WO2014156926A1 - 電子デバイス封止用樹脂シート及び電子デバイスパッケージの製造方法 - Google Patents
電子デバイス封止用樹脂シート及び電子デバイスパッケージの製造方法 Download PDFInfo
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- WO2014156926A1 WO2014156926A1 PCT/JP2014/057689 JP2014057689W WO2014156926A1 WO 2014156926 A1 WO2014156926 A1 WO 2014156926A1 JP 2014057689 W JP2014057689 W JP 2014057689W WO 2014156926 A1 WO2014156926 A1 WO 2014156926A1
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
Definitions
- the present invention relates to an electronic device sealing resin sheet and an electronic device package manufacturing method.
- an electronic device package typically, one or a plurality of electronic devices fixed to a substrate or the like are sealed with a sealing resin, and the sealing body is packaged in units of electronic devices as necessary.
- a sealing resin a sheet-shaped sealing resin may be used.
- Patent Document 1 describes that a resin sheet is formed by applying a varnish on a film and then drying the coating film.
- a solvent is used for varnish preparation. If the solvent remains in the resin sheet, the solvent volatilizes due to heating during thermosetting or solder reflow, and outgas is generated. It is difficult to sufficiently volatilize a solvent from a resin sheet produced by solvent coating, and it is particularly difficult for a resin sheet having a large sheet thickness.
- An object of the present invention is to solve the above-mentioned problems and to provide a resin sheet having a large sheet thickness and a reduced outgas amount.
- the present invention relates to a resin sheet for sealing an electronic device having a thickness of 100 to 2000 ⁇ m and a gas amount generated when cured at 150 ° C. for 1 hour is 500 ppm or less.
- the 1% weight reduction temperature of the cured product obtained by curing the resin sheet for sealing an electronic device at 150 ° C. for 1 hour is preferably 260 ° C. or higher.
- the temperature is 260 ° C. or higher, the amount of volatile components in the resin sheet is reduced, and the amount of gas (outgas) generated during solder reflow is reduced.
- the cured product obtained by curing the electronic device sealing resin sheet at 150 ° C. for 1 hour is heated from 40 ° C. to 260 ° C. at a heating rate of 10 ° C./min, and then heated at 260 ° C. for 1 minute. It is preferable that the amount of gas generated at the time is 500 ppm or less.
- the heating condition that is the premise of the gas amount assumes a solder reflow profile. When the gas amount is 500 ppm or less, the amount of gas (outgas) generated during solder reflow is reduced.
- the present invention also provides a sealing step in which the electronic device sealing resin sheet is laminated on the electronic device so as to cover one or more electronic devices, and the electronic device sealing resin sheet is cured.
- the present invention relates to a method for manufacturing an electronic device package, which includes a sealing body forming step of forming.
- FIG. 1 is a cross-sectional view schematically showing a resin sheet 11 according to an embodiment of the present invention.
- the resin sheet 11 is typically provided in a state of being laminated on a support 11a such as a polyethylene terephthalate (PET) film. Note that a release treatment may be performed on the support 11a in order to easily peel off the resin sheet 11.
- PET polyethylene terephthalate
- the thickness of the resin sheet 11 is relatively thick, specifically, 100 to 2000 ⁇ m. Conventionally, it has been difficult to reduce the amount of outgas with a resin sheet having a thickness within the above range, but the amount of outgas with resin sheet 11 is reduced.
- the thickness of the resin sheet 11 is preferably 150 ⁇ m or more. On the other hand, the thickness of the resin sheet 11 is preferably 1000 ⁇ m or less.
- the amount of gas (outgas) generated when the resin sheet 11 is cured at 150 ° C. for 1 hour is 500 ppm or less, preferably 300 ppm or less. Since it is 500 ppm or less, the amount of outgas at the time of curing is reduced, and corrosion and malfunction of the electronic device due to the outgas can be reduced.
- the lower limit of the amount of gas generated when cured at 150 ° C. for 1 hour is not particularly limited, and is, for example, 30 ppm or more.
- the amount of gas generated when cured at 150 ° C. for 1 hour can be measured by the method described in Examples.
- the 1% weight reduction temperature of the cured product obtained by curing the resin sheet 11 at 150 ° C. for 1 hour is preferably 260 ° C. or higher, and preferably 300 ° C. or higher.
