WO2014114242A1 - 一种led发光装置 - Google Patents

一种led发光装置 Download PDF

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Publication number
WO2014114242A1
WO2014114242A1 PCT/CN2014/071154 CN2014071154W WO2014114242A1 WO 2014114242 A1 WO2014114242 A1 WO 2014114242A1 CN 2014071154 W CN2014071154 W CN 2014071154W WO 2014114242 A1 WO2014114242 A1 WO 2014114242A1
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WIPO (PCT)
Prior art keywords
led
carrier
light
emitting device
bearing surface
Prior art date
Application number
PCT/CN2014/071154
Other languages
English (en)
French (fr)
Inventor
朱晓飚
Original Assignee
浙江中宙照明科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 浙江中宙照明科技有限公司 filed Critical 浙江中宙照明科技有限公司
Priority to JP2015554036A priority Critical patent/JP6183470B2/ja
Priority to EP14743894.9A priority patent/EP2950343B1/en
Priority to US14/762,602 priority patent/US9679879B2/en
Publication of WO2014114242A1 publication Critical patent/WO2014114242A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Definitions

  • the present invention relates to LED lighting technology, and in particular to an LED lighting device. Background technique
  • LED Light Emitting Diode
  • LEDs have been applied to many fields due to its energy saving, environmental protection, light weight, long life, small size and stable performance. Especially in the field of lighting, LEDs are used more and more widely and are regarded as one of the main light sources for future lighting.
  • the package of the existing LED light-emitting device usually emits PPA (Polyphthalamide, Polyphthalamide) or engineering plastic on a metal support or a metal substrate to form an optical bowl, and fixes one or more in the optical cup.
  • PPA Polyphthalamide, Polyphthalamide
  • An LED chip is used, and a plurality of LED chips are serially/parallelized inside the optical cup by a metal wire, and then the colloid mixed with the phosphor is filled in the optical cup.
  • the light emitted by the LED chip cannot be outputted through the bracket or the substrate due to the opaqueness of the metal bracket or the metal substrate itself, which results in low light-emitting efficiency of the LED light-emitting device; Moreover, the unoutputted light generates a large amount of heat in the optical cup and the LED wafer has no separate heat conduction path, which causes the heat generated by the LED wafer to be too concentrated, thereby causing the reliability of the LED to decrease linearly.
  • the existing LED illuminators have a light output of only 20%-30% of their energy, and the remaining 70%-80% of the energy is used to generate heat and cannot be utilized. Therefore, how to improve the light-emitting efficiency of LED light-emitting devices, enhance their application functions, and prolong their service life has become an urgent problem to be solved. Summary of the invention
  • the present invention provides an LED light-emitting device which can not only improve the light-emitting efficiency of the LED light-emitting device but also reduce heat generation, thereby having high light-emitting efficiency and being High reliability and long service life.
  • the present invention provides an LED lighting device, comprising: a carrier, which is a transparent body, and is provided with a conductor on a bearing surface of the carrier; a plurality of LED chips, which are eutectic with the conductor Electrically connected to achieve electrical connection between the plurality of LED wafers; an encapsulation structure that is transparent and coated on the periphery of the carrier and the plurality of LED wafers; and a pair of electrodes, The positive electrode/negative electrode of the pair of electrodes is electrically connected to the LED chip of the plurality of LED chips which is the most upstream/most downstream of the current transmission by the conductor and extends to the outside of the encapsulation structure.
  • the number of the LED chips is N
  • the number of the conductors is N+1
  • N is an integer greater than 1
  • the N LED chips are along the extending direction of the pair of electrodes and the N+
  • One conductor is disposed between the two; a solder joint is disposed at both ends of the bonding surface of each of the LED wafers, and correspondingly, solder joints are disposed at both ends of the two conductors adjacent to the LED wafer, and
  • the solder joints of the wafer correspond to the shape of the solder joints; each of the LED wafers and two of the conductors adjacent thereto are soldered by eutectic soldering of the solder joints and the solder joints of the solder joints And electrical connection.
  • the enveloping structural member respectively covers the bearing surface of the carrier and the above fixed surface
  • An LED wafer a surface of the carrier facing away from the bearing surface, and an edge region of both side surfaces of the carrier.
  • two projections extending toward each other are formed on the two consecutively spaced conductors, the two projections being located on both sides of the LED wafer between the two consecutively spaced conductors.
  • the enveloping structure member has a central angle of 180.
  • the cladding angle covers the carrier surface of the carrier and the LED wafer mounted thereon and the surface of the carrier facing away from the carrier surface, respectively, in the circumferential direction.
  • the pair of electrodes is a pair of metal electrode sheets, and each of the metal electrode sheets includes a unitary assembly portion and a connecting portion, wherein the mounting portion is supported by a conductive adhesive and the carrier.
  • the two ends are bonded together, and the binder is eutectic, reflowed or cured at a high temperature.
  • the method is electrically connected to the corresponding conductor; the end portion of the connecting portion of the pair of metal electrode sheets is different in shape from the end portion of the mounting portion.
  • a limiting groove is formed at both ends of the carrier and on the bearing surface thereof, the fitting portion is fixed in the limiting groove by the adhesive, and the adhesive coating An outer surface of the fitting portion located in the limit IHJ slot; or
  • a limiting groove is disposed at an end of the fitting portion away from the connecting portion, both ends of the carrier are fixed in the limiting groove by the adhesive, and the adhesive is coated An outer surface of the carrier located within the limiting recess.
  • the width of the fitting portion is greater than the width of the connecting portion.
  • a transparent and thermally conductive heat dissipation layer is formed between the bearing surface of the carrier and the bonding surface of the LED chip for heat exchange with the LED chip, and the material of the heat dissipation layer comprises silicone rubber and epoxy One or more of a glue, a silicone resin, and a modified resin.
  • the conductor turns are made of a conductive metal material.
  • the present invention has the following beneficial effects:
  • the LED light-emitting device since the light emitted from the LED chip can be output to the outside of the LED light-emitting device through the transparent carrier and the encapsulation structure, the LED light-emitting device can realize multi-dimensional illumination, which is not only It is possible to improve the light-emitting efficiency of the LED light-emitting device, and it is possible to reduce the occurrence of a large amount of heat and the like due to a small amount of light output as described in the background art, thereby improving the reliability of the LED light-emitting device and prolonging the service life thereof.
  • DRAWINGS 1A is a front view of an LED lighting device according to a first embodiment of the present invention
  • FIG. 1B is a cross-sectional view of a carrier in the LED lighting device of FIG. 1A;
  • FIG. 1C is a side view of an LED lighting device according to a first embodiment of the present invention.
  • 1D is a top plan view of an LED lighting device according to a first embodiment of the present invention.
