WO2014132948A1 - サセプタ - Google Patents
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- WO2014132948A1 WO2014132948A1 PCT/JP2014/054459 JP2014054459W WO2014132948A1 WO 2014132948 A1 WO2014132948 A1 WO 2014132948A1 JP 2014054459 W JP2014054459 W JP 2014054459W WO 2014132948 A1 WO2014132948 A1 WO 2014132948A1
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- Prior art keywords
- gas
- susceptor
- wafer
- sub
- flow path
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
- C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Definitions
- the present invention relates to a susceptor used in a CVD apparatus for epitaxially growing a semiconductor material on a wafer and for mounting the wafer.
- the secondary gas used in the gas flow is mostly a caustic gas that reacts with graphite (carbon material).
- a secondary gas reacts by contact with graphite, and especially NH 3 or H 2 contained in the secondary gas easily reacts by contact with graphite.
- the composition of the secondary gas changes, which may adversely affect the quality of the semiconductor material.
- the surface of the susceptor is coated with SiC or TaC to suppress the reaction with graphite (carbon), but a countermeasure against caustic gas has been conventionally applied to the secondary gas flow path through which the secondary gas passes. There wasn't.
- FIG. 10 shows the film thickness of the SiC film in a straight hole having an inner diameter of 3 mm when the SiC film is formed with a thickness of 100 ⁇ m on the outer surface of the susceptor using the CVD method.
- the film thickness has already been halved in the vicinity of a depth of 3 mm, which is the same as the inner diameter, and in the conventional CVD method, the auxiliary gas channel is coated only in a small range near the inlet. It became clear that there was no.
- an object of the present invention is to provide a susceptor that can suppress adverse effects on the quality of a semiconductor material by suppressing the reaction of the secondary gas caused by the contact between the secondary gas and carbon.
- the present invention introduces a main gas for forming a semiconductor film and a sub-gas for floating and rotating the wafer, and rotates the wafer placed on the susceptor body.
- at least a part of the inner wall of the auxiliary gas flow path is formed separately from the susceptor body and made of a resistant material having low reactivity with the caustic gas.
- a protective member is provided.
- the reaction of the secondary gas caused by the contact of the secondary gas and the graphite in the secondary gas flow path through which the secondary gas passes is suppressed, thereby suppressing adverse effects on the quality of the semiconductor material.
- FIG. 2 is a cross-sectional view taken along line AA in FIG. 1.
- the top view which shows a groove.
- the schematic sectional drawing which shows the inside of a chamber. Sectional drawing which shows the modification of the susceptor main body of 1st Example. Sectional drawing which shows the modification of the susceptor main body of 1st Example. Sectional drawing which shows the modification of the susceptor main body of 1st Example. Sectional drawing which shows the modification of the susceptor main body of 1st Example. Sectional drawing which shows the modification of the susceptor main body of 1st Example. Sectional drawing which shows the modification of the susceptor main body of 1st Example.
- the graph which shows the relationship between the distance from the gas inlet in the straight hole with an internal diameter of 3 mm, and a SiC film thickness, when a SiC film is formed in the outer surface of a susceptor by CVD method.
- Sectional drawing of the susceptor main body of 2nd Example. A photograph showing a cross section near the auxiliary gas flow path. The principal part enlarged view of FIG.
- the present invention introduces a main gas for forming a semiconductor film and a sub-gas for floating and rotating the wafer, and rotates the wafer placed on the susceptor body while rotating the wafer on the wafer.
- a susceptor used for vapor phase epitaxial growth in which a semiconductor film is formed by a main gas, wherein a sub gas flow path for passing the sub gas is provided in the susceptor body, and the sub gas is a caustic highly reactive with carbon.
- At least a part of the inner wall of the auxiliary gas flow path is provided with a protective member made of a resistant material that is formed separately from the susceptor body and has low reactivity with the caustic gas. It is characterized by that.
