WO2014121555A1 - 阵列基板及其检测方法和检测装置 - Google Patents

阵列基板及其检测方法和检测装置 Download PDF

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Publication number
WO2014121555A1
WO2014121555A1 PCT/CN2013/074033 CN2013074033W WO2014121555A1 WO 2014121555 A1 WO2014121555 A1 WO 2014121555A1 CN 2013074033 W CN2013074033 W CN 2013074033W WO 2014121555 A1 WO2014121555 A1 WO 2014121555A1
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WIPO (PCT)
Prior art keywords
array substrate
additional layer
color
light
layer
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PCT/CN2013/074033
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English (en)
French (fr)
Inventor
冀新友
郭建
Original Assignee
京东方科技集团股份有限公司
北京京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US14/395,597 priority Critical patent/US9389442B2/en
Publication of WO2014121555A1 publication Critical patent/WO2014121555A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/958—Inspecting transparent materials or objects, e.g. windscreens
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513—Liquid crystal panels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/062—LED's
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136254—Checking; Testing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136268—Switch defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06596—Structural arrangements for testing

Definitions

  • the present disclosure is in the field of display technology; more specifically, it relates to an array substrate, a detecting method thereof and a detecting device. Background technique
  • TFT-LCDs Thin film transistor liquid crystal displays
  • the TFT-LCD is formed by a pair of array substrates and a color filter substrate.
  • a gate scan line and a data signal line defining a pixel region are arranged to intersect each other in the array substrate, and a pixel electrode and a thin film transistor are disposed in each pixel region.
  • the main object of the present disclosure is to provide an array substrate, a detecting method thereof and a detecting device, which can realize early detection of a disconnection type defect occurring in the production process of the array substrate, so that the discovery and elimination of the bad cause can be realized as early as possible. Improve production efficiency and product yield.
  • an array substrate including a structure to be inspected disposed on a substrate, and a structure for detecting whether a structure to be detected is disconnected is disposed under the structure to be inspected
  • An additional layer having a color different from the color of the structure to be inspected and having a uniform pattern shape.
  • the structure to be detected is at least one of the following structures: a gate, a gate scan line, a data signal line, an active layer, a source, and a drain.
  • a transparent protective layer is also disposed above the additional layer.
  • the additional layer is one of a copper layer, an oxide layer of silicon, a nitride layer of silicon, and a polyimide layer to which a dye is added.
  • the thickness of the additional layer and the transparent protective layer are not more than 500 ⁇ .
  • a detection method for the above array substrate comprising:
  • Determining the color of the reflected light reflected by the array substrate If the color of the reflected light has the color of the additional layer, the structure to be detected corresponding to the color of the additional layer is broken. If the color of the reflected light has no additional layer The color of the structure to be inspected does not cause a disconnection type defect.
  • a filter unit having the same color as the additional layer is disposed on the optical path of the reflected light, and the color of the light reflected by the array substrate is judged by the light passing through the filter unit.
  • a detecting apparatus for the above array substrate comprising: a test base, a light source, and a filter unit; the test base is configured to place an array substrate to be inspected,
  • the light source is a white light source for illuminating white light onto the array substrate on which the additional layer is formed, and the filter unit is for filtering light of a color different from the additional layer.
  • the filter unit is a filter of the same color as the additional layer.
  • the detecting device further includes a light detecting unit for identifying light of the same color as the additional layer.
  • the detecting device further includes a cover, the light source and the filter unit are respectively located above two sides of the test base, and the light detecting unit is located above the filter unit, and the cover is located at the detecting device
  • the outer side is for accommodating the test base, the light source, the filter unit, and the light detecting unit.
  • FIG. 1 is a schematic plan view showing a defect caused by channel disconnection in an array substrate structure
  • FIG. 2 is a cross-sectional view taken along line A1-A1 of FIG. 1;
  • Figure 3 is a cross-sectional view corresponding to the normal array structure of Figure 2;
  • FIG. 4 is a plan view showing an array substrate structure having a second additional layer in accordance with a second embodiment of the present disclosure
  • Figure 5 is a cross-sectional view taken along line A2-A2 of Figure 4;
  • Fig. 6 is a schematic view showing the structure of a device for detecting a disconnection type defect in an array substrate. detailed description
  • the present disclosure provides an array substrate including the substrate. Structure to be inspected, under the structure to be inspected The square is provided with an additional layer for detecting whether or not the structure to be inspected is broken, the color of the additional layer being different from the color of the structure to be inspected and the pattern shape being uniform. .
  • the structure to be inspected is at least one selected from the group consisting of a gate, a gate scan line, a data signal line, an active layer, a source and a drain.
  • a transparent protective layer may be further disposed above the additional layer, and the transparent protective layer material may be a commonly used transparent protective layer material, for example, the same material as the gate insulating layer in the array substrate.
  • the transparent protective layer material may be a commonly used transparent protective layer material, for example, the same material as the gate insulating layer in the array substrate.
  • silicon nitride (SiNx) is used.
  • the color of the additional layer may be any color as long as it is different from the color of the structure to be detected above, and the additional layer may be a copper layer, an oxide layer of silicon, a nitride layer of silicon, and a dye-added polymer.
  • the additional layer may be a copper layer, an oxide layer of silicon, a nitride layer of silicon, and a dye-added polymer.
  • One of the imide layers is one of the imide layers.
  • the additional layer and the transparent protective layer should be as thin as possible to prevent an increase in pixel capacitance and a change in substrate stress.
  • Each of the additional layer and the transparent protective layer has a thickness of not more than 5000A, preferably
  • the present disclosure also provides a method for detecting the array substrate described above, including:
  • Determining the color of the light reflected by the array substrate and if it is the color of the additional layer, determining that the structure above the additional layer is broken, if not the color of the additional layer or the color of the additional layer, Determining that the structure above the additional layer does not have a disconnection type defect; when determining the color of the reflected light, a filter unit having the same color as the additional layer is disposed on the optical path of the reflected light, and the light passing through the filter unit is passed through The color of the light reflected by the array substrate is judged.