- the upper limit of the 1% weight reduction temperature of the cured product obtained by curing the resin sheet 11 at 150 ° C. for 1 hour is not particularly limited, but is, for example, 500 ° C. or less.
- the 1% weight reduction temperature of the cured product obtained by curing the resin sheet 11 at 150 ° C. for 1 hour can be measured by the method described in Examples.
- Gas generated when the cured product obtained by curing the resin sheet 11 at 150 ° C. for 1 hour is heated from 40 ° C. to 260 ° C. at a heating rate of 10 ° C./min and then heated at 260 ° C. for 1 minute.
- the amount is preferably 500 ppm or less.
- the heating condition that is the premise of the gas amount assumes a solder reflow profile. When the gas amount is 500 ppm or less, the amount of gas (outgas) generated during solder reflow is reduced. Although a minimum is not specifically limited, It is 30 ppm or more. Gas generated when the cured product obtained by curing the resin sheet 11 at 150 ° C. for 1 hour is heated from 40 ° C. to 260 ° C. at a heating rate of 10 ° C./min and then heated at 260 ° C. for 1 minute. The amount can be measured by the method described in the examples.
- the method for producing the resin sheet 11 is not particularly limited, but a method of preparing a kneaded product of each component described later and plastically processing the obtained kneaded product into a sheet shape is preferable.
- the resin sheet 11 can be produced without using a solvent, the amount of outgas can be reduced.
- the resin sheet 11 can be produced without lamination. (The resin sheet 11 can be produced in a lump). Therefore, there is no fear of delamination. The uniformity of the sheet thickness is also improved.
- the surface area is smaller than in the case of stacking, low moisture absorption can be achieved, and as a result, the outgas amount can be reduced.
- each component described later for example, epoxy resin, phenol resin, thermoplastic resin, inorganic filler, curing accelerator, etc.
- a known kneader such as a mixing roll, a pressure kneader, or an extruder.
- a kneaded material is prepared, and the obtained kneaded material is plastically processed into a sheet shape.
- the temperature is preferably equal to or higher than the softening point of each component described above, for example, 30 to 150 ° C., preferably 40 to 140 ° C., more preferably 60 to 120 in consideration of the thermosetting property of the epoxy resin.
- the time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.
- the kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere). Thereby, while being able to deaerate, the penetration
- the pressure under reduced pressure is preferably 0.1 kg / cm 2 or less, more preferably 0.05 kg / cm 2 or less. When it is 0.1 kg / cm 2 or less, the amount of outgas can be reduced satisfactorily.
- the lower limit of the pressure under reduced pressure is not particularly limited, but is, for example, 1 ⁇ 10 ⁇ 4 kg / cm 2 or more.
- the kneaded material after melt-kneading is preferably subjected to plastic working in a high temperature state without cooling.
- the plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendering method.
- the plastic working temperature is preferably not less than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C. in consideration of the thermosetting property and moldability of the epoxy resin. is there.
- the resin sheet 11 may have a single layer structure or a multilayer structure in which two or more resin sheets are laminated, but there is no fear of delamination, the sheet thickness is highly uniform, and the moisture absorption is reduced.
- a single layer structure is preferred because it is easy.
- Resin sheet 11 preferably contains an epoxy resin and a phenol resin. Thereby, favorable thermosetting is obtained.
- the epoxy resin is not particularly limited.
- triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.
- the epoxy equivalent is 150 to 250 and the softening point or the melting point is 50 to 130 ° C., solid at room temperature. From the viewpoint, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable.
- the phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin.
- a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used.
- These phenolic resins may be used alone or in combination of two or more.
- phenolic resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and in particular, phenol novolak from the viewpoint of high curing reactivity. Resin can be used suitably. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
- the blending ratio of the epoxy resin and the phenol resin is blended so that the total of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin from the viewpoint of curing reactivity. It is preferable to use 0.9 to 1.2 equivalents.
- the total content of the epoxy resin and the phenol resin in the resin sheet 11 is preferably 2.0% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to an electronic device, a board
- the total content of the epoxy resin and the phenol resin in the resin sheet 11 is preferably 20% by weight or less, and more preferably 10% by weight or less. If it is 20% by weight or less, the hygroscopicity can be kept low.
- the resin sheet 11 preferably contains a thermoplastic resin. Thereby, the handling property in a non-hardened state and the low stress property of hardened
- Thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity.
- Polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, styrene-isobutylene-styrene block copolymer Can be mentioned.
