WO2014103513A1 - Module de cellule solaire et procédé de fabrication de module de cellule solaire - Google Patents

Module de cellule solaire et procédé de fabrication de module de cellule solaire Download PDF

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Publication number
WO2014103513A1
WO2014103513A1 PCT/JP2013/079877 JP2013079877W WO2014103513A1 WO 2014103513 A1 WO2014103513 A1 WO 2014103513A1 JP 2013079877 W JP2013079877 W JP 2013079877W WO 2014103513 A1 WO2014103513 A1 WO 2014103513A1
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region
solar cell
cell module
substrate
sealing material
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PCT/JP2013/079877
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English (en)
Japanese (ja)
Inventor
武田　徹
善之 奈須野
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シャープ株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell module and a method for manufacturing the solar cell module.
  • FIG. 20 shows a schematic cross-sectional view of the periphery of the conventional thin-film solar cell module described in Patent Document 1.
  • the thin film solar cell module shown in FIG. 20 includes a cell region 111 provided on a glass substrate 101 made of soda lime glass, and a sealing material 109 made of EVA (ethylene vinyl acetate) installed on the cell region 111. And a protective film 108 provided on the sealing material 109.
  • the cell region 111 includes a transparent electrode 102 made of a tin oxide film on the glass substrate 101, a photoelectric conversion layer 104 made of amorphous silicon, and a back electrode. 106.
  • the transparent electrode 102 is separated by a transparent electrode scribe line 103 embedded with a photoelectric conversion layer 104, and the photoelectric conversion layer 104 is separated by a semiconductor scribe line 105. Further, the photoelectric conversion layer 104 and the back electrode 106 are separated by a back electrode scribe line 107. Then, adjacent cells are sequentially electrically connected in series via a semiconductor scribe line 105, which is a portion where the photoelectric conversion layer 104 is separated, so that a cell region 111 is configured.
  • a bus bar electrode 112 for extracting current is provided on the surface of the transparent electrode 102 as shown in FIG.
  • an insulating separation line 113 serving as an insulating region is formed so as to surround the cell region 111, and the transparent electrode 102 is left outside the insulating separation line 113.
  • a sealing material 109 is installed on the cell region 111, and a protective film 108 is bonded on the sealing material 109.
  • the transparent electrode 102 is laminated on the glass substrate 101.
  • a part of the transparent electrode 102 is removed by a laser scribing method to form a transparent electrode scribe line 103 that separates the transparent electrode 102.
  • the photoelectric conversion layer 104 is formed by sequentially laminating a p layer, an i layer, and an n layer made of an amorphous silicon thin film so as to cover the transparent electrode 102 separated by the transparent electrode scribe line 103 by plasma CVD. Thereafter, a part of the photoelectric conversion layer 104 is removed by a laser scribe method to form a semiconductor scribe line 105.
  • the back electrode 106 is laminated so as to cover the photoelectric conversion layer 104.
  • the semiconductor scribe line 105 is filled with the back electrode 106.
  • a back electrode scribe line 107 for separating the photoelectric conversion layer 104 and the back electrode 106 is formed by a laser scribing method. Further, the insulating separation line 113 is formed by removing the transparent electrode 102, the photoelectric conversion layer 104, and the back electrode 106 by a laser scribing method so as to surround the periphery of the glass substrate 101, and the glass substrate 101 is separated from the insulating separation line 113. To expose the surface.
  • the photoelectric conversion layer 104 and the back electrode 106 located outside the insulating separation line 113 are removed by polishing over the entire circumference. As a result, only the transparent electrode 102 can be left outside the insulating separation line 113.
  • the sealing material 109 is placed on the cell region 111, the insulating separation line 113, and the transparent electrode 102 outside the insulating separation line 113, and then the protective film is formed with the sealing material 109.
  • the conventional thin film solar cell module described in Patent Document 1 shown in FIG. 20 is manufactured.
  • Patent Document 1 for example, as shown in FIG. 21, the transparent electrode 102, the photoelectric conversion layer 104, and the back electrode 106 outside the insulating separation line 113 are all removed by polishing, and then the surface of the glass substrate 101 is removed. Also disclosed is a method in which the chamfered portion 114 is formed by chamfering the periphery of the glass substrate 101 by removing it by polishing.
  • sealing is performed by using a transparent electrode 102 made of a tin oxide film at a bonding portion with the sealing material 109 at the periphery of the thin film solar cell module. It is said that the adhesive strength of the material 109 is increased. However, in this case, since it is necessary to increase the width of the insulating separation line 113 to ensure insulation, the area of the effective cell region contributing to power generation in the cell region 111 is reduced, so that the thin film solar cell Lower module characteristics
  • the strength of the periphery of the chamfered glass substrate 101 is reduced and a cleaning process is also required.