  • FIG. 1E is a plan view of the LED light emitting device of FIG. 1D before assembling the LED chip;
  • FIG. 1F is a schematic view of the bonding surface of the LED chip of the LED light emitting device shown in FIG. 1D;
  • FIG. 1G is a pair of the LED light emitting device shown in FIG. a top view of the connection relationship between the electrode and the carrier;
  • 1H is a front cross-sectional view showing a connection relationship between a pair of electrodes and a carrier of the LED lighting device shown in FIG. 1D;
  • Figure II is a schematic structural view of a pair of electrodes of the LED lighting device shown in Figure 1D;
  • 1J is an optical path diagram of an LED lighting device according to a first embodiment of the present invention.
  • FIG. 2A is a front elevational view showing another encapsulating structural member in the LED lighting device according to the first embodiment of the present invention
  • FIG. 2B is a schematic view showing the positional relationship between the carrier of the LED light-emitting device shown in FIG. 2A and the LED wafer and the encapsulation structure;
  • FIG. 3A is a front view of an LED lighting device according to a second embodiment of the present invention.
  • FIG. 3B is a top view of the LED lighting device according to the second embodiment of the present invention.
  • the invention provides an LED lighting device comprising the following components: a transparent carrier, a plurality of An LED wafer, a transparent encapsulating structure covering the periphery of the carrier and the LED wafer, and a pair of electrodes.
  • a conductor is disposed on the bearing surface of the carrier, and the plurality of LED chips are electrically connected to the conductor ⁇ by eutectic soldering, and are fixed on the bearing surface of the carrier by the conductor.
  • the carrier surface of the carrier refers to the surface on the carrier for mounting the LED wafer.
  • the surface of the carrier is roughened to form a roughened reflective layer having a textured structure, and the carrier of the roughened reflective layer having a textured structure is translucent from the outside.
  • the LED lighting device provided by the present invention, since a plurality of LED chips can be electrically connected by eutectic soldering to a conductor provided on the carrier, electrical connection between the plurality of LED chips can be realized, which can replace the wires.
  • the electrical connection between the plurality of LED chips is realized, thereby not only reducing the manufacturing cost of the LED lighting device, but also eliminating the complicated wire bonding process between the plurality of LED chips, thereby simplifying the manufacturing process of the LED lighting device. .
  • the LED chip which is the most upstream of the current transfer is connected to the positive electrode of the pair of electrodes, and the LED chip which is the most downstream of the current transfer is connected to the negative electrode of the pair of electrodes.
  • the so-called LED chip which is the most upstream of the current transfer refers to the LED chip through which the current flows first in these LED chips; the so-called LED chip which is the most downstream of the current transfer refers to the LED through which the current finally flows in these LED chips. Wafer.
  • the LED wafers at the most upstream/most downstream of the current transmission are not in the same physical position as the LED chips. That is, the LED chips at the physical ends of the LED chips are not necessarily the most upstream of the current transmission. / the most downstream.
  • the LED chip which is the most upstream of the current transfer and the LED chip which is the most downstream of the current transfer are the two of the plurality of LED chips at the ends. Wafers.
  • the above-mentioned conductor may be made of a conductive metal material such as gold, silver or copper, and the conductor may be implemented between a plurality of LED chips, and an LED chip which is at the most upstream of current transmission and which is at the most downstream of current transmission.
  • the LED wafers may be electrically connected to the positive and negative electrodes of the pair of electrodes, respectively, without necessarily limiting the manner and shape in which the conductors are disposed on the carrier.
  • the LED lighting device provided by the present invention
  • light emitted by the LED chip can be transmitted through
  • the transparent carrier and the encapsulating structure are output to the outside of the LED lighting device, so that the LED lighting device can realize multi-dimensional illumination, which can not only improve the light-emitting efficiency of the LED lighting device (in fact, the LED lighting device provided by the present invention)
  • the light-emitting efficiency is 30%-50% higher than that of the conventional LED light-emitting device.
  • the LED lighting device 10 in this embodiment includes: a carrier 11, a plurality of LED wafers 12, an encapsulating structure member 13, and a pair of metal electrode sheets (20a, 20b).
  • the carrier 11 is a transparent body which can be produced by mixing one of a material such as glass, ceramics, plastics or the like or a plurality of materials.
  • the surface of the carrier 11 is roughened to form a roughened reflective layer 28 having a textured structure, which makes the carrier 11 a translucent body as viewed from the outside, as shown in Fig. 1B.
  • the shape of the convex portion in the uneven structure may be semicircular, elliptical, zigzag, triangular or the like.
  • the light emitted from the LED wafer 12 can be reflected by the roughened reflective layer 28 having a concave-convex structure, and the light beams are mutually coupled so that the light output from the LED light-emitting device 10 is uniformly softened.
  • the outer surface of the carrier 11 can be roughened to different degrees according to the light-emitting structure of the different LED chips 12, so that it has different concave-convex structure shapes, recessed depths, and protrusion heights.
  • the four sides of the carrier 11 that is, the four surfaces perpendicular to the paper surface direction in FIG. 1B may be roughened to different extents, or only the bearing surface of the carrier 11 and the carrier 11 may be deviated from the carrier 11 .
  • the surface of the bearing surface is roughened to varying degrees, and it is also possible to roughen only the two sides of the four sides of the carrier 11 except for the bearing surface and the surface facing away from the bearing surface.
  • the number of the LED chips 12 is N, and N+1 conductors 30 are disposed on the bearing surface of the carrier 11, and N is an integer greater than 1, and the N LED wafers 12 are along the metal electrode sheets (20a). , 20b) extending direction is set between N+1 conductors 30, that is, continuous intervals
  • An LED wafer 12 is disposed between the two conductors 30 as shown in FIG. 1D.
  • a wafer pad 41 is disposed at both ends of each of the LED chips 12 and on the bonding surface thereof, as shown in FIG. 1F, correspondingly disposed at both ends of the two conductors 30 adjacent to the LED chip 12.
  • the line pads 31 are as shown in FIG. 1E, and the wafer pads 41 correspond to the shape of the line pads 31.
  • the bonding surface of the LED chip 12 refers to a surface on the LED wafer 12 for bonding with the bearing surface of the carrier 11.
  • Each of the LED chips 12 and the two adjacent conductors 30 are electrically connected by soldering the above-mentioned wafer pads 41 and the line pads 31 by eutectic soldering, thereby electrically connecting the N LED chips 12 , for example, in series, parallel or mixed.
  • the LED wafer 12 is fixed on the carrier 11 by soldering the wafer pads 41 and the line pads 31, that is, the support points of the LED chips 12 on the carrier 11 are located on the conductor 30, which tends to cause LEDs.
  • the bearing surface of the carrier 11 and the LED A transparent and thermally conductive heat dissipation layer 15 is formed between the bonding faces of the wafer 12 for heat exchange with the LED chips 12, so that heat generated by the LED chips 12 is conducted to the outside through the heat dissipation layer 15 and the carrier 11.
  • the material of the heat dissipation layer 15 may include one or more of silica gel, epoxy glue, silicone resin, and modified resin.
  • the plurality of LED chips 12 are all corresponding common monochrome LED chips 12, for example, the plurality of LED chips 12 are all blue light wafers or all of them. Any visible light wafer other than blue light.