- These thermoplastic resins can be used alone or in combination of two or more. Of these, a styrene-isobutylene-styrene block copolymer is preferred from the viewpoint of low stress and low water absorption.
- the content of the thermoplastic resin in the resin sheet 11 is preferably 1.0% by weight or more, and more preferably 1.5% by weight or more.
- flexibility and flexibility are acquired as it is 1.0 weight% or more.
- the content of the thermoplastic resin in the resin sheet 11 is preferably 3.5% by weight or less, and more preferably 3% by weight or less. Adhesiveness with an electronic device or a board
- substrate can be improved as it is 3.5 weight% or less.
- the resin sheet 11 preferably contains an inorganic filler.
- the inorganic filler is not particularly limited, and various conventionally known fillers can be used.
- quartz glass, talc, silica such as fused silica and crystalline silica
- alumina aluminum nitride, silicon nitride And boron nitride powder.
- silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.
- silica powder is preferable, and fused silica powder is more preferable.
- fused silica powder examples include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable. Among these, those having an average particle diameter in the range of 10 to 30 ⁇ m are preferable, and those having a mean particle diameter in the range of 15 to 25 ⁇ m are more preferable.
- the average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
- the content of the inorganic filler in the resin sheet 11 is preferably 70% by volume or more, and more preferably 74% by volume or more.
- a linear expansion coefficient can be designed low as it is 70 volume% or more.
- the content of the inorganic filler is preferably 90% by volume or less, and more preferably 85% by volume or less.
- liquidity, and adhesiveness are favorably obtained as it is 90 volume% or less.
- the content of the inorganic filler can be explained by using “wt%” as a unit.
- the content of silica will be described in units of “% by weight”. Since silica usually has a specific gravity of 2.2 g / cm 3 , the preferred range of the silica content (% by weight) is, for example, as follows. That is, the content of silica in the resin sheet 11 is preferably 81% by weight or more, and more preferably 84% by weight or more. 94 weight% or less is preferable and, as for content of the silica in the resin sheet 11, 91 weight% or less is more preferable.
- the preferred range of the alumina content is, for example, as follows. That is, the content of alumina in the resin sheet 11 is preferably 88% by weight or more, and more preferably 90% by weight or more. 97 weight% or less is preferable and, as for content of the alumina in the resin sheet 11, 95 weight% or less is more preferable.
- the resin sheet 11 preferably contains a curing accelerator.
- the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
- organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate
- 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
- 2-phenyl-4,5-dihydroxymethylimidazole is preferable because the curing reaction does not rapidly proceed even when the temperature rises during kneading and the resin sheet 11 can be satisfactorily produced.
- the content of the curing accelerator is preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the total of the epoxy resin and the phenol resin.
- Resin sheet 11 preferably contains a flame retardant component. This can reduce the expansion of combustion when ignition occurs due to component short-circuiting or heat generation.
- a flame retardant component for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxides; phosphazene flame retardants, etc. should be used. Can do. Of these, phosphazene-based flame retardants are preferred, and compounds represented by formula (1) or formula (2) are preferred because they are excellent in flame retardancy and strength after curing.
- R 1 and R 2 are the same or different and are monovalent having at least one group selected from the group consisting of an alkoxy group, a phenoxy group, an amino group, a hydroxyl group, an allyl group, or these groups
- R 3 and R 5 are the same or different and are monovalent having at least one group selected from the group consisting of an alkoxy group, a phenoxy group, an amino group, a hydroxyl group, an allyl group, or these groups
- R 4 represents an organic group
- R 4 represents a divalent organic group having at least one group selected from the group consisting of an alkoxy group, a phenoxy group, an amino group, a hydroxyl group and an allyl group
- y represents 3 to 25 Represents an integer
- z represents an integer of 3 to 25.
- alkoxy group for R 1 and R 2 examples include a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, and a t-butoxy group. Of these, alkoxy groups having 4 to 10 carbon atoms are preferable.
- Examples of the phenoxy group for R 1 and R 2 include a group represented by the formula (3).
- R 11 represents hydrogen, a hydroxyl group, an alkyl group, an alkoxy group, a glycidyl group, or a monovalent organic group having at least one group selected from the group consisting of these groups.
- Examples of the alkyl group for R 11 include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, a tert-butyl group, a pentyl group, and a hexyl group. And heptyl, 2-ethylhexyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, octadecyl and the like.
