WO2014111664A1 - Procede d'obtention d'un substrat muni d'un revêtement - Google Patents
Procede d'obtention d'un substrat muni d'un revêtement Download PDFInfo
- Publication number
- WO2014111664A1 WO2014111664A1 PCT/FR2014/050090 FR2014050090W WO2014111664A1 WO 2014111664 A1 WO2014111664 A1 WO 2014111664A1 FR 2014050090 W FR2014050090 W FR 2014050090W WO 2014111664 A1 WO2014111664 A1 WO 2014111664A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- coating
- substrate
- heat treatment
- heating means
- measurement
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 117
- 238000000576 coating method Methods 0.000 title claims abstract description 112
- 239000011248 coating agent Substances 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims abstract description 42
- 230000008569 process Effects 0.000 title abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 136
- 238000005259 measurement Methods 0.000 claims abstract description 31
- 229910052709 silver Inorganic materials 0.000 claims description 31
- 239000004332 silver Substances 0.000 claims description 31
- 238000010521 absorption reaction Methods 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 15
- 230000006978 adaptation Effects 0.000 claims description 11
- 238000011144 upstream manufacturing Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 4
- 239000002241 glass-ceramic Substances 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 29
- 230000005855 radiation Effects 0.000 description 27
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 19
- 239000007789 gas Substances 0.000 description 18
- 238000000151 deposition Methods 0.000 description 17
- 230000008021 deposition Effects 0.000 description 17
- 210000002381 plasma Anatomy 0.000 description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 12
- 239000011135 tin Substances 0.000 description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 10
- 235000014692 zinc oxide Nutrition 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 229910052718 tin Inorganic materials 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000009434 installation Methods 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 7
- 229910001887 tin oxide Inorganic materials 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000003570 air Substances 0.000 description 5
- 238000012937 correction Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000009736 wetting Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 238000007669 thermal treatment Methods 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 238000000265 homogenisation Methods 0.000 description 3
- 230000001976 improved effect Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000001699 photocatalysis Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 230000016571 aggressive behavior Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000003345 natural gas Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 102000002151 Microfilament Proteins Human genes 0.000 description 1
- 108010040897 Microfilament Proteins Proteins 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical group C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000004579 marble Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 210000003632 microfilament Anatomy 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000008247 solid mixture Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
- JRFBNCLFYLUNCE-UHFFFAOYSA-N zinc;oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Zn+2] JRFBNCLFYLUNCE-UHFFFAOYSA-N 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
- C23C14/5813—Thermal treatment using lasers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to the heat treatment of substrates with coatings.
- the object of the invention is to improve this type of process, by making it more flexible and even better adapted to an industrial context.
- the subject of the invention is a process for obtaining a substrate provided on at least one of its faces with a coating, in which said coating is deposited on said substrate and then said coating is thermally treated.
- using at least one heating means in relation to which the substrate is moving the process being such that before the heat treatment, at least one of at least one property of said coating is made on the moving substrate and the conditions of the heat treatment are adapted according to the measurement previously obtained.
- the coating is thermally treated with at least two heating means controllable independently of each other and with respect to which the substrate passes, each heating means treating a different zone of said coating, the method being furthermore as before the heat treatment, at least one measurement of at least one property of said coating is carried out on the moving substrate and for each of said zones, and the conditions of the heat treatment of each zone according to the measurement previously obtained for the zone in question.
- the subject of the invention is also a device for the thermal treatment of a coating deposited on a substrate, comprising at least one heating means in relation to which the substrate can pass, at least one means for measuring at least one property of said substrate. coating, disposed upstream of the or each heating means, and means for adapting the conditions of the heat treatment according to the measurement previously obtained.
- the device comprises at least two independently controllable heating means with respect to which the substrate can move, each heating means being able to treat a different zone of said coating, local measuring means of at least one property of said coating in each of said zones, arranged upstream of the heating means, and means for adapting the conditions of the heat treatment of each zone according to the measurement previously obtained for the zone in question.
- the measurement and heat treatment steps, performed on the moving substrate, are advantageously performed online, that is to say on the same industrial line, within the device according to the invention.
- the ability to control the heat treatment according to the characteristics of the layer makes the process more flexible and / or increase the homogeneity of the coating after treatment.
- the use of several heating means each treating a portion of the coating and the possibility of controlling them individually depending on the local characteristics of the portion of the coating. coating to be treated have a large number of advantages.
- the use of several heating means instead of one makes it easier to design, manufacture, adjust and maintaining the heating means and associated devices (eg focusing devices when the heating means are lasers or microwave sources, as will be discussed in more detail later).
- the use of several means independent of each other also makes it possible to adapt the treatment to substrates of different sizes, or to zones to be treated of different sizes, for example in the latter case when only a portion of the original substrate must be used and will be cut later.
- the choice of independent means and the possibility of controlling them to adapt the heat treatment conditions according to the local characteristics of the layer make it possible to adapt to coatings whose homogeneity is not perfect, which is frequently the case. especially in the case of large substrates, such as substrates of 6 * 3m 2 used in the glass industry. It is indeed difficult to obtain a perfectly homogeneous coating on such a large surface.
- the cathodes may wear out in a heterogeneous manner.
- the heterogeneity of the deposit in particular when it results in an absorption heterogeneity, can be amplified by the heat treatment, in particular by laser.
- the or each heating means is advantageously selected from lasers, plasma torches, microwave sources, burners, inductors.
- Lasers generally consist of modules comprising one or more laser sources as well as optical shaping and redirection. Lasers are preferably in the form of a line, called "laser line” in the rest of the text.
- Laser sources are typically laser diodes or fiber or disk lasers.
- the laser diodes make it possible to economically achieve high power densities relative to the power supply power for a small space requirement.
- the size of the fiber lasers is even smaller, and the linear power obtained can be even higher, but at a higher cost.
- the radiation from the laser sources may be continuous or pulsed, preferably continuous.
- the repetition frequency is advantageously at least 10 kHz, especially 15 kHz and even 20 kHz so as to be compatible with the high movement speeds used.
- the wavelength of the radiation of the or each laser line is preferably in a range from 800 to 1100 nm, in particular from 800 to 1000 nm.
- Power laser diodes emitting at a wavelength selected from 808 nm, 880 nm, 915 nm, 940 nm or 980 nm have proved particularly suitable.
- the shaping and redirecting optics preferably comprise lenses and mirrors, and are used as means for positioning, homogenization and focusing of the radiation.
- the purpose of the positioning means is, where appropriate, to arrange the radiation emitted by the laser sources along a line. They preferably include mirrors.
- the aim of the homogenization means is to superpose the spatial profiles of the laser sources in order to obtain a homogeneous linear power along the line.
- the homogenization means preferably comprise lenses enabling the incident beams to be separated into secondary beams and the recombination of said secondary beams into a homogeneous line.
- the means for focusing the radiation make it possible to focus the radiation on the coating to be treated, in the form of a line of desired length and width.
