WO2014166310A1 - 一种提高垂直发光二极管芯片亮度的封装结构 - Google Patents

一种提高垂直发光二极管芯片亮度的封装结构 Download PDF

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WO2014166310A1
WO2014166310A1 PCT/CN2014/071041 CN2014071041W WO2014166310A1 WO 2014166310 A1 WO2014166310 A1 WO 2014166310A1 CN 2014071041 W CN2014071041 W CN 2014071041W WO 2014166310 A1 WO2014166310 A1 WO 2014166310A1
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light
chip
package structure
substrate
led
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French (fr)
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赵志伟
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Priority to US14/742,538 priority Critical patent/US9306138B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • the invention relates to a package structure for improving the brightness of a vertical light-emitting diode chip.
  • the design of the bracket avoids light loss caused by contact of the light-absorbing substrate and improves the brightness of the vertical chip package, and belongs to the field of light-emitting diodes.
  • the LED chips can be roughly divided into three categories, namely, a light-emitting diode chip, a flip-chip LED chip and a vertical LED chip.
  • the most widely used application-side LED chips are advantageous in that the production cost is low and the yield is high. Therefore, the current use of LED chips is more popular, but recently, with the rise of smart phones, the flash parts used in smart phones.
  • high-power LEDs are not available for high-power LED chips.
  • the development of vertical LED chips has been developed. The vertical electrode design allows vertical LED chips to withstand large power usage. Generally, it can be used. The power is about the size of the LED chip 1.5 times, but due to the design of the vertical electrode, the vertical light-emitting diode chip must also use a conductive substrate. Under the consideration of cost performance, the silicon substrate becomes an ideal choice.
  • the traditional silicon substrate LED vertical chip package structure is provided by the light-emitting diode chip after the blue light and the blue light enters the phosphor to excite the yellow light, and the blue light and the yellow light are mixed to generate white light, and the blue light enters the fluorescent light.
  • the phosphor particles only absorb part of the blue light, and the remaining blue light is refracted into the next phosphor particle, so in a series of light mixing processes, the blue light is continuously refracted to change the path of the light, even Some blue light will be reflected back to the chip.
  • the silicon substrate absorbs all the light in the visible range, especially for the blue and yellow light in the visible range, the vertical light-emitting diode is used for the illumination system. For example, after being sealed into LED lamp beads, the efficiency of blue light conversion white light will be deteriorated, and the brightness thereof will decrease.
  • the technical solution of the present invention is a package structure for brightness of a novel high-efficiency vertical light-emitting diode chip, which comprises at least a bracket system, a plastic cup and a peripheral connection of the bracket system, and a light-absorbing substrate.
  • the LED chip is placed on the bracket system and the encapsulant is distributed on the periphery of the silicon substrate LED chip, and is characterized in that a bubble structure is formed at the interface between the side of the substrate and the encapsulant.
  • the invention provides a package structure for improving the brightness of a vertical light emitting diode chip, which comprises a bracket system, mainly for carrying a light absorption substrate LED Vertical chip, the bracket system can use metal bracket, its function is for electrode conduction and heat dissipation, the bubble structure is formed at the interface between the side of the substrate and the package glue, and the reflective layer is formed by the difference in refractive index between the encapsulant, the bubble and the light absorbing substrate material.
  • the light reflected by the LED chip is absorbed by the substrate and reflected out of the package structure; the plastic cup is connected to the periphery of the bracket system, and the shape of the plastic cup can be adjusted according to the need of controlling the light shape;
  • the chip can be placed on the support system by means of solid crystal or the like; the encapsulant can be distributed on the periphery of the LED chip by coating or the like.
  • a non-hydrophilic material is plated between the bubble structure and the side surface of the light absorption substrate.
  • the light absorbing substrate has a vertical side surface.
  • the light absorbing substrate has a proximity to the substrate LED A side of the chip that is inclined at an angle to the horizontal plane and narrows from the top to the bottom.
  • the light absorbing substrate has an LED adjacent to the light absorbing substrate a first side of the chip at an oblique angle to the horizontal plane and narrowing from the top to the bottom and a second side perpendicular to the horizontal plane on a side remote from the light-emitting substrate LED chip.
  • the angle of the inclination angle is not less than 5 ° and not more than 85 °.
