of sealing sheet pieces that are half-cut into a single-sheet sealing sheet having a size equal to or larger than the shape of the semiconductor substrate is attached to the semiconductor substrate,
The sealing sheet cut out around the release liner and the sealing sheet piece is released from the semiconductor substrate.
　この方法によれば、１回の貼り付け動作で複数枚の封止シート片を半導体基板に貼り付けることができる。なお、枚葉の封止シートは、半導体基板と同じ形状であってもよいし、半導体基板よりも大きいサイズであってもよい。 According to this method, a plurality of sealing sheet pieces can be attached to the semiconductor substrate by a single attaching operation. Note that the single-sheet sealing sheet may have the same shape as the semiconductor substrate, or may be larger than the semiconductor substrate.
　枚葉の封止シートが、半導体基板よりも大きいサイズの場合、枚葉の封止シートに張力を付与しながら複数枚の封止シート片を半導体基板に貼り付け、分断過程の前に、剥離ライナを封止シートから剥離することが好ましい。 When the single-sheet sealing sheet is larger than the semiconductor substrate, a plurality of sealing sheet pieces are attached to the semiconductor substrate while applying tension to the single-sheet sealing sheet, and are peeled off before the cutting process. It is preferable to peel the liner from the sealing sheet.
　この方法によれば、封止シートに張力が付与されているので、当該封止シートに弛みが生じない。したがって、封止シートと半導体基板との接着界面への気泡の巻き込みを抑制しながら当該封止シートを半導体基板に精度よく貼り付けることができる。 According to this method, since tension is applied to the sealing sheet, the sealing sheet does not sag. Therefore, the sealing sheet can be attached to the semiconductor substrate with high accuracy while suppressing entrainment of bubbles at the bonding interface between the sealing sheet and the semiconductor substrate.
　他の実施形態として、半導体基板の形状以上の大きさを有する枚葉の剥離ライナに複数枚の封止シート片を仮接着し、
　枚葉の前記剥離ライナを介して前記半導体基板に複数枚の封止シート片を貼り付け、
　前記分断過程の前に、枚葉の前記剥離ライナを封止シート片から剥離する。 As another embodiment, a plurality of sealing sheet pieces are temporarily bonded to a single wafer release liner having a size equal to or larger than the shape of the semiconductor substrate,
Affixing a plurality of sealing sheet pieces to the semiconductor substrate through the release liner of the sheet,
Before the dividing process, the release liner of the single wafer is peeled from the sealing sheet piece.
　この方法においても、上記実施形態と同様に、１回の貼り付け動作で複数枚の封止シート片を半導体基板に貼り付けることができる。なお、枚葉の剥離ライナは、半導体基板と同じ形状であってもよいし、半導体基板よりも大きいサイズであってもよい。 Also in this method, a plurality of sealing sheet pieces can be attached to the semiconductor substrate by a single attaching operation, as in the above embodiment. Note that the single wafer release liner may have the same shape as the semiconductor substrate, or may be larger than the semiconductor substrate.
　枚葉の剥離ライナが、半導体基板よりも大きいサイズの場合、当該剥離ライナに張力を付与しながら複数枚の封止シート片を半導体基板に貼り付け、分断過程の前に、剥離ライナを封止シートから剥離することが好ましい。 If the single-sheet release liner is larger than the semiconductor substrate, apply multiple pieces of sealing sheet to the semiconductor substrate while applying tension to the release liner, and seal the release liner before the cutting process. Peeling from the sheet is preferred.
　この方法によれば、剥離ライナに張力が付与されているので、封止シート片に弛みが生じない。したがって、封止シート片と半導体基板との接着界面への気泡の巻き込みおよび皺の発生を抑制しながら当該封止シート片を半導体基板に貼り付けることができる。 According to this method, since tension is applied to the release liner, the sealing sheet piece does not sag. Therefore, the sealing sheet piece can be attached to the semiconductor substrate while suppressing bubble entrainment and wrinkle generation at the bonding interface between the sealing sheet piece and the semiconductor substrate.
　なお、当該実施形態において、半導体基板の領域に応じて異なる特性の封止シートを貼り付けてもよい。 In addition, in the said embodiment, you may affix the sealing sheet of a different characteristic according to the area | region of a semiconductor substrate.
　すなわち、半導体基板の反りを発生させやすい部位に、他の封止シート片よりも収縮率の小さい封止シート片を貼り付けることにより、半導体基板の反りを抑制することができる。 That is, the warpage of the semiconductor substrate can be suppressed by attaching a sealing sheet piece having a smaller shrinkage rate than the other sealing sheet pieces to a portion where the warpage of the semiconductor substrate is likely to occur.
　また、半導体素子の分布領域に応じて異なるサイズおよび形状の封止シート片を貼り付けてもよい。 Also, sealing sheet pieces of different sizes and shapes may be attached depending on the distribution region of the semiconductor element.
　この方法によれば、複数枚の同じ封止シート片は、収縮率が同じであっても、封止シートが小形および端辺が短くなる程、封止層の収縮距離が小さくなってゆく。すなわち、異なるサイズおよび形状の封止シート片を混在させて貼り付けることにより、封止層の収縮を調整して半導体基板の反りを抑制することができる。 According to this method, even when the plurality of the same sealing sheet pieces have the same shrinkage rate, the shrinkage distance of the sealing layer becomes smaller as the sealing sheet becomes smaller and the end side becomes shorter. That is, the sealing sheet pieces of different sizes and shapes can be mixed and pasted to adjust the shrinkage of the sealing layer and suppress warping of the semiconductor substrate.
　なお、上記各実施形態において、減圧雰囲気で半導体基板に封止シートを貼り付けることが好ましい。 In each of the above embodiments, it is preferable to attach a sealing sheet to a semiconductor substrate in a reduced pressure atmosphere.
　この方法によれば、封止シートと半導体基板との間に巻き込んだ気泡を抜き出す移動距離が、半導体基板と同じサイズの封止シートに比べて短い。したがって、短時間でより確実に接着界面から気泡を除去することができる。 According to this method, the moving distance for extracting bubbles entrained between the sealing sheet and the semiconductor substrate is shorter than that of the sealing sheet having the same size as the semiconductor substrate. Therefore, bubbles can be removed from the adhesion interface more reliably in a short time.
　本発明の半導体装置の製造方法によれば、半導体装置の生産速度を向上させつつも、半導体装置を精度よく製造することができる。 According to the method for manufacturing a semiconductor device of the present invention, the semiconductor device can be accurately manufactured while improving the production speed of the semiconductor device.
