WO2014166309A1 - 一种提高垂直发光二极管芯片亮度的封装结构 - Google Patents

一种提高垂直发光二极管芯片亮度的封装结构 Download PDF

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WO2014166309A1
WO2014166309A1 PCT/CN2014/071040 CN2014071040W WO2014166309A1 WO 2014166309 A1 WO2014166309 A1 WO 2014166309A1 CN 2014071040 W CN2014071040 W CN 2014071040W WO 2014166309 A1 WO2014166309 A1 WO 2014166309A1
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chip
led
package structure
substrate
light
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PCT/CN2014/071040
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English (en)
French (fr)
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赵志伟
江彦志
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厦门市三安光电科技有限公司
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Publication of WO2014166309A1 publication Critical patent/WO2014166309A1/zh
Priority to US14/742,538 priority Critical patent/US9306138B2/en
Priority to US15/055,624 priority patent/US10505088B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Definitions

  • the invention relates to a package structure for improving the brightness of a vertical light-emitting diode chip.
  • the design of the bracket reduces or avoids the light absorption of the substrate of the vertical chip and improves the brightness of the package, and belongs to the field of light-emitting diodes.
  • the LED chips can be roughly divided into three categories, namely, a light-emitting diode chip, a flip-chip LED chip and a vertical LED chip.
  • the most widely used application-side LED chips are advantageous in that the production cost is low and the yield is high. Therefore, the current use of LED chips is more popular, but recently, with the rise of smart phones, the flash parts used in smart phones.
  • high-power LEDs are not available for high-power LED chips.
  • the development of vertical LED chips has been developed. The vertical electrode design allows vertical LED chips to withstand large power usage. Generally, it can be used. The power is about the size of the LED chip 1.5 times, but due to the design of the vertical electrode, the vertical light-emitting diode chip must also use a conductive substrate. Under the consideration of cost performance, the silicon substrate becomes an ideal choice.
  • the traditional silicon substrate LED vertical chip package structure is provided by the light-emitting diode chip after the blue light and the blue light enters the package glue to excite the yellow light, and the blue light and the yellow light are mixed to generate white light, and the blue light enters the package.
  • the encapsulating rubber particles will only absorb part of the blue light, and the remaining blue light will be refracted into the next encapsulating rubber particle, so in a series of light mixing processes, the blue light will be continuously refracted to change the path of the light, even Some of the blue light is reflected back to the chip.
  • the silicon substrate absorbs all the light in the visible range, especially for the blue and yellow light in the visible range, when the vertical light-emitting diode is used in the illumination system, For example, after sealing into LED lamp beads, the efficiency of blue light conversion white light will be deteriorated, and the brightness will decrease.
  • the technical solution of the present invention is a package structure for brightness of a novel high-efficiency vertical light-emitting diode chip, comprising at least one bracket system, a plastic cup connected to the periphery of the bracket system, and a light-absorbing substrate.
  • the LED chip is placed on the support system and the encapsulant is distributed on the periphery of the LED chip, and is characterized in that it further comprises a baffle surrounding the outer sidewall of the light absorbing substrate.
  • the invention provides a package structure for improving the brightness of a vertical light emitting diode chip, which comprises a bracket system, mainly for carrying a light absorption substrate LED
  • a bracket system mainly for carrying a light absorption substrate LED
  • the vertical chip, the bracket system can be formed into a integrally formed metal bracket with a wraparound baffle structure by filling or grooving.
  • the function of the metal bracket is for electrode conduction and heat dissipation, and the surrounding baffle structure function is to reduce or avoid the LED.
  • the light reflected by the chip is absorbed by the substrate and reflected out of the package structure; the plastic cup is connected to the periphery of the bracket system, and the shape of the plastic cup can be adjusted according to the need of controlling the light shape; the light absorption substrate LED
  • the chip can be placed on the support system by means of solid crystal or the like; the encapsulant can be distributed on the periphery of the LED chip of the light-absorbing substrate by coating or the like.
  • peripheral size of the surrounding baffle structure is greater than or equal to the size of the vertical chip of the light-absorbing substrate LED, and the light-absorbing substrate LED There is a partial gap between the substrate of the chip and the wraparound baffle so that the light absorbing substrate LED chip is placed in a metal holder with a wraparound baffle.
  • a portion where the gap between the substrate of the light-absorbing substrate LED chip and the surrounding baffle is filled with a reflective material.