- Examples of the alkoxy group for R 11 include the same groups as the alkoxy groups for R 1 and R 2 .
- a phenoxy group is preferable and a group represented by the formula (3) is more preferable because flame retardancy and strength after curing can be favorably obtained.
- X represents an integer of 3 to 25, but 3 to 10 is preferable and 3 to 4 is more preferable because flame retardancy and strength after curing can be obtained satisfactorily.
- examples of the alkoxy group of R 3 and R 5 include a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, and a t-butoxy group. Of these, alkoxy groups having 4 to 10 carbon atoms are preferable.
- Examples of the phenoxy group for R 3 and R 5 include a group represented by the formula (3).
- the monovalent organic group having at least one group selected from the group consisting of an alkoxy group, a phenoxy group, an amino group, a hydroxyl group and an allyl group in R 3 and R 5 is not particularly limited.
- a phenoxy group is preferable and a group represented by the formula (3) is more preferable because flame retardancy and strength after curing can be favorably obtained.
- Examples of the alkoxy group contained in the divalent organic group represented by R 4 include a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, and a t-butoxy group. Of these, alkoxy groups having 4 to 10 carbon atoms are preferable.
- Examples of the phenoxy group contained in the divalent organic group represented by R 4 include a group represented by the formula (3).
- Y represents an integer of 3 to 25, but 3 to 10 is preferable because flame retardancy and strength after curing can be obtained satisfactorily.
- Z represents an integer of 3 to 25, but 3 to 10 is preferable because flame retardancy and strength after curing can be obtained satisfactorily.
- the content of the phosphorus element contained in the phosphazene flame retardant is preferably 12% by weight or more.
- the content of the flame retardant component is preferably 10% by weight or more, more preferably 15% by weight or more, in 100% by weight of the organic component (all components excluding the inorganic filler).
- a flame retardance is favorably acquired as it is 10 weight% or more.
- the content of the flame retardant component is preferably 30% by weight or less, and more preferably 25% by weight or less. When the content is 30% by weight or less, there is a tendency that there is little decrease in physical properties of the cured product (specifically, physical properties such as glass transition temperature and high-temperature resin strength).
- the resin sheet 11 preferably contains a silane coupling agent.
- the silane coupling agent is not particularly limited, and examples thereof include 3-glycidoxypropyltrimethoxysilane.
- the content of the silane coupling agent in the resin sheet 11 is preferably 0.1 to 3% by weight. When it is 0.1% by weight or more, sufficient strength of the cured product can be obtained and the water absorption rate can be reduced. If it is 3% by weight or less, the outgas amount can be kept low.
- the resin sheet 11 preferably contains a pigment.
- the pigment is not particularly limited, and examples thereof include carbon black.
- the content of the pigment in the resin sheet 11 is preferably 0.1 to 2% by weight. When the content is 0.1% by weight or more, good marking properties can be obtained. When the content is 2% by weight or less, a cured product strength is sufficiently obtained.
- the resin sheet 11 is a SAW (Surface Acoustic Wave) filter; a MEMS (Micro Electro Mechanical Systems) such as a pressure sensor and a vibration sensor; an IC (integrated circuit) such as an LSI; a semiconductor such as a transistor; a capacitor; an electronic device such as a resistor Used for sealing.
- SAW Surface Acoustic Wave
- MEMS Micro Electro Mechanical Systems
- IC integrated circuit
- semiconductor such as a transistor
- a capacitor an electronic device such as a resistor Used for sealing.
- it can use suitably for the sealing of the electronic device (specifically SAW filter, MEMS) which needs hollow sealing, and can use it especially suitably for sealing of a SAW filter.
- the sealing method is not particularly limited, and examples thereof include a method in which an uncured resin sheet 11 is laminated on a substrate so as to cover an electronic device on the substrate, and then the resin sheet 11 is cured and sealed. . It does not specifically limit as a board
- substrate For example, a printed wiring board, a ceramic substrate, a silicon substrate, a metal substrate etc. are mentioned.
- FIGS. 2A to 2C are diagrams each schematically showing one step of a method for manufacturing an electronic device package according to an embodiment of the present invention.
- the SAW filter 13 mounted on the printed wiring board 12 is hollow-sealed with the resin sheet 11 to produce an electronic device package.
- a printed wiring board 12 on which a plurality of SAW filters 13 are mounted is prepared (see FIG. 2A).