  • the plurality of LED chips 12 include a blue LED chip 12 and a red (or yellow) light LED chip 12, and each of the two consecutive blue light intervals The LED wafer 12 is provided with a red (or yellow) light LED chip 12 to achieve sufficient light mixing.
  • the so-called uniform hook distribution refers to a regular distribution, for example, two red LED chips are arranged in a continuous interval, and a red (or yellow) light LED chip is disposed; and the so-called regular distribution is not limited to the above distribution and The interval method can be adjusted and set according to the actual situation.
  • a pair of metal electrode sheets (20a, 20b) are used as the LED light-emitting device 10
  • the positive/negative electrodes are respectively disposed at both ends of the carrier 11 and at least 0.5 mm from the LED chips 12 disposed on both ends of the carrier 11.
  • the metal electrode sheets (20a, 20b) include a joint portion 201 and a joint portion (202a, 202b) which are integrally connected.
  • a limit groove is provided at one end of the mounting portion 201 away from the connecting portion (202a, 202b), and both ends of the carrier 11 are fixed in the limiting groove of the mounting portion 201 by means of a conductive adhesive (26a, 26b)
  • the binder (26a, 26b) is electrically connected to the corresponding conductor 30 by eutectic soldering, reflow soldering or high temperature curing, that is, electrically connected to the conductors 30 provided on both ends of the carrier 11.
  • the adhesive (26a, 26b) can be made of a conductive material such as solder paste or silver paste of high thermal conductivity and high adhesion.
  • the metal electrode sheets (20a, 20b) can be positioned and assembled more accurately and quickly, and the adhesive 26 can be wrapped in the limiting groove.
  • the outer surface of the carrier 11, i.e., the four sides of the carrier 11 in Fig. 1H perpendicular to the paper surface, can increase the connection reliability between the metal electrode sheets (20a, 20b) and the carrier 11.
  • the shape of the end portions of the two connection portions (202a, 202b) of the pair of metal electrode sheets (20a, 20b) away from the mounting portion 201 is designed to have a different shape.
  • the shape of the end portions of the two connecting portions (202a, 202b) away from the mounting portion 201 may be different arbitrary shapes, which are not specifically limited herein.
  • the width of the fitting portion 201 is larger than the width of the connecting portions (202a, 202b), which is more advantageous for the assembly of the metal electrode sheets (20a, 20b).
  • the limiting groove is disposed at the end of the mounting portion 201 away from the connecting portion (202a, 202b), but the invention is not limited thereto, and in practical applications,
  • the limiting groove may be disposed at both ends of the carrier 11 and on the bearing surface thereof, in which case the end portion of the fitting portion 201 remote from the connecting portion (202a, 202b) is fixed at the limit by the above-mentioned adhesive In the groove, and the adhesive covers the outer surface of the mounting portion 201 located in the limiting groove, which can also achieve more accurate and quicker positioning and assembly of the metal electrode sheets (20a, 20b), and increase The connection reliability between the metal electrode sheets (20a, 20b) and the carrier 11.
  • the encapsulation structure 13 is a transparent body and is formed of a transparent glue and a phosphor mixture material, and the encapsulation structure 13 respectively covers the bearing surface of the carrier 11 and the LED chip 12 and the carrier 11 fixed thereon.
  • the surface away from the surface of the bearing surface and the edge regions of the two side surfaces of the carrier 11, in particular, the enveloping structure 13 is composed of two parts which are approximately semi-circular in cross-sectional shape: the first portion 131 is used to coat the carrier
  • the surface of the surface facing away from the bearing surface and the edge regions of the two side surfaces of the carrier 11 i.e., the upper surface of the carrier 11 in Fig.
  • the second portion 132 is used for the package
  • the cross-sectional shape of the encapsulating structural member 13 in the direction perpendicular to the direction in which the metal electrode sheets (20a, 20b) extend may be semicircular, elliptical, square, or the like.
  • the encapsulation structure 13 is formed of a transparent glue and a phosphor mixture material, a portion of the light 50b emitted from the LED wafer 12 can pass through the transparent heat dissipation layer 15, the carrier 11 and the encapsulation structure 13 as shown in FIG. 1J.
  • the LED lighting device 10 provided by the embodiment is mixed by using transparent glue and phosphor
  • the enveloping structure member 13 formed by the composite material covers the edge regions of both side surfaces of the carrier 11, and can prevent the edge of the LED wafer 12 from being directly outputted from the edge regions of the both side surfaces of the carrier 11 to cause the edge. There is a problem of color cast in the area, which in turn ensures that the LED lighting device 10 can output uniform white light to various directions.
  • the LED lighting device 10 provided by the embodiment does not cover the entire surface of the carrier 11 by means of the encapsulation structure 13, the central region of both side surfaces of the carrier 11 is exposed to the encapsulation structure 13 Moreover, this facilitates heat dissipation of the LED chip 12, thereby enabling the LED chip 12 to be adapted to a larger driving current, thereby not only increasing the light output of the single LED wafer 12, but also reducing the manufacturing cost of the LED lighting device. .
  • the enveloping structure 13 respectively covers the bearing surface of the carrier 11 and the LED chip 12 fixed thereon, the surface of the carrier 11 facing away from the bearing surface, and the edge of both side surfaces of the carrier 11.
  • the area but the present invention is not limited thereto.
  • the enveloping structure member 13 can also be used to cover the carrier in a plane perpendicular to the direction in which the metal electrode sheets (20a, 20b) extend at a central angle of 360°. 11.
  • the LED wafer 12 and the mounting portion 201 of the metal electrode sheets (20a, 20b) are completely covered, as shown in Fig. 2A.
  • the encapsulation position of the encapsulation structure 13 may be That is, the arrangement positions of the LED wafer 12 and the carrier 11 are defined as follows: The LED wafer 12 and the carrier 11 are placed at an eccentric position of 1/2 of the encapsulation structure 13, that is, the top light emitting surface of the LED wafer 12 is placed in the envelope The center position of the structural member 13 is as shown in Fig. 2B.
  • the encapsulation position of the enveloping member 13 can be finely adjusted as needed, and is not specifically limited herein.
  • the shape of the cross section of the shape of the encapsulating structural member 13 perpendicular to the extending direction of the metal electrode sheets (20a, 20b) may be a circular shape, a square shape, an elliptical shape, a rhombus shape or the like as long as the encapsulation structure member 13 is provided. It can be 360 in a plane perpendicular to the direction in which the metal electrode sheets (20a, 20b) extend. The coverage of the central corners completely encloses the carrier 11, the LED wafer 12, and the mounting portion 201 of the metal electrode sheets (20a, 20b).
  • the width of the carrier may be wider, and a plurality of rows of LED chips may be disposed on the carrier, and the arrangement of each row of LED chips is similar to that of the above embodiment, and Each row of LED chips can be electrically connected by being electrically connected to the corresponding conductors by eutectic soldering, and finally the LED chips disposed at both ends of the carrier are connected to the metal electrode sheets (20a, 20b) via conductors, so as to be realized. External electrical connection.