  • further improvement in the adhesion of the sealing material 109 to the glass substrate 101 is also required.
  • an object of the present invention is to provide a solar cell module and a solar cell that can ensure the peripheral insulation without reducing the area of the effective cell region and further improve the adhesive strength of the sealing material. It is to provide a method for manufacturing a module.
  • the present invention includes a light-transmitting substrate, a cell region provided on the light-transmitting substrate, a sealing material provided on the cell region, and a protective material provided on the sealing material.
  • the region includes a first electrode layer, a photoelectric conversion layer, and a second electrode layer, and has an insulating region that is a region where the peripheral surface of the light-transmitting substrate is exposed so as to surround the cell region.
  • the insulating region is a solar cell module having a convex portion made of a material different from that of the translucent substrate on the translucent substrate.
  • the present invention also includes a step of forming a cell region having a first electrode layer, a photoelectric conversion layer, and a second electrode layer on a light-transmitting substrate, and irradiating a light beam to the periphery of the cell region.
  • the insulating property of a periphery can be ensured without reducing the area of an effective cell area
  • FIG. 2A is a schematic cross-sectional view along IIA-IIA in FIG. 1
  • FIG. 2B is a schematic cross-sectional view along IIB-IIB in FIG. (A)
  • And (b) is typical sectional drawing illustrated about an example of the manufacturing method of the thin film solar cell module of embodiment shown in FIG. (A)
  • And (b) is typical sectional drawing illustrated about an example of the manufacturing method of the thin film solar cell module of embodiment shown in FIG. (A)
  • FIG. (b) is typical sectional drawing illustrated about an example of the manufacturing method of the thin film solar cell module of embodiment shown in FIG.
  • FIG. (A) And (b) is typical sectional drawing illustrated about an example of the manufacturing method of the thin film solar cell module of embodiment shown in FIG. (A) And (b) is typical sectional drawing illustrated about an example of the manufacturing method of the thin film solar cell module of embodiment shown in FIG. (A) And (b) is typical sectional drawing illustrated about an example of the manufacturing method of the thin film solar cell module of embodiment shown in FIG. (A) And (b) is typical sectional drawing illustrated about an example of the manufacturing method of the thin film solar cell module of embodiment shown in FIG. (A) And (b) is typical sectional drawing illustrated about an example of the manufacturing method of the thin film solar cell module of embodiment shown in FIG.
  • FIG. 1 It is an optical microscope photograph of an example of the substantially mesh-shaped convex part of the thin film solar cell module of embodiment.
  • (A) is a typical top view of the insulation area
  • (A) is an optical microscope photograph of the insulation area
  • (C) is a diagram showing the relationship between the formation position of the convex portion of (b) and the power density of the fundamental wave of the YAG laser beam, and (d) is a magnification of 500 times (a).
  • (E) is an optical micrograph of (a) magnified 3000 times. It is an insulation test result of the thin film solar cell module of an Example.
  • (A) is a typical top view illustrating the insulation test apparatus of the thin film solar cell module of an Example
  • (b) is a schematic block diagram illustrating the insulation test apparatus of the thin film solar cell module of an Example. is there.
  • a sealing material is peeled from the edge part of a translucent board
  • peel strength N / cm
  • FIG. 1 is a schematic plan view of a thin film solar cell module according to an embodiment which is an example of the solar cell module of the present invention.
  • a cell region 11 is provided on the translucent substrate 1, and an insulating region 10, which is a region where the peripheral surface of the translucent substrate 1 is exposed so as to surround the cell region 11.
  • FIG. 2A shows a schematic cross-sectional view along IIA-IIA in FIG. 1
  • FIG. 2B shows a schematic cross-sectional view along IIB-IIB in FIG.
  • the thin-film solar cell module shown in FIG. 1 has a transparent electrode layer 2, a semiconductor photoelectric conversion layer 4, and a back electrode layer 6 on a light-transmitting substrate 1. It has the structure laminated
  • the transparent electrode layer 2 is separated by a first separation groove 3 filled with a semiconductor photoelectric conversion layer 4, and the semiconductor photoelectric conversion layer 4 and the back electrode layer 6 are second separated.
  • the grooves 7 are separated.
  • the cell region 11 is configured by electrically connecting adjacent cells in series via a contact line 5 which is a portion where the semiconductor photoelectric conversion layer 4 is removed by a laser scribing method.
  • electrodes 12 for taking out current are formed on the surface of the back electrode layer 6 at both ends in the direction orthogonal to the longitudinal direction of the second separation groove 7 shown in FIG. .
  • Each of these electrodes 12 extends in parallel with the longitudinal direction of the second separation groove 7 as shown in FIG.
  • a convex portion 22 made of a material different from that of the translucent substrate 1 is provided on the translucent substrate 1 in the insulating region 10. . Further, a sealing material 9 is provided on the insulating region 10 and the cell region 11, and a protective material 8 is provided on the sealing material 9.
