WO2013125143A1 - Procédé pour la fabrication d'un dispositif de conversion photoélectrique - Google Patents

Procédé pour la fabrication d'un dispositif de conversion photoélectrique Download PDF

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Publication number
WO2013125143A1
WO2013125143A1 PCT/JP2012/082902 JP2012082902W WO2013125143A1 WO 2013125143 A1 WO2013125143 A1 WO 2013125143A1 JP 2012082902 W JP2012082902 W JP 2012082902W WO 2013125143 A1 WO2013125143 A1 WO 2013125143A1
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photoelectric conversion
scribe line
electrode layer
layer
region
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PCT/JP2012/082902
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English (en)
Japanese (ja)
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幸大 宮本
智 中原
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シャープ株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a method for manufacturing a photoelectric conversion device.
  • Patent Document 1 Japanese Patent Laid-Open No. 2011-181826 discloses a method for manufacturing a thin film solar cell including the following steps (i) to (iv).
  • a transparent electrode layer is formed on a transparent insulating substrate, and a part of the transparent electrode layer is removed by laser light irradiation to form a first separation groove.
  • a photoelectric conversion layer is formed on the transparent electrode layer, a part of the photoelectric conversion layer is removed by laser light irradiation, and a second separation groove is formed.
  • a back electrode layer is formed on the photoelectric conversion layer, and a part of each of the photoelectric conversion layer and the back electrode layer is removed by laser light irradiation to form a scribe line.
  • Patent Document 2 Japanese Patent Laid-Open No. 2006-245507 discloses a method for manufacturing a thin film solar cell including the following steps (I) to (IV).
  • a transparent conductive film is formed on an insulating translucent substrate, and a part of the transparent conductive film is removed by laser light irradiation to form a first separation groove.
  • a back electrode is formed on the photoelectric conversion layer, and a part of each of the photoelectric conversion layer and the back electrode is removed by laser light irradiation to form a scribe line.
  • the step of forming the peripheral insulating region includes an electric shock accident due to leakage from a frame body such as an aluminum frame attached to the peripheral insulating region or an end of the transparent insulating substrate. It is essential to prevent.
  • the residue of the transparent conductive film, the photoelectric conversion layer, or the back electrode remains in a part of the peripheral insulating region, the appearance viewed from the insulating translucent substrate side may be impaired.
  • an insulation failure or an appearance failure may occur in the vicinity of the scribe line in the peripheral insulating region.
  • an object of the present invention is to provide a method for manufacturing a photoelectric conversion device capable of suppressing the occurrence of insulation failure or appearance failure in the vicinity of a scribe line in a peripheral insulating region.
  • the present invention relates to a transparent insulating substrate in which a transparent electrode layer, a photoelectric conversion layer, and a back electrode layer are laminated in this order, a transparent electrode layer, a photoelectric conversion layer, and a back electrode layer on the entire periphery of the transparent insulating substrate.
  • the method further includes a scribe line forming step of forming a scribe line by linearly removing the photoelectric conversion layer and the back electrode layer, and in the scribe line forming step, a peripheral insulating step In the region where the peripheral insulating region is formed, it is preferable to leave at least one of the photoelectric conversion layer and the back electrode layer.
  • the scribe line forming step includes a step of removing the photoelectric conversion layer and the back electrode layer by laser light irradiation to form a scribe line, and a peripheral insulating step in the peripheral insulating step. It is preferable that the region for forming the region includes a step of stopping the irradiation of the laser light.
  • the scribe line forming step includes a step of covering a region where the peripheral insulating region is formed in the peripheral insulating step with a mask, and a photoelectric conversion layer and a back electrode layer by laser light irradiation. And a step of forming a scribe line.
  • the method for producing a photoelectric conversion device of the present invention includes a step of laminating a photoelectric conversion layer on a transparent electrode layer laminated on a transparent insulating substrate, a step of laminating a back electrode layer on the photoelectric conversion layer, A part of each of the conversion layer and the back electrode layer is removed by laser light irradiation to form a scribe line, and the transparent electrode layer, the photoelectric conversion layer, and the back electrode layer on the entire periphery of the transparent insulating substrate are laser-treated. Forming a peripheral insulating region by removing the light by irradiating while moving the light. In the step of forming the peripheral insulating region, the moving speed of the laser beam may be reduced in the region where the scribe line is formed. preferable.
  • the moving speed of the laser beam is temporarily made zero in the scribe line forming region in the step of forming the peripheral insulating region.
  • the method for producing a photoelectric conversion device of the present invention further includes a step of forming a cross scribe line that intersects the scribe line by removing a part of each of the photoelectric conversion layer and the back electrode layer by laser light irradiation, In the step of forming the peripheral insulating region, it is preferable to reduce the moving speed of the laser light in the formation region of the intersecting scribe line.
  • the moving speed of the laser light is temporarily made zero in the formation region of the cross scribe line in the step of forming the peripheral insulating region.
  • the present invention it is possible to provide a method for manufacturing a photoelectric conversion device that can suppress the occurrence of insulation failure or appearance failure in the vicinity of the scribe line in the peripheral insulating region.
  • FIG. 6 is a schematic cross-sectional view illustrating an example of a part of the manufacturing process of the method for manufacturing the photoelectric conversion device according to Embodiments 1 and 3.