  • the length and width of the carrier in the LED lighting device are not limited, and the number of rows of LED chips on the carrier is not limited.
  • the LED lighting device 10 provided by the second embodiment includes a carrier 11, a plurality of LED chips 12, a pair of metal electrode sheets (20a, 20b), and a cladding carrier 11 and a plurality of LED chips. 12 and an encapsulation structure 13 of a pair of metal electrode sheets (20a, 20b).
  • the electrical connection between the plurality of LED chips 12 and between the LED wafer 12 and the metal electrode sheets (20a, 20b), the cross-sectional shape of the encapsulation structure 13, and the like are similar to the first embodiment described above, and are not Let me repeat.
  • two convex portions 32 extending toward each other are formed on the two conductors 30 which are continuous in interval, and two convex portions 32 are located between the two LED chips 12 which are spaced apart between the two conductors 30. Side, as shown in Figure 3B.
  • part of the light emitted from the LED chip 12 can be prevented from being directly outputted from the edge regions of the both side surfaces of the carrier 11, but can be refracted by the blocking of the convex portion 32 to be outputted from other directions, thereby avoiding the LED
  • the light-emitting device 10 exhibits a color cast in the edge regions of both side surfaces of the carrier 11, thereby ensuring that the LED light-emitting device 10 can output the light of the hooks in various directions.
  • the length of the two convex portions 32 between the two consecutively spaced conductors 30 can be maximized without being in contact with the corresponding conductors 30, to maximize The light output from the edge regions of the both side surfaces of the carrier 11 of the LED chip 12 is blocked to a certain extent.
  • the heat dissipation layer 15 should be made of a transparent glue and a phosphor mixture material to ensure the LED chips 12 from both sides of the carrier 11.
  • the light output from the edge region is white light, so that the LED light-emitting device 10 can output uniform white light to various directions.
  • the enveloping structural members 13 respectively cover the bearing surface of the carrier 11 in the circumferential direction at a coating angle of a central angle of 180°.
  • the surface of the LED chip 12 and the carrier 11 which are fixed away from the bearing surface, that is, the enveloping structure 13 is composed of two parts having two semicircular cross-sectional shapes: the first portion 131 is used for coating the carrier The surface of the bearing surface facing away from the bearing surface 11; the second portion 132 is used to cover the bearing surface of the carrier 11 and the LED chip 12 fixed thereon.
  • the enveloping structural member 13 in this embodiment differs from the first embodiment in that: not only the central region of both side surfaces of the carrier 11 is exposed outside the enveloping structural member 13, but also the carrier The edge regions of the both side surfaces of the 11 are also exposed outside the enveloping structure member 13, that is, both side surfaces of the carrier 11 are completely exposed to the enveloping structure member 13, and since the above-mentioned convex portion 32 can be prevented