  • the light absorbing substrate may be a silicon substrate or a gallium arsenide substrate or the like.
  • the beneficial effects of the present invention are: forming a reflective layer by forming a bubble structure at a side of the light-absorbing substrate in the package structure and the interface of the package adhesive, and utilizing a refractive index difference between the encapsulant, the bubble, and the silicon substrate material, whereby effectively reducing or avoiding the light that would otherwise be absorbed by the substrate, and reflecting it out, enhancing the probability of light emission, thereby increasing the light intensity of the vertical light-emitting diode chip.
  • the package structure provided by the present invention is suitable for use in a lighting system, and is particularly suitable for packaging into LED lamp beads.
  • Figure 1 shows a conventional silicon substrate LED vertical chip package structure.
  • FIG. 2 is a schematic cross-sectional view showing a vertical chip package structure of a light-absorbing substrate LED according to a preferred embodiment of the present invention.
  • FIG 3 is a cross-sectional view showing a vertical chip package structure of a light-absorbing substrate LED according to another preferred embodiment of the present invention.
  • FIG. 4 is a cross-sectional view showing a vertical chip package structure of a light-absorbing substrate LED according to still another preferred embodiment of the present invention.
  • a package structure for improving the brightness of a vertical LED chip of the embodiment includes a bracket system for carrying a silicon substrate.
  • LED vertical chip 3 the bracket system can use metal bracket 1 , its function is for electrode conduction and heat dissipation; plastic cup 2 Connected to the periphery of the bracket system, the shape of the plastic cup can be adjusted according to the needs of the control light shape; the silicon substrate LED chip 3 can be placed on the support system by means of solid crystal or the like; the package adhesive containing yellow YAG 5 The coating is uniformly distributed on the periphery of the silicon substrate LED chip 3; the side surface of the silicon substrate 4 having the vertical side forms a bubble structure at the interface of the encapsulant 5 .
  • the bubble structure is passed through the silicon substrate 4
  • the vertical side is plated with a non-hydrophilic material so that the sides are not easily formed in close contact with the encapsulant.
  • the package structure using the difference in refractive index between the encapsulant, the bubble, and the silicon substrate material, acting as a reflective layer, reducing or avoiding the LED
  • the light reflected by the chip 3 is absorbed by the silicon substrate 4, and the light is reflected out of the package structure, thereby improving the light intensity of the vertical light-emitting diode chip.
  • the package structure is suitable for use in a lighting system, and is particularly suitable for packaging into LEDs. Lamp beads.
  • the silicon substrate 4 has a side on the side close to the LED chip that is inclined at an angle to the horizontal plane and narrows from top to bottom.
  • the angle of inclination ⁇ is in the range of not less than 5 ° and not more than 85 °, and in this embodiment, the inclination angle ⁇ is selected as 60. °.
  • the side surface of the silicon substrate 4 is inclined from the top to the bottom, it is easier to be on the silicon substrate 4
  • the side of the package and the encapsulant 5 form a bubble structure 8 .
  • the absorption absorbs light out of the package structure, thereby increasing the light intensity of the vertical LED chip.
  • the package structure is suitable for use in lighting systems, and is particularly suitable for packaging into LED lamp beads.
  • FIG. 4 unlike the first embodiment, another package structure for improving the brightness of the vertical LED chip, the silicon substrate, of the embodiment 4 having a first side adjacent to the LED chip at an oblique angle to the horizontal plane and narrowing from top to bottom and a second side perpendicular to the horizontal plane on a side remote from the LED chip.
  • the angle of inclination angle ⁇ is not less than 5 °, not more than 85 °, in the present embodiment, the inclination angle ⁇ is selected to be 45 °.
  • the side surface of the silicon substrate 4 is roughly divided into two segments, that is, having a proximity LED a first side of the chip that is inclined at an oblique angle to the horizontal plane and narrows from the top to the bottom and a second side that is perpendicular to the horizontal plane on a side away from the LED chip, such that the side of the silicon substrate 4 is With encapsulant 5 It is easier to form a bubble structure at the interface 8 .
  • the refractive index difference between the encapsulant, the bubble and the silicon substrate material is utilized to reduce or block the light reflected by the LED chip 3 from being irradiated to the silicon substrate 4 After absorption, the light is reflected out of the package structure, thereby achieving more light extraction, and the light extraction path is shown in FIG.
  • the package structure is suitable for use in lighting systems and is particularly suitable for packaging into LED lamp beads.