- the focusing means preferably comprise a converging lens.
- the or each line has a length and a width.
- the term "length" of the line the largest dimension of the line, measured on the surface of the coating, and "width" the dimension in a direction transverse to the direction of the largest dimension.
- the width w of the line corresponds to the distance (in this transverse direction) between the axis of the beam (where the intensity of the radiation is maximum) and the point where the Radiation intensity is equal to 1 / e 2 times the maximum intensity. If the longitudinal axis of the laser line is named x, we can define a distribution of widths along this axis, named w (x).
- the average width of the or each laser line is preferably at least 35 microns, especially in a range from 40 to 100 microns or 40 to 70 microns. Throughout this text we mean by "average" the arithmetic mean. Throughout the length of the line, the width distribution is narrow to avoid heterogeneity of treatment. Thus, the difference between the largest width and the smallest width is preferably at most 10% of the average width value. This figure is preferably at most 5% and even 3%.
- the length of the or each laser line is preferably at least 10 cm or 20 cm, especially in a range from 30 to 100 cm, especially 30 to 75 cm, or even 30 to 60 cm.
- the formatting and redirection optics in particular the positioning means, can be adjusted manually or by means of actuators making it possible to adjust their positioning remotely.
- actuators typically motors or piezoelectric shims
- These actuators can be manually controlled and / or adjusted automatically.
- the actuators will preferably be connected to detectors as well as to a feedback loop.
- At least a portion of the laser modules, or all of them, is preferably arranged in a sealed box, advantageously cooled, in particular ventilated, in order to ensure their thermal stability.
- Laser modules are preferably mounted on a rigid structure, called "bridge", based on metal elements, typically aluminum.
- the structure preferably does not include a marble slab.
- the bridge is preferably positioned parallel to the conveying means so that the focal plane of the or each laser line remains parallel to the surface of the substrate to be treated.
- the bridge comprises at least four feet, the height of which can be individually adjusted to ensure parallel positioning under all circumstances. The adjustment can be provided by motors located at each foot, either manually or automatically, in relation to a distance sensor.
- the height of the bridge can be adapted (manually or automatically) to take into account the thickness of the substrate to be treated, and thus ensure that the plane of the substrate coincides with the focal plane of the or each laser line.
- the linear power divided by the square root of the duty ratio of the laser sources is preferably at least 300 W / cm, advantageously 350 or 400 W / cm, in particular 450 W / cm, or even 500 W / cm and even 550 W / cm. cm.
- the linear power divided by the square root of the duty cycle is even advantageously at least 600 W / cm, in particular 800 W / cm, or even 1000 W / cm.
- the duty ratio is 1, so that this number corresponds to the linear power.
- the linear power is measured where the or each laser line is focused on the coating. It can be measured by placing a power detector along the line, for example a power-meter calorimetric, such as in particular the power meter Beam Finder Cohérent Inc.
- the power is advantageously distributed homogeneously over the entire length of the or each line. Preferably, the difference between the highest power and the lowest power is less than 10% of the average power.
- the energy density provided to the coating divided by the square root of the duty cycle is preferably at least 20 J / cm 2 , or even 30 J / cm 2 . Again, the duty ratio is 1 when the laser radiation is continuous.
- At least a portion of the (main) laser radiation transmitted through the substrate and / or reflected by the coating is redirected towards said substrate to form at least secondary laser radiation, which preferably impacts the substrate at the same location as the main laser radiation, with advantageously the same depth of focus and the same profile.
- the formation of the or each secondary laser radiation advantageously implements an optical assembly comprising only optical elements chosen from mirrors, prisms and lenses, in particular an optical assembly consisting of two mirrors and a lens, or a prism and a lens.
- each heating means is a laser
- the absorption of the coating at the wavelength of the laser is preferably CLU. less than 5%, especially 10%, and is advantageously at most 90%, especially 80% or 70%, even 60% or 50%, and even 40% or even 30%.
- the heating means can also be burners.
- the burners may be external combustion, in the sense that the mixture between the fuel and the oxidant is made at the nose of the burner or in the extension thereof. In this case, the substrate is subjected to the action of a flame.
- the burners may also be internal combustion, in the sense that the fuel and the oxidant are mixed inside the burner: the substrate is then subjected to the action of hot gases. All intermediate cases are of course possible, in the sense that only part of the combustion can take place inside the burner, and the other part outside.
- the substrate may be subjected to the action of a flame and / or hot gases.
- Oxygen burner burners i.e. using pure oxygen, generally do not contain a premix chamber.
- the gas used for the flaming may be a mixture of an oxidizing gas, in particular chosen from air, oxygen or their mixtures, and a combustible gas, in particular chosen from natural gas, propane, butane, even acetylene or hydrogen, or mixtures thereof.
- Oxygen is preferred as an oxidizing gas, particularly in combination with natural gas (methane) or propane, on the one hand because it allows to reach higher temperatures and therefore shorten the treatment and avoid the substrate heating, and secondly because it avoids the creation of NO x nitrogen oxides.
- the coated substrate is generally positioned within the visible flame, especially at the hottest zone of the flame, a portion of the visible flame then extending around the treated area.
- the heating means may also be plasma torches.
- a plasma is an ionized gas generally obtained by subjecting a so-called "plasmagen” gas to an excitation such as a strong continuous or alternating electric field (for example an electric arc). Under the action of this excitation, electrons are torn from the atoms of the gas and the charges thus created migrate towards the electrodes of opposite charge. These charges then excite other atoms of the gas by collision, creating by avalanche effect a homogeneous or microfilament discharge or an arc.
- an excitation such as a strong continuous or alternating electric field (for example an electric arc).
- Plasmas can be "hot” (the gas is then fully ionized and the plasma temperature is of the order of 10 6o C), or “thermal” (the gas is almost completely ionized and the plasma temperature is order of 10 4o C, for example electric arcs).
- Plasmas contain many active species, that is, capable of interacting with matter, including ions, electrons or free radicals.
- a plasma torch a gas is blown through an electric arc, and the thermal plasma formed is blown to the substrate to be treated.
- the plasma torch is commonly used to deposit thin films on various substrates by adding precursors in the form of powders to the plasma.
- the blown gas is preferably nitrogen, air or argon, advantageously comprising a hydrogen content by volume of between 5 and 50%, especially between 15 and 30%.
- the heating means may also be microwave sources.
- Microwaves are electromagnetic waves whose wavelength is between 1 mm and 1 m, suitable for the heat treatment of dielectric coatings.
- Microwave sources (magnetrons) are preferably associated with radiating waveguides or cavities (singlemode or multimode).
- the substrate can scroll under radiating waveguides arranged in a tunnel.
- Wave traps consisting of water-cooled absorbent filters are preferably arranged upstream and downstream of the sources in order to avoid any outward wave leakage.
- the Heat treatment can be achieved by induction.
- the heating means are then inductors.
