WO2014103463A1 - ワイヤボンディング装置 - Google Patents

ワイヤボンディング装置 Download PDF

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Publication number
WO2014103463A1
WO2014103463A1 PCT/JP2013/077068 JP2013077068W WO2014103463A1 WO 2014103463 A1 WO2014103463 A1 WO 2014103463A1 JP 2013077068 W JP2013077068 W JP 2013077068W WO 2014103463 A1 WO2014103463 A1 WO 2014103463A1
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Prior art keywords
wire bonding
bonding apparatus
coil
wire
capillary
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PCT/JP2013/077068
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English (en)
French (fr)
Japanese (ja)
Inventor
前田　徹
哲弥 歌野
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株式会社新川
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Publication of WO2014103463A1 publication Critical patent/WO2014103463A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/24—Preliminary treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the capillary or wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78264—Means for applying energy, e.g. heating means by induction heating, i.e. coils
    • H01L2224/78266—Means for applying energy, e.g. heating means by induction heating, i.e. coils in the upper part of the bonding apparatus, e.g. in the capillary or wedge
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78308—Removable capillary
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/7831—Auxiliary members on the pressing surface
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector

Definitions

  • the present invention relates to the structure of a wire bonding apparatus.
  • a thermal bonding method using ultrasonic waves is often used.
  • This method is a method in which a wire is pressure-bonded to a heated semiconductor chip and ultrasonic bonding is performed, and the bonding property of the bonding portion is improved by heating.
  • the heating heats not only the pad of the semiconductor chip to which the wire is bonded but also the entire semiconductor element including the circuit area of the semiconductor element, the semiconductor chip may be damaged or deteriorated.
  • materials such as ceramics and cermets are often used for capillaries for wire bonding, but these materials have high metal adhesion, and because of voids and pinholes existing on the surface, the tip Conductor and electrode dust is likely to adhere to the part. If such dust adheres to the tip of the capillary, the capillary hole may be blocked or a loop abnormality may occur, so it is necessary to frequently replace the capillary. When the capillary is replaced, it is necessary to adjust the wire bonding apparatus each time, so that there is a problem that the downtime of the wire bonding apparatus becomes long and the production efficiency is lowered.
  • JP-A-6-37154 JP 2007-335708 A Japanese Examined Patent Publication No. 4-47458 JP-A-1-189132
  • an object of the present invention is to effectively heat a wire bonding tool without deteriorating bonding quality.
  • a wire bonding apparatus includes a wire bonding tool, a coil disposed in a non-contact state around the wire bonding tool, a high frequency power source that supplies a predetermined high frequency power to the coil, and the wire bonding tool includes a base portion And a resistance layer that is provided on the outer surface of the base portion and generates heat by electromagnetic induction by a predetermined high-frequency power applied to the coil, and covers the outer surface of the resistance layer and the tip of the base portion and generates heat in the resistance layer. And a heat transfer layer that conducts to the bonding object.
  • the wire bonding apparatus of the present invention may include a matching device that matches the impedance of the high-frequency power source and the coil.
  • the resistance layer is made of at least one of titanium, chromium, nickel, tungsten, platinum or an alloy based on them.
  • the heat transfer layer is composed of one kind of diamond or nanocarbon material or a combination thereof.
  • the coil is arranged by stacking a plurality of pattern coils in the vertical direction, and the coil assembly that accommodates the pattern coil includes an upper plate, a lower plate, an upper plate, and a lower plate that cover the plurality of pattern coils.
  • a plurality of pattern coils and an insulator are included between the plates, and the insulator is sandwiched between the plurality of upper pattern coils and the lower pattern coil.
  • the upper and lower plates, the insulator, and the plurality of pattern coils each include through holes that allow the wire bonding tool to move in a non-contact state, and the plurality of upper pattern coils and the lower pattern coils Are characterized by being electrically connected to each other through the insulator.
  • the coil includes an annular metal wire with a part cut and each power supply line connected to each end of the metal wire, and the surface of the metal wire is covered with an insulating member.