  • the present disclosure further provides a detecting apparatus for the above array substrate, comprising: a test base, a light source, and a filter unit; the test base is configured to place an array substrate to be detected, and the light source is a white light source.
  • the filter unit is for filtering light of a color different from the additional layer.
  • the filter unit is a filter of the same color as the additional layer.
  • the method further includes a light detecting unit for identifying light of the same color as the additional layer.
  • the light source and the filter unit are respectively located above both sides of the test base, and the light detecting unit is located above the filter unit.
  • Embodiment 1 The following embodiments combine the structures to be inspected, the detection method of the array substrate, and the detecting device, The disclosure is further described. It should be noted that the embodiments of the present disclosure are all described by taking one of the structures to be detected as an example, and a transparent protective layer is preferably disposed above the additional layer. It will be understood that the embodiments of the present disclosure may be combined in any manner. Embodiment 1
  • the structure to be detected in the embodiment of the present disclosure is a data signal line.
  • a gate scan line is used to apply an turn-on voltage to each row of gates.
  • the data signal line writes an electrical signal to the pixels of the row.
  • the electrical signal passes through the active layer 3 under the channel and is transmitted through the drain to the pixel electrode 5.
  • the data signal line When the data signal line is broken due to dust or the like, the data signal line is disconnected from the portion, and the electrical signal cannot be applied to the corresponding pixel electrode, and the liquid crystal molecules on the pixel electrode are not deflected. Therefore, in the normally white mode, the light will always pass through the defective portion of the pixels, resulting in a bright line type defect.
  • a first additional layer is disposed under the data signal line, and the main function of the first additional layer is as a marker of occurrence of a defect, the color of the first additional layer is different from the color of the data signal line and the pattern The shape is the same.
  • the data signal line generally adopts a metal having a relatively high chemical resistivity such as Ta, Cr, Mo or the like as an alloy metal material, and now a low-resistance metal Cu is used as a data signal line. material.
  • the data signal line is Mo
  • the structure to be detected is black
  • the first additional layer may select a polyimide layer to which a red dye is added.
  • Other materials may be used for the data line number line, as long as the additional layer is different from the color of the structure to be inspected, and is not described here.
  • the array substrate on which the first additional layer is formed has a data signal line structure, and may also have a gate. Scan line, gate, source and drain, etc., but there should be no other structure above the data signal line, otherwise it will affect the judgment of the disconnection type. Determining the color of the light reflected by the array substrate, if it is red, determining that the structure above the additional layer is broken, and if it is not red, determining that the structure above the additional layer is not broken bad.
  • a filter unit having the same color as the additional layer is disposed on the optical path of the reflected light, and the color of the light reflected by the array substrate is determined by the light passing through the filter unit.
  • the detecting device of the array substrate in this embodiment includes: a test base, a light source, and a filter unit.
  • the test base is configured to place an array substrate to be inspected
  • the light source is a white light source for illuminating white light on an array substrate formed with an additional layer
  • the filter unit is configured to filter and color the additional layer The same light.
  • the filter unit is a filter of the same color as the additional layer.
  • the filter unit is a red filter, and the function of the red filter is to absorb other light than red light, and only let red light pass.
  • the detecting device further includes a light detecting unit for identifying the same color as the additional layer.
  • the light detecting unit can be qualitative detection or quantitative detection.
  • the basic principle is that only red light can pass through the red filter, when the structure above the additional layer is broken, when white light is irradiated with red coloring agent.
  • the light detecting unit recognizes only red. If the structure above the additional layer does not have a broken type, when the white light is irradiated on the black data signal line, After the red filter, the light detecting unit does not recognize red or recognizes a small amount of red.
  • the quantitative detecting unit can be added to the light detecting unit to more accurately determine whether or not the disconnection type defect occurs.
  • the light source and the filter unit are respectively located above two sides of the test base, and the light detecting unit is located above the filter unit.
  • the white light is reflected on the array substrate, after the light is filtered, the light reaches the light detecting unit, and the device is easy to perform, and the structure to be detected on the array substrate can be easily and quickly detected whether the disconnection type is broken.
  • the structure to be detected in this embodiment is at least one of an active layer, a source drain, and a data signal line.
  • an active layer As shown in FIG. 2 and FIG. 3, when the active layer 3 under the channel is subjected to the disconnection type defect 6 caused by the over-etching phenomenon, the active layer 3 under the channel is partially etched away to expose the underlying gate. In the case of the insulating layer 9, the charge and discharge function of the portion of the pixel is different from that of the normal pixel. The turn-on current Ion and the turn-off current Ioff and the threshold voltage Vth change, resulting in poor spots and mura. This type of defect is usually not discovered until the test phase, and it cannot be discovered and taken immediately after each process, which delays the timing of the solution and makes the bad modification more difficult or impossible to repair.
  • a second additional layer is disposed under the active layer, and the second additional layer is disposed between the gate insulating layer and the active layer, and the second additional layer functions as a marker for occurrence of defects. Place The color of the second additional layer is different from the color of the active layer and the pattern shape is uniform.
  • the active layer is generally an oxide semiconductor such as a-si or IGZO (indium gallium zinc oxide). When the active layer adopts a-si, the structure to be detected is brownish red, and at this time, the second additional layer may select a polyimide layer to which a green coloring agent is added.
  • the active layer may be made of other materials as long as the additional layer is different from the color of the structure to be inspected, and is not described here.
  • the array substrate on which the first additional layer is formed has an active layer structure, and may also have a gate.
  • Determining the color of the light reflected by the array substrate if it is green, determining that the structure above the additional layer is broken, and if it is not green, determining that the structure above the additional layer is not broken Poor; when judging the color of the reflected light, a filter unit having the same color as the additional layer is disposed on the optical path of the reflected light, and the color of the light reflected by the array substrate is determined by the light passing through the filter unit .
  • the detecting device for the array substrate in this embodiment includes: a test base, a light source, and a filter unit.
  • the test base is configured to place an array substrate to be inspected
  • the light source is a white light source for illuminating white light on an array substrate formed with an additional layer
  • the filter unit is configured to filter and color the additional layer The same light.
  • the filter unit is a filter of the same color as the additional layer.
  • the filter unit is a green filter, and the function of the green filter is to absorb light other than green light, and only allow green light to pass.