- Induction heating of metal parts is a well-known method for achieving fast and controlled high temperatures in solid conductive parts (reinforcing steels, silicon zone melting, etc.).
- the main applications relate to the fields of food processing (heating of tanks, cooking of flat products on metal strips, cooking-extrusion) and of the manufacture of metals (fusion, reheating before forming, heat treatment in the mass, surface heat treatment, treatment of coatings, welding, brazing).
- solenoid An alternating current flowing through a coil (called solenoid or coil) generates inside it a magnetic field oscillating at the same frequency. If an electrically conductive part is placed inside the coil (or solenoid), currents induced by the magnetic field develop there and heat the part by Joule effect.
- the currents appear on the surface of the part to be heated.
- a characteristic depth called skin thickness can be defined, giving as a first approach the thickness of the current layer.
- the skin thickness of the currents depends on the nature of the heated metal and decreases as the frequency of the current increases.
- a high frequency polarization in order to concentrate the influence of the inductor on the surface portion of the material.
- the frequency is preferably between 500 kHz and 5 MHz, especially between 1 MHz and 3 MHz.
- An inductor specially adapted for treating flat surfaces is preferably employed.
- the temperature experienced by the coating during the heat treatment is preferably at least 300 ° C, in particular 350 ° C, or even 400 ° C.
- the temperature of the substrate at the opposite side to the coated face does not exceed 100 ° C, especially 50 ° C and even 30 ° C during the heat treatment.
- heating means in particular laser lines
- the number of heating means is preferably at least 3, even 4, or even 5, or even 6, or 7, or even 8, and even 9, or even 10 or 11, depending the width of the substrates to be treated.
- the number of heating means is preferably between 3 and 11 (including terminals), in particular between 5 and 10 (including terminals).
- the heating means are arranged so that the entire surface of the stack can be processed.
- the heating means have a linear geometry; it may be for example burners or linear inductors or laser lines.
- each means is preferably arranged perpendicular to the direction of travel of the substrate, or arranged obliquely.
- the heating means are generally parallel to each other.
- the different means can process the substrate simultaneously or in a time-shifted manner.
- the heating means in particular the laser lines
- the heating means can be arranged in a V-shape, staggered or in spikes.
- the heating means may be arranged in rows perpendicular to the running direction of the substrate. The number of rows is for example at least 2 or even 3.
- the number of rows is not greater than 3 to limit the footprint of the heat treatment area.
- the heating means it is preferable to arrange the heating means so that there is overlap, that is to say that certain areas (low dimension, typically less than 10 cm or even 1 cm) are treated at least twice.
- the distance between two heating means treating adjacent zones is preferably such that the recovery zones have time to return to a temperature close to ambient to avoid damage to the coating.
- the distance between two heating means treating adjacent areas is preferably at least three times the distance traveled by a point of the layer under the laser line.
- the heating means can be arranged on one and the same line (in other words the number of rows is 1).
- the heating means are laser lines, it is preferable to choose a profile making it possible to obtain a continuous and homogeneous line at the level of the coating.
- At least one property of the coating measured before the heat treatment is chosen from optical, electrical or dimensional properties.
- the optical properties are advantageously chosen from absorption, reflection, transmission, the colour.
- the measurement of these properties can for example be achieved by means of at least one CCD camera or photodiode coupled to at least one light source, coherent or not, and possibly to filters, prisms or networks.
- the measurement of these properties can be carried out using a spectrophotometer.
- the electrical properties are advantageously chosen from resistivity, conductivity and square resistance.
- the measurement of these properties can for example be carried out by means of at least one non-contact inductive or capacitive sensor, for example square resistance measuring means marketed by Nagy Messsysteme GmbH.
- the dimensional properties are advantageously chosen from the position and the thickness.
- the measurements of these properties are carried out on the moving substrate, preferably without contact with the substrate and / or the coating.
- the substrate travels continuously and on the same line, first with regard to measuring means, which perform the local measurement of the property (where appropriate in different areas of the coating), and then with respect to the means ( s) heating.
- the measuring means are advantageously distributed in one or more lines (preferably a line), depending on their size.
- the or each line is typically arranged perpendicular to the direction of travel of the substrate, or possibly obliquely.
- one or more measurements can be made, for example two, three or four measurements.
- the adaptation of the conditions of the heat treatment is preferably carried out automatically.
- the measured values can be for example processed by an algorithm calculating the correction value to be applied.
- An appropriate delay is applied between the measurement and the correction, calculated as a function of the running speed and the distance separating the measuring means from the corresponding heating means.
- the algorithm can be implemented by an electronic circuit, a computer program or an expert system.
- Adaptation can also be done manually. It may be useful to be able to adapt the treatment conditions both automatically and manually. An operator can for example manually stop a heating means to adapt the treatment to a smaller substrate but maintain an automatic adaptation for still active heat sources.
- the adaptation of the conditions of the heat treatment can be carried out in different ways.
- the conditions of the heat treatment are adapted by modifying the power delivered by the heating means.
- the conditions of the heat treatment of each zone are adapted by modifying the power delivered by the heating means processing said zone.
- the power (intensity) of one or more of the laser sources can be varied, depending on the measurement obtained for the property measured upstream.
- the power of a burner can be increased by increasing the gas flow.
- Other adaptations of the heat treatment conditions are possible.
- the adaptation may consist of a displacement of the focusing means, allowing a displacement of the focal plane.
- the adaptation may also include a modification of at least one dimension of the laser line to change its intensity at the coating, or a modification of the wavelength of the laser (in the case of tunable lasers).
- the adaptation of the heat treatment may also comprise a modification of the speed of travel of the substrate or a modification of the duty cycle in the case of pulsed laser sources.
- the adaptation of the conditions of the heat treatment may comprise stopping one of the heating means, or even all the heating means. For example, if the measuring means detect the absence of coating in a given area (due in particular to a difference in size of the substrate), the heating means (for example the laser line) opposite the area where the coating is absent can be stopped.
- the laser source or sources concerned can be stopped (automatically, or even manually ) to prevent damage.
- an optical property (in particular the absorption) of the coating is measured locally using optical sensors and the power of the laser lines is adapted according to the measurement (absorption) obtained.
- This embodiment is particularly suitable for the case of absorbent layers treated with laser lines, the treatment according to the invention making it possible to compensate for heterogeneities in the composition, thickness, or stoichiometry of the layer by acting on the power of the laser sources.
- the absorption is locally higher in a given area, the power of the laser source processing this area is decreased, and vice versa.
- the use of a single laser line, or of several lines treating the entire width of the substrate in the same way could amplify the heterogeneities of the coating.
- the substrate may be set in motion by any mechanical conveying means, for example using strips, rollers, translational trays.
- the conveyor system controls and controls the speed of travel.
- the conveying means preferably comprises a rigid frame and a plurality of rollers.
- the pitch of the rollers is advantageously in a range from 50 to 300 mm.