  • the height of the wraparound baffle is greater than or equal to 1/2 of the thickness of the substrate of the light-absorbing substrate LED chip and less than or equal to the light-absorbing substrate
  • the thickness of the substrate of the LED chip is such that the side of the light-emitting substrate LED chip can be partially or completely covered by a wraparound baffle.
  • the light absorbing substrate may be a silicon substrate or a gallium arsenide substrate or the like.
  • the invention also provides another package structure for improving the brightness of the vertical light emitting diode chip, which comprises a bracket system, mainly for carrying the light absorption substrate LED Vertical chip, the bracket system consists of a metal bracket and a wraparound baffle placed thereon. The two are made separately, and the metal bracket is made of a metal material. The function of the metal bracket is for electrode conduction and heat dissipation, and the surrounding gear is used.
  • the function of the board structure is to reduce or avoid The light reflected by the LED chip is absorbed by the substrate and reflected out of the package structure; the plastic cup is connected to the periphery of the bracket system, and the shape of the plastic cup can be adjusted according to the need of controlling the light shape; the light absorption substrate LED
  • the chip can be placed on the support system by means of solid crystal or the like; the encapsulant can be distributed on the periphery of the LED chip of the light-absorbing substrate by coating or the like.
  • the light absorbing substrate has an LED adjacent to the light absorbing substrate a first side of the chip at an oblique angle to the horizontal plane and narrowing from the bottom to the top and a second side perpendicular to the horizontal plane on a side away from the light-emitting substrate LED chip.
  • the angle of the tilt angle ranges from 30 ° to 85 °.
  • the wraparound baffle is a plastic cup that distributes a Bragg reflective layer or a metal reflective layer or an omnidirectional reflective layer or a reflective material.
  • the substrate of the light-absorbing substrate LED chip is directly covered by the surrounding baffle, that is, there is no gap; in addition, the light-absorbing substrate LED There may also be a partial gap between the substrate of the chip and the wraparound baffle.
  • a portion where the gap between the substrate of the light-absorbing substrate LED chip and the surrounding baffle is filled with a reflective material.
  • the height of the wraparound baffle is greater than or equal to 1/2 of the thickness of the substrate of the light-absorbing substrate LED chip and less than or equal to the light-absorbing substrate
  • the substrate thickness of the LED chip is such that the side of the light-emitting substrate LED chip can be partially or completely surrounded by a wraparound baffle.
  • the invention has the beneficial effects that by adding a baffle structure in the bracket system of the package structure, the light originally absorbed by the light-absorbing substrate can be effectively avoided and reflected out of the package structure, and enhanced.
  • the probability of light emission increases the light intensity of the vertical light-emitting diode chip.
  • the package structure provided by the present invention is suitable for use in a lighting system, and is particularly suitable for packaging into LED lamp beads.
  • Figure 1 shows a conventional silicon substrate LED vertical chip package structure.
  • FIG. 2 is a schematic cross-sectional view showing a vertical chip package structure of a light-absorbing substrate LED according to a preferred embodiment of the present invention.
  • FIG 3 is a cross-sectional view showing a vertical chip package structure of a light-absorbing substrate LED according to another preferred embodiment of the present invention.
  • FIG. 4 is a cross-sectional view showing a vertical chip package structure of a light-absorbing substrate LED according to still another preferred embodiment of the present invention.
  • a package structure for improving the brightness of a vertical LED chip of the embodiment includes a bracket system for carrying a silicon substrate.
  • LED vertical chip 3 the bracket system is formed into a integrally formed metal bracket 1 with a wraparound baffle structure 8 by slotting, and the metal bracket 1 functions as an electrode for conduction and heat dissipation, and a wraparound baffle structure 8
  • the function of reducing or avoiding the light reflected by the LED vertical chip 3 is absorbed by the silicon substrate 4 and reflected out of the package structure, wherein the height of the surrounding baffle is equal to the thickness of the substrate of the silicon substrate LED chip;
  • 2 Connected to the periphery of the bracket system, the shape of the plastic cup can be adjusted according to the needs of the control light shape;
  • the silicon substrate LED chip is placed on the support system by means of solid crystal;
  • the package rubber containing yellow YAG phosphor 5 It is uniformly distributed on the silicon substrate LED chip 3 by coating.
  • the size of the wraparound baffle structure is the same as that of the silicon substrate.