  • the detecting device further includes a light detecting unit for identifying the same color as the additional layer.
  • the light detecting unit can be qualitative or quantitative.
  • the basic principle is that only the green color of the green filter can pass through.
  • the light detecting unit recognizes only green, and if the structure above the additional layer does not have a broken type, when white light is irradiated on the brown-red active layer, After the green filter, the light detecting unit does not recognize green or recognizes a small amount of green.
  • the quantitative detecting unit can be added to the light detecting unit to more accurately determine whether or not the disconnection type defect occurs.
  • the light source and the filter unit are respectively located above two sides of the test base, and the light detecting unit is located above the filter unit.
  • the white light is reflected on the array substrate, after the light is filtered, the light reaches the light detecting unit, and the device is easy to perform, and the structure to be detected on the array substrate can be conveniently and quickly detected whether the disconnected type is not formed. Good.
  • the array substrate according to this embodiment includes a substrate 8, a gate scan line and a gate electrode 1, a gate insulating layer 9, a second additional layer 11, and a second transparent layer which are sequentially formed on the substrate 8.
  • the above substrate may be a substrate commonly used in the art, such as a glass substrate, or a plastic substrate having high transparency and stability.
  • the main function of the second additional layer 11 is as a marker of a defective occurrence position, and the material thereof may be a material having a color different from that of the active layer 3 and capable of withstanding the temperature of the subsequent fabrication process of the array substrate.
  • the material forming the second additional layer 11 described above may be, for example, a metal (for example, copper), an insulating material (for example, an oxide of silicon, a nitride of silicon), and a polymer material (for example, a polyimide resin to which a dye is added).
  • a metal for example, copper
  • an insulating material for example, an oxide of silicon, a nitride of silicon
  • a polymer material for example, a polyimide resin to which a dye is added.
  • the second additional layer 11 may be formed into a layer by a film forming method conventionally used in the art depending on the materials used.
  • a layer may be formed by magnetron sputtering; when the second additional layer 11 is a polymer material layer, a layer may be formed by spin coating, printing or inkjet.
  • a layer may be formed by a deposition method; then the layers of the above materials are respectively etched, or exposed, developed to form a desired pattern.
  • a second transparent protective layer 12 is formed on the second additional layer 11.
  • Second transparent protective layer 12 is formed on the second additional layer 11.
  • the material of 12 may be a conventional transparent protective layer material, for example, the same as the material of the gate insulating layer 9, preferably silicon nitride (SiNx), and may be formed by a film forming method commonly used in the art, such as a deposition method.
  • SiNx silicon nitride
  • the second additional layer 11 and the second transparent protective layer 12 formed by the above method are identical in shape to the active layer pattern under the channel.
  • the second additional layer 11 and the second transparent protective layer 12 should be as thin as possible to prevent an increase in pixel capacitance effect and a change in substrate stress.
  • the thickness of each of the second additional layer 11 and the second transparent protective layer 12 is usually not more than 5000 A, preferably 10 to 3000 A.
  • the second additional layer 11 is an oxide layer of silicon or a nitride layer of silicon which can be prevented from being etched
  • the second transparent protective layer 12 may be omitted, that is, the active layer is directly formed on the second additional layer 11.
  • the structure to be detected in this embodiment may be an active layer and a data signal line.
  • the color of the additional layer should be different from the color of the active layer and the data signal line. Since the principle is the same, it will not be described herein.
  • the structure to be inspected in this embodiment may be a source drain and an active layer.
  • the color of the additional layer should be different from that of the active layer and the source and drain. Since the principle is the same, it will not be described here.
  • the structure to be inspected in this embodiment may be a source and a drain.
  • the color of the additional layer should be different from the source and drain colors. Since the principle is the same, it will not be described here.
  • the structure to be detected in this embodiment is at least one of a gate and a gate scan line.
  • a third additional layer and a third transparent protective layer directly on the third additional layer may also be formed between the gate 1 and the substrate 8.
  • Metals or alloys such as Cr, W, Cu, Ti, Ta, Mo, etc. can be used for the gate and gate scan lines, and a metal layer composed of a plurality of layers of metal can also satisfy the needs.
  • the third additional layer and the third transparent protective layer are identical in pattern shape to the gate and/or gate scan lines, and are formed in the same manner as described above with respect to the second additional layer and the second transparent protective layer.
  • the lower third transparent protective layer e.g., SiNx layer
  • the third additional layer are also exposed and display corresponding colors.
  • the ADS mode is a planar electric field wide viewing angle core technology. Its core technical characteristics are described as: forming an electric field generated by the edge of the slit electrode in the same plane and an electric field generated between the slit electrode layer and the plate electrode layer to form a multi-dimensional electric field, so that the liquid crystal cell All of the aligned liquid crystal molecules between the inner slit electrodes and directly above the electrodes can be rotated, thereby improving the liquid crystal working efficiency and increasing the light transmission efficiency.
  • an array substrate detecting apparatus includes: a test base 13, a light source 15 that emits white light, a filter unit 16 and a light detecting unit 17, and a cover 18.
  • the light source 15 and the filter unit 16 are respectively located above the two sides of the test base 13 , and the light detecting unit 17 is located above the filter unit 16 , and the cover 18 is located at the entire detecting device.
  • the outer side is for accommodating the detection device.
  • the filter unit 16 is configured to filter light that is different in color from the additional layer.
  • the white light emitted by the light source 15 is reflected by the array substrate 14 placed on the test base 13 and then passes through the filter unit 16 to reach the light detecting unit. 17; and the above-mentioned light detecting unit 17 is for identifying light of the same color as the additional layer.
  • test pedestal 13 may be a color (e.g., black, etc.) and a material (e.g., marble, etc.) capable of absorbing light emitted from the light source 15 to prevent stray light from affecting the test results.
  • Light source 15 can be any source that emits white light, preferably a highly directional LED.
  • the filter unit 16 is a filter having the same color as the additional layer.
  • the outer cover 18 can be any opaque material to form a closed black box structure within the device, thereby facilitating the determination of the color of the filtered light.
  • Embodiments of the present disclosure provide an array substrate detecting method.