- the rollers preferably comprise metal rings, typically made of steel, covered with plastic bandages.
- the rollers are preferably mounted on low-clearance bearings, typically three rolls per step. In order to ensure perfect flatness of the conveying plane, the positioning of each of the rollers is advantageously adjustable.
- the rollers are preferably driven by means of pinions or chains, preferably tangential chains, driven by at least one motor.
- the displacement can be achieved using a film feed system in the form of a succession of rolls.
- the flatness can be ensured by an adequate choice of the distance between the rollers, taking into account the thickness of the substrate (and therefore its flexibility) and the impact that heat treatment can have on the creation. of a possible arrow.
- the speed of displacement of the substrate is advantageously at least 4 m / min, especially 5 m / min and even 6 m / min or 7 m / min, or 8 m / min and even 9 m / min or 10 m / min. min.
- the movement speed of the substrate is at least 12 m / min or 15 m / min, especially 20 m / min and even 25 or 30 m / min.
- the speed of displacement of the substrate varies during the treatment by at most 10% in relative, in particular 2% and even 1% compared to its nominal value.
- the substrate will generally be arranged horizontally or substantially horizontally, but it can also be arranged vertically, or in any possible inclination.
- the heating means are generally arranged so as to treat the upper face of the substrate.
- the heating means can also process the underside of the substrate. In this case, it is necessary that the conveying system of the substrate passes the heat to the area to be treated. This is the case for example when using conveying rollers: the rollers being disjoint, it is possible to arrange the heating means in an area between two successive rollers.
- heating means located on either side of the substrate, whether the latter is in a horizontal, vertical or any inclination position.
- These heating means may be identical or different, in particular in the case of lasers, their wavelengths may be different, in particular adapted to each of the coatings to be treated.
- a first coating for example low-emissive located on a first face of the substrate may be treated by a first laser radiation emitting for example in the visible or near infrared while a second coating (for example a photocatalytic coating) located on the second face of said substrate can be treated with a second laser radiation, emitting for example in the infrared.
- the heat treatment device may be integrated in a layer deposition line, for example a magnetic field assisted sputtering deposition line (magnetron process), or a chemical vapor deposition line (CVD). , in particular plasma assisted (PECVD), under vacuum or at atmospheric pressure (APPECVD).
- the line generally includes substrate handling devices, a deposition facility, optical control devices, stacking devices.
- the substrates scroll, for example on conveyor rollers, successively in front of each device or each installation.
- the heat treatment device according to the invention is preferably located just after the coating deposition installation, for example at the outlet of the deposition installation.
- the coated substrate can thus be treated in line after the deposition of the coating, at the exit of the deposition installation and before the optical control devices, or after the devices. optical control and before the stacking devices of the substrates.
- the heat treatment device can also, in some cases, be integrated in the deposit facility.
- laser sources may be introduced into one of the chambers of a sputtering deposition installation, in particular in a chamber where the atmosphere is rarefied, in particular under a pressure of between 10 ⁇ 6 mbar and 10 ⁇ 2 mbar.
- the heat treatment device may also be disposed outside the deposition installation, but so as to treat a substrate located inside said installation.
- a transparent window at the wavelength of the radiation used, through which the laser radiation would treat the layer. It is thus possible to treat a layer (for example a layer of silver) before the subsequent deposit of another layer in the same installation.
- these "on-line" methods are preferable to a recovery process in which it would be necessary to stack the glass substrates between the deposition step. and heat treatment.
- Processes recovery can however be of interest in cases where the implementation of the heat treatment according to the invention is made in a different location from where the deposit is made, for example in a place where is performed the transformation of glass .
- the heat treatment device can therefore be integrated with other lines than the layer deposition line. It can for example be integrated into a production line of multiple glazing (double or triple glazing in particular), a line for manufacturing laminated glass, or a production line of curved glazing and / or tempered. Laminated or curved or tempered glass can be used as building or automotive glazing.
- the heat treatment according to the invention is preferably carried out before the production of multiple or laminated glazing.
- the heat treatment can, however, be implemented after completion of double glazing or laminated glazing.
- the heat treatment device is preferably arranged in a closed enclosure for securing people by avoiding contact with the laser radiation and to avoid any pollution, especially of the substrate, optics or of the treatment area.
- the deposition of the coating on the substrate can be carried out by any type of process, in particular processes generating predominantly amorphous or nano-crystallized layers, such as the cathode sputtering method, notably assisted by a magnetic field (magnetron process), the method plasma enhanced chemical vapor deposition (PECVD), the vacuum evaporation method, or the sol-gel method.
- a magnetic field magnetic field
- PECVD plasma enhanced chemical vapor deposition
- sol-gel method sol-gel method.
- the coating is preferably deposited by cathodic sputtering, in particular assisted by a magnetic field (magnetron process).
- the thermal treatment of the coating is preferably under air and / or at atmospheric pressure.
- the substrate is preferably glass, glass ceramic or polymeric organic material. It is preferably transparent, colorless (it is then a clear or extra-clear glass) or colored, for example blue, gray, green or bronze.
- the glass is preferably of the silico-soda-lime type, but it may also be of borosilicate or alumino-borosilicate type glass.
- Preferred polymeric organic materials are polycarbonate, polymethyl methacrylate, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or fluorinated polymers such as ethylene tetrafluoroethylene (ETFE).
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- ETFE fluorinated polymers
- the substrate advantageously has at least one dimension greater than or equal to 1 m, or even 2 m and even 3 m.
- the thickness of the substrate generally varies between 0.5 mm and 19 mm, preferably between 0.7 and 9 mm, especially between 2 and 8 mm, or even between 4 and 6 mm.
- the substrate may be flat or curved, or even flexible.
- the glass substrate is preferably of the float type, that is to say likely to have been obtained by a process of pouring the molten glass on a bath of molten tin ("float" bath).
- the coating to be treated can be deposited on the "tin” side as well as on the "atmosphere” side of the substrate.
- the term "atmosphere” and “tin” faces means the faces of the substrate having respectively been in contact with the atmosphere prevailing in the float bath and in contact with the molten tin.
- the tin side contains a small surface amount of tin diffusing into the glass structure.
- the glass substrate can also be obtained by rolling between two rollers, a technique which makes it possible in particular to print patterns on the surface of the glass.
- the heat treatment is preferably intended to improve the crystallization of the coating, in particular by increasing the size of the crystals and / or amount of crystalline phase.
- the heat treatment may also be for oxidizing a layer of a sub-stoichiometric metal or metal oxide to oxygen, possibly by promoting the growth of a particular crystalline phase.
- the heat treatment step does not involve melting, even partial, coating.
- the heat treatment makes it possible to bring sufficient energy to promote crystallization of the coating by a physical ⁇ chemical mechanism of crystal growth around nuclei already present in the coating, remaining in the solid phase.