  • FIG. 1 An example of a method for manufacturing the thin-film solar cell module according to the embodiment shown in FIG. 1 will be described with reference to the schematic cross-sectional views of FIGS. 3 to 10, (a) is illustrated by a section along the IIA-IIA direction (longitudinal direction of the separation groove) shown in FIG. 1, and (b) is the IIB-IIB direction shown in FIG. It is illustrated by a cross section along (a direction perpendicular to the longitudinal direction of the separation groove).
  • a transparent electrode layer 2 is laminated on a translucent substrate 1.
  • a glass substrate etc. can be used, for example.
  • the transparent electrode layer 2 for example, a layer made of SnO 2 (tin oxide), ITO (Indium Tin Oxide) or ZnO (zinc oxide) can be used.
  • the formation method of the transparent electrode layer 2 is not specifically limited, For example, conventionally well-known sputtering method, a vapor deposition method, or an ion plating method etc. can be used.
  • the transparent electrode layer 2 is striped as shown in FIG. 4B by scanning the light beam from the translucent substrate 1 side in the longitudinal direction of the separation groove and irradiating the light beam.
  • a first separation groove 3 for separating the transparent electrode layer 2 is formed. Since the light beam is not scanned in the direction perpendicular to the longitudinal direction of the separation groove, the first separation groove 3 is formed in the direction perpendicular to the longitudinal direction of the separation groove as shown in FIG. Not.
  • the light beam used for forming the first separation groove 3 for example, a fundamental wave of YAG laser light (wavelength: 1064 nm) or a fundamental wave of YVO 4 laser light (wavelength: 1064 nm) can be used.
  • a fundamental wave of YAG laser light and the fundamental wave of YVO 4 laser light tend to pass through the transparent substrate 1 and be absorbed by the transparent electrode layer 2, the fundamental wave of the YAG laser light or the YVO 4 laser light
  • the transparent electrode layer 2 in the laser light irradiation region can be selectively heated to evaporate and remove the transparent electrode layer 2 in the laser light irradiation region.
  • a separation resistance inspection step as a means for confirming whether or not the first separation groove 3 is obtained in the inspection step, one on each side in the direction perpendicular to the longitudinal direction of the separation groove.
  • Grooves can be formed one by one.
  • one groove on each of the left and right sides can be formed in the direction orthogonal to the longitudinal direction of the separation grooves.
  • the groove formation portion is preferably processed into a region to be finally removed.
  • the semiconductor photoelectric conversion layer 4 is laminated so as to cover the transparent electrode layer 2 separated by the first separation groove 3.
  • the semiconductor photoelectric conversion layer 4 for example, a p-layer composed of an amorphous silicon thin film, an i-layer and an n-layer are sequentially stacked, a p-layer composed of an amorphous silicon thin-film is sequentially stacked, and an i-layer and an n-layer are sequentially stacked.
  • a structure in which an intermediate layer made of ZnO or the like is inserted between a p-layer made of a thin film, an i-layer and an n-layer are sequentially laminated can be used.
  • At least one of the p layer, the i layer, and the n layer is formed of an amorphous silicon thin film, such as a structure in which a p layer and an i layer made of an amorphous silicon thin film are combined with an n layer made of a microcrystalline silicon thin film.
  • the remaining layers may be composed of a microcrystalline silicon thin film, and a layer made of an amorphous silicon thin film and a layer made of a microcrystalline silicon thin film may be mixed in the p layer, the i layer, and the n layer.
  • amorphous silicon thin film for example, a thin film made of a hydrogenated amorphous silicon semiconductor (a-Si: H) in which dangling bonds of silicon are terminated with hydrogen can be used.
  • a-Si: H hydrogenated amorphous silicon semiconductor
  • microcrystalline silicon thin film for example, a thin film made of a hydrogenated microcrystalline silicon-based semiconductor ( ⁇ c-Si: H) in which dangling bonds of silicon are terminated with hydrogen can be used.
  • the thickness of the semiconductor photoelectric conversion layer 4 can be, for example, 200 nm or more and 5 ⁇ m or less.
  • the semiconductor photoelectric converting layer 4 can be laminated
  • the second harmonic of the YAG laser light (wavelength: 532 nm) or the second harmonic of the YVO 4 laser light (wavelength: 532 nm) is used.
  • the semiconductor photoelectric conversion layer 4 in the laser light irradiation region is selectively heated to irradiate the laser light. It becomes possible to evaporate and remove the semiconductor photoelectric conversion layer 4 in the region.
  • the back electrode layer 6 is laminated so as to cover the semiconductor photoelectric conversion layer 4.
  • the contact line 5 is filled with the back electrode layer 6 as shown in FIG.