  • the method includes: illuminating white light onto an array substrate on which an additional layer is formed; and
  • a filter unit having the same color as the additional layer is disposed on the optical path of the reflected light, and the color of the light reflected by the array substrate is judged by the light passing through the filter unit.
  • the array substrate 14 is placed on the test base 13.
  • the test abutment 13 is, for example, a black marble abutment.
  • the position of the light source 15 (LED light source) is adjusted, and the white light emitted from the LED light source 15 is reflected by the array substrate 14 to the filter unit 16, and filtered to reach the light detecting unit 17. If the color detected by the light detecting unit 17 is the same as the color of the additional layer, the related structure to be detected in the array substrate 14 is broken. If the light detecting unit 17 detects that the color is not the color of the additional layer or contains a trace amount of the additional layer color, the correlation in the array substrate 14 The disconnected type defect did not occur in the structure to be inspected.
  • the disconnection type defects of the active layer under the channel are concentrated, and other portions have less corresponding occurrences, so that the light detecting unit 17 receives the defect.
  • the filtered light reflected from a particular portion will also be relatively strong, making it easy to detect this type of defect.
  • the array substrate 14 to be tested may be placed on the test base 13 , and the array substrate 14 is irradiated by the light source 15 , and then the tester observes using a tool with a filter function (corresponding to the filter unit 16 ).
  • the glasses only transmit light of the same color as the additional layer, so that the defective position of the surface of the array substrate can be observed in the tube. Compared with the detection method described above, the detection time can be saved more.
  • the present disclosure provides a method of detecting a disconnect type defect in an array substrate and a corresponding device, and an array substrate, thereby realizing early detection of a disconnection type defect in the array substrate. Therefore, when a disconnection type defect occurs in the production process, the defect can be found as early as possible, and the adjustment of the device can be realized in time to eliminate the cause of the failure.
  • the method solves the problem of equipment lag, which makes the defect improve in time, and improves production efficiency and product yield.
  • the array substrate according to the embodiment of the present disclosure can be applied to a display device, such as a liquid crystal panel, a liquid crystal television, a liquid crystal display, an electronic paper, a digital photo frame, a mobile phone, an organic light emitting diode display device, and the like.