  • Each power supply line may be covered with another rigid insulating member.
  • the wire bonding apparatus of the present invention includes a wire bonding tool, a coil disposed in a non-contact state around the wire bonding tool, and a high frequency power source that supplies a predetermined high frequency power to the coil.
  • the bonding tool is attached to the tip of the base part, a tool part that comes into contact with the object to be bonded, an outer surface of the base part, and electromagnetic induction by the predetermined high-frequency power applied to the coil.
  • a heat transfer layer that covers the outer surface of the resistance layer and conducts the heat generated in the resistance layer to the tool portion.
  • a bonding head 19 is installed on an XY table 20, and the bonding head 19 is driven by a Z-direction motor in the Z direction, the tip of which is the vertical direction.
  • a bonding arm 14 is provided.
  • An ultrasonic horn 13 is attached to the bonding arm 14, and a capillary 40 as a bonding tool is attached to the tip of the ultrasonic horn 13.
  • the XY table 20 and the bonding head 19 constitute a moving mechanism 18, and the moving mechanism 18 can move the bonding head 19 to any position within the horizontal plane (in the XY plane) by the XY table 20, and is attached to this.
  • the capillary 40 attached to the tip of the ultrasonic horn 13 can be freely moved in the XYZ directions.
  • a wire 12 is inserted through the capillary 40, and the wire 12 is wound around the spool 11.
  • a clamper 17 that moves up and down together with the bonding arm 14 and clamps the wire 12 is attached to the bonding head 19.
  • a position detection camera 25 for confirming the position of the semiconductor chip 2 is attached to the upper part of the bonding head 19.
  • An adsorption stage 23 for adsorbing and fixing the lead frame 22 to which the semiconductor chip 2 is attached is disposed below the capillary 40, and the wire bonding apparatus 10 moves the capillary 40 in the XYZ directions and inserts it into the capillary 40.
  • the electrode of the semiconductor chip 2 and the electrode of the lead frame 22 are joined by the wire 12 thus prepared.
  • the bonding head 19 on the lower side of the bonding arm 14 is provided with a coil assembly 30 through which the capillary 40 is inserted into a hole provided at the tip.
  • the coil assembly 30 is configured to be supplied with high frequency power from a high frequency power source 50.
  • the moving mechanism 18 and the high frequency power supply 50 are connected to a control unit 71 that controls the wire bonding apparatus 10 via a moving mechanism interface 72, a high frequency power supply interface 74, and a data bus 73, respectively.
  • the control unit 71 is a computer including a control CPU therein.
  • a storage unit 75 that stores control data is connected to the data bus.
  • the capillary 40 includes a base portion 41 made of ceramic, a metal layer 42 that is a resistance layer provided on the outer surface of the base portion 41, an outer surface of the metal layer 42, and a tip of the base portion 41. And a diamond layer 43 serving as a heat transfer layer.
  • the diamond constituting the diamond layer may be polycrystalline diamond, single crystal diamond, or diamond-like carbon.
  • the base portion 41 includes a root portion 44 attached to the ultrasonic horn 13, a cylindrical central portion that is thinner than the root portion 44, and a truncated cone-shaped tip that narrows toward the tip opposite to the root portion 44. Including parts. Inside each portion, there is provided a through hole that penetrates in the axial direction and through which the wire 12 is inserted.
  • the outer surface of the cylindrical central portion has a specific resistance of titanium, chromium, nickel, tungsten, platinum or an alloy thereof (at least one of titanium, chromium, nickel, tungsten, platinum or an alloy based on them).
  • a cylindrical metal layer 42 made of high metal is provided.
  • the metal layer 42 has a thickness of 20 to 30 ⁇ m, for example.
  • a diamond layer 43 coated with diamond is provided on the outer surface of the metal layer 42 and the tip of the base portion 41.
  • the diamond layer 43 is formed so as to cover the tip surface of the base portion 41, and a straight hole 45 through which the wire 12 is inserted and an inner chamfer portion 49 that extends toward the tip are formed at the tip, following the straight hole 45.
  • the outer surface has a shape substantially along the base portion 41, a flat face portion 47 is formed at the tip portion, and the face portion 47 and the outer peripheral surface are connected by a rounded outer radius portion 46. ing. That is, the diamond layer 43 forms a shape related to the bonding function of the capillary 40. Further, the thickness of the diamond layer 43 may be about 20 to 30 ⁇ m, for example.
