WO2014032361A1 - 在体硅上制备独立双栅FinFET的方法 - Google Patents

在体硅上制备独立双栅FinFET的方法 Download PDF

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WO2014032361A1
WO2014032361A1 PCT/CN2012/082797 CN2012082797W WO2014032361A1 WO 2014032361 A1 WO2014032361 A1 WO 2014032361A1 CN 2012082797 W CN2012082797 W CN 2012082797W WO 2014032361 A1 WO2014032361 A1 WO 2014032361A1
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silicon
gate
drain
source
oxide
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黄如
樊捷闻
许晓燕
李佳
王润声
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Peking University
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Definitions

  • the present invention relates to a method of preparing a field effect transistor by wet etching, and belongs to the field of ultra-large scale integrated circuit manufacturing technology.
  • BACKGROUND OF THE INVENTION Today's semiconductor manufacturing industry is rapidly evolving under the guidance of Moore's Law, continuously improving the performance and integration density of integrated circuits while minimizing the power consumption of integrated circuits. Therefore, the preparation of high-performance, low-power ultra-short trench devices will become the focus of future semiconductor manufacturing.
  • DIBL drain-induced barrier reduction
  • Hasimoto et al. proposed the concept of "folded-channel MOSFETs" at the 1998 IEDM conference.
  • Heang et al. announced a FinFET with a channel length below 50 nm at the IEDM conference. This is the first time FinFET has been successfully integrated on a substrate using a conventional silicon process.
  • the structure of a FinFET and the process of fabricating a FinFET are disclosed in US Pat. No. 6413802 to Hu et al.
  • the FinFET is the easiest to form on an SOI substrate.
  • the process is relatively simple. It only needs to lithographically etch the Fin strip shape on the top silicon layer of the SOI substrate, and then pass through a series of gate processes, source and drain processes, and the dielectric layer at the back end.
  • a FinFET can be formed by interconnecting with a metal.
  • a method for preparing an independent double-gate FinFET on bulk silicon comprising the following steps:
  • the main purpose of this step is to form a thin strip-like pattern of source and drain and connection source and drain on the hard mask by electron beam lithography.
  • the thin strip structure formed by electron beam lithography can be about 20-40 nm wide.
  • the main purpose of this step is to form an oxide layer under the Fin strip and on the surface of the substrate on both sides of the Fin strip, so that the oxide isolation layer can suppress the opening of the substrate planar transistor and prevent current from passing from the source end to the drain end through the substrate. effect. This reduces the leakage current and reduces the power consumption of the device.
  • the main purpose of this step is to form a gate structure, in which the gate structure needs to be defined by electron beam lithography, mainly because electron beam lithography can easily control the gate line width to about 22 nm, which is the channel length we need. Degree. Moreover, the CMP chemical mechanical polishing separates the gates on both sides of the Fin strip and is independent of each other, thereby obtaining a FinFET of independent double gate structure.
  • the main purpose of this step is to lead the source and drain terminals and the gate terminal to facilitate testing and formation of large-scale circuit structures.
  • the fabrication of devices on a bulk silicon substrate greatly saves the cost of the silicon wafer.
  • the use of a simple new process overcomes the difficulty of preparing a FinFET on a bulk silicon substrate, and the process control requirements are high, and the whole process
  • the process is fully compatible with conventional silicon-based VLSI fabrication techniques; finally, this method produces a separate dual-gate FinFET field-effect transistor that is excellent in suppressing short-channel effects and has multiple threshold characteristics specific to independent dual-gate devices. Further reduce the power consumption of the device.
  • FIG. 1-12 are schematic diagrams showing the process flow of a method for preparing an independent double-gate FinFET on bulk silicon according to the present invention.
  • a brief description of the process flow is as follows:
  • Figure 1 is a schematic view of the structure after depositing a silicon oxide silicon nitride film as a hard mask;
  • Figure 2 is a graph of electron beam lithography Fin strips, and etching by anisotropic dry etching
  • FIG. 3 is a schematic structural view after depositing silicon nitride to etch silicon nitride to form a silicon nitride sidewall;
  • FIG. 4 is an isotropic dry etching silicon substrate, The silicon material under the Fin strip is exposed to perform the next oxidation process;
  • FIG. 5 is a schematic structural view after the oxidation isolation layer is formed on the bottom of the Fin strip by an oxidation process
  • FIG. 6 is a schematic cross-sectional view of the structure of FIG. Figure 7 shows the junction after removing the silicon nitride layer
  • Figure 8 is a schematic cross-sectional view of the structure of Figure 7 in the AA direction
  • Figure 9 is a schematic view of the structure after gate oxide deposition, gate material deposition and subsequent CMP process
  • Figure 10 is an electron beam lithography
  • FIG. 11 is a schematic cross-sectional view of the structure of FIG. 10 in the AA direction
  • FIG. 12 is a cross-sectional view of the structure of FIG. 10 and the source-drain implantation and annealing process.
  • Final device structure diagram is a schematic structural view after the oxidation isolation layer is formed on the bottom of the Fin strip by an oxidation process
  • FIG. 6 is a schematic cross-sectional view of the structure of FIG. Figure 7 shows the junction after removing the silicon
  • n-type independent double-gate FinFET with a Fin strip width of approximately 20 nm and a channel length of approximately 32 nm was prepared according to the following procedure:
  • Anisotropic dry etching 1000A silicon substrate as shown in Figure 2, transfer the pattern structure on the hard mask to the silicon material;
  • the anisotropic dry etching etches the 1000A silicon substrate to expose the silicon material under the Fin strip, as shown in Figure 4;
  • an oxide separation layer is formed on the surface of the substrate under the Fin strip and on both sides of the Fin strip, as shown in FIG. 5;
  • CMP chemical mechanical polishing planarizes the polysilicon and stops on the silicon oxide hard mask layer, as shown in Figure 9;
  • Electron beam lithography defines a fine line of the grid, the width of the grid is 32 nanometers;
  • Each of the anisotropic dry etching etches 3000A polysilicon to form a fine grid line.
  • the gate lines on both sides of the Fin strip are not connected together and are independent of each other;
  • Source and sink ion implantation Note As, the implantation energy is 50keV, and the implantation dose is 4el5cm-2;