- This treatment does not use a mechanism of crystallization by cooling from a molten material, on the one hand because it would require extremely high temperatures, and secondly because it would be likely to change the thicknesses or indices of refraction of the coating, and therefore its properties, for example by modifying its optical appearance.
- the coating treated the coating preferably comprises at least one thin layer of a metal, oxide, nitride, carbide, oxynitride or any of their mixtures. It preferably comprises a thin layer chosen from metal layers (especially based on or consisting of silver or molybdenum), titanium oxide layers and transparent electroconductive layers.
- the electroconductive transparent layers are typically based on mixed oxides of tin and indium (called “ITO”), based on mixed oxides of indium and zinc (called “IZO”), based on oxide of zinc doped with gallium or aluminum, based on niobium-doped titanium oxide, based on cadmium stannate or zinc, based on tin oxide doped with fluorine and / or antimony.
- ITO mixed oxides of tin and indium
- IZO mixed oxides of indium and zinc
- oxide of zinc doped with gallium or aluminum based on niobium-doped titanium oxide, based on cadmium stannate or zinc, based on tin oxide doped with fluorine and / or antimony.
- These different layers have the distinction of being transparent and nevertheless conductive or semi-conductive layers, and are used in many systems where these two properties are necessary: liquid crystal displays (LCD), solar or photovoltaic sensors, electrochromic devices or electroluminescent
- LED In particular LED, OLED
- Their thickness is typically between 50 and 1000 nm, including terminals.
- Thin metal layers for example based on metallic silver, but also based on molybdenum or metallic niobium, have properties of electrical conduction and reflection of infrared radiation, hence their use in solar control glazing, especially anti-solar (aimed at reducing the amount of incoming solar energy) or low-emissivity (aimed at reducing the amount of energy dissipated to the outside of a building or a vehicle).
- Their physical thickness is typically between 4 and 20 nm (inclusive).
- the low emissive stacks may frequently include several silver layers, typically 2 or 3. The or each silver layer is generally surrounded by dielectric layers protecting it from corrosion and making it possible to adjust the reflection aspect of the coating.
- Molybdenum is frequently used as an electrode material for photovoltaic cells based on CuIn x Gai_ x Se2, where x varies from 0 to 1.
- the treatment according to the invention makes it possible to reduce its resistivity.
- Other metals may be treated according to the invention, for example titanium, in particular for the purpose of oxidizing it and obtaining a photocatalytic titanium oxide layer.
- the coating to be treated is a low-emissive stack, it preferably comprises, from the substrate, a first coating comprising at least a first dielectric layer, at least one silver layer, optionally an over-blocking layer and a second coating comprising at least a second dielectric layer.
- the physical thickness of the or each silver layer is between 6 and 20 nm.
- the overblocking layer is intended to protect the silver layer during the deposition of a subsequent layer (for example if the latter is deposited under an oxidizing or nitriding atmosphere) and during a possible thermal treatment of the quenching or bending type.
- the silver layer can also be deposited on and in contact with a sub-blocker layer.
- the stack may therefore comprise an overbetter layer and / or a sub-blocker layer flanking the or each layer of silver.
- the blocker layers are generally based on a metal selected from nickel, chromium, titanium, niobium, or an alloy of these different metals. Mention may in particular be made of nickel-titanium alloys (especially those comprising about 50% by weight of each metal) or nickel-chromium alloys (especially those comprising 80% by weight of nickel and 20% by weight of chromium).
- the over-blocking layer may also consist of several superimposed layers, for example, away from the substrate, titanium and then a nickel alloy (especially a nickel-chromium alloy) or vice versa.
- the various metals or alloys mentioned can also be partially oxidized, in particular having an oxygen sub-stoichiometry (for example TiO x or NiCrO x ).
- These layers of blocker are very thin, normally less than 1 nm thick, so as not to affect the light transmission of the stack, and are likely to be partially oxidized during the heat treatment according to the invention.
- the blocking layers are sacrificial layers capable of capturing the oxygen coming from the atmosphere or the substrate, thus avoiding oxidation of the silver layer.
- the first and / or second dielectric layer is typically oxide (especially tin oxide), or preferably nitride, in particular silicon nitride (in particular for the second dielectric layer, furthest from the substrate).
- the silicon nitride may be doped, for example with aluminum or boron, in order to facilitate its deposition by sputtering techniques.
- the doping rate (corresponding to the atomic percentage with respect to the amount of silicon) does not generally exceed 2%.
- the first coating may comprise a dielectric layer, or several dielectric layers, typically 2 to 4.
- the second coating may comprise a dielectric layer, or several dielectric layers, typically 2 to 3. These dielectric layers are preferably made of a material chosen from silicon nitride, titanium, tin or zinc oxides, or any of their solid mixtures or solutions, for example tin and zinc oxide, or titanium zinc oxide.
- the physical thickness of the dielectric layer, or the overall physical thickness of the set of dielectric layers is preferably between 15 and 60 nm, especially between 20 and 50 nm.
- the first coating preferably comprises, immediately under the silver layer or under the optional layer of sub-blocker, a wetting layer whose function is to increase the wetting and attachment of the silver layer. Zinc oxide, in particular doped with aluminum, has proved particularly advantageous in this respect.
- the first coating may also contain, directly below the wetting layer, a smoothing layer, which is a partially or totally amorphous mixed oxide (therefore of very low roughness), the function of which is to promote the growth of the wetting layer according to a preferential crystallographic orientation, which promotes the crystallization of silver by epitaxial phenomena.
- the smoothing layer is preferably composed of a mixed oxide of at least two metals selected from Sn, Zn, In, Ga, Sb.
- a preferred oxide is antimony doped tin and indium oxide.
- the wetting layer or the optional smoothing layer is preferably deposited directly on the first dielectric layer.
- the first dielectric layer is preferably deposited directly on the substrate.
- the first dielectric layer may alternatively be deposited on another oxide or nitride layer, for example made of titanium oxide.
- the second dielectric layer can be deposited directly on the layer silver, or preferably on an over-blocker, or on other oxide or nitride layers for adapting the optical properties of the stack.
- a layer of zinc oxide, in particular doped with aluminum, or a layer of tin oxide may be placed between an over-blocker and the second dielectric layer, which is preferably nitride oxide. silicon.
- Zinc oxide, in particular doped with aluminum makes it possible to improve the adhesion between silver and the upper layers.
- the stack treated according to the invention preferably comprises at least one ZnO / Ag / ZnO sequence.
- Zinc oxide can be doped with aluminum.
- a sub-blocker layer may be disposed between the silver layer and the underlying layer. Alternatively or cumulatively, an overbetter layer may be disposed between the silver layer and the overlying layer.
- the second coating can be surmounted by an overcoat, sometimes called “overcoat” in the art.
- Last layer of the stack so in contact with the ambient air, it is intended to protect the stack against any mechanical aggression (scratches ...) or chemical.