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Abstract

一种垂直发光二极管芯片亮度的封装结构，至少包括一支架系统（1）、一胶杯（2）与支架系统（1）之外围相连接、一含有吸光基板（4）LED芯片（3）置于支架系统（1）之上及封装胶（5）分布于硅基板LED芯片（3）之外围，其特征在于：吸光基板（4）的侧面与封装胶（5）接口处形成气泡结构（8）。利用封装胶（5）、气泡（8）以及硅基板材料折射率差异，形成反射层，从而有效地减少或避免原本会被基板所吸收的光线，并将其反射出封装结构，增强出光几率，进而提升垂直发光二级管芯片的光强。

Description

一种提高垂直发光二极管芯片亮度的封装结构
本申请主张如下优先权：中国发明专利申请号201310119249.X，题为 ' 一种提高垂直发光二极管芯片亮度的封装结构 ' ，于 2013 年 4 月 8 日提交。上述申请的全部内容通过引用结合在本申请中。
技术领域
本发明涉及一种提高垂直发光二极管芯片亮度的封装结构，通过支架的设计避免吸光基板接触而造成光损失，提升垂直芯片封装亮度，属于发光二极管领域。
背景技术
发光二极管芯片按结构分，大致可以分为三大类，分别为正装发光二极管芯片、倒装发光二极管芯片以及垂直发光二极管芯片。目前，应用端应用最多的为正装发光二极管芯片，其优势为制作成本较低良率高，所以目前正装发光二极管芯片使用较普及，但近来随着智能型手机崛起，智能型手机使用的闪光灯部分一般为高功率发光二极管的灯珠，其所需求的高功率正装芯片已经无法满足，开发垂直发光二极管芯片应运而生，垂直电极设计使得垂直发光二极管芯片可以承受较大的功率使用，一般可使用的功率约为正装发光二极管芯片的 1.5 倍，但由于垂直电极的设计，所以垂直发光二极体芯片也须采用导电基板，在性价比的考虑下，硅基板成为较为理想的选择。
传统的硅基板 LED 垂直芯片封装结构，如图 1 所示，由发光二级管芯片提供蓝光后与蓝光进入荧光粉后激发出黄光，利用蓝光与黄光混合后产生白光，在蓝光进入荧光粉颗粒的过程中荧光粉颗粒只会吸收部分蓝光，而剩余的蓝光会被折射进入下一颗荧光粉颗粒，所以在一系列混光的过程中蓝光会不断的被折射改变光的路径，甚至有些蓝光会被反射回芯片，由于硅基板会对所有可见光范围内的光进行吸收，特别是对于在可见光范围内的蓝光与黄光有一定的吸收率，所以当垂直发光二极管封用于照明系统，比如封成 LED 灯珠后，会造成蓝光转换白光效率变差，其亮度会下降。
发明内容
本发明的目的是提供一种提高垂直发光二极管芯片亮度的封装结构，通过改进封装结构的内部设计来提升垂直发光二极管的亮度。
为实现以上目的，本发明的技术方案是一种新型高效垂直发光二极管芯片亮度的封装结构，至少包括一支架系统、一胶杯与支架系统之外围相连接、一吸光基板 LED 芯片置于支架系统之上及封装胶分布于硅基板 LED 芯片之外围，其特征在于：基板侧面与封装胶接口处形成气泡结构。
本发明提供了一种提高垂直发光二极管芯片亮度的封装结构，其包含支架系统，主要用来承载吸光基板 LED 垂直芯片，支架系统可以选用金属支架，其功用为电极导通以及散热用，基板侧面与封装胶接口处形成气泡结构，利用封装胶、气泡以及吸光基板材料折射率差异，形成反射层，功用为减少或避免 LED 芯片反射出的光线被基板所吸收，并将其反射出封装结构；胶杯与支架系统的外围相连接，胶杯形状可以根据控制光形的需要进行调整； LED 芯片可以通过固晶等方式置于支架系统之上；封装胶可通过涂布等方式分布于 LED 芯片之外围。
进一步地，优选的是，所述气泡结构与吸光基板侧面之间镀覆有非亲水性材质。
进一步地，优选的是，所述吸光基板具有垂直侧面。
进一步地，优选的是，所述吸光基板具有靠近所述基板 LED 芯片的一侧上与水平平面成倾斜角并从上向下变窄的侧面。
进一步地，优选的是，所述吸光基板具有靠近所述吸光基板 LED 芯片的一侧上与水平平面成倾斜角并从上向下变窄的第一侧面及远离所述吸光基板 LED 芯片的一侧上与水平平面成垂直的第二侧面。
进一步地，优选的是，所述倾斜角的角度范围为不小于 5 °、不大于 85 °。