  • a part of the light emitted from the LED chip 12 is directly output from the edge regions of the both side surfaces of the carrier 11, it is possible to further improve the LED wafer 12 on the basis of ensuring that the LED light-emitting device 10 can output uniform light to various directions. Cooling efficiency.
  • the encapsulation structure 13 since the encapsulation structure 13 only needs to cover the bearing surface of the carrier 11 and the LED chip 12 fixed thereon and the surface of the carrier 11 facing away from the bearing surface, this simplifies the structure of the encapsulation structure 13 to a certain extent. Thereby, the manufacturing process of the encapsulating structural member 13 can be simplified, and the processing cost of the LED lighting device 10 can be reduced to some extent.
  • a transparent heat dissipating layer, encapsulating structure, and/or carrier means that light emitted by the LED wafer can penetrate the heat dissipating layer, the encapsulating structure, and/or the carrier.

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Abstract

一种LED发光技术，具体提供一种LED发光装置，其包括：载体（11）,其为透明体且在该载体（11）的承载面上设置有导体（30）；多个LED晶片（12），其与该导体（30）采用共晶焊的方式电连接，以实现多个该LED晶片（12）之间的电性连接；包封结构件（13），其为透明体且包覆在该载体（11）禾!］LED晶片（12）的外围；以及一对电极（20a、20b），该一对电极（20a、20b）中的正电极/负电极借助该导体（30）与该多个LED晶片（12）中处于电流传输最上游/最下游的LED晶片（12）电性连接，并延伸至该包封结构件（13）的外部。提供的LED发光装置，不仅能够提高LED发光装置的出光效率，而且能够减少热量的产生，因而具有出光效率高、可靠性高以及使用寿命长等特点。

Description

一种 LED发光装置 技术领域
本发明涉及 LED发光技术， 具体涉及一种 LED发光装置。 背景技术
LED ( Light Emitting Diode,发光二极管）因其具有节能、环保、重量轻、 寿命长、 体积小、 性能稳定等诸多优点， 已被应用到很多领域。 尤其是在照 明领域， LED更是应用得越来越广泛， 并被视为未来照明的主要光源之一。
现有的 LED发光装置的封装，通常是在金属支架或金属基板上射出 PPA ( Polyphthalamide, 聚邻苯二曱酰胺）或工程塑料， 形成一个光学碗杯， 在 光学碗杯内固定 1个或多个 LED晶片，且通过金属导线在光学碗杯内部使多 个 LED晶片串 /并联， 然后在光学碗杯内填充混有荧光粉的胶体。 釆用这种 封装形式的 LED发光装置， 因金属支架或金属基板本身不透光而使得 LED 晶片发出的光不能透过支架或基板向外输出，这导致该 LED发光装置的出光 效率较低； 而且， 未输出的光会在光学碗杯内产生大量的热且 LED晶片无单 独的导热通道， 这使得 LED晶片产生的热量过于集中， 进而导致 LED的可 靠性呈线性规律下降。事实上，现有的 LED发光装置的光输出量仅占其产生 能量的 20%-30%, 剩余的 70%-80%的能量全部用来产生热量而未能被利用。 因此 ,如何提高 LED发光装置的出光效率、增强其应用功能以及延长其使用 寿命就成为人们亟待解决的问题。 发明内容
为解决上述问题，本发明提供一种 LED发光装置，其不仅能够提高 LED 发光装置的出光效率， 而且能够减少热量的产生， 因而具有出光效率高、 可 靠性高以及使用寿命长等特点。
为此， 本发明提供一种 LED发光装置， 包括： 载体， 其为透明体， 并 且在所述载体的承载面上设置有导体； 多个 LED晶片， 其与所述导体釆用共 晶焊的方式电连接，以实现多个所述 LED晶片之间的电性连接；包封结构件， 其为透明体且包覆在所述载体和所述多个 LED晶片的外围； 以及一对电极， 所述一对电极中的正电极 /负电极借助所述导体与所述多个 LED晶片中处于 电流传输最上游 /最下游的 LED晶片电连接， 并延伸至所述包封结构件的外 部。
其中， 所述 LED晶片的数量为 N, 所述导体的数量为 N+1 , 且 N为大 于 1的整数，并且所述 N个 LED晶片沿所述一对电极的延伸方向与所述 N+1 个导体相间设置； 在每个所述 LED晶片的结合面的两端设置有晶片焊点，对 应地在与该 LED晶片相邻的两个所述导体的两端设置有线路焊点，并且所述 晶片焊点与线路焊点的形状相对应；每个所述 LED晶片和与之相邻的两个所 述导体通过将所述晶片焊点和线路焊点釆用共晶焊的方式焊接而电连接。
其中， 所述包封结构件分别包覆所述载体的承载面及其上固定的所述
LED晶片、 所述载体的背离所述承载面的表面以及所述载体的两侧表面的边 缘区域。
优选地， 在间隔连续的两个所述导体上形成有朝向彼此延伸的两个凸 部， 所述两个凸部位于间隔连续的两个所述导体之间的所述 LED 晶片的两 侧。
其中， 在垂直于所述一对电极的延伸方向的截面内， 所述包封结构件以 圓心角为 180。 的包覆角度在周向方向上分别包覆所述载体的承载面及其上 固定的所述 LED晶片以及所述载体的背离所述承载面的表面。
其中， 所述一对电极为一对金属电极片， 每个所述金属电极片包括连为 一体的装配部和连接部 , 其中所述装配部借助导电的粘结剂与所述载体的承 载面的两端粘结在一起， 并且所述粘结剂釆用共晶焊、 回流焊或高温固化的 方式与相应的所述导体电连接； 所述一对金属电极片的连接部的远离所述装 配部的端部形状不同。
优选地， 在所述载体的两端且位于其承载面上形成有限位凹槽， 所述装 配部借助所述粘结剂固定在所述限位凹槽内， 并且所述粘结剂包覆位于所述 限位 IHJ槽内的所述装配部的外表面； 或者
在所述装配部的远离所述连接部的端部设置有限位凹槽， 所述载体的两 端借助所述粘结剂固定在所述限位凹槽内， 并且所述粘结剂包覆位于所述限 位凹槽内的所述载体的外表面。
优选地， 所述装配部的宽度大于所述连接部的宽度。
其中， 在所述载体的承载面与所述 LED 晶片的结合面之间形成有透明 且导热的散热层，用以与所述 LED晶片进行热交换， 所述散热层的材料包括 硅胶、 环氧胶、 硅树脂和改性树脂中的一种或多种。
其中， 所述导体釆用导电的金属材料制作。
相对于现有技术， 本发明具有下述有益效果：
在本发明提供的 LED发光装置中， 由于 LED晶片所发出的光能够透过 透明的载体和包封结构件而输出到该 LED发光装置的外部， 因此该 LED发 光装置能够实现多维发光，这不仅能够提高 LED发光装置的出光效率， 而且 能够减少背景技术中所述的因光输出量少而产生大量的热等不良现象， 从而 提高该 LED发光装置的可靠性、 延长其使用寿命。