  • the configuration of the back electrode layer 6 is not particularly limited, for example, a laminate of a metal thin film made of silver or aluminum and a transparent conductive film such as ZnO can be used.
  • the thickness of the metal thin film can be, for example, 100 nm or more and 1 ⁇ m or less
  • the thickness of the transparent conductive film can be, for example, 20 nm or more and 200 nm or less.
  • a single layer or a plurality of layers of a metal thin film may be used as the back electrode layer 6.
  • the back surface electrode layer 6 made of the metal thin film converts to the semiconductor photoelectric conversion layer. 4 is preferable in that metal atoms can be prevented from diffusing to 4 and the reflectance of sunlight by the back electrode layer 6 tends to be improved.
  • the formation method of the back surface electrode layer 6 is not specifically limited, For example, sputtering method etc. can be used.
  • the semiconductor photoelectric conversion layer 4 and the back electrode layer 6 are removed in a stripe shape by scanning the light beam in the longitudinal direction of the separation groove from the translucent substrate 1 side and irradiating the light beam.
  • the second harmonic (wavelength: 532 nm) of YAG laser light or the second harmonic (wavelength: 532 nm) of YVO 4 laser light is used. be able to. Since the second harmonic of the YAG laser light and the second harmonic of the YVO 4 laser light tend to pass through the transparent substrate 1 and the transparent electrode layer 2 and be absorbed by the semiconductor photoelectric conversion layer 4, respectively.
  • the semiconductor photoelectric conversion layer 4 in the laser light irradiation region is selectively heated to irradiate the laser light.
  • the semiconductor photoelectric conversion layer 4 in the region can be selectively evaporated and removed together with the back electrode layer 6.
  • the YAG laser is an Nd: YAG laser
  • the Nd: YAG laser is made of an yttrium aluminum garnet (Y 3 Al 5 O 12 ) crystal containing neodymium ions (Nd 3+ ).
  • the YAG laser oscillates the fundamental wave (wavelength: 1064 nm) of the YAG laser light, and obtains the second harmonic (wavelength: 532 nm) of the YAG laser light by converting the wavelength to 1 ⁇ 2. Can do.
  • the YVO 4 laser is an Nd: YVO 4 laser
  • the Nd: YVO 4 laser is composed of a YVO 4 crystal containing neodymium ions (Nd 3+ ).
  • YVO 4 fundamental wave of YVO 4 laser beam from a laser (wavelength: 1064 nm) oscillates, but the second harmonic of a YVO 4 laser beam by wavelength converting the wavelength to 1/2 (wavelength: 532 nm) Can be obtained.
  • the cell region 11 having the transparent electrode layer 2, the semiconductor photoelectric conversion layer 4, and the back electrode layer 6 is formed on the translucent substrate 1.
  • the peripheral surface of the translucent substrate 1 is surrounded so as to surround the cell region 11 by irradiating the periphery of the cell region 11 with the light beam 21. Is exposed to form an insulating region 10 which is a region where the peripheral surface of the translucent substrate 1 is exposed.
  • a fundamental wave of YAG laser light (wavelength: 1064 nm) or a fundamental wave of YVO 4 laser light (wavelength: 1064 nm) can be used. Since the fundamental wave of YAG laser light and the fundamental wave of YVO 4 laser light tend to pass through the transparent substrate 1 and be absorbed by the transparent electrode layer 2, the fundamental wave of the YAG laser light or the YVO 4 laser light When the fundamental wave is used, the transparent electrode layer 2 in the laser light irradiation region is selectively heated to evaporate the transparent electrode layer 2 in the laser light irradiation region, and the semiconductor photoelectric conversion layer 4 and It can be removed together with the back electrode layer 6.
  • the light beam 21 is irradiated with the first light beam having a power density of 10 W / cm 2 or more and 160 W / cm 2 or less, and then the second light beam is irradiated onto the irradiation region of the first light beam. It is preferable to be performed.
  • the low conductivity convex portion 22 that becomes the residue of the transparent electrode layer 2 can be suitably formed on the surface of the translucent substrate 1 in the insulating region 10.
  • the convex portion 22 that is a residue of the transparent electrode layer 2 may remain.
  • a first light beam having a power density of 10 W / cm 2 or more and 160 W / cm 2 or less the residue of the transparent electrode layer 2 remaining on the surface of the translucent substrate 1 in the insulating region 10
  • the convex portion 22 is not removed even by irradiation with the second light beam. This is presumably because the material constituting the residue of the transparent electrode layer 2 that becomes the convex portion 22 has been altered by the irradiation of the first light beam.
  • the electrical conductivity of the residue of the transparent electrode layer 2 used as the convex part 22 falls and becomes high resistance by irradiation of a 2nd light beam, and the insulation performance of the insulation area
  • the reason why the conductivity of the convex portion 22 is lowered and the resistance is increased is not clear.