封止シートの原反ロールを示す斜視図である。It is a perspective view which shows the original fabric roll of a sealing sheet. 封止シートの縦断面図である。It is a longitudinal cross-sectional view of a sealing sheet. シート供給工程に配備された装置の概略構成を示す正面図である。It is a front view which shows schematic structure of the apparatus arrange | positioned at the sheet | seat supply process. 貼付け工程に配備された装置の全体構成を示す正面図である。It is a front view which shows the whole structure of the apparatus arrange | positioned at the sticking process. 貼付け工程に配備された装置の全体構成を示す平面図である。It is a top view which shows the whole structure of the apparatus arrange | positioned at the sticking process. ライナ剥離機構の概略構成を示す正面図である。It is a front view which shows schematic structure of a liner peeling mechanism. シート貼付け機構を構成するチャンバの部分断面図である。It is a fragmentary sectional view of the chamber which comprises a sheet sticking mechanism. 加熱装置の概略構成を示す正面図である。It is a front view which shows schematic structure of a heating apparatus. 第２剥離ライナの剥離動作を示す正面図である。It is a front view which shows peeling operation | movement of a 2nd peeling liner. 半導体基板に封止シートを仮接着する動作を示す図である。It is a figure which shows the operation | movement which adheres a sealing sheet temporarily to a semiconductor substrate. 半導体基板に封止シートを仮接着する動作を示す図である。It is a figure which shows the operation | movement which adheres a sealing sheet temporarily to a semiconductor substrate. 封止シートを半導体基板に本接着する動作を示す図である。It is a figure which shows the operation | movement which carries out the main adhesion | attachment of the sealing sheet to a semiconductor substrate. 半導体基板に封止シートを本圧着する動作を示す図である。It is a figure which shows the operation | movement which carries out the main pressure bonding of the sealing sheet to a semiconductor substrate. 不要な封止層と第１剥離ライナを除去した半導体基板を示す平面図である。It is a top view which shows the semiconductor substrate which removed the unnecessary sealing layer and the 1st peeling liner. リングフレームに保持された半導体基板を示す斜視図である。It is a perspective view which shows the semiconductor substrate hold | maintained at the ring frame. 半導体基板を半導体装置に分断する動作を示す図である。It is a figure which shows the operation | movement which divides | segments a semiconductor substrate into a semiconductor device. 変形例の封止シートを示す平面図である。It is a top view which shows the sealing sheet of a modification. 貼付け治具の構成を示す斜視図である。It is a perspective view which shows the structure of a sticking jig | tool. 貼付け治具に封止シートをセットする動作を示す図である。It is a figure which shows the operation | movement which sets a sealing sheet to a sticking jig | tool. 貼付け治具に封止シートをセットする動作を示す図である。It is a figure which shows the operation | movement which sets a sealing sheet to a sticking jig | tool. 貼付け治具に封止シートをセットした状態を示す平面図である。It is a top view which shows the state which set the sealing sheet to the sticking jig | tool. 半導体基板に封止シートを仮圧着する動作を示す図である。It is a figure which shows the operation | movement which carries out pressure bonding of the sealing sheet to a semiconductor substrate. 半導体基板に封止シートを仮圧着する動作を示す図である。It is a figure which shows the operation | movement which carries out pressure bonding of the sealing sheet to a semiconductor substrate. 封止シートの仮圧着された半導体基板の搬送状態を示す図である。It is a figure which shows the conveyance state of the semiconductor substrate by which the sealing sheet was temporarily crimped | bonded. 半導体基板に封止シートを本圧着する動作を示す図である。It is a figure which shows the operation | movement which carries out the main pressure bonding of the sealing sheet to a semiconductor substrate. 不要な封止層と第１剥離ライナを除去する動作を示す図である。It is a figure which shows the operation | movement which removes an unnecessary sealing layer and a 1st peeling liner.
　　３　…　シート切断機構
　２０　…　シート載置台
　２１　…　シート搬送機構
　２２　…　ライナ剥離機構
　２３　…　第１保持テーブル
　２４　…　基板搬送機構
　２５　…　シート貼付け機構
　４５　…　第２保持テーブル　
　４６　…　チャンバ
　５９　…　押圧プレート
　６０　…　ヒータ
　６１　…　加熱装置
　６４　…　加熱プレート
　　Ｔ　…　封止シート
　　Ｃ　…　半導体素子
　ＣＴ　…　封止シート片
　　Ｍ　…　封止層
　Ｓ１，Ｓ２…剥離ライナ
　　Ｗ　…　半導体基板 DESCRIPTION OF SYMBOLS 3 ... Sheet cutting mechanism 20 ... Sheet mounting base 21 ... Sheet conveying mechanism 22 ... Liner peeling mechanism 23 ... First holding table 24 ... Substrate conveying mechanism 25 ... Sheet sticking mechanism 45 ... Second holding table
46 ... Chamber 59 ... Pressing plate 60 ... Heater 61 ... Heating device 64 ... Heating plate T ... Sealing sheet C ... Semiconductor element CT ... Sealing sheet piece M ... Sealing layer S1, S2 ... Release liner W ... Semiconductor substrate
　以下、図面を参照して本発明の一実施例を説明する。表面に複数個の半導体素子が形成された半導体基板に、樹脂組成物からなる封止層の形成された封止シートを貼り付ける場合を例に取って説明する。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. A case where a sealing sheet having a sealing layer made of a resin composition is attached to a semiconductor substrate having a plurality of semiconductor elements formed on the surface will be described as an example.
　＜封止シート＞
　封止シートＴは、例えば、図１および図２に示すように、長尺の封止シートＴを巻き回した原反ロールで供給される。また、当該封止シートＴは、封止層Ｍの両面に保護用の第１剥離ライナＳ１および第２剥離ライナＳ２が添設されている。 <Sealing sheet>
The sealing sheet T is supplied with the raw fabric roll which wound the elongate sealing sheet T, for example, as shown in FIG.1 and FIG.2. Further, the sealing sheet T is provided with a protective first release liner S1 and a second release liner S2 on both surfaces of the sealing layer M.
　封止層Ｍは、封止材料からシート形状に形成されている。封止材料としては、例えば、熱硬化性シリコーン樹脂、エポキシ樹脂、熱硬化性ポリイミド樹脂、フェノール樹脂、ユリア樹脂、メラミン樹脂、不飽和ポリエステル樹脂、ジアリルフタレート樹脂、熱硬化性ウレタン樹脂、などの熱硬化性樹脂が挙げられる。また、封止材料として、上記した熱硬化性樹脂と、添加剤を適宜の割合で含有する熱硬化性樹脂組成物を挙げることもできる。 The sealing layer M is formed into a sheet shape from a sealing material. Examples of the sealing material include thermosetting silicone resin, epoxy resin, thermosetting polyimide resin, phenol resin, urea resin, melamine resin, unsaturated polyester resin, diallyl phthalate resin, thermosetting urethane resin, and the like. A curable resin is mentioned. Moreover, as a sealing material, the above-mentioned thermosetting resin and the thermosetting resin composition which contains an additive in an appropriate ratio can also be mentioned.
　添加剤としては、例えば、充填剤、蛍光体などが挙げられる。充填剤としては、例えば、シリカ、チタニア、タルク、アルミナ、窒化アルミニウム、窒化ケイ素などの無機微粒子、例えば、シリコーン粒子、などの有機微粒子などが挙げられる。蛍光体は、波長変換機能を有しており、例えば、青色光を黄色光に変換することのできる黄色蛍光体、青色光を赤色光に変化することのできる赤色蛍光体などを挙げることができる。黄色蛍光体としては、例えば、Ｙ３Ａｌ５Ｏ１２：Ｃｅ（ＹＡＧ（イットリウム・アルミニウム・ガーネット）：Ｃｅ）などのガーネット型蛍光体が挙げられる。赤色蛍光体としては、例えば、ＣａＡｌＳｉＮ３：Ｅｕ、ＣａＳｉＮ２：Ｅｕなどの窒化物蛍光体などが挙げられる。 Examples of the additive include a filler and a phosphor. Examples of the filler include inorganic fine particles such as silica, titania, talc, alumina, aluminum nitride, and silicon nitride, and organic fine particles such as silicone particles. The phosphor has a wavelength conversion function, and examples thereof include a yellow phosphor capable of converting blue light into yellow light, and a red phosphor capable of converting blue light into red light. . Examples of the yellow phosphor include garnet phosphors such as Y 3 Al 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce). Examples of the red phosphor include nitride phosphors such as CaAlSiN 3 : Eu and CaSiN 2 : Eu.
　封止層Ｍは、半導体素子を封止する前において、半固形状に調整されており、具体的には、封止材料が熱硬化性樹脂を含有する場合には、例えば、完全硬化（Ｃステージ化）する前、つまり、半硬化（Ｂステージ）状態で調整されている。 The sealing layer M is adjusted to a semi-solid state before sealing the semiconductor element. Specifically, when the sealing material contains a thermosetting resin, for example, complete curing (C It is adjusted before being staged, that is, in a semi-cured (B stage) state.
　封止層Ｍの寸法は、半導体素子および基板の寸法に応じて適宜に設定されている。具体的には、封止シートが長尺のシートとして用意される場合における封止層の左右方向における長さ、つまり、幅は、例えば、１００ｍｍ以上、好ましくは、２００ｍｍ以上であり、例えば、１５００ｍｍ以下、好ましくは、７００ｍｍ以下である。また、封止層の厚みは、半導体素子に寸法に対応して適宜に設定され、例えば、３０μｍ以上、好ましくは、１００μｍ以上であり、また、例えば、３０００μｍ以下、好ましくは、１０００μｍ以下である。 The dimensions of the sealing layer M are appropriately set according to the dimensions of the semiconductor element and the substrate. Specifically, when the sealing sheet is prepared as a long sheet, the length in the left-right direction of the sealing layer, that is, the width is, for example, 100 mm or more, preferably 200 mm or more, for example, 1500 mm. Hereinafter, it is preferably 700 mm or less. The thickness of the sealing layer is appropriately set according to the size of the semiconductor element, and is, for example, 30 μm or more, preferably 100 μm or more, and for example, 3000 μm or less, preferably 1000 μm or less.