另外， 由于多个 LED 晶片可以通过与设置在载体上的导体釆用共晶焊 的方式电连接而实现多个 LED晶片之间的电性连接，这可以代替导线实现多 个 LED晶片之间的电性连接，从而不仅可以降低 LED发光装置的制造成本， 而且还可以省去较复杂的多个 LED晶片之间的导线连接工艺，进而简化 LED 发光装置的制造工艺。 附图说明 图 1A为本发明第一实施例提供的 LED发光装置的主视图； 图 1B为图 1A所示 LED发光装置中的载体的剖面图；
图 1C为本发明第一实施例提供的 LED发光装置的侧视图；
图 1D为本发明第一实施例提供的 LED发光装置的俯视图；
图 1E为图 1D所示 LED发光装置在装配 LED晶片之前的俯视图； 图 1F为图 1D所示 LED发光装置的 LED晶片的结合面的示意图； 图 1G为图 1D所示 LED发光装置的一对电极与载体之间的连接关系的 俯视图；
图 1H为图 1D所示 LED发光装置的一对电极与载体之间的连接关系的 主视剖面图；
图 II为图 1D所示 LED发光装置的一对电极的结构示意图；
图 1J为本发明第一实施例提供的 LED发光装置的光路图；
图 2A为本发明第一实施例提供的 LED发光装置中的另一种包封结构件 的主视图；
图 2B为图 2A所示 LED发光装置的载体和 LED晶片与包封结构件之间 的位置关系的示意图；
图 3A为本发明第二实施例提供的 LED发光装置的主视图； 以及 图 3B为本发明第二实施例提供的 LED发光装置的俯视图。 具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案， 下面结合附图进 一步详细说明用于实施本发明的优选方式。 但以下所示的实施例， 是用于对 本发明提供的 LED发光装置的技术思路进行具体化，并非用于对本发明的发 明思路进行限定。 并且， 各附图所示的构件大小和位置关系等， 仅是为了使 说明更加明确才有所放大夸张，而并非用于限定实际的构件大小和比例关系。
本发明提供了一种 LED发光装置， 其包括以下组件： 透明的载体、 多 个 LED晶片、 包覆在载体和 LED晶片的外围且透明的包封结构件以及一对 电极。 其中， 在载体的承载面上设置有导体， 多个 LED晶片与该导体釆用共 晶焊的方式电连接，并借助导体固定在载体的承载面上。所谓载体的承载面， 指的是该载体上的用于设置 LED晶片的表面。优选地， 载体的表面经粗化处 理而形成有呈凹凸结构的粗化反射层， 带有凹凸结构的粗化反射层的载体从 外观看呈半透明。
在本发明提供的 LED发光装置中， 由于多个 LED晶片可以通过与设置 在载体上的导体釆用共晶焊的方式电连接而实现多个 LED 晶片之间的电性 连接，这可以代替导线实现多个 LED晶片之间的电性连接，从而不仅可以降 低 LED发光装置的制造成本， 而且还可以省去较复杂的多个 LED晶片之间 的导线连接工艺， 进而简化 LED发光装置的制造工艺。
在上述多个 LED晶片中， 处于电流传输最上游的 LED晶片与上述一对 电极中的正电极相连，处于电流传输最下游的 LED晶片与上述一对电极中的 负电极相连。 所谓处于电流传输最上游的 LED晶片指的是在这些 LED晶片 中电流首先流经的那个 LED晶片； 所谓处于电流传输最下游的 LED晶片指 的是在这些 LED晶片中电流最后流经的那个 LED晶片。 事实上， 处于电流 传输最上游 /最下游的 LED晶片与 LED晶片物理上的设置位置并不一致，即， 这些 LED晶片中， 在物理位置上处于最两端的 LED晶片未必是电流传输上 的最上游 /最下游。 只有当多个 LED晶片按照其设置位置依次通过导体进行 电性连接时，处于电流传输最上游的 LED晶片和处于电流传输最下游的 LED 晶片才为多个 LED晶片中的处于端部的那两个晶片。此外， 上述导体可以釆 用导电的金属材料制作， 例如金、 银或铜等， 并且该导体只要能够实现多个 LED晶片之间， 以及处于电流传输最上游的 LED晶片和处于电流传输最下 游的 LED晶片分别与一对电极中的正电极和负电极之间的电性连接即可，而 不必限制导体设置在载体上的方式和形状。
在本发明提供的 LED发光装置中， 由于 LED晶片所发出的光能够透过 透明的载体和包封结构件而输出到该 LED发光装置的外部， 因此该 LED发 光装置能够实现多维发光，这不仅能够提高 LED发光装置的出光效率（事实 上， 本发明提供的 LED发光装置的出光效率比现有 LED发光装置的出光效 率高出 30%-50% )； 而且能够减少背景技术中所述的因光输出量少而产生大 量的热等不良现象， 从而提高该 LED发光装置的可靠性、 延长其使用寿命。 第一实施例
请一并参阅图 1A至图 1J,其中示出了本发明第一实施例提供的 LED发 光装置的结构。 本实施例中的 LED发光装置 10包括： 载体 11、 多个 LED晶 片 12、 包封结构件 13 以及一对金属电极片 （20a、 20b )。 其中， 载体 11为 透明体， 其可以釆用玻璃、 陶瓷、 塑料等材料中的其中一种材料或多种材料 的混合进行制作。 而且，载体 11的表面经粗化处理形成具有凹凸结构的粗化 反射层 28, 这使载体 11从外观看呈半透明体， 如图 1B所示。 并且， 在粗化 反射层 28的纵截面（即， 垂直于纸面方向得到的截面）中， 凹凸结构中的凸 起部分的形状可以是半圓形、 椭圓形、 锯齿形、 三角形等。 借助具有凹凸结 构的粗化反射层 28可以将 LED晶片 12发出的光进行反射，并且进行光束互 耦， 以使得该 LED发光装置 10输出的光均匀柔和。 在实际应用中， 可以根 据不同 LED晶片 12的发光结构， 将载体 11的外表面进行不同程度的粗化， 使其具有不同的凹凸结构形状、 凹进深度和凸起高度等。 在实际应用中， 可 以对载体 11的四个侧面， 即， 图 1B中垂直于纸面方向的四个表面进行不同 程度的粗化， 也可以仅对载体 11的承载面和载体 11的背离其承载面的表面 进行不同程度的粗化，还可以仅对载体 11的上述四个侧面中除了其承载面和 背离该承载面的表面之外的两个侧面进行不同程度的粗化。
本实施例中， LED晶片 12的数量为 N, 并且在载体 11的承载面上设置 有 N+1个导体 30, 且 N为大于 1的整数， 并且 N个 LED晶片 12沿金属电 极片 ( 20a、 20b )延伸方向与 N+1个导体 30相间设置， 即， 每间隔连续的 两个导体 30之间设置有一个 LED晶片 12,如图 1D所示。而且，在每个 LED 晶片 12的两端且位于其结合面上设置有晶片焊点 41 , 如图 1F所示， 对应地 在与该 LED晶片 12相邻的两个导体 30的两端设置有线路焊点 31 , 如图 1E 所示， 并且晶片焊点 41与线路焊点 31的形状相对应。 所谓 LED晶片 12的 结合面是指 LED晶片 12上用于与载体 11的承载面相结合的表面。每个 LED 晶片 12和与之相邻的两个导体 30通过将上述晶片焊点 41和线路焊点 31釆 用共晶焊的方式焊接而电连接， 从而使 N个 LED晶片 12实现电性连接， 例 如， 串联、 并联或混联。
此外， 由于 LED晶片 12是通过将晶片焊点 41和线路焊点 31焊接在一 起而固定在载体 11上， 即， LED晶片 12在载体 11上的支撑点位于导体 30 上， 这往往会导致 LED晶片 12的结合面与载体 11的承载面之间存在间隙， 换言之， LED晶片 12悬空在载体 11的承载面上方， 从而不利于 LED晶片 12的散热， 为此， 在载体 11的承载面与 LED晶片 12的结合面之间形成有 透明且导热的散热层 15, 用以与 LED晶片 12进行热交换， 从而使 LED晶 片 12产生的热量经由散热层 15和载体 11传导至外界。 散热层 15的材料可 以包括硅胶、 环氧胶、 硅树脂和改性树脂中的一种或多种。