  • a coil assembly 30 including pattern coils 34 and 35 is disposed below the ultrasonic horn 13 to which the capillary 40 is attached.
  • the coil assembly 30 has pattern coils 34 and 35 arranged on the upper and lower surfaces of an insulating layer 33 provided with a hole 38 through which the capillary 40 passes, respectively, and the hole 36 through which the capillary passes.
  • , 37 are sandwiched between a ceramic upper plate 31 and a lower plate 32.
  • the holes 36, 37, and 38 are coaxial and have the same size, and have a diameter slightly larger than the outer diameter of the capillary 40.
  • the capillary 40 passes through the holes 36, 37, and 38 in a non-contact manner.
  • the pattern coils 34 and 35 provided on the upper surface and the lower surface of the insulating layer 33 are provided with annular portions 34a and 35a that circulate substantially around the hole 38, and a supply extending from the annular portions 34a and 35a in the longitudinal direction of the insulating layer 33. Electric wires 34b and 35b.
  • the end portions 34c and 35c of the annular portions 34a and 35a are bent in the direction of the insulating layer 33 and penetrate the pattern coil through holes 38a of the insulating layer 33 and are electrically connected to each other. Therefore, when the high-frequency power source 50 shown in FIG. 1 is connected between the power supply line 34b of the upper pattern coil and the power supply line 35b of the lower pattern coil of the coil assembly 30 shown in FIG.
  • the pattern coil feed line 34b enters, flows from the feed line 34b through the annular portion 34a of the upper pattern coil disposed around the hole 38 of the insulating layer 33, and passes from the end 34c through the end 35c to the lower pattern coil. 35 around the hole 38 on the lower surface of the insulating layer 33 along the annular portion 35a, and returns to the high frequency power supply 50 from the power supply line 35b of the lower pattern coil. That is, the coil assembly 30 has a two-turn coil formed around the hole 38.
  • a free air ball 5 is formed at the tip of the wire 12 by electric discharge.
  • the surface of the spherical free air ball 5 is in contact with the surface of the inner chamfer portion 49 at the tip of the capillary 40.
  • the capillary 40 is positioned above the vertical movement, and the coil assembly 30 is positioned around the lower portion of the metal layer 42 of the capillary 40.
  • the controller 71 shown in FIG. 1 When the controller 71 shown in FIG. 1 outputs an energization command for the high frequency power supply 50, the signal is input to the high frequency power supply 50 shown in FIG. 1, and the high frequency power supply 50 outputs high frequency power.
  • the high frequency power is, for example, about several tens of watts at a frequency of 1 kHz to several 100 MHz.
  • the high frequency power output from the high frequency power supply 50 flows to the pattern coils 34 and 35 of the coil assembly 30. Then, as shown in FIG. 4, an induced current that flows in the circumferential direction along the cylindrical metal layer 42 of the capillary 40 penetrating the pattern coils 34 and 35 is generated. The lower part of the metal layer 42 close to 35 generates heat.
  • the temperature of the lower part of the metal layer 42 rises to about 600 ° C., for example.
  • the heat generated in the metal layer 42 flows toward the tip of the capillary 40 through the diamond layer 43 with low thermal resistance and good heat conductivity, and flows from the inner chamfer portion 49 formed by the diamond layer 43 to the free air ball 5. It flows in.
  • the free air ball 5 is kept at a high temperature by this heat input.
  • the capillary 40 can keep the temperature of the press-bonded ball 6 and the pad 3 at a temperature required for bonding, for example, about 300 ° C.
  • ultrasonic vibration generated by the ultrasonic horn 13 shown in FIG. 1 is applied to the press-bonded ball 6 via the inner chamfer portion 49 and the face portion 47 of the capillary 40. Then, the press-bonded ball 6 and the pad 3 are metallically bonded by pressing the press-bonded ball 6 against the pad 3, heating by heat from the metal layer 42, and ultrasonic vibration from the ultrasonic horn 13.
  • the wire bonding apparatus 10 of the present embodiment induction heats the metal layer 42 of the capillary 40 with the high frequency power supplied to the pattern coils 34 and 35 of the coil assembly 30.
  • the capillary 40 can be heated. Therefore, the free air ball 5 can be heated without affecting the high-speed vertical movement of the capillary 40 or the ultrasonic vibration of the capillary 40, and good bonding can be performed without heating the entire semiconductor chip 2. It can be carried out. Therefore, the wire bonding apparatus 10 of this embodiment can heat a wire bonding tool effectively, without deteriorating bonding quality.