  • a display device such as a liquid crystal panel, a liquid crystal television, a liquid crystal display, an electronic paper, a digital photo frame, a mobile phone, an organic light emitting diode display device, and the like.

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Abstract

提供一种阵列基板，包括设置在基板（8）上的待检测结构，待检测结构的下方设置有用于检测待检测结构是否断开的附加层（11），该附加层（11）的颜色与待检测结构的颜色不同并且图案形状一致。还提供一种用于阵列基板的检测方法和检测装置。通过阵列基板及其检测方法和检测装置，可以实现对阵列基板生产过程中出现的断开型不良的早期检测，从而可以尽早实现不良原因的发现和消除，提高生产效率和产品量率。

Description

阵列基板及其检测方法和检测装置 技术领域
本公开属于显示技术领域； 更具体地， 涉及一种阵列基板及其检测方法 和检测装置。 背景技术
薄膜晶体管液晶显示器（TFT-LCD )因其体积小， 功耗低、 无辐射等特 点， 在当前的平板显示器市场占据了主导地位。 TFT-LCD 由阵列基板和彩 膜基板对盒形成。在阵列基板中相互交叉地配置限定像素区域的栅极扫描线 和数据信号线， 并在各像素区域中配置像素电极和薄膜晶体管。
当前的 TFT-LCD制造工艺中， 亮线和亮点是制造过程中的主要不良。 其中，亮线大部分是由于灰尘引起的栅极扫描线或者数据信号线断开引起的 不良， 表现在显示屏上就是不随着屏幕色彩变化的亮线。 亮点不良则由多种 原因引起， 例如灰尘， 薄膜残留等等。 针对 4-掩模（4-mask )技术而言， 最 主要的两种不良是搭接导通（Gray Tone Bridge )和沟道断开， 分别是由于沟 道部分 a-Si残留和 a-Si被刻蚀太多引起的亮点不良。这两种不良在生产过程 中很难发现， 只有到了阵列测试（array test ) 阶段， 才可以实现对于搭接导 通的检出。 对于沟道断开引起的不良， 如果沟道部分没有完全断开的话， 它 的充放电功能还可以完成， 则在阵列测试阶段也很难被发现。 只有到了液晶 盒测试阶段， 才会以条纹不良的形式表现出来。
综上所述，所有这些不良最早也要在阵列测试阶段才能被检测出来， 而 沟道断开引起的不良一直到液晶盒测试阶段才能检出。这样就造成设备调整 时间的滞后， 使得不良持续发生， 产生大批相似的不良。 发明内容
有鉴于此，本公开的主要目的在于提供阵列基板及其检测方法和检测装 置， 可以实现对阵列基板生产过程中出现的断开型不良的早期检测， 从而可 以尽早实现不良原因的发现和消除， 提高生产效率和产品良率。
根据本公开的一个方面，提供了一种阵列基板，其包括设置在基板上的 待检测结构，所述待检测结构的下方设置有用于检测待检测结构是否断开的 附加层， 所述附加层的颜色与待检测结构的颜色不同并且图案形状一致。 所述待检测结构为下述结构的至少一种： 栅极、栅极扫描线、数据信号 线、 有源层、 源极、 漏极。
所述附加层的上方还设置有透明保护层。
所述附加层为铜层、硅的氧化物层、硅的氮化物层和加有染色剂的聚酰 亚胺层中的一种。
附加层和透明保护层的厚度均不大于 500θΑ。
根据本公开的另一个方面， 提供了一种用于上述的阵列基板的检测方 法， 其包括：
向形成有附加层的阵列基板上照射白光；
判断由所述阵列基板反射后的反射光的颜色，如果反射光的颜色有附加 层的颜色， 则对应所述附加层颜色的待检测结构发生断开型不良； 如果反射 光的颜色没有附加层的颜色， 则所述待检测结构没有发生断开型不良。
在判断反射光的颜色时，在反射光的光路上设置一与所述附加层颜色相 同的滤光单元，通过透过滤光单元的光来判断经过所述阵列基板反射后的光 线的颜色。
根据本公开的另一个方面， 提供了一种用于上述阵列基板的检测装置， 其包括： 测试基台、 光源及滤光单元； 所述测试基台用于放置待检测的阵 列基板，所述光源为白光光源，用于向形成有附加层的阵列基板上照射白光， 所述滤光单元用于过滤与所述附加层颜色不相同的光。
所述滤光单元为与所述附加层颜色相同的滤光片。
所述检测装置还包括光检测单元，所述光检测单元用于识别与所述附加 层颜色相同的光。
所述检测装置还包括外罩，所述光源和所述滤光单元分别位于所述测试 基台两侧的上方， 且所述光检测单元位于所述滤光单元的上方， 所述外罩位 于检测装置的外侧，用于容纳所述测试基台、光源、滤光单元和光检测单元。
综上所述， 通过在阵列基板中形成与待检测结构不同的颜色的附加层， 并检测阵列基板反射光线的颜色，可实现对于阵列基板图形断开型不良的早 期检测， 及时发现阵列基板中的断开型不良， 从而能尽早调整设备， 减少不 良品的产生。 附图说明
为了更清楚地说明本公开或现有技术中的技术方案，下面将对本公开提 供的技术方案或现有技术描述中所需要使用的附图作筒单地介绍，显而易见 地，下面描述中的附图仅仅是本公开的技术方案的部分具体实施方式图示说 明， 对于本领域普通技术人员来讲， 在不付出创造性劳动的前提下， 还可以 根据这些附图获得其他的附图。
图 1为阵列基板结构中发生沟道断开引起不良的平面示意图； 图 2为图 1中 A1-A1向的剖面图；
图 3为对应于图 2的正常阵列结构的剖面图；
图 4 为根据本公开第二实施例的具有第二附加层的阵列基板结构的平 面示意图；
图 5为图 4中 A2-A2向的剖面图；
图 6为检测阵列基板中断开型不良的装置的结构示意图。 具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行 清楚、 完整地描述， 显然， 所描述的实施例仅仅是本公开一部分实施例， 而 不是全部的实施例。基于本公开中的实施例， 本领域普通技术人员在没有作 出创造性劳动前提下所获得的所有其他实施例， 都属于本公开保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开所属领 域内具有一般技能的人士所理解的通常意义。本公开专利申请说明书以及权 利要求书中使用的 "第一"、 "第二" 以及类似的词语并不表示任何顺序、 数 量或者重要性， 而只是用来区分不同的组成部分。 同样， "一个" 或者 "一" 等类似词语也不表示数量限制， 而是表示存在至少一个。 "连接" 或者 "相 连"等类似的词语并非限定于物理的或者机械的连接， 而是可以包括电性的 连接， 不管是直接的还是间接的。 "上"、 "下"、 "左"、 "右" 等仅用于表示 相对位置关系， 当被描述对象的绝对位置改变后， 则该相对位置关系也相应 地改变。