　第１剥離ライナＳ１および第２剥離ライナＳ２は、例えば、ポリエチレンシート、ポリエステルシート（ＰＥＴなど）、ポリスチレンシート、ポリカーボネートシート、ポリイミドシートなどのポリマーシート、例えば、セラミックシート、例えば、金属箔などが挙げられる。剥離ライナにおいて、封止層と接触する接触面には、フッ素処理などの離型処理を施すこともできる。第１剥離ライナおよび第２剥離ライナの寸法は、剥離条件に応じて適宜に設定され、厚みが、例えば、１５μｍ以上、好ましくは、２５μｍ以上であり、また、例えば、１２５μｍ以下、好ましくは、７５μｍ以下である。 Examples of the first release liner S1 and the second release liner S2 include polymer sheets such as polyethylene sheets, polyester sheets (such as PET), polystyrene sheets, polycarbonate sheets, and polyimide sheets, such as ceramic sheets, such as metal foil. It is done. In the release liner, the contact surface in contact with the sealing layer can be subjected to a release treatment such as a fluorine treatment. The dimensions of the first release liner and the second release liner are appropriately set according to the release conditions, and the thickness is, for example, 15 μm or more, preferably 25 μm or more, and for example, 125 μm or less, preferably 75 μm. It is as follows.
　次に、封止シートＴを半導体基板に貼り付けて半導体装置を製造する工程および装置について説明する。なお、本実施例では、円形の半導体基板に封止シートを貼り付ける場合を例にとって説明する。 Next, a process and an apparatus for manufacturing a semiconductor device by attaching the sealing sheet T to a semiconductor substrate will be described. In this embodiment, a case where a sealing sheet is attached to a circular semiconductor substrate will be described as an example.
　半導体装置の製造工程は、切断工程、貼付け工程、硬化処理工程およびダイシング工程から構成されている。 The manufacturing process of a semiconductor device includes a cutting process, a pasting process, a curing process, and a dicing process.
　切断工程には、図３に示すように、シート供給部１、切断機構２およびシート回収部３などから構成されている。 As shown in FIG. 3, the cutting process includes a sheet supply unit 1, a cutting mechanism 2, a sheet collection unit 3, and the like.
　シート供給部１は、供給ボビン４から繰り出された両面に剥離ライナＳ１、Ｓ２付きの封止シートＴを送りローラ５およびガイドローラ６で案内して切断機構２に導く。 The sheet supply unit 1 guides the sealing sheet T with the release liners S1 and S2 on both surfaces fed from the supply bobbin 4 by the feed roller 5 and the guide roller 6 and guides them to the cutting mechanism 2.
　切断機構２は、例えば、裁断テーブル７、第１切断機構８および第２切断機構９などから構成される。 The cutting mechanism 2 includes, for example, a cutting table 7, a first cutting mechanism 8, a second cutting mechanism 9, and the like.
　裁断テーブル７は、封止シートＴの幅よりも大きいチャックテーブルで構成される。第１切断機構８は、裁断テーブル７に跨った状態で前後にガイドレールＲに沿って移動する可動フレーム１０に装着された可動台１１によって当該可動フレーム１０上で水平移動および昇降するプロッタ切断ユニット１２などから構成されている。当該プロッタ切断ユニット１２は、刃先を下向きにしたカッタ１３を備えている。したがって、プロッタ切断ユニット１２は、裏面側の剥離ライナＳ２のみを残し、図１に示すように、封止シートＴを所定形状の封止シート片ＣＴにハーフカットする。なお、本実施例において、封止シート片は、封止層に剥離ライナが添設された状態の形態をいう。 The cutting table 7 is composed of a chuck table that is larger than the width of the sealing sheet T. The first cutting mechanism 8 is a plotter cutting unit that horizontally moves and moves up and down on the movable frame 10 by the movable base 11 mounted on the movable frame 10 that moves back and forth along the guide rail R in a state of straddling the cutting table 7. 12 or the like. The plotter cutting unit 12 includes a cutter 13 having a blade edge facing downward. Therefore, the plotter cutting unit 12 leaves only the release liner S2 on the back surface side, and half-cuts the sealing sheet T into a predetermined shape of the sealing sheet piece CT as shown in FIG. In addition, in a present Example, a sealing sheet piece says the form of the state by which the peeling liner was attached to the sealing layer.
　第２切断機構９は、昇降可能な可動台の下部に、裁断テーブル７の中心上に位置する縦軸心Ｘ周りに駆動旋回可能に支持アーム１６が装備されている。また、この支持アーム１６の遊端側に備えたカッタユニット１７に、刃先を下向きにしたカッタ１８が装着されている。そして、この支持アーム１６が、縦軸心Ｘ周りに旋回することによって、カッタ１８が半導体基板と略同じ形状に封止シートＴを切り抜くように構成されている。したがって、切断後の枚葉の封止シートＴは、半導体基板に形成されたノッチやオリエンテーションフラットの外形までを完全に一致させたものではなく、ノッチなどを覆う円形のものを含む。 The second cutting mechanism 9 is equipped with a support arm 16 at the lower part of a movable table that can be moved up and down so as to be capable of driving and turning about a vertical axis X located on the center of the cutting table 7. In addition, a cutter 18 having a blade edge facing downward is mounted on a cutter unit 17 provided on the free end side of the support arm 16. The support arm 16 is rotated around the longitudinal axis X so that the cutter 18 cuts out the sealing sheet T in substantially the same shape as the semiconductor substrate. Therefore, the single-sheet sealing sheet T after cutting does not completely match notches and orientation flats formed on the semiconductor substrate, but includes a circular sheet covering the notches.
　シート回収部３は、半導体基板の形状に切り抜かれた封止シートＴを回収ボビン１９に巻き取るよう構成されている。 The sheet collection unit 3 is configured to wind up the sealing sheet T cut out in the shape of the semiconductor substrate around the collection bobbin 19.
　なお，裁断テーブル７の下流側には先細りテーパー状の剥離板１４が配備されている。つまり、剥離板１４で封止シートＴを折り返して円形に切り抜かれた封止シートＴを剥離するように構成されている。封止シートＴは、剥離板１４上で吸着プレートを備えた搬送機構１５によって吸着保持される。搬送機構１５は、封止シートＴの送り速度に同調して水平移動し、剥離板１４から剥離される封止シートＴを吸着して搬出するよう構成されている。 Note that a taper-like release plate 14 is provided on the downstream side of the cutting table 7. That is, the sealing sheet T is folded back by the release plate 14 and the sealing sheet T cut out in a circular shape is peeled off. The sealing sheet T is adsorbed and held on the release plate 14 by the transport mechanism 15 having an adsorbing plate. The conveyance mechanism 15 is configured to move horizontally in synchronization with the feeding speed of the sealing sheet T, and suck and carry the sealing sheet T peeled off from the peeling plate 14.
　貼付け工程には、図４および図５に示すように、シート載置台２０、シート搬送機構２１、ライナ剥離機構２２、第１保持テーブル２３、基板搬送機構２４およびシート貼付け機構２５などが配備されている。 As shown in FIGS. 4 and 5, a sheet mounting table 20, a sheet transport mechanism 21, a liner peeling mechanism 22, a first holding table 23, a substrate transport mechanism 24, and a sheet pasting mechanism 25 are arranged in the pasting process. Yes.
　シート載置台２０は、封止シートＴよりも大形のチャックテーブルで構成されている。 The sheet mounting table 20 is composed of a chuck table that is larger than the sealing sheet T.
