WO2014155888A1 - 磁気センサ装置 - Google Patents
磁気センサ装置 Download PDFInfo
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- WO2014155888A1 WO2014155888A1 PCT/JP2013/084916 JP2013084916W WO2014155888A1 WO 2014155888 A1 WO2014155888 A1 WO 2014155888A1 JP 2013084916 W JP2013084916 W JP 2013084916W WO 2014155888 A1 WO2014155888 A1 WO 2014155888A1
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- magnetic sensor
- land
- semiconductor device
- double
- magnet
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
- G01D5/145—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices influenced by the relative movement between the Hall device and magnetic fields
Definitions
- the present invention relates to a magnetic sensor device in which a magnet and a magnetic sensor are arranged to face each other.
- a magnet provided on the rotating body side and a magnetic sensor provided on the fixed body side face each other, and a signal output from the magnetic sensor as the magnet rotates.
- the signal processing circuit detects the rotational angle position, rotational speed, etc. of the rotating body. At that time, if an induced voltage is generated due to a magnetic flux change in the wiring output from the magnetic sensor to the signal processing circuit, the detection accuracy is lowered.
- a configuration has been proposed in which a flexible wire conducting wire connecting a magnetic sensor made of a Hall element and a signal processing circuit is arranged in the vicinity of the rotation center axis of the magnet (see Patent Document 1).
- a configuration has been proposed in which a wiring pattern for connecting a magnetic sensor composed of a Hall element and a signal processing circuit is arranged concentrically around the rotation center axis of the magnet (see Patent Document 2).
- an object of the present invention is to reduce the influence of inductive noise generated in the transmission path of the output from the magnetic sensor without securing a large space around the magnet. It is to provide a sensor device.
- a magnetic sensor device includes a magnet provided on the rotating body side and provided with an N pole and an S pole around the rotation center axis, and a feeling of facing the magnet on the fixed body side.
- the magnetic sensor and the semiconductor device are arranged at positions where at least a part thereof overlaps in the thickness direction of the double-sided board, and the magnetic sensor and the semiconductor device are arranged on the double-sided board. It is electrically connected to at least one of the magnetic sensor and the semiconductor device through a plurality of through holes formed at positions overlapping in the thickness direction of the double-sided substrate. That.
- a double-sided substrate having a magnetic sensor mounted on one side and a semiconductor device mounted on the other side is used.
- the magnetic sensor and the semiconductor device are electrically connected through a through-hole in the double-sided substrate. It is connected. For this reason, it is not necessary to secure a large space around the magnet.
- the magnetic sensor and the semiconductor device are arranged at a position where at least a part thereof overlaps in the thickness direction of the double-sided board, and the through hole is formed at a position where it overlaps at least one of the magnetic sensor and the semiconductor device. ing. Accordingly, since the transmission path of the output from the magnetic sensor is short, the induction noise generated in the transmission path of the output from the magnetic sensor is small, and the influence of the induction noise can be mitigated.
- the magnetic sensor may be provided on the rotation center axis of the magnet, and the double-sided board may employ a configuration in which the thickness direction is arranged toward the rotation center axis of the magnet. it can. According to such a configuration, the amount of inductive noise generated in the transmission path of the output from the magnetic sensor is small because the loop of the wiring formed on the double-sided substrate has a small amount of linkage with the magnetic flux.
- the center of the magnetic sensor and the center of the semiconductor device are located on the rotation center axis. According to such a configuration, the transmission path of the output from the magnetic sensor can be arranged in the vicinity of the rotation center axis, so that induction noise can be reduced.
- the plurality of through holes are formed at positions overlapping both the magnetic sensor and the semiconductor device in the thickness direction of the double-sided substrate. According to this configuration, since the transmission path of the output from the magnetic sensor is short, the induction noise generated in the transmission path of the output from the magnetic sensor is small, and the influence of the induction noise can be mitigated.
- the first magnetic sensor for the magnetic sensor In the direction in which an imaginary line connecting the second land for magnetic sensor, which is electrically connected to the second output terminal paired with the first output terminal, extends on the other surface side, the first magnetic sensor for the magnetic sensor.
- the direction in which the second land for semiconductor device electrically connected to the second land for magnetic sensor is located on the other surface side with respect to the first land for semiconductor device electrically connected to the land is the magnetic sensitivity. It is preferable that the direction opposite to the direction in which the second land for magnetic sensor is located with respect to the first land for sensor.
- the direction of the loop from the magnetic sensor to the semiconductor device can be reversed in the middle only by changing the configuration of the circuit board. Therefore, the polarity of the induced voltage can be reversed in the middle to cancel each other, so that the influence of the induced noise can be mitigated.
- “pairing” in the “second output terminal paired with the first output terminal” refers to the signal output from the first output terminal and the signal output from the second output terminal. This means that one signal is generated. For example, a relationship between a first output terminal that outputs a + A phase signal and a second output terminal that outputs a -A phase signal, and a first output terminal that outputs a + B phase signal. It means the relationship between one output terminal and a second output terminal that outputs a -B phase signal.
- a magnetic sensor side first wiring between the magnetic sensor side chip on which the magnetic film is formed and the first output terminal, the magnetic sensor side chip, and the second.
- the third induced voltage generated when the amplifier-side second wiring between the second input terminal and the second input terminal electrically connected to the child is linked to the magnetic flux of the magnet is any one of the induced voltage and the other two It is preferably formed so as to cancel the induced voltage. According to such a configuration, the induced voltages cancel each other, so that the influence of induced noise can be reduced.
- a structure in which at least one virtual line of the connecting virtual line and the virtual line connecting the first land for the magnetic sensor and the second land for the magnetic sensor extends in parallel, or the magnetic sensor A virtual line connecting the first through hole and the second through hole to a virtual line connecting the first land for sensor and the second land for magnetic sensor, and the first land for semiconductor device and the It is preferable that at least one of the imaginary lines connecting the second lands for semiconductor devices has a structure extending in parallel. According to this configuration, the phases of at least two of the first induced voltage, the second induced voltage, and the third induced voltage can be matched, which is suitable for canceling the induced voltages with each other.
- the magnetic sensor may employ a configuration that outputs a two-phase signal having a phase difference of 90 ° as the magnet rotates.
- a double-sided substrate having a magnetic sensor mounted on one side and a semiconductor device mounted on the other side is used.