- This overlay is generally very fine so as not to disturb the reflection aspect of the stack (its thickness is typically between 1 and 5 nm). It is preferably based on titanium oxide or mixed tin and zinc oxide, in particular doped with antimony, deposited in sub-stoichiometric form.
- the stack may include one or more layers of silver, including two or three layers of silver.
- the general architecture presented above can be repeated.
- the second coating relating to a given silver layer (thus located above this silver layer) generally coincides with the first coating on the next silver layer.
- Thin films based on titanium oxide have the particularity of being self-cleaning, facilitating the degradation of organic compounds under the action of ultraviolet radiation and the elimination of mineral soils (dust) under the action of a runoff of water.
- Their physical thickness is preferably between 2 and 50 nm, especially between 5 and 20 nm, including terminals.
- the various layers mentioned have the common feature of seeing some of their improved properties when they are in an at least partially crystallized state. It is generally sought to increase as much as possible the crystallization rate of these layers (the mass or volume proportion of crystallized material) and the size of the crystalline grains (or the size of coherent diffraction domains measured by X-ray diffraction methods), even in some cases to favor a particular crystallographic form.
- silver layers having a high crystallization rate and therefore a low residual amorphous silver content have a lower emissivity and resistivity than predominantly amorphous silver layers.
- the electrical conductivity and the low emissivity properties of these layers are thus improved.
- the above-mentioned transparent conductive layers in particular those based on doped zinc oxide, fluorine-doped tin oxide or tin-doped indium oxide, have a higher electrical conductivity. that their crystallization rate is high.
- the coating when the coating is conductive, its square resistance is decreased by at least 10%, or even 15% or even 20% by the heat treatment. This is a relative decrease, compared to the value of the square resistance before treatment.
- coatings may be treated according to the invention. These include, but are not limited to, coatings based on (or consist of) CdTe or chalcopyrites, for example of the CuIn x Gai_ x Se2 type, where x varies from 0 to 1. It is also possible to mention coatings of type enamel (for example deposited by screen printing), paint or lacquer (typically comprising an organic resin and pigments).
- the coated substrates obtained according to the invention can be used in single, multiple or laminated glazings, mirrors, glass wall coverings.
- the coating is a low emissive stack, and in the case of a multiple glazing comprising at least two glass sheets separated by a gas strip, it is preferable that the stack is disposed on the face in contact with said blade of gas. gas, in particular in front 2 of the outside (that is to say on the face of the substrate in contact with the outside of the building which is opposite to the side facing outwards) or face 3 (That is, on the face of the second substrate from the outside of the building facing outwards).
- the coating is a photocatalytic layer, it is preferably disposed in face 1, so in contact with the outside of the building.
- coated substrates obtained according to the invention can also be used in photovoltaic cells or glazings or solar panels, the coating treated according to the invention being, for example, a ZnO: Al or Ga-based electrode in chalcopyrite-based stacks. (In particular of the type CIGS - CuIn x Gai_ x Se2, x varying from 0 to 1) or based on amorphous and / or polycrystalline silicon, or based on CdTe.
- coated substrates obtained according to the invention can still be used in display screens of the LCD (Liquid Crystal Display), OLED (Organic Light Emitting Diodes) or FED (Field Emission Display) type, the coating treated according to the invention being an electroconductive layer made of ITO. They can also be used in electrochromic glazings, the thin layer treated according to the invention being for example a transparent electroconductive layer as taught in the application FR-A-2833107.
- LCD Liquid Crystal Display
- OLED Organic Light Emitting Diodes
- FED Field Emission Display
- FIGS 1 and 2 illustrate schematically and in top view two embodiments of the invention.
- the substrate 1 provided with its coating (not shown) is moving in the direction shown by the arrow in a heat treatment device.
- This device comprises means for locally measuring properties 3a to 3g disposed along a line perpendicular to the running direction of the substrate 1, heating means having a linear geometry 2a to 2g, typically laser lines, here seven in number.
- the heating means 2a to 2g are staggered in two rows perpendicular to the direction of movement of the substrate 1.
- the heating means 2a to 2g are arranged on a row, so as to form a single line.
- the device also comprises means for adapting the heat treatment, for example means for adapting the power of the laser lines 2a to 2g.
- the measuring means 3a to 3g are, for example, optical sensors for measuring the local absorption of the coating.
- the different points of the substrate first scroll in front of the local measurement means 3a to 3g, allowing measurement by zone, here seven measurements.
- zone here seven measurements.
- the heat treatment is adapted according to the measurement made in the zone. If, for example, the sensor 3c has shown a decrease in absorption in a given area, the power of the laser 2c is increased when the area in question comes opposite this laser.
- floated silico-soda-lime glass substrates sold under the name SGG Planilux by the applicant, having a size of 6 * 3.2 m 2 and a thickness of 4 mm have been treated. and coated by the cathode sputtering method of a stack.
- This stack was of the low emissive type comprising a thin layer of silver, the purpose of heat treatment being to reduce the emissivity of the stack by better crystallization of the layer.
- the average absorption of the coating was 8% at the wavelength of the lasers employed. This absorption was not identical over the entire width of the substrates, in particular because of differences in wear at the cathodes. Thus, in the case of substrates treated for this exemplary embodiment, the absorption was 9% at one edge and 7.5% at 1/3 of the width from the opposite edge.
- the heat treatment device was of the type shown in FIG. 1, except that 11 laser lines 30 cm long each were used.
- the distance between the two rows of laser lines (measured in the direction of travel of the substrate) was 1 mm. These laser lines overlapped very slightly so that some points of the coating were treated successively by two adjacent lines. However, given the distance between rows of laser lines, the recovery zones had time to cool to room temperature before undergoing treatment with the second row of lasers.
- the width of the laser lines was 40 ⁇ m and their linear power of 450 W / cm.
- the laser sources were InGaAs laser diodes used in continuous radiation at a wavelength of 980 nm. Under these conditions, for a running speed of 10 m / min, the temperature rise in the coating was 450 ° C.
- Eleven sensors for measuring the local absorption of the coating were arranged along a line upstream of the laser lines about 50 cm from the latter.
- the sensors included lamps and photodiodes. As in the case of Figure 1, each of the sensors made it possible to determine the absorption in an area subsequently treated with a laser line.
- the adaptation of the treatment here consisted in correcting the power of the lasers according to the absorption measured upstream.
- the correction was proportional, the power of the lasers, via the current sent to the laser diodes, being decreased in proportion to the increase of absorption and vice versa.
- a delay was implemented between the measurement and the correction, the duration of this delay corresponding to the time necessary to travel the distance between the sensors and the laser lines.
- the correction was linear, in the sense that a 1% decrease in absorption was offset by a 1% increase in laser power.
- the linear power of the corresponding laser line was increased to about 500 W / cm.