　シート搬送機構２１は、前後左右に水平移動および昇降可能な吸着プレート２６を備えている。すなわち、装置本体の横方向に伸びるフレーム２７に沿ったガイドレールＲ１上を移動する第１可動台２８を備える。装置本体の前後に向けて水平保持されたガイドレールＲ２が、フレーム２７に設けられている。ガイドレールＲ２に沿って前後に移動可能な第２可動台３０に懸垂支持された縦フレームに沿って昇降可能な吸着プレート２６を備えている。 The sheet transport mechanism 21 includes a suction plate 26 that can move horizontally and move up and down in the front-rear and left-right directions. That is, a first movable base 28 that moves on the guide rail R1 along the frame 27 extending in the lateral direction of the apparatus main body is provided. A guide rail R <b> 2 that is horizontally held toward the front and rear of the apparatus main body is provided on the frame 27. A suction plate 26 is provided that can move up and down along a vertical frame that is suspended and supported by a second movable base 30 that can move back and forth along the guide rail R2.
　ライナ剥離機構２２は、図６に示すように、剥離テープ供給部３１、剥離ユニット３２、テープ回収部３３およびカメラ３４から構成される。 As shown in FIG. 6, the liner peeling mechanism 22 includes a peeling tape supply unit 31, a peeling unit 32, a tape collection unit 33, and a camera 34.
　剥離テープ供給部３１は、封止シートＴよりも幅の狭い長尺の剥離テープＴＳを剥離ユニット３２に向けて供給する。 The peeling tape supply unit 31 supplies a long peeling tape TS narrower than the sealing sheet T toward the peeling unit 32.
　剥離ユニット３２は、剥離テープＴＳを巻き回される剥離ローラ３５を備えている。当該剥離ローラ３５は、昇降可能であり、シート載置台２０よりも高い位置まで上昇する。すなわち、封止シートＴがシート搬送機構２１によって吸着保持されて搬送される過程で、剥離ローラ３５は、封止シートＴの裏面の剥離ライナＳ２に剥離テープＴＳを押圧して貼り付ける。 The peeling unit 32 includes a peeling roller 35 around which the peeling tape TS is wound. The peeling roller 35 can be lifted and lowered to a position higher than the sheet placing table 20. That is, in the process in which the sealing sheet T is sucked and held by the sheet transport mechanism 21 and transported, the peeling roller 35 presses and sticks the peeling tape TS to the peeling liner S2 on the back surface of the sealing sheet T.
　テープ回収部３３は、剥離ローラ３５によって封止シートＴの裏面側の剥離ライナＳ２に貼り付けられた状態で剥離テープＴＳを巻き取ることにより、封止シートＴから剥離された剥離ライナＳ２とともに回収ボビンに剥離テープＴＳを巻き取り回収する。 The tape recovery unit 33 collects the release tape TS together with the release liner S2 peeled from the sealing sheet T by winding the release tape TS in a state of being attached to the release liner S2 on the back side of the sealing sheet T by the release roller 35. The release tape TS is wound around the bobbin and collected.
　カメラ３４は、裏面から第２剥離ライナＳ２の剥離された封止シートＴのハーフカットされた複数枚の封止シート片ＣＴの位置を撮像し、当該画像データを制御部１００に送信する。 The camera 34 images the positions of a plurality of half-cut sealing sheet pieces CT of the sealing sheet T peeled off from the second peeling liner S2 from the back surface, and transmits the image data to the control unit 100.
　第１保持テーブル２３は、図４および図５に示すように、半導体基板Ｗよりも大形のチャックテーブルで構成されている。第１保持テーブル２３は、縦軸周りに回転し、半導体基板Ｗのアライメントを行うよう構成されている。また、第１保持テーブル２３は、ガイドレール３８に沿って半導体基板Ｗの載置位置と装置奥側のアライメント位置とにわたって往復移動するように構成されている。 The first holding table 23 is composed of a chuck table that is larger than the semiconductor substrate W, as shown in FIGS. The first holding table 23 is configured to rotate around the vertical axis to align the semiconductor substrate W. Further, the first holding table 23 is configured to reciprocate along the guide rail 38 over the mounting position of the semiconductor substrate W and the alignment position on the back side of the apparatus.
　アライメント位置の上方には、２台のカメラ３９が配備されており、半導体基板Ｗの外形および分断ライン（スクライブライン）を撮像し、両画像データを制御部１００に送信する。 Two cameras 39 are provided above the alignment position, take an image of the outer shape and cutting line (scribe line) of the semiconductor substrate W, and transmit both image data to the control unit 100.
　基板搬送機構２４は、装置本体の横方向に伸びるフレーム４１に沿ってシート貼付け機構２５側まで達するガイドレールＲ３上を装置移動する可動台４２を備える。当該可動台４２に懸垂支持された縦フレームに沿って昇降可能な吸着プレート４４を備えている。吸着プレート４４は、半導体基板Ｗの形状以上の大きさを有する。すなわち、基板搬送機構２４は、第１保持テーブル２３から後述する貼付け工程の第２保持テーブル４５までを往復移動するよう構成されている。 The substrate transport mechanism 24 includes a movable base 42 that moves the apparatus on a guide rail R3 that reaches the sheet sticking mechanism 25 side along a frame 41 that extends in the lateral direction of the apparatus main body. A suction plate 44 that can be lifted and lowered along a vertical frame that is suspended and supported by the movable table 42 is provided. The suction plate 44 is larger than the shape of the semiconductor substrate W. In other words, the substrate transport mechanism 24 is configured to reciprocate from the first holding table 23 to the second holding table 45 in a pasting process described later.
　貼付け工程は、シート貼付け機構２５を備えている。当該シート貼付け機構２５は、第２保持テーブル４５およびチャンバ４６などから構成されている。 The pasting process includes a sheet pasting mechanism 25. The sheet sticking mechanism 25 includes a second holding table 45, a chamber 46, and the like.
　第２保持テーブル４５は、図７に示すように、チャンバ４６を構成する上下一対の上ハウジング４６Ａと下ハウジング４６Ｂのうち、下ハウジング４６Ｂに収納されている。 As shown in FIG. 7, the second holding table 45 is housed in the lower housing 46B of the upper and lower upper housings 46A and 46B constituting the chamber 46.
　また、下ハウジング４６Ｂは、ガイドレール４８に沿って、装置本体の前側の半導体基板Ｗの受け取り位置と上ハウジング４６Ａの下方の間を往復移動するよう構成されている。 Further, the lower housing 46B is configured to reciprocate between the receiving position of the semiconductor substrate W on the front side of the apparatus main body and below the upper housing 46A along the guide rail 48.
　チャンバ４６を構成する上ハウジング４６Ａには、昇降駆動機構５０に備えてられている。この昇降駆動機構５０は、縦壁５１の背部に縦向きに配置されたレール５２に沿って昇降可能な可動台５３、この可動台５３に高さ調節可能に支持された可動枠５４、この可動枠５４から前方に向けて延出されたアーム５５を備えている。このアーム５５の先端部から下方に延出する支軸５６に上ハウジング４６Ａが装着されている。 The upper housing 46 </ b> A constituting the chamber 46 is provided in the lift drive mechanism 50. The elevating drive mechanism 50 includes a movable base 53 that can be moved up and down along a rail 52 that is vertically arranged on the back of a vertical wall 51, a movable frame 54 that is supported on the movable base 53 so that the height can be adjusted, and the movable frame 53. An arm 55 extending forward from the frame 54 is provided. An upper housing 46A is mounted on a support shaft 56 that extends downward from the tip of the arm 55.
　可動台５３は、ネジ軸５７をモータ５８によって正逆転することでねじ送り昇降されるようになっている。また、上ハウジング４６Ａの内部には、昇降可能な押圧プレート５９が内装されている。当該押圧プレート５９には、ヒータ６０が埋設されている。 The movable base 53 is adapted to be screwed up and down by rotating the screw shaft 57 forward and backward by a motor 58. A push plate 59 that can be raised and lowered is housed inside the upper housing 46A. A heater 60 is embedded in the pressing plate 59.
　硬化処理工程は、図８に示すように、加熱装置６１を備えている。加熱装置６１は、例えば、半導体基板Ｗを載置保持する第３保持テーブル６２および昇降可能なヒータ６３を埋設した加熱プレート６４などから構成される。 The curing process includes a heating device 61 as shown in FIG. The heating device 61 includes, for example, a third holding table 62 for placing and holding the semiconductor substrate W and a heating plate 64 in which a heater 63 that can be raised and lowered is embedded.