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

提供一种在体硅上制备独立双栅FinFET的方法，包括：形成源漏和连接源漏的细条状的图形结构；形成氧化隔离层；形成栅结构和源漏结构；形成金属接触和金属互连。通过采用此方法可以在体硅上形成独立双栅FinFET，而且整个工艺流程完全与常规硅基超大规模集成电路制造技术兼容，具有简单、方便、周期短的特点，节省了硅片成本。且采用该方法制备形成的独立双栅FinFET场效应晶体管，能够很好的抑制短沟道效应，并通过独立双栅器件特有的多阈值特点进一步降低器件的功耗。

Description

在体硅上制备独立双栅 FinFET的方法 技术领域 本发明涉及一种湿法腐蚀制备场效应晶体管的方法，属于超大规模集成电路制造 技术领域。 背景技术 当今半导体制造业在摩尔定律的指导下迅速发展，不断地提高集成电路的性能和 集成密度， 同时尽可能的减小集成电路的功耗。 因此， 制备高性能， 低功耗的超短沟 器件将成为未来半导体制造业的焦点。 当进入到 22纳米技术节点以后， 传统平面场 效应晶体管的泄漏电流不断增加，以及日益严重的短沟道效应，漏致势垒降低（DIBL) 效应， 不能很好的适应半导体制造的发展。 为了克服上述一系列问题， 一大批新结构 半导体器件开始崭露头角， 如 Double Gate FET， FinFET， Tri-Gate FET， Gate-all-around(GAA) Nanowire(NW) FET等， 逐渐引起广泛的关注。 通过多栅结构， 能够很好的加强栅对于沟道的控制能力，使得电场线难以从漏端直接穿过沟道到达源 端， 这样就能大幅度的改善漏致势垒降低效应， 减小泄漏电流， 并且很好的抑制短沟 道效应。正是由于栅结构导致良好的栅控能力，沟道区域不需要像传统平面场效应晶 体管一样进行重掺杂来抑制短沟道效应，轻掺杂沟道区域的优势在于减小了散射带来 的迁移率的下降， 从而使多栅结构器件的迁移率得到大幅度改善。 因此， FinFET 作 为一种新结构器件， 将是一个很有潜力的能够替代传统平面场效应晶体管的选择。
Hasimoto等人在 1998年的 IEDM会议上提出了 "folded-channel MOSFETs" 的 概念。 1999年， Heang等人在 IEDM会议上公布 50nm以下沟道长度的 FinFET。 这 是 FinFET第一次采用传统硅工艺， 被成功的集成在衬底上。
Hu等人的 U.S. Pat. No. 6413802中揭开了 FinFET的结构， 以及制备 FinFET的 工艺。 在 SOI衬底上最容易形成 FinFET, 工艺相对简单， 只需要在 SOI衬底的顶硅 层上光刻刻蚀出 Fin条形状， 然后再经过一系列栅工艺， 源漏工艺以及后端的介质层 和金属互联就可以形成 FinFET。 但是它的缺点是： （1 ) 工艺成本太高， SOI衬底相 当昂贵； （2) 需要进行源漏抬升技术， 否则源漏的扩展电阻过大导致开态电流过小， 器件性能较差； （3 )没有体引出， 这样就无法通过衬底偏置效应调节阈值电压。 在体 硅衬底上形成 FinFET, 避免了源漏扩展电阻过大的问题， 同时也使得体端能够加载 电压，获得衬底偏置效应，从而可以更加容易的把阈值电压调整到一个更加合适的值。 但是它的缺点是： （1 ) 工艺相对复杂， 对工艺的控制要求更高， 因为需要对 FinFET 增加一层氧化隔离层， 抑制底部平面晶体管的开启， 减小泄漏电流； （2)尽管增加了 氧化隔离层， 但是由于存在除 Fin条以外的另外一条从源到漏的电流路径， 栅控能力 并没有 SOI陈地上制备的器件来的出色，导致在超短沟器件中泄漏电流导致的功耗仍 然较大。 发明内容