- the protective member is made of a resistant material having low reactivity with caustic gas as in the above-described configuration, and the inner wall of at least a part of the auxiliary gas passage is covered by the protective member, the auxiliary gas passage When the secondary gas passes through, the secondary gas can be prevented from coming into contact with carbon and changing the composition of the secondary gas. Therefore, adverse effects on the quality of the semiconductor material can be suppressed. If the protective member is formed separately from the susceptor body, the protective force can be easily recovered by replacing the protective member.
- the protection member is preferably provided in the vicinity of the upstream end where the secondary gas flows in the secondary gas flow path.
- the protective member is preferably provided in the entire auxiliary gas flow path, but there may be a case where the protective member is not necessarily provided in the entire auxiliary gas flow path because of cost and convenience when forming the protective member. Even in such a case, the above-described effect can be sufficiently exerted if it is provided in the vicinity of the upstream end where the secondary gas flows. This is because the introduced secondary gas becomes a turbulent flow in the vicinity of the secondary gas introduction port, so that the reaction between carbon and caustic gas is particularly easy to proceed as compared with other portions.
- the above-mentioned resistant material is desirably at least one selected from the group consisting of SiC, TaC and BN.
- the present invention introduces a main gas for forming a semiconductor film and a sub-gas for floating and rotating the wafer, and rotates the wafer placed on the susceptor body while rotating the wafer.
- a susceptor used for vapor phase epitaxial growth in which a semiconductor film is formed by the main gas, and a sub gas flow path for circulating the sub gas is provided in the susceptor body, and the sub gas is reactive with carbon.
- a coating layer containing a high caustic gas and having a low reactivity with the caustic gas is formed on at least a part of the inner wall of the auxiliary gas flow path.
- the coating layer can be formed easily and at low cost even if the sub-gas channel is narrow and long.
- the sub-gas flow path is preferably applied to a pipe whose depth from the sub-gas inlet is larger than the inner diameter, and more preferably applied to a pipe whose depth from the sub-gas inlet is five times the inner diameter or more. preferable.
- the coating layer is preferably provided in the vicinity of the upstream end where the secondary gas flows in the secondary gas flow path. For the same reason as described above, the above-mentioned effect is sufficiently exhibited if it is provided in the vicinity of the upstream end where the secondary gas flows.
- an infiltration portion into which a substance of the same material as that of the covering layer is infiltrated is formed on the susceptor body side of the covering layer. Since the penetration part is formed, the adhesion of the coating layer is improved, and therefore the coating layer is difficult to peel from the susceptor body. In addition, even if some cracks, wear, etc. occur in the coating layer, the presence of the permeation portion can suppress corrosion of the susceptor body due to caustic gas.
- the covering layer is preferably made of at least one selected from the group consisting of SiC, TaC and BN.
- the secondary gas contains the same gas type as that contained in the main gas. If the gas type contains the same gas type as that contained in the main gas, the influence on the quality of the semiconductor material is further reduced when the sub gas comes into contact with the wafer.
- the caustic gas is desirably NH 3 gas and / or H 2 gas. However, it is not limited to these gases, and may be NF 3 , CF 4 , ClF 3 , O 2 , O 3 , F 2 gas or the like.
- the wafer is preferably placed on a wafer placement member. If it is the structure which mounts a wafer on a wafer mounting member, since the contact with a wafer and subgas can be suppressed, the influence on the quality of a semiconductor is reduced more.
- the present invention introduces a main gas for forming a semiconductor film and a sub-gas for floating and rotating the wafer, and rotates the wafer placed on the susceptor body while rotating the wafer.
- a sub gas flow path for circulating the sub gas is provided, and an inner surface of the sub gas flow path is made of a carbonaceous material.
- a step of volatilizing the solvent in the slurry, and a heat treatment to react the metal silicon and / or metal tantalum with carbon in the carbonaceous material and carbon in the resin component Characterized in that it and a step of producing silicon carbide and / or cover layer of tantalum carbide containing by.
- the first embodiment is an example in which a protective member formed separately from the susceptor body is provided on the inner wall of the sub gas flow path.
- a chamber 1 is installed in the reaction vessel housing.