  • the metal layer 42 of the capillary 40 is made of titanium, chromium, nickel, tungsten, platinum, or an alloy thereof (at least one of titanium, chromium, nickel, tungsten, platinum, or the basis thereof).
  • the alloy is a metal having a high specific resistance, and its thickness is described as 20 to 30 ⁇ m.
  • another metal material that is optimal for induction heating in relation to the frequency and output of the high-frequency power supplied to the coil assembly 30. May be used, and the thickness thereof may be changed as appropriate.
  • the heat transfer layer is described as the diamond layer 43.
  • the heat transfer layer is not limited to diamond as long as it can transfer heat generated in the metal layer 42 to the tip of the capillary 40, for example, a nanocarbon material.
  • it may be composed of a material combining diamond and nanocarbon material, or diamond-like carbon (diamond, one type of nanocarbon material or a combination thereof), and the thickness of the capillaries 40 is also the heat of the metal layer 42.
  • the thickness is not limited to about 20 to 30 ⁇ m, and may be thicker or thinner as long as it can transmit well to the tip.
  • the coil assembly 30 has been described as not moving in the vertical direction. However, the coil assembly 30 may be configured to move in the vertical direction together with the capillary 40. In this case, the length of the metal layer 42 in the axial direction of the capillary 40 may be only a portion that penetrates the coil assembly 30. Moreover, you may make it comprise the front-end
  • the present embodiment shows another aspect of the coil assembly. Other parts are the same as those in the embodiment described with reference to FIGS.
  • the coil assembly 60 of the present embodiment is provided on the outer surface of the annular copper wire 62, the annular copper wire 62 that is partially cut around the capillary 40, the feeder wire 63 connected to the end of the annular copper wire 62, and the annular copper wire 62.
  • the ceramic coating 64 which is an insulating member and an arm 61 including a power supply line 63 inside.
  • the arm 61 is an insulating member having rigidity, such as a resin molding, and may be molded integrally with a part of the ceramic coating 64.
  • the annular copper wire 62 may be connected, and then the ceramic coating 64 may be performed on the outer surface of the annular copper wire 62.
  • the inner diameter dimension of the ceramic coating 64 is slightly larger than the outer diameter dimension of the capillary 40.
  • the annular copper wire 62 constitutes a one-turn coil.
  • the coil assembly 60 of the present embodiment has a simpler structure and can be lighter than the coil assembly 30 described above, and therefore, for example, the coil assembly 60 can be easily moved up and down together with the capillary 40.
  • FIG. 7A is a perspective view showing the entire wedge tool 80
  • FIG. 7B is a cross-sectional view of the vicinity of the tip of the wedge tool 80.
  • the wedge tool 80 is made of ceramic and has a wedge-shaped base portion 41, and the outer shape thereof is the holes 36 to 38 of the coil assemblies 30 and 60 described with reference to FIG.
  • the inner diameter of the ceramic coating 64 of the coil assembly 60 described with reference to FIG. 6 is slightly smaller, and the holes 36 to 38 or the inner side of the ceramic coating 64 can be moved up and down in a non-contact state.
  • the base portion 44 of the base portion 41 has a quadrangular shape, and the tip end side of the base portion 41 has a wedge shape.
  • the surface of the base portion 41 on the front end side of the wedge tool 80 is coated with a wedge-shaped (square ring) metal layer 42.
  • the thickness of the metal layer 42 may be about 20 ⁇ m to 30 ⁇ m as in the embodiment described above.
  • the metal layer 42 partially penetrates the pattern coils 34 and 35 of the coil assembly 30 even when the wedge tool 80 moves in the vertical direction. In such a position, when a high frequency current flows through the pattern coils 34 and 35, an induced current flows in the circumferential direction, and heat is generated by the induced current.
  • the metal layer 42 has been described as a quadrangular ring, it may be circular.
  • a tapered guide hole 83 through which the wire 12 is inserted and a wire feed hole 82 are obliquely opened on one surface of the tip of the wedge tool 80, and the tip of the wire feed hole 82 is formed at the end of the wire feed hole 82.
  • the bonding foot 81 is a part for bonding and heating the wire 12.
  • a diamond layer 43 is formed on the metal layer 42 on the side of the wedge tool 80 where the bonding foot 81 is formed, and a high frequency supplied to the coil assembly 30 shown in FIG. 2 or the coil assembly 60 shown in FIG.
  • the wire feed hole 82 and the taper guide hole 83 side remain the ceramic base portion 41.
  • the thickness of the diamond layer 43 is 20 to 30 ⁇ m.