  • the size of the vertical chip is adapted, that is, the peripheral size of the surrounding baffle structure is greater than or equal to the size of the vertical chip of the silicon substrate LED, and a gap exists between the substrate of the silicon substrate LED chip and the surrounding baffle for the silicon substrate.
  • the LED chip is placed in a metal holder with a wraparound baffle.
  • a wraparound baffle is added to improve the brightness of the vertical LED chip, which can effectively avoid the blue light and yellow light that would otherwise be absorbed by the silicon substrate. And reflecting it out of the package structure to improve the light intensity of the vertical LED chip.
  • the package structure is suitable for lighting systems, and is particularly suitable for packaging into LED lamp beads.
  • another package structure for improving the brightness of a vertical LED chip of the present embodiment includes a bracket system mainly for carrying a silicon substrate LED vertical chip 4, and the bracket system is composed of a metal bracket 1 It is composed of a wraparound baffle 8 placed thereon, and the two are made separately, and the metal bracket 1 is made of a metal material.
  • the function of the metal bracket 1 is for conducting and dissipating the electrode, and the surrounding baffle structure 8
  • the function of reducing or avoiding the light reflected by the LED chip is absorbed by the silicon substrate and reflecting it out of the package structure, wherein the height of the surrounding baffle is greater than 1/2 of the thickness of the substrate of the silicon substrate LED chip.
  • the plastic cup 2 is connected to the periphery of the bracket system, and the shape of the plastic cup can be adjusted according to the need of controlling the light shape;
  • the silicon substrate LED chip 4 It can be placed on the support system by means of die bonding;
  • the encapsulant 5 containing yellow YAG phosphor is evenly distributed on the silicon substrate LED chip 4 by coating.
  • the size of the surrounding baffle structure and the silicon substrate LED is adapted, that is, the peripheral size of the surrounding baffle structure is greater than or equal to the silicon substrate LED
  • the size of the vertical chip; the wraparound baffle is a plastic cup coated with a reflective material on the surface, which can be prepared separately or simultaneously in the design of the rubber cup mold.