进一步地，优选的是，所述吸光基板可选用硅基板或者砷化镓基板等。
与现有技术相比，本发明的有益效果是：通过在封装结构中的吸光基板的侧面与封装胶接口处形成气泡结构，利用封装胶、气泡以及硅基板材料折射率差异，形成反射层，从而有效地减少或避免原本会被基板所吸收的光线，并将其反射出去，增强出光几率，进而提升垂直发光二级管芯片的光强。此外，本发明提供的封装结构适合用于照明系统，特别适合用于封装成 LED 灯珠。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
图 1 为传统的硅基板 LED 垂直芯片封装结构。
图 2 为本发明一个较佳实施例的吸光基板 LED 垂直芯片封装结构的截面示意图。
图 3 为本发明另一个较佳实施例的吸光基板 LED 垂直芯片封装结构的截面示意图。
图 4 为本发明再一个较佳实施例的吸光基板 LED 垂直芯片封装结构的截面示意图。
图中各标号表示：
1 --金属支架； 2 --胶杯； 3 -- LED 芯片； 4 --吸光基板； 5 --封装胶； 6 --蓝光（实线）； 7 --黄光（虚线）； 8 --气泡结构。
具体实施方式
下面结合附图和实施例对本发明进一步说明。
实施例 1
请参阅图 2 所示，本实施例的一种提高垂直发光二极管芯片亮度的封装结构，其包含支架系统，主要用来承载硅基板 LED 垂直芯片 3 ，支架系统可以选用金属支架 1 ，其功用为电极导通以及散热用；胶杯 2 与支架系统的外围相连接，胶杯形状可以根据控制光形的需要进行调整；硅基板 LED 芯片 3 可以通过固晶等方式置于支架系统之上；含黄色 YAG 的封装胶 5 通过涂布方式均匀分布于硅基板 LED 芯片 3 之外围；具有垂直侧面的硅基板 4 的侧面与封装胶 5 接口处形成气泡结构 8 。
上述提高垂直发光二极管芯片亮度的封装结构中，所述气泡结构是通过在硅基板 4 的垂直侧面镀覆非亲水性材质使得侧面不易与封装胶紧密贴合而形成。
请参阅图 2 所示，在该封装结构中，利用封装胶、气泡以及硅基板材料折射率差异，充当反射层，减少或避免 LED 芯片 3 反射出的光线被硅基板 4 所吸收，将光线反射出封装结构，进而提升垂直发光二级管芯片的光强，该封装结构适合用于照明系统，特别适合用于封装成 LED 灯珠。
实施例 2
请参阅图 3 所示，与实施例 1 不同的是，本实施例的另一种提高垂直发光二极管芯片亮度的封装结构，硅基板 4 具有靠近 LED 芯片的一侧上与水平平面成倾斜角并从上向下变窄的侧面。倾斜角α的角度范围为不小于 5 °、不大于 85 °，在本实施例中倾斜角α选用 60 °。
上述提高垂直发光二极管芯片亮度的封装结构中，由于硅基板 4 的侧面为从上向下变窄的倾斜状，更容易在硅基板 4 的侧面与封装胶 5 接口处形成气泡结构 8 。利用封装胶、气泡以及硅基板材料折射率差异，充当反射层，减少或避免 LED 芯片 3 反射出的光线被硅基板 4 所吸收，将光线反射出封装结构，进而提升垂直发光二级管芯片的光强，该封装结构适合用于照明系统，特别适合用于封装成 LED 灯珠。
实施例 3
请参阅图 4 所示，与实施例 1 不同的是，本实施例的再一种提高垂直发光二极管芯片亮度的封装结构，硅基板 4 具有靠近 LED 芯片的一侧上与水平平面成倾斜角并从上向下变窄的第一侧面及远离 LED 芯片的一侧上与水平平面成垂直的第二侧面。倾斜角α的角度范围为不小于 5 °、不大于 85 °，在本实施例中倾斜角α选用 45 °。
上述提高垂直发光二极管芯片亮度的封装结构中，由于硅基板 4 的侧面大致分为两段，即具有靠近 LED 芯片的一侧上与水平平面成倾斜角并从上向下变窄的第一侧面及远离 LED 芯片的一侧上与水平平面成垂直的第二侧面，这种结构使得在硅基板 4 的侧面与封装胶 5 接口处更容易形成气泡结构 8 。在该封装结构中，利用封装胶、气泡以及硅基板材料折射率差异，发挥反射作用，减少或阻挡 LED 芯片 3 反射出的光线被硅基板 4 所吸收，将光线反射出封装结构，进而实现更多的光萃取，示意光取出路径如图 4 所示。该封装结构适合用于照明系统，特别适合用于封装成 LED 灯珠。