  • the dopant fluorine is removed from the residue of the transparent electrode layer 2 constituting the convex portion 22 or the convex portion 22 is constituted. The reason is that oxygen vacancies in the residue of the transparent electrode layer 2 are eliminated.
  • the power density of the second light beam is preferably 10 W / cm 2 or more and 160 W / cm 2 or less.
  • the high resistance convex part 22 which becomes the residue of the transparent electrode layer 2 can be formed more suitably.
  • the convex part 22 contains at least one selected from the group consisting of tin, indium and zinc and oxygen.
  • the projection 22 is irradiated with the first light beam, the material constituting the projection 22 is suitably altered, and then the second light beam is irradiated to thereby project the projection.
  • the resistance of the portion 22 can be suitably increased.
  • electrodes 12 for extracting current are formed on the surface of the back electrode layer 6 at both ends in the direction orthogonal to the longitudinal direction of the second separation groove 7.
  • the sealing material 9 is installed on the cell region 11 and the insulating region 10.
  • the sealing material 9 for example, an ionomer resin or a material containing EVA resin can be used.
  • the protective material 8 is placed on the surface of the sealing material 9, and the sealing material 9 is pressed from above the protective material 8 while being sealed.
  • the sealing material 9 is cooled.
  • the sealing material 9 is once softened by heating and then cured by cooling, whereby the protective material 8 is bonded to the cell region 11 and the insulating region 10 by the sealing material 9.
  • the protective material 8 for example, a three-layer laminated film of PET (polyester) / Al (aluminum) / PET can be used.
  • the sealing material 9 is preferably heated at 100 ° C. or more and 60 minutes or less. In this case, the bonding process of the protective material 8 to the sealing material 9 can be performed more efficiently.
  • the convex portion 22 provided in the insulating region 10 is a residue of the high-resistance transparent electrode layer 2, so that the insulating properties of the periphery are ensured. Therefore, it is not necessary to increase the width of the insulating region 10. Therefore, compared with the case of the conventional patent document 1, since the area of the effective cell area
  • the thin film solar cell module of embodiment does not need the chamfering of the periphery of the translucent board
  • substrate 1 is possible. There is no need for a process.
  • the thin film solar cell module of embodiment can form the insulation area
  • a convex portion 22 that is a residue of the transparent electrode layer 2 is provided on the translucent substrate 1 in the insulating region 10, and the convex portion 22, the sealing material 9,
  • the adhesive force between the transparent substrate 1 and the sealing material 9 in the insulating region 10 is higher than the adhesive force between the glass substrate 101 and the sealing material 109 of the conventional Patent Document 1. Adhesive force can be improved. Thereby, compared with the case of the conventional patent document 1, the weather resistance of a thin film solar cell module can be improved.
  • the insulating property in the insulating region 10 can be ensured without reducing the area of the effective cell region in the cell region 11, and the adhesive force of the sealing material 9 is also improved. Can be made.
  • the insulating region 10 has an area of the surface of the solar cell module as X (m 2 ), and is 6000 (V) between the end of the translucent substrate 1 and the semiconductor photoelectric conversion layer 4. It means a region where the leakage current when a voltage is applied is less than 150 ⁇ X ( ⁇ A).
  • the convex portion 22 is formed in a substantially mesh shape. In this case, the adhesive force between the convex part 22 and the sealing material 9 can be improved.
  • FIG. 11 shows an optical micrograph of an example of a substantially mesh-like convex portion 22 of the thin film solar cell module of the embodiment. As shown in FIG. 11, the convex part 22 (white part of FIG. 11) is formed in substantially mesh shape.
  • the convex portion 22 formed in a substantially mesh shape has a portion extending substantially linearly in at least one direction.
  • the convex portion 22 and the sealing material 9 are bonded in a substantially linear shape. Therefore, the adhesive force between the convex part 22 and the sealing material 9 can be improved more.
  • the convex portions 22 formed in a substantially mesh shape are connected so as to surround the cell region 11.
  • the convex part 22 and the sealing material 9 can be adhered over the entire periphery of the translucent substrate 1, the adhesive force between the translucent substrate 1 and the encapsulating material 9 is further increased. Can be improved.
  • convex portions 22 formed in a substantially mesh shape may be divided in a direction perpendicular to the direction from the peripheral edge of the translucent substrate 1 toward the cell region 11.
  • the height H of the convex portion 22 shown in FIGS. 2A and 2B is preferably 100 nm or more from the surface of the translucent substrate 1. In this case, since the height H of the convex portion 22 is high enough to adhere to the sealing material 9, the adhesive force between the convex portion 22 and the sealing material 9 can be improved. .
  • region 11 is 6 mm or more and 15 mm or less.