在实际应用中， 当 LED发光装置 10为普通单色光的发光装置时， 多个 LED晶片 12全部为相应的普通单色 LED晶片 12, 例如， 多个 LED晶片 12 全部为蓝光晶片或者全部为蓝光以外的任一可见光晶片。 当 LED发光装置 10为高光效、 高显色指数的发光装置时， 多个 LED晶片 12包括蓝光的 LED 晶片 12和红色（或黄色）光的 LED晶片 12, 并且每间隔连续的两个蓝光的 LED晶片 12而设置一个红色（或黄色）光的 LED晶片 12, 以实现充分的混 光。在此所谓均勾分布指的是有规律的分布，例如，间隔连续的两个蓝色 LED 晶片而设置一个红色（或黄色）光 LED晶片； 并且所谓有规律的分布并不局 限于上述分布与间隔方式， 而是可以根据实际情况进行调整与设定。
本实施例中， 一对金属电极片 （20a、 20b )用以作为 LED发光装置 10 的正 /负电极，分别设置在载体 11的两端并与设置在载体 11的两端上的 LED 晶片 12相距至少 0.5mm。 具体地， 金属电极片 （20a、 20b ) 包括连为一体的 装配部 201和连接部（ 202a、 202b )。其中，在装配部 201的远离连接部（ 202a、 202b )的一端设置有限位凹槽，载体 11的两端借助导电的粘结剂（26a、 26b ) 固定在装配部 201的限位凹槽内， 并且粘结剂 （26a、 26b )釆用共晶焊、 回 流焊或高温固化的方式与相应的导体 30电连接， 即， 与设置在载体 11的两 端上的导体 30电连接。 粘结剂（26a、 26b )可以釆用锡膏或高导热高粘合力 的银胶等的导电材料制作。借助于装配部 201的限位凹槽，不仅可以更准确、 更快捷地对金属电极片 （20a、 20b )进行定位与装配， 而且还可以使粘结剂 26包覆位于限位凹槽内的载体 11的外表面， 即， 图 1H中载体 11的垂直于 纸面方向的四个侧面， 从而可以增加金属电极片 （20a、 20b )与载体 11之间 的连接可靠性。
而且， 为了识别 LED发光装置 10两端的极性， 将上述一对金属电极片 ( 20a, 20b ) 的两个连接部 （202a、 202b ) 的远离装配部 201的端部形状设 计为不同的形状， 以作为 LED发光装置 10两端的极性标识， 如图 II所示。 在实际应用中， 两个连接部 （202a、 202b ) 的远离装配部 201的端部形状可 以为不同的任意形状， 在此不作具体的限定。 此外， 优选地， 装配部 201的 宽度大于连接部（202a、 202b )的宽度， 这更有利于金属电极片 （20a、 20b ) 的装配。
需要说明的是， 虽然在本实施例中， 限位凹槽是设置在装配部 201的远 离连接部（202a、 202b )的端部， 但是本发明并不局限于此， 在实际应用中， 还可以将限位凹槽设置在载体 11的两端且位于其承载面上， 在这种情况下， 装配部 201的远离连接部（202a、 202b ) 的端部借助上述粘结剂固定在限位 凹槽内， 并且粘结剂包覆位于限位凹槽内的装配部 201的外表面， 这同样可 以实现更准确、 更快捷地对金属电极片 （20a、 20b )进行定位与装配， 以及 增加金属电极片 （20a、 20b )与载体 11之间的连接可靠性。 此外， 在实际应用中， 也可以不在载体 11 的承载面的两端或者装配部 201 的远离连接部 （202a、 202b ) 的端部设置限位凹槽， 而仅借助导电的粘 结剂 （26a、 26b )将金属电极片 （20a、 20b ) 固定在载体 11的承载面上， 且 釆用共晶焊、 回流焊或高温固化的方式与相应的导体电连接， 或者， 还可以 在载体 11 的承载面的两端设置方形台阶或梯形台阶等的限位结构， 以更准 确、 快捷地对金属电极片 （20a、 20b )进行定位。
本实施例中， 包封结构件 13 为透明体， 且由透明胶和荧光粉混合物材 料形成，并且包封结构件 13分别包覆载体 11的承载面及其上固定的 LED晶 片 12、 载体 11的背离承载面的表面以及载体 11的两侧表面的边缘区域， 具 体地， 包封结构件 13采用由两个横截面形状近似为半圓形的两部分组成： 第 一部分 131用于包覆载体 11的背离承载面的表面以及载体 11的两侧表面的 边缘区域（即，图 1 A中载体 11的上表面和与之相邻的两个侧面的上部区域）； 第二部分 132用于包覆载体 11的承载面及其上固定的 LED晶片 12以及载体 11的两侧表面的边缘区域（即， 图 1A中载体 11的下表面和与之相邻的两个 侧面的下部区域）。在实际应用中，包封结构件 13在垂直于金属电极片（20a、 20b )延伸方向上的截面形状可以为半圓形、 椭圓形、 方形等。
由于包封结构件 13由透明胶和荧光粉混合物材料形成， 因此， 如图 1J 所示， LED晶片 12所发出的一部分光 50b能够透过透明的散热层 15、 载体 11和包封结构件 13而输出到该 LED发光装置 10的外部， 并且 LED晶片 12 发出的另一部分光 50a能够透过透明的包封结构件 13而输出到该 LED发光 装置 10的外部， 从而实现多维发光； 并且当 LED晶片 12为蓝光 LED晶片 时，其所发出的一部分光 50b通过透过散热层 15、载体 11和包封结构件 13 , 且激发包封结构件 13中的荧光粉而向外输出白色光，其所发出的另一部分光 50a通过透过包封结构件 13且激发包封结构件 13中的荧光粉而向外输出白 色光， 从而能够向外输出均匀的白色光。
此外， 本实施例提供的 LED发光装置 10通过借助由透明胶和荧光粉混 合物材料形成的包封结构件 13将载体 11的两侧表面的边缘区域包覆住， 可 以防止因 LED晶片 12发出的一部分光直接自载体 11的两侧表面的边缘区域 输出而导致该边缘区域出现偏色的问题， 进而可以保证 LED发光装置 10能 够向各个方位输出均匀的白色光。 而且， 由于本实施例提供的 LED发光装置 10并未借助包封结构件 13将载体 11的全部表面包覆住， 而是将载体 11的 两侧表面的中心区域暴露在包封结构件 13之夕卜，这有利于 LED晶片 12的散 热， 从而可以使 LED晶片 12能够适用于更大的驱动电流， 进而不仅可以提 高单个 LED晶片 12的光输出量，而且还可以降低 LED发光装置的制造成本。
需要说明的是， 在本实施例中， 包封结构件 13分别包覆载体 11的承载 面及其上固定的 LED晶片 12、 载体 11的背离承载面的表面以及载体 11的 两侧表面的边缘区域， 但是本发明并不局限于此， 在实际应用中， 还可以使 包封结构件 13在垂直于金属电极片 （20a、 20b )延伸方向的平面内以 360° 圓心角的覆盖范围将载体 11、 LED晶片 12以及金属电极片 （20a、 20b ) 的 装配部 201完全包覆， 如图 2A所示。 进一步地， 为防止因 LED晶片 12不 同发光面所发出的光的强弱不同而激发包封结构件 13 内的荧光粉发出的光 的颜色不一致， 可以对包封结构件 13的包封位置（即， LED晶片 12和载体 11的设置位置）作如下限定： 使 LED晶片 12和载体 11处于包封结构件 13 的 1/2的偏心位置， 即， 使 LED晶片 12的顶部发光面位于包封结构件 13的 中心位置， 如图 2B所示。 当然， 当所要发出的光的颜色作变更时， 其包封 结构件 13的包封位置可根据需要作相应的细微调整， 在此不作明确的限定。 此外， 包封结构件 13的形状沿垂直于金属电极片 （20a、 20b )延伸方向而得 到的截面的形状可以为圓形、 方形、 椭圓形、 菱形等形状， 只要该包封结构 件 13能够在垂直于金属电极片 （20a、 20b )延伸方向的平面内以 360。 圓心 角的覆盖范围将载体 11、 LED晶片 12以及金属电极片 （20a、 20b ) 的装配 部 201完全包覆即可。