　ダイシング工程は、ダイシングテープを介して接着保持された半導体基板Ｗを半導体装置に分断する切断装置を備えている。 The dicing process includes a cutting device that divides the semiconductor substrate W bonded and held via a dicing tape into semiconductor devices.
　次に、半導体装置を製造する一連の動作について詳述する。 Next, a series of operations for manufacturing a semiconductor device will be described in detail.
　切断工程において、裁断テーブル７に吸着保持された長尺の封止シートＴを、プロッタ切断ユニット１２によって、半導体基板に形成された複数個の半導体素子の分布領域の全体の面積よりも小さい面積で、かつ、複数個分の半導体素子を囲う分断ラインに合わせて封止シート片ＣＴにハーフカットする。複数枚の封止シート片ＣＴは、図１に示すように、互いに重なることなく半導体素子の分布領域の全体を覆うように予めレイアウトされている。すなわち、分断ライン幅の内側のラインのサイズ以下に合わせてハーフカットする。なお、ここで分布領域とは、半導体基板を個片化する予定の複数個の半導体素子が配置されており、図５の一点鎖線で示すように、その最外周部の切断予定ラインを含む領域ＤＡである In the cutting step, the long sealing sheet T adsorbed and held on the cutting table 7 is smaller than the entire area of the plurality of semiconductor element distribution regions formed on the semiconductor substrate by the plotter cutting unit 12. And half cut into sealing sheet piece CT according to the parting line which encloses several semiconductor elements. As shown in FIG. 1, the plurality of sealing sheet pieces CT are laid out in advance so as to cover the entire distribution region of the semiconductor elements without overlapping each other. That is, half-cutting is performed in accordance with the size of the line inside the dividing line width. Here, the distribution region is a region in which a plurality of semiconductor elements scheduled to be separated into semiconductor substrates are arranged, and as shown by a one-dot chain line in FIG. DA
　次に、第２切断機構９によって、封止シート片ＣＴの形成された封止シートＴを半導体基板Ｗの形状に切り抜く。裁断テーブル７の吸着を解除して半導体基板Ｗの形状となった枚葉の封止シートＴを貼付け工程のシート載置台２０に載置する。なお、円形に切り抜かれた長尺の封止シートＴは、シート回収部３に巻き取り回収される。 Next, the sealing sheet T on which the sealing sheet piece CT is formed is cut out into the shape of the semiconductor substrate W by the second cutting mechanism 9. The adsorption | suction of the cutting table 7 is cancelled | released, and the sheet | seat sealing sheet T used as the shape of the semiconductor substrate W is mounted in the sheet | seat mounting base 20 of an affixing process. The long sealing sheet T cut out in a circular shape is wound and collected by the sheet collecting unit 3.
　シート載置台２０に封止シートＴが載置されると、シート搬送機構２１によって吸着保持され、カメラ３４の上方に搬送される。このとき、図６に示すように、シート載置台２０から僅かに上昇し、水平搬送される過程で当該シート載置台２０から外れた搬送方向の前方の位置に剥離ローラ３５が上昇してくる。当該剥離ローラ３５に巻き回された剥離テープＴＳが、図９に示すように、封止シートＴの裏面側の第２剥離ライナＳ２に押圧される。その後、シート搬送機構２１の搬送速度と同調した速度で剥離テープＴＳを巻き取りながら、第２剥離ライナＳ２を封止シートＴから剥離する。剥離された第２剥離ライナＳ２は、剥離テープＴＳごと回収ボビンに巻き取り回収される。 When the sealing sheet T is placed on the sheet placing table 20, it is sucked and held by the sheet carrying mechanism 21 and carried above the camera 34. At this time, as shown in FIG. 6, the peeling roller 35 rises slightly from the sheet mounting table 20 to a position in the transport direction that is out of the sheet mounting table 20 in the process of horizontal transport. The release tape TS wound around the release roller 35 is pressed against the second release liner S2 on the back surface side of the sealing sheet T as shown in FIG. Thereafter, the second release liner S <b> 2 is peeled from the sealing sheet T while winding the release tape TS at a speed synchronized with the transport speed of the sheet transport mechanism 21. The peeled second peeling liner S2 is wound and collected on the collecting bobbin together with the peeling tape TS.
　カメラ３４の上方に封止シートＴが達すると、封止シートＴの外形および封止シートＴのレイアウト画像が撮像される。当該画像データが制御部１００に送信される。撮像処理が完了すると、シート搬送機構２１は、封止シートＴを吸着保持したまま、第１保持テーブル２３上へと移動する。 When the sealing sheet T reaches above the camera 34, the outer shape of the sealing sheet T and the layout image of the sealing sheet T are captured. The image data is transmitted to the control unit 100. When the imaging process is completed, the sheet conveying mechanism 21 moves onto the first holding table 23 while holding the sealing sheet T by suction.
　封止シートＴがシート載置台２０に載置されると略同時に、第１保持テーブル２３に半導体基板Ｗが載置される。半導体基板Ｗを吸着保持した第１保持テーブル２３は、アライメント位置に移動し、カメラ３９によって表面が撮像される。撮像された画像データは、制御部１００へと送信される。 When the sealing sheet T is placed on the sheet placement table 20, the semiconductor substrate W is placed on the first holding table 23 substantially simultaneously. The first holding table 23 holding the semiconductor substrate W by suction moves to the alignment position, and the surface of the first holding table 23 is imaged by the camera 39. The captured image data is transmitted to the control unit 100.
　撮像処理が完了すると、第１保持ステージ２３は、載置位置に戻る。ここで、制御部１００の画像解析処理により求めた封止シート片ＣＴのレイアウトの輪郭と半導体基板Ｗの半導体素子の分断ラインの内側のラインとが合致し、かつ、半導体素子の分布領域の全面を覆うように、半導体基板Ｗのアライメントを行う。第１保持テーブル２３を縦軸周りに回転させてアライメントを行う。 When the imaging process is completed, the first holding stage 23 returns to the placement position. Here, the outline of the layout of the sealing sheet piece CT obtained by the image analysis processing of the control unit 100 matches the line inside the dividing line of the semiconductor elements of the semiconductor substrate W, and the entire distribution area of the semiconductor elements The semiconductor substrate W is aligned so as to cover the substrate. Alignment is performed by rotating the first holding table 23 around the vertical axis.
　半導体基板Ｗのアライメントが完了すると、シート搬送機構２１によって搬送されてきた封止シートＴが、図１０に示すように、半導体基板Ｗに対向配置される。その後に、図１１に示すように、吸着プレート２６が所定高さまで下降する。このとき、封止シートＴが適度に押圧されて半導体基板Ｗに仮圧着される。封止シートＴの仮圧着が完了すると、シート搬送機構２１は、シート載置台２０側に戻る。 When the alignment of the semiconductor substrate W is completed, the sealing sheet T conveyed by the sheet conveyance mechanism 21 is disposed to face the semiconductor substrate W as shown in FIG. Thereafter, as shown in FIG. 11, the suction plate 26 is lowered to a predetermined height. At this time, the sealing sheet T is moderately pressed and temporarily bonded to the semiconductor substrate W. When the temporary pressure bonding of the sealing sheet T is completed, the sheet conveying mechanism 21 returns to the sheet mounting table 20 side.
　封止シートＴが仮圧着された半導体基板Ｗは、基板搬送機構２４によって吸着保持され、第２保持テーブル４５に搬送される。 The semiconductor substrate W to which the sealing sheet T has been temporarily press bonded is sucked and held by the substrate transfer mechanism 24 and transferred to the second holding table 45.
　半導体基板Ｗが第２保持テーブル４５に載置されると、基板搬送機構２４は上昇して第１保持テーブル２３側に戻る。第２保持テーブル４５は、半導体基板Ｗを吸着保持したまま、上ハウジング４６Ａの下方まで移動する。 When the semiconductor substrate W is placed on the second holding table 45, the substrate transport mechanism 24 rises and returns to the first holding table 23 side. The second holding table 45 moves to below the upper housing 46A while holding the semiconductor substrate W by suction.