- the magnetic sensor and the semiconductor device are electrically connected through a through-hole in the double-sided substrate. It is connected. For this reason, it is not necessary to secure a large space around the magnet.
- the magnetic sensor and the semiconductor device are arranged at a position where at least a part thereof overlaps in the thickness direction of the double-sided board, and the through hole is formed at a position where it overlaps at least one of the magnetic sensor and the semiconductor device. ing. Accordingly, since the transmission path of the output from the magnetic sensor is short, the induction noise generated in the transmission path of the output from the magnetic sensor is small, and the influence of the induction noise can be mitigated.
- Magnetic sensor device 2 Rotating body 4 Magnetic sensor (sensor IC) 5.
- Double-sided substrate 9 ⁇ ⁇ Semiconductor device (Amplifier IC) 40 ⁇ ⁇ Chip (magnetic sensor side chip) 41 to 44... Magnetic sensitive film 45... Element substrate 47... Magnetic sensor side wiring 47 (+ A) between the magnetic sensor element substrate (chip) and output terminal.
- FIG. 1 is an explanatory diagram showing a configuration of a magnetic sensor device 10 (rotary encoder) to which the present invention is applied.
- FIG. 2 is an explanatory diagram showing an electrical configuration of the magnetic sensor device to which the present invention is applied.
- FIG. 3 is an explanatory diagram showing the detection principle of the magnetic sensor device 10 to which the present invention is applied.
- FIGS. 3 (a), (b), (c), and (d) are diagrams of a magnetosensitive film for A phase.
- An explanatory diagram showing an electrical connection structure an explanatory diagram showing an electrical connection structure of a B-phase magnetosensitive film, an explanatory diagram of a signal output from the magnetosensitive sensor 4, and an angle between the signal and the rotating body 2 It is explanatory drawing which shows the relationship with a position (electrical angle).
- a sensor device 10 shown in FIG. 1 is a device that magnetically detects rotation around an axis of a rotating body 2 (around a rotation center axis L) relative to a fixed body (not shown), and the fixed body is a frame of a motor device.
- the rotating body 2 is used in a state where it is connected to a rotation output shaft or the like of the motor device.
- a magnet 20 is held that directs the magnetized surface 21 in which the N pole and the S pole are magnetized one by one in the circumferential direction to one side in the rotation center axis L direction. Rotates about the rotation center axis L integrally with the rotating body 2.
- a magnetic sensor 4 that faces the magnetized surface 21 of the magnet 20 on one side in the direction of the rotation center axis L, and a magnetic sensor 4
- An amplifier unit 90 (amplifier unit 90 (+ A), amplifier unit 90 ( ⁇ A), amplifier unit 90 (+ B), amplifier unit 90 ( ⁇ B)) for amplifying the output is provided in the chip 97 (amplifier side chip).
- a semiconductor device 9 (amplifier IC) is provided.
- the output from the amplifier unit 90 is A / D converted for the semiconductor device 9.
- a signal processing unit 99 that detects the rotational angle position, rotational speed, and the like of the rotating body 2 based on the signal after A / D conversion is provided.
- the signal processing unit 99 may be built in the semiconductor device 9.
- the magnetic sensor device 10 includes a first hall element 61 and a second hall element 62 located at a position that is shifted by 90 ° in the circumferential direction with respect to the first hall element 61 at a position facing the magnet 20.
- the amplifier unit 95 for the first Hall element 61 and the amplifier unit 96 for the second Hall element 62 are provided inside the semiconductor device 9 or outside the semiconductor device 9.
- the magnetic sensor 4 is configured as a sensor IC, and a two-phase sensor having a phase difference of 90 ° with respect to the phases of the element substrate 45 and the magnet 20 in the chip 40 (magnetic sensor side chip).
- the magnetoresistive element includes a magnetic film (A phase (SIN) magnetic sensitive film and B phase (COS) magnetic sensitive film).
- the A phase magnetosensitive film includes a + A phase (SIN +) magnetosensitive film 43 that detects movement of the rotating body 2 with a phase difference of 180 °, and a ⁇ A phase (SIN ⁇ ) magnetic sensor.
- the B-phase magnetosensitive film includes a + B-phase (COS +) magnetosensitive film 44 that detects movement of the rotating body 2 with a phase difference of 180 °, and a ⁇ B-phase (COS ⁇ ). ) Magnetosensitive film 42.
- COS + + B-phase
- COS ⁇ ⁇ B-phase
- the + A phase magnetosensitive film 43 and the -A phase magnetosensitive film 41 constitute the bridge circuit shown in FIG. 3A, one end of which is connected to the power supply terminal 48 (Vcc) and the other end is connected to the ground. It is connected to the terminal 48 (GND).
- An output terminal 48 (+ A) from which the + A phase is output is provided at the midpoint position of the + A phase magnetosensitive film 43, and the ⁇ A phase is output at the midpoint position of the ⁇ A phase magnetosensitive film 41.
- the output terminal 48 (-A) is provided.
- the + B phase magnetosensitive film 44 and the ⁇ B phase magnetosensitive film 42 also constitute the bridge circuit shown in FIG.
- An output terminal 48 (+ B) from which the + B phase is output is provided at the midpoint position of the + B phase magnetosensitive film 44, and the ⁇ B phase is output at the midpoint position of the ⁇ B phase magnetosensitive film 42.
- the output terminal 48 (-B) is provided.
- the magnetic sensor 4 having such a configuration is disposed on the rotation center axis L of the magnet 20 and faces the magnetization boundary portion of the magnet 20 in the rotation axis direction L. For this reason, the magnetic sensitive films 41 to 44 of the magnetic sensitive sensor 4 are rotated so that the direction of the magnetic sensitive films 41 to 44 changes in the in-plane direction of the magnetized surface 21 with a magnetic field intensity equal to or higher than the saturation sensitivity region of the resistance values of the magnetic sensitive films 41 to 44.
- a magnetic field can be detected. That is, a rotating magnetic field whose direction in the in-plane direction changes with a magnetic field intensity equal to or higher than the saturation sensitivity region of the resistance value of each of the magnetic sensitive films 41 to 44 is generated at the magnetization boundary line portion.
- the saturation sensitivity region generally refers to a region other than the region in which the resistance value change amount k can be approximately expressed by the magnetic field strength H and the expression “k ⁇ H 2 ”.
- the principle of detecting the direction of the rotating magnetic field (rotation of the magnetic vector) with a magnetic field strength higher than the saturation sensitivity region is that a magnetic field strength that saturates the resistance value is applied while the magnetic sensitive films 41 to 44 are energized.