- main gas gas containing caustic gas highly reactive with carbon
- main gas passage 2 gas containing caustic gas highly reactive with carbon
- susceptor 3 is disposed in the chamber 1, and the susceptor 3 is heated from below by a heater 4.
- the susceptor 3 has a susceptor body 7 as shown in FIGS. 1 and 2, and the susceptor body 7 is made of graphite. Further, on the upper surface of the susceptor body 7, a positioning member 5 and a wafer mounting member 6 positioned by being surrounded by the positioning member 5 are arranged. The upper surface of a wafer (not shown) placed on the wafer placement member 6 and the upper surface of the positioning member 5 are configured to be flush with each other.
- the susceptor body 7 is formed with a through hole (first sub-gas channel) 10 penetrating between the outer peripheral surface 7b and the inner peripheral surface 7a of the susceptor body 7.
- the diameter of the through hole 10 is 7 mm, and a protective member 11 made of SiC and covering the inner wall of the through hole 10 is fitted into the through hole 10. In this way, by covering the inner wall of the through hole 10 formed in the susceptor body 7 made of graphite with the protective member 11, the inner wall of the first auxiliary gas flow path 10 is protected, and the auxiliary gas (included in the main gas) is protected.
- the gas containing the same gas type as the gas type passes through the first secondary gas flow path 10, it is possible to prevent the graphite and the secondary gas from coming into contact with each other to change the composition of the secondary gas. Therefore, adverse effects on the quality of the semiconductor material can be suppressed.
- the protective member 11 has a straw shape, and the outer diameter is substantially the same as the inner diameter of the through hole 10 (diameter: 7 mm), the inner diameter is 3 mm, and the length is 200 mm. Further, a secondary gas introduction port 12 is formed at the tip 11a of the protective member 11 on the inner peripheral surface 7a side, and the outer shape of the tip 11a is tapered. The reason for this shape is to facilitate the insertion of the protective member 11 when the protective member 11 is inserted into the through hole 10 from the outer peripheral surface 7b of the susceptor body 7.
- a sealing member 13 that closes the through hole 10 is fitted in the through hole 10 on the other end 11 b side of the protective member 11, and is introduced from the auxiliary gas inlet 12 by the sealing member 13.
- the secondary gas can be prevented from being released to the outside through the through hole 10 of the outer peripheral surface 7b.
- the outer side surface 13 a of the sealing member 13 is flush with the outer peripheral surface 7 b of the susceptor body 7.
- a curved groove 15 is formed on the upper surface of the susceptor body 7, and the groove 15 and the through hole (first auxiliary gas flow path) 10 are formed. Are connected by a second auxiliary gas flow path 17.
- the second auxiliary gas flow path 17 is connected to the groove 15, and this connecting portion constitutes the auxiliary gas discharge port 16.
- the entire susceptor body 7 is coated with SiC using a CVD method.
- This coating can be formed, for example, by forming two or more layers of SiC films on the surface of the susceptor body 7 and purifying the outermost layer film of the SiC films using a halogen gas such as chlorine gas. If the main gas is introduced from above the chamber while the wafer is placed on the wafer placement member 6, epitaxial growth is performed on the wafer.
- the following method may be used. 5 to 9, the positioning member 5, the wafer mounting member 6, the groove 15 and the like are omitted for convenience of explanation, but their states are the same as those in FIG.
- the inner diameter of the through hole 10 in the vicinity of the auxiliary gas inlet 12 is set to an inner diameter of 7 mm by about 50 mm from the auxiliary gas inlet 12, and the others are set to an inner diameter of 3 mm and a length of 50 mm. It is also possible to insert a straw-shaped protective member 11 (thickness 2 mm) into only a portion having an inner diameter of 7 mm and cover the inner wall of the through-hole 10 only in the vicinity of the auxiliary gas inlet 12 for protection.
- 6 to 9 show an embodiment in which a secondary gas is introduced from a secondary gas source provided below the susceptor body 7 into the secondary gas flow path.