　図１２および図１３に示すように、上ハウジング４６Ａの下端が下ハウジング４６Ｂに当接する位置まで下降する。つまり、チャンバ４６を形成する。その後、チャンバ４６内を減圧する。さらに、押圧プレート５９を下降させて封止シートＴを押圧および加熱して半導体基板Ｗに本圧着する。この時点で、封止層Ｍは、完全に硬化していない状態である。 12 and 13, the lower end of the upper housing 46A is lowered to a position where it abuts against the lower housing 46B. That is, the chamber 46 is formed. Thereafter, the pressure in the chamber 46 is reduced. Further, the pressing plate 59 is lowered, the sealing sheet T is pressed and heated, and finally pressed onto the semiconductor substrate W. At this point, the sealing layer M is not completely cured.
　本圧着が完了すると、チャンバ４６内を大気圧まで戻して上ハウジング４６Ａを開放する。下ハウジング４６Ｂは、第２保持テーブル４５ごと基板の受け渡し位置まで戻る。図１４に示す封止シートＴの本圧着された半導体基板Ｗは、不要な封止層Ｍと剥離ライナが剥離され、硬化処理部に搬送される。 When the main pressure bonding is completed, the inside of the chamber 46 is returned to atmospheric pressure, and the upper housing 46A is opened. The lower housing 46B returns to the substrate transfer position together with the second holding table 45. The semiconductor substrate W to which the sealing sheet T shown in FIG. 14 is finally bonded is peeled off from the unnecessary sealing layer M and the release liner, and is conveyed to the curing processing unit.
　第３保持テーブル６２に載置された半導体基板Ｗに加熱プレート６４を当接させて加熱し、封止層Ｍを加熱硬化させる。すなわち、所定温度まで上昇させた後、ガラス転移点まで冷却して封止層Ｍを完全に硬化させる。 The heating plate 64 is brought into contact with the semiconductor substrate W placed on the third holding table 62 and heated to heat and cure the sealing layer M. That is, after raising to a predetermined temperature, the sealing layer M is completely cured by cooling to the glass transition point.
　その後、図１５に示すように、リングフレームｆを介してダイシングテープＤＴに半導体基板Ｗを接着保持する。この状態でダイシング工程に搬送され、分断ラインに沿って半導体基板Ｗをカッタによって分断する。分断処理が完了すると、図１６に示すように、基板保持テーブル８５のみを僅かに上昇させてダイシングテープを裏面側から突き上げてエキスパンドし、半導体装置ＣＰごとに完全分離する。以上で一連の処理が完了し、同じ処理が繰り返される。 Thereafter, as shown in FIG. 15, the semiconductor substrate W is bonded and held on the dicing tape DT via the ring frame f. In this state, the semiconductor substrate W is conveyed to a dicing process, and the semiconductor substrate W is cut by a cutter along a cutting line. When the dividing process is completed, as shown in FIG. 16, only the substrate holding table 85 is slightly raised and the dicing tape is pushed up from the back surface side to be expanded and completely separated for each semiconductor device CP. Thus, a series of processing is completed, and the same processing is repeated.
　上述のように、半導体素子が形成された分布領域の全体の面積よりも小さい面積に切断した複数枚の封止シート片ＣＴに分けて当該半導体素子の分布領域の全面に貼り付けるので、半導体基板Ｗの反りを抑制することができる。つまり、半導体基板と同じ形状の１枚の封止シートＴを半導体基板Ｗに貼り付けた場合、封止シートＴは、半導体基板Ｗの中心の一方向に向かって収縮する。しかしながら、複数枚の封止シート片ＣＴを半導体基板Ｗに分割して貼り付けた場合、収縮方向が分散され、半導体基板Ｗの反りが抑制される。 As described above, the semiconductor substrate is divided into a plurality of sealing sheet pieces CT cut into an area smaller than the entire area of the distribution region in which the semiconductor element is formed, and is attached to the entire surface of the distribution region of the semiconductor element. W warpage can be suppressed. That is, when one sealing sheet T having the same shape as the semiconductor substrate is attached to the semiconductor substrate W, the sealing sheet T contracts toward one direction of the center of the semiconductor substrate W. However, when the plurality of sealing sheet pieces CT are divided and attached to the semiconductor substrate W, the shrinkage direction is dispersed and warping of the semiconductor substrate W is suppressed.
　また、封止シート片ＣＴは、半導体基板Ｗよりもサイズが小さいので、貼付け時の取り扱いが容易である。すなわち、半導体基板Ｗと封止シート片ＣＴの接着界面への気泡の巻き込みを抑制することができる。したがって、封止層内でのボイドの発生を抑制することができる。 Moreover, since the sealing sheet piece CT is smaller in size than the semiconductor substrate W, it is easy to handle at the time of pasting. That is, entrainment of bubbles at the adhesion interface between the semiconductor substrate W and the sealing sheet piece CT can be suppressed. Accordingly, generation of voids in the sealing layer can be suppressed.
　なお、本発明は以下のような形態で実施することもできる。 The present invention can also be implemented in the following forms.
　（１）上記実施例において、枚葉の封止シートＴは、半導体基板Ｗの形状に限定されるものではない。例えば、図１７に示すように、半導体基板Ｗよりも大形の矩形に切断された枚葉の封止シートＴに封止シート片ＣＴをハーフカットして形成したものを利用してもよい。 (1) In the above embodiment, the single-sheet sealing sheet T is not limited to the shape of the semiconductor substrate W. For example, as shown in FIG. 17, a sheet formed by half-cutting a sealing sheet piece CT on a single-sheet sealing sheet T cut into a larger rectangle than the semiconductor substrate W may be used.
　この場合、シート貼付け工程では、封止シートＴに張力を付与した状態で半導体基板Ｗに貼り付けることが好ましい。 In this case, in the sheet attaching step, it is preferable to attach the sealing sheet T to the semiconductor substrate W in a state where tension is applied.
　例えば、図１８に示す貼付け治具７０に封止シートＴを装着して取り扱う。貼付け治具７０は、矩形のフレーム枠７１の両端にクランプ板７２がコイルバネ７３によって受け板７４を押圧する方向に付勢されている。また、逆Ｌ字状の受け板７４の一方の下部寄りにフレーム枠７１に固定された固定ブロック７５を貫通するボール軸７６の先端が当接されている。当該ボール軸７６と固定ブロック７５の間のコイルバネ７７によって、受け板７４が外向きにバネ付勢されている。また、当該ボール軸７６の他端側にはナット７８が螺合されている。当該ナット７８を正逆転することにより、ボール軸７６の突き出し距離が変化し、クランプ板７２と受け板７４の外向きの付勢力が調整可能に構成されている。 For example, the sealing sheet T is attached to the sticking jig 70 shown in FIG. The affixing jig 70 is biased in the direction in which the clamp plate 72 presses the receiving plate 74 by the coil spring 73 at both ends of the rectangular frame 71. Further, a tip of a ball shaft 76 penetrating a fixed block 75 fixed to the frame frame 71 is brought into contact with one lower portion of the inverted L-shaped receiving plate 74. The receiving plate 74 is biased outward by a coil spring 77 between the ball shaft 76 and the fixed block 75. A nut 78 is screwed to the other end side of the ball shaft 76. By rotating the nut 78 forward and backward, the protruding distance of the ball shaft 76 changes, and the outward biasing force of the clamp plate 72 and the receiving plate 74 can be adjusted.
　次に、当該貼付け治具７０を利用して、封止シートＴを半導体基板Ｗに本圧着する一巡の動作について説明する。 Next, a description will be given of a round of operation of performing the main pressure bonding of the sealing sheet T to the semiconductor substrate W using the sticking jig 70.
　図１９に示すように、バネ付勢に抗してクランプ板７２を開放し、封止シートＴをフレーム枠７１に載置する。その後に、図２０および図２１に示すように、クランプ板７２によって封止シートの両端をクランプする。 As shown in FIG. 19, the clamp plate 72 is opened against the spring bias, and the sealing sheet T is placed on the frame frame 71. Thereafter, as shown in FIGS. 20 and 21, both ends of the sealing sheet are clamped by the clamp plate 72.