- a signal processing unit 99 that performs signal processing for performing interpolation processing and various arithmetic processing on the sine wave signals sin and cos output from the magnetic sensor 4 is provided. 4. Based on the outputs from the first Hall element 61 and the second Hall element 62, the rotational angle position of the rotating body 2 with respect to the fixed body is obtained.
- the sine wave signals sin and cos shown in FIG. 3C are output for two cycles from the magnetic sensor 4 (magnetoresistance element).
- the amplifier unit 90 amplifier units 90 (+ A), 90 ( ⁇ A), 90 (+ B), 90 ( ⁇ B)
- the first Hall element 61 and the second Hall element 62 are arranged at a position shifted by 90 ° from the center of the magnet 20. For this reason, it can be understood from the combination of the outputs of the first Hall element 61 and the second Hall element 62 which section of the sine wave signal sin or cos the current position is located. Therefore, the rotary encoder generates absolute angular position information of the rotating body 2 based on the detection result of the magnetic sensor 4, the detection result of the first Hall element 61, and the detection result of the second Hall element 62. The absolute operation can be performed.
- FIG. 4 is an explanatory diagram of a signal path from the magnetic sensor 4 to the amplifier unit 90 in the magnetic sensor device 10 to which the present invention is applied.
- FIGS. 4 (a) and 4 (b) show the double-sided board 5 (circuit board).
- FIG. 6 is an explanatory view showing a mounting structure of the magnetic sensor 4 and the semiconductor device 9 and a wiring pattern of a double-sided substrate 5 (circuit board).
- FIG. 4B shows only the wiring pattern related to the present invention among the wiring patterns.
- the wiring pattern formed on one surface 501 of the double-sided substrate 5 is indicated by a solid line, and the wiring pattern formed on the other surface 502 of the double-sided substrate 5 is indicated by a one-dot chain line.
- the magnetic sensor 4 is indicated by a dotted line, and the semiconductor device 9 is indicated by a two-dot chain line.
- the magnetic sensor 4 includes a chip 40 and a plurality of output terminals 48 (+ A) electrically connected to the chip 40.
- the magnetic sensor side wirings 47 (+ A), 47 ( ⁇ A), 47 (+ B), and 47 ( ⁇ B) are electrically connected.
- the “first output terminal”, “second output terminal”, “magnetic sensor side first wiring”, and “magnetic sensor side second wiring” in the present invention are as follows.
- First output terminal of magnetic sensor 4 for A phase output terminal 48 (+ A)
- Second output terminal of magnetic sensor 4 output terminal 48 ( ⁇ A)
- Magnetic sensor side first wiring Magnetic sensor side wiring 47 (+ A)
- Magnetic sensor side second wiring Magnetic sensor side wiring 47 (-A)
- First output terminal of magnetic sensor 4 for B phase output terminal 48 (+ B)
- Second output terminal of magnetic sensor 4 output terminal 48 ( ⁇ B)
- Magnetic sensor side first wiring Magnetic sensor side wiring 47 (+ B)
- Magnetic sensor side second wiring Magnetic sensor side wiring 47 (-B)
- the semiconductor device 9 is electrically connected to the chip 97 including the amplifier unit 90 (amplifier units 90 (+ A), 90 ( ⁇ A), 90 (+ B), and 90 ( ⁇ B)).
- a plurality of input terminals 98 (+ A), 98 ( ⁇ A), 98 (+ B), 98 ( ⁇ B), and a chip 97 and input terminals 98 (+ A), 98 ( ⁇ A), 98 ( + B) and 98 ( ⁇ B) are electrically connected by amplifier side wirings 93 (+ A), 93 ( ⁇ A), 93 (+ B), and 93 ( ⁇ B).
- First input terminal of semiconductor device 9 for phase A input terminal 98 (+ A)
- Second input terminal of semiconductor device 9 input terminal 98 ( ⁇ A)
- Amplifier side first wiring Amplifier side wiring 93 (+ A)
- Amplifier side second wiring Amplifier side wiring 93 (-A)
- First input terminal of semiconductor device 9 for B phase input terminal 98 (+ B)
- Second input terminal of semiconductor device 9 input terminal 98 ( ⁇ B)
- Amplifier side first wiring Amplifier side wiring 93 (+ B)
- Amplifier side second wiring Amplifier side wiring 93 (-B)
- the double-sided substrate 5 is used to electrically connect the magnetic sensor 4 and the semiconductor device 9. Specifically, the magnetic sensor 4 is mounted on one side 501 side of the double-sided substrate 5, and the semiconductor device 9 is mounted on the other side 502 side.
- the double-sided substrate 5 has a thickness direction (indicated by an arrow T). (Direction shown) is directed in the direction of the rotation center axis L of the magnet 20.
- the magnetic sensor 4 and the semiconductor device 9 are arranged at positions where at least a part thereof overlaps in the thickness direction of the double-sided substrate 5.
- the magnetic sensor 4 and the semiconductor device 9 are arranged so as to be located inside an area in which one of them is projected in parallel in the thickness direction of the double-sided substrate 5.
- the planar size of the semiconductor device 9 is larger than the planar size of the magnetic sensor 4, and the magnetic sensor 4 is positioned inside the region obtained by projecting the semiconductor device 9 in parallel in the thickness direction of the double-sided substrate 5.
- the plane size of the magnetic sensor 4 may be larger than the plane size of the semiconductor device 9.
- the semiconductor device 9 has a region projected in parallel with the thickness direction of the double-sided substrate 5. It will be placed inside.
- the double-sided substrate 5 is disposed so that the center of the magnetic sensor 4 (chip 40) and the center of the semiconductor device 9 (chip 97) are located on the rotation center axis L.
- the magnetic sensor 4 and the semiconductor device 9 are electrically connected through a plurality of through holes 50 formed in the double-sided substrate 5.
- the plurality of through holes 50 are formed at positions that overlap at least one of the magnetic sensor 4 and the semiconductor device 9 in the thickness direction of the double-sided substrate 5.
- the plurality of through holes 50 are formed at positions where the magnetic sensor 4 and the double-sided substrate 5 overlap in the thickness direction. For this reason, the plurality of through holes 50 are formed at positions that overlap both the magnetic sensor 4 and the semiconductor device 9 in the thickness direction of the double-sided substrate 5.