本发明的目的在于提供与常规硅基超大规模集成电路制造技术兼容的在体硅上 制备独立双栅 FinFET方法。
本发明通过如下技术方案予以实现： 一种在体硅上制备独立双栅 FinFET方法， 包括如下步骤：
a) 形成源漏和连接源漏的细条状的图形结构
该步骤主要目的是利用电子束光刻在硬掩膜上形成源漏和连接源漏的细条状图 形结构， 利用电子束光刻可以使形成的细条状结构宽度 20-40纳米左右。
i. 在硅衬底上淀积氧化硅、 氮化硅作为硬掩膜；
ii. 通过一次电子束光刻， 刻蚀氮化硅、 氧化硅工艺， 在硬掩膜上形成源漏和连 接源漏的细条状的图形结构；
iii. 去掉电子束光刻胶；
iv. 刻蚀硅工艺， 将硬掩膜上的图形结构转移到硅材料上；
b) 形成氧化隔离层
该步骤主要目的是在 Fin条下面和 Fin条两侧衬底表面形成氧化层， 使得这层氧 化隔离层能够起到抑制了衬底平面晶体管的开启，防止电流从源端通过衬底到达漏端 的作用。 从而降低泄露电流， 降低器件的功耗。
i. 淀积一层新的氮化硅；
ii. 利用各项异性干法刻蚀刻蚀新的氮化硅， 在 Fin条两侧形成氮化硅侧墙； iii. 利用各项异性干法刻蚀刻蚀 Fin条两侧裸露出来的硅衬底；
iv. 通过湿法氧化在 Fin条下面和 Fin条两侧衬底表面形成氧化层；
c) 制备栅结构和源漏结构
该步骤主要目的是形成栅结构， 其中栅结构需要用电子束光刻来定义， 这主要是 因为电子束光刻能容易的将栅线条宽度控制在 22纳米左右， 这是我们需要的沟道长 度。 而且 CMP化学机械抛光使得 Fin条两侧的栅结果分离， 相互独立， 从而得到独 立双栅结构的 FinFET。
i. 湿法腐蚀去掉氮化硅侧墙和氮化硅硬掩膜；
ii. 热氧化生长一层很薄的栅氧化层；
iii. 淀积一层多晶硅作为栅材料；
iv. CMP化学机械抛光， 使多晶硅平坦化， 并且停止在 Fin条顶部氧化硅硬掩膜 表面；
v. 通过电子束光刻， 刻蚀多晶硅栅材料， 形成多晶硅栅线条， Fin条两侧的栅线 条不连接在一起， 相互独立；
vi. 通过离子增强化学气相淀积以及回刻， 形成氧化硅侧墙；
vii.进行离子注入和高温退火， 形成源漏结构；
d) 形成金属接触和金属互联
该步骤主要目的是引出源漏端和栅端， 方便测试和形成大规模电路结构。
本发明具有如下技术效果：
首先， 在体硅衬底上制备器件大大节省了硅片的成本； 其次， 利用一种简单的新 工艺克服了在体硅衬底上制备 FinFET工艺复杂， 工艺控制要求高的困难， 而整个工 艺流程完全与常规硅基超大规模集成电路制造技术兼容； 最后，此方法制备形成的独 立双栅 FinFET场效应晶体管， 能够很好的抑制短沟道效应， 并通过独立双栅器件特 有的多阈值特点进一步降低器件的功耗。这主要有两个原因： 一是因为 Fin条下面和 Fin条两侧衬底表面形成氧化层起到隔离作用， 抑制了衬底寄生平面晶体管的开启， 防止电流从源端通过衬底到达漏端；二是因为独立双栅结构可以很容易的进行阈值调 节， 多阈值器件能够在保持高性能的同时进一步降低功耗。 附图说明