为了实现对阵列基板生产过程中出现的断开引起不良的早期检测，从而 可以尽早实现不良原因的发现和消除， 提高生产效率和产品良率， 本公开提 供一种阵列基板， 其包括设置在基板上的待检测结构， 所述待检测结构的下 方设置有用于检测待检测结构是否断开的附加层，所述附加层的颜色与待检 测结构的颜色不同并且图案形状一致。。
所述待检测结构为选自下述结构的至少一种： 栅极、栅极扫描线、数据 信号线、 有源层、 源极和漏极。
为了保护附加层的结构，可以进一步的在所述附加层的上方设置有透明 保护层， 所述透明保护层材料可为常用的透明的保护层材料， 例如与阵列基 板中栅绝缘层相同的材料， 优选为硅的氮化物 （SiNx )。
所述附加层的颜色只要与其上方的待检测结构的颜色不同即可，不做限 制， 所述附加层可以为铜层、 硅的氧化物层、 硅的氮化物层和加有染色剂的 聚酰亚胺层中的一种。
附加层和透明保护层应该尽量薄，以防止造成像素电容效应的增加和基 板应力的变化。 附加层和透明保护层各自的厚度均不大于 5000A, 优选为
10 A-3000 A。
本公开还提供了一种用于上述的阵列基板的检测方法， 包括：
向形成有附加层的阵列基板上照射白光；
判断经过所述阵列基板反射后的光线的颜色，如果为附加层的颜色， 则 确定所述附加层上方的结构发生断开型不良，如果不是附加层的颜色或含有 微量附加层的颜色， 则确定所述附加层上方的结构没有发生断开型不良； 在判断反射光的颜色时，在反射光的光路上设置一与所述附加层颜色相 同的滤光单元，通过透过滤光单元的光来判断经过所述阵列基板反射后的光 线的颜色。
本公开还提供了一种用于上述的阵列基板的检测装置，包括：测试基台、 光源及滤光单元； 所述测试基台用于放置待检测的阵列基板， 所述光源为 白光光源， 用于向形成有附加层的阵列基板上照射白光， 所述滤光单元用于 过滤与所述附加层颜色不相同的光。
所述滤光单元为与所述附加层颜色相同的滤光片。
进一步地，所述还包括光检测单元，所述光检测单元用于识别与所述附 加层颜色相同的光。
更进一步地，所述光源和所述滤光单元分别位于所述测试基台两侧的上 方， 且所述光检测单元位于所述滤光单元的上方。
下面的实施例结合各待检测结构、 阵列基板的检测方法和检测装置，对 本公开进行进一步说明。 需要说明的是， 本公开的实施例均以其中一个待检 测结构为例进行说明， 且附加层的上方优选设置有透明保护层。 可以理解的 是， 本公开中的实施例可以以任何一种方式进行组合。 实施例一
本公开实施例中待检测结构为数据信号线。
参见图 1 , 在阵列基板中， 在每一帧中， 栅极扫描线用来对每一行栅极 施加开启电压。 当选中的行开启之后， 数据信号线对该行的像素进行电信号 的写入。 电信号经过沟道下方的有源层 3之后， 通过漏极传输到像素电极 5 上面。
当数据信号线由于灰尘等原因产生断开型不良 7的时候，数据信号线从 该部分断开， 电信号不能施加到相应的像素电极上， 像素电极上的液晶分子 也不会产生偏转现象。 因此， 在常白模式下， 光会一直透过该不良部分的像 素， 形成亮线型不良。
因此，在所述数据信号线的下方设置有第一附加层， 第一附加层的主要 作用是作为不良发生的标识物，所述第一附加层的颜色与数据信号线的颜色 不相同并且图案形状一致。 其中， 所述数据信号线一般采用化学性质比较稳 定的电阻率比较高的 Ta、 Cr、 Mo等金属或是其合金作为金属电极的材料， 现在还出现了应用低电阻金属 Cu作为数据信号线的材料。 当所述数据信号 线为 Mo时， 所述待检测结构为黑色， 此时第一附加层可以选择加有红色染 色剂的聚酰亚胺层。 数据线号线也可以采用其他材料， 只要附加层与待检测 结构的颜色不同即可， 在此不再——说明。
根据本实施例中所述阵列基板的检测方法，向形成有第一附加层的阵列 基板上照射白光此时， 形成有第一附加层的阵列基板上有数据信号线结构， 也可以有栅极扫描线、 栅极、 源漏极等结构， 但是数据信号线上方不应设置 有其他结构， 否则会影响对断开型不良的判断。 判断经过所述阵列基板反射 后的光线的颜色， 如果为红色， 则确定所述附加层上方的结构发生断开型不 良， 如果不是红色， 则确定所述附加层上方的结构没有发生断开型不良。 在 判断反射光的颜色时，在反射光的光路上设置一与所述附加层颜色相同的滤 光单元，通过透过滤光单元的光来判断经过所述阵列基板反射后的光线的颜 色。 本实施例中所述阵列基板的检测装置包括：测试基台、光源及滤光单元。 所述测试基台用于放置待检测的阵列基板， 所述光源为白光光源， 用于向形 成有附加层的阵列基板上照射白光，所述滤光单元用于过滤与所述附加层颜 色不相同的光。 所述滤光单元为与所述附加层颜色相同的滤光片。 在本实施 例中， 所述滤光单元为红色滤光片， 红色滤光片的功能在于吸收除红光以外 的其他光， 只让红光通过。
此检测装置还包括光检测单元，所述光检测单元用于识别与所述附加层 颜色相同的光。 光检测单元可以为定性检测或定量检测， 其基本原理为， 能 通过红色滤光片的只有红光， 当附加层上方的结构发生断开型不良时， 当白 光照射到加有红色染色剂的聚酰亚胺层上， 通过红色滤光片之后， 光检测单 元识别出的只能是红色， 如果附加层上方的结构没有发生断开型不良， 当白 光照射在黑色的数据信号线上， 通过红色滤光片之后， 光检测单元识别不出 红色或识别出微量的红色， 此时可以在光检测单元中增加定量检测单元， 以 更加精确的判断是否发生断开型不良。
更进一步，上述检测装置中所述光源和所述滤光单元分别位于所述测试 基台两侧的上方， 且所述光检测单元位于所述滤光单元的上方。 当白光照射 在阵列基板上发生反射， 经过滤光单元后， 光到达光检测单元， 此种装置筒 单易行， 可以方便、 快速的检测阵列基板上的待检测结构是否发生断开型不 良。 实施例二
本实施例中的待检测结构为有源层、 源漏极、 数据信号线的至少一种。 如图 2和图 3所示，当沟道下方的有源层 3发生过度刻蚀现象引起的断 开型不良 6时， 沟道下方的有源层 3被部分刻蚀掉， 露出下面的栅绝缘层 9 时， 该部分像素的充放电功能和正常像素相比就会有所差异。 开启电流 Ion 和关断电流 Ioff 以及阈值电压 Vth 都会产生变化， 从而形成亮点和波纹 ( mura )不良。 该类型的不良通常要到测试阶段才能发现， 而不能在各个工 序之后即时发现并采取解决方法， 这样就延误了解决的时机， 造成不良修改 更加困难或无法修复。