  • a wraparound baffle is added to improve the brightness of the vertical LED chip, which can effectively avoid the blue light and yellow light that would otherwise be absorbed by the silicon substrate. And reflecting it out of the package structure to improve the brightness of the vertical LED chip.
  • the package structure is suitable for lighting systems, and is particularly suitable for packaging into LED lamp beads.
  • the package structure for improving the brightness of the vertical LED chip of the present embodiment is on the silicon substrate LED.
  • white glue mirror ink
  • another package structure for improving the brightness of the vertical LED chip of the embodiment has a substrate having a proximity to the silicon substrate.
  • the angle of inclination ⁇ ranges from 30 ° to 85 °, in this embodiment, the tilt angle ⁇ is selected as 55 °.
  • the wraparound baffle may be one of a distributed Bragg reflection layer or a metal reflective layer or an omnidirectional reflection layer.
  • a distributed Bragg reflection layer having a high and low alternating refractive index material is selected, and the distributed Bragg reflection layer can pass It is formed on the side surface of the substrate by vapor deposition or sputtering, that is, it is adhered to the side surface of the substrate and covered. In this way, by adjusting the tilt angle of the first side and matching the surrounding baffle on the side of the substrate, more light extraction is achieved, and the light extraction path is illustrated as shown in the figure. 4 is shown.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

提供了一种垂直发光二极管芯片亮度的封装结构，至少包括一支架系统（1）、一胶杯（2）与支架系统（1）之外围相连接、一含有吸光基板（4）的LED芯片（3）置于支架系统（1）之上及封装胶（5）分布于LED芯片（3）之外围，其特征在于：还包括挡板（8），其包围所述吸光基板（4）的外侧壁。通过在封装结构的支架系统（1）中增设挡板（8）结构。由此，可以有效地避免原本会被吸光基板（4）所吸收的光线，并将其反射出封装结构，增强出光几率，进而提升垂直发光二极管芯片（3）的光强。

Description

一种提高垂直发光二极管芯片亮度的封装结构
本申请主张如下优先权：中国发明专利申请号201310119165.6，题为 ' 一种提高垂直发光二极管芯片亮度的封装结构 ' ，于 2013 年 4 月 8 日提交。上述申请的全部内容通过引用结合在本申请中。
技术领域
本发明涉及一种提高垂直发光二极管芯片亮度的封装结构，通过支架的设计减少或避免垂直芯片的基板吸光，提升封装亮度，属于发光二极管领域。
背景技术
发光二极管芯片按结构分，大致可以分为三大类，分别为正装发光二极管芯片、倒装发光二极管芯片以及垂直发光二极管芯片。目前，应用端应用最多的为正装发光二极管芯片，其优势为制作成本较低良率高，所以目前正装发光二极管芯片使用较普及，但近来随着智能型手机崛起，智能型手机使用的闪光灯部分一般为高功率发光二极管的灯珠，其所需求的高功率正装芯片已经无法满足，开发垂直发光二极管芯片应运而生，垂直电极设计使得垂直发光二极管芯片可以承受较大的功率使用，一般可使用的功率约为正装发光二极管芯片的 1.5 倍，但由于垂直电极的设计，所以垂直发光二极体芯片也须采用导电基板，在性价比的考虑下，硅基板成为较为理想的选择。