  • the distance L from the peripheral edge part of the translucent substrate 1 of the insulating region 10 to the cell region 11 is 6 mm or more, the insulating property in the insulating region 10 can be ensured more reliably. Further, when the distance L from the peripheral edge of the translucent substrate 1 of the insulating region 10 to the cell region 11 is 15 mm or less, the effective cell region of the cell region 11 is not reduced.
  • the sealing material 9 contains a silane coupling agent.
  • the adhesive force of the sealing material 9 in the insulating region 10 tends to be improved. That is, since the bond energy of the covalent bond formed by the silane coupling caused by the silane coupling agent satisfies the relationship of Zn—O> Sn—O> Si—O, the insulating region 10 can transmit light such as a glass substrate. It is considered that the adhesive force of the sealing material 9 is improved when the convex portion 22 that is a residue of the transparent electrode layer 2 remains in the insulating region 10 rather than the insulating substrate 10 alone.
  • the sealing material 9 contains a silane coupling agent
  • the adhesive force of the sealing material 9 is also caused by adhesion by the silane coupling, and the sealing material 9 does not need to be heated so much. Since it exhibits a high adhesive force, the tact time can be shortened.
  • a silane coupling agent a conventionally well-known silane coupling agent can be used suitably, for example.
  • the transparent electrode layer 2 is removed in a stripe shape by scanning and irradiating the fundamental wave of the YAG laser light in the longitudinal direction of the separation groove from the translucent substrate 1 side, as shown in FIG.
  • the 1st separation groove 3 which isolate
  • the first separation grooves 3 were formed such that the distance between the adjacent first separation grooves 3 was equal (only the effective cell region).
  • the 1st separation groove 3 was not formed in the direction orthogonal to the longitudinal direction of a separation groove.
  • An i layer composed of a semiconductor ( ⁇ c-Si: H) and an n layer composed of a hydrogenated microcrystalline silicon-based semiconductor ( ⁇ c-Si: H) are formed in this order, and FIG. 5 (a) and FIG. 5 (b).
  • a semiconductor photoelectric conversion layer 4 was formed as shown in FIG.
  • the second harmonic of the YAG laser light is scanned in the longitudinal direction of the separation groove while irradiating the transparent electrode layer 2 with an intensity that does not damage the semiconductor photoelectric conversion layer 4.
  • a part was removed in a stripe shape, and contact lines 5 were formed as shown in FIG.
  • the contact lines 5 were formed so that the distances between the adjacent contact lines 5 were equal.
  • the contact line 5 was not formed in the direction orthogonal to the longitudinal direction of the separation groove.
  • the back electrode layer 6 was formed as shown in FIGS. 7A and 7B by sequentially forming a transparent conductive film made of ZnO and a metal thin film made of silver by sputtering.
  • the second harmonic of the YAG laser light is scanned in the longitudinal direction of the separation groove and irradiated from the translucent substrate 1 side so that a part of the semiconductor photoelectric conversion layer 4 and the back electrode layer 6 is formed in a stripe shape.
  • the second separation groove 7 was formed as shown in FIG. Thereby, the cell region 11 having the transparent electrode layer 2, the semiconductor photoelectric conversion layer 4, and the back electrode layer 6 was formed on the translucent substrate 1.
  • the 2nd separation groove 7 was formed so that the distance between the adjacent 2nd separation grooves 7 might become equal intervals. Further, as shown in FIG. 8A, the second separation groove 7 was not formed in the direction orthogonal to the longitudinal direction of the separation groove.
  • the light beam 21 was irradiated to the periphery of the cell region 11.
  • the irradiation of the light beam 21 was performed by irradiating the irradiation region by shifting the irradiation region in the scanning direction for each shot, as will be described later.
  • the insulating region 10 which is a region where the peripheral surface of the translucent substrate 1 is exposed so as to surround the cell region 11, was formed. Further, as shown in the optical micrographs shown in FIG. 12B and FIG. 12C, on the surface of the translucent substrate 1 in the insulating region 10, a high resistance that becomes a residue of the transparent electrode layer 2. A substantially mesh-shaped convex portion 22 was formed.
  • the substantially mesh-shaped convex portion 22 has a scanning direction of the fundamental wave of the first YAG laser beam and the fundamental wave of the second YAG laser beam.
  • the protrusions 22 extend substantially linearly in one direction along 31, and are connected so as to surround the cell region 11. Further, the convex portion 22 had a height of 100 nm or more from the surface of the translucent substrate 1. Furthermore, the insulating region 10 was formed so that the distance from the peripheral edge of the translucent substrate 1 to the cell region 11 was 6 mm or more and 15 mm or less.
  • FIG. 13 shows an EDX analysis result of the convex portion 22 in the insulating region 10 formed as described above. As shown in FIG. 13, it was confirmed that the convex part 22 formed on the surface of the translucent substrate 1 in the insulating region 10 contains tin (Sn) (a part surrounded by a circle in FIG. 13). reference).