此时，在所述有源层下方设置有第二附加层，所述第二附加层设置于栅 绝缘层与有源层之间， 第二附加层的主要作用是作为不良发生的标识物， 所 述第二附加层的颜色与有源层颜色不相同并且图案形状一致。所述有源层一 般采用 a-si或 IGZO ( indium gallium zinc oxide, 铟镓辞氧化物 )等氧化物半 导体。 当所述有源层采用 a-si时， 所述待检测结构为棕红色， 此时第二附加 层可以选择加有绿色染色剂的聚酰亚胺层。 当然有源层可以采用其他材料， 只要附加层与待检测结构的颜色不同即可， 在此不再——说明。
根据本实施例中所述阵列基板的检测方法，向形成有第一附加层的阵列 基板上照射白光； 此时， 形成有第一附加层的阵列基板上有有源层结构， 也 可以有栅极扫描线、 栅极、 源漏极等结构， 但是有源层的上方不应设置有其 他结构， 否则会影响对断开型不良的判断。 判断经过所述阵列基板反射后的 光线的颜色， 如果为绿色， 则确定所述附加层上方的结构发生断开型不良， 如果不是绿色， 则确定所述附加层上方的结构没有发生断开型不良； 在判断 反射光的颜色时，在反射光的光路上设置一与所述附加层颜色相同的滤光单 元， 通过透过滤光单元的光来判断经过所述阵列基板反射后的光线的颜色。
本实施例中所述阵列基板的检测装置， 包括： 测试基台、 光源及滤光单 元。 所述测试基台用于放置待检测的阵列基板， 所述光源为白光光源， 用于 向形成有附加层的阵列基板上照射白光，所述滤光单元用于过滤与所述附加 层颜色不相同的光。 所述滤光单元为与所述附加层颜色相同的滤光片。 在本 实施例中， 所述滤光单元为绿色滤光片， 绿色滤光片的功能在于吸收除绿光 以外的其他光， 只让绿光通过。
此检测装置还包括光检测单元，所述光检测单元用于识别与所述附加层 颜色相同的光。 光检测单元可以为定性检测或定量检测， 其基本原理为， 能 通过绿色滤光片的只有绿色， 当附加层上方的结构发生断开型不良时， 当白 光照射到加有绿色染色剂的聚酰亚胺层上， 通过绿色滤光片之后， 光检测单 元识别出的只能是绿色， 如果附加层上方的结构没有发生断开型不良， 当白 光照射在棕红色的有源层上， 通过绿色滤光片之后， 光检测单元识别不出绿 色或识别出微量的绿色， 此时可以在光检测单元中增加定量检测单元， 以更 加精确的判断是否发生断开型不良。
更进一步，上述检测装置中所述光源和所述滤光单元分别位于所述测试 基台两侧的上方， 且所述光检测单元位于所述滤光单元的上方。 当白光照射 在阵列基板上发生反射， 经过滤光单元后， 光到达光检测单元， 此种装置筒 单易行， 可以方便、 快速的检测阵列基板上的待检测结构是否发生断开型不 良。
图 4为根据本公开第二实施例的阵列基板的一个像素单元的平面图，图 5为图 4中 A2-A2向的剖面图。 如图 4和图 5所示， 根据该实施例的阵列基 板包括基板 8, 依次形成在基板 8上的栅极扫描线和栅极 1、 栅绝缘层 9、 第二附加层 11、 第二透明保护层 12、 源 /漏极 2、 沟道下方的有源层 3、 钝 化层 10以及像素电极 5。
上述基板可为本领域中常用基板， 例如玻璃基板， 或透明度高、 稳定性 好的塑料基板。
第二附加层 11的主要作用是作为不良发生位置的标识物， 其材料可以 是具有与有源层 3 不同的颜色并能经受阵列基板后续制作流程的温度的材 料。
形成上述第二附加层 11的材料例如可为金属（例如铜 ), 绝缘材料（例 如硅的氧化物、 硅的氮化物）， 和高分子材料（例如加有染色剂的聚酰亚胺 树脂）。
第二附加层 11 可根据所用材料通过本领域常用的薄膜形成方式形成 层。 例如， 当第二附加层 11为金属层时， 可采用磁控溅射法形成层； 当第 二附加层 11 为高分子材料层时， 可采用旋转涂覆、 印刷或喷墨等方法形成 层； 当第二附加层 11 为绝缘材料层时， 可采用沉积法形成层； 然后上述材 料的层分别经过刻蚀， 或曝光、 显影形成所需图形。
可选地， 在第二附加层 11上形成第二透明保护层 12。 第二透明保护层
12的材料可为常用的透明的保护层材料， 例如与栅绝缘层 9的材料相同， 优选为硅的氮化物 （SiNx ), 并可用本领域常用的薄膜形成方法， 例如沉积 法形成。
通过上述方法形成的第二附加层 11和第二透明保护层 12与沟道下方有 源层图案形状一致。
第二附加层 11和第二透明保护层 12应该尽量薄，以防止造成像素电容 效应的增加和基板应力的变化。第二附加层 11和第二透明保护层 12各自的 厚度通常不大于 5000A, 优选为 10至 3000 A。
另外， 如果第二附加层 11是可以防止刻蚀的硅的氧化物层或硅的氮化 物层， 则第二透明保护层 12可以被省略， 即直接在第二附加层 11上形成有 源层以及源漏极。 本实施例中的待检测结构可以为有源层与数据信号线，此时附加层的颜 色应该为与有源层与数据信号线颜色都不相同， 由于原理相同， 在此不作赘 述。
本实施例中的待检测结构可以为源漏极与有源层，此时附加层的颜色应 该为与有源层与源漏极颜色都不相同， 由于原理相同， 在此不作赘述。
本实施例中的待检测结构可以为源漏极，此时附加层的颜色应该为与源 漏极颜色不相同， 由于原理相同， 在此不作赘述。
本实施例中的待检测结构有源层、 源漏极、数据信号线可以以任意一种 方式进行组合， 由于原理相同， 在此不作赘述。 实施例三
本实施例中的待检测结构为栅极及栅极扫描线的至少一种。
本公开的阵列基板中，还可以在栅极 1和基板 8之间形成第三附加层和 直接位于第三附加层上的第三透明保护层（未示出）。 栅极和栅极扫描线可 以选用 Cr、 W、 Cu、 Ti、 Ta、 Mo、 等金属或合金， 由多层金属组成的金属 层也能满足需要。 第三附加层和第三透明保护层与栅极和 /或栅极扫描线的 图案形状一致，其形成方法和材料与如以上关于第二附加层和第二透明保护 层所述相同。
相似地， 当在栅极 1上发生上述断开型不良时， 下面的第三透明保护层 (例如 SiNx层） 以及第三附加层也会暴露出来并显示相应的颜色。