- double-sided substrate 5 (Detailed configuration of double-sided substrate 5)
- lands and wirings of the double-sided substrate 5 will be described.
- a plurality of lands 51 on which the magnetic sensor 4 is mounted and a plurality of wirings 52 extending from the lands 51 are formed on one surface 501 of a substrate body such as a phenol substrate or a glass-epoxy substrate.
- a through hole 50 is formed at the tip of each of the plurality of wirings 52.
- the power supply terminal land 51 (Vcc) on which the power supply terminal 48 (Vcc) of the magnetic sensor 4 is mounted and the ground terminal 48 (GND) of the magnetic sensor 4 are mounted on the plurality of lands 51.
- a land 51 (GND) for the ground terminal is mounted on the plurality of lands 51.
- a land 51 (+ A) for + A phase on which the output terminal 48 (+ A) of the magnetic sensor 4 is mounted and an output terminal 48 ( ⁇ A) of the magnetic sensor 4 are mounted on the plurality of lands 51.
- the -A phase land 51 (-A), the + B phase land 51 (+ B) on which the output terminal 48 (+ B) of the magnetic sensor 4 is mounted, and the output terminal 48 (- -B phase land 51 (-B) on which B) is mounted is included.
- the plurality of wirings 52 are electrically connected to a power supply terminal wiring 52 (Vcc) to which a power supply terminal 48 (Vcc) of the magnetic sensor 4 is electrically connected and a ground terminal 48 (GND) of the magnetic sensor 4. And a ground terminal wiring 52 (GND) connected to the terminal.
- the plurality of wirings 52 are electrically connected to the output terminal 48 (+ A) of the magnetic sensor 4 for + A phase 52 (+ A) and the output terminal 48 ( ⁇ A) of the magnetic sensor 4.
- the plurality of through holes 50 include a through hole 50 (Vcc) for a power supply terminal to which a power supply terminal 48 (Vcc) of the magnetic sensor 4 is electrically connected, and a ground terminal 48 (GND) of the magnetic sensor 4. And a through hole 50 (GND) for a ground terminal to be electrically connected.
- the plurality of through holes 50 have a + A phase through hole 50 (+ A) to which an output terminal 48 (+ A) of the magnetic sensor 4 is electrically connected, and an output terminal 48 ( ⁇ ) of the magnetic sensor 4.
- a plurality of lands 53 on which the semiconductor device 9 is mounted and a plurality of wirings 54 extending from the lands 53 are formed on the other surface 502 of the double-sided substrate 5.
- the leading ends of the plurality of wirings 54 have a one-to-one relationship with each leading end portion of the plurality of wirings 52, and a through hole 50 is formed in the overlapping portion.
- the lands 53 include a + A phase land 53 (+ A) corresponding to the output terminal 48 (+ A) of the magnetic sensor 4 and a ⁇ A phase corresponding to the output terminal 48 ( ⁇ A) of the magnetic sensor 4.
- -B phase land 53 (-B) is included.
- an input terminal 98 (+ A) that is electrically connected to the amplifier unit 90 (+ A) of the semiconductor device 9 is mounted on the land 53 (+ A), and a semiconductor is mounted on the land 53 ( ⁇ A).
- An input terminal 98 ( ⁇ A) that is electrically connected to the amplifier unit 90 ( ⁇ A) of the device 9 is mounted, and the land 53 (+ B) is electrically connected to the amplifier unit 90 (+ B) of the semiconductor device 9.
- An input terminal 98 (+ B) that is electrically connected to the amplifier section 90 ( ⁇ B) of the semiconductor device 9 is mounted on the land 53 ( ⁇ B).
- the plurality of wirings 54 include a + A phase wiring 54 (+ A) corresponding to the output terminal 48 (+ A) of the magnetic sensor 4 and a ⁇ A phase corresponding to the output terminal 48 ( ⁇ A) of the magnetic sensor 4.
- -B phase wiring 54 (-B) is included.
- through holes 50 (+ A) are formed in the overlapping portions of the wiring 54 (+ A) and the wiring 52 (+ A), and the overlapping portion of the wiring 54 ( ⁇ A) and the wiring 52 ( ⁇ A).
- first land for magnetic sensor Land 51 (+ A)
- Second land for magnetic sensor Land 51 (-A)
- First B for Magnetic Sensor for Land B Land 51 (+ B)
- Second land for magnetic sensor Land 51 (-B)
- first through hole and the “second through hole” in the present invention correspond as follows.
- A-phase first through hole through hole 50 (+ A)
- Second through hole through hole 50 (-A)
- B phase first through hole through hole 50 (+ B)
- Second through hole through hole 50 (-B)
- first land for semiconductor device land 53 (+ A)
- Second land for semiconductor devices Land 53 (-A)
- B-phase semiconductor device first land land 53 (+ B)
- Second land for semiconductor devices Land 53 (-B)
- FIG. 5 is an explanatory diagram showing a configuration for effectively canceling the induced voltage in the sensor device 10 to which the present invention is applied.
- the first output terminal (the output terminal 48 (+ A)) of the magnetic sensor 4 is electrically connected on one surface 501 side.
- One land (land 51 (+ A)) and a second output terminal (output terminal 48 ( ⁇ A)) paired with the first output terminal (output terminal 48 (+ A)) in the magnetic sensor 4 on one surface 501 side Are connected to the second land for magnetic sensor (land 51 (-A)) in the direction in which the imaginary line extends, the first land for magnetic sensor (land 51 ( + A)) electrically connected to the second land for magnetic sensor (land 51 ( ⁇ A)) on the other surface 502 side with respect to the first land for semiconductor device (land 53 (+ A)) electrically connected to + A)) Second land for semiconductor devices (Land 53 (-A)) There direction position, the second land for magneto-sensitive sensor with respect to the first land for magneto-sensitive sensor (land 51 (+ A)) (land 51 (-A)) is opposite to the
- the + A phase wiring 54 (+ A) extends from the through hole 50 (+ A) to the side where the through hole 50 ( ⁇ A) is located, and ⁇
- the A-phase wiring 54 (-A) extends from the through hole 50 (-A) to the side where the through hole 50 (+ A) is located.