- 6 opens a through hole 10 for providing a protective member 11 in the horizontal direction of the susceptor body 7, and the straw-shaped protective member 11 is previously closed at the tip 11a side by a sealing wall 11c and opened downward.
- 11d is provided and inserted from the outer peripheral surface 7b side, and the secondary gas introduction port 12 and the opening 11d are communicated to ensure the circulation of the secondary gas.
- a sealing member 13 that closes the through hole 10 is inserted into the through hole 10 on the other end 11 b side of the protection member 11.
- a cylindrical protective member 11e is attached to the through hole 10 on the inner peripheral surface 7a side of the susceptor body 7 on the tip end 11a side, so that the inner periphery of the susceptor body 7 can be prevented from leaking sub-gas or intrusion of peripheral gas.
- the inner wall of the through hole 10 on the surface 7a side is configured to be protected. 7 is substantially the same as the configuration of FIG. 6, but is different in that the protective member 11 is provided only in a part of the through hole 10 as in the relationship between FIGS.
- FIG. 8 and 9 show another embodiment in which a protective member 11 is provided in the vicinity of the auxiliary gas inlet 12.
- the secondary gas When the secondary gas is introduced from below, the secondary gas that tries to go straight at the location where the flow of the secondary gas is changed from the vertical direction to the horizontal direction collides with the inner wall of the secondary gas flow path, and the reaction of graphite by the caustic gas is very high. Promoted. For this reason, a sufficient effect can be obtained by protecting only the colliding portion.
- the protective member 11 has a cap-like shape with an opening 11d provided below, and is further provided with an opening 11f toward the outside so that the secondary gas flows through the secondary gas flow path. is there.
- this protective member 11 By providing this protective member 11, it is possible to protect the inner wall above the auxiliary gas inlet 12, that is, the portion where the reaction of graphite with the caustic gas is most likely to occur.
- a through hole 10a into which the protective member 11 can be inserted is opened above the auxiliary gas introduction port 12 of the susceptor body 7, and after the protective member 11 is disposed at a predetermined position, the through hole 10a is inserted. It is blocked by the sealing member 20. By such a method, the protective member 11 can be easily provided.
- the protective member 11 has a cap-like shape with an opening 11d provided below, and is similar to FIG. 8 in that a path is provided in the direction of the through hole (first auxiliary gas flow path) 10. 8 differs from that shown in FIG. 8 in that the protective member 11 extends downward and the opening 11d also serves as the auxiliary gas inlet 12.
- the through hole 10b is provided from the lower side of the susceptor body 7 toward the first auxiliary gas flow path 10, and the protective member 11 is simply inserted from the lower side of the through hole 10b. good. That is, there is an advantage that the protective member 11 can be provided very simply by drilling and insertion.
- the second embodiment is an example where a coating layer is formed on the inner wall of the sub gas flow path. That is, as shown in FIG. 11, the structure is the same as that of the first embodiment except that a covering layer 20 is provided instead of the protective member 11.
- the coating layer 20 was formed as follows. First, silicon powder (average particle size 40 ⁇ m) and a 10% by weight aqueous solution of polyvinyl alcohol (PVA) resin were mixed and dispersed in a weight ratio of 10:10 to prepare a slurry. Next, with the wafer mounting member 6 and the lid 13 removed, the slurry was injected from one end of the through hole 10 to fill the entire inside of the through hole 10 which is a gas flow path. Subsequently, it was dried at 100 ° C. for 1 hour using a dryer, further heat-treated at 1600 ° C. for 1 hour in a non-oxidizing atmosphere, then cooled and taken out from the dryer. By this treatment, as shown in FIG.
- silicon powder average particle size 40 ⁇ m
- PVA polyvinyl alcohol
- a coating layer 20 made of silicon carbide (SiC) having a thickness of 10 ⁇ m was formed on the inner wall of the first sub-gas channel 10. Further, as apparent from FIG. 12, the SiC permeation layer 21 in which SiC penetrates to a depth of about 500 ⁇ m of the susceptor body 7 was formed. Furthermore, as shown in FIG. 13, formation of the coating layer 20 made of silicon carbide (SiC) was also confirmed on the inner wall of the second sub-gas channel 17.