　アライメント処理の済んだ第１保持テーブル２３上の半導体基板Ｗと貼付け治具７０を対向させ、図２２に示すように、貼付け治具７０を所定高さまで下降させる。このとき、図２３に示すように、第２保持テーブル４５に立設された位置決めピンＰが、貼付け治具７０の位置決め孔７９に係合し、位置合わせされる。この状態で、封止シートＴに所定荷重をかけて半導体基板Ｗに仮圧着する。 The semiconductor substrate W on the first holding table 23 that has undergone the alignment process and the attaching jig 70 are opposed to each other, and the attaching jig 70 is lowered to a predetermined height as shown in FIG. At this time, as shown in FIG. 23, the positioning pins P erected on the second holding table 45 engage with the positioning holes 79 of the attaching jig 70 and are aligned. In this state, a predetermined load is applied to the sealing sheet T and temporarily bonded to the semiconductor substrate W.
　図２４に示すように、吸着プレート４４から吸着パッド８０に変更した基板搬送機構２４によって、貼付け治具７０を吸着し、第２保持テーブル４５に搬送および載置する。このとき、第１保持テーブル２３に貼付け治具７０をセットしたとき同じように、貼付け治具７０のフレーム枠７１に形成された位置決め孔７９に第２保持テーブル４５に形成された位置決めピンＰが係合し、位置合わせされる。 24, the sticking jig 70 is sucked by the substrate transport mechanism 24 changed from the suction plate 44 to the suction pad 80, and transported and placed on the second holding table 45. At this time, the positioning pins P formed on the second holding table 45 are inserted into the positioning holes 79 formed in the frame frame 71 of the attaching jig 70 in the same manner as when the attaching jig 70 is set on the first holding table 23. Engage and align.
　第２保持テーブル４５を収納している下ハウジング４６Ｂを上ハウジング４６Ａの下方まで移動させ、図２５に示すように、チャンバ４６を形成する。チャンバ４６内を減圧するとともに、押圧プレート５９で加熱しながら封止シートＴを半導体基板Ｗに本圧着する。 The lower housing 46B housing the second holding table 45 is moved to a position below the upper housing 46A to form a chamber 46 as shown in FIG. While reducing the pressure inside the chamber 46, the sealing sheet T is finally bonded to the semiconductor substrate W while being heated by the pressing plate 59.
　本圧着が完了すると、第２保持テーブル４５を基板の受け渡し位置に移動させ、所定時時間冷却する。その後、図２６に示すように、基板搬送機構２４によって貼付け治具７０を吸着して上昇させることにより、接着力の低下している不要な封止層Ｍが第１剥離ライナＳ１側に残って半導体基板Ｗから剥離される。 When the main press bonding is completed, the second holding table 45 is moved to the delivery position of the substrate and cooled for a predetermined time. Thereafter, as shown in FIG. 26, the adhering jig 70 is adsorbed and raised by the substrate transport mechanism 24, so that an unnecessary sealing layer M having reduced adhesive strength remains on the first peeling liner S1 side. It is peeled from the semiconductor substrate W.
　封止シート片ＣＴの形状に封止層Ｍが本圧着された半導体基板Ｗは、上記実施例と同様に硬化処理工程およびダイシング工程を経て半導体装置に分断される。 The semiconductor substrate W to which the sealing layer M is finally bonded in the shape of the sealing sheet piece CT is divided into semiconductor devices through a curing process and a dicing process in the same manner as in the above-described embodiment.
　この方法によれば、半導体基板Ｗの外形からはみ出る部位を貼付け治具７０によってクランプすることにより、封止シートＴに適度な張力を付与した状態で半導体基板Ｗに封止シートＴを貼り付けることができる。すなわち、封止シートＴは貼付時に弛んでいないので、半導体基板Ｗとの接着界面に気泡が巻き込んだり、或いは、皺が発生したりするのを抑制することができる。 According to this method, the sealing sheet T is attached to the semiconductor substrate W in a state where an appropriate tension is applied to the sealing sheet T by clamping the portion protruding from the outer shape of the semiconductor substrate W by the attaching jig 70. Can do. That is, since the sealing sheet T is not loosened at the time of sticking, it is possible to suppress the occurrence of bubbles or the generation of wrinkles at the adhesive interface with the semiconductor substrate W.
　（２）上記実施例において、長尺の封止シートＴから所定形状に切り抜いた封止シート片ＣＴから裏面側の第２剥離ライナＳ２を剥離し、半導体基板Ｗの所定位置に順番に貼り付けるようにしてもよい。または、半導体基板の形状または半導体基板よりも大形に切断した剥離ライナに、予め所定形状に切断した封止シート片ＣＴを決められたレイアウトで仮接着した封止シートを利用してもよい。 (2) In the above-described embodiment, the second release liner S2 on the back surface side is peeled off from the sealing sheet piece CT cut out in a predetermined shape from the long sealing sheet T, and is sequentially attached to a predetermined position of the semiconductor substrate W. You may do it. Alternatively, a sealing sheet in which a sealing sheet piece CT cut in advance in a predetermined shape is temporarily bonded to a release liner cut in a shape of a semiconductor substrate or larger than the semiconductor substrate in a predetermined layout may be used.
　半導体基板Ｗと同じ形状の剥離ライナに封止シート片ＣＴを仮接着した場合、裏面から第２剥離ライナＳ２を剥離して半導体基板Ｗとの位置合わせを行った後に、半導体基板Ｗに仮圧着をすればよい。その後の処理工程は、上記主たる実施例と同じ処理を行う。 When the sealing sheet piece CT is temporarily bonded to the release liner having the same shape as the semiconductor substrate W, the second release liner S2 is peeled from the back surface and aligned with the semiconductor substrate W, and then temporarily bonded to the semiconductor substrate W. Just do it. Subsequent processing steps are the same as those in the main embodiment.
　また、半導体基板Ｗより大形の剥離ライナに封止シート片ＣＴを仮接着した場合、貼付け治具７０に剥離ライナの両端をクランプして適度の張力を付与する。その状態で封止シート片ＣＴの裏面から第２剥離ライナＳ２を剥離し、半導体基板Ｗとの位置合わせを行って仮圧着する。その後は、上記変形例と同じ処理を行う。 In addition, when the sealing sheet piece CT is temporarily bonded to a release liner that is larger than the semiconductor substrate W, both ends of the release liner are clamped to the affixing jig 70 to apply an appropriate tension. In this state, the second release liner S2 is peeled off from the back surface of the sealing sheet piece CT, aligned with the semiconductor substrate W, and temporarily bonded. Thereafter, the same processing as in the above modification is performed.
　これらの実施形態によれば、特性の異なる封止シート片ＣＴを半導体基板Ｗに貼り付けることができる。例えば、封止層Ｍの収縮率の異なる封止シート片ＣＴを利用し、半導体基板Ｗの反りの発生しやすい領域と発生しにくい領域で使い分ける。例えば、反りの発生し易い部分に他の部分に貼り付ける封止シート片ＣＴの封止層Ｍよりも収縮率の小さい封止層Ｍの形成された封止シート片ＣＴを貼り付ける。この方法によれば、半導体基板Ｗの反り量を調整することができる。 According to these embodiments, the sealing sheet pieces CT having different characteristics can be attached to the semiconductor substrate W. For example, by using sealing sheet pieces CT having different shrinkage rates of the sealing layer M, the semiconductor substrate W is selectively used in a region where warpage is likely to occur and a region where it is difficult to occur. For example, the sealing sheet piece CT in which the sealing layer M having a smaller shrinkage rate than the sealing layer M of the sealing sheet piece CT to be attached to another part is attached to a part where warpage is likely to occur. According to this method, the warpage amount of the semiconductor substrate W can be adjusted.
　（３）上記各実施例において、封止シートＴを第１切断機構８および第２切断機構９によって封止シート片ＣＴと枚葉の封止シートＴの切断を使い分けていたが、予め半導体基板Ｗおよび封止シート片ＣＴのレイアウトのかたどったトムソン刃で打ち抜きまたはハーフカットするよう構成してもよい。 (3) In each of the above embodiments, the sealing sheet T is selectively used for cutting the sealing sheet piece CT and the single-sheet sealing sheet T by the first cutting mechanism 8 and the second cutting mechanism 9. You may comprise so that it may punch or half-cut with the Thomson blade which shaped the layout of W and sealing sheet piece CT.
　（４）上記各実施例において、シート貼付け工程で封止層の硬化処理までを行ってもよい。 (4) In each of the above embodiments, the sealing layer may be hardened in the sheet attaching step.