- the SAW filter 13 can be formed by dicing a piezoelectric crystal on which predetermined comb-shaped electrodes are formed by a known method.
- a known device such as a flip chip bonder or a die bonder can be used.
- the SAW filter 13 and the printed wiring board 12 are electrically connected via protruding electrodes 13a such as bumps.
- a hollow portion 14 is maintained between the SAW filter 13 and the printed wiring board 12 so as not to inhibit the propagation of surface acoustic waves on the surface of the SAW filter.
- the distance between the SAW filter 13 and the printed wiring board 12 can be set as appropriate, and is generally about 15 to 50 ⁇ m.
- the resin sheet 11 is laminated on the printed wiring board 12 so as to cover the SAW filter 13, and the SAW filter 13 is resin-sealed with the resin sheet 11 (see FIG. 2B).
- the resin sheet 11 functions as a sealing resin for protecting the SAW filter 13 and its accompanying elements from the external environment.
- the method of laminating the resin sheet 11 on the printed wiring board 12 is not particularly limited, and can be performed by a known method such as hot press or laminator.
- hot press conditions the temperature is, for example, 40 to 100 ° C., preferably 50 to 90 ° C.
- the pressure is, for example, 0.1 to 10 MPa, preferably 0.5 to 8 MPa
- the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes.
- it is preferable to press under reduced pressure conditions for example, 0.1 to 5 kPa).
- sealing body forming process In the sealing body forming step, the resin sheet 11 is thermally cured to form the sealing body 15 (see FIG. 2B).
- the heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher.
- the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower.
- the heating time is preferably 10 minutes or more, more preferably 30 minutes or more.
- the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less.
- you may pressurize as needed Preferably it is 0.1 Mpa or more, More preferably, it is 0.5 Mpa or more.
- the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.
- a substrate mounting step can be performed in which rewiring and bumps are formed on the electronic device package 18 and mounted on a separate substrate (not shown).
- a known apparatus such as a flip chip bonder or a die bonder can be used.
- Epoxy resin 1 YSLV-80XY manufactured by Nippon Steel Chemical Co., Ltd. (bisphenol F type epoxy resin, epkin equivalent 200 g / eq. Softening point 80 ° C.)
- Epoxy resin 2 EPPN-501HY (triphenylmethane type epoxy resin) manufactured by Nippon Kayaku Co., Ltd.
- Epoxy resin 3 YL980 (bisphenol A type epoxy resin) manufactured by Mitsubishi Chemical Corporation Phenol resin 1: MEH-7851-SS manufactured by Meiwa Kasei Co., Ltd.
- Phenol resin 2 ND564 manufactured by Showa Polymer Co., Ltd.
- Thermoplastic resin 1 SIBSTER 072T (styrene-isobutylene-styrene block copolymer) manufactured by Kaneka Corporation
- Thermoplastic resin 2 SG-P3 manufactured by Nagase ChemteX Corporation
- Inorganic filler FB-9454FC manufactured by Denki Kagaku Kogyo Co., Ltd.
- Silane coupling agent KBM-403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd. Carbon black: # 20 manufactured by Mitsubishi Chemical Flame retardant: FP-100 manufactured by Fushimi Pharmaceutical (phosphazene flame retardant: compound represented by formula (4)) (In the formula, m represents an integer of 3 to 4.)
- Curing accelerator 1 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Kogyo Co., Ltd.
- Curing accelerator 2 TPP-MK (tetraphenylphosphonium tetra-p-tolylborate) manufactured by Hokuko Chemical Co., Ltd.
- Examples 1 to 3 Each component was blended according to the blending ratio shown in Table 1, and melt-kneaded under a reduced pressure condition (0.01 kg / cm 2 ) at 60 to 120 ° C. for 10 minutes using a biaxial kneader to prepare a kneaded product. Next, the obtained kneaded material was formed into a sheet shape by a flat plate pressing method, and a resin sheet having a thickness shown in Table 1 was produced. A separator was attached to the obtained resin sheet.