  • the wire feed hole 82 and the tapered guide hole 83 may also be coated with the diamond layer 43 as in the above-described embodiment, or the tip portion may be a diamond block.
  • the wire bonding apparatus 10 to which the wedge tool 80 configured as described above is attached can cope with a fine pitch in addition to the effects of the embodiment described above with reference to FIGS. 1 to 5. There is an effect.
  • a capillary 150 which is a wire bonding tool of the embodiment shown in FIG. 8 includes a base portion 151 made of ceramics, a free air ball 5 shown in FIG. 4 attached to the tip of the base portion 151 and a bonding target, 5, a tool portion 160 that contacts the press-bonded ball 6, a metal layer 152 that is a resistance layer provided on the outer surface of the base portion 151, and a diamond layer 153 that is a heat transfer layer covering the outer surface of the metal layer 152. I have.
  • the tool portion 160 has a truncated conical shape with a tapered hole made of diamond.
  • a straight hole 165 through which the wire 12 is inserted and an inner chamfer portion 169 that extends from the straight hole 165 toward the tip are formed in the center.
  • the inner chamfer portion is a portion that contacts the free air ball 5 and presses the free air ball 5 against the pad 3 to form the press-bonded ball 6.
  • a flat face portion 47 that presses the outer peripheral portion of the press-bonded ball 6 against the pad 3 is formed at the tip.
  • the face portion 47 and the outer peripheral surface are connected by a rounded outer radius portion 46.
  • the tool part 160 is being fixed to the front end side of the base
  • the base portion 151 of the capillary 150 is slightly thinner than the root portion 154. Further, the outer diameter of the tool part 160 is slightly larger than the outer diameter of the tip of the base part 151. For this reason, as shown in FIG. 8, a thin cylindrical or cone-shaped recess is formed on the outer peripheral surface between the root portion 154 and the tool portion 160, and titanium, chromium, nickel, tungsten or And a cylindrical metal layer 152 formed of a metal having a high specific resistance, such as platinum and alloys thereof (at least one of titanium, chromium, nickel, tungsten, platinum, or an alloy based thereon). . A diamond layer 153 is coated on the outer surface of the metal layer 152 so as to fill the depression described above. For this reason, as shown in FIG. 8, the tip surface of the diamond layer 153 is in close contact with the end surface of the tool portion 160 where the bonding line 161 is present.
  • the wire bonding apparatus 10 of the present embodiment forms the metal layer 152 of the capillary 150 with the high-frequency power that has been passed through the pattern coils 34 and 35 of the coil assembly 30 as in the embodiment described above with reference to FIGS. Since induction heating is performed, the capillary 150 can be heated in a non-contact state with the capillary 150. Therefore, the free air ball 5 can be heated without affecting the high-speed vertical movement of the capillary 150 or the ultrasonic vibration of the capillary 150, and good bonding can be performed without heating the entire semiconductor chip 2. It can be carried out. Therefore, the wire bonding apparatus 10 of the present embodiment can effectively heat the wire bonding tool without deteriorating the bonding quality.
  • the tool portion 160 is formed separately from diamond and is fixed to the tip of the base portion 151 with silver brazing. Therefore, the straight hole 165, the inner chamfer portion 169, the face portion 167, and the outer radius portion 166 are formed.
  • the shape and size can be accurately manufactured, and the wire bonding tool can be effectively heated with a simple configuration, whereby the bonding object can be locally heated.
  • the present embodiment is configured so that the outer surface of the base part 151 and the tool part 160 are smoothly connected without providing a hollow in which the center of the base part 151 of the capillary 150 is narrowed.
  • the diamond layer 153 is coated so as to cover the upper end and side surfaces of the metal layer 152 and the upper side surface of the tool portion 160 and not on the outer radius portion 166.
  • the heat generated in the metal layer 152 reaches the upper side surface of the tool portion 160 through the diamond layer 153 and enters the inner side from the upper side surface of the tool portion 160 as shown by the arrow in FIG.
  • the chamfer part 169 and the face part 167 are reached.
  • the tool portion 160 is slightly longer than the embodiment shown in FIG. 8 so that heat can sufficiently flow from the side surface.
  • This embodiment has the same effects as the embodiment described above with reference to FIG.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
PCT/JP2013/077068 2012-12-27 2013-10-04 ワイヤボンディング装置 WO2014103463A1 (ja)