  • FIG. 6 is a schematic cross-sectional view illustrating an example of a part of the manufacturing process of the method for manufacturing the photoelectric conversion device according to Embodiments 1 and 3.
  • FIG. 6 is a schematic cross-sectional view illustrating an example of a part of the manufacturing process of the method for manufacturing the photoelectric conversion device according to Embodiments 1 and 3.
  • FIG. 6 is a schematic cross-sectional view illustrating an example of a part of the manufacturing process of the method for manufacturing the photoelectric conversion device according to Embodiments 1 and 3.
  • FIG. 6 is a schematic cross-sectional view illustrating an example of a part of the manufacturing process of the method for manufacturing the photoelectric conversion device according to Embodiments 1 and 3.
  • FIG. 6 is a schematic cross-sectional view illustrating an example of a part of the manufacturing process of the method for manufacturing the photoelectric conversion device according to Embodiments 1 and 3.
  • FIG. 6 is a schematic cross-sectional view illustrating an example of a part of the manufacturing process of the method for manufacturing the photoelectric conversion device according to Embodiments 1 and 3.
  • FIG. 3 is a schematic plan view illustrating an example of a part of the manufacturing process of the photoelectric conversion device manufacturing method according to the first embodiment.
  • FIG. 6 is a schematic cross-sectional view illustrating an example of a part of the manufacturing process of the method for manufacturing the photoelectric conversion device according to Embodiments 1 and 3.
  • FIG. 6 is a schematic plan view illustrating an example of a part of the manufacturing process of the manufacturing method of the photoelectric conversion device according to Embodiments 1 and 3.
  • FIG. It is the typical top view which looked at the transparent insulation board
  • FIG. 6 is a schematic plan view illustrating another example of a part of the manufacturing process of the photoelectric conversion device manufacturing method according to the first embodiment.
  • FIG. 10 is a schematic plan view illustrating an example of a part of the manufacturing process of the photoelectric conversion device manufacturing method according to the second embodiment.
  • FIG. 12 is a schematic plan view illustrating another example of a part of the manufacturing process of the method for manufacturing the photoelectric conversion device according to the second embodiment.
  • FIG. 12 is a schematic plan view illustrating still another example of part of the manufacturing process of the method for manufacturing the photoelectric conversion device according to the second embodiment.
  • FIG. 10 is a schematic enlarged plan view illustrating an example of a part of the manufacturing process of the method for manufacturing the photoelectric conversion device according to the third embodiment.
  • FIG. 10 is a schematic plan view illustrating an example of a part of the manufacturing process of the photoelectric conversion device manufacturing method according to the fourth embodiment.
  • FIG. 10 is a schematic plan view illustrating an example of a part of the manufacturing process of the photoelectric conversion device manufacturing method according to the fourth embodiment.
  • FIG. 10 is a schematic enlarged plan view illustrating an example of a part of the manufacturing process of the photoelectric conversion device manufacturing method according to the fourth embodiment.
  • the transparent electrode layer 2 is laminated on the transparent insulating substrate 1.
  • a glass substrate etc. can be used, for example.
  • the transparent electrode layer 2 for example, a layer made of SnO 2 (tin oxide), ITO (Indium Tin Oxide) or ZnO (zinc oxide) can be used.
  • the formation method of the transparent electrode layer 2 is not specifically limited, For example, conventionally well-known thermal CVD method, sputtering method, a vapor deposition method, or an ion plating method etc. can be used.
  • a fundamental wave (wavelength: 1064 nm) of YAG (Yttrium Aluminum Garnet) laser beam or a fundamental wave (wavelength: 1064 nm) of YVO 4 (Yttrium Orthovanadate) laser beam is used. It is preferable to use it.
  • the surface of the transparent insulating substrate 1 is subjected to ultrasonic cleaning using pure water, for example, and then the transparent electrode layer 2 separated by the first separation groove 5.
  • the photoelectric conversion layer 3 is laminated so as to cover.
  • a semiconductor photoelectric conversion layer can be used as the photoelectric conversion layer 3.
  • a top cell in which a p layer, an i layer, and an n layer made of an amorphous silicon thin film are stacked in this order from the transparent insulating substrate 1 side.
  • Conversion layer and a bottom cell (second photoelectric conversion layer) in which a p layer, an i layer, and an n layer made of a microcrystalline silicon thin film are stacked in this order can be stacked on the top cell by, for example, a plasma CVD method. .
  • the photoelectric conversion layer 3 includes, for example, a top cell (first photoelectric conversion layer) in which a p layer, an i layer, and an n layer made of an amorphous silicon thin film are stacked in this order from the transparent insulating substrate 1 side, and a top cell.
  • a middle cell second photoelectric conversion layer in which a p layer, an i layer and an n layer made of an amorphous silicon thin film are laminated in this order, and a p layer, an i layer and an n layer made of a microcrystalline silicon thin film are formed on the middle cell.
  • the bottom cell (third photoelectric conversion layer) stacked in order may be stacked by, for example, a plasma CVD method. Note that the number of photoelectric conversion layers can be increased.
  • the photoelectric conversion layers from the first photoelectric conversion layer to the third photoelectric conversion layer may all be made of the same type of silicon-based semiconductor, or may be made of different types of silicon-based semiconductor.