- the linear power was decreased to 400 W / cm.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Toxicology (AREA)
- Surface Treatment Of Glass (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14705823.4A EP2946027A1 (fr) | 2013-01-18 | 2014-01-17 | Procede d'obtention d'un substrat muni d'un revêtement |
BR112015015827A BR112015015827A2 (pt) | 2013-01-18 | 2014-01-17 | processo de obtenção de um substrato munido de um revestimento |
KR1020157021894A KR20150108383A (ko) | 2013-01-18 | 2014-01-17 | 코팅이 구비된 기판을 얻는 방법 |
EA201591347A EA201591347A1 (ru) | 2013-01-18 | 2014-01-17 | Способ получения подложки, снабженной покрытием |
MX2015009065A MX2015009065A (es) | 2013-01-18 | 2014-01-17 | Proceso para obtener un sustrato equipado con un revestimiento. |
CN201480005046.0A CN104903489A (zh) | 2013-01-18 | 2014-01-17 | 用于获得提供有涂层的基材的方法 |
CA2896742A CA2896742A1 (fr) | 2013-01-18 | 2014-01-17 | Procede d'obtention d'un substrat muni d'un revetement |
JP2015553149A JP6640561B2 (ja) | 2013-01-18 | 2014-01-17 | コーティングを備えた基材を得る方法 |
US14/761,749 US20160010212A1 (en) | 2013-01-18 | 2014-01-17 | Process for obtaining a substrate equipped with a coating |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1350453 | 2013-01-18 | ||
FR1350453A FR3001160B1 (fr) | 2013-01-18 | 2013-01-18 | Procede d'obtention d'un substrat muni d'un revetement |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014111664A1 true WO2014111664A1 (fr) | 2014-07-24 |
Family
ID=48289293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2014/050090 WO2014111664A1 (fr) | 2013-01-18 | 2014-01-17 | Procede d'obtention d'un substrat muni d'un revêtement |
Country Status (11)
Country | Link |
---|---|
US (1) | US20160010212A1 (fr) |
EP (1) | EP2946027A1 (fr) |
JP (2) | JP6640561B2 (fr) |
KR (1) | KR20150108383A (fr) |
CN (1) | CN104903489A (fr) |
BR (1) | BR112015015827A2 (fr) |
CA (1) | CA2896742A1 (fr) |
EA (1) | EA201591347A1 (fr) |
FR (1) | FR3001160B1 (fr) |
MX (1) | MX2015009065A (fr) |
WO (1) | WO2014111664A1 (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017032947A1 (fr) * | 2015-08-25 | 2017-03-02 | Saint-Gobain Glass France | Appareil laser comprenant plusieurs modules laser generant chacun une ligne, les lignes se recouvrant avec un decalage dans le sens de la largeur |
FR3070387A1 (fr) * | 2017-08-30 | 2019-03-01 | Saint-Gobain Glass France | Dispositif de traitement thermique ameliore |
US10822270B2 (en) | 2018-08-01 | 2020-11-03 | Guardian Glass, LLC | Coated article including ultra-fast laser treated silver-inclusive layer in low-emissivity thin film coating, and/or method of making the same |
JP2021080160A (ja) * | 2014-10-29 | 2021-05-27 | キングス メタル ファイバー テクノロジーズ カンパニー, リミテッドKing’S Metal Fiber Technologies Co., Ltd. | コンピュータ |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3048244B1 (fr) * | 2016-02-26 | 2018-03-16 | Saint-Gobain Glass France | Procede de gravure selective d'une couche ou d'un empilement de couches sur substrat verrier |
DE102016223242A1 (de) * | 2016-11-24 | 2018-05-24 | Robert Bosch Gmbh | Verfahren, Vorrichtung und Steuereinheit zum metallischen Beschichten einer Oberfläche eines Bauteils aus einem Dielektrikum |
KR102006060B1 (ko) * | 2017-02-14 | 2019-09-25 | 주식회사 코윈디에스티 | 로이유리 열처리 방법 및 시스템 |
KR102061424B1 (ko) * | 2018-07-27 | 2019-12-31 | 주식회사 코윈디에스티 | 로이 유리 어닐링 장치 |
JP7162297B2 (ja) * | 2018-08-08 | 2022-10-28 | キレスト株式会社 | カーボン基材上に金属酸化物が固定化された複合体の製造方法 |
GB201902032D0 (en) * | 2019-02-14 | 2019-04-03 | Pilkington Group Ltd | Apparatus and process for determining the distance between a glass substrate and a coater |
US10996165B1 (en) * | 2020-03-19 | 2021-05-04 | The Boeing Company | Apparatus and method for measuring UV coating effectiveness |
US20230194435A1 (en) * | 2020-05-26 | 2023-06-22 | Saint-Gobain Glass France | Method for estimating a quality function of a mono- or multi-layered coated transparent substrate |
CN113321516A (zh) * | 2021-07-22 | 2021-08-31 | 清大赛思迪新材料科技(北京)有限公司 | 一种陶瓷涂料的微波烧结法 |
CN114702252B (zh) * | 2022-04-29 | 2024-06-25 | 上海耀皮玻璃集团股份有限公司 | 一种含有晶态银层的低辐射镀膜夹层玻璃及其制备方法和用途 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008096089A2 (fr) * | 2007-01-05 | 2008-08-14 | Saint-Gobain Glass France | Procede de depot de couche mince et produit obtenu |
DE102007009924A1 (de) * | 2007-02-27 | 2008-08-28 | Carl Zeiss Laser Optics Gmbh | Durchlaufbeschichtungsanlage, Verfahren zur Herstellung kristalliner Dünnschichten und Solarzellen sowie Solarzelle |
US20100024865A1 (en) * | 2007-02-27 | 2010-02-04 | Carl Zeiss Laser Optics Gmbh | Continuous coating installation, methods for producing crystalline solar cells, and solar cell |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61176012A (ja) * | 1985-01-31 | 1986-08-07 | 日立コンデンサ株式会社 | 透明電極の製造方法 |
JPS63454A (ja) * | 1986-06-20 | 1988-01-05 | Konica Corp | 透明導電性フイルムの製造方法 |
JPH0643176Y2 (ja) * | 1989-09-04 | 1994-11-09 | トヨタ自動車株式会社 | インライン式成膜装置 |
JPH03184216A (ja) * | 1989-12-12 | 1991-08-12 | Fujitsu Ltd | 透明導電膜の形成方法 |
JPH0414705A (ja) * | 1990-05-07 | 1992-01-20 | Toyobo Co Ltd | 透明導電膜およびその製造方法 |
JPH0417212A (ja) * | 1990-05-10 | 1992-01-22 | Toyobo Co Ltd | 透明導電膜とその製法 |
FR2683086B1 (fr) * | 1991-10-29 | 1997-01-03 | Alsthom Cge Alcatel | Procede de fabrication d'un conducteur souple supraconducteur a haute temperature critique. |
JP3712435B2 (ja) * | 1995-02-16 | 2005-11-02 | 株式会社シンクロン | 真空蒸着装置 |
US7741131B2 (en) * | 2007-05-25 | 2010-06-22 | Electro Scientific Industries, Inc. | Laser processing of light reflective multilayer target structure |
JP5046890B2 (ja) * | 2007-11-29 | 2012-10-10 | 株式会社コベルコ科研 | Ag系スパッタリングターゲット |