- the slurry containing silicon powder and resin is filled in the tube, even if the solvent evaporates during drying, if the tube diameter is small, it does not move so much in the direction of gravity due to the surface tension, and remains on the entire inner wall. to continue. Therefore, the slurry adhering to the inner wall of the through hole 10 stays on the inner wall surface and also enters the pores of the susceptor body 7 (carbonaceous material).
- this slurry is heat-treated in a non-acidic atmosphere, the resin component and metal silicon react in the slurry remaining on the inner wall surface, and a coating layer 20 made of SiC is formed.
- the infiltrated slurry reacts with the resin component and metal silicon in the pores of the susceptor body 7 (carbonaceous material) to form an infiltrating portion 21 containing SiC. Since the SiC of the coating layer 20 and the permeation part 21 is formed from the same slurry, each SiC is not separated but is in a continuous state.
- the thickness of the coating layer 20 is not limited to the above-described thickness, but may be 0.1 to 100 ⁇ m from the viewpoint of protecting the susceptor body 7 from caustic gas, and a coating layer having a large thickness is formed. Therefore, the thickness is preferably 0.5 to 50 ⁇ m, more preferably 1 to 20 ⁇ m.
- the permeated slurry reacts with the susceptor body 7 to form a SiC permeation portion 21.
- the formation of the permeation part 21 makes it difficult for the coating layer 20 made of SiC to peel off, and even if some cracks or the like occur in the coating layer 20, the presence of the permeation part 21 causes causticity. Corrosion of the susceptor body 7 (carbonaceous material) due to gas is suppressed.
- the thickness of the permeation portion 21 may be 10 to 2000 ⁇ m from the surface of the susceptor body 7, and preferably 100 to 1000 ⁇ m.
- the entire protective member 11 is made of a resistant material (SiC) that has low reactivity with caustic gas.
- SiC a resistant material
- the surface of the straw-shaped carbon material (graphite) has no caustic gas. You may use what coated the film of the resistant material with low reactivity.
- CVD method it is possible to use the same CVD method as that for coating the entire susceptor body 7.
- a protective member is not disposed in the second auxiliary gas flow path 17, but a protective member may be disposed.
- the second auxiliary gas channel 17 is shorter than the first auxiliary gas channel 10. Accordingly, when coating the entire susceptor body 7 with SiC or the like, the inner wall of the second auxiliary gas channel 17 is often also coated.
- the method for forming the coating layer shown in the second embodiment is not limited to the above method.
- the coating layer 20 is formed on the entire first sub-gas flow path 10.
- the present invention is not limited to such a structure, and the first embodiment shown in FIGS. Similarly to the embodiment shown in FIGS. 8 and 9, it may be formed only in the vicinity of the upstream end portion of the first auxiliary gas flow path 10.
- the susceptor body 7 and the positioning member 5 are configured as separate bodies, but they may be integrally formed.
- SiC is used as a material for coating the entire susceptor body 7, but the material is not limited to this, and has low reactivity with caustic gas (TaC, BN, etc.). I just need it.
- the epitaxial growth is performed in a state where the wafer is placed on the wafer placing member 6, but directly above the groove 15 without using the wafer placing member 6.
- the structure which mounts a wafer may be sufficient.
- the wafer is placed on the wafer placement member 6 (in the case of the above two embodiments)
- the wafer is placed in a pocket (not shown) provided on the wafer placement member 6, and the wafer and the wafer placement are placed.
- the member 6 is structured to rotate together.
- the present invention can be used for a vapor phase epitaxial growth apparatus or the like.