　（５）上記各実施例において、半導体基板Ｗの形状は、円形に限定されない。したがって、半導体基板Ｗは、正方形または長方形などの四角形であってもよい。 (5) In each of the above embodiments, the shape of the semiconductor substrate W is not limited to a circle. Therefore, the semiconductor substrate W may be a quadrangle such as a square or a rectangle.
　（６）上記実施例において、枚葉の半導体基板と同じ形状の封止シートＴは、当該半導体基板より大きいサイズであってもよいし、分布領域の外から半導体基板の外周までに収まる当該半導体基板よりも小さいサイズであってもよい。 (6) In the above embodiment, the sealing sheet T having the same shape as the single-wafer semiconductor substrate may be larger in size than the semiconductor substrate, or the semiconductor fits from the outside of the distribution region to the outer periphery of the semiconductor substrate. The size may be smaller than the substrate.
　以上のように、本発明は、半導体装置の生産速度を向上させつつも、半導体装置を精度よく製造するのに適している。 As described above, the present invention is suitable for accurately manufacturing a semiconductor device while improving the production speed of the semiconductor device.

Claims (12)

  1. 　剥離ライナに樹脂組成物からなる封止層の形成された封止シートを半導体素子に貼り付けて半導体装置を製造する半導体装置の製造方法であって、
    　半導体基板に形成された複数個の前記半導体素子の分布領域に当該分布領域の面積よりも小さい面積で、かつ、複数個の半導体素子を囲う分断ラインに合わせて切断した複数枚の封止シート片を当該半導体素子の分布領域の全面に貼り付ける貼付け過程と、
    　前記封止層を硬化させる硬化過程と、
    　硬化した前記封止層によって半導体素子が封止された半導体基板を分断する分断過程と、
    　を備えたことを特徴とする半導体装置の製造方法。     A semiconductor device manufacturing method for manufacturing a semiconductor device by attaching a sealing sheet on which a sealing layer made of a resin composition is formed on a release liner to a semiconductor element,
    A plurality of sealing sheet pieces cut in accordance with a dividing line surrounding the plurality of semiconductor elements in a distribution area of the plurality of semiconductor elements formed on the semiconductor substrate and having an area smaller than the area of the distribution area. Pasting process to paste the entire surface of the distribution area of the semiconductor element,
    A curing process for curing the sealing layer;
    A dividing process of dividing the semiconductor substrate in which the semiconductor element is sealed by the cured sealing layer;
    A method for manufacturing a semiconductor device, comprising:
  2. 　請求項１に記載の半導体装置の製造方法において、
    　前記貼付け過程は、半導体基板の形状以上の大きさを有する枚葉の封止シートにハーフカットされた複数枚の封止シート片を半導体基板に貼り付け、
    　前記剥離ライナおよび封止シート片周囲の切り抜かれた封止シートを半導体基板から剥離する
    　ことを特徴とする半導体装置の製造方法。     In the manufacturing method of the semiconductor device according to claim 1,
    In the pasting process, a plurality of sealing sheet pieces that are half-cut into a single-sheet sealing sheet having a size equal to or larger than the shape of the semiconductor substrate are pasted to the semiconductor substrate,
    A method of manufacturing a semiconductor device, comprising: peeling the sealing sheet cut out around the release liner and the sealing sheet piece from a semiconductor substrate.
  3. 　請求項２に記載の半導体装置の製造方法において、
    　前記枚葉の封止シートは、半導体基板と同じ形状である
    　ことを特徴とする半導体装置の製造方法。     In the manufacturing method of the semiconductor device according to claim 2,
    The method for manufacturing a semiconductor device, wherein the single-sheet sealing sheet has the same shape as a semiconductor substrate.
  4. 　請求項２に記載の半導体装置の製造方法において、
    　前記枚葉の封止シートは、半導体基板よりも大きいサイズである
    　ことを特徴とする半導体装置の製造方法。     In the manufacturing method of the semiconductor device according to claim 2,
    The method for manufacturing a semiconductor device, wherein the single-sheet sealing sheet is larger in size than a semiconductor substrate.
  5. 　請求項４に記載の半導体装置の製造方法において、
    　前記貼付け過程は、枚葉の封止シートに張力を付与しながら複数枚の封止シートを半導体基板に貼り付ける
    　ことを特徴とする半導体装置の製造方法。     In the manufacturing method of the semiconductor device according to claim 4,
    The said affixing process affixes several sealing sheets on a semiconductor substrate, providing a tension | tensile_strength to the sealing sheet of a sheet | seat. The manufacturing method of the semiconductor device characterized by the above-mentioned.
  6. 　請求項１に記載の半導体装置の製造方法において、
    　前記貼付け過程は、半導体基板の形状以上の大きさを有する枚葉の剥離ライナに複数枚の封止シート片を仮接着し、
    　枚葉の前記剥離ライナを介して前記半導体基板に複数枚の封止シート片を貼り付け、
    　前記分断過程の前に、枚葉の前記剥離ライナを封止シート片から剥離する
    　ことを特徴とする半導体装置の製造方法。     In the manufacturing method of the semiconductor device according to claim 1,
    In the pasting process, a plurality of sealing sheet pieces are temporarily bonded to a single wafer release liner having a size equal to or larger than the shape of the semiconductor substrate,
    Affixing a plurality of sealing sheet pieces to the semiconductor substrate through the release liner of the sheet,
    The method for manufacturing a semiconductor device, wherein the release liner of a single wafer is peeled off from a sealing sheet piece before the dividing step.
  7. 　請求項６に記載の半導体装置の製造方法において、
    　前記枚葉の剥離ライナは、半導体基板と同じ形状である
    　ことを特徴とする半導体装置の製造方法。     In the manufacturing method of the semiconductor device according to claim 6,
    The method for manufacturing a semiconductor device, wherein the single wafer release liner has the same shape as a semiconductor substrate.
  8. 　請求項６に記載の半導体装置の製造方法において、
    　前記枚葉の剥離ライナは、半導体基板よりも大きいサイズである
    　ことを特徴とする半導体装置の製造方法。     In the manufacturing method of the semiconductor device according to claim 6,
    The method for manufacturing a semiconductor device, wherein the single wafer release liner is larger in size than a semiconductor substrate.
  9. 　請求項８に記載の半導体装置の製造方法において、
    　前記貼付け過程は、枚葉の剥離ライナに張力を付与しながら複数枚の封止シート片を半導体基板に貼り付ける
    　ことを特徴とする半導体装置の製造方法。     In the manufacturing method of the semiconductor device according to claim 8,
    The said affixing process affixes several sealing sheet piece on a semiconductor substrate, providing tension | tensile_strength to the peeling liner of a sheet | seat. The manufacturing method of the semiconductor device characterized by the above-mentioned.
  10. 　請求項６に記載の半導体装置の製造方法において、
    　前記貼付け過程は、半導体基板の領域に応じて異なる特性の封止シート片を貼り付ける
    　ことを特徴とする半導体装置の製造方法。     In the manufacturing method of the semiconductor device according to claim 6,
    The said affixing process affixes the sealing sheet piece of a different characteristic according to the area | region of a semiconductor substrate. The manufacturing method of the semiconductor device characterized by the above-mentioned.
  11. 　請求項１に記載の半導体装置の製造方法において、
    　前記貼付け過程は、半導体素子の分布領域に応じて異なるサイズおよび形状の封止シート片を貼り付ける
    　ことを特徴とする半導体装置の製造方法。     In the manufacturing method of the semiconductor device according to claim 1,
    The said affixing process affixes the sealing sheet piece of a different size and shape according to the distribution area | region of a semiconductor element. The manufacturing method of the semiconductor device characterized by the above-mentioned.
  12. 　請求項１に記載の半導体装置の製造方法において、
    　前記貼付け過程は、減圧雰囲気で半導体基板に封止シート片を貼り付ける
    　ことを特徴とする半導体装置の製造方法。     In the manufacturing method of the semiconductor device according to claim 1,
    The said affixing process affixes a sealing sheet piece on a semiconductor substrate in a pressure-reduced atmosphere. The manufacturing method of the semiconductor device characterized by the above-mentioned.
PCT/JP2014/057175 2013-04-08 2014-03-17 Manufacturing method for semiconductor device WO2014167947A1 (en)

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