- the first land for the magnetic sensor of the magnetic sensor 4 (land 51 (+ A)) and the second land for the magnetic sensor of the magnetic sensor 4 (land 51 ( ⁇ A)) The direction in which the second land for semiconductor device (land 53 (-A)) is located with respect to the first land for semiconductor device (land 53 (+ A))
- the direction is opposite to the direction in which the second land for magnetic sensor (land 51 ( ⁇ A)) is located with respect to the first land for land (land 51 (+ A)). That is, the transmission path from the first land for the magnetic sensor (land 51 (+ A)) to the first land for the semiconductor device (land 53 (+ A)) and the second land for the magnetic sensor (land 51 ( ⁇ A)).
- the position is switched halfway.
- the wiring 47 (+ A) and 47 ( ⁇ A) between the chip 40 and the output terminals 48 (+ A) and 48 ( ⁇ A) in the magnetic sensor 4 are the magnetic flux of the magnet 20.
- a first induction voltage generated by linking is generated by linking the region surrounded by the cross-section of the double-sided substrate 5 with the magnetic flux of the magnet 20 by the through holes 50 (+ A) and 50 ( ⁇ A). 2 induction voltage, and wirings 93 (+ A) and 93 ( ⁇ A) between the chip 97 of the semiconductor device 9 and the input terminals 98 ( ⁇ A) and 98 ( ⁇ A) are linked to the magnetic flux of the magnet 20.
- One induced voltage and the other two induced voltages cancel out the third induced voltage generated by the above.
- the first through-hole (virtual line connecting the first land for a semiconductor device (land 53 (+ A)) and the second land for a semiconductor device (land 53 ( ⁇ A))
- the virtual lines connecting (Land 51 (-A)) at least two virtual lines extend in parallel. For this reason, since the phases of at least two of the first induced voltage, the second induced voltage, and the third induced voltage can be matched, the induced voltages are suitable for canceling each other.
- the third induced voltage is canceled by the first induced voltage and the second induced voltage.
- the first through hole (through hole 50) with respect to the virtual line connecting the first land for magnetic sensor (land 51 (+ A)) and the second land for magnetic sensor (land 51 (-A)). (+ A)) and the second through hole (through hole 50 (-A)), a first land for the magnetic sensor (land 51 (+ A)), and a second land for the magnetic sensor (land 51).
- At least one of the virtual lines connecting ( ⁇ A)) extends in parallel.
- a virtual line connecting the first land for semiconductor devices (land 53 (+ A)) and the second land for semiconductor devices (land 53 ( ⁇ A)) and the first through hole ( A virtual line connecting the through hole 50 (+ A)) and the second through hole (through hole 50 ( ⁇ A)) extends in parallel.
- a 3rd induced voltage can be reduced with a 2nd induced voltage.
- the virtual line connecting the first land for magnetic sensor (land 51 (+ A)) and the second land for magnetic sensor (land 51 ( ⁇ A)) extends in an oblique direction with respect to the virtual line. The inclination is 30 ° or less. Therefore, since the phase of the first induced voltage and the third induced voltage can be brought close to each other, the third induced voltage can be reduced by the first induced voltage.
- the cross-sectional area of each loop is proportional to the induced voltage, the interval between the through hole 50 (+ A) and the through hole 50 ( ⁇ A) is optimized.
- the area S4A defined by the chip 40 and the output terminals 48 (+ A) and ( ⁇ A) and the through holes 50 (+ A) and 50 ( ⁇ A) are surrounded by the cross section of the double-sided substrate 5.
- the area S9A divided by the chip 97 of the amplifier units 90 (+ A) and 90 ( ⁇ A) of the semiconductor device 9 and the input terminals 98 ( ⁇ A) and 98 ( ⁇ A) Is set equal to For this reason, the third induced voltage can be canceled by the first induced voltage and the second induced voltage by switching the transmission path in the middle. Therefore, generation of induction noise can be suppressed.
- the B phase has the same configuration as the A phase.
- the second output terminal (output terminal 48 ( ⁇ B)) paired with the first output terminal (output terminal 48 (+ B)) in the magnetic sensor 4 on one side 501 side is electrically connected.
- the second land for semiconductor device (land 53 (-B)) electrically connected to the second land for magnetic sensor (land 51 (-B)) on the other surface 502 side with respect to the first land for land (land 53 (+ B)).
- -B)) is located in the first land for the magnetic sensor.
- Land 51 (+ B)) second lands for magneto-sensitive sensor with respect to (a land 51 (-B)) is opposite to the direction in which the position.
- the + B phase wiring 54 (+ B) extends from the through hole 50 (+ B) to the side where the through hole 50 ( ⁇ B) is located, and ⁇
- the B-phase wiring 54 ( ⁇ B) extends from the through hole 50 ( ⁇ B) to the side where the through hole 50 (+ B) is located.
- the first land for the magnetic sensor of the magnetic sensor 4 (land 51 (+ B)) and the second land for the magnetic sensor of the magnetic sensor 4 (land 51 ( ⁇ B)) The direction in which the second land for semiconductor device (land 53 ( ⁇ B)) is located with respect to the first land for semiconductor device (land 53 (+ B))
- the direction is opposite to the direction in which the second land for magnetic sensor (land 51 ( ⁇ B)) is located with respect to the first land for land (land 51 (+ B)). That is, the transmission path from the first land for the magnetic sensor (land 51 (+ B)) to the first land for the semiconductor device (land 53 (+ B)) and the second land for the magnetic sensor (land 51 ( ⁇ B)).
- the position is switched halfway.
- the wiring 47 (+ B) and 47 ( ⁇ B) between the chip 40 and the output terminals 48 (+ B) and 48 ( ⁇ B) in the magnetic sensor 4 are the magnetic flux of the magnet 20.
- a first induction voltage generated by linking is generated by linking the region surrounded by the cross section of the double-sided substrate 5 with the magnetic flux of the magnet 20 by the through holes 50 (+ B) and 50 ( ⁇ B). 2 induction voltage, and the wirings 93 (+ B) and 93 ( ⁇ B) between the chip 97 of the semiconductor device 9 and the input terminals 98 ( ⁇ B) and 98 ( ⁇ B) are linked to the magnetic flux of the magnet 20.
- One induced voltage and the other two induced voltages cancel out the third induced voltage generated by the above.
- the first through-hole (virtual line connecting the first land for a semiconductor device (land 53 (+ B)) and the second land for a semiconductor device (land 53 ( ⁇ B))
- the virtual lines connecting (Land 51 ( ⁇ B)) at least two virtual lines extend in parallel. For this reason, since the phases of at least two of the first induced voltage, the second induced voltage, and the third induced voltage can be matched, the induced voltages are suitable for canceling each other.