- Susceptor 7 Susceptor body 10: Through hole (first auxiliary gas flow path) 11: Protective member 12: Sub-gas inlet 15: Strip 16: Sub-gas outlet
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Abstract
Description
尚、サセプタ本体と別体形成されていれば、保護部材が消耗した場合には、保護部材を交換することで容易に保護力を回復させることが可能となる。
保護部材は副ガス流路全体に設けるのが好ましいが、コスト面や保護部材の形成時の都合等から必ずしも副ガス流路全体に設けられない場合も生じる。このような場合でも、副ガスが流通する上流側端部付近に設けておけば上記効果が十分に発揮される。なぜなら、副ガス導入口付近は導入された副ガスが乱流となるため、他の部位と比べて炭素と苛性ガスとの反応が特に進行し易いからである。
上記構成であれば、上記保護部材が備えられている場合と同様の理由により、副ガスが炭素と接触して副ガスの組成が変わるのを抑制できるので、半導体材料の品質に悪影響を及ぼすのを抑えることができる。
尚、被覆層を形成する場合には、副ガス流路が狭小且つ長大であっても、容易且つ低コストで被覆層を形成できる。尚、副ガス流路は、内径より副ガス導入口からの深さが大きいものに適用するのが好ましく、副ガス導入口からの深さが内径の5倍以上のものに適用するのがより好ましい。
上述した理由と同様の理由により、副ガスが流通する上流側端部付近に設けておけば上記効果が十分に発揮される。
浸透部が形成されていることで、被覆層の密着性が向上するため、被覆層がサセプタ本体から剥離し難くなる。加えて、被覆層に若干のクラックや損耗等が生じた場合であっても、浸透部の存在によって、苛性ガスに起因するサセプタ本体の腐食を抑制できる。
主ガスに含まれるガス種と同じガス種を含むものであれば、副ガスとウェハとが接触した場合に、半導体材料の品質への影響が一層小さくなる。
但し、これらのガスに限定するものではなく、NF3、CF4、ClF3、O2、O3、F2ガス等であっても良い。
ウェハ載置部材上にウェハを載置する構成であれば、ウェハと副ガスとの接触を抑制できるので、半導体の品質への影響がより軽減される。
〔第1実施例〕
本第1実施例は、サセプタ本体とは別体形成された保護部材が、副ガス流路内壁に備えられている場合の例である。
また、ウェハ載置部材6上にウェハが載置された状態で、チャンバー上方から主ガスを導入すれば、ウェハ上でエピタキシャル成長が行われる。
本第2実施例は、副ガス流路内壁に被覆層が形成されている場合の例である。即ち、図11に示すように、上記保護部材11の代わりに被覆層20を設けた他は、上記第1実施例と同様の構造である。
先ず、ケイ素粉末(平均粒度40μm)と、ポリビニルアルコール(PVA)樹脂の10重量%水溶液とを、重量比で10:10の割合で混合分散させてスラリーを調製した。次に、ウェハ載置部材6と蓋13とを取り外した状態で、上記スラリーを貫通孔10の一端から注入して、ガス流路である貫通孔10内全体に充填した。次いで、乾燥機を用いて100℃で1時間乾燥させ、さらに非酸化性雰囲気下にて1600℃で1時間熱処理した後、冷却して乾燥機から取り出した。この処理により、図11に示すように、第1副ガス流路10の内壁に、厚さ10μmの炭化ケイ素(SiC)から成る被覆層20が形成された。また、図12から明らかなように、サセプタ本体7の約500μmの深さまでSiCが浸透したSiC浸透層21が形成されていた。更に、図13に示すように、第2副ガス流路17の内壁にも、炭化ケイ素(SiC)から成る被覆層20の形成が確認された。
上記浸透部21の厚みは、サセプタ本体7の表面から10~2000μmの深さで形成されていれば良く、好ましくは100~1000μmの深さで形成される。