  • each photoelectric conversion layer from the first photoelectric conversion layer to the third photoelectric conversion layer includes a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, respectively, the p-type semiconductor layer and the i-type semiconductor layer and the i-type semiconductor
  • Each semiconductor layer of the layer and the n-type semiconductor layer may be made of a silicon-based semiconductor, for example.
  • Each semiconductor layer included in the photoelectric conversion layer 3 may be made of the same kind of silicon-based semiconductor, or may be made of different types of silicon-based semiconductor.
  • the p-type semiconductor layer and the i-type semiconductor layer may be formed of amorphous silicon, and the n-type semiconductor layer may be formed of microcrystalline silicon.
  • the p-type semiconductor layer and the n-type semiconductor layer may be formed of silicon carbide or silicon germanium, and the i-type semiconductor layer may be formed of silicon.
  • each of the p-type, i-type and n-type semiconductor layers may have a single-layer structure or a multi-layer structure.
  • each semiconductor layer may be composed of different types of silicon-based semiconductors.
  • the concept of an amorphous silicon thin film includes a thin film made of a hydrogenated amorphous silicon-based semiconductor (a-Si: H) in which dangling bonds of silicon are terminated with hydrogen.
  • the concept of a microcrystalline silicon thin film includes a thin film made of a hydrogenated microcrystalline silicon-based semiconductor ( ⁇ c-Si: H) in which dangling bonds of silicon are terminated with hydrogen.
  • the thickness of the photoelectric conversion layer 3 is not particularly limited, and can be, for example, 200 nm or more and 5 ⁇ m or less.
  • the formation method of the photoelectric conversion layer 3 is not limited to the plasma CVD method.
  • the laser light is linearly moved in the extending direction of the first separation groove 5 and irradiated from the transparent insulating substrate 1 side and / or the photoelectric conversion layer 3 side.
  • a part of the photoelectric conversion layer 3 is removed in a stripe shape, and a second separation groove 6 for separating the photoelectric conversion layer 3 is formed.
  • the laser beam used for forming the second separation groove 6 it is preferable to use the second harmonic (wavelength: 532 nm) of the YAG laser beam or the second harmonic (wavelength: 532 nm) of the YVO 4 laser beam. Since the second harmonic of the YAG laser light and the second harmonic of the YVO 4 laser light tend to pass through the transparent insulating substrate 1 and the transparent electrode layer 2 and be absorbed by the photoelectric conversion layer 3, respectively, the photoelectric conversion layer 3 The photoelectric conversion layer 3 tends to be selectively evaporated by heating.
  • the back electrode layer 4 is laminated so as to cover the photoelectric conversion layer 3. Thereby, as shown in FIG. 5, the second separation groove 6 is filled with the back electrode layer 4.
  • the back electrode layer 4 for example, a laminate of a metal thin film made of silver or aluminum and a transparent conductive film such as ZnO can be used.
  • the thickness of the metal thin film can be, for example, 100 nm or more and 1 ⁇ m or less
  • the thickness of the transparent conductive film can be, for example, 20 nm or more and 200 nm or less.
  • the back electrode layer 4 only a single metal thin film layer or a plurality of metal thin film layers may be used.
  • the method for forming the back electrode layer 4 is not particularly limited, and for example, a sputtering method or the like can be used.
  • laser light is directed in the extending direction of the first separation groove 5 and the second separation groove 6 from the transparent insulating substrate 1 side and / or the back electrode layer 4 side.
  • a scribe line 7 is formed by removing a part of the photoelectric conversion layer 3 and the back electrode layer 4 in a stripe shape by moving in a straight line and irradiating the photoelectric conversion layer 3 and the back electrode layer 4.
  • a line forming process is performed.
  • the laser light used for forming the scribe line 7 it is preferable to use the second harmonic (wavelength: 532 nm) of the YAG laser light or the second harmonic (wavelength: 532 nm) of the YVO 4 laser light. Since the second harmonic of the YAG laser light and the second harmonic of the YVO 4 laser light tend to pass through the transparent insulating substrate 1 and the transparent electrode layer 2 and be absorbed by the photoelectric conversion layer 3, respectively, the photoelectric conversion layer 3 Is selectively heated, and the photoelectric conversion layer 3 and the back electrode layer 4 tend to be selectively evaporated.
  • the region 9 where the peripheral insulating region is formed in the peripheral insulating step for forming the peripheral insulating region described later is irradiated with laser light.
  • the scribe line 7 is formed so that at least one of the photoelectric conversion layer 3 and the back electrode layer 4 is left in the region 9 where the peripheral insulating region is formed in the peripheral insulating step.
  • the transparent electrode layer 2, the photoelectric conversion layer 3, and the back electrode layer 4 on the entire periphery of the transparent insulating substrate 1 are removed by laser light irradiation to thereby perform peripheral insulation.
  • a peripheral insulating process for forming the region 10 is performed. Accordingly, as shown in the schematic plan view of FIG. 9, the peripheral insulating region in which the surface of the transparent insulating substrate 1 is exposed so as to surround the string 12 in which the adjacent power generation cells 11 are sequentially connected in series. 10 is formed, and the photoelectric conversion device of Embodiment 1 can be manufactured.