- the third induced voltage is canceled by the first induced voltage and the second induced voltage.
- the first through hole (through hole 50) with respect to the imaginary line connecting the first land for magnetic sensor (land 51 (+ B)) and the second land for magnetic sensor (land 51 (-B)). (+ B)) and the second through hole (through hole 50 (-B)), a first line for the magnetic sensor (land 51 (+ B)) and a second land for the magnetic sensor (land 51). At least one of the virtual lines connecting ( ⁇ B)) extends in parallel.
- a virtual line connecting the first land for a semiconductor device (land 53 (+ B)) and the second land for a semiconductor device (land 53 ( ⁇ B)), and a first through hole ( A virtual line connecting the through hole 50 (+ B)) and the second through hole (through hole 50 ( ⁇ B)) extends in parallel.
- a 3rd induced voltage can be reduced with a 2nd induced voltage.
- a virtual line connecting the first land for magnetic sensor (land 51 (+ A)) and the second land for magnetic sensor (land 51 ( ⁇ A)) extends in parallel to the virtual line. is doing. Therefore, since the phase of the first induced voltage and the third induced voltage can be brought close to each other, the third induced voltage can be reduced by the first induced voltage.
- the cross-sectional area of each loop is proportional to the induced voltage, the interval between the through hole 50 (+ B) and the through hole 50 ( ⁇ B) is optimized.
- the area S4B defined by the chip 40 and the output terminals 48 (+ B) and ( ⁇ B) and the through holes 50 (+ B) and 50 ( ⁇ B) are surrounded by the cross section of the double-sided substrate 5.
- the area S9B divided by the amplifier 97 (+ B), 90 ( ⁇ B) chip 97 of the semiconductor device 9 and the input terminals 98 ( ⁇ B), 98 ( ⁇ B) Is set equal to For this reason, the third induced voltage can be canceled by the first induced voltage and the second induced voltage by switching the transmission path in the middle. Therefore, generation of induction noise can be suppressed.
- the magnetic sensor 4 is mounted on the one surface 501 side and the double-sided substrate 5 on which the semiconductor device 9 is mounted on the other surface 502 side.
- the semiconductor device 9 is electrically connected through the through hole 50 of the double-sided substrate 5. For this reason, it is not necessary to secure a large space around the magnet 20.
- the magnetic sensor 4 and the semiconductor device 9 are arranged at positions where at least a part thereof overlaps in the thickness direction of the double-sided substrate 5, and the through hole 50 is at least one of the magnetic sensor 4 and the semiconductor device 9. It is formed in the position which overlaps.
- the through hole 50 is formed at a position overlapping both the magnetic sensor 4 and the semiconductor device 9 in the thickness direction of the double-sided substrate 5. For this reason, since the transmission path from the magnetic sensor 4 to the semiconductor device 9 is short, the area linked to the magnetic flux is small. Therefore, the induced voltage generated in the transmission path of the output from the magnetic sensor 4 is low. Therefore, since the induced noise generated in the transmission path of the output from the magnetic sensor 4 is small, the influence of the induced noise on the detection result can be reduced.
- the magnetic sensor 4 is provided on the rotation center axis of the magnet 20, and the double-sided substrate 5 is arranged with the thickness direction directed toward the rotation center axis of the magnet 20. Therefore, the magnetic flux is formed along the double-sided substrate 5 as shown in FIG. Accordingly, since the loops of the wirings 52 and 54 formed on the double-sided substrate 5 are little linked to the magnetic flux, the induction noise generated in the transmission path of the output from the magnetic sensor 4 is small.
- the center of the magnetic sensor 4 and the center of the semiconductor device 9 are positioned on the rotation center axis L. For this reason, the transmission path from the magnetic sensor 4 to the semiconductor device 9 can be arranged in the vicinity of the rotation center axis L. Accordingly, since the temporal change of the magnetic flux interlinking with the transmission path is small, the induced voltage generated in the transmission path of the output from the magnetic sensor 4 is low. Therefore, induction noise can be reduced.
- the position of the transmission path from the magnetic sensor 4 to the semiconductor device 9 is switched between the + A phase and the ⁇ A phase, and the transmission path from the magnetic sensor 4 to the semiconductor device 9 is + B phase and ⁇
- the position has also changed with Phase B. Therefore, the direction of the loop from the magnetic sensor 4 to the semiconductor device 9 can be reversed only by changing the configuration of the circuit board 5. Therefore, the polarity of the induced voltage can be reversed in the middle to cancel each other, so that the influence of the induced noise can be mitigated.
- the magnetic sensor 4 is opposed to the magnet 20 in the direction of the rotation center axis L, but the magnetic sensor 4 is opposed to the outer peripheral surface or the outer peripheral surface of the ring-shaped magnet 20.
- the present invention may be applied to the apparatus 10.
- the transmission path from the first land for magnetic sensor (land 51 (+ A)) to the first land for semiconductor device (land 53 (+ A)) and the second land for magnetic sensor ( The position of the transmission path from the land 51 (-A) to the second land for semiconductor devices (land 53 (-A)) is switched on the other surface 502 of the double-sided substrate 5. For this reason, the third induced voltage is canceled by the first induced voltage and the second induced voltage.
- the transmission path from the first land for magnetic sensor (land 51 (+ A)) to the first land for semiconductor device (land 53 (+ A)) and the second land for magnetic sensor (land 51 ( The transmission path from -A)) to the second land for semiconductor devices (land 53 (-A)) may adopt a configuration in which the position is switched on one surface 501 of the double-sided substrate 5.
- the first induced voltage is canceled by the second induced voltage and the third induced voltage.
- a second through hole (through hole 50 (-A)) at least one set of virtual lines extends in parallel.