(1)上記第1実施例では、保護部材11全体が苛性ガスとの反応性が低い耐性材料(SiC)で構成されているが、ストロー形状の炭素材料(黒鉛)の表面に苛性ガスとの反応性が低い耐性材料の被膜がコーティングされたものを用いても良い。この場合のコーティング法としては、サセプタ本体7の全体にコーティングする場合と同様のCVD法を用いることが可能である。
7:サセプタ本体
10:貫通孔(第1副ガス流路)
11:保護部材
12:副ガス導入口
15:条溝
16:副ガス放出口
Claims (11)
- 半導体被膜を形成するための主ガスと、ウェハを浮上及び回動させるための副ガスとを導入し、サセプタ本体上に載置されたウェハを回動させながら上記ウェハ上に上記主ガスにより半導体被膜を形成する気相エピタキシャル成長に用いるサセプタであって、
上記サセプタ本体内に上記副ガスを流通させる副ガス流路が設けられ、上記副ガスは、炭素との反応性の高い苛性ガスを含み、上記副ガス流路内壁の少なくとも一部には、上記サセプタ本体とは別体形成されると共に上記苛性ガスとの反応性が低い耐性材料で構成された保護部材が備えられていることを特徴とするサセプタ。 - 上記保護部材は上記副ガス流路において、副ガスが流通する上流側端部の近傍に設けられている、請求項1に記載のサセプタ。
- 上記耐性材料は、SiC、TaC及びBNからなる群から選ばれた少なくとも1つである、請求項1又は2に記載のサセプタ。
- 半導体被膜を形成するための主ガスと、ウェハを浮上及び回動させるための副ガスとを導入し、サセプタ本体上に載置されたウェハを回動させながら上記ウェハ上に上記主ガスにより半導体被膜を形成する気相エピタキシャル成長に用いるサセプタであって、
上記サセプタ本体内に上記副ガスを流通させる副ガス流路が設けられ、上記副ガスは、炭素との反応性の高い苛性ガスを含み、上記副ガス流路内壁の少なくとも一部に上記苛性ガスとの反応性が低い被覆層が形成されていることを特徴とするサセプタ。 - 上記被覆層は上記副ガス流路において、副ガスが流通する上流側端部の近傍に設けられている、請求項4に記載のサセプタ。
- 上記被覆層のサセプタ本体側に、被覆層と同じ材質の物質が浸透された浸透部が形成されている、請求項4又は5に記載のサセプタ。
- 上記被覆層は、SiC、TaC及びBNからなる群から選ばれた少なくとも1つから成る、請求項4~6のいずれか1項に記載のサセプタ。
- 上記副ガスは上記主ガスに含まれるガス種と同じガス種を含む、請求項1~7のいずれか1項に記載のサセプタ。
- 上記苛性ガスは、NH3ガス及び/又はH2ガスである、請求項1~8のいずれか1項に記載のサセプタ。
- 上記ウェハはウェハ載置部材上に載置されている、請求項1~9のいずれか1項に記載のサセプタ。
- 半導体被膜を形成するための主ガスと、ウェハを浮上及び回動させるための副ガスとを導入し、サセプタ本体上に載置されたウェハを回動させながら上記ウェハ上に上記主ガスにより半導体被膜を形成する気相エピタキシャル成長に用いるサセプタ本体内に、上記副ガスを流通させる副ガス流路が設けられ、上記副ガス流路の内面が炭素質材料からなり、上記副ガス流路内壁の少なくとも一部に被覆層が形成されたサセプタの製造方法であって、
上記副ガス流路内壁に、金属ケイ素及び/又は金属タンタルと樹脂分とを溶媒中に分散させたスラリーを塗布する工程と、
前記スラリー中の溶媒を揮発させる工程と、
熱処理により、前記金属ケイ素及び/又は金属タンタルと炭素質材料中の炭素及び前記樹脂分中の炭素とを反応させて炭化ケイ素及び/又は炭化タンタル含有する被覆層を生成させる工程と、
を有することを特徴とするサセプタの製造方法。
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WO2021119900A1 (zh) * | 2019-12-16 | 2021-06-24 | 东莞市中镓半导体科技有限公司 | 用于GaN材料生长的气动托盘 |
CN113322447B (zh) * | 2021-04-06 | 2022-04-15 | 华灿光电(浙江)有限公司 | 提高外延片波长均匀性的石墨基板及其制造方法 |
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