Claims (10)

  1. 一种提高垂直发光二极管芯片亮度的封装结构，至少包括一支架系统、一胶杯与支架系统之外围相连接、一含有吸光基板 LED 芯片置于支架系统之上及封装胶分布于 LED 芯片之外围，其特征在于：基板侧面与封装胶接口处形成气泡结构。
  2. 根据权利要求 1 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述封装结构是利用封装胶、气泡以及吸光基板材料折射率差异形成反射层，减少或避免基板吸光。
  3. 根据权利要求 1 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述气泡结构与吸光基板侧面之间镀覆有非亲水性材质。
  4. 根据权利要求 1 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述吸光基板具有垂直侧面。
  5. 根据权利要求 1 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述吸光基板具有靠近所述吸光基板 LED 芯片的一侧上与水平平面成倾斜角并从上向下变窄的侧面。
  6. 根据权利要求 1 或 5 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述吸光基板具有靠近所述吸光基板 LED 芯片的一侧上与水平平面成倾斜角并从上向下变窄的第一侧面及远离所述吸光基板 LED 芯片的一侧上与水平平面成垂直的第二侧面。
  7. 根据权利要求 5 或 6 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述倾斜角的角度范围为 5 ° ~85 °。
  8. 一种照明系统，其设有发光二极管芯片的封装结构，所述封装结构至少包括：一支架系统、一胶杯与支架系统之外围相连接、一含有吸光基板 LED 芯片置于支架系统之上及封装胶分布于吸光基板 LED 芯片之外围，所述吸光基板的侧面与封装胶接口处形成气泡结构。
  9. 根据权利要求 8 所述的一种照明系统，其特征在于：所述封装结构为 LED 灯珠结构。
  10. 根据权利要求 8 所述的一种照明系统，其特征在于：所述吸光基板具有靠近所述吸光基板 LED 芯片的一侧上与水平平面成倾斜角并从上向下变窄的侧面。
PCT/CN2014/071041 2013-04-08 2014-01-22 一种提高垂直发光二极管芯片亮度的封装结构 Ceased WO2014166310A1 (zh)