  • FIG. 14A shows an optical micrograph of the insulating region 10 having the convex portion 22 formed in the same manner as described above except that the conditions are changed as follows, and FIG. 14 (a) shows an optical micrograph magnified 100 times after rotating 90 °, and FIG. 14 (c) shows the formation position of the convex portion 22 in FIG. 14 (b) and the power of the fundamental wave of the YAG laser light. The relationship with density is shown.
  • FIG. 14D shows an optical micrograph of FIG. 14A magnified 500 times
  • FIG. 14E shows an optical micrograph of FIG. 14A magnified 3000 times.
  • a fundamental wave of a 1.06 ⁇ m wavelength YAG laser beam having a square irradiation region with a side of 0.53 mm is set to a maximum power density of 200 W / cm 2 , and the irradiation region is scanned in each scanning direction (FIG. 14). Irradiation was performed while shifting in the vertical direction (b). Next, after the irradiation in the vertical direction of FIG. 14B is completed, the irradiation region is shifted in the horizontal direction of FIG. 14B, and again, the irradiation region for each shot in the vertical direction of FIG. The fundamental wave of the YAG laser beam was irradiated under the same conditions while shifting.
  • a high-resistance convex portion 22 that is a residue of the transparent electrode layer 2 is formed in the overlapping portion of the irradiation region of the fundamental wave of the YAG laser light. It was. Then, the power density of the fundamental wave of the YAG laser beam in the formation portion of the convex portion 22, it was confirmed that the 10 W / cm 2 or more 160 W / cm 2 within the following ranges.
  • an electrode 12 for extracting current was formed on the surface of the back electrode layer 6 at both ends in the direction orthogonal to the longitudinal direction of the second separation groove 7.
  • a sealing material 9 made of an ionomer resin was placed on the cell region 11 and the insulating region 10.
  • a protective material 8 made of a three-layer laminated film of PET / Al / PET is placed on the surface of the sealing material 9, and the protective material 8 While the pressure was applied to the sealing material 9 from above, the sealing material 9 was heated at 100 ° C. or more for 60 minutes or less and then cooled. As a result, the protective material 8 was bonded to the cell region 11 and the insulating region 10 with the sealing material 9 to produce the thin film solar cell module of the example.
  • the insulation test of the thin-film solar cell module of the example is performed by using an insulation test apparatus 41 as shown in the schematic plan view of FIG. 16A and the schematic configuration diagram of FIG. It was. That is, as shown in FIG. 16 (b), the terminal 42 of the insulation test apparatus 41 is connected to the back electrode layer of the cell region 11 of the thin film solar cell module of the example, and the terminal in the direction of the arrow 46 by the pressing device 45. A voltage is applied between the back electrode layer of the cell region 11 and the terminal 43 in a state in which 43 is in contact with the entire periphery of the peripheral edge of the translucent substrate 1 of the thin film solar cell module of the example. The magnitude of the current flowing through was measured.
  • the insulating region 10 has an area of the surface of the thin film solar cell module of the example as X (m 2 ), and is 6000 (V) between the end of the translucent substrate 1 and the semiconductor photoelectric conversion layer 4. ) Is a region where the leakage current is less than 150 ⁇ X ( ⁇ A).
  • the insulating region 10 of the thin film solar cell module of the example is an insulating region.
  • the thin film solar cell module of the example has a greater peel strength of the sealing material 9 in the insulating region 10 at the periphery of the translucent substrate 1 than the thin film solar cell module of the comparative example. It was confirmed that the adhesive force was improved.
  • FIG. 18 the enlarged view of the relationship between the distance (mm) from the peripheral edge part of the translucent board
  • FIG. 19 the measurement result of the height of the convex part 22 of the distance (mm) part from the peripheral edge part of the translucent board
  • the height of the convex part 22 of the thin film solar cell module of the Example shown by FIG. 19 was measured using the level difference meter.
  • the peel strength of the sealing material 9 increases in the portion of the convex portion 22 of the thin film solar cell module of the example, and the adhesive strength of the sealing material 9 increases in this portion. It was confirmed.
  • the present invention comprises a light-transmitting substrate, a cell region provided on the light-transmitting substrate, a sealing material provided on the cell region, and a protective material provided on the sealing material.
  • the region includes a first electrode layer, a photoelectric conversion layer, and a second electrode layer, and has an insulating region that is a region where the peripheral surface of the light-transmitting substrate is exposed so as to surround the cell region.
  • the insulating region is a solar cell module having a convex portion made of a material different from that of the translucent substrate on the translucent substrate.
  • the convex portion contains at least one selected from the group consisting of tin, indium, and zinc and oxygen.