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Abstract
Description
150℃で1時間硬化させた際に発生するガス量は、実施例に記載の方法で測定できる。
150℃で1時間、樹脂シート11を硬化して得られた硬化物の1%重量減少温度は、実施例に記載の方法で測定できる。
150℃で1時間樹脂シート11を硬化して得られた硬化物を、40℃から260℃まで昇温速度10℃/分で昇温し、次いで260℃で1分間加熱した際に発生するガス量は、実施例に記載の方法で測定できる。
なお、平均粒径は、例えば、母集団から任意に抽出される試料を用い、レーザー回折散乱式粒度分布測定装置を用いて測定することにより導き出すことができる。
シリカは通常、比重2.2g/cm3であるので、シリカの含有量(重量%)の好適範囲は例えば以下のとおりである。
すなわち、樹脂シート11中のシリカの含有量は、81重量%以上が好ましく、84重量%以上がより好ましい。樹脂シート11中のシリカの含有量は、94重量%以下が好ましく、91重量%以下がより好ましい。
すなわち、樹脂シート11中のアルミナの含有量は、88重量%以上が好ましく、90重量%以上がより好ましい。樹脂シート11中のアルミナの含有量は、97重量%以下が好ましく、95重量%以下がより好ましい。
(式中、R1及びR2は、同一若しくは異なって、アルコキシ基、フェノキシ基、アミノ基、水酸基、アリル基又はこれらの基からなる群より選択される少なくとも1種の基を有する1価の有機基を表す。xは3~25の整数を表す。)
(式中、R3及びR5は、同一若しくは異なって、アルコキシ基、フェノキシ基、アミノ基、水酸基、アリル基又はこれらの基からなる群より選択される少なくとも1種の基を有する1価の有機基を表す。R4は、アルコキシ基、フェノキシ基、アミノ基、水酸基及びアリル基からなる群より選択される少なくとも1種の基を有する2価の有機基を表す。yは3~25の整数を表す。zは3~25の整数を表す。)
(式中、R11は、水素、水酸基、アルキル基、アルコキシ基、グリシジル基又はこれらの基からなる群より選択される少なくとも1種の基を有する1価の有機基を表す。)
図2A~2Cはそれぞれ、本発明の一実施形態に係る電子デバイスパッケージの製造方法の一工程を模式的に示す図である。本実施形態では、プリント配線基板12上に搭載されたSAWフィルタ13を樹脂シート11により中空封止して電子デバイスパッケージを作製する。
SAWフィルタ搭載基板準備工程では、複数のSAWフィルタ13が搭載されたプリント配線基板12を準備する(図2A参照)。SAWフィルタ13は、所定の櫛形電極が形成された圧電結晶を公知の方法でダイシングして個片化することにより形成できる。SAWフィルタ13のプリント配線基板12への搭載には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。SAWフィルタ13とプリント配線基板12とはバンプなどの突起電極13aを介して電気的に接続されている。また、SAWフィルタ13とプリント配線基板12との間は、SAWフィルタ表面での表面弾性波の伝播を阻害しないように中空部分14を維持するようになっている。SAWフィルタ13とプリント配線基板12との間の距離は適宜設定でき、一般的には15~50μm程度である。
封止工程では、SAWフィルタ13を覆うようにプリント配線基板12へ樹脂シート11を積層し、SAWフィルタ13を樹脂シート11で樹脂封止する(図2B参照)。樹脂シート11は、SAWフィルタ13及びそれに付随する要素を外部環境から保護するための封止樹脂として機能する。
封止体形成工程では、樹脂シート11を熱硬化処理して封止体15を形成する(図2B参照)。
続いて、封止体15のダイシングを行ってもよい(図2C参照)。これにより、SAWフィルタ13単位での電子デバイスパッケージ18を得ることができる。
必要に応じて、電子デバイスパッケージ18に対して再配線及びバンプを形成し、これを別途の基板(図示せず)に実装する基板実装工程を行うことができる。電子デバイスパッケージ18の基板への実装には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。
エポキシ樹脂1:新日鐵化学(株)製のYSLV-80XY(ビスフェノールF型エポキシ樹脂、エポキン当量200g/eq.軟化点80℃)
エポキシ樹脂2:日本化薬(株)製のEPPN-501HY(トリフェニルメタン型エポキシ樹脂)