图 1-12是本发明提出的在体硅上制备独立双栅 FinFET方法的工艺流程示意图。 工艺流程的简要说明如下：图 1为淀积氧化硅氮化硅薄膜作为硬掩膜以后的结构示意 图； 图 2为进行电子束光刻 Fin条图形， 并通过各项异性干法刻蚀将图形转移到硅衬 底上之后的结构示意图； 图 3为淀积氮化硅刻蚀氮化硅， 形成氮化硅侧墙之后的结构 示意图； 图 4为各项异性干法刻蚀硅衬底， 使 Fin条底下的硅材料裸露出来， 以便进 行接下来的氧化工艺； 图 5为通过氧化工艺在 Fin条底部形成氧化隔离层之后的结构 示意图； 图 6为图 5结构中 AA方向上的截面示意图； 图 7为去掉氮化硅层以后的结 构示意图； 图 8为图 7结构中 AA方向上的截面示意图； 图 9为经过栅氧化层淀积， 栅材料淀积以及后续的 CMP工艺之后的结构示意图；图 10为进行电子束光刻栅线条 图形， 并通过各项异性干法刻蚀将图形转移之后的结构示意图； 图 11为图 10结构中 AA方向上的截面示意图； 图 12为进行侧墙工艺以及源漏注入、 退火工艺之后的最 终器件结构示意图；
图中： 1一硅； 2—氧化硅； 3—氮化硅； 4一多晶硅。 具体实施方式 下面结合附图和具体实施例对本发明进行详细说明，具体给出一实现本发明提出 的在体硅上制备独立双栅 FinFET的工艺方案， 但不以任何方式限制本发明的范围。
根据下列步骤制备 Fin条宽度约为 20纳米， 沟道长度约为 32纳米的 n型独立双 栅 FinFET:
1. 在硅衬底上低压化学气相沉积氧化硅 300 A;
2. 在氧化硅上低压化学气相沉积氮化硅 1000 A， 如图 1所示， 淀积的氧化硅和 氮化硅作为硬掩膜；
3. 光学光刻、 定义 Fin条， 在硬掩膜上形成源漏和连接源漏的细条状的图形结 构；
4. 各项异性干法刻蚀 1000A氮化硅；
5. 各向异性干法刻蚀 300A氧化硅；
6. 各向异性干法刻蚀 1000A硅衬底， 如图 2所示， 将硬掩膜上的图形结构转移 到硅材料上；
7. 在硅衬底上低压化学气相沉积氮化硅 500A;
8. 各向异性干法刻蚀 500A氮化硅， 形成侧墙， 如图 3所示；
9. 各项异性干法刻蚀 1000A硅衬底， 使 Fin条底下的硅材料裸露出来， 如图 4 所示；
10.湿氧氧化 30θΑ， 在在 Fin条下面和 Fin条两侧衬底表面形成氧化隔离层， 如 图 5所示；
11.各向同性湿法腐蚀 1000 A氮化硅， 如图 7所示；
12.热氧化生长 15A氧化硅， 作为栅氧化层；
13.低压化学气相沉积多晶硅 3000A, 作为栅材料；
14. CMP化学机械研磨将多晶硅平坦化，停止在氧化硅硬掩膜层上，如图 9所示； 15.电子束光刻定义栅细线条， 栅条的宽度为 32纳米；
16.各项异性干法刻蚀 3000A多晶硅， 形成栅细线条， 如图 10所示， Fin条两侧 的栅线条不连接在一起， 相互独立；
17.低压化学气相沉积氧化硅 200A， 作为侧墙材料；
18.各向异性干法刻蚀 200A氧化层， 形成侧墙；
19.源漏离子注入， 注 As， 注入能量为 50keV， 注入剂量为 4el5cm-2;
20. RTP退火， 1050度， 5秒， 在氮气氛围下， 如图 12所示， 形成源漏结构；
21.形成金属接触和金属互联， 引出源漏端和栅端， 形成大规模电路结构。 最后需要注意的是， 公布实施方式的目的在于帮助进一步理解本发明， 但是本领 域的技术人员可以理解： 在不脱离本发明及所附的权利要求的精神和范围内，各种替 换和修改都是可能的。 因此， 本发明不应局限于实施例所公开的内容， 本发明要求保 护的范围以权利要求书界定的范围为准。