传统的硅基板 LED 垂直芯片封装结构，如图 1 所示，由发光二级管芯片提供蓝光后与蓝光进入封装胶后激发出黄光，利用蓝光与黄光混合后产生白光，在蓝光进入封装胶颗粒的过程中封装胶颗粒只会吸收部分蓝光，而剩余的蓝光会被折射进入下一颗封装胶颗粒，所以在一系列混光的过程中蓝光会不断的被折射改变光的路径，甚至有些蓝光会被反射回芯片，由于硅基板会对所有可见光范围内的光进行吸收，特别是对于在可见光范围内的蓝光与黄光有一定的吸收率，所以当垂直发光二极管用于照明系统，比如封成 LED 灯珠后，会造成蓝光转换白光效率变差，其亮度会下降。
发明内容
本发明的目的是提供一种提高垂直发光二极管芯片亮度的封装结构，通过改进支架系统的设计来提升垂直发光二极管的亮度。
为实现以上目的，本发明的技术方案是一种新型高效垂直发光二极管芯片亮度的封装结构，至少包括一支架系统、一胶杯与支架系统之外围相连接、一含有吸光基板的 LED 芯片置于支架系统之上及封装胶分布于 LED 芯片之外围，其特征在于：还包括挡板，其包围所述吸光基板的外侧壁。
本发明提供了一种提高垂直发光二极管芯片亮度的封装结构，其包含支架系统，主要用来承载吸光基板 LED 垂直芯片，支架系统可以通过充压或开槽制成一体成型的具有环绕式挡板结构的金属支架，金属支架的功用为电极导通以及散热用，环绕式挡板结构功用为减少或避免 LED 芯片反射出的光线被基板所吸收，并将其反射出封装结构；胶杯与支架系统之外围相连接，胶杯形状可以根据控制光形的需要进行调整；吸光基板 LED 芯片可以通过固晶等方式置于支架系统之上；封装胶可以通过涂布等方式分布于吸光基板 LED 芯片之外围。
进一步地，所述环绕式挡板结构的外围尺寸大于或者等于吸光基板 LED 垂直芯片的尺寸，吸光基板 LED 芯片的基板与环绕式挡板之间存有部分间隙，以便吸光基板 LED 芯片置于具有环绕式挡板的金属支架之中。
进一步地，所述吸光基板 LED 芯片的基板与环绕式挡板之间存有间隙的部分填充有反射性材料。
进一步地，所述环绕式挡板的高度大于或者等于吸光基板 LED 芯片的基板厚度的 1/2 且小于或者等于吸光基板 LED 芯片的基板厚度，以便于吸光基板 LED 芯片侧面能部分或全部为环绕式挡板所包覆。
进一步地，所述吸光基板可选用硅基板或者砷化镓基板等。
本发明还提供了另一种提高垂直发光二极管芯片亮度的封装结构，其包含支架系统，主要用来承载吸光基板 LED 垂直芯片，支架系统由金属支架与置于其上的环绕式挡板组成，二者为分别制得，选用金属材料制成金属支架，金属支架的功用为电极导通以及散热用，环绕式挡板结构的功用为减少或避免 LED 芯片反射出的光线被基板所吸收，并将其反射出封装结构；胶杯与支架系统之外围相连接，胶杯形状可以根据控制光形的需要进行调整；吸光基板 LED 芯片可以通过固晶等方式置于支架系统之上；封装胶可以通过涂布等方式分布于吸光基板 LED 芯片之外围。
进一步地，所述吸光基板具有靠近所述吸光基板 LED 芯片的一侧上与水平平面成倾斜角并从下向上变窄的第一侧面及远离所述吸光基板 LED 芯片的一侧上与水平平面成垂直的第二侧面。
进一步地，所述倾斜角的角度范围为 30 ° ~85 °。
进一步地，所述环绕式挡板为分布布拉格反射层或金属反射层或全方位反射层或涂布反射材料的胶杯。
进一步地，所述吸光基板 LED 芯片的基板为环绕式挡板所直接包覆，即不存在间隙；此外，吸光基板 LED 芯片的基板与环绕式挡板之间也可以存有部分间隙。
进一步地，所述吸光基板 LED 芯片的基板与环绕式挡板之间存有间隙的部分填充有反射性材料。
进一步地，所述环绕式挡板的高度大于或者等于吸光基板 LED 芯片的基板厚度的 1/2 且小于或者等于吸光基板 LED 芯片的基板厚度，以便于吸光基板 LED 芯片侧面能部分或全部为环绕式挡板所包围。
与现有技术相比，本发明的有益效果是：通过在封装结构的支架系统中增设挡板结构，可以有效地避免原本会被吸光基板所吸收的光线，并将其反射出封装结构，增强出光几率，进而提升垂直发光二级管芯片的光强。此外，本发明提供的封装结构适合用于照明系统，特别适合用于封装成 LED 灯珠。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
图 1 为传统的硅基板 LED 垂直芯片封装结构。
图 2 为本发明一个较佳实施例的吸光基板 LED 垂直芯片封装结构的截面示意图。
图 3 为本发明另一个较佳实施例的吸光基板 LED 垂直芯片封装结构的截面示意图。
图 4 为本发明再一个较佳实施例的吸光基板 LED 垂直芯片封装结构的截面示意图。
图中各标号表示：
1 --金属支架； 2 --胶杯； 3 -- LED 芯片； 4 --吸光基板； 5 --封装胶； 6 --蓝光（实线）； 7 --黄光（虚线）； 8 --环绕式挡板结构。
具体实施方式
下面结合附图和实施例对本发明进一步说明。
实施例 1
请参阅图 2 所示，本实施例的一种提高垂直发光二极管芯片亮度的封装结构，其包含支架系统，主要用来承载硅基板 LED 垂直芯片 3 ，支架系统通过开槽制成一体成型的具有环绕式挡板结构 8 的金属支架 1 ，金属支架 1 的功用为电极导通以及散热用，环绕式挡板结构 8 的功用为减少或避免 LED 垂直芯片 3 反射出的光线被硅基板 4 所吸收，并将其反射出封装结构，其中环绕式挡板的高度等于硅基板 LED 芯片的基板厚度；胶杯 2 与支架系统之外围相连接，胶杯形状可以根据控制光形的需要进行调整；硅基板 LED 芯片通过固晶方式置于支架系统之上；含黄色 YAG 荧光粉的封装胶 5 通过涂布方式均匀分布于硅基板 LED 芯片 3 之上。
上述提高垂直发光二极管芯片亮度的封装结构中，环绕式挡板结构的尺寸要与于硅基板 LED 垂直芯片的尺寸相适应，即环绕式挡板结构的外围尺寸大于或者等于硅基板 LED 垂直芯片的尺寸，硅基板 LED 芯片的基板与环绕式挡板之间存有部分间隙，以便硅基板 LED 芯片置于具有环绕式挡板的金属支架之中。