FR2929938B1 (fr) * | 2008-04-11 | 2010-05-07 | Saint Gobain | Procede de depot de couche mince. |
US8980008B2 (en) * | 2008-04-15 | 2015-03-17 | Hanergy Hi-Tech Power (Hk) Limited | Apparatus and methods for manufacturing thin-film solar cells |
FR2946335B1 (fr) * | 2009-06-05 | 2011-09-02 | Saint Gobain | Procede de depot de couche mince et produit obtenu. |
JP2012011402A (ja) * | 2010-06-30 | 2012-01-19 | Sharp Corp | ワークの加工方法、ワークの加工用光照射装置およびそれに用いるプログラム |
JP5122670B2 (ja) * | 2010-11-05 | 2013-01-16 | 日東電工株式会社 | 透明導電性フィルムの製造方法 |
-
2013
- 2013-01-18 FR FR1350453A patent/FR3001160B1/fr not_active Expired - Fee Related
-
2014
- 2014-01-17 CA CA2896742A patent/CA2896742A1/fr not_active Abandoned
- 2014-01-17 MX MX2015009065A patent/MX2015009065A/es unknown
- 2014-01-17 CN CN201480005046.0A patent/CN104903489A/zh active Pending
- 2014-01-17 BR BR112015015827A patent/BR112015015827A2/pt not_active Application Discontinuation
- 2014-01-17 EP EP14705823.4A patent/EP2946027A1/fr not_active Withdrawn
- 2014-01-17 US US14/761,749 patent/US20160010212A1/en not_active Abandoned
- 2014-01-17 KR KR1020157021894A patent/KR20150108383A/ko not_active IP Right Cessation
- 2014-01-17 EA EA201591347A patent/EA201591347A1/ru unknown
- 2014-01-17 JP JP2015553149A patent/JP6640561B2/ja not_active Expired - Fee Related
- 2014-01-17 WO PCT/FR2014/050090 patent/WO2014111664A1/fr active Application Filing
-
2018
- 2018-12-12 JP JP2018232599A patent/JP2019089698A/ja not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008096089A2 (fr) * | 2007-01-05 | 2008-08-14 | Saint-Gobain Glass France | Procede de depot de couche mince et produit obtenu |
DE102007009924A1 (de) * | 2007-02-27 | 2008-08-28 | Carl Zeiss Laser Optics Gmbh | Durchlaufbeschichtungsanlage, Verfahren zur Herstellung kristalliner Dünnschichten und Solarzellen sowie Solarzelle |
US20100024865A1 (en) * | 2007-02-27 | 2010-02-04 | Carl Zeiss Laser Optics Gmbh | Continuous coating installation, methods for producing crystalline solar cells, and solar cell |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021080160A (ja) * | 2014-10-29 | 2021-05-27 | キングス メタル ファイバー テクノロジーズ カンパニー, リミテッドKing’S Metal Fiber Technologies Co., Ltd. | コンピュータ |
WO2017032947A1 (fr) * | 2015-08-25 | 2017-03-02 | Saint-Gobain Glass France | Appareil laser comprenant plusieurs modules laser generant chacun une ligne, les lignes se recouvrant avec un decalage dans le sens de la largeur |
FR3040319A1 (fr) * | 2015-08-25 | 2017-03-03 | Saint Gobain | Appareil laser modulaire |
FR3070387A1 (fr) * | 2017-08-30 | 2019-03-01 | Saint-Gobain Glass France | Dispositif de traitement thermique ameliore |
WO2019043334A1 (fr) * | 2017-08-30 | 2019-03-07 | Saint-Gobain Glass France | Dispositif de traitement thermique amélioré |
US10822270B2 (en) | 2018-08-01 | 2020-11-03 | Guardian Glass, LLC | Coated article including ultra-fast laser treated silver-inclusive layer in low-emissivity thin film coating, and/or method of making the same |
US11236014B2 (en) | 2018-08-01 | 2022-02-01 | Guardian Glass, LLC | Coated article including ultra-fast laser treated silver-inclusive layer in low-emissivity thin film coating, and/or method of making the same |
Also Published As
Publication number | Publication date |
---|---|
CN104903489A (zh) | 2015-09-09 |
JP2016510297A (ja) | 2016-04-07 |
FR3001160B1 (fr) | 2016-05-27 |
KR20150108383A (ko) | 2015-09-25 |
BR112015015827A2 (pt) | 2017-07-11 |
CA2896742A1 (fr) | 2014-07-24 |
US20160010212A1 (en) | 2016-01-14 |
JP2019089698A (ja) | 2019-06-13 |
EA201591347A1 (ru) | 2015-12-30 |
JP6640561B2 (ja) | 2020-02-05 |
MX2015009065A (es) | 2015-09-23 |
FR3001160A1 (fr) | 2014-07-25 |
EP2946027A1 (fr) | 2015-11-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2014111664A1 (fr) | Procede d'obtention d'un substrat muni d'un revêtement | |
FR2972447B1 (fr) | Procede d'obtention d'un substrat muni d'un revetement | |
EP2839054B1 (fr) | Procede d'obtention d'un substrat revetu | |
EP2961712B1 (fr) | Procede de traitement thermique d'un revêtement | |
EP3036352B1 (fr) | Procede d'obtention d'un substrat muni d'un revetement comprenant une couche mince metallique discontinue | |
EP3057914A1 (fr) | Procede d'obtention d'un substrat revetu par un empilement comprenant une couche d'oxyde transparent conducteur | |
EP2438024B1 (fr) | Procede de depot de couche mince | |
EP3003631B1 (fr) | Procede d'obtention d'un substrat muni d'un revetement | |
EP2598454A1 (fr) | Procede d'obtention d'un materiau comprenant un substrat muni d'un revetement | |
EP2792650A1 (fr) | Procédé de dépôt de couche mince et produit obtenu | |
CA2952751A1 (fr) | Vitrage anticondensation | |
EP2406196A1 (fr) | Procédé de dépôt de couche mince |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14705823 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2014705823 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2896742 Country of ref document: CA |
|
REG | Reference to national code |
Ref country code: BR Ref legal event code: B01A Ref document number: 112015015827 Country of ref document: BR |
|
WWE | Wipo information: entry into national phase |
Ref document number: MX/A/2015/009065 Country of ref document: MX |
|
ENP | Entry into the national phase |
Ref document number: 2015553149 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15173371 Country of ref document: CO |
|
ENP | Entry into the national phase |
Ref document number: 20157021894 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 201591347 Country of ref document: EA |
|
ENP | Entry into the national phase |
Ref document number: 112015015827 Country of ref document: BR Kind code of ref document: A2 Effective date: 20150630 |