Claims

权 利 要 求
1、 一种在体硅上制备独立双栅 FinFET的方法， 包括如下步骤： a) 形成源漏和连接源漏的细条状的图形结构 i. 在硅衬底上淀积氧化硅、 氮化硅作为硬掩膜；
ii. 通过一次电子束光刻， 刻蚀氮化硅、 氧化硅工艺， 在硬掩膜上形成 源漏和连接源漏的细条状的图形结构；
iii.去掉电子束光刻胶；
iv.刻蚀硅工艺， 将硬掩膜上的图形结构转移到硅材料上；
b) 形成氧化隔离层 i. 淀积一层新的氮化硅； ii. 利用各项异性干法刻蚀刻蚀新的氮化硅，在 Fin条两侧形成氮化硅侧 摔 iii.利用各项异性干法刻蚀刻蚀 Fin条两侧裸露出来的硅衬底； iv.通过湿法氧化在 Fin条下面和 Fin条两侧衬底表面形成氧化层； c) 形成栅结构和源漏结构 i. 湿法腐蚀去掉氮化硅侧墙和氮化硅硬掩膜；
ii. 热氧化生长一层栅氧化层； iii.淀积一层多晶硅作为栅材料；
iv. CMP化学机械抛光， 使多晶硅平坦化， 并且停止在 Fin条顶部氧化 硅硬掩膜表面；
v. 通过电子束光刻， 刻蚀多晶硅栅材料， 形成多晶硅栅线条， Fin条两 侧的栅线条不连接在一起， 相互独立；
vi.通过离子增强化学气相淀积以及回刻， 形成氧化硅侧墙； vii.进行离子注入和高温退火， 形成源漏结构。
2. 如权利要求 1所述的在体硅上制备独立双栅 FinFET的方法，其特征 在于： 所属步骤 c)中， 热氧化栅介质和多晶硅栅材料是 High-k栅介质和金 属栅材料。
3. 如权利要求 1所述的在体硅上制备独立双栅 FinFET的方法，其特征 在于： 所属步骤 c)中， 进一步将 Fin条两侧的栅连接起来形成同一个栅。
4. 如权利要求 1所述的在体硅上制备独立双栅 FinFET的方法，其特征 在于： 所述步骤 a)、 c)中， 采用电子束光刻形成源漏和连接源漏的细条状图 形结构。
5. 如权利要求 1所述的在体硅上制备独立双栅 FinFET的方法，其特征 在于： 所述步骤 b)中， 生长氧化隔离层采用湿氧氧化热生长氧化硅的方法。
6. 如权利要求 1所述的在体硅上制备独立双栅 FinFET的方法，其特征 在于： 所述步骤 b)中， 生长的氧化隔离层完全隔离或者部分隔离 Fin条与衬 底的连接。
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