  • the peripheral insulating step at least one of the photoelectric conversion layer 3 and the back electrode layer 4 exists in the region where the peripheral insulating region 10 is formed.
  • the laser light used for forming the peripheral insulating region 10 it is preferable to use the fundamental wave of YAG laser light (wavelength: 1064 nm) or the fundamental wave of YVO 4 laser light (wavelength: 1064 nm). Further, since the peripheral insulating region 10 is generally formed wide, the irradiation width of the laser light (the length in the direction orthogonal to the moving direction of the laser light) is preferably 150 ⁇ m or more, and preferably 400 ⁇ m or more. Is more preferable. Further, when the peripheral insulating region 10 is formed, the laser beam can be irradiated from the transparent insulating substrate 1 side and / or the back electrode layer 4 side.
  • the intensity distribution of the laser light is preferably a rectangular distribution in each of the moving direction and the width direction of the laser light.
  • an optical system using a galvano scan or an optical system using a square fiber can be used without any particular limitation.
  • a transparent adhesive made of, for example, an EVA sheet or the like is placed on the surface of the back electrode layer 4 after the current extraction electrode is formed, and the transparent adhesive is, for example, PET (polyester) / Al (aluminum) / PET.
  • the irradiation of the laser beam is stopped in the region 9 where the peripheral insulating region 10 is formed in the peripheral insulating step.
  • the scribe line 7 is formed so that at least one of the photoelectric conversion layer 3 and the back electrode layer 4 remains.
  • peripheral insulation is achieved by removing the transparent electrode layer, the photoelectric conversion layer, and the back electrode layer by laser light irradiation.
  • a residue 111 of the transparent electrode layer remains in the vicinity of the scribe line 107 of the peripheral insulating region 110, and this residue 111 is converted into the peripheral insulating region. This is because it has been determined that this is the cause of an insulation failure or an appearance failure in the vicinity of 110 scribe line 107.
  • the irradiation of the laser beam is stopped, so that the region before the peripheral insulating region 10 is formed.
  • the transparent electrode layer 2 but also at least one of the photoelectric conversion layer 3 and the back electrode layer 4 can be left on the entire circumference of the transparent insulating substrate 1.
  • the energy of the laser beam irradiated at the time of forming the peripheral insulating region 10 is sufficiently absorbed not only in the transparent electrode layer 2 but also in at least one of the photoelectric conversion layer 3 and the back electrode layer 4 to be converted into thermal energy. Therefore, generation
  • the present invention is not limited to this method. .
  • the region 9 where the peripheral insulating area 10 is formed in the peripheral insulating process is covered with a mask 13 such as a metal plate. Irradiation can remove the photoelectric conversion layer 3 and the back electrode layer 4 to form the scribe line 7.
  • the transparent electrode layer 2 not only the transparent electrode layer 2 but also at least one of the photoelectric conversion layer 3 and the back electrode layer 4 can be left on the entire periphery of the transparent insulating substrate 1 before the formation of the peripheral insulating region 10, Since generation
  • the adjustment method of the irradiation position of the laser beam at the time of formation of the scribe line 7 is not specifically limited,
  • the method of adjusting by alignment of the transparent insulating substrate 1 on the stage of a laser scribing apparatus, the transparent insulating substrate 1 Use a method of detecting the end in advance and adjusting the distance from the end of the transparent insulating substrate 1 or adjusting using an alignment mark formed when the first separation groove 5 is formed. Can do.
  • the first separation groove 5 and the second separation groove 6 may be formed in the region 9 where the peripheral insulating region 10 is formed in the peripheral insulating step.
  • a cross scribe line that intersects the scribe line 7 is formed, and at the time of forming the cross scribe line, the region 9 in which the peripheral insulating region 10 is formed in the peripheral insulating step.
  • a step of forming the intersecting scribe line 8 by forming the intersecting scribe line 8 intersecting with the scribe line 7 is performed.
  • the irradiation of the laser beam is stopped in the region 9 where the peripheral insulating region 10 is formed in the peripheral insulating step.
  • the laser light can be irradiated from the transparent insulating substrate 1 side and / or the back electrode layer 4 side.
  • peripheral insulation is achieved by removing the transparent electrode layer, the photoelectric conversion layer, and the back electrode layer by laser light irradiation.
  • the transparent electrode layer residue remains not only in the vicinity of the scribe line but also in the vicinity of the cross scribe line, and this residue is in the vicinity of the scribe line and the cross scribe line in the peripheral insulating region. This is because it has been found that this is the cause of an insulation failure or an appearance failure.
  • the region where the peripheral insulating region 10 is formed in the step of forming the peripheral insulating region 10. 9 by stopping the laser light irradiation, not only the transparent electrode layer 2 but also at least one of the photoelectric conversion layer 3 and the back electrode layer 4 can be left in the region 9.
  • the laser beam irradiated at the time of forming the peripheral insulating region 10 in both the step of forming the scribe line 7 and the step of forming the intersecting scribe line 8. Can be absorbed not only in the transparent electrode layer 2 but also in at least one of the photoelectric conversion layer 3 and the back electrode layer 4 to be converted into thermal energy, thereby suppressing the generation of residues in the transparent electrode layer 2 In addition, it is possible to suppress the occurrence of poor insulation or poor appearance in the vicinity of the scribe line 7 and the cross scribe line 8 in the peripheral insulating region 10.