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Abstract
Description
2・・回転体
4・・感磁センサ(センサIC)
5・・両面基板
9・・半導体装置(アンプIC)
40・・チップ(感磁センサ側チップ)
41~44・・感磁膜
45・・素子基板
47・・感磁センサの素子基板(チップ)と出力端子との間の感磁センサ側配線
47(+A)・・感磁センサ側配線(感磁センサ側第1配線)
47(-A)・・感磁センサ側配線(感磁センサ側第2配線)
47(+B)・・感磁センサ側配線(感磁センサ側第1配線)
47(-B)・・感磁センサ側配線(感磁センサ側第2配線)
48・・感磁センサの出力端子
48(+A)・・出力端子(感磁センサの第1出力端子)
48(-A)・・出力端子(感磁センサの第2出力端子)
48(+B)・・出力端子(感磁センサの第1出力端子)
48(-B)・・出力端子(感磁センサの第2出力端子)
50・・スルーホール
50(+A)・・第1スルーホール
50(-A)・・第2スルーホール
50(+B)・・第1スルーホール
50(-B)・・第2スルーホール
51・・感磁センサ側のランド
51(+A)・・ランド(感磁センサ用第1ランド)
51(-A)・・ランド(感磁センサ用第2ランド)
51(+B)・・ランド(感磁センサ用第1ランド)
51(-B)・・ランド(感磁センサ用第2ランド)
52・・両面基板の配線
53・・半導体装置側のランド
53(+A)・・ランド(半導体装置用第1ランド)
53(-A)・・ランド(半導体装置用第2ランド)
53(+B)・・ランド(半導体装置用第1ランド)
53(-B)・・ランド(半導体装置用第2ランド)
54・・両面基板の配線
90・・アンプ部
93・・半導体装置のチップと入力端子との間のアンプ側配線
93(+A)・・アンプ側配線(アンプ側第1配線)
93(-A)・・アンプ側配線(アンプ側第2配線)
93(+B)・・アンプ側配線(アンプ側第1配線)
93(-B)・・アンプ側配線(アンプ側第2配線)
97・・半導体装置のチップ(アンプ側チップ)
98・・半導体装置の入力端子
98(+A)・・入力端子(半導体装置の第1入力端子)
98(-A)・・入力端子(半導体装置の第2入力端子)
98(+B)・・入力端子(半導体装置の第1入力端子)
98(-B)・・入力端子(半導体装置の第2入力端子)
501・・両面基板の一方面
502・・両面基板の他方面
R=R0-k×sin2θ
R0:無磁界中での抵抗値
k:抵抗値変化量(飽和感度領域以上のときは定数)
で示す関係があることを利用するものである。このような原理に基づいて回転磁界を検出すれば、角度θが変化すると抵抗値Rが正弦波に沿って変化するので、波形品質の高いA相出力およびB相出力を得ることができる。
図4は、本発明を適用した磁気センサ装置10における感磁センサ4からアンプ部90への信号経路の説明図であり、図4(a)、(b)は、両面基板5(回路基板)に対する感磁センサ4および半導体装置9の実装構造を示す説明図、および両面基板5(回路基板)の配線パターン等を示す説明図である。なお、図4(b)には配線パターンのうち、本発明に関する配線パターンのみを示してある。また、図4(b)では、両面基板5の一方面501に形成された配線パターンを実線で示し、両面基板5の他方面502に形成された配線パターンを一点鎖線で示してある。また、図4(b)では、感磁センサ4を点線で示し、半導体装置9を二点鎖線で示してある。
A相用
感磁センサ4の第1出力端子=出力端子48(+A)
感磁センサ4の第2出力端子=出力端子48(-A)
感磁センサ側第1配線=感磁センサ側配線47(+A)
感磁センサ側第2配線=感磁センサ側配線47(-A)
B相用
感磁センサ4の第1出力端子=出力端子48(+B)
感磁センサ4の第2出力端子=出力端子48(-B)
感磁センサ側第1配線=感磁センサ側配線47(+B)
感磁センサ側第2配線=感磁センサ側配線47(-B)
A相用
半導体装置9の第1入力端子=入力端子98(+A)
半導体装置9の第2入力端子=入力端子98(-A)
アンプ側第1配線=アンプ側配線93(+A)
アンプ側第2配線=アンプ側配線93(-A)
B相用
半導体装置9の第1入力端子=入力端子98(+B)
半導体装置9の第2入力端子=入力端子98(-B)
アンプ側第1配線=アンプ側配線93(+B)
アンプ側第2配線=アンプ側配線93(-B)
以下、図2および図4(a)、(b)を参照して、両面基板5のランドや配線等を説明する。両面基板5は、フェノール基板やガラス-エポキシ基板等の基板本体の一方面501に、感磁センサ4が実装される複数のランド51と、ランド51から延在する複数の配線52とが形成されており、複数の配線52の各々の先端部にスルーホール50が形成されている。
A相用
感磁センサ用第1ランド=ランド51(+A)
感磁センサ用第2ランド=ランド51(-A)
B相用
感磁センサ用第1ランド=ランド51(+B)
感磁センサ用第2ランド=ランド51(-B)
A相用
第1スルーホール=スルーホール50(+A)
第2スルーホール=スルーホール50(-A)
B相用
第1スルーホール=スルーホール50(+B)
第2スルーホール=スルーホール50(-B)
A相用
半導体装置用第1ランド=ランド53(+A)
半導体装置用第2ランド=ランド53(-A)
B相用
半導体装置用第1ランド=ランド53(+B)
半導体装置用第2ランド=ランド53(-B)
図5は、本発明を適用したセンサ装置10において誘導電圧を効果的に打ち消すための構成を示す説明図である。
また、B相に関しても、A相と同様な構成になっている。両面基板5において、一方面501側で感磁センサ4の第1出力端子(出力端子48(+B))が電気的に接続される感磁センサ用第1ランド(ランド51(+B))と、一方面501側で感磁センサ4において第1出力端子(出力端子48(+B))と対を成す第2出力端子(出力端子48(-B))が電気的に接続される感磁センサ用第2ランド(ランド51(-B))とを結ぶ仮想線が延在する方向において、他方面502側で感磁センサ用第1ランド(ランド51(+B))に電気的に接続する半導体装置用第1ランド(ランド53(+B))に対して他方面502側で感磁センサ用第2ランド(ランド51(-B))に電気的に接続する半導体装置用第2ランド(ランド53(-B))が位置する方向は、感磁センサ用第1ランド(ランド51(+B))に対して感磁センサ用第2ランド(ランド51(-B))が位置する方向と反対である。
以上説明したように、本形態のセンサ装置10では、一方面501側に感磁センサ4が実装され、他方面502側に半導体装置9が実装された両面基板5を用い、感磁センサ4と半導体装置9とは、両面基板5のスルーホール50を介して電気的に接続されている。このため、マグネット20の周辺に大きなスペースを確保しなくてよい。また、感磁センサ4と半導体装置9とは、少なくとも一部同士が両面基板5の厚さ方向において重なる位置に配置され、かつ、スルーホール50は、感磁センサ4および半導体装置9の少なくとも一方と重なる位置に形成されている。特に本形態において、スルーホール50は、感磁センサ4および半導体装置9の双方に両面基板5の厚さ方向で重なる位置に形成されている。このため、感磁センサ4から半導体装置9への伝送経路が短いため、磁束と鎖交する面積が狭い。従って、感磁センサ4からの出力の伝送経路で発生する誘導電圧が低い。それ故、感磁センサ4からの出力の伝送経路で発生する誘導ノイズが小さいので、検出結果への誘導ノイズの影響を緩和することができる。