Applications Claiming Priority (2)

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JP2012-284948 2012-12-27
JP2012284948A JP5934087B2 (ja) 2012-12-27 2012-12-27 ワイヤボンディング装置

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
US20220134468A1 (en) * 2019-03-18 2022-05-05 Shinkawa Ltd. Capillary guide device and wire bonding apparatus
US20220338838A1 (en) * 2021-04-27 2022-10-27 Kulicke And Soffa Industries, Inc. Ultrasonic transducers, wire bonding machines including ultrasonic transducers, and related methods

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Publication number Priority date Publication date Assignee Title
TWI620261B (zh) * 2017-06-20 2018-04-01 China Grinding Wheel Corp Line tool
JP7168780B2 (ja) * 2018-12-12 2022-11-09 ヘレウス マテリアルズ シンガポール ピーティーイー． リミテッド 電子部品の接触面を電気的に接続するプロセス

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JPS4831691B1 (zh) * 1969-12-18 1973-10-01
JPH0637155A (ja) * 1992-07-16 1994-02-10 Matsushita Electric Ind Co Ltd 電極接合装置
JPH06268007A (ja) * 1993-03-17 1994-09-22 Nec Yamagata Ltd 半導体製造装置
JP2007335708A (ja) * 2006-06-16 2007-12-27 Shinkawa Ltd ワイヤボンダ、ワイヤボンディング方法及びプログラム

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Publication number Priority date Publication date Assignee Title
JPS4831691B1 (zh) * 1969-12-18 1973-10-01
JPH0637155A (ja) * 1992-07-16 1994-02-10 Matsushita Electric Ind Co Ltd 電極接合装置
JPH06268007A (ja) * 1993-03-17 1994-09-22 Nec Yamagata Ltd 半導体製造装置
JP2007335708A (ja) * 2006-06-16 2007-12-27 Shinkawa Ltd ワイヤボンダ、ワイヤボンディング方法及びプログラム

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220134468A1 (en) * 2019-03-18 2022-05-05 Shinkawa Ltd. Capillary guide device and wire bonding apparatus
US11717912B2 (en) * 2019-03-18 2023-08-08 Shinkawa Ltd. Capillary guide device and wire bonding apparatus
US20220338838A1 (en) * 2021-04-27 2022-10-27 Kulicke And Soffa Industries, Inc. Ultrasonic transducers, wire bonding machines including ultrasonic transducers, and related methods
US11937979B2 (en) * 2021-04-27 2024-03-26 Kulicke And Soffa Industries, Inc. Ultrasonic transducers, wire bonding machines including ultrasonic transducers, and related methods

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JP5934087B2 (ja) 2016-06-15
TW201430976A (zh) 2014-08-01
TWI528478B (zh) 2016-04-01

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