  • the angle formed between the scribe line 7 and the intersecting scribe line 8 can be set to 90 ° ⁇ 10 °, for example.
  • the photoelectric conversion layer 3 and the back electrode layer 4 may be removed by laser light irradiation, and the transparent electrode layer 2, the photoelectric conversion layer 3, and the back electrode layer 4 may be removed. All may be removed by laser light irradiation.
  • the second scribe line 8 by removing all of the transparent electrode layer 2, the photoelectric conversion layer 3, and the back electrode layer 4 by laser light irradiation in the step of forming the intersecting scribe line 8 It is not necessary to form the intersecting scribe lines 8 by the above method.
  • the method of adjusting the type of laser light and the irradiation position of the laser light at the time of forming the second scribe line 8 is not particularly limited, and for example, the same type of laser light and laser light as at the time of forming the scribe line 7 are used. An irradiation position adjustment method or the like can be used.
  • the forming method is not limited to this method.
  • the region 9 in which the peripheral insulating region 10 is formed in the peripheral insulating step is covered with a mask 13 such as a metal plate.
  • the cross scribe line 8 can also be formed by irradiating laser light.
  • the transparent electrode layer 2 not only the transparent electrode layer 2 but also at least one of the photoelectric conversion layer 3 and the back electrode layer 4 can be left on the entire periphery of the transparent insulating substrate 1 before the formation of the peripheral insulating region 10, Since generation
  • the cross scribe line 8 when the cross scribe line 8 is formed, it is not necessary to finely adjust the stop position of the laser beam irradiation. Therefore, the insulation defect or the appearance defect in the vicinity of the cross scribe line 8 in the peripheral insulating region 10 is eliminated. The reproducibility of occurrence suppression can be improved.
  • the region 9 in which the peripheral insulating region 10 is formed in the peripheral insulating step is covered in advance with a mask 13 such as a metal plate, and laser light is irradiated in this state.
  • the scribe line 7 and the intersecting scribe line 8 can also be formed.
  • not only the transparent electrode layer 2 but also at least one of the photoelectric conversion layer 3 and the back electrode layer 4 can be left in the region 9 where the peripheral insulating region 10 is formed in the peripheral insulating step.
  • production of the residue of the layer 2 can be suppressed and generation
  • a transparent electrode layer 2 is laminated on a transparent insulating substrate 1.
  • a transparent insulating substrate a glass substrate etc. can be used, for example.
  • the transparent electrode layer 2 for example, a layer made of SnO 2 (tin oxide), ITO (Indium Tin Oxide) or ZnO (zinc oxide) can be used.
  • the formation method of the transparent electrode layer 2 is not specifically limited, For example, conventionally well-known thermal CVD method, sputtering method, a vapor deposition method, or an ion plating method etc. can be used.
  • the transparent electrode layer corresponding to the irradiated portion of the laser beam is irradiated by moving the laser beam linearly from the transparent insulating substrate 1 side and / or the transparent electrode layer 2 side.
  • a part of 2 is removed in a stripe shape to form a first separation groove 5 for separating the transparent electrode layer 2.
  • a fundamental wave (wavelength: 1064 nm) of YAG (Yttrium Aluminum Garnet) laser beam or a fundamental wave (wavelength: 1064 nm) of YVO 4 (Yttrium Orthovanadate) laser beam is used. It is preferable to use it. Since the fundamental wave of YAG laser light and the fundamental wave of YVO 4 laser light tend to pass through the transparent insulating substrate 1 and be absorbed by the transparent electrode layer 2, the transparent electrode layer 2 is selectively heated to evaporate. It tends to be able to be made.
  • the surface of the transparent insulating substrate 1 is subjected to ultrasonic cleaning using pure water, for example, and then photoelectrically covered so as to cover the transparent electrode layer 2 separated by the first separation groove 5.
  • the conversion layer 3 is laminated.
  • a semiconductor photoelectric conversion layer can be used as the photoelectric conversion layer 3.
  • a top cell in which a p layer, an i layer, and an n layer made of an amorphous silicon thin film are stacked in this order from the transparent insulating substrate 1 side.
  • Conversion layer and a bottom cell (second photoelectric conversion layer) in which a p layer, an i layer, and an n layer made of a microcrystalline silicon thin film are stacked in this order can be stacked on the top cell by, for example, a plasma CVD method. .
  • the photoelectric conversion layer 3 includes, for example, a top cell (first photoelectric conversion layer) in which a p layer, an i layer, and an n layer made of an amorphous silicon thin film are stacked in this order from the transparent insulating substrate 1 side, and a top cell.
  • a middle cell second photoelectric conversion layer in which a p layer, an i layer and an n layer made of an amorphous silicon thin film are laminated in this order, and a p layer, an i layer and an n layer made of a microcrystalline silicon thin film are formed on the middle cell.
  • the bottom cell (third photoelectric conversion layer) stacked in order may be stacked by, for example, a plasma CVD method. Note that the number of photoelectric conversion layers can be increased.
  • the photoelectric conversion layers from the first photoelectric conversion layer to the third photoelectric conversion layer may all be made of the same type of silicon-based semiconductor, or may be made of different types of silicon-based semiconductor.