上記実施の形態では、感磁センサ4がマグネット20に対して回転中心軸線L方向で対向していたが、リング状のマグネット20の外周面あるいは外周面に感磁センサ4が対向しているセンサ装置10に本発明を適用してもよい。
Claims (9)
- 回転体側に設けられ、回転中心軸線周りにN極およびS極が設けられたマグネットと、
固定体側で前記マグネットに対向する感磁センサと、
該感磁センサからの出力信号を増幅するアンプ部を備えた半導体装置と、
一方面側に前記感磁センサが実装され、他方面側に前記半導体装置が実装された両面基板と、
を有し、
前記感磁センサと前記半導体装置とは、少なくとも一部同士が前記両面基板の厚さ方向において重なる位置に配置され、
前記感磁センサと前記半導体装置とは、前記両面基板において前記感磁センサおよび前記半導体装置の少なくとも一方に前記両面基板の厚さ方向で重なる位置に形成された複数のスルーホールを介して電気的に接続されていることを特徴とする磁気センサ装置。 - 前記感磁センサは、前記マグネットの回転中心軸線上に設けられ、
前記両面基板は、厚さ方向を前記マグネットの回転中心軸線方向に向けて配置されていることを特徴とする請求項1に記載の磁気センサ装置。 - 前記感磁センサの中心、および前記半導体装置の中心が前記回転中心軸線上に位置することを特徴とする請求項2に記載の磁気センサ装置。
- 前記マグネットは、NS一極対に着磁されていることを特徴とする請求項2または3に記載の磁気センサ装置。
- 前記複数のスルーホールは、前記感磁センサおよび前記半導体装置の双方に前記両面基板の厚さ方向で重なる位置に形成されていることを特徴とする請求項2乃至4の何れか一項に記載の磁気センサ装置。
- 前記両面基板では、
前記一方面側で前記感磁センサの第1出力端子が電気的に接続される感磁センサ用第1ランドと、前記一方面側で前記感磁センサにおいて前記第1出力端子と対を成す第2出力端子が電気的に接続される感磁センサ用第2ランドとを結ぶ仮想線が延在する方向において、前記他方面側で前記感磁センサ用第1ランドに電気的に接続する半導体装置用第1ランドに対して前記他方面側で前記感磁センサ用第2ランドに電気的に接続する半導体装置用第2ランドが位置する方向は、前記感磁センサ用第1ランドに対して前記感磁センサ用第2ランドが位置する方向と反対であることを特徴とする請求項2乃至5の何れか一項に記載の磁気センサ装置。 - 前記感磁センサにおいて、感磁膜が形成された感磁センサ側チップと前記第1出力端子との間の感磁センサ側第1配線および前記感磁センサ側チップと前記第2出力端子との間の感磁センサ側第2配線が前記マグネットの磁束と鎖交することにより発生する第1誘導電圧、
前記複数のスルーホールのうち、前記第1出力端子に対応する第1スルーホールおよび前記第2出力端子に対応する第2スルーホールによって前記両面基板の断面内で囲まれる領域と前記マグネットの磁束とが鎖交することにより発生する第2誘導電圧、
および前記半導体装置において、前記アンプ部が形成されたアンプ側チップと前記第1出力端子に電気的に接続する第1入力端子との間のアンプ側第1配線、および前記アンプ側チップと前記第2出力端子に電気的に接続する第2入力端子との間のアンプ側第2配線が前記マグネットの磁束と鎖交することにより発生する第3誘導電圧は、
いずれか1つの誘導電圧と他の2つの誘導電圧とが打ち消すように形成されていることを特徴とする請求項6に記載の磁気センサ装置。 - 前記回転中心軸線方向からみたとき、
前記半導体装置用第1ランドと前記半導体装置用第2ランドとを結ぶ仮想線に対して、前記第1スルーホールと前記第2スルーホールとを結ぶ仮想線、および前記感磁センサ用第1ランドと前記感磁センサ用第2ランドとを結ぶ仮想線のうちの少なくとも一方の仮想線が平行に延在している構造、
または、前記感磁センサ用第1ランドと前記感磁センサ用第2ランドとを結ぶ仮想線に対して、前記第1スルーホールと前記第2スルーホールとを結ぶ仮想線、および前記半導体装置用第1ランドと前記半導体装置用第2ランドとを結ぶ仮想線のうちの少なくとも一方の仮想線が平行に延在している構造を有していることを特徴とする請求項7に記載の磁気センサ装置。 - 前記感磁センサは、前記マグネットの回転に伴って、90°の位相差を有する2相の信号を出力することを特徴とする請求項1乃至8の何れか一項に記載の磁気センサ装置。
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CN201145583Y (zh) * | 2007-12-24 | 2008-11-05 | 孙成 | 磁性旋转编码器 |
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JPS62158307U (ja) * | 1986-03-31 | 1987-10-07 | ||
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JP2004022729A (ja) * | 2002-06-14 | 2004-01-22 | Matsushita Electric Ind Co Ltd | 実装基板及びその製造方法 |
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CN105606019A (zh) * | 2014-11-19 | 2016-05-25 | 日本电产三协株式会社 | 编码器及旋转角度位置计算方法 |
TWI663383B (zh) * | 2014-11-19 | 2019-06-21 | 日商日本電產三協股份有限公司 | Encoder and rotation angle position calculation method |
WO2017038849A1 (ja) * | 2015-09-04 | 2017-03-09 | 国立研究開発法人科学技術振興機構 | コネクタ基板、センサーシステム及びウェアラブルなセンサーシステム |
US10398377B2 (en) | 2015-09-04 | 2019-09-03 | Japan Science And Technology Agency | Connector substrate, sensor system, and wearable sensor system |
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KR102071753B1 (ko) | 2020-01-30 |
CN105051500B (zh) | 2017-06-09 |
JP2014194385A (ja) | 2014-10-09 |
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