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Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
CN103199184B (zh) * 2013-04-08 2016-04-20 厦门市三安光电科技有限公司 一种提高垂直发光二极管芯片亮度的封装结构
CN114038984B (zh) * 2021-12-02 2023-03-31 业成科技（成都）有限公司 微发光二极体显示器和其形成方法
CN116371672A (zh) * 2022-12-30 2023-07-04 福建天电光电有限公司 发光二极管封装点胶工艺及用于发光二极管封装体的点胶装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101060153A (zh) * 2007-05-15 2007-10-24 佛山市国星光电科技有限公司 一种侧面发光二极管及其制造工艺
CN102011952A (zh) * 2009-09-04 2011-04-13 佛山市国星光电股份有限公司 Led光源模块的制造方法及该方法的产品
CN201918426U (zh) * 2010-12-28 2011-08-03 广州市鸿利光电股份有限公司 一种大功率led
CN103199184A (zh) * 2013-04-08 2013-07-10 厦门市三安光电科技有限公司 一种提高垂直发光二极管芯片亮度的封装结构
CN103199183A (zh) * 2013-04-08 2013-07-10 厦门市三安光电科技有限公司 一种提高垂直发光二极管芯片亮度的封装结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6881980B1 (en) * 2004-06-17 2005-04-19 Chunghwa Picture Tubes, Ltd. Package structure of light emitting diode
KR101235460B1 (ko) * 2006-02-14 2013-02-20 엘지이노텍 주식회사 측면 발광형 엘이디 및 그 제조방법
JP2009004625A (ja) * 2007-06-22 2009-01-08 Sanken Electric Co Ltd 半導体発光装置
CN101320773B (zh) * 2008-07-11 2011-02-09 深圳市聚飞光电股份有限公司 提高led外量子效率的封装方法及led封装结构
CN101771126A (zh) * 2010-01-05 2010-07-07 山西乐百利特科技有限责任公司 具有高出光效率和防止光干扰功能的led芯片
CN201838619U (zh) * 2010-05-24 2011-05-18 晶科电子（广州）有限公司 一种提高led外量子效率的封装结构
KR20120082192A (ko) * 2011-01-13 2012-07-23 삼성엘이디 주식회사 발광소자 패키지
CN202839741U (zh) * 2012-10-18 2013-03-27 深圳市斯迈得光电子有限公司 一种贴片式发光二极管支架

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101060153A (zh) * 2007-05-15 2007-10-24 佛山市国星光电科技有限公司 一种侧面发光二极管及其制造工艺
CN102011952A (zh) * 2009-09-04 2011-04-13 佛山市国星光电股份有限公司 Led光源模块的制造方法及该方法的产品
CN201918426U (zh) * 2010-12-28 2011-08-03 广州市鸿利光电股份有限公司 一种大功率led
CN103199184A (zh) * 2013-04-08 2013-07-10 厦门市三安光电科技有限公司 一种提高垂直发光二极管芯片亮度的封装结构
CN103199183A (zh) * 2013-04-08 2013-07-10 厦门市三安光电科技有限公司 一种提高垂直发光二极管芯片亮度的封装结构

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