  • each photoelectric conversion layer from the first photoelectric conversion layer to the third photoelectric conversion layer includes a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, respectively, the p-type semiconductor layer and the i-type semiconductor layer and the i-type semiconductor
  • Each semiconductor layer of the layer and the n-type semiconductor layer may be made of, for example, a silicon-based semiconductor.
  • Each semiconductor layer included in the photoelectric conversion layer 3 may be made of the same kind of silicon-based semiconductor, or may be made of different types of silicon-based semiconductor.
  • the p-type semiconductor layer and the i-type semiconductor layer may be formed of amorphous silicon, and the n-type semiconductor layer may be formed of microcrystalline silicon.
  • the p-type semiconductor layer and the n-type semiconductor layer may be formed of silicon carbide or silicon germanium, and the i-type semiconductor layer may be formed of silicon.
  • each of the p-type, i-type and n-type semiconductor layers may have a single-layer structure or a multi-layer structure.
  • each semiconductor layer may be composed of different types of silicon-based semiconductors.
  • the concept of an amorphous silicon thin film includes a thin film made of a hydrogenated amorphous silicon-based semiconductor (a-Si: H) in which dangling bonds of silicon are terminated with hydrogen.
  • the concept of a microcrystalline silicon thin film includes a thin film made of a hydrogenated microcrystalline silicon-based semiconductor ( ⁇ c-Si: H) in which dangling bonds of silicon are terminated with hydrogen.
  • the thickness of the photoelectric conversion layer 3 is not particularly limited, and can be, for example, 200 nm or more and 5 ⁇ m or less.
  • the formation method of the photoelectric conversion layer 3 is not limited to the plasma CVD method.
  • the laser light is linearly moved in the extending direction of the first separation groove 5 and irradiated from the transparent insulating substrate 1 side and / or the photoelectric conversion layer 3 side.
  • a part of the conversion layer 3 is removed in a stripe shape to form a second separation groove 6 that separates the photoelectric conversion layer 3.
  • the laser beam used for forming the second separation groove 6 it is preferable to use the second harmonic (wavelength: 532 nm) of the YAG laser beam or the second harmonic (wavelength: 532 nm) of the YVO 4 laser beam. Since the second harmonic of the YAG laser light and the second harmonic of the YVO 4 laser light tend to pass through the transparent insulating substrate 1 and the transparent electrode layer 2 and be absorbed by the photoelectric conversion layer 3, respectively, the photoelectric conversion layer 3 The photoelectric conversion layer 3 tends to be selectively evaporated by heating.
  • the back electrode layer 4 is laminated so as to cover the photoelectric conversion layer 3. Thereby, as shown in FIG. 5, the second separation groove 6 is filled with the back electrode layer 4.
  • the back electrode layer 4 for example, a laminate of a metal thin film made of silver or aluminum and a transparent conductive film such as ZnO can be used.
  • the thickness of the metal thin film can be, for example, 100 nm or more and 1 ⁇ m or less
  • the thickness of the transparent conductive film can be, for example, 20 nm or more and 200 nm or less.
  • the back electrode layer 4 only a single metal thin film layer or a plurality of metal thin film layers may be used.
  • the method for forming the back electrode layer 4 is not particularly limited, and for example, a sputtering method or the like can be used.
  • the laser beam is linearly moved in the extending direction of the first separation groove 5 and the second separation groove 6 from the transparent insulating substrate 1 side and / or the back electrode layer 4 side.
  • a part of the photoelectric conversion layer 3 and the back electrode layer 4 is removed in a stripe shape, and a scribe line 7 for separating the photoelectric conversion layer 3 and the back electrode layer 4 is formed.
  • the laser light used for forming the scribe line 7 it is preferable to use the second harmonic (wavelength: 532 nm) of the YAG laser light or the second harmonic (wavelength: 532 nm) of the YVO 4 laser light. Since the second harmonic of the YAG laser light and the second harmonic of the YVO 4 laser light tend to pass through the transparent insulating substrate 1 and the transparent electrode layer 2 and be absorbed by the photoelectric conversion layer 3, respectively, the photoelectric conversion layer 3 Is selectively heated, and the photoelectric conversion layer 3 and the back electrode layer 4 tend to be selectively evaporated.
  • the transparent electrode layer 2, the photoelectric conversion layer 3, and the back electrode layer 4 on the entire periphery of the transparent insulating substrate 1 are removed by irradiation while moving the laser beam.
  • the peripheral insulating region 10 is formed so that the surface of the transparent insulating substrate 1 is exposed so as to surround the string 12 in which the adjacent power generation cells 11 are sequentially connected in series.
  • the photoelectric conversion device of Embodiment 3 can be manufactured.
  • the laser light used for forming the peripheral insulating region 10 it is preferable to use the fundamental wave of YAG laser light (wavelength: 1064 nm) or the fundamental wave of YVO 4 laser light (wavelength: 1064 nm). Since the fundamental wave of the YAG laser beam and the fundamental wave of the YVO 4 laser beam tend to pass through the transparent insulating substrate 1 and be absorbed by the transparent electrode layer 2, the transparent electrode layer 2 is selectively heated to be transparent. The electrode layer 2, the photoelectric conversion layer 3, and the back electrode layer 4 tend to evaporate and be removed.