エポキシ樹脂3:三菱化学(株)製のYL980(ビスフェノールA型エポキシ樹脂)
フェノール樹脂1:明和化成社製のMEH-7851-SS(ビフェニルアラルキル骨格を有するフェノール樹脂、水酸基当量203g/eq.、軟化点67℃)
フェノール樹脂2:昭和高分子(株)製のND564
熱可塑性樹脂1:カネカ社製のSIBSTER 072T(スチレン-イソブチレン-スチレンブロック共重合体)
熱可塑性樹脂2:ナガセケムテックス(株)製のSG-P3
無機充填剤:電気化学工業社製のFB-9454FC(溶融球状シリカ、平均粒子径20μm)
シランカップリング剤:信越化学社製のKBM-403(3-グリシドキシプロピルトリメトキシシラン)
カーボンブラック:三菱化学社製の#20
難燃剤:伏見製薬所製のFP-100(ホスファゼン系難燃剤:式(4)で表される化
合物)
(式中、mは3~4の整数を表す。)
硬化促進剤1:四国化成工業社製の2PHZ-PW(2-フェニル-4,5-ジヒドロキシメチルイミダゾール)
硬化促進剤2:北興化学工業社製のTPP-MK(テトラフェニルホスホニウムテトラ-p-トリルボレート)
表1に記載の配合比に従い、各成分を配合し、2軸混練機により60~120℃、10分間、減圧条件下(0.01kg/cm2)で溶融混練し、混練物を調製した。次いで、得られた混練物を、平板プレス法により、シート状に形成して、表1に示す厚さの樹脂シートを作製した。得られた樹脂シートに、セパレーターを貼り付けた。
未硬化の樹脂シートから、1cm×1cm×厚さ200μmのサンプルを切り取り、サンプルに付いているセパレーターを剥がした。サンプルをバイアル瓶に入れ秤量した。その後、ヘッドスペースサンプラー(HSS)で150℃、1時間の条件でサンプルを加熱した。加熱状態のガス1mlをAgilen Technology社製6890GC-MSに注入しアウトガス量を測定した。
未硬化の樹脂シートからセパレーターを剥がした後、樹脂シートを150℃で1時間加熱して硬化させた。硬化物から約8mgのサンプルを切り取った。エスアイアイ・ナノテクノロジー社製TG/DTA220にて室温~500℃まで10℃/minでAir中ガス流量200mg/minにてサンプルを加熱し、重量分析した。
未硬化の樹脂シートから、1cm×1cm×厚さ200μmのサンプルを切り取り、サンプルに付いているセパレーターを剥がした。サンプルを150℃で1時間加熱して硬化させた。硬化物をバイアル瓶に入れ秤量した。その後、ヘッドスペースサンプラー(HSS)で硬化物を加熱した(加熱条件:40℃から260℃まで昇温速度10℃/分で昇温した後、260℃で1分間保持した)。加熱状態のガス1mlをAgilen Technology社製6890GC-MSに注入しアウトガス量を測定した。
表1に記載の配合比に従い、各成分を配合し、これに各成分の総量と同量のメチルエチルケトンを添加して、ワニスを調製した。得られたワニスを、コンマコ―タ-により、厚み50μmのポリエステルフィルムA(三菱化学ポリエステル社製、MRF-50)の剥離処理面上に、乾燥後の厚みが50μmとなるように塗工し、乾燥させた。次いで、厚み38μmのポリエステルフィルムB(三菱化学ポリエステル社製、MRF-38)の剥離処理面を、乾燥後のワニス上に張り合わせて、薄膜樹脂シートを調製した。
その後、ポリエステルフィルムAおよびポリエステルフィルムBを適宜剥離しながら、ロールラミネ―タ―により、薄膜樹脂シートを4枚積層することにより、厚み200μmの樹脂シートを調製した。
11a 支持体
13 SAWフィルタ
15 封止体
18 電子デバイスパッケージ
Claims (4)
- 厚みが100~2000μmであり、
150℃で1時間硬化させた際に発生するガス量が500ppm以下である電子デバイス封止用樹脂シート。 - 150℃で1時間硬化して得られた硬化物の1%重量減少温度が260℃以上である請求項1に記載の電子デバイス封止用樹脂シート。
- 150℃で1時間硬化して得られた硬化物を、
40℃から260℃まで昇温速度10℃/分で昇温し、次いで260℃で1分間加熱した際に発生するガス量が500ppm以下である請求項1又は2に記載の電子デバイス封止用樹脂シート。 - 1又は複数の電子デバイスを覆うように請求項1~3のいずれかに記載の電子デバイス封止用樹脂シートを前記電子デバイス上に積層する積層工程、及び
前記電子デバイス封止用樹脂シートを硬化させて封止体を形成する封止体形成工程を含む電子デバイスパッケージの製造方法。
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