请参阅图 2 所示，增设了环绕式挡板的提高垂直发光二极管芯片亮度的封装结构，可以有效地避免原本会被硅基板所吸收的蓝光 6 与黄光 7 ，并将其反射出封装结构，进而提升垂直发光二级管芯片的光强，该封装结构适合用于照明系统，特别适合用于封装成 LED 灯珠。
实施例 2
请参阅图 3 所示，本实施例的另一种提高垂直发光二极管芯片亮度的封装结构，其包含支架系统，主要用来承载硅基板 LED 垂直芯片 4 ，支架系统由金属支架 1 与置于其上的环绕式挡板 8 组成，二者为分别制得，选用金属材料制成金属支架 1 ，金属支架 1 的功用为电极导通以及散热用，环绕式挡板结构 8 的功用为减少或避免 LED 芯片反射出的光线被硅基板所吸收，并将其反射出封装结构，其中环绕式挡板的高度大于硅基板 LED 芯片的基板厚度的 1/2 且小于硅基板 LED 芯片的基板厚度；胶杯 2 与支架系统之外围相连接，胶杯形状可以根据控制光形的需要进行调整；硅基板 LED 芯片 4 可以通过固晶方式置于支架系统之上；含黄色 YAG 荧光粉的封装胶 5 通过涂布方式均匀分布于硅基板 LED 芯片 4 之上。
上述提高垂直发光二极管芯片亮度的封装结构中，环绕式挡板结构的尺寸要与硅基板 LED 垂直芯片的尺寸相适应，即环绕式挡板结构的外围尺寸大于或者等于硅基板 LED 垂直芯片的尺寸；环绕式挡板为表面涂布有反射材料的胶杯，其可以单独制备，也可以在胶杯模具设计时同时制得。
请参阅图 3 所示，增设了环绕式挡板的提高垂直发光二极管芯片亮度的封装结构，可以有效地避免原本会被硅基板所吸收的蓝光 6 与黄光 7 ，并将其反射出封装结构，从而提高垂直发光二级管芯片的亮度，该封装结构适合用于照明系统，特别适合用于封装成 LED 灯珠。
实施例 3
与实施例 1 不同的是，本实施例的提高垂直发光二极管芯片亮度的封装结构，其在硅基板 LED 芯片的基板与环绕式挡板之间存有间隙的部分，填充具有反射性材料，如白胶（镜面油墨），如此可以进一步增强将原本会被硅基板吸收的蓝光与黄光反射回去，从而更进一步提升垂直发光二级管芯片的光强。
实施例 4
请参阅图 4 所示，与实施例 2 不同的是，本实施例的再一种提高垂直发光二极管芯片亮度的封装结构，其基板具有靠近硅基板 LED 芯片的一侧上与水平平面成倾斜角并从下向上变窄的第一侧面及远离硅基板 LED 芯片的一侧上与水平平面成垂直的第二侧面。倾斜角α的角度范围为 30 ° ~85 °，在本实施例中倾斜角α选用 55 °。环绕式挡板可以为分布布拉格反射层或金属反射层或全方位反射层中的一种，在本实施例中选用具有高低交替折射率材料组成的分布布拉格反射层，该分布布拉格反射层可以通过蒸镀或者溅镀等方式形成于基板侧面上，即紧贴在基板侧面，将其包覆。如此，通过调整第一侧面的倾斜角度并配合基板侧面的环绕式挡板，实现更多的光萃取，示意光取出路径如图 4 所示。

Claims (12)

  1. 一种提高垂直发光二极管芯片亮度的封装结构，至少包括一支架系统、一胶杯与支架系统之外围相连接、一含有吸光基板的 LED 芯片置于支架系统之上及封装胶分布于 LED 芯片之外围，其特征在于：还包括挡板，其包围所述吸光基板的外侧壁，用于减少基板吸光。
  2. 根据权利要求 1 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述挡板与所述支架系统为一体成型。
  3. 根据权利要求 1 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述挡板与所述支架系统非一体成型。
  4. 根据权利要求 3 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述挡板为分布布拉格反射层或金属反射层或全方位反射层或涂布反射材料的胶杯。
  5. 根据权利要求 1 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述 LED 芯片的基板与挡板之间存有部分间隙。
  6. 根据权利要求 5 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述 LED 芯片的基板与挡板之间存有间隙的部分填充有反射性材料。
  7. 根据权利要求 1 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述挡板紧贴于所述 LED 芯片的吸光基板的侧壁。
  8. 根据权利要求 1 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述挡板的高度大于或者等于吸光基板的 LED 芯片的基板厚度的 1/2 且小于或者等于吸光基板的 LED 芯片的基板厚度。
  9. 根据权利要求 1 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述吸光基板具有靠近所述 LED 芯片的一侧上与水平平面成倾斜角并从下向上变窄的第一侧面及远离所述 LED 芯片的一侧上与水平平面成垂直的第二侧面。
  10. 根据权利要求 9 所述的一种提高垂直发光二极管芯片亮度的封装结构，其特征在于：所述倾斜角的角度范围为 30 ° ~85 °。
  11. 一种照明系统，其设有发光二极管芯片的封装结构，所述封装结构至少包括：一支架系统、一胶杯与支架系统之外围相连接、一硅基板 LED 芯片置于支架系统之上及封装胶分布于硅基板 LED 芯片之外围，所述硅基板的侧面与封装胶接口处形成气泡结构。
  12. 根据权利要求 11 所述的一种照明系统，其特征在于：所述封装结构为 LED 灯珠结构。
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