  • the irradiation width of the laser light (the length in the direction orthogonal to the moving direction of the laser light) is preferably 150 ⁇ m or more, and preferably 400 ⁇ m or more. Is more preferable. Further, when the peripheral insulating region 10 is formed, the laser beam can be irradiated from the transparent insulating substrate 1 side and / or the back electrode layer 4 side.
  • a transparent adhesive made of, for example, an EVA sheet or the like is placed on the surface of the back electrode layer 4 after the current extraction electrode is formed, and the transparent adhesive is, for example, PET (polyester) / Al (aluminum) / PET.
  • the scribe line 7 is formed in the formation region of the scribe line 7 when the peripheral insulating region 10 is formed.
  • the transparent electrode layer 2 and the photoelectric conversion are performed by irradiating the laser beam by reducing the moving speed of the laser beam (that is, by narrowing the interval of the laser beam irradiation region 14) as compared with the region that is not formed.
  • the peripheral insulating region 10 is formed by evaporating the layer 3 and the back electrode layer 4.
  • peripheral insulation is achieved by removing the transparent electrode layer, the photoelectric conversion layer, and the back electrode layer by laser light irradiation.
  • a residue 111 of the transparent electrode layer remains in the vicinity of the scribe line 107 of the peripheral insulating region 110, and this residue 111 is converted into the peripheral insulating region. This is because it has been determined that this is the cause of an insulation failure or an appearance failure in the vicinity of 110 scribe line 107.
  • the moving speed of the laser beam is reduced in the region where the scribe line 7 is formed compared to the region where the scribe line 7 is not formed. , The amount of energy applied to the formation region of the scribe line 7 is increased, and the removal capability by laser light irradiation is locally improved. Thereby, since it can suppress that the transparent electrode layer 2 remains as a residue in the formation area of the scribe line 7, generation
  • the moving speed of the laser light in the region where the scribe line 7 is not formed when the peripheral insulating region 10 is formed is preferably 10 mm / second or more and 400 mm / second or less, and 50 mm / second or more and 150 mm / second or less. It is more preferable that it is 80 mm / second or more and 110 mm / second or less.
  • the moving speed of the laser light in the region where the scribe line 7 is not formed when the peripheral insulating region 10 is formed is 10 mm / second or more and 400 mm / second or less, more preferably 50 mm / second or more and 150 mm / second or less.
  • the transparent electrode layer 2, the photoelectric conversion layer 3, and the back electrode layer 4 can be removed more efficiently and more reliably. Tends to be formed more efficiently.
  • the moving speed of the laser light in the region where the scribe line 7 is formed when the peripheral insulating region 10 is formed is lower than the moving speed of the laser light in the region where the scribe line 7 is not formed and is 5 mm / second or more. It is preferably 200 mm / second or less, more preferably 10 mm / second or more and 100 mm / second or less, and further preferably 50 mm / second or more and 90 mm / second or less.
  • the moving speed of the laser light in the region where the scribe line 7 is formed is lower than the moving speed of the laser light in the region where the scribe line 7 is not formed, and is 5 mm / second or more and 200 mm / second.
  • the transparent electrode layer 2 of the scribe line 7 is more efficiently and more reliable. Therefore, the peripheral insulating region 10 tends to be formed more efficiently.
  • the moving speed of the laser light is temporarily made zero in the region where the scribe line 7 is formed. In this case, the transparent electrode layer 2 tends to be removed more reliably.
  • the adjustment method of the irradiation position of the laser beam at the time of formation of the peripheral insulating region 10 is not specifically limited, For example, the method of adjusting by the alignment of the transparent insulating substrate 1 on the stage of a laser scribing apparatus, the transparent insulating substrate 1 A method of detecting the end portion of the transparent insulating substrate 1 in advance and adjusting it at a predetermined distance from the end portion of the transparent insulating substrate 1 or a method of adjusting using an alignment mark formed at the time of forming the first separation groove 5 is used. be able to.
  • a cross scribe line intersecting the scribe line 7 is formed, and not only the formation region of the scribe line 7 but also the formation of the cross scribe line is formed when the peripheral insulating region 10 is formed. Even in the region, the moving speed of the laser beam is reduced.
  • the same processes as those of the third embodiment are performed until the scribe line 7 is formed.
  • an intersecting scribe line 8 that intersects the scribe line 7 is formed.
  • the laser beam can be irradiated from the transparent insulating substrate 1 side and / or the back electrode layer 4 side.
  • the peripheral insulating region 10 where the surface of the transparent insulating substrate 1 is exposed is formed so as to surround the periphery of the string 12 in which the adjacent power generation cells 11 are sequentially connected in series.
  • a conversion device can be made.
  • the region where the scribe line 7 is formed is compared with the region where the scribe line 7 is not formed. Then, the transparent electrode layer 2, the photoelectric conversion layer 3, and the back electrode layer are irradiated by irradiating the laser beam by reducing the moving speed of the laser beam (that is, by narrowing the interval between the laser beam irradiation regions 14). 4 is evaporated to form the peripheral insulating region 10.
  • the moving speed of the laser beam is reduced (that is, the interval between the laser beam irradiation regions 14 is narrowed) and the transparent electrode layer 2 is irradiated with the laser beam. Then, the photoelectric conversion layer 3 and the back electrode layer 4 are evaporated to form the peripheral insulating region 10.