尽管上述实施例是以 TN模式为例，但上述涉及附加层的结构也同样适 用于 ADS模式。 ADS模式是平面电场宽视角核心技术， 其核心技术特性描 述为：通过同一平面内狭缝电极边缘所产生的电场以及狭缝电极层与板状电 极层间产生的电场形成多维电场， 使液晶盒内狭缝电极间、 电极正上方所有 取向液晶分子都能够产生旋转， 从而提高了液晶工作效率并增大了透光效 率。 ADS模式的开关技术可以提高 TFT-LCD产品的画面品质， 具有高分辨 率、 高透过率、 低功耗、 宽视角、 高开口率、 低色差、 无挤压水波纹（push Mura )等优点。 针对不同应用， ADS技术的改进技术有高透过率 I-ADS技 术、 高开口率 H- ADS和高分辨率 S- ADS技术等。 实施例四 参见图 6, 根据本公开的一个实施例的阵列基板检测装置包括： 测试基 台 13、 发白光的光源 15、 滤光单元 16和光检测单元 17, 以及外罩 18。 所 述光源 15和所述滤光单元 16分别位于所述测试基台 13两侧的上方， 且所 述光检测单元 17位于所述滤光单元 16的上方， 所述外罩 18位于整个检测 装置的外侧用于容纳所述检测装置。
其中， 上述滤光单元 16用于过滤与所述附加层颜色不相同的光； 上述 光源 15发出的白光经放置在测试基台 13上的阵列基板 14反射后通过滤光 单元 16到达光检测单元 17; 且上述光检测单元 17用于识别与所述附加层 颜色相同的光。
进一步地， 测试基台 13可为能吸收光源 15发出的光线的颜色（例如黑 色等 )和材料（例如大理石等）， 以防止杂散光影响测试结果。 光源 15可为 发白光的任何光源， 优选方向性强的 LED。 滤光单元 16为与所述附加层颜 色相同的滤光片。 外罩 18可为任何不透明材料， 以使该装置内形成一个封 闭的黑箱结构， 从而更利于判断过滤后光线的颜色。 实施例五
本公开的实施例提供了一种阵列基板检测方法。 该方法包括： 向形成有附加层的阵列基板上照射白光； 和
判断经过所述阵列基板反射后的光线的颜色，如果为附加层的颜色， 则 确定所述附加层上方的结构发生断开型不良，如果不是附加层的颜色或含有 微量附加层的颜色， 则确定所述附加层上方的结构没有发生断开型不良。 其 在判断反射光的颜色时，在反射光的光路上设置一与所述附加层颜色相 同的滤光单元，通过透过滤光单元的光来判断经过所述阵列基板反射后的光 线的颜色。
具体地， 在如图 6所示的装置中， 将阵列基板 14放到测试基台 13上。 测试基台 13例如为黑色大理石基台。 调整光源 15 ( LED光源）的位置， 使 LED光源 15发出的白光由阵列基板 14反射至滤光单元 16, 经过滤后到达 光检测单元 17。 如果光检测单元 17检测的颜色与附加层的颜色相同， 则阵 列基板 14中的相关待检测结构发生断开型不良。如果光检测单元 17检测到 颜色不是附加层的颜色或含有微量的附加层颜色， 则阵列基板 14中的相关 待检测结构没有发生断开型不良。
通常，在阵列基板的制作流程中， 沟道下方的有源层的断开型不良都是 集中发生的， 其它部分则^艮少有相应的不良发生， 所以在光检测单元 17所 接受到的从特定部分反射的过滤后的光也会比较强，从而易于检出该类型的 不良。
另外，也可以将待测的阵列基板 14放在上述测试基台 13上，通过光源 15照射阵列基板 14, 然后测试人员使用带有滤光功能的眼镜（相当于滤光 单元 16 )等工具观测， 该眼镜只透过和附加层相同颜色的光线， 这样就可 以筒便的观测到阵列基板表面的不良发生位置。 相比于上面所述的检测方 法， 更能节省检测时间。
本公开提供了一种检测阵列基板中断开型不良的方法以及相应的装置， 以及一种阵列基板，由此实现了对阵列基板中断开型不良的早期检测。从而， 在生产过程中出现断开型不良时， 可以尽早发现该不良， 并及时实现设备的 调整， 消除不良发生的原因。 该方法解决了设备调整滞后的问题， 使得不良 及时得到改善， 提高生产效率和产品良率。
本公开实施例所述的阵列基板，可应用于显示装置中，显示装置可以为： 比如液晶面板、 液晶电视、 液晶显示器、 电子纸、 数码相框、 手机、 有机发 光二极管显示装置等。
以上实施方式仅用于说明本公开， 而并非对本公开的限制，有关技术领 域的普通技术人员， 在不脱离本公开的精神和范围的情况下， 还可以做出各 种变化和变型， 因此所有等同的技术方案也属于本公开的范畴， 本公开的专 利保护范围应由权利要求限定。

Claims

权利要求
1、 一种阵列基板， 包括设置在基板上的待检测结构， 其特征在于， 所 述待检测结构的下方设置有用于检测待检测结构是否断开的附加层，所述附 加层的颜色与待检测结构的颜色不同并且图案形状一致。
2、 根据权利要求 1所述的阵列基板， 其特征在于， 所述待检测结构为 下述结构的至少一种： 栅极、 栅极扫描线、 数据信号线、 有源层、 源极、 漏 极。
3、 根据权利要求 1或 2所述的阵列基板， 其特征在于， 所述附加层的 上方还设置有透明保护层。
4、 根据权利要求 1-3 中任一所述的阵列基板， 其特征在于， 所述附加 层为铜层、硅的氧化物层、硅的氮化物层和加有染色剂的聚酰亚胺层中的一 种。
5、 根据权利要求 1-4任一所述的阵列基板， 其特征在于， 附加层和透 明保护层的厚度均不大于 500θΑ。
6、 一种用于权利要求 1所述的阵列基板的检测方法， 包括：
向形成有附加层的阵列基板上照射白光； 和
判断由所述阵列基板反射后的反射光的颜色，如果所述反射光的颜色有 附加层的颜色， 则判断对应所述附加层颜色的待检测结构发生断开型不良； 如果所述反射光的颜色没有附加层的颜色，则判断所述待检测结构没有发生 断开型不良。
7、 根据权利要求 6所述的检测方法， 其特征在于
在判断所述反射光的颜色时，在所述反射光的光路上设置一与所述附加 层颜色相同的滤光单元，通过透过滤光单元的光来判断经过所述阵列基板反 射后的光线的颜色。
8、 一种用于权利要求 1所述的阵列基板的检测装置， 其特征在于， 包 括： 测试基台、光源及滤光单元；所述测试基台用于放置待检测的阵列基板， 所述光源为白光光源， 用于向形成有附加层的阵列基板上照射白光， 所述滤 光单元用于过滤与所述附加层颜色不相同的光。
9、 根据权利要求 8所述的检测装置， 其特征在于， 所述滤光单元为与 所述附加层颜色相同的滤光片。
10、根据权利要求 8所述的检测装置，其特征在于，还包括光检测单元， 所述光检测单元用于识别与所述附加层颜色相同的光。
11、 根据权利要求 10所述的检测装置， 其特征在于， 还包括外罩， 所 述光源和所述滤光单元分别位于所述测试基台两侧的上方，且所述光检测单 元位于所述滤光单元的上方， 所述外罩位于检测装置的外侧， 用于容纳所述 测试基台、 光源、 滤光单元和光检测单元。
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