  • the material constituting the convex portion is suitably altered after irradiating the first light beam to the convex portion, and then the convex portion is preferably irradiated by irradiating the second light beam. The resistance can be increased.
  • the convex portions are formed in a substantially mesh shape.
  • the adhesive force between a convex part and a sealing material can be improved.
  • the convex portion extends substantially linearly in at least one direction.
  • the convex portions are connected so as to surround the cell region.
  • the convex portion and the sealing material can be bonded over the entire periphery of the translucent substrate, so that the adhesive force between the translucent substrate and the sealing material is further improved. Can be made.
  • the insulating region is preferably provided so that the distance from the peripheral edge of the translucent substrate to the cell region is 6 mm or more and 15 mm or less.
  • the sealing material preferably contains a silane coupling agent.
  • the convex portion has a height of 100 nm or more from the translucent substrate.
  • the present invention provides a step of forming a cell region having a first electrode layer, a photoelectric conversion layer, and a second electrode layer on a light-transmitting substrate, and irradiating the periphery of the cell region with a light beam. Exposing the peripheral surface of the translucent substrate so as to surround the cell region to form an insulating region that is an exposed region of the peripheral surface of the translucent substrate; and on the cell region and the insulating region In the step of forming an insulating region, after irradiating a first light beam having a power density of 10 W / cm 2 or more and 160 W / cm 2 or less.
  • a projection made of a material different from that of the light-transmitting substrate is formed on the light-transmitting substrate by irradiating the irradiation region of the first light beam with the second light beam. is there.
  • the low electroconductive convex part used as the residue of a transparent electrode layer can be suitably formed on the surface of the translucent board
  • the power density of the second light beam is preferably set to 10 W / cm 2 or more 160 W / cm 2 or less.
  • the high resistance convex part used as the residue of a transparent electrode layer can be formed more suitably.
  • the sealing material is heated at 100 ° C. or more and 60 minutes or less in the step of adhering the protective material.
  • the adhesion process of the protective material with respect to a sealing material can be performed more efficiently.
  • the present invention can be used for a solar cell module and a method for manufacturing a solar cell module.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne : un module de cellule solaire, une région isolante (10) possédant une section en saillie (22) sur un substrat translucide (1), ladite section en saillie étant formée d'un matériau différent de celui du substrat translucide (1); et un procédé de fabrication du module de cellule solaire. Par conséquent, le module de cellule solaire, qui est apte à assurer des caractéristiques d'isolation sur une extrémité circonférentielle sans réduire une surface d'une région de cellule efficace, et en outre, qui est apte à améliorer l'adhésion d'un matériau de scellage, et le procédé de fabrication du module de cellule solaire peuvent être fournis.
PCT/JP2013/079877 2012-12-28 2013-11-05 Module de cellule solaire et procédé de fabrication de module de cellule solaire WO2014103513A1 (fr)

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JP2012287473A JP2016033932A (ja) 2012-12-28 2012-12-28 太陽電池モジュールおよび太陽電池モジュールの製造方法
JP2012-287473 2012-12-28

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017117870A (ja) * 2015-12-22 2017-06-29 ソーラーフロンティア株式会社 太陽電池モジュール及びその製造方法

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JP2019067837A (ja) * 2017-09-29 2019-04-25 京セラ株式会社 太陽電池モジュール
JP7546213B2 (ja) * 2020-06-23 2024-09-06 パナソニックＩｐマネジメント株式会社 太陽電池、及び太陽電池の製造方法

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JP2000349325A (ja) * 1999-06-04 2000-12-15 Kanegafuchi Chem Ind Co Ltd 薄膜太陽電池モジュール
JP2007035695A (ja) * 2005-07-22 2007-02-08 Kaneka Corp 集積型薄膜太陽電池モジュール
WO2009051122A1 (fr) * 2007-10-19 2009-04-23 Kaneka Corporation Module de cellule solaire en couche mince
WO2012023260A1 (fr) * 2010-08-20 2012-02-23 三洋電機株式会社 Dispositif de conversion photoélectrique et son procédé de fabrication

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349325A (ja) * 1999-06-04 2000-12-15 Kanegafuchi Chem Ind Co Ltd 薄膜太陽電池モジュール
JP2007035695A (ja) * 2005-07-22 2007-02-08 Kaneka Corp 集積型薄膜太陽電池モジュール
WO2009051122A1 (fr) * 2007-10-19 2009-04-23 Kaneka Corporation Module de cellule solaire en couche mince
WO2012023260A1 (fr) * 2010-08-20 2012-02-23 三洋電機株式会社 Dispositif de conversion photoélectrique et son procédé de fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017117870A (ja) * 2015-12-22 2017-06-29 ソーラーフロンティア株式会社 太陽電池モジュール及びその製造方法

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