  • peripheral insulation is achieved by removing the transparent electrode layer, the photoelectric conversion layer, and the back electrode layer by laser light irradiation.
  • the transparent electrode layer residue remains not only in the vicinity of the scribe line but also in the vicinity of the cross scribe line, and this residue is in the vicinity of the scribe line and the cross scribe line in the peripheral insulating region. This is because it has been found that this is the cause of an insulation failure or an appearance failure.
  • the region where the scribe line 7 and the cross scribe line 8 are formed is compared with the region where the scribe line 7 and the cross scribe line 8 are not formed. Then, by irradiating the laser beam while reducing the moving speed of the laser beam, the amount of energy applied to the formation region of the scribe line 7 and the intersecting scribe line 8 is increased, and the removal capability by the laser beam irradiation is locally improved. .
  • the photoelectric conversion layer 3 and the back electrode layer 4 may be removed by laser light irradiation, and all of the transparent electrode layer 2, the photoelectric conversion layer 3, and the back electrode layer 4 are removed. May be removed by laser light irradiation. Only when the photoelectric conversion layer 3 and the back electrode layer 4 are removed by laser light irradiation to form the cross scribe line 8, the laser beam is formed in the formation region of the cross scribe line 8 when forming the peripheral insulating region 10. It is only necessary to irradiate the laser beam at a lower moving speed.
  • the method of adjusting the type of laser light and the irradiation position of the laser light when forming the intersecting scribe line 8 is not particularly limited, and for example, the same type of laser light and the irradiation position of the laser light as when forming the scribe line 7 are used. Can be used.
  • the moving speed of the laser light in the formation area of the cross scribe line 8 when forming the peripheral insulating region 10 is lower than the moving speed of the laser light in the area where the scribe line 7 and the cross scribe line 8 are not formed.
  • it is preferably 5 mm / second or more and 200 mm / second or less, more preferably 10 mm / second or more and 100 mm / second or less, and further preferably 50 mm / second or more and 90 mm / second or less.
  • the moving speed of the laser light in the region where the cross scribe line 8 is formed is lower than the moving speed of the laser light in the region where the scribe line 7 and the cross scribe line 8 are not formed, and 5 mm.
  • Transparent electrode layer 2 of the crossed scribe line 8 when it is 10 mm / second or more and 200 mm / second or less, more preferably 10 mm / second or more and 100 mm / second or less, particularly 50 mm / second or more and 90 mm / second or less. Therefore, the peripheral insulating region 10 tends to be formed more efficiently.
  • the moving speed of the laser light is temporarily reduced to zero in the region where the cross scribe line 8 is formed. In this case, the transparent electrode layer 2 tends to be removed more reliably.
  • the present invention can be used for a method for manufacturing a photoelectric conversion device, and can be particularly preferably used for a method for manufacturing a thin film solar cell.

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Abstract

La présente invention concerne un procédé pour la fabrication d'un dispositif de conversion photoélectrique, dans lequel une couche de conversion photoélectrique (3) et/ou une couche d'électrode de côté arrière (4) sont présentes dans une région dans laquelle une région isolée de la périphérie (10) doit être formée lors de la réalisation d'une étape d'isolement de périphérie.
PCT/JP2012/082902 2012-02-23 2012-12-19 Procédé pour la fabrication d'un dispositif de conversion photoélectrique WO2013125143A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105855711A (zh) * 2015-01-09 2016-08-17 位元奈米科技股份有限公司 透明导电板的激光蚀刻方法及其所制成的透明导电板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186573A (ja) * 1997-12-24 1999-07-09 Kanegafuchi Chem Ind Co Ltd 集積型薄膜光電変換装置の製造方法
JP2001111078A (ja) * 1999-10-13 2001-04-20 Sharp Corp 薄膜太陽電池の製造装置
JP2006253417A (ja) * 2005-03-10 2006-09-21 Mitsubishi Heavy Ind Ltd 太陽電池パネル及び太陽電池パネルの製造方法
JP2008109041A (ja) * 2006-10-27 2008-05-08 Sharp Corp 薄膜太陽電池および薄膜太陽電池の製造方法
WO2009139389A1 (fr) * 2008-05-15 2009-11-19 株式会社アルバック Procédé de fabrication de module de pile solaire à couches minces et module de pile solaire à couches minces

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186573A (ja) * 1997-12-24 1999-07-09 Kanegafuchi Chem Ind Co Ltd 集積型薄膜光電変換装置の製造方法
JP2001111078A (ja) * 1999-10-13 2001-04-20 Sharp Corp 薄膜太陽電池の製造装置
JP2006253417A (ja) * 2005-03-10 2006-09-21 Mitsubishi Heavy Ind Ltd 太陽電池パネル及び太陽電池パネルの製造方法
JP2008109041A (ja) * 2006-10-27 2008-05-08 Sharp Corp 薄膜太陽電池および薄膜太陽電池の製造方法
WO2009139389A1 (fr) * 2008-05-15 2009-11-19 株式会社アルバック Procédé de fabrication de module de pile solaire à couches minces et module de pile solaire à couches minces

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105855711A (zh) * 2015-01-09 2016-08-17 位元奈米科技股份有限公司 透明导电板的激光蚀刻方法及其所制成的透明导电板

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