还需要说明的是， 在本实施例中， 仅在载体 11上设置有一排 LED晶片 12, 但是本发明并不局限于此， 在实际应用中， 载体的宽度可以更宽， 并且 可以在载体上设置多排 LED晶片， 每一排 LED晶片的装置方式与上述实施 例相类似，且各排 LED晶片可以通过与相应的导体釆用共晶焊的方式电连接 而实现电性连接，最后由设置在载体两端的 LED晶片经由导体连接到金属电 极片 （20a、 20b ), 以便于实现对外的电性连接。 在实际应用中， 对 LED发 光装置中的载体的长度和宽度不作限定，并且对于载体上的 LED晶片的排数 也不作限定。 第二实施例
请参阅图 3A和图 3B, 其中示出本发明第二实施例提供的 LED发光装 置的结构。 类似于前述第一实施例， 第二实施例提供的 LED发光装置 10包 括载体 11、 多个 LED晶片 12、 一对金属电极片 （20a、 20b ) 以及用于包覆 载体 11、多个 LED晶片 12和一对金属电极片（20a、 20b )的包封结构件 13。 多个 LED晶片 12彼此之间以及 LED晶片 12与金属电极片 （ 20a、 20b )之 间的电性连接方式、 包封结构件 13的截面形状等均类似于前述第一实施例， 在此不再赘述。
下面详细说明第二实施例不同于第一实施例的部分。
在第二实施例中， 在间隔连续的两个导体 30上形成有朝向彼此延伸的 两个凸部 32, 并且两个凸部 32位于间隔连续的两个导体 30之间的 LED晶 片 12的两侧， 如图 3B所示。 借助凸部 32, 可以防止 LED晶片 12发出的一 部分光直接自载体 11的两侧表面的边缘区域输出， 而是可以经由凸部 32的 阻挡而发生折射， 以自其它方位输出， 从而可以避免 LED发光装置 10在载 体 11的两侧表面的边缘区域出现偏色的情况，进而保证 LED发光装置 10能 够向各个方位输出均勾的光。 优选地， 两个凸部 32在间隔连续的两个导体 30之间的长度可以在不与相应的导体 30相接触的前提下尽量增长， 以最大 程度地阻挡 LED晶片 12自载体 11的两侧表面的边缘区域输出的光。 此外， 当 LED晶片 12为蓝光或蓝光和红光的混合光的 LED晶片时， 散热层 15应 釆用由透明胶和荧光粉混合物材料制作，以保证 LED晶片 12自载体 11的两 侧表面的边缘区域输出的光为白色光， 从而可以保证 LED发光装置 10能够 向各个方位输出均匀的白色光。
本实施例中， 在垂直于金属电极片 （20a、 20b )延伸方向的截面内， 包 封结构件 13以圓心角为 180° 的包覆角度在周向方向上分别包覆载体 11的 承载面及其上固定的 LED晶片 12以及载体 11的背离承载面的表面， 即， 包 封结构件 13 釆用由两个横截面形状为半圓形的两部分组成： 第一部分 131 用于包覆载体 11的背离承载面的表面； 第二部分 132用于包覆载体 11的承 载面及其上固定的 LED晶片 12。 由此可知， 本实施例中的包封结构件 13与 第一实施例相比，二者的区别在于： 不仅载体 11的两侧表面的中心区域暴露 在包封结构件 13之外， 而且载体 11的两侧表面的边缘区域也暴露在包封结 构件 13之外，也就是说，载体 11的两侧表面完全暴露在包封结构件 13之夕卜， 而且，由于上述凸部 32可以防止出现 LED晶片 12发出的一部分光直接自载 体 11的两侧表面的边缘区域输出的情况， 因而可以在保证 LED发光装置 10 能够向各个方位输出均匀的光的基础上， 实现进一步提高 LED晶片 12的散 热效率。 此外， 由于包封结构件 13仅需包覆载体 11的承载面及其上固定的 LED晶片 12以及载体 11的背离承载面的表面， 这在一定程度上简化了包封 结构件 13的结构， 从而可以简化包封结构件 13的制作过程， 进而可以在一 定程度上降低 LED发光装置 10的加工成本。
可以理解的是， 在实际应用中， 可以根据实际需要确定是否使散热层、 包封结构件和 /或载体中包含荧光粉。 另外， 在本申请中， 透明的散热层、 包 封结构件和 /或载体是指 LED晶片发出的光能够穿透散热层、 包封结构件和 / 或载体。
还可以理解的是， 以上实施方式仅仅是为了说明本发明的原理而釆用的 示例性实施方式， 然而本发明并不局限于此。 对于本领域内的普通技术人员 而言， 在不脱离本发明的精神和实质的情况下， 可以做出各种变型和改进， 这些变型和改进也视为本发明的保护范围。

Claims

利 要 求 书
1. 一种 LED发光装置， 其特征在于， 包括：
载体， 其为透明体， 并且在所述载体的承载面上设置有导体； 多个 LED 晶片， 其与所述导体釆用共晶焊的方式电连接， 以实现多个 所述 LED晶片之间的电性连接；
包封结构件， 其为透明体且包覆在所述载体和所述多个 LED 晶片的外 围； 以及 LED晶片中处于电流传输最上游 /最下游的 LED晶片电连接， 并延伸至所述 包封结构件的外部。
2. 根据权利要求 1所述的 LED发光装置， 其特征在于， 所述 LED晶片 的数量为 N, 所述导体的数量为 N+1 , 且 N为大于 1的整数， 并且所述 N个 LED晶片沿所述一对电极的延伸方向与所述 N+1个导体相间设置；
在每个所述 LED 晶片的结合面的两端设置有晶片焊点， 对应地在与该 LED晶片相邻的两个所述导体的两端设置有线路焊点， 并且所述晶片焊点与 线路焊点的形状相对应；
每个所述 LED 晶片和与之相邻的两个所述导体通过将所述晶片焊点和 线路焊点釆用共晶焊的方式焊接而电连接。
3. 根据权利要求 2所述的 LED发光装置， 其特征在于， 所述包封结构 件分别包覆所述载体的承载面及其上固定的所述 LED晶片、所述载体的背离 所述承载面的表面以及所述载体的两侧表面的边缘区域。
4. 根据权利要求 2所述的 LED发光装置， 其特征在于， 在间隔连续的 两个所述导体上形成有朝向彼此延伸的两个凸部， 所述两个凸部位于间隔连 续的两个所述导体之间的所述 LED晶片的两侧。
5. 根据权利要求 4所述的 LED发光装置， 其特征在于， 在垂直于所述 一对电极的延伸方向的截面内， 所述包封结构件以圓心角为 180° 的包覆角 度在周向方向上分别包覆所述载体的承载面及其上固定的所述 LED 晶片以 及所述载体的背离所述承载面的表面。
6. 根据权利要求 1所述的 LED发光装置， 其特征在于， 所述一对电极 为一对金属电极片， 每个所述金属电极片包括连为一体的装配部和连接部， 其中
所述装配部借助导电的粘结剂与所述载体的承载面的两端粘结在一起， 并且所述粘结剂釆用共晶焊、 回流焊或高温固化的方式与相应的所述导体电 连接；
所述一对金属电极片的连接部的远离所述装配部的端部形状不同。
7. 根据权利要求 6所述的 LED发光装置， 其特征在于， 在所述载体的 两端且位于其承载面上形成有限位凹槽， 所述装配部借助所述粘结剂固定在 所述限位凹槽内， 并且所述粘结剂包覆位于所述限位凹槽内的所述装配部的 外表面； 或者
在所述装配部的远离所述连接部的端部设置有限位凹槽， 所述载体的两 端借助所述粘结剂固定在所述限位凹槽内， 并且所述粘结剂包覆位于所述限 位凹槽内的所述载体的外表面。
8. 根据权利要求 6所述的 LED发光装置， 其特征在于， 所述装配部的 宽度大于所述连接部的宽度。
9. 根据权利要求 1所述的 LED发光装置， 其特征在于， 在所述载体的 承载面与所述 LED晶片的结合面之间形成有透明且导热的散热层，用以与所 述 LED晶片进行热交换， 所述散热层的材料包括硅胶、 环氧胶、硅树脂和改 性树脂中的一种或多种。
10. 根据权利要求 1所述的 LED发光装置， 其特征在于， 所述导体釆用 导电的金属材料制作。
PCT/CN2014/071154 2013-01-22 2014-01-22 一种led发光装置 WO2